TW201633839A - Planar heating element and semiconductor manufacturing device provided with same - Google Patents

Abstract

To provide a planar heating element and a semiconductor manufacturing device using the same which can make the temperature distribution uniform in a bent part of a resistance heating element when an object is being heated, and which also offer excellent responsiveness when the temperature is being raised or lowered. A planar heating element, in which a resistance heating element 31-1 is disposed in a pattern, is provided with at least a slit 32-1 that extends along the extending direction of the resistance heating element, at a bent part of the resistance heating element disposed in the pattern.

Description

Surface heating element and semiconductor manufacturing apparatus having planar heating element

The present invention relates to a planar heat generating body in which a resistor heating element that generates heat by energization is used to heat an object, and a semiconductor manufacturing apparatus including the planar heat generating body.

Conventionally, in the planar heat generating body used for heating an object, it is necessary to uniformly heat the object. For example, in a planar heat generating body used for heating a wafer in a semiconductor manufacturing apparatus, in order to achieve a miniaturization of a pattern formed on the wafer, the temperature in the wafer surface can be uniformly heated. Very important. The reason is as follows, that is, the temperature of the wafer is related to an etching rate (etching rate). For example, if the temperature of the wafer is high, etching proceeds, and the depth of etching becomes deeper than when the temperature is low. Therefore, if the temperature in the wafer surface is not uniform, the temperature in the wafer surface is different depending on the position in the plane, and the depth of etching of the wafer is also different depending on the position in the plane, and the wafer is etched. The quality or productivity of the product is reduced.

Further, in the case where heating or cooling is repeatedly performed in the semiconductor process, the responsiveness at the time of temperature rise and temperature reduction of the planar heat generating body heated by the wafer becomes important. That is to say, in the past, the wafer was etched under one type of etching conditions. In recent years, a plurality of types of etching conditions are sequentially switched to perform a multistep process of etching the wafer, and the temperature of the wafer needs to be adjusted to The optimum temperature for each etching condition. Therefore, when the planar heating element that heats the wafer has low responsiveness during temperature rise and temperature drop, the wafer must wait until the temperature reaches a predetermined temperature, and the throughput of the etching process is lowered.

However, in the above-described planar heat generating body, a pair of resistance heating elements are energized in a bent portion such as a folded portion in the resistance heating element arranged in a pattern, and a temperature distribution is generated inside and outside the curved portion. ). In other words, the current is distributed to the outside of the curved portion of the resistance heating element, and the current distribution is concentrated on the inner side of the curved portion of the resistance heating element. The inside of the curved portion is more heated, and the outside of the curved portion is less likely to generate heat. In the case where the line width of the resistance heating element arranged in a pattern is narrow, the temperature distribution of the above-described curved portion is difficult to be a problem. However, in the case where the line width is wide, the inner side and the outer side are formed by the curved portion of the resistance heating element. The temperature distribution becomes a problem.

In the prior art, as a technique for uniformizing the in-plane temperature distribution of the planar heating element, Patent Document 1 discloses that the temperature is uniform in the planar heating element in which the resistance heating element is arranged in a substantially concentric shape. The configuration is such that the folded-back portions of the resistance heating elements are close to each other, or the section resistance of the folded-back portions is reduced by widening the folded-back portions. Further, Patent Document 2 discloses a configuration in which a heat equalizing layer having excellent thermal conductivity is placed on a resistance heating element layer to improve temperature unevenness.

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 11-191535 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2004-134238

However, the configuration in which the folded-back portions are close to each other described in Patent Document 1 cannot be applied to a pattern in which the patterned resistance heating element has a wide line width and a narrow line therebetween, and since the line is narrowed, it is impossible to further Close to the configuration. Further, in the configuration in which the line width of the resistance heating element is widened in order to reduce the section resistance of the folded portion, the heat generation inside the curved portion of the resistance heating element is higher than the outside, and conversely, the temperature uniformity of the planar heating element is lowered. In addition, in the configuration in which the heat equalizing layer of Patent Document 2 is disposed, it takes time to heat the heat equalizing layer, and the responsiveness at the time of temperature rise and temperature drop of the planar heat generating element is inferior. Further, since the flexibility is lowered, it is difficult to use it as a flexible planar heat generating body such as a silicone rubber heater.

