TW201820809A - Wireless communication device and receiver for receiving and processing radio frequency signal based on carrier aggregation mode - Google Patents

Abstract

A wireless communication device includes an amplifier block amplifying a radio frequency (RF) input signal. The amplifier block includes: a first amplification unit and a second amplification unit. The first amplification unit amplifies the RF input signal to generate a first RF amplified signal including a first non-linearity factor and a second RF amplified signal including a second non-linearity factor, and combines the first and second RF amplified signals to generate a third RF amplified signal. The second amplification unit receives and amplifies the third RF amplified signal to output an RF output signal corresponding to the at least one carrier. In addition, a receiver for receiving and processing an RF input signal based on a carrier aggregation mode is also provided.

Description

Wireless communication device and receiver for receiving and processing radio frequency signals based on carrier aggregation mode

The present invention relates to a wireless communication device supporting carrier aggregation, and more particularly to a receiver for receiving a broadband radio frequency (RF) signal and a wireless communication device including the same.

The wireless communication device can modulate the radio frequency signal after placing the data on the predetermined carrier, amplify the modulated radio frequency signal, and transmit the amplified radio frequency signal to the wireless communication network. Additionally, the wireless communication device can receive the radio frequency signal from the wireless communication network and amplify the radio frequency signal and demodulate the radio frequency signal. In order to transmit/receive more data, the wireless communication device can support carrier aggregation (CA) (ie, transmitting radio frequency signals modulated by performing multi-carrier modulation (MCM)/ receive). However, if the deterioration of the noise characteristics or the gain characteristics cannot be prevented, the wireless communication device may not be able to effectively support carrier aggregation.

At least one embodiment of the present invention provides a receiver capable of improving the gain characteristics of a wireless communication device supporting carrier aggregation (CA) and a wireless communication device including the same.

In accordance with an exemplary embodiment of the present invention, a wireless communication device is provided, the wireless communication device comprising: an amplifier block configured to receive a radio frequency (RF) input signal transmitted using at least one carrier and to amplify the radio frequency input Signal to generate at least one radio frequency output signal. The amplifier block includes a first amplifying unit configured to amplify the radio frequency input signal to generate a first radio frequency amplified signal including a first non-linearity factor and a second including a second non-linearity factor A radio frequency amplifies the signal and combines the first radio frequency amplified signal with the second radio frequency amplified signal to generate a third radio frequency amplified signal; and a second amplifying unit configured to receive the third radio Frequency amplifying the signal and amplifying the third radio frequency amplified signal to generate a radio frequency output signal corresponding to the at least one carrier.

In accordance with an exemplary embodiment of the present invention, a receiver is provided that receives a radio frequency input signal and processes the radio frequency input signal based on a carrier aggregation (CA) mode. The receiver includes a plurality of amplifier blocks. Each of the plurality of amplifier blocks includes a first amplification unit and a second amplification unit. The first amplifying unit includes at least two input amplifiers having different properties from each other such that nonlinearity factors generated when the radio frequency input signal is amplified are different from each other. The first amplifying unit is configured to perform a first cancellation of the non-linearity factor and amplify the radio frequency input signal into a radio frequency amplified signal using the at least two input amplifiers. The second amplifying unit includes a plurality of amplifying circuits each including at least one amplifier configured to receive the radio frequency amplifying signal and amplify the radio frequency amplifying signal to output A radio frequency output signal corresponding to a predetermined carrier.

In accordance with an exemplary embodiment of the present invention, a method of operating a wireless communication device that supports carrier aggregation is provided. The method includes amplifying a radio frequency input signal generated from a radio frequency (RF) signal into a first radio frequency amplifying signal and a second radio frequency amplifying signal, the radio frequency signal being transmitted using at least one carrier, the A radio frequency amplified signal includes a first non-linearity factor, the second radio frequency amplified signal includes a second non-linearity factor, the second non-linearity factor having a different sign than the first non-linearity factor a third radio frequency amplified signal by adding the first radio frequency amplified signal to the second radio frequency amplified signal; generating and the at least one by amplifying the third radio frequency amplified signal a radio frequency output signal corresponding to the carrier; and generating a baseband signal by downconverting the radio frequency output signal.

According to an exemplary embodiment of the present invention, a wireless communication device is provided, the wireless communication device including a first amplifier, a second amplifier, and a third amplifier. The first amplifier includes a first complementary transistor having a first width. The first amplifier is configured to amplify an input radio frequency (RF) signal to generate a first amplified radio frequency signal, the input radio frequency signal being transmitted using at least one carrier. The second amplifier includes a non-complementary transistor having a second width that is different from the first width. The second amplifier is configured to amplify the input radio frequency signal to produce a second amplified radio frequency signal. The third amplifier includes a second complementary transistor configured to receive the first amplified radio frequency signal and the second amplified radio frequency signal and output a third radio frequency amplified signal.

The above described features and advantages of the invention will be apparent from the following description.

1 is a diagram of a wireless communication device 100 that performs wireless communication operations and a wireless communication system 10 that includes a wireless communication device 100.

Referring to FIG. 1, the wireless communication system 10 may be a long term evolution (LTE) system, a code division multiple access (CDMA) system, a global system for mobile communication (GSM), and One of the wireless local area network (WLAN) systems. The code division multiple access system can have various implementation forms, such as wideband CDMA (WCDMA), time-division synchronized CDMA (TD-SCDMA), cdma2000, and the like.

The wireless communication system 10 includes at least two base stations 110 and 112, and a system controller 120. However, the inventive concept is not limited to this. For example, wireless communication system 10 can include at least two base stations and a plurality of network entities. The wireless communication device 100 may be referred to as a user equipment (UE), a mobile station (MS), a mobile terminal (MT), a user terminal (UT), and a subscriber station (subscribe). Station, SS), portable device, etc. Base stations 110 and 112 may represent fixed stations that communicate with wireless communication device 100 and/or other base stations to transmit and receive data signals and/or control information. The base stations 110 and 112 may be referred to as a Node B, an evolved Node B (eNB), a base transceiver system (BTS), an access point (AP), and the like, respectively.

The wireless communication device 100 can communicate with the wireless communication system 10 and can receive signals from the broadcast station 114. In addition, the wireless communication device 100 can receive signals from a global navigation satellite system (GNSS) or a global positioning system (GPS) satellite 130. The wireless communication device 100 can support radio technologies for wireless communication (e.g., long term evolution, cdma2000, wideband code division multiple access, time division synchronous code division multiple access, global mobile communication systems, 802.11, etc.).

In an embodiment, the wireless communication device 100 supports carrier aggregation for performing transmission/reception operations using multiple carriers. The wireless communication device 100 can perform wireless communication with the wireless communication system 10 in a low frequency band, a medium frequency band, and a high frequency band. The low band, the medium band, and the high band may be referred to as band groups, respectively, and each band group may include a plurality of bands. Carrier aggregation (hereinafter referred to as "CA") can be classified into in-band carrier aggregation and inter-band carrier aggregation. In-band carrier aggregation means performing wireless communication operations using multiple carriers within a frequency band, and inter-band carrier aggregation means performing wireless communication operations using multiple carriers in different frequency bands.

The wireless communication device 100 according to an embodiment of the present invention may perform both in-band carrier aggregation and inter-band carrier aggregation, and in addition, wireless communication operations may be performed using one carrier instead of carrier aggregation (ie, instead of multiple carriers). The input impedance of the receiver included in the wireless communication device 100 for receiving radio frequency (RF) signals from the wireless communication system 10 can be maintained constant during operation of in-band carrier aggregation and operation of inter-band carrier aggregation. In an embodiment, the wireless communication device 100 receives the radio frequency signal and then amplifies the radio frequency signal and simultaneously cancels the non-linearity factor to improve the gain characteristics. Therefore, the signal receiving sensitivity of the wireless communication device 100 can be improved, thereby improving the reliability of the wireless communication operation of the wireless communication device 100.

2A to 2F are diagrams regarding a technique of carrier aggregation.

2A is a diagram showing continuous in-band carrier aggregation. Referring to FIG. 2A, the wireless communication device 100 of FIG. 1 performs transmission/reception of signals using four consecutive carriers within the same frequency band of the low frequency band. In an embodiment, when there is no space between any two of a set of carriers, the set of carriers is considered to be contiguous.

2B is a diagram schematically showing discontinuous in-band carrier aggregation. Referring to FIG. 2B, the wireless communication device 100 performs transmission/reception of signals using four discontinuous carriers within the same frequency band of the low frequency band. In an embodiment, when there is space between at least two of a set of carriers, the set of carriers is considered to be discontinuous. The carriers may be spaced apart from each other by, for example, 5 MHz, 10 MHz, or another amount.

2C is a diagram schematically showing inter-band carrier aggregation in the same band group. Referring to FIG. 2C, the wireless communication device 100 performs transmission/reception of signals using four of the two frequency bands included in the same frequency band group.

2D is a diagram schematically showing inter-band carrier aggregation in different frequency band groups. Referring to FIG. 2D, the wireless communication device 100 performs transmission/reception of signals using four carriers included in different frequency band groups. In detail, two carriers are in a frequency band included in the low frequency band, and the other two carriers are in a frequency band included in the intermediate frequency band.

Please note that the present invention is not limited to the exemplary aggregated carriers shown in Figures 2A-2D. For example, the wireless communication device 100 can support various combinations of aggregated carriers for a frequency band or group of frequency bands.

Referring to Figure 2E, a composite carrier technique is presented that operates by combining multiple frequency bands in one or more base stations to meet the requirements for higher bit rates. The long-term evolution network, which is a kind of mobile network, can achieve data transmission speed of 100 Mbps, and thus can transmit/receive large-capacity video in a wireless communication environment. 2E shows an example in which five frequency bands of a long-term evolution criterion are combined according to a carrier aggregation technique, which is capable of increasing data transmission speed by five times. In Figure 2E, each of the carriers (Carrier 1 to Carrier 5) is defined in the long term evolution, and in the long term evolution criteria, one frequency bandwidth is defined at a maximum of 20 MHz. Therefore, the wireless communication device 100 according to the embodiment can increase the data rate to a bandwidth of 100 MHz.

