TW201712160A - Acid copper electroplating bath and method for electroplating low internal stress and good ductility copper deposits - Google Patents

Acid copper electroplating bath and method for electroplating low internal stress and good ductility copper deposits Download PDF

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TW201712160A
TW201712160A TW105127930A TW105127930A TW201712160A TW 201712160 A TW201712160 A TW 201712160A TW 105127930 A TW105127930 A TW 105127930A TW 105127930 A TW105127930 A TW 105127930A TW 201712160 A TW201712160 A TW 201712160A
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copper
acid
internal stress
stress
bath
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TW105127930A
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玲芸 魏
玉樺 高
雷貝卡 海茲布魯克
羅伯特 科羅納
馬克 列斐伏爾
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羅門哈斯電子材料有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils

Abstract

Acid copper electroplating baths provide improved low internal stress copper deposits with good ductility. The acid copper electroplating baths include one or more polyallylamines and certain sulfur containing accelerators. The acid coper electroplating baths may be used to electroplate thin films on relatively thin substrates to provide thin film copper deposits having low internal stress and high ductility.

Description

酸性銅電鍍浴以及用於電鍍低內應力及優良延展性之銅沈積物的方法 Acid copper plating bath and method for electroplating copper deposits with low internal stress and excellent ductility

本發明係關於一種用於電鍍具有優良延展性之低內應力銅沈積物的銅電鍍浴。更確切而言,本發明係關於一種用於電鍍具有優良延展性之低內應力銅沈積物的銅電鍍浴,其中所述酸性銅電鍍浴包括與某些含硫促進劑組合的聚烯丙胺。 This invention relates to a copper electroplating bath for electroplating low internal stress copper deposits having excellent ductility. More specifically, the present invention relates to a copper electroplating bath for electroplating low internal stress copper deposits having excellent ductility, wherein the acid copper electroplating bath comprises polyallylamine in combination with certain sulfur-containing accelerators.

電沈積金屬的內在或固有應力是由電鍍晶體結構中的缺陷所引起的熟知現象。在電鍍炒作之後,此類缺陷試圖自我校正,並且由此引發了使沈積物收縮(抗張強度)或膨脹(壓縮應力)的力。此應力及其減輕可能成問題。舉例來說,當電鍍主要在基板的一側上進行時,可導致基板捲曲、彎曲及翹曲,此視基板撓性及應力量值而定。應力可導致沈積物與基板的黏結不良,從而引起起泡、剝落或開裂。對於難以黏附基板(如半導體晶圓或具有相對平滑表面形貌的彼等物)的情況尤其如此。一般來說,應力量值與沈積物厚度成比例,因此當需要較厚沈積物時其可能成問題,或實 際上可能限制可達到的沈積物厚度。 The intrinsic or intrinsic stress of an electrodeposited metal is a well-known phenomenon caused by defects in the electroplated crystal structure. After electroplating, such defects attempt to self-correct and thereby induce a force that causes the deposit to shrink (tensile strength) or expand (compressive stress). This stress and its mitigation can be problematic. For example, when electroplating is performed primarily on one side of the substrate, the substrate may be curled, bent, and warped, depending on the substrate flexibility and stress magnitude. Stress can cause poor adhesion of the deposit to the substrate, causing foaming, flaking or cracking. This is especially the case for substrates that are difficult to adhere to, such as semiconductor wafers or their counterparts with relatively smooth surface topography. In general, the amount of stress is proportional to the thickness of the deposit, so it can be problematic when thicker deposits are needed, or It is possible to limit the thickness of the deposit that can be achieved.

包括利用酸性電鍍方法沈積之銅的大部分金屬顯示內應力。工業上的銅酸性電鍍方法利用不同有機添加劑,其有益地改變所述電鍍方法及沈積特徵。亦已知來自於此類電鍍浴的沈積物可以進行室溫自退火。在此類自退火期間發生的晶粒結構轉化同時導致沈積應力的變化,通常是增加應力。不僅內應力本身成問題,而且通常在沈積物隨著隨時間推移自退火時經歷老化的變化,從而導致不可預測。 Most of the metals including copper deposited by the acid plating method exhibit internal stress. Industrial copper acid plating processes utilize different organic additives that beneficially alter the plating process and deposition characteristics. It is also known that deposits from such electroplating baths can be self-annealed at room temperature. The transformation of grain structure that occurs during such self-annealing simultaneously results in a change in deposition stress, usually an increase in stress. Not only is the internal stress itself problematic, but it is often unpredictable as the deposit undergoes aging changes as it self-anneals over time.

銅電鍍時減輕固有應力的基本機制尚未充分瞭解。如減少沈積物厚度、降低電流密度的參數,亦即電鍍速度、基板類型、晶種層或下方板選擇、電鍍浴組合物(如陰離子型)、添加劑、雜質及污染物,已知影響沈積物應力。雖然已經採用此類減少應力的經驗方法,但通常不是不變的或損害電鍍方法的功效。 The basic mechanism for mitigating intrinsic stress during copper plating is not fully understood. Parameters such as reduced deposit thickness and reduced current density, ie plating speed, substrate type, seed layer or underboard selection, electroplating bath compositions (eg anionic), additives, impurities and contaminants, are known to affect deposits stress. Although such empirical methods of stress reduction have been employed, they are generally not constant or compromise the efficacy of the plating process.

銅沈積物的另一個重要參數是其延展性。延展性可被定義為固體材料在拉伸應力下變形的能力。期望具有高延展性的銅沈積物以防止或減小在拉伸應力下銅隨時間開裂的可能性。理想地,銅沈積物具有相對低內應力及高延展性;然而,通常在內應力與延展性之間存在折衷。因此,仍然需要銅電鍍浴及減小銅沈積物中的內應力以及提供優良或高延展性的方法。 Another important parameter of copper deposits is their ductility. Ductility can be defined as the ability of a solid material to deform under tensile stress. Copper deposits with high ductility are desirable to prevent or reduce the likelihood of copper cracking over time under tensile stress. Ideally, copper deposits have relatively low internal stress and high ductility; however, there is usually a tradeoff between internal stress and ductility. Therefore, there is still a need for a copper electroplating bath and a method of reducing internal stress in copper deposits and providing excellent or high ductility.

一種酸性銅電鍍浴包括一種或多種銅離子源、一種或多種電解質、一種或多種聚烯丙胺、一種或多種(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯、其酸及其鹽以及一種或多種 抑制劑。 An acid copper electroplating bath comprising one or more sources of copper ions, one or more electrolytes, one or more polyallylamines, one or more (O-ethyldithiocarbonate)-S-(3-sulfopropyl)- Esters, their acids and their salts, and one or more Inhibitor.

