TW201724646A - Electronic device - Google Patents

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Publication number
TW201724646A
TW201724646A TW104143654A TW104143654A TW201724646A TW 201724646 A TW201724646 A TW 201724646A TW 104143654 A TW104143654 A TW 104143654A TW 104143654 A TW104143654 A TW 104143654A TW 201724646 A TW201724646 A TW 201724646A
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Taiwan
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housing
parasitic
electronic device
radiating
dual
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TW104143654A
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Chinese (zh)
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楊崇文
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宏碁股份有限公司
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Priority to TW104143654A priority Critical patent/TW201724646A/en
Publication of TW201724646A publication Critical patent/TW201724646A/en

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Abstract

An electronic device including a housing structure, a ground plane and a dual-band antenna is provided. The housing structure includes a first housing for forming a side wall of the electronic device. The dual-band antenna includes a radiation element and a parasitic element. The radiation element includes a feeding point and a resonant path from the feeding point to the ground plane, and the dual-band antenna operates in a first band through the radiation element. The parasitic element is connected to the ground plane and includes a first parasitic portion and a second parasitic portion. The second parasitic portion is located between the first housing and the radiation element and is spaced apart a coupling distance from the radiation element. The dual-band antenna operates in a second band through the parasitic element, and a center frequency of the second band is lower than a center frequency of the first band.

Description

電子裝置Electronic device

本發明是有關於一種電子裝置,且特別是有關於一種包括雙頻天線的電子裝置。The present invention relates to an electronic device, and more particularly to an electronic device including a dual frequency antenna.

近年來,可操作在2.4GHz與5GHz的雙頻天線被廣泛地應用在各種電子裝置,例如:平板電腦與筆記型電腦,以致使電子裝置可透過雙頻天線來支援WiFi標準下的通訊功能。一般而言,傳統雙頻天線大多是採用平面倒F型天線(PIFA)的架構。此外,當具有PIFA架構的傳統雙頻天線應用在電子裝置時,電子裝置在安規測試中所量測出的特定吸收率(specific absorption ratio,簡稱SAR)往往會有過高的問題。In recent years, dual-band antennas that can operate at 2.4 GHz and 5 GHz have been widely used in various electronic devices, such as tablet computers and notebook computers, so that electronic devices can support communication functions under the WiFi standard through dual-frequency antennas. In general, traditional dual-band antennas are mostly architectures using a planar inverted-F antenna (PIFA). In addition, when a conventional dual-band antenna with a PIFA architecture is applied to an electronic device, the specific absorption ratio (SAR) measured by the electronic device in the safety test often has an excessive problem.

因此,當具有PIFA架構的傳統雙頻天線應用在電子裝置時,電子裝置往往必須降低傳統雙頻天線的發射功率,以符合SAR值的規範。但是,隨著傳統雙頻天線之發射功率的降低,電子裝置的通訊品質也會受到影響。因此,如何兼顧SAR值的規範以及電子裝置的通訊品質,已是電子裝置在設計上的一重要課題。Therefore, when a conventional dual-band antenna having a PIFA architecture is applied to an electronic device, the electronic device often has to reduce the transmission power of the conventional dual-frequency antenna to conform to the specification of the SAR value. However, as the transmission power of the conventional dual-frequency antenna is reduced, the communication quality of the electronic device is also affected. Therefore, how to balance the specification of SAR values and the communication quality of electronic devices has become an important issue in the design of electronic devices.

本發明提供一種電子裝置,將寄生元件中的第二寄生部設置在輻射元件與第一殼體之間,且輻射元件與寄生元件的共振路徑相互獨立。藉此,電子裝置將可在符合SAR值的規範下依舊保有良好的通訊品質。The present invention provides an electronic device in which a second parasitic portion in a parasitic element is disposed between a radiating element and a first housing, and a resonant path of the radiating element and the parasitic element is independent of each other. Thereby, the electronic device will still maintain good communication quality under the SAR compliance specification.

