TW201805464A - Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly - Google Patents
Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 99
- 239000002245 particle Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 98
- 230000008569 process Effects 0.000 claims abstract description 64
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000009832 plasma treatment Methods 0.000 abstract description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 64
- 239000007789 gas Substances 0.000 description 51
- 229910004205 SiNX Inorganic materials 0.000 description 30
- 230000015556 catabolic process Effects 0.000 description 15
- 238000006731 degradation reaction Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000001782 photodegradation Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 229910001415 sodium ion Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 hydrogenated hafnium nitride Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本發明是關於一種提供使用（遠端）電漿增強式化學氣相沈積（plasma enhanced chemical vapor deposition；PECVD）而沈積梯度（graded或gradient）層於太陽能電池上的方法，更尤其是關於一種將粒子流提供至基板的方法。在另外態樣中，本發明是關於一種用於電漿增強式化學氣相沈積裝置的電漿源組件，電漿源組件用於將梯度層（例如，氮化矽（SiNx）層）沈積於太陽能電池上。The present invention relates to a method for depositing a graded or gradient layer on a solar cell using (remote) plasma enhanced chemical vapor deposition (PECVD), and more particularly A method of providing a stream of particles to a substrate. In another aspect, the present invention is directed to a plasma source assembly for a plasma enhanced chemical vapor deposition apparatus for depositing a gradient layer (eg, a tantalum nitride (SiNx) layer) On the solar cell.
國際專利公開案WO2013/032406揭露一種用於將層沈積於基板上的系統及方法。多個電漿源按順序（以可能變化的空間分離度）配置於基板載體（substrate carrier）上方，基板載體相對於多個電漿源而移動。來自每一順次電漿源的電漿致使後續層沈積於基板上，例如，以提供SiNx層中的折射率的階梯形增加，亦即，每一層因而為均一層。International Patent Publication No. WO 2013/032406 discloses a system and method for depositing a layer on a substrate. A plurality of plasma sources are arranged in sequence (with possibly varying spatial resolution) above a substrate carrier, the substrate carrier moving relative to the plurality of plasma sources. The plasma from each sequential plasma source causes subsequent layers to be deposited on the substrate, for example, to provide a stepwise increase in the refractive index in the SiNx layer, i.e., each layer is thus a uniform layer.
美國專利公開案US2013/0171757揭露一種用於使晶態矽太陽能電池鈍化的進階平台。基板處理系統（substrate processing system）包括多個沈積源，多個沈積源意欲隨著基板在沈積源下方通過而將層形成於基板的表面上。在相關聯的多個沈積源中的每一者下方存在多個電漿容積（plasma volume）。利用此等多個沈積源的組合以形成不同電漿容積，不同電漿容積允許將後續層形成於基板上。來自第一氣體源及第二氣體源的前驅體氣體的流動速率的變化將引起第一電漿容積及第二電漿容積中的電漿密度及/或通量的變化，此將引起形成具有不同但仍均一的組成物的後續層。U.S. Patent Publication No. US 2013/0171757 discloses an advanced platform for passivating crystalline germanium solar cells. A substrate processing system includes a plurality of deposition sources, the plurality of deposition sources being intended to form a layer on a surface of the substrate as the substrate passes under the deposition source. There is a plurality of plasma volumes below each of the associated plurality of deposition sources. A combination of such multiple deposition sources is utilized to form different plasma volumes that allow subsequent layers to be formed on the substrate. A change in the flow rate of the precursor gas from the first gas source and the second gas source will cause a change in the plasma density and/or flux in the first plasma volume and the second plasma volume, which will cause formation Subsequent layers of different but still uniform compositions.
美國專利公開案US 4,608,943揭露一種經設計以將摻雜劑的均一的定域造型（localized profiling）提供至半導體合金材料的基體（host matrix）中的陰極組件。組件用於生產多個p-i-n型電池，其中藉由輝光放電沈積製程（glow discharge deposition process）將層均一地沈積至移動基板上。US Patent No. 4,608,943 discloses a cathode assembly designed to provide uniform localized profiling of dopants into a host matrix of a semiconductor alloy material. The assembly is used to produce a plurality of p-i-n type cells in which a layer is uniformly deposited onto a moving substrate by a glow discharge deposition process.
本發明設法提供一種用於將諸如氮化矽（SiNx）基層的梯度層沈積於太陽能電池上的改良式方法。在SiNx的狀況下，經沈積的梯度SiNx層不僅改良太陽能電池的抗反射性質以及其表面鈍化（surface passivation），而且縮減與SiNx層相關的UV光降解以及太陽能電池的電位誘發性降解（potential induced degradation；PID）兩者，此又改良太陽能電池的功率輸出及長期穩定性。The present invention seeks to provide an improved method for depositing a graded layer such as a tantalum nitride (SiNx) based layer on a solar cell. In the case of SiNx, the deposited gradient SiNx layer not only improves the anti-reflective properties of the solar cell and its surface passivation, but also reduces the UV photodegradation associated with the SiNx layer and the potential induced degradation of the solar cell. Both degradation; PID), which improves the power output and long-term stability of the solar cell.
根據本發明，提供一種在前文中所定義的類型的方法，包括將電漿增強式化學氣相沈積（PECVD）裝置的電漿源組件提供於待處理的基板的表面上方以用於將層沈積至表面上的步驟，電漿源組件包括：外殼，具有電漿處理出口（plasma treatment outlet），電漿處理出口在操作中接近於表面且形成電漿製程區（plasma process zone）以用於藉由表面沿著電漿處理出口的相對移動而將層沈積於表面上，外殼具有實質上垂直於表面的相對移動而延伸的上游細長邊緣（upstream elongated edge）以及下游細長邊緣（downstream elongated edge）；一或多個輸入通口（input port），定位於電漿製程區中以用於將製程氣體（process gas）提供至外殼內的電漿產生區（plasma creation zone）。因此，在自上游細長邊緣至下游細長邊緣的方向上移動待處理的基板的表面以供曝露於電漿製程區。方法更包括在流中提供諸類型的粒子的濃度梯度，如自電漿源組件的上游細長邊緣至下游細長邊緣（亦即，靠近於待處理的基板的表面）所量測。經受使用電漿源組件的處理的基板的表面上的所得的經沈積層將展示歸因於粒子流的梯度的堆積梯度。此是僅使用基板自電漿源組件的外殼的上游細長邊緣至下游細長邊緣的單次通過而實現。濃度梯度可存在於電漿源組件內的各種類型的粒子中的任一者中。此等粒子可為離子、自由基、原子、電子以及分子。濃度梯度可為一或多個層形成粒子（layer forming particle），使得其引起層梯度。濃度梯度可為一或多個非層形成粒子（non-layer forming particle），使得其藉由層形成粒子來影響層堆積，且引起層梯度。濃度可為層形成粒子與非層形成粒子的組合，使得其引起所得層的梯度。According to the present invention, there is provided a method of the type defined in the foregoing, comprising providing a plasma source assembly of a plasma enhanced chemical vapor deposition (PECVD) apparatus over a surface of a substrate to be treated for depositing a layer To the surface, the plasma source assembly includes: a housing having a plasma treatment outlet, the plasma processing outlet being in operation close to the surface and forming a plasma process zone for lending Depositing a layer on the surface by relative movement of the surface along the plasma processing outlet, the outer casing having an upstream elongated edge extending substantially perpendicular to the relative movement of the surface and a downstream elongated edge; One or more input ports are positioned in the plasma processing zone for providing process gas to a plasma creation zone within the outer casing. Thus, the surface of the substrate to be processed is moved in a direction from the upstream elongated edge to the downstream elongated edge for exposure to the plasma processing zone. The method further includes providing a concentration gradient of the types of particles in the stream, such as from an upstream elongated edge of the plasma source assembly to a downstream elongated edge (i.e., near the surface of the substrate to be processed). The resulting deposited layer on the surface of the substrate subjected to processing using the plasma source assembly will exhibit a buildup gradient attributed to the gradient of the particle flow. This is accomplished using a single pass of the substrate from the upstream elongated edge of the outer casing of the plasma source assembly to the downstream elongated edge. The concentration gradient can be present in any of the various types of particles within the plasma source assembly. These particles can be ions, free radicals, atoms, electrons, and molecules. The concentration gradient can be one or more layer forming particles such that it causes a layer gradient. The concentration gradient can be one or more non-layer forming particles such that it affects layer stacking by layer forming particles and causes a layer gradient. The concentration can be a combination of layer forming particles and non-layer forming particles such that it causes a gradient of the resulting layer.
