TW201803078A - Apparatus and method of forming electromagnetic interference shield layer for semiconductor package - Google Patents

Abstract

The invention relates to an apparatus and a method of forming an electromagnetic interference shield layer for a semiconductor package. More specifically, the invention relates to an apparatus and a method of forming an electromagnetic interference shield layer for a semiconductor package that apply a conductive fluid to an accurate region of a material such as a semiconductor part in accordance with an accurate capacity. The apparatus and the method of forming an electromagnetic interference shield layer of the invention provide an effect as follows: accurately adjusting a coating amount of the conductive fluid and finely adjusting a coating area of the conductive fluid.

Description

Electromagnetic wave shielding layer forming device and method for semiconductor package

The present invention relates to an apparatus and method for forming an electromagnetic wave shielding layer for a semiconductor package, and more particularly to an apparatus for forming a shielding layer for blocking electromagnetic waves on an upper surface and a side surface of a semiconductor package. A method of forming an electromagnetic wave shielding layer.

Usually, an electromagnetic wave shielding layer is formed on the outer surface of the semiconductor package in order to prevent the release of electromagnetic waves or damage of internal circuits due to external electromagnetic waves.

Previously, an electromagnetic wave shielding layer was formed by a method of forming a conductive film in a semiconductor package by a sputtering (vacuum evaporation) process.

In the case of a method using a sputtering process, there is a problem that a conductive film cannot be formed on a side surface of a semiconductor package with a uniform thickness. Moreover, the heat generated in the sputtering process may cause damage to the semiconductor elements inside the semiconductor package. There is also a problem that the cost of the process itself becomes high.

Although a method of applying a conductive liquid to a semiconductor package by using a pump for applying a liquid has been attempted, there is a problem that it is difficult to apply a conductive liquid to the side surface of the semiconductor package. Further, there is a problem in that the conductive film cannot be applied to the conductive film at a uniform thickness between the corners of the semiconductor and the positions of the corners due to the tension of the surface of the conductive liquid. In particular, in the prior method of applying a liquid by continuously ejecting a droplet droplet used in a liquid dispenser, there is a high possibility that a problem of thickness unevenness occurs due to the surface tension of the liquid.

[Problem to be Solved by the Invention] The present invention has been made to solve the above problems, and an object thereof is to provide a semiconductor package capable of applying a conductive liquid to a top surface and a side surface of a semiconductor package with a uniform thickness. The electromagnetic wave shielding layer forming device and method. [Means for solving the problem]

The electromagnetic wave shielding layer forming apparatus of the semiconductor package of the present invention for solving the above-described object is a semiconductor package electromagnetic wave shielding layer forming apparatus for coating a conductive liquid for forming an electromagnetic wave shielding layer on an outer surface of a semiconductor package, which includes the first a spray module, a first spray transfer unit, a second spray module, a second spray transfer unit, and a material transfer unit. The first spray module includes: a first nozzle disposed in a lower direction so as to be sprayable with the conductive liquid; and a tilting nozzle to spray the conductive liquid sprayed by the first nozzle The direction is changed to face the side surface of the semiconductor package, and the gas is ejected in a direction inclined with respect to the vertical direction; the first spray supply portion supplies the conductive liquid to the first nozzle in a spray form; the first spray The transfer unit transfers the first nozzle and the tilt nozzle of the first spray module with respect to the semiconductor package; the second spray module includes: a second nozzle to be openable to an upper surface of the semiconductor package Forming the conductive liquid toward the upper surface of the semiconductor package; the second spray supply portion supplies the conductive liquid to the second nozzle in a spray form; the second spray transfer unit is opposite to the second spray transfer unit Transmitting, by the semiconductor package, the second nozzle of the second spray module; and transferring the material transfer unit relative to the first spray module and the second spray module Said semiconductor package.

