TW201741227A - MEMS device and manufacturing method thereof - Google Patents

Abstract

A microelectromechanical system (MEMS) device includes a first movable element and a second movable element, wherein the second movable element is connected with a movable membrane for sensing pressure to make the second movable element moves with the movable membrane to sense pressure variation of external environment, and other portion of the substrate forming the movable membrane can be formed a cap to protect the first movable element for sensing other physical quantities. Accordingly, the pressure sensor and the MEMS structure for sensing other physical quantities can be integrated in the foregoing MEMS device by a single process.

Description

Microelectromechanical system device and method of manufacturing same

The present invention relates to a microelectromechanical system device and a method of fabricating the same, and more particularly to a microelectromechanical system device for sensing a plurality of physical quantities and a method of fabricating the same.

Since the formation of the concept of MEMS devices in the 1970s, Microelectromechanical System (MEMS) devices have evolved from the exploration of the laboratory to become the object of high-order system integration, and have been widely used in mass consumer devices. Shows amazing and steady growth. The MEMS device includes a movable MEMS component that implements the functions of the MEMS device by sensing or controlling the amount of motion physics of the movable MEMS component.

In order to meet the requirements of light and thin electronic devices, it is a major development trend to integrate multiple MEMS systems that sense different physical quantities into a single MEMS device. However, the principle of sensing is different, and the structure of the MEMS system that senses different physical quantities is also very different. For example, an accelerometer requires a cover to protect the movable element to maintain the reliability of the element, while a pressure sensor needs to be in contact with the external environment to sense changes in the pressure of the environment. Therefore, it is difficult to integrate multiple MEMS structures sensing different physical quantities into the process of a single MEMS device.

In summary, how to integrate multiple MEMS structures sensing different physical quantities into a single MEMS device is currently an urgent goal.

The invention provides a MEMS device and a manufacturing method thereof, which are connected with a movable film that senses pressure by a movable element, so that the movable element can be interlocked with the movable film to sense the pressure change of the external environment. According to this structure, other regions of the substrate on which the movable film is formed can form a cover to protect the movable component that senses other physical quantities. Therefore, the MEMS device of the present invention and the method of manufacturing the same can integrate the pressure sensor by a single process And the MEMS structure sensing other physical quantities in a single MEMS device.

A MEMS device according to an embodiment of the invention includes a first substrate, a second substrate, and a third substrate. The first surface of one of the first substrates includes a first circuit, a second circuit, and a first conductive contact. The second substrate has a second surface, a third surface, and a second conductive contact disposed on the third surface, and the second substrate is disposed on the first surface of the first substrate with the second surface, and is coupled to the first conductive The contacts are electrically connected. The second substrate includes a first movable element and a second movable element. The first movable element is electrically connected to the first circuit. The second movable element corresponds to the second circuit and is electrically separated from the first movable element. The third substrate has a fourth surface and a fifth surface, and the third substrate is disposed on the third surface of the second substrate in a fourth surface and electrically connected to the second conductive contact. The third substrate is divided into a first cover body and a second cover body electrically separated from each other, wherein the first cover body is disposed corresponding to the first movable element and spatially separated from the first movable element; the second cover body and the second cover body The two movable elements are connected, and an airtight cavity is formed between the second cover and the first substrate.

A manufacturing method of a microelectromechanical system device according to another embodiment of the present invention includes: providing a third substrate having a fourth surface and a fifth surface, and defining a plurality of first connection regions on the fourth surface; providing a first a second substrate having a second surface and a third surface, and defining a plurality of second connection regions on the third surface; bonding the third substrate to the second substrate, wherein the plurality of first connection regions and the plurality of second a connection area correspondingly connected; defining a plurality of third connection areas on the second surface of the second substrate; dividing the second substrate into one of the first movable element and the second movable element electrically separated from each other, wherein the first movable element is The third substrate is spatially separated, and the second movable component is connected to the third substrate; a first substrate is provided, a first surface thereof includes a first circuit and a second circuit; and the first surface of the first substrate is defined a fourth connection region; the first substrate is bonded to the second substrate, wherein the plurality of fourth connection regions and the plurality of third connection regions are correspondingly connected, and the first circuit is electrically connected to the first movable component And the second circuit corresponds to the second movable element; thinning the third substrate; and dividing the third substrate into a first cover and a second cover, wherein the first cover corresponds to the first movable element, and An airtight cavity is formed between the second cover and the first substrate.

