TW201731123A - Patterned substrate for enhancing light output efficiency of LED - Google Patents
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本發明是有關於一種圖案化基板，特別是指一種表面具有複數呈不均勻規則排列之凸塊的圖案化基板。The present invention relates to a patterned substrate, and more particularly to a patterned substrate having a plurality of bumps having a plurality of unevenly arranged surfaces.
發光二極體(light emitting diode，簡稱為LED)為目前被廣泛使用的照明技術之一，而發光二極體的亮度及發光效率更是學術界及業界主要的發展重點，就發光二極體的磊晶技術而言，圖案化基板(patterned epitaxial substrate)是用以增進發光二極體之出光效率的常見技術手段，習知的圖案化基板，是在其表面形成複數半球狀或角錐狀的凸塊，且該等凸塊是呈均勻規則的分布排列，然而，此種圖案化基板僅能有限地增進發光二極體的出光效率。Light emitting diode (LED) is one of the widely used lighting technologies, and the brightness and luminous efficiency of LEDs are the main development focus of the academic community and the industry. In the case of epitaxial technology, a patterned epitaxial substrate is a common technical means for improving the light-emitting efficiency of a light-emitting diode. A conventional patterned substrate has a plurality of hemispherical or pyramidal shapes formed on the surface thereof. The bumps, and the bumps are arranged in a uniform regular distribution, however, such a patterned substrate can only improve the light-emitting efficiency of the light-emitting diodes to a limited extent.
因此，本發明之目的，即在提供一種具有複數呈不均勻規則分布排列的凸塊，針對尺寸縮小趨勢來說，能進一步增進發光二極體之出光效率的圖案化基板。Accordingly, it is an object of the present invention to provide a patterned substrate having a plurality of bumps arranged in a non-uniform regular distribution and further improving the light-emitting efficiency of the light-emitting diode for a trend of downsizing.
於是，本發明圖案化基板包含複數凸塊列單元，形成於一表面，該等凸塊列單元各沿一第一方向延伸且在一垂直該第一方向的第二方向上等距並排，每一凸塊列單元包括二第一凸塊列，各沿該第一方向延伸且於該第二方向彼此間隔並排，每一第一凸塊列具有複數沿第一方向等距間隔排列之第一凸塊，定義每一第一凸塊的一位於該第一凸塊之底面幾何中心的第一中心，且任意二緊鄰之第一凸塊的第一中心之間相互間隔一中心距離，及一第二凸塊列，在該等第一凸塊列之間沿該第一方向延伸，且其中一該第一凸塊列的第一凸塊與其中另一該第一凸塊列的第一凸塊以該第二凸塊列呈線對稱，每一第二凸塊列具有複數沿該第一方向排列，且彼此等距間隔之凸塊組，每一凸塊組具有二沿該第一方向間隔排列之第二凸塊，定義每一凸塊組的一位於該凸塊組的第二凸塊之間的凸塊組中心，每一凸塊組之第二凸塊以該凸塊組之凸塊組中心呈第一方向對稱，且任意二彼此緊鄰之凸塊組的凸塊組中心之間距離為三倍該中心距離。Thus, the patterned substrate of the present invention comprises a plurality of bump column units formed on a surface, each of the bump column units extending in a first direction and equidistantly juxtaposed in a second direction perpendicular to the first direction, each a bump column unit includes two first bump columns, each extending along the first direction and spaced apart from each other in the second direction, each first bump column having a plurality of first arrays equally spaced along the first direction a bump defining a first center of each first bump in a geometric center of a bottom surface of the first bump, and a first center distance between the first centers of any two immediately adjacent first bumps, and a a second bump row extending along the first direction between the first bump columns, and a first bump of the first bump row and a first one of the other first bump row The bumps are line-symmetric with the second bump row, each second bump column has a plurality of bump groups arranged along the first direction and equally spaced from each other, and each bump group has two along the first a second bump arranged in a direction, defining a portion of each bump group located in the bump group The center of the bump group between the bumps, the second bump of each bump group is symmetric in the first direction with the center of the bump group of the bump group, and the center of the bump group of any two of the bump groups adjacent to each other The distance between the centers is three times the distance.
