TW201713595A - Roll to roll continuously fabricating method and fabricating apparatus for graphene film - Google Patents

Roll to roll continuously fabricating method and fabricating apparatus for graphene film Download PDF

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TW201713595A
TW201713595A TW104133336A TW104133336A TW201713595A TW 201713595 A TW201713595 A TW 201713595A TW 104133336 A TW104133336 A TW 104133336A TW 104133336 A TW104133336 A TW 104133336A TW 201713595 A TW201713595 A TW 201713595A
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roll
graphene film
support material
high temperature
temperature resistant
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TW104133336A
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黃導陽
謝詠如
林建宏
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勤友光電股份有限公司
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Publication of TW201713595A publication Critical patent/TW201713595A/en

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Abstract

A roll to roll continuously fabricating method and fabricating apparatus for graphene film are provided. The roll to roll continuously fabricating apparatus for graphene film includes a supporting material provider, a catalyst forming chamber, a deposition chamber and a first roller. The supporting material provider is configured to accommodate a roll of heat resistant supporting material. The catalyst forming chamber is configured to form a catalyst layer on the heat resistant supporting material continuously provided from the supporting material provider. The deposition chamber is configured to form a graphene film on the catalyst layer. The first roller is configured to rewind the heat resistant supporting material with the graphene film formed thereon.

Description

石墨烯膜的捲對捲連續製作方法與製作設備Roll-to-roll continuous manufacturing method and production equipment of graphene film

本發明是有關於一種捲對捲連續製作方法與製作設備,且特別是有關於一種石墨烯膜的捲對捲連續製作方法與製作設備。The present invention relates to a roll-to-roll continuous manufacturing method and manufacturing apparatus, and more particularly to a roll-to-roll continuous manufacturing method and manufacturing apparatus for a graphene film.

石墨烯的結構穩定且只有一個碳原子的厚度,是目前最薄卻最堅硬的二維奈米材料。石墨烯幾乎完全透明,只吸收2.3%的光。石墨烯的導熱係數(5,300 W/m·K)高於奈米碳管(CNT)和金剛石。常溫下石墨烯的電子遷移率(15,000 cm2 /V·s)比奈米碳管或矽晶體高,而電阻率比銅或銀更低,約只有10-6 Ω·cm,為目前電阻率最小的材料,且可撓性高而反射率低,因此是做為透明觸控元件、太陽能電池等軟性電子材料的首選。Graphene is structurally stable and has only one carbon atom thickness. It is the thinnest but hardest two-dimensional nanomaterial. Graphene is almost completely transparent and absorbs only 2.3% of light. The thermal conductivity of graphene (5,300 W/m·K) is higher than that of carbon nanotubes (CNT) and diamond. The electron mobility of graphene at room temperature (15,000 cm 2 /V·s) is higher than that of carbon nanotubes or germanium crystals, and the resistivity is lower than that of copper or silver, which is only about 10 -6 Ω·cm, which is the lowest resistivity at present. The material is highly flexible and has low reflectivity, so it is the first choice for soft electronic materials such as transparent touch elements and solar cells.

製備石墨烯膜的技術包含機械剝離法(Mechanical Exfoliation)、磊晶成長法(Epitaxial Growth)、化學氣相沉積法(Chemical Vapor Deposition, CVD)及氧化減薄石墨烯化學還原法(Reduction from Graphene Oxides)等方法。機械剝離法及磊晶成長法可以生成品質較佳之石墨烯膜,但無法大面積合成石墨烯膜。氧化減薄石墨烯化學還原法主要是先將石墨氧化再高溫還原恢復其導電性,但並非所有的氧化石墨烯均能被有效地還原,因此品質較差。化學氣相沉積法可在過渡金屬表面生成大面積石墨烯膜。但是,目前支撐材的材料為PET或銅箔,都不耐化學氣相沉積製程的高溫,因此受限於支撐材的的面積而僅能產生小片的石墨烯膜。Techniques for preparing graphene films include Mechanical Exfoliation, Epitaxial Growth, Chemical Vapor Deposition (CVD), and Reduction from Graphene Oxides. ) and other methods. The mechanical peeling method and the epitaxial growth method can produce a graphene film of a better quality, but it is not possible to synthesize a graphene film over a large area. The oxidation reduction and thinning graphene chemical reduction method mainly first oxidizes graphite and then restores its conductivity by high temperature reduction, but not all of the graphene oxide can be effectively reduced, so the quality is poor. Chemical vapor deposition produces a large area of graphene film on the surface of the transition metal. However, the material of the support material is PET or copper foil, which is not resistant to the high temperature of the chemical vapor deposition process, and thus is limited to the area of the support material and can only produce a small piece of graphene film.

