TW201823527A - method of manufacturing single-crystalline silicon - Google Patents

Abstract

To correctly measure liquid surface position of melted liquid in a method of manufacturing single-crystalline silicon according to Czochralski process. In a single-crystal pulling step, which pulls a single-crystal 15 from melted liquid in a crucible 11, edge patterns of a real image of furnace structure 17 displayed in a picture and a mirror image of the furnace structure 17 reflected on the liquid surface of the melted liquid are detected, wherein the picture is taken for the furnace structure 17 and the surface 13a of the melted liquid 13 inside the chamber 19 from a slanting upper part by a camera 18 equipped outside a chamber 19, the edge patterns of the real image and the mirror image of the furnace structure 17 are projected onto a standard plane according to a presumed installation angle [theta]c and a focal length f of the camera, representative dimensions of the real image and the mirror image of the furnace structure 17 are calculated from the standard pattern, which has the highest matching rate when a pattern matching is performed for the real image and the mirror image of the furnace structure 17 on the standard plane.

Description

 Single crystal manufacturing method  

The present invention relates to a method for producing a single crystal according to the Czochralski (hereinafter referred to as CZ method), and more particularly to a method for accurately measuring and controlling the liquid level position of a melt.

The single crystal of the substrate material of the semiconductor element is mostly produced by the CZ method. In the CZ method, the seed crystal is immersed in the crucible melt contained in the quartz crucible, and the seed crystal is gradually increased while rotating the seed crystal and the quartz crucible, thereby growing a single crystal having a large diameter at the lower end of the seed crystal. . By the CZ method, a large-diameter monocrystalline ingot having a diameter of 300 mm or more can be produced with high yield.

In order to control the crystal quality of the single crystal with high precision, it is necessary to control the liquid level of the molten metal with high precision, in particular, a cylindrical in-furnace structure called a heat insulating member disposed above the molten liquid. The distance from the lower end to the melt surface (gap). In order to control the liquid level of the mash liquid with high precision, for example, Patent Document 1 describes a method of accurately measuring the relative distance between the lower end of the thermal barrier tube disposed around the single crystal and the melt surface. In this method, the growth point of the single crystal which is the contact point of the single crystal and the melted surface and the lower end of the thermal barrier are taken from the outside of the furnace by the CCD camera, and the maximum growth point of the single crystal is detected from the image obtained therefrom. The position b and the position a of the inner diameter of the thermal barrier tube are the largest, and the difference between the position b at which the diameter of the single crystal has the largest growth point and the position a where the inner diameter of the thermal barrier tube is the largest is calculated. The difference between the obtained positions is taken as the difference x between the positions in the vertical direction on the image, and the difference between the position x in the vertical direction and the installation angle in the vertical direction of the CCD camera is used to calculate the melt surface and the lower end portion of the thermal barrier tube. The relative distance y.

Further, Patent Document 2 describes a method and system for obtaining a melting level and a position of a reflector in a Czochralski single crystal growth apparatus. The single crystal growth apparatus has a crucible that accommodates the crucible melt and heats it, and the crucible draws a single crystal. Similarly, the single crystal growth apparatus has a central opening, and has a reflector disposed in the crucible, and the single crystal is drawn through the central opening. The camera forms a part of the virtual image of a portion of the reflector and the reflector reflected by the liquid surface of the melt. The image processor processes the image as a function of the pixel value and detects the edge of the real image of the reflector and the edge of the virtual image. The control circuit determines the distance from the camera to the real image of the reflector and the distance from the camera to the virtual image of the reflector based on the relative position of the detected edge in the image. The control circuit obtains at least one parameter indicating the state of the single crystal growth device based on the obtained distance, and controls the single crystal growth device in accordance with the obtained parameters.

Patent Document 3 describes a method of accurately detecting the liquid surface position of the mash liquid and producing a single crystal having high quality crystal characteristics. In the manufacturing method, in the initial stage of the pulling, the first calculating unit sets the liquid level of the molten liquid based on the interval between the real image of the heat insulating member and the mirror image, and in the stage in which the single crystal migrates to the body portion, The second calculation unit sets the liquid level position of the molten liquid based on the image of the high luminance band (melting ring).

Further, Patent Document 4 describes a method for producing a single crystal in which the interval between the heat insulating member and the melt surface is controlled with higher precision. In this method, the differential information of the real image and the mirror image of the thermal insulation member photographed by the photographing device is used, and the contour of the real image and the mirror image is specified, and the melt liquid of the single crystal pulling is calculated from the specific contour line. The gap between the liquid level and the heat insulating member (gap). Further, in this method, the opening image of the heat insulating member having an elliptical appearance is circularly approximated, and the center position of the heat insulating member is calculated.

Patent Document 5 describes a method of adjusting the position of the camera and a camera position adjustment jig that can ensure the diameter detection accuracy at the stage before the start of the single crystal pulling. In this method, the display screen showing a circle having a known diameter is configured such that the display surface of the circle and the melt surface are at the same height position, and the camera is installed to detect the mounting position and the mounting angle of the circle by the diameter value of the circle detected by the camera. In order to make the detected diameter value coincide with the known diameter value, the camera is adjusted to an appropriate mounting position and mounting angle.

Advanced technical literature

Patent literature:

[Patent Document 1] Japanese Patent No. 4930487

[Patent Document 2] Japanese Patent Publication No. 2002-527341

[Patent Document 3] Japanese Patent No. 5678635

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2013-216505

[Patent Document 5] Japanese Patent Laid-Open Publication No. 2015-129062

In the cultivation of the singly crystals according to the CZ method, the type or distribution of the defects contained in the single crystal is related to the ratio V/G of the drawing speed V of the single crystal and the temperature slope G in the growth direction of the uni crystal. In order to produce high-quality quinone crystals which do not contain a bit of defects or misaligned clusters and also take into account oxygen evolution after heat treatment, it is necessary to strictly control V/G.

The control of the V/G is performed by adjusting the pulling speed V. It is known that the distance between the melt face and the insulating member severely affects the temperature slope G. Therefore, in order to control the V/G in a very narrow variation allowable width, the distance between the melted surface and the heat insulating member must be kept constant. However, since the amount of melt is reduced as the crystal growth of the crucible is increased, in order to keep the distance between the melt surface and the heat insulating member constant, it is necessary to raise the crucible supporting the crucible, so it is necessary to accurately measure the liquid level. And precisely control the amount of rise of 坩埚 based on the measured value.

