TW201641249A - Methods and apparatus for microwave batch curing process - Google Patents

Methods and apparatus for microwave batch curing process Download PDF

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TW201641249A
TW201641249A TW105116568A TW105116568A TW201641249A TW 201641249 A TW201641249 A TW 201641249A TW 105116568 A TW105116568 A TW 105116568A TW 105116568 A TW105116568 A TW 105116568A TW 201641249 A TW201641249 A TW 201641249A
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processing chamber
annular body
volume
lip
openings
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TW105116568A
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沙奇特 萊斯
亞南斯克里許納 朱普迪
慕昆德 桑達拉拉珍
曼朱納斯翰迪納哈里 汎卡塔斯華馬帕
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應用材料股份有限公司
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Abstract

In some embodiments, a process chamber for a microwave batch curing process includes: an annular body having an outer surface and an inner surface defining a central opening of the annular body, wherein the inner surface comprises a plurality of angled surfaces defining a first volume; a first lip extending radially outward from the outer surface of the annular body proximate a first end of the annular body; a second lip extending radially outward from the outer surface of the annular body proximate a second end of the annular body; an exhaust disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the exhaust comprises a plurality of first openings; a plurality of second openings fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports fluidly coupled to the first volume.

Description

用於微波批次固化處理的方法與設備Method and apparatus for microwave batch curing treatment

本揭示的實施例一般有關於微波批次固化處理。Embodiments of the present disclosure generally relate to microwave batch curing processes.

固化(curing)指的是藉由聚合物鏈交聯(cross-linking)而使聚合物材料增韌或硬化。習知固化是由加熱爐固化完成,該加熱爐固化與微波固化相較下發生在較高的溫度。習知的固化通常需要在大於攝氏220度下超過6小時。然而,發明人已觀察到微波固化處理可在小於攝氏200度下在1小時內完成。雖然加熱爐固化相較於微波固化而言較慢,但由於習知固化腔室可處理龐大數量的半導體晶圓,故習知固化腔室的產量比較快的微波固化處理更多。因此發明人相信有必要具有能夠匹配習知固化產量的微波相容批次腔室,而不折衷批次內的固化均勻性。Curing refers to the toughening or hardening of polymeric materials by cross-linking of polymer chains. Conventional curing is accomplished by curing in a furnace that cures at a higher temperature than microwave curing. Conventional curing typically requires more than 6 hours at 220 degrees Celsius. However, the inventors have observed that the microwave curing treatment can be completed in less than one hour at 200 degrees Celsius. Although the oven curing phase is slower than microwave curing, since the conventional curing chamber can handle a large number of semiconductor wafers, it is known that the curing chamber has a faster yield of microwave curing. The inventors therefore believe that it is necessary to have a microwave compatible batch chamber that can match the conventional cure yield without compromising the cure uniformity within the batch.

從而,本發明人已開發了用於微波批次固化處理的改進方法及設備。Thus, the inventors have developed improved methods and apparatus for microwave batch curing processes.

在此提供用於微波批次固化處理的方法及設備。在一些實施例中,用於微波批次固化處理的處理腔室包括:環形主體,該環形主體具有外部表面及內部表面,該內部表面定義了環形主體的中央開口,其中內部表面包括複數個傾斜表面,該等傾斜表面定義了第一體積;第一唇部,該第一唇部在環形主體的第一端點附近從環形主體的外部表面徑向向外延伸;第二唇部,該第二唇部在環形主體的第二端點附近從環形主體的外部表面徑向向外延伸;排氣裝置,該排氣裝置設置在第一唇部及第二唇部之間,並流動地耦合至第一體積,其中排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至第一體積,其中該複數個第二開口經配置以將第一體積暴露於微波能量;及一或更多個端口,該端口流動地耦合到第一體積。Methods and apparatus for microwave batch curing processes are provided herein. In some embodiments, a processing chamber for a microwave batch curing process includes an annular body having an outer surface and an inner surface defining a central opening of the annular body, wherein the inner surface includes a plurality of slopes a surface, the inclined surface defining a first volume; a first lip extending radially outward from an outer surface of the annular body adjacent the first end of the annular body; a second lip, the first a second lip extending radially outward from an outer surface of the annular body adjacent the second end of the annular body; an exhausting device disposed between the first lip and the second lip and fluidly coupled To a first volume, wherein the venting means includes a plurality of first openings; a plurality of second openings fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume At the microwave energy; and one or more ports, the port is fluidly coupled to the first volume.

在一些實施例中,用於微波批次固化處理的處理腔室包括:以堆疊配置的複數個環形主體,其中每個環形主體包括:外部表面及內部表面,該內部表面定義了環形主體的中央開口,其中內部表面包括複數個傾斜表面,該等傾斜表面定義了第一體積;第一唇部,該第一唇部在環形主體的第一端點附近從環形主體的外部表面徑向向外延伸;第二唇部,該第二唇部在環形主體的第二端點附近從環形主體的外部表面徑向向外延伸;排氣裝置,該排氣裝置設置在第一唇部及第二唇部之間,並流動地耦合至第一體積,其中排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至第一體積,其中該複數個第二開口經配置以將第一體積暴露於微波能量;及一或更多個端口,該端口流動地耦合到第一體積。In some embodiments, a processing chamber for a microwave batch curing process includes a plurality of annular bodies configured in a stack, wherein each annular body includes an outer surface and an inner surface defining a center of the annular body An opening, wherein the inner surface includes a plurality of inclined surfaces defining a first volume; a first lip that is radially outward from an outer surface of the annular body adjacent the first end of the annular body Extending; a second lip extending radially outward from an outer surface of the annular body adjacent the second end of the annular body; an exhausting device disposed at the first lip and the second Between the lips, and fluidly coupled to the first volume, wherein the venting means includes a plurality of first openings; a plurality of second openings, the second openings being fluidly coupled to the first volume, wherein the plurality of second The opening is configured to expose the first volume to microwave energy; and one or more ports fluidly coupled to the first volume.

