TW201638839A - Calibration system and calibration method for induction key - Google Patents

Calibration system and calibration method for induction key Download PDF

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TW201638839A
TW201638839A TW104114007A TW104114007A TW201638839A TW 201638839 A TW201638839 A TW 201638839A TW 104114007 A TW104114007 A TW 104114007A TW 104114007 A TW104114007 A TW 104114007A TW 201638839 A TW201638839 A TW 201638839A
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magnetic field
field strength
strength value
low frequency
frequency signal
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TW104114007A
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TWI536271B (en
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林育宗
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鴻海精密工業股份有限公司
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Abstract

A calibration system applied for induction key can include a signal source and a computing device. The signal source can be configured to generate low-frequency signal and magnetic field. The induction key can be configured to receive and transmit the low-frequency signal and the magnetic field information to the computing device. The computing device can be configured to achieving a strength value of the magnetic field from the magnetic field information, and generate an error compensation algorithm via the strength value of the magnetic field and a standard strength value of the magnetic field. The computing device can be further configured to transmit the error compensation algorithm to the induction key. The induction key can be capable of correcting a new arriving strength value of the magnetic field via the error compensation algorithm, when the induction key receives the new arriving strength value of the magnetic field.

Description

感應鑰匙校正系統及校正方法Induction key correction system and correction method

本發明涉及一種感應鑰匙校正系統及校正方法。The invention relates to an inductive key correction system and a calibration method.

基於人們對汽車安全保護方面要求之提高,PKE(Passive Keyless Entry,被動無匙進入)技術應運而生。先前之PEK系統中,駕駛員需要通過按鈕來遙控開、鎖車門等功能,使用新型PKE系統,駕駛員無須進行任何操作,只需隨身攜帶一感應鑰匙。Based on the improvement of people's requirements for car safety protection, PKE (Passive Keyless Entry) technology came into being. In the previous PEK system, the driver needed to remotely open and lock the door through buttons. With the new PKE system, the driver did not need to perform any operation, and only needed to carry a sensor key with him.

當駕駛者進入指定範圍時,PEK感應鑰匙能夠感測汽車發出之低頻低頻信號,並將低頻信號經過認證處理後通過UHF高頻信號發射器發回給汽車以實現開、鎖車門等功能。為了保證PKE感應鑰匙之電池壽命不至於在短時間內過度消耗,其只有接受到具有足夠之磁場強度之低頻低頻信號時才能被喚醒。因此,感應鑰匙對低頻信號磁場之感應穩定性及準確性顯得尤為重要,然而,由於受硬體設計架構之影響,PKE感應鑰匙之磁場感應常會出現偏差,導致對汽車發出之低頻信號感應不穩定,出現誤操作。When the driver enters the specified range, the PEK sensor can sense the low-frequency low-frequency signal emitted by the car, and the low-frequency signal is authenticated and sent back to the car through the UHF high-frequency signal transmitter to realize the functions of opening and closing the door. In order to ensure that the battery life of the PKE sensor key is not excessively consumed in a short time, it can only be awakened when it receives a low frequency low frequency signal with sufficient magnetic field strength. Therefore, the sensing key is particularly important for the stability and accuracy of the low-frequency signal magnetic field. However, due to the influence of the hardware design structure, the magnetic field sensing of the PKE sensing key often deviates, resulting in unstable low-frequency signal to the car. , a misoperation occurred.

鑒於以上內容,有必要提供一種感應鑰匙校正系統及校正方法,以提高感應鑰匙對信號感應之準確性及穩定性。In view of the above, it is necessary to provide an inductive key correction system and a correction method to improve the accuracy and stability of the induction key to the signal.

一種感應鑰匙校正系統,其應用於感應鑰匙、信號源及運算裝置上;所述感應鑰匙包括第一存儲單元、低頻接收單元、高頻發射單元和處理單元;所述信號源包括第二存儲單元及低頻發射單元;所述運算裝置包括第三存儲單元、傳輸單元及運算單元,所述第三存儲單元預設存儲第一標準磁場強度及第二標準磁場強度;所述感應鑰匙校正系統包括:An inductive key correction system is applied to an inductive key, a signal source, and an arithmetic device; the inductive key includes a first storage unit, a low frequency receiving unit, a high frequency transmitting unit, and a processing unit; and the signal source includes a second storage unit And the low-frequency transmitting unit; the computing device includes a third storage unit, a transmitting unit, and an arithmetic unit, wherein the third storage unit presets a first standard magnetic field strength and a second standard magnetic field strength; the inductive key correction system includes:

低頻發射控制模塊,用於控制所述低頻發射單元依次發送第一低頻信號及第二低頻信號,所述第一低頻信號包含所述第一標準磁場強度值,所述第二低頻信號包含所述第二標準磁場強度值;所述第一標準磁場強度值與所述第二標準磁場強度值不相同;所述感應鑰匙依次接收所述第一低頻信號及所述第二低頻信號,並識別接收到之所述第一低頻信號之磁場強度為第一接收磁場強度值,且識別接收到之所述第二低頻信號之磁場強度為第二接收磁場強度值;a low frequency transmission control module, configured to control the low frequency transmitting unit to sequentially transmit a first low frequency signal and a second low frequency signal, wherein the first low frequency signal includes the first standard magnetic field strength value, and the second low frequency signal includes the a second standard magnetic field strength value; the first standard magnetic field strength value is different from the second standard magnetic field strength value; the sensing key sequentially receives the first low frequency signal and the second low frequency signal, and identifies and receives The magnetic field strength of the first low frequency signal is the first received magnetic field strength value, and the magnetic field strength of the received second low frequency signal is the second received magnetic field strength value;

高頻發射控制模塊,用於控制所述高頻發射單元依次發送第一高頻信號及第二高頻信號,所述第一高頻信號及所述第二高頻信號分別包含所述第一接收磁場強度值及所述第二接收磁場強度值;a high frequency emission control module, configured to control the high frequency transmitting unit to sequentially transmit the first high frequency signal and the second high frequency signal, wherein the first high frequency signal and the second high frequency signal respectively comprise the first Receiving a magnetic field strength value and the second received magnetic field strength value;

分析運算模塊,用於控制所述運算單元依次讀取所述第一標準磁場強度值及所述第一接收磁場強度值,及所述第二標準磁場強度值及所述第二接收磁場強度值;並計算出補償所述低頻接收單元所接收之接收磁場強度值及所述低頻發射單元所發射之標準磁場強度值間之誤差所需要之誤差補償演算法;及An analysis operation module, configured to control the operation unit to sequentially read the first standard magnetic field strength value and the first received magnetic field strength value, and the second standard magnetic field strength value and the second received magnetic field strength value And calculating an error compensation algorithm required to compensate for an error between the received magnetic field strength value received by the low frequency receiving unit and the standard magnetic field strength value emitted by the low frequency transmitting unit;

校正模塊,用於控制所述傳輸單元向所述感應鑰匙發送所述補償演算法,以允許所述感應鑰匙在接收到下一低頻信號時運用所述補償演算法對其接收到的接收磁場強度值進行補償運算;a correction module, configured to control the transmission unit to send the compensation algorithm to the induction key to allow the induction key to receive the received magnetic field strength by using the compensation algorithm when receiving the next low frequency signal The value is compensated;

其中,所述低頻發射控制模塊還用於在判斷所述誤差未落入一預設之誤差範圍時,控制所述低頻發射單元繼續發送另一低頻信號,以允許感應鑰匙校正系統再次對所述智慧鑰匙進行校正,直至所述誤差落入所述預設之誤差範圍。The low frequency transmission control module is further configured to control the low frequency transmitting unit to continue transmitting another low frequency signal when determining that the error does not fall within a predetermined error range, to allow the inductive key correction system to The smart key is corrected until the error falls within the preset error range.