FIG. 2E shows an example in which only carriers defined by long-term evolution are combined, but the inventive concept is not limited thereto. As shown in Figure 2F, the carriers of different wireless communication networks can be combined. Referring to FIG. 2F, when frequency bands are combined according to carrier aggregation techniques, a third generation (3rd-generation, 3G) standard can also be combined with a frequency band of a wireless fidelity (Wi-fi) standard. As described above, the long-term evolution A employs a carrier aggregation technique, and therefore, data transmission can be performed at a faster speed.

3 is a block diagram of another example of the wireless communication device 100 of FIG. 1.

Referring to FIG. 3, the wireless communication device 200 includes a transceiver 220 coupled to the primary antenna 210, a transceiver 250 coupled to the secondary antenna 212, and a data processor (or controller) 280. The transceiver 220 can include a plurality of receivers 230a through 230k and a plurality of transmitters 240a through 240k. The transceiver 250 can include a plurality of receivers 260a through 260l and a plurality of transmitters 270a through 270l. The transceivers 220 and 250 having the above structure can support multiple frequency bands, multiple radio technologies, carrier aggregation, receiving diversity, and multiple input multiple output between multiple transmit antennas and multiple receive antennas (multiple-input) Multiple-out, MIMO).

In an embodiment, the first receiver 230a includes a low noise amplifier (LNA) 224a and a receiving circuit 225a. The structure of the first receiver 230a can be applied to other receivers 230b to 230k, and 260a to 260l. Hereinafter, the structure of the first receiver 230a will be explained below. To receive the data, the primary antenna 210 can receive radio frequency signals from the base station and/or the transmitter station. In an embodiment, primary antenna 210 generates a radio frequency input signal by performing frequency filtering on the received radio frequency signal and routes the filtered radio frequency input signal through antenna interface circuit 222 to the selected receiver. The antenna interface circuit 222 can include a switching device, a duplexer, a filter circuit, and an input matching circuit. The low noise amplifier 224a amplifies the filtered radio frequency input signal to produce a radio frequency output signal and provides the radio frequency output signal to the data processor 280. Data processor 280 can store the data in memory 282 based on the radio frequency output signal.

The low noise amplifier 224a according to an embodiment of the inventive concept constantly maintains the input impedance as the target impedance during communication operations that are aggregated according to various carriers. In addition, when the radio frequency input signal is amplified, the non-linearity factor that may occur during amplification can be cancelled to improve gain characteristics and noise characteristics during amplification. In an embodiment, the low noise amplifier 224a sequentially amplifies the radio frequency input signal by at least two times to produce a radio frequency output signal, and may sequentially cancel the non-linearity factor generated during at least two times of amplification. A detailed description will be provided thereafter.

In an embodiment, receive circuit 225a downconverts the radio frequency output signal received from low noise amplifier 224a from the radio frequency to baseband to generate a baseband signal. In other embodiments, the receiving circuit 225a may be referred to as an output circuit. In an embodiment, receive circuitry 225a amplifies and filters the baseband signal and provides the amplified and filtered baseband signal to data processor 280. Data processor 280 can store the data in memory 282 based on the amplified and filtered baseband signals. The receiving circuit 225a may include at least one of a mixer, a filter, an amplifier, an oscillator, a local oscillator generator, a phase locked loop (PLL) circuit, and the like.

In an embodiment, the first transmitter 240a includes a power amplifier (PA) 226a and a transmit circuit 227a. The structure of the first transmitter 240a can be applied to other transmitters 240b to 240k, and 270a to 270l. Hereinafter, the structure of the first emitter 240a will be explained below. When transmitting data, data processor 280 can process the data to be transmitted (eg, data encoding and data modulation) and can provide an analog output signal to the selected transmitter. For example, data processor 280 can process the digital data into analog data for storage in memory 282.

In an embodiment, transmit circuitry 257a upconverts the analog output signal from baseband to radio frequency and amplifies and filters the analog output signal to produce a modulated radio frequency signal. In an embodiment, upconversion of the analog output signal results in a modulated radio frequency signal having a higher frequency than the analog output signal. Transmit circuitry 257a may include at least one of an amplifier, a filter, a mixer, an input matching circuit, an oscillator, a local oscillator (LO), a phase locked loop circuit, and the like. In an embodiment, power amplifier 226a receives and amplifies the modulated radio frequency signal and provides a primary radio 210 with a transmit radio frequency signal having an appropriate output power level via antenna interface circuit 222. The modulated radio frequency signal can be transmitted to the base station via the primary antenna 210.

All or one of the transceiver 220 and the transceiver 250 can be implemented as an analog integrated circuit, a radio frequency integrated circuit, or a mixed signal integrated circuit. For example, the low noise amplifiers 224a through 224k and 254a through 254l, and the receiving circuits 225a through 225k and 255a through 255l can be implemented as a module (eg, a radio frequency integrated circuit). However, the inventive concept is not limited to this. For example, the circuit configurations of transceivers 220 and 250 can be implemented in a variety of different manners.

FIG. 4 is a block diagram of a receiver 400 in accordance with an exemplary embodiment of the inventive concept. Receiver 400 can be used to implement one or more of receivers 230a through 230k and/or receivers 260a through 260l shown in FIG.

Referring to FIG. 4, the receiver 400 includes a carrier aggregation low noise amplifier 440, an antenna 410, an antenna interface circuit 420, an input matching circuit 430, and a plurality of output circuits 450_1 to 450_M supporting non-carrier aggregation and in-band carrier aggregation. The carrier aggregation low noise amplifier 440 can operate on the output of at least one of the low noise amplifiers 224a through 224k and 254a through 254l shown in FIG. The carrier aggregation low noise amplifier 440 can include a single input and multiple (M) outputs. For example, carrier aggregation low noise amplifier 440 can receive an input radio frequency signal from a single input and output a plurality of radio frequency signals via a plurality of outputs based on the input radio frequency signal. Receiver 400 can receive an input radio frequency signal (or downlink signal) transmitted by at least one carrier via antenna 410. Antenna 410 can provide the received radio frequency signal to antenna interface circuit 420. In an embodiment, antenna interface circuit 420 performs frequency filtering and routes the received radio frequency signals to provide receiver input signal RX _IN to input matching circuit 430. Input matching circuit 430 can provide radio frequency input signal RF _IN to carrier aggregation low noise amplifier 440 by impedance matching. Input matching circuit 430 can perform impedance matching between carrier aggregation low noise amplifier 440 and antenna interface circuit 420 or antenna 410. Input matching circuit 430 can be included in antenna interface circuit 420.

The carrier aggregation low noise amplifier 440 amplifies the radio frequency input signal RF _IN in a carrier aggregation form using one carrier or in a non-carrier aggregation form to output a radio frequency output signal via a low noise amplifier output, or to include M The in-band carrier aggregation form of the carrier amplifies the radio frequency input signal RF _IN to output M radio frequency output signals RF _OUT1 through RF _OUTM via M low noise amplifier outputs, where M is greater than one. In an embodiment, the carrier aggregation low noise amplifier 440 receives the mode control signal XMOD from an external source and operates in one of a single output mode or a multiple output mode based on the value or level of the mode control signal XMOD. In the single output mode, the carrier 440 to run the polymerization LNA to configure an input and an output and receiving a radio frequency input signal RF _IN, RF _IN radio frequency input signal comprising at least one signal transmitted via a carrier. The single output mode can be used to receive signals transmitted over one carrier instead of using carrier aggregation. In the multiple output mode, the carrier aggregation low noise amplifier 440 operates in a configuration of one input and M outputs, and receives a radio frequency input signal RF _IN including signals transmitted through a plurality of carriers and respectively to the M output circuits 450_1 to 450_M outputs M radio frequency output signals RF _OUT1 to RF _OUTM . A radio frequency output signal can correspond to one carrier. In an embodiment, at least one of the output circuits 450_1 to 450_M receives the radio frequency output signal and downconverts the radio frequency output signal to output the radio frequency output signal as a baseband signal. In an embodiment, the downconversion converts the radio frequency output signal to a lower frequency signal. The output circuits 450_1 to 450_M may correspond to the receiving circuits 225 and 255 shown in FIG.

5A and 5B are block diagrams of a low noise amplifier 440 and an output circuit 450 of the receiver 400 of FIG. 4, in accordance with an exemplary embodiment.

Referring to FIG. 5A, the receiver 400 includes a carrier aggregation low noise amplifier 440 and the plurality of output circuits 450_1 to 450_M. The carrier aggregation low noise amplifier 440 includes at least one amplifier block AMPB. The amplifier block AMPB includes a first amplifying unit 442 and a second amplifying unit 446. The first amplifying unit 442 includes an amplifying circuit 443 that amplifies the radio frequency input signal RF _IN and can cancel the nonlinearity factor generated during the amplification. The second amplifying unit 446 is connected to the first amplifying unit 442 via the output node X of the first amplifying unit 442, and receives the amplified radio frequency input signal from the first amplifying unit 442. The second amplification unit 446 includes a plurality of amplification circuits 446_1 to 446_M, and each of the amplification circuits 446_1 to 446_M may receive the enable/disable control signal EN/DIS_CS to control activation and deactivation. For example, when receiving radio frequency signals transmitted in the form of in-band carrier aggregation using G (where G is an integer smaller than M) carriers, G amplification circuits may be selected and enabled from the amplification circuits 446_1 to 446_M, and The enabled amplifying circuit can output a radio frequency output signal separately. For example, when G is less than the total number of available amplifying circuits, the remaining amplifying circuits can be disabled to save power. When it is assumed that a radio frequency signal transmitted using M carriers in the form of in-band carrier aggregation is received, each of the amplifying circuits 446_1 to 446_M may amplify the radio frequency input signal and cancel the nonlinearity factor generated during amplification to Output radio frequency output signals RF _OUT1 to RF _OUTM .