本發明的電子裝置,包括殼體結構、接地面與雙頻天線。殼體結構包括第一殼體,以形成電子裝置的側壁。接地面與雙頻天線設置在殼體結構內。雙頻天線包括輻射元件與寄生元件。輻射元件包括饋入點以及從饋入點延伸至接地面的共振路徑,且雙頻天線透過輻射元件操作在第一頻段。寄生元件包括第一寄生部與第二寄生部。第一寄生部電性連接在接地面與第二寄生部之間。第二寄生部位在第一殼體與輻射元件之間,並與輻射元件相隔一耦合間距。雙頻天線透過寄生元件操作在第二頻段,且第二頻段的中心頻率小於第一頻段的中心頻率。The electronic device of the present invention comprises a housing structure, a ground plane and a dual frequency antenna. The housing structure includes a first housing to form a sidewall of the electronic device. The ground plane and the dual frequency antenna are disposed within the housing structure. The dual frequency antenna includes a radiating element and a parasitic element. The radiating element includes a feed point and a resonant path extending from the feed point to the ground plane, and the dual frequency antenna is operated in the first frequency band by the radiating element. The parasitic element includes a first parasitic portion and a second parasitic portion. The first parasitic portion is electrically connected between the ground plane and the second parasitic portion. The second parasitic portion is between the first housing and the radiating element and is spaced apart from the radiating element by a coupling pitch. The dual frequency antenna operates in the second frequency band through the parasitic element, and the center frequency of the second frequency band is smaller than the center frequency of the first frequency band.

在本發明的一實施例中,上述的輻射元件包括第一輻射部、第二輻射部與第三輻射部。第一輻射部具有饋入點,並面對第一寄生部。第二輻射部電性連接第一輻射部,並與第二寄生部相隔所述耦合間距。第二寄生部位在第一殼體與第二輻射部之間。第三輻射部電性連接第二輻射部與接地面。第一輻射部位在第一寄生部與第三輻射部之間。In an embodiment of the invention, the radiating element includes a first radiating portion, a second radiating portion, and a third radiating portion. The first radiating portion has a feeding point and faces the first parasitic portion. The second radiating portion is electrically connected to the first radiating portion and spaced apart from the second parasitic portion by the coupling pitch. The second parasitic portion is between the first housing and the second radiating portion. The third radiating portion is electrically connected to the second radiating portion and the ground plane. The first radiation portion is between the first parasitic portion and the third radiation portion.

基於上述,本發明之電子裝置中的雙頻天線包括輻射元件與寄生元件,且輻射元件包括從饋入點延伸至接地面的共振路徑。此外,設置在第一殼體與輻射元件之間的第二寄生部,將可致使輻射元件較為遠離電子裝置的第一殼體。藉此,電子裝置無須降低雙頻天線的發射功率就可符合SAR值的規範。換言之,電子裝置可在符合SAR值的規範下依舊保有良好的通訊品質。Based on the above, the dual-frequency antenna in the electronic device of the present invention includes a radiating element and a parasitic element, and the radiating element includes a resonant path extending from the feeding point to the ground plane. Furthermore, the second parasitic portion disposed between the first housing and the radiating element will cause the radiating element to be relatively far from the first housing of the electronic device. Thereby, the electronic device can conform to the specification of the SAR value without lowering the transmission power of the dual-frequency antenna. In other words, the electronic device can still maintain good communication quality under the SAR compliance specification.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

圖1為依據本發明一實施例之電子裝置的示意圖。如圖1所示,電子裝置100包括殼體結構110、接地面120與雙頻天線130。其中,殼體結構110包括第一殼體111、第二殼體112與第三殼體113。雙頻天線130包括輻射元件131與寄生元件132。此外,輻射元件131包括第一輻射部141、第二輻射部142與第三輻射部143。寄生元件132包括第一寄生部151與第二寄生部152。1 is a schematic diagram of an electronic device in accordance with an embodiment of the present invention. As shown in FIG. 1 , the electronic device 100 includes a housing structure 110 , a ground plane 120 , and a dual frequency antenna 130 . The housing structure 110 includes a first housing 111, a second housing 112, and a third housing 113. The dual frequency antenna 130 includes a radiating element 131 and a parasitic element 132. Further, the radiating element 131 includes a first radiating portion 141, a second radiating portion 142, and a third radiating portion 143. The parasitic element 132 includes a first parasitic portion 151 and a second parasitic portion 152.

