TW201814933A - Organic EL device, display device and method for manufacturing organic EL device - Google Patents

Organic EL device, display device and method for manufacturing organic EL device Download PDF

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TW201814933A
TW201814933A TW106128750A TW106128750A TW201814933A TW 201814933 A TW201814933 A TW 201814933A TW 106128750 A TW106128750 A TW 106128750A TW 106128750 A TW106128750 A TW 106128750A TW 201814933 A TW201814933 A TW 201814933A
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layer
metal
organic electroluminescence
substrate
electroluminescence device
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山下和貴
倉田知己
源千
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日商住友化學股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8423Metallic sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • H10K50/171Electron injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

An object of the present invention is to provide an organic EL device with improved lifetime. An organic EL device of the present invention comprises a substrate, a bank provided on the substrate, an anode provided in a section defined by the bank on the substrate, a functional layer provided on the anode, a compound layer having an electron injecting property which is provided on the functional layer, a metal layer provided on the compound layer having an electron injecting property, and a cathode provided on the metal layer, wherein the functional layer has a light emitting layer, and the metal layer is a layer of an alloy containing a reducing metal or a metal mixture containing a reducing metal.

Description

有機電致發光裝置、顯示元件及有機電致發光裝置的製造方法    Organic electroluminescence device, display element and manufacturing method of organic electroluminescence device   

本發明涉及有機電致發光(Electro-Luminescence,簡稱EL)裝置、顯示元件和有機電致發光裝置的製造方法。 The invention relates to an organic electroluminescence (EL) device, a display element, and a method for manufacturing an organic electroluminescence device.

作為有機電致發光裝置者,如專利文獻1,已知有一種藉由隔堤(間隔壁)來規定複數個像素的裝置。如此之有機電致發光裝置中,在各像素內設置有機發光層,使各個像素發出光。如此藉由隔堤分區化的有機電致發光裝置已知可藉由噴墨印刷法來製造。 As an organic electroluminescence device, for example, Patent Document 1 discloses a device in which a plurality of pixels are defined by a bank (partition wall). In such an organic electroluminescence device, an organic light emitting layer is provided in each pixel so that each pixel emits light. It is known that an organic electroluminescence device that is partitioned by a bank as described above can be manufactured by an inkjet printing method.

[現有技術文獻]     [Prior Art Literature]     [專利文獻]     [Patent Literature]    

專利文獻1:國際公開第2008/149499號 Patent Document 1: International Publication No. 2008/149499

然而,如上述之有機電致發光裝置存在有壽命容易變短之問題。 However, the organic electroluminescence device as described above has a problem that the life is easily shortened.

本發明鑒於上述課題,而以提供長壽命的有機電致發光裝置、具備該有機電致發光裝置的顯示元件、以及該有機電致發光裝置的製造方法為目的。 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a long-lived organic electroluminescence device, a display element including the organic electroluminescence device, and a method for manufacturing the organic electroluminescence device.

本發明的有機電致發光裝置具備:基板、設置於基板上的隔堤、設置於以基板上的隔堤所限定的分區中的陽極、設置於陽極上的功能層、設置於功能層上的具備電子注入性的化合物層、設置於具備電子注入性的化合物層上的金屬層、以及設置於金屬層上的陰極,其中,功能層具有發光層,金屬層為包含還原性金屬的合金或包含還原性金屬的金屬混合物的層。 The organic electroluminescence device of the present invention includes a substrate, a bank provided on the substrate, an anode provided in a zone defined by the bank on the substrate, a functional layer provided on the anode, and a functional layer provided on the functional layer. A compound layer having an electron injectability, a metal layer provided on the compound layer having an electron injection, and a cathode provided on the metal layer, wherein the functional layer has a light emitting layer, and the metal layer is an alloy containing a reducing metal or a metal A layer of a metal mixture of reducing metals.

上述具備電子注入性的化合物層較佳為包含除Li以外的元素週期表第1族金屬元素的氟化物。 The compound layer having the electron injection property is preferably a fluoride containing a Group 1 metal element of the periodic table other than Li.

上述具備電子注入性的化合物層較佳為包含NaF。 It is preferable that the compound layer having the electron injection property contains NaF.

上述還原性金屬較佳為Mg、Ca或Ba。 The reducing metal is preferably Mg, Ca, or Ba.

上述具備電子注入性的化合物層較佳為具有10nm以下的厚度。 It is preferable that the compound layer having the electron injection property has a thickness of 10 nm or less.

上述金屬層較佳為具有10nm以下的厚度。 The metal layer preferably has a thickness of 10 nm or less.

本發明的顯示裝置具備上述有機電致發光裝置。 A display device of the present invention includes the organic electroluminescence device.

本發明的有機電致發光裝置的製造方法 中,藉由噴墨印刷法形成上述功能層。 In the method for manufacturing an organic electroluminescent device according to the present invention, the functional layer is formed by an inkjet printing method.

根據本發明,可以提供長壽命的有機電致發光裝置、具備該有機電致發光裝置的顯示元件、以及該有機電致發光裝置的製造方法。 According to the present invention, a long-life organic electroluminescence device, a display element including the organic electroluminescence device, and a method for manufacturing the organic electroluminescence device can be provided.

1‧‧‧有機電致發光裝置 1‧‧‧Organic electroluminescence device

2‧‧‧像素 2‧‧‧ pixels

10‧‧‧附有隔堤的基板 10‧‧‧ Substrate with bank

11‧‧‧基板 11‧‧‧ substrate

12‧‧‧陽極 12‧‧‧Anode

13‧‧‧隔堤 13‧‧‧ Sediment

20‧‧‧有機電致發光結構部 20‧‧‧Organic Electroluminescence Structure Department

21‧‧‧功能層 21‧‧‧Functional layer

22‧‧‧具備電子注入性的化合物層 22‧‧‧ Compound layer with electron injection

23‧‧‧金屬層 23‧‧‧metal layer

30‧‧‧陰極 30‧‧‧ cathode

第1圖係從附有隔堤的基板側觀察本實施形態所述的有機電致發光裝置時的俯視圖。 FIG. 1 is a plan view when the organic electroluminescence device according to this embodiment is viewed from the substrate side with a bank.

第2圖是沿著第1圖的II-II線的截面的部分放大圖。 Fig. 2 is a partially enlarged view of a cross section taken along a line II-II in Fig. 1.

以下,針對本發明的實施形態,參照附圖進行說明。對相同的要素賦予相同的標記。省略重複的說明。附圖的尺寸比率不一定與所說明的內容一致。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same reference numerals are assigned to the same elements. Repeated description is omitted. The dimensional ratios of the drawings are not necessarily consistent with those described.

第1圖所示的有機電致發光(有機EL)裝置1為有機電致發光顯示器面板,其具有複數個像素2。各像素2為有機電致發光元件部,其形成於附有隔堤的基板10上的藉由隔堤所限定的分區,該附有隔堤的基板10係在基板11上形成有隔堤者。亦即,有機電致發光裝置1具有複數個有機電致發光元件部一體地連接成的構成。本實施形態中,“像素”是指發出光的最小單位(或最小區域),藉由像素2的發光,像素2具有顏色資訊。第1圖中,將像素2用虛線概略性地表示。 The organic electroluminescence (organic EL) device 1 shown in FIG. 1 is an organic electroluminescence display panel having a plurality of pixels 2. Each pixel 2 is an organic electroluminescence element portion, which is formed on a partition defined by a bank on a substrate 10 with a bank. The bank 10 with a bank is formed on the substrate 11. . That is, the organic electroluminescence device 1 has a structure in which a plurality of organic electroluminescence element portions are integrally connected. In this embodiment, the “pixel” refers to a minimum unit (or a minimum area) of light emitted, and the pixel 2 has color information by emitting light from the pixel 2. In FIG. 1, the pixel 2 is schematically shown by a dotted line.

第2圖是對應於沿著第1圖中的II-II線的 附有隔堤的基板10的截面的部分放大圖的圖式。如第2圖所示,本實施形態之前述有機電致發光裝置具備:基板11、設置於基板11上的隔堤13、設置於以隔堤13所限定的分區中的複數個陽極12、設置於陽極12上的有機電致發光結構部20、以及陰極(第2電極)30。有機電致發光結構部20具備:包含發光層的功能層21、直接設置於功能層21上的具備電子注入性的化合物層22、以及設置於具備電子注入性的化合物層22上的金屬層23,其中,該金屬層23為包含至少1種還原性金屬的合金或者包含至少1種還原性金屬的金屬混合物的層。有機電致發光裝置1可以為頂發射型的裝置,也可以為底發射型的裝置。以下在沒有說明的情況下,針對底發射型,亦即從附有隔堤的基板10側提取光的情況進行說明。 Fig. 2 is a partially enlarged view of a cross section of the substrate 10 with a bank along the line II-II in Fig. 1. As shown in FIG. 2, the organic electroluminescence device according to this embodiment includes a substrate 11, a bank 13 provided on the substrate 11, a plurality of anodes 12 provided in a zone defined by the bank 13, and An organic electroluminescence structure portion 20 on the anode 12 and a cathode (second electrode) 30. The organic electroluminescence structure section 20 includes a functional layer 21 including a light-emitting layer, a compound layer 22 having an electron injection property provided directly on the functional layer 21, and a metal layer 23 provided on the compound layer 22 having an electron injection property. The metal layer 23 is an alloy containing at least one reducing metal or a layer of a metal mixture containing at least one reducing metal. The organic electroluminescence device 1 may be a top emission type device or a bottom emission type device. In the following, if not explained, a description will be given of a case of a bottom emission type, that is, a case where light is extracted from the substrate 10 side with a bank.

基板11可以為對可見光(波長為400nm至800nm的光)具有光穿透性的板狀透明構件。基板11為支撐陽極12和隔堤13的支撐體。基板11的厚度的例子為30μm以上且1100μm以下。基板11可以為例如玻璃基板和矽基板等剛性基板,也可以為塑膠基板和高分子膜等可撓性基板。藉由使用可撓性基板,有機電致發光裝置1能夠具有可撓性。 The substrate 11 may be a plate-shaped transparent member having light transparency to visible light (light having a wavelength of 400 nm to 800 nm). The substrate 11 is a support that supports the anode 12 and the bank 13. Examples of the thickness of the substrate 11 are 30 μm or more and 1100 μm or less. The substrate 11 may be a rigid substrate such as a glass substrate and a silicon substrate, or a flexible substrate such as a plastic substrate or a polymer film. By using a flexible substrate, the organic electroluminescence device 1 can have flexibility.