As described above, the carrier aggregation low noise amplifier 440 according to the present invention can cancel the nonlinearity factor generated when the predetermined signal is amplified to improve the gain characteristic whose linearity is valued. In addition, the second amplifying unit 446 receives the amplified radio frequency input signal from the first amplifying unit 442 and amplifies the received radio frequency input signal again, and thus, can consume less direct current (DC). The radio frequency output signal having the desired magnitude is simultaneously outputted by the current.

The output circuits 450_1 to 450_M respectively include load circuits 451_1, 451_2, ..., 451_M connected to the amplification circuits 446_1 to 446_M of the second amplification unit 446, and down converter circuits 452_1 to 452_M. In an embodiment, the load circuits 451_1 to 451_M are baseband filters. The first downconverter circuit 452_1 includes two mixers 453_1 and 454_1, and baseband filters 455_1 and 456_1. The structure of the first down converter circuit 452_1 can be applied to other down converter circuits 452_2 to 452_M. For example, the second downconverter circuit 452_2 includes two mixers 453_2 and 454_2, and baseband filters 455_2 and 456_2, and the Mth down converter circuit 452_M includes mixers 453_M and 454_M, and a baseband filter 455_M. And 456_M. When it is assumed that a radio frequency signal transmitted using M carriers in the form of in-band carrier aggregation is received, the output circuits 450_1 to 450_M may respectively convert the radio frequency output signals RF _OUT1 to RF _OUTM into baseband signals XBAS _OUT1 to XBAS _OUTM . The mixers 453_1, 453_2, ..., 453_M can receive the in-phase local oscillator signal ILO1, and the mixers 454_1, 454_2, ... 454_M can receive the quadrature local oscillator signal QLO1.

Referring to Figure 5B, differs from the example shown in FIG. 5A, the receiver 400 'further includes a switch unit 444', a switch unit 444 'includes a plurality of switching means _{SW 1, SW 2, ...,} SW M. Therefore, when receiving a radio frequency signal transmitted by N carriers in the form of in-band carrier aggregation, the switching unit 444' can be controlled by the switch control signal SWCS such that N amplification circuits are selected from the amplification circuits 446_1' to 446_M' . However, embodiments of the inventive concept are not limited to the structure of the receiver 400 shown in FIG. 5A and the receiver 400' shown in FIG. 5B.

FIG. 6 is a block diagram of a receiver 500 in accordance with an exemplary embodiment of the present invention. Receiver 500 can be used to implement one or more of receivers 230a through 230k and/or receivers 260a through 260l shown in FIG.

Referring to FIG. 6, the receiver 500 includes a multiple input multiple output low noise amplifier 540 supporting non-carrier aggregation, in-band carrier aggregation, and inter-band carrier aggregation, an antenna 510, an antenna interface circuit 520, an input matching circuit, and a plurality of outputs. Circuits 550_1 through 550_M. The input matching circuit may include first to Nth input matching circuits 530_1 to 530_N. The multi-input multi-output low noise amplifier 540 can operate on the output of one of the low noise amplifiers 224 and 254 shown in FIG. The multiple input multiple output low noise amplifier 540 can include multiple (N) inputs and multiple (M) outputs. Receiver 500 can receive radio frequency signals (or downlink signals) transmitted from multiple carriers or one carrier within the same frequency band or different frequency bands via antenna 510. Antenna 510 can provide the received radio frequency signal to antenna interface circuit 520. The antenna interface circuit 520 can perform frequency filtering on the received radio frequency signals. As an example, antenna interface circuit 520 filters the radio frequency signal to produce a first receiver input signal RX _IN1 that is transmitted using a carrier in the first frequency band. Additionally, the antenna interface circuit 520 filters the radio frequency signal to produce an Nth receiver input signal RX _INN that is transmitted using a carrier in the Nth frequency band. The antenna interface circuit 520 can generate one to N receiver input signals RX _IN1 through RX _INN and can be routed to provide receiver input signals to the input matching circuits 530_1 through 530_N. The input matching circuits 530_1 to 530_N can provide one to N radio frequency input signals RF _IN1 to RF _INN applied to the multiple input multiple output low noise amplifier 540 by performing an impedance matching operation.

The multi-input multi-output low noise amplifier 540 can receive one to N radio frequency input signals RF _IN1 to RF _INN . For example, the multiple input multiple output low noise amplifier 540 can amplify a radio frequency input signal transmitted from non-carrier aggregation or in-band carrier aggregation into N radio frequency input signals transmitted from inter-band carrier aggregation. The multiple input multiple output low noise amplifier 540 can amplify the receivable one to N radio frequency input signals RF _IN1 to RF _INN to output the radio frequency output signals RF _OUT1 to RF _OUTM to the output circuits 550_1 to 550_M, respectively.

In an embodiment, the multiple input multiple output low noise amplifier 540 receives the mode control signal XMOD from an external source and is in a single output mode, an in-band carrier aggregation mode, and an inter-band carrier based on the value or level of the mode control signal XMOD. One mode in the aggregation mode runs. In single output mode, the multiple input multiple output low noise amplifier 540 operates in one input and one output configuration. Additionally, the multiple input multiple output low noise amplifier 540 can receive a radio frequency input signal including at least one signal transmitted through one carrier and amplify the radio frequency input signal to output a radio frequency output signal. In the in-band carrier aggregation mode, the multiple input multiple output low noise amplifier 540 operates in an input and M output configuration, where M is greater than one. In addition, the multi-input multi-output low noise amplifier 540 can receive a radio frequency input signal including a plurality of transmissions transmitted through a plurality of carriers in the same frequency band, and can output one to M radios to the M output circuits 550_1 to 550_M, respectively. Frequency output signals RF _OUT1 to RF _OUTM . A radio frequency output signal can correspond to one carrier. In the inter-band carrier aggregation mode, the multiple input multiple output low noise amplifier 540 operates in a configuration of N inputs and M outputs, where N and M are greater than one. In addition, the multi-input multi-output low noise amplifier 540 can receive a radio frequency input signal including a plurality of transmissions transmitted through one to M carriers of one to N different frequency bands, and can respectively output the M output circuits 550_1 to 550_M Output radio frequency output signals RF _OUT1 to RF _OUTM . At least one of the output circuits 550_1 through 550_M may receive the radio frequency output signal and downconvert the radio frequency output signal to output the radio frequency output signal as a baseband signal.

Figure 7A is a block diagram of the receiver 500 of Figure 6 in accordance with an exemplary embodiment, Figure 7B is a block diagram illustrating operation of the receiver in the form of inter-band carrier aggregation, and Figure 7C is a diagram illustrating the receiver with in-band carrier A block diagram of the operations performed in aggregated form.

Referring to FIG. 7A, the receiver 500 includes a multiple input multiple output low noise amplifier 540 and a plurality of output circuits 550_1 through 550_M. The multiple input multiple output low noise amplifier 540 includes a plurality of amplifier blocks AMPB_1 through AMPB_N. The plurality of amplifier blocks AMPB_1 to AMPB_N receive the radio frequency input signals RF _IN1 to RF _INN , respectively, and amplify the radio frequency input signals RF _IN1 to RF _INN to generate radio frequency output signals RF _OUT1 to RF _OUTM and are _outputtable Radio frequency output signals RF _OUT1 to RF _OUTM . The plurality of amplifier blocks AMPB_1 to AMPB_N are connected to the output circuits 550_1 to 550_M. For example, the first amplifier block AMPB_1 may be connected to the M output circuits 550_1 to 550_M, and the other amplifier blocks AMPB_2 to AMPB_M may be connected to the M output circuits 550_1 to 550M, respectively. The first output circuit 550_1 may include a load circuit 551_1 and a down converter circuit 552_1. The structure of the first output circuit 550_1 can be applied to other output circuits 550_M. For example, the Mth output circuit 550_M may include an Mth load circuit 551_M and an Mth down converter circuit 552_M. The output circuits 550_1 to 550_M may respectively receive one of the radio frequency output signals RF _OUT1 to RF _{OUTM and downconvert} the one of the radio frequency output signals RF _OUT1 to RF _OUTM to output the baseband signals XBAS _OUT1 to XBAS _OUTM .

FIG. 7B is a diagram illustrating the operation of the receiver 500 in the form of inter-band carrier aggregation. Referring to FIG. 7B, the receiver 500 includes a multiple input multiple output low noise amplifier 540 and first to fifth output circuits 550_1, 550_2, 550_3, 550_4, and 550_5, and the multiple input multiple output low noise amplifier 540 includes the first The amplifier blocks to the eighth amplifier blocks AMPB_1, AMPB_2, AMPB_3, AMPB_4, AMPB_5, AMPB_6, AMPB_7, and AMPB_8. The first output circuit 550_1 includes a first load circuit 551_1 and a first down converter circuit 552_1, the second output circuit 550_2 includes a second load circuit 551_2 and a second down converter circuit 552_2, and the third output circuit 550_3 includes a third load circuit. 551_3 and the third down converter circuit 552_3, the fourth output circuit 550_4 includes a fourth load circuit 551_4 and a fourth down converter circuit 552_4, and the fifth output circuit 550_5 includes a fifth load circuit 551_5 and a fifth down converter circuit 552_5. . Hereinafter, a case will be explained in which the base station transmits the radio frequency signal using the first carrier ω1 of the first frequency band, the second carrier ω2 of the third frequency band, and the third carrier ω3 of the fifth frequency band.