As described above, there are various methods for accurately measuring and precisely controlling the liquid level position. However, in recent years, the conditions for drawing high-quality single crystals have become very strict, and the measurement accuracy of the liquid surface position has to be further improved. In particular, it is not necessary to control the variation of the distance between the heat insulating member and the melt surface to be ±0.2 mm or less, and it is not necessary to further improve the accuracy of the liquid surface position.

The method for obtaining the melting level and the position of the reflector described in Patent Document 2 is to detect the edge of each of the real image and the mirror image of the reflector, and to obtain the reflection based on the difference between the rightmost edge and the leftmost edge. The diameter of each of the real image and the image of the body is obtained from these diameters to determine the distance from the camera to the real image of the reflector and the distance to the mirror image of the reflector. Therefore, it has a problem that the diameter of each of the real image and the mirror image of the reflector greatly varies with the method of binarization processing for detecting the edge.

Accordingly, it is an object of the present invention to provide a method for producing a single crystal which can more accurately measure and precisely control the liquid level of the melt.

In order to solve the above problem, the method for producing a single crystal of the present invention is a method for producing a single crystal according to the Czochralski method, which comprises: a single crystal crystal pulling program, which is melted from a crucible provided in a reaction chamber. The liquid crystal pulling single crystal; the single crystal pulling program includes: photographing the furnace structure in the reaction chamber and the liquid surface of the melt chamber from obliquely above by a camera disposed outside the reaction chamber; detecting the camera The edge shape of each of the real image of the furnace structure and the image of the furnace interior reflected on the liquid surface of the melted liquid in the photographic image; the installation angle ( θ _c ) and the focal length (f) based on the camera Projecting and transforming the edge shape of each of the real image and the image of the in-furnace structure onto the reference plane; and the first matching ratio when shape matching is performed on the edge shape of the real image of the furnace structure on the reference plane shape of the reference shape, the calculated size of the real image representative of a reactor internal structure (radius r _f); from the reference plane corresponding to the furnace structure The maximum rate matching shape when the second reference edge shape matching the shape of the mirror shape, the above-described furnace structure of the mirror is calculated representative dimension (radius r _m).

According to the present invention, it is possible to accurately determine the representative size of each of the real image and the mirror image of the structure in the furnace. Therefore, the liquid level position of the melt can be correctly calculated using these representative sizes.

Preferably, the method for producing a single crystal of the present invention is based on the representative size (radius r _f ) of the real image of the furnace structure and the installation angle ( θ _c ) of the camera, from the installation position of the camera to the furnace. The first distance (L _{fcos θ c} ) of the real image of the structure is calculated from the installation position of the camera based on the representative size (radius r _m ) of the mirror image of the furnace structure and the installation angle ( θ _c ) of the camera. The second distance (L _{mcos θ c} ) of the mirror image of the in-furnace structure calculates the liquid level position of the melt from the first distance (L _{fcos θ c} ) and the second distance (L _mcos θ _c ). Thereby, the liquid level position can be correctly controlled in the single crystal pulling procedure.

In the method for producing a single crystal of the present invention, it is preferable that the position in the vertical direction of the real image of the furnace structure is calculated based on the installation position of the camera and the first distance (L _{fcos θ c} ), based on the installation position of the camera. And the second distance (L _{mcos θ c} ) calculates a position in the vertical direction of the mirror image of the furnace structure, and calculates a position in a vertical direction of the real image of the furnace structure and a vertical direction of a mirror image of the furnace structure. The midpoint of the position is used to calculate the liquid level position. Thereby, the liquid level position can be calculated simply and accurately.

In the method for producing a single crystal of the present invention, it is preferable that the furnace structure and the above-described furnace structure are calculated from a value of 1/2 of a difference between the first distance (L _{fcos θ c} ) and the second distance (L _{mcos θ c} ) The interval of the liquid surface (gap value ΔG = {(L _{f -} L _m ) × cos θ _c } / 2). Thereby, the gap value can be calculated simply and accurately.

In the method for producing a single crystal of the present invention, it is preferable that the reference shape is an actual representative size of the furnace structure in consideration of thermal expansion in a thermal environment in the reaction chamber in the single crystal pulling program ( r _actual ) calculates the first and second distances, respectively. Thereby, the accuracy of shape matching can be further improved.

In the present invention, the furnace interior structure is a heat insulating member disposed above the weir, and the representative size of the furnace inner structure is the heat insulating member penetrating through the single crystal drawn by the melt. In the matching of the radius of the circular opening and the above-mentioned furnace structure to the reference shape, the approximate expression obtained by approximating the edge shape of the opening of each of the real image and the mirror image of the heat insulating member is obtained. The radius of the opening of the real image (r _f ) and the radius of the opening of the mirror image (r _m ). Thereby, when the melt in the reaction chamber is photographed by the camera, the installation angle of the camera can be measured by the heat insulating member appearing on the photographed image.

In the present invention, preferably, the furnace structure has a straight portion, and the representative size of the furnace structure is a length of the straight portion; and an edge shape of the real image matches a reference shape of the furnace structure. The length of the straight portion is obtained from an approximate expression obtained by linearly approximating the edge shape of the straight portion. In this way, the shape matching method can calculate the liquid level position from the linear dimension of the shape object in the furnace.

Preferably, the method for producing a single crystal according to the present invention is characterized in that the position of the camera is specified based on the rear distance of the camera which has been grasped beforehand, and the edge shape of each of the real image and the image of the furnace structure is projected and converted. Go to the above reference plane. Thereby, the error due to the projection conversion of the camera can be removed. Therefore, the liquid level position of the melt can be accurately measured based on the photographed image of the camera, whereby the liquid level position can be precisely controlled.

Furthermore, the method for producing a single crystal of the present invention is a method for producing a single crystal according to the Czochralski method, which comprises a single crystal pulling procedure for pulling a single crystal from a melt provided in a crucible in a reaction chamber, The single crystal pulling program photographs the reaction chamber by a camera disposed outside the reaction chamber, and projects and converts the captured image of the camera based on the installation angle ( θ _c ), the focal length (f), and the rear distance of the camera.

According to the present invention, it is possible to remove errors due to projection conversion of the camera. Therefore, the liquid level position of the melt can be accurately measured based on the photographed image of the camera, whereby the liquid level position can be precisely controlled.