方法包括使基板與包含一種或多種銅離子源、一種或多種電解質、一種或多種聚烯丙胺、一種或多種(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯、其酸及其鹽以及一種或多種抑制劑的銅電鍍浴接觸;以及在基板上電鍍低內應力及高延展性的銅。 The method comprises reacting a substrate with one or more sources of copper ions, one or more electrolytes, one or more polyallylamines, one or more (O-ethyldithiocarbonate)-S-(3-sulfopropyl)- Contacting a copper electroplating bath of an ester, an acid thereof and a salt thereof, and one or more inhibitors; and plating a low internal stress and high ductility copper on the substrate.

本發明亦關於一種銅膜,其具有0psi至950psi的初始內應力及300psi至900psi的老化後內應力以及在50lbf或更大的最大拉伸應力的負載下8%或更大的伸長率。 The present invention also relates to a copper film having an initial internal stress of from 0 psi to 950 psi and an internal stress after aging of from 300 psi to 900 psi and an elongation of 8% or more under a load of a maximum tensile stress of 50 lbf or more.

所述酸性銅沈積物的內應力低,具有相對較大晶粒結構。內應力及晶粒結構基本上不隨著沈積物老化而變化,因此增加銅電鍍浴及利用其電鍍之沈積物之效能的可預測性。所述低內應力銅沈積物亦具有優良或高延展性,使得所述銅沈積物與多數習知銅沈積物相比不容易在基板上開裂。利用本發明的浴所電鍍的銅在低應力與延展性之間達成良好的均衡,此當利用許多習知銅浴電鍍銅時未發現。所述銅電鍍浴可用於在相對較薄基板上沈積銅膜,而無所述較薄基板可能彎曲、翹曲、變形、起泡、剝落或開裂的基本擔憂。 The acid copper deposit has low internal stress and a relatively large grain structure. The internal stress and grain structure do not substantially change with the aging of the deposit, thus increasing the predictability of the effectiveness of the copper electroplating bath and the deposits it utilizes for electroplating. The low internal stress copper deposits also have excellent or high ductility such that the copper deposits do not easily crack on the substrate as compared to most conventional copper deposits. Copper plated with the bath of the present invention achieves a good balance between low stress and ductility, which was not observed when copper was electroplated using many conventional copper baths. The copper electroplating bath can be used to deposit a copper film on a relatively thin substrate without the basic concern that the thinner substrate may bend, warp, deform, foam, flake or crack.

除非上下文另外明確指示,否則以下縮寫具有以下含義:℃=攝氏度;g=公克;ml=毫升;L=公升;ppm=百萬分率=mg/L;A=安培(ampcrcs)=Amps;DC=直流電;dm=分米;mm=毫米;μm=微米;nm=奈米;Mw=重均分子量;SEM= 掃描電子顯微照片;ASD=A/dm2;2.54cm=1吋;lbf=磅-力=4.44822162 N;N=牛頓;psi=磅/平方吋=0.06805大氣壓;1大氣壓=1.01325x106達因/平方公分;以及RFID=射頻識別。 Unless the context clearly indicates otherwise, the following abbreviations have the following meanings: °C = degrees Celsius; g = grams; ml = milliliters; L = liters; ppm = parts per million = mg / L; A = amperes (ampcrcs) = Amps; = DC; dm = decimeter; mm = mm; μm = micron; nm = nanometer; Mw = weight average molecular weight; SEM = scanning electron micrograph; ASD = A / dm 2 ; 2.54 cm = 1 吋; lbf = Pound-force = 4.44482162 N; N = Newton; psi = pounds per square inch = 0.068805 atmosphere; 1 atmosphere = 1.01325 x 10 6 dynes / square centimeter; and RFID = radio frequency identification.

如通篇本說明書中所使用的術語“沈積(depositing)”、“電鍍(plating)”及“電鍍(electroplating)”可互換使用。術語“部分”意指分子的一部分或官能團。部分“”=-CH2-CH2-。不定冠詞“一個(種)(a及an)”包括單數及複數。術語“延展性”意指固體材料在拉伸應力下變形的能力。術語“拉伸應力”意指材料在失效前耐受的最大應力。 The terms "depositing", "plating" and "electroplating" as used throughout this specification are used interchangeably. The term "portion" means a moiety or functional group of a molecule. section" "--CH 2 -CH 2 -. The indefinite article "a" (a and an) includes both singular and plural. The term "ductility" means the ability of a solid material to deform under tensile stress. The term "stretching""stress" means the maximum stress that a material withstands before failure.

除非另外指明,否則所有百分比及比率都以重量計。所有範圍是包括性的並且可以任何次序組合,除非很明顯此類數值範圍限制於總計為100%。 All percentages and ratios are by weight unless otherwise indicated. All ranges are inclusive and may be combined in any order unless it is obvious that such numerical ranges are limited to a total of 100%.

銅金屬電鍍浴提供具有低內應力與高延展性組合的薄膜銅沈積物。銅金屬是利用低應力及高延展性酸性銅浴電鍍,所述酸性銅浴包括一種或多種銅離子源、一種或多種電解質、一種或多種聚烯丙胺、一種或多種(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯、其酸或其鹼鹽及一種或多種抑制劑,以使得銅沈積物具有低內應力及高延展性,較佳為隨著銅沈積物老化極少變化的應力及高延展性。所述低內應力銅沈積物可具有相對大的沈積晶粒尺寸(通常為2微米或更大)的無光澤外觀。所述酸性低應力高延展性銅浴亦可包含一種或多種氯離子源及通常包含於銅電鍍液中的一種或多種習知添加劑。較佳地,一種或多種氯離子源包括於所述酸性銅電鍍浴中。 Copper metal plating baths provide thin film copper deposits with a combination of low internal stress and high ductility. Copper metal is electroplated using a low stress and high ductility acidic copper bath comprising one or more sources of copper ions, one or more electrolytes, one or more polyallylamines, one or more (O-ethyl disulfide) a base carbonate)-S-(3-sulfopropyl)-ester, an acid thereof or an alkali salt thereof, and one or more inhibitors, so that the copper deposit has low internal stress and high ductility, preferably with copper Precipitation aging has very little change in stress and high ductility. The low internal stress copper deposit may have a relatively large matte appearance of deposited grain size (typically 2 microns or greater). The acidic low stress, high ductility copper bath may also comprise one or more sources of chloride ions and one or more conventional additives typically included in copper plating baths. Preferably, one or more sources of chloride ions are included in the acid copper electroplating bath.

較佳地,一種或多種聚烯丙胺具有通式: Preferably, the one or more polyallylamines have the formula:

其中,“n”為使得Mw為1000g/mol或更大的數。較佳地,本發明之聚烯丙胺之Mw的範圍為4000g/莫耳至60,000g/莫耳,更佳地為10,000g/莫耳至30,000g/莫耳。 Here, "n" is a number such that Mw is 1000 g/mol or more. Preferably, the polyallylamine of the present invention has a Mw in the range of from 4000 g/mol to 60,000 g/mol, more preferably from 10,000 g/mol to 30,000 g/mol.