In view of the above, it is an object of the present invention to provide a planar heat generation in which a temperature distribution in a curved portion of a resistance heating element during heating of a target object is uniform, and responsiveness at the time of temperature rise and temperature drop is also good. A semiconductor manufacturing device having a planar heating element.

According to the above-described knowledge, the planar heat generating element of the present invention is characterized in that the resistance heating element is arranged in a pattern, and the bending portion disposed in the pattern-shaped resistance heating element is disposed along the resistance. At least one slit extending in the direction in which the body extends.

In a preferred embodiment of the present invention, the slit is disposed in the resistance heating element such that the electric resistance inside the curved portion is higher than the resistance on the outer side. In this case, since the current concentrated inside the curved portion of the resistance heating element can be distributed to the outside, the uniformity of the temperature of the planar heating element can be further improved.

In another preferred embodiment of the present invention, the width of the slit is equal to or less than a distance between wirings at intervals of the resistance heating elements. In this case, the insulation between the wiring lines with large potential difference can be more fully obtained.

According to still another preferred embodiment of the present invention, the width of the inner portion and the outer portion of the curved portion divided by the slit is unequal, and the width of the inner portion is narrower than the width of the outer portion. In this case, the temperature of the inner portion and the outer portion of the curved portion of the resistance heating body can be made more uniform.

In still another preferred embodiment of the present invention, the slit is formed by a plurality of slits. Further, in this case, the slit provided on the inner side of the curved portion among the plurality of slits is more preferable than the slit length disposed on the outer side. In either case, the temperature of the inner portion and the outer portion of the curved portion of the resistance heating body can be made more uniform.

According to still another preferred embodiment of the present invention, the pattern-shaped resistance heating element is formed by thermal spraying. In this case, the pattern of the resistance heating body can be formed more preferably.

Further, the semiconductor manufacturing apparatus of the present invention is characterized in that the planar heat generating body described above is included in order to heat the wafer or the glass substrate.

As described above, according to the planar heat generating element of the present invention, at least one slit extending along the extending direction of the resistance heat generating body is disposed in the bent portion of the resistance heat generating body, whereby the resistance at the time of heating of the object can be obtained. The temperature distribution in the curved portion of the heating element is uniform, and since the soaking layer for uniformizing the temperature distribution or the soaking layer can be made thinner, the responsiveness at the time of temperature rise and temperature drop can be favorably maintained. Further, according to the semiconductor manufacturing apparatus of the present invention, since the planar heat generating element having the uniform temperature distribution is provided, the yield of the product can be improved by using the planar heat generating body.

<Basic Configuration of the Surface Heating Element Used in the Embodiment of the Present Invention> FIGS. 1(a), (b) and 2 are views for explaining the planar heat generating body used as the embodiment of the present invention. A diagram of the planar heating elements 1 and 11 of an example of a basic configuration.

Fig. 1 (a) is an exploded perspective view showing an example of a basic configuration of a planar heat generating element used in an embodiment of the present invention, and Fig. 1 (b) shows the surface in a state in which a cover film is omitted. In the example shown in FIGS. 1( a ) and ( b ), the metal foil of SUS (Steel Special Use Stainless) is first etched to obtain a patterned resistance heating element 2 . Next, the planar heat generating element 1 is obtained by sandwiching the obtained resistance heating element 2 between a base film 3 made of an insulator and a cover film 4 made of an insulator.

Fig. 2 is a partially omitted perspective view showing another example of the basic configuration of the planar heat generating element used in the embodiment of the present invention. In the example shown in Fig. 2, first, tungsten or the like is melted to be composed of an insulator. On the substrate 12, a patterned resistance heating element 13 is obtained. In order to obtain the patterned resistance heating element 13, it may be masked and melted into a pattern, and may be melted into the entire surface of the substrate 12, and then the molten layer may be removed into a pattern by machining or sandblasting. Also. Then, the insulator spray coating film 14 is placed on the substrate 12 and the obtained resistance heating element 13 to melt the insulating material such as alumina to obtain the planar heat generating body 11.

In the example shown in FIGS. 1(a) and 1(b), current is supplied between the terminals 5 and 6 formed at the both end portions of the patterned resistance heating element 2 in the planar heating element 1 described above. Flowing, and in the example shown in Fig. 2, current flow is performed by energizing the lead wires 15, 16 connected to the both ends of the patterned resistor heating body 13 of the planar heat generating body 11 described above. Then, the planar heat generating bodies 1 and 11 are each heated. The object can be heated by the heat generating planar heating elements 1 and 11.