According to the present invention, there is provided a method for producing a single crystal which can more accurately measure and precisely control the liquid level position of the melt.

10‧‧‧矽Single crystal manufacturing equipment

11‧‧‧Quartz

12‧‧‧heater

13‧‧‧矽融液

13a‧‧‧ melt level

14‧‧ ‧ kinds of crystal

15‧‧‧矽Single crystal (ingot)

15a‧‧‧Neck

15b‧‧‧Shoulder

15c‧‧‧ Body Department

15d‧‧‧ tail

16‧‧‧坩埚Support

17‧‧‧Insulation member (furnace structure)

17a‧‧‧ Openings of insulating members

17b‧‧‧Open edge shape

18‧‧‧ camera

18a‧‧‧Photographing device

18b‧‧‧ lens

19‧‧‧Reaction room

19a‧‧‧ Observation window of the reaction chamber

21‧‧‧坩埚 Lifting device

22‧‧‧ Pull drive

24‧‧ ‧ Calculation Department

26‧‧‧Control Department

a‧‧‧Working distance

B‧‧‧ rear distance

C‧‧‧Center position of the camera

C ₀ ‧‧‧ coordinate origin of the reference plane

F‧‧‧Center position of the lens (main point)

f ₁ ‧‧‧Focus distance

L‧‧‧ optical axis

L _c ‧‧‧distance from the center of the camera to the origin of the coordinates of the reference plane

L _f ‧‧‧Distance from the center of the opening of the real image of the insulating member

L _m ‧‧‧Distance to the center of the mirrored opening of the insulating member

Ma‧‧‧ Real image of thermal insulation components

Mb‧‧ Mirror image of insulation

P‧‧‧ Any point on the camera 18a

P'‧‧‧ Projection point of an arbitrary point on the imaging device 18a

r _f ‧‧‧ Radius of the opening of the real image of the insulating member

r _m ‧‧‧ Radius of the mirrored opening of the insulating member

△a‧‧‧Change in working distance

△G‧‧‧ gap value

θ _c ‧‧‧ camera angle

Fig. 1 is a schematic cross-sectional view showing the configuration of a single crystal production apparatus in the present embodiment.

FIG. 2 is a view showing a relationship between a real image and a mirror image of the heat insulating member 17 in the photographed image of the camera 18.

FIG. 3 is a schematic view for explaining a method of converting a quadratic coordinate of a photographic image into a coordinate of a real space. FIG.

Fig. 4 is a graph showing the luminance of a pixel column in a specific horizontal direction and its differential value in a captured image.

FIG. 5 is a schematic view for explaining a method of calculating the absolute value of the gap value ΔG from the center position of the real image and the mirror image of the heat insulating member 17.

Fig. 6 (a) and (b) are schematic views for explaining the principle of the camera and the measuring method of the rear distance.

Fig. 7 is a flow chart for explaining a method of producing monocrystalline crystals.

Fig. 8 is a side view showing the shape of a single crystal ingot.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the embodiments shown below are specifically described in order to enable a clearer understanding of the present invention, and are not intended to limit the present invention unless otherwise specified. In addition, in order to make the features of the present invention easier to understand, the drawings used in the following description may be enlarged and displayed as a part of an important part, and the dimensional ratios and the like of the respective constituent elements are not necessarily the same as the actual ones.

Fig. 1 is a schematic cross-sectional view showing the configuration of a single crystal production apparatus in the present embodiment.

As shown in Fig. 1, a single crystal production apparatus 10 has a substantially cylindrical reaction chamber 19, and a quartz crucible 11 for storing a molten liquid is provided inside the reaction chamber 19. The reaction chamber 19 may be, for example, a double-wall structure in which a certain gap is formed inside, and by allowing cooling water to flow into the gap, the reaction chamber 19 is prevented from being heated when the quartz crucible 11 is heated.

An inert gas such as argon is introduced into the inside of the reaction chamber 19 as described above before the start of the drawing of the single crystal. At the top of the reaction chamber 19, a pull drive unit 22 is provided. The driving device 22 is pulled so that the seed crystal 14 as the growth core of the single crystal ingot 15 and the single crystal ingot 15 grown therefrom are rotated while being pulled upward. On the above-described pulling drive device 22, a sensor (not shown) for sending the crystal length information of the single crystal ingot 15 based on the pulling amount of the single crystal ingot 15 can be formed.

There is a slightly cylindrical heater 12 inside the reaction chamber 19. The heater 12 heats the quartz crucible 11. The ruthenium support (graphite crucible) 16 and the quartz crucible 11 are housed inside the heater 12. The quartz crucible 11 is a substantially cylindrical quartz vessel integrally formed of quartz and having an open surface formed above.

The quartz crucible 11 stores the molten thorium 13 after the solid crucible is melted. The ruthenium support 16 is, for example, formed entirely of graphite, and surrounds and closely supports the quartz crucible 11. The crucible support 16 maintains the shape of the quartz crucible 11 which has been softened when the crucible is melted, and realizes the task of supporting the quartz crucible 11.

A squat elevator device 21 is provided below the dam support 16. The crucible elevator device 21 supports the crucible support body 16 and the quartz crucible 11 from the lower side, and moves the quartz crucible 11 up and down so that the melted surface of the crucible melt 13 changes as the crucible single crystal ingot 15 is pulled. The liquid level of 13a is in the proper position. Thereby, the position of the melt surface 13a of the crucible melt 13 is controlled. The lifter device 21 is simultaneously provided with support so that the support body 16 and the quartz crucible 11 can be rotated according to a predetermined number of rotations during the drawing.

A heat insulating member (shield cylinder) 17 is formed on the upper surface of the quartz crucible 11 to cover the upper surface of the molten metal 13, that is, the melt surface 13a. The heat insulating member 17 is formed of a heat insulating plate formed, for example, in a mortar shape, and has a circular opening 17a at its lower end. Further, the outer edge portion of the upper end of the heat insulating member 17 is fixed to the inner surface side of the reaction chamber 19.