一種感應鑰匙校正方法,其應用於感應鑰匙、信號源及運算裝置上;所述感應鑰匙包括第一存儲單元、低頻接收單元高頻發射單元和處理單元;所述信號源包括第二存儲單元及低頻發射單元;所述運算裝置包括第三存儲單元、傳輸單元及運算單元,所述第三存儲單元預設存儲第一標準磁場強度、第二標準磁場強度及第三標準磁場強度;所述感應鑰匙校正方法包括步驟:An inductive key correction method is applied to an inductive key, a signal source, and an arithmetic device; the inductive key includes a first storage unit, a low frequency receiving unit high frequency transmitting unit, and a processing unit; the signal source includes a second storage unit and a low frequency transmitting unit; the computing device includes a third storage unit, a transmitting unit, and an arithmetic unit, wherein the third storage unit presets a first standard magnetic field strength, a second standard magnetic field strength, and a third standard magnetic field strength; The key correction method includes the steps:

控制所述低頻發射單元發送第一低頻信號,所述第一低頻信號包含所述第一標準磁場強度值;所述感應鑰匙接收所述第一低頻信號,並識別接收到之所述第一低頻信號之磁場強度為第一接收磁場強度值;Controlling the low frequency transmitting unit to transmit a first low frequency signal, the first low frequency signal including the first standard magnetic field strength value; the sensing key receiving the first low frequency signal and identifying the first low frequency received The magnetic field strength of the signal is the first received magnetic field strength value;

控制所述高頻發射單元發送第一高頻信號,所述第一高頻信號包含所述第一接收磁場強度值;Controlling the high frequency transmitting unit to transmit a first high frequency signal, the first high frequency signal including the first received magnetic field strength value;

控制所述通訊單元接收所述第一高頻信號;Controlling the communication unit to receive the first high frequency signal;

控制所述運算單元讀取所述第一標準磁場強度值及所述第一接收磁場強度值,並計算所述第一標準磁場強度值及所述第一接收磁場強度值間之第一差值;Controlling the operation unit to read the first standard magnetic field strength value and the first received magnetic field strength value, and calculating a first difference between the first standard magnetic field strength value and the first received magnetic field strength value ;

判斷若所述第一差值若未落入一預設之誤差範圍,則控制所述低頻發射單元發送第二低頻信號,所述第二低頻信號包含所述第二標準磁場強度值;所述第二標準磁場強度值與所述第一標準磁場強度值不相同;所述感應鑰匙接收所述第二低頻信號並識別接收到之所述第二低頻信號之磁場強度為第二接收磁場強度值;Determining, if the first difference does not fall within a predetermined error range, controlling the low frequency transmitting unit to transmit a second low frequency signal, the second low frequency signal including the second standard magnetic field strength value; The second standard magnetic field strength value is different from the first standard magnetic field strength value; the induction key receives the second low frequency signal and identifies the received magnetic field strength of the second low frequency signal as a second received magnetic field strength value ;

控制所述高頻發射單元發送第二高頻信號,所述第二高頻信號包含所述第二接收磁場強度值;Controlling the high frequency transmitting unit to transmit a second high frequency signal, the second high frequency signal including the second received magnetic field strength value;

控制所述通訊單元接收所述第二高頻信號;Controlling the communication unit to receive the second high frequency signal;

控制所述運算單元讀取所述第二標準磁場強度值及所述第二接收磁場強度值,並計算出補償所述低頻接收單元所接收之接收磁場強度值及所述低頻發射單元所發射之標準磁場強度值間之誤差所需要之誤差補償演算法;Controlling, by the operation unit, the second standard magnetic field strength value and the second received magnetic field strength value, and calculating a compensation received magnetic field strength value received by the low frequency receiving unit and the low frequency transmitting unit The error compensation algorithm required for the error between the standard magnetic field strength values;

控制所述傳輸單元向所述感應鑰匙發送所述補償演算法;Controlling the transmission unit to send the compensation algorithm to the inductive key;

控制所述低頻發射單元發送第三低頻信號,所述第三低頻信號包含所述第三標準磁場強度值;所述感應鑰匙接收所述第三低頻信號並識別接收到之所述第三低頻信號之磁場強度為第三接收磁場強度值;Controlling the low frequency transmitting unit to transmit a third low frequency signal, the third low frequency signal including the third standard magnetic field strength value; the sensing key receiving the third low frequency signal and identifying the received third low frequency signal The magnetic field strength is a third received magnetic field strength value;

控制所述處理單元運用所述映射函數關係將所述第三接收磁場強度值重新計算後,得到一近似標準磁場強度值;Controlling, by the processing unit, recalculating the third received magnetic field strength value by using the mapping function relationship to obtain an approximate standard magnetic field strength value;

控制所述高頻發射單元發射第三高頻信號,所述第三高頻信號包含所述似標標準磁場強度值;Controlling the high frequency transmitting unit to emit a third high frequency signal, the third high frequency signal including the scaled standard magnetic field strength value;

控制所述運算單元讀取所述第三標準磁場強度值及所述近似標準磁場強度值,並計算所述第三標準磁場強度值及所述近似標準磁場強度值間之第二差值;Controlling the operation unit to read the third standard magnetic field strength value and the approximate standard magnetic field strength value, and calculating a second difference between the third standard magnetic field strength value and the approximate standard magnetic field strength value;

判斷若所述第二差值若未落入所述預設之誤差允許範圍,則繼續上述校正步驟,直至所述第一差值或所述第二差值落入所述預設之誤差允許範圍。Determining, if the second difference does not fall within the preset error tolerance range, continuing the correcting step until the first difference or the second difference falls within the preset error tolerance range.

本發明之感應鑰匙校正系統及校正方法,利用信號源依次發射二次低頻信號並同時打出相應強度之磁場,感應鑰匙將二次接收到之磁場資訊發送至運算裝置以與磁場強度標準值做比較運算得出用於校正之映射函數關係,當信號源再次打出磁場時,該校正系統允許感應鑰匙根據該映射函數關係得出校正後之磁場強度,從而提高感應鑰匙對信號感應之準確性及穩定性。The inductive key correction system and the calibration method of the invention use the signal source to sequentially transmit the second low frequency signal and simultaneously generate the magnetic field of the corresponding intensity, and the induction key sends the second received magnetic field information to the computing device to compare with the standard value of the magnetic field strength. The calculation results in a mapping function relationship for correction. When the signal source again emits a magnetic field, the correction system allows the sensing key to obtain the corrected magnetic field strength according to the mapping function relationship, thereby improving the accuracy and stability of the sensing key to the signal sensing. Sex.

圖1為本發明一實施方式中感應鑰匙校正系統之功能模塊圖。1 is a functional block diagram of an inductive key correction system according to an embodiment of the present invention.

圖2為本發明一實施方式中車輛感應鑰匙校正系統之運行環境之功能模塊圖。2 is a functional block diagram of an operating environment of a vehicle-sensing key correction system according to an embodiment of the present invention.

圖3及圖4為本發明一實施方式中感應鑰匙校正方法之流程圖。3 and 4 are flowcharts of a method for correcting an inductive key according to an embodiment of the present invention.

請一併參考圖1和圖2,圖1為一種感應鑰匙校正系統S1之功能模塊圖,感應鑰匙校正系統S1運行於圖2所示之信號源10、運算裝置20以及感應鑰匙300中。感應鑰匙300具有儲存及運算功能,感應鑰匙校正系統S1用於校正感應鑰匙300所接收之外部信號,以提高感應鑰匙300對磁場感應之穩定性及準確性。Referring to FIG. 1 and FIG. 2 together, FIG. 1 is a functional block diagram of an inductive key correction system S1. The inductive key correction system S1 operates in the signal source 10, the computing device 20, and the inductive key 300 shown in FIG. The sensor key 300 has a storage and calculation function. The sensor key correction system S1 is used to correct the external signal received by the sensor key 300 to improve the stability and accuracy of the sensor key 300 for magnetic field sensing.

具體而言,感應鑰匙300能夠接收信號源10所發射之外部信號並識別所述外部信號之強度,所述外部信號在發送與接收之過程中,所述信號源10所發射之信號強度及感應鑰匙300所接收到之信號強度之間可能存在一定誤差值,所述感應鑰匙校正系統S1控制運算裝置20檢測並計算所述誤差值,並對感應鑰匙300所接收到之信號強度進行補償,使所述感應鑰匙300能夠準確地感應所述信號源10所發射之信號之強度。Specifically, the inductive key 300 is capable of receiving an external signal transmitted by the signal source 10 and identifying the strength of the external signal, the signal strength and inductance of the signal source 10 being transmitted during transmission and reception. There may be a certain error value between the signal strengths received by the key 300. The inductive key correction system S1 controls the arithmetic device 20 to detect and calculate the error value, and compensates for the signal strength received by the inductive key 300. The inductive key 300 is capable of accurately sensing the strength of a signal transmitted by the signal source 10.

感應鑰匙校正系統S1包括低頻發射控制模塊102、高頻發射控制模塊104、分析運算模塊106以及校正模塊108。The inductive key correction system S1 includes a low frequency transmission control module 102, a high frequency emission control module 104, an analysis operation module 106, and a correction module 108.