一或多個輸入通口可（例如）包括遠離於電漿處理出口的第一製程氣體（例如，氨（NH3 ））通口，以及經定位為分別靠近於上游細長邊沿及/或下游細長邊沿的一或多個第二製程氣體（例如，矽烷（SiH4 ））通口。One or more input port may be (e.g.) away from the plasma processing including a first process gas outlet (e.g., ammonia (NH 3)) port, respectively, and positioned close to the upstream edge of the elongated and / or elongated downstream One or more second process gases (eg, decane (SiH 4 )) ports at the edges.
本發明的方法提供將梯度SiNx抗反射及鈍化層沈積於基板上的高效方式，其縮減UV光降解以及電位誘發性降解。隨著基板的表面在自上游細長邊沿朝向下游細長邊沿的方向上沿著電漿處理出口移動，獲得經沈積層中的Si的梯度濃度，其中在基板近側的Si濃度高於或低於在基板遠側的Si濃度。The method of the present invention provides an efficient way to deposit a gradient SiNx anti-reflective and passivation layer on a substrate that reduces UV photodegradation and potential-induced degradation. A gradient concentration of Si in the deposited layer is obtained as the surface of the substrate moves along the plasma processing exit in a direction from the upstream elongated edge toward the downstream elongated edge, wherein the Si concentration on the near side of the substrate is higher or lower than The Si concentration on the far side of the substrate.
根據本發明的另外態樣，提供一種用於在前文中所定義的類型的電漿增強式化學氣相沈積（PECVD）裝置的電漿源組件，包括：外殼，具有電漿處理出口，電漿處理出口在操作中接近於待處理的基板的表面且形成電漿製程區以用於藉由表面沿著電漿處理出口的相對移動而將層沈積於表面上，外殼具有上游細長邊緣以及下游細長邊緣；電漿產生區，定位於外殼內；一或多個輸入通口，定位於電漿製程區中以用於將製程氣體提供至電漿產生區。電漿源組件經進一步配置以在流中提供濃度粒子梯度，如自上游細長邊緣至下游細長邊緣所量測。According to a further aspect of the present invention, there is provided a plasma source assembly for a plasma enhanced chemical vapor deposition (PECVD) apparatus of the type defined in the foregoing, comprising: a housing having a plasma processing outlet, a plasma The processing outlet is in operation proximate to the surface of the substrate to be processed and forms a plasma processing zone for depositing a layer on the surface by relative movement of the surface along the plasma processing outlet, the outer casing having an upstream elongated edge and a downstream elongated An edge; a plasma generating zone positioned within the outer casing; and one or more input ports positioned in the plasma processing zone for providing process gas to the plasma generating zone. The plasma source assembly is further configured to provide a gradient of concentration particles in the stream, as measured from the upstream elongated edge to the downstream elongated edge.
在太陽能電池工業中，氮化矽（SiNx）且更尤其是非晶氫化氮化矽（a-SiNx:H）是用於太陽能電池表面上的標準抗反射塗層（anti-reflection coating；ARC）。除了其抗反射功能以外，其亦藉由在與Si晶圓或基板的界面處引入正固定電荷（positive fixed charges，Qf）（與界面處的低量缺陷（Dit）組合）而使太陽能電池鈍化。因為大多數具有n型發射極的太陽能電池是p型，所以正固定電荷確實有助於使太陽能電池鈍化。然而，在n型太陽能電池上，通常經由硼摻雜而製造發射極。在此狀況下，正固定電荷對於表面鈍化有害。在UV光的影響下，接近於與Si晶圓的界面的a-SiNx:H內的K中心充電，其會增加正固定電荷，從而減低太陽能電池的硼摻雜區域上的表面鈍化，此為被稱作UV光降解的現象。此外，具有配置於太陽能電池上的玻璃蓋罩板（glass cover plate）的太陽能模組常常遭受源自玻璃蓋罩板的Na+離子。此等Na+離子通過a-SiNx:H層而擴散至與Si晶圓或基板的界面，藉此使模組效率降低。此現象被稱為電位誘發性降解（potential induced degradation，PID），且p型模組及n型模組兩者皆遭受此類降解，但Na+離子所具有的效應對於此兩種類型不相似。In the solar cell industry, tantalum nitride (SiNx) and more particularly amorphous hydrogenated hafnium nitride (a-SiNx:H) is a standard anti-reflection coating (ARC) for use on the surface of solar cells. In addition to its anti-reflective function, it also inactivates the solar cell by introducing a positive fixed charge (Qf) at the interface with the Si wafer or substrate (combined with a low amount of defects (Dit) at the interface). . Since most solar cells with n-type emitters are p-type, the positive fixed charge does help to passivate the solar cells. However, on n-type solar cells, the emitter is typically fabricated via boron doping. In this case, a positive fixed charge is detrimental to surface passivation. Under the influence of UV light, the K-center charge in a-SiNx:H close to the interface with the Si wafer increases the positive fixed charge, thereby reducing the surface passivation on the boron-doped region of the solar cell. It is called the phenomenon of UV light degradation. In addition, solar modules having glass cover plates disposed on solar cells often suffer from Na+ ions originating from the glass cover sheets. These Na+ ions diffuse to the interface with the Si wafer or substrate through the a-SiNx:H layer, thereby reducing module efficiency. This phenomenon is called potential induced degradation (PID), and both p-type modules and n-type modules suffer from such degradation, but the effects of Na+ ions are not similar for these two types.