As described above, the heat insulating member 17 prevents the unilateral crystal ingot 15 after the drawing from being subjected to the radiant heat from the mash liquid 13 in the quartz crucible 11 to change the heat history and deteriorate the quality. In addition, as the heat insulating member 17 described above, the pull-in ambient gas that has been introduced into the interior of the single crystal production apparatus 10 is induced from the side of the single crystal ingot 15 to the side of the melted liquid 13, thereby controlling the melting The residual oxygen amount in the vicinity of the melt surface 13a of the liquid 13, or the xenon vapor or SiO which is evaporated from the molten liquid 13 causes the single crystal ingot 15 to reach the target quality. The control of the pull-in ambient gas as described above depends on the flow velocity when passing through the furnace pressure and the gap between the lower end of the heat insulating member 17 and the melt surface 13a of the melted liquid 13. In order to achieve the target quality of the single crystal ingot 15, it is necessary to correctly set the distance (gap value) ΔG from the lower end of the heat insulating member 17 to the melt surface 13a of the mash 13 . Further, the pulling ambient gas may include hydrogen, nitrogen, or other predetermined gas as a dopant gas in an inert gas such as argon.

A camera 18 is provided outside the reaction chamber 19. The camera 18 is, for example, a CCD camera, and passes through the observation window 19a formed in the reaction chamber 19 to photograph the inside of the reaction chamber 19. The set angle θ _{c of the} camera 18 with respect to the drawing axis Z of the single crystal ingot 15 is first formed at a predetermined angle, and the camera 18 has an optical axis L inclined with respect to the vertical direction. That is, the camera 18 photographs the upper surface region of the quartz crucible 11 including the circular opening 17a of the heat insulating member 17 and the melt surface 13a from obliquely above.

The camera 18 is connected to the calculation unit 24 and the control unit 26. Further, the calculation unit 24 and the pull drive unit 22 are connected to the control unit 26. The control unit 26 controls the amount of movement (rise amount) of the quartz crucible 11 based on the crystal length data of the single crystal ingot 15 obtained from the sensor of the drawing drive device 22 and the crystal length data obtained from the camera 18.

In order to control the amount of movement of the quartz crucible 11, the control unit 26 performs position correction control of the quartz crucible 11 based on the position correction data of the quartz crucible 11 calculated by the calculation unit 24.

The calculation unit 24 calculates the liquid level position of the mash liquid 13 based on the image of the thermal image of the heat insulating member 17 that is imaged by the camera 18 and the image of the heat insulating member 17 that is reflected on the melt surface 13a of the mash. Therefore, the camera 18 captures the real image and the mirror image of the melt surface 13a of the mash 13 and the opening 17a of the heat insulating member 17 which are seen through the circular opening 17a at the lower end of the heat insulating member 17, and the calculation unit 24 measures the partition. The actual height position of the melt surface 13a is calculated from the interval between the real image and the mirror image of the heat member 17.

2 is a photographic image of the camera 18 for explaining the relationship between the real image and the mirror image of the heat insulating member 17.

As shown in Fig. 2, the mash liquid 13 can be seen through the opening 17a of the heat insulating member 17, and the real image Ma of the heat insulating member 17 can be reflected on the photographic image. Further, since the melted liquid 13 is formed inside the opening 17a of the heat insulating member 17, and the melted surface 13a of the molten metal 13 is mirror-finished, the mirror image Mb of the heat insulating member 17 is reflected on the melted surface 13a. Since the heat insulating member 17 is fixed to the reaction chamber 19 side, the position of the real image Ma of the heat insulating member 17 does not change and remains at the same position in the image.

On the other hand, the mirror image Mb of the heat insulating member 17 reflected on the melt surface 13a changes as the distance between the heat insulating member 17 and the melt surface 13a changes. Therefore, the interval D between the real image Ma of the heat insulating member 17 and the mirror image Mb reflected on the melt surface 13a, and the melt surface 13a caused by the consumption of the melt 13 or the rise and fall of the quartz crucible 11 as the crystal grows. Move up and down. Further, the position of the melt surface 13a is the midpoint of the interval D between the real image Ma and the mirror image Mb. For example, when the melt surface 13a and the lower end of the heat insulating member 17 are aligned, the interval between the real image Ma and the mirror image Mb of the heat insulating member 17 becomes zero, and when the melt surface 13a is gradually lowered, from the lower end of the heat insulating member 17 The distance (gap value) ΔG to the melt surface 13a is also gradually elongated. The gap value ΔG at this time can be calculated as a value of 1/2 of the interval D between the real image Ma and the mirror image Mb of the heat insulating member 17 (that is, D = ΔG × 2), and can be imaged by the camera 18. The pixel size and the prime number are calculated.

In the image method as described above (that is, the liquid level position is measured from the relationship between the real image Ma and the mirror image Mb of the heat insulating member 17), the image captured from the camera 18 detects the individual edges of the real image Ma and the mirror image Mb of the heat insulating member 17. The shape is calculated by recalculating the size of each opening, and the gap value ΔG is calculated from the two dimensions (the interval between the lower end of the heat insulating member 17 and the melt surface 13a: see Fig. 1). In detail, the distance (first distance) in the vertical direction from the camera 18 to the real image Ma is calculated based on the opening radius of the real image Ma of the heat insulating member 17, and the slave camera 18 is calculated based on the opening radius of the mirror image Mb of the heat insulating member 17. The distance ΔG is calculated from the difference between these distances by the distance (second distance) in the vertical direction of the mirror image Mb. This is because the position of the opening of the mirror image Mb of the heat insulating member 17 viewed from the camera 28 in the vertical direction is farther than the opening of the real image Ma of the heat insulating member 17 by 2 ΔG, and the mirror image Mb of the heat insulating member 17 The opening ratio of the opening with respect to the opening of the real image Ma of the heat insulating member 17 is proportional to the gap value ΔG, and the larger the ΔG is, the smaller the size of the opening of the mirror image Mb is.

However, since the camera 18 provided outside the reaction chamber 19 photographs the melt surface 13a from obliquely upward, the shape of the circular opening 17a of the heat insulating member 17 is not a perfect circular shape, and the captured image is distorted. In order to accurately calculate the opening size of each of the real image Ma and the mirror image Mb of the heat insulating member 17, it is necessary to correct the distortion of the image. Therefore, in the present embodiment, the opening of each of the real image Ma and the mirror image Mb of the heat insulating member 17 captured by the camera 18 is projected onto the reference plane, and the size of the opening 17a when viewed from directly above is obtained.