本發明提供一種石墨烯膜的捲對捲連續製作方法與製作設備,可解決習知技術中所生產的石墨烯膜的面積太小問題。The invention provides a roll-to-roll continuous manufacturing method and manufacturing device of a graphene film, which can solve the problem that the area of the graphene film produced in the prior art is too small.

本發明的石墨烯膜的捲對捲連續製作方法包括下列步驟。從一捲耐高溫支撐材連續通過一催化劑形成腔,以於耐高溫支撐材上形成一催化劑層。使形成有催化劑層的耐高溫支撐材通過一沉積腔,以於催化劑層上形成一石墨烯膜。The roll-to-roll continuous production method of the graphene film of the present invention comprises the following steps. A catalyst is formed on the high temperature resistant support material by continuously forming a cavity from a high temperature resistant support material through a catalyst. The high temperature resistant support material formed with the catalyst layer is passed through a deposition chamber to form a graphene film on the catalyst layer.

在本發明的一實施例中,石墨烯膜的捲對捲連續製作方法更包括,在形成石墨烯膜後將石墨烯膜自耐高溫支撐材分離,並回收耐高溫支撐材成一捲。In an embodiment of the present invention, the roll-to-roll continuous production method of the graphene film further comprises: separating the graphene film from the high temperature resistant support material after forming the graphene film, and recovering the high temperature resistant support material into a roll.

在本發明的一實施例中,將石墨烯膜自耐高溫支撐材分離的方法包括下列步驟。在石墨烯膜上貼合一貼合膜。移除催化劑層,以使石墨烯膜與耐高溫支撐材分離而移轉至貼合膜。In an embodiment of the invention, the method of separating the graphene film from the high temperature resistant support comprises the following steps. A laminated film is attached to the graphene film. The catalyst layer is removed to separate the graphene film from the high temperature resistant support material and transfer to the bonded film.

在本發明的一實施例中,在沉積腔形成石墨烯膜的方法包括進行化學氣相沉積製程。In an embodiment of the invention, a method of forming a graphene film in a deposition chamber includes performing a chemical vapor deposition process.

在本發明的一實施例中,耐高溫支撐材為鈦箔。In an embodiment of the invention, the high temperature resistant support material is a titanium foil.

在本發明的一實施例中,耐高溫支撐材耐1300°C以上。In an embodiment of the invention, the high temperature resistant support material is resistant to 1300 ° C or higher.

在本發明的一實施例中,催化劑層的材料為銅、鎳或銅鎳合金。In an embodiment of the invention, the material of the catalyst layer is copper, nickel or a copper-nickel alloy.

本發明的石墨烯膜的捲對捲連續製作設備包括一支撐材提供單元、一催化劑形成腔、一沉積腔以及一第一收捲單元。支撐材提供單元用以容置一捲耐高溫支撐材。催化劑形成腔用以在支撐材提供單元連續提供的耐高溫支撐材上形成一催化劑層。沉積腔用以在催化劑層上形成一石墨烯膜。第一收捲單元用以收捲形成有石墨烯膜的耐高溫支撐材。The roll-to-roll continuous production apparatus of the graphene film of the present invention comprises a support material supply unit, a catalyst forming chamber, a deposition chamber and a first winding unit. The support material supply unit is for accommodating a roll of high temperature resistant support material. The catalyst forming chamber is for forming a catalyst layer on the high temperature resistant support material continuously provided by the support material supply unit. The deposition chamber is used to form a graphene film on the catalyst layer. The first winding unit is configured to wind up a high temperature resistant support material formed with a graphene film.

在本發明的一實施例中,沉積腔為高溫化學氣相沉積腔。In an embodiment of the invention, the deposition chamber is a high temperature chemical vapor deposition chamber.

在本發明的一實施例中,石墨烯膜的捲對捲連續製作設備更包括一捲對捲貼合單元,用以在石墨烯膜上貼合一貼合膜。In an embodiment of the invention, the roll-to-roll continuous manufacturing apparatus of the graphene film further comprises a roll-to-roll bonding unit for attaching a bonding film on the graphene film.

在本發明的一實施例中,石墨烯膜的捲對捲連續製作設備更包括一蝕刻單元,用以蝕刻移除催化劑層,以使石墨烯膜與耐高溫支撐材分離而移轉至貼合膜。In an embodiment of the present invention, the roll-to-roll continuous manufacturing apparatus of the graphene film further includes an etching unit for etching and removing the catalyst layer to separate the graphene film from the high temperature resistant support material and shifting to the bonding. membrane.