在一些實施態樣中，定義每一第二凸塊的一位於該第二凸塊之底面幾何中心的第二中心，每一凸塊組之第二凸塊的第二中心間的距離為該中心距離。In some implementations, a second center of each second bump is defined at a geometric center of a bottom surface of the second bump, and a distance between second centers of the second bumps of each bump group is Center distance.
在一些實施態樣中，每一凸塊列單元之第二凸塊，是與該凸塊列單元之第一凸塊在該第二方向上呈交錯排列。In some implementations, the second bump of each bump column unit is staggered with the first bump of the bump column unit in the second direction.
在一些實施態樣中，意二彼此緊鄰之該等第一凸塊列，其中一該第一凸塊列之第一凸塊，與其中另一該第一凸塊列之第一凸塊在該第二方向上呈交錯排列。In some implementations, the first bump rows adjacent to each other, wherein the first bump of the first bump row and the first bump of the other first bump row are The second direction is staggered.
在一些實施態樣中，任意一第二凸塊之第二中心，與緊鄰該第二凸塊之任意一第一凸塊之第一中心之間的距離為該中心距離。In some implementations, the distance between the second center of any one of the second bumps and the first center of any one of the first bumps adjacent to the second bump is the center distance.
在一些實施態樣中，定義一代表每一第一凸塊之最大底部寬度的第一底寬、一代表每一第一凸塊之頂點與該表面之間垂直距離的第一高度、一代表每一第二凸塊之最大底部寬度距離的第二底寬，及一代表每一第二凸塊之頂點與該表面之間垂直距離的第二高度，該第一底寬之範圍為0.2微米至3.2微米，且該第一高度不小於該第一底寬的二分之一，該第二底寬等於該第一底寬，且該第二高度等於該第一高度。In some implementations, a first bottom width representing a maximum bottom width of each first bump, a first height representing a vertical distance between a vertex of each first bump and the surface, and a representative are defined. a second bottom width of a maximum bottom width distance of each second bump, and a second height representing a vertical distance between an apex of each second bump and the surface, the first bottom width being 0.2 micrometers Up to 3.2 microns, and the first height is not less than one-half of the first bottom width, the second bottom width is equal to the first bottom width, and the second height is equal to the first height.
在一些實施態樣中，該中心距離小於3微米。In some embodiments, the center distance is less than 3 microns.
在一些實施態樣中，每一第二凸塊列還具有複數分別位於該等凸塊組之間的第三凸塊，定義每一第三凸塊的一位於該第三凸塊之底面幾何中心的第三中心、一代表每一第三凸塊之最大底部寬度距離的第三底寬，及一代表每一第三凸塊之頂點與該表面之間垂直距離的第三高度，該第三底寬小於該第一底寬，該第三高度不小於該第三底寬的二分之一且不大於該第一高度。In some implementations, each second bump column further has a plurality of third bumps respectively located between the bump groups, and a bottom geometry of each third bump is defined at the bottom of the third bump a third center of the center, a third bottom width representing a maximum bottom width distance of each of the third bumps, and a third height representing a vertical distance between a vertex of each third bump and the surface, the first The third bottom width is smaller than the first bottom width, and the third height is not less than one-half of the third bottom width and not greater than the first height.
在一些實施態樣中，每一第二凸塊列之該等第二凸塊的第二中心及該等第三凸塊的第三中心沿該第一方向等距間隔排列。In some implementations, the second center of the second bumps of each second bump row and the third center of the third bumps are equally spaced along the first direction.
