TW201810425A - Vacuum processing device, vacuum processing method, and storage medium - Google Patents

Abstract

To provide a vacuum processing device for substrates, capable of obtaining high through-put and capable of reducing production costs. A device configured so as to comprise: a plurality of first processing containers 41 and a plurality of second processing containers 41, that each store a substrate, form a vacuum atmosphere, and perform processing; a load port D1 common to the plurality of first processing containers 41 and second processing containers 41 and having arranged therein conveyance containers 11 having the substrates stored therein; a substrate conveyance mechanism 22 that conveys the substrates between the load port D1 and the plurality of first processing containers 41 and the plurality of second processing containers 41; a first gas supply mechanism that simultaneously supplies a first processing gas in the plurality of first processing containers 41 and processes the substrates; and a second gas supply mechanism that simultaneously supplies a second processing gas in the plurality of second processing containers 41 and processes the substrates.

Description

Vacuum processing device, vacuum processing method and memory medium

The present invention relates to a vacuum processing apparatus, a vacuum processing method, and a memory medium storing a computer program used by the vacuum processing apparatus.

In the semiconductor manufacturing process, a vacuum processing apparatus is used to supply various gases to a semiconductor wafer (hereinafter referred to as a "wafer") which is a substrate placed in a vacuum atmosphere, and performs vacuum processing. As the vacuum processing, there are For example, a film formation process by CVD (Chemical Vapor Deposition), and a film formation process by CVD may be performed by laminating a plurality of types of films. In order to manufacture a film called 3D NAND, Flash memory has tended to increase the number of laminated films in recent years. With the increase of the number of laminated films, the time required for film formation processing of one wafer tends to become longer.

In order to prevent a decrease in the productivity of a vacuum processing apparatus due to an increase in the film-forming processing time as described above, it is considered to increase the number of processing containers that are separately stored and processed in the vacuum processing apparatus, and to use these processing containers. In the process, each wafer is subjected to a film formation process. Patent Documents 1 and 2 describe a vacuum in which a plurality of processing vessels are provided as described above. Processing device.

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5134575

[Patent Document 2] Japanese Patent Laid-Open No. 2014-68009

However, when gas processing is performed individually for a plurality of processing vessels, equipment required for the gas processing, such as a gas supply system, is required for each processing vessel, so that the manufacturing cost of the vacuum processing apparatus becomes high. The above-mentioned Patent Documents 1 and 2 do not describe a method for solving such problems.

The present invention has been made by researchers in view of such circumstances, and it is an object of the present invention to provide a vacuum processing apparatus capable of achieving high productivity while suppressing manufacturing costs.

The substrate processing apparatus of the present invention is characterized by comprising: a plurality of first processing containers and a plurality of second processing containers, each of which stores a substrate and forms a vacuum atmosphere for processing; and a loading port on which the substrate is stored Container and share it A substrate transfer mechanism for transferring the substrate between the loading port and the plurality of first processing containers and the plurality of second processing containers; and a first gas supply mechanism A first processing gas is simultaneously supplied to the plurality of first processing vessels to process the substrate; and a second gas supply mechanism is a second processing gas to be simultaneously supplied to the plurality of second processing vessels to process the substrate Substrate.

The substrate processing method of the present invention is characterized by comprising: a process of forming a vacuum atmosphere by storing substrates in a plurality of first processing containers; and a process of forming a vacuum atmosphere by storing substrates in a plurality of second processing containers; The process of placing the transfer container containing the substrate into a loading port for the first processing container and the second processing container in common; the loading port and the plurality of first processing containers and the plurality of second processing containers A process of transferring the substrate between them; a process of simultaneously supplying the first processing gas to the plurality of first processing containers to process the substrate; and a process of simultaneously supplying the second processing gas to the plurality of second processing containers And the process of processing the aforementioned substrate.

The memory medium of the present invention stores a computer program used in a vacuum processing device. The vacuum processing device supplies processing gas to a substrate for processing. The memory medium is characterized in that: The aforementioned computer program is composed of a group of steps for implementing the above-mentioned substrate processing method.

According to the present invention, the substrate is transferred from the common loading port to the plurality of first processing containers and the plurality of second processing containers, and the first processing gas is simultaneously supplied to the plurality of first processing containers to process the substrate, and the substrate is processed. The second processing gas is simultaneously supplied to the plurality of second processing containers to process the substrate. In this way, since the substrate can be processed simultaneously in the plurality of processing containers and can be processed individually in the plurality of first processing containers and the plurality of second processing containers, the productivity of the device can be improved. In addition, since the first gas supply mechanism is commonly used for each of the first processing vessels and the second gas supply mechanism is commonly used for each of the second processing vessels, it is possible to suppress an increase in the manufacturing cost of the vacuum processing apparatus.

W‧‧‧ Wafer

1‧‧‧ film forming device

2A ~ 2D‧‧‧wafer processing unit

22‧‧‧ transfer agency

3‧‧‧ Load lock module

35‧‧‧ transfer agency

4 (4A ~ 4D) ‧‧‧Film forming module

41‧‧‧handling container

44‧‧‧mounting table

73‧‧‧processing space

100‧‧‧Control Department

[Fig. 1] A plan view of a film forming apparatus of a vacuum processing apparatus of the present invention.

[Fig. 2] A longitudinal sectional side view of the film forming apparatus.

[Fig. 3] A perspective view of a wafer processing unit provided in the aforementioned film forming apparatus.

4 is a schematic view of the wafer processing unit.

5 is a longitudinal sectional side view of a film forming module constituting the wafer processing unit.

FIG. 6 is a process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 7 is a process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 8 is a process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 9 is a process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 10 is a process diagram showing a process of processing each wafer in a wafer processing unit.

[FIG. 11] A process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 12 is a process diagram showing a process of processing each wafer in a wafer processing unit.

13 is a process diagram showing a process of processing each wafer in a wafer processing unit.

14 is a process diagram showing a process of processing each wafer in a wafer processing unit.

FIG. 15 is a schematic diagram showing a wafer processing unit having another configuration.

[Fig. 16] A plan view showing a wafer processing unit of another configuration.

[FIG. 17] A plan view showing a wafer processing unit having another configuration.

Referring to the plan view of FIG. 1 and the side view of FIG. The film forming apparatus 1 of the vacuum processing apparatus of the present invention. The film forming apparatus 1 is configured to linearly connect the carrier block D1, the receiving block D2, and the processing block D3 in the horizontal direction. In the following description of the film forming apparatus 1, the arrangement direction of the blocks D1 to D3 is set to the front-rear direction, and the block D1 side is set to the front side. The right and left sides in the description are the right and left sides when viewed from the block D1 toward D3, respectively.

In the carrier block D1, there are provided four mounting tables 12 on the left and right sides, each of which carries a large number of wafers W, and a carrier container D1. The carrier block D1 is configured to be mounted on the mounting table. A transfer container 11 of 12 is carried into a load port where wafers W are carried out. On the side wall of the carrier block D1 opposite to the transport container 11 placed on the mounting table 12, a transport port opening in the transport chamber 13 formed in the carrier block D1 is formed, and the door 14 can be opened and closed freely. . The transfer chamber 13 is a normal-pressure atmospheric atmosphere, and the transfer chamber 13 is provided with a transfer mechanism 15 for the wafer W. The transfer mechanism 15 is configured as a articulated arm that is movable in the left-right direction and can be raised and lowered, and transfers the wafer W between the transfer chamber 13 and the transfer container 11.

In the receiving block D2, there is provided a transfer chamber 16 which is a normal-pressure atmospheric atmosphere, and in the transfer chamber 16, a mounting portion 17 on which the wafer W is mounted is provided. The transfer mechanism 15 of the carrier block D1 described above can access the placement unit 17 to receive and deliver wafers W.

Next, the processing block D3 will be described. In this processing block D3, there are provided a wafer transfer area 21 and four wafer processing units 2 which are a normal-pressure atmosphere. The conveyance area 21 is formed in the center part of the left-right direction of the processing block D3, and is extended to the front-back direction. In the transfer area 21, a transfer mechanism 22 provided with a wafer W. The transfer mechanism 22 is a mounting unit 17 in the above-mentioned receiving and receiving block D2 and a load lock module 3 provided after each wafer processing unit 2 described later. Intermitt wafer W. The conveying mechanism 22 is composed of a guide rail 23 extending forward and backward, a support post 24 moving back and forth along the guide rail 23, and a lifting platform 25 provided on the support post 24 to vertically move up and down. Freely; a rotating table 26 is rotatable around a vertical axis on the lifting table 25; and a support section 27 is freely advancing and retreating on the rotating table 26 and supports the back surface of the wafer W.