圖2為依據本發明一實施例之電子裝置的剖面示意圖,其中圖2以虛線標示出圖1之雙頻天線130的設置位置。如圖1與圖2所示,殼體結構110中的第一殼體111可用以形成電子裝置100的一側壁。亦即,第一殼體111可用以形成靠近電子裝置100之上半部的一短邊緣或是一長邊緣。此外,雙頻天線130設置在電子裝置100的上半部,並鄰近第一殼體111。2 is a cross-sectional view of an electronic device in accordance with an embodiment of the present invention, wherein FIG. 2 is a broken line showing the set position of the dual band antenna 130 of FIG. As shown in FIGS. 1 and 2, the first housing 111 in the housing structure 110 can be used to form a side wall of the electronic device 100. That is, the first housing 111 can be used to form a short edge or a long edge near the upper half of the electronic device 100. Further, the dual frequency antenna 130 is disposed in the upper half of the electronic device 100 and adjacent to the first housing 111.

具體而言,接地面120與雙頻天線130設置在殼體結構110內。雙頻天線130中的輻射元件131具有一饋入點FP1。此外,輻射元件131具有環形天線(loop antenna)結構。舉例來說,第一輻射部141、第二輻射部142與第三輻射部143相互串聯。此外,第一輻射部141具有饋入點FP1,且第三輻射部143電性連接至接地面120。藉此,輻射元件131將可形成從饋入點FP1延伸至接地面120的共振路徑。Specifically, the ground plane 120 and the dual frequency antenna 130 are disposed within the housing structure 110. The radiating element 131 in the dual frequency antenna 130 has a feed point FP1. Further, the radiating element 131 has a loop antenna structure. For example, the first radiating portion 141, the second radiating portion 142, and the third radiating portion 143 are connected in series with each other. Further, the first radiating portion 141 has a feeding point FP1, and the third radiating portion 143 is electrically connected to the ground plane 120. Thereby, the radiating element 131 will form a resonant path that extends from the feed point FP1 to the ground plane 120.

另一方面,寄生元件132從接地面120延伸而出,以形成另一共振路徑。其中,第一寄生部151電性連接在接地面120與第二寄生部152之間。第二寄生部152位在第一殼體111與輻射元件131之間,且第二寄生部152與輻射元件131相隔一耦合間距。從另一角度來看,第二寄生部152於第一殼體111的正投影與輻射元件131於第一殼體111的正投影部分重疊。此外,所述耦合間距可例如是介在0.2mm與3mm之間。On the other hand, the parasitic element 132 extends from the ground plane 120 to form another resonant path. The first parasitic portion 151 is electrically connected between the ground plane 120 and the second parasitic portion 152 . The second parasitic portion 152 is located between the first housing 111 and the radiating element 131, and the second parasitic portion 152 is spaced apart from the radiating element 131 by a coupling pitch. From another perspective, the orthographic projection of the second parasitic portion 152 at the first housing 111 overlaps the orthographic projection portion of the radiating element 131 at the first housing 111. Furthermore, the coupling pitch can be, for example, between 0.2 mm and 3 mm.

在操作上,電子裝置100中的收發器(未繪示出)可傳送一饋入訊號至雙頻天線130的饋入點FP1。在饋入訊號的激發下,輻射元件131可產生第一共振模態,進而致使雙頻天線130可透過輻射元件131操作在第一頻段。此外,饋入訊號可透過所述耦合間距從輻射元件131耦合至寄生元件132。藉此,寄生元件132將可產生第二共振模態,進而致使雙頻天線130可透過寄生元件132操作在第二頻段。此外,第二頻段的中心頻率小於第一頻段的中心頻率。亦即,第一頻段可例如是高頻頻段,且第二頻段可例如是低頻頻段。In operation, a transceiver (not shown) in the electronic device 100 can transmit a feed signal to the feed point FP1 of the dual frequency antenna 130. Under excitation of the feed signal, the radiating element 131 can generate a first resonant mode, thereby causing the dual frequency antenna 130 to operate in the first frequency band through the radiating element 131. Furthermore, the feed signal can be coupled from the radiating element 131 to the parasitic element 132 through the coupling pitch. Thereby, the parasitic element 132 will be able to generate a second resonant mode, which in turn causes the dual frequency antenna 130 to operate in the second frequency band through the parasitic element 132. In addition, the center frequency of the second frequency band is smaller than the center frequency of the first frequency band. That is, the first frequency band can be, for example, a high frequency band, and the second frequency band can be, for example, a low frequency band.