The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.

The embodiments of the present invention will be described in detail below with reference to the drawings. In addition to the detailed description, the present invention may be widely practiced in other embodiments, and any alternatives, modifications, and equivalent variations of the described embodiments are included in the scope of the present invention. quasi. In the description of the specification, numerous specific details are set forth in the description of the invention. In addition, well-known steps or elements are not described in detail to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is to be noted that the drawings are for illustrative purposes only and do not represent the actual dimensions or quantities of the components. Some of the details may not be fully drawn in order to facilitate the simplicity of the drawings.

The present invention integrates a pressure sensor and a microelectromechanical system structure (e.g., an accelerometer) that senses other physical quantities into a single MEMS device. Referring to FIG. 1 , a microelectromechanical system device according to an embodiment of the present invention includes a first substrate 10 , a second substrate 20 , and a third substrate 30 . The first substrate 10 includes a first circuit, a second circuit, and a first conductive contact 12. In an embodiment, the first substrate 10 includes at least one metal layer. In the embodiment shown in FIG. 1, the first substrate 10 includes two metal layers, and the uppermost metal layer is partially exposed on the first surface 11 of the first substrate 10. The exposed metal layer can serve as the first circuit, the second circuit, and the first conductive contact 12. Taking an accelerometer as an example, the sensing capacitor includes a fixed electrode and a movable electrode, and the first circuit is a corresponding circuit structure, as shown by symbols 111a, 111b, and 111c in FIG. Similarly, the second circuit can be a fixed electrode of the pressure sensor and a corresponding circuit structure of the movable electrode, as shown by symbols 111d and 111e in FIG. The first conductive contact 12 is a connection position between the first substrate 10 and the second substrate 20 to electrically connect the first substrate 10 and the second substrate 20. It can be understood that the first conductive contact 12 may overlap with the first circuit and the second circuit to electrically connect the second substrate 20 with the first circuit or the second circuit, as shown by symbols 111a, 111c, and 111e in FIG. Show. In an embodiment, the first substrate 10 can be a complementary MOS substrate.

The second substrate 20 has a second surface 21 , a third surface 22 , and a second conductive contact 23 disposed on the third surface 22 . In one embodiment, a dielectric layer 24 can be disposed between the third surface 22 of the second substrate 20 and the second conductive contact 23. For example, dielectric layer 24 can be an oxide, a nitride, or an oxynitride. Whether the second conductive contact 23 is electrically connected or electrically separated from the second substrate 20 can be controlled by whether or not the conductive via hole is formed through the dielectric layer 24. For example, the second conductive contact 23a is electrically separated from the second substrate 20. The second substrate 20 is disposed on the first surface 11 of the first substrate 10 toward the first substrate 10 with the second surface 21 . In addition, the second substrate 20 is electrically connected to the first circuit and the second circuit via the first conductive contact 12 . In one embodiment, the second substrate 20 can be bonded to the first substrate 10 by a eutectic bonding technique. Therefore, the first conductive contact 12 may comprise two materials, as shown by symbols 121 and 122 in FIG. Shown. For example, the first conductive contact 12 includes an alloy comprising at least one of aluminum, copper, bismuth, indium, gold, and antimony. However, the second substrate 20 can also be bonded to the first substrate 10 by a technique of at least one of fusion bonding, soldering, and bonding, and electrically connected to each other. The second substrate 20 includes one of the first movable element 25a and the second movable element 25b electrically separated from each other. The first movable element 25a is electrically connected to the first circuit via the first conductive contact 12. Taking the accelerometer as an example, the first movable element 25a can sense the physical quantity of the acceleration. The second movable element 25b corresponds to the second circuit 11d.

The third substrate 30 has a fourth surface 31 and a fifth surface 32. The third substrate 30 is disposed on the third surface 22 of the second substrate 20 with the fourth surface 31 facing the second substrate 20 and electrically connected to the second conductive contact 23 . Similarly, the third substrate 30 can be bonded to the second substrate 20 by a eutectic bonding technique. Therefore, the second conductive contact 23 may comprise two materials, as shown by reference numerals 231 and 232 of FIG. For example, the second conductive contact 23 comprises an alloy comprising at least one of aluminum, copper, bismuth, indium, gold, and antimony. However, the third substrate 30 can also be bonded to the second substrate 20 by a technique of welding, soldering, and bonding at least one of them, and electrically connected to each other.