First, some of the amplifier blocks AMPB_1 to AMPB_8 (AMPB_1, AMPB_3, and AMPB_5) are enabled, and the enabled amplifier blocks AMPB_1, AMPB_3, and AMPB_5 respectively receive the first carrier ω1 to the third carrier ω3. The first radio frequency input signal RF _IN1 to the third radio frequency input signal RF _IN3 . The first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during amplification, and may output the first radio frequency output signal RF _OUT1 to the enabled first output circuit 550_1. The third amplifier block AMPB_3 amplifies the second radio frequency input signal RF _IN2 and cancels the non-linearity factor generated during amplification, and may output the second radio frequency output signal RF _OUT2 to the enabled second output circuit 550_2. In addition, the fifth amplifier block AMPB_5 amplifies the third radio frequency input signal RF _IN3 and cancels the nonlinearity factor generated during the amplification, and may output the third radio frequency output signal RF _OUT3 to the enabled third output circuit 550_3. . The enabled output circuits 550_1 to 550_3 can output baseband signals XBAS _OUT1 to XBAS _OUT3 corresponding to the carriers ω1 to ω3.

Figure 7C is a diagram illustrating the operation of receiver 500 in the form of in-band carrier aggregation. Referring to FIG. 7C, the receiver 500 includes a multiple input multiple output low noise amplifier 540 and first output circuits 550_1 through 550_5, and the multiple input multiple output low noise amplifier 540 includes first amplifier blocks AMPB_1 through eighth. Amplifier block AMPB_8. Hereinafter, a case will be explained in which the base station transmits the radio frequency signal using the first carrier ω1, the second carrier ω2, and the third carrier ω3 of the same frequency band.

First, the first amplifier block AMPB_1 is enabled from the amplifier blocks AMPB_1 to AMPB_8, and the enabled amplifier block AMPB_1 receives the first radio frequency input signal RF _IN1 corresponding to the first carrier ω1 to the third carrier ω3. The first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the non-linearity factor generated during the amplification, and outputs the first radio frequency corresponding to the first carrier ω1 to the enabled first output circuit 550_1. Output signal RF _OUT1 . In addition, the first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the nonlinearity factor generated during the amplification, and outputs a second corresponding to the second carrier ω2 to the enabled second output circuit 550_2. Radio frequency output signal RF _OUT2 . Finally, the first amplifier block AMPB_1 amplifies the first radio frequency input signal RF _IN1 and cancels the nonlinearity factor generated during the amplification, and outputs a third corresponding to the third carrier ω3 to the enabled third output circuit 550_3. Radio frequency output signal RF _OUT3 . The enabled output circuits 550_1 to 550_3 can output baseband signals XBAS _OUT1 to XBAS _OUT3 corresponding to the carriers ω1 to ω3. Hereinafter, features of the detailed structure of an amplifier block according to an embodiment of the inventive concept will be explained below.

8A and 8B are block diagrams of the first amplifying unit 442 shown in Fig. 5A, according to an exemplary embodiment of the present invention.

Referring to FIG. 8A, the first amplifying unit 442A includes a first input amplifier 442_1A and a second input amplifier 442_2A. The first input amplifier 442_1A and the second input amplifier 442_2A may be connected in parallel to each other. That is, the input terminal of the first input amplifier 442_1A and the input terminal of the second input amplifier 442_2A are connected through the Y node, and the output terminal of the first input amplifier 442_1A and the output terminal of the second input amplifier 442_2A are connected through the X node.

The first input amplifier 442_1A receives the radio frequency input signal RF _IN and amplifies the radio frequency input signal RF _IN to generate a first radio frequency amplification signal RF _{IN_B1} including a first non-linearity factor _NLF1 . The second input amplifier 442_2A receives the radio frequency input signal RF _IN and amplifies the radio frequency input signal to generate a second radio frequency amplification signal RF _{IN_B2} including the second non-linearity factor _NLF2 . The non-linearity factor may be a signal that is generated when the signal is amplified by a predetermined amplifier, and the non-linearity factor may include at least one of a linearity factor that would interfere with the amplifier. As an example, when the amplifier includes a transistor, the signal produced by the coefficients associated with the transconductance of the transistor may correspond to a non-linearity factor.

As an example, the characteristics of the first input amplifier 442_1A and the characteristics of the second input amplifier 442_2A are set differently from each other, and thus, the sign of the first nonlinearity factor NLF1 generated by the first input amplifier 442_1A is different from that of the second input amplifier. The symbol of the second nonlinearity factor NLF2 generated by 442_2A. For example, when the first non-linearity factor NLF1 has a positive sign, the second non-linearity factor NLF2 has a negative sign. The first radio frequency amplifying signal RF _{IN_B1} and the second radio frequency amplifying signal RF _{IN_B2} may be combined at the X node and output as the third radio frequency amplifying signal RF _{IN_B3} . Here, since the sign of the first nonlinearity factor NLF1 and the sign of the second nonlinearity factor NLF2 are different from each other, the first nonlinearity factor NLF1 and the second nonlinearity factor NLF2 may cancel each other. The cancellation of the nonlinearity factor in the first amplifying unit 442A may be referred to as a first cancellation. Therefore, the third radio frequency amplification signal RF _{IN_B3} may include a third non-linearity factor NLF3 which is a result of cancellation between the first non-linearity factor NLF1 and the second non-linearity factor NLF2.

Referring to FIG. 8B, when compared with the configuration of the first amplifying unit 442A shown in FIG. 8A, the first amplifying unit 442B may further include a feedback circuit 442_3B. The feedback circuit 442_3B can be connected in parallel to the first input amplifier 442_1B and the second input amplifier 442_2B. That is, the feedback circuit 442_3B can be connected between the X node and the Y node. Since the first amplifying unit 442B includes the feedback circuit 442_3B, the input impedance Z _{IN of the} first amplifying unit 442B can be constantly maintained at a predetermined value. In an embodiment, the feedback circuit 442_3B is configured to cause the input impedance Z _{IN of} the first amplification unit 442B to correspond to a predetermined target impedance (eg, 50 ohms). In addition, the feedback circuit 442_3B can enable the input matching operation to the low noise amplifier including the first amplification unit 442B to be sufficiently performed. Further, the feedback circuit 442_3B can set the amplification gain of the first amplification unit 442B to be constant so that the linearity of the first amplification unit 442B can be improved.

9A and 9B are block diagrams showing an example of the second amplifying unit 446 shown in Fig. 5A.

Referring to FIG. 9A, as in FIG. 5A, the second amplifying unit 446A may include a plurality of amplifying circuits. The amplifying circuit 446_1A may be one of the plurality of amplifying circuits, and a configuration of the amplifying circuit 446_1A may be applied to the plurality of amplifying circuits. The amplification circuit 446_1A includes an amplifier 446_11A. The amplifier 446_11A receives the third radio frequency amplification signal RF _{IN_B3} including the third nonlinearity factor NLF3 from the first amplification unit _442A . The amplifier 446_11A can generate the radio frequency output signal RF _OUT by amplifying the third radio frequency amplification signal RF _{IN_B3} . The amplifier 446_11A according to an embodiment of the present invention generates a fourth nonlinearity factor NLF4 when the third radio frequency amplification signal RF _{IN_B3 is} amplified, and the fourth nonlinearity factor NLF4 has a third amplified nonlinearity factor BNLF3. Symbols with different symbols. Here, when the amplifier 446_11A amplifies the third radio frequency amplification signal, the amplifier 446_11A can cancel the fourth nonlinearity by adding the generated fourth nonlinearity factor NLF4 to the amplified third nonlinearity factor BNLF3. The degree factor NLF4 and the amplified third nonlinearity factor BNLF3. The cancellation of the nonlinearity factor in the second amplification unit 446A may be referred to as a second cancellation. Therefore, the radio frequency output signal RF _OUT may include a final non-linearity factor FNLF which is a result of cancellation between the fourth non-linearity factor NLF4 and the amplified third non-linearity factor BNLF. The final non-linearity factor FNLF may have a value of 0 or a value close to zero. Thereby, the second amplifying unit 446A removes the nonlinearity factor and increases the linearity of the second amplifying unit 446A. However, the inventive concept is not limited to the first amplifying unit 442A shown in FIG. 8A and the second amplifying unit 446A shown in FIG. 9A. For example, the first amplification unit 442A or the second amplification unit 446A may include more circuit configurations for canceling the nonlinearity factor in addition to the first cancellation and the second cancellation.

Referring to FIG. 9B, when compared with the second amplifying unit 446A shown in FIG. 9A, the amplifying circuit 446_1B of the second amplifying unit 446B may further include a current buffer 446_12B. Since the current buffer 446_12B is present, a large input/output impedance can be supplied to the amplification circuit 446_1B, and thus, the amplification gain of the amplification circuit 446_1B can be improved. In addition, the current buffer 446_12B can reduce the degree of change of the current flowing through the amplification circuit 446_1B, and thus, a stable amplification operation can be performed.

FIG. 10 is a graph illustrating a nonlinearity factor to be cancelled, according to an exemplary embodiment of the present invention.

Referring to FIG. 10, the transconductance second derivative gm'' of the transistor with respect to the amplifier including the predetermined transistor becomes a factor that hinders linearity during the amplification operation of the amplifier. Specifically, the value of gm'' varies depending on the gate-source voltage (VGS) or bias voltage of the transistor. In more detail, based on the predetermined reference value V _R , gm′′ may have a positive value in the area A and may have a negative value in the area B. Although the characteristics of the gm'' of the transistor may vary depending on the circuit configuration of the transistor, the following description will be provided based on the graph shown in FIG.

11A through 11C are detailed circuit diagrams of low noise amplifiers 500A, 500B, and 500C, in accordance with an exemplary embodiment of the present invention.