低頻發射控制模塊102用於控制信號源10向感應鑰匙300發射一低頻信號,所述低頻信號包含磁場強度值資訊。高頻發射控制模塊104用於控制感應鑰匙300向運算裝置20發射一高頻信號,所述高頻信號包含所述感應鑰匙300所接收之所述低頻信號之磁場強度值資訊。分析運算模塊106用於計算分析信號源10所發射之低頻信號磁場強度及感應鑰匙300所接收到之低頻信號磁場強度間之誤差值。所述校正模塊108用於向感應鑰匙300發送消除所述誤差值所需要之磁場強度誤差補償演算法或磁場強度誤差補償值。The low frequency emission control module 102 is configured to control the signal source 10 to transmit a low frequency signal to the inductive key 300, the low frequency signal including magnetic field strength value information. The high frequency emission control module 104 is configured to control the inductive key 300 to transmit a high frequency signal to the computing device 20, the high frequency signal including magnetic field strength value information of the low frequency signal received by the inductive key 300. The analysis operation module 106 is configured to calculate an error value between the magnetic field strength of the low frequency signal emitted by the analysis signal source 10 and the magnetic field strength of the low frequency signal received by the induction key 300. The correction module 108 is configured to send the magnetic field strength error compensation algorithm or the magnetic field strength error compensation value required to cancel the error value to the induction key 300.

在本實施方式中,感應鑰匙300包括第一存儲單元302、低頻接收單元304、高頻發射單元306和處理單元308。In the present embodiment, the inductive key 300 includes a first storage unit 302, a low frequency receiving unit 304, a high frequency transmitting unit 306, and a processing unit 308.

處理單元308用於為感應鑰匙300提供運算功能。第一存儲單元302用於為感應鑰匙300提供存儲功能,並用於存儲高頻發射控制模塊104。低頻接收單元304用於感測感應鑰匙300周圍之低頻信號並啟動感應鑰匙300接收所述低頻信號,所述低頻信號中包含磁場強度值。高頻發射單元306用於向運算裝置20發射一高頻信號,所述高頻信號中包含低頻接收單元304所接收之低頻信號之磁場強度值。The processing unit 308 is configured to provide an arithmetic function for the inductive key 300. The first storage unit 302 is configured to provide a storage function for the inductive key 300 and to store the high frequency emission control module 104. The low frequency receiving unit 304 is configured to sense a low frequency signal around the inductive key 300 and activate the inductive key 300 to receive the low frequency signal, the low frequency signal including a magnetic field strength value. The high frequency transmitting unit 306 is configured to transmit a high frequency signal to the computing device 20, wherein the high frequency signal includes a magnetic field strength value of the low frequency signal received by the low frequency receiving unit 304.

信號源10包括第二存儲單元11、低頻發射單元13及與低頻發射單元13相連接之亥姆霍茲線圈15。The signal source 10 includes a second storage unit 11, a low frequency transmitting unit 13, and a Helmholtz coil 15 connected to the low frequency transmitting unit 13.

第二存儲單元11用於為信號源10提供存儲功能,並用於存儲低頻發射控制模塊102。低頻發射單元13用於間隔地產生低頻信號並向所述之亥姆霍茲線圈15輸出相應電壓。亥姆霍茲線圈15與低頻發射單元13連接後打出均勻之標準磁場,使得低頻發射單元13向周邊發出一低頻信號以允許感應鑰匙300之低頻接收單元304接收。所述低頻信號包含所述標準磁場之標準磁場強度。在本實施方式中,亥姆霍茲線圈15之軸中心附近用於放置感應鑰匙300,所述低頻信號及磁場信號能夠被感應鑰匙300所感測以啟動感應鑰匙300,以使感應鑰匙300之低頻接收單元304接收所述低頻信號,從而允許高頻發射單元306發射所述高頻信號,所述高頻信號中包含低頻接收單元304所接收之低頻信號之磁場強度值。The second storage unit 11 is for providing a storage function for the signal source 10 and for storing the low frequency transmission control module 102. The low frequency transmitting unit 13 is for intermittently generating a low frequency signal and outputting a corresponding voltage to the Helmholtz coil 15. The Helmholtz coil 15 is connected to the low frequency transmitting unit 13 to produce a uniform standard magnetic field, so that the low frequency transmitting unit 13 emits a low frequency signal to the periphery to allow the low frequency receiving unit 304 of the inductive key 300 to receive. The low frequency signal comprises a standard magnetic field strength of the standard magnetic field. In the present embodiment, the inductive key 300 is placed near the center of the axis of the Helmholtz coil 15, and the low frequency signal and the magnetic field signal can be sensed by the inductive key 300 to activate the inductive key 300 to make the inductive key 300 low frequency. The receiving unit 304 receives the low frequency signal, thereby allowing the high frequency transmitting unit 306 to transmit the high frequency signal, wherein the high frequency signal includes a magnetic field strength value of the low frequency signal received by the low frequency receiving unit 304.

運算裝置20包括第三存儲單元201、傳輸單元202及運算單元204。運算裝置20可以為電腦、手機等電子裝置,也可以為集成在感應鑰匙300內之運算程式。The arithmetic device 20 includes a third storage unit 201, a transmission unit 202, and an operation unit 204. The computing device 20 can be an electronic device such as a computer or a mobile phone, or can be an arithmetic program integrated in the inductive key 300.

第三存儲單元201用於為運算裝置20提供存儲功能,並用於存儲分析運算模塊106及校正模塊108。本實施方式中,在感應鑰匙300進行校正前,第三存儲單元201預先存儲信號源10產生之磁場之磁場強度標準值。傳輸單元202與感應鑰匙300之高頻發射單元306建立無線通訊,其用於接收感應鑰匙300發送之高頻信號,同時用於將運算裝置20所計算之所述誤差補償演算法或誤差補償值發送至感應鑰匙300中。在本實施例中,傳輸單元202為UHF高頻信號發射/接收器。運算單元204用於從感應鑰匙300之高頻發射單元306發射之高頻信號中獲取低頻接收單元304所接收之低頻信號之磁場強度值,並將所述磁場強度值第三存儲單元201中預存之磁場強度標準值進行比較運算以得出消除所述磁場強度值及磁場強度標準值間之誤差所需之誤差補償演算法。The third storage unit 201 is configured to provide a storage function for the computing device 20 and to store the analysis computing module 106 and the calibration module 108. In the present embodiment, before the correction key 300 performs correction, the third storage unit 201 stores in advance the magnetic field strength standard value of the magnetic field generated by the signal source 10. The transmission unit 202 establishes wireless communication with the high frequency transmitting unit 306 of the inductive key 300 for receiving the high frequency signal transmitted by the inductive key 300, and is used for calculating the error compensation algorithm or error compensation value calculated by the computing device 20. Send to the sensor key 300. In the present embodiment, the transmission unit 202 is a UHF high frequency signal transmitter/receiver. The operation unit 204 is configured to obtain a magnetic field strength value of the low frequency signal received by the low frequency receiving unit 304 from the high frequency signal transmitted by the high frequency transmitting unit 306 of the inductive key 300, and prestore the magnetic field strength value in the third storage unit 201. The magnetic field strength standard value is compared to obtain an error compensation algorithm required to eliminate the error between the magnetic field strength value and the magnetic field strength standard value.

請再次參閱圖1,感應鑰匙校正系統S1之各模塊為存儲在第一存儲單元302或/及第二存儲單元11或/及第三存儲單元201中、並可被第一存儲單元302或/及第二存儲單元11或/及第三存儲單元201執行之可程式化之模塊。在本實施方式中,低頻發射控制模塊102存儲在第二存儲單元11中並可被低頻發射單元13執行;高頻發射控制模塊104及校正模塊108存儲在第一存儲單元302中,並可被高頻發射單元306執行;分析運算模塊106存儲在第三存儲單元201中,並可被運算單元204執行。Referring again to FIG. 1, each module of the inductive key correction system S1 is stored in the first storage unit 302 or/and the second storage unit 11 or/and the third storage unit 201, and may be used by the first storage unit 302 or / And a programmable module executed by the second storage unit 11 or/and the third storage unit 201. In the present embodiment, the low frequency emission control module 102 is stored in the second storage unit 11 and can be executed by the low frequency transmitting unit 13; the high frequency emission control module 104 and the correction module 108 are stored in the first storage unit 302 and can be The high frequency transmitting unit 306 executes; the analysis operation module 106 is stored in the third storage unit 201 and can be executed by the arithmetic unit 204.

上述各模塊之程式執行具體如下:The program execution of each of the above modules is as follows:

低頻發射控制模塊102控制信號源10之低頻發射單元13發射第一低頻信號,同時與低頻發射單元13連接之亥姆霍茲線圈15打出磁場,使所述第一低頻信號包含第一發射磁場強度值,所述第一發射磁場強度值為第一標準磁場強度值。The low frequency emission control module 102 controls the low frequency transmitting unit 13 of the signal source 10 to emit the first low frequency signal, while the Helmholtz coil 15 connected to the low frequency transmitting unit 13 emits a magnetic field, so that the first low frequency signal includes the first transmitting magnetic field strength. a value, the first transmitted magnetic field strength value being a first standard magnetic field strength value.