在本發明的一實施例中,石墨烯膜的捲對捲連續製作設備更包括一第二收捲單元,用以收捲與石墨烯膜分離後的耐高溫支撐材。In an embodiment of the invention, the roll-to-roll continuous manufacturing apparatus of the graphene film further includes a second winding unit for winding the high temperature resistant support material separated from the graphene film.

基於上述,在本發明的石墨烯膜的捲對捲連續製作方法與製作設備中,使用耐高溫支撐材與捲對捲連續製程,因此可製作大面積的石墨烯膜且產率提升。Based on the above, in the roll-to-roll continuous production method and manufacturing apparatus of the graphene film of the present invention, a high-temperature resistant support material and a roll-to-roll continuous process are used, so that a large-area graphene film can be produced and the yield is improved.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

圖1是本發明一實施例的石墨烯膜的捲對捲連續製作設備的示意圖。請參照圖1,本實施例的石墨烯膜的捲對捲連續製作設備100包括一支撐材提供單元110、一催化劑形成腔120、一沉積腔130以及一第一收捲單元140。支撐材提供單元110用以容置一捲耐高溫支撐材10。催化劑形成腔120用以在支撐材提供單元110連續提供的耐高溫支撐材10上形成一催化劑層20。沉積腔130用以在催化劑層20上形成一石墨烯膜30。第一收捲單元140用以收捲形成有石墨烯膜30的耐高溫支撐材10。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a roll-to-roll continuous production apparatus of a graphene film according to an embodiment of the present invention. Referring to FIG. 1 , the roll-to-roll continuous manufacturing apparatus 100 of the graphene film of the present embodiment includes a support material supply unit 110 , a catalyst forming cavity 120 , a deposition chamber 130 , and a first winding unit 140 . The support material supply unit 110 is for accommodating a roll of the high temperature resistant support material 10. The catalyst forming chamber 120 is for forming a catalyst layer 20 on the high temperature resistant support material 10 continuously provided by the support material supply unit 110. The deposition chamber 130 is used to form a graphene film 30 on the catalyst layer 20. The first winding unit 140 is configured to wind up the high temperature resistant support material 10 on which the graphene film 30 is formed.

耐高溫支撐材10可從支撐材提供單元110開始,從捲成一捲的狀態被拉開。利用第一收捲單元140對耐高溫支撐材10的拉動,耐高溫支撐材10連續地通過催化劑形成腔120與沉積腔130,並於耐高溫支撐材10上依序形成催化劑層20與石墨烯膜30。最後,第一收捲單元140將耐高溫支撐材10連同其上面的催化劑層20與石墨烯膜30收成一捲,以便於儲存以及運送。在本實施例的石墨烯膜的捲對捲連續製作設備100,支撐材提供單元110提供耐高溫支撐材10,因此可以連續地通過沉積腔130而形成大面積的石墨烯膜30,不會有不耐高溫沉積製程的問題。另外,由於本實施例的石墨烯膜的捲對捲連續製作設備100提供了耐高溫支撐材10捲對捲的傳送機制,因此大幅縮短了石墨烯膜30的製程時間而提高了產量。The high temperature resistant support member 10 can be pulled from the support material supply unit 110 and pulled out from the state of being wound into a roll. The high temperature resistant support material 10 is continuously pulled through the catalyst forming cavity 120 and the deposition cavity 130 by the first winding unit 140, and the catalyst layer 20 and the graphene are sequentially formed on the high temperature resistant support material 10. Membrane 30. Finally, the first winding unit 140 collects the high temperature resistant support material 10 together with the catalyst layer 20 and the graphene film 30 thereon in a roll for storage and transportation. In the roll-to-roll continuous production apparatus 100 of the graphene film of the present embodiment, the support material supply unit 110 provides the high-temperature resistant support material 10, so that the large-area graphene film 30 can be formed continuously through the deposition chamber 130, and there is no Not resistant to high temperature deposition processes. In addition, since the roll-to-roll continuous production apparatus 100 of the graphene film of the present embodiment provides a roll-to-roll transfer mechanism of the high-temperature resistant support material 10, the process time of the graphene film 30 is greatly shortened and the yield is improved.