The third substrate 30 is divided into a first cover 33a and a second cover 33b which are electrically separated from each other. The first cover 33a is disposed corresponding to the first movable element 25a such that the first movable element 25a is disposed between the first substrate 10 and the first cover 33a. In other words, the first movable element 25a can be covered by the first cover 33a to be protected. It can be understood that the first cover 33a is spatially separated from the first movable element 25a to prevent the first cover 33a from affecting the movement of the first movable element 25a. In one embodiment, the first cover 33a has a second recess 342 with respect to the fourth surface 31 of the first movable element 25a to increase the distance between the first movable element 25a and the first cover 33a.

The second cover 33b is connected to the second movable member 25b so that the second movable member 25b can move in accordance with the deformation of the second cover 33b. In addition, an airtight cavity is formed between the second cover 33b and the first substrate 10, in other words, the second movable element 25b is disposed in the airtight cavity. According to this structure, the second cover 33b can be deformed correspondingly according to the pressure change of the external environment, thereby driving the second movable element 25b to move up and down. Therefore, the second movable element 25b can be regarded as a movable electrode, and is opposite to The fixed electrode (second circuit 111d) forms a sensing capacitance to sense the pressure change of the external environment. For example, the second movable element 25b can be electrically connected to the second cover 33b via the second conductive contact 23, and the second cover 33b is further connected to the two sides of the second movable contact 23 and the second movable element 25b. The two substrates 20 and the first conductive contacts 12 are electrically connected to the second circuit 111e. In an embodiment, the second substrate 20 and the third substrate 30 may be single crystal germanium.

In one embodiment, the second cover 33b has a first recess 341 disposed on the fifth surface 32 of the second cover 33b (ie, the third substrate 30) to thin the portion of the second cover 33b. Preferably, the connection area of the second cover 33b and the second movable element 25b is smaller than the bottom area of the first recess 341 to prevent the excessive connection area from affecting the shape variable of the second cover 33b. According to this configuration, the second cover 33b is more sensitive to the pressure change of the external environment, and has a large deformation amount, thereby facilitating pressure sensing.

In an embodiment, the second surface 21 of at least one of the first movable element 25a and the second movable element 25b can be provided with a stopping protrusion 26a, 26b, so that the first movable element 25a and the second movable element can be lowered. The contact area of 25b with the first substrate 10 prevents the first movable element 25a and the second movable element 25b from sticking to the first substrate 10 and fail. Similarly, in an embodiment, the bottom of the second recess 342 of the first cover 33a may also be provided with a stop protrusion 34 to reduce the contact area between the first movable element 25a and the first cover 33a. The first movable member 25a is prevented from sticking to the first cover 33a and fails.

Please refer to FIG. 2 to illustrate a microelectromechanical system device according to another embodiment of the present invention. Compared with the embodiment shown in FIG. 1 , the main difference is that in the MEMS device shown in FIG. 2 , the first substrate 10 further includes a reference circuit 111 f , and the second substrate 20 further includes a reference component 27 . It is electrically separated from the second cover 33b. For example, the second conductive contact 23b is isolated from the second substrate 20 by the dielectric layer 24, and therefore, the reference component 27 is not electrically connected to the second cover 33b via the second conductive contact 23b. . The reference element 27 corresponds to the reference circuit 111f to form a reference capacitor. The reference element 27 does not change with the pressure of the external environment, and therefore, the reference capacitance is a certain value. The difference between the sensing capacitance and the reference capacitance sensed by the second movable element 25b is the amount of change of the external environmental pressure, and a more accurate sensing result is obtained.

Compared with the conventional pressure sensor, the present invention utilizes the second movable element 25b to be coupled to the movable film of the second cover 33b, so that the second movable element 25b can follow the external pressure of the movable film of the second cover 33b. Change and move. It can be understood that the first cover 33a and the second cover 33b are all formed by the third substrate 30, and the height difference between the movable film of the second cover 33b and the fixed electrode (ie, the second circuit 111d) can be The second movable element 25b is filled, that is, the second movable element 25b is an extension of the movable film of the second cover 33b, and can form a sensing capacitance with the fixed electrode to sense the pressure change of the external environment. According to this configuration, the pressure sensor can be integrated into a single MEMS device with a MEMS structure that senses other physical quantities. For example, the first movable element 25a and the first circuit may form a microelectromechanical system structure such as an accelerometer, a gyroscope, a hygrometer or a magnetometer.