感應鑰匙300之低頻接收單元304接收所述第一低頻信號,並識別其接收之第一低頻信號之磁場強度值。記低頻接收單元304接收到之所述第一低頻信號之磁場強度值為第一接收磁場強度值。The low frequency receiving unit 304 of the inductive key 300 receives the first low frequency signal and identifies the magnetic field strength value of the first low frequency signal it receives. The magnetic field strength value of the first low frequency signal received by the low frequency receiving unit 304 is a first received magnetic field strength value.

高頻發射控制模塊104控制感應鑰匙300之高頻發射單元306向運算裝置20發送一第一高頻信號,所述第一高頻信號包含所述第一接收磁場強度值。The high frequency emission control module 104 controls the high frequency transmitting unit 306 of the inductive key 300 to transmit a first high frequency signal to the computing device 20, the first high frequency signal including the first received magnetic field strength value.

運算裝置20之第三存儲單元201中預存有所述第一標準磁場強度值。運算裝置20之傳輸單元202接收所述第一高頻信號,並從所述第一高頻信號中獲取所述第一接收磁場強度值。分析運算模塊106控制運算單元204讀取所述第一標準磁場強度值及所述第一接收磁場強度值,並計算所述第一接收磁場強度值與所述第一標準磁場強度值間之差值。若判斷所述差值為零或落入允許之誤差範圍內,則感應鑰匙300之感應靈敏度符合要求,不需校正,則流程結束。若所述差值未落入誤差允許之範圍內,則需對感應鑰匙300繼續校正。The first standard magnetic field strength value is prestored in the third storage unit 201 of the computing device 20. The transmission unit 202 of the computing device 20 receives the first high frequency signal and obtains the first received magnetic field strength value from the first high frequency signal. The analysis operation module 106 controls the operation unit 204 to read the first standard magnetic field strength value and the first received magnetic field strength value, and calculate a difference between the first received magnetic field strength value and the first standard magnetic field strength value value. If it is judged that the difference is zero or falls within the allowable error range, the sensing sensitivity of the sensing key 300 meets the requirements, and no correction is required, and the flow ends. If the difference does not fall within the tolerance of the error, then the sensor key 300 needs to continue to be corrected.

低頻發射控制模塊102再次控制信號源10之低頻發射單元13發射一第二低頻信號,同時與低頻發射單元13連接之亥姆霍茲線圈15打出磁場,使所述第二低頻信號包含第二發射磁場強度值,所述第二發射磁場強度值為第二標準磁場強度值,所述第二標準磁場強度值不同於所述第一標準磁場強度值。The low frequency emission control module 102 again controls the low frequency transmitting unit 13 of the signal source 10 to emit a second low frequency signal, while the Helmholtz coil 15 connected to the low frequency transmitting unit 13 emits a magnetic field, so that the second low frequency signal includes the second emission. a magnetic field strength value, the second emitted magnetic field strength value being a second standard magnetic field strength value, the second standard magnetic field strength value being different from the first standard magnetic field strength value.

感應鑰匙300之低頻接收單元304接收所述第二低頻信號,並識別其接收之第二低頻信號之磁場強度值。記低頻接收單元304接收到之所述第二低頻信號之磁場強度值為第二接收磁場強度值。The low frequency receiving unit 304 of the inductive key 300 receives the second low frequency signal and identifies the magnetic field strength value of the second low frequency signal it receives. The magnetic field strength value of the second low frequency signal received by the low frequency receiving unit 304 is a second received magnetic field strength value.

高頻發射控制模塊104控制感應鑰匙300之高頻發射單元306向運算裝置20發送一第二高頻信號,所述第二高頻信號包含所述第二接收磁場強度值。The high frequency emission control module 104 controls the high frequency transmitting unit 306 of the inductive key 300 to transmit a second high frequency signal to the computing device 20, the second high frequency signal including the second received magnetic field strength value.

運算裝置20之第三存儲單元201中預存有所述第二標準磁場強度值。運算裝置20之傳輸單元202接收所述第二高頻信號,並從所述第二高頻信號中獲取所述第二接收磁場強度值。分析運算模塊106控制運算單元204讀取所述第二標準磁場強度值及所述第二接收磁場強度值,並計算所述第二接收磁場強度值與所述第二標準磁場強度值間之差值。The second standard magnetic field strength value is prestored in the third storage unit 201 of the computing device 20. The transmission unit 202 of the arithmetic device 20 receives the second high frequency signal and acquires the second received magnetic field strength value from the second high frequency signal. The analysis operation module 106 controls the operation unit 204 to read the second standard magnetic field strength value and the second received magnetic field strength value, and calculate a difference between the second received magnetic field strength value and the second standard magnetic field strength value value.

分析運算模塊106控制運算單元204建立一第一函數關係及一第二函數關係,所述第一函數關係為所述第一標準磁場強度值及所述第二標準磁場強度值間之線性函數關係;所述第二函數關係為所述第一接收磁場強度值及所述第二接收磁場強度值間之線性函數關係。The analysis operation module 106 controls the operation unit 204 to establish a first functional relationship and a second functional relationship, wherein the first functional relationship is a linear function relationship between the first standard magnetic field strength value and the second standard magnetic field strength value. The second functional relationship is a linear function relationship between the first received magnetic field strength value and the second received magnetic field strength value.

運算單元204繼續計算,建立所述第一函數關係及所述一第二函數關係間之映射函數關係。所述映射函數關係應用於所述第二函數關係中時,能夠使得所述第一接收磁場強度值及所述第二接收磁場強度值經過換算後,分別無限地接近所述第一標準磁場強度值及所述第二標準磁場強度值。換言之,所述第一接收磁場強度值在套用所述映射函數關係後,能夠得到一第一近似標準磁場強度值,所述第一近似標準磁場強度值相較於所述第一接收磁場強度值更為接近所述第一標準磁場強度值;所述第二接收磁場強度值在套用所述映射函數關係後,能夠得到一第二近似標準磁場強度值,所述第二近似標準磁場強度值相較於所述第二接收磁場強度值更為接近所述第二標準磁場強度值。可以理解,所述第一近似標準磁場強度值及所述第二近似標準磁場強度值可以分別無限地接近所述第一標準磁場強度值及所述第二標準磁場強度值。在本實施方式中,所述映射函數關係由所述第一函數關係相對於所述第二函數關係之偏移量及斜率差確定。The operation unit 204 continues the calculation to establish a mapping function relationship between the first functional relationship and the second functional relationship. When the mapping function relationship is applied to the second functional relationship, the first received magnetic field strength value and the second received magnetic field strength value may be converted to infinitely approximate the first standard magnetic field strength respectively after being converted. And a value of the second standard magnetic field strength. In other words, the first received magnetic field strength value can obtain a first approximate standard magnetic field strength value after applying the mapping function relationship, and the first approximate standard magnetic field strength value is compared with the first received magnetic field strength value. More similar to the first standard magnetic field strength value; the second received magnetic field strength value, after applying the mapping function relationship, can obtain a second approximate standard magnetic field strength value, and the second approximate standard magnetic field strength value The second standard magnetic field strength value is closer to the second received magnetic field strength value. It can be understood that the first approximate standard magnetic field strength value and the second approximate standard magnetic field strength value may respectively infinitely approach the first standard magnetic field strength value and the second standard magnetic field strength value. In this embodiment, the mapping function relationship is determined by an offset and a slope difference of the first functional relationship with respect to the second functional relationship.

校正模塊108控制傳輸單元202將所述映射函數關係傳輸並存儲至感應鑰匙300之第一存儲單元302中。The correction module 108 controls the transmission unit 202 to transmit and store the mapping function relationship into the first storage unit 302 of the inductive key 300.

低頻發射控制模塊102再次控制信號源10之低頻發射單元13發射一第三低頻信號,同時與低頻發射單元13連接之亥姆霍茲線圈15打出磁場,使所述第三低頻信號包含第三發射磁場強度值,所述第三發射磁場強度值為第三標準磁場強度值。The low frequency emission control module 102 again controls the low frequency transmitting unit 13 of the signal source 10 to emit a third low frequency signal, while the Helmholtz coil 15 connected to the low frequency transmitting unit 13 emits a magnetic field, so that the third low frequency signal includes the third emission. A magnetic field strength value, the third emission magnetic field strength value being a third standard magnetic field strength value.