在一些實施例中,執行微波批次固化處理的方法包括以下步驟:將複數個基板提供至處理腔室,該處理腔室包括:環形主體,該環形主體具有外部表面及內部表面,該內部表面定義了環形主體的中央開口,其中內部表面包括複數個傾斜表面,該等傾斜表面定義了第一體積;第一唇部,該第一唇部在環形主體的第一端點附近從環形主體的外部表面徑向向外延伸;第二唇部,該第二唇部在環形主體的第二端點附近從環形主體的外部表面徑向向外延伸;排氣裝置,該排氣裝置設置在第一唇部及第二唇部之間,並流動地耦合至第一體積,其中排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至第一體積,其中該複數個第二開口經配置以將第一體積暴露於微波能量;及一或更多個端口,該端口流動地耦合到第一體積;在設備內形成真空;及將設備內的複數個基板暴露於微波。In some embodiments, a method of performing a microwave batch curing process includes the steps of providing a plurality of substrates to a processing chamber, the processing chamber comprising: an annular body having an outer surface and an inner surface, the inner surface Defining a central opening of the annular body, wherein the inner surface includes a plurality of inclined surfaces defining a first volume; a first lip from the annular body adjacent the first end of the annular body An outer surface extending radially outward; a second lip extending radially outward from an outer surface of the annular body adjacent the second end of the annular body; an exhaust device disposed at the first Between a lip and a second lip, and fluidly coupled to the first volume, wherein the venting means includes a plurality of first openings; a plurality of second openings, the second openings being fluidly coupled to the first volume, Where the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports that are fluidly coupled to the first volume; forming a true ; And a plurality of substrates in the device is exposed to microwaves.

本揭示的其他及進一步的實施例在下方描述。Other and further embodiments of the present disclosure are described below.

在此提供用於改進的微波批次固化處理的方法及裝置。本揭示提供改進的微波批次固化處理設備,該微波批次固化處理設備可與各種微波頻率使用,以用於半導體製程。本揭示的設備實施例可有利地提供以下一或更多個者:均勻地在整個設備上擴散微波;將來自設備的微波洩漏最小化或消除、達到適當的真空條件,或將顆粒的產生最小化或消除。此外,本揭示的設備實施例可在變化數量的基板處理中有利地提供彈性的配置中利用。Methods and apparatus for improved microwave batch curing processes are provided herein. The present disclosure provides an improved microwave batch curing apparatus that can be used with a variety of microwave frequencies for semiconductor processing. Apparatus embodiments of the present disclosure may advantageously provide one or more of: uniformly diffusing microwaves throughout the device; minimizing or eliminating microwave leakage from the device, achieving appropriate vacuum conditions, or minimizing particle generation Or eliminate. Moreover, the device embodiments of the present disclosure may be utilized in an elastic configuration that advantageously provides for varying amounts of substrate processing.

圖1及圖2根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室132之示意圖。處理腔室132包括環形主體100。環形主體具有厚度,該厚度足以用作為微波腔室以及用於組裝及用於批次處理基板,如在此所揭示。在一些實施例中,環形主體100具有大約1英寸的厚度。在一些實施例中,環形主體100具有大約22英寸乘22英寸乘8英寸的外部尺寸,雖然其他尺寸可被使用,例如,當處理具有更小或更大尺寸的基板時。在一些實施例中,環形主體100由鋁構成。例如,在一些實施例中,環形主體100是由alimex材料構成。1 and 2 depict schematic diagrams of a processing chamber 132 for a microwave batch curing process, in accordance with some embodiments of the present disclosure. Processing chamber 132 includes an annular body 100. The annular body has a thickness sufficient for use as a microwave chamber and for assembly and for batch processing of substrates, as disclosed herein. In some embodiments, the annular body 100 has a thickness of approximately 1 inch. In some embodiments, the annular body 100 has an outer dimension of about 22 inches by 22 inches by 8 inches, although other dimensions can be used, for example, when processing substrates having smaller or larger dimensions. In some embodiments, the annular body 100 is constructed of aluminum. For example, in some embodiments, the annular body 100 is constructed of alimex material.

在一些實施例中,處理腔室包括一或更多個冷卻通道,以使冷卻流體(例如,冷卻劑)循環,以在使用期間控制處理腔室的溫度。例如,如圖9所描繪地,在一些實施例中,處理腔室132在環形主體100內包括複數個通道900,以使冷卻流體循環。複數個通道900包括入口902及出口904,以促進(從冷卻流體源提供的)冷卻流體的循環,以防止環形主體100的外部表面不超過預定溫度。在一些實施例中,預定溫度大約為攝氏65度。In some embodiments, the processing chamber includes one or more cooling passages to circulate a cooling fluid (eg, a coolant) to control the temperature of the processing chamber during use. For example, as depicted in FIG. 9, in some embodiments, the processing chamber 132 includes a plurality of channels 900 within the annular body 100 to circulate cooling fluid. The plurality of channels 900 includes an inlet 902 and an outlet 904 to facilitate circulation of cooling fluid (provided from a source of cooling fluid) to prevent the outer surface of the annular body 100 from exceeding a predetermined temperature. In some embodiments, the predetermined temperature is approximately 65 degrees Celsius.

環形主體100包括外部表面102及內部表面104。內部表面104定義在環形主體100的中央開口106。內部表面104包括複數個傾斜表面110,該等傾斜表面定義第一體積112。每個傾斜表面可為平面的,且平行於環形主體100的中心軸。每個傾斜表面可經安排以在每一對相鄰的傾斜表面之間具有相同的包含角度。在固化運作期間,一或更多個基板,例如半導體晶圓或具有將被微波固化的材料之其他基板可被設置在第一體積112內。在一些實施例中,內部表面104具有五個(5)或更多個傾斜表面。在一些實施例中,如圖1至圖3所描繪地,內部表面104具有八個(8)傾斜表面。在一些實施例中,對於具有8個傾斜表面的內部表面104而言,每個傾斜表面110之間的角度105(亦即,在傾斜表面110及相鄰的傾斜表面110之間)大約為135度。在一些實施例中,例如圖8,內部表面104具有十二個(12)傾斜表面。在一些實施例中,對於具有12個傾斜表面的內部表面104而言,每個傾斜表面110之間的角度105(亦即,傾斜表面110及相鄰的傾斜表面之間)大約為150度。發明人觀察到,具有複數個傾斜表面的內部表面104有利地提供微波能量之更均勻的反射及更均勻的分配,不像完全圓形的內部表面,該完全圓形的內部表面將使微波能量聚集在第一體積112的中心。例如,發明人觀察到,具有例如8個傾斜表面或12個傾斜表面的內部表面104之處理腔室132有利地在整個第一體積112上均勻地分配微波,以在第一體積112內提供均勻的基板固化。其他數量的傾斜表面亦可使用,包括超過12個傾斜表面,儘管增加傾斜表面的數量可能開始近似圓形內部表面。The annular body 100 includes an outer surface 102 and an inner surface 104. The inner surface 104 is defined at the central opening 106 of the annular body 100. The inner surface 104 includes a plurality of inclined surfaces 110 that define a first volume 112. Each of the inclined surfaces may be planar and parallel to the central axis of the annular body 100. Each of the inclined surfaces can be arranged to have the same inclusion angle between each pair of adjacent inclined surfaces. One or more substrates, such as semiconductor wafers or other substrates having materials to be microwave cured, may be disposed within the first volume 112 during the curing operation. In some embodiments, the interior surface 104 has five (5) or more inclined surfaces. In some embodiments, as depicted in Figures 1-3, the interior surface 104 has eight (8) sloped surfaces. In some embodiments, for the inner surface 104 having eight inclined surfaces, the angle 105 between each inclined surface 110 (ie, between the inclined surface 110 and the adjacent inclined surface 110) is approximately 135. degree. In some embodiments, such as Figure 8, inner surface 104 has twelve (12) inclined surfaces. In some embodiments, for the inner surface 104 having 12 inclined surfaces, the angle 105 between each inclined surface 110 (ie, between the inclined surface 110 and the adjacent inclined surface) is approximately 150 degrees. The inventors have observed that an inner surface 104 having a plurality of inclined surfaces advantageously provides a more uniform reflection of the microwave energy and a more uniform distribution, unlike a completely circular inner surface that will impart microwave energy. Gathered in the center of the first volume 112. For example, the inventors have observed that a processing chamber 132 having an interior surface 104 having, for example, eight inclined surfaces or twelve inclined surfaces advantageously distributes microwaves evenly throughout the first volume 112 to provide uniformity within the first volume 112. The substrate is cured. Other numbers of inclined surfaces may also be used, including more than 12 inclined surfaces, although increasing the number of inclined surfaces may begin to approximate a circular inner surface.