在一些實施態樣中，任意一該第三凸塊之第三中心，與緊鄰該第三凸塊之任意一該第二凸塊之第二中心之間的距離為該中心距離。In some implementations, a distance between a third center of any one of the third bumps and a second center of any one of the second bumps adjacent to the third bump is the center distance.
在一些實施態樣中，該圖案化基板包含複數凸塊列單元，形成於一表面，該等凸塊列單元各沿一第一方向延伸且在一垂直該第一方向的第二方向上並排，每一凸塊列單元包括二第一凸塊列，各沿該第一方向延伸且於該第二方向彼此間隔並排，每一第一凸塊列具有複數沿第一方向排列且彼此接觸之第一凸塊，定義每一第一凸塊的一位於該第一凸塊之底面幾何中心的第一中心，且任意二緊鄰之第一凸塊的第一中心之間相互間隔一中心距離，及一第二凸塊列，在該等第一凸塊列之間沿該第一方向延伸，且其中一該第一凸塊列的第一凸塊與其中另一該第一凸塊列的第一凸塊以該第二凸塊列呈線對稱，每一第二凸塊列具有複數沿該第一方向排列，且彼此等距間隔之凸塊組，每一凸塊組具有二沿該第一方向排列且彼此接觸之第二凸塊，定義每一凸塊組的一凸塊組中心，每一凸塊組之第二凸塊以該凸塊組之凸塊組中心呈第一方向對稱，且任意二彼此緊鄰之凸塊組的凸塊組中心之間距離為三倍該中心距離。In some implementations, the patterned substrate includes a plurality of bump column units formed on a surface, each of the bump column units extending in a first direction and side by side in a second direction perpendicular to the first direction Each bump column unit includes two first bump columns, each extending along the first direction and spaced apart from each other in the second direction, each first bump column having a plurality of first rows arranged in a first direction and contacting each other a first bump defining a first center of each first bump located at a geometric center of a bottom surface of the first bump, and a first center of any two immediately adjacent first bumps being spaced apart from each other by a center distance And a second bump row extending along the first direction between the first bump columns, and wherein the first bump of the first bump row and the other one of the first bump columns The first bumps are line symmetrical with the second bump row, each second bump column has a plurality of bump groups arranged along the first direction and equally spaced from each other, and each bump group has two edges along the a second bump arranged in the first direction and in contact with each other, defining a bump of each bump group Center, the second bump of each bump group is symmetric in a first direction with the center of the bump group of the bump group, and the distance between the centers of the bump groups of any two of the bump groups adjacent to each other is three times distance.
在一些實施態樣中，定義每一第二凸塊的一位於該第二凸塊之底面幾何中心的第二中心，每一凸塊組之第二凸塊的第二中心間的距離為該中心距離。In some implementations, a second center of each second bump is defined at a geometric center of a bottom surface of the second bump, and a distance between second centers of the second bumps of each bump group is Center distance.
在一些實施態樣中，其中，每一凸塊列單元之第二凸塊，是與該凸塊列單元之第一凸塊在該第二方向上呈交錯排列，任一第二凸塊與緊鄰該第二凸塊之第一凸塊彼此接觸，且該第二凸塊之第二中心，與緊鄰該第二凸塊之任意一第一凸塊之第一中心之間的距離為該中心距離。In some implementations, the second bump of each bump column unit is staggered with the first bump of the bump column unit in the second direction, and any second bump is The first bumps adjacent to the second bumps are in contact with each other, and the distance between the second center of the second bumps and the first center of any one of the first bumps adjacent to the second bumps is the center distance.
在一些實施態樣中，任意二彼此緊鄰之該等第一凸塊列，其中一該第一凸塊列之第一凸塊，與其中另一該第一凸塊列之第一凸塊在該第二方向上呈交錯排列，且該等第一凸塊列之第一凸塊彼此接觸。In some implementations, any two of the first bump columns adjacent to each other, wherein the first bump of the first bump row and the first bump of the other of the first bump columns are The second direction is staggered, and the first bumps of the first bump rows are in contact with each other.
