TW201821794A - Sensing apparatus and material sensing method - Google Patents

Abstract

A sensing apparatus includes a probe and a sensing module. The sensing module includes a material sensing circuit, an operation unit and a signal output circuit. The sensing module generates a frequency sweep signal and sends the frequency sweep signal to the probe to sense a state of a material. The frequency sweep signal is a plurality of signals having different frequencies from each other in a predetermined frequency range. When the frequency sweep signal touches the material, an equivalent capacitance of the material is utilized to generate a reflected signal. The material sensing circuit receives the reflected signal and sends the reflected signal to the operation unit. The operation unit operates the reflected signal to generate a waveform signal to determine the state of the material. The operation unit utilizes an impedance spectrum to determine the state of the material.

Description

Sensing device and substance sensing method

The invention relates to a sensing device and a substance sensing method, in particular to a sensing device with variable frequency detection and a substance sensing method with variable frequency detection.

The static capacitance/RF admittance sensor is used to detect the change of the capacitance of the substance; based on the capacitance formula C=εA/d, the electrostatic capacitance/RF admittance sensor will sense the information from the physical signal. Transmitted into an electronic signal; when the electrostatic capacitor/RF admittance sensor is installed in a tank or a pipe, the A (substance contact area) and d (plate distance) in the above formula are fixed, so the change of C The amount will be affected by ε (the dielectric constant of the substance).

The static capacitance/RF admittance sensor emits a fixed frequency AC signal to the probe, and then converts the capacitance value into an electrical signal; when the material contacts the probe, a change in the intensity of the signal is generated. The control unit (uC or comparison circuit) of the simple static capacitance/RF admittance sensor will set a judgment point; when the probe does not touch the substance, the signal strength of the return will not exceed this judgment point; When the probe touches the substance, the signal strength of the returned signal will exceed this judgment point.

Furthermore, after installing the static capacitance/RF admittance continuous sensor, the static capacitance/RF admittance continuous sensor performs two-point calibration; input this on the static capacitance/RF admittance continuous sensor The value of the two points, and then the control unit calculates the slope change of the two points; therefore, if the substance changes, the equivalent capacity of the substance in the tank can be calculated according to the change of the signal intensity. The results can then be displayed on the interface of the capacitive/RF admittance continuous sensor, and the signal can be output to the backend system via, for example, the RS-485 interface, 4-20 mA, Modbus interface, and the like.

The following example illustrates the related art method: after the sensor is installed, the material contact probe in the tank is 10 cm, and the volume ratio of the tank is 10%. At this time, the signal intensity is 100 mV; The rod is changed to 50 cm, and the ratio of the contents of the tank is 50%. At this time, the signal intensity is 500 mV. By inputting the above capacity ratio into the sensor, the control unit calculates the relationship between the capacity ratio and the signal strength, that is, (50%-10%)/(500mV-100mV)=0.1 (%⁄mV). Therefore, when the signal intensity changes to 600mV, the capacity ratio in the tank can be directly changed to 60% on the sensor or the output signal.

The dielectric constant of a substance often has a different impedance response due to changes in the environment (eg, temperature or humidity), degradation of material properties (eg, differences in moisture content), and differences in the frequencies emitted by the sensor. However, the related art static capacitance/RF admittance sensor has the disadvantage that the related art electrostatic capacitance/RF admittance sensor cannot operate at different frequencies and can only operate at a fixed frequency, thus limiting Developed into the possibility of intelligent and versatile measurements.

In order to improve the above disadvantages of the prior art, it is an object of the present invention to provide a sensing device.

In order to improve the above disadvantages of the prior art, it is still another object of the present invention to provide a substance sensing method.