感應鑰匙300之低頻接收單元304接收所述第三低頻信號,並識別其接收之第三低頻信號之磁場強度值。記低頻接收單元304接收到之所述第三低頻信號之磁場強度值為第三接收磁場強度值。The low frequency receiving unit 304 of the inductive key 300 receives the third low frequency signal and identifies the magnetic field strength value of the third low frequency signal it receives. The magnetic field strength value of the third low frequency signal received by the low frequency receiving unit 304 is a third received magnetic field strength value.

感應鑰匙300之處理單元308將所述第三接收磁場強度值應用所述映射函數關係重新計算後,得到一第三近似標準磁場強度值。高頻發射單元306向運算裝置20發送一第三高頻信號,所述第三高頻信號包含所述第三近似標準磁場強度值。The processing unit 308 of the inductive key 300 recalculates the third received magnetic field strength value by applying the mapping function relationship to obtain a third approximate standard magnetic field strength value. The high frequency transmitting unit 306 transmits a third high frequency signal to the computing device 20, the third high frequency signal including the third approximate standard magnetic field strength value.

運算裝置20之第三存儲單元201中預存有所述第三標準磁場強度值。運算裝置20之傳輸單元202接收所述第三高頻信號,並從所述第三高頻信號中獲取所述第三近似標準磁場強度值。分析運算模塊106控制運算單元204讀取所述第三標準磁場強度值及所述第三近似標準磁場強度值,並計算所述第三近似標準磁場強度值與所述第三標準磁場強度值間之差值。若所述差值在誤差允許之範圍之內,則上述之校正流程結束,若所述差值未落入誤差允許之範圍,則重複上述感應鑰匙校正流程。The third standard magnetic field strength value is prestored in the third storage unit 201 of the computing device 20. The transmission unit 202 of the computing device 20 receives the third high frequency signal and obtains the third approximate standard magnetic field strength value from the third high frequency signal. The analysis operation module 106 controls the operation unit 204 to read the third standard magnetic field strength value and the third approximate standard magnetic field strength value, and calculate the third approximate standard magnetic field strength value and the third standard magnetic field strength value The difference. If the difference is within the error tolerance range, the above-mentioned calibration process ends, and if the difference does not fall within the error tolerance range, the above-described inductive key correction process is repeated.

本發明實施方式之感應鑰匙校正系統S1可以應用於感應鑰匙300之生產中,通過所述映射函數關係對感應鑰匙300接收到之信號進行磁場強度補償,提高感應鑰匙300之靈敏度。可以理解,感應鑰匙校正系統S1也可以應用在感應鑰匙300之品質檢測或檢修中。The inductive key correction system S1 of the embodiment of the present invention can be applied to the production of the inductive key 300, and the magnetic field strength compensation is performed on the signal received by the inductive key 300 by the mapping function relationship, thereby improving the sensitivity of the inductive key 300. It can be understood that the inductive key correction system S1 can also be applied to the quality detection or maintenance of the inductive key 300.

甚至,感應鑰匙校正系統S1還可以應用在一車輛控制系統中。具體而言,信號源10可以設置在一車輛上,運算裝置20可以集成在感應鑰匙300中,可以設置在所述車輛上,也可以集成在信號源10內。當用戶發現感應鑰匙300之靈敏度下降時,可以啟動感應鑰匙校正系統S1,採用上述校正流程獲取一新之映射函數關係,對感應鑰匙300重新校正,以提高其感應靈敏度。感應鑰匙300經過校正後,首先對其所接收之低頻信號之磁場強度進行補償計算,再根據補償後之磁場強度執行下一步作業。例如,若補償後之磁場強度落入一預設範圍,感應鑰匙300可以控制所述車輛車門之開啟或關閉。因此,應用感應鑰匙校正系統S1之感應鑰匙300之靈敏度較高,能夠預防因接收之磁場強度誤差而導致誤操作。Even the inductive key correction system S1 can be applied to a vehicle control system. In particular, the signal source 10 can be disposed on a vehicle, and the computing device 20 can be integrated into the inductive key 300, can be disposed on the vehicle, or can be integrated into the signal source 10. When the user finds that the sensitivity of the inductive key 300 is degraded, the inductive key correction system S1 can be activated, and a new mapping function relationship is obtained by using the above correction process, and the inductive key 300 is recalibrated to improve the sensing sensitivity. After the sensor key 300 is corrected, the magnetic field strength of the received low frequency signal is first compensated and calculated, and then the next step is performed according to the compensated magnetic field strength. For example, if the compensated magnetic field strength falls within a predetermined range, the inductive key 300 can control the opening or closing of the vehicle door. Therefore, the sensitivity of the inductive key 300 using the inductive key correction system S1 is high, and it is possible to prevent erroneous operation due to the magnetic field strength error received.

請參照圖3及圖4,圖3及圖4示出了本發明一實施方式中感應鑰匙校正方法之流程圖。所述感應鑰匙之校正方法,包括如下步驟:Referring to FIG. 3 and FIG. 4, FIG. 3 and FIG. 4 are flowcharts showing an inductive key correction method according to an embodiment of the present invention. The method for correcting the sensing key includes the following steps:

步驟S101:信號源10發射第一低頻信號,所述第一低頻信號包含第一標準磁場強度值;感應鑰匙300接收所述第一低頻信號。具體地,低頻發射控制模塊102控制信號源10之低頻發射單元13發射所述第一低頻信號,所述第一低頻信號包含第一標準磁場強度值;感應鑰匙300之低頻接收單元304接收所述第一低頻信號,並識別其接收之第一低頻信號之磁場強度值。記低頻接收單元304接收到之所述第一低頻信號之磁場強度值為第一接收磁場強度值。Step S101: The signal source 10 transmits a first low frequency signal, the first low frequency signal includes a first standard magnetic field strength value, and the inductive key 300 receives the first low frequency signal. Specifically, the low frequency transmission control module 102 controls the low frequency transmitting unit 13 of the signal source 10 to transmit the first low frequency signal, the first low frequency signal includes a first standard magnetic field strength value; and the low frequency receiving unit 304 of the inductive key 300 receives the The first low frequency signal and identifying the magnetic field strength value of the first low frequency signal it receives. The magnetic field strength value of the first low frequency signal received by the low frequency receiving unit 304 is a first received magnetic field strength value.

步驟S103:感應鑰匙300向運算裝置20發射第一高頻信號,所述第一高頻信號包含所述第一接收磁場強度值;運算裝置20接收所述第一高頻信號。具體地,高頻發射控制模塊104控制感應鑰匙300之高頻發射單元306向運算裝置20發送所述第一高頻信號,所述第一高頻信號包含所述第一接收磁場強度值。運算裝置20之傳輸單元202接收所述第一高頻信號,並從所述第一高頻信號中獲取所述第一接收磁場強度值。Step S103: The induction key 300 transmits a first high frequency signal to the computing device 20, the first high frequency signal including the first received magnetic field strength value, and the computing device 20 receiving the first high frequency signal. Specifically, the high frequency emission control module 104 controls the high frequency transmitting unit 306 of the inductive key 300 to transmit the first high frequency signal to the computing device 20, the first high frequency signal including the first received magnetic field strength value. The transmission unit 202 of the computing device 20 receives the first high frequency signal and obtains the first received magnetic field strength value from the first high frequency signal.

步驟S105:運算裝置20之第三存儲單元201中預存有所述第一標準磁場強度值。運算裝置20計算所述第一接收磁場強度值與所述第一標準磁場強度值間之差值。具體地,分析運算模塊106控制運算單元204讀取所述第一標準磁場強度值及所述第一接收磁場強度值,並計算所述第一接收磁場強度值與所述第一標準磁場強度值間之差值。若判斷所述差值為零或落入允許之誤差範圍內,則感應鑰匙300之感應靈敏度符合要求,不需校正,則流程結束。若所述差值未落入誤差允許之範圍內,則需對感應鑰匙300繼續校正,進入步驟S107。Step S105: The first standard magnetic field strength value is prestored in the third storage unit 201 of the computing device 20. The computing device 20 calculates a difference between the first received magnetic field strength value and the first standard magnetic field strength value. Specifically, the analysis operation module 106 controls the operation unit 204 to read the first standard magnetic field strength value and the first received magnetic field strength value, and calculate the first received magnetic field strength value and the first standard magnetic field strength value. The difference between the two. If it is judged that the difference is zero or falls within the allowable error range, the sensing sensitivity of the sensing key 300 meets the requirements, and no correction is required, and the flow ends. If the difference does not fall within the allowable range of the error, the sensor key 300 is continuously corrected, and the process proceeds to step S107.