圖2是本發明另一實施例的石墨烯膜的捲對捲連續製作設備的示意圖。請參照圖2,本實施例的石墨烯膜的捲對捲連續製作設備200與圖1的捲對捲連續製作設備100相比,多了許多可選擇性採用的製程單元,捲對捲連續製作設備100也可選擇性地搭配這些製程單元中的一部分,本發明不對此限制。本實施例的石墨烯膜的捲對捲連續製作設備200包括一支撐材提供單元210、一催化劑形成腔220、一沉積腔230、一冷卻滾輪250、一第一收捲單元240、一捲對捲貼合單元260、一蝕刻單元270與一第二收捲單元280。2 is a schematic view of a roll-to-roll continuous production apparatus of a graphene film according to another embodiment of the present invention. Referring to FIG. 2, the roll-to-roll continuous manufacturing apparatus 200 of the graphene film of the present embodiment has a plurality of selectively selectable process units compared to the roll-to-roll continuous production apparatus 100 of FIG. The device 100 can also selectively mate with some of these process units, and the invention is not limited thereto. The roll-to-roll continuous manufacturing apparatus 200 of the graphene film of the present embodiment includes a support material supply unit 210, a catalyst forming chamber 220, a deposition chamber 230, a cooling roller 250, a first winding unit 240, and a roll pair. The roll bonding unit 260, an etching unit 270 and a second winding unit 280.

在此,藉由捲對捲連續製作設備200說明本發明一實施例的石墨烯膜的捲對捲連續製作方法,但捲對捲連續製作設備200並不限定僅能執行此石墨烯膜的捲對捲連續製作方法,而本實施例的石墨烯膜的捲對捲連續製作方法也不限定於僅能在捲對捲連續製作設備200上進行。本實施例的石墨烯膜的捲對捲連續製作方法至少包括下列步驟。首先,從一捲耐高溫支撐材10連續地拉出一耐高溫支撐材10並通過一催化劑形成腔220,以於耐高溫支撐材10上形成一催化劑層20。接著,使形成有催化劑層20的耐高溫支撐材10通過一沉積腔230,以於催化劑層20上形成一石墨烯膜30。最後,將石墨烯膜30自耐高溫支撐材10分離,並回收耐高溫支撐材10成一捲。Here, the roll-to-roll continuous production method of the graphene film according to an embodiment of the present invention is described by the roll-to-roll continuous production apparatus 200, but the roll-to-roll continuous production apparatus 200 is not limited to a roll capable of performing only the graphene film. The roll-to-roll continuous production method of the graphene film of the present embodiment is not limited to being performed only on the roll-to-roll continuous production apparatus 200. The roll-to-roll continuous production method of the graphene film of the present embodiment includes at least the following steps. First, a high temperature resistant support material 10 is continuously drawn from a roll of high temperature resistant support material 10 and a cavity 220 is formed through a catalyst to form a catalyst layer 20 on the high temperature resistant support material 10. Next, the high temperature resistant support material 10 on which the catalyst layer 20 is formed is passed through a deposition chamber 230 to form a graphene film 30 on the catalyst layer 20. Finally, the graphene film 30 is separated from the high temperature resistant support material 10, and the high temperature resistant support material 10 is recovered into a roll.

在本實施例的石墨烯膜的捲對捲連續製作方法中,採用了耐高溫支撐材10,因此可承受沉積石墨烯膜30時的高溫,有利於增加石墨烯膜30的面積。此外,耐高溫支撐材10從製程開始就是成捲的狀態,最後還是成捲的狀態,亦即本方法採用了捲對捲的製程方法,製程時間短且產量高。另外,耐高溫支撐材10最後還可回收使用,有助於降低製程成本。In the roll-to-roll continuous production method of the graphene film of the present embodiment, the high-temperature resistant support member 10 is used, so that the high temperature at the time of depositing the graphene film 30 can be withstood, which is advantageous for increasing the area of the graphene film 30. In addition, the high-temperature resistant support material 10 is in a state of being wound from the beginning of the process, and finally is in a state of being wound, that is, the method adopts a roll-to-roll process, and the process time is short and the output is high. In addition, the high temperature resistant support material 10 can be recycled at the end, which helps to reduce the process cost.

以下,在介紹捲對捲連續製作設備200時,一併說明本發明的石墨烯膜的捲對捲連續製作方法的其他選擇性步驟與步驟的細節。Hereinafter, in the description of the roll-to-roll continuous production apparatus 200, details of other optional steps and steps of the roll-to-roll continuous production method of the graphene film of the present invention will be described.