Next, the wafer processing unit 2 will be described. The wafer processing unit 2 is configured so that a SiN (silicon nitride) film and a SiO ₂ (silicon oxide) film can be alternately laminated on the wafer W to form a film. _Two wafer processing units are provided on the left and right of the transfer area 21. . The two wafer processing units 2 provided on the left and right sides of the transfer area 21 are aligned along the front-rear direction and face each other across the transfer area 21. In order to distinguish the four wafer processing units 2 from each other, they are shown as 2A to 2D. Among the four wafer processing units 2, the wafer processing unit 2 on the right front is 2A, the wafer processing unit 2 on the right rear is 2B, the wafer processing unit 2 on the left front is 2C, and the left The rear wafer processing unit 2 is set to 2D.

Each of the wafer processing units 2A to 2D has the same configuration as each other. Here, the wafer processing unit 2A will be representatively described with reference to FIG. 3. The wafer processing unit 2A is provided with 3 load-lock modules 3 and 6 film-forming modules 4. The 3 load-lock modules 3 are arranged to form a row and face each other at intervals in the vertical direction. Transfer area 21. In addition, on the opposite side of the transport area 21 of each load lock module 3, it is along the front and rear. Two film-forming modules 4 are arranged in the direction, whereby the six film-forming modules 4 constituting the wafer processing unit 2A are arranged to be stacked in three layers in the vertical direction, and two rows are formed in the front and rear.

The load-locking module 3 is formed, for example, in a generally pentagonal shape when viewed from above. One side of the pentagonal side is arranged along the transport area 21, and a side wall of the load-locking module 3 constituting the side is opened in In the form of the transfer area 21, a transfer port 31 for the wafer W is formed. Among the pentagonal sides, the two sides that are not adjacent to the side on which the transfer port 31 is formed are each connected to a processing container 41 constituting the film formation module 4, and the transfer port 32 of the wafer W is The opening is formed in the processing container 41. The transfer ports 31 and 32 of the load lock module 3 are configured to be opened and closed by gate valves 33 and 34, respectively.

In this way, in one load-locking module 3, two film-forming modules 4 are connected to the opposite side of the transport area 21, and the two film-forming modules 4 are arranged in the front-rear direction. When the load lock module 3 and the two film-forming modules 4 connected to each other in this manner are set as a processing section, the wafer W is transported in the processing section and is subjected to film-forming processing as described later. Therefore, the two film-forming modules 4 are film-forming modules 4 grouped with each other in order to process the same wafer W. In addition, as described above, since the wafer processing units 2A to 2D are provided, a plurality of processing units are arranged along the front, back, left, and right of the transfer area 21, and face each other across the transfer area 21, respectively.

In the load lock module 3, a supply port and an exhaust port of air (not shown) are provided. With the supply and exhaust of this air, the load is locked In the module 3, the load lock chamber is configured to switch between a normal pressure atmosphere and a vacuum atmosphere. The supplied gas is not limited to air, and may be, for example, an inert gas. In the load lock module 3, a transfer mechanism 35 for a wafer W, which is a articulated arm, is provided. The first conveying mechanism 35, which is the conveying mechanism 35, enters into the processing container 41 of each film forming module 4 connected to the load lock module 3 and the above-mentioned conveying area 21. In each film forming module 4 and the conveying mechanism, Receive wafer W between 22.

Each film forming module 4 has the same configuration as each other. As described above, the film forming module 4 includes a processing container 41 storing a wafer W, a plasma is formed in the processing container 41 storing the wafer W, and a processing gas is supplied. A SiO ₂ film and a SiN film are formed on the wafer W by CVD. After the film formation process, a cleaning gas is supplied to remove the SiO ₂ film and the SiN film formed in the processing container 41, and the inside of the processing container 41 is cleaned. Further, after the wafer W is stored for film formation, the SiO ₂ film is formed on the wall surface of the processing container 41 in order to stably perform the film formation process on the wafer W.

Among the six film-forming modules 4, three film-forming modules 4 stacked on the front side are collectively referred to as a film-forming module group 40A, and three film-forming modules 4 stacked on the rear side are collectively referred to as a film-forming module group 40A. It is the film-forming module group 40B. Hereinafter, for convenience of description, each film-forming module 4 constituting the film-forming module group 40A may be described as 4A, and each film-forming module 4 constituting the film-forming module group 40B may be described as 4B. The processing container 41 constituting each film forming module 4A is a first processing container, and the processing container 41 constituting each film forming module 4B is a second processing container. The film-forming treatment and cleaning of each of the films described above are for each of the film-forming module groups 40A. The film-forming modules 4A are performed simultaneously and between the film-forming modules 4B constituting the film-forming module group 40B. In addition, one of the film formation module groups 40A and 40B is subjected to a film formation process, and the other is cleaned in parallel with the film formation process. That is, the time interval during which the film formation process is performed and the time interval during which the cleaning is performed overlap.

Next, referring to FIG. 4, an example of the piping formed for the film-forming module groups 40A and 40B in order to perform the film-forming treatment and cleaning as described above will be described. Each of the film-forming modules 4A constituting the film-forming module group 40A is connected to the downstream end of each of the gas supply pipes 51A and 52A, and each of the film-forming modules 4B forming the film-forming module group 40B is respectively The downstream ends of the gas supply pipes 51B and 52B are connected. The gas supply pipes 51A, 52A, 51B, and 52B are respectively provided with valves V1, V2, V3, and V4.

The upstream side of each gas supply pipe 51A and 51B merges to form a manifold. The upstream side of the manifold is divided into 6 branches to form a branch pipe. The upstream side of each branch pipe is connected to SiH through valves V5 to V10 respectively. ₄ (monosilane) gas supply source 53, NO ₂ (nitrogen dioxide) gas supply source 54, NH ₃ (ammonia) gas supply source 55, Ar (argon) gas supply source 56, N ₂ (nitrogen) gas supply source 57 He (helium) gas supply source 58. SiH ₄ gas, NO ₂ gas, and NH ₃ gas are processing gases that are used to form SiO ₂ films and SiN films, that is, film-forming gases. Ar gas is a gas for plasma formation, and N ₂ gas and He gas are carrier gases with respect to a process gas. The valves V5 to V10 and the gas supply sources 53 to 58 constitute a first gas supply mechanism and a second gas supply mechanism that are film-forming gas supply mechanisms. As described later, the film-forming gas supply mechanism can independently supply gas to the film-forming module groups 40A and 40B by opening and closing each valve V.

The gas supply pipe 51A is connected to the downstream end of the gas supply pipe 91A on the downstream side of the valve V1, and the upstream end of the gas supply pipe 91A is connected to the N ₂ gas supply source 92 through the valve V11. Further, in each gas supply pipe 51B, the downstream end of the gas supply pipe 91B is connected to the downstream side of the valve V3, and the upstream end of the gas supply pipe 91B is connected to the N ₂ gas supply source 94 through the valve V12. From the plurality of N ₂ gas N ₂ gas supply source 92 is supplied, the deposition system for flushing module group 40A of each of the processing vessel 41, the flushing gas in the module group 41 forming each of the processing vessel 40B .

In addition, the upstream sides of the respective gas supply pipes 52A and 52B merge to form a manifold. The upstream side of the manifold is branched into two via the remote plasma forming unit 59 to form a branch pipe. They are connected to a NF ₃ (nitrogen trifluoride) gas supply source 95 and an Ar gas supply source 96 via valves V13 and V14, respectively. The remote plasma forming unit 59 excites the NF _3, which is a cleaning gas in the processing container 41, and the Ar gas, which is a gas for plasma formation, to be plasmatized, and is supplied to the downstream side as a remote plasma. The gas supply sources 95 and 96, the remote plasma forming unit 59, and the valves V13 and V14 constitute a purge gas supply mechanism. As will be described later, the cleaning gas supply mechanism 90 can supply gas to the film-forming module groups 40A and 40B independently of each other by opening and closing each valve V. In addition, although three N ₂ gas supply sources 57, 92, and 94 are provided, and two Ar gas supply sources 56, 96 are provided in order to prevent complication of the piping configuration diagram, they may be provided separately. One of these N ₂ gas supply sources and Ar gas supply sources forms a piping system.

