TW201632647A - Titanium sputtering target and manufacturing method for same - Google Patents
Titanium sputtering target and manufacturing method for same Download PDFInfo
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- TW201632647A TW201632647A TW104131215A TW104131215A TW201632647A TW 201632647 A TW201632647 A TW 201632647A TW 104131215 A TW104131215 A TW 104131215A TW 104131215 A TW104131215 A TW 104131215A TW 201632647 A TW201632647 A TW 201632647A
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 239000010936 titanium Substances 0.000 title claims abstract description 118
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 115
- 238000005477 sputtering target Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 31
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 claims description 3
- 239000013256 coordination polymer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 25
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 20
- 238000005520 cutting process Methods 0.000 description 12
- 238000005242 forging Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本發明係關於一種半導體裝置之薄膜形成用濺鍍靶，尤其關於一種鈦製濺鍍靶及其製造方法。 The present invention relates to a sputtering target for thin film formation of a semiconductor device, and more particularly to a titanium sputtering target and a method of manufacturing the same.
近年來，使用鈦製濺鍍靶，進行對各種電子零件之成膜。 In recent years, a titanium sputtering target has been used to form a film for various electronic parts.
關於鈦製濺鍍靶，就薄膜之均一性與生產效率之觀點而言，於一部分製程中使用凹(concave)形狀之濺鍍靶。例如，於專利文獻1中，記載有「靶具有劃分形成在靶之周邊端部間延伸之可濺鍍之靶面的正面、及於周邊端部間大致整體性地劃分形成凹形之可濺鍍之靶表面。於1個實施形態中，整體性之凹形係於由傾斜區域包圍之大致平坦之中心區域劃分形成。於1個實施形態中，傾斜區域以約5度至約30度之範圍傾斜，且靶周圍之厚度較中心區域之厚度厚。」。 Regarding the titanium sputtering target, a concave-shaped sputtering target is used in a part of the process from the viewpoint of film uniformity and production efficiency. For example, Patent Document 1 describes that "the target has a front surface which is formed by dividing a sputterable target surface extending between the peripheral end portions of the target, and a substantially transparent partition is formed between the peripheral end portions. In one embodiment, the integral concave shape is formed by a substantially flat central region surrounded by the inclined region. In one embodiment, the inclined region is from about 5 degrees to about 30 degrees. The range is inclined and the thickness around the target is thicker than the thickness of the central area.".
於圖1中表示將靶切削成凹狀之一例。以往，凹形狀之鈦製濺鍍靶係切削鈦製之壓延板而製作。若切削習知之鈦製壓延板而製作凹形狀之鈦製濺鍍靶，則由於在平面部與楔形(taper)部晶向存在大差異，故而存在於利用濺鍍進行成膜時，膜厚之均勻性差之問題。 An example in which the target is cut into a concave shape is shown in FIG. Conventionally, a concave-shaped titanium sputtering target has been produced by cutting a rolled plate made of titanium. When a titanium-made sputtering target is formed by cutting a conventional titanium rolled plate, the crystal orientation of the flat portion and the tapered portion is greatly different, so that the film thickness is formed when the film is formed by sputtering. The problem of poor uniformity.
就習知技術來看，例如，於專利文獻2中，記載有「一種中 空陰極磁控(HCM)濺鍍靶之製造方法，其係為了形成披覆層-靶集成體，而包含將濺鍍靶材料之板(10)接合於披覆層材料之片材(12)之階段、以及利用金屬加工技術將上述披覆層-靶集成體成形為中空陰極磁控濺鍍靶(20)之階段(參照請求項1)」。然而，如代表圖3所示般，該文獻1係由垂直壁與水平壁所構成之深鍋狀靶，於縱向及橫向上靶之組織(結晶方位)形態必然不同，可以說難以形成均一性(均勻性)優異之薄膜。 As far as the conventional technology is concerned, for example, in Patent Document 2, "one kind is described" A method for manufacturing a hollow cathode magnetron (HCM) sputtering target for forming a cladding layer-target assembly, comprising a sheet (10) for bonding a plate (10) of a sputtering target material to a coating material (12) At the stage of forming the above-mentioned cladding layer-target assembly into a hollow cathode magnetron sputtering target (20) by a metal working technique (refer to claim 1). However, as shown in Fig. 3, the document 1 is a deep pot-shaped target composed of a vertical wall and a horizontal wall, and the shape (crystal orientation) of the target in the longitudinal direction and the lateral direction is inevitably different, and it can be said that it is difficult to form uniformity. (Uniformity) Excellent film.
