TW201727928A - Ultraviolet light sensor and fabrication method thereof - Google Patents

Abstract

The present disclosure provides an ultraviolet light sensor and a fabrication method thereof. Coating a HfO2 layer on ZnO nanorods by atomic layer chemical vapor deposition method can decrease the surface state density of the ZnO nanorods. Therefore, the sensing efficiency of the ultraviolet light sensor can be improved.

Description

Ultraviolet light sensor and manufacturing method thereof

The present invention relates to a photosensor and a method of fabricating the same, and more particularly to an ultraviolet photosensor and a method of fabricating the same.

Zinc oxide (ZnO) is a very popular semiconductor material in recent years. It belongs to the direct bandgap. The energy gap at room temperature is about 3.37 eV (electron volt), which belongs to the hexagonal system. Wurtzite) structure. In addition, the advantage of zinc oxide compared to other semiconductor materials is the larger exciton binding energy, which is about 60 meV (mElvolts). Therefore, the zinc oxide material at room temperature has a high exciton radiation efficiency, and short-wavelength photovoltaic elements such as a light emitting diode (LED), a laser diode (LD), and Applications such as Photodetector (PD) have considerable potential for development.

So far, one-dimensional structure of zinc oxide nano-columns (Nanorods, NRs) has become a very popular research object, and the preparation is currently more commonly used in the hydrothermal process (Hydrothermal process), which is not only compared to other The preparation method has the advantages of lower cost, and more Preparation is carried out in an atmosphere of one atmosphere and a lower temperature, so that a material having a lower melting point can be selected as a substrate, and the possibility of developing a flexible element in the future is possible.

In addition, the subsequent development advantage of the photosensor with one-dimensional nanostructure is that the power consumed by the sensing component is greatly reduced, and the application integration of various semiconductor materials is improved, thereby not only selecting more diversity but also increasing sensing. Sensitive. The most important thing is still its miniaturized size, which can be integrated with micromachining technology and MEMS, and mass-produced to reduce costs.

However, it is well known that zinc oxide has a variety of luminescent transition energy bands, such as ultraviolet light, green light, orange light, and near-infrared light, etc., ultraviolet light is its essence, and all other electrons and impurities can be The transition of the order is related. The luminescence mechanism of ultraviolet light is mainly due to the direct energy gap hopping of electrons between the band and the band. The electrons of the valence band are excited by the high energy light to the conductive band. When the electrons jump back to the price band again, the excess energy is released in the form of ultraviolet light. If it is outside the ultraviolet band, it is mainly caused by zinc and oxygen vacancies in the zinc oxide lattice.

Therefore, if the photoelectric effect of the direct energy gap transition of the one-dimensional structure of zinc oxide is effectively utilized as the ultraviolet light sensor, it is necessary to reduce the surface state density of the zinc oxide surface, thereby suppressing the non-radiation of the carrier. complex.

It is an object of the present invention to provide an ultraviolet light sensor and a method of fabricating the same that reduce the surface energy density of a zinc oxide nanostructure, thereby improving the ultraviolet light sensing efficiency between the energy gaps in the zinc oxide.

An embodiment of the present invention provides an ultraviolet light sensor comprising a substrate, a seed layer, a plurality of zinc oxide nano columns, a germanium dioxide layer, and a metal electrode. The seed layer is on the substrate. A zinc oxide nanocolumn is arranged on the seed layer. The ruthenium dioxide layer is coated on the zinc oxide nano-pillar along the surface of each zinc oxide nano-column and the gap of the zinc oxide nano-column. The metal electrode is on the ruthenium dioxide layer.