Furthermore, the film-forming module groups 40A and 40B are each provided with grounded high-frequency power sources 61A and 61B. The high-frequency power sources 61A and 61B are connected to each of the film-forming module groups 4A and 40B of the film-forming module group 40A via high-frequency supply lines 62 respectively branched from the high-frequency power sources 61A and 61B. Each of the film forming modules 4B is provided with a matching device at each branched supply line 62. A matching device provided on the supply line 62 branched from the high-frequency power supply 61A is indicated as 63A, and a matching device provided on the supply line 62 branched from the high-frequency power supply 61B is indicated as 63B.

As shown in FIGS. 2 and 3, the above-mentioned matchers 63A and 63B are provided on the film forming modules 4A and 4B (the film forming modules 4A and 4B are connected to, for example, the same load lock module 3 ) Are formed on the central part of each row before and after, and are arranged near the corresponding film-forming modules 4A, 4B. That is, the matchers 63A and 63B are respectively arranged in three layers. The high-frequency power sources 61A and 61B, the remote plasma forming unit 59, each gas supply source, and each valve V are provided on the side of the load lock module 3 and the film formation module 4 shown in FIG. 1, for example. Machine setting area 64. In the drawings other than FIG. 1, the display of the machine setting area 64 is omitted.

Returning to FIG. 4 to continue the description, the film forming modules 4A and 4B are each connected to the upstream end of an exhaust pipe 65 for exhausting the inside of the processing container 41. The downstream side of each exhaust pipe 65 connected to the film-forming module 4A and the downstream side of each exhaust pipe 65 connected to the film-forming module 4B converge to form a common exhaust pipe 66, respectively. Each of the common exhaust pipes 66 includes a valve and the like, and is provided with a pressure adjustment section for adjusting the pressure in the processing container 41 by adjusting the exhaust flow rate. About the The pressure adjustment unit refers to 67A for the person who is connected to the common exhaust pipe 66 connected to the film forming module 4A, and 67B to the person for the common exhaust pipe that is connected to the film forming module 4B. . On the downstream side of the pressure adjustment sections 67A and 67B, the common exhaust pipes 66 are connected to each other, and are connected to an exhaust mechanism 68 constituted by a vacuum pump or the like.

To further explain the above-mentioned exhaust pipe 65 and the common exhaust pipe 66, as shown in FIG. 2 and FIG. 3, each exhaust pipe 65 is arranged horizontally from the processing container 41 of each film forming module 4. Pull out in the direction. Each common exhaust pipe 66 is provided with a connection pipe 97 and a main pipe 98. Each connection pipe 97 connects the exhaust pipes 65 of the laminated film-forming module 4A and the exhaust pipes 65 of the laminated film-forming module 4B in a vertical direction. The alignment direction of the film-forming modules 4 extends. The main pipe 98 is pulled out from the central portion in the longitudinal direction of the connection pipe 97 in the lateral direction and bent and extends downward. The main pipe 98 is provided with pressure adjustment sections 67A and 67B. In this way, the common exhaust pipe 66 is formed so as to be guided in the vertical direction.

Next, the structure of the film-forming module 4 is demonstrated with reference to the longitudinal cross-sectional side view of FIG. As described above, since each of the six film-forming modules 4 has the same configuration as each other, FIG. 5 schematically shows one film-forming module 4A. In the figure, 42 is a transfer port of the wafer W opened on the side wall of the processing container 41, and is configured to be opened and closed freely by the above-mentioned gate valve 34. 43 in the figure is a ring-shaped protrusion formed on the inner side wall of the processing container 41 on the upper side of the transport port 42 so as to protrude inward.

In the processing container 41, a mounting table 44 for horizontal wafers W is provided. A heater 45 is embedded in the mounting table 44 and is independent of each other. The central portion and the peripheral portion of the wafer W are ground-heated; and an electrode 46 is used to form a capacitive coupling plasma together with a gas shower head 75 described later. 47 in the figure is a support portion that supports the mounting table 44 from the lower side, penetrates through the opening portion 48 on the lower side of the processing container 41 and extends downward, and is connected to the lifting mechanism 49. In the figure, 71 is attached to the flange of the support portion 47 below the opening portion 48. 72 in the figure is a bellows which can be expanded and contracted, and is connected to the edge of the flange 71 and the opening 48 to keep the inside of the processing container 41 airtight.

The raising and lowering mechanism 49 and the mounting table 44 are capable of receiving the wafer W at a position lower than the protrusion 43 (shown by a broken line in the figure) and a processing position at the upper side surrounded by the protrusion 43 (in the figure) As indicated by the solid line). The wafer W is transferred between the mounting table 44 in the transfer position and the transfer mechanism 35 of the load lock module 3 described above that has entered the processing container 41 through the transfer port 42. This receiving and receiving is performed through the support pin of the wafer W which can be raised and lowered freely from the surface of the mounting table 44, but the illustration of the support pin is omitted.

A flat circular processing space 73 surrounded by the mounting table 44, the top of the processing container 41, the side wall of the processing container 41 and the protruding portion 43 is formed so that the mounting table 44 moves to the processing position. In the figure, 74 is an annular exhaust space formed in the side wall of the processing container 41 so as to surround the processing space 73. A plurality of exhaust ports 75 are formed on the side wall of the processing container 41. The exhaust ports 75 are opened in the processing space 73 and are connected to the exhaust space 74. The above-mentioned exhaust pipe 65 is connected to the exhaust space 74 from the outside of the processing container 41 and can exhaust the processing space 73.

75 in the figure is a gas shower head which constitutes the top of the processing container 41 and faces the mounting table 44. The upper part of the center of the gas shower head 75 is raised to form a flow path forming portion 76. 77 in the figure is a gas outlet port perforated below the gas shower head 75 and is connected to a flat gas diffusion chamber 78 formed in the gas shower head 75. The central portion of the gas diffusion chamber 78 is drawn upward in the flow path forming portion 76 to form a gas introduction path 79. The gas supply pipe 52A is connected to the upstream side of the gas introduction path 79. Therefore, the NF ₃ gas and the Ar gas that have been plasmatized by the remote plasma forming unit 59 can be discharged from the gas discharge port 77 through the gas introduction path 79 and the gas diffusion chamber 78.

81 in the figure is a flat gas diffusion chamber provided in the gas shower head 75 so as to overlap the gas diffusion chamber 78. 82 in the figure is a plurality of communication paths which are dispersedly formed to connect the gas diffusion chambers 81 and 78. 83 in the figure is a vertical gas flow path formed so that an inner edge portion of the gas diffusion chamber 81 is drawn upward in the flow path forming portion 76 and surrounds the gas introduction path 79. 84 in the figure is a spiral gas introduction path 84 which is formed on the upstream side of the vertical gas flow path 83 and surrounds the upper part of the gas introduction path 79. The above-mentioned gas supply pipe 51A is connected to the upstream side of the gas introduction path 84. Therefore, each gas supplied from the gas supply sources 53 to 58 and 92 is discharged from the gas discharge port 77 through the gas introduction path 84 and the gas diffusion chambers 81 and 78.

In the figure, 85 is a cover member that surrounds the periphery of the above-mentioned flow path forming portion 76, and forms an upper space 86 defined above the gas shower head 75. The gas shower head 75 is connected to the above-mentioned high-frequency supply line 62. That is, the gas shower head 75 is configured as an electrode, and together with the mounting table 44 A capacitive coupling plasma is formed in the processing space 73. The supply line 62 penetrates the cover member 85 in the horizontal direction, and is connected to the gas shower head 75 in the upper space 86. By forming the supply line 62 so as to extend in the horizontal direction as described above, the height required for laminating the film formation module 4 is suppressed, and the size of the film formation apparatus 1 is prevented from increasing.