Please refer to FIG. 3a to FIG. 3l to illustrate a method of fabricating the MEMS device of the embodiment shown in FIG. 2. Although only a single device is shown in the schematic diagrams shown in Figures 3a through 3l, it will be understood that multiple dies can be fabricated on a single substrate. Therefore, the single devices shown in the figures are merely representative and are not intended to limit the method of manufacture of the invention in a single device. A more complete description will be made in this specification to fabricate a plurality of dies or devices on a substrate in a wafer level process. After the device is fabricated, a separate device package is created using dicing and singulation techniques for use in a variety of applications.

First, a third substrate 30 having a fourth surface 31 and a fifth surface 32 is provided. Next, a plurality of first connection regions 232 are defined on the fourth surface 31 of the third substrate 30, as shown in FIG. 3a. In one embodiment, the third substrate 30 may be a single crystal germanium; the material of the first connection region 232 may be germanium, but is not limited thereto. For example, the material of the first connection region 232 can be deposited on the fourth surface 31 of the third substrate 30 by electroplating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) procedures. Figure 3a shows the third substrate 30 and the patterned first connection region 232 after the etching process. In order to clearly illustrate the technical features of the present invention, FIG. 3a does not show a lithography procedure, which is briefly described as follows. A photoresist layer is deposited on the layered first connection region 232 and the photoresist layer is patterned to form an etch mask. In the lithography process, the size of the etch mask can be tightly controlled and can be formed of any suitable material that resists the etching process used to etch the layered first connection regions 232. Although a one-dimensional cross-sectional view is shown in Figure 3a, one of ordinary skill in the art will recognize that the first connection region 232 is formed as a two-dimensional pattern having a specified geometry.

Referring to FIG. 3b, a plurality of second recesses 342 and a dividing groove 343 are formed on the fourth surface 31 of the third substrate 30. As described above, the second groove 342 corresponds to the first movable member 25a to increase the distance between the third substrate 30 and the first movable member 25a. It can be understood that this step can be omitted in the case where there is a sufficient distance between the third substrate 30 and the first movable element 25a. The dividing groove 343 divides the third substrate 30 in a subsequent process to form a first cover 33a and a second cover 33b. Similarly, other suitable means may be substituted for the dividing groove 343 to divide the third substrate 30, and therefore, the steps shown in FIG. 3b may be omitted.

Next, a second substrate 20 having a second surface 21 and a third surface 22 is provided, and a plurality of second connection regions 231, 231a, 231b are defined on the third surface 22 of the second substrate 20, as shown in FIG. 3c. Shown. In one embodiment, the second substrate 20 may be a single crystal germanium; the material of the second connection region 231 may be aluminum, but is not limited thereto. Similarly, the second connection region 231 can form a two-dimensional pattern having a specified geometric shape by processes such as deposition, lithography, etching, and the like. It can be understood that, as described above, a dielectric layer 24 can be used to determine whether the second connection region 231 is electrically connected to the second substrate 20. For example, in the embodiment shown in FIG. 3c, the second connection regions 231a, 231b are not electrically connected to the second substrate 20.

Referring to FIG. 3d, the first connection region 232 of the third substrate 30 is corresponding to the second connection regions 231, 231a, and 231b of the second substrate 20 to bond the third substrate 30 and the second substrate 20. The first connection region 232 and the second connection region 231 after bonding can serve as the second conductive contact 23 between the third substrate 30 and the second substrate 20. In one embodiment, the bonding of the third substrate 30 to the second substrate 20 is achieved by a eutectic bonding technique. For example, the temperature at which the third substrate 30 and the second substrate 20 are joined is less than or equal to 450 degrees Celsius. However, it is not limited thereto, and other suitable techniques may also bond the third substrate 30 and the second substrate 20, such as welding, soldering or bonding. In one embodiment, after the bonding of the third substrate 30 and the second substrate 20 is completed, the second substrate 20 can be further thinned to a suitable thickness. For example, the thinned second substrate 20 may have a thickness of 30 μm.

Referring to FIG. 3e, a plurality of third connection regions 122 are defined on the second surface 21 of the second substrate 20. In an embodiment, the material of the third connection region 122 may be gold. As described above, the third connection region 122 can form a two-dimensional pattern having a specified geometry by processes such as deposition, lithography, etching, and the like.