舉例來說,圖3為依據本發明一實施例之雙頻天線的返回損失曲線圖。如圖3所示,雙頻天線130可透過輻射元件131操作在第一頻段310,且第一頻段310可例如是5GHz頻段。再者,雙頻天線130可透過寄生元件132操作在第二頻段320,且第二頻段320可例如是2.4GHz頻段。換言之,在一實施例中,第一頻段310的中心頻率可例如是5GHz,且第二頻段320的中心頻率可例如是2.4GHz。For example, FIG. 3 is a graph of return loss of a dual band antenna according to an embodiment of the invention. As shown in FIG. 3, the dual band antenna 130 can operate in the first frequency band 310 through the radiating element 131, and the first frequency band 310 can be, for example, a 5 GHz band. Moreover, dual frequency antenna 130 can operate in second frequency band 320 through parasitic element 132, and second frequency band 320 can be, for example, a 2.4 GHz frequency band. In other words, in an embodiment, the center frequency of the first frequency band 310 can be, for example, 5 GHz, and the center frequency of the second frequency band 320 can be, for example, 2.4 GHz.

值得一提的是,如圖2所示,在SAR值的量測上,測試裝置(未繪示出)會以電子裝置100之側壁(亦即,第一殼體111)的最高點來設立一基準線230,並以基準線230為基準來進行SAR值的量測。此外,就具有PIFA架構的傳統雙頻天線而言,當電子裝置不降低傳統雙頻天線的發射功率,而直接透過傳統雙頻天線操作在高頻頻段(例如,5GHz頻段)時,以基準線230為基準所量測出的SAR值往往過高而無法符合測試規範。It is worth mentioning that, as shown in FIG. 2, in the measurement of the SAR value, the test device (not shown) is set up at the highest point of the side wall of the electronic device 100 (that is, the first casing 111). A reference line 230 is used to measure the SAR value based on the reference line 230. In addition, in the case of a conventional dual-band antenna having a PIFA architecture, when the electronic device does not lower the transmission power of the conventional dual-band antenna, and operates directly in the high-frequency band (for example, the 5 GHz band) through the conventional dual-band antenna, the reference line The SAR value measured by 230 for the benchmark is often too high to meet the test specifications.

另一方面,就圖1的雙頻天線130而言,可用以操作在高頻頻段(亦即,第一頻段)的輻射元件131是隔著第二寄生部152面對電子裝置100的側壁(亦即,第一殼體111)。換言之,設置在第一殼體111與輻射元件131之間的第二寄生部152,將可致使輻射元件131更為遠離電子裝置100的側壁。亦即,寄生元件132的設置結構,將可致使輻射元件131更為遠離電子裝置100在測試上的基準線230。On the other hand, with the dual-band antenna 130 of FIG. 1, the radiating element 131 operable to operate in the high frequency band (ie, the first frequency band) faces the side wall of the electronic device 100 via the second parasitic portion 152 ( That is, the first housing 111). In other words, the second parasitic portion 152 disposed between the first housing 111 and the radiating element 131 will cause the radiating element 131 to be further away from the sidewall of the electronic device 100. That is, the arrangement of the parasitic element 132 will cause the radiating element 131 to be further away from the reference line 230 of the electronic device 100 on the test.