Moreover, the electromagnetic wave shielding layer forming method of the semiconductor package of the present invention is a method for forming an electromagnetic wave shielding layer of a semiconductor package in which a conductive liquid is applied to form an electromagnetic wave shielding layer on an outer surface of a semiconductor package, and is characterized in that: (a) a first spray nozzle having a first nozzle disposed in a lower direction, an inclined nozzle formed to inject a gas in a direction inclined with respect to a vertical direction, and a first spray supply for supplying the conductive liquid to the first nozzle in a spray form a first spray module for spraying the conductive liquid onto the side surface of the semiconductor package; (b) using a second nozzle formed to face the upper surface of the semiconductor package, and in a spray form a second nozzle supplying a second spray module of the second spray supply portion of the conductive liquid to eject the conductive liquid onto an upper surface of the semiconductor package; and (c) the semiconductor The step of transferring the package from the lower side of the first spray module and the second spray module to the lower side of the other. [Effects of the Invention]

The electromagnetic wave shielding layer forming apparatus and method of the semiconductor package of the present invention has an advantage that the conductive liquid can be applied to the upper surface and the side surface of the semiconductor package with a uniform thickness.

Moreover, the electromagnetic wave shielding layer forming apparatus and method of the semiconductor package of the present invention has an advantage of being able to accurately adjust the thickness of the conductive liquid applied to the upper surface and the side surface of the semiconductor package.

Hereinafter, a detailed description will be given with reference to the drawings of the electromagnetic wave shielding layer forming apparatus of the semiconductor package of the present invention.

1 is a plan view of an electromagnetic wave shielding layer forming apparatus for a semiconductor package according to an embodiment of the present invention, and FIG. 2 is a front view of the electromagnetic wave shielding layer forming apparatus of the semiconductor package shown in FIG. 1.

Referring to FIG. 1 and FIG. 2, the electromagnetic wave shielding layer forming apparatus of the semiconductor package of the present embodiment includes the following: a first spray module 100, a first spray transfer unit 200, a second spray module 300, and a second spray transfer unit. 400 and material transfer unit 500.

The first spray module 100 applies a conductive liquid to the side surface of the semiconductor package C, and the second spray module 300 applies a conductive liquid to the upper surface of the semiconductor package C. The first spray module 100 is transferred forward, backward, left and right by the first spray transfer unit 200, and is lifted up and down. The second spray module 300 is transferred forward, backward, left, and right by the second spray transfer unit 400.

The material transfer unit 500 transfers the plurality of semiconductor packages C resting on the tray T on the lower side of the first spray module 100 and the second spray module 300.

The first spray module 100 includes a first nozzle 101 , an inclined nozzle 104 , and a first spray supply unit 102 . The first nozzle 101 is disposed to face the lower side so that the conductive liquid can be ejected. The inclined nozzle 104 is disposed in a direction inclined with respect to the vertical direction. The gas is ejected from the inclined nozzle 104 to change the ejection direction of the electroconductive liquid ejected by the first nozzle 101. The direction of the conductive liquid ejected by the first nozzle 101 can be inclined in the lateral direction by the inclined nozzle 104, thereby ejecting the conductive liquid to the side surface of the semiconductor package C. The first spray module 100 of the present embodiment is provided with four inclined nozzles 104. The four inclined nozzles 104 are disposed in the front, rear, left, and right directions, respectively. The direction of the conductive liquid ejected by the first nozzle 101 can be adjusted to face the front, rear, left, and right sides of the semiconductor package C by the first spray module 100 of the present embodiment with the four inclined nozzles 104 as described above. For convenience of explanation, four inclined nozzles 104 arranged in the same direction as each other are illustrated in FIGS. 3 and 4.

The four inclined nozzles 104 are respectively connected to the gas pump 150 to receive compressed gas. A tilt valve 134 is provided between the tilt nozzle 104 and the gas pump 150, respectively. The supply of the compressed gas to each of the inclined nozzles 104 is adjusted by opening and closing the tilt valve 134.

Referring to FIGS. 1 and 2 , the first spray transfer unit 200 includes a first spray lift unit 201 . The first spray lifting unit 201 raises and lowers the first nozzle 101 and the inclined nozzle 104 at the same time.