In the upper space 86, a fin 87 is provided on the gas shower head 75. 88 in the figure is a fan mechanism provided in the cover member 85 on the outside of the upper space 86 and sends air to the fins 87 through a ventilation path formed in the cover member 85 to suppress the temperature rise of the gas shower head 75. Thereby, in the laminated film-forming module 4, the influence of the heat of the gas nozzle 75 of the lower film-forming module 4 on the processing of the wafer W of the upper film-forming module 4 can be suppressed. In addition, a pipe may be wound around the gas shower head 75 to circulate a cooling fluid such as water, thereby cooling the gas shower head 75.

In addition, the piping system shown in FIG. 5 is an excerpt from a part involved in the gas treatment of the film forming module 4A in the piping system shown in FIG. 4. Therefore, the valve V3, the gas supply source 94, and the N ₂ gas (flushing gas) that controls the gas supply source 94 to control whether the respective gases of the gas supply sources 53 to 58 are supplied to the film formation module 4B are not shown. The valve V12 of the membrane module 4B is supplied or not. The valves V3 and V12 are valves corresponding to the valves V1 and V11 of FIG. 5, respectively, and the gas supply source 94 corresponds to the gas supply source 92 of FIG. That is, in the piping system, the part that participates in the gas treatment of the film formation module 4B can be represented as having substantially the same configuration as the part that participates in the gas treatment of the film formation module 4B shown in FIG. The point of difference in FIG. 5 is that the valves V3 and V12 are provided in place of the valves V1 and V11 and the gas supply source 94 is used instead of the gas supply source 92.

As shown in FIG. 1, this film forming apparatus 1 is provided with a computer, that is, a control unit 100. The control unit 100 includes a program storage unit (not shown), and the program storage unit stores a program in which a command (step group) is programmed in order to perform film formation processing by the film formation apparatus 1 described later. Specifically, the above-mentioned program is used to control the operation of each of the transport mechanisms 15, 22, and 35, the switches of the gate valves 33, and Switching of the valve V, switching on and off of the high-frequency power source 61, formation of the remote plasma by the remote plasma forming unit 59, raising and lowering of the mounting table 44 by the lifting mechanism 49, and wafers by the heater 45 Various operations such as adjustment of the temperature of W, pressure adjustment in each processing container 41 caused by the pressure adjustment sections 67A, 67B. The program is stored in a program storage unit in a state of being stored in a storage medium such as a hard disk, an optical disk, a magneto-optical disk, or a memory card.

Next, an example of a film forming process in the film forming apparatus 1 will be described. This processing example is a film formation process in the manufacturing process of a 3D NAND flash memory. To be more specific, a SiO ₂ film and a SiN film, which is a sacrificial film, are alternately formed on the wafer W. One SiO ₂ film and one SiN film laminated on the SiO ₂ film are grouped into one group. When the group is set to one layer, the film formation process is performed to form 96 layers on the wafer W. Regarding the 96 layers, when the first layer is provided from the lower side, the first layer to the 48th layer are formed by the film forming module 4A, and the 49th layer to the 96th layer are formed by the film forming mold. Group 4B is formed. The reason for forming the first layer to the 96th layer using the two film-forming modules 4 in this manner will be described later.

The wafer W is transferred from the transfer container 11 toward the wafer processing units 2A to 2D in the same manner, and the wafer processing units 2A to 2D are processed in the same manner. Therefore, the following description is representative An example will be described in which the wafer W is transferred from the transfer container 11 to the wafer processing unit 2A for processing. In the description, referring to FIGS. 6 to 14 as appropriate, it shows the state where each gas in the wafer processing unit 2A is supplied to each film forming module 4 and the crystals in the processing container 41 of each film forming module 4. The presence or absence of circle W. In these figures, hatching is given to closed valves, and hatching is not given to opened valves. In addition, each pipe through which a gas flows and a supply line 62 for supplying a high frequency are indicated by adding arrows.

First, the wafer W is not carried into each film forming module 4 of the wafer processing unit 2A. The transfer port 42 of each film forming module 4 is closed by a gate valve 34, and the processing container 41 of each film forming module 4 is closed. The interior is cleaned, the valves V are closed, and the high-frequency power sources 61A and 61B are closed. From this state, the pressure is adjusted by the pressure adjustment units 67A and 67B and the exhaust mechanism 68 so that the inside of the processing container 41 of each film forming module 4 becomes a vacuum atmosphere of a predetermined pressure. In each film forming module 4, the mounting table 44 is moved to a processing position to form a processing space 73, and the mounting table 44 is heated to a predetermined temperature by a heater 45.

Next, the valves V1, V5, V6, V8 to V10 are opened, and SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas are supplied to the processing space 73 in the processing container 41 of each film forming module 4A. . Further, the high-frequency power supply 61A is turned on, and each gas supplied to the processing space 73 is plasmatized, and the plasma-formed SiH ₄ gas and NO ₂ gas are subjected to CVD to form each film-forming module 4A. A SiO ₂ film is formed on the wall surface of the space 73 (FIG. 6).

Next, the high-frequency power supply 61A is turned off, and the plasma formation in the processing space 73 of each film forming module 4A is stopped, so that the film forming process on the wall surface is stopped. Further, the valve V1 is closed and the valves V3 and V11 are opened, and SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas are supplied to the processing space 73 in the processing container 41 of each film forming module 4B. N ₂ gas is supplied to the processing space 73 in the processing container 41 of each film forming module 4A. In addition, the high-frequency power source 61B is turned on, and each gas supplied to the processing space 73 of each film forming module 4B is plasmatized, and each plasma is formed by CVD of SiH ₄ gas and NO ₂ gas that are plasmatized. A wall surface of the processing space 73 of the membrane module 4B forms a SiO ₂ film. On the other hand, each film forming module 4A flushes the processing space 73 with N ₂ gas (FIG. 7).

Thereafter, the valve V11 is closed, and the flushing of the processing space 73 in each film forming module 4A is stopped. When the high-frequency power source 61B is turned off, the plasma formation in the processing space 73 of each film forming module 4B is stopped, and the film forming process on the wall surface is stopped. In addition, the valves V3, V5, V6, V8 to V10 are closed, the supply of SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas is stopped, the valve V12 is opened, and N ₂ gas is supplied to each The processing space 73 of the film forming module 4B is flushed.

In this way, in the film forming modules 4A and 4B, the formation of the SiO ₂ film on the wall surface in the processing container 41 and the subsequent processing space 73 are rinsed. On the other hand, the wafer W in the container 11 is transferred to The transfer mechanism 15 of the carrier block D1 → the receiving unit 17 of the receiving block D2 → the transfer mechanism 22 of the processing block D3 → the transfer mechanism 35 of the load lock module 3 of the wafer processing unit 2A is received in the order, As a result, the load-lock module 3 is carried into the load-lock module 3 which has a normal atmospheric atmosphere inside. Furthermore, in a state where the gate valves 33 and 34 of the load lock module 3 are closed, after the load lock module 3 becomes a vacuum atmosphere, the film forming module 4A and the load lock module 3 in the gate valve 34 are distinguished. The gate valve 34 is opened.

Next, the wafer W is transferred to the mounting table 44 of the film formation module 4A moved to the transfer position by the transfer mechanism 35 and is heated to 400 ° C. by the heater 45, for example. The above-mentioned gate valve 34 is closed, and when the mounting table 44 on which the wafer W is mounted is raised toward the processing position to form a processing space 73, the pressure of the processing space 73 becomes, for example, 133.3 Pa (1 Torr) to 656.5 Pa (5 Torr).

Next, the valves V1, V5, V6, and V8 to V10 are opened, and SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas are supplied to the processing space 73 of each film forming module 4A. Further, the high-frequency power source 61A is turned on, and each gas supplied to the processing space 73 is plasmatized, and a SiO ₂ film is formed on the wafer W by CVD of SiH ₄ gas and NO ₂ gas that have been plasmatized (FIG. 8). Then, the high-frequency power supply 61A is turned off, and the valves V1, V5, V6, and V8 to V10 are closed. The supply of SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas to the processing space 73 and the plasma The formation is stopped, so that the formation of the SiO ₂ film is stopped. Then, the valve V11 is opened, and N ₂ gas is supplied to the processing space 73 in the processing container 41 of each film forming module 4A, and the processing space 73 is flushed.