在一些實施態樣中，定義一代表每一第一凸塊之最大底部寬度的第一底寬、一代表每一第一凸塊之頂點與該表面之間垂直距離的第一高度、一代表每一第二凸塊之最大底部寬度距離的第二底寬，及一代表每一第二凸塊之頂點與該表面之間垂直距離的第二高度，該第一底寬之範圍為0.2微米至3.2微米，且該第一高度不小於該第一底寬的二分之一，該第二底寬等於該第一底寬，該第二高度等於該第一高度。In some implementations, a first bottom width representing a maximum bottom width of each first bump, a first height representing a vertical distance between a vertex of each first bump and the surface, and a representative are defined. a second bottom width of a maximum bottom width distance of each second bump, and a second height representing a vertical distance between an apex of each second bump and the surface, the first bottom width being 0.2 micrometers Up to 3.2 microns, and the first height is not less than one-half of the first bottom width, the second bottom width being equal to the first bottom width, the second height being equal to the first height.
本發明之功效在於：該圖案化基板的該等第一凸塊及該等第二凸塊是呈非均勻的規則分布排列，相較於習知圖案化基板之態樣，尤其尺寸往奈米等級發展時，更能進一步增進發光二極體之出光效率。The effect of the present invention is that the first bumps and the second bumps of the patterned substrate are arranged in a non-uniform regular distribution, compared to the shape of the conventional patterned substrate, especially the size to the nanometer. When the grade is developed, the light-emitting efficiency of the light-emitting diode can be further improved.
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖1至圖4，為本發明圖案化基板之一第一實施例，該圖案化基板可應用於發光二極體之製作，並包含形成於一表面2之複數凸塊列單元1，該表面2可供發光二極體的磊晶發光層製作其上。該等凸塊列單元1各沿一第一方向(圖中為橫向)延伸且在一垂直該第一方向的第二方向(圖中為縱向)上等距並排，每一凸塊列單元1包括二各沿該第一方向延伸且於該第二方向彼此間隔並排之第一凸塊列11，及一位於該等第一凸塊列11之間且沿該第一方向延伸第二凸塊列12。Referring to FIG. 1 to FIG. 4 , a first embodiment of a patterned substrate according to the present invention is applicable to the fabrication of a light emitting diode, and includes a plurality of bump column units 1 formed on a surface 2 . The surface 2 is provided with an epitaxial light-emitting layer of a light-emitting diode. The bump column units 1 each extend in a first direction (horizontal in the drawing) and are equally spaced side by side in a second direction (longitudinal in the drawing) perpendicular to the first direction, each bump column unit 1 a first bump row 11 extending along the first direction and spaced apart from each other in the second direction, and a second bump extending between the first bump rows 11 and extending along the first direction Column 12.