此外,具有環形天線結構的輻射元件131具有較小的特定吸收率。寄生元件132的共振路徑與輻射元件131的共振路徑相互獨立,進而可降低兩者之間的相互影響。因此,當電子裝置100透過雙頻天線130操作在高頻頻段(亦即,第一頻段)時,電子裝置100無須降低雙頻天線130的發射功率,所量測到的SAR值即可符合測試規範。藉此,電子裝置100將可在符合SAR值的規範下依舊保有良好的通訊品質。Further, the radiating element 131 having the loop antenna structure has a small specific absorption rate. The resonant path of the parasitic element 132 is independent of the resonant path of the radiating element 131, thereby reducing the mutual influence between the two. Therefore, when the electronic device 100 operates in the high frequency band (ie, the first frequency band) through the dual frequency antenna 130, the electronic device 100 does not need to reduce the transmission power of the dual frequency antenna 130, and the measured SAR value can conform to the test. specification. Thereby, the electronic device 100 can still maintain good communication quality under the SAR compliance specification.

舉例來說,圖4為依據本發明一實施例的天線效率圖,其中曲線410用以表示雙頻天線130的天線效率,且曲線420用以表示具有PIFA架構之傳統雙頻天線的天線效率。如圖4所示,在5GHz頻段(亦即,第一頻段)下,雙頻天線130的天線效率近似於傳統雙頻天線的天線效率。此外,針對傳統雙頻天線而言,倘若電子裝置不降低傳統雙頻天線的發射功率,則在5180MHz、5500MHz與5805MHz下,所量測到的SAR值分別為1.11W/kg(1克)、1.18W/kg(1克)與0.971W/kg(1克)。For example, FIG. 4 is an antenna efficiency diagram in accordance with an embodiment of the present invention, wherein curve 410 is used to represent the antenna efficiency of dual-band antenna 130, and curve 420 is used to represent the antenna efficiency of a conventional dual-band antenna having a PIFA architecture. As shown in FIG. 4, in the 5 GHz band (ie, the first band), the antenna efficiency of the dual band antenna 130 is similar to that of the conventional dual band antenna. In addition, for the traditional dual-band antenna, if the electronic device does not reduce the transmission power of the conventional dual-frequency antenna, the measured SAR values are 1.11 W/kg (1 g) at 5180 MHz, 5500 MHz, and 5805 MHz, respectively. 1.18 W/kg (1 g) and 0.971 W/kg (1 g).

另一方面,對於雙頻天線130而言,在不降低雙頻天線130之發射功率的情況下,則在5180MHz、5500MHz與5805MHz下,所量測到的SAR值分別為0.267W/kg(1克)、0.334W/kg(1克)與0.177W/kg(1克)。換言之,與具有PIFA架構的傳統雙頻天線相較之下,電子裝置100無須降低雙頻天線130的發射功率,所量測到的SAR值即可符合測試規範。On the other hand, for the dual-frequency antenna 130, the measured SAR values are 0.267 W/kg at 5180 MHz, 5500 MHz, and 5805 MHz, respectively, without reducing the transmission power of the dual-frequency antenna 130. g), 0.334 W/kg (1 g) and 0.177 W/kg (1 g). In other words, compared with the conventional dual-band antenna with the PIFA architecture, the electronic device 100 does not need to reduce the transmission power of the dual-frequency antenna 130, and the measured SAR value can meet the test specifications.

請繼續參照圖1。就雙頻天線130而言,第一輻射部141面對第一寄生部151。第二輻射部142電性連接第一輻射部141,並與第二寄生部152相隔所述耦合間距。第三輻射部143電性連接第二輻射部142與接地面120。此外,第一輻射部141位在第一寄生部151與第三輻射部143之間,且第二寄生部152位在第一殼體111與第二輻射部142之間。Please continue to refer to Figure 1. In the case of the dual-frequency antenna 130, the first radiating portion 141 faces the first parasitic portion 151. The second radiating portion 142 is electrically connected to the first radiating portion 141 and spaced apart from the second parasitic portion 152 by the coupling pitch. The third radiating portion 143 is electrically connected to the second radiating portion 142 and the ground plane 120. Further, the first radiating portion 141 is positioned between the first parasitic portion 151 and the third radiating portion 143, and the second parasitic portion 152 is positioned between the first housing 111 and the second radiating portion 142.