聚烯丙胺以1ppm至10ppm,較佳1ppm至5ppm,更佳1ppm至2ppm的量包括於酸性銅電鍍浴中。 The polyallylamine is included in the acid copper plating bath in an amount of from 1 ppm to 10 ppm, preferably from 1 ppm to 5 ppm, more preferably from 1 ppm to 2 ppm.

一種或多種(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯、其酸及其鹼金屬鹽以100ppm至300ppm,較佳120ppm至220ppm的量包括於銅電鍍浴中。酯的酸形式為3-[(乙氧基硫酮基甲基)硫基]-1-丙磺酸。鹼金屬鹽包括(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯鉀鹽及(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯鈉鹽。較佳地,(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯鉀鹽包括於銅電鍍浴中。雖然不被理論所束縛,但認為(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯及其鹼金屬鹽與一種或多種聚烯丙胺組合使低內應力及高延展性銅金屬膜沈積物能夠組合。 One or more (O-ethyldithiocarbonate)-S-(3-sulfopropyl)-ester, an acid thereof and an alkali metal salt thereof are included in copper plating in an amount of from 100 ppm to 300 ppm, preferably from 120 ppm to 220 ppm In the bath. The acid form of the ester is 3-[(ethoxythioketomethyl)thio]-1-propanesulfonic acid. The alkali metal salt includes (O-ethyldithiocarbonate)-S-(3-sulfopropyl)-ester potassium salt and (O-ethyldithiocarbonate)-S-(3-sulfopropyl group) )-ester sodium salt. Preferably, the (O-ethyldithiocarbamate)-S-(3-sulfopropyl)-ester potassium salt is included in a copper electroplating bath. Although not bound by theory, it is believed that (O-ethyldithiocarbamate)-S-(3-sulfopropyl)-ester and its alkali metal salt in combination with one or more polyallylamines provide low internal stress and Highly ductile copper metal film deposits can be combined.

視情況,一種或多種其他促進劑可以包括於低應力及高延展性酸性銅電鍍浴中。促進劑較佳為與一種或多種抑制劑組合可在指定電鍍電勢下使得電鍍速率增加的化合物。此類視情況存在的促進劑為3-巰基-1-丙磺酸、伸乙基二硫基二丙磺酸、雙-(ω-磺丁基)-二硫化物、甲基-(ω-磺丙基)-二硫化物、N,N-二甲基二硫基胺基甲酸(3-磺丙基)酯、3-[(胺 基-亞胺基甲基)-硫醇]-1-丙磺酸、3-(2-苯甲基噻唑基硫基)-1-丙磺酸、雙(磺丙基)-二硫化物及其鹼金屬鹽。較佳地,此類促進劑自銅電鍍浴中排除。 Optionally, one or more other promoters may be included in the low stress and high ductility acid copper electroplating bath. The promoter is preferably a compound that, in combination with one or more inhibitors, increases the plating rate at a given plating potential. Such promoters as the case may be 3-mercapto-1-propanesulfonic acid, ethyldithiodipropanesulfonic acid, bis-(ω-sulfobutyl)-disulfide, methyl-(ω- Sulfopropyl)-disulfide, N,N-dimethyldithiocarbamic acid (3-sulfopropyl) ester, 3-[(amine -iminomethyl)-thiol]-1-propanesulfonic acid, 3-(2-benzylthiothiazolylthio)-1-propanesulfonic acid, bis(sulfopropyl)-disulfide and Its alkali metal salt. Preferably, such promoters are excluded from the copper electroplating bath.

當包括視情況存在的促進劑時,其以1ppm及更高的量包括。通常此類促進劑可以2ppm至500ppm,更通常2ppm至250ppm的量包括於酸性銅電鍍浴中。 When included as an accelerator present, it is included in an amount of 1 ppm and higher. Typically such promoters can be included in the acid copper electroplating bath in an amount from 2 ppm to 500 ppm, more typically from 2 ppm to 250 ppm.

包括於低應力高延展性酸性銅電鍍浴中的抑制劑包括(但不限於)聚氧烷二醇、羧甲基纖維素、壬基苯酚聚乙二醇醚、辛二醇雙(聚烷二醇醚)、辛醇聚烷二醇醚、油酸聚二醇酯、聚伸乙基丙二醇、聚乙二醇、聚乙二醇二甲醚、聚氧化丙二醇、聚丙二醇、聚乙烯醇、硬脂酸聚乙二醇酯及硬脂醇聚乙二醇醚。此類抑制劑包括的量為0.1g/L至10g/L,較佳為0.1g/L至5g/L,更佳為0.1g/L至2g/L,並且最佳為0.1g/L至1g/L。 Inhibitors included in low stress, high ductility acid copper electroplating baths include, but are not limited to, polyoxyalkylene glycols, carboxymethyl cellulose, nonylphenol polyglycol ethers, octanediol bis (polyalkylene) Alcohol ether), octanol polyalkylene glycol ether, oleic acid polyglycol ester, polyethyl propylene glycol, polyethylene glycol, polyethylene glycol dimethyl ether, polyoxypropylene glycol, polypropylene glycol, polyvinyl alcohol, hard Polyethylene glycol ester of fatty acid and stearyl glycol polyglycol ether. Such inhibitors are included in an amount of from 0.1 g/L to 10 g/L, preferably from 0.1 g/L to 5 g/L, more preferably from 0.1 g/L to 2 g/L, and most preferably from 0.1 g/L to 1g/L.

適合的銅離子源是銅鹽並且包括(但不限於):硫酸銅;鹵化銅,如氯化銅;乙酸銅;硝酸銅;四氟硼酸銅;烷基磺酸銅;芳基磺酸銅;胺基磺酸銅;過氯酸銅及葡糖酸銅。示例性烷烴磺酸銅包括(C1-C6)烷磺酸銅,且更佳為(C1-C3)烷磺酸銅。較佳的烷烴磺酸銅為甲磺酸銅、乙磺酸銅及丙磺酸銅。示例性芳基磺酸銅包括(但不限於)苯磺酸銅及對甲苯磺酸銅。可使用銅離子源混合物。可將除銅離子以外的一種或多種金屬離子鹽添加至酸性銅電鍍浴中。典型地,銅鹽的存在量足以提供10g/L至400g/L電鍍溶液銅離子的量。電鍍浴不包括任何合金金屬。電鍍浴針對薄膜銅沈積物,不針對銅合金沈積物或任何其他金屬或金屬合金。 Suitable copper ion sources are copper salts and include, but are not limited to: copper sulfate; copper halides such as copper chloride; copper acetate; copper nitrate; copper tetrafluoroborate; copper alkyl sulfonate; copper aryl sulfonate; Copper sulfonate; copper perchlorate and copper gluconate. Exemplary copper alkanesulfonates include copper (C 1 -C 6 ) alkanesulfonate, and more preferably copper (C 1 -C 3 ) alkanesulfonate. Preferred copper alkane sulfonates are copper methane sulfonate, copper ethane sulfonate and copper propane sulfonate. Exemplary copper aryl sulfonates include, but are not limited to, copper benzene sulfonate and copper p-toluene sulfonate. A copper ion source mixture can be used. One or more metal ion salts other than copper ions may be added to the acid copper electroplating bath. Typically, the copper salt is present in an amount sufficient to provide an amount of copper ions in the plating solution from 10 g/L to 400 g/L. The plating bath does not include any alloy metal. The electroplating bath is for thin film copper deposits, not for copper alloy deposits or any other metal or metal alloy.