基板11可以預先形成有用以驅動各像素2的電路。基板11可以預先形成有例如TFT(薄膜電晶體,Thin Film Transistor)、電容器等。 The substrate 11 may be previously formed with a circuit for driving each pixel 2. The substrate 11 may be formed in advance with, for example, a TFT (Thin Film Transistor), a capacitor, or the like.

複數個陽極12在基板11的表面上設置於與 各像素2相對應的區域上。陽極12的俯視形狀(從基板11的板厚方向觀察到的形狀)的例子可以舉出矩形和正方形之類的四邊形和其他多邊形。陽極12的俯視形狀可以為圓形或橢圓形。 A plurality of anodes 12 are provided on the surface of the substrate 11 on a region corresponding to each pixel 2. Examples of the shape of the anode 12 in a plan view (the shape viewed from the thickness direction of the substrate 11) include a quadrangle such as a rectangle and a square, and other polygons. The anode 12 may be circular or oval in plan view.

陽極12可以使用包含金屬氧化物、金屬硫化物和金屬等的薄膜,具體而言,可以使用包含氧化銦、氧化鋅、氧化錫、銦錫氧化物(Indium Tin Oxide:簡稱ITO)、銦鋅氧化物(Indium Zinc Oxide:簡稱IZO)、金、鉑、銀和銅等的薄膜。如本實施形態中主要說明所述,有機電致發光裝置1從附有隔堤的基板10側射出光時,使用顯示光穿透性的陽極12。 As the anode 12, a thin film containing metal oxide, metal sulfide, metal, or the like can be used. Specifically, indium oxide, zinc oxide, tin oxide, indium tin oxide (ITO), and indium zinc oxide can be used. (Indium Zinc Oxide: IZO for short), thin films of gold, platinum, silver and copper. As described mainly in this embodiment, when the organic electroluminescence device 1 emits light from the substrate-attached substrate 10 side, an anode 12 that exhibits light permeability is used.

陽極12的厚度可以考慮光穿透性、電導率等來適當地決定。陽極12的厚度為例如10nm至10μm,較佳為20nm至1μm,又更佳為50nm至500nm。 The thickness of the anode 12 can be appropriately determined in consideration of light transmittance, electrical conductivity, and the like. The thickness of the anode 12 is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.

在一實施形態中,在陽極12與基板11之間可以設置由絕緣層等構成的層。絕緣層等層也可以被視為基板11的一部分。 In one embodiment, a layer made of an insulating layer or the like may be provided between the anode 12 and the substrate 11. A layer such as an insulating layer may be regarded as a part of the substrate 11.

如第2圖所示,隔堤13設置於各陽極12的周圍。隔堤13也可以跨相鄰的陽極12之間設置。隔堤13的一部分可以覆蓋陽極12的周緣部。隔堤13是分區像素2或像素區域2a的間隔壁。亦即,隔堤13以具有將在基板11的表面11a上預先設定的像素區域2a進行分區的開口如此的圖案而設置於基板11上。本實施形態中,如第1圖所示,複數個像素2以二維排列配置,因此在基板11 上設置格子狀的隔堤13。 As shown in FIG. 2, the bank 13 is provided around each anode 12. The bank 13 may be provided across the adjacent anodes 12. A part of the bank 13 may cover the peripheral edge portion of the anode 12. The bank 13 is a partition wall of the partitioned pixel 2 or the pixel region 2a. In other words, the bank 13 is provided on the substrate 11 in a pattern having an opening that partitions the pixel region 2 a set in advance on the surface 11 a of the substrate 11. In this embodiment, as shown in FIG. 1, since the plurality of pixels 2 are arranged in a two-dimensional array, a grid-like bank 13 is provided on the substrate 11.

隔堤13的材料的例子為樹脂。隔堤13為例如包含疏液劑的感光性樹脂組合物的固化物。作為疏液劑的例子,可以舉出含有氟樹脂的疏液劑。在以隔堤13所限定的分區上,如後述,藉由塗佈法形成包含發光層的功能層。因此,通常在以隔堤13所限定的分區上利用塗佈法形成功能層時,隔堤13以具有能夠適合形成該功能層的特性(例如潤濕性)的方式形成。 An example of the material of the bank 13 is a resin. The bank 13 is, for example, a cured product of a photosensitive resin composition containing a liquid repellent. Examples of the liquid repellent include a liquid repellent containing a fluororesin. A functional layer including a light-emitting layer is formed on a partition defined by the bank 13 by a coating method as described later. Therefore, when a functional layer is generally formed by a coating method on a partition defined by the bank 13, the bank 13 is formed so as to have characteristics (for example, wettability) suitable for forming the functional layer.

隔堤13的形狀和其配置可以根據像素2的數量和解析度等有機電致發光裝置1的規格、製造的容易度等來適當地設定。例如,第2圖中,擔當以隔堤13所確定的分區的側面係相對於基板11的表面實質上垂直。然而,上述側面也可以以相對於表面成銳角的方式傾斜,亦可以以成鈍角的方式傾斜。側面與基板11的表面為銳角時,隔堤13的形狀已知有正錐型,側面與基板11的表面為鈍角時,隔堤13的形狀已知有倒錐型。隔堤13的厚度(高度)的例子為0.3μm至5μm左右。 The shape and arrangement of the bank 13 can be appropriately set according to the specifications of the organic electroluminescence device 1 such as the number of pixels 2 and the resolution, the ease of manufacture, and the like. For example, in FIG. 2, the side surfaces serving as the partitions defined by the bank 13 are substantially perpendicular to the surface of the substrate 11. However, the side surface may be inclined at an acute angle with respect to the surface, or may be inclined at an obtuse angle. When the side surface and the surface of the substrate 11 are at an acute angle, the shape of the bank 13 is known to be a tapered shape, and when the side surface and the surface of the substrate 11 are at an obtuse angle, the shape of the bank 13 is known to be an inverted cone shape. An example of the thickness (height) of the bank 13 is about 0.3 μm to 5 μm.

上述附有隔堤的基板10可以例如藉由在基板11上作為預先形成像素的區域而設定的複數個區域上形成陽極12後再形成隔堤13從而製造。 The substrate 10 with a bank described above can be manufactured, for example, by forming an anode 12 on a plurality of regions set as regions in which pixels are formed in advance on the substrate 11 and then forming a bank 13.

陽極12可以藉由蒸鍍法或塗佈法形成。作為蒸鍍法的例子,可以舉出真空蒸鍍法、離子束蒸鍍法、濺射法、離子鍍法等,藉由濺射法形成時,在基板11上形成包含陽極12的材料的層後,將該層圖案化成複數個陽極 12的圖案即可。藉由塗佈法形成陽極12時,可將包含陽極12的材料的塗佈液通過與複數個陽極12相對應的圖案塗佈在基板上而形成塗佈膜後,使塗佈膜乾燥,從而形成。或者,可以將包含陽極12的材料的塗佈膜形成於基板11上並乾燥後,圖案化成複數個陽極12的圖案。 The anode 12 can be formed by a vapor deposition method or a coating method. Examples of the vapor deposition method include a vacuum vapor deposition method, an ion beam vapor deposition method, a sputtering method, and an ion plating method. When formed by the sputtering method, a layer including a material of the anode 12 is formed on the substrate 11. Then, the layer may be patterned into a pattern of a plurality of anodes 12. When the anode 12 is formed by a coating method, a coating liquid containing a material of the anode 12 may be applied on a substrate in a pattern corresponding to the plurality of anodes 12 to form a coating film, and then the coating film may be dried to thereby form. Alternatively, a coating film containing a material of the anode 12 may be formed on the substrate 11 and dried, and then patterned into a pattern of a plurality of anodes 12.

在陽極12的形成中利用塗佈法時,作為塗佈法的例子,可以舉出噴墨印刷法,除此之外,還可以使用公知的塗佈法,例如狹縫塗佈法、微凹版塗佈法、凹版塗佈法、棒塗法、輥塗法、線棒塗佈法、噴塗法、絲網印刷法、柔版印刷法、膠版印刷法和噴嘴印刷法等。包含陽極12的材料的塗佈液的溶劑只要是能夠溶解陽極12的材料的溶劑即可。 When the coating method is used in the formation of the anode 12, as an example of the coating method, an inkjet printing method may be mentioned. In addition, a known coating method such as a slit coating method or a micro gravure may be used. Coating method, gravure coating method, bar coating method, roll coating method, wire rod coating method, spray coating method, screen printing method, flexographic printing method, offset printing method, nozzle printing method, and the like. The solvent of the coating liquid containing the material of the anode 12 may be any solvent that can dissolve the material of the anode 12.

隔堤13例如利用塗佈法形成。具體而言,可以將包含隔堤13的材料的塗佈液塗佈於形成有陽極12的基板11而形成塗佈膜並乾燥後,將該塗佈膜圖案化成規定的圖案,藉此形成。作為塗佈法的例子,可以舉出旋塗法、狹縫塗佈法等。包含隔堤13的塗佈液的溶劑只要是能夠溶解隔堤13的材料的溶劑即可。 The bank 13 is formed by, for example, a coating method. Specifically, the coating liquid containing the material of the bank 13 may be formed by applying a coating film to the substrate 11 on which the anode 12 is formed to form a coating film and drying, and then patterning the coating film into a predetermined pattern. Examples of the coating method include a spin coating method and a slit coating method. The solvent of the coating liquid containing the bank 13 may be any solvent that can dissolve the material of the bank 13.

如第2圖所示,複數個有機電致發光結構部20在附有隔堤的基板10中,設置於由隔堤13和陽極12形成的凹部內。功能層21除了發光層以外,亦可以具有電洞注入層和電洞傳輸層。具有電洞注入層和電洞傳輸層時,此等從陽極側按此序積層。 As shown in FIG. 2, the plurality of organic electroluminescence structure portions 20 are provided in the recessed portion formed by the bank 13 and the anode 12 in the substrate 10 with the bank. The functional layer 21 may include a hole injection layer and a hole transport layer in addition to the light emitting layer. When a hole injection layer and a hole transport layer are provided, they are laminated in this order from the anode side.