Referring to FIG. 11A, the low noise amplifier 500A includes a first amplifying unit 510A, a second amplifying unit 520A, and a switch 530A. Only one of the plurality of amplifying circuits is shown in the second amplifying units 520A, 520B, and 520C in FIGS. 11A to 11C. The first amplifying unit 510A includes a first input amplifier 512A and a second input amplifier 514A. The first input amplifier 512A includes an M _A1 transistor as an NMOS transistor, and the second input amplifier 514A includes a M _A2 transistor as a PMOS transistor. The source of the M _A1 transistor and the drain of the M _A2 transistor may be connected to each other via an X node, and the gate of the M _A1 transistor and the gate of the M _A2 transistor may be connected to each other via the Y node. The source of the M _A2 transistor can receive the supply voltage V _DD , and the drain of the M _A1 transistor can receive the ground voltage. The second amplifying unit 520A includes an amplifier 522A, and the amplifier 522A includes an M _B1 transistor as an NMOS transistor. The switch 530A includes a switching device SW that is turned on or off according to the switching control signal SWCS, and hereinafter, will be explained on the assumption that the switching device SW is in an on state.

First, a radio frequency input signal RF _{IN is} applied to the gate of the M _A1 transistor and the gate of the M _A2 transistor. The M _A1 transistor amplifies the radio frequency input signal RF _IN to generate a first radio frequency amplification signal RF _{IN_B1} . In the following, the non-linearity cause signal is a signal corresponding to the nonlinearity factor described above, and the fundamental signal may be a data processing operation including the data processor 280 shown in FIG. The signal of the information needed.

The first radio frequency amplification signal RF _{IN_B1} may include a first nonlinearity cause signal NCS1 corresponding to a nonlinearity factor and a first fundamental wave signal FS _{IN_B1} . The M _A2 transistor amplifies the radio frequency input signal to produce a second radio frequency amplification signal RF _{IN_B2} . The second radio frequency amplification signal RF _{IN_B2} may include a second nonlinearity cause signal NCS2 and a second fundamental wave signal FS _{IN_B2} corresponding to the nonlinearity factor. The nonlinearity cause signal is generated by the gm'' component of the transistor, and may be a reason for reducing the linearity of the first amplifying unit 510A or the second amplifying unit 520A.

In the first amplifying unit 510A according to the embodiment, in order to cancel the first nonlinearity cause signal NCS1 and the second nonlinearity cause signal NCS2, the first input amplifier 512A may generate a first nonlinearity cause signal having a positive value. NCS1, and the second input amplifier 514A can generate a second non-linearity cause signal NCS2 having a negative value. In an embodiment, to generate a non-linearity cause signal having a different sign, the bias voltage of the M _A1 transistor is different from the bias voltage of the M _A2 transistor. In an embodiment, to adjust the magnitude of the nonlinearity cause signal having different signs, the width (or width function) of the M _A1 transistor is different from the width of the M _A2 transistor. As the width of the transistor increases, an amplifier including a transistor may require a bias voltage that is less than the bias required to achieve the target amplification gain.

Referring to FIG. 10, when the first transistor TR _WD1 has the first width WD1 and the second transistor TR _WD2 has a second width WD2 smaller than the first width WD1, the first transistor TR _WD1 requires the first bias voltage V _GS1 And the second transistor TR _WD2 requires a second bias voltage V _GS2 that is greater than the first bias voltage V _GS1 to achieve the same target gain. When the bias voltage V _GS1 is applied first to the first transistor TR _WD1, the first transistor TR _WD1 gm '' may have a positive value, and when applied to the second transistor TR _WD2 second bias voltage V _GS2, The gm'' of the second transistor TR _WD2 may have a negative value.

Based on the above characteristics, the width of the M _A1 transistor and the width of the M _A2 transistor can be set such that the gm′′ of the M _A1 transistor has a negative value and the gm′′ of the M _A2 transistor has a positive value, and the amplifier can be Based on this design. In summary, the operating region of the M _A1 transistor is set differently from the operating region of the M _A2 transistor, and thus, the nonlinearity factor can be cancelled while amplifying.

As an example, the width of the M _A1 transistor and the width of the M _A2 transistor may be set such that the absolute value of the first nonlinearity cause signal NCS1 generated by the first input amplifier 512A is the same as that generated by the second input amplifier 514A. The absolute values of the two nonlinearity cause signals NCS2 are equal to each other. As an example, the width of the M _A2 transistor can be greater than the width of the M _A1 transistor. Here, the third radio frequency amplification signal RF _{IN_B3} output from the X node after combining the first radio frequency amplification signal RF _{IN_B1} and the second radio frequency amplification signal RF _{IN_B2} such that the third radio frequency amplification signal RF _{IN_B3} does not include non The linearity cause signal NCS3, but only the third fundamental wave signal FS _{IN_B3} .

The third radio frequency amplification signal RF _{IN_B3} may be applied to the gate of the M _B1 transistor. The M _B1 transistor can amplify the third radio frequency amplification signal RF _{IN_B3} to generate a radio frequency output signal RF _OUT . The radio frequency output signal RF _OUT may include a fundamental output signal FS _OUT and a fourth non-linearity cause signal NCS4. Since the nonlinearity cause signal is cancelled in the first amplifying unit 510A, the radio frequency output signal RF _OUT does not include a nonlinearity cause signal other than the fourth nonlinearity cause signal NCS4, and thus linearity can be ensured . The drain of the M _B1 transistor can receive the ground voltage and the source of the M _B1 transistor can provide the radio frequency output signal RF _OUT .

Referring to FIG. 11B, the low noise amplifier 500B includes a M _A1 'electrode, a M A ₂ ' transistor, and an M _B1 'transistor, and the M _A1 'transistor, the M A ₂ ' transistor, and the M _B1 'transistor have the same as FIG. 11A. The widths of the M _A1 transistor, the M _A2 transistor, and the M _B1 transistor included in the low noise amplifier 500A are shown. The first nonlinearity cause signal NCS1' generated by the first input amplifier 512B has a positive sign and the second nonlinearity cause signal NCS2' generated by the second input amplifier 514B has a negative sign, and the M _A1 'transistor can be The width and the width of the M _A2 'transistor are set such that the absolute value of the first nonlinearity cause signal NCS1' is greater than the absolute value of the second nonlinearity cause signal NCS2'. As an example, the width of the M _A2 'transistor can be greater than the width of the M _A1 'transistor. As a result, the third radio frequency amplified signal RF _{IN_B3} ' generated by the first amplifier 510B may include a third nonlinearity cause signal NCS3' having a predetermined positive value.

The amplifier 522B can amplify the third radio frequency amplification signal RF _{IN_B3} ' to output the radio frequency output signal RF _OUT '. In an embodiment, the width of the M _B1 'transistor is set such that the fourth nonlinearity cause signal NCS4' generated by the amplifier 522B has a sign different from the sign of the third amplified nonlinearity cause signal BNCS3', and It has the same absolute value as the absolute value of the third amplified nonlinearity cause signal BNCS3'. As an example, as described above with reference to FIG. 10, the width of the M _B1 'electron can be set such that the gm '' of the M _B1 'transistor has a positive value. Thus, the fourth signal nonlinearity reason NCS4 'of the third non-linearly amplified signal reason BNCS3' may cancel each other, and the radio frequency output signal RF _OUT 'may comprise only the fundamental output signal FS _OUT. Therefore, the linearity of the low noise amplifier 500B can be improved.

Referring to FIG. 11C, the low noise amplifier 500C includes a M _A1 '' transistor and a M _A2' transistor, and the M _A1 '' transistor and the M _A2 '' transistor are included in the low noise amplifier 500B shown in FIG. 11B. The M _A1 'transistor and the M _A2 'transistor have different widths. As an example, the width of the M _A1 '' transistor and the width of the M _A2 '' transistor may be set such that the first nonlinearity cause signal NCS1'' generated by the first input amplifier 512C has a positive sign and is second The second nonlinearity cause signal NCS2'' generated by the input amplifier 514C has a negative sign, and the absolute value of the first nonlinearity cause signal NCS1" is smaller than the absolute value of the second nonlinearity cause signal NCS2". As an example, the width of the 'M _A1 '' transistor may be less than the width of the M _A2 '' transistor. As a result, the third radio frequency amplification signal RF _{IN_B3} '' generated by the first amplifier 510C may include a third non-linearity cause signal NCS3'' having a predetermined negative value.

The amplifier 522C can amplify the third radio frequency amplification signal RF _{IN_B3} '' to output the radio frequency output signal RF _OUT ''_' . The width of the M _B1 '' transistor may be set such that the fourth nonlinearity cause signal NCS4'' generated by the amplifier 522C has a sign different from the sign of the third amplified nonlinearity cause signal BNCS3'', and has An absolute value equal to the absolute value of the third amplified nonlinearity cause signal BNCS3''. As an example, as explained above with reference to FIG. 10, the width of the M _B1 '' transistor may be set such that the gm'' of the M _B1 '' transistor has a negative value. Thus, the fourth signal nonlinearity reason NCS4 '' of the third non-linearly amplified signal reason BNCS3 '' may cancel each other, and the radio frequency output signal RF _OUT '' may comprise only the fundamental output signal FS _OUT ''. Therefore, the linearity of the low noise amplifier 500C can be improved. However, the inventive concept is not limited to the embodiment of the low noise amplifier illustrated with reference to Figures 11A-11C. Additionally, various embodiments may be provided in which a first cancellation between the non-linearity cause signals in the first amplifier and a second cancellation between the non-linearity cause signals in the second amplifier are provided. .

12A through 12C are detailed circuit diagrams of low noise amplifiers 600A, 600B, and 600C, in accordance with an exemplary embodiment of the present invention.