圖1展示根據本發明的電漿增強式化學氣相沈積（PECVD）裝置的電漿源1組件的實施例。在所展示的實施例中，電漿源組件1包括具有電漿處理出口的外殼8，電漿處理出口在操作中接近於待處理的基板的表面2。電漿源組件1（尤其是電漿處理出口）在操作期間並不與表面2進行實體接觸。亦即，在典型的實施例中，電漿處理出口接近地配置於待處理的表面2上方且與待處理的表面2相隔非零距離。電漿源組件1形成電漿製程區以用於藉由表面2沿著電漿處理出口的相對移動而將（例如）a-SiNx:H層沈積於表面2上。1 shows an embodiment of a plasma source 1 assembly of a plasma enhanced chemical vapor deposition (PECVD) apparatus in accordance with the present invention. In the illustrated embodiment, the plasma source assembly 1 includes a housing 8 having a plasma processing outlet that is in operation proximate to the surface 2 of the substrate to be processed. The plasma source assembly 1 (especially the plasma processing outlet) does not make physical contact with the surface 2 during operation. That is, in a typical embodiment, the plasma processing outlet is disposed proximately above the surface 2 to be treated and at a non-zero distance from the surface 2 to be treated. The plasma source assembly 1 forms a plasma processing zone for depositing, for example, a layer of a-SiNx:H on the surface 2 by relative movement of the surface 2 along the plasma processing exit.
如圖1所描繪，電漿處理出口或更尤其是外殼8包括上游細長邊沿（或上游細長邊緣）6以及下游細長邊沿（或下游細長邊緣）7。此處，「上游」是指與基板的表面2在操作期間相對於電漿源組件1的位移方向相對的方向。相反地，「下游」是指等於基板的表面2在操作期間相對於電漿源組件1的位移方向的方向。電漿處理出口形成用於經由基板的表面2沿著電漿處理出口的相對移動而將層沈積於表面2上的區域。可藉助於傳送帶（或傳送托盤）12及其類似者來移動基板及其表面2。As depicted in Figure 1, the plasma processing outlet or more particularly the outer casing 8 includes an upstream elongated rim (or upstream elongated edge) 6 and a downstream elongated rim (or downstream elongated edge) 7. Here, "upstream" means a direction opposite to the direction of displacement of the plasma source assembly 1 with respect to the surface 2 of the substrate during operation. Conversely, "downstream" refers to a direction equal to the direction of displacement of the surface 2 of the substrate relative to the direction of displacement of the plasma source assembly 1. The plasma processing outlet forms a region for depositing a layer on the surface 2 via relative movement of the surface 2 of the substrate along the plasma processing outlet. The substrate and its surface 2 can be moved by means of a conveyor belt (or transfer tray) 12 and the like.
電漿源組件1更包括定位於外殼8內的電漿產生區3，其中在操作期間使用第一製程氣體及第二製程氣體（矽烷、氨）以及可能的另外氣體（例如，Ar、H2 等等）來產生電漿。在一實施例中，電漿產生區3可包括具備內部導體4（連接至合適的電力供應器）的石英管，其允許將電漿產生於內部導體4周圍的電漿產生區中。所得的電漿粒子朝向外殼8的電漿處理出口流動，且在操作期間與基板2相互作用。在另外實施例中，外殼8包括外部導體。在另外實施例中，外殼8自身可充當外部導體。The plasma source assembly 1 further includes a plasma generating zone 3 positioned within the outer casing 8, wherein the first process gas and the second process gas (decane, ammonia) and possibly additional gases (eg, Ar, H2 ) are used during operation. Etc.) to produce plasma. In an embodiment, the plasma generating zone 3 may include a quartz tube having an inner conductor 4 (connected to a suitable power supply) that allows plasma to be generated in the plasma generating zone around the inner conductor 4. The resulting plasma particles flow toward the plasma processing outlet of the outer casing 8 and interact with the substrate 2 during operation. In a further embodiment, the outer casing 8 includes an outer conductor. In a further embodiment, the outer casing 8 itself may act as an outer conductor.
電漿源組件1可更包括第一製程氣體（例如，氨）通口9，第一製程氣體通口9經配置以將第一製程氣體釋放或注入至電漿源組件1（諸如其電漿製程區）中。再者，兩個第二製程氣體（例如，矽烷）通口10、11經配置為分別靠近於或極近接於上游細長邊沿6及下游細長邊沿7。更一般而言，一個或多個輸入通口9至11定位於電漿製程區中以用於將製程氣體提供至電漿源組件1。The plasma source assembly 1 can further include a first process gas (e.g., ammonia) port 9, the first process gas port 9 configured to release or inject a first process gas to the plasma source assembly 1 (such as its plasma) In the process area). Furthermore, the two second process gas (e.g., decane) ports 10, 11 are configured to be adjacent to or in close proximity to the upstream elongated rim 6 and the downstream elongated rim 7, respectively. More generally, one or more input ports 9 through 11 are positioned in the plasma processing zone for providing process gas to the plasma source assembly 1.
在典型的實施例中，電漿源組件1亦可包括磁體系統（magnet system）5。磁體系統5可更包括配置於電漿源組件1（諸如其外殼8）上的一或多個磁體。磁體系統5允許根據預定規格來約束及塑形電漿源組件1內的電漿。磁體系統5通常置放於相對於內部導體4的水平線上。In a typical embodiment, the plasma source assembly 1 may also include a magnet system 5. Magnet system 5 may further include one or more magnets disposed on plasma source assembly 1 (such as its outer casing 8). The magnet system 5 allows the plasma within the plasma source assembly 1 to be constrained and shaped according to predetermined specifications. The magnet system 5 is typically placed on a horizontal line relative to the inner conductor 4.
根據本發明，電漿源組件1經進一步配置以在流中提供粒子的濃度梯度，如自上游細長邊緣6至下游細長邊緣7所量測。如上文所提及，濃度梯度可存在於電漿源組件1內的各種類型的粒子中的任一者中。此等粒子可為離子、自由基、原子、電子以及分子。濃度梯度可為一個或多個層形成粒子，使得其引起層梯度。另外或替代地，濃度梯度可為一個或多個非層形成粒子，使得其藉由層形成粒子來影響層堆積，且亦引起層梯度。In accordance with the present invention, the plasma source assembly 1 is further configured to provide a concentration gradient of particles in the flow, as measured from the upstream elongated edge 6 to the downstream elongated edge 7. As mentioned above, the concentration gradient may be present in any of the various types of particles within the plasma source assembly 1. These particles can be ions, free radicals, atoms, electrons, and molecules. The concentration gradient can form particles for one or more layers such that they cause a layer gradient. Additionally or alternatively, the concentration gradient may be one or more non-layer forming particles such that it affects layer stacking by layer forming particles and also causes layer gradients.