In order to achieve the above object of the present invention, the sensing device of the present invention is configured to sense a change state of a dielectric constant of a substance, the device sensing device includes: a probe; and a sensing module, the sense The test module is connected to the probe. The sensing module comprises: a substance sensing circuit; an computing unit electrically connected to the substance sensing circuit; and a signal output circuit, the signal output circuit is electrically connected to the computing unit. The sensing module generates a sweep signal and transmits the sweep signal to the probe to sense a state of the substance; the sweep signal is a complex signal having a frequency different from each other within a preset frequency range; When the swept signal contacts the substance, an equivalent capacitance of the substance is used to generate a reflected signal; the substance sensing circuit receives the reflected signal and transmits the reflected signal to the operation unit; and the operation unit operates the reflected signal To generate a waveform signal to determine the state of the substance. The operation unit uses an impedance spectrum to determine the state of the substance; the impedance spectrum defines a plurality of state regions; each of the state regions has a different output signal; the computing unit applies one of the waveform signals The signal intensity and a distribution frequency are in the impedance spectrum to determine a position of the waveform signal in the state regions, and a conversion is performed according to the method to obtain a substance equivalent volume of the substance and a substance quality and determine the substance The operation unit uses the signal output circuit to output the output signal of the status area of the position to the position of the status signal according to the waveform signal.

In order to achieve the above further object of the present invention, the substance sensing method of the present invention comprises the steps of: preparing a sensing device, wherein the sensing device is configured to measure a state of a substance and have a probe and connect the same a sensing module of the probe; the probe is disposed in the material; an environmental correction is performed on the sensing device; a frequency sweep signal is generated by the sensing module, and the frequency sweep signal is transmitted to the probe Sensing the state of the substance, wherein the sweep signal is a complex signal having a frequency different from each other within a predetermined frequency range; and when the sweep signal contacts the substance, generating an equivalent capacitance of the substance a reflection signal; the sensing module operates on the reflected signal to generate a waveform signal and performs a measurement mode to determine the state of the substance to obtain a measurement result and output to the external output, wherein the measurement mode uses an impedance The spectrum determines the state of the substance, the impedance spectrum defines a plurality of status regions, each of the status regions having a different output signal; the sensing module applies the waveform signal The intensity and a distribution frequency are in the impedance spectrum to determine a position of the waveform signal in the state regions, and a conversion is performed according to which a material equivalent volume of the substance and a substance quality are determined and the state of the substance is determined. And according to the position of the waveform signal in the status areas, the sensing module outputs the output signal of the status area of the position to the outside.

The effect of the present invention is to provide an intelligent sensor with variable frequency detection. In order to further understand the technology, the means and the effect of the present invention in order to achieve the intended purpose, refer to the following detailed description of the invention and the accompanying drawings. The detailed description is to be understood as illustrative and not restrictive.

The technical content and detailed description of the present invention are as follows:

Please refer to FIG. 1, which is a block diagram of an embodiment of a sensing device of the present invention. The sensing device 10 of the present invention is for sensing a change in the permittivity of a substance 20; the substance 20 is placed in a tank 30. The device sensing device 10 includes a probe 102, a sensing module 104, and a plurality of temperature sensing units 120. The sensing module 104 includes a substance sensing circuit 106 , an arithmetic unit 108 , a signal output circuit 110 , and a temperature sensing circuit 116 . The signal output circuit 110 includes a first signal output circuit 122 and a second signal output circuit 124. The components are electrically connected to each other, and the sensing module 104 is connected to the probe 102, and each of the temperature sensing units 120 is disposed on the probe 102 at intervals.

First, the sensing module 104 generates a frequency sweep signal 112 and then transmits the sweep signal 112 to the probe 102 (to sense a state of the substance 20); the sweep signal 112 is A complex signal of mutually different frequencies within a predetermined frequency range. When the frequency sweeping signal 112 is in contact with the substance 20, an equivalent capacitance of the substance 20 is used to generate a reflected signal 114; the substance sensing circuit 106 receives the reflected signal 114 and transmits the reflected signal 114 to the arithmetic unit 108. . The arithmetic unit 108 operates on the reflected signal 114 to generate a waveform signal to determine the state of the substance 20 (described in detail later).

In other words, the first technical feature of the present invention is to provide an intelligent sensor with variable frequency detection, called an impedance spectrum sensor. The measurement principle of the impedance spectrum sensor is that the sensing module 104 transmits an alternating current signal having an adjustable frequency range (ie, the frequency sweeping signal 112, for example, but the invention is not limited to 50 MHz to 200 MHz) to the probe. 102; the signal strength of the alternating signal does not change due to the frequency change, which is a fixed intensity voltage. The structure and circuit of the probe 102 can be equivalent to a fixed equivalent inductance value (Ld), and a fixed equivalent capacitance value (Cd) is formed by the probe 102 contacting the substance 20 (when the probe 102 is When the substance 20 is not in contact, the medium of the probe 102 is air having a dielectric constant of 1).