適合的電解質包括(但不限於)硫酸、乙酸、氟硼酸、烷磺酸(如甲磺酸、乙磺酸、丙磺酸及三氟甲磺酸)、芳基磺酸(如苯磺酸、對甲苯磺酸)、胺基磺酸、氫氯酸、氫溴酸、過氯酸、硝酸、鉻酸及磷酸。酸的混合物可用於本發明的金屬電鍍浴。較佳的酸包括硫酸、甲磺酸、乙磺酸、丙磺酸、鹽酸及其混合物。酸的存在量可在1g/L至400g/L範圍內。電解質一般可購自多種來源並且可以無需進一步純化即使用。 Suitable electrolytes include, but are not limited to, sulfuric acid, acetic acid, fluoroboric acid, alkanesulfonic acids (such as methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, and trifluoromethanesulfonic acid), arylsulfonic acids (such as benzenesulfonic acid, P-toluenesulfonic acid), aminosulfonic acid, hydrochloric acid, hydrobromic acid, perchloric acid, nitric acid, chromic acid, and phosphoric acid. A mixture of acids can be used in the metal plating bath of the present invention. Preferred acids include sulfuric acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, hydrochloric acid, and mixtures thereof. The acid may be present in the range of from 1 g/L to 400 g/L. Electrolytes are generally available from a variety of sources and can be used without further purification.

一種或多種視情況存在之添加劑亦可包含於電鍍組合物中。此類添加劑包含(但不限於)調平劑、界面活性劑、緩衝劑、pH調節劑、鹵離子源、有機酸、螯合劑及錯合劑。此類添加劑在此項技術中已熟知,並且可以習知量使用。 One or more optional additives may also be included in the electroplating composition. Such additives include, but are not limited to, leveling agents, surfactants, buffers, pH adjusters, halide ion sources, organic acids, chelating agents, and complexing agents. Such additives are well known in the art and can be used in conventional amounts.

調平劑可包含於酸性銅電鍍浴中。此類調平劑包括(但不限於)有機磺基磺酸鹽(如1-(2-羥乙基)-2-咪唑啉硫酮(HIT)、4-巰基吡啶、2-巰基噻唑啉、伸乙基硫脲、硫脲),公開於Step等人的美國專利第6,610,192號中、Wang等人的美國專利第7,128,822號中、Hayashi等人的美國專利第7,374,652號中以及Hagiwara等人的美國專利第6,800,188中的彼等物。此類調平劑可以習知含量包括。當包括其時,其以1ppb至1g/L的量包括。較佳自浴中排除調平劑。 The leveling agent can be included in an acid copper plating bath. Such leveling agents include, but are not limited to, organosulfosulfonates such as 1-(2-hydroxyethyl)-2-imidazolinthione (HIT), 4-mercaptopyridine, 2-mercaptothiazoline, Ethyl thiourea, thiourea, is disclosed in U.S. Patent No. 6,610,192 to Step et al., U.S. Patent No. 7,128,822 to Wang et al., U.S. Patent No. 7,374,652 to Hayashi et al., and to Hagiwara et al. Those of the patents 6,800,188. Such leveling agents can be included in known amounts. When included, it is included in an amount of from 1 ppb to 1 g/L. It is preferred to exclude the leveling agent from the bath.

習知的非離子界面活性劑、陰離子界面活性劑、陽離子界面活性劑及兩性界面活性劑可包括於酸性銅電鍍浴中。此類界面活性劑在此項技術中已熟知並且多數為市售的。通常所述界面活性劑為非離子界面活性劑。一般來說, 界面活性劑以習知含量包括。通常,其可以0.05g/l至15g/L的含量包括於電鍍浴中。 Conventional nonionic surfactants, anionic surfactants, cationic surfactants, and amphoteric surfactants can be included in the acid copper plating bath. Such surfactants are well known in the art and are mostly commercially available. Typically the surfactant is a nonionic surfactant. Generally speaking, Surfactants are included in conventional amounts. Generally, it may be included in the plating bath in an amount of from 0.05 g/l to 15 g/L.

鹵素離子包括氯離子、氟離子及溴離子。此類鹵化物通常以水溶性鹽或酸的形式添加至所述浴中。較佳地,所述銅電鍍浴包括氯離子。氯離子較佳以氫氯酸的形式或以氯化鈉或氯化鉀的形式引入所述浴中。較佳地,氯離子以氫氯酸的形式添加至所述浴中。包括於所述浴中的鹵素含量可為20ppm至500ppm,較佳為20ppm至100ppm。 Halogen ions include chloride ions, fluoride ions, and bromide ions. Such halides are typically added to the bath in the form of a water soluble salt or acid. Preferably, the copper electroplating bath comprises chloride ions. The chloride ion is preferably introduced into the bath in the form of hydrochloric acid or in the form of sodium chloride or potassium chloride. Preferably, chloride ions are added to the bath in the form of hydrochloric acid. The halogen content included in the bath may be from 20 ppm to 500 ppm, preferably from 20 ppm to 100 ppm.

所述低應力、高延展性酸性銅電鍍浴具有的pH範圍為小於1至小於7,較佳為小於1至5,更佳為小於1至2,所述pH最佳為小於1至1。 The low stress, high ductility acid copper electroplating bath has a pH in the range of less than 1 to less than 7, preferably less than 1 to 5, more preferably less than 1 to 2, and the pH is preferably less than 1 to 1.

電鍍可為DC電鍍、脈衝電鍍、脈衝換向電鍍、光感應電鍍(LIP)或光輔助電鍍。較佳地,所述低應力、高延展性銅膜通過DC、LIP或光輔助電鍍來電鍍。一般來說,取決於應用,電流密度範圍為0.5至50 ASD。通常,電流密度範圍為1 ASD至20 ASD或如4 ASD至20 ASD或15 ASD至20 ASD。電鍍在15℃至80℃或如室溫至60℃或如20℃至40℃或如20℃至25℃的溫度範圍內完成。 The plating can be DC plating, pulse plating, pulse commutation plating, photo induction plating (LIP) or photo-assisted plating. Preferably, the low stress, high ductility copper film is electroplated by DC, LIP or photo-assisted plating. Generally, current densities range from 0.5 to 50 ASD, depending on the application. Typically, current densities range from 1 ASD to 20 ASD or such as 4 ASD to 20 ASD or 15 ASD to 20 ASD. The electroplating is carried out at a temperature ranging from 15 ° C to 80 ° C or such as from room temperature to 60 ° C or such as from 20 ° C to 40 ° C or such as from 20 ° C to 25 ° C.