在一實施例中，一個或多個輸入通口9至11包括：第一製程氣體（例如，氨）通口9，遠離於電漿處理出口；以及一個或多個（例如，兩個）第二製程氣體（例如，矽烷）通口10、11，經定位為分別靠近於上游細長邊沿6及下游細長邊沿7，例如，附接至電漿源組件1的上游細長邊沿6及下游細長邊沿7或作為電漿源組件1的上游細長邊沿6及下游細長邊沿7的部分。在一般的實施例項中，相比於第一製程氣體通口9，兩個第二製程氣體通口10、11在操作期間經定位為較接近於表面2，或如諸圖所指示，第一製程氣體通口9位於外殼8的頂部末端處，且兩個第二製程氣體通口10、11分別進一步在下方，鄰近於外殼8的上游細長邊沿6及下游細長邊沿7。此例示性實施例中的粒子源自NH3 、SiH4 ，且源自所使用的其他氣體。根據本發明的實施例，在包括矽烷（SiH4 ）的氣體流中提供此類的粒子濃度梯度，例如，藉由控制至矽烷通口10、11的不等流（其可（例如）藉由包含額外第二製程氣體通口10、11或不同數目個上游定位的第二製程氣體通口10及下游定位的第二製程氣體通口11而獲得）。電漿源組件1經配置以將SiNx 層合成至基板上，例如，作為非晶氫化氮化矽（a-SiNx）層。In one embodiment, the one or more input ports 9 through 11 include: a first process gas (eg, ammonia) port 9, remote from the plasma processing outlet; and one or more (eg, two) Two process gas (e.g., decane) ports 10, 11 are positioned adjacent to the upstream elongated rim 6 and the downstream elongated rim 7, respectively, for example, attached to the upstream elongated rim 6 and downstream elongated rim 7 of the plasma source assembly 1 Or as part of the upstream elongated rim 6 and the downstream elongated rim 7 of the plasma source assembly 1. In a general embodiment, the two second process gas ports 10, 11 are positioned closer to the surface 2 during operation than the first process gas port 9, or as indicated by the figures, A process gas port 9 is located at the top end of the outer casing 8, and the two second process gas ports 10, 11 are further below, adjacent to the upstream elongated rim 6 and the downstream elongated rim 7 of the outer casing 8. Examples of particles derived from NH 3, SiH 4, and is derived from other gases used in this exemplary embodiment. According to an embodiment of the present invention, there is provided a concentration gradient of such particles in the gas stream comprising Silane (SiH 4), for example, to control by varying the flow Silane port 10 and 11 (which may be (e.g.) by Included are additional second process gas ports 10, 11 or a different number of upstream positioned second process gas ports 10 and downstream positioned second process gas ports 11). The plasma source assembly 1 is configured to synthesize a SiN x layer onto a substrate, for example, as an amorphous hydrogenated hafnium nitride (a-SiNx) layer.
流中的上述的粒子濃度梯度允許（例如）梯度抗反射塗層（ARC）朝向其被沈積的基板的Si濃度增加，使得改良表面2的表面鈍化，但亦增加對UV光降解及電位誘發性降解的抵抗。The above-described particle concentration gradient in the flow allows, for example, an increase in the Si concentration of the gradient anti-reflective coating (ARC) toward the substrate on which it is deposited, such that the surface of the surface 2 is passivated, but also increases the degradation of UV light and potential-induced Resistance to degradation.
舉例而言，在一實施例中，電漿源組件1經配置以提供呈噴出或釋放於兩個矽烷通口10、11之間的矽烷氣體的量的梯度。此實施例的優點為（例如）：在單次通過中即獲得在基板上的梯度a-SiNx:H層，藉此增加朝向基板的Si濃度。For example, in one embodiment, the plasma source assembly 1 is configured to provide a gradient in the amount of decane gas that is ejected or released between the two decane ports 10, 11. An advantage of this embodiment is, for example, that a gradient a-SiNx:H layer on the substrate is obtained in a single pass, thereby increasing the Si concentration towards the substrate.
Si的較高濃度或Si/N梯度的存在充當針對（例如）Na+離子的適當阻障，藉此縮減電位誘發性降解。其亦縮減接近於Si基板的K中心，此會縮減n型電池中的UV光降解效應。因為正固定電荷降低，所以經高度摻雜的硼層的鈍化被改良。因為較少K中心存在於基板附近，所以獲得較UV穩定的層。此外，因為缺陷（Dit）亦降低，所以經高度摻雜的磷層上的鈍化同樣地被改良。The presence of a higher concentration of Si or a Si/N gradient acts as a suitable barrier to, for example, Na+ ions, thereby reducing potential-induced degradation. It also shrinks close to the K center of the Si substrate, which reduces the UV photodegradation effect in the n-type battery. Passivation of the highly doped boron layer is improved because the positive fixed charge is reduced. Since less K center is present near the substrate, a more UV stable layer is obtained. Furthermore, since the defect (Dit) is also lowered, the passivation on the highly doped phosphor layer is likewise improved.
圖2展示具有用於根據本發明的電漿源組件1的額外矽烷通口15的實施例。在所展示的實施例中，電漿源組件1可更包括定位於上游細長邊緣6上游的額外輸入通口15。此額外矽烷通口15的優點為：流中的粒子的濃度梯度被產生，此會在（例如）a-SiNx:H層中提供改良式較高梯度。較高梯度進一步促進表面鈍化以及UV光降解及電位誘發性降解的縮減。替代地或另外，可使用定位於下游細長邊緣7下游的額外輸入通口15來實現額外製程氣體的添加。Figure 2 shows an embodiment with an additional decane port 15 for a plasma source assembly 1 in accordance with the present invention. In the illustrated embodiment, the plasma source assembly 1 can further include an additional input port 15 positioned upstream of the upstream elongated edge 6. An advantage of this additional decane port 15 is that a concentration gradient of particles in the stream is produced which provides a modified higher gradient in, for example, the a-SiNx:H layer. Higher gradients further promote surface passivation as well as reduction of UV photodegradation and potential-induced degradation. Alternatively or additionally, additional process ports 15 positioned downstream of the downstream elongated edge 7 may be used to effect the addition of additional process gases.
圖3展示在如本發明中所使用的電漿源組件1上游具有另外電漿源組件1'的實施例。在所展示的實施例中，提供另外電漿源組件1'，且另外電漿源組件1'定位於電漿源組件1的上游細長邊緣6上游以用於提供額外的粒子流。此實施例進一步促進流中的粒子的濃度梯度，如自電漿源組件1的上游細長邊緣（上游細長邊沿）6至下游細長邊緣（上游細長邊沿）7所量測。另外的電漿源組件1'包括提供另外的矽烷氣體流的另外矽烷通口11'。此在電漿源組件1的上游細長邊沿6與下游細長邊沿7之間促進流中的粒子的濃度梯度。另外電漿源組件1'亦可包括用以約束電漿及/或控制粒子流的磁體系統5'。Figure 3 shows an embodiment with an additional plasma source assembly 1' upstream of the plasma source assembly 1 as used in the present invention. In the illustrated embodiment, an additional plasma source assembly 1' is provided, and additionally a plasma source assembly 1' is positioned upstream of the upstream elongated edge 6 of the plasma source assembly 1 for providing additional particle flow. This embodiment further promotes the concentration gradient of the particles in the stream, as measured from the upstream elongated edge (upstream elongated edge) 6 to the downstream elongated edge (upstream elongated edge) 7 of the plasma source assembly 1. The additional plasma source assembly 1' includes an additional decane port 11' that provides additional decane gas flow. This promotes a concentration gradient of particles in the flow between the upstream elongated rim 6 and the downstream elongated rim 7 of the plasma source assembly 1. Additionally, the plasma source assembly 1' may also include a magnet system 5' for constraining the plasma and/or controlling the flow of particles.