The first spray supply unit 102 is configured to supply a conductive liquid to the first nozzle 101 in a spray form. The first spray supply unit 102 can be formed in any configuration as long as it can supply the conductive liquid in a spray form.

In the present embodiment, a case where the first spray supply unit 102 having the structure shown in Fig. 3 is used will be exemplified.

Referring to Fig. 3, first spray supply unit 102 includes storage unit 110, aerosol generating unit 121, chamber 130, supply tube 133, and supply pump 131.

The storage portion 110 stores a conductive liquid to be applied to the material. The conductive liquid used in this embodiment was a silver paste (Silver Paste).

The aerosol generating unit 121 converts the conductive liquid received from the storage unit 110 into an aerosol in a fine particle state. In the case of the present embodiment, as shown in FIG. 3, the aerosol generating unit 121 is disposed inside the storage portion 110. In the present embodiment, the aerosol generating unit 121 provided with the ultrasonic vibration plate is used. The ultrasonic vibration is applied to the liquid inside the reservoir 110 by the ultrasonic vibration plate to atomize the conductive liquid, thereby generating an aerosol in a state of particles of a size of about several μm or less.

The mist generated by the aerosol generating unit 121 is transferred to the chamber 130 connected to the storage unit 110. The aerosol transferred from the reservoir 110 to the chamber 130 is stored in the chamber 130. The reservoir 110 is connected to the chamber 130 by a transfer tube 113. The transfer valve 112 is provided in the transfer pipe 113 to open and close the transfer pipe 113 or to adjust the flow rate. The transfer pump 111 is provided in the storage unit 110 to adjust the pressure of the storage unit 110, thereby transferring the aerosol to the chamber 130.

The operation of the aerosol generating unit 121, the transfer pump 111, and the transfer valve 112 are separately adjusted by the control unit provided.

A supply pipe 133 is connected to the chamber 130, and a first nozzle 101 is connected to the supply pipe 133. That is, the supply pipe 133 connects the chamber 130 to the first nozzle 101. The mist stored in the chamber 130 is transferred to the first nozzle 101 by the supply pipe 133 to be ejected. When the direction of the mist sprayed by the first nozzle 101 is inclined (changed) by the compressed gas injected from the tilt nozzle 104, the conductive liquid can be applied to the side surface of the semiconductor package C.

The supply pump 131 is provided in the chamber 130 to adjust the pressure of the chamber 130. The supply pipe 132 is provided in the supply pipe 133 to open and close the supply pipe 133. The supply pipe 133 operates the supply pump 131 and the supply valve 132. The control unit can adjust the amount of the mist sprayed by the first nozzle 101 by applying pressure to the chamber 130 by the supply pump 131 and adjusting the operation of the supply valve 132.

A circulation pipe 140 is disposed between the chamber 130 and the storage portion 110. The aerosol stored in the chamber 130 can be delivered to the aerosol generating unit 121 by the circulation pipe 140. A circulation valve 141 is provided in the circulation pipe 140. The operation of the circulation valve 141 is adjusted by the control unit. The mist stored in the chamber 130 can be circulated by the pressure of the chamber 130 increased by the supply pump 131 and the opening and closing operation of the circulation valve 141 and the supply valve 132 by the circulation pipe 140 to the storage portion 110. The mist which is not sprayed by the first nozzle 101 in the mist generated by the mist generating unit 121 and transmitted to the chamber 130 is transferred to the storage portion 110 through the circulation pipe 140, and is reused.

The first nozzle 101 of the first spray module 100 having the above-described configuration is transferred by the first spray transfer unit 200. The first spray module 100 simultaneously moves the first nozzle 101 and the four inclined nozzles 104 forward and backward, and the first nozzle 101 and the four inclined nozzles 104 are lifted and lowered by the first spray lifting portion 201.

Referring to Fig. 1, second spray module 300 includes second nozzle 301 and second spray supply unit 302.