Referring to FIG. 12A, the low noise amplifier 600A includes a first amplifying unit 610A and a second amplifying unit 620A. 12A to 12C illustrate only one of a plurality of amplifying circuits included in the second amplifying unit 620A. The first amplifying unit 610A includes a first input amplifier 612A, a second input amplifier 614A, and a feedback circuit 616A. The feedback circuit 616A can include a resistor device R _F (eg, a resistor) and a capacitor device C _F . The resistor device R _F and the capacitor device C _F may be connected in series to each other. The feedback circuit 616A is connected to the Y node and the X node to be connected in parallel to the first input amplifier 612A and the second input amplifier 614A. The configurations of the first input amplifier 612A and the second input amplifier 614A have been explained above with reference to FIGS. 11A through 11C, and therefore, will not be described in detail herein.

The second amplifying unit 620A includes an amplifier 622A and a current buffer 624A. The current buffer 624A may include an M _B2 transistor as an NMOS transistor. The M _B2 transistor may form a cascade structure with the M _B1 transistor of the amplifier 622A and may be referred to as a cascade transistor. As an example, the on/off of the M _B2 transistor can be controlled according to the switch control signal SWCS2. The second amplifying unit 620A can be enabled or disabled by controlling the on/off of the M _B2 transistor.

Referring to FIG. 12B, when compared with the configuration of the low noise amplifier 600A shown in FIG. 12A, the first amplifying unit 610B and the second amplifying unit 620B may further include first and second interconnecting circuits 617B, 618B and 626B. The first interconnect circuit 617B may include a C _C1 coupling capacitor having a sufficiently large capacitance to have a smaller impedance than a transconductance (or 1/gm) of the M _A1 transistor. The second interconnect circuit 618B may include a C _C2 coupling capacitor having a sufficiently large capacitance to have a smaller impedance than the transconductance (or 1/gm) of the M _A2 transistor. Additionally, the first interconnect circuit 626B can include a C _C3 coupling capacitor having a sufficiently large capacitance to have a smaller impedance than the transconductance (or 1/gm) of the M _B1 transistor.

As explained above with reference to FIG. 8B, the input impedance Z _{IN1 of the} first amplifying unit 610B may have a constant target impedance due to the feedback circuit 616A. Therefore, the amplification gain of the first amplifying unit 610B may have a constant value to increase the linearity of the low noise amplifier 600B. In addition, for the input impedance Z _{IN2 of the} second amplifying unit 620B, as explained above with reference to FIG. 9B, the second amplifying unit 620B may have a large input/output impedance due to the current buffer 624B, and may have a first ratio The output impedance Z _{OUT of the} amplifying unit 610B is a much larger impedance value. Therefore, the second amplifying unit 620B may include a plurality of amplifying circuits (not shown), and may include many even when one amplifying circuit (for example, an amplifying circuit including the amplifier 622B and the current buffer 624B) is enabled or disabled. Amplifying circuit. The input impedance Z _{IN2 of the} second amplifying unit 620B is very large, and therefore, the amount of current flowing in other amplifying circuits may vary. Therefore, each of the amplifying circuits included in the second amplifying unit 620B may have an amplification gain of a constant value, thereby increasing the linearity of the low noise amplifier 600B.

Referring to FIG. 12C, the second amplifying unit 620C may further include a current guiding circuit 626C as compared with the low noise amplifier 600A shown in FIG. 12A. The current guiding circuit 626C includes an M _B3 transistor, and the on/off of the M _B3 transistor can be controlled according to the switching control signal SWCS3. In more detail, if it is desired to reduce the magnitude of the radio frequency output signal RF _OUT , the M _B3 transistor can be turned on. That is, when the M _B3 transistor is turned on, some of the current flowing in the amplifier 622C flows toward the current guiding circuit 626C, and thus, the radio frequency output signal RF _OUT having the magnitude can be output, wherein The magnitude is less than the magnitude of the output when the M _B3 transistor is turned off. The amplification gain of the second amplification unit 620C can be adjusted using the current steering circuit 626C.

FIG. 13 is a detailed circuit diagram of a low noise amplifier 700 according to an exemplary embodiment of the present invention, and FIGS. 14A and 14B are circuit diagrams illustrating an amplification operation of the low noise amplifier 700.

Referring to FIG. 13, the low noise amplifier 700 includes a first amplifying unit 710 and a second amplifying unit 720. The first amplifying unit 710 includes a first input amplifier 712, a second input amplifier 714, a feedback circuit 716, and interconnection circuits 717 and 718. The structure of the first amplifying unit 710 is the same as that of the above description with reference to FIG. 12A, and will not be described in detail.

The second amplifying unit 720 includes a plurality of amplifying circuits 720_1, 720_2, . . . , 720_M. The amplification circuits 720_1 to 720_M may include amplifiers 722_1, 722_2, ..., 722_M, current buffers 724_1, 724_2, ..., 724_M, and interconnection circuits 726_1, 726_2, ..., 726_M, respectively. The first amplifier 722_1 may include a transistor M _{B1_1} , the second amplifier 722_2 may include a transistor M _{B1 — 2} , and the Mth amplifier 722_M may include a transistor M _{B1 —} M . The first current buffer 724_1 may include a transistor M _{B2_1} , the second current buffer 724_2 may include a transistor M _{B2 — 2} , and the Mth current buffer 724_M may include a transistor M _{B2 —} M . The first interconnect circuit 726_1 may include a capacitor C _{C3_1} , the second interconnect circuit 726_2 may include a capacitor C _{C3_2} , and the Mth interconnect circuit 726_M may include a capacitor C _{C3_M} . Although not shown in FIG. 13, each of the amplifying circuits 720_1 to 720_M may further include the current guiding circuit 626C shown in FIG. 12C. The enabling and disabling of the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 can be controlled according to the switch control signals SWCS2_1, SWCS2_2, ..., SWCS2_M, and the enabled amplifying circuits 720_1 to 720_M can be received from the first amplifying unit 710 The amplified radio frequency input signal amplifies the amplified radio frequency input signal to output radio frequency output signals RF _OUT1 through RF _OUTM .

Figure 14A is a diagram illustrating the amplification operation of the low noise amplifier 700 in the form of non-carrier aggregation or inter-band carrier aggregation. Referring to FIG. 14A, the first amplifying unit 710 receives the radio frequency input signal RF _IN through the first carrier ω1 in the predetermined frequency band. As described above, the first amplifying unit 710 can amplify the radio frequency input signal RF _IN and cancel out the nonlinear factor generated during the amplification. In the embodiment, only the first amplifying circuit 720_1 of the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 is enabled by the switch control signal SWCS2_1, and the other amplifying circuits 712_2 to 720_M are disabled by the switch control signals SWCS2_2 to SWCS2_M. The first amplifying circuit 720_1 receives the amplified radio frequency input signal from the first amplifying unit 710, amplifies the amplified radio frequency input signal, and cancels out the nonlinear factor generated during the amplification and the previously existing nonlinear factor. The first amplifying circuit 720_1 may output a first radio frequency output signal RF _OUT1 corresponding to the first carrier ω1.

Figure 14B is a diagram illustrating the amplification operation of the low noise amplifier 700 in the form of in-band carrier aggregation. Referring to FIG. 14B, the first amplifying unit 710 receives the radio frequency input signal RF _IN transmitted through the first carrier ω1 and the second carrier ω2 in the predetermined frequency band. As described above, the first amplifying unit 710 can amplify the radio frequency input signal RF _IN and cancel out the nonlinear factor generated during the amplification. In the embodiment, only the first amplifying circuit 720_1 and the second amplifying circuit 720_2 of the amplifying circuits 720_1 to 720_M of the second amplifying unit 720 are enabled by the switch control signals SWCS2_1 and SWCS2_2, and the other amplifying circuits 720_M are disabled by the switch control signal SWCS2_M. . The first amplifying circuit 720_1 and the second amplifying circuit 720_2 receive the amplified radio frequency input signal from the first amplifying unit 710, amplify the amplified radio frequency input signal, and cancel out the nonlinear factor generated during the amplifying and the preexisting Nonlinear factor. The first amplifying circuit 720_1 outputs a first radio frequency output signal RF _OUT1 corresponding to the first carrier ω1, and the second amplifying circuit 720_2 outputs a second radio frequency output signal RF _OUT2 corresponding to the second carrier ω2.

FIG. 15 is a flowchart illustrating an operation of a wireless communication device according to an exemplary embodiment of the present invention.

Referring to FIG. 15, a first amplifying unit included in an amplifier block of the wireless communication device receives a radio frequency input signal, and amplifies the radio frequency input signal into a first radio frequency amplifying signal and a second radio frequency amplifying signal. The first radio frequency amplified signal includes a first non-linearity factor, the second radio frequency amplified signal includes a second non-linearity factor, and the second non-linearity factor has a first non-linearity factor Symbols with different symbols (S100). The first amplifying unit generates a third radio frequency amplified signal by combining the first radio frequency amplifying signal and the second radio frequency amplifying signal, the third radio frequency amplifying signal including a first nonlinearity factor and a second nonlinearity The result of the factors canceling each other (or the third nonlinearity factor) (S110). The second amplifying unit included in the amplifier block receives the third radio frequency amplified signal from the first amplifier and amplifies the third radio frequency amplified signal to generate a radio frequency output signal corresponding to the predetermined carrier (S120). The output circuit included in the wireless communication device receives the radio frequency output signal from the second amplifying unit and down-converts the radio frequency output signal to generate a baseband signal (S130).

FIG. 16 is a flowchart illustrating operation S120 of FIG. 15 according to an exemplary embodiment of the present invention.