又，於專利文獻3中，記載有「一種帶底之圓筒狀金屬靶之製造方法，其係帶底之圓筒狀之形狀、且其內曲面被濺鍍之靶之製造方法，其特徵在於：於藉由旋壓加工而進行成形加工後，實施熱處理而對金屬靶之微細組織進行控制」。該文獻2如圖1所示般，為深鍋狀之靶，於縱向及橫向上靶之組織(結晶方位)形態必然不同，與文獻1同樣地，可以說難以形成均一性(uniformity)優異之薄膜。 Further, Patent Document 3 describes a method for producing a cylindrical metal target with a bottom, which is a cylindrical shape having a bottom, and a method of manufacturing a target whose inner curved surface is sputtered. The heat treatment is performed to control the fine structure of the metal target after the forming process is performed by spin processing. As shown in FIG. 1, this document 2 is a deep pot-shaped target, and the structure (crystal orientation) of the target is inevitably different in the longitudinal direction and the lateral direction. As in the literature 1, it can be said that it is difficult to form uniformity. film.
於專利文獻4中，記載有「一種製造濺鍍用靶組裝體者。本方法包含首先製造靶-插入件之階段。靶-插入件具有降伏強度、直徑、高度、平坦上表面及圓錐形背面。其次，製造支持板。支持板具有與靶-插入件之直徑對應之圓筒形凹部。圓筒形凹部具有較靶-插入件之高度小之深度及較靶-插入件之降伏強度小之降伏強度。最後，藉由將靶-插入件加壓至支持板之圓筒形凹部而將靶-插入件接合於支持板，從而形成靶組裝體。凹形靶組裝體含有具有圓錐形背面之靶-插入件」(參照圖1)。認為其雖然靶之背面成為圓錐形，但表面為平板狀，仍為習知型之靶，濺鍍效率亦為習知等級。 Patent Document 4 describes "a person who manufactures a target assembly for sputtering. This method includes a stage in which a target-insert is first manufactured. The target-insert has a descending strength, a diameter, a height, a flat upper surface, and a conical back surface. Secondly, a support plate is manufactured. The support plate has a cylindrical recess corresponding to the diameter of the target-insert. The cylindrical recess has a depth smaller than the height of the target-insert and is less than the drop strength of the target-insert. The strength of the fall. Finally, the target-insert is bonded to the support plate by pressurizing the target-insert to the cylindrical recess of the support plate, thereby forming a target assembly. The concave target assembly has a conical back surface. Target-insert" (refer to Figure 1). It is considered that although the back surface of the target is conical, the surface is flat, and it is still a conventional target, and the sputtering efficiency is also a conventional level.
於專利文獻5中，記載有「一種濺鍍靶之製造方法，其包含 如下階段：供給包含至少1個閥金屬之濺鍍金屬加工物；為了獲得壓延加工物而對該濺鍍金屬加工物進行橫向冷壓延；以及為了獲得成形之加工物而對該壓延加工物進行冷加工。(參照請求項1)」。然而，於該情形時，如圖1所示般，為中空杯狀之濺鍍靶，在縱向與橫向上靶之組織(結晶方位)形態不同，故而與文獻1、文獻2同樣地，可以說難以形成均一性(uniformity)優異之薄膜。 Patent Document 5 describes "a method of manufacturing a sputtering target, which includes a stage of: supplying a metallized workpiece comprising at least one valve metal; laterally cold rolling the molten metal workpiece in order to obtain a rolled workpiece; and cold working the rolled product in order to obtain a shaped workpiece . (Refer to Request Item 1)". However, in this case, as shown in FIG. 1, the hollow cup-shaped sputtering target has a different shape of the structure (crystal orientation) of the target in the longitudinal direction and the lateral direction. Therefore, similarly to the documents 1 and 2, it can be said that It is difficult to form a film excellent in uniformity.