替代地或另外，可添加源自下游電漿源組件1'的額外粒子流。Alternatively or additionally, additional particle streams from the downstream plasma source component 1 ' may be added.
圖4展示具有如用於根據本發明的電漿增強式化學氣相沈積裝置的電漿源組件1的替代矽烷通口組態的實施例。在所展示的實施例中，相比於下游定位的輸入通口11（其可為第二製程氣體通口，例如，矽烷通口），上游定位的輸入通口10（其亦可為第二製程氣體通口，例如，矽烷通口）提供於較接近於或較遠離於電漿產生區3的電漿製程區中。因此，上游定位的第二製程氣體通口10及下游定位的第二製程氣體通口11的定位相對於電漿源組件1的電漿產生區3（在外殼8內居中）不對稱。此實施例提供替代矽烷通口10、11組態以用於在流中產生粒子的濃度梯度，如自電漿源組件1的上游細長邊沿6至下游細長邊沿7所量測。在本發明的另一實施例中，可藉由將額外通口置放為接近於輸入通口11以提供額外製程氣體（例如NH3 ）來獲得梯度。4 shows an embodiment of an alternative decane port configuration with a plasma source assembly 1 as used in a plasma enhanced chemical vapor deposition apparatus in accordance with the present invention. In the illustrated embodiment, the upstream positioned input port 10 (which may also be the second) is compared to the downstream positioned input port 11 (which may be a second process gas port, eg, a decane port) A process gas port, such as a decane port, is provided in a plasma processing zone that is closer to or further from the plasma generating zone 3. Accordingly, the positioning of the upstreamly positioned second process gas port 10 and the downstream positioned second process gas port 11 is asymmetrical with respect to the plasma generating zone 3 of the plasma source assembly 1 (centered within the outer casing 8). This embodiment provides an alternative decane port 10, 11 configuration for generating a concentration gradient of particles in the flow, as measured from the upstream elongated rim 6 to the downstream elongated rim 7 of the plasma source assembly 1. Embodiment, an additional port may be disposed by In another embodiment of the present invention is close to the input port 11 to provide additional process gas (e.g. NH 3) to obtain a gradient.
在實施例群組中，在操作期間，來自兩個輸入（矽烷）通口10、11中的每一者的矽烷氣體流可相等。在另一實施例群組中，相比於來自下游定位的輸入（矽烷）通口11的容積流，來自上游定位的輸入（矽烷）通口10的容積流可較高（或較低），藉此進一步提供如上文所提及的梯度。可藉由相比於圖1至圖3所展示的實施例進一步向右及/或進一步在上方移動輸入（矽烷）部件10來獲得自輸入（矽烷）通口10至電漿產生區的距離減小。In the group of embodiments, the decane gas flow from each of the two input (decane) ports 10, 11 may be equal during operation. In another embodiment group, the volumetric flow from the upstream positioned input (decane) port 10 may be higher (or lower) than the volumetric flow from the downstream positioned input (decane) port 11. Thereby the gradient as mentioned above is further provided. The distance from the input (decane) port 10 to the plasma generating region can be reduced by moving the input (decane) component 10 further to the right and/or further above the embodiment shown in Figures 1-3. small.
圖5展示具有抽吸泵16以作為根據本發明的電漿增強式化學氣相沈積裝置的電漿源組件1的部分的實施例，抽吸泵16相對於電漿源組件1置放於關鍵位置。在所展示的實施例中，抽吸泵16可經置放為近接於電漿源組件1，以用於自電漿製程區擷取氣體流，以用於經由電漿製程區在流中產生粒子的濃度梯度。在例示性實施例中，近接於電漿源組件1的抽吸泵16可定位於下游細長邊沿7下游（例如，直接在下游，但抽吸泵16亦可經定位為與下游細長邊沿7相隔一距離）。抽吸泵16可操作以移除下游矽烷通口11附近的粒子，藉此在流中產生粒子的濃度梯度，如自電漿源組件1的上游細長邊沿6至下游細長邊沿7所量測。一般而言，提供定位於上游細長邊沿6或下游細上游長邊沿7上游或下游的抽吸泵16。Figure 5 shows an embodiment of a portion of a plasma source assembly 1 having a suction pump 16 as a plasma enhanced chemical vapor deposition apparatus according to the present invention. The suction pump 16 is placed in a key position relative to the plasma source assembly 1. position. In the illustrated embodiment, the suction pump 16 can be placed proximate to the plasma source assembly 1 for drawing a gas stream from the plasma processing zone for use in the flow via the plasma processing zone. The concentration gradient of the particles. In an exemplary embodiment, the suction pump 16 proximate the plasma source assembly 1 can be positioned downstream of the downstream elongated rim 7 (eg, directly downstream), but the suction pump 16 can also be positioned to be spaced from the downstream elongated rim 7 a distance). The suction pump 16 is operable to remove particles in the vicinity of the downstream decane opening 11, thereby producing a concentration gradient of particles in the flow, as measured from the upstream elongated rim 6 of the plasma source assembly 1 to the downstream elongated rim 7. In general, a suction pump 16 positioned upstream or downstream of the upstream elongated rim 6 or downstream fine upstream rim 7 is provided.
圖6展示具有經塑形電漿源以作為根據本發明的電漿源組件1的部分的實施例。在所展示的實施例中，與接近於下游細長邊沿7之處相比較，電漿源組件1的電漿產生區3經塑形（以預定方式）以在接近於上游細長邊沿6之處提供較高或較低濃度的粒子。在獲得相似效應的另外實施例中，電漿產生區3（例如）經定位為相對於上游細長邊沿6及下游細長邊沿7不對稱。粒子的濃度改變提供（例如）梯度a-SiNx:H層。亦可藉由以適當的相互定向在如本文中所描述的電漿源組件內具有多個電漿產生區3來實施經塑形電漿源。Figure 6 shows an embodiment with a shaped plasma source as part of a plasma source assembly 1 in accordance with the present invention. In the illustrated embodiment, the plasma generating zone 3 of the plasma source assembly 1 is shaped (in a predetermined manner) to provide near the upstream elongated rim 6 as compared to where it is adjacent to the downstream elongated rim 7. Higher or lower concentration particles. In a further embodiment in which similar effects are obtained, the plasma generating zone 3 is, for example, positioned to be asymmetrical with respect to the upstream elongated rim 6 and the downstream elongated rim 7. The change in concentration of the particles provides, for example, a gradient a-SiNx:H layer. The shaped plasma source can also be implemented by having a plurality of plasma generating zones 3 within the plasma source assembly as described herein with appropriate mutual orientation.