所述銅膜的內應力及延展性可使用習知方法測定。通常,低內應力使用沈積物應力分析儀測量,如購自賓夕法尼亞州雅各布斯(Jacobus,PA)的專業測試及開發公司(Specialty Testing and Development Co.)。低內應力可利用方程式S=U/3TxK確定,其中S是以psi為單位的應力,U是在校準刻度上偏轉的遞增數目,T是以吋為單位的沈積物厚度,並且K是測試條帶校準常數。所述常數可以改變,並且由沈 積物應力分析儀提供。在電鍍後並且接著在老化幾天之後,較佳地在銅膜沈積在基板(如習知銅/鈹合金測試條帶)上後兩天,立即測量低內應力。內應力測量緊接在電鍍之後及在老化之後在室溫下進行。當室溫變化時,為了測量內應力,室溫範圍通常為18℃至25℃,較佳地為20℃至25℃。較佳地,將1μm至10μm的銅膜,更佳地1μm至5μm的銅膜電鍍在測試條帶上。緊接在將銅電鍍在基板上之後測量的起始內應力的範圍在室溫下可為0psi至950psi,較佳為0psi至900psi,更佳為0psi至850psi。在老化(如兩天)之後,內應力的範圍在室溫下可為300psi至900psi,較佳為300psi至850psi,更佳為300psi至840psi。當內應力在兩天老化週期略微變化時,在所述兩天老化週期之後在室溫下本發明銅膜內應力的測量值通常不顯著變化。 The internal stress and ductility of the copper film can be measured using a conventional method. Typically, low internal stresses are measured using a sediment stress analyzer, such as the Specialty Testing and Development Co., available from Jacobs, PA. The low internal stress can be determined using the equation S=U/3TxK, where S is the stress in psi, U is the incremental number of deflections on the calibration scale, T is the thickness of the deposit in 吋, and K is the test strip With calibration constants. The constant can be changed and by Provided by the accumulation stress analyzer. After electroplating and then several days after aging, the low internal stress is measured immediately, preferably two days after the copper film is deposited on the substrate, such as a conventional copper/niobium alloy test strip. The internal stress measurement was carried out immediately after electroplating and after aging at room temperature. When the room temperature is changed, in order to measure the internal stress, the room temperature is usually in the range of 18 ° C to 25 ° C, preferably 20 ° C to 25 ° C. Preferably, a copper film of 1 μm to 10 μm, more preferably 1 μm to 5 μm, is plated on the test strip. The initial internal stress measured immediately after plating the copper on the substrate may range from 0 psi to 950 psi at room temperature, preferably from 0 psi to 900 psi, more preferably from 0 psi to 850 psi. After aging (e.g., two days), the internal stress can range from 300 psi to 900 psi at room temperature, preferably from 300 psi to 850 psi, more preferably from 300 psi to 840 psi. When the internal stress slightly changes during the two-day aging period, the measurement of the internal stress of the copper film of the present invention at room temperature after the two-day aging period usually does not significantly change.

使用習知的伸長率測試及裝置測量延展性。較佳地,伸長率測試使用行業標準IPC-TM-650方法用如英斯特朗拉力測試儀33R4464(Instron pull tester 33R4464)的裝置完成。將銅電鍍在基板(如不鏽鋼面板)上。通常,將銅以薄膜形式電鍍在基板上至50μm至100μm,較佳為60μm至80μm的厚度。將銅自基板上剝離並且退火1至5小時,較佳2至5小時。退火在100℃至150℃,較佳為110℃至130℃的溫度下進行。最大拉伸應力的伸長率或荷載通常不是預設參數。材料在失效或開裂之前可耐受的最大拉伸應力的荷載越大,延展性越高或越好。通常,伸長在50lbf或最大的拉伸應力的荷載下進行。較佳地,伸長在60lbf或更大的張應力的荷載下進行。更佳地,伸長在70lbf至90lbf的最大拉伸 應力的荷載下進行。伸長率範圍為大於或等於8%,較佳地為9%至15%。 The ductility is measured using conventional elongation tests and devices. Preferably, the elongation test is performed using an industry standard IPC-TM-650 method using a device such as the Instron pull tester 33R4464. The copper is plated on a substrate such as a stainless steel panel. Usually, copper is electroplated on the substrate in a film form to a thickness of 50 μm to 100 μm, preferably 60 μm to 80 μm. The copper is stripped from the substrate and annealed for 1 to 5 hours, preferably 2 to 5 hours. Annealing is carried out at a temperature of from 100 ° C to 150 ° C, preferably from 110 ° C to 130 ° C. The elongation or load of the maximum tensile stress is usually not a preset parameter. The greater the load of the maximum tensile stress that the material can withstand before failure or cracking, the higher or better ductility. Typically, the elongation is carried out under a load of 50 lbf or maximum tensile stress. Preferably, the elongation is carried out under a load of a tensile stress of 60 lbf or more. More preferably, the maximum stretch at 70 lbf to 90 lbf Perform under stress loading. The elongation ranges from greater than or equal to 8%, preferably from 9% to 15%.

所述低應力、高延展性酸性銅電鍍浴及方法用於在相對薄基板(如100μm至220μm或如100μm至150μm的半導體晶圓)上或在有彎曲、捲曲或翹曲問題的基板側上電鍍銅。所述低應力、高延展性酸性銅電鍍浴亦可用於在難以黏附的沈積物起泡、剝落或開裂是常見的基板上電鍍銅。舉例來說,所述方法可以用於製造印刷電路及接線板,如用於光伏裝置及太陽電池的撓性電路板、撓性電路天線、RFID標籤、電解箔片、半導體晶圓,所述太陽電池包括叉指形後緣接觸太陽能電池、帶有本徵薄層的異質結(HIT)電池及完全電鍍的前接觸電池。所述酸性銅電鍍浴用於較佳地以1μm至5mm電鍍銅,更佳地5μm至1mm的厚度範圍電鍍銅。當銅作為主要導體用於形成太陽能電池的接點時,所述銅較佳地電鍍至1μm至60μm,更佳5μm至50μm範圍內的厚度。 The low stress, high ductility acid copper electroplating bath and method are used on a relatively thin substrate (eg, a semiconductor wafer of 100 μm to 220 μm or such as 100 μm to 150 μm) or on a substrate side having problems of bending, curling, or warpage Electroplated copper. The low stress, high ductility acid copper electroplating bath can also be used to electroplate copper on substrates that are common for foaming, flaking or cracking of deposits that are difficult to adhere. For example, the method can be used to manufacture printed circuits and wiring boards, such as flexible circuit boards for photovoltaic devices and solar cells, flexible circuit antennas, RFID tags, electrolytic foils, semiconductor wafers, the sun The battery includes an interdigitated trailing edge contact solar cell, a heterojunction (HIT) cell with an intrinsic thin layer, and a fully plated front contact cell. The acid copper plating bath is used to electroplate copper preferably in a thickness range of 1 μm to 5 mm of electroplated copper, more preferably 5 μm to 1 mm. When copper is used as the main conductor for forming the contacts of the solar cell, the copper is preferably plated to a thickness in the range of 1 μm to 60 μm, more preferably 5 μm to 50 μm.