以上所示之公知文獻並未根本性地解決在平面部與楔形部晶向存在大差異之問題及就薄膜之均一性及生產效率之觀點而言之問題。 The above-mentioned known documents do not fundamentally solve the problem of a large difference in the crystal orientation between the flat portion and the wedge portion and the viewpoint of the uniformity of the film and the production efficiency.
專利文獻1：日本特表2012-522894號 Patent Document 1: Japanese Special Form 2012-522894
專利文獻2：日本特開2001-98367號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2001-98367
專利文獻3：日本特開2002-161360號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2002-161360
專利文獻4：日本特表2004-530048號 Patent Document 4: Japanese Special Table 2004-530048
專利文獻5：日本特表2004-536958號 Patent Document 5: Japanese Special Table 2004-536958
關於鈦製濺鍍靶，就薄膜之均一性及生產效率之觀點而言，於一部分製程中使用凹形狀之濺鍍靶，但凹形狀之鈦製濺鍍靶係切削鈦製之壓延板而製作。如此，若切削鈦製之壓延板而製作成凹形狀，則在平面部與楔形部晶向存在大差異，故而存在於利用濺鍍進行成膜時，膜厚之均勻性差之問題。 Regarding the titanium sputtering target, a concave sputtering target is used in some processes from the viewpoint of film uniformity and production efficiency, but a concave titanium sputtering target is produced by cutting a titanium rolled plate. . When the rolled plate made of titanium is formed into a concave shape, the crystal orientation of the flat portion and the wedge portion greatly differs. Therefore, there is a problem in that the uniformity of the film thickness is poor when the film is formed by sputtering.
因此，本發明之課題在於提供一種鈦製濺鍍靶，其係代替切削而藉由對鈦製之壓延板進行加壓(鍛造)從而加工成凹形狀，藉此於平面部與楔形部減小晶向之差。 Accordingly, an object of the present invention is to provide a titanium sputtering target which is processed into a concave shape by pressurizing (forging) a rolled plate made of titanium instead of cutting, thereby reducing the planar portion and the tapered portion. The difference in crystal orientation.
再者，所謂上述凹形狀，意指如圖1所示般，相對之面為對稱地傾斜之面，若延長該面，則成為如圓錐般前端較細形狀之面。以下，設為意指相同之形狀者而使用。 In addition, the above-mentioned concave shape means that the opposing surface is a surface which is symmetrically inclined as shown in FIG. 1, and when this surface is extended, it is a surface which has a tapered front end. Hereinafter, it is assumed to be used in the case of the same shape.
為了解決上述課題，本發明提供以下之發明。 In order to solve the above problems, the present invention provides the following invention.
1)一種鈦製濺鍍靶，其係凹形狀者，其特徵在於：該靶具有平面部及楔形部，以下定義之Basal面配向率於平面部、楔形部均有70%以上，且若將(002)/((002)+(103)+(104)+(105))之平面部之值設為A，將楔形部之值設為B，則B/A<1.5。再者，「Basal面配向率」之測定方法係於靶各部位之濺鍍面，藉由X射線繞射法進行測定(以下，同樣)。 1) A titanium sputtering target having a concave shape, wherein the target has a flat portion and a wedge portion, and the Basal surface alignment ratio defined below is 70% or more in both the planar portion and the wedge portion, and The value of the plane portion of (002)/((002)+(103)+(104)+(105)) is A, and the value of the wedge portion is B, then B/A<1.5. Further, the measurement method of "Basal surface alignment ratio" is performed on the sputtering surface of each part of the target, and is measured by an X-ray diffraction method (hereinafter, the same).