參閱圖2、圖3及圖4，在該第一實施例中，每一第一凸塊列11具有複數沿第一方向等距間隔排列之第一凸塊111，定義每一第一凸塊111的一位於該第一凸塊111之底面幾何中心的第一中心112，任意一該凸塊列單元1中的其中一該第一凸塊列11的第一凸塊111，與其中另一該第一凸塊列11的第一凸塊111以該第二凸塊列12呈線對稱，換句話說，在任意一該凸塊列單元1中，該第二凸塊列12是排列在該等第一凸塊列11之中央，且其中一該第一凸塊列11之第一凸塊111的第一中心112，是與其中另一該第一凸塊列11之第一凸塊111的第一中心112在該第二方向上相互對齊。任意二緊鄰之第一凸塊111的第一中心112之間相互間隔一中心距離D，該中心距離D之較佳範圍為0.2微米至3微米間。定義一代表每一第一凸塊111之最大底部寬度的第一底寬W1，及一代表每一第一凸塊111之頂點與該表面2之間垂直距離的第一高度H1，該第一底寬W1之較佳範圍對應該中心距離D可為0.2微米至3.2微米之間，在該第一實施例中，該等第一凸塊111之底面為圓形，且該第一底寬W1小於該中心距離D，也就是說，任意二彼此緊鄰之第一凸塊111為彼此間隔，且該第一高度H1大於或等於該第一底寬W1的二分之一。Referring to FIG. 2, FIG. 3 and FIG. 4, in the first embodiment, each first bump row 11 has a plurality of first bumps 111 arranged at equal intervals along the first direction, and each first bump is defined. a first center 112 located at a geometric center of a bottom surface of the first bump 111, and a first bump 111 of one of the first bump rows 11 of the bump column unit 1 The first bumps 111 of the first bump row 11 are line-symmetric with the second bump row 12, in other words, in any one of the bump column units 1, the second bump columns 12 are arranged in a first center 112 of the first bumps 11 of the first bump row 11 and a first bump of the other first bump row 11 The first centers 112 of 111 are aligned with each other in the second direction. The first centers 112 of any two immediately adjacent first bumps 111 are spaced apart from each other by a center distance D, and the center distance D preferably ranges from 0.2 micrometers to 3 micrometers. Defining a first bottom width W1 representing a maximum bottom width of each first bump 111, and a first height H1 representing a vertical distance between a vertex of each first bump 111 and the surface 2, the first The preferred range of the bottom width W1 may be between 0.2 μm and 3.2 μm corresponding to the center distance D. In the first embodiment, the bottom surface of the first bumps 111 is circular, and the first bottom width W1 is Less than the center distance D, that is, any two first bumps 111 adjacent to each other are spaced apart from each other, and the first height H1 is greater than or equal to one-half of the first bottom width W1.
在該第一實施例中，每一第二凸塊列12具有複數沿該第一方向排列，且彼此等距間隔之凸塊組121，每一凸塊組121具有二沿該第一方向間隔排列之第二凸塊122。也就是說，第二凸塊列12中的第二凸塊12是透過兩兩為一組的凸塊組121呈規則均勻分布，但第二凸塊12本身並未呈現均勻分布，而是在每兩個第二凸塊12之間便有一個未形成凸塊結構的空間(見圖4)。定義每一凸塊組121的一位於該凸塊組121的第二凸塊122之間的凸塊組中心123、每一第二凸塊122的一位於該第二凸塊122之底面幾何中心的第二中心124、一代表每一第二凸塊122之最大底部寬度距離的第二底寬W2，及一代表每一第二凸塊122之頂點與該表面2之間垂直距離的第二高度H2，每一凸塊組121之第二凸塊122以該凸塊組121之凸塊組中心123呈第一方向對稱，且任意二彼此緊鄰之凸塊組121的凸塊組中心123之間距離為三倍該中心距離D。也就是說，二凸塊組121之間存在一明顯的間隔，每一凸塊組121之第二凸塊122的第二中心124間的距離為該中心距離D，且任意一第二凸塊122之第二中心124，與緊鄰該第二凸塊122之任意一第一凸塊111之第一中心112之間的距離為該中心距離D，該第二底寬W2等於該第一底寬W1，且該第二高度H2等於該第一高度H1。換句話說，在該第一實施例中，該等第一凸塊111與該等第二凸塊122的尺寸是相同的，但其尺寸可視狀況而調整。In the first embodiment, each of the second bump rows 12 has a plurality of bump groups 121 arranged along the first direction and equally spaced from each other, and each bump group 121 has two spaced apart along the first direction. Arranged second bumps 122. That is to say, the second bumps 12 in the second bump row 12 are uniformly distributed uniformly through the pair of bumps 121, but the second bumps 12 themselves are not uniformly distributed, but There is a space between each of the two second bumps 12 without forming a bump structure (see Fig. 4). Defining a bump group center 123 between each bump group 121 between the second bumps 122 of the bump group 121, and one of each second bump 122 is located at a bottom geometric center of the second bump 122 a second center 124, a second bottom width W2 representing a maximum bottom width distance of each second bump 122, and a second representing a vertical distance between the vertex of each second bump 122 and the surface 2 The height H2, the second bump 122 of each bump group 121 is symmetric with the center of the bump group 123 of the bump group 121, and the center of the bump group 123 of any two of the bump groups 121 adjacent to each other The distance between the centers is three times the center distance D. That is, there is a significant interval between the two bump groups 121, and the distance between the second centers 124 of the second bumps 122 of each bump group 121 is the center distance D, and any second bump The distance between the second center 124 of the second center 124 and the first center 112 of any one of the first bumps 111 adjacent to the second bump 122 is the center distance D, and the second bottom width W2 is equal to the first bottom width W1, and the second height H2 is equal to the first height H1. In other words, in the first embodiment, the first bumps 111 and the second bumps 122 have the same size, but the size thereof can be adjusted according to the situation.