電洞注入層為具有改善從陽極12向發光層 的電洞注入效率的功能的層。電洞注入層的材料可以使用公知的電洞注入材料。作為電洞注入材料的例子,可以舉出氧化釩、氧化鉬、氧化釕和氧化鋁等氧化物;苯基胺化合物、星爆(starburst)型胺化合物、酞菁化合物、無定型碳、聚苯胺和聚亞乙基二氧基噻吩(PEDOT)等聚噻吩衍生物。 The hole injection layer is a layer having a function of improving the hole injection efficiency from the anode 12 to the light emitting layer. As the material of the hole injection layer, a known hole injection material can be used. Examples of hole injection materials include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide; phenylamine compounds, starburst-type amine compounds, phthalocyanine compounds, amorphous carbon, and polyaniline And polythiophene derivatives such as polyethylenedioxythiophene (PEDOT).

電洞注入層的厚度根據所使用的材料而最佳值不同,可以考慮所要求的特性和層的形成容易度等來適當地決定。電洞注入層的厚度為例如1nm至1μm,較佳為2nm至500nm,又更佳為5nm至200nm。 The thickness of the hole injection layer varies depending on the material used. The optimal value can be appropriately determined in consideration of required characteristics, ease of layer formation, and the like. The thickness of the hole injection layer is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and still more preferably 5 nm to 200 nm.

電洞注入層根據需要按照每個像素2的種類,亦即為每個紅色像素、綠色像素和藍色像素設置不同的材料或厚度。從電洞注入層的形成步驟的簡易度的觀點而言,可以以相同材料、相同厚度形成所有的電洞注入層。 The hole injection layer is provided with different materials or thicknesses according to the type of each pixel 2, that is, each of the red pixel, the green pixel, and the blue pixel. From the viewpoint of the simplicity of the formation process of the hole injection layer, all the hole injection layers can be formed with the same material and the same thickness.

電洞傳輸層是具有改善從陽極12、電洞注入層或更靠近陽極12的電洞傳輸層向發光層注入電洞的功能的層。電洞傳輸層的材料可以使用公知的電洞傳輸材料。對於電洞傳輸層的材料的例子,作為電洞傳輸材料,可以舉出聚乙烯基咔唑或其衍生物、聚矽烷或其衍生物、側鏈或主鏈具有芳族胺的聚矽氧烷或其衍生物、吡唑啉或其衍生物、芳基胺或其衍生物、芪或其衍生物、三苯基二胺或其衍生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚芳基胺或其衍生物、聚吡咯或其衍生物、聚(對伸苯基伸乙烯基)或其衍生物、或者聚(2,5-伸噻吩基伸乙烯基)或其衍生物等。此外,還可以舉出日本特開2012-144722號公 報中揭示的電洞傳輸材料。 The hole transport layer is a layer having a function of improving the injection of holes from the anode 12, the hole injection layer, or the hole transport layer closer to the anode 12, into the light emitting layer. As the material of the hole transport layer, a well-known hole transport material can be used. Examples of the material of the hole transport layer include polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, and a polysiloxane having an aromatic amine in a side chain or a main chain. Or its derivative, pyrazoline or its derivative, arylamine or its derivative, stilbene or its derivative, triphenyldiamine or its derivative, polyaniline or its derivative, polythiophene or its derivative , Polyarylamine or a derivative thereof, polypyrrole or a derivative thereof, poly (p-phenylene vinylene) or a derivative thereof, or poly (2,5-thienyl vinylene) or a derivative thereof, and the like. In addition, hole-transporting materials disclosed in Japanese Patent Application Publication No. 2012-144722 can be cited.

電洞傳輸層的厚度根據所使用的材料而最佳值不同,可以使驅動電壓和發光效率達到適度的值之方式而適當地設定。電洞傳輸層的厚度例如為1nm至1μm,較佳為2nm至500nm,又更佳為5nm至200nm。 The thickness of the hole transport layer varies depending on the material used. The optimum value can be appropriately set so that the driving voltage and the light emission efficiency reach appropriate values. The thickness of the hole transport layer is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and still more preferably 5 nm to 200 nm.

電洞傳輸層根據需要按照每個像素2的種類,亦即按照每個紅色像素、綠色像素和藍色像素以不同的材料或厚度來設置。從電洞傳輸層的形成步驟的簡易度的觀點而言,可以以相同材料、相同厚度形成所有的電洞注入層。 The hole transmission layer is provided with different materials or thicknesses according to the type of each pixel 2, that is, each red pixel, green pixel, and blue pixel. From the viewpoint of simplicity of the formation process of the hole transport layer, all hole injection layers can be formed with the same material and the same thickness.

發光層可以設置於電洞傳輸層上。發光層是具有發出預定波長的光的功能的層。發光層通常由主要發出螢光及/或磷光的有機物形成,或者由該有機物與輔助其的摻雜劑等發光材料形成。摻雜劑係為了例如提高發光效率或改變發光波長而添加。發光層所包含的有機物可以為低分子化合物,也可以為高分子化合物。作為構成發光層的發光材料,可以舉出下述色素系材料、金屬絡合物系材料、高分子系材料等主要發出螢光及/或磷光的有機物的材料、以及摻雜劑的材料。 The light emitting layer may be disposed on the hole transport layer. The light emitting layer is a layer having a function of emitting light of a predetermined wavelength. The light-emitting layer is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or is formed of a light-emitting material such as the organic substance and a dopant that assists the organic substance. The dopant is added for the purpose of, for example, improving the light emission efficiency or changing the light emission wavelength. The organic substance contained in the light-emitting layer may be a low-molecular compound or a high-molecular compound. Examples of the light-emitting material constituting the light-emitting layer include materials that mainly emit fluorescent and / or phosphorescent organic materials such as pigment-based materials, metal complex-based materials, and polymer-based materials, and materials of dopants.

作為色素系材料者,可以舉出例如苯甲酸環戊胺(cyclopentamine)或其衍生物、四苯基丁二烯或其衍生物、三苯基胺或其衍生物、噁二唑或其衍生物、吡唑并喹啉或其衍生物、二苯乙烯基苯或其衍生物、二苯乙烯基伸芳基或其衍生物、吡咯或其衍生物、噻吩環化合物、吡 啶環化合物、芘酮或其衍生物、苝或其衍生物、低聚噻吩或其衍生物、噁二唑二聚物或其衍生物、吡唑啉二聚物或其衍生物、喹吖啶酮或其衍生物、香豆素或其衍生物等。 Examples of the pigment-based material include cyclopentamine benzoate or a derivative thereof, tetraphenylbutadiene or a derivative thereof, triphenylamine or a derivative thereof, and oxadiazole or a derivative thereof. , Pyrazoloquinoline or its derivative, distyrylbenzene or its derivative, distyrylarylene or its derivative, pyrrole or its derivative, thiophene ring compound, pyridine ring compound, fluorenone or its Derivatives, hydrazone or its derivatives, oligothiophenes or its derivatives, oxadiazole dimers or its derivatives, pyrazoline dimers or its derivatives, quinacridone or its derivatives, couma Or its derivatives.

作為金屬絡合物系材料者,可以舉出例如具有Tb、Eu、Dy等稀土類金屬或者Al、Zn、Be、Pt、Ir等作為中心金屬,且具有噁二唑、噻二唑、苯基吡啶、苯基苯并咪唑、喹啉結構等作為配體的金屬絡合物。作為金屬絡合物,可以舉出例如銥絡合物、鉑絡合物等具有從三重激發態發光的金屬絡合物、羥基喹啉鋁絡合物、苯并羥基喹啉鈹絡合物、苯并噁唑鋅絡合物、苯并噻唑鋅絡合物、偶氮甲基鋅絡合物、卟啉鋅絡合物、菲咯啉銪絡合物等。 Examples of the metal complex-based material include rare earth metals such as Tb, Eu, and Dy, or Al, Zn, Be, Pt, Ir, etc. as the central metal, and oxadiazole, thiadiazole, and phenyl. Metal complexes such as pyridine, phenylbenzimidazole, and quinoline structures as ligands. Examples of the metal complex include a metal complex having light emission from a triplet excited state such as an iridium complex, a platinum complex, a hydroxyquinoline aluminum complex, a benzohydroxyquinoline beryllium complex, Benzoxazole zinc complex, benzothiazole zinc complex, azomethyl zinc complex, zinc porphyrin complex, phenanthroline hydrazone complex, and the like.

作為高分子系材料者,可以舉出例如聚對伸苯基伸乙烯基或其衍生物、聚噻吩或其衍生物、聚對伸苯基或其衍生物、聚矽烷或其衍生物、聚乙炔或其衍生物、聚茀或其衍生物、聚乙烯基咔唑或其衍生物;將上述色素系材料、金屬絡合物系材料進行高分子化而得到的材料等。 Examples of the polymer material include polyparaphenylene vinylene or its derivative, polythiophene or its derivative, polyparaphenylene or its derivative, polysilane or its derivative, polyacetylene, or Derivatives thereof, polyfluorene or its derivatives, polyvinylcarbazole or its derivatives; materials obtained by polymerizing the pigment-based materials and metal complex-based materials, and the like.

上述發光材料當中,作為發紅色光的材料(以下稱為“紅色發光材料”)者,可以舉出香豆素或其衍生物、噻吩環化合物、以及此等之聚合物、聚對伸苯基伸乙烯基或其衍生物、聚噻吩或其衍生物、聚茀或其衍生物等。其中,較佳為高分子材料的聚對伸苯基伸乙烯基或其衍生物、聚噻吩或其衍生物、聚茀或其衍生物。作為紅色發光材料,還可以舉出日本特開2011-105701號公報中揭示的材料。 Among the above-mentioned light-emitting materials, as a material that emits red light (hereinafter referred to as a "red light-emitting material"), coumarin or a derivative thereof, a thiophene ring compound, a polymer thereof, and polyparaphenylene phenylene Vinyl or its derivative, polythiophene or its derivative, polyfluorene or its derivative, and the like. Among them, polyparaphenylene vinylene or a derivative thereof, polythiophene or a derivative thereof, and polyfluorene or a derivative thereof are preferably polymer materials. Examples of the red light-emitting material include those disclosed in Japanese Patent Application Laid-Open No. 2011-105701.

作為發綠色光的材料(以下稱為“綠色發光材料”)者,可以舉出喹吖啶酮或其衍生物、香豆素或其衍生物、以及此等之聚合物、聚對伸苯基伸乙烯基或其衍生物、聚茀或其衍生物等。其中,較佳為高分子材料的聚對伸苯基伸乙烯基或其衍生物、聚茀或其衍生物。作為綠色發光材料,還可以舉出日本特開2012-036388號公報中揭示的材料。 Examples of green-emitting materials (hereinafter referred to as "green emitting materials") include quinacridone or a derivative thereof, coumarin or a derivative thereof, polymers thereof, and polyparaphenylene terephthalate. Vinyl or its derivative, polyfluorene or its derivative, and the like. Among them, polyparaphenylene vinylene or a derivative thereof, and polyfluorene or a derivative thereof are preferably polymer materials. Examples of the green light-emitting material include those disclosed in Japanese Patent Application Laid-Open No. 2012-036388.