I(hkl)：I(hkl)之測定強度 I(hkl): I (hkl) measurement intensity
I*(hkl)：JCPDS card之相對強度 I*(hkl): the relative strength of the JCPDS card
Σ I(hkl)/I*(hkl)=I(100)/I*(100)+I(002)/I*(002)+I(101)/I*(101)+I(102)/I*(102)+I(110)/I*(110)+I(103)/I*(103)+I(200)/I*(200)+I(112)/I*(112)+I(201)/I*(201)+I(202)/I*(202)+I(104)/I*(104)+I(203)/I*(203)+I(211)/I*(211)+I(114)/I*(114)+I(212)/I*(212)+I(105)/I*(105) Σ I(hkl)/I*(hkl)=I (100) /I* (100) +I (002) /I* (002) +I (101) /I* (101) +I (102) / I* (102) +I (110) /I* (110) +I (103) /I* (103) +I (200) /I* (200) +I (112) /I* (112) + I (201) /I* (201) +I (202) /I* (202) +I (104) /I* (104) +I (203) /I* (203) +I (211) /I * (211) +I (114) /I* (114) +I (212) /I* (212) +I (105) /I* (105)
2)如上述1)之鈦製濺鍍靶，其特徵在於：鈦製濺鍍靶之平均粒徑為20μm以下。(再者，平均粒徑意指由JIS規定之平均粒徑；以下，以相同之含義使用；於伸銅品，通常使用JIS H 0501所規定之線段法。) 2) The titanium sputtering target according to the above 1), wherein the titanium sputtering target has an average particle diameter of 20 μm or less. (Further, the average particle diameter means an average particle diameter specified by JIS; the following is used in the same meaning; in the case of a copper-strength product, the line method specified in JIS H 0501 is usually used.)
3)如上述1)或2)之鈦製濺鍍靶，其特徵在於：鈦製濺鍍靶之被濺鍍之部位係具有5N5以上純度的鈦，於靶之下方外周具備由4N5以下純度之鈦或CP鈦(工業用純鈦)構成的構件。 (3) The titanium sputtering target according to the above 1) or 2), wherein the sputtered portion of the titanium sputtering target has titanium having a purity of 5 N5 or more, and has a purity of 4 N5 or less outside the target. A member made of titanium or CP titanium (pure titanium for industrial use).
(再者，所謂上述被濺鍍之部位係因濺鍍而受到沖蝕之靶之部位；以下，以相同之含義使用。) (Further, the portion to be sputtered is a portion of the target that is eroded by sputtering; the following is used in the same meaning.)
4)如上述1)至3)中任一項之鈦製濺鍍靶，其特徵在於：上述靶之楔形部具備5°~30°之傾斜面。 The titanium sputtering target according to any one of the above 1 to 3, wherein the target wedge portion has an inclined surface of 5° to 30°.
再者，該情形時之傾斜面係以平面為基準，測定係利用三維測定機進行測定。於該情形時，亦包含角為圓形之情形。 In addition, in this case, the inclined surface is based on a plane, and the measurement system is measured by a three-dimensional measuring machine. In this case, the case where the corner is circular is also included.
5)一種鈦製濺鍍靶-背襯板(backing plate)組裝體，其特徵在於：鈦製濺鍍靶之被濺鍍之部位係具有5N5以上純度的鈦，於該鈦製濺鍍靶之下方，配置有銅合金之背襯板。 5) A titanium sputtering target-backing plate assembly, characterized in that the sputtered portion of the titanium sputtering target has titanium having a purity of 5 N5 or more, and the titanium sputtering target is used. Below, a copper alloy backing plate is placed.
6)一種鈦製濺鍍靶-背襯板組裝體，其特徵在於：鈦製濺鍍靶之被濺鍍之部位係具有5N5以上純度的鈦，於該靶之下方外周，配置有由具有4N5以下純度之鈦或CP鈦(工業用純鈦)構成的構件，進一步於此等之下方，配置有銅合金之背襯板。 6) A titanium sputtering target-backing plate assembly, characterized in that the sputtered portion of the titanium sputtering target has titanium having a purity of 5 N5 or more, and is disposed on the outer periphery of the target, having 4N5 A member made of titanium or CP titanium (industrial pure titanium) having the following purity is further disposed below the copper alloy backing plate.