在該第一實施例中，每一凸塊列單元1之第二凸塊122，是與該凸塊列單元1之第一凸塊111在該第二方向上呈交錯排列，且任意二彼此緊鄰之該等第一凸塊列11，其中一該第一凸塊列11之第一凸塊111，與其中另一該第一凸塊列11之第一凸塊111在該第二方向上呈交錯排列。In the first embodiment, the second bump 122 of each bump column unit 1 is staggered with the first bump 111 of the bump column unit 1 in the second direction, and any two of each other Immediately adjacent to the first bump row 11 , wherein the first bump 111 of the first bump row 11 and the first bump 111 of the other first bump row 11 are in the second direction Staggered.
綜合上述實施方式可知，本實施例的圖案化基板是以該凸塊列單元1為基本單位，在該表面2上形成多個不均勻但規則排列分布的第一凸塊111及第二凸塊122，並可視需要彈性配置該等凸塊列單元1的數量以及該等第一凸塊111、該等第二凸塊122的配置數量。而且，在圖3、圖4中該等第一凸塊111、該等第二凸塊122雖是呈現為半球形，但在不同實施方式中兩者也可以是半橢圓形、圓錐形、圓柱形、角錐形、角柱形等不同形狀，不以特定形貌為限。如此一來，根據前述實施方式，藉由本實施例的圖案化基板進行發光二極體的製作，相較於具有小尺寸均勻規則分布之凸塊且可磊晶的圖案化基板，該中心距離D愈小，則能提升的亮度愈多。According to the above embodiments, the patterned substrate of the present embodiment has the bump row unit 1 as a basic unit, and a plurality of uneven and regularly arranged first bumps 111 and second bumps are formed on the surface 2 . 122. The number of the bump column units 1 and the number of the first bumps 111 and the second bumps 122 are configured. Moreover, in FIG. 3 and FIG. 4, the first bumps 111 and the second bumps 122 are semi-spherical, but in different embodiments, the two bumps may also be semi-elliptical, conical, or cylindrical. Different shapes such as shape, pyramid shape, and angular column shape are not limited to specific shapes. In this way, according to the foregoing embodiment, the fabrication of the light-emitting diode is performed by the patterned substrate of the embodiment, and the center distance D is compared with the patterned substrate with a small-sized uniform regular distribution of bumps and epitaxially delineable. The smaller, the more brightness that can be boosted.
參閱圖5及圖6，為本發明圖案化基板之一第二實施例，該第二實施例與該第一實施例不同之處在於：每一第二凸塊列12還具有複數分別位於該等凸塊組121之間的第三凸塊125，也就是說在該第二凸塊列12中，該等第二凸塊122與該等第三凸塊125是以兩個、一個、兩個、一個的方式連續排列。Referring to FIG. 5 and FIG. 6 , a second embodiment of a patterned substrate according to the present invention is different from the first embodiment in that each second bump row 12 further has a plurality of The third bumps 125 between the bump groups 121, that is, in the second bump rows 12, the second bumps 122 and the third bumps 125 are two, one, two One, one way is arranged in series.