<Features of the embodiment of the present invention> The embodiment of the present invention is characterized in that a planar heat generating body having a basic configuration in which the above-described resistance heating element is arranged in a pattern is arranged in a pattern-like resistor The bent portion of the heating element is provided with at least one slit extending substantially in the extending direction of the resistance heating body. In the following, the [resistance heating element], the [bending portion], and the [slotting] which are features of the planar heating element of the present embodiment will be described in order.

(1) In the planar heat generating body according to the embodiment of the present invention, the heat generating element is usually patterned by a method using a metal foil, printing of a conductive material, or coating of a conductive material. Resistive heating element.

When a resistance heating element patterned with a metal foil is produced, the metal foil may be patterned by mechanical processing, laser processing, etching processing, sand blasting, or the like. Generally, the resistance heating element composed of the metal foil thus formed is used by being sandwiched by an insulating sheet or a plate material. The material of the metal foil can be used as a well-known material used as a resistance heating body, and stainless steel (stainless steel), nickel alloy, and other suitable volume resistivity, temperature characteristic, and mechanical property can be used ( Mechanical property).

When a resistive heating element patterned by printing is produced, it is also possible to screen-print the conductive material on the insulating substrate using a plate of the corresponding pattern, and use an ink jet or a dispenser (dispenser) The conductive material may be drawn and patterned. As the conductive material used for printing, a conductive paste or the like which is well known in the past can be used.

When a resistive heating element patterned by coating is produced, a conductive material is sprayed on the insulating substrate, PVD (Physical Vapor Deposition equipment), and CVD (Chemical Vapor Deposition equipment: A patterned heating element such as chemical vapor deposition or plating may be used. The pattern may be formed by masking in advance and performing melting of a conductive material, etc., and after forming a coating film on the entire insulating substrate by spraying of a conductive material or the like, the coating film is machined, Laser processing, sandblasting, etc. can also be formed. As the conductive material used for the spraying or the like, a well-known material such as a metal such as tungsten or a nickel alloy or a semiconductive ceramics such as tantalum carbide can be used.

(2) In the planar heat generating element according to the embodiment of the present invention, the curved portion of the resistance heating element refers to a linear pattern or a pattern of a pattern in which a constant linear state is maintained among the patterns of the resistance heating element. The curved pattern of the pattern of the curvature of the state of the curvature bends the portion of the pattern.

(a) to (d) of FIG. 3 are views for explaining an example of a curved portion of the resistance heating element in the planar heat generating body according to the embodiment of the present invention. In the example shown in FIG. 3(a), the curved portion 22-1 (the portion surrounded by a broken line) in the pattern in which the resistance heating element 21-1 composed of the straight line pattern is folded back by 180 degrees is displayed. In the example shown in FIG. 3(b), the curved portion 22-2 (the portion surrounded by a broken line) in the pattern in which the resistance heating element 21-2 composed of the curved pattern is folded back by 180° is displayed. In the example shown in FIG. 3(c), the curved portion 22-3 (portion surrounded by a broken line) in the pattern in which the resistance heating element 21-3 composed of the straight line pattern is bent into a 90-degree circular arc shape is displayed. In the example shown in FIG. 3(d), the curved portion 22-4 (the portion surrounded by a broken line) in the pattern in which the resistance heating element 21-4 composed of the straight line pattern is bent at a right angle of 90° is displayed.

In the examples shown in Figs. 3(a) to 3(d), the inner portion of the curved portion is indicated by A, and the outer portion of the curved portion is indicated by B. Further, in the above-described example, the portion surrounded by the broken line is referred to as a curved portion, the inner portion of the curved portion, and the outer portion of the curved portion are examples, and are not limited to the region. The curved portion shown, the inner portion of the curved portion, and the outer portion of the curved portion.

(3) The slit in the planar heat generating body according to the embodiment of the present invention is a curved portion of the resistance heating element arranged in a pattern in the planar heat generating body as described above, and substantially along the resistance heating element At least one of the extending direction of the pattern is provided. This slit is a direction in which the resistance heating element is penetrated in the thickness direction.