According to one embodiment of the foregoing ultraviolet light sensor, wherein the seed layer is aluminum-doped ZnO, and is 98 wt% (weight percent) zinc oxide and 2 wt% (weight percent concentration) The composition of the aluminum oxide, the thickness of the seed layer can be 70 nm (nano). Each zinc oxide nanocolumn may have a diameter of 40 to 60 nm (nano), each zinc oxide nanocolumn may have a length of 300 nm to 360 nm (nano), and the zinc oxide nanocolumn has a density of 2.4 in the seed layer. ×10 ¹⁰ /cm ² (pieces per square centimeter). The thickness of the ruthenium dioxide layer may be 50 nm (nano). The substrate comprises a glass and a transparent conductive film layer, and the transparent conductive film layer is located between the glass and the seed layer.

Another embodiment of the present invention provides a method of fabricating the above-described ultraviolet light sensor. The manufacturing method includes a sputtering step, a hydrothermal step, an atomic layer deposition step, and an evaporation step. The sputtering step is performed by plating a seed layer on a substrate. The hydrothermal process is performed by growing a majority of zinc oxide nano columns on the seed layer. The Atomic Layer Deposition step is to cover a layer of cerium oxide along the outer surface of each zinc oxide nanocolumn and the gap between the zinc oxide nano columns. Zinc on the nano column. The evaporation step is performed by plating a metal electrode on the ceria layer.

According to an embodiment of the foregoing manufacturing method, a first cleaning step is further included, and the first cleaning step is performed to clean the surface of the substrate before the sputtering step. The first cleaning step comprises washing the substrate with acetone, isopropanol and deionized water in combination with ultrasonic vibration, respectively; drying the surface of the substrate with nitrogen; baking the substrate for one minute. The sputtering step comprises placing the substrate in a sputtering vacuum system; controlling the pressure in the sputtering vacuum system to be maintained at 2×10 ^-6 torr (Torr); and introducing an argon gas having a flow rate of 5 sccm (ml/min); Control the pressure in the sputtering vacuum system to be maintained at 6 × 10 ^-3 torr (Torr), and heat the substrate to 100 ° C; sputter a 70 nm (nano) seed layer at a RF power of 90 W (Watt) On the substrate. The manufacturing method further includes a second cleaning step of performing a second cleaning step between the sputtering step and the hydrothermal step to clean the surface of the seed layer. The second cleaning step comprises separately washing the substrate with acetone, isopropanol and deionized water in combination with ultrasonic vibration; drying the surface of the seed layer on the substrate with nitrogen; baking the substrate and the seed layer for one minute. The hydrothermal step comprises dissolving zinc acetate, hexamethylenetetramine and deionized water into one reaction solution having a concentration of 0.01 M to 0.02 M (mole/liter); heating the reaction solution to 90 ° C in water; The substrate of the sputtering step is placed in the reaction solution; the reaction solution is maintained at 90 ° C for 60 minutes to grow a zinc oxide nano column on the seed layer on the substrate. The manufacturing method further includes a third cleaning step of performing a third cleaning step between the hydrothermal step and the atomic layer deposition step to clean the surface of the zinc oxide nanocolumn. The third cleaning step comprises: cleaning the substrate, the seed layer and the zinc oxide nano column with deionized water in combination with ultrasonic vibration; drying the surface of the zinc oxide nano column with nitrogen; baking the heating substrate, the seed layer and the zinc oxide naphthalene Rice column for one minute. The manufacturing method further includes a fourth cleaning step of performing a fourth cleaning step between the third cleaning step and the atomic layer deposition step to thereby clean the surface of the zinc oxide nano column again. The fourth cleaning step comprises separately cleaning the substrate, the seed layer and the zinc oxide nano column with acetone, isopropanol and deionized water in combination with ultrasonic vibration; drying the surface of the zinc oxide nano column with nitrogen; baking the substrate , seed layer and zinc oxide nano column for one minute. The atomic layer deposition method comprises vacuuming, heating the substrate, the seed layer and the zinc oxide nano column to 250 ° C, injecting tetrakis-(ethylmethylamino acid)-ruthenium (TEMAH), introducing nitrogen gas, and injecting water vapor. And the nitrogen dioxide layer was again introduced to grow the ceria layer on the zinc oxide nano column to a thickness of 50 nm (nano).