作為發藍色光的材料(以下稱為“藍色發光材料”)者,可以舉出二苯乙烯基伸芳基或其衍生物、噁二唑或其衍生物、以及此等之聚合物、聚乙烯基咔唑或其衍生物、聚對伸苯基或其衍生物、聚茀或其衍生物等。其中,較佳為高分子材料的聚乙烯基咔唑或其衍生物、聚對伸苯基或其衍生物、以及聚茀或其衍生物。作為藍色發光材料,還可以舉出日本特開2012-144722號公報中公開的材料。 Examples of the material that emits blue light (hereinafter referred to as "blue light-emitting material") include distyryl arylidene or a derivative thereof, oxadiazole or a derivative thereof, a polymer thereof, and polyethylene Carbazole or a derivative thereof, polyparaphenylene or a derivative thereof, polyfluorene or a derivative thereof, and the like. Among them, polyvinyl carbazole or a derivative thereof, polyparaphenylene or a derivative thereof, and polyfluorene or a derivative thereof are preferable as a polymer material. Examples of the blue light-emitting material include those disclosed in Japanese Patent Application Laid-Open No. 2012-144722.

作為摻雜劑的材料者,可以舉出例如苝或其衍生物、香豆素或其衍生物、紅熒烯或其衍生物、喹吖啶酮或其衍生物、方酸鎓(squalium)或其衍生物、卟啉或其衍生物、苯乙烯基色素、稠四苯或其衍生物、吡唑酮或其衍生物、十環烯或其衍生物、吩噁嗪酮(phenoxazone)或其衍生物等。 Examples of the material of the dopant include osmium or a derivative thereof, coumarin or a derivative thereof, rubrene or a derivative thereof, quinacridone or a derivative thereof, squalium or Derivatives thereof, porphyrins or derivatives thereof, styryl pigments, fused tetrabenzenes or derivatives thereof, pyrazolones or derivatives thereof, decacyclene or derivatives thereof, phenoxazone or derivatives thereof Things.

在功能層21上,以與功能層21直接接觸的方式設置具備電子注入性的化合物層22。具備電子注入性的化合物層22是包含具備電子注入性的化合物的層,其具有改善從陰極30的電子注入效率的功能。具備電子注入 性的化合物可以根據發光層的種類而適當地選擇最佳化合物。作為具備電子注入性的化合物的例子,可以舉出鹼金屬或鹼土金屬的氧化物、鹵化物、碳酸鹽、或者此等化合物的混合物等。作為鹼金屬的氧化物、鹵化物和碳酸鹽的例子,可以舉出氧化鋰、氟化鋰、氧化鈉、氟化鈉、氧化鉀、氟化鉀、氧化銣、氟化銣、氧化銫、氟化銫、碳酸鋰等。此外,作為鹼土金屬的氧化物、鹵化物、碳酸鹽的例子,可以舉出氧化鎂、氟化鎂、氧化鈣、氟化鈣、氧化鋇、氟化鋇、氧化鍶、氟化鍶、碳酸鎂等。此時,具備電子注入性的化合物層22與隔堤接觸。 On the functional layer 21, a compound layer 22 having an electron injection property is provided so as to be in direct contact with the functional layer 21. The compound layer 22 having an electron injection property is a layer containing a compound having an electron injection property, and has a function of improving the electron injection efficiency from the cathode 30. The compound having an electron injecting property can be appropriately selected depending on the type of the light emitting layer. Examples of the compound having electron-injecting properties include oxides, halides, carbonates of alkali metals or alkaline earth metals, or mixtures of these compounds. Examples of the oxides, halides, and carbonates of alkali metals include lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, rubidium oxide, rubidium fluoride, cesium oxide, and fluorine. Cesium, lithium carbonate, etc. Examples of oxides, halides, and carbonates of alkaline earth metals include magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, strontium oxide, strontium fluoride, and magnesium carbonate. Wait. At this time, the compound layer 22 having electron injection properties is in contact with the bank.

從能夠進一步延長有機電致發光裝置的壽命的觀點而言,構成具備電子注入性的化合物層22的材料較佳為包含除Li以外的元素週期表第1族金屬元素的氟化物,更佳為包含NaF。此外,從能夠進一步延長有機電致發光裝置的壽命的觀點而言,具備電子注入性的化合物層22較佳為具有10nm以下的厚度,更佳為具有2至6nm的厚度。 From the viewpoint of further extending the life of the organic electroluminescent device, the material constituting the compound layer 22 having an electron injecting property is preferably a fluoride containing a metal element of Group 1 of the periodic table other than Li, and more preferably Contains NaF. In addition, from the viewpoint of further extending the life of the organic electroluminescence device, the compound layer 22 having an electron injecting property preferably has a thickness of 10 nm or less, and more preferably has a thickness of 2 to 6 nm.

在具備電子注入性的化合物層22上設置金屬層23,該金屬層23為包含還原性金屬的合金或包含還原性金屬的金屬混合物(金屬混合物不包括合金)的層。在此,包含還原性金屬的合金或包含還原性金屬的金屬混合物是指僅包含2種以上金屬者。作為包含還原性金屬的合金或包含還原性金屬的金屬混合物,可以分別包含1種以上除了還原性金屬和還原性金屬以外的金屬,也可以僅包 含2種以上的還原性金屬。還原性金屬是能夠將具備電子注入性的化合物層22還原的金屬。作為還原性金屬,可以舉出Li、Na、K、Rb、Mg、Ca、Sr、Ba、Al等,其中較佳為Mg、Ca或Ba,更佳為Ba。作為上述合金或金屬混合物中包含的除了還原性金屬以外的金屬,只要具備導電性則沒有特別限定,可以舉出例如Ag等。相對於金屬層23所包含的金屬100at%,金屬層23中的還原性金屬的含量較佳為1at%以上且100at%以下。藉由使還原性金屬的含量達到上述的範圍,能夠延長有機電致發光裝置的壽命。再者,作為還原性金屬,包含選自Mg、Ca和Ba所成群組中的至少1種金屬時,相對於金屬層23中包含的金屬100at%,該金屬的含量較佳為0.5at%以上且40at%以下。藉由使該金屬的含量達到上述的範圍,能夠延長有機電致發光裝置的壽命。在此,金屬層所包含的各金屬的含量,係使在毛坯玻璃上製作金屬層而得到的試驗片溶解於王水中,並使用電感耦合等離子體發光分析法,藉此而可測定。此外,金屬層23較佳為直接設置於具備電子注入性的化合物層22上。但是,在具備電子注入性的化合物層上形成僅由1種還原性金屬構成的層時,還原性金屬因水、氧等而容易劣化。另一方面,本實施形態中,金屬層23為包含還原性金屬的合金或包含還原性金屬的金屬混合物的層,因此含有2種以上的還原性金屬、或者含有除了還原性金屬以外的金屬。此時,1種還原性金屬中的至少一部分容易被其他金屬(除該1種還原性金屬以外的還原性金屬、或者 除還原性金屬以外的金屬)覆蓋,而容易地抑制該1種還原性金屬過度地露出在表面而因水、氧等所發生的劣化。 A metal layer 23 is provided on the compound layer 22 having electron injection properties, and the metal layer 23 is a layer containing an alloy of a reducing metal or a metal mixture containing a reducing metal (the metal mixture does not include an alloy). Here, an alloy containing a reducing metal or a metal mixture containing a reducing metal means one containing only two or more metals. The reducing metal-containing alloy or the reducing metal-containing metal mixture may include one or more metals other than the reducing metal and the reducing metal, or may include only two or more reducing metals. The reducing metal is a metal capable of reducing the compound injection layer 22 having electron injection properties. Examples of the reducing metal include Li, Na, K, Rb, Mg, Ca, Sr, Ba, and Al. Among them, Mg, Ca, or Ba is preferred, and Ba is more preferred. The metal other than the reducing metal contained in the alloy or the metal mixture is not particularly limited as long as it has conductivity, and examples thereof include Ag and the like. The content of the reducing metal in the metal layer 23 is preferably 1 at% or more and 100 at% or less with respect to 100 at% of the metal contained in the metal layer 23. When the content of the reducing metal falls within the above range, the life of the organic electroluminescence device can be extended. When the reducing metal includes at least one metal selected from the group consisting of Mg, Ca, and Ba, the content of the metal is preferably 0.5 at% relative to 100 at% of the metal contained in the metal layer 23. Above and below 40at%. When the content of the metal is within the above range, the life of the organic electroluminescence device can be extended. Here, the content of each metal included in the metal layer can be measured by dissolving a test piece obtained by making a metal layer on a raw glass in aqua regia and using an inductively coupled plasma emission analysis method. The metal layer 23 is preferably provided directly on the compound layer 22 having electron injection properties. However, when a layer composed of only one type of reducing metal is formed on a compound layer having electron injection properties, the reducing metal is easily deteriorated by water, oxygen, or the like. On the other hand, in the present embodiment, since the metal layer 23 is a layer containing an alloy of a reducing metal or a metal mixture containing a reducing metal, it contains two or more kinds of reducing metals or metals other than reducing metals. At this time, at least a part of the one reducing metal is easily covered with another metal (a reducing metal other than the one reducing metal, or a metal other than the reducing metal), and the one reducing property is easily suppressed. The metal is excessively exposed on the surface and deteriorates due to water, oxygen, and the like.

從能夠進一步延長有機電致發光裝置的壽命的觀點而言,金屬層23的厚度較佳為10nm以下,更佳為1至6nm。 From the viewpoint of being able to further extend the life of the organic electroluminescence device, the thickness of the metal layer 23 is preferably 10 nm or less, and more preferably 1 to 6 nm.