The second nozzle 301 is formed toward the upper surface of the semiconductor package C so that the conductive liquid can be ejected onto the upper surface of the semiconductor package C. The second spray supply unit 302 supplies the conductive liquid to the second nozzle 301 in a spray form. The second spray supply unit 302 may be configured as described above for the first spray supply unit 102, or may be formed by a general spray spray device configuration.

The second spray transfer unit 400 transfers the second nozzle 301 of the second spray module 300 for the semiconductor package C. In order to apply the conductive liquid to the upper surfaces of the plurality of semiconductor packages C arranged on the tray T, the second spray transfer unit 400 moves the second spray module 300 forward and backward, left and right. The second spray transfer unit 400 may be configured to lift and lower the second nozzle 301 as needed.

As shown in FIGS. 1 and 2, the material transfer unit 500 transfers the semiconductor package C arranged at a fixed interval to the tray T for the first spray module 100 and the second spray module 300. In the case of the present embodiment, the material transfer unit 500 first performs the operation by disposing the semiconductor package C on the lower side of the first spray module 100, and then transfers the semiconductor package C to the lower side of the second spray module 300.

Hereinafter, an implementation process of the electromagnetic wave shielding layer forming method of the semiconductor package of the present invention will be described using the electromagnetic wave shielding layer forming apparatus of the semiconductor package configured as described above.

First, a step of ejecting a conductive liquid onto the side surface of the semiconductor package C by the first spray module 100 is performed as in the step (a).

Specifically, the (a) step is performed through the following procedure.

The first nozzle 101 and the tilt nozzle 104 are lowered by the first spray transfer unit 200 to be close to the side surface of the semiconductor package C. As in (a-1) step.

In the above state, the first spray supply unit 102 is actuated to spray the conductive liquid by the first nozzle 101, and the gas is ejected by the inclined nozzle 104 to change the ejection direction of the conductive liquid toward the side surface of the semiconductor package C. . As in (a-2) step. By ejecting the gas by the inclined nozzle 104 by opening one of the tilt valves 134, the spray direction of the first nozzle 101 is changed to the side direction of the semiconductor package C.

While the conductive liquid is sprayed by the first nozzle 101, the first spray transfer unit 200 is actuated to transfer the first nozzle 101 and the tilt nozzle 104 along the side surface of the semiconductor package C as in the step (a-3). Referring to FIGS. 1 and 3, the first spray transfer unit 200 transfers the first nozzles 101 in the Y direction, and coats the left side faces of the semiconductor packages C arranged in the same row by a conductive liquid. When the application of the left side surface of the semiconductor package C in one row is completed, the first nozzles 101 are transferred at a pitch in the X direction, and the conductive liquid is sprayed onto the left side surface of the semiconductor package C in the next row.

Next, the tilt valve 134 of the tilt nozzle 104 disposed in the Y direction is opened, and the above steps (a-1) to (a-3) are repeated. The coating operation for the conductive liquid disposed on the front surface of the semiconductor package C disposed on the tray T is completed by the method described above. The coating operation of the conductive liquid can be performed on the rear surface and the right side surface of the semiconductor package C by the same method.

When the work of applying the conductive liquid to each side surface of all the semiconductor packages C disposed on the tray T is completed, the first spray transfer unit 200 is actuated to raise the inclined nozzle 101 with respect to the side surface of the semiconductor package C, such as (a-4) Step.

Through the process as described above, the step (a) of applying the liquid for conductivity to the side surface of the semiconductor wafer is completely completed.

As described above, when the step (a) is completed, the material transfer unit 500 is actuated to transfer the plurality of semiconductor packages C resting on the tray T from the lower side of the first spray module 100 to the second spray module 300. The lower side, as in step (c).