Therefore, the ultraviolet light sensor and the method for fabricating the same according to the present invention use the atomic layer deposition method to grow a ceria layer covering the surface of the zinc oxide nano column, and do not fill the gap between the original zinc oxide nano columns. Therefore, it not only reduces the surface energy density of the zinc oxide nanostructure, but also maintains the illuminating surface area of the original zinc oxide nanocolumn, thereby improving the ultraviolet light sensing efficiency between the energy gaps in the zinc oxide, and solving the zinc oxide in the prior art. UV light sensor has the disadvantage of poor light sensing efficiency.

100‧‧‧UV sensor

200‧‧‧Substrate

210‧‧‧ glass

220‧‧‧Transparent conductive film layer

300‧‧‧ seed layer

400‧‧‧Zinc Oxide Nano Column

500‧‧‧ cerium oxide layer

600‧‧‧Metal electrode

S01‧‧‧First cleaning step

S02‧‧‧ Sputtering step

S03‧‧‧Second cleaning steps

S04‧‧‧ hydrothermal method steps

S05‧‧‧ Third cleaning step

S06‧‧‧Four cleaning steps

S07‧‧‧Atomic layer deposition method steps

S08‧‧‧ evaporation step

The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Stereoscopic view.

Figure 2 is a partial perspective cross-sectional view showing the ultraviolet sensor of Figure 1.

Fig. 3 is a flow chart showing the manufacture of the ultraviolet sensor of Fig. 1.

Fig. 4 is a schematic view showing the manufacture of the ultraviolet light sensor of Fig. 1.

Fig. 5A is a plan view showing the growth of a zinc oxide nano column by a reaction solution having a concentration of 0.01 M.

Fig. 5B is a cross-sectional view showing the growth of a zinc oxide nano column by a reaction solution having a concentration of 0.01 M.

Fig. 6A is a plan view showing the growth of a zinc oxide nano column by a reaction solution having a concentration of 0.02 M.

Fig. 6B is a cross-sectional view showing the growth of a zinc oxide nano column by a reaction solution having a concentration of 0.02 M.

Fig. 7 is a plan view showing the deposition of a cerium oxide layer after growing a zinc oxide nano column with a concentration of 0.01 M.

Fig. 8 is a plan view showing the deposition of a cerium oxide layer after growing a zinc oxide nano column with a concentration of 0.02 M.

Figure 9A is a photo-response spectrum diagram showing the growth of a zinc oxide nano column with a concentration of 0.01 M reaction solution and fabrication of an ultraviolet light sensor.

Figure 9B is a diagram showing the optical response spectrum of a zinc oxide nanometer column grown in a concentration of 0.02 M reaction solution to produce an ultraviolet light sensor.

Fig. 10 is a graph showing the comparison of the photoluminescence of the presence or absence of the ceria layer with a 0.01 M reaction solution zinc oxide nano column.

Figure 11 is a graph showing the current-voltage comparison of the gold semi-structure and the gold oxide half-structure zinc oxide nano column in the absence of illumination.

Please refer to FIG. 1 and FIG. 2 , wherein FIG. 1 is a schematic perspective view of an ultraviolet light sensor 100 according to an embodiment of the invention, and FIG. 2 is a partial perspective view of the ultraviolet light sensor 100 . Schematic diagram of the section. The ultraviolet light sensor 100 includes a substrate 200, a seed layer 300, a plurality of zinc oxide nano columns 400, a germanium dioxide layer 500, and a metal electrode 600.

The substrate 200 includes a glass 210 and a transparent conductive film layer 220, and the transparent conductive film layer 220 is located on the glass 210. The good light transmittance and conductive properties of the transparent conductive film layer 220 can increase the sensing efficiency of the photocurrent generated by the ultraviolet light.