Further, a circle radius obtained by approximating the opening edge shape (sample value) in a minimum flat method can be used as the opening size (representative size) of each of the real image Ma and the mirror image Mb of the heat insulating member 17. The distance D = 2 ΔG between the real image Ma and the mirror image Mb is determined based on the size of the real image and the mirror image Mb of the heat insulating member 17 thus obtained.

The position of each of the real image Ma and the mirror image Mb of the heat insulating member 17 in the vertical direction is not necessarily obtained from the radius of the circular opening, and may be obtained by other dimensions. For example, in the case where a part of the opening 17a of the heat insulating member 17 is a straight line, the straight line approximation can be performed by the least square method, and the length of the straight line obtained by the approximation formula can be employed.

The position of the image of the heat insulating member 17 having an arbitrary opening shape in the vertical direction can be calculated by matching the design with the opening shape of the heat insulating member 17 at a predetermined reduction ratio. In other words, the reference shape of the opening shape of the heat insulating member 17 after changing the reduction ratio is prepared in accordance with the distance from the installation position of the camera 18, and the residual value when the edge shape of the image of the heat insulating member 17 is matched with the reference shape is used. The reduction ratio of the reference shape of the smallest (maximum matching ratio) is calculated as the actual distance from the installation position of the camera 18 to the image of the heat insulating member 17. In this way, the position of each of the real image and the mirror image of the heat insulating member 17 based on the installation position of the camera 18 can be obtained.

3 is a schematic view for explaining a method of converting a quadratic coordinate projection of a photographic image into a coordinate of a real space.

As shown in the diagram on the left side of FIG. 3, since the camera 18 is photographed from the obliquely upward direction in the reaction chamber 19, the shape of the opening 17a of the heat insulating member 17 in the photographed image is distorted, and becomes an image having a sense of distance. That is, the image on the lower side closer to the camera 18 is larger than the upper side. Therefore, in order to accurately calculate the opening size of each of the real image and the mirror image of the heat insulating member 17, it is necessary to correct the distortion of the image. Therefore, the coordinate projection of the photographic image of the camera 18 is converted into a coordinate set on the reference plane at the same height position as the lower end of the heat insulating member 17, to correct the distortion.

The figure on the right side of Fig. 3 shows the coordinate system when image correction is performed. In this coordinate system, the reference plane is the xy plane. Further, the origin C ₀ of the XY coordinates is a straight line drawn from the center position C of the imaging device 18a of the camera 18 and passing through the center position F (0, y _f , z _f ) of the lens 18b of the camera 18 (a little lock line) ) the intersection with the reference plane. This line is the optical axis of the camera 18.

Further, the drawing direction of the single crystal 15 is the positive direction of the z-axis, the center position C (0, y _c , z _c ) of the image pickup device 18a and the center position F (0, y _f , z _f ) of the lens 18b. Located in the yz plane. The coordinates (u, v) in the image shown on the left side of Fig. 3 are represented by the pixels of the imaging device 18a, and correspond to any point P (x _p , y) on the imaging device 18a shown by the following formula (1). _p , z _p ).

Here, α _u and α _v are the pixel sizes in the lateral direction and the longitudinal direction of the imaging device 18a, and y _c and z _c are the y coordinate and the z coordinate of the center position C of the imaging device 18a. Further, as shown in the right diagram of FIG. 3, θ _c is an angle between the optical axis of the camera 18 and the z-axis, which is the installation angle of the camera 18.

Further, the center position C (0, y _c , z _c ) of the imaging device 18a is such that the center position F (0, y _f , z _f ) of the lens 18b of the camera 18 and the focal length f _{1 of the} lens are used, Formula (2) is indicated.

Here, when Equation (2) is explained in detail, when L _c is the distance from the coordinate origin C ₀ on the reference plane to the center position C (0, y _c , z _c ) of the imaging device 18a, y _c , z _c are as shown in the following formula (3).

a is the distance from the coordinate origin C ₀ to the center position F of the lens 18b of the camera 18, and b is the distance from the center position F of the lens 18b to the center position C of the imaging device 18a, from the coordinate origin C ₀ to the shooting The distance L _c of the center position C of the device 18a is as shown in the following formula (4).

[Number 4] L _c = a + b (4)

Further, from the imaging formula of the lens, using the distances a, b, the focal length f _{1 is} expressed by the following formula (5).

When the distance b is removed from the equations (4) and (5) and L _c is expressed by the distance a and the focal length f _{1 , it is} expressed by the following formula (6).

The value of the distance a from the coordinate origin C ₀ to the center position F of the lens 18b of the camera 18 can be expressed by the following equation (7) by the center position F (0, y _f , z _f ) of the lens 18b of the camera 18.

Therefore, the above formula (2) is obtained from the equations (3), (6), and (7).

Considering that the lens 18b is a pinhole, an arbitrary point P(x _p , x _p , x _p ) on the imaging device 18a is projected on the reference plane by F(0, y _f , z _f ), and its projection point P' ( X, Y, 0) can be represented by the following formula (8).

[Number 8]

Using the equations (1), (2), and (8), it is possible to obtain a real image or a mirror image of the circular opening 17a of the heat insulating member 17 projected on the reference plane.

When the center position FF (0, y _f , z _f ) of the lens 18b is known to the distance b of the center position C (0, y _c , z _c ) of the photographing device 18a, the coordinate y of the center position F of the lens 18b is known. _f , z _f , can be expressed by the following equation (9) using the distance b and the coordinates y _c , z _c of the center position C of the imaging device 18a.

Thus, in the case where the distance b (main point) from the center position F (main point) of the lens 18b to the center position C of the photographing device 18a is known, the projection point P' can be expressed by the value of the back distance ( X, Y, 0).

Next, a method of calculating the radius of the opening 17a of the heat insulating member 17 will be described. The least square method can be used as a method of calculating the coordinates (x ₀ , y ₀ ) and the radius r of the center position of the opening 17a from the coordinates of the real image and the mirror image projected on the reference plane. The opening 17a of the heat insulating member 17 is circular, and the image of the opening 17a satisfies the equation of the circle represented by the following formula (10).

[10] ( x - x ₀ ) ² + ( y - y ₀ ) ² = r ² (10)

Here, the calculation of (x ₀ , y ₀ ) and r in the equation (10) uses the least squares method. In order to easily perform the calculation in the least square method, the deformation shown in the following formula (11) is performed.