在金屬層23上設有陰極30。作為陰極30的材料,較佳為功函數小、容易向金屬層23注入電子、且電導率高的材料。此外,如本實施形態中說明,有機電致發光裝置1從陽極12側提取光時,為了使從發光層發射的光被陰極30反射至陽極12側,作為陰極30的材料,較佳為可見光反射率高的材料。陰極30可以使用過渡金屬和元素週期表第13族金屬等。再者,作為陰極30,可以使用包含導電性金屬氧化物和導電性有機物等的透明導電性陰極。 A cathode 30 is provided on the metal layer 23. The material of the cathode 30 is preferably a material having a small work function, which is easy to inject electrons into the metal layer 23, and has a high electrical conductivity. In addition, as explained in this embodiment, when the organic electroluminescence device 1 extracts light from the anode 12 side, in order to reflect the light emitted from the light-emitting layer to the anode 12 side by the cathode 30, the material of the cathode 30 is preferably visible light. Highly reflective material. The cathode 30 can use a transition metal, a Group 13 metal of the periodic table, or the like. As the cathode 30, a transparent conductive cathode containing a conductive metal oxide, a conductive organic substance, or the like can be used.

陰極30的厚度可以考慮電導率、耐久性而適當地設定。陰極30的厚度例如為10nm至10μm,較佳為20nm至1μm,又更佳為50nm至500nm。 The thickness of the cathode 30 can be appropriately set in consideration of electrical conductivity and durability. The thickness of the cathode 30 is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.

本實施形態中,陰極30形成在設有複數個像素2的顯示區域的整面上。亦即,陰極30作為複數個像素2共用的陰極30不僅形成於發光層上,也形成於隔堤13上。 In this embodiment, the cathode 30 is formed on the entire surface of the display area where the plurality of pixels 2 are provided. That is, the cathode 30 is formed not only on the light emitting layer but also on the bank 13 as the cathode 30 shared by the plurality of pixels 2.

第1圖和第2圖中省略圖示,但在有機電致發光裝置1的陰極30上通常設有密封基板。此外,有機電致發光裝置1可以具備例如在有機電致發光面板顯示器 面板中具備的公知構成。 Although the illustration is omitted in FIGS. 1 and 2, a sealing substrate is usually provided on the cathode 30 of the organic electroluminescence device 1. In addition, the organic electroluminescence device 1 may have a known structure included in, for example, an organic electroluminescence panel display panel.

上述構成的有機電致發光裝置1中,各像素2內的結構,亦即陽極12、有機電致發光結構部20和陰極30中的像素區域的部分構成有機電致發光元件部。因此,有機電致發光裝置1具有以隔堤13分隔的複數個有機電致發光元件部,該有機電致發光元件部為以共用基板11和陽極12的方式一體地連接的構成。 In the organic electroluminescence device 1 configured as described above, the structure in each pixel 2, that is, the portion of the pixel region in the anode 12, the organic electroluminescence structure portion 20, and the cathode 30 constitutes an organic electroluminescence element portion. Therefore, the organic electroluminescence device 1 has a plurality of organic electroluminescence element sections separated by a bank 13, and the organic electroluminescence element sections are integrally connected to each other so as to share the substrate 11 and the anode 12.

接著,針對有機電致發光裝置1的製造方法進行說明。在此,針對準備附有隔堤的基板10後的有機電致發光裝置1的製造方法進行說明。有機電致發光裝置1的製造方法具備:在以附有隔堤的基板10的隔堤所限定的分區中依序形成包含發光層的功能層21、具備電子注入性的化合物層22、金屬層23和陰極30的步驟。以下,針對依序具備有電洞注入層、電洞傳輸層、發光層作為功能層21的有機電致發光裝置1的製造方法進行說明。 Next, a method for manufacturing the organic electroluminescence device 1 will be described. Here, a method for manufacturing the organic electroluminescence device 1 after preparing the substrate 10 with a bank will be described. A method of manufacturing the organic electroluminescence device 1 includes sequentially forming a functional layer 21 including a light-emitting layer in a zone defined by a bank of a substrate 10 with a bank, a compound layer 22 having an electron injection property, and a metal layer. 23 and cathode 30 steps. Hereinafter, a method for manufacturing an organic electroluminescence device 1 including a hole injection layer, a hole transport layer, and a light emitting layer as the functional layer 21 in this order will be described.

具體而言,形成電洞注入層之情形,在被隔堤和陽極包圍的凹部的陽極12上,滴加包含電洞注入材料的塗佈液而形成塗佈膜後,使塗佈膜乾燥,藉此形成電洞注入層。 Specifically, when a hole injection layer is formed, a coating liquid containing a hole injection material is dropped on the anode 12 in a recessed portion surrounded by a bank and the anode to form a coating film, and then the coating film is dried. This forms a hole injection layer.

作為塗佈法,可以舉出例如噴墨印刷法。但是,只要是能夠在上述凹部內形成層的塗佈法,則可以使用其他公知的塗佈法,例如微凹版塗佈法、凹版塗佈法、棒塗法、輥塗法、線棒塗佈法、噴塗法、絲網印刷法、柔版印刷法、膠版印刷法和噴嘴印刷法,較佳為使用絲網印 刷法、柔版印刷法、膠版印刷法和噴嘴印刷法。 Examples of the coating method include an inkjet printing method. However, as long as it is a coating method capable of forming a layer in the recessed portion, other known coating methods such as a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, and a wire rod coating method may be used. Method, spraying method, screen printing method, flexographic printing method, offset printing method, and nozzle printing method, and screen printing method, flexographic printing method, offset printing method, and nozzle printing method are preferably used.

作為塗佈液中使用的溶劑,只要能夠溶解電洞注入材料則沒有限定,可以舉出例如氯仿、二氯甲烷、二氯乙烷等氯化物溶劑;四氫呋喃等醚溶劑;甲苯、二甲苯等芳族烴溶劑;丙酮、甲乙酮等酮溶劑;乙酸乙酯、乙酸丁酯、乙基溶纖劑乙酸酯等酯溶劑;環己基苯、癸基苯、十二烷基苯、二乙基苯、戊基苯、二戊基苯、四氫萘、異丙苯、異丙基甲苯、十氫萘、二乙基苯、三甲基苯、三甲基苯、四甲基苯、丁基苯、4-甲基苯甲醚等具有含有至少一個以上取代基的苯環的溶劑等。此外,為了良好地溶解電洞注入材料,有包含極性溶劑之情形。作為極性溶劑,使用常規的溶劑,沒有特別的限定,可以舉出例如醇類、酮類、二醇酯類、二醇醚類、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮、1,3-二甲基-2-咪唑烷酮和二甲基亞碸、N-環己基-2-吡咯烷酮等。 The solvent used in the coating liquid is not limited as long as it can dissolve the hole injection material, and examples thereof include chloride solvents such as chloroform, methylene chloride, and dichloroethane; ether solvents such as tetrahydrofuran; and aromatic solvents such as toluene and xylene. Hydrocarbon solvents; ketone solvents such as acetone, methyl ethyl ketone; ester solvents such as ethyl acetate, butyl acetate, ethyl cellosolve acetate; cyclohexylbenzene, decylbenzene, dodecylbenzene, diethylbenzene, Amylbenzene, dipentylbenzene, tetrahydronaphthalene, cumene, cumene, decahydronaphthalene, diethylbenzene, trimethylbenzene, trimethylbenzene, tetramethylbenzene, butylbenzene, A solvent and the like having a benzene ring containing at least one or more substituents, such as 4-methylanisole. In addition, in order to dissolve the hole injection material well, a polar solvent may be contained. As the polar solvent, a conventional solvent is used without particular limitation, and examples thereof include alcohols, ketones, glycol esters, glycol ethers, N, N-dimethylformamide, and N, N-diamine. Methylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidone and dimethylsulfinyl, N-cyclohexyl-2-pyrrolidone, and the like.

塗佈膜的乾燥方法只要能夠乾燥塗佈膜則沒有限定,可以舉出真空乾燥和加熱乾燥等。 The method for drying the coating film is not limited as long as the coating film can be dried, and examples include vacuum drying and heat drying.

接著,形成電洞傳輸層時,將包含電洞傳輸材料的塗佈液滴加至上述凹部內的電洞注入層上而形成塗佈膜後,使塗佈膜乾燥,由此形成電洞傳輸層。溶劑和乾燥方法的例子可以與電洞注入層的情況相同。 Next, when the hole transport layer is formed, a coating liquid containing a hole transport material is dropped onto the hole injection layer in the recess to form a coating film, and the coating film is dried to form a hole transport. Floor. Examples of the solvent and the drying method may be the same as in the case of the hole injection layer.

接著,在電洞傳輸層上形成發光層。發光層藉由塗佈法形成。具體而言,將包含應形成發光層的發光材料的塗佈液滴加至上述凹部內而形成塗佈膜後,使塗 佈膜乾燥,由此形成發光層。 Next, a light emitting layer is formed on the hole transport layer. The light emitting layer is formed by a coating method. Specifically, a coating liquid containing a light-emitting material to be formed into a light-emitting layer is dropped into the recess to form a coating film, and then the coating film is dried to form a light-emitting layer.

作為塗佈法,可以例示出噴墨印刷法,亦可以利用在電洞注入層的情況中所例示出的其他的公知塗佈法。塗佈液中使用的溶劑只要能夠溶解發光材料則沒有限定,可以與形成電洞注入層時所例示出的溶劑相同。塗佈膜的乾燥方法與電洞注入層的情況相同,只要能夠乾燥塗佈膜則沒有限定,可以舉出真空乾燥和加熱乾燥等。 As the coating method, an inkjet printing method may be exemplified, or other known coating methods exemplified in the case of a hole injection layer may be used. The solvent used in the coating liquid is not limited as long as it can dissolve the light-emitting material, and may be the same as the solvent exemplified when the hole injection layer is formed. The method for drying the coating film is the same as in the case of the hole injection layer, and is not limited as long as the coating film can be dried, and examples include vacuum drying and heat drying.