在一實施例中,第二輻射部142與第二寄生部152相互平行。第一輻射部141、第三輻射部143與第一寄生部151相互平行。此外,第一寄生部151與第二寄生部152相互垂直。換言之,寄生元件132的形狀可例如是倒L形。再者,輻射元件131的長度,亦即輻射元件131所形成之共振路徑的長度,為第一頻段之最低頻率的1/2波長。此外,寄生元件132的長度,亦即寄生元件132所形成之共振路徑的長度,為第二頻段之最低頻率的1/4波長。In an embodiment, the second radiating portion 142 and the second parasitic portion 152 are parallel to each other. The first radiating portion 141, the third radiating portion 143, and the first parasitic portion 151 are parallel to each other. Further, the first parasitic portion 151 and the second parasitic portion 152 are perpendicular to each other. In other words, the shape of the parasitic element 132 can be, for example, an inverted L shape. Furthermore, the length of the radiating element 131, that is, the length of the resonant path formed by the radiating element 131, is 1/2 wavelength of the lowest frequency of the first frequency band. Further, the length of the parasitic element 132, that is, the length of the resonant path formed by the parasitic element 132, is 1/4 wavelength of the lowest frequency of the second frequency band.

請繼續參照圖2,電子裝置100更包括一顯示面板210,且顯示面板210固設在電子裝置100的正面220。此外,第二殼體112銜接在第一殼體111與第三殼體113。雙頻天線130設置在第一殼體111與第二殼體112內,且接地面120設置在第三殼體113內。值得注意的是,第一殼體111與第二殼體112為非導電材質,以形成雙頻天線130的淨空區域。第三殼體113則可例如是非導電材質或是金屬材質。此外,在一實施例中,接地面120可例如是貼附在第三殼體113或是顯示面板210上。在另一實施例中,接地面120與雙頻天線130也可例如是設置在電子裝置100中的一基板(未繪示出)上。Referring to FIG. 2 , the electronic device 100 further includes a display panel 210 , and the display panel 210 is fixed on the front surface 220 of the electronic device 100 . In addition, the second housing 112 is coupled to the first housing 111 and the third housing 113. The dual frequency antenna 130 is disposed in the first housing 111 and the second housing 112, and the ground plane 120 is disposed in the third housing 113. It should be noted that the first housing 111 and the second housing 112 are non-conductive materials to form a clearance area of the dual-frequency antenna 130. The third housing 113 can be, for example, a non-conductive material or a metal material. Moreover, in an embodiment, the ground plane 120 can be attached to the third housing 113 or the display panel 210, for example. In another embodiment, the ground plane 120 and the dual-band antenna 130 may also be disposed on a substrate (not shown) in the electronic device 100, for example.

綜上所述,本發明之電子裝置包括雙頻天線。此外,雙頻天線中的輻射元件具有較小的特定吸收率,且寄生元件的設置結構將可致使輻射元件遠離電子裝置的第一殼體。再者,輻射元件與寄生元件的共振路徑相互獨立。藉此,電子裝置無須降低雙頻天線的發射功率,所量測到的SAR值即可符合測試規範。換言之,電子裝置可在符合SAR值的規範下依舊保有良好的通訊品質。In summary, the electronic device of the present invention includes a dual frequency antenna. Furthermore, the radiating element in the dual band antenna has a small specific absorption rate, and the arrangement of the parasitic element will cause the radiating element to move away from the first housing of the electronic device. Furthermore, the resonant paths of the radiating elements and the parasitic elements are independent of one another. Thereby, the electronic device does not need to reduce the transmission power of the dual-frequency antenna, and the measured SAR value can meet the test specification. In other words, the electronic device can still maintain good communication quality under the SAR compliance specification.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧電子裝置
110‧‧‧殼體結構
120‧‧‧接地面
130‧‧‧雙頻天線
111‧‧‧第一殼體
112‧‧‧第二殼體
113‧‧‧第三殼體
131‧‧‧輻射元件
132‧‧‧寄生元件
141‧‧‧第一輻射部
142‧‧‧第二輻射部
143‧‧‧第三輻射部
151‧‧‧第一寄生部
152‧‧‧第二寄生部
FP1‧‧‧饋入點
210‧‧‧顯示面板
220‧‧‧正面
230‧‧‧基準線
310‧‧‧第一頻段
320‧‧‧第二頻段
410、420‧‧‧曲線
100‧‧‧Electronic devices
110‧‧‧Shell structure
120‧‧‧ ground plane
130‧‧‧Double frequency antenna
111‧‧‧First housing
112‧‧‧Second housing
113‧‧‧ third housing
131‧‧‧radiation components
132‧‧‧ Parasitic components
141‧‧‧First Radiation Department
142‧‧‧Second Radiation Department
143‧‧ Third Radiation Department
151‧‧‧The first parasitic part
152‧‧‧Second parasitic
FP1‧‧‧Feeding point
210‧‧‧ display panel
220‧‧‧ positive
230‧‧‧ baseline
310‧‧‧First frequency band
320‧‧‧second frequency band
410, 420‧‧‧ curve