As described above, if the plurality of semiconductor packages C resting on the tray T are disposed on the lower side of the second spray module 300, the conductive liquid is sprayed onto the upper surface of the semiconductor package C by the second spray module 300. , as in step (b). The second spray module 300 is moved forward and backward by the second spray transfer unit 400, and the second spray module 300 is actuated to apply the conductive liquid to the upper surface of all the semiconductor packages C disposed on the tray T. . The second nozzle 301 may be lowered by the second spray transfer unit 400 as needed, thereby performing the application of the conductive liquid to the semiconductor package C in a state where the second nozzle 301 is close to the upper surface of the semiconductor package C. Work on the upper surface. In this case, when the coating operation is completed, the second spray transfer unit 400 is used again to raise the second nozzle 301.

As described above, the coating operation for the "side surface" of the semiconductor package C and the coating operation for the "upper surface" are separately performed, thereby enabling application to the semiconductor package. The advantage of the uniform thickness of the conductive liquid on the side of C. In particular, if the inclined nozzle 104 formed to be inclined toward the side surface of the semiconductor package C is used, the configuration of the entire apparatus is relatively simple, and the electromagnetic wave shielding layer forming apparatus of the semiconductor package can be manufactured at a low cost. Moreover, there is an advantage that a high-quality electromagnetic wave shielding layer can be formed on the outer surface (especially the side surface) of the semiconductor package C. Moreover, since the first nozzle 101 and the inclined nozzle 104 having the above-described configuration are used, it is possible to uniformly and densely apply the conductive liquid even to the side surface of the semiconductor package C having a very thin thickness.

In particular, unlike the conventional method of coating a liquid, in the case of the present invention, since the spray ejection method is separately performed by the side surface and the upper surface of the semiconductor package C, it is possible to prevent the occurrence of application to the semiconductor package C. The surface tension of the liquid causes an advantage of the problem that the thickness of the liquid to be coated is not uniform. In particular, since many of the conductive liquids sprayed by the spray utilize fine particles, the coating amount of the conductive liquid can be adjusted very precisely unlike the prior method, and the influence due to the surface tension of the liquid can be minimized.

Through the above-described process, the semiconductor package C coated with the conductive liquid on the upper surface and the side surface is transferred to the oven, and the conductive liquid applied to the semiconductor package C is hardened by the heat of the oven.

Hereinafter, the process of performing the step (a-2) of ejecting the conductive liquid onto the side surface of the semiconductor wafer by the first spray module 100 having the structure described with reference to FIG. 3 described above will be more specifically described.

First, a conductive liquid to be sprayed in the form of a mist is stored in the storage portion 110 as in the step (a-2-1). As described above, the silver glue liquid can be stored in the storage portion 110.

Next, the aerosol generating unit 121 converts the conductive liquid stored in the storage unit 110 into an aerosol in a fine particle state as in the step (a-2-2). In the present embodiment, as described above, the aerosol is generated by applying vibration to the conductive liquid by the ultrasonic vibration plate provided in the storage portion 110. Various types of aerosols can be produced by a method of adjusting the vibration frequency of the vibrating plate according to the type of the conductive liquid. According to the method of generating the mist, the particle size of the mist can be less than several μm, so that the coating capacity of the conductive liquid can be finely adjusted, and the conductive liquid can be applied in the form of an extremely fine line.

The aerosol generated by the aerosol generating unit 121 is delivered to the chamber 130 as in the step (a-2-3). The aerosol stored in the chamber 130 is ejected by the first nozzle 101, as in the step (a-2-4). A part of the mist stored in the chamber 130 is transferred to the aerosol generating unit 121 of the storage portion 110 by the circulation pipe 140 to perform circulation, as in the step (a-2-5).

The control unit operates the aerosol generating unit 121, the supply pump 131, the supply valve 132, and the circulation valve 141 to adjust the amount of the aerosol sprayed by the first nozzle 101 and the mist delivered to the storage unit 110 by the circulation pipe 140. The amount. It is also possible to allow outside air to flow into the chamber 130 by the supply pump 131, thereby adjusting the concentration of the mist to be sprayed by the first nozzle 101.