又，本案提供以下之發明。 Moreover, the present invention provides the following invention.
7)一種鈦製濺鍍靶之製造方法，其特徵在於：對鈦製之壓延板進行模鍛，而製成具有平面部與楔形部之凹形狀，Basal面配向率於平面部、楔形 部均有70%以上，且(002)/((002)+(103)+(104)+(105))之平面部與楔形部之比即楔形部/平面部<1.5。 7) A method for producing a titanium sputtering target, characterized in that a rolled plate made of titanium is subjected to die forging to form a concave shape having a flat portion and a wedge portion, and the Basal surface is aligned to a flat portion and a wedge shape. The portion is more than 70%, and the ratio of the plane portion to the wedge portion of (002) / ((002) + (103) + (104) + (105)) is the wedge portion / plane portion < 1.5.
8)如上述7)之鈦製濺鍍靶之製造方法，其特徵在於：以使上述鈦製濺鍍靶之平均粒徑成為20μm以下之方式進行模鍛。 (8) The method of producing a titanium sputtering target according to the above (7), wherein the titanium sputtering target has an average particle diameter of 20 μm or less.
9)如上述7)或8)之鈦製濺鍍靶之製造方法，其特徵在於：將鈦製濺鍍靶之被濺鍍之部位設為具有5N5以上純度的鈦，於靶之下方外周設為由4N5以下純度之鈦或CP鈦(工業用純鈦)構成的構件，或者於具有5N5以上純度之鈦的下方配置銅合金之背襯板。 (9) The method for producing a titanium sputtering target according to the above 7) or 8), characterized in that the portion to be sputtered of the titanium sputtering target is titanium having a purity of 5 N5 or more, and is disposed outside the target. A backing plate of a copper alloy is disposed of a member made of titanium having a purity of 4 N5 or less or a titanium titanium (industrial pure titanium) or a titanium having a purity of 5 N5 or more.
10)如上述7)至9)中任一項之鈦製濺鍍靶之製造方法，其特徵在於：將上述靶之楔形部設為5°~30°之傾斜面。 The method for producing a titanium sputtering target according to any one of the above items 7 to 9 wherein the wedge-shaped portion of the target is an inclined surface of 5° to 30°.
11)一種鈦製濺鍍靶-背襯板組裝體之製造方法，其特徵在於：將鈦製濺鍍靶之被濺鍍之部位設為具有5N5以上純度的鈦，於靶之下方外周配置由4N5以下純度之鈦或CP鈦(工業用純鈦)構成的構件，進一步於此等之下方，配置銅合金之背襯板並將此等擴散接合，或者於具有5N5以上之純度鈦的下方配置銅合金之背襯板並進行擴散接合。 11) A method for producing a titanium sputtering target-backing plate assembly, wherein a portion to be sputtered of a titanium sputtering target is titanium having a purity of 5 N5 or more, and is disposed on the outer periphery of the target below A member made of titanium having a purity of 4 N5 or less or a titanium titanium (industrial pure titanium) is further disposed below the copper alloy backing plate and diffusion-bonded thereto, or disposed below the titanium having a purity of 5 N5 or more. The backing plate of the copper alloy is diffusion bonded.
習知之凹形狀之鈦製濺鍍靶係切削鈦製之壓延板而製作，但若切削鈦製之壓延板而製作成凹形狀，則在平面部與楔形部晶向存在大差異，故而存在於利用濺鍍進行成膜時，膜厚之均勻性差之問題。本案發明係代替切削而藉由對鈦製之壓延板進行加壓(鍛造)從而加工成凹形狀，藉此於平面部與楔形部減小晶向之差，從而提供特性優異之鈦製濺鍍靶。 The concave sputtering target of the conventional concave shape is produced by cutting a rolled plate made of titanium. However, when a rolled plate made of titanium is formed into a concave shape, there is a large difference in the crystal orientation between the flat portion and the wedge portion. When the film is formed by sputtering, the uniformity of the film thickness is poor. The invention of the present invention is processed into a concave shape by pressurizing (forging) a rolled plate made of titanium instead of cutting, thereby reducing the difference in crystal orientation between the flat portion and the wedge portion, thereby providing titanium sputtering excellent in characteristics. target.