Referring to FIG. 3f, a plurality of pillars 261 are formed on the second surface 21 of the second substrate 20, which correspond to the third connection regions 122. For example, the second surface 21 of the second substrate 20 can be etched by patterning to form a relatively tall pillar 261. In one embodiment, mechanical stop structures of one or more movable elements, such as stop lugs 26a, 26b, may also be defined in this step. It can be understood that if the first substrate 10 is subsequently connected to the first substrate 10 and the first substrate 10 has a sufficient distance between the first movable element 25a and the second movable element 25b, the steps shown in FIG. 3f can also be omitted.

Referring to FIG. 3g, the second substrate 20 is further divided into a first movable element 25a and a second movable element 25b electrically separated from each other by a process such as lithography and etching, wherein the first movable element 25a and the third substrate 30 are formed. Separated in space to sense physical quantities such as acceleration. The second movable element 25b is connected to the third substrate 30. After the subsequent process is completed, the second movable element 25b can be interlocked with the second cover. In an embodiment, this step can also define the reference component 27 at the same time. It should be noted that the reference component 27 is only fixed to the third substrate 30 by the second conductive contact 23b, but since the second conductive contact 23b is not electrically connected to the reference component 27 due to the isolation of the dielectric layer 24, The reference element 27 is electrically separated from the third substrate 30.

Referring to FIG. 3h, a first substrate 10 is provided, which includes a driving circuit and/or a sensing circuit and the like. Analog and/or digital circuits can be used in the first substrate 10, which are typically implemented in components designed for special application integrated circuits (ASICs). The first substrate 10 may also be referred to as an electrode substrate. In an embodiment of the invention, the first substrate 10 can be any substrate having suitable mechanical rigidity, including a complementary metal oxide semiconductor (CMOS) substrate, a glass substrate, and the like. The first surface 11 of the first substrate 10 includes a first circuit 111a, 111b, 111c and a second circuit 111d, 111e, 111f. The detailed process of the first substrate 10 is well known to those of ordinary skill in the art to which the present invention pertains, and will not be described herein. Next, a plurality of fourth connection regions 121 are defined on the first surface 11 of the first substrate 10, as shown in FIG. 3i. In an embodiment, the material of the fourth connection region 121 may be indium, but is not limited thereto. Similarly, the fourth connection region 121 can form a two-dimensional pattern having a specified geometric shape by processes such as deposition, lithography, etching, and the like.

Referring to FIG. 3j, the third connection region 122 of the second substrate 20 corresponds to the fourth connection region 121 of the first substrate 10 to bond the second substrate 20 and the first substrate 10, wherein the second movable element 25b and the The two circuits 111d correspond to each other. The third connection region 122 and the fourth connection region 121 after bonding can serve as the first conductive contact 12 between the second substrate 20 and the first substrate 10. For example, the first movable element 25a can be electrically connected to the first circuits 111a, 111c of the first substrate 10 via the first conductive contacts 12. In one embodiment, the bonding of the second substrate 20 to the first substrate 10 is achieved by a eutectic bonding technique. It can be understood that, in order to avoid deterioration of the bonding strength between the third substrate 30 and the second substrate 20, the temperature at which the second substrate 20 is bonded to the first substrate 10 is lower than the temperature at which the third substrate 30 and the second substrate 20 are bonded. For example, the temperature at which the second substrate 20 is bonded to the first substrate 10 is about 150 degrees. It should be noted that other suitable techniques may also bond the second substrate 20 and the first substrate 10, such as welding, soldering or bonding.

Referring to FIG. 3k, the third substrate 30 is thinned by a grinding and/or other thinning procedure to achieve a specified thickness. Then, the third substrate 30 is divided into a first cover 33a and a second cover 33b, as shown in FIG. 31, wherein the first cover 33a corresponds to the first movable element 25a; the second cover 33b and the first An airtight cavity is formed between the substrates 10 to sense pressure changes in the external environment. For example, the third substrate 30 can be divided by etching the fifth surface 32 of the third substrate 30 to communicate the dividing grooves 343. In an embodiment, a first recess 341 is formed on the fifth surface 32 of the second cover 33b when the third substrate 30 is divided to further thin the second cover 33b corresponding to the second movable element 25b. region. In an embodiment, after further thinning, the remaining thickness of the second cover 33b corresponding to the region of the second movable element 25b (ie, the bottom of the first recess 341) is approximately 10 μm to 100 μm to follow the external environment. The pressure changes to cause deformation. Preferably, the connection area of the second cover 33b and the second movable element 25b is smaller than the bottom area of the first recess 341 to prevent the excessive connection area from affecting the shape variable of the second cover 33b.