Thereafter, the valve V11 is closed, the flushing of the processing space 73 is stopped, and the valves V1, V5, V7 to V10 are opened, and SiH ₄ gas, NO ₃ gas, Ar gas, N ₂ gas, and He gas are supplied to each Processing space 73 of the film forming module 4A. In addition, the high-frequency power supply 61A is turned on, and each gas supplied to the processing space 73 is plasmatized, and CVD of SiH ₄ gas and NH ₃ gas by plasma is performed on the SiO ₂ film in the wafer W. A SiN film is formed thereon. For example, on the other hand, the valve V12 is closed, and the flushing of the processing space 73 in each film forming module 4B is stopped (FIG. 9).

Then, the high-frequency power supply 61A is turned off, and the valves V1, V5, and V7 to V10 are closed. The supply of SiH ₄ gas, NH ₃ gas, Ar gas, N ₂ gas, and He gas to the processing space 73 and the formation of the plasma are completed. Stop, so that the formation of the SiN film is stopped. Then, the valve V11 is opened, and N ₂ gas is supplied to the processing space 73 in the processing container 41 of each film forming module 4A, and the processing space 73 is flushed.

After the valve V11 is closed and the processing space 73 is flushed, it is connected to the film formation module 4A to repeat one of the above-mentioned series of processes, that is, the supply of each gas to the processing space 73 and the formation of the plasma The formation of the SiO ₂ film of the wafer W, the flushing of the processing space 73, the supply of various gases to the processing space 73, and the formation of the plasma, the formation of the SiN film of the wafer W, and the flushing of the processing space 73 In this sequential method, the switches of the valves V1, V5 to V10, and V11 and the on-off of the high-frequency power source 61A are switched, so that a SiO ₂ film and a SiN film are alternately laminated on the wafer W.

For each wafer W, an SiO ₂ film and a SiN film were alternately formed 48 times (that is, the first layer to the 48th layer were formed), and the processing space 73 after the formation of the SiN film forming the 48th layer was rinsed (FIG. 10). ), When the flushing is completed, the gate valves 34 that distinguish the film-forming modules 4A, 4B and the load-locking module 3 that becomes a vacuum atmosphere are opened. Next, wafers are transferred from the mounting table 44 of the film-forming module 4A moved toward the receiving position to the mounting table 44 of the film-forming module 4B moved toward the receiving position by the transfer mechanism 35 of each loading lock module 3. The wafer W is heated to, for example, 400 ° C. by the heater 45 of the mounting table 44 of the film formation module 4B. The gate valves 34 described above are closed, and in the film forming modules 4A and 4B, the mounting table 44 is raised toward the processing position to form a processing space 73.

In each film forming module 4B, when the pressure in the processing space 73 becomes, for example, 133.3 Pa (1 Torr) to 656.5 Pa (5 Torr), the valves V3, V5, V6, V8 to V10 are opened, and SiH ₄ gas, NO ₂ Gas, Ar gas, N ₂ gas, and He gas are supplied to the processing space 73 of each film forming module 4B. Then, the high-frequency power source 61B is turned on, and each gas supplied to the processing space 73 is plasmatized, so that a SiO ₂ film constituting the 49th layer is formed on the wafer W.

In this way, the SiO ₂ film is formed in each film forming module 4B. On the other hand, in each film forming module 4A, the pressure of the processing space 73 becomes a predetermined vacuum pressure, and the valves V2, V13, and V14 are formed. The NF ₃ gas and the Ar gas that are turned on by the remote plasma forming unit 59 are turned on and supplied to the processing space 73 of each film forming module 4A. The plasma-formed NF ₂ gas and Ar gas are used to remove SiO ₂ formed on the wall surface forming the processing space 73 when the wafer W is film-formed and before the wafer W is film-formed. Cleaning of the film and SiN film (Fig. 11).

Then, the high-frequency power supply 61B is turned off, the valves V3, V5, V6, and V8 to V10 are closed, and the SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He to the processing space 73 of each film forming module 4B are closed. The supply of gas and the formation of the plasma are stopped, so that the formation of the SiO ₂ film is stopped. Then, the valve V12 is opened, and N ₂ gas is supplied to the processing space 73 of each film forming module 4B, and the processing space 73 is flushed.

Thereafter, the valve V12 is closed, the flushing of the processing space 73 is stopped, the valves V3, V5, V7 to V10 are opened, and SiH ₄ gas, NH ₃ gas, Ar gas, N ₂ gas, and He gas are supplied to each component. Processing space 73 of the membrane module 4B. Then, the high-frequency power source 61B is turned on, and each gas supplied to the processing space 73 is plasmatized. The plasma of SiH ₄ gas and NH ₃ gas is CVD to form a 49th layer on the wafer W. SiN film. Each film forming module 4A is subsequently cleaned (FIG. 12).

Then, the high-frequency power source 61B is turned off, and the valves V3, V5, and V7 to V10 are closed. The supply of SiH ₄ gas, NH ₃ gas, Ar gas, N ₂ gas, and He gas to the processing space 73 and the formation of the plasma are completed. Stop, so that the formation of the SiN film is stopped. Then, the valve V12 is opened, and N ₂ gas is supplied to the processing space 73 in the processing container 41 of each film forming module 4B, and the processing space 73 is flushed.

After the valve V12 is closed and the flushing of the processing space 73 is stopped, in the film forming module 4B, one of the above-mentioned series of processing is repeated, that is, the supply of each gas to the processing space 73 and the formation of the plasma The formation of the SiO ₂ film of the wafer W, the flushing of the processing space 73, the formation of the SiN film of the wafer W, and the flushing of the processing space 73 due to the supply of various gases to the processing space 73 and the formation of the plasma In a sequential manner, the switches of the valves V3, V5 to V10, and V12 are switched and the high-frequency power source 61B is turned on and off. Thereby, the SiO ₂ film and the SiN film are alternately laminated on the wafer W. In this way, film formation is performed with each film formation module 4B, on the other hand, the valves V2, V13, and V14 are closed, and cleaning of each film formation module 4A is stopped. After the valve V11 is opened and the processing space 73 of each film forming module 4A is flushed, the valve V11 is closed and the flushing is stopped.

Each film formation module 4B is to form an SiO ₂ film and a SiN film for each of the wafers W 48 times (that is, to form the 49th layer to the 96th layer), and open the valve V12 to perform the SiN of the 96th layer. The processing space 73 is rinsed after the film is formed. In parallel with opening the valve V12, the valves V1, V5, V6, V8 to V10 are opened, and SiH ₄ gas, NO ₂ gas, Ar gas, N ₂ gas, and He gas are supplied to each of the film forming modules 4A. At the same time as the processing space 73, the high-frequency power supply 61A is turned on, and a SiO ₂ film is formed on the wall surface constituting each processing space 73 (FIG. 13).

Thereafter, the valve V12 is closed, the flushing of the processing space 73 of each film forming module 4B is completed, and the gate valve 34 which distinguishes each film forming module 4B and each load lock module 3 is opened, and each film forming module 4B The mounting table 44 moves to the receiving position. Then, after the wafer W is carried out to the load lock module 3 in a vacuum atmosphere by the transfer mechanism 35 of the load lock module 3, the film formation modules 4B and the load lock modules 3 described above are distinguished. The gate valve 34 is closed, so that the atmospheric pressure atmosphere in the load lock module 3 becomes a normal pressure atmosphere, and the gate valve 33 that distinguishes the transfer area 21 and the load lock module 3 is opened. The wafer W is returned to the transfer container 11 via a path opposite to that when the wafer W is transferred from the transfer container 11 to the load lock module 3.

In the film forming module 4B carrying the wafer W out in this manner, the loading stage 44 moves to the processing position, and the pressure in the processing space 73 of each film forming module 4A becomes a predetermined vacuum pressure. Next, the valves V4, V13, and V14 are opened, and the NF ₃ gas and the Ar gas that are plasmatized by the remote plasma forming unit 59 are supplied to the processing space 73 of each film forming module 4B to be cleaned.