在有利的實施例中，電漿產生區3可包括多個內部導體4、4'，以用於與接近於下游細長邊沿7之處相比較，在接近於上游細長邊沿6之處在流中提供較高濃度的粒子。多個內部導體4、4'可經配置為使得在接近於上游細長邊沿6之處獲得較高或較低濃度的粒子。應注意，在替代實施例中，電漿源組件1可包括經塑形以根據本發明來提供較高或較低濃度的粒子的單一內部導體4。In an advantageous embodiment, the plasma generating zone 3 may comprise a plurality of inner conductors 4, 4' for use in a flow close to the upstream elongated rim 6 as compared to the downstream elongated rim 7 Provide a higher concentration of particles. The plurality of inner conductors 4, 4' can be configured such that a higher or lower concentration of particles is obtained near the upstream elongated rim 6. It should be noted that in an alternate embodiment, the plasma source assembly 1 can include a single inner conductor 4 that is shaped to provide a higher or lower concentration of particles in accordance with the present invention.
鑒於上文所揭露且如圖1至圖6所描繪的電漿源組件1的各種實施例，電漿源組件1可更包括連接至一個或多個輸入通口9、10、11（以及選用的額外輸入通口15（若存在））的輸入氣體流控制裝置。控制裝置經配置以相對於下游定位的輸入通口11增加或減低至上游定位的輸入通口10的容積流，或一般而言，控制至上游定位的第二製程氣體通口10的容積流，其不同於至下游定位的第二製程氣體通口11的容積流。此實施例確保至兩個輸入通口10、11（例如，被體現為矽烷輸入通口）之間的電漿製程區的不對稱容積流，使得在電漿源組件1的上游細長邊沿6至下游細長邊沿7之間獲得流中的粒子的濃度梯度。亦即，與下游細長邊沿7附近的某些類型的粒子的濃度相比較，上游細長邊沿6附近的某些類型的粒子的濃度較高。In view of the various embodiments of the plasma source assembly 1 disclosed above and as depicted in FIGS. 1 through 6, the plasma source assembly 1 may further include a connection to one or more input ports 9, 10, 11 (and optional The input gas flow control device of the additional input port 15 (if present). The control device is configured to increase or decrease the volumetric flow to the upstream positioned input port 10 relative to the downstream positioned input port 11, or, in general, to the volumetric flow of the upstream positioned second process gas port 10, It differs from the volumetric flow of the second process gas port 11 positioned downstream. This embodiment ensures an asymmetric volumetric flow to the plasma processing zone between the two input ports 10, 11 (e.g., embodied as a decane input port) such that the elongated edge 6 is upstream of the plasma source assembly 1 A concentration gradient of particles in the stream is obtained between the downstream elongated edges 7. That is, the concentration of certain types of particles near the upstream elongated rim 6 is higher compared to the concentration of certain types of particles near the downstream elongated rim 7.
如同電漿源組件1的所有實施例，粒子的濃度梯度允許將（例如）a-SiNx:H的梯度層沈積於基板上，梯度層不僅改良太陽能電池的抗反射性質以及表面鈍化，而且其中梯度層亦縮減UV光降解以及電位誘發性降解。As with all embodiments of the plasma source assembly 1, the concentration gradient of the particles allows a gradient layer of, for example, a-SiNx:H to be deposited on the substrate, the gradient layer not only improving the anti-reflective properties of the solar cell and surface passivation, but also the gradient The layer also reduces UV photodegradation and potential-induced degradation.
易於顯而易見的是，藉由使用本發明的電漿源組件1而獲得的太陽能電池可用於光伏打模組（photovoltaic module）的製造，所述模組可包括多個此類太陽能電池，此類太陽能電池包括（例如）a-SiNx:H的梯度層。It will be readily apparent that a solar cell obtained by using the plasma source assembly 1 of the present invention can be used in the manufacture of a photovoltaic module, which can include a plurality of such solar cells, such solar energy The battery includes, for example, a gradient layer of a-SiNx:H.
在另一態樣中，本發明是關於一種將梯度SiNx層（尤其是梯度a-SiNx:H層，亦即，使用電漿增強式化學氣相沈積而獲得的水合非晶SiNx層）提供於太陽能電池上的方法。出於方便起見而參考所有圖1至圖6。In another aspect, the present invention is directed to a gradient SiNx layer (particularly a gradient a-SiNx:H layer, that is, a hydrated amorphous SiNx layer obtained using plasma enhanced chemical vapor deposition). The method on the solar cell. All of Figures 1 to 6 are referred to for convenience.
關於將粒子流提供至基板的本發明的方法實施例包括以下步驟：將電漿增強式化學氣相沈積（PECVD）裝置的電漿源組件1提供於待處理的基板的表面2上方，以用於將層沈積至表面2上。電漿源組件1包括具有電漿處理出口的外殼，電漿處理出口在操作中接近於表面2且形成電漿製程區以用於藉由表面2沿著電漿處理出口的相對移動而將層沈積於表面2上。外殼8包括實質上垂直於表面2的相對移動而延伸的上游細長邊緣（或上游細長邊沿）6以及下游細長邊緣（或下游細長邊沿）7。表面2在自上游細長邊沿6朝向下游細長邊沿7的方向上沿著電漿處理出口移動。電漿源組件1更包括定位於電漿製程區中以用於將製程氣體提供至外殼8內的電漿產生區3的一個或多個輸入通口9至11。方法更包括在流中提供粒子的濃度梯度，如自電漿源1的上游細長邊沿6至下游細長邊沿7所量測。此處，梯度可被視為上游細長邊沿6附近的一種或多種某一（某些）類型的粒子的濃度高於下游細長邊沿7附近的此等粒子的濃度。應注意，所獲得的流梯度亦可相對，亦即，自低至高。An embodiment of the method of the present invention for providing a stream of particles to a substrate includes the steps of providing a plasma source assembly 1 of a plasma enhanced chemical vapor deposition (PECVD) apparatus over the surface 2 of the substrate to be processed for use The layer is deposited onto the surface 2. The plasma source assembly 1 includes a housing having a plasma processing outlet, the plasma processing outlet being in operation proximate to the surface 2 and forming a plasma processing region for layering by relative movement of the surface 2 along the plasma processing outlet Deposited on the surface 2. The outer casing 8 includes an upstream elongated edge (or upstream elongated rim) 6 and a downstream elongated edge (or downstream elongated rim) 7 that extend substantially perpendicular to the relative movement of the surface 2. The surface 2 moves along the plasma processing outlet in a direction from the upstream elongated rim 6 towards the downstream elongated rim 7. The plasma source assembly 1 further includes one or more input ports 9 through 11 positioned in the plasma processing zone for supplying process gases to the plasma generating zone 3 within the outer casing 8. The method further includes providing a concentration gradient of the particles in the stream, as measured from the upstream elongated edge 6 of the plasma source 1 to the downstream elongated edge 7. Here, the gradient can be considered as the concentration of one or more of the certain (some) types of particles in the vicinity of the upstream elongated rim 6 that is higher than the concentration of such particles in the vicinity of the downstream elongated rim 7. It should be noted that the obtained flow gradients can also be relative, that is, from low to high.