In summary, the MEMS device of the present invention is connected to a movable film that senses pressure by a movable element, so that the movable element can be interlocked with the movable film to sense the pressure change of the external environment. According to this configuration, other regions of the substrate on which the movable film is formed may form a cover to protect the movable member that senses other physical quantities. Therefore, the MEMS device of the present invention can use a single process to apply the pressure sensor and sense other physical quantities. The MEMS structure is fabricated on the same substrate, that is, integrated into a single MEMS device.

The embodiments described above are only intended to illustrate the technical idea and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.

10‧‧‧First substrate
11‧‧‧ first surface
111a, 111b, 111c‧‧‧ first circuit
111d, 111e, 111f‧‧‧ second circuit
12‧‧‧First conductive contacts
121‧‧‧fourth connection area
122‧‧‧ third connection area
20‧‧‧second substrate
21‧‧‧ second surface
22‧‧‧ third surface
23, 23a, 23b‧‧‧‧‧‧Second conductive contacts
231, 231a, 231b‧‧‧ second connection area
232‧‧‧First connection area
24‧‧‧ dielectric layer
25a‧‧‧First movable element
25b‧‧‧Second movable element
26a, 26b, 34‧‧‧‧‧‧ stop bumps
261‧‧‧Cylinder
27‧‧‧Reference components
30‧‧‧ Third substrate
31‧‧‧ fourth surface
32‧‧‧ fifth surface
33a‧‧‧first cover
33b‧‧‧Second cover
341‧‧‧First groove
342‧‧‧second groove
343‧‧‧ split slot

1 is a schematic view showing a microelectromechanical system device according to an embodiment of the present invention. 2 is a schematic view showing a microelectromechanical system device according to another embodiment of the present invention. 3a to 3l are schematic views showing a method of manufacturing a microelectromechanical system device according to an embodiment of the present invention.

10‧‧‧First substrate

11‧‧‧ first surface

111a, 111b, 111c‧‧‧ first circuit

111d, 111e‧‧‧ second circuit

12‧‧‧First conductive contacts

121‧‧‧fourth connection area

122‧‧‧ third connection area

20‧‧‧second substrate

21‧‧‧ second surface

22‧‧‧ third surface

23, 23a‧‧‧Second conductive contacts

231‧‧‧Second connection area

232‧‧‧First connection area

24‧‧‧ dielectric layer

25a‧‧‧First movable element

25b‧‧‧Second movable element

26a, 26b, 34‧‧‧ stop bumps

30‧‧‧ Third substrate

31‧‧‧ fourth surface

32‧‧‧ fifth surface

33a‧‧‧first cover

33b‧‧‧Second cover

341‧‧‧First groove

342‧‧‧second groove

Claims (28)