本實施例中,催化劑形成腔220區分為一清潔腔222與三個濺鍍腔224,但濺鍍腔224的數量也可以是更多或更少。支撐材提供單元210連續提供的耐高溫支撐材10依序通過清潔腔222與三個濺鍍腔224。清潔腔222具有一離子源222A,用以提供離子轟擊耐高溫支撐材10。濺鍍腔224具有一靶材架224A,用以放置一催化劑靶材20A。耐高溫支撐材10在形成催化劑層20前先進行清潔,可提高製程良率。清潔的方式例如是以離子源222A提供的離子在真空高溫的環境下轟擊耐高溫支撐材10。藉此,也可提高耐高溫支撐材10回收再利用的可能性。本實施例的催化劑靶材20A的材質例如是銅。本實施例中形成催化劑層20的方式是在真空高溫的環境下進行濺鍍製程,但本發明不侷限於此。本實施例的催化劑形成腔220內還配置一加熱滾輪226。支撐材提供單元210連續提供的耐高溫支撐材10是在依附於加熱滾輪226的表面的狀態下依序通過清潔腔222與濺鍍腔224,如此可提高形成催化劑層20的良率。In this embodiment, the catalyst forming chamber 220 is divided into a cleaning chamber 222 and three sputtering chambers 224, but the number of sputtering chambers 224 may be more or less. The high temperature resistant support material 10 continuously provided by the support material supply unit 210 sequentially passes through the cleaning chamber 222 and the three sputtering chambers 224. The cleaning chamber 222 has an ion source 222A for providing ion bombardment of the high temperature resistant support material 10. The sputtering chamber 224 has a target holder 224A for placing a catalyst target 20A. The high temperature resistant support material 10 is cleaned before the formation of the catalyst layer 20, and the process yield can be improved. The cleaning method is such that the ions provided by the ion source 222A bombard the high temperature resistant support material 10 in a vacuum high temperature environment. Thereby, the possibility of recycling and recycling of the high-temperature resistant support material 10 can also be improved. The material of the catalyst target 20A of the present embodiment is, for example, copper. The method of forming the catalyst layer 20 in this embodiment is to perform a sputtering process in a vacuum high temperature environment, but the present invention is not limited thereto. A heating roller 226 is further disposed in the catalyst forming chamber 220 of the embodiment. The high-temperature-resistant support member 10 continuously supplied from the support member supply unit 210 sequentially passes through the cleaning chamber 222 and the sputtering chamber 224 in a state of being attached to the surface of the heating roller 226, so that the yield of forming the catalyst layer 20 can be improved.

本實施例的沉積腔230為高溫化學氣相沉積腔。在沉積腔230形成石墨烯膜30的方法例如是進行化學氣相沉積製程。舉例而言,在高溫(約1300°C)而充滿氫氣、氬氣的環境下分解甲烷(CH4 )、乙烷(C2 H6 )、乙烯(C2 H4 )等高碳化合物,使碳分子在催化劑層20的表面生成石墨烯膜30。由於化學氣相沉積是在約1300°C的環境下進行,因此耐高溫支撐材10的選用就以耐1300°C以上的材料為考量,例如是鈦箔,且鈦箔還具有延展性、彈性佳的優點。當然,當化學氣相沉積的製程溫度改變時,便可據此改變耐高溫支撐材10的材料選用。The deposition chamber 230 of this embodiment is a high temperature chemical vapor deposition chamber. A method of forming the graphene film 30 in the deposition chamber 230 is, for example, a chemical vapor deposition process. For example, high-carbon compounds such as methane (CH 4 ), ethane (C 2 H 6 ), and ethylene (C 2 H 4 ) are decomposed under high temperature (about 1300 ° C) and filled with hydrogen and argon. The carbon molecules form a graphene film 30 on the surface of the catalyst layer 20. Since the chemical vapor deposition is carried out in an environment of about 1300 ° C, the selection of the high temperature resistant support material 10 is considered to be a material resistant to 1300 ° C or higher, such as a titanium foil, and the titanium foil is also ductile and elastic. Good advantage. Of course, when the process temperature of the chemical vapor deposition is changed, the material selection of the high temperature resistant support material 10 can be changed accordingly.