Referring to FIG. 16, after operation S110, the second amplifying unit amplifies the third radio frequency amplified signal such that the sign of the amplified third nonlinearity factor is different from the fourth non-generated when the third radio frequency amplified signal is amplified. The sign of the linearity factor (S122). The second amplifying unit generates a radio frequency output signal including a result of canceling the amplified third nonlinearity factor and the fourth nonlinearity factor (S124). Thereafter, operation S130 may be performed.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Wireless communication system
100, 200‧‧‧ wireless communication devices
110, 112‧‧‧ base station
114‧‧‧Broadcasting station
120‧‧‧System Controller
130‧‧‧ satellite
210‧‧‧Main antenna
212‧‧‧Auxiliary antenna
220, 250‧‧‧ transceiver
222, 420, 520‧‧‧ antenna interface circuit
224a~224k, 254a~254l, 500A, 500B, 500C, 600A, 600B, 600C, 700‧‧‧ low noise amplifier
225a~225k, 255a~255l‧‧‧ receiving circuit
226a‧‧‧Power Amplifier
227a‧‧‧Transmission circuit
230a‧‧‧ Receiver / First Receiver
230b~230k, 260a~260l, 400, 400', 500‧‧‧ Receiver
240a‧‧‧transmitter/first transmitter
240b~240k, 270a~270l‧‧‧transmitters
280‧‧‧data processor
282‧‧‧ memory
410, 510‧‧‧ antenna
430‧‧‧Input matching circuit
440‧‧‧Carrier Aggregation Low Noise Amplifier/Low Noise Amplifier
442, 442A, 442B, 510A, 610A, 610B, 710‧‧‧ first amplification unit
442_1A, 442_1B, 512A, 512B, 512C, 612A, 712‧‧‧ first input amplifier
442_2A, 442_2B, 514A, 514B, 514C, 614A, 714‧‧‧ second input amplifier
442_3B, 616A, 716‧‧‧ feedback circuit
443, 446_1, 446_1A, 446_1B, 446_2~446_M, 446_1', 446_2'~446_M', 720_3~720_M‧‧‧ amplifying circuit
444'‧‧‧Switch unit
446, 446A, 446B, 520A, 520B, 520C, 620A, 620B, 620C, 720‧‧‧ second amplification unit
446_11A, 522A, 522B, 522C, 622A, 622B, 622C‧‧ ‧ amplifier
446_12B, 624A, 624B‧‧‧ current buffer
450_1, 450_2~450_M‧‧‧ output circuit
451_1, 451_2~451_M‧‧‧ load circuit
452_1, 552_1‧‧‧down converter circuit / first down converter circuit
452_2~452_M‧‧‧Down Converter Circuit / Second Down Converter Circuit ~ M Down Converter Circuit
453_1, 453_2~453_M, 454_1, 454_2~454_M‧‧‧ Mixer
455_1, 455_2~455_M, 456_1, 456_2~456_M‧‧‧ baseband filter
510B, 510C‧‧‧ first amplifier
530A‧‧ switch
530_1‧‧‧First input matching circuit/input matching circuit
530_N‧‧‧Nth input matching circuit/input matching circuit
540‧‧‧Multiple Input Multiple Output Low Noise Amplifier
550_1‧‧‧Output circuit / first output circuit
550_2‧‧‧Output circuit / second output circuit
550_3‧‧‧Output circuit / third output circuit
550_4‧‧‧Output circuit / fourth output circuit
550_5~550_M‧‧‧Output circuit / fifth output circuit ~ M output circuit
551_1‧‧‧Load circuit / first load circuit
551_2‧‧‧Load circuit / second load circuit
551_3‧‧‧Load circuit / third load circuit
551_4‧‧‧Load circuit / fourth load circuit
551_5~551_M‧‧‧Load circuit / fifth load circuit ~ M load circuit
552_2‧‧‧Down Converter Circuit / Second Down Converter Circuit
552_3‧‧‧Down Converter Circuit / Third Down Converter Circuit
552_4‧‧‧Down Converter Circuit / Fourth Down Converter Circuit
552_5~552_M‧‧‧Down Converter Circuit / Fifth Down Converter Circuit ~ M Down Converter Circuit
617B, 626B‧‧‧ first interconnect circuit
618B‧‧‧Second interconnect circuit
626C‧‧‧ Current Guide Circuit
717, 718‧‧‧ Interconnected circuits
720_1‧‧‧First Amplifier Circuit / Amplifier Circuit
720_2‧‧‧Second amplifying circuit/amplifying circuit
722_1‧‧Amplifier/First Amplifier
722_2~722_M‧‧‧Amplifier/Secondary Amplifier~Mth Amplifier
724_1‧‧‧ Current buffer / first current buffer
724_2~724_M‧‧‧ Current buffer / second current buffer ~ mth current buffer
726_1‧‧‧Interconnect circuit/first interconnect circuit
726_2~726_M‧‧‧Interconnect circuit/second interconnect circuit~mth interconnect circuit
AMPB, AMPB_9~AMPB_N‧‧‧Amplifier Blocks
AMPB_1‧‧‧Amplifier Block/First Amplifier Block
AMPB_2‧‧‧Amplifier Block/Second Amplifier Block
AMPB_3‧‧‧Amplifier Block / Third Amplifier Block
AMPB_4‧‧‧Amplifier Block / Fourth Amplifier Block
AMPB_5‧‧‧Amplifier Block / Fifth Amplifier Block
AMPB_6‧‧‧Amplifier Block / 6th Amplifier Block
AMPB_7‧‧‧Amplifier Block / Seventh Amplifier Block
AMPB_8‧‧‧Amplifier Block / 8th Amplifier Block
BNCS3', BNCS3''‧‧‧ third amplified nonlinearity cause signal
BNLF3‧‧‧ Third amplified nonlinearity factor / amplified third nonlinearity factor
C _C1 , C _C2 , C _C3 ‧‧‧ coupling capacitor
C _{C3_1} , C _{C3_2} , C _{C3_M ‧‧ ‧} capacitor
C _F ‧‧‧ capacitor device
EN/DIS_CS‧‧‧Enable/disable control signals
FS _{IN_B1 ‧‧‧First} fundamental signal
FS _{IN_B2 ‧‧‧second} fundamental signal
FS _{IN_B3 ‧‧‧third} fundamental signal
FS _OUT , FS _OUT ''‧‧‧ fundamental output signal
FNLF‧‧‧final nonlinearity factor
ILO1‧‧‧In-phase local oscillator signal
M _A1 , M _A1 ', M _A1 '', M _A2 , M _A2 ', M _A2 '', M _B1 , M _B1 ', M _B1 '', M _B2 , M _B3 , M _{B1_1} , M _{B1_2} , M _{B1_M} , M _{B2_1} , M _{B2_2} , M _{B2_M ‧‧‧O} crystal
NCS1, NCS1', NCS1''‧‧‧ first nonlinearity cause signal
NCS2, NCS2', NCS2''‧‧‧ second nonlinearity cause signal
NCS3‧‧‧Nonlinearity cause signal
NCS3', NCS3''‧‧‧ third nonlinearity cause signal
NCS4, NCS4', NCS4''‧‧‧ fourth nonlinearity cause signal
NLF1‧‧‧first nonlinearity factor
NLF2‧‧‧Second nonlinearity factor
NLF3‧‧‧ third nonlinearity factor
NLF4‧‧‧ fourth nonlinearity factor
QLO1‧‧‧Orthogonal local oscillator signal
R _F ‧‧‧Resistor device
RF _IN , RF _IN4 ~ RF _INN ‧‧‧ Radio frequency input signal
RF _IN1 ‧‧‧radio frequency input signal / first radio frequency input signal
RF _IN2 ‧‧‧radio frequency input signal / second radio frequency input signal
RF _IN3 ‧‧‧radio frequency input signal / third radio frequency input signal
RF _{IN_B1 ‧‧‧First} radio frequency amplified signal
RF _{IN_B2 ‧‧‧Second} radio frequency amplified signal
RF _{IN_B3} , RF _{IN_B3} ', RF _{IN_B3} ''‧‧‧ Third radio frequency amplified signal
RF _OUT , RF _OUT ', RF _OUT ''‧‧‧ radio frequency output signal
RF _OUT1 ‧‧‧Radio frequency output signal / first radio frequency output signal
RF _OUT2 ‧‧‧Radio frequency output signal / second radio frequency output signal
RF _OUT3 ‧‧‧Radio frequency output signal / third radio frequency output signal
RF _OUT4 ~RF _{OUTM ‧‧‧Radio} frequency output signal
RX _IN ‧‧‧ Receiver input signal
RX _IN1 ‧‧‧First Receiver Input Signal/Receiver Input Signal
RX _INN ‧‧‧Nth Receiver Input Signal/Receiver Input Signal
S100, S110, S120, S122, S124, S130‧‧‧ steps
SW, SW ₁ , SW ₂ ~ SW _M ‧‧‧ Switchgear
SWCS, SWCS2, SWCS3, SWCS2_1, SWCS2_2~SWCS2_M‧‧‧ switch control signals
TR _WD1 ‧‧‧First transistor
TR _WD2 ‧‧‧Second transistor
V _DD ‧‧‧Power supply voltage
V _GS1 ‧‧‧First bias
V _GS2 ‧‧‧second bias
V _R ‧‧‧Predetermined reference value
WD1‧‧‧ first width
WD2‧‧‧ second width
X, Y‧‧‧ nodes
XBAS _OUT1 , XBAS _OUT2 , XBAS _OUT3 ~XBAS _OUTM ‧‧‧ baseband signal
XMOD‧‧‧ mode control signal
Z _IN , Z _IN1 , Z _IN2 ‧‧‧ Input impedance
Z _OUT ‧‧‧Output impedance ω1‧‧‧First carrier/carrier ω2‧‧‧Second carrier/carrier ω3‧‧‧ Third carrier/carrier