The seed layer 300 is located on the substrate 200. The seed layer 300 is Al-doped ZnO, and more specifically consists of 98% by weight of zinc oxide and 2% by weight of aluminum oxide. The seed layer 300 may have a thickness of 70 nm. The seed layer 300 is used to increase the growth rate and the arrangement density of the zinc oxide nano-column 400. In addition, the use of zinc oxide-doped aluminum as the seed layer 300 not only provides excellent ultraviolet light transmittance, but also improves the load. Subconcentration, thereby increasing conductivity.

Most of the zinc oxide nano-pillars 400 are arranged in the seed layer 300 and are arranged substantially in a direction perpendicular to the seed layer 300. Each zinc oxide nano column 400 may have a diameter of 40 nm to 60 nm, each zinc oxide nano column 400 may have a length of 300 nm to 360 nm, and the zinc oxide nano column 400 may have an arrangement density of 2.4×10 on the seed layer 300. ¹⁰ /cm ² . It is worth mentioning that the zinc oxide nano column 400 is used to absorb ultraviolet light and is converted into electric energy. Therefore, the larger the illumination surface area of the zinc oxide nano column 400, the better the efficiency of absorbing ultraviolet light. The diameter, length and arrangement density of the zinc oxide nano-column 400 are the optimum values of the ultraviolet light sensor 100 of the embodiment after long-term experiments. Since the diameter of the zinc oxide nanocolumn 400 is too large, the arrangement density thereof is lowered, so that the illuminating surface area of all the zinc oxide nanocolumns 400 is also reduced. On the other hand, if the length of the zinc oxide nano-column 400 is too high, the top end of each zinc oxide nano-column 400 will gradually grow laterally and closely, so that the surface area of all the zinc oxide nano-pillars 400 increases, However, the side surface of the zinc oxide nanocolumn 400 is no longer exposed to ultraviolet light, reducing its effective illumination area.

The cerium oxide layer 500 is deposited on the zinc oxide nanocolumn 400 along the surface of each zinc oxide nanocolumn 400 and the gap of the zinc oxide nanocolumn 400, and may cover a thickness of 50 nm. Covering the surface of the zinc oxide nanocolumn 400 with the ceria layer 500 can produce a surface passivation effect, thereby suppressing the defect luminescence mechanism of the surface energy state caused by zinc and oxygen vacancies in the zinc oxide crystal lattice.

The metal electrode 600 is located on the ceria layer 500. The method of manufacturing the aforementioned ultraviolet light sensor 100 will be described in detail below.

Please refer to FIG. 3 and FIG. 4 , wherein FIG. 3 is a manufacturing flow chart of the ultraviolet light sensor 100, and FIG. 4 is a schematic view showing the manufacturing of the ultraviolet light sensor 100. The manufacturing method of the ultraviolet light sensor 100 includes a first cleaning step S01, a sputtering step S02, a second cleaning step S03, a hydrothermal step S04, a third cleaning step S05, and a fourth cleaning step S06. An atomic layer deposition method step S07 and an evaporation step S08. In FIG. 4, the illustration of the first cleaning step S01, the second cleaning step S03, the third cleaning step S05, and the fourth cleaning step S06 in FIG. 3 is omitted.

The first cleaning step S01 is performed before the sputtering step S02, and the first cleaning step S01 is sequentially as follows: acetone, isopropyl alcohol and separation are respectively used. The sub-water is ultrasonically oscillated to clean the substrate 200; the surface of the substrate 200 is blown dry with nitrogen; and the substrate 200 is baked and heated for one minute.

The sputtering step S02 is performed by plating the seed layer 300 on the substrate 200 to facilitate subsequent growth of the zinc oxide nano column 400. The sputtering step S02 mainly uses high energy ions to impinge on the zinc oxide doped aluminum target, so that the zinc oxide doped aluminum atoms obtain kinetic energy and are emitted onto the substrate 200, and gradually deposit to form the seed layer 300. The detailed step of the sputtering step S02 is to place the substrate 200 in a sputtering vacuum system; to control the pressure in the sputtering vacuum system to be maintained at 2×10 ^-6 torr; to pass the argon gas at a flow rate of 5 sccm; to control the sputtering vacuum The pressure in the system was maintained at 6 × 10 ^-3 torr, and the substrate was heated to 200 ° C; a seed layer 300 having a thickness of 70 nm was sputtered onto the substrate 200 at a radio frequency of 90 W. It is of course also possible to use other materials as the seed layer 300, which is not limited in this embodiment.