藉此，具有如下優異之效果：能夠不改變習知之濺鍍特性， 而形成均一性(uniformity)優異之薄膜，從而能夠提高發展微細化、高積體化之半導體製品之良率或可靠性。 Thereby, it has an excellent effect of being able to not change the conventional sputtering characteristics, By forming a film excellent in uniformity, it is possible to improve the yield or reliability of a semiconductor product which is developed to be finer and more integrated.
圖1係表示切削習知之鈦製之壓延板而製造靶之步驟的說明圖(左圖)、及表示靶之平面部、楔形部之平面指數與配向率之關聯的圖(右圖)。 1 is an explanatory view showing a step of manufacturing a target by cutting a rolled plate made of titanium, and is a view showing a relationship between a plane index of a target portion and a wedge portion and an alignment ratio (right drawing).
圖2係表示本案發明之藉由加壓(鍛造)步驟而製造靶之步驟之說明圖。 Fig. 2 is an explanatory view showing a step of producing a target by a pressurizing (forging) step of the present invention.
圖3係表示本案發明之藉由加壓(鍛造)步驟所製作的靶(左圖)之平面部與楔形部之平面指數與配向率之關聯的圖(右圖)。 Fig. 3 is a view showing the relationship between the plane index and the alignment ratio of the plane portion and the wedge portion of the target (left image) produced by the pressurizing (forging) step of the present invention (right drawing).
以下，對用以實施本案發明之形態進行說明。 Hereinafter, a mode for carrying out the invention of the present invention will be described.
如圖2及圖3所示般，本發明之鈦製濺鍍靶為凹形狀，具備平面部及楔形部。 As shown in FIGS. 2 and 3, the titanium sputtering target of the present invention has a concave shape and includes a flat portion and a wedge portion.
而且，本發明之鈦製濺鍍靶之特徵在於：Basal面配向率於平面部、楔形部均有70%以上，且(002)/((002)+(103)+(104)+(105))之平面部與楔形部之比即楔形部/平面部<1.5。此係本案發明之重大特徵之一。 Further, the titanium sputtering target of the present invention is characterized in that the Basal plane alignment ratio is 70% or more in the plane portion and the wedge portion, and (002) / ((002) + (103) + (104) + (105) The ratio of the plane portion to the wedge portion, that is, the wedge portion/planar portion <1.5. This is one of the major features of the invention of this case.
於製造該鈦製濺鍍靶時，如圖2所示般，對鈦製之壓延板進行模鍛而製作。藉由製成此種構造，能夠於平面部與楔形部減小晶向之差， 可不改變習知之濺鍍特性，而形成均一性(uniformity)優異之薄膜。 When the titanium sputtering target was produced, as shown in FIG. 2, a rolled plate made of titanium was formed by die-forging. By forming such a structure, it is possible to reduce the difference in crystal orientation between the flat portion and the wedge portion. It is possible to form a film excellent in uniformity without changing the conventional sputtering characteristics.
較理想為以此方式製作而成之鈦製濺鍍靶係以平均粒徑成為20μm以下之方式進行模鍛。再者，模鍛係使用模具鍛造成特定之形狀之方法，為通常使用之技術用語。於本說明書中，以相同之含義使用。 It is preferable that the titanium sputtering target produced in this manner is subjected to die forging so that the average particle diameter is 20 μm or less. Further, the die forging is a method of forging a specific shape using a die, and is a technical term that is generally used. In this specification, the same meaning is used.
其原因在於：一般而言，結晶粒徑微細且均一者之濺鍍特性較佳。但是，於該範圍以外，亦能夠根據用途而使用。上述條件僅表示較佳之範圍。 The reason for this is that, in general, the crystal grain size is fine and the sputtering characteristics of the uniform one are better. However, outside of this range, it can also be used according to the use. The above conditions are only indicative of the preferred range.