環形主體100進一步包括第一唇部114(或第一凸緣)及第二唇部118(或第二凸緣)。第一唇部114在環形主體100的第一端點116附近從環形主體100的外部表面102徑向向外延伸。第二唇部118在環形主體100的第二端點120附近從環形主體100的外部表面102徑向向外延伸。The annular body 100 further includes a first lip 114 (or first flange) and a second lip 118 (or second flange). The first lip 114 extends radially outward from the outer surface 102 of the annular body 100 proximate the first end point 116 of the annular body 100. The second lip 118 extends radially outward from the outer surface 102 of the annular body 100 adjacent the second end point 120 of the annular body 100.

在一些實施例中,第一唇部114包括第一槽128,該第一槽設置在第一唇部114的第一表面130內。在一些實施例中,第一槽128是環形的或幾乎環形的。在一些實施例中,第一槽128具有開口,該開口具有大約0.27英寸的寬度。第一槽128經配置以保持密封件,例如O形環或類似的墊片材料,以在多個處理腔室132於堆疊配置時形成密封,如以下關於圖3所描述。在一些實施例中,如圖2所描繪,第二唇部118包括第二槽210,該第二槽設置在第二唇部118的第一表面212內。在一些實施例中,第二槽210是環形的或幾乎環形的。在一些實施例中,第二槽210具有開口,該開口具有大約0.094英寸的寬度。在一些實施例中,第二槽210持有導電墊片,以更穩健地在多個處理腔室132於堆疊配置時使處理腔室132接地,如下方參照圖3描述。In some embodiments, the first lip 114 includes a first slot 128 that is disposed within the first surface 130 of the first lip 114. In some embodiments, the first groove 128 is annular or nearly annular. In some embodiments, the first slot 128 has an opening that has a width of approximately 0.27 inches. The first slot 128 is configured to retain a seal, such as an O-ring or similar gasket material, to form a seal when the plurality of processing chambers 132 are in a stacked configuration, as described below with respect to FIG. In some embodiments, as depicted in FIG. 2, the second lip 118 includes a second slot 210 that is disposed within the first surface 212 of the second lip 118. In some embodiments, the second slot 210 is annular or nearly annular. In some embodiments, the second slot 210 has an opening that has a width of approximately 0.094 inches. In some embodiments, the second slot 210 holds a conductive spacer to more reliably ground the processing chamber 132 when the plurality of processing chambers 132 are in a stacked configuration, as described below with respect to FIG.

環形主體100進一步包括排氣裝置122,該排氣裝置設置在第一唇部114及第二唇部118之間。排氣裝置122流動地耦合至第一體積112。排氣裝置122通常可具有促進足夠流動的任何形狀及尺寸,以在腔室中保持處理參數,例如所期望的壓力。在一些實施例中,如圖1至圖3所描繪地,排氣裝置122可為矩形的,例如,具有大約11英寸乘大約4英寸的尺度。在一些實施例中,如圖8所描繪地,排氣裝置122可為圓形的形狀。排氣裝置122包括複數個第一開口124,該等第一開口流動地耦合到第一體積112。在一些實施例中,該複數個第一開口124的每一個包括小於大約10 mm的直徑。The annular body 100 further includes an exhaust device 122 disposed between the first lip portion 114 and the second lip portion 118. Exhaust device 122 is fluidly coupled to first volume 112. The venting device 122 can generally have any shape and size that promotes sufficient flow to maintain processing parameters, such as desired pressure, in the chamber. In some embodiments, as depicted in Figures 1-3, the venting device 122 can be rectangular, for example, having a dimension of about 11 inches by about 4 inches. In some embodiments, as depicted in Figure 8, the exhaust device 122 can be circular in shape. The exhaust device 122 includes a plurality of first openings 124 that are fluidly coupled to the first volume 112. In some embodiments, each of the plurality of first openings 124 includes a diameter of less than about 10 mm.

處理腔室132適合用於接收變化頻率的微波能量,該微波能量具有小於大約6.9 GHz的頻率,例如大約4.5 GHz至大約6.9 GHz。在一些實施例中,處理腔室132利用4096個頻率,該等頻率在約0.1秒內於大約5.8 GHz至大約6.9 GHz的頻率範圍掃過腔室。發明人觀察到,處理腔室132內任何大於約半個微波波長的開口將不期望地從處理腔室132的開口洩漏出來。   因此,直徑小於大約10 mm的複數個第一開口124有利地從第一體積112內排放氣體,並同時防止微波從第一體積112洩漏。在一些實施例中,第一開口124的數量被選擇以匹配於渦輪泵(未顯示)的導電率,該渦輪泵耦合至處理腔室132以用於抽氣。The processing chamber 132 is adapted to receive microwave energy of varying frequencies having a frequency of less than about 6.9 GHz, such as from about 4.5 GHz to about 6.9 GHz. In some embodiments, the processing chamber 132 utilizes 4096 frequencies that sweep across the chamber in a frequency range of about 5.8 GHz to about 6.9 GHz in about 0.1 seconds. The inventors have observed that any opening in the processing chamber 132 that is greater than about a half of the microwave wavelength will undesirably leak out of the opening of the processing chamber 132. Thus, a plurality of first openings 124 having a diameter of less than about 10 mm advantageously discharge gas from within the first volume 112 while preventing leakage of microwaves from the first volume 112. In some embodiments, the number of first openings 124 is selected to match the conductivity of a turbo pump (not shown) that is coupled to the processing chamber 132 for pumping.