接著,在發光層上形成具備電子注入性的化合物層22。作為具備電子注入性的化合物層22的形成方法,可以例示出噴墨印刷法、蒸鍍法,還可以利用在電洞注入層的情況中所例示出的其他的公知塗佈法。作為蒸鍍法,可以舉出真空蒸鍍法、離子束蒸鍍法、濺射法、離子鍍法。在噴墨印刷法的情況下,將包含應形成具備電子注入性的化合物層22的電子注入材料的塗佈液滴加至上述凹部內而形成塗佈膜後,使塗佈膜乾燥,由此形成具備電子注入性的化合物層22。塗佈液中使用的溶劑只要能夠溶解電子注入材料則沒有限定,可以與形成電洞注入層時所例示出的溶劑相同。塗佈膜的乾燥方法與電洞注入層的情況相同,只要能夠乾燥塗佈膜則沒有限定,可以舉出真空乾燥和加熱乾燥等。 Next, a compound layer 22 having an electron injection property is formed on the light emitting layer. Examples of the method for forming the compound layer 22 having an electron injection property include an inkjet printing method and a vapor deposition method, and other known coating methods exemplified in the case of a hole injection layer may be used. Examples of the vapor deposition method include a vacuum vapor deposition method, an ion beam vapor deposition method, a sputtering method, and an ion plating method. In the case of the inkjet printing method, a coating liquid containing an electron-injecting material that should form the compound layer 22 having electron-injecting properties is dropped into the recessed portion to form a coating film, and then the coating film is dried. A compound layer 22 having electron injection properties is formed. The solvent used in the coating liquid is not limited as long as it can dissolve the electron injection material, and may be the same as the solvent exemplified when the hole injection layer is formed. The method for drying the coating film is the same as in the case of the hole injection layer, and is not limited as long as the coating film can be dried, and examples include vacuum drying and heat drying.

接著,在具備電子注入性的化合物層22上形成金屬層23。作為金屬層23的形成方法,可以藉由蒸鍍法或塗佈法形成。作為蒸鍍法,可以舉出真空蒸鍍法、離子束蒸鍍法、濺射法、離子鍍法等。此外,針對還原性 金屬層的合金或還原性金屬層的金屬混合物,可以使用包含2種以上金屬的原料來形成,也可以準備多種包含1種金屬的原料並使用多種原料來形成。使用多種原料來形成金屬層時,將多種原料藉由真空蒸鍍法進行共蒸鍍,藉此也可以形成金屬層。此時,例如使用Mg、Ca或Ba且使用除Mg、Ca或Ba以外的金屬作為原料時,Mg、Ca或Ba的蒸鍍速度相對於除了Mg、Ca或Ba以外的金屬的蒸鍍速度之比較佳為0.04至1.0,更佳為0.04至0.5,又更佳為0.05至0.5。 Next, a metal layer 23 is formed on the compound layer 22 having an electron injection property. The method for forming the metal layer 23 can be formed by a vapor deposition method or a coating method. Examples of the vapor deposition method include a vacuum vapor deposition method, an ion beam vapor deposition method, a sputtering method, and an ion plating method. The alloy of the reducing metal layer or the metal mixture of the reducing metal layer may be formed using a raw material containing two or more metals, or a plurality of raw materials containing one metal may be prepared and formed using a plurality of raw materials. When a plurality of raw materials are used to form a metal layer, a plurality of raw materials are co-evaporated by a vacuum evaporation method, whereby a metal layer can also be formed. At this time, for example, when Mg, Ca, or Ba is used and a metal other than Mg, Ca, or Ba is used as a raw material, the vapor deposition rate of Mg, Ca, or Ba is larger than the vapor deposition rate of a metal other than Mg, Ca, or Ba. More preferably, it is 0.04 to 1.0, more preferably 0.04 to 0.5, and even more preferably 0.05 to 0.5.

接著,在金屬層上形成陰極。作為陰極30的形成方法,可以藉由蒸鍍法或塗佈法來形成。藉由蒸鍍法形成時,可以舉出真空蒸鍍法、離子束蒸鍍法、濺射法、離子鍍法等。 Next, a cathode is formed on the metal layer. The method for forming the cathode 30 can be formed by a vapor deposition method or a coating method. When forming by a vapor deposition method, a vacuum vapor deposition method, an ion beam vapor deposition method, a sputtering method, an ion plating method, etc. are mentioned.

以上述方式得到的有機電致發光裝置1可以被密封構件密封。此時,密封構件以覆蓋有機電致發光裝置的方式配置。密封構件的材料沒有特別限定,可以使用例如玻璃、或者選自鋁、銅及鐵中的金屬、或者包含此等金屬中的至少1種的合金。 The organic electroluminescence device 1 obtained as described above can be sealed by a sealing member. At this time, the sealing member is arranged so as to cover the organic electroluminescence device. The material of the sealing member is not particularly limited, and for example, glass, a metal selected from aluminum, copper, and iron, or an alloy containing at least one of these metals can be used.

本實施形態的有機電致發光裝置可以適用於有機電致發光顯示器、有機電致發光照明等顯示元件。 The organic electroluminescence device of this embodiment can be applied to display elements such as organic electroluminescence displays and organic electroluminescence lighting.

以上,說明了本發明的多種實施形態,但不限定於所例示的多種實施形態,意圖包括由申請專利範圍所示、以及與申請專利範圍為等同含義和範圍內的所有變更。 As mentioned above, although various embodiment of this invention was described, it is not limited to the various embodiment illustrated, and it is intended that the scope of a patent application, and all the changes within the meaning and range equivalent to the scope of patent application are included.

例如,有機電致發光裝置的構成不限定於第1圖和第2圖中例示的構成。 For example, the configuration of the organic electroluminescence device is not limited to the configurations illustrated in FIGS. 1 and 2.

有機電致發光裝置只要在具備電子注入性的化合物層22與陰極30之間具有金屬層23即可,該金屬層23為包含至少1種還原性金屬的合金或包含至少1種還原性金屬的金屬混合物的層。例示有機電致發光元件能夠採取的層構成的例子。此外,下述說明中,亦有包括第一實施形態和第二實施形態的構成之情形。 The organic electroluminescence device only needs to have a metal layer 23 between the compound layer 22 having an electron injection property and the cathode 30, and the metal layer 23 is an alloy containing at least one reducing metal or an alloy containing at least one reducing metal. Layer of metal mixture. An example of a layer configuration that can be taken by an organic electroluminescence element is exemplified. In addition, the following description may include the configuration of the first embodiment and the second embodiment.

a)陽極/電洞注入層/發光層/具備電子注入性的化合物層/金屬層/陰極 a) Anode / hole injection layer / light emitting layer / compound layer with electron injection property / metal layer / cathode

b)陽極/電洞注入層/電洞傳輸層/發光層/具備電子注入性的化合物層/金屬層/陰極 b) Anode / hole injection layer / hole transport layer / light emitting layer / compound layer with electron injection property / metal layer / cathode

c)陽極/發光層/具備電子注入性的化合物層/金屬層/陰極 c) Anode / Light-emitting layer / Compound layer with electron injection property / Metal layer / Cathode

再者,a)和b)中,電洞注入層及/或電洞傳輸層具有阻塞電子傳輸的功能時,此等層有被稱為電子阻擋層之情形。電子阻擋層具有阻塞電子傳輸的功能係可藉由例如製作僅流通電子電流的有機電致發光元件,並根據測定到電流值的減少來確認阻塞電子傳輸的效果。此外,也可以不同於設置於電洞注入層及/或電洞傳輸層之間,而將電子阻擋層設置於陽極與發光層之間。 Furthermore, in a) and b), when the hole injection layer and / or the hole transport layer have a function of blocking electron transmission, these layers may be referred to as an electron blocking layer. The electron blocking layer has a function of blocking electron transmission. For example, the effect of blocking the electron transmission can be confirmed by making an organic electroluminescence element that only flows an electron current, and measuring a decrease in the current value. In addition, instead of being provided between the hole injection layer and / or the hole transport layer, an electron blocking layer may be provided between the anode and the light emitting layer.

進而,有機電致發光元件可以具有單層的發光層,也可以具有2層以上的發光層。在上述a)至c)的層構成中的任一者中,將在陽極與陰極之間配置的積層體記作“結構單元A”時,作為具有2層發光層的有機電致發 光元件的構成,可以舉出下述d)所示的層構成。此外,存在2個(結構單元A)的層構成可以彼此相同,也可以不同。 Furthermore, the organic electroluminescence element may have a single light emitting layer, or may have two or more light emitting layers. In any of the above-mentioned layers a) to c), when the laminated body arranged between the anode and the cathode is referred to as "structural unit A", it is used as an The structure includes a layer structure shown in the following d). In addition, the two (structure unit A) layer structures may be the same or different from each other.

d)陽極/(結構單元A)/電荷產生層/(結構單元A)/陰極 d) Anode / (structural unit A) / charge generation layer / (structural unit A) / cathode

在此,電荷產生層是指藉由施加電場而產生電洞和電子的層。作為電荷產生層,可以舉出例如包含氧化釩、銦錫氧化物(Indium Tin Oxide:簡稱ITO)、氧化鉬等的薄膜。 Here, the charge generating layer refers to a layer that generates holes and electrons by applying an electric field. Examples of the charge generation layer include a thin film containing vanadium oxide, indium tin oxide (ITO), molybdenum oxide, and the like.

將“(結構單元A)/電荷產生層”記作“結構單元B”時,作為具有3層以上發光層的有機電致發光元件的構成,可以舉出下述e)所示的層構成。 When “(structural unit A) / charge generating layer” is referred to as “structural unit B”, as a configuration of an organic electroluminescent device having three or more light emitting layers, a layer configuration shown in e) below can be cited.

e)陽極/(結構單元B)x/(結構單元A)/陰極 e) anode / (structural unit B) x / (structural unit A) / cathode

符號“x”表示2以上的整數,“(結構單元B)x”表示將(結構單元B)積層x段而得到的積層體。再者,存在複數個(結構單元B)的層構成可以相同,也可以不同。 The symbol "x" represents an integer of 2 or more, and "(structural unit B) x" represents a laminated body obtained by stacking (structural unit B) x segments. In addition, the layer structure having a plurality of (structural units B) may be the same or different.

也可以不設置電荷產生層而直接積層複數個發光層,從而構成有機電致發光元件。 The organic electroluminescence element may be formed by directly stacking a plurality of light emitting layers without providing a charge generating layer.

至此為止的說明中,說明了將陽極配置於基板側的例子,但也可以將陰極配置於基板側。此時,例如在基板上製作a)至e)的各有機電致發光元件時,在基板上從陰極(各構成a)至e)的右側)起依序積層各層即可。 In the description so far, the example in which the anode is disposed on the substrate side has been described, but the cathode may be disposed on the substrate side. At this time, for example, when fabricating each of the organic electroluminescent elements a) to e) on the substrate, each layer may be sequentially laminated on the substrate from the cathode (the right side of each structure a) to e)).

[實施例]     [Example]    

以下,基於實施例和比較例對本發明進行進一步具體的說明,但本發明不因下述實施例而受到任何限定。 Hereinafter, the present invention will be described in more detail based on examples and comparative examples. However, the present invention is not limited to the following examples.