步驟S107:信號源10發射第二低頻信號,所述第二低頻信號包含第二標準磁場強度值;感應鑰匙300接收所述第二低頻信號。具體地,低頻發射控制模塊102控制信號源10之低頻發射單元13發射所述第二低頻信號,所述第二低頻信號包含一與所述第一標準磁場強度值不相同之第二標準磁場強度值;感應鑰匙300之低頻接收單元304接收所述第二低頻信號,並識別其接收之第二低頻信號之磁場強度值。記低頻接收單元304接收到之所述第二低頻信號之磁場強度值為第二接收磁場強度值。Step S107: The signal source 10 transmits a second low frequency signal, the second low frequency signal includes a second standard magnetic field strength value; and the induction key 300 receives the second low frequency signal. Specifically, the low frequency transmission control module 102 controls the low frequency transmitting unit 13 of the signal source 10 to transmit the second low frequency signal, and the second low frequency signal includes a second standard magnetic field strength different from the first standard magnetic field strength value. The low frequency receiving unit 304 of the inductive key 300 receives the second low frequency signal and identifies the magnetic field strength value of the second low frequency signal it receives. The magnetic field strength value of the second low frequency signal received by the low frequency receiving unit 304 is a second received magnetic field strength value.

步驟S109:感應鑰匙300向運算裝置20發射第二高頻信號,所述第二高頻信號包含所述第二接收磁場強度值;運算裝置20接收所述第二高頻信號。具體地,高頻發射控制模塊104控制感應鑰匙300之高頻發射單元306向運算裝置20發送所述第二高頻信號,所述第二高頻信號包含所述第二接收磁場強度值。運算裝置20之傳輸單元202接收所述第二高頻信號,並從所述第二高頻信號中獲取所述第二接收磁場強度值。Step S109: The induction key 300 transmits a second high frequency signal to the computing device 20, the second high frequency signal including the second received magnetic field strength value; and the computing device 20 receives the second high frequency signal. Specifically, the high frequency emission control module 104 controls the high frequency transmitting unit 306 of the inductive key 300 to transmit the second high frequency signal to the computing device 20, the second high frequency signal including the second received magnetic field strength value. The transmission unit 202 of the arithmetic device 20 receives the second high frequency signal and acquires the second received magnetic field strength value from the second high frequency signal.

步驟S111:運算裝置20之第三存儲單元201中預存有所述第二標準磁場強度值。運算裝置20計算所述第二接收磁場強度值與所述第二標準磁場強度值間之差值。具體地,分析運算模塊106控制運算單元204讀取所述第二標準磁場強度值及所述第二接收磁場強度值,並計算所述第二接收磁場強度值與所述第二標準磁場強度值間之差值。Step S111: The second standard magnetic field strength value is prestored in the third storage unit 201 of the computing device 20. The arithmetic device 20 calculates a difference between the second received magnetic field strength value and the second standard magnetic field strength value. Specifically, the analysis operation module 106 controls the operation unit 204 to read the second standard magnetic field strength value and the second received magnetic field strength value, and calculate the second received magnetic field strength value and the second standard magnetic field strength value. The difference between the two.

步驟S113:運算裝置20根據所述第一接收磁場強度值與所述第一標準磁場強度值間之差值及第二接收磁場強度值與所述第二標準磁場強度值間之差值,計算感應鑰匙300接收磁場信號之誤差程度及消除所述誤差所需之誤差補償演算法。Step S113: The computing device 20 calculates the difference between the first received magnetic field strength value and the first standard magnetic field strength value and the difference between the second received magnetic field strength value and the second standard magnetic field strength value. The sensor key 300 receives the error level of the magnetic field signal and the error compensation algorithm required to eliminate the error.

具體地,分析運算模塊106控制運算單元204建立所述第一標準磁場強度值及所述第二標準磁場強度值間之第一函數關係,及所述第一接收磁場強度值及所述第二接收磁場強度值間之第二函數關係,同時建立所述第一函數關係及所述一第二函數關係間之映射函數關係。所述映射函數關係即消除所述誤差所需之誤差補償演算法。在本實施方式中,所述映射函數關係由第一函數關係相對於所述第二函數關係之偏移量及斜率差確定。Specifically, the analysis operation module 106 controls the operation unit 204 to establish a first functional relationship between the first standard magnetic field strength value and the second standard magnetic field strength value, and the first received magnetic field strength value and the second Receiving a second functional relationship between the values of the magnetic field strengths, and establishing a mapping function relationship between the first functional relationship and the second functional relationship. The mapping function relationship is the error compensation algorithm required to eliminate the error. In the present embodiment, the mapping function relationship is determined by an offset and a slope difference of the first functional relationship with respect to the second functional relationship.

步驟S115:運算裝置20繼續將所述誤差補償演算法回傳至感應鑰匙300,感應鑰匙300接收並存儲所述誤差補償演算法。具體地,校正模塊108控制傳輸單元202將所述映射函數關係傳輸並存儲至感應鑰匙300之第一存儲單元302中。Step S115: The computing device 20 continues to transmit the error compensation algorithm back to the inductive key 300, and the inductive key 300 receives and stores the error compensation algorithm. Specifically, the correction module 108 controls the transmission unit 202 to transmit and store the mapping function relationship into the first storage unit 302 of the inductive key 300.

步驟S117:信號源10發送第三低頻信號,所述第三低頻信號包含第三標準磁場強度值;感應鑰匙300接收所述第三低頻信號。具體地,低頻發射控制模塊102再次控制信號源10之低頻發射單元13發射一第三低頻信號,同時與低頻發射單元13連接之亥姆霍茲線圈15打出磁場,使所述第三低頻信號包含第三發射磁場強度值,所述第三發射磁場強度值為第三標準磁場強度值。感應鑰匙300之低頻接收單元304接收所述第三低頻信號,並識別其接收之第三低頻信號之磁場強度值。記低頻接收單元304接收到之所述第三低頻信號之磁場強度值為第三接收磁場強度值。Step S117: The signal source 10 transmits a third low frequency signal, the third low frequency signal includes a third standard magnetic field strength value; and the inductive key 300 receives the third low frequency signal. Specifically, the low frequency emission control module 102 again controls the low frequency transmitting unit 13 of the signal source 10 to emit a third low frequency signal, while the Helmholtz coil 15 connected to the low frequency transmitting unit 13 emits a magnetic field, so that the third low frequency signal includes a third transmitted magnetic field strength value, the third transmitted magnetic field strength value being a third standard magnetic field strength value. The low frequency receiving unit 304 of the inductive key 300 receives the third low frequency signal and identifies the magnetic field strength value of the third low frequency signal it receives. The magnetic field strength value of the third low frequency signal received by the low frequency receiving unit 304 is a third received magnetic field strength value.

步驟S119:感應鑰匙300應用所述誤差補償演算法對所述第三接收磁場強度值進行補償計算後,得到第三近似標準磁場強度值;感應鑰匙300繼續向運算裝置20發送第三高頻信號,所述第三高頻信號包含所述第三近似標準磁場強度值。具體地,感應鑰匙300之處理單元308將所述第三接收磁場強度值應用所述映射函數關係重新計算後,得到一第三近似標準磁場強度值。高頻發射單元306向運算裝置20發送一第三高頻信號,所述第三高頻信號包含所述第三近似標準磁場強度值。Step S119: The sensing key 300 applies the error compensation algorithm to compensate the third received magnetic field strength value to obtain a third approximate standard magnetic field strength value; the induction key 300 continues to send the third high frequency signal to the computing device 20 The third high frequency signal includes the third approximate standard magnetic field strength value. Specifically, the processing unit 308 of the inductive key 300 recalculates the third received magnetic field strength value by applying the mapping function relationship to obtain a third approximate standard magnetic field strength value. The high frequency transmitting unit 306 transmits a third high frequency signal to the computing device 20, the third high frequency signal including the third approximate standard magnetic field strength value.

步驟S121:運算裝置20之第三存儲單元201中預存有所述第三標準磁場強度值。運算裝置20計算所述第三近似磁場強度值與所述第三標準磁場強度值間之差值。具體地,分析運算模塊106控制運算單元204讀取所述第一標準磁場強度值及所述第三近似磁場強度值,並計算所述第三近似磁場強度值與所述第三標準磁場強度值間之差值。若判斷所述差值為零或落入允許之誤差範圍內,則感應鑰匙300之感應靈敏度符合要求,本次校正流程結束。若所述差值未落入誤差允許之範圍內,則需對感應鑰匙300繼續校正,進入步驟S101-S121。Step S121: The third standard magnetic field strength value is pre-stored in the third storage unit 201 of the computing device 20. The arithmetic device 20 calculates a difference between the third approximate magnetic field strength value and the third standard magnetic field strength value. Specifically, the analysis operation module 106 controls the operation unit 204 to read the first standard magnetic field strength value and the third approximate magnetic field strength value, and calculate the third approximate magnetic field strength value and the third standard magnetic field strength value. The difference between the two. If it is determined that the difference is zero or falls within the allowable error range, the sensing sensitivity of the inductive key 300 meets the requirements, and the current calibration process ends. If the difference does not fall within the allowable range of the error, the sensor key 300 is continuously corrected, and steps S101-S121 are performed.