By the sensing module 104 transmitting the sweep signal 112, the operation unit 108 can plot the LdCd frequency response of the probe 102 in the air and calculate the air (ie, the dielectric constant is 1). The maximum impedance value that occurs at a certain frequency is the resonance point (Fd). When the substance 20 contacts the probe 102, the equivalent capacitance value changes to C1; at this time, the arithmetic unit 108 recalculates that the resonance point is F1.

In the arithmetic unit 108 of the impedance spectrum sensor, a preset value (A1) is written. With the above F1 and A1, the present invention can design a continuous measuring sensor or a point sensor. For example, the present invention is not limited to, in the application of the sensing switch, if F1 is greater than A1, the sensor outputs a signal; if F1 is less than or equal to A1, the sensor does not output a signal. In general, the substance 20 has a dielectric constant greater than 1, so that the equivalent capacitance produced will only increase, so the resonance point will be smaller than the resonance point of the air.

Different substances 20 have different dielectric constants, and the impedance spectrum sensor can accurately measure the difference. For example, but the invention is not limited, the substance 20 is originally sensed as an engine oil, and its dielectric constant is E1. Because of long-term use, the substance 20 is deteriorated or has too many impurities, so that the dielectric constant of the substance 20 is changed to E2; The impedance spectrum sensor can sense the change in the resonance point to calculate that the property of the substance 20 has changed. The impedance spectrum sensor can be, for example, but the invention is not limited to an oil conditioning sensor or a substance deteriorating device.

For another example, the substance 20 is originally sensed as corn kernels, the moisture content of the corn kernels is 20% or more, and the dielectric constant of the corn kernels having a moisture content of 20% to 30% or more by the impedance spectrum sensor is E3; When the sensor senses that the moisture content of the corn kernel is low (for example, less than 15%), the dielectric constant of the corn kernel becomes E4, which can be measured by an impedance spectrum sensor; this application is similar to the moisture content test. The moisture instrument, except in this similar application, the change in the dielectric constant of the substance 20 is due to changes in the environment and time, rather than changes in volume.

Please refer to Figure 1. The temperature sensing circuit 116 is configured to detect an external ambient temperature (the temperature of the sensing module 104) to generate a temperature sensing signal 118 and transmit the temperature sensing signal 118 to the computing unit 108; The operation unit 108 performs a signal compensation on the waveform signal by using the temperature sensing signal 118. That is, in a signal compensation mode, the sensing module 104 generates the temperature sensing signal 118 to perform the signal on the waveform signal. make up.

Moreover, the temperature sensing unit 120 is configured to detect the external ambient temperature (the temperature of the substance 20) and notify the temperature sensing circuit 116 of the external ambient temperature, so that the temperature sensing circuit 116 generates the temperature sense. The signal 118 transmits the temperature sensing signal 118 to the computing unit 108; then, the computing unit 108 uses the temperature sensing signal 118 to perform the signal compensation on the waveform signal; that is, in the signal compensation mode, The sensing module 104 generates the temperature sensing signal 118 to perform the signal compensation on the waveform signal. The above two types of signal compensation can be arranged separately at different times, so they do not interfere with each other.

In other words, the second technical feature of the present invention is signal compensation for temperature; since detecting changes in the external ambient temperature causes a change in the dielectric constant of the substance 20 and a change in characteristics of the semiconductor component on the board and the board, The sensing module 104 needs to perform temperature compensation such that the external ambient temperature change does not affect the accuracy of the sensing module 104. Furthermore, the substance 20 is also fed back to the arithmetic unit 108 by the influence of the temperature change, so that the arithmetic unit 108 can understand the temperature of the substance 20 and compensate for the change of the dielectric constant, so the probe 102 will have The temperature sensing units 120. The second technical feature of the present invention will allow the impedance spectrum sensor to have another sensing capability to achieve an intelligent decision.