所述銅沈積物的內應力低,晶粒結構相對較大。此外,所述內應力及晶粒結構基本上不隨著沈積物老化而變化,從而增加銅電鍍浴及利用其電鍍之沈積物之效能的可預測性。所述低內應力銅沈積物亦具有優良的延展性,使得其與許多習知銅沈積物相比不容易在基板上開裂。利用本發明的浴所電鍍的銅在低應力與延展性之間有良好的均衡,此為利用許多習知銅浴電鍍銅時所未發現的。所述銅電鍍浴可用於在相對較薄基板上沈積銅,而無所述基板可能彎曲、翹曲、變形、起泡、剝落或開裂的實質性問題。 The copper deposit has a low internal stress and a relatively large grain structure. In addition, the internal stress and grain structure do not substantially change with the aging of the deposit, thereby increasing the predictability of the performance of the copper electroplating bath and the deposits using the electroplating thereof. The low internal stress copper deposit also has excellent ductility such that it does not easily crack on the substrate as compared to many conventional copper deposits. The copper plated with the bath of the present invention has a good balance between low stress and ductility, which was not found when copper was electroplated using many conventional copper baths. The copper electroplating bath can be used to deposit copper on relatively thin substrates without substantial problems that the substrate may bend, warp, deform, foam, flake or crack.

以下實例是為了說明本發明,而非限制其範圍而提供。 The following examples are provided to illustrate the invention, but not to limit its scope.

實例1 Example 1

製備以下含水的酸性銅電鍍浴。 The following aqueous acid copper plating bath was prepared.

銅電鍍浴的組分是使用習知的實驗室操作步驟製成的,其中將有機物添加至水中,接著添加無機組分。在低於30℃的溫度下伴以加熱進行攪拌或攪動以確保所有組分都溶解於水中。允許所述浴在銅電鍍之前達到室溫。所述酸性銅電鍍浴的pH值範圍在室溫下及在銅電鍍期間為小於1至1。 The components of the copper electroplating bath are made using conventional laboratory procedures in which organics are added to the water followed by the addition of inorganic components. Stirring or agitation is carried out with heating at a temperature below 30 ° C to ensure that all components are dissolved in the water. The bath was allowed to reach room temperature prior to copper plating. The pH of the acid copper electroplating bath ranges from less than 1 to 1 at room temperature and during copper plating.

實例2 Example 2

將兩個撓性銅合金箔測試條帶的一側上塗佈介電質,使得能夠在未經塗佈的一側上進行單側電鍍。將所述測試條帶用電鍍膠帶黏貼至支撐基板,並且置於包含具有在實例1中的表的浴1的配方的酸性銅電鍍浴的哈林槽(haring cell)中。所述浴保持在室溫下。銅金屬條帶用作陽極。測試箔條帶及陽極被連接至整流器。所述測試箔條帶以2 ASD的 平均電流密度銅電鍍以在每個條帶的未經塗佈側上沈積5μm的銅厚度。在電鍍完成之後,將所述測試條帶自哈林槽中移出,用水沖洗,乾燥並且將電鍍膠帶自測試條帶上移除。銅沈積物在所述條帶上的內應力經測定為838psi。內應力可利用方程式S=U/3TxK確定,其中S是以psi為單位的應力,U是在校準刻度上偏轉的遞增數目。T是以吋為單位的沈積物厚度,並且K是測試條帶校準常數。在測試條帶老化2天之後,各個條帶的應力經測定為837psi。老化後的銅沈積物內應力保持大體上相同。 The dielectric is coated on one side of the two flexible copper alloy foil test strips so that one side plating can be performed on the uncoated side. The test strip was adhered to the support substrate with a plating tape and placed in a Haring cell containing an acid copper plating bath having the formulation of the bath 1 of the watch in Example 1. The bath was kept at room temperature. A copper metal strip is used as the anode. The test foil strip and anode are connected to a rectifier. The test foil strip is 2 ASD The average current density was copper plated to deposit a 5 [mu]m copper thickness on the uncoated side of each strip. After the plating is complete, the test strip is removed from the Harlem tank, rinsed with water, dried and the electroplated tape removed from the test strip. The internal stress of the copper deposit on the strip was determined to be 838 psi. The internal stress can be determined using the equation S = U / 3TxK, where S is the stress in psi and U is the incremental number of deflections on the calibration scale. T is the sediment thickness in 吋, and K is the test strip calibration constant. After the test strips were aged for 2 days, the stress of each strip was determined to be 837 psi. The internal stress of the copper deposit after aging remains substantially the same.

亦使用行業標準LPC-TM-650方法進行伸長率測試。在3.8 ASD下將75μm的銅電鍍在不鏽鋼面板上。在電鍍之後將銅膜剝離,並且在125℃下退火4小時。拉力測試在英斯特朗拉力測試儀33R4464上進行。浴1的伸長率為14%,並且在最大拉伸應力下的荷載為76lbf。結果顯示對於利用含有聚烯丙胺及(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯鉀鹽的浴電鍍的銅沈積物而言,內應力低並且延展性高。 Elongation tests were also performed using the industry standard LPC-TM-650 method. 75 μm copper was electroplated on a stainless steel panel at 3.8 ASD. The copper film was peeled off after electroplating and annealed at 125 ° C for 4 hours. The tensile test was performed on an Instron pull tester 33R4464. The elongation of bath 1 was 14% and the load at maximum tensile stress was 76 lbf. The results show that the internal stress is low and ductile for copper deposits electroplated with a bath containing polyallylamine and (O-ethyldithiocarbamate)-S-(3-sulfopropyl)-ester potassium salt. high.