The second cleaning step S03 is performed between the sputtering step S02 and the hydrothermal step S04 to clean the surface of the seed layer 300. The second cleaning step S03 is the same as the first cleaning step S01.

The hydrothermal method step S04 is to grow a majority of the zinc oxide nano column 400 on the seed layer 300. The hydrothermal method step S04 is as follows: zinc acetate, hexamethylenetetramine and deionized water are prepared into a reaction solution having a concentration of 0.01 M to 0.02 M; the reaction solution is heated to 90 ° C in water; the sputtering is completed. The substrate 200 of the step S02 is placed in the reaction solution; the reaction solution is maintained at 90 ° C for 60 minutes to grow the zinc oxide nano column 400 on the seed layer 300 on the substrate 200.

The third cleaning step S05 is performed between the hydrothermal method step S04 and the atomic layer deposition method step S07 to clean the surface of the zinc oxide nanocolumn 400. The third cleaning step S05 is larger than the second cleaning step S03 and the first cleaning step S01 The difference is that the third cleaning step S05 uses only deionized water in combination with ultrasonic vibration to clean the substrate 200, the seed layer 300, and the zinc oxide nano column 400 without using acetone and isopropyl alcohol.

The fourth cleaning step S06 is performed between the third cleaning step S05 and the atomic layer deposition method step S07 to clean the surface of the zinc oxide nano column 400 again. The fourth cleaning step S06 is the same as the second cleaning step S03 and the first cleaning step S01.

The atomic layer deposition method step S07 covers the ceria layer 500 on the zinc oxide nano column 400 along the outer surface of each zinc oxide nano column 400 and the gap of the zinc oxide nano column 400, more specifically, atomic layer deposition. The method step S07 is to use the Atomic layer chemical vapor deposition method to grow the cerium oxide layer 500, thereby controlling the cerium oxide layer 500 to be coated with the zinc oxide nano column 400 in a thin film manner, and The gaps in the zinc oxide nanocolumn 400 are filled to still have a cylindrical appearance while retaining the maximum illuminating surface area. The atomic layer deposition method step S07 is sequentially as follows: (a) vacuuming, (b) heating the substrate 200, the seed layer 300, and the zinc oxide nano column 400 to 250 ° C, (c) injecting tetra-(ethyl methylamine) Base acid)-铪 (TEMAH), (d) nitrogen gas is introduced, (e) water vapor is injected, and (f) nitrogen gas is introduced again, and (c) to (d) are repeated for about 500 times to have a thickness of 50 nm. The yttria layer 500 is grown on the zinc oxide nanocolumn 400.

The vapor deposition step S08 is performed by plating a metal electrode 600 on the ceria layer 500. In the vapor deposition step S08, the kinetic energy of the high-energy electron beam is converted into thermal energy, and the metal target is evaporated and then deposited on the ceria layer 500 to form the metal electrode 600.

Thereby, the first cleaning step S01, the sputtering step S02, the second cleaning step S03, the hydrothermal method step S04, the third cleaning step S05, the fourth cleaning step S06, the atomic layer deposition method step S07, and steaming are sequentially performed. The plating step S08 can produce an ultraviolet light sensor 100 having high ultraviolet light detection efficiency.