During the cleaning of each film forming module 4B, the high-frequency power supply 61A is turned off, and the valves V3, V5, V6, and V8 to V10 are closed. In each film forming module 4A, the SiO _{2 on} the wall surface constituting the processing space 73 is turned off. The film formation is stopped, the valve V11 is opened, and N ₂ gas is supplied to the processing space 73 of each film forming module 4A, and the processing space 73 is flushed. Thereafter, when the valve V11 is closed and the flushing is stopped, the subsequent wafers W are transferred from the transfer container 11 in each film forming module 4A, and the first wafer W is processed in the same manner as the first processed wafer W to form the first wafer W. Formation processing of the SiO ₂ film and the SiN film from the first to the 48th layers (FIG. 14).

Regarding each film forming module 4B, the processing space 73 is rinsed after the cleaning is completed. Further, after the 48th layer is formed by, for example, the film-forming module 4A, the valve V11 is opened to start flushing of the processing space 73 after the 48th layer is formed, and supply and supply of each gas to each film-forming module 4B are performed. The plasma is caused by the high-frequency power source 61B, and a SiO ₂ film is formed on the wall surface of the processing container 41 forming the processing space 73 of each film-forming module 4B.

After the formation of the SiO ₂ film is stopped, the processing space 73 of each film forming module 4B is flushed. After the flushing is stopped, the processed wafer W is transferred to each film forming module 4B by each film forming module 4A. In the same manner as the wafer W first transferred to the film formation module 4B, the film formation process of the 49th to 96th layers is performed. As illustrated in FIG. 11 to FIG. 13, preparation is performed as follows: During the film formation process of each film formation module 4B, each film formation module 4A is cleaned, and the 96th layer is formed by each film formation module 4B. Thereafter, when the processing space 73 is rinsed, each film forming module 4A is formed with SiO ₂ on the wall surface of the processing container 41 to process the wafer W.

In addition, subsequent wafers W are also transported in the order of the film forming modules 4A and 4B from the carrier block D1, which is a common loading port for each film forming module 4A, 4B, and form the first layer to the 96th layer. The film formation module 4 that has completed the film formation process is cleaned until the wafer W is carried in next. If this happens, the transfer mechanism 35 that mounts the lock module 3 transfers the wafer W alternately between the film forming modules 4A and 4B.

However, if the above-mentioned processes are described in more detail, the piping system is configured as described above, and the valves provided in the piping system are opened and closed, whereby each film-forming module constituting the same film-forming module group is formed. In step 4, the formation of the SiO ₂ film, the flushing of the processing space 73, the formation of the SiN film, and the cleaning process are performed simultaneously. That is, each process is performed synchronously between the film-forming modules 4A, and each process is performed synchronously between the film-forming modules 4B. To describe in more detail, in the three film-forming modules 4A and three film-forming modules 4B, the processes are performed in batches. However, the simultaneous processing between the film-forming modules 4A or the film-forming modules 4B is to output a control signal in such a manner that, for example, the operations of the valve opening and closing are performed simultaneously. That is, specifically, for each valve V1 that supplies gas to each film-forming module 4A, for example, as long as they are simultaneously opened at a certain time to process the wafer W in each film-forming module 4A, a control signal is output. Therefore, even if there is a time difference in response to the control signal between the valves V1 due to the operating performance, it is set to process the wafers W simultaneously between the film forming modules 4A.

As described above, the film forming apparatus 1 is provided with a valve. A gas supply mechanism of V5 to V10 and gas supply sources 53 to 58 for supplying each gas required for film formation, and each of the film formation modules 4A constituting the film formation module group 40A are formed on the wafer by the gas supply mechanism. W simultaneously performs the film formation process, and each of the film formation modules 4B constituting the film formation module group 40B simultaneously performs the film formation process on the wafer W. Since a plurality of wafers W can be processed simultaneously in this manner, the film forming apparatus 1 can obtain relatively high productivity. In addition, since the above-mentioned gas supply mechanism is shared between the film forming modules 4A and 4B, it is possible to suppress the manufacturing cost or the cost required for the management of the device, or to prevent the device from increasing in size.

In addition, the film forming apparatus 1 is shared among the film forming modules 4 constituting the film forming module groups 40A and 40B by the gas supply sources 95 and 96 for cleaning, the valves V11 and V12, and the remote units. The purge gas supply mechanism formed by the plasma forming unit 59 can more reliably suppress the manufacturing cost of the film forming apparatus 1. Further, since the pressure adjustment sections 67A and 67B that adjust the pressure in the processing container 41 are shared between the film forming modules 4A and 4B, respectively, the film forming apparatus 1 can be more reliably suppressed. Manufacturing costs or large-scale.

In addition, while the film-forming module of any one of the film-forming module 4A and the film-forming module 4B is being subjected to the film-forming process, the other film-forming module is cleaned by the aforementioned purge gas supply mechanism. Therefore, after the film forming process is completed with one film forming module, the film forming process can be quickly started with the other film forming module, so that the productivity of the film forming apparatus 1 can be more surely improved. After the film formation of the wafer W is completed by the film formation module of one of the film formation modules 4A and 4B, the processing space 73 is flushed. Meanwhile, the other film forming module performs film formation on the wall surface forming the processing space 73. Therefore, from this point of view, it is also possible to more surely improve the productivity of the film forming apparatus 1.

However, when the formation of the SiO ₂ film and the formation of the SiN film is repeated for the wafer W, the film is deposited on the wall surface of the processing space 73. The state of the plasma formed in the processing space 73 changes depending on the thickness of the deposited film. Thereby, there is a possibility that the film thickness or film quality of each film formed on the wafer W may change. However, the processing by the film forming apparatus 1 described above is performed by using the film formation module 4A to form a layer of a predetermined number of SiO ₂ films and SiN films on the wafer W, and then transfer the wafer W to cleaning The other side of the completed film-forming module 4B continues the film-forming process. Therefore, since the state of the plasma formed around the wafer W can be made uniform during the formation of each film, the thickness of each film can be made consistent with the set value, and between each SiO ₂ film and each SiN film. Make the film quality consistent between them.

In addition, when different types of films are deposited in multiple layers and formed on the wall surface forming the processing space 73, it is necessary to worry that the stress of each film becomes relatively high, and the films peel off from the wall surface to become particles. However, the processing by the film forming apparatus 1 also has the following advantages: as described above, the wafer W is transferred between the film forming modules 4A and 4B and the film forming modules 4A and 4B are cleaned. Therefore, contamination of the wafer W caused by the particles can be suppressed.

Furthermore, since the film forming apparatus 1 described above stores and processes the wafer W in each processing container 41, each of the processing devices 41 can be individually adjusted to adjust parameters such as the temperature of the heater 45 in each processing container 41. crystal The film quality or film thickness of the circle W. That is, compared with a film forming apparatus that stores a plurality of wafers W in one processing container and performs batch processing, the uniformity of processing can be improved between the wafers W, thereby suppressing each wafer W If the film quality or film thickness is different.

The film-forming modules 4 constituting the same film-forming module group are arranged in layers. This arrangement is advantageous because the number of film formation modules is relatively increased and the floor area occupied by the film formation device 1 is relatively small. In addition, as described above, in the manner in which the film-forming module 4 is laminated, as described above, the common exhaust pipe 66 can also be guided along the arrangement direction of the modules and upward and downward, and can occupy an area of the floor. It is possible to more reliably suppress an increase in size of the film forming apparatus 1. The number of modules constituting each film-forming module group is not limited to three, but may be two or four or more.

The wafer processing units 2A to 2D are opposed to each other across the transfer area 21 as described above, and are provided along the transfer area 21. With such an arrangement, since the transfer mechanism 22 is used in common for the wafer processing units 2A to 2D, the size of the film forming apparatus 1 can be suppressed, and the number of the processing containers 41 to be mounted can be relatively increased to achieve productivity. Promotion. In addition, in the film forming apparatus 1, a load lock module 3 is provided for each group of film forming modules 4 composed of film forming modules 4A and 4B arranged in front and back. Therefore, the wafer W can be moved from the film-forming module 4A to 4B in parallel with each other between the film-forming module 4A and the film-forming module 4B by the transport mechanism 35 of each load-lock module 3. Therefore, the productivity of the film forming apparatus 1 can be more surely improved.