In the method of forming a slit in the curved portion of the resistance heating element, a slit is formed in the resistance heating element in advance, and the resistance heating element may be disposed on the substrate, and the resistor heating element may be disposed on the substrate. It is also possible to remove the resistance heating element to form a slit. In addition, it is also possible to add or extend the slit while confirming the heat distribution or the resistance distribution of the curved portion in the resistance heating element, and it is also possible to partially fill the slit by additional coating or the like.

When a slit is disposed in one curved portion, the slit is not provided at a position where the curved portion is divided into two portions in such a manner that the inner portion of the curved portion is equal to the outer portion, but is located near the inner portion of the curved portion. The position setting slit is preferred. When a plurality of slits are arranged in the curved portion, it is preferable to arrange them in such a manner that the width of the pattern divided by the slit is narrower toward the inside. Further, it is also preferable to arrange the slit so that the slit of the inner portion of the bent portion is longer than the slit of the outer portion. Further, it is also preferable to combine the shape or arrangement of the slit described above.

The width of the slit and the pattern of the resistance heating element are the same as or narrower than the line spacing of the pattern. Since the potential difference between the pattern and the pattern of the resistance heating element is large, it is necessary to widely take the distance between the lines in order to insulate the portion, because the potential difference disposed in the vicinity of the slit of the curved portion is smaller than that. The arrangement of the slit in the longitudinal direction may be parallel to the outer edge or the inner edge of the curved portion of the resistance heating element, and may not be parallel to the outer edge or the inner edge of the curved portion of the resistance heating element. Further, in one slit, the width of the slit may be arranged in the same width, and the width of the slit may not be arranged in the same width.

4(a) to 4(f) are views for explaining an example of a slit of a curved portion of a resistance heating element disposed in the planar heating element of the embodiment of the present invention. The symbol C in the figure indicates a center line which is located at the center in the width direction of the pattern and extends along the pattern.

In the example shown in Fig. 4 (a), in the curved portion in the pattern in which the resistance heating element 31-1 composed of the straight line pattern is bent at a right angle of 90, a slit 32-1 (reverse white portion) is arranged. It is parallel to the inner edge of the curved portion and is located on the inner side. In the example shown in FIG. 4(b), in the curved portion in the pattern in which the resistance heating element 31-2 composed of the straight line pattern is bent at a right angle of 90°, it is parallel to the inner edge of the curved portion, and is divided. Two slits 32-2-1, 32-2-2 (reverse white portions) are arranged such that the width of the pattern becomes narrower toward the inner side. In the example shown in FIG. 4(c), in the curved portion in the pattern in which the resistance heating element 31-3 composed of the straight line pattern is bent at a right angle of 90°, in parallel with the inner edge of the curved portion, and the inner portion The slits 32-3-1, 32-3-2 (reverse white portions) are disposed such that the length of the slit 32-3-1 is longer than the length of the slit 32-3-2 of the outer portion.

In the example shown in FIG. 4(d), in the curved portion in the pattern in which the resistance heating element 31-4 composed of the straight line pattern is bent at a right angle of 90°, it is not parallel to the inner edge and the outer edge of the curved portion and A slit 32-4 (reverse white portion) is disposed in such a manner as to protrude from the wedge shape on the side of the outer portion. In the example shown in FIG. 4(e), in the curved portion in the pattern in which the resistance heating element 31-5 composed of the straight line pattern is bent at a right angle of 90°, in parallel with the inner edge of the curved portion and the inner portion, Further, a slit 32-5 (reverse white portion) is disposed such that the width of the central portion of the slit is wider than the width of both end portions. In the example shown in FIG. 4(f), in the curved portion in the pattern in which the resistance heating element 31-6 composed of the straight line pattern is bent at a right angle of 90°, the central portion of the slit is curved into an arc shape and two A slit 32-6 (reflexed portion) is disposed on the inner side portion in such a manner that the end portion is parallel to the inner edge of the curved portion.