Please refer to Figures 5A, 5B, 6A and 6B, wherein Figures 5A and 5B show a top view and a cross-sectional view, respectively, after growing a zinc oxide nano column 400 with a concentration of 0.01 M reaction solution, Figures 6A and 6B. The top view and the cross-sectional view of the zinc oxide nano column 400 grown in a concentration of 0.02 M reaction solution are shown. In order to find the optimum process quality of the zinc oxide nano column 400, 0.005M, 0.01M, 0.02M and 0.04M are used in the hydrothermal step S04 of Fig. 3 to prepare different concentrations of the reaction solution and grow zinc oxide. Nano column 400. The experimental results are organized as follows:

Thereby, the reaction solution having a concentration of 0.005 M can be analyzed, which causes the arrangement density of the zinc oxide nano-column 400 to be too high, and the length and diameter thereof are too small, and the overall illuminable area of the zinc oxide nano-column 400 is reduced. On the contrary, the reaction solution having a concentration of 0.04 M causes the arrangement density of the zinc oxide nano-column 400 to be too low, and the length and diameter thereof are too large, and the zinc oxide nano-columns 400 are connected to each other, and the zinc oxide naphthalene is also reduced. The overall illuminable surface area of the rice column 400. Therefore, experiments have shown that a reaction solution of 0.01 M to 0.02 M is a preferred concentration range of the growth of the zinc oxide nano column 400.

Then, the ultraviolet light sensor 100 of Fig. 1 was produced by growing the zinc oxide nano column 400 with a reaction solution of 0.01 M to 0.02 M. Please refer to Fig. 7, Fig. 8, Fig. 9A and Fig. 9B. Here, FIG. 7 is a plan view showing the deposition of the ceria layer 500 after the zinc oxide nano column 400 is grown at a concentration of 0.01 M. Fig. 8 is a plan view showing the deposition of the ceria layer 500 after the zinc oxide nano column 400 is grown at a concentration of 0.02 M. FIG. 9A is a diagram showing the optical response spectrum of the ultraviolet light sensor 100 grown by growing the zinc oxide nano column 400 with a concentration of 0.01 M. FIG. 9B is a diagram showing the optical response spectrum of the ultraviolet light sensor 100 grown by growing the zinc oxide nano column 400 at a concentration of 0.02 M.

The optical response spectrum diagram mainly uses the incident light of different wavelengths to illuminate the ultraviolet light sensor 100 and detect the sensing current. Among them, the purpose of extra bias (-2V to 2V) is that the current converted into light is small, and when there are more defects inside the zinc oxide nano-column 400, the electron hole pairs generated by the illumination are easy to be compounded. To the defect, the probe does not extract enough current signals, so the external bias voltage is used to help extract the current signal of the ultraviolet sensor 100. by In the above figure, the ultraviolet light sensor 100 manufactured by the reaction solution having a concentration of 0.01 M can be seen, and the optical frequency response at a wavelength of about 350 nm in the ultraviolet light band can reach 1.29 amps/watt, so ultraviolet light (350 nm) is visible light (wavelength 500 nm). The mutual rejection ratio (rejection ratio) is about 873; and the ultraviolet light sensor 100 manufactured by the concentration of 0.02 M reaction solution has an optical frequency response of about 2.41 amps/watt at a wavelength of about 350 nm in the ultraviolet light band, so the ultraviolet light The mutual exclusion ratio of light (350 nm) to visible light (at a wavelength of 500 nm) is about 151. Since the ultraviolet light sensor 100 manufactured by the reaction solution of 0.01 M and 0.02 M has good optical frequency response and mutual exclusion ratio of ultraviolet light to visible light, it can be inferred that the concentration is between 0.01 M and 0.02 M for growth. The optimum concentration of zinc oxide nanocolumn 400.