The gas supply sources 53 to 58 and the valves V5 to V10 constituting the film formation gas supply mechanism for performing the above-described film formation process are not limited to being shared by the film formation module groups 40A and 40B, and may be used in the film formation module group. 40A and 40B are provided individually. However, as described above, it is possible to more reliably suppress the manufacturing cost of the device in a manner shared by the film-forming module groups 40A and 40B. In the above-mentioned processing example, the film-forming processing is performed by supplying the same types of gases to the film-forming module groups 40A and 40B. As described above, in the case where the same type of gas is supplied to the wafer W from the film formation gas supply mechanism for processing between the film formation module groups 40A and 40B, it is from the viewpoint of suppressing the manufacturing cost as described above. It is effective to share the film-forming gas supply mechanism between the film-forming module groups 40A and 40B. In addition, even in the case of forming films having different film thicknesses between the film-forming module groups 40A and 40B, for example, as long as the types of the gases used are the same and the films of the same type are formed, they can be shared as such. Film-forming gas supply mechanism.

In the film formation process described above, the number of layers formed from being carried into the film forming module 4A or 4B to being carried out to the load lock module 3 is not limited to 48, and one wafer W is transferred to The number of times of the film forming modules 4A and 4B is not limited to one each. Therefore, the wafer W can also be transported between the film formation modules 4A and 4B in a reciprocating manner. Each time the wafer W is transported to the film formation modules 4A and 4B, the film formation process is performed on the wafer W. deal with. In such a case, for example, the film formation module 4 after the film formation process is also cleaned, whereby one and the other of the film formation modules 4A and 4B are cleaned and filmed in parallel. In addition, the wafer W may not be transported between the film forming modules 4A and 4B, and may be transferred between the film forming modules 4A and 4B. After receiving the film-forming process, one of them may return to the transport container 11 without being transported to the other party. In this case, one of the film forming modules 4A and 4B is also cleaned after the film forming process is completed. The subsequent wafer W is transferred to the other of the film forming modules 4A and 4B, and the film forming process is performed in parallel with the cleaning of one of the film forming modules 4A and 4B.

In addition, among the three film-forming modules 4 constituting the same film-forming module group, as described above, the operations of the respective parts of the devices such as the valves V and the like are controlled while the film-forming processing is performed simultaneously. However, as described herein, it is not limited to the case where the processing time band of the wafer W is the same between the three film forming modules 4, and there may be an offset in the processing time band. That is, the timing of starting the supply of the film-forming gas or the timing of stopping the supply of the film-forming gas may be shifted between the film-forming modules 4A forming the film-forming module group 40A, or the film formation may be performed. The timing of starting the supply of the film-forming gas or the timing of stopping the supply of the film-forming gas are shifted between the film-forming modules 4B of the module group 40B.

Specifically, it is, for example, between the film-forming modules 4A. When there is a slight difference in performance, the valves V1 that are respectively set to correspond to the film-forming modules 4A are used to make the timing of opening. Or the timing of the shutdown is slightly offset to control. Thereby, the poor performance can be eliminated, and a laminated film having high uniformity can be formed between the film forming modules 4A. Similarly, for example, in the case where there is a slight difference in performance between the three film-forming modules 4B, the valves V3 that are set to correspond to the film-forming modules 4B respectively, so that the timing of opening or The timing of closing is slightly shifted to be controlled, whereby the poor performance can be eliminated, and a highly uniform laminated film can be formed between the film forming modules 4B. When one film is formed with three film-forming modules 4 constituting the same film-forming module group, the time when the film-forming gas in the three film-forming modules is first supplied and the film-forming process is started is At t1, the time at which the supply of the film-forming gas is stopped at the slowest time is set to t2. As long as the film-forming gas is supplied to the three film-forming modules 4 during, for example, 90% or more of the time periods t1 to t2, the film-forming gas is simultaneously supplied. When the three film-forming modules 4 constituting the same film-forming module group are overlapped with each other, the time bands for processing are overlapped with each other, thereby suppressing a decrease in productivity.

In addition, the cleaning gas is only required to overlap the supplied time zones between the three film-forming modules 4 constituting the same film-forming module group, and is not limited to being among the three film-forming modules 4. In some cases, the time bands for supplying the cleaning gas are consistent with each other. Specifically, for example, each valve V2 provided to correspond to each of the three film-forming modules 4A is controlled so that the timing of opening or closing is slightly shifted, so that the film-forming module 4A can be controlled. In between, the timing of supplying the cleaning gas is slightly shifted. Similarly, for each valve V4 set to correspond to each of the three film-forming modules 4B, control is performed so that the timing of opening or closing is slightly shifted, so that the In some cases, the timing for supplying the cleaning gas is slightly shifted. In addition, in a case where one of the film formation module groups 40A and 40B is used to perform a film formation process that requires a long time, each of the film formation modules 4 constituting the other one of the film formation module groups 40A and 40B is used. It is also possible to perform cleaning in such a way that the time zones of the supply of cleaning gas do not overlap each other.

However, while the film formation process is performed in one of the film formation module groups 40A and 40B, the process performed in the other of the film formation module groups 40A and 40B is not limited to the cleaning process. Specifically, for example, the process performed by the other party may be an etching process of a film formed on the surface of the wafer W. The example shown in FIG. 15 is provided with an HF (hydrogen fluoride) gas supply source 101 and an NH ₃ gas supply source 102. The gas supply sources 101 and 102 are connected to the upstream ends of the pipes 103 and 104, respectively, and the pipes 103 The downstream ends of 104 and 104 are respectively merged via valves V21 and V22 to form a manifold, and the manifold is connected to the upstream ends of valves V2 and V4 of each pipe 52 of the film forming modules 4A and 4B. That is, it is configured to be independent of the remote plasma of the HF gas and Ar gas described above, and also supplies HF gas and NH ₃ gas to the piping 52 of each of the film forming modules 4A and 4B.

During the film formation process using one of the film formation module groups 40A and 40B, the other of the film formation module groups 40A and 40B is supplied with HF gas and NH ₃ gas, and is heated in the processing container 41. The heat of the wafer W causes the gases to react with the SiO ₂ film formed on the surface of the wafer W, thereby etching the SiO ₂ film. Since the piping system is configured as described above, the HF gas and the NH ₃ gas, which are processing gases, are simultaneously supplied and processed between one of the film forming modules 4A and 4B. Although the SiH ₄ gas, NO ₂ gas, and NH ₃ gas are the first processing gas and the second processing gas in the configuration example of the device shown in FIGS. 1 to 5 described above, the configuration example of the device shown in FIG. 15 Among them, SiH ₄ gas, NO ₂ gas, and NH ₃ gas are the first processing gas, and HF gas and NH ₃ gas are the second processing gas. In addition, FIG. 15 is the same as the above-mentioned FIG. 6, and the presence or absence of hatching indicates the valves that are used to form the SiO ₂ film in the film formation module 4A in parallel with each other and the etching in the film formation module 4B. Switch status. In each module, only the etching by gas is performed without forming a film. Therefore, the vacuum processing apparatus of the present invention is not limited to being configured as a film forming apparatus.

The film formation process performed by the film formation module groups 40A and 40B is not limited to CVD, and may be ALD (Atomic Layer Deposition). The CVD and ALD may be performed by forming a plasma in the processing space 73 as described above, or may be performed by setting the wafer W to a higher temperature without forming a plasma. The film formed on the wafer W is not limited to a SiO ₂ film or a SiN film. The device may be configured by using a process gas such as a TiO ₂ film or a TiN film to form these films. In addition, the film formation module 4 is not limited to the formation of a laminated film composed of different types of films, and may form one type of film. Even in this case, peeling of the film on the wall surface of the processing container 41 and adhesion to the wafer W can be reliably suppressed.

The number of modules connected to the load lock module 3 is not limited to two. FIG. 16 shows an example in which, for the load lock module 3 formed into the pentagon as described above, the annealing processing module 111 for annealing the wafer W is connected to the transfer ports 31 and 32. One of the two sides adjacent to the open side. In the figure, 112 is a transfer port opened at the side for receiving and receiving wafers W from the annealing processing module 111. In the figure, 113 is a gate valve that opens and closes the transfer port 112.