在該第二實施例中，該等第三凸塊125是以尺寸小於該等第二凸塊122的方式實施。定義每一第三凸塊125的一位於該第三凸塊125之底面幾何中心的第三中心126、一代表每一第三凸塊125之最大底部寬度距離的第三底寬W3，及一代表每一第三凸塊125之頂點與該表面2之間垂直距離的第三高度H3，該第三底寬W3較佳為小於該第一底寬W1，該第三高度H3較佳為大於或等於該第三底寬W3的二分之一且小於或等於該第一高度H1。也就是說，該等第三凸塊125之底面面積必定小於該等第一凸塊111，但該等第三凸塊125之高度可以是矮於該等第一凸塊111或是與該等第一凸塊111等高。每一第二凸塊列12之該等第二凸塊122的第二中心124及該等第三凸塊125的第三中心126沿該第一方向等距間隔排列，且任意一該第三凸塊125之第三中心126，與緊鄰該第三凸塊125之任意一該第二凸塊122之第二中心124之間的距離為該中心距離D。In the second embodiment, the third bumps 125 are implemented in a manner smaller than the second bumps 122. Defining a third center 126 of each third bump 125 at a geometric center of a bottom surface of the third bump 125, a third bottom width W3 representing a maximum bottom width distance of each third bump 125, and a a third height H3 representing a vertical distance between the apex of each of the third bumps 125 and the surface 2, the third bottom width W3 is preferably smaller than the first bottom width W1, and the third height H3 is preferably greater than Or equal to one-half of the third bottom width W3 and less than or equal to the first height H1. That is, the bottom surface area of the third bumps 125 must be smaller than the first bumps 111, but the height of the third bumps 125 may be shorter than the first bumps 111 or The first bumps 111 are of equal height. The second center 124 of the second bumps 122 of each second bump row 12 and the third center 126 of the third bumps 125 are equally spaced along the first direction, and any one of the third The distance between the third center 126 of the bump 125 and the second center 124 of any one of the second bumps 122 adjacent to the third bump 125 is the center distance D.
參閱圖7、圖8及圖9，為本發明圖案化基板之一第三實施例，該第三實施例與該第一實施例不同之處在於：每一第一凸塊列11的第一凸塊111為彼此接觸地排列，每一第二凸塊列12屬同一凸塊組121內的第二凸塊122亦為彼此接觸地排列，此外，每一第二凸塊列12的第二凸塊122，與該第二凸塊列12兩側之第一凸塊列11的第一凸塊111彼此接觸，且任意二彼此緊鄰之第一凸塊列11的第一凸塊111間亦彼此接觸。也就是說，在該第三實施例中，該中心距離D、該第一底寬W1及該第二底寬W2皆相等。Referring to FIG. 7, FIG. 8, and FIG. 9, a third embodiment of the patterned substrate of the present invention is different from the first embodiment in that: the first of each first bump row 11 The bumps 111 are arranged in contact with each other, and the second bumps 122 in each of the second bump rows 12 belonging to the same bump group 121 are also arranged in contact with each other, and further, the second of each second bump row 12 The bumps 122 are in contact with the first bumps 111 of the first bump rows 11 on both sides of the second bump row 12, and the first bumps 111 of the first bump rows 11 adjacent to each other are also Contact each other. That is, in the third embodiment, the center distance D, the first bottom width W1, and the second bottom width W2 are all equal.