實例3(比較) Example 3 (comparative)

將兩個撓性銅/鈹合金箔測試條帶的一側上塗佈介電質,使得能夠在未經塗佈的一側上進行單側電鍍。>將所述測試條帶用電鍍膠帶黏貼至支撐基板,並且置於包含酸性銅電鍍浴2的哈林槽中。所述浴處於室溫下。銅金屬條帶用作陽極。測試箔條帶及陽極被連接至整流器。所述測試箔條帶是以2 ASD的平均電流密度銅電鍍以在每個條帶的未經塗佈側上沈積5μm的銅厚度。在電鍍完成之後,將所述測試條帶自哈林槽中移出,用晶圓沖洗,乾燥並且將電鍍膠帶自測 試條帶上移除。將所述測試條帶的一端插入沈積物應力分析儀的螺旋夾具中。銅沈積物在所述條帶上的內應力經測定為211psi。內應力可利用方程式S=U/3TxK確定,其中S是以psi為單位的應力,U是在校準刻度上偏轉的遞增數目,T是以吋為單位的沈積物厚度,並且K是測試條帶校準常數。在測試條帶老化2天之後,各個條帶的內應力經測定為299psi。 The dielectric is coated on one side of the two flexible copper/bismuth alloy foil test strips so that one side plating can be performed on the uncoated side. > The test strip was adhered to the support substrate with a plating tape and placed in a Harlem tank containing an acid copper plating bath 2. The bath was at room temperature. A copper metal strip is used as the anode. The test foil strip and anode are connected to a rectifier. The test foil strips were copper plated at an average current density of 2 ASD to deposit a 5 [mu]m copper thickness on the uncoated side of each strip. After the plating is completed, the test strip is removed from the Harlem tank, rinsed with a wafer, dried and self-tested by plating tape Remove the strip from the strip. One end of the test strip was inserted into a screw clamp of a sediment stress analyzer. The internal stress of the copper deposit on the strip was determined to be 211 psi. The internal stress can be determined using the equation S=U/3TxK, where S is the stress in psi, U is the incremental number of deflections on the calibration scale, T is the thickness of the deposit in 吋, and K is the test strip Calibration constant. After the test strips were aged for 2 days, the internal stress of each strip was determined to be 299 psi.

亦使用行業標準IPC-TM-650方法進行伸長率測試。在3.8 ASD下將75μm的銅電鍍在不鏽鋼面板上。在電鍍之後將銅膜剝離,並且在125℃下退火4小時。拉力測試在英斯特朗拉力測試儀33R4464上進行。利用浴2所電鍍之銅的伸長率為7%,並且在最大拉伸應力下的荷載僅為50lbf。雖然內應力低,但是銅的延展性不如在包括聚烯丙胺的浴1中高。浴2是習知的酸性銅電鍍浴的實例,其通常電鍍內應力低、然而延展性卻非所要之低的銅膜。 Elongation tests were also performed using the industry standard IPC-TM-650 method. 75 μm copper was electroplated on a stainless steel panel at 3.8 ASD. The copper film was peeled off after electroplating and annealed at 125 ° C for 4 hours. The tensile test was performed on an Instron pull tester 33R4464. The copper plated with bath 2 had an elongation of 7% and a load at maximum tensile stress of only 50 lbf. Although the internal stress is low, the ductility of copper is not as high as in bath 1 including polyallylamine. Bath 2 is an example of a conventional acid copper electroplating bath which typically etches a copper film that has low internal stress but is not as ductile as desired.

實例4(比較) Example 4 (comparative)

將兩個撓性銅/鈹合金箔測試條帶的一側上塗佈介電質,使得能夠在未經塗佈的一側上進行單側電鍍。將所述測試條帶用電鍍膠帶黏貼至支撐基板,並且置於包含在實例1的表中的酸性銅電鍍浴3的哈林槽中。所述浴處於室溫下。銅金屬條帶用作陽極。測試箔條帶及陽極被連接至整流器。所述測試箔條帶以2 ASD的平均電流密度銅電鍍以在每個條帶的未經塗佈側上沈積5μm的銅厚度。在電鍍完成之後,將所述測試條帶自哈林槽中移出,用晶圓沖洗,乾燥並且將電鍍膠帶自測試條帶上移除。將所述測試條帶在一端插入沈積物應力分析儀的螺旋夾具中。銅沈積物在所述條帶上 的內應力經測定為1156psi。內應力可利用方程式S=U/3TxK確定,其中S是以psi為單位的應力,U是在校準刻度上偏轉的遞增數目,T是以吋為單位的沈積物厚度,並且K是測試條帶校準常數。在測試條帶老化2天之後,每個條帶的應力經測定為1734psi。 The dielectric is coated on one side of the two flexible copper/bismuth alloy foil test strips so that one side plating can be performed on the uncoated side. The test strip was adhered to the support substrate with a plating tape, and placed in a Harlem tank containing the acid copper plating bath 3 in the table of Example 1. The bath was at room temperature. A copper metal strip is used as the anode. The test foil strip and anode are connected to a rectifier. The test foil strips were copper plated at an average current density of 2 ASD to deposit a 5 [mu]m copper thickness on the uncoated side of each strip. After the plating is complete, the test strip is removed from the Harlem tank, rinsed with the wafer, dried and the electroplated tape removed from the test strip. The test strip was inserted into the screw holder of the sediment stress analyzer at one end. Copper deposits on the strip The internal stress was determined to be 1156 psi. The internal stress can be determined using the equation S=U/3TxK, where S is the stress in psi, U is the incremental number of deflections on the calibration scale, T is the thickness of the deposit in 吋, and K is the test strip Calibration constant. After the test strips were aged for 2 days, the stress of each strip was determined to be 1734 psi.

亦使用行業標準IPC-TM-650方法進行伸長率測試。在3.8 ASD下將75μm的銅電鍍在不鏽鋼面板上。在電鍍之後將銅膜剝離,並且在125℃下退火4小時。拉力測試在英斯特朗拉力測試儀33R4464上進行。對於來自浴3銅沈積物的伸長率為16%,並且在最大拉伸應力下的荷載為62lbf。雖然對於利用浴3電鍍的銅膜延展性優良,但是內應力超過1000psi,這是差的。浴3是習知的酸性銅電鍍的另一實例,其中內應力高,延展性好。 Elongation tests were also performed using the industry standard IPC-TM-650 method. 75 μm copper was electroplated on a stainless steel panel at 3.8 ASD. The copper film was peeled off after electroplating and annealed at 125 ° C for 4 hours. The tensile test was performed on an Instron pull tester 33R4464. The elongation for copper deposits from bath 3 was 16% and the load at maximum tensile stress was 62 lbf. Although the copper film electroplated with the bath 3 is excellent in ductility, the internal stress exceeds 1000 psi, which is poor. Bath 3 is another example of a conventional acid copper plating in which the internal stress is high and the ductility is good.