The annealing processing module 111 is similar to, for example, the film forming module 4 and includes a mounting table 44 for mounting the wafer W and heating the wafer W to a predetermined temperature. For example, as described above, each of the wafers W formed with 48 layers of SiO ₂ film and SiN film and transferred to the transfer mechanism 35 of the load lock module 3 is transferred to the annealing processing module 111 and heated to a predetermined temperature. By the way, annealed. Thereafter, the wafer W is transferred out of the annealing processing module 111 by the transfer mechanism 35 described above, and is transferred to the transfer mechanism 22 of the transfer region 21 and returned to the transfer container 11.

However, the film-forming module 4 that performs the film-forming process without being laminated and synchronized as described above may be arranged at the same height in the horizontal direction. FIG. 17 shows an example in which the wafer processing unit 2A is configured by the two film-forming modules 4A and the two film-forming modules 4B that are arranged in the horizontal direction with respect to each other. These film-forming modules 4A and 4B are arranged along the extending direction of the transport area 21. However, as described above, since the enlargement of the device can be prevented, it is preferable that each of the film-forming modules 4A and 4B be stacked and arranged separately.

In addition, for example, the transfer chamber 16 of the receiving and receiving block D2 is configured to switch between a normal pressure atmosphere and a vacuum atmosphere in the same manner as in the load lock module 3. In addition, the transfer area 21 of the processing block D3 is configured to have a vacuum atmosphere, and the load lock module 3 is also configured to always form a vacuum atmosphere. That is, in such a configuration example, the department receiving block D2 is configured as a load lock module instead of the load lock module 3. In other words, the load lock module is not limited to being provided at a position directly connected to the film forming module 4 as described above.

The above-mentioned transfer room 13 of the carrier block D1, the transfer room 16 of the receiving block D2, and the transfer area 21 of the processing block D3 are not limited to the case where the atmosphere is set, and may be set to, for example, an inert gas atmosphere. The load lock module 3 is not limited to each of the film forming dies provided in a group with each other. Groups 4A, 4B. For example, the load lock module 3 is configured to be lengthwise, and a plurality of film-forming modules 4A and a plurality of film-forming modules 4B stacked on each other are connected to the load-lock module 3, and the transport mechanism 35 The system can also be configured to be liftable, whereby wafers W are received and received between the film-forming modules 4A and 4B of each group. In addition, the above-mentioned film formation processing and cleaning can be performed independently between the wafer processing units 2A to 2D, or between the wafer processing units 2A to 2D's film forming modules 4A. The film forming modules 4B of the wafer processing units 2A to 2D simultaneously perform respective processes.

However, the film-forming modules 4A and 4B need only be provided at positions where wafers W can be received and received by the load-locking module 3, and the load-locking module 3 is constituted together with the film-forming modules 4A and 4B. Processing department. Therefore, for example, one film formation module 4A, one loading lock module 3, and one film formation module 4B may be arranged in a row in the front-rear direction, that is, along the length direction of the transport area 21. Each module of the processing unit. That is, the film-forming modules 4A and 4B are not limited to being connected to the load lock module 3 from the opposite side of the transport area 21. The present invention is not limited to the foregoing embodiments, and the embodiments can be appropriately modified or combined.

1‧‧‧ film forming device

2‧‧‧ Wafer Processing Unit

2A‧‧‧wafer processing unit

2B‧‧‧ Wafer Processing Unit

2C‧‧‧ Wafer Processing Unit

2D‧‧‧wafer processing unit

3‧‧‧ Load lock module

4‧‧‧Film forming module

4A‧‧‧Film forming module

4B‧‧‧Film forming module

11‧‧‧ transport container

12‧‧‧mounting table

13‧‧‧ transfer room

14‧‧‧Open and close the door

15‧‧‧ transfer agency

16‧‧‧ transfer room

17‧‧‧ placement section

21‧‧‧Transportation area

22‧‧‧ transfer agency

23‧‧‧ guide rail

24‧‧‧ Pillar

25‧‧‧lifting platform

26‧‧‧Turntable

27‧‧‧ support

31‧‧‧ port

32‧‧‧ port

33‧‧‧Gate Valve

34‧‧‧Gate Valve

35‧‧‧ transfer agency

40A‧‧‧Film forming module group

40B‧‧‧Film forming module group

63A‧‧‧ Matcher

63B‧‧‧ Matcher

64‧‧‧machine setting area

65‧‧‧ exhaust pipe

67A‧‧‧Pressure Adjustment Department

67B‧‧‧Pressure Adjustment Department

100‧‧‧Control Department

D1‧‧‧ Carrier Block

D2‧‧‧ Accepted Blocks

D3‧‧‧Processing Block

W‧‧‧ Wafer

Claims (11)

A vacuum processing apparatus is characterized in that it includes a plurality of first processing containers and a plurality of second processing containers, each of which stores substrates to form a vacuum atmosphere for processing; and a loading port for carrying the substrates. Containers, which are used in common for the plurality of first processing containers and the second processing containers; a substrate transfer mechanism for transferring the substrate between the loading port and the plurality of first processing containers and the plurality of second processing containers; A first gas supply mechanism that simultaneously supplies a first processing gas to the plurality of first processing vessels to process the substrate; and a second gas supply mechanism that simultaneously supplies a second process to the plurality of second processing vessels The substrate is processed by gas. For example, the vacuum processing device according to the first scope of the patent application, wherein the first processing gas and the second processing gas are film-forming gases, and are provided with a cleaning gas supply mechanism for the first processing gas or the second processing gas. When the processing gas is supplied to one of the first processing container and the second processing container, a cleaning gas for removing a film in the processing container is supplied to the first processing container and the second processing container. The other party. For example, the vacuum processing device of the first or second scope of the patent application, wherein the substrate transfer mechanism is located between the plurality of first processing containers and the first processing container. The substrates are alternately transferred between the plurality of second processing containers. For example, the vacuum processing device of the first or second scope of the patent application, wherein the second processing gas is the first processing gas, and the second gas supply mechanism is the first gas supply mechanism. The container and each of the second processing containers are supplied with the first processing gas through the shared first gas supply mechanism. For example, the vacuum processing device of the first or second scope of the patent application, wherein the plurality of first processing containers are laminated on each other, and the plurality of second processing containers are stacked on each other. For example, the vacuum processing device of the first or second patent application scope includes a load lock module, which is connected to each of the first processing containers and the second processing containers, and is formed in a normal pressure atmosphere and a vacuum atmosphere. The substrate transfer mechanism includes a first substrate transfer mechanism provided in the load-lock chamber which is freely switchable, and is provided in the load-lock chamber. For example, if the vacuum processing device of claim 6 is applied, when the foregoing first processing container and the foregoing second processing container are set as a group of processing containers, the aforementioned load lock module faces the loading from the aforementioned load. The method of transporting the substrate in a normal-pressure atmosphere extending forward and backward The first processing container and the second processing container arranged in the front-rear direction are connected to each group provided in the processing container. A vacuum processing method, comprising: a process of forming a vacuum atmosphere by storing substrates in a plurality of first processing containers; a process of forming a vacuum atmosphere by storing substrates in a plurality of second processing containers; The process of placing the substrate transfer container to the loading port for the first processing container and the second processing container is shared between the loading port and the plurality of first processing containers and the plurality of second processing containers. A process of transferring the substrate; a process of simultaneously supplying the first processing gas to the plurality of first processing vessels to process the substrate; and a process of simultaneously supplying the second processing gas to the plurality of second processing vessels to process Engineering of the aforementioned substrate. For example, the vacuum processing method of the eighth scope of the patent application, wherein the first processing gas and the second processing gas are film-forming gases, and include: film-forming process, the first processing gas or the second processing The gas is supplied to one of the first processing containers and the second processing containers; and The cleaning process is performed in parallel with the film forming process, and a cleaning gas for removing a film in the processing container is supplied to the other of the first processing containers and the second processing containers. For example, the vacuum processing method of the eighth or ninth scope of the patent application includes the following process: the substrate is alternately transferred between the plurality of first processing containers and the plurality of second processing containers. A memory medium stores a computer program used by a vacuum processing device. The vacuum processing device supplies a processing gas to a substrate for processing. The memory medium is characterized in that the computer program is programmed to be implemented to implement A group of steps for applying a vacuum processing method according to any one of claims 8 to 10.