本發明之感應鑰匙校正系統及校正方法,利用信號源10依次發射二次低頻信號並同時打出相應強度之磁場,感應鑰匙300將二次接收到之磁場資訊發送至運算裝置20以與磁場強度標準值做比較運算得出用於校正之映射函數關係,當信號源10再次打出磁場時,該校正系統允許感應鑰匙300根據該映射函數關係得出校正後之磁場強度,從而提高感應鑰匙300對信號感應之準確性及穩定性。The inductive key correction system and the calibration method of the present invention use the signal source 10 to sequentially transmit the second low frequency signal and simultaneously generate the magnetic field of the corresponding intensity, and the induction key 300 transmits the second received magnetic field information to the computing device 20 to meet the magnetic field strength standard. The value is compared to obtain a mapping function relationship for correction. When the signal source 10 again emits a magnetic field, the correction system allows the sensing key 300 to obtain the corrected magnetic field strength according to the mapping function relationship, thereby improving the sensing key 300 pair signal. Sensing accuracy and stability.

可以理解,該校正系統100可同時校正複數具有存儲及運算功能之感應鑰匙300。It can be understood that the correction system 100 can simultaneously correct a plurality of sensing keys 300 having storage and computing functions.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

S1‧‧‧感應鑰匙校正系統S1‧‧‧Induction Key Correction System

102‧‧‧低頻發射控制模塊102‧‧‧Low Frequency Launch Control Module

104‧‧‧高頻發射控制模塊104‧‧‧High frequency emission control module

106‧‧‧分析運算模塊106‧‧‧Analytical computing module

108‧‧‧校正模塊108‧‧‧Correction module

300‧‧‧感應鑰匙300‧‧‧Induction key

302‧‧‧第一存儲單元302‧‧‧First storage unit

304‧‧‧低頻接收單元304‧‧‧Low frequency receiving unit

306‧‧‧高頻發射單元306‧‧‧High frequency launch unit

308‧‧‧處理單元308‧‧‧Processing unit

10‧‧‧信號源10‧‧‧Signal source

11‧‧‧第二存儲單元11‧‧‧Second storage unit

13‧‧‧低頻發射單元13‧‧‧Low frequency launch unit

15‧‧‧亥姆霍茲線圈15‧‧‧ Helmholtz coil

20‧‧‧運算裝置20‧‧‧ arithmetic device

201‧‧‧第三存儲單元201‧‧‧ third storage unit

202‧‧‧傳輸單元202‧‧‧Transport unit

204‧‧‧運算單元204‧‧‧ arithmetic unit

no

S1‧‧‧感應鑰匙校正系統 S1‧‧‧Induction Key Correction System

102‧‧‧低頻發射控制模塊 102‧‧‧Low Frequency Launch Control Module

104‧‧‧高頻發射控制模塊 104‧‧‧High frequency emission control module

106‧‧‧分析運算模塊 106‧‧‧Analytical computing module

108‧‧‧校正模塊 108‧‧‧Correction module

Claims (10)