環形主體100進一步包括複數個第二開口126,該第二開口流動地耦合到第一體積112。複數個第二開口126促進微波能量傳遞至第一體積112。例如,每個第二開口126可為矩形的。在一些實施例中,每個第二開口126可包括傾斜側壁,該等傾斜側壁放大了面向第一體積112的開口之側邊上的開口。在一些實施例中,第二開口126沿著內部表面104設置。在一些實施例中,第二開口126沿著內部表面104交錯排列,或間隔開來。例如,在圖1及圖2所描繪的一些實施例中,環形主體100包括兩個第二開口126,其中兩個第二開口126沿著內部表面104彼此相對地設置。例如,在圖8描繪的一些實施例中,環形主體100包括四個第二開口126,其中四個第二開口126的其中兩個沿著內部表面104彼此相對的設置,且第二開口126的另外兩個沿著內部表面104彼此相對設置,但不相對於前兩個第二開口126。例如,每個第二開口126可在環形主體100的周圍等距離地間隔開來(例如,圖8所描繪的實施例中以大約90度分開)。在一些實施例中,例如圖1及圖2所描繪地,每個第二開口126是內部表面104的單一開口。在一些實施例中,例如圖8所描繪地,每個第二開口126在內部表面104處包括複數個開口。The annular body 100 further includes a plurality of second openings 126 that are fluidly coupled to the first volume 112. The plurality of second openings 126 facilitate transfer of microwave energy to the first volume 112. For example, each of the second openings 126 can be rectangular. In some embodiments, each of the second openings 126 can include a sloped sidewall that magnifies an opening on a side of the opening that faces the first volume 112. In some embodiments, the second opening 126 is disposed along the interior surface 104. In some embodiments, the second openings 126 are staggered along the interior surface 104, or spaced apart. For example, in some embodiments depicted in FIGS. 1 and 2, the annular body 100 includes two second openings 126, wherein the two second openings 126 are disposed opposite each other along the interior surface 104. For example, in some embodiments depicted in FIG. 8 , the annular body 100 includes four second openings 126 , wherein two of the four second openings 126 are disposed opposite one another along the interior surface 104 and the second opening 126 The other two are disposed opposite each other along the inner surface 104, but not relative to the first two second openings 126. For example, each of the second openings 126 can be equally spaced around the annular body 100 (eg, separated by approximately 90 degrees in the embodiment depicted in FIG. 8). In some embodiments, such as depicted in FIGS. 1 and 2, each second opening 126 is a single opening of the interior surface 104. In some embodiments, such as depicted in FIG. 8, each second opening 126 includes a plurality of openings at the interior surface 104.

如圖2描繪地,環形主體100包括一或更多個端口200,該端口從外部表面102穿過內部表面104並流動地耦合至第一體積112。在一些實施例中,一或更多個端口200包括直徑小於約10 mm的第一端口202及第二端口204。如上方所述,直徑小於約10 mm可防止微波透過一或更多個端口200而從第一體積112洩漏。As depicted in FIG. 2, the annular body 100 includes one or more ports 200 that pass from the exterior surface 102 through the interior surface 104 and are fluidly coupled to the first volume 112. In some embodiments, one or more ports 200 include a first port 202 and a second port 204 that are less than about 10 mm in diameter. As noted above, a diameter of less than about 10 mm prevents leakage of microwaves from the first volume 112 through the one or more ports 200.

在一些實施例中,如圖2所描繪地,溫度感測器206被設置在第一端口202內,以測量第一體積112內的溫度。圖5描繪了溫度感測器206的示意性剖面圖,該溫度感測器透過第一端口202耦合到環形主體100。In some embodiments, as depicted in FIG. 2, a temperature sensor 206 is disposed within the first port 202 to measure the temperature within the first volume 112. FIG. 5 depicts a schematic cross-sectional view of temperature sensor 206 coupled to annular body 100 through first port 202.

在一些實施例中,如圖2所描繪地,壓力感測器208耦合到環形主體100,以透過第二端口204測量第一體積112內的壓力。圖4描繪壓力感測器208的示意性剖面圖,該壓力感測器透過夾具502耦合到隔離閥500。隔離閥500在第二端口204處耦合到環形主體100。In some embodiments, as depicted in FIG. 2, pressure sensor 208 is coupled to annular body 100 to measure pressure within first volume 112 through second port 204. FIG. 4 depicts a schematic cross-sectional view of a pressure sensor 208 coupled to the isolation valve 500 through a clamp 502. Isolation valve 500 is coupled to annular body 100 at second port 204.

在一些實施例中,如圖3所描繪地,複數個處理腔室132可以堆疊配置耦合。例如,如圖3所描繪地,兩個處理腔室132可以堆疊配置耦合。在一些實施例中,如圖3所描繪地,頂部主體300的第二唇部118耦合到底部主體302的第一唇部114。在一些實施例中,頂部主體300透過合適的固定器(例如螺栓或螺絲)耦合至底部主體302。在圖3所描繪的堆疊配置中,頂部主體300的第一體積112流動地耦合到底部主體302的第一體積112。每個主體的第一體積112可持有例如高達約10個半導體晶圓或其他合適的基板。發明人觀察到,處理腔室的可堆疊配置,如圖3所描繪地,有利地提供處理批次晶圓的能力,並藉由相應地增加或減少處理腔室體積而提供選擇將被處理的基板數量之彈性。處理腔室體積的彈性允許基板循環時間的最佳化,該基板循環時間取決於基板負載。堆疊配置中的最頂部處理腔室,例如圖3中的頂部主體300,包括上蓋304以密封第一體積112。最頂部處理腔室具有上蓋304,該上蓋設置在處理腔室之上,以密封第一體積112。In some embodiments, as depicted in FIG. 3, a plurality of processing chambers 132 can be coupled in a stacked configuration. For example, as depicted in FIG. 3, the two processing chambers 132 can be coupled in a stacked configuration. In some embodiments, as depicted in FIG. 3, the second lip 118 of the top body 300 is coupled to the first lip 114 of the bottom body 302. In some embodiments, the top body 300 is coupled to the bottom body 302 by a suitable fixture, such as a bolt or screw. In the stacked configuration depicted in FIG. 3, the first volume 112 of the top body 300 is fluidly coupled to the first volume 112 of the bottom body 302. The first volume 112 of each body can hold up to, for example, up to about 10 semiconductor wafers or other suitable substrates. The inventors have observed that the stackable configuration of the processing chamber, as depicted in Figure 3, advantageously provides the ability to process batch wafers and provides a choice to be processed by correspondingly increasing or decreasing the processing chamber volume accordingly. The elasticity of the number of substrates. The flexibility of the processing chamber volume allows for optimization of the substrate cycle time, which depends on the substrate loading. The topmost processing chamber in the stacked configuration, such as top body 300 in FIG. 3, includes an upper cover 304 to seal the first volume 112. The topmost processing chamber has an upper cover 304 disposed above the processing chamber to seal the first volume 112.