Please refer to Figure 1. The arithmetic unit 108 utilizes an impedance spectrum to determine the state of the substance 20; the impedance spectrum defines a plurality of status regions; each of the status regions has a different output signal. The computing unit 108 applies a signal strength of the waveform signal and a distribution frequency to the impedance spectrum to determine a position of the waveform signal in the state regions, and performs a conversion according to the method to obtain a substance equivalent of the substance 20 The volume and the quality of a substance determine the state of the substance 20. According to the position of the waveform signal in the status areas, the operation unit 108 uses the signal output circuit 110 to output the output signal of the status area of the position to the outside. The status areas include a measurement area and a plurality of variation areas; the measurement area is located at a pre-defined intermediate frequency position; and the variation areas are respectively distributed on both sides of the measurement area according to a plurality of preset signal intensity boundaries. The above content is detailed later.

The computing unit 108 drives the first signal output circuit 122 corresponding to the material equivalent volume to output a first signal 126; the computing unit 108 drives the second signal output circuit 124 corresponding to the material quality to output a second signal 128; The output signal includes the first signal 126 and the second signal 128. The signal patterns of the first signal 126 and the second signal 128 include the following three types:

(1) The first signal 126 is an analog signal and the second signal 128 is an analog signal; that is, the first signal 126 and the second signal 128 are analog signals.

(2) The first signal 126 is a digital signal and the second signal 128 is a digital signal; that is, the first signal 126 and the second signal 128 are digital signals.

(3) The first signal 126 is an analog signal and the second signal 128 is a digital signal, or the first signal 126 is a digital signal and the second signal 128 is an analog signal; that is, the first One of the signals 126 and the second signal 128 is an analog signal, and the other is a digital signal.

Please refer to FIG. 2 , which is a flow chart of an embodiment of the material sensing method of the present invention. The substance sensing method of the present invention comprises the following steps:

S02: Preparing a sensing device, wherein the sensing device is configured to measure a state of a substance and has a probe and a sensing module connected to the probe. Next, the substance sensing method of the present invention proceeds to step S04.

S04: The probe is placed in the substance. Next, the substance sensing method of the present invention proceeds to step S06.

S06: Perform an environmental correction on the sensing device. Next, the substance sensing method of the present invention proceeds to step S08.

S08: generating a sweep signal by using the sensing module and transmitting the sweep signal to the probe to sense the state of the substance, wherein the sweep signal is a plurality of frequencies different from each other within a preset frequency range Signal. Next, the substance sensing method of the present invention proceeds to step S10.

S10: When the sweep signal contacts the substance, a reflection signal is generated by using an equivalent capacitance of the substance. Next, the substance sensing method of the present invention proceeds to step S12.

S12: The sensing module operates on the reflected signal to generate a waveform signal and performs a measurement mode to determine the state of the substance to obtain a measurement result and externally output, wherein the measurement mode uses an impedance spectrum Determining the state of the substance, the impedance spectrum defines a plurality of status regions, each of the status regions having a different output signal. Next, the substance sensing method of the present invention proceeds to a step S14.

S14: The sensing module applies a signal strength of the waveform signal and a distribution frequency to the impedance spectrum to determine a position of the waveform signal in the state regions, and performs a conversion according to the method to obtain a substance of the substance. The equivalent volume and the quality of a substance determine the state of the substance. Next, the substance sensing method of the present invention proceeds to step S16.

S16: The sensing module outputs the output signal of the status area of the position to the position of the status area according to the waveform signal.

And the state zones comprise a measurement zone and a plurality of variation zones; the measurement zone is located at a predefined intermediate frequency position; and the variation zones are respectively distributed on both sides of the measurement zone according to a plurality of preset signal intensity boundaries . The present invention sets an operation mode and drives the sensing device to perform a volume measurement of the substance or a substance quality measurement of the substance according to the operation mode, or simultaneously perform volume measurement of the substance and the substance. The quality of the substance is measured. The sensing module generates a first signal for outputting the first signal to output the first signal; the sensing module generates a second signal for the result of the mass measurement to output the external signal. The second signal; the output signal includes the first signal and the second signal.

Please refer to FIG. 3 , which is a flow chart of another embodiment of the material sensing method of the present invention. The substance sensing method of the present invention comprises the following steps:

T02: The sensing device of the present invention is installed. Next, the substance sensing method of the present invention proceeds to step T04.

T04: Correct the environmental parameters. Next, the substance sensing method of the present invention proceeds to step T06.

T06: Sensing the substance and calculating and judging the substance characteristics. Next, the substance sensing method of the present invention proceeds to step T08 or T10.