Although the electromagnetic wave shielding layer forming apparatus and method of the semiconductor package of the present invention have been described above by way of preferred examples, the scope of the present invention is not limited to the above-described and illustrated embodiments.

For example, in the above description, the electromagnetic wave shielding layer forming apparatus of the semiconductor package including the circulation pipe 140 is exemplified, but the configuration of the embodiment in which the circulation pipe 140 is not provided may be used as the case may be. In the case of the non-circulating tube 140, the aerosol inside the chamber is used without being circulated or discharged to the outside. In this case, the electromagnetic wave shielding layer forming method of the semiconductor package does not perform the step (a-2-5) of circulating the aerosol of the chamber.

Further, in the above description, the following description has been made: first, the step (a) of applying the conductive liquid to the side surface of the semiconductor package C is performed, and in the step (c), the semiconductor package C is transferred to the second spray. After the lower side of the module 300, the step (b) of applying the conductive liquid to the upper surface of the semiconductor package C is performed, but the electromagnetic wave shielding layer forming method of the semiconductor package may be implemented in the reverse order. That is, the conductive liquid may be first applied to the upper surface of the semiconductor package C, and then the step of applying the conductive liquid to the side surface of the semiconductor package C is performed.

Further, in the above description, the first spray supply unit 102 includes the transfer pump 111, the supply pump 131, the transfer valve 112, the supply valve 132, and the circulation valve 141. However, it may be provided with only the above-described components as the case may be. For a part of the configuration, it is also possible to add a valve and a pump having an extra structure. For example, in the case where the pump 111 is not transferred, the aerosol can be naturally transferred to the chamber by the pressure of the aerosol generated in the reservoir.

Moreover, the aerosol generating unit 121 in the first spray supply unit 102 of the electromagnetic wave shielding layer forming apparatus of the semiconductor package described with reference to FIG. 3 is provided in the storage unit 10, but the aerosol generating unit may be set as the case may be. Between the reservoir and the chamber. In other words, the conductive liquid stored in the storage portion can be transferred to the aerosol generating unit to generate a mist, and the aerosol can be delivered to the chamber. The configuration of the first spray supply unit 102 does not need to be in the form of an aerosol, and any other configuration can be used as long as it can generate a conductive liquid in a spray state.

For example, it may be a configuration of the first spray supply unit 103 having the structure shown in FIG. The remaining configuration of the first spray supply unit 103 of the embodiment shown in Fig. 4 other than the configuration of the defogging agent generating unit 160 is the same as that of the embodiment described with reference to Fig. 3 . For the sake of convenience of explanation, the same components as those of the defogging agent generating unit 160 are given the same reference numerals as those of FIG. 3.

The first spray supply unit 103 shown in FIG. 4 includes an aerosol generating unit 160 in a normal spray form. The aerosol generating unit 160 includes a spray pipe 163 and a spray nozzle 162. The spray tube 163 is provided in the storage unit 110 and supplies the conductive liquid stored in the storage unit 110. The spray nozzle 162 is connected to the spray tube 163. The spray nozzle 162 is connected to the spray pump 161 to supply air pressure. When high-pressure air generated by the spray pump 161 is supplied, the conductive liquid supplied from the spray pipe 163 is mixed with air to spray the liquid in the form of a spray. The operation of the spray pump 161 is adjusted by the control unit.

In the case of using the first spray supply portion 103 of the structure shown in FIG. 4, the electromagnetic wave shielding layer forming method of the semiconductor package of another embodiment of the present invention uses the spray tube 163 without using the vibration plate as described above. The supplied conductive liquid is mixed by compressed air by the spray nozzle 163, whereby the step (a-2-2) is performed by the mist generating unit 121 which generates the mist.

In the above, in the case of the electromagnetic wave shielding layer forming apparatus of the semiconductor package described with reference to FIGS. 1 and 2, the four inclined nozzles 104 arranged in different directions are described, but the inclined nozzles are described. The number may vary depending on the embodiment. In either case, the first spray module and the first spray transfer unit may be configured such that only one inclined nozzle is provided and the center axis of the inclined nozzle is rotated about the center axis. In this case, the step a can be performed by rotating the tilt nozzle in accordance with the side surface direction of the semiconductor package C to which the conductive liquid is to be applied.