在一些實施例中,如上方所述的一或更多個處理腔室可堆疊在基板傳送設備610之上,以用於傳送複數個基板進入及離開處理腔室。例如,圖6A及圖6B描繪基板傳送設備610,該基板傳送設備具有下部腔室600。如圖6A所描繪地,下部腔室600持有複數個基板602。在一些實施例中,複數個基板602在堆疊配置中彼此平行對準。如上方所描述的一或更多個處理腔室設置在下部腔室600之上。In some embodiments, one or more processing chambers as described above may be stacked over the substrate transfer apparatus 610 for transporting a plurality of substrates into and out of the processing chamber. For example, Figures 6A and 6B depict a substrate transfer apparatus 610 having a lower chamber 600. As depicted in Figure 6A, the lower chamber 600 holds a plurality of substrates 602. In some embodiments, the plurality of substrates 602 are aligned in parallel with each other in a stacked configuration. One or more processing chambers as described above are disposed above the lower chamber 600.

一或更多個處理腔室608的最頂部處理腔室具有上蓋304,該上蓋設置在處理腔室之上,以利用上方關於圖3所探討的方式密封第一體積112。雖然圖6A及圖6B描繪三個處理腔室608如上方所述地在下部腔室600上方堆疊對準,但多於或少於三個處理腔室608可取決於將被處理的基板數量而利用。The topmost processing chamber of one or more processing chambers 608 has an upper cover 304 disposed over the processing chamber to seal the first volume 112 in a manner as discussed above with respect to FIG. Although FIGS. 6A and 6B depict three process chambers 608 stacked and aligned above the lower chamber 600 as described above, more or less than three process chambers 608 may depend on the number of substrates to be processed. use.

如圖6B中所描繪地,複數個基板602可定位在一或更多個處理腔室608的第一體積112內。升舉機制604被提供以將複數個基板602從下部腔室600升高一或更多個處理腔室608的第一體積112中。升舉機制604可為任何適當的升舉機制,例如致動器、馬達或類者。在一些實施例中,升舉機制耦合到基板支座612,該基板支座可設置在下部腔室600或移動到一或更多個處理腔室608的內部體積中。複數個可移動支座614可移動地耦合到基板傳送設備610的側壁616。複數個臂618具有第一端點及第二端點,該第一端點耦合至基板支座612,該第二端點耦合至可移動支座614。可移動支座614沿著基板傳送設備610的側壁616線性移動,以透過複數個臂618升高或降低基板支座612。一旦複數個基板602升高至第一體積112中,耦合到基板支座612的下部板材606從第一體積112密封下部腔室600的體積,以防止微波洩漏,並在第一體積112中維持預定的壓力。下部板材606對著適配器613對接,使得下部板材606及適配器613之間沒有縫隙或微小縫隙,因此密封了第一體積112。適配器613耦合到下部腔室600的內部表面。圖11描繪下部板材606及適配器613形成密封以防止微波逃離並在第一體積112中保持預定壓力的示意圖。如圖11所描繪地,下部板材606包括第一部分1102,該第一部分與適配器的第一部分1104形成密封。下部板材606進一步包括邊緣部分1106,該邊緣部分具有環形開口1114,例如具有預定寬度的槽或溝槽。環形開口1114包括一或更多個突部1108,該突部從環形開口1114的表面1110朝向適配器的表面1112延伸離開。在一些實施例中,多個突部1108可由預定大小的縫隙(未顯示)分離。在一些實施例中,突部1108可垂直於環形開口1114的表面1110延伸。在一些實施例中,突部1108可對著環形開口1114的表面1110以預定的角度延伸。As depicted in FIG. 6B, a plurality of substrates 602 can be positioned within the first volume 112 of one or more processing chambers 608. A lift mechanism 604 is provided to raise a plurality of substrates 602 from the lower chamber 600 into the first volume 112 of one or more processing chambers 608. The lift mechanism 604 can be any suitable lift mechanism, such as an actuator, motor, or the like. In some embodiments, the lift mechanism is coupled to a substrate support 612 that can be disposed in the lower chamber 600 or moved into the interior volume of the one or more processing chambers 608. A plurality of movable mounts 614 are movably coupled to the side walls 616 of the substrate transfer apparatus 610. The plurality of arms 618 have a first end point coupled to the substrate support 612 and a second end end coupled to the movable mount 614. The movable mount 614 moves linearly along the sidewall 616 of the substrate transfer apparatus 610 to raise or lower the substrate support 612 through the plurality of arms 618. Once the plurality of substrates 602 are raised into the first volume 112, the lower plate 606 coupled to the substrate support 612 seals the volume of the lower chamber 600 from the first volume 112 to prevent microwave leakage and is maintained in the first volume 112. Scheduled pressure. The lower sheet 606 is butted against the adapter 613 such that there are no gaps or small gaps between the lower sheet 606 and the adapter 613, thus sealing the first volume 112. The adapter 613 is coupled to an interior surface of the lower chamber 600. FIG. 11 depicts a schematic view of the lower sheet material 606 and adapter 613 forming a seal to prevent microwaves from escaping and maintaining a predetermined pressure in the first volume 112. As depicted in Figure 11, the lower sheet 606 includes a first portion 1102 that forms a seal with the first portion 1104 of the adapter. The lower sheet 606 further includes an edge portion 1106 having an annular opening 1114, such as a groove or groove having a predetermined width. The annular opening 1114 includes one or more protrusions 1108 that extend away from the surface 1110 of the annular opening 1114 toward the surface 1112 of the adapter. In some embodiments, the plurality of protrusions 1108 can be separated by a slit of a predetermined size (not shown). In some embodiments, the protrusion 1108 can extend perpendicular to the surface 1110 of the annular opening 1114. In some embodiments, the protrusion 1108 can extend at a predetermined angle against the surface 1110 of the annular opening 1114.