1 is a diagram of a wireless communication device and a wireless communication system including the wireless communication device, in accordance with an exemplary embodiment of the present invention. 2A through 2F are diagrams illustrating a carrier aggregation (CA) technique according to an exemplary embodiment of the present invention. 3 is a block diagram of an example of the wireless communication device shown in FIG. 1. 4 is a block diagram of a receiver in accordance with an exemplary embodiment of the present invention. 5A and 5B are block diagrams of the receiver of FIG. 4, in accordance with an exemplary embodiment of the present invention. FIG. 6 is a block diagram of a receiver in accordance with an exemplary embodiment of the present invention. Figure 7A is a block diagram of the receiver of Figure 6 in accordance with an exemplary embodiment of the present invention. Figure 7B is a block diagram illustrating the operation of the receiver in the form of inter-band carrier aggregation. Figure 7C is a block diagram illustrating the operation of the receiver in the form of in-band carrier aggregation. 8A and 8B are block diagrams of the first amplifier of FIG. 5A, in accordance with an exemplary embodiment of the present invention. 9A and 9B are block diagrams of the second amplifier of FIG. 5A, in accordance with an exemplary embodiment of the present invention. FIG. 10 is a graph illustrating a nonlinearity factor to be compensated according to an exemplary embodiment of the present invention. 11A through 11C are detailed circuit diagrams of a low noise amplifier (LNA) according to an exemplary embodiment of the present invention. 12A through 12C are detailed circuit diagrams of a low noise amplifier according to an exemplary embodiment of the present invention. FIG. 13 is a detailed circuit diagram of a low noise amplifier according to an exemplary embodiment of the present invention. 14A and 14B are circuit diagrams illustrating an amplification operation of a low noise amplifier. FIG. 15 is a flowchart illustrating an operation of a wireless communication device according to an exemplary embodiment of the present invention. FIG. 16 is a flowchart illustrating operation S120 of FIG. 15 according to an exemplary embodiment of the present invention.

Claims (25)

A wireless communication device, comprising: an amplifier block configured to receive a radio frequency input signal transmitted using at least one carrier and amplify the radio frequency input signal to generate at least one radio frequency output signal, wherein the amplifier block comprises a first amplifying unit configured to amplify the radio frequency input signal to generate a first radio frequency amplifying signal and a second radio frequency amplifying signal, and amplifying the first radio frequency signal and the second radio frequency Amplifying the signals to combine to generate a third radio frequency amplified signal, the first radio frequency amplified signal comprising a first non-linearity factor, the second radio frequency amplified signal comprising a first different from the first non-linearity factor a second non-linearity factor; and a second amplifying unit configured to receive the third radio frequency amplified signal and amplify the third radio frequency amplified signal to generate a radio frequency output signal corresponding to the at least one carrier. The wireless communication device of claim 1, wherein the sign of the first non-linearity factor and the sign of the second non-linearity factor are opposite to each other, and wherein the combination is by A radio frequency amplified signal is added to the second radio frequency amplified signal for execution. The wireless communication device of claim 2, wherein an absolute value of the first nonlinearity factor and an absolute value of the second nonlinearity factor are equal to each other. The wireless communication device of claim 1, wherein the first amplifying unit comprises: a first input amplifier configured to receive the radio frequency input signal and amplify the radio frequency input signal to output a first radio frequency amplified signal; and a second input amplifier connected in parallel to the first input amplifier and configured to receive the radio frequency input signal and amplify the radio frequency input signal to output the second Radio frequency amplification signal. The wireless communication device of claim 4, wherein an output node of the first input amplifier is coupled to an output node of the second input amplifier. The wireless communication device of claim 4, wherein the first input amplifier comprises a first transistor of a first width, the first transistor has a gate, and the radio frequency input signal is applied to the a gate, the second input amplifier includes a second transistor of a second width, the second transistor has a gate, and the radio frequency input signal is applied to the gate, wherein the second width Different from the first width, and the working area of the first transistor is different from the working area of the second transistor. The wireless communication device of claim 6, wherein the first transistor is configured to amplify the radio frequency input signal into the first radio frequency amplifying signal, the first radio frequency amplifying signal Include the first non-linearity factor having a first symbol, and the second transistor is configured to amplify the radio frequency input signal to the second radio frequency amplified signal, the second radio frequency amplification The signal includes the second non-linearity factor having a second symbol that is different from the first symbol. The wireless communication device of claim 4, wherein the first amplifying unit further comprises a feedback circuit connected in parallel to the first input amplifier and the second input amplifier, the feedback circuit comprising at least one A resistor device and at least one capacitor device. The wireless communication device of claim 1, wherein the third radio frequency amplified signal includes a third non-linearity factor, and the second amplifying unit amplifies the third radio frequency amplified signal A fourth non-linearity factor different from the third non-linearity factor is generated. The wireless communication device of claim 9, wherein the sign of the fourth non-linearity factor is opposite to the sign of the third non-linearity factor that is amplified, and wherein the output of the radio frequency signal The final non-linearity factor is the result of adding the fourth non-linearity factor to the amplified third non-linearity factor. The wireless communication device of claim 10, wherein the absolute value of the fourth non-linearity factor is equal to an absolute value of the third non-linearity factor that is amplified. The wireless communication device of claim 9, wherein the second amplifying unit comprises a plurality of amplifying circuits, the amplifying circuit comprises a transistor, the transistor has a gate, and the third radio frequency is amplified. A signal is applied to the gate, and the transistor has a width such that a sign of the fourth non-linearity factor is opposite to a sign of the third non-linearity factor that is amplified. The wireless communication device of claim 12, wherein the amplifying circuit further comprises a current buffer connected in series to the transistor, and the current buffer is configured to be based on a switch control transmitted from an external source. The signal is turned "on" or "off" to enable or disable the amplifying circuit. The wireless communication device of claim 1, wherein an input impedance of the second amplifying unit is greater than an output impedance of the first amplifying unit. The wireless communication device of claim 1, further comprising an output circuit for outputting the radio frequency output signal after down-converting the radio frequency output signal to a baseband signal. The wireless communication device of claim 1, further comprising: at least one antenna configured to receive radio frequency data; and an antenna interface circuit configured to filter the radio frequency data according to a predetermined frequency bandwidth And an input matching circuit configured to perform impedance matching between the at least one antenna and the amplifier block and to generate the radio frequency input signal using the radio frequency data filtered by the antenna interface circuit . a receiver for receiving a radio frequency input signal and processing the radio frequency input signal based on a carrier aggregation mode, wherein the receiver comprises: a plurality of amplifier blocks, wherein each of the plurality of amplifier blocks The method includes: a first amplifying unit including at least two input amplifiers having different properties from each other such that nonlinearity factors generated when the radio frequency input signal is amplified have different symbols from each other, and the first amplifying unit is configured Performing a first cancellation of the non-linearity factor and amplifying the radio frequency input signal into a radio frequency amplified signal using the at least two input amplifiers; and a second amplifying unit comprising a plurality of amplifying circuits, the plurality The amplification circuits each include at least one amplifier configured to receive the radio frequency amplification signal and amplify the radio frequency amplification signal to output a radio frequency output signal corresponding to a predetermined carrier. The receiver of claim 17, wherein the radio frequency amplified signal comprises a non-linearity factor, and the at least one amplifier has a predetermined characteristic such that a nonlinearity generated when the radio frequency amplified signal is amplified The degree factor and the amplified nonlinearity factor of the radio frequency amplified signal have different symbols from each other. The receiver of claim 18, wherein the plurality of amplifying circuits are configured to perform, by the at least one amplifier, the non-linearity factor generated when the radio frequency amplifying signal is amplified, A second cancellation between the amplified non-linearity factors of the radio frequency amplified signal. The receiver of claim 18, wherein the amplifier comprises a transistor, the transistor has a gate, the radio frequency amplification signal is applied to the gate, and the transistor has a predetermined Width to generate a non-linearity factor having a sign different from a sign of the amplified non-linearity factor of the radio frequency amplified signal when the radio frequency amplified signal is amplified. The receiver of claim 17, wherein each of the at least two input amplifiers comprises a transistor having a gate, the radio frequency input signal being applied to the gate And the transistors have different widths from each other such that the working regions of the transistors are different from each other. The receiver of claim 17, wherein the plurality of amplifiers are when the receiver is in an in-band mode and receives a radio frequency signal transmitted using a first carrier and a second carrier in the first frequency band a first amplifier block in the block is enabled to receive a first radio frequency input signal included in the radio frequency signal, the first amplifying unit of the first amplifier block being further configured to amplify Transmitting the first radio frequency input signal to output the first radio frequency amplification signal to the second amplifying unit, and the first of the plurality of amplifying circuits included in the second amplifying unit of the first amplifier block An amplification circuit and a second amplification circuit are enabled, the first amplification circuit configured to receive and amplify the first radio frequency amplification signal to output a first radio frequency output signal corresponding to the first carrier, and The second amplifying circuit is configured to receive and amplify the first radio frequency amplified signal to output a second radio corresponding to the second carrier Of the output signal. A wireless communication device, comprising: a first amplifier comprising a first complementary transistor, the first complementary transistor having a first width, the first amplifier configured to amplify an input radio frequency signal to generate a first amplified radio frequency a signal, the input radio frequency signal being transmitted using at least one carrier wave; a second amplifier comprising a non-complementary transistor having a second width different from the first width, the second amplifier being Configuring to amplify the input radio frequency signal to generate a second amplified radio frequency signal; and a third amplifier comprising a second complementary transistor configured to receive the first amplified radio frequency signal and The second amplifies the radio frequency signal and outputs a third radio frequency amplified signal. The wireless communication device of claim 23, wherein the first width and the second width are set such that a sign of a first non-linearity factor of the first amplified radio frequency signal is The sign of the second non-linearity factor of the second amplified radio frequency signal is opposite. The wireless communication device of claim 24, wherein a width of the second complementary transistor is set to a third sum of the first amplified radio frequency signal and the second amplified radio frequency signal The sign of the nonlinearity factor is opposite to the sign of the fourth non-linearity factor of the third radio frequency amplified signal.