根據本發明，提供上文所提及的梯度會允許隨著基板沿著電漿處理出口移動而將梯度層（諸如梯度SiNx或a-SiNx:H層）沈積於基板上。梯度層不僅改良鈍化，而且縮減UV光降解以及電位誘發性降解。當應用於類型與如本文中針對例示性實施例所論述的例示性SiNx不同的層時，梯度層可展示不同特性且提供其他益處。可使用本文中所描述的實施例以獲得梯度層而產生的層實例是氧化鋁（AlOx）、a-Si（p摻雜或n摻雜）、多晶Si（p摻雜或n摻雜）。In accordance with the present invention, providing the gradients mentioned above will allow a gradient layer (such as a gradient SiNx or a-SiNx:H layer) to be deposited on the substrate as the substrate moves along the plasma processing exit. The gradient layer not only improves passivation, but also reduces UV photodegradation and potential-induced degradation. When applied to a layer of a different type than the exemplary SiNx as discussed herein for the exemplary embodiments, the gradient layer can exhibit different characteristics and provide other benefits. Examples of layers that can be produced using the embodiments described herein to obtain a graded layer are alumina (AlOx), a-Si (p-doped or n-doped), poly-crystalline Si (p-doped or n-doped). .
在關於使用電漿增強式化學氣相沈積來獲得梯度層（例如，SiNx:H層）的實施例中，一個或多個輸入通口包括遠離於電漿處理出口的第一製程氣體（例如，氨）通口9，以及經定位為分別靠近於上游細長邊沿6及/或下游細長邊沿7的一個或多個（例如，兩個）第二製程氣體（例如，矽烷）通口10、11。換言之，第一製程氣體通口9及兩個或多於兩個第二製程氣體通口10、11在外殼8內定位於電漿產生區3的相對側上。In embodiments relating to the use of plasma enhanced chemical vapor deposition to obtain a graded layer (eg, a SiNx:H layer), the one or more input ports include a first process gas that is remote from the plasma processing outlet (eg, The ammonia port 9 and one or more (e.g., two) second process gas (e.g., decane) ports 10, 11 positioned adjacent to the upstream elongated edge 6 and/or the downstream elongated edge 7, respectively. In other words, the first process gas port 9 and the two or more second process gas ports 10, 11 are positioned within the outer casing 8 on opposite sides of the plasma generating zone 3.
鑒於圖2，方法可更包括使用定位於上游細長邊沿6上游的額外輸入通口15來添加額外製程氣體（例如，矽烷）的步驟。此類額外輸入（例如，矽烷）通口15提供各種類型的粒子的不對稱流，亦即，梯度，如自上游細長邊沿6至下游細長邊沿7所量測，藉此進一步促進在基板2上獲得例如SiNx的梯度層的製程。In view of FIG. 2, the method may further include the step of adding an additional process gas (eg, decane) using an additional input port 15 positioned upstream of the upstream elongated rim 6. Such additional input (e.g., decane) port 15 provides an asymmetric flow of various types of particles, i.e., a gradient, as measured from the upstream elongated rim 6 to the downstream elongated rim 7, thereby further facilitating on the substrate 2. A process for obtaining a gradient layer such as SiNx is obtained.
參考圖3，為了在上游細長邊沿6與下游細長邊沿7之間提供不同類型的粒子的不對稱分佈，方法亦可包括添加源自上游電漿源組件1'的額外粒子流的步驟。隨著一種類型的粒子進入上游細長邊沿6處的腔室，上游電漿源組件1'將所述粒子的較高濃度提供至（下游）電漿源組件1的電漿製程區，藉此允許將梯度層沈積於基板上。例如，當上游電漿源組件1'正在極低電漿工作級下操作（或甚至關斷）時，主要非離子化粒子及/或非自由基化粒子（取決於所使用的溫度）將進入電漿製程區，藉此改變此等類型的粒子的濃度梯度。Referring to Figure 3, in order to provide an asymmetric distribution of different types of particles between the upstream elongated rim 6 and the downstream elongated rim 7, the method may also include the step of adding additional particle streams from the upstream plasma source assembly 1 '. As one type of particle enters the chamber at the upstream elongated rim 6, the upstream plasma source assembly 1' provides a higher concentration of the particle to the plasma processing zone of the (downstream) plasma source assembly 1, thereby allowing A gradient layer is deposited on the substrate. For example, when the upstream plasma source component 1' is operating (or even turned off) at a very low plasma working level, the primary non-ionized particles and/or non-free radicalized particles (depending on the temperature used) will enter A plasma processing zone whereby the concentration gradient of these types of particles is varied.
在有利的實施例中，方法可包括至上游定位的第二製程氣體通口10的容積流不同於至下游定位的第二製程氣體通口11的容積流的特徵。此實施例極有效於在上游細長邊沿6附近產生某些類型的粒子的較高濃度，使得產生此等粒子的濃度梯度。In an advantageous embodiment, the method may include the feature flow of the second process gas port 10 positioned upstreamly different from the volume flow of the second process gas port 11 positioned downstream. This embodiment is extremely effective in producing a higher concentration of certain types of particles near the upstream elongated rim 6 such that a concentration gradient of such particles is produced.
在如圖4所描繪的實施例中，方法可包括相比於下游定位的第二製程氣體（矽烷）通口11將上游定位的第二製程氣體（矽烷）通口10在電漿製程區中定位為較接近於或較遠離於電漿產生區3的步驟。此例示性實施例允許電漿產生區3對來自上游矽烷通口10的粒子濃度產生的影響增加。In an embodiment as depicted in FIG. 4, the method can include placing a second process gas (decane) port 10 positioned upstream in the plasma processing zone compared to the downstream process second process gas (decane) port 11 The step of positioning is closer to or farther from the plasma generating zone 3. This exemplary embodiment allows the plasma generation zone 3 to have an increased effect on the particle concentration from the upstream decane vent 10.
在替代實施例中，參見（例如）圖6，方法亦可包括移除上游細長邊沿6或下游細長邊沿7上游或下游的接近於上游細長邊沿6或下游細長邊沿7的粒子。此實施例促進縮減下游細長邊沿7附近的粒子。以此方式，在上游細長邊沿6與下游細長邊沿7之間提供粒子的濃度梯度。In an alternate embodiment, see, for example, FIG. 6, the method can also include removing particles upstream or downstream of the upstream elongated rim 6 or downstream elongated rim 7 that are proximate to the upstream elongated rim 6 or the downstream elongated rim 7. This embodiment facilitates the reduction of particles in the vicinity of the downstream elongated rim 7. In this way, a concentration gradient of particles is provided between the upstream elongated rim 6 and the downstream elongated rim 7.
在例示性實施例中（參見圖5），抽吸泵16可配置於下游細長邊沿7下游以實施粒子的此（局域）移除。在此實施例中，抽吸泵16移除接近於下游細長邊沿7的粒子的部分以在流中獲得粒子梯度且因此在基板上的梯度SiNx層中獲得粒子梯度。In an exemplary embodiment (see Figure 5), a suction pump 16 may be disposed downstream of the downstream elongated rim 7 to effect this (local) removal of particles. In this embodiment, the suction pump 16 removes portions of the particles that are proximate to the downstream elongated rim 7 to obtain a particle gradient in the flow and thus obtain a particle gradient in the gradient SiNx layer on the substrate.