圖10根據本揭示的一些實施例描繪用於微波批次固化處理的多個處理腔室設備1000的示意圖。圖10描繪如上方所述的一或更多個處理腔室1004,該處理腔室堆疊在基板傳送設備610之上,以用於傳送複數個基板進入及離開處理腔室。基板傳送設備610包括下部腔室600,以持有複數個基板602。如上方關於圖6B所解釋地,複數個基板602可從下部腔室600傳送至一或更多個腔室1004的第一體積112。一或更多個腔室1004的最頂部處理腔室1004具有上蓋304,該上蓋設置在處理腔室1004之上以利用上方關於圖3探討的方式密封第一體積112。雖然圖10如上方所述地描繪三個處理腔室1004在下部腔室600上方堆疊對凖,但多於或少於三個處理腔室1004可取決於將被處理的基板數量而利用。圖10進一步描繪排氣系统1002,該排氣系統1002耦合至每個處理腔室1004的排氣裝置122。Figure 10 depicts a schematic diagram of a plurality of processing chamber devices 1000 for microwave batch curing processes, in accordance with some embodiments of the present disclosure. 10 depicts one or more processing chambers 1004 as described above stacked on a substrate transfer apparatus 610 for transporting a plurality of substrates into and out of the processing chamber. The substrate transfer apparatus 610 includes a lower chamber 600 to hold a plurality of substrates 602. As explained above with respect to FIG. 6B, a plurality of substrates 602 can be transferred from the lower chamber 600 to the first volume 112 of the one or more chambers 1004. The topmost processing chamber 1004 of one or more chambers 1004 has an upper cover 304 disposed over the processing chamber 1004 to seal the first volume 112 in a manner discussed above with respect to FIG. Although FIG. 10 depicts three processing chambers 1004 stacked above the lower chamber 600 as described above, more or less than three processing chambers 1004 may be utilized depending on the number of substrates to be processed. FIG. 10 further depicts an exhaust system 1002 coupled to an exhaust device 122 of each processing chamber 1004.

圖7根據本揭示的一些實施例描繪用於執行微波批次固化處理的方法700的流程圖。在702,如圖6A及圖6B所描繪地,複數個基板602被提供至一或更多個處理腔室608的第一體積112,該處理腔室以堆疊對準並具有上述特徵。如圖6A至圖6B所描繪地,複數個基板602可透過升舉機制604而從下部腔室600提供至處理腔室608的第一體積112中。接著在704,藉由透過排氣裝置122排出氣體而在第一體積112內形成真空。接著在706,第一體積112內的複數個基板602以適量的時間暴露於微波能量,以經受微波固化處理。如上方所描述地,內部表面104的傾斜角度有利地提供微波能量的均勻反射及均勻分佈,以固化複數個基板602。固化處理後,複數個基板602從第一體積112下降到下部腔室600中,並被移除以用於進一步的半導體製程。FIG. 7 depicts a flow diagram of a method 700 for performing a microwave batch curing process, in accordance with some embodiments of the present disclosure. At 702, as depicted in Figures 6A and 6B, a plurality of substrates 602 are provided to a first volume 112 of one or more processing chambers 608 that are aligned in a stack and have the features described above. As depicted in FIGS. 6A-6B, a plurality of substrates 602 can be provided from the lower chamber 600 to the first volume 112 of the processing chamber 608 through the lift mechanism 604. Next, at 704, a vacuum is created within the first volume 112 by exhausting gas through the exhaust device 122. Next, at 706, the plurality of substrates 602 within the first volume 112 are exposed to microwave energy for a suitable amount of time to undergo a microwave curing process. As described above, the angle of inclination of the interior surface 104 advantageously provides for uniform reflection and uniform distribution of microwave energy to cure a plurality of substrates 602. After the curing process, a plurality of substrates 602 are lowered from the first volume 112 into the lower chamber 600 and removed for further semiconductor processing.

雖然前述內容是針對本揭示的實施例,但本揭示的其他及進一步的實施例可在不背離本揭示的基本範疇的情況下被設計。While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the disclosure.

100‧‧‧環形主體
102‧‧‧外部表面
104‧‧‧內部表面
105‧‧‧角度
106‧‧‧中央開口
110‧‧‧傾斜表面
112‧‧‧第一體積
114‧‧‧第一唇部
116‧‧‧第一端點
118‧‧‧第二唇部
120‧‧‧第二端點
122‧‧‧排氣裝置
124‧‧‧第一開口
126‧‧‧第二開口
128‧‧‧第一槽
130‧‧‧第一表面
132‧‧‧處理腔室
200‧‧‧端口
202‧‧‧第一端口
204‧‧‧第二端口
206‧‧‧溫度感測器
208‧‧‧壓力感測器
210‧‧‧第二槽
212‧‧‧第一表面
300‧‧‧頂部主體
302‧‧‧底部主體
304‧‧‧上蓋
500‧‧‧隔離閥
502‧‧‧夾具
600‧‧‧下部腔室
602‧‧‧基板
604‧‧‧升舉機制
606‧‧‧下部板材
608‧‧‧處理腔室
610‧‧‧基板傳送設備
612‧‧‧基板支座
613‧‧‧適配器
614‧‧‧可移動支座
616‧‧‧側壁
618‧‧‧臂
700‧‧‧方法
702‧‧‧步驟
704‧‧‧步驟
706‧‧‧步驟
900‧‧‧通道
902‧‧‧入口
904‧‧‧出口
1000‧‧‧處理腔室設備
1002‧‧‧排氣系统
1004‧‧‧處理腔室
1102‧‧‧第一部分
1104‧‧‧第一部分
1106‧‧‧邊緣部分
1108‧‧‧突部
1110‧‧‧表面
1112‧‧‧表面
1114‧‧‧環形開口
100‧‧‧ ring body
102‧‧‧External surface
104‧‧‧Internal surface
105‧‧‧ Angle
106‧‧‧Central opening
110‧‧‧Sloping surface
112‧‧‧First volume
114‧‧‧First lip
116‧‧‧First Endpoint
118‧‧‧Second lip
120‧‧‧second endpoint
122‧‧‧Exhaust device
124‧‧‧ first opening
126‧‧‧ second opening
128‧‧‧first slot
130‧‧‧ first surface
132‧‧‧Processing chamber
200‧‧‧port
202‧‧‧First port
204‧‧‧Second port
206‧‧‧temperature sensor
208‧‧‧pressure sensor
210‧‧‧second trough
212‧‧‧ first surface
300‧‧‧Top subject
302‧‧‧ bottom body
304‧‧‧上盖
500‧‧‧Isolation valve
502‧‧‧ fixture
600‧‧‧lower chamber
602‧‧‧Substrate
604‧‧‧ Lifting mechanism
606‧‧‧lower plate
608‧‧‧Processing chamber
610‧‧‧Substrate transfer equipment
612‧‧‧Substrate support
613‧‧‧Adapter
614‧‧‧ movable support
616‧‧‧ side wall
618‧‧‧ Arm
700‧‧‧ method
702‧‧‧Steps
704‧‧‧Steps
706‧‧‧Steps
900‧‧‧ channel
902‧‧‧ entrance
904‧‧‧Export
1000‧‧‧Processing chamber equipment
1002‧‧‧Exhaust system
1004‧‧‧Processing chamber
1102‧‧‧Part 1
1104‧‧‧Part 1
1106‧‧‧Edge section
1108‧‧‧ protrusion
1110‧‧‧ surface
1112‧‧‧ surface
1114‧‧‧Circular opening