實例5(比較) Example 5 (comparative)

將兩個撓性銅/鈹合金箔測試條帶的一側上塗佈介電質,使得能夠在未經塗佈的一側上進行單側電鍍。將所述測試條帶用電鍍膠帶黏貼至支撐基板,並且置於包含類似於浴1的酸性銅電鍍浴的哈林槽中,例外為分支聚伸乙基亞胺置換為0.75ppm的具有Mw=2000g/莫耳並且具有以下通式的線性聚伸乙基亞胺: The dielectric is coated on one side of the two flexible copper/bismuth alloy foil test strips so that one side plating can be performed on the uncoated side. The test strip was adhered to the support substrate with a plating tape and placed in a Harlem tank containing an acid copper electroplating bath similar to bath 1, with the exception that the branching polyethylenimine was replaced by 0.75 ppm with Mw= 2000 g/mol and linear polyethylenimine of the formula:

其中y是使得線性聚伸乙基亞胺的重均分子量為約2000g/莫耳的數字。 Wherein y is a number such that the linear polyethylenimine has a weight average molecular weight of about 2000 g/mole.

銅金屬條帶用作陽極。測試箔條帶及陽極被連接 至整流器。所述測試箔條帶是以2 ASD的平均電流密度銅電鍍以在每個條帶的未經塗佈側上沈積5μm的銅厚度。在電鍍完成之後,將所述測試條帶自哈林槽中移出,用晶圓沖洗,乾燥並且將電鍍膠帶自測試條帶上移除。將所述測試條帶的一端插入沈積物應力分析儀的螺旋夾具中。銅沈積物在所述條帶上的內應力經測定為631psi。內應力可利用方程式S=U/3TxK確定,其中S是以psi為單位的應力,U是在校準刻度上偏轉的遞增數目,T是以吋為單位的沈積物厚度,並且K是測試條帶校準常數。在測試條帶老化2天之後,每個條帶的內應力經測定為1578psi。 A copper metal strip is used as the anode. Test foil strip and anode are connected To the rectifier. The test foil strips were copper plated at an average current density of 2 ASD to deposit a 5 [mu]m copper thickness on the uncoated side of each strip. After the plating is complete, the test strip is removed from the Harlem tank, rinsed with the wafer, dried and the electroplated tape removed from the test strip. One end of the test strip was inserted into a screw clamp of a sediment stress analyzer. The internal stress of the copper deposit on the strip was determined to be 631 psi. The internal stress can be determined using the equation S=U/3TxK, where S is the stress in psi, U is the incremental number of deflections on the calibration scale, T is the thickness of the deposit in 吋, and K is the test strip Calibration constant. After the test strips were aged for 2 days, the internal stress of each strip was determined to be 1578 psi.

亦使用行業標準IPC-TM-650方法進行伸長率測試。在3.8 ASD下將75μm厚的銅膜電鍍在不鏽鋼面板上。在電鍍之後將銅膜剝離,並且在125℃下退火4小時。拉力測試在英斯特朗拉力測試儀33R4464上進行。來自所述浴的銅的伸長率為11.8%,並且在最大拉伸應力下的荷載為78lbf。雖然延展性處於高水準,但是在老化之後內應力超過1000psi,表明浴效能不良。具有直鏈聚伸乙基亞胺的浴4的結果與不包括聚烯丙胺及(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯鉀鹽的組合的銅浴大體上相同。 Elongation tests were also performed using the industry standard IPC-TM-650 method. A 75 μm thick copper film was plated on a stainless steel panel at 3.8 ASD. The copper film was peeled off after electroplating and annealed at 125 ° C for 4 hours. The tensile test was performed on an Instron pull tester 33R4464. The elongation of copper from the bath was 11.8% and the load at maximum tensile stress was 78 lbf. Although the ductility is at a high level, the internal stress exceeds 1000 psi after aging, indicating poor bath performance. The result of bath 4 with linear polyethylenimine and copper not including the combination of polyallylamine and (O-ethyldithiocarbamate)-S-(3-sulfopropyl)-ester potassium salt The bath is generally the same.

Claims (8)

一種酸性銅電鍍浴,其包含一種或多種銅離子源、一種或多種電解質、一種或多種聚烯丙胺、一種或多種(O-乙基二硫基碳酸根)-S-(3-磺丙基)-酯、其酸或其鹼金屬鹽及一種或多種抑制劑。 An acid copper electroplating bath comprising one or more sources of copper ions, one or more electrolytes, one or more polyallylamines, one or more (O-ethyldithiocarbonate)-S-(3-sulfopropyl groups An ester, an acid thereof or an alkali metal salt thereof, and one or more inhibitors. 如申請專利範圍第1項所述的酸性銅電鍍浴,其中所述一種或多種聚烯丙胺具有1000g/mol或更大的重均分子量。 The acid copper electroplating bath according to claim 1, wherein the one or more polyallylamines have a weight average molecular weight of 1000 g/mol or more. 如申請專利範圍第1項所述的酸性銅電鍍浴,其中所述一種或多種聚烯丙胺的含量為1ppm至10ppm。 The acid copper electroplating bath of claim 1, wherein the one or more polyallylamines are present in an amount of from 1 ppm to 10 ppm. 如申請專利範圍第1項所述的酸性銅電鍍浴,其中所述一種或多種(O-乙基二硫基碳酸)-S-(3-磺丙基)-酯、其酸或其鹼金屬鹽的含量為100ppm至300ppm。 The acid copper electroplating bath according to claim 1, wherein the one or more (O-ethyldithiocarbonate)-S-(3-sulfopropyl)-ester, an acid thereof or an alkali metal thereof The salt content is from 100 ppm to 300 ppm. 一種方法,包含:a)使基板與包含一種或多種銅離子源、一種或多種電解質、一種或多種分支聚烯丙胺、一種或多種(O-乙基二硫基碳酸)-S-(3-磺丙基)-酯、其酸或其鹼金屬鹽及一種或多種抑制劑的銅電鍍浴接觸;以及b)利用所述銅電鍍浴在所述基板上電鍍低內應力高延展性的銅。 A method comprising: a) contacting a substrate with one or more sources of copper ions, one or more electrolytes, one or more branched polyallylamines, one or more (O-ethyldithiocarbonate)-S-(3- Contacting a copper electroplating bath of a sulfopropyl)-ester, an acid thereof or an alkali metal salt thereof, and one or more inhibitors; and b) plating a low internal stress, high ductility copper on the substrate using the copper plating bath. 如申請專利範圍第5項所述的方法,其中所述低內應力高延展性銅的厚度為1μm至5mm。 The method of claim 5, wherein the low internal stress and high ductility copper has a thickness of from 1 μm to 5 mm. 如申請專利範圍第5項所述的方法,其中所述基板為撓性電路板、撓性電路天線、REID標籤、電解箔或半導體。 The method of claim 5, wherein the substrate is a flexible circuit board, a flexible circuit antenna, a REID tag, an electrolytic foil, or a semiconductor. 一種銅膜,其具有0psi至950psi的初始內應力及300psi至900psi的老化後內應力以及在50lbf或更大的最大拉 伸應力的負載下8%或更大的伸長率。 A copper film having an initial internal stress of 0 psi to 950 psi and an internal stress after aging of 300 psi to 900 psi and a maximum pull of 50 lbf or more Elongation at 8% or greater under load of tensile stress.
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