本實施例的石墨烯膜的捲對捲連續製作設備200更包括一冷卻滾輪250。離開沉積腔230的耐高溫支撐材10是依附於冷卻滾輪250的表面而冷卻後,再被第一收捲單元240收捲。冷卻滾輪250與加熱滾輪226的使用方法相似,都是讓耐高溫支撐材10繞過滾輪接近一圈後再離開,便可達成冷卻或加熱的目的。上面依序形成有催化劑層20與石墨烯膜30的耐高溫支撐材10可由第一收捲單元240收捲,以便於儲存與運送至下一產線。The roll-to-roll continuous production apparatus 200 of the graphene film of the present embodiment further includes a cooling roller 250. The high temperature resistant support material 10 leaving the deposition chamber 230 is cooled by the surface of the cooling roller 250 and then wound by the first winding unit 240. The cooling roller 250 is similar to the heating roller 226 in that the high temperature resistant support material 10 is wound around the roller and then left to complete the cooling or heating. The high temperature resistant support material 10 on which the catalyst layer 20 and the graphene film 30 are sequentially formed may be wound by the first winding unit 240 for storage and transportation to the next production line.

本實施例的捲對捲連續製作設備200更包括一捲對捲貼合單元260,用以在石墨烯膜30上貼合一貼合膜40。舉例而言,由第一收捲單元240收捲的具有石墨烯膜30的耐高溫支撐材10放置於一滾輪上,而成捲的貼合膜40則放置於另一滾輪上。兩個滾輪相對壓合並轉動,就可將貼合膜40貼合至石墨烯膜30上。貼合膜40的材料例如是聚對苯二甲酸乙二酯(PET)、環烯烴共聚合物(Cyclic Olefin Copolymers, COC)、環烯烴聚合物(Cyclic Olefin Polymers, COP)、聚醯亞胺(PI)、壓克力(PMMA)、聚碳酸酯(PC)、玻璃等材料,這些基材上還塗覆有接著劑,以便與石墨烯膜30貼合。本實施例中形成有石墨烯膜30的耐高溫支撐材10是由第一收捲單元240收捲後,再提供至捲對捲貼合單元260與貼合膜40貼合。但是,也可跳過第一收捲單元240,直接在石墨烯膜30形成後便至捲對捲貼合單元260與貼合膜40貼合。The roll-to-roll continuous manufacturing apparatus 200 of the present embodiment further includes a roll-to-roll bonding unit 260 for attaching a bonding film 40 to the graphene film 30. For example, the high temperature resistant support material 10 having the graphene film 30 wound by the first winding unit 240 is placed on a roller, and the rolled film 40 is placed on the other roller. The bonding film 40 can be attached to the graphene film 30 by pressing and rotating the two rollers. The material of the bonding film 40 is, for example, polyethylene terephthalate (PET), Cyclic Olefin Copolymers (COC), Cyclic Olefin Polymers (COP), Polyimine ( Materials such as PI), acryl (PMMA), polycarbonate (PC), glass, etc., which are also coated with an adhesive to adhere to the graphene film 30. In the present embodiment, the high-temperature resistant support material 10 in which the graphene film 30 is formed is wound by the first winding unit 240, and then supplied to the roll-to-roll bonding unit 260 and bonded to the bonding film 40. However, the first winding unit 240 may be skipped, and the roll-to-roll bonding unit 260 may be bonded to the bonding film 40 directly after the graphene film 30 is formed.

本實施例的對捲連續製作設備200更包括一蝕刻單元270,用以蝕刻移除催化劑層20,以使石墨烯膜30與耐高溫支撐材10分離而移轉至貼合膜40。既然要移除催化劑層20又要保留貼合膜40、石墨烯膜30與耐高溫支撐材10,則蝕刻單元270進行的便是選擇性蝕刻製程。選擇性蝕刻製程的蝕刻液包括但不侷限於CuCl2 、FeCl3 、NH3 、(NH4 )2 S2 O8 、CrO3 、H2 SO4 、H2 O、C6 H8 O7 、HCl與H2 O2 至少其中之一。具體而言,本實施例採用的蝕刻液為C6 H8 O7 與H2 O2 的組合。The roll continuous manufacturing apparatus 200 of the present embodiment further includes an etching unit 270 for etching and removing the catalyst layer 20 to separate the graphene film 30 from the high temperature resistant support material 10 and transfer it to the bonding film 40. Since the catalyst layer 20 is to be removed and the bonding film 40, the graphene film 30 and the high temperature resistant support material 10 are to be retained, the etching unit 270 performs a selective etching process. The etching solution for the selective etching process includes, but is not limited to, CuCl 2 , FeCl 3 , NH 3 , (NH 4 ) 2 S 2 O 8 , CrO 3 , H 2 SO 4 , H 2 O, C 6 H 8 O 7 , At least one of HCl and H 2 O 2 . Specifically, the etching solution used in the present embodiment is a combination of C 6 H 8 O 7 and H 2 O 2 .