[Number 11]

The variables a, b, and c in the equation (11) are obtained by the least squares method. This is a condition for obtaining the sum of the squares of the difference between the equation (11) and the measured point, which is obtained by solving the partial differential equation represented by the following formula (12).

Further, the solution of the formula (12) can be calculated by the simultaneous equation shown by the following formula (13).

In this manner, the radius r _f and r _m of the openings of the real image Ma and the mirror image Mb of the heat insulating member 17 projected on the reference plane can be calculated using the least square method.

When the gap value ΔG is measured in the present embodiment, stable detection of the real image Ma and the mirror image Mb of the heat insulating member 17 is necessary. In general, the method of detecting the position of a predetermined image from the image data is a method of setting a threshold value based on the luminance value of the image and binarizing the image. However, when the edge detection of the image of the heat insulating member 17 in the reaction chamber 19 is performed by the binarization processing, the detection position may be deviated due to the change in luminance accompanying the change in the temperature inside the furnace.

In order to eliminate this influence, in the present embodiment, a method of detecting the edge of the image of the heat insulating member 17 based on the change in luminance is used instead of the general binarization method. That is, in the detection of the edge (outline) of the heat insulating member 17, a differential image indicating the amount of change in luminance of the original image is used. The data of the differential image has a maximum value at the edge portion of the real image Ma of the heat insulating member 17 and the mirror image Mb thereof, regardless of the luminance of the original image. Therefore, the position of the maximum value of the differential image is used as the detection edge, thereby reducing the measurement error caused by the influence of the luminance change, and the accurate size of the real image of the heat insulating member 17 and the mirror opening 17a can be stably detected.

In the edge detection, the luminance distribution in the lateral direction of the photographic image is differentiated, thereby obtaining the amount of change in luminance. 4 is a graph showing the luminance of the pixel sequence in the horizontal direction of the photographic image and the differential value thereof. As shown in FIG. 4, when the luminance of the melted portion of the center portion changes with respect to the real image portion of the heat insulating member on both sides of the pattern, the differential value of the luminance does not change, and the mirror image corresponding to the heat insulating member is clearly determined. The boundaries of the parts.

The differential value of the luminance is calculated by the difference in luminance in the horizontal direction of the image, and in this case, it is greatly affected by the noise included in the image. Therefore, in the present embodiment, the average value of the nine-pixel component of the calculated differential value of the luminance is calculated, thereby removing the influence of the noise. By detecting the peak position of the calculated luminance differential data as described above, the position of the real image of the heat insulating member 17 and the edge position of the mirror image can be determined.

FIG. 5 is a schematic view for explaining a method of calculating the gap value ΔG from the opening radii r _f and r _m of the real image Ma and the mirror image Mb of the heat insulating member 17 .

As shown in FIG. 5, in the case where the heat insulating member 17 (F) is horizontally disposed, the center coordinates (X _hc , Y _hc , 0) of the lower end of the real image of the heat insulating member 17 and the center coordinates of the mirrored lower end of the heat insulating member 17 are shown. (X _hc , Y _hc , 0) exists with the melt surface 13a interposed therebetween, and the straight line connecting these two points passes (X _hc , Y _hc , 0) and becomes a straight line parallel to the Z axis. On the other hand, the central coordinates (X _mc , Y _mc , 0) of the mirror image of the heat insulating member 17 on the reference plane are such that the central coordinates (X _mc , Y _mc , Z _gap ) of the mirror image of the heat insulating member 17 are projected. The coordinates on the reference plane, therefore, the central coordinates (X _mc , Y _mc , Z _gap ) of the mirror image of the heat insulating member 17 are located at the center coordinates of the mirror image of the heat insulating member 17 passing through the reference plane (X _mc , Y _mc , 0 And on the line of the center position F(0, y _f , z _f ) of the lens 18b.

Therefore, the distance from the center position F of the lens 18b of the photographing device to the mirror-image opening of the heat insulating member 17 is the distance L _m from the center position F of the lens 18b of the photographing device to the center of the mirror image of the heat insulating member 17 In the case of L _f , the distances L _m and L _f represent the following formula (14).

[Number 14] L _m = L _f +2 △ G /cos θ _c (14)

According to this formula, the gap value ΔG can be expressed as in the formula (15).

[Number 15] 2 △ G = ( L _m - L _f ) cos θ _c (15)

Thus, it can be understood that the gap value ΔG can be calculated by obtaining the distances L _f and L _m .

The mirror image of the heat insulating member 17 reflected on the melt surface 13a is further 2 ΔG away from the actual heat insulating member 17, and therefore, the radius r _m of the mirror image of the heat insulating member 17 appears to be smaller than the radius r _{f of the} real image. Moreover, it has been known that in the furnace temperature environment in the drawing, the opening radius thereof is smaller than the design size (the size at normal temperature) due to the thermal expansion of the heat insulating member 17. Therefore, considering that the opening radius (theoretical value) of the thermal expansion is r _actual , the measured radius of the opening radius of the real image of the heat insulating member 17 is r _f , and the measured value of the opening radius of the mirror image of the heat insulating member 17 is r _m , then Equation (16) calculates the distances L _f , L _m .

From the above equations (15) and (16), the gap value ΔG can be calculated as in the following equation (17).

[Number 17] 2 △ G = L _c ( r _actual / r _m - r _actual / r _f ) cos θ _c (17)

In this manner, the gap value ΔG can be obtained from the opening radius measurement values r _f and r _m of the real image and the mirror image of the heat insulating member 17 .

As a method of calculating the gap value ΔG, a method of calculating the gap value ΔG from the difference between the Y coordinate values of the center positions of the openings of the real image Ma and the mirror image Mb of the heat insulating member 17 is known. However, in this calculation method, the range in which the approximate circle is obtained in the vertical direction of the image is narrow, and the restriction in the Y coordinate direction (longitudinal direction of the image) is large. Therefore, there is a problem described later: the influence of the detected change of the edge is affected. On the other hand, the calculation error of the gap value ΔG is increased. On the other hand, when the gap value ΔG is calculated from the radius of the circular opening of the heat insulating member 17, the approximate circle is calculated in addition to the Y coordinate of the center position of the approximate circle for the calculation of the gap value ΔG. The X coordinate of the center position and the radius of the approximate circle, especially the value of the radius of the approximate circle in the X coordinate direction (longitudinal direction of the image), can reduce the influence of the edge detection variation because the data of the left and right ends can be obtained.