[實施例1]     [Example 1]    

作為實施例1,如第1圖所示,製造在基板上依序積層有陽極、電洞注入層、電洞傳輸層、發光層、具備電子注入性的化合物層、屬於包含還原性金屬的合金或包含還原性金屬的金屬混合物(金屬混合物不包括合金)的層的金屬層、以及陰極的有機電致發光元件。將實施例1的有機電致發光元件稱為有機電致發光元件Al。以下,具體地說明有機電致發光元件Al的製造方法。 As Example 1, as shown in FIG. 1, an anode, a hole injection layer, a hole transport layer, a light emitting layer, a compound layer having an electron injection property, and an alloy containing a reducing metal were sequentially laminated on a substrate. Or a metal layer including a layer of a metal mixture of a reducing metal (the metal mixture does not include an alloy), and an organic electroluminescence element of a cathode. The organic electroluminescence element of Example 1 is referred to as an organic electroluminescence element Al. Hereinafter, a method for producing the organic electroluminescent element Al will be specifically described.

<基板和陽極>     <Substrate and anode>    

準備玻璃基板作為有機電致發光元件Al的基板。在玻璃基板上,以預定的圖案形成ITO薄膜作為陽極。ITO薄膜藉由濺射法形成,其膜厚為45nm。 A glass substrate was prepared as a substrate of the organic electroluminescence element Al. An ITO film is formed on the glass substrate in a predetermined pattern as an anode. The ITO thin film is formed by a sputtering method, and its film thickness is 45 nm.

在如此之基板上,使用感光性樹脂,藉由光刻法形成格子狀的隔堤。隔堤的厚度為1.0μm,開口部為正錐形狀(間隔壁側面與基板所成的角為銳角)。開口的形狀為近似橢圓形狀,如第1圖所示,第一軸方向X的寬度為50μm,第二軸方向Y的寬度為200μm。 On such a substrate, a grid-like bank is formed by a photolithography method using a photosensitive resin. The thickness of the bank is 1.0 μm, and the opening portion has a forward tapered shape (the angle formed by the side surface of the partition wall and the substrate is an acute angle). The shape of the opening is an approximately elliptical shape. As shown in FIG. 1, the width in the first axial direction X is 50 μm, and the width in the second axial direction Y is 200 μm.

<電洞注入層>     <Hole injection layer>    

將電洞注入材料藉由噴墨印刷法塗佈於被ITO薄膜上以隔堤分區的像素內,藉此形成厚度為65nm的塗膜。以下,將實施例1中使用的電洞注入材料稱為電洞注入材料 α1。在連接有乾式泵的真空乾燥室內,在調整至10℃的溫控台上載置基板,減壓至成為約10Pa,從而乾燥塗佈液。進一步,將溫控台的溫度調整至230℃,同時在大氣壓下進行15分鐘燒製,形成電洞注入層。 The hole injection material was applied to the pixels partitioned by the banks on the ITO film by an inkjet printing method, thereby forming a coating film having a thickness of 65 nm. Hereinafter, the hole injection material used in Example 1 is referred to as a hole injection material α1. In a vacuum drying chamber to which a dry pump is connected, a substrate is placed on a temperature controller adjusted to 10 ° C, and the pressure is reduced to about 10 Pa to dry the coating liquid. Further, the temperature of the temperature control table was adjusted to 230 ° C., and firing was performed under atmospheric pressure for 15 minutes to form a hole injection layer.

<電洞傳輸層>     <Hole transport layer>    

將溶解有電洞傳輸材料α2的塗佈液藉由噴墨法塗佈於電洞注入層上,在連接有乾式泵的真空乾燥室內,在調整至10℃的溫控台載置基板,減壓至成為約5Pa,從而乾燥塗佈液,得到膜厚20nm的塗膜。將設置有該塗膜的玻璃基板在氮環境(惰性環境)下,利用加熱板在190℃下加熱60分鐘來蒸發溶劑後,自然冷卻至室溫,得到電洞傳輸層。 The coating solution in which the hole transporting material α2 was dissolved was applied to the hole injection layer by an inkjet method, and the substrate was placed in a vacuum drying chamber connected to a dry pump in a temperature-controlled table adjusted to 10 ° C. The coating liquid was dried by pressing to about 5 Pa to obtain a coating film having a film thickness of 20 nm. The glass substrate provided with the coating film was heated at 190 ° C. for 60 minutes under a nitrogen environment (inert environment) to evaporate the solvent, and then naturally cooled to room temperature to obtain a hole transport layer.

<發光層>     <Luminescent layer>    

將溶解有高分子系材料(主要發射螢光及/或磷光的有機物的材料)α3的塗佈液藉由噴墨印刷法塗佈於電洞傳輸層上,在連接有乾式泵的真空乾燥室內,在調整至10℃的溫控臺上載置基板,減壓至成為約20Pa,從而乾燥塗佈液,得到膜厚65nm的塗膜。將設有該塗膜的玻璃基板在氮環境(惰性環境)下,利用加熱板在180℃下加熱10分鐘來蒸發溶劑後,自然冷卻至室溫,得到發光層。 A coating solution in which a polymer-based material (a material that mainly emits fluorescent and / or phosphorescent organic substances) α3 is dissolved is applied to a hole transport layer by an inkjet printing method, and a vacuum drying chamber connected to a dry pump The substrate was placed on a temperature control platform adjusted to 10 ° C., and the pressure was reduced to about 20 Pa to dry the coating solution to obtain a coating film having a thickness of 65 nm. The glass substrate provided with the coating film was heated at 180 ° C. for 10 minutes under a nitrogen environment (inert environment) to evaporate the solvent, and then naturally cooled to room temperature to obtain a light-emitting layer.

<具備電子注入性的化合物層>     <Compound layer having electron injection property>    

將形成有發光層的玻璃基板轉移至蒸鍍腔室中,在發 光層上形成具備電子注入性的化合物層。具體而言,排氣至蒸鍍腔室內的真空度成為1.0×10-5Pa以下,藉由真空蒸鍍法在發光層上形成膜厚3nm的氟化鈉(NaF)層。 The glass substrate on which the light emitting layer is formed is transferred to a vapor deposition chamber, and a compound layer having an electron injecting property is formed on the light emitting layer. Specifically, the degree of vacuum exhausted into the evaporation chamber was 1.0 × 10 -5 Pa or less, and a sodium fluoride (NaF) layer having a thickness of 3 nm was formed on the light-emitting layer by a vacuum evaporation method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法共蒸鍍Ba和Al,形成膜厚為1.7nm且混合有Ba和Al的金屬層。Ba和Al的蒸鍍速度為:Ba為0.3Å/s、Al為0.7Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba and Al were co-evaporated on a compound layer having electron injection properties by a vacuum deposition method to form a metal layer having a film thickness of 1.7 nm and a mixture of Ba and Al. The evaporation rates of Ba and Al are: 0.3 Å / s for Ba and 0.7 Å / s for Al.

<陰極>     <Cathode>    

形成金屬層後,在同一蒸鍍腔室內形成陰極。具體而言,在還原性金屬層上藉由真空蒸鍍法蒸鍍Al,形成膜厚為100nm的陰極。 After the metal layer is formed, a cathode is formed in the same evaporation chamber. Specifically, Al was deposited on the reducing metal layer by a vacuum deposition method to form a cathode having a film thickness of 100 nm.

<密封構件>     <Sealing member>    

形成陰極後,在氮環境(惰性環境)下,將所得的有機電致發光元件A1用玻璃密封。 After forming the cathode, the obtained organic electroluminescence element A1 was sealed with glass under a nitrogen environment (inert environment).

[實施例2]     [Example 2]    

將實施例2的有機電致發光元件稱為有機電致發光元件A2。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A2。 The organic electroluminescence element of Example 2 is referred to as an organic electroluminescence element A2. An organic electroluminescence element A2 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,通過真空蒸鍍法共蒸鍍Ba和Al,形成膜厚為1.7nm且混合有Ba和Al的金屬層。Ba和Al的蒸鍍速度為:Ba為0.1Å/s、Al為0.9Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba and Al are co-deposited on a compound layer having electron injection properties by a vacuum evaporation method to form a metal layer having a film thickness of 1.7 nm and a mixture of Ba and Al. The evaporation rates of Ba and Al are: 0.1 Å / s for Ba and 0.9 Å / s for Al.

[實施例3]     [Example 3]    

將實施例3的有機電致發光元件稱為有機電致發光元件A3。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A3。 The organic electroluminescence element of Example 3 is referred to as an organic electroluminescence element A3. An organic electroluminescence element A3 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,通過真空蒸鍍法共蒸鍍Ba和Al,形成膜厚為1.7nm且混合有Ba和Al的金屬層。Ba和Al的蒸鍍速度為:Ba為0.04Å/s、Al為0.96Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba and Al are co-deposited on a compound layer having electron injection properties by a vacuum evaporation method to form a metal layer having a film thickness of 1.7 nm and a mixture of Ba and Al. The evaporation rates of Ba and Al were: 0.04Å / s for Ba and 0.96Å / s for Al.

[實施例4]     [Example 4]    

將實施例4的有機電致發光元件稱為有機電致發光元件A4。除了以下述方法形成具備電子注入性的化合物層之外,以與實施例1相同的方式製造有機電致發光元件A4。 The organic electroluminescence element of Example 4 is referred to as an organic electroluminescence element A4. An organic electroluminescence element A4 was manufactured in the same manner as in Example 1 except that a compound layer having electron injection properties was formed in the following method.

<具備電子注入性的化合物層>     <Compound layer having electron injection property>    

將形成有發光層的玻璃基板轉移至蒸鍍腔室中,在發光層上形成具備電子注入性的化合物層。具體而言,排氣至蒸鍍腔室內的真空度成為1.0×10-5Pa以下,藉由真空蒸鍍法在發光層上形成膜厚4nm的氟化鈉(NaF)層。 The glass substrate on which the light emitting layer is formed is transferred to a vapor deposition chamber, and a compound layer having an electron injecting property is formed on the light emitting layer. Specifically, the degree of vacuum exhausted into the evaporation chamber was 1.0 × 10 -5 Pa or less, and a 4 nm-thick sodium fluoride (NaF) layer was formed on the light-emitting layer by a vacuum evaporation method.