Fig. 4(g) is an equivalent circuit showing a pattern in the vicinity of the curved portion of Fig. 4(a). The pattern 31-1 in the vicinity of the curved portion of Fig. 4(a) is an outer curved portion of the outer side of the slit 32-1 among the curved portions extending in a right angle in the figure, extending in the vertical direction in the drawing. The inner curved portion of the inner side of the slit 32-1 is formed by four paths extending in the straight line portion in the left-right direction in the drawing, and the resistance of the path of the inlet straight portion is RA, and the resistance of the path of the inner curved portion is RB. The resistance of the path of the outer curved portion is RC, and the resistance of the path of the straight portion of the outlet is RD. As shown in the figure, the equivalent circuit is connected in series with the resistor RB and the resistor RC connected in parallel with each other. Resistance RD. Here, since the path of the outer curved portion and the path of the inner curved portion have a long length and a wide width, the resistance RB of the path of the inner curved portion has a higher resistance than the resistance RC of the path of the outer curved portion, and flows through the outer curved portion. The current of the path is larger than the path flowing through the inner curved portion, and the outer side of the curved portion of the pattern is also sufficiently heated.

In the example shown in FIG. 5(a), in the curved portion in the pattern in which the resistance heating element 31-7 composed of the straight line pattern is bent into a 90-degree circular arc shape, a slit 32-7 (the reverse white portion) is used. ) is disposed parallel to the inner edge of the curved portion and on the inner side portion. In the example shown in FIG. 5(b), in the curved portion in the pattern in which the resistance heating element 31-8 composed of the straight line pattern is bent into a 90-degree circular arc shape, the central portion of the slit is bent at a right angle of 90°. A slit 32-8 (reverse white portion) is disposed in such a manner that both end portions are parallel to the inner edge.

In the example shown in FIG. 5(c), in the curved portion in the pattern in which the resistance heating element 31-9 composed of the straight line pattern is folded back by 180, the inner long slit 32-9-1 (the reverse white portion) The two slits 32-9-2 and 32-9-3 (reverse white portions) which are short on the outer side are respectively arranged in parallel on the inner edge of the curved portion. In the example shown in FIG. 5(d), in the curved portion in the pattern in which the resistance heating element 31-10 composed of the straight line pattern is folded back by 180, the inner long slit 32-10-1 (the reverse white portion) The outer short slits 32-10-2 (reverse white portions) are arranged in parallel on the inner edge of the curved portion. In the example shown in FIG. 5(e), in the curved portion in the pattern in which the resistance heating element 31-11 composed of the linear pattern is folded back into a circular arc shape, the inner long slit 32-11- 1 (anti-white part), short side opening 32-11-2 (anti-white part).

In the example shown in FIG. 5(f), in the curved portion in the pattern in which the resistance heating element 31-12 composed of the straight line pattern is bent into a crank shape, a slit 32-12 (reverse white portion) is disposed in the curved portion On the center line C of the bend. In the example shown in FIG. 5(g), in the curved portion in the pattern in which the resistance heating element 31-13 composed of the straight line pattern is bent into a crank shape, the two slits 32-13-1, 32-13 are used. -2 (reverse white portions) are each disposed in an inner side portion parallel to the curved portion and on the inner side portion.

4(a) to (f) and the examples shown in FIGS. 5(a) to 5(g) are at least one slit of a curved portion of the resistance heating element disposed in the planar heating element according to the embodiment of the present invention. As an example, the slit of the present invention is not limited to the slit as exemplified above. By providing the slits, the temperature distribution in the curved portion of the resistance heating element when the object is heated can be made uniform, and the soaking layer for uniformizing the temperature distribution or the soaking layer can be changed. Since it is thin, the responsiveness at the time of temperature rise and temperature drop can be favorably maintained.

In the following, Example 1 in which the slit is provided in the curved portion of the resistance heating element, Comparative Example 1 in which no slit is provided, and Comparative Example 2 in which the resistance heating element pattern shown in Patent Document 1 is used, the object to be heated is obtained. The temperature distribution of the object) was compared.

<Example 1> A predetermined thickness of an insulating spray coating film was coated on an aluminum alloy substrate having a diameter of 100 mm and a thickness of 10 mm, and then tungsten was sprayed at a thickness of 150 μm to form a tungsten spray coating film as a resistance heating element. Then, the tungsten spray coating film is subjected to a blasting treatment for shielding, and the line width of the pattern is 10 mm, and the distance between the lines is 2 mm. As shown in FIG. 6(a), a slightly inner portion of the curved portion is formed to be coated with tungsten. The pattern P of the resistance heat generating body is formed so that the film penetrates the slit S having a width of 0.5 mm in the thickness direction. After forming an insulating spray coating film by spraying on the pattern P of the resistance heating element, surface polishing was performed so that the thickness of the formed insulating spray coating film was 550 μm, and the surface of Example 1 was obtained. heating stuff.