可設想另外替代實施例以用於在基板上獲得梯度層。舉例而言，在一實施例中，方法可更包括塑形電漿產生區，以用於與在接近於下游細長邊沿7之處相比較，在接近於上游細長邊沿6之處提供較高或較低濃度的粒子。可藉由（例如）利用內部導體4的特定形狀來達成電漿產生區3的此類塑形製程。替代地，在一實施例中，方法可包括利用呈特定空間圖案的多個內部導體4、4'以用於獲得經塑形電漿產生區3。方法可接著包括控制多個內部導體4、4'以用於獲得所要經塑形電漿產生區3的步驟。此外，在甚至另外實施例中，可將電漿產生區3定位為相對於上游細長邊沿6及下游細長邊沿7不對稱，以便獲得相似效應。Further alternative embodiments are envisioned for obtaining a gradient layer on the substrate. For example, in one embodiment, the method may further include shaping the plasma generating zone for providing a higher or nearer upstream elongated edge 6 than when approaching the downstream elongated rim 7 Lower concentration of particles. Such a shaping process of the plasma generating zone 3 can be achieved, for example, by utilizing the specific shape of the inner conductor 4. Alternatively, in an embodiment, the method can include utilizing a plurality of inner conductors 4, 4' in a particular spatial pattern for obtaining the shaped plasma generating zone 3. The method can then include the step of controlling the plurality of inner conductors 4, 4' for obtaining the shaped plasma generating zone 3. Moreover, in even other embodiments, the plasma generating zone 3 can be positioned asymmetrical with respect to the upstream elongated rim 6 and the downstream elongated rim 7 to achieve a similar effect.
在另一實施例中，可使承載基板2的輸送單元的速度變化，使得將在沈積期間經由修改速度來增強存在於電漿源組件中的任何梯度。In another embodiment, the speed of the transport unit carrying the substrate 2 can be varied such that any gradients present in the plasma source assembly will be enhanced via the modified speed during deposition.
如同本發明的電漿源組件1，當然有可能提供包括多個太陽能電池或光伏打電池的光伏打模組，太陽能電池或光伏打電池包括藉由如上文所揭露的方法而沈積的層。在SiNx的狀況下，此類光伏打模組接著將不僅得益於改良式表面鈍化，而且得益於太陽能電池的經縮減的UV光誘發性降解以及電位誘發性降解（PID）。As with the plasma source assembly 1 of the present invention, it is of course possible to provide a photovoltaic module comprising a plurality of solar cells or photovoltaic cells, the solar cells or photovoltaic cells comprising layers deposited by the method as disclosed above. In the case of SiNx, such photovoltaic modules will then benefit not only from improved surface passivation, but also from reduced UV light-induced degradation and potential-induced degradation (PID) of solar cells.
在以上描述中，已將SiNx用作運用本發明的方法及電漿源組件實施例而沈積的梯度層的實例。所獲得的層類型並不限於SiNx，而是可擴展至運用電漿增強式化學氣相沈積而製造的任何類型的太陽能電池上的任何層。所得層可具有除了改良式鈍化、經縮減的UV光降解以及經縮減的電位誘發性降解以外的其他益處。In the above description, SiNx has been used as an example of a gradient layer deposited using the method of the present invention and the plasma source assembly embodiment. The type of layer obtained is not limited to SiNx, but can be extended to any layer on any type of solar cell fabricated using plasma enhanced chemical vapor deposition. The resulting layer can have other benefits in addition to improved passivation, reduced UV photodegradation, and reduced potential-induced degradation.
上文已參考如圖式所展示的數個例示性實施例而描述本發明的實施例。一些部件或元件的修改及替代實施方案是可能的，且包含於如隨附申請專利範圍中所定義的保護範疇中。Embodiments of the present invention have been described above with reference to a few exemplary embodiments shown in the drawings. Modifications and alternative embodiments of some of the components or elements are possible and are included in the scope of protection as defined in the accompanying claims.
1‧‧‧電漿源組件/電漿源
1'‧‧‧電漿源組件
2‧‧‧基板/表面
3‧‧‧電漿產生區
4、4'‧‧‧內部導體
5、5'‧‧‧磁體系統
6‧‧‧上游細長邊沿/上游細長邊緣
7‧‧‧下游細長邊沿/下游細長邊緣
8‧‧‧外殼
9‧‧‧輸入通口/第一製程氣體通口
10、11‧‧‧輸入通口/第二製程氣體通口/矽烷通口
11'‧‧‧矽烷通口
12‧‧‧傳送帶/傳送托盤
15‧‧‧輸入通口/矽烷通口
16‧‧‧抽吸泵1‧‧‧ Plasma source component / plasma source
1'‧‧‧ Plasma source components
2‧‧‧Substrate/Surface
3‧‧‧The plasma generation area
4, 4'‧‧‧Internal conductor
5, 5'‧‧‧ magnet system
6‧‧‧Upstream slender edge/upstream slender edge
7‧‧‧ downstream slender edge / downstream slender edge
8‧‧‧ Shell
9‧‧‧Input port/first process gas port
10, 11‧‧‧ Input port / second process gas port / decane port
11'‧‧‧ 矽通口口
12‧‧‧Conveyor belt/transfer tray
15‧‧‧Input port/decane port
16‧‧‧ suction pump
下文將參考隨附圖式而使用數個例示性實施例來更詳細地論述本發明，在圖式中The invention will be discussed in more detail below with reference to a number of illustrative embodiments, in the drawings
圖1展示根據本發明的電漿源組件的實施例。Figure 1 shows an embodiment of a plasma source assembly in accordance with the present invention.
圖2展示根據本發明的具有額外矽烷通口的電漿源組件的實施例。2 shows an embodiment of a plasma source assembly with additional decane ports in accordance with the present invention.
圖3展示具有在根據本發明的電漿源組件上游的另外電漿源的實施例。Figure 3 shows an embodiment with an additional plasma source upstream of the plasma source assembly in accordance with the present invention.
圖4展示具有根據本發明的電漿源組件的替代矽烷通口組態的實施例。4 shows an embodiment of an alternative decane port configuration with a plasma source assembly in accordance with the present invention.
圖5展示具有抽吸泵以作為根據本發明的電漿源組件的部分的實施例。Figure 5 shows an embodiment with a suction pump as part of a plasma source assembly in accordance with the present invention.
圖6展示具有經塑形電漿源以作為根據本發明的電漿源組件的部分的實施例。Figure 6 shows an embodiment with a shaped plasma source as part of a plasma source assembly in accordance with the present invention.
Claims (23)
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| NL2016487A NL2016487B1 (en) | 2016-03-24 | 2016-03-24 | Method of obtaining a graded PECVD layer and plasma source assembly. |
| ??2016487 | 2016-03-24 |
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| TW201805464A true TW201805464A (en) | 2018-02-16 |
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| WO2013103609A1 (en) * | 2012-01-03 | 2013-07-11 | Applied Materials, Inc. | Advanced platform for passivating crystalline silicon solar cells |
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