圖1為依據本發明一實施例之電子裝置的示意圖。 圖2為依據本發明一實施例之電子裝置的剖面示意圖。 圖3為依據本發明一實施例之雙頻天線的返回損失曲線圖。 圖4為依據本發明一實施例的天線效率圖。1 is a schematic diagram of an electronic device in accordance with an embodiment of the present invention. 2 is a cross-sectional view of an electronic device in accordance with an embodiment of the present invention. 3 is a graph showing a return loss of a dual band antenna according to an embodiment of the invention. 4 is a diagram showing an antenna efficiency diagram in accordance with an embodiment of the present invention.

100‧‧‧電子裝置 100‧‧‧Electronic devices

110‧‧‧殼體結構 110‧‧‧Shell structure

120‧‧‧接地面 120‧‧‧ ground plane

130‧‧‧雙頻天線 130‧‧‧Double frequency antenna

111‧‧‧第一殼體 111‧‧‧First housing

112‧‧‧第二殼體 112‧‧‧Second housing

113‧‧‧第三殼體 113‧‧‧ third housing

131‧‧‧輻射元件 131‧‧‧radiation components

132‧‧‧寄生元件 132‧‧‧ Parasitic components

141‧‧‧第一輻射部 141‧‧‧First Radiation Department

142‧‧‧第二輻射部 142‧‧‧Second Radiation Department

143‧‧‧第三輻射部 143‧‧ Third Radiation Department

151‧‧‧第一寄生部 151‧‧‧The first parasitic part

152‧‧‧第二寄生部 152‧‧‧Second parasitic

FP1‧‧‧饋入點 FP1‧‧‧Feeding point

Claims (10)