以上簡要概括並在下方更詳細探討的本揭示之實施例可參考附圖中描繪的本揭示之例示性實施例來理解。然而,附圖僅繪示本揭示的典型實施例,且因此不應被認為是限制範疇的,因為本揭示可承認其他同等有效的實施例。The embodiments of the present disclosure, which are briefly summarized above and discussed in more detail below, may be understood by reference to the exemplary embodiments of the present disclosure. However, the drawings are merely illustrative of typical embodiments of the present disclosure and are therefore not to be considered as limiting.

圖1根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室之示意圖。1 depicts a schematic diagram of a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖2根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室之示意圖。2 depicts a schematic diagram of a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖3根據本揭示的一些實施例描繪用於微波批次固化處理的兩個處理腔室之示意圖。3 depicts a schematic diagram of two processing chambers for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖4根據本揭示的一些實施例描繪壓力感測器的示意圖,該壓力感測器耦合至用於微波批次固化處理的處理腔室。4 depicts a schematic diagram of a pressure sensor coupled to a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖5根據本揭示的一些實施例描繪溫度感測器的示意圖,該溫度感測器耦合至用於微波批次固化處理的處理腔室。5 depicts a schematic diagram of a temperature sensor coupled to a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖6A至圖6B根據本揭示的一些實施例分別描繪用於微波批次固化處理的多個處理腔室之示意性側視圖。6A-6B depict schematic side views of a plurality of processing chambers for microwave batch curing processes, respectively, in accordance with some embodiments of the present disclosure.

圖7根據本揭示的一些實施例描繪用於執行微波批次固化處理的方法之流程圖。7 depicts a flow chart of a method for performing a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖8根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室之示意圖。8 depicts a schematic diagram of a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖9根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室之剖面圖。9 depicts a cross-sectional view of a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

圖10根據本揭示的一些實施例描繪用於微波批次固化處理的多個處理腔室設備之示意圖。Figure 10 depicts a schematic diagram of a plurality of processing chamber devices for microwave batch curing processes, in accordance with some embodiments of the present disclosure.

圖11根據本揭示的一些實施例描繪用於微波批次固化處理的處理腔室之剖面圖。11 depicts a cross-sectional view of a processing chamber for a microwave batch curing process, in accordance with some embodiments of the present disclosure.

為了促成理解,相同的參考符號在可能的地方被用來指定圖式中共有的相同元件。圖式並未按比例繪製,且可能為了清晰而被簡化。一個實施例中的元件及特徵可在沒有進一步闡述下而有益地併入其他實施例。To facilitate understanding, the same reference symbols are used where possible to designate the same elements that are common in the drawings. The drawings are not drawn to scale and may be simplified for clarity. The elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無Domestic deposit information (please note according to the order of the depository, date, number)

國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Foreign deposit information (please note in the order of country, organization, date, number)

(請換頁單獨記載) 無(Please change the page separately) No

100‧‧‧環形主體 100‧‧‧ ring body

102‧‧‧外部表面 102‧‧‧External surface

104‧‧‧內部表面 104‧‧‧Internal surface

105‧‧‧角度 105‧‧‧ Angle

106‧‧‧中央開口 106‧‧‧Central opening

110‧‧‧傾斜表面 110‧‧‧Sloping surface

112‧‧‧第一體積 112‧‧‧First volume

114‧‧‧第一唇部 114‧‧‧First lip

116‧‧‧第一端點 116‧‧‧First Endpoint

118‧‧‧第二唇部 118‧‧‧Second lip

120‧‧‧第二端點 120‧‧‧second endpoint

122‧‧‧排氣裝置 122‧‧‧Exhaust device

124‧‧‧第一開口 124‧‧‧ first opening

126‧‧‧第二開口 126‧‧‧ second opening

128‧‧‧第一槽 128‧‧‧first slot

130‧‧‧第一表面 130‧‧‧ first surface

132‧‧‧處理腔室 132‧‧‧Processing chamber

Claims (20)