T08: Physical measurement of the volume of the substance is performed to generate a first signal. Next, the substance sensing method of the present invention proceeds to step T12.

T10: Perform quality measurement of the substance to identify different substance types to generate a second signal. Next, the substance sensing method of the present invention proceeds to step T12.

T12: Operation mode selection. The material sensing method of the present invention can select a single signal output, or a complex signal output of any combination of the first signal and the second signal; and then, the output circuit converts the signal into an existing analog or digital communication interface signal according to an operation mode. The existing analog or digital communication interface is, for example, but the invention is not limited to a Wireless HART interface, an RS-485 interface, a 4-20 mA interface or an IO-Link interface, and the like.

In other words, the third technical feature of the present invention is to provide a judging method for comprehensively considering and judging the change of the dielectric constant of the substance, the change of the temperature, and the change of the volume of the substance to design a judgment formula: Curve(x) = f(T, ε) + I(T, ε, V), where f represents the emission frequency, I represents the feedback signal strength, T represents temperature, ε represents the dielectric constant of the substance, and V represents the volume of the substance.

Please refer to FIG. 4 , which is a waveform diagram of the impedance spectrum of the present invention; please refer to FIG. 5 , which is a schematic diagram of the state regions of the present invention; FIG. 4 includes 7 curves (ie, in 7 different states) The seven waveform signals respectively measured are a first waveform signal 2001, a second waveform signal 2002, a third waveform signal 2003, a fourth waveform signal 2004, a fifth waveform signal 2005, A sixth waveform signal 2006 and a seventh waveform signal 2007; in Figures 4 and 5, the unit of frequency is Hertz, and the unit of intensity is not limited, and may be any unit.

According to the above formula, FIG. 4 and FIG. 5, the impedance spectrum can be divided into five state regions, including one measurement region 1000 and four variation regions, wherein the four variation regions include a first variation region 1001 and a second variation region 1002. a third variation zone 1003 and a fourth variation zone 1004; the measurement zone 1000 is located at a predefined intermediate frequency position; and according to a plurality of preset signal strength boundaries (including a first preset signal strength boundary 3001, a first Two preset signal strength boundaries 3002, a third predetermined signal strength boundary 3003, and a fourth predetermined signal intensity boundary 3004), the variation regions (ie, the first variation region 1001, the second variation region 1002, the The third variation region 1003 and the fourth variation region 1004) are respectively distributed on both sides of the measurement region 1000.

In the measurement area 1000: the temperature is in a preset range; the material dielectric constant is in a preset range; the material volume has a change value; the emission frequency is in a preset range; and the feedback signal strength has a change value. In this mode, it typically belongs to a measurement area of a change in the volume of a previously defined substance.

In other words, a maximum value of the signal strength of the waveform signal is defined as an intensity maximum value; when a frequency of the intensity maximum is between a first frequency and a second frequency (eg, as shown in FIG. 4) The fifth waveform signal 2005, the sixth waveform signal 2006, and the seventh waveform signal 2007), the external ambient temperature is determined to be within a predetermined temperature range, and the dielectric constant of the substance is determined to be a preset a dielectric constant range in which the equivalent volume of the substance is determined to exceed a predetermined volume range, and one of the reflected signals is determined to exceed a predetermined reflection intensity range, wherein the second frequency is greater than the first frequency.

In the first variation region 1001: the temperature exceeds a preset range; the dielectric constant of the substance is lower than a preset range; the volume change of the substance is not obvious, within a certain definition range; the emission frequency is higher than a preset range; the feedback signal strength is higher than the predetermined Predetermined area. In this mode (temperature changes and material changes), it usually belongs to a region where the volume does not change, but the substance has a change in properties (the substance changes to a different substance or the nature of the substance itself).

In other words, when the frequency of the maximum intensity is greater than the second frequency and the maximum value is greater than a first intensity preset value (eg, the first waveform signal 2001 shown in FIG. 4), the external ambient temperature When it is determined that the predetermined temperature range is exceeded, the dielectric constant of the substance is determined to be lower than the predetermined dielectric constant range, and the equivalent volume of the substance is determined to be within the preset volume range, the reflection The signal strength of the signal is determined to be outside the predetermined reflection intensity range, but the substance quality of the substance is determined to be changed.