In this case, in the method of forming the electromagnetic wave shielding layer of the semiconductor package of the embodiment as described above, the steps (a-1) to (a-4) and (a-2-1) to (a-) 2-5) The steps can be changed by various other methods.

100‧‧‧First spray module
101‧‧‧First nozzle
102, 103‧‧‧First Spray Supply Department
104‧‧‧ tilt nozzle
110‧‧‧ Storage Department
111‧‧‧Transfer pump
112‧‧‧Transfer valve
113‧‧‧Transmission tube
121, 160‧‧‧ aerosol generating unit
130‧‧‧室
131‧‧‧Supply pump
132‧‧‧Supply valve
133‧‧‧Supply tube
134‧‧‧ tilt valve
140‧‧‧Circulation tube
141‧‧‧Circulation valve
150‧‧‧ gas pump
161‧‧‧ spray pump
162‧‧‧ spray nozzle
163‧‧‧ spray tube
200‧‧‧First spray transfer unit
201‧‧‧First spray lift
300‧‧‧Second spray module
301‧‧‧second nozzle
302‧‧‧Second Spray Supply Department
400‧‧‧Second spray transfer unit
500‧‧‧Material Transfer Unit
C‧‧‧Semiconductor package
T‧‧‧Tray

1 is a plan view showing an electromagnetic wave shielding layer forming apparatus of a semiconductor package according to an embodiment of the present invention. Fig. 2 is a front elevational view showing the electromagnetic wave shielding layer forming apparatus of the semiconductor package shown in Fig. 1. FIG. 3 is a schematic view for explaining a first spray supply unit of the electromagnetic wave shielding layer forming apparatus of the semiconductor package shown in FIG. 1. 4 is a schematic view for explaining another embodiment of the first spray supply unit of the electromagnetic wave shielding layer forming apparatus of the semiconductor package shown in FIG. 1 .

100‧‧‧First spray module

101‧‧‧First nozzle

102‧‧‧First Spray Supply Department

104‧‧‧ tilt nozzle

200‧‧‧First spray transfer unit

201‧‧‧First spray lift

300‧‧‧Second spray module

301‧‧‧second nozzle

302‧‧‧Second Spray Supply Department

400‧‧‧Second spray transfer unit

500‧‧‧Material Transfer Unit

C‧‧‧Semiconductor package

T‧‧‧Tray

Claims (10)