一種用於一微波批次固化處理的處理腔室,該處理腔室包括: 一環形主體,該環形主體具有一外部表面及一內部表面,該內部表面定義了該環形主體的一中央開口,其中該內部表面包括複數個傾斜表面,該等傾斜表面定義了一第一體積;一第一唇部,該第一唇部在該環形主體的一第一端點附近從該環形主體的該外部表面徑向向外延伸;一第二唇部,該第二唇部在該環形主體的一第二端點附近從該環形主體的該外部表面徑向向外延伸;一排氣裝置,該排氣裝置設置在該第一唇部及該第二唇部之間,並流動地耦合至該第一體積,其中該排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至該第一體積,其中該複數個第二開口經配置以將該第一體積暴露於微波能量;及一或更多個端口,該端口流動地耦合到該第一體積。A processing chamber for a microwave batch curing process, the processing chamber comprising: an annular body having an outer surface and an inner surface defining a central opening of the annular body, wherein The inner surface includes a plurality of inclined surfaces defining a first volume; a first lip from the outer surface of the annular body adjacent a first end of the annular body Extending radially outward; a second lip extending radially outward from the outer surface of the annular body adjacent a second end of the annular body; an exhaust device, the exhaust a device disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the venting device includes a plurality of first openings; a plurality of second openings, the second openings Fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports that are fluidly coupled to the first volume. 如請求項1所述之處理腔室,其中該內部表面包括8個傾斜表面。The processing chamber of claim 1 wherein the interior surface comprises eight inclined surfaces. 如請求項1所述之處理腔室,其中該內部表面包括12個傾斜表面。The processing chamber of claim 1 wherein the interior surface comprises 12 inclined surfaces. 如請求項1所述之處理腔室,其中該環形主體具有大約為1英寸的一厚度。The processing chamber of claim 1 wherein the annular body has a thickness of about 1 inch. 如請求項1所述之處理腔室,其中該環形主體包括鋁。The processing chamber of claim 1 wherein the annular body comprises aluminum. 如請求項1所述之處理腔室,其中該複數個第一開口包括小於大約10 mm的一直徑。The processing chamber of claim 1, wherein the plurality of first openings comprise a diameter of less than about 10 mm. 如請求項1所述之處理腔室,其中該一或更多個端口包括一第一端口及一第二端口,該第一端口及該第二端口具有小於大約10 mm的一直徑。The processing chamber of claim 1, wherein the one or more ports comprise a first port and a second port, the first port and the second port having a diameter of less than about 10 mm. 如請求項7所述之處理腔室,進一步包括一溫度感測器,該溫度感測器設置在該第一端口內。The processing chamber of claim 7, further comprising a temperature sensor disposed within the first port. 如請求項7所述之處理腔室,進一步包括一壓力感測器,該壓力感測器設置在該第二端口內。The processing chamber of claim 7, further comprising a pressure sensor disposed within the second port. 如請求項1所述之處理腔室,進一步包括一第一槽,該第一槽設置在該第一唇部的一第一表面內。The processing chamber of claim 1, further comprising a first groove disposed in a first surface of the first lip. 如請求項1所述之處理腔室,進一步包括一第二槽,該第二槽設置在該第二唇部的一第一表面內。The processing chamber of claim 1, further comprising a second groove disposed in a first surface of the second lip. 如請求項1所述之處理腔室,進一步包括複數個通道,該複數個通道位於該環形主體內且經配置以使一冷卻流體循環。The processing chamber of claim 1 further comprising a plurality of channels located within the annular body and configured to circulate a cooling fluid. 一種用於一微波批次固化處理的處理腔室,該處理腔室包括: 複數個環形主體,該等環形主體以一堆疊配置,其中每個環形主體包括:一外部表面及一內部表面,該內部表面定義了該環形主體的一中央開口,其中該內部表面包括複數個傾斜表面,該等傾斜表面定義了一第一體積;一第一唇部,該第一唇部在該環形主體的一第一端點附近從該環形主體的該外部表面徑向向外延伸;一第二唇部,該第二唇部在該環形主體的一第二端點附近從該環形主體的該外部表面徑向向外延伸;一排氣裝置,該排氣裝置設置在該第一唇部及該第二唇部之間,並流動地耦合至該第一體積,其中該排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至該第一體積,其中該複數個第二開口經配置以將該第一體積暴露於微波能量;及 一或更多個端口,該端口流動地耦合到該第一體積。A processing chamber for a microwave batch curing process, the processing chamber comprising: a plurality of annular bodies arranged in a stack, wherein each annular body comprises: an outer surface and an inner surface, The inner surface defines a central opening of the annular body, wherein the inner surface includes a plurality of inclined surfaces defining a first volume; a first lip having a first lip at the annular body A first end portion extends radially outward from the outer surface of the annular body; a second lip portion from the outer surface of the annular body near a second end of the annular body Extending outwardly; an exhausting device disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the exhausting device comprises a plurality of first An opening; a plurality of second openings fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports, Port fluidly coupled to the first volume. 如請求項13所述之處理腔室,其中該內部表面包括8個傾斜表面。The processing chamber of claim 13 wherein the interior surface comprises eight inclined surfaces. 如請求項13所述之處理腔室,其中該內部表面包括12個傾斜表面。The processing chamber of claim 13 wherein the interior surface comprises 12 inclined surfaces. 如請求項13所述之處理腔室,其中該複數個第一開口包括小於大約10 mm的一直徑。The processing chamber of claim 13 wherein the plurality of first openings comprise a diameter of less than about 10 mm. 如請求項13所述之處理腔室,其中該一或更多個端口包括一第一端口及一第二端口,該第一端口及該第二端口具有小於大約10 mm的一直徑。The processing chamber of claim 13 wherein the one or more ports comprise a first port and a second port, the first port and the second port having a diameter of less than about 10 mm. 如請求項17所述之處理腔室,進一步包括一溫度感測器及一壓力感測器,該溫度感測器設置在該第一端口內,該壓力感測器設置在該第二端口內。The processing chamber of claim 17, further comprising a temperature sensor and a pressure sensor, the temperature sensor being disposed in the first port, the pressure sensor being disposed in the second port . 一種用於執行一微波批次固化處理的方法,該方法包括以下步驟: 將複數個基板插入至一處理腔室,該處理腔室包括:一環形主體,該環形主體具有一外部表面及一內部表面,該內部表面定義了該環形主體的一中央開口,其中該內部表面包括複數個傾斜表面,該等傾斜表面定義了一第一體積;一第一唇部,該第一唇部在該環形主體的一第一端點附近從該環形主體的該外部表面徑向向外延伸;一第二唇部,該第二唇部在該環形主體的一第二端點附近從該環形主體的該外部表面徑向向外延伸;一排氣裝置,該排氣裝置設置在該第一唇部及該第二唇部之間,並流動地耦合至該第一體積,其中該排氣裝置包括複數個第一開口;複數個第二開口,該等第二開口流動地耦合至該第一體積,其中該複數個第二開口經配置以將該第一體積暴露於微波能量;及一或更多個端口,該端口流動地耦合到該第一體積; 在該處理腔室內形成真空;及 將該處理腔室內的該複數個基板暴露於微波。A method for performing a microwave batch curing process, the method comprising the steps of: inserting a plurality of substrates into a processing chamber, the processing chamber comprising: an annular body having an outer surface and an inner portion a surface defining a central opening of the annular body, wherein the inner surface includes a plurality of inclined surfaces defining a first volume; a first lip, the first lip being in the ring A first end of the body extends radially outward from the outer surface of the annular body; a second lip from the annular body adjacent the second end of the annular body An outer surface extending radially outwardly; an exhausting device disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the exhausting device comprises a plurality of a first opening; a plurality of second openings, the second openings being fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more a plurality of ports fluidly coupled to the first volume; forming a vacuum within the processing chamber; and exposing the plurality of substrates within the processing chamber to microwaves. 如請求項19所述之方法,其中該內部表面具有五個或更多個傾斜表面。The method of claim 19, wherein the inner surface has five or more inclined surfaces.
TW105116568A 2015-05-27 2016-05-27 Methods and apparatus for microwave batch curing process TW201641249A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113994461A (en) * 2019-05-28 2022-01-28 应用材料公司 Embedded microwave batch degassing cavity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113994461A (en) * 2019-05-28 2022-01-28 应用材料公司 Embedded microwave batch degassing cavity

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