[實施例5]     [Example 5]    

將實施例5的有機電致發光元件稱為有機電致發光元件A5。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A5。 The organic electroluminescence element of Example 5 is referred to as an organic electroluminescence element A5. An organic electroluminescent element A5 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法共蒸鍍Ba和Ag,形成膜厚為1.7nm且混合有Ba和Ag的金屬層。Ba和Ag的蒸鍍速度為:Ba為0.29Å/s、Ag為0.71Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba and Ag are co-evaporated on a compound layer having electron injection properties by a vacuum evaporation method to form a metal layer having a film thickness of 1.7 nm and a mixture of Ba and Ag. The evaporation rates of Ba and Ag are: Ba is 0.29 Å / s, and Ag is 0.71 Å / s.

[實施例6]     [Example 6]    

將實施例6的有機電致發光元件稱為有機電致發光元件A6。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A6。 The organic electroluminescence element of Example 6 is referred to as an organic electroluminescence element A6. An organic electroluminescent element A6 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法共蒸鍍Mg和Al,形成膜厚為3.9nm且混合有Mg和Al的金屬層。Mg和Al的蒸鍍速度為:Mg為0.13Å/s、Al為0.87Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, a metal layer having a film thickness of 3.9 nm and a mixture of Mg and Al was formed on the compound layer having electron injection properties by co-depositing Mg and Al by a vacuum evaporation method. The evaporation rates of Mg and Al are: Mg is 0.13 Å / s and Al is 0.87 Å / s.

[實施例7]     [Example 7]    

將實施例7的有機電致發光元件稱為有機電致發光元件A7。除了以下述方法形成陰極之外,以與實施例1相同的方式製造有機電致發光元件A7。 The organic electroluminescence element of Example 7 is referred to as an organic electroluminescence element A7. An organic electroluminescent element A7 was manufactured in the same manner as in Example 1 except that the cathode was formed in the following method.

<陰極>     <Cathode>    

形成金屬層後,在同一蒸鍍腔室內形成陰極。具體而言,在金屬層上藉由真空蒸鍍法蒸鍍Ag,形成膜厚為100nm的陰極。 After the metal layer is formed, a cathode is formed in the same evaporation chamber. Specifically, Ag was deposited on the metal layer by a vacuum deposition method to form a cathode having a film thickness of 100 nm.

[實施例8]     [Example 8]    

將實施例8的有機電致發光元件稱為有機電致發光元件A8。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A8。 The organic electroluminescence element of Example 8 is referred to as an organic electroluminescence element A8. An organic electroluminescent element A8 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室 內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法共蒸鍍Mg、Al和Ag,形成膜厚為3.9nm且混合有Mg、Al和Ag的金屬層。Mg、Al和Ag的蒸鍍速度為:Mg為0.13Å/s、Al為0.44Å/s、Ag為0.43Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, a metal layer having a film thickness of 3.9 nm and a mixture of Mg, Al, and Ag was formed on the compound layer having electron injection properties by co-depositing Mg, Al, and Ag by a vacuum deposition method. The evaporation rates of Mg, Al and Ag are: Mg is 0.13 Å / s, Al is 0.44 Å / s, and Ag is 0.43 Å / s.

[實施例9]     [Example 9]    

將實施例9的有機電致發光元件稱為有機電致發光元件A9。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件A9。 The organic electroluminescence element of Example 9 is referred to as an organic electroluminescence element A9. An organic electroluminescent element A9 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法共蒸鍍Mg和Ag,形成膜厚為3.9nm且混合有Mg和Ag的金屬層。Mg和Ag的蒸鍍速度為:Mg為0.13Å/s、Ag為0.87Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Mg and Ag are co-evaporated on a compound layer having electron injection properties by a vacuum evaporation method to form a metal layer having a film thickness of 3.9 nm and a mixture of Mg and Ag. The evaporation rates of Mg and Ag are: Mg is 0.13 Å / s, and Ag is 0.87 Å / s.

[比較例1]     [Comparative Example 1]    

將比較例1的有機電致發光元件稱為有機電致發光元件B1。除了不形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件B1。 The organic electroluminescence element of Comparative Example 1 is referred to as an organic electroluminescence element B1. An organic electroluminescent element B1 was manufactured in the same manner as in Example 1 except that a metal layer was not formed.

[比較例2]     [Comparative Example 2]    

將比較例2的有機電致發光元件稱為有機電致發光元件B2。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件B2。 The organic electroluminescence element of Comparative Example 2 is referred to as an organic electroluminescence element B2. An organic electroluminescent element B2 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法蒸鍍Ba,形成膜厚為1nm的金屬層。Ba的蒸鍍速度為0.3Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba was vapor-deposited on a compound layer having an electron injection property by a vacuum deposition method to form a metal layer having a film thickness of 1 nm. The evaporation rate of Ba is 0.3 Å / s.

[比較例3]     [Comparative Example 3]    

將比較例3的有機電致發光元件稱為有機電致發光元件B3。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件B3。 The organic electroluminescence element of Comparative Example 3 is referred to as an organic electroluminescence element B3. An organic electroluminescence element B3 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法蒸鍍Ba,形成膜厚為2nm的金屬層。Ba的蒸鍍速度為0.3Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Ba was vapor-deposited on a compound layer having an electron injection property by a vacuum deposition method to form a metal layer having a film thickness of 2 nm. The evaporation rate of Ba is 0.3 Å / s.

[比較例4]     [Comparative Example 4]    

將比較例4的有機電致發光元件稱為有機電致發光元 件B4。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件B4。 The organic electroluminescence element of Comparative Example 4 is referred to as an organic electroluminescence element B4. An organic electroluminescent element B4 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法蒸鍍Mg,形成膜厚為1nm的金屬層。Mg的蒸鍍速度為0.3Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, Mg was vapor-deposited on a compound layer having an electron injection property by a vacuum vapor deposition method to form a metal layer having a film thickness of 1 nm. The deposition rate of Mg is 0.3 Å / s.

[比較例5]     [Comparative Example 5]    

將比較例5的有機電致發光元件稱為有機電致發光元件B5。除了以下述方法形成金屬層之外,以與實施例1相同的方式製造有機電致發光元件B5。 The organic electroluminescence element of Comparative Example 5 is referred to as an organic electroluminescence element B5. An organic electroluminescent element B5 was manufactured in the same manner as in Example 1 except that the metal layer was formed in the following method.

<金屬層>     <Metal layer>    

形成具備電子注入性的化合物層後,在同一蒸鍍腔室內在具備電子注入性的化合物層上形成金屬層。具體而言,在具備電子注入性的化合物層上,藉由真空蒸鍍法蒸鍍Mg,形成膜厚為3nm的金屬層。Mg的蒸鍍速度為0.3Å/s。 After forming a compound layer having an electron injection property, a metal layer is formed on the compound layer having an electron injection property in the same vapor deposition chamber. Specifically, a metal layer having a film thickness of 3 nm was formed on a compound layer having an electron injecting property by depositing Mg by a vacuum vapor deposition method. The deposition rate of Mg is 0.3 Å / s.

<元件壽命>     <Component life>    

驅動以實施例1至8和比較例1至5的方式製造的各 個有機電致發光元件,測定元件壽命。所得結果示於表1。 Each of the organic electroluminescence devices manufactured in Examples 1 to 8 and Comparative Examples 1 to 5 was driven, and the device lifetime was measured. The results obtained are shown in Table 1.

此外,將驅動開始時的亮度作為100時,元件壽命以自開始驅動起至亮度降低至95為止的時間表示的LT95如此之指標進行評估。元件壽命的測定藉由以8000cd/cm2的初始亮度驅動有機電致發光元件A1來進行。 In addition, when the luminance at the start of driving is 100, the element lifetime is evaluated by such an index as LT95, which is the time from the start of driving until the luminance decreases to 95. The element lifetime was measured by driving the organic electroluminescent element A1 at an initial brightness of 8000 cd / cm 2 .

Claims (8)

一種有機電致發光裝置,其具備:基板、設置於前述基板上的隔堤、設置於以前述基板上的前述隔堤所限定的分區中的陽極、設置於前述陽極上的功能層、設置於前述功能層上的具備電子注入性的化合物層、設置於前述具備電子注入性的化合物層上的金屬層、以及設置於前述金屬層上的陰極,其中,前述功能層具有發光層,前述金屬層為包含還原性金屬的合金或包含還原性金屬的金屬混合物的層。     An organic electroluminescence device includes a substrate, a bank provided on the substrate, an anode provided in a zone defined by the bank on the substrate, a functional layer provided on the anode, and a The functional layer includes a compound layer having an electron injection property, a metal layer provided on the compound layer having an electron injection property, and a cathode provided on the metal layer, wherein the functional layer includes a light emitting layer and the metal layer. It is a layer containing an alloy of a reducing metal or a metal mixture containing a reducing metal.     如申請專利範圍第1項所述之有機電致發光裝置,其中,前述具備電子注入性的化合物層包含除Li以外的元素週期表第1族金屬元素的氟化物。     The organic electroluminescence device according to item 1 of the scope of patent application, wherein the compound layer having an electron injecting property contains a fluoride of a Group 1 metal element of the periodic table other than Li.     如申請專利範圍第1或2項所述之有機電致發光裝置,其中,前述具備電子注入性的化合物層包含NaF。     The organic electroluminescence device according to claim 1 or 2, wherein the compound layer having electron injection properties includes NaF.     如申請專利範圍第1至3項中任一項所述之有機電致發光裝置,其中,前述還原性金屬為Mg、Ca或Ba。     The organic electroluminescence device according to any one of claims 1 to 3, wherein the reducing metal is Mg, Ca, or Ba.     如申請專利範圍第1至4項中任一項所述之有機電致發光裝置,其中,前述具備電子注入性的化合物層具有 10nm以下的厚度。     The organic electroluminescence device according to any one of claims 1 to 4, wherein the compound layer having electron injection properties has a thickness of 10 nm or less.     如申請專利範圍第1至5項中任一項所述之有機電致發光裝置,其中,前述金屬層具有10nm以下的厚度。     The organic electroluminescence device according to any one of claims 1 to 5, wherein the metal layer has a thickness of 10 nm or less.     一種顯示元件,其具備申請專利範圍第1至6項中任一項所述之有機電致發光裝置。     A display element includes the organic electroluminescence device according to any one of claims 1 to 6.     一種有機電致發光裝置的製造方法,其為製造申請專利範圍第1至6項中任一項所述之有機電致發光裝置的方法,其藉由噴墨印刷法形成前述功能層。     A method for manufacturing an organic electroluminescence device, which is a method for manufacturing the organic electroluminescence device according to any one of claims 1 to 6, and forms the aforementioned functional layer by an inkjet printing method.    
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