An electromagnetic wave shielding layer forming device for a semiconductor package is a semiconductor package electromagnetic wave shielding layer forming device for applying a conductive liquid to form an electromagnetic wave shielding layer on an outer surface of a semiconductor package, comprising: a first spray module, comprising: The nozzle is disposed in a lower direction so that the conductive liquid can be ejected, and the nozzle is inclined to change an ejection direction of the conductive liquid ejected by the first nozzle toward a side surface of the semiconductor package. And ejecting the gas in a direction inclined with respect to the vertical direction; the first spray supply unit supplies the conductive liquid to the first nozzle in a spray form; the first spray transfer unit transfers the liquid to the semiconductor package The first nozzle and the inclined nozzle of the first spray module; the second spray module includes: a second nozzle facing the chamber by spraying the conductive liquid onto the upper surface of the semiconductor package The upper surface of the semiconductor package is formed; the second spray supply portion supplies the second nozzle in a spray form a second liquid spray transfer unit that transfers the second nozzle of the second spray module with respect to the semiconductor package; and a material transfer unit that is opposite to the first spray module and the first The semiconductor module is transferred by the second spray module. The electromagnetic wave shielding layer forming apparatus semiconductor package according to claim 1, wherein the plurality of inclined nozzles of the first spray module are provided in different directions, and the plurality of inclined nozzles are arranged in different directions. The first spray transfer unit includes a first spray lifter that lifts and lowers the first nozzle and the plurality of inclined nozzles. The electromagnetic wave shielding layer forming device semiconductor package according to claim 1 or 2, wherein the first spray supply portion of the first spray module comprises: a storage portion for storing the conductive liquid; An aerosol generating unit that converts the conductive liquid received from the storage portion into an aerosol in a state of fine particles; a chamber that receives and stores the aerosol generated from the aerosol generating unit; a supply tube, The chamber is coupled to the first nozzle; a supply pump through which pressure is applied to the aerosol delivered from the chamber to the first nozzle. The electromagnetic wave shielding layer forming apparatus semiconductor package according to claim 3, wherein the aerosol generating unit of the first spray supply unit is provided with an ultrasonic vibration plate, and the ultrasonic vibration plate is stored in the The conductive liquid of the storage portion is vibrated to generate the aerosol. The electromagnetic wave shielding layer forming device semiconductor package according to claim 3, wherein the aerosol generating unit comprises: a spray tube, the conductive liquid supplied to the storage portion; and a spray nozzle to the spray Tube jet air pressure. The electromagnetic wave shielding layer forming device semiconductor package according to claim 3, wherein the first spray supply portion further comprises: a circulation pipe that transfers the aerosol stored in the chamber to the aerosol a generating unit; and a circulation valve that adjusts a flow rate of the circulation pipe. A method for forming an electromagnetic wave shielding layer for a semiconductor package is a method for forming an electromagnetic wave shielding layer of a semiconductor package coated with a conductive liquid for forming an electromagnetic wave shielding layer on an outer surface of a semiconductor package, comprising: (a) utilizing a direction along a lower side a first nozzle disposed, an inclined nozzle formed to inject a gas in a direction inclined with respect to a vertical direction, and a first spray mold in which a first spray supply portion of the conductive liquid is supplied to the first nozzle in a spray form a step of spraying the conductive liquid onto the side surface of the semiconductor package; (b) using a second nozzle formed to face the upper surface of the semiconductor package, and applying the spray to the second nozzle a step of supplying the conductive liquid to the upper surface of the semiconductor package by supplying a second spray module of the second spray supply portion of the conductive liquid; and (c) applying the semiconductor package from the first The step of transferring the lower side of one of the spray module and the second spray module to the lower side of the other. The method of forming an electromagnetic wave shielding layer forming method according to claim 7, wherein the step (a) comprises: (a-1) transferring a first spray by transferring the first nozzle and the inclined nozzle a step of lowering the first nozzle and the tilting nozzle to be close to a side surface of the semiconductor package; (a-2) actuating the first spray supply portion to spray with the first nozzle Spraying the conductive liquid, and ejecting the gas by the inclined nozzle to change the ejection direction of the conductive liquid to a direction toward a side surface of the semiconductor package; (a-3) transferring the first spray a step of moving the first nozzle and the tilting nozzle along a side of the semiconductor package; and (a-4) actuating the first spray transfer unit to cause the first nozzle and the The step of tilting the nozzle up relative to the side of the semiconductor package. The method of forming an electromagnetic wave shielding layer forming method according to claim 7 or claim 8, wherein the step (a) is performed first to cause the semiconductor package to be under the first spray module After performing the step (c) on the side moving toward the lower side of the second spray module, the step (b) is performed. The method of forming an electromagnetic wave shielding layer forming method according to claim 8, wherein the step (a-2) comprises: (a-2-1) storing the conductive liquid in a storage portion; (a- 2-2) converting the conductive liquid stored in the storage portion into an aerosol in a state of fine particles by using an aerosol generating unit; (a-2-3) will be described in (a-2-3) a step of transferring the aerosol generated in the step to the chamber; (a-2-4) a step of spraying the aerosol stored in the chamber with the first nozzle; and (a-2-5 The step of transferring the aerosol stored in the chamber to the aerosol generating unit to circulate it.