Next, the rear distance of the camera 18 will be described.

As shown in Fig. 3, the coordinates P(x _p , y _p , z _p ) of a point on the photographic image are determined based on the center position C(0, y _c , z _c ) of the imaging device, and the coordinates P(x _{p )} , y _p , z _p ) The coordinates P′(X, Y, 0) after the projection is converted onto the reference plane are determined based on the origin (0, 0, 0) on the reference plane. Moreover, the center position C(0, y _c , z _c ) of the photographing device is based on the distance L _c from the origin (0, 0, 0) on the reference plane to the center position C of the photographing device and the setting of the camera 18. The angle θ _c is determined. Therefore, in order to convert the coordinates P(x _p , y _p , z _p ) of a point on the photographic image to the coordinates P'(X, Y, 0) on the reference plane, it is necessary to have an origin from the reference plane. (0, 0, 0) The correct value of the distance L _{c to} the center position C of the photographing device and the set angle θ _c of the camera 18. Then, as long as the rear distance b of the camera 18 and the set angle θ _{c are known} , the set position F (0, y _f , z _f of the center position C (0, yc, z _c ) of the camera 18 with respect to the imaging device can be obtained. ).

6(a) and 6(b) are schematic views for explaining the principle of the camera and the measuring method of the rear distance.

As shown in FIG. 6(a), the distance L _c from the origin (0, 0, 0) on the reference plane to the center position C of the imaging device can be found as the working distance a and the rear distance b of the camera 18. Total value. Here, the working distance a is a variable value which is the distance from the main point of the lens 18b to the subject, and the rear distance b is the distance from the main point of the lens 18b to the prime surface (light receiving surface) of the imaging device 18a. A fixed value determined by the configuration of the camera 18.

In general projection conversion, the focal length f _{1 is} used instead of the rear distance b, but in order to achieve very high precision projection conversion, it is necessary to use the back distance value according to the imaging formula of the lens. However, the camera 18 generally used in the single crystal manufacturing apparatus 10 is a pan-product, and the lens system is a composite lens. Unlike a single lens, the main point is located at the center of the lens, so the working distance a and the rear distance b of the lens design are The correct value is unknown. If the correct values of the working distance a and the rear distance b of the camera 18 are not known, the correct value of the distance L _c to the subject cannot be known, and the coordinates P(x _p , y _p , z _p in the photographic image cannot be obtained. The projection point P'(X, Y, 0) converted onto the reference plane is correctly projected.

Therefore, in the present embodiment, the correct value of the rear distance b of the camera 18 is obtained in advance, thereby improving the measurement accuracy of the liquid level position.

As shown in Fig. 6(a), when the working distance is a and the rear distance is b, the focal length f _{1 is} as described above in the equation (2c) according to the imaging formula of the lens.

Further, the actual size of the subject is H, and when the size of the subject reflected in the image captured by the imaging device is h, the lens magnification is expressed by the equation (18).

As shown in Fig. 6(b), the subject is moved Δa rearward so that the size of the subject on the face of the element is reduced, and when h is changed to h', the lens magnification is expressed by the equation (19).

According to the above formula (18) and formula (19), the working distance a is as shown in the formula (20).

Further, according to the above formula (5), the trailing distance b is as in the formula (21).

From the above results, the working distance a can be obtained from the amount of change Δa of the working distance and the amount of change h-h' of the arbitrary size on the corresponding prime surface, and can be obtained from the lens as shown in the equation (21). The focal distance f ₁ and the working distance a determine the back distance b. In this way, the rear distance b can be known by knowing the focal length f _{1 of the} lens and the working distance a, and the actual size H of the subject can be accurately obtained from an arbitrary size h on the prime surface. That is, the coordinates of any point P on the photographic image can be correctly projected onto the reference plane.

Next, a method of producing a single crystal using the single crystal production apparatus 10 will be described with reference to FIGS. 7 and 8.

First, the back distance b of the camera 18 is measured before the manufacture of the single crystal. The rear distance n is a value inherent to the camera, and can be used continuously until the camera 18 is replaced as long as it is measured. The measurement of the distance b from the camera 18 can be performed at any time, as long as the drawing process of the single crystal is started before the camera 18 is placed in the reaction chamber 19, but it is also possible to manufacture the single crystal. The procedure is carried out, for example, as described above in a hot environment in which a mash melt is generated.

In the manufacturing process of the single crystal, first, the polycrystalline silicon of the raw material is introduced into the quartz crucible 11, and as shown in FIG. 1, the polycrystalline crucible in the quartz crucible 11 is heated and melted by the heater 12 disposed so as to surround the quartz crucible 11, thereby producing a crucible. Liquid 13 (step S21).

The position of the melt surface 13a is unknown at a stage before the start of the pulling process after the formation of the mash 13 is made. Therefore, the calculation unit 24 first determines the liquid level position from the interval between the real image Ma of the heat insulating member 17 and the mirror image Mb reflected on the melt surface 13a.

In this manner, after the initial liquid level position of the melt surface 13a is correctly set, the seed crystal 14 is lowered to contact the molten liquid 13 with the liquid surface (step S22). Then, the contact state with the mash liquid 13 is maintained, and a crystal pulling procedure for slowly pulling the seed crystals to grow the single crystal is carried out (steps S23 to S26).

In the pull-up procedure of the single crystal, the following steps are sequentially performed, and finally, the single crystal is detached from the melt surface: a neck forming procedure for forming the neck portion 15a which is reduced in thickness for thinning without stepping (step S23) a shoulder growth program for forming the shoulder portion 15b whose crystal diameter is gradually increased (step S24), and a main body portion growing program for forming the main body portion 15c whose crystal diameter is maintained at a predetermined diameter (for example, about 300 mm) (step S25) The tail cultivation program of the tail portion 15d in which the crystal diameter is gradually reduced (step S26). By the above, the single crystal ingot 15 having the neck portion 15a, the shoulder portion 15b, the body portion 15c, and the tail portion 15d as shown in Fig. 8 is completed.