A silicon plate having a thickness of 1 mm was placed on the insulating spray coating film on the top of the obtained planar heat generating body as a heating target, and 1 kW of electric power was applied between the terminals T1 and T2 of the pattern P of the resistance heating element. The temperature distribution measuring device for sale measures the temperature distribution of the seesaw. The measurement result of the temperature distribution is shown in Fig. 6(b).

<Comparative Example 1> A planar heat generating body of Comparative Example 1 was obtained as shown in Fig. 7 (a) except that the slit S was not provided. Then, in the same manner as in the first embodiment, a crucible having a thickness of 1 mm was placed on the insulating spray coating film on the top of the obtained planar heat generating body as a heated body, between the terminals T1 and T2 of the pattern P of the resistance heating element. The electric power of 1 kW was applied, and the temperature distribution of the raft was measured using a commercially available temperature distribution measuring device. The measurement result of the temperature distribution is shown in Fig. 7 (b).

<Comparative Example 2> As shown in Fig. 8 (a), the pattern of the resistance heating element has a line width of 2 mm, a line-to-line distance of 10 mm, and a gap of the folded-back portion of 6 mm, and the other configuration is the same as that of the first embodiment. The planar heat generating body of Comparative Example 2 was obtained. Then, in the same manner as in the first embodiment, a crucible having a thickness of 1 mm was placed on the insulating spray coating film on the top of the obtained planar heat generating body as a heated body, and applied between the terminals T1 and T2 of the pattern P of the electric resistance heating element. The temperature distribution of the raft was measured using a commercially available temperature distribution measuring device of 1 kW of electricity. The measurement result of the temperature distribution is shown in Fig. 8(b).

By comparing the results of the temperature distribution of the first embodiment shown in FIG. 6(b) with the results of the comparative example 1 shown in FIG. 7(b) and the comparative example 2 shown in FIG. 8(b), it is known that In the temperature distribution of the heating body, the temperature uniformity of Example 1 was the highest. Accordingly, according to the embodiment of the present invention, by providing the slit in the curved portion of the resistance heating element, the uniformity of the temperature of the object to be heated can be improved.

According to the above description, it is apparent that the planar heat generating body according to the embodiment of the present invention can uniformize the temperature distribution in the curved portion of the resistance heating element when the object is heated, and the soaking layer for uniformizing the temperature distribution Alternatively, the soaking layer can be made thin, so that the responsiveness at the time of temperature rise and temperature drop can be favorably maintained.

Fig. 9 is a cross-sectional view showing an embodiment of a semiconductor manufacturing apparatus of the present invention including the planar heat generating body of the present invention. In the semiconductor manufacturing apparatus of the embodiment, the surface heating element 104 including the above-described resistance heating element 103 of the embodiment of the present invention is provided on an electrostatic chuck 102 in an etching chamber 101. The wafer 105 or the glass substrate adsorbed on the planar heat generating body 104 by the electrostatic chuck 102 is heated by the resistance heating element 103 while maintaining the temperature at a predetermined temperature, and is etched by the plasma 106 on the wafer 105. Or, by forming a circuit pattern on a glass substrate to manufacture a semiconductor article, according to the semiconductor manufacturing apparatus of this embodiment, by using the planar heat generating body 104 having a uniform temperature distribution, the yield of the semiconductor article can be improved. Further, in the semiconductor manufacturing apparatus of the above-described embodiment, the surface-shaped heating element 104 is provided on the electrostatic chuck 102. Instead of providing the planar heating element 104 on the electrostatic chuck 102, an electrostatic chuck integrated with the planar heating element 104 is used. 102, that is, a built-in heater electrostatic chuck can also be used.

In the planar heat generating body of the present invention and the semiconductor manufacturing apparatus including the planar heat generating body, since the temperature distribution of the object to be heated can be made uniform, and the responsiveness at the time of temperature rise and temperature drop can be favorably maintained, the planar heat generating body is used. A semiconductor manufacturing apparatus using an electrostatic chuck, a heater stage, a silicone rubber heater, or the like, or an electrostatic chuck or a heater platform or a silicone rubber heater using a planar heating element can be suitably used.