一種感應鑰匙校正系統,其應用於感應鑰匙、信號源及運算裝置上;所述感應鑰匙包括第一存儲單元、低頻接收單元、高頻發射單元和處理單元;所述信號源包括第二存儲單元及低頻發射單元;所述運算裝置包括第三存儲單元、傳輸單元及運算單元,所述第三存儲單元預設存儲第一標準磁場強度及第二標準磁場強度;所述感應鑰匙校正系統包括:
低頻發射控制模塊,用於控制所述低頻發射單元依次發送第一低頻信號及第二低頻信號,所述第一低頻信號包含所述第一標準磁場強度值,所述第二低頻信號包含所述第二標準磁場強度值;所述第一標準磁場強度值與所述第二標準磁場強度值不相同;所述感應鑰匙依次接收所述第一低頻信號及所述第二低頻信號,並識別接收到之所述第一低頻信號之磁場強度為第一接收磁場強度值,且識別接收到之所述第二低頻信號之磁場強度為第二接收磁場強度值;
高頻發射控制模塊,用於控制所述高頻發射單元依次發送第一高頻信號及第二高頻信號,所述第一高頻信號及所述第二高頻信號分別包含所述第一接收磁場強度值及所述第二接收磁場強度值;
分析運算模塊,用於控制所述運算單元依次讀取所述第一標準磁場強度值及所述第一接收磁場強度值,及所述第二標準磁場強度值及所述第二接收磁場強度值;並計算出補償所述低頻接收單元所接收之接收磁場強度值及所述低頻發射單元所發射之標準磁場強度值間之誤差所需要之誤差補償演算法;及
校正模塊,用於控制所述傳輸單元向所述感應鑰匙發送所述補償演算法,以允許所述感應鑰匙在接收到下一低頻信號時運用所述補償演算法對其接收到的接收磁場強度值進行補償運算;
其中,所述低頻發射控制模塊還用於在判斷所述誤差未落入一預設之誤差範圍時,控制所述低頻發射單元繼續發送另一低頻信號,以允許感應鑰匙校正系統再次對所述智慧鑰匙進行校正,直至所述誤差落入所述預設之誤差範圍。
An inductive key correction system is applied to an inductive key, a signal source, and an arithmetic device; the inductive key includes a first storage unit, a low frequency receiving unit, a high frequency transmitting unit, and a processing unit; and the signal source includes a second storage unit And the low-frequency transmitting unit; the computing device includes a third storage unit, a transmitting unit, and an arithmetic unit, wherein the third storage unit presets a first standard magnetic field strength and a second standard magnetic field strength; the inductive key correction system includes:
a low frequency transmission control module, configured to control the low frequency transmitting unit to sequentially transmit a first low frequency signal and a second low frequency signal, wherein the first low frequency signal includes the first standard magnetic field strength value, and the second low frequency signal includes the a second standard magnetic field strength value; the first standard magnetic field strength value is different from the second standard magnetic field strength value; the sensing key sequentially receives the first low frequency signal and the second low frequency signal, and identifies and receives The magnetic field strength of the first low frequency signal is the first received magnetic field strength value, and the magnetic field strength of the received second low frequency signal is the second received magnetic field strength value;
a high frequency emission control module, configured to control the high frequency transmitting unit to sequentially transmit the first high frequency signal and the second high frequency signal, wherein the first high frequency signal and the second high frequency signal respectively comprise the first Receiving a magnetic field strength value and the second received magnetic field strength value;
An analysis operation module, configured to control the operation unit to sequentially read the first standard magnetic field strength value and the first received magnetic field strength value, and the second standard magnetic field strength value and the second received magnetic field strength value And calculating an error compensation algorithm required to compensate for an error between the received magnetic field strength value received by the low frequency receiving unit and the standard magnetic field strength value emitted by the low frequency transmitting unit; and a correction module for controlling the Transmitting unit sends the compensation algorithm to the induction key to allow the induction key to perform compensation operation on the received magnetic field strength value received by the sensing key when receiving the next low frequency signal;
The low frequency transmission control module is further configured to control the low frequency transmitting unit to continue transmitting another low frequency signal when determining that the error does not fall within a predetermined error range, to allow the inductive key correction system to The smart key is corrected until the error falls within the preset error range.
如申請專利範圍第1項所述之感應鑰匙校正系統,其改良在於,所述分析運算模塊還用於在判斷所述誤差落入所述預設之誤差範圍時,控制所述低頻發射單元停止發送低頻信號。The improvement of the inductive key correction system of claim 1, wherein the analysis operation module is further configured to control the low frequency transmitting unit to stop when determining that the error falls within the preset error range. Send low frequency signals. 如申請專利範圍第1項所述之感應鑰匙校正系統,其改良在於,所述分析運算模塊根據所述第一標準磁場強度值、所述第一接收磁場強度值、所述第二標準磁場強度值及所述第二接收磁場強度值,建立所述第一標準磁場強度值與所述第二標準磁場強度值間之第一函數關係,及建立所述第一接收磁場強度值與所述第二接收磁場強度值間之第二函數關係,並建立所述第一函數關係與所述第二函數關係間之映射函數關係,所述映射函數關係為所述誤差補償演算法。The improved key correction system of claim 1, wherein the analysis operation module is configured to determine the first standard magnetic field strength value, the first received magnetic field strength value, and the second standard magnetic field strength And a value of the second received magnetic field strength, establishing a first functional relationship between the first standard magnetic field strength value and the second standard magnetic field strength value, and establishing the first received magnetic field strength value and the first And receiving a second functional relationship between the magnetic field strength values, and establishing a mapping function relationship between the first functional relationship and the second functional relationship, the mapping function relationship being the error compensation algorithm. 如申請專利範圍第3項所述之感應鑰匙校正系統,其改良在於,所述映射函數關係由所述第一函數關係相對於所述第二函數關係之偏移量及斜率差確定。The improvement of the inductive key correction system of claim 3, wherein the mapping function relationship is determined by an offset and a slope difference of the first functional relationship with respect to the second functional relationship. 如申請專利範圍第1項所述之感應鑰匙校正系統,其改良在於,所述高頻發射控制模塊及所述校正模塊為存儲在所述第一存儲單元中,並可被所述第一存儲單元執行之可程式化之模塊。The improved key correction system of claim 1, wherein the high frequency emission control module and the correction module are stored in the first storage unit and can be stored by the first storage A modular module that the unit executes. 如申請專利範圍第1項所述之感應鑰匙校正系統,其改良在於,所述低頻發射控制模塊為存儲在所述第二存儲單元中並可被所述第二存儲單元執行之可程式化之模塊。The improved key correction system of claim 1, wherein the low frequency emission control module is programmable in the second storage unit and executable by the second storage unit Module. 如申請專利範圍第1項所述之感應鑰匙校正系統,其改良在於,元執行之可程式化之模塊。The improvement of the inductive key correction system described in claim 1 is an executable module that is executed by the element. 一種感應鑰匙校正方法,其應用於感應鑰匙、信號源及運算裝置上;所述感應鑰匙包括第一存儲單元、低頻接收單元高頻發射單元和處理單元;所述信號源包括第二存儲單元及低頻發射單元;所述運算裝置包括第三存儲單元、傳輸單元及運算單元,所述第三存儲單元預設存儲第一標準磁場強度、第二標準磁場強度及第三標準磁場強度;所述感應鑰匙校正方法包括步驟:
控制所述低頻發射單元發送第一低頻信號,所述第一低頻信號包含所述第一標準磁場強度值;所述感應鑰匙接收所述第一低頻信號,並識別接收到之所述第一低頻信號之磁場強度為第一接收磁場強度值;
控制所述高頻發射單元發送第一高頻信號,所述第一高頻信號包含所述第一接收磁場強度值;
控制所述通訊單元接收所述第一高頻信號;
控制所述運算單元讀取所述第一標準磁場強度值及所述第一接收磁場強度值,並計算所述第一標準磁場強度值及所述第一接收磁場強度值間之第一差值;
判斷若所述第一差值若未落入一預設之誤差範圍,則控制所述低頻發射單元發送第二低頻信號,所述第二低頻信號包含所述第二標準磁場強度值;所述第二標準磁場強度值與所述第一標準磁場強度值不相同;所述感應鑰匙接收所述第二低頻信號並識別接收到之所述第二低頻信號之磁場強度為第二接收磁場強度值;
控制所述高頻發射單元發送第二高頻信號,所述第二高頻信號包含所述第二接收磁場強度值;
控制所述通訊單元接收所述第二高頻信號;
控制所述運算單元讀取所述第二標準磁場強度值及所述第二接收磁場強度值,並計算出補償所述低頻接收單元所接收之接收磁場強度值及所述低頻發射單元所發射之標準磁場強度值間之誤差所需要之誤差補償演算法;
控制所述傳輸單元向所述感應鑰匙發送所述補償演算法;
控制所述低頻發射單元發送第三低頻信號,所述第三低頻信號包含所述第三標準磁場強度值;所述感應鑰匙接收所述第三低頻信號並識別接收到之所述第三低頻信號之磁場強度為第三接收磁場強度值;
控制所述處理單元運用所述映射函數關係將所述第三接收磁場強度值重新計算後,得到一近似標準磁場強度值;
控制所述高頻發射單元發射第三高頻信號,所述第三高頻信號包含所述似標標準磁場強度值;
控制所述運算單元讀取所述第三標準磁場強度值及所述近似標準磁場強度值,並計算所述第三標準磁場強度值及所述近似標準磁場強度值間之第二差值;
判斷若所述第二差值若未落入所述預設之誤差允許範圍,則繼續上述校正步驟,直至所述第一差值或所述第二差值落入所述預設之誤差允許範圍。
An inductive key correction method is applied to an inductive key, a signal source, and an arithmetic device; the inductive key includes a first storage unit, a low frequency receiving unit high frequency transmitting unit, and a processing unit; the signal source includes a second storage unit and a low frequency transmitting unit; the computing device includes a third storage unit, a transmitting unit, and an arithmetic unit, wherein the third storage unit presets a first standard magnetic field strength, a second standard magnetic field strength, and a third standard magnetic field strength; The key correction method includes the steps:
Controlling the low frequency transmitting unit to transmit a first low frequency signal, the first low frequency signal including the first standard magnetic field strength value; the sensing key receiving the first low frequency signal and identifying the first low frequency received The magnetic field strength of the signal is the first received magnetic field strength value;
Controlling the high frequency transmitting unit to transmit a first high frequency signal, the first high frequency signal including the first received magnetic field strength value;
Controlling the communication unit to receive the first high frequency signal;
Controlling the operation unit to read the first standard magnetic field strength value and the first received magnetic field strength value, and calculating a first difference between the first standard magnetic field strength value and the first received magnetic field strength value ;
Determining, if the first difference does not fall within a predetermined error range, controlling the low frequency transmitting unit to transmit a second low frequency signal, the second low frequency signal including the second standard magnetic field strength value; The second standard magnetic field strength value is different from the first standard magnetic field strength value; the induction key receives the second low frequency signal and identifies the received magnetic field strength of the second low frequency signal as a second received magnetic field strength value ;
Controlling the high frequency transmitting unit to transmit a second high frequency signal, the second high frequency signal including the second received magnetic field strength value;
Controlling the communication unit to receive the second high frequency signal;
Controlling, by the operation unit, the second standard magnetic field strength value and the second received magnetic field strength value, and calculating a compensation received magnetic field strength value received by the low frequency receiving unit and the low frequency transmitting unit The error compensation algorithm required for the error between the standard magnetic field strength values;
Controlling the transmission unit to send the compensation algorithm to the inductive key;
Controlling the low frequency transmitting unit to transmit a third low frequency signal, the third low frequency signal including the third standard magnetic field strength value; the sensing key receiving the third low frequency signal and identifying the received third low frequency signal The magnetic field strength is a third received magnetic field strength value;
Controlling, by the processing unit, recalculating the third received magnetic field strength value by using the mapping function relationship to obtain an approximate standard magnetic field strength value;
Controlling the high frequency transmitting unit to emit a third high frequency signal, the third high frequency signal including the scaled standard magnetic field strength value;
Controlling the operation unit to read the third standard magnetic field strength value and the approximate standard magnetic field strength value, and calculating a second difference between the third standard magnetic field strength value and the approximate standard magnetic field strength value;
Determining, if the second difference does not fall within the preset error tolerance range, continuing the correcting step until the first difference or the second difference falls within the preset error tolerance range.
如申請專利範圍第8項所述之感應鑰匙校正系統,其改良在於,判斷若所述第一差值或第二差值若落入所述預設之誤差範圍時,結束上述校正步驟。The improvement of the inductive key correction system according to claim 8 is characterized in that it is judged that the correction step is ended if the first difference or the second difference falls within the preset error range. 如申請專利範圍第8項所述之感應鑰匙校正系統,其改良在於,所述分析運算模塊根據所述第一標準磁場強度值、所述第一接收磁場強度值、所述第二標準磁場強度值及所述第二接收磁場強度值,建立所述第一標準磁場強度值與所述第二標準磁場強度值間之第一函數關係,及建立所述第一接收磁場強度值與所述第二接收磁場強度值間之第二函數關係,並建立所述第一函數關係與所述第二函數關係間之映射函數關係,所述映射函數關係為所述誤差補償演算法。The improved key correction system of claim 8 is characterized in that the analysis operation module is based on the first standard magnetic field strength value, the first received magnetic field strength value, and the second standard magnetic field strength And a value of the second received magnetic field strength, establishing a first functional relationship between the first standard magnetic field strength value and the second standard magnetic field strength value, and establishing the first received magnetic field strength value and the first And receiving a second functional relationship between the magnetic field strength values, and establishing a mapping function relationship between the first functional relationship and the second functional relationship, the mapping function relationship being the error compensation algorithm.
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