Here, a photo-excited fluorescence experiment in which the cerium oxide-coated layer 500 and the uncovered cerium oxide layer 500 were carried out was also carried out for the growth of the zinc oxide nano-column 400 with a concentration of 0.01 M. Referring to Fig. 10, there is shown a comparison of the photoluminescence of the presence or absence of the ceria layer 500 in the zinc oxide nano column 400 grown at a concentration of 0.01 M. The zinc oxide nanocolumn 400 covering the cerium oxide layer 500 exhibits a peak in the ultraviolet light band at 380 nm, and its full width at half maximum is 19 nm, and the zinc oxide nano column 400 without the cerium oxide layer 500 is covered. At 378 nm, the peak of the ultraviolet band appeared, and the full width at half maximum was 21 nm. Therefore, it has been experimentally proved that the zinc oxide nano column 400 covering the ceria layer 500 is relatively free of the zinc oxide nano column 400 covering the ceria layer 500, and not only the peak intensity of the photo-induced fluorescence is strong, but also the full width at half maximum (FWHM). Also narrower.

Please refer to Fig. 11, wherein Fig. 11 is a graph showing current-voltage comparison of the gold semi-structure and the gold oxide half structure zinc oxide nano column 400 in the absence of illumination. As can be seen from the figure, since the ultraviolet light sensor 100 has a gold oxide half structure, Therefore, compared with the gold-oxygen structure, the leakage current can be low. The main reason is that the use of atomic deposition of cerium oxide on the zinc oxide nano-column 400 can provide a barrier to effectively suppress the defects of the zinc oxide nano-column 400. In order to reduce the non-radiative recombination of the carrier, the leakage current is reduced.

Therefore, the ultraviolet light sensor and the method for fabricating the same according to the present invention cover a surface of a zinc oxide nano column with a thickness of only 50 nm, and do not fill the gap between the original zinc oxide nano columns. The surface energy density of the zinc oxide nanostructure can be reduced, and the illuminating surface area of the original zinc oxide nanometer column can be preserved. Compared with the structure of the prior art, the zinc oxide ultraviolet light sensor does not cover the structure of the cerium oxide. The photo sensor effectively suppresses the luminescence mechanism generated by the impurity energy level and improves the ultraviolet light sensing efficiency between the energy gaps in the zinc oxide.

In addition, the present invention also experimentally demonstrates that the optimum reaction solution concentration for growing a zinc oxide nano column by hydrothermal method is from 0.01 M to 0.02 M. If the reaction solution is lower than the concentration of 0.01 M, the zinc oxide nano column arrangement density is too high, and the radius and length of the zinc oxide nano column are slightly smaller. If the reaction solution is higher than the concentration of 0.02M, the zinc oxide nano column arrangement density is too low, and the radius and length of the zinc oxide nano column are slightly larger. Therefore, whether it is below the concentration of 0.01 M or higher than 0.02 M, the growth of the zinc oxide nano column will result in a smaller illuminating surface area.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100‧‧‧UV sensor

200‧‧‧Substrate

210‧‧‧ glass

220‧‧‧Transparent conductive film layer

300‧‧‧ seed layer

400‧‧‧Zinc Oxide Nano Column

500‧‧‧ cerium oxide layer

600‧‧‧Metal electrode

Claims (19)