本實施例的對捲連續製作設備200更包括一第二收捲單元280,用以收捲與石墨烯膜30分離後的耐高溫支撐材10,而移轉至貼合膜40上的石墨烯膜30也另外收捲。因此,收捲後的耐高溫支撐材10可再移至支撐材提供單元210而循環使用。另外,移轉至貼合膜40上的石墨烯膜30可能是收成捲狀或管狀,也可先進行裁切後以片狀的型態儲存。The continuous roll making apparatus 200 of the present embodiment further includes a second winding unit 280 for winding the high temperature resistant support material 10 separated from the graphene film 30 and transferring the graphene onto the bonding film 40. The film 30 is also wound separately. Therefore, the wound high temperature resistant support material 10 can be moved to the support material supply unit 210 for recycling. Further, the graphene film 30 transferred to the bonding film 40 may be in the form of a roll or a tube, or may be first cut and stored in a sheet form.

綜上所述,在本發明的石墨烯膜的捲對捲連續製作方法與製作設備中,因為採用了耐高溫支撐材,因此可解決先前技術中不耐高溫而導致的石墨烯膜面積較小的問題。另外,本發明還採用了捲對捲連續製程,具有製程時間短且產量大的優點。In summary, in the roll-to-roll continuous manufacturing method and manufacturing apparatus of the graphene film of the present invention, since the high-temperature resistant support material is used, the area of the graphene film which is not resistant to high temperature in the prior art can be solved. The problem. In addition, the present invention also adopts a roll-to-roll continuous process, which has the advantages of short process time and large output.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧耐高溫支撐材
20‧‧‧催化劑層
20A‧‧‧催化劑靶材
30‧‧‧石墨烯膜
40‧‧‧貼合膜
100、200‧‧‧石墨烯膜的捲對捲連續製作設備
110、210‧‧‧支撐材提供單元
120、220‧‧‧催化劑形成腔
130、230‧‧‧沉積腔
140、240‧‧‧第一收捲單元
222‧‧‧清潔腔
222A‧‧‧離子源
224‧‧‧濺鍍腔
226‧‧‧加熱滾輪
250‧‧‧冷卻滾輪
260‧‧‧捲對捲貼合單元
270‧‧‧蝕刻單元
280‧‧‧第二收捲單元
10‧‧‧High temperature support material
20‧‧‧ catalyst layer
20A‧‧‧ Catalyst Target
30‧‧‧Graphene film
40‧‧‧Finished film
100,200‧‧‧Roll-to-roll continuous production equipment for graphene film
110, 210‧‧‧Support material supply unit
120, 220‧‧‧ catalyst formation cavity
130, 230‧‧‧ deposition chamber
140, 240‧‧‧ first winding unit
222‧‧‧Clean chamber
222A‧‧‧Ion source
224‧‧‧Spray chamber
226‧‧‧heating roller
250‧‧‧Cooling roller
260‧‧‧Volume-to-roll fitting unit
270‧‧‧etching unit
280‧‧‧Second winding unit

圖1是本發明一實施例的石墨烯膜的捲對捲連續製作設備的示意圖。 圖2是本發明另一實施例的石墨烯膜的捲對捲連續製作設備的示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a roll-to-roll continuous production apparatus of a graphene film according to an embodiment of the present invention. 2 is a schematic view of a roll-to-roll continuous production apparatus of a graphene film according to another embodiment of the present invention.

10‧‧‧耐高溫支撐材 10‧‧‧High temperature support material

20‧‧‧催化劑層 20‧‧‧ catalyst layer

30‧‧‧石墨烯膜 30‧‧‧Graphene film

100‧‧‧石墨烯膜的捲對捲連續製作設備 100‧‧‧Roll-to-roll continuous production equipment for graphene film

110‧‧‧支撐材提供單元 110‧‧‧Support material supply unit

120‧‧‧催化劑形成腔 120‧‧‧Catalyst forming cavity

130‧‧‧沉積腔 130‧‧‧Deposition chamber

140‧‧‧第一收捲單元 140‧‧‧First winding unit

Claims (10)