A MEMS device includes: a first substrate, a first surface thereof comprising a first circuit, a second circuit, and a first conductive contact; a second substrate having a second surface, a first a third surface and a second conductive contact disposed on the third surface, wherein the second substrate is disposed on the first surface of the first substrate by the second surface, and is electrically connected to the first conductive contact And the second substrate comprises: a first movable component electrically connected to the first circuit; and a second movable component corresponding to the second circuit and electrically separated from the first movable component And a third substrate having a fourth surface and a fifth surface, wherein the third substrate is disposed on the third surface of the second substrate with the fourth surface, and is electrically connected to the second conductive contact a first substrate and a second cover electrically separated from each other, wherein the first cover is disposed corresponding to the first movable element and spatially spaced from the first movable element Separating; the second cover and the second Connecting member, and the second cover form an airtight cavity between the first substrate. The MEMS device of claim 1, wherein the first substrate further comprises a reference circuit, and the second substrate further comprises a reference component corresponding to the reference circuit and electrically separated from the second cover . The MEMS device of claim 1, wherein the second cover has a first recess disposed on the fifth surface to thin the portion of the second cover. The MEMS device of claim 2, wherein a connection area of the second cover and the second movable element is smaller than a bottom area of the first groove. The MEMS device of claim 1, wherein the first cover has a second recess disposed on the fourth surface and opposite to the first movable element. The MEMS device of claim 1, wherein a bottom of the second recess is provided with a stop bump. The MEMS device of claim 1, wherein the second surface of at least one of the first movable element and the second movable element has a stop bump. The MEMS device of claim 1, wherein the first substrate comprises a complementary MOS substrate. The MEMS device of claim 1, wherein the second substrate or the third substrate comprises a single crystal germanium. The MEMS device of claim 1, wherein the first conductive contact comprises an alloy comprising at least one of aluminum, copper, bismuth, indium, gold, and antimony. The MEMS device of claim 1, wherein the second conductive contact comprises an alloy comprising at least one of aluminum, copper, bismuth, indium, gold, and antimony. The MEMS device of claim 1, wherein the first movable element and the first circuit form an accelerometer, a gyroscope, a hygrometer or a magnetometer. A method of manufacturing a microelectromechanical system device, comprising: providing a third substrate having a fourth surface and a fifth surface, and defining a plurality of first connection regions on the fourth surface; providing a second substrate Having a second surface and a third surface, and defining a plurality of second connection regions on the third surface; bonding the third substrate to the second substrate, wherein the plurality of first connection regions and the plurality of a second connecting area corresponding to the connection; defining a plurality of third connecting areas on the second surface of the second substrate; dividing the second substrate into one of a first movable element and a second movable element electrically separated from each other, wherein The first movable component is spatially separated from the third substrate, and the second movable component is connected to the third substrate; a first substrate is provided, a first surface thereof includes a first circuit and a second circuit; The first surface of the first substrate defines a plurality of fourth connection regions; the first substrate is bonded to the second substrate, wherein the plurality of fourth connection regions and the plurality of third connection regions are connected The first circuit is electrically connected to the first movable element, and the second circuit corresponds to the second movable element; thinning the third substrate; and dividing the third substrate into a first cover and a first The second cover body, wherein the first cover body corresponds to the first movable element, and an airtight cavity is formed between the second cover body and the first substrate. The manufacturing method of the MEMS device of claim 13, wherein one of the plurality of second connection regions is electrically separated from the second substrate, and the step of forming the first movable element and the second movable element Further defining a reference component connected to the third substrate via the second connection region electrically separated from the second substrate and corresponding to a reference circuit of the first substrate. The method of manufacturing the MEMS device of claim 13, further comprising: forming a first recess in the fifth surface of the second cover to thin the portion of the second cover. The method of manufacturing a MEMS device according to claim 15, wherein a connection area of the second cover and the second movable element is smaller than a bottom area of the first groove. The method of fabricating a MEMS device according to claim 15, wherein the step of forming the first recess is integrated into the step of dividing the third substrate. The method of manufacturing the MEMS device of claim 13, further comprising: forming a plurality of second grooves and a dividing groove on the fourth surface of the third substrate, wherein the second groove corresponds to the first a movable element, and the dividing groove is located between the first cover and the second cover. The method of manufacturing the MEMS device of claim 13, further comprising: forming a plurality of pillars on the second surface of the second substrate, corresponding to the third connection region. The method of manufacturing the MEMS device of claim 19, wherein the step of forming the pillar further comprises forming a stop bump corresponding to at least one of the first movable element and the second movable element The second surface. The method of fabricating a microelectromechanical system device according to claim 13, wherein the first substrate comprises a complementary MOS semiconductor substrate. The method of fabricating a microelectromechanical system device according to claim 13, wherein the second substrate or the third substrate comprises a single crystal germanium. The method of fabricating a microelectromechanical system device according to claim 13, wherein the bonding of the third substrate and the second substrate is achieved by at least one of eutectic bonding, welding, soldering, and bonding. The method of fabricating a microelectromechanical system device according to claim 13, wherein the bonding of the first substrate and the second substrate is achieved by at least one of eutectic bonding, welding, soldering, and bonding. The method of manufacturing the MEMS device of claim 13, wherein the first connection region and the junction region of the second connection region comprise an alloy comprising at least aluminum, copper, bismuth, indium, gold, and bismuth. One. The method of manufacturing the MEMS device of claim 13, wherein the third connection region and the junction region of the fourth connection region comprise an alloy comprising at least aluminum, copper, bismuth, indium, gold, and bismuth One. The method of manufacturing the MEMS device of claim 13, wherein the temperature at which the first substrate and the second substrate are bonded is less than the temperature at which the third substrate is bonded to the second substrate. The method of fabricating a MEMS device according to claim 13, wherein the temperature at which the third substrate is bonded to the second substrate is less than or equal to 450 degrees Celsius.