An ultraviolet light sensor comprising: a substrate; a seed layer on the substrate; a plurality of zinc oxide nano columns arranged on the seed layer; a germanium dioxide layer along each of the zinc oxide The surface of the rice column and the gaps of the zinc oxide nano columns cover the zinc oxide nano columns; and a metal electrode is disposed on the ceria layer. The ultraviolet light sensor of claim 1, wherein the seed layer is aluminum-doped ZnO. The ultraviolet light sensor of claim 2, wherein the seed layer is composed of 98 wt% zinc oxide and 2 wt% aluminum oxide. The ultraviolet light sensor of claim 1, wherein the seed layer has a thickness of 70 nm. The ultraviolet light sensor according to claim 1, wherein each of the zinc oxide nano columns has a diameter of 40 nm to 60 nm, and each of the zinc oxide nano columns has a length of 300 nm to 360 nm, and the zinc oxide naphthalenes. The arrangement density of the rice pillars in the seed layer was 2.4 × 10 ¹⁰ /cm ² . The ultraviolet sensor of claim 1, wherein the cerium oxide layer has a thickness of 50 nm. The ultraviolet sensor of claim 1, wherein the substrate comprises a glass and a transparent conductive film layer, the transparent conductive film layer being located between the glass and the seed layer. A manufacturing method for manufacturing the ultraviolet light sensor according to claim 1, wherein the step of the manufacturing method comprises: a sputtering step of plating a seed layer on a substrate; a hydrothermal method a step of growing a plurality of zinc oxide nano columns on the seed layer; and an atomic layer deposition step of covering a layer of ceria along the outer surface of each of the zinc oxide nano columns and the gaps of the zinc oxide nano columns On the zinc oxide nano columns; and an evaporation step, a metal electrode is plated on the ceria layer. The manufacturing method of claim 8, further comprising a first cleaning step of performing the first cleaning step to clean the surface of the substrate before the sputtering step. The manufacturing method of claim 9, wherein the first cleaning step comprises: washing the substrate with acetone, isopropyl alcohol, and deionized water in combination with ultrasonic vibration; The surface of the substrate was blown dry with nitrogen; and the substrate was baked and heated for one minute. The manufacturing method of claim 9, further comprising a second cleaning step of performing the second cleaning step between the sputtering step and the hydrothermal step to clean the surface of the seed layer. The manufacturing method of claim 11, wherein the second cleaning step comprises: washing the substrate with acetone, isopropyl alcohol, and deionized water in combination with ultrasonic vibration, respectively; drying the substrate on the substrate using nitrogen gas. The surface of the layer; and baking the substrate and the seed layer for one minute. The manufacturing method of claim 11, further comprising a third cleaning step of performing the third cleaning step between the hydrothermal step and the atomic layer deposition step to clean the zinc oxide nano The surface of the column. The manufacturing method of claim 13, wherein the third cleaning step comprises: cleaning the substrate, the seed layer and the zinc oxide nano columns with deionized water in combination with ultrasonic vibration; drying with nitrogen gas The surface of the zinc oxide nanocolumn; The substrate, the seed layer and the zinc oxide nano columns are baked for one minute. The manufacturing method of claim 13, further comprising a fourth cleaning step, performing the fourth cleaning step between the third cleaning step and the atomic layer deposition step to clean the zinc oxide naphthalene again The surface of the rice column. The manufacturing method of claim 15, wherein the fourth cleaning step comprises: cleaning the substrate, the seed layer and the zinc oxide naphthalate by using ultrasonic, isopropyl alcohol, and deionized water, respectively, in combination with ultrasonic vibration a column of rice; drying the surface of the zinc oxide nano column with nitrogen; and baking the substrate, the seed layer and the zinc oxide nano column for one minute. The manufacturing method of claim 8, wherein the sputtering step comprises: placing the substrate in a sputtering vacuum system; controlling the pressure in the sputtering vacuum system to be maintained at 2 × 10 ^-6 torr; Passing argon gas at a flow rate of 5 sccm; controlling the pressure in the sputtering vacuum system to be maintained at 6 × 10 ^-3 torr, and heating the substrate to 100 ° C; and sputtering the seed layer having a thickness of 70 nm at a radio frequency of 90 W On the substrate. The manufacturing method according to claim 8, wherein the hydrothermal step comprises: formulating zinc acetate, hexamethylenetetramine and deionized water into a reaction solution having a concentration of 0.01 to 0.02 M; The solution is heated to 90 ° C in water; the substrate in which the sputtering step is completed is placed in the reaction solution; and the reaction solution is maintained at 90 ° C for 60 minutes to grow the zinc oxide nano columns on the substrate. Seed layer. The manufacturing method of claim 8, wherein the atomic layer deposition method comprises: vacuuming; heating the substrate, the seed layer, and the zinc oxide nano columns to 250 ° C; injecting four-( Ethylmethylamino acid)-indole (TEMAH); nitrogen gas was introduced; water vapor was injected; and nitrogen dioxide was again introduced to grow the ceria layer on the zinc oxide nano column to a thickness of 50 nm.