In the second variation zone 1002: the temperature exceeds a preset range; the dielectric constant of the substance is higher than a preset range; the volume change of the substance is not obvious, within a certain defined range; the emission frequency is lower than a preset range; the feedback signal strength is lower than the predetermined Predetermined area. In this mode (temperature changes and material changes), it usually belongs to a region where the volume does not change, but the substance has a change in properties (the substance changes to a different substance or the nature of the substance itself).

In other words, when the frequency of the maximum intensity is less than the first frequency and the maximum value is not greater than a second intensity preset value (eg, the third waveform signal 2003 shown in FIG. 4), the external environment The temperature is determined to exceed the predetermined temperature range, the dielectric constant of the substance is determined to be higher than the predetermined dielectric constant range, and the substance equivalent volume of the substance is determined to be within the predetermined volume range, The signal strength of the reflected signal is determined to be lower than the predetermined reflection intensity range, but the substance quality of the substance is determined to be changed.

In the third variation zone 1003: the temperature is in a preset range; the dielectric constant of the substance is higher than a preset range; the volume change of the substance is not obvious, within a certain definition range; the emission frequency is lower than a preset range; the feedback signal strength is preset range. In this mode (substance change), it usually belongs to a region where the volume does not change, but the substance has a change in properties (the substance changes to a different substance or the nature of the substance itself).

In other words, when the frequency of the intensity maximum is less than the first frequency and the intensity maximum is greater than the second intensity preset value (eg, the fourth waveform signal 2004 shown in FIG. 4), the external ambient temperature It is determined that the dielectric constant of the substance is determined to be higher than the predetermined dielectric constant range in the predetermined temperature range, and the substance equivalent volume of the substance is determined to be within the predetermined volume range, the reflection The signal strength of the signal is determined to be within the predetermined range of reflected intensity, but the substance quality of the substance is determined to be changed.

In the fourth variation zone 1004: the temperature is in a predetermined range; the dielectric constant of the substance is lower than a predetermined range; the volume change of the substance is not obvious, within a certain definition range; the emission frequency is higher than a preset range; the feedback signal strength is in advance Predetermined area. In this mode (substance change), it usually belongs to a region where the volume does not change, but the substance has a change in properties (the substance changes to a different substance or the nature of the substance itself).

In other words, when the frequency of the maximum intensity is greater than the second frequency and the maximum value is not greater than the first intensity preset value (eg, the second waveform signal 2002 shown in FIG. 4), the external environment The temperature is determined to be within the predetermined temperature range, the dielectric constant of the substance is determined to be lower than the predetermined dielectric constant range, and the substance equivalent volume of the substance is determined to be within the predetermined volume range, The intensity of the signal of the reflected signal is determined to be within the predetermined range of reflected intensity, but the quality of the substance of the substance is determined to be changed.

Therefore, a third technical feature of the present invention is to comprehensively judge the variation of the dielectric constant of the substance, the variation of the temperature of the environment, and the variation of the volume of the substance by the above-described definition of the five regions; the present invention includes at least one Discrimination of the above areas.

Please refer to FIG. 6, which is a conceptual diagram of the present invention. The invention can comprehensively judge the signal intensity variation under the same material, the signal frequency variation under different materials, and the characteristic deviation of the environmental temperature influence. In combination with the above, the frequency sweeping principle of the impedance spectrum sensor, the way the static capacitance/radio admittance type sensor is used to judge the intensity, the probe structure of the continuous sensor, and the compensation circuit considering the influence of the ambient temperature are used. The invention provides a contact type multi-function continuous sensing device which can measure the amount of material in the tank and at the same time judge the quality condition of the substance without being affected by the change of the ambient temperature.

The principle of the impedance spectrum sensor and the static capacitance/RF admittance sensor are to treat the material in the installation environment as an equivalent capacitance value, and the probe of the sensor detects the change of the equivalent capacitance value. The output and the reaction vary depending on the dielectric constant of the substance. If the dielectric constant of the substance is larger, the change is larger. If the dielectric constant of the substance is smaller, the change is smaller. The static capacitance/RF admittance continuous sensor calculates the area of the contact material of the probe to determine the volume of the material in the tank. Whether the quality of the material will change during the measurement requires the installation of other sensing devices for detection, so that it can achieve the effect of monitoring the volume and quality of the material in the tank.