一種石墨烯膜的捲對捲連續製作方法,包括: 從一捲耐高溫支撐材連續地拉出一耐高溫支撐材並通過一催化劑形成腔,以於該耐高溫支撐材上形成一催化劑層;以及 使形成有該催化劑層的該耐高溫支撐材通過一沉積腔,以於該催化劑層上形成一石墨烯膜。A roll-to-roll continuous manufacturing method of a graphene film, comprising: continuously drawing a high temperature resistant support material from a roll of high temperature resistant support material and forming a cavity through a catalyst to form a catalyst layer on the high temperature resistant support material; And passing the high temperature resistant support material formed with the catalyst layer through a deposition chamber to form a graphene film on the catalyst layer. 如申請專利範圍第1項所述的石墨烯膜的捲對捲連續製作方法,更包括在形成該石墨烯膜後將該石墨烯膜自該耐高溫支撐材分離,並回收該耐高溫支撐材成一捲。The method for continuously producing a roll-to-roll of a graphene film according to claim 1, further comprising separating the graphene film from the high temperature resistant support material after forming the graphene film, and recovering the high temperature resistant support material Into a volume. 如申請專利範圍第2項所述的石墨烯膜的捲對捲連續製作方法,其中將該石墨烯膜自該耐高溫支撐材分離的方法包括: 在該石墨烯膜上貼合一貼合膜;以及 移除該催化劑層,以使該石墨烯膜與該耐高溫支撐材分離而移轉至該貼合膜。The method for continuously producing a roll-to-roll of a graphene film according to claim 2, wherein the method for separating the graphene film from the high temperature resistant support comprises: laminating a film on the graphene film And removing the catalyst layer to separate the graphene film from the high temperature resistant support material and transferring to the bonded film. 如申請專利範圍第1項所述的石墨烯膜的捲對捲連續製作方法,其中在該沉積腔形成該石墨烯膜的方法包括進行化學氣相沉積製程。A roll-to-roll continuous production method of a graphene film according to claim 1, wherein the method of forming the graphene film in the deposition chamber comprises performing a chemical vapor deposition process. 如申請專利範圍第1項所述的石墨烯膜的捲對捲連續製作方法,其中該耐高溫支撐材為鈦箔。The roll-to-roll continuous production method of the graphene film according to the first aspect of the invention, wherein the high temperature resistant support material is a titanium foil. 如申請專利範圍第1項所述的石墨烯膜的捲對捲連續製作方法,其中該耐高溫支撐材耐1300°C以上。The method for continuously producing a roll-to-roll of a graphene film according to claim 1, wherein the high temperature resistant support material is resistant to 1300 ° C or higher. 如申請專利範圍第1項所述的石墨烯膜的捲對捲連續製作方法,其中該催化劑層的材料為銅、鎳或銅鎳合金。The method for continuously producing a roll-to-roll of a graphene film according to claim 1, wherein the material of the catalyst layer is copper, nickel or a copper-nickel alloy. 一種石墨烯膜的捲對捲連續製作設備,包括: 一支撐材提供單元,用以容置一捲耐高溫支撐材; 一催化劑形成腔,用以在該支撐材提供單元連續提供的該耐高溫支撐材上形成一催化劑層; 一沉積腔,用以在該催化劑層上形成一石墨烯膜;以及 一第一收捲單元,用以收捲形成有該石墨烯膜的該耐高溫支撐材。A roll-to-roll continuous manufacturing apparatus for graphene film, comprising: a support material supply unit for accommodating a roll of high temperature resistant support material; a catalyst forming cavity for continuously providing the high temperature resistance in the support material supply unit Forming a catalyst layer on the support material; a deposition chamber for forming a graphene film on the catalyst layer; and a first winding unit for winding the high temperature resistant support material on which the graphene film is formed. 如申請專利範圍第8項所述的石墨烯膜的捲對捲連續製作設備,其中該沉積腔為高溫化學氣相沉積腔。The roll-to-roll continuous production apparatus of the graphene film according to claim 8, wherein the deposition chamber is a high temperature chemical vapor deposition chamber. 如申請專利範圍第8項所述的石墨烯膜的捲對捲連續製作設備,更包括: 一捲對捲貼合單元,用以在該石墨烯膜上貼合一貼合膜; 一蝕刻單元,用以蝕刻移除該催化劑層,以使該石墨烯膜與該耐高溫支撐材分離而移轉至該貼合膜;以及 一第二收捲單元,用以收捲與該石墨烯膜分離後的該耐高溫支撐材。The roll-to-roll continuous manufacturing apparatus for a graphene film according to the eighth aspect of the invention, further comprising: a roll-to-roll bonding unit for bonding a bonding film on the graphene film; And etching to remove the catalyst layer to separate the graphene film from the high temperature resistant support material to the bonding film; and a second winding unit for winding and separating the graphene film This high temperature resistant support material.
TW104133336A 2015-10-12 2015-10-12 Roll to roll continuously fabricating method and fabricating apparatus for graphene film TW201713595A (en)

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