In the pull-up procedure of the single crystal, the liquid level position of the molten liquid 13 is calculated based on the data of the center position of the single crystal 15 to calculate the gap value ΔG of the melt surface 13a of the molten liquid 13 and the heat insulating member 17. . Then, based on the gap value ΔG, the ratio of the crystallization temperature slope next to the solid-liquid interface in the crystal center portion of the 矽 single crystal 15 and the crystallization temperature slope next to the solid-liquid interface in the crystal peripheral portion of the 矽 single crystal 15 is controlled, respectively. Ambient gas flow rate.

Thereby, as the drawing of the single crystal 15 progresses, the neck forming process (step S23), the shoulder breeding program (step S24), and the body part breeding program (step S25) are started from the drawing of the single crystal. In the tail cultivation program (step S26), the gap value ΔG can be set with high accuracy until the drawing of the single crystal is completed.

Further, during the pulling process, the position of the melt surface 13a with respect to the heater 12 can be kept constant irrespective of the decrease of the mash melt 13, thereby maintaining the heat radiation distribution for the mash liquid 13 constant. Therefore, the slope of the crystallization temperature next to the solid-liquid interface in the central portion of the crystal of the single crystal and the slope of the crystallization temperature next to the solid-liquid interface in the peripheral portion of the crystal of the single crystal are controlled to the optimum values.

As described above, in the method for producing a single crystal of the present embodiment, the edge shape projection of each of the real image and the mirror image of the heat insulating member 17 and the like appearing in the image captured in the reaction chamber 19 by the camera 18 is imaged. In the conversion to the reference plane, the shape of the reference image having the largest matching ratio when the shape of the real image and the image of the in-furnace structure on the reference plane is matched with the shape of the image is calculated, and the real image and the mirror image are respectively calculated. Since the size (the opening size of the heat insulating member 17) is small, the influence of the fluctuation of the edge detection can be suppressed, and the representative size can be calculated more accurately. Therefore, it is possible to more accurately measure and precisely control the liquid level position of the melt from these representative sizes. Further, in the present embodiment, the rear distance of the camera 18 is measured before the start of the drawing process of the single crystal, and the second angle of the captured image of the camera 18 is measured using the installation angle, the focal length, and the rear distance of the camera 18. Since the coordinate projection is converted, the liquid level position of the mash 13 in the reaction chamber 19 can be more accurately measured and precisely controlled.

The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

For example, in the above-described embodiment, the case where the rear distance in the state where the camera 18 is placed in the reaction chamber 19 is measured will be described. However, the rear distance may be measured by any method, for example, before the camera 18 is placed in the reaction chamber.

Further, in the above-described embodiment, the gap value ΔG is calculated from the size of the circular opening 17a of each of the real image and the mirror image of the heat insulating member 17 which is imaged, but the present invention is not limited to a circular shape, but for example, Any shape such as an ellipse or a rectangle is used as an object. In addition, the in-furnace structure to be subjected to the dimension measurement is not limited to the heat insulating member 17, and may be another in-furnace structure.

Further, in the above-described embodiment, the method for producing the single crystal is described. However, the present invention is not limited thereto, and various methods for producing a single crystal can be used.

Claims (8)

 A method for producing a single crystal, which is a method for producing a single crystal according to the Czochralski method, comprising: a single crystal pulling procedure for drawing a single crystal from a melt provided in a crucible in a reaction chamber; The crystal pulling program includes: photographing the in-furnace structure in the reaction chamber and the liquid surface of the melt in the reaction chamber from obliquely above by a camera provided on the outer side of the reaction chamber; and detecting the inside of the furnace in the photographed image of the camera An edge shape of each of the solid image of the structure and the image of the furnace interior reflected on the liquid surface of the melt; and an edge shape of each of the solid image and the image of the furnace structure based on the installation angle and the focal length of the camera The projection is converted to the reference plane, and the representative of the real image of the furnace structure is calculated from the shape of the first reference shape having the largest matching ratio when the edge shape of the real image of the furnace structure on the reference plane is shaped. Size; the matching ratio is the largest when the shape is matched from the edge shape of the mirror image of the above-mentioned furnace structure on the above reference plane The shape of the second reference shape is used to calculate the representative size of the mirror image of the furnace structure.    The method for producing a single crystal according to the first aspect of the invention, comprising: calculating an installation position from the camera to the furnace structure based on a representative size of a real image of the furnace structure and an installation angle of the camera; a first distance of the real image; a second distance from the installation position of the camera to the mirror image of the furnace structure based on the representative size of the mirror image of the furnace structure and the installation angle of the camera; and the first distance from the first distance And the second distance calculates the liquid level position of the melt.    According to the method for producing a single crystal according to the second aspect of the invention, the position of the real image of the furnace structure in the vertical direction is calculated based on the installation position of the camera and the first distance, and the installation position based on the camera and the above The second distance calculates the position in the vertical direction of the mirror image of the structure in the furnace, and calculates the midpoint of the position in the vertical direction of the real image of the furnace structure and the position in the vertical direction of the mirror image of the furnace structure. Calculate the above liquid level position.    In the method for producing a single crystal according to the second aspect of the invention, the interval between the furnace structure and the liquid surface is calculated from a value of 1/2 of a difference between the first distance and the second distance.    The method for producing a single crystal according to any one of claims 2 to 4, wherein the reference shape is a furnace in which thermal expansion in a thermal environment in the reaction chamber in the single crystal pulling program is considered The first and second distances are calculated for the actual representative sizes of the internal structures.    The method for producing a single crystal according to any one of claims 1 to 4, wherein the furnace structure is a heat insulating member disposed above the crucible; and the representative size of the furnace structure is The radius of the circular opening of the heat insulating member penetrating through the single crystal drawn from the melt; and the matching between the furnace structure and the reference shape from the opening of the solid image and the mirror image of the heat insulating member The edge shape is approximated by a circular approximation, and the radius of the opening of the real image and the radius of the opening of the mirror image are respectively obtained.    The method for producing a single crystal according to any one of claims 1 to 4, wherein the furnace structure has a straight portion; the representative size of the furnace structure is a length of the straight portion; and the real image In the matching between the edge shape and the reference shape of the above-described furnace structure, the length of the straight portion is obtained from an approximate expression obtained by linearly approximating the edge shape of the straight portion.    The method for producing a single crystal according to any one of the first to fourth aspects of the invention, wherein the position of the camera is specified based on a rear distance of the camera that has been grasped beforehand, and the furnace structure is The respective edge shape projections of the real image and the mirror image are converted onto the above reference plane.