The invention combines the impedance spectrum sensor with the principle of the electrostatic capacitance/radio admittance sensor; the invention senses the feedback signal from the substance by using the adjustable frequency signal and the structural design of the contact type continuous probe The frequency response characteristic analyzes the change of the signal frequency and the signal intensity, and compensates for the circuit and the substance caused by the ambient temperature; the present invention determines the change of the substance in the tank, confirms the quality of the substance, and detects the temperature of the substance, and then displays the result in The user interface of the sensing module or the interface (for example, the invention is not limited to the Wireless HART interface, the RS-485 interface, the 4-20 mA interface or the IO-Link interface, etc.) is output to the central control system.

That is, the present invention utilizes the sensing module to sense the frequency variation and intensity variation of the reflected signal, and by using the compensation of the capacitance ratio of the previously defined substance and the change of the ambient temperature, the double judgment mode is adopted, and the present invention transmits the output circuit and The interface (for example, the invention is not limited to the Wireless HART interface, the RS-485 interface, the 4-20 mA interface or the IO-Link interface, etc.) outputs a judgment result, so that the signal frequency offset curvature and the signal intensity change can be known, This invention calculates the material height (i.e., the volume of matter) and the quality of the material. Furthermore, the present invention can also select single mode measurement (level height) or multiplex mode measurement (material deterioration determination).

However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent changes and modifications made by the scope of the present invention should still be covered by the patent of the present invention. The scope of the scope is intended to protect. The invention may be embodied in various other modifications and changes without departing from the spirit and scope of the inventions. It is intended to fall within the scope of the appended claims. In summary, it is known that the present invention has industrial applicability, novelty and advancement, and the structure of the present invention has not been seen in similar products and public use, and fully complies with the requirements of the invention patent application, and is filed according to the patent law.

10‧‧‧Sensing device

20‧‧‧ substances

30‧‧‧ barrels

102‧‧‧ Probe

104‧‧‧Sensing module

106‧‧‧Material sensing circuit

108‧‧‧ arithmetic unit

110‧‧‧Signal output circuit

112‧‧‧Sweeping signal

114‧‧‧Reflected signal

116‧‧‧Temperature sensing circuit

118‧‧‧temperature sensing signal

120‧‧‧Temperature sensing unit

122‧‧‧First signal output circuit

124‧‧‧second signal output circuit

126‧‧‧ first signal

128‧‧‧second signal

1000‧‧‧Measurement area

1001‧‧‧First Variation Zone

1002‧‧‧Second variant

1003‧‧‧The third variant

1004‧‧‧4th variant

2001‧‧‧First Waveform Signal

2002‧‧‧Second waveform signal

2003‧‧‧ Third Waveform Signal

2004‧‧‧fourth waveform signal

2005‧‧‧ Fifth Waveform Signal

2006‧‧‧ sixth waveform signal

2007‧‧‧ seventh waveform signal

3001‧‧‧First preset signal strength boundary

3002‧‧‧Second preset signal strength boundary

3003‧‧‧ Third preset signal strength boundary

3004‧‧‧Fourth preset signal strength boundary

S02～16‧‧‧Steps

Step T02～12‧‧‧

1 is a block diagram of an embodiment of a sensing device of the present invention.

2 is a flow chart of an embodiment of a material sensing method of the present invention.

3 is a flow chart of another embodiment of a substance sensing method of the present invention.

4 is a waveform diagram of an impedance spectrum of the present invention.

Figure 5 is a schematic illustration of the state zones of the present invention.

Figure 6 is a conceptual diagram of the present invention.

Claims (14)