綜上所述，本發明圖案化基板之該第一實施例具有非均勻分布的該等第一凸塊111及第二凸塊122，而該第二實施例還具有尺寸較小之該等第三凸塊125，相較於習知之圖案化基板能進一步增進發光二極體之出光效率，故確實能達成本發明之目的。In summary, the first embodiment of the patterned substrate of the present invention has the first bumps 111 and the second bumps 122 that are non-uniformly distributed, and the second embodiment further has the same size. The three bumps 125 can further enhance the light-emitting efficiency of the light-emitting diode compared to the conventional patterned substrate, so that the object of the present invention can be achieved.
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.
1‧‧‧凸塊列單元
11‧‧‧第一凸塊列
111‧‧‧第一凸塊
112‧‧‧第一中心
12‧‧‧第二凸塊列
121‧‧‧凸塊組
122‧‧‧第二凸塊
123‧‧‧凸塊組中心
124‧‧‧第二中心
125‧‧‧第三凸塊
126‧‧‧第三中心
2‧‧‧表面
D‧‧‧中心距離
W1‧‧‧第一底寬
H1‧‧‧第一高度
W2‧‧‧第二底寬
H2‧‧‧第二高度
W3‧‧‧第三底寬
H3‧‧‧第三高度1‧‧‧Bump column unit
11‧‧‧First bump column
111‧‧‧First bump
112‧‧‧First Center
12‧‧‧second bump column
121‧‧‧Bump group
122‧‧‧second bump
123‧‧‧bump group center
124‧‧‧ Second Center
125‧‧‧ third bump
126‧‧ Third Centre
2‧‧‧ surface
D‧‧‧Center distance
W1‧‧‧ first base width
H1‧‧‧ first height
W2‧‧‧ second bottom width
H2‧‧‧second height
W3‧‧‧ third bottom width
H3‧‧‧ third height
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是本發明圖案化基板之一第一實施例的一部分俯視圖，說明複數凸塊列單元之排列方式； 圖2是該第一實施例之一部分俯視圖，說明單一個凸塊列單元中的二第一凸塊列及一第二凸塊列之排列方式； 圖3是該第一實施例之一第一凸塊列的一部分側視剖面示意圖； 圖4是該第一實施例之一第二凸塊列的一部分側視剖面示意圖； 圖5是本發明圖案化基板之一第二實施例的一部分俯視圖； 圖6是該第二實施例之一第二凸塊列的一部分側視剖面示意圖； 圖7是本發明圖案化基板之一第三實施例的一部分俯視圖； 圖8是該第三實施例之一第一凸塊列的一部分側視剖面示意圖；及 圖9是該第三實施例之一第二凸塊列的一部分側視剖面示意圖。Other features and advantages of the present invention will be apparent from the embodiments of the drawings, wherein: Figure 1 is a partial plan view of a first embodiment of a patterned substrate of the present invention, illustrating the arrangement of a plurality of bump column elements 2 is a partial plan view of the first embodiment, illustrating the arrangement of two first bump rows and one second bump row in a single bump column unit; FIG. 3 is one of the first embodiments. 4 is a side cross-sectional view of a first bump row; FIG. 4 is a partial side cross-sectional view of a second bump row of the first embodiment; FIG. 5 is a portion of a second embodiment of a patterned substrate of the present invention; Figure 6 is a partial side cross-sectional view of a second bump row of the second embodiment; Figure 7 is a partial plan view of a third embodiment of the patterned substrate of the present invention; Figure 8 is a third embodiment A side cross-sectional view of a portion of the first bump row; and FIG. 9 is a partial side cross-sectional view of the second bump row of the third embodiment.
1‧‧‧凸塊列單元 1‧‧‧Bump column unit
11‧‧‧第一凸塊列 11‧‧‧First bump column
111‧‧‧第一凸塊 111‧‧‧First bump
112‧‧‧第一中心 112‧‧‧First Center
12‧‧‧第二凸塊列 12‧‧‧second bump column
122‧‧‧第二凸塊 122‧‧‧second bump
124‧‧‧第二中心 124‧‧‧ Second Center
2‧‧‧表面 2‧‧‧ surface
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