1, 11‧‧‧ planar heating element
2, 13, 21-1, 21-2, 21-3, 21-4, 31-1~31-13‧‧‧ resistance heating body
3‧‧‧base film
4‧‧‧ Cover film
5, 6‧‧‧ terminals
12‧‧‧Substrate
14‧‧‧Insulator spray coating
15, 16‧‧‧ lead
22-1, 22-2, 22-3, 22-4‧‧‧bend
32-1, 32-4~32-8, 32-12, 32-2-1, 32-2-2, 32-3-1, 32-3-2, 32-9-1, 32-9- 2, 32-9-3, 32-10-1, 32-10-2, 32-11-1, 32-11-2, 32-13-1, 32-13-2‧‧‧ slit
101‧‧‧etching reaction chamber
1 02‧‧‧Electrostatic suction cup
103‧‧‧Resistive heating element
104‧‧‧Face heating body
105‧‧‧ Wafer
106‧‧‧ Plasma
C‧‧‧ center line
P‧‧‧pattern of resistance heating element
RA, RB, RC, RD‧‧‧ resistance
S‧‧‧ slitting
T1, T2‧‧‧ terminals

Fig. 1 (a) is an exploded perspective view showing an example of a basic configuration of a planar heat generating element used in an embodiment of the present invention, and (b) shows the surface in a state in which a cover film is omitted. A top view of the basic structure of the heating element. FIG. 2 is a partially omitted perspective view showing another example of the basic configuration of the planar heat generating element used in the embodiment of the present invention. (a) to (d) of FIG. 3 are views for explaining an example of a curved portion of the resistance heating element in the planar heat generating body according to the embodiment of the present invention. 4(a) to 4(f) are views for explaining an example of a slit of a curved portion of a resistance heating element disposed in a planar heating element according to an embodiment of the present invention, and (g) is for explaining (a) A diagram of an equivalent circuit of a pattern near a curved portion. 5(a) to 5(g) are views for explaining another example of the slit of the curved portion of the electric resistance heating element disposed in the planar heating element of the embodiment of the present invention. Fig. 6 (a) is a view showing a pattern of a resistance heating element of the planar heating element in the first embodiment, and Fig. 6 (b) is a view showing a temperature distribution when the object to be heated is used to heat the object to be heated. Fig. 7 (a) is a view showing a pattern of a resistance heating element of the planar heating element in Comparative Example 1, and (b) is a view showing a temperature distribution when the heating element is heated by using the planar heating element. Fig. 8 (a) is a view showing a pattern of a resistance heating element of the planar heating element in Comparative Example 2, and Fig. 8 (b) is a view showing a temperature distribution when the heating element is heated by using the planar heating element. Fig. 9 is a cross-sectional view showing an embodiment of a semiconductor manufacturing apparatus of the present invention including the planar heat generating body of the present invention.

31-1, 31-2, 31-3, 31-4, 31-5, 31-6‧‧‧ resistance heating elements

32-1, 32-4, 32-5, 32-6‧‧‧ slit

RA, RB, RC, RD‧‧‧ resistance

Claims (8)

In the planar heating element, the resistance heating element is arranged in a pattern, and at least one slit extending along the extending direction of the resistance heating body is disposed in a curved portion of the resistance heating element arranged in the pattern. . The planar heat generating body according to claim 1, wherein the slit is disposed in the resistance heating element such that the electric resistance inside the curved portion is higher than the resistance on the outer side. The planar heating element according to claim 1 or 2, wherein the width of the slit is equal to or less than a distance between wirings of the resistance heating elements. The planar heating element according to claim 1 or 2, wherein the width of the inner portion and the outer portion of the curved portion divided by the slit is unequal width, and the width of the inner portion is wider than the width of the outer portion narrow. The planar heating element of claim 1 or 2, wherein the slit is composed of a plurality of slits. The planar heat generating body according to claim 5, wherein the slit provided inside the bent portion of the plurality of slits is longer than the slit disposed outside. A planar heat generating body according to claim 1 or 2, wherein the patterned heat generating body is formed by spraying. A semiconductor manufacturing apparatus characterized by comprising the planar heating element according to any one of claims 1 to 7 in order to heat a wafer or a glass substrate.