a sensing device for sensing a change state of a dielectric constant of a substance, the device sensing device comprising: a probe; and a sensing module, the sensing module is connected to the probe, wherein The sensing module comprises: a substance sensing circuit; an arithmetic unit electrically connected to the substance sensing circuit; and a signal output circuit, the signal output circuit is electrically connected to the computing unit, wherein the sensing unit The sensing module generates a sweep signal and transmits the sweep signal to the probe to sense a state of the substance; the sweep signal is a complex signal having a frequency different from each other within a preset frequency range; When the frequency signal contacts the substance, an equivalent capacitance of the substance is used to generate a reflection signal; the substance sensing circuit receives the reflection signal and transmits the reflection signal to the operation unit; and the operation unit operates the reflected signal to generate a waveform signal for determining the state of the substance; wherein the operation unit utilizes an impedance spectrum to determine the state of the substance; the impedance spectrum defines a plurality of state regions; Each of the zones has a different output signal; the computing unit applies a signal strength of the waveform signal and a distribution frequency to the impedance spectrum to determine a position of the waveform signal in the state zones, and performs a Converting to obtain a substance equivalent volume of a substance and a substance quality and determining the state of the substance; according to the waveform signal at the position of the state areas, the arithmetic unit outputs the position to the position by using the signal output circuit The output signal of the status area. The sensing device of claim 1, wherein the state regions comprise a measurement region and a plurality of variation regions; the measurement region is located at a predefined intermediate frequency position; and according to a plurality of preset signal intensity boundaries, The variation regions are respectively distributed on both sides of the measurement area. The sensing device of claim 1, wherein the sensing module further comprises: a temperature sensing circuit electrically connected to the computing unit, wherein the temperature sensing circuit is The temperature sensing signal is generated to transmit the temperature sensing signal to the computing unit; the computing unit uses the temperature sensing signal to perform a signal compensation on the waveform signal. The sensing device of claim 3, wherein the temperature sensing circuit is configured to detect an external ambient temperature to generate the temperature sensing signal. The sensing device of claim 3, further comprising: a plurality of temperature sensing units, each of the temperature sensing units being separately disposed on the probe and electrically connected to the probe The temperature sensing circuit is configured to detect an external ambient temperature. The sensing device of claim 1, wherein the signal output circuit comprises: a first signal output circuit, the first signal output circuit is electrically connected to the operation unit; and a second signal output circuit, The second signal output circuit is electrically connected to the operation unit, wherein the operation unit drives the first signal output circuit corresponding to the material equivalent volume to output a first signal; the operation unit drives the second signal corresponding to the material quality The output circuit outputs a second signal; the output signal includes the first signal and the second signal. The sensing device of claim 6, wherein the first signal is an analog signal and the second signal is an analog signal. The sensing device of claim 6, wherein the first signal is a digital signal and the second signal is a digital signal. The sensing device of claim 6, wherein the first signal is an analog signal and the second signal is a digital signal, or the first signal is a digital signal and the second signal is a Analog signal. The sensing device of claim 7, wherein in a signal compensation mode, the sensing module generates a temperature sensing signal to perform a signal compensation on the waveform signal. A method for sensing a substance, comprising: preparing a sensing device, wherein the sensing device is configured to measure a state of a substance and has a probe and a sensing module connected to the probe; Provided in the material; performing an environmental correction on the sensing device; generating a sweep signal by using the sensing module and transmitting the sweep signal to the probe to sense the state of the substance, wherein the sweep signal a complex signal having a frequency different from each other within a predetermined frequency range; when the swept signal contacts the substance, an equivalent capacitance of the substance is used to generate a reflected signal; and the sensing module operates on the reflected signal Generating a waveform signal and performing a measurement mode to determine the state of the substance to obtain a measurement result and externally outputting, wherein the measurement mode is to determine the state of the substance by using an impedance spectrum, the impedance spectrum is defined a plurality of status areas, each of the status areas having a different output signal; the sensing module applying a signal strength of the waveform signal and a distribution frequency to the impedance spectrum Disconnecting the waveform signal at a position of the state regions, and performing a conversion to obtain a material equivalent volume of the substance and a substance quality and determining the state of the substance; and according to the waveform signal in the states At the location of the zone, the sensing module outputs the output signal of the state zone of the location to the outside. The material sensing method of claim 11, wherein the state regions comprise a measurement area and a plurality of variation regions; the measurement region is located at a pre-defined intermediate frequency position; and the predetermined signal intensity boundary is based on the complex number The variation regions are respectively distributed on both sides of the measurement area. The material sensing method of claim 11, further comprising: setting an operation mode and driving the sensing device to perform a volume measurement of the substance or a mass measurement of the substance according to the operation mode. , or simultaneously measuring the volume of the substance of the substance and the mass of the substance of the substance. The material sensing method of claim 11, wherein the sensing module generates a first signal for one of the volume measurement results to output the first signal; the sensing module One of the results of the quality measurement of the substance produces a second signal for externally outputting the second signal; the output signal includes the first signal and the second signal.