一種電子裝置,包括: 一殼體結構,包括一第一殼體,以形成該電子裝置的一側壁; 一接地面,設置在該殼體結構內;以及 一雙頻天線,設置在該殼體結構內,並包括: 一輻射元件,包括一饋入點以及從該饋入點延伸至該接地面的一共振路徑,且該雙頻天線透過該輻射元件操作在一第一頻段;以及 一寄生元件,包括一第一寄生部與一第二寄生部,其中該第一寄生部電性連接在該接地面與該第二寄生部之間,該第二寄生部位在該第一殼體與該輻射元件之間,並與該輻射元件相隔一耦合間距,該雙頻天線透過該寄生元件操作在一第二頻段,且該第二頻段的中心頻率小於該第一頻段的中心頻率。An electronic device comprising: a housing structure including a first housing to form a sidewall of the electronic device; a ground plane disposed within the housing structure; and a dual frequency antenna disposed in the housing Within the structure, and comprising: a radiating element comprising a feed point and a resonant path extending from the feed point to the ground plane, and the dual frequency antenna is operated in the first frequency band through the radiating element; and a parasitic The component includes a first parasitic portion and a second parasitic portion, wherein the first parasitic portion is electrically connected between the ground surface and the second parasitic portion, and the second parasitic portion is in the first housing and the A radiating element is spaced apart from the radiating element by a coupling pitch. The dual-frequency antenna operates in a second frequency band through the parasitic element, and a center frequency of the second frequency band is smaller than a center frequency of the first frequency band. 如申請專利範圍第1項所述的電子裝置,其中該輻射元件具有一環形天線結構。The electronic device of claim 1, wherein the radiating element has a loop antenna structure. 如申請專利範圍第2項所述的電子裝置,其中該寄生元件的長度為該第二頻段之最低頻率的1/4波長。The electronic device of claim 2, wherein the length of the parasitic element is 1/4 wavelength of the lowest frequency of the second frequency band. 如申請專利範圍第3項所述的電子裝置,其中該寄生元件的形狀為倒L形。The electronic device of claim 3, wherein the parasitic element has an inverted L shape. 如申請專利範圍第1項所述的電子裝置,其中該輻射元件包括: 一第一輻射部,具有該饋入點,並面對該第一寄生部; 一第二輻射部,電性連接該第一輻射部,並與該第二寄生部相隔該耦合間距,且該第二寄生部位在該第一殼體與該第二輻射部之間;以及 一第三輻射部,電性連接該第二輻射部與該接地面,且該第一輻射部位在該第一寄生部與該第三輻射部之間。The electronic device of claim 1, wherein the radiating element comprises: a first radiating portion having the feeding point facing the first parasitic portion; and a second radiating portion electrically connected to the a first radiating portion separated from the second parasitic portion by the coupling pitch, and the second parasitic portion is between the first housing and the second radiating portion; and a third radiating portion electrically connected to the first portion a second radiating portion and the grounding surface, and the first radiating portion is between the first parasitic portion and the third radiating portion. 如申請專利範圍第5項所述的電子裝置,其中該第二輻射部與該第二寄生部相互平行,且該第一輻射部、該第三輻射部與該第一寄生部相互平行。The electronic device of claim 5, wherein the second radiating portion and the second parasitic portion are parallel to each other, and the first radiating portion, the third radiating portion and the first parasitic portion are parallel to each other. 如申請專利範圍第6項所述的電子裝置,其中該第一寄生部與該第二寄生部相互垂直。The electronic device of claim 6, wherein the first parasitic portion and the second parasitic portion are perpendicular to each other. 如申請專利範圍第1項所述的電子裝置,其中該殼體結構更包括一第二殼體與一第三殼體,該第二殼體銜接在該第一殼體與該第三殼體,該雙頻天線設置在該第一殼體與該第二殼體內,且該第一殼體與該第二殼體為非導電材質。The electronic device of claim 1, wherein the housing structure further comprises a second housing and a third housing, the second housing being coupled to the first housing and the third housing The dual frequency antenna is disposed in the first housing and the second housing, and the first housing and the second housing are non-conductive materials. 如申請專利範圍第8項所述的電子裝置,其中該第三殼體為非導電材質或是金屬材質,且該接地面設置在該第三殼體內。The electronic device of claim 8, wherein the third housing is made of a non-conductive material or a metal material, and the grounding surface is disposed in the third housing. 如申請專利範圍第1項所述的電子裝置,其中該第一頻段的中心頻率為5GHz,且該第二頻段的中心頻率為2.4GHz。The electronic device of claim 1, wherein the first frequency band has a center frequency of 5 GHz and the second frequency band has a center frequency of 2.4 GHz.
TW104143654A 2015-12-24 2015-12-24 Electronic device TW201724646A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114552177A (en) * 2020-11-24 2022-05-27 和硕联合科技股份有限公司 Electronic device
TWI829203B (en) * 2022-06-20 2024-01-11 安諾電子股份有限公司 Overlapping multi-element coupled antenna

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114552177A (en) * 2020-11-24 2022-05-27 和硕联合科技股份有限公司 Electronic device
US11871507B2 (en) 2020-11-24 2024-01-09 Pegatron Corporation Electronic device
TWI829203B (en) * 2022-06-20 2024-01-11 安諾電子股份有限公司 Overlapping multi-element coupled antenna

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