又，較理想為鈦製濺鍍靶之被濺鍍之部位係具有5N5(99.9995%)以上之純度之鈦，於靶之下方外周係由4N5以下之純度之鈦或CP鈦(工業用純鈦)構成的構件。其原因在於：藉由將構件設為與習知製品相同之鈦而使靶之導熱率或導電率與習知製品等同，從而能以與習知相同之條件進行濺鍍。但是，於該條件以外，亦可根據用途而使用。上述條件僅表示較佳之範圍。 Further, it is preferable that the sputtered portion of the titanium sputtering target has titanium having a purity of 5N5 (99.9995%) or more, and the outer periphery of the target is made of titanium having a purity of 4N5 or less or CP titanium (industrial pure titanium). ) the components that make up. This is because the thermal conductivity or electrical conductivity of the target is made equivalent to a conventional article by using the member as the titanium of the conventional article, so that sputtering can be performed under the same conditions as those conventionally known. However, other than this condition, it can also be used according to a use. The above conditions are only indicative of the preferred range.
純度5N5以上之鈦，意指如下之鈦：含有Ag、Al、B、Bi、Ca、Cd、Cl、Co、Cr、Cu、Fe、K、Li、Mg、Mn、Mo、Na、Ni、P、Pb、Si、Sn、Th、U、V、W、Zn、Zr作為金屬雜質，但其等之合計值為5ppm以下，且氧值未達150ppm。以下，以相同之含義使用。 Titanium having a purity of 5 N5 or more means titanium as follows: Ag, Al, B, Bi, Ca, Cd, Cl, Co, Cr, Cu, Fe, K, Li, Mg, Mn, Mo, Na, Ni, P Pb, Si, Sn, Th, U, V, W, Zn, and Zr are metal impurities, but the total value thereof is 5 ppm or less, and the oxygen value is less than 150 ppm. Hereinafter, it is used in the same meaning.
又，較理想為上述靶之楔形部具備5°~30°之傾斜面。其原因在於：若角度太陡，則變形部之結晶組織會發生變化，而可能對濺鍍特性產生影響。但是，於該條件以外，亦可根據用途而使用。上述條件僅表示較佳之範圍。 Further, it is preferable that the wedge portion of the target has an inclined surface of 5 to 30 degrees. The reason is that if the angle is too steep, the crystal structure of the deformation portion changes, which may affect the sputtering characteristics. However, other than this condition, it can also be used according to a use. The above conditions are only indicative of the preferred range.
再者，靶之楔形部係上述凹形狀之楔形部，相對之面意指對稱地傾斜之面。以下，以相同之含義使用。 Further, the wedge portion of the target is a wedge-shaped portion of the concave shape described above, and the opposite surface means a surface that is symmetrically inclined. Hereinafter, it is used in the same meaning.
根據以上所述，能夠提供一種鈦製濺鍍靶-背襯板組裝體，其中，鈦製濺鍍靶之被濺鍍之部位為具有5N5以上之純度之鈦，且於靶之下方外周具有由4N5以下之純度之鈦或CP鈦(其意指「工業用純鈦」，以下同樣)構成的構件，進一步於其等之下方，具備銅合金之背襯板，或者於具有5N5以上之純度之鈦的下方配置銅合金之背襯板。 According to the above, it is possible to provide a titanium sputtering target-backing plate assembly in which the sputtered portion of the titanium sputtering target is titanium having a purity of 5 N5 or more, and has a periphery on the lower periphery of the target. A member made of titanium having a purity of 4 N5 or less or CP titanium (which means "pure titanium for industrial use", the same applies hereinafter), further having a backing plate of a copper alloy or the like having a purity of 5 N5 or more. A copper alloy backing plate is disposed under the titanium.
其次，基於實施例對本發明進行說明。以下所示之實施例係為了容易理解，並非藉由該等實施例限定本發明。即，基於本發明之技術思想之變形及其他實施例當然包含於本發明。 Next, the present invention will be described based on examples. The embodiments shown below are for the purpose of easy understanding and are not intended to limit the invention. That is, variations and other embodiments based on the technical idea of the present invention are of course included in the present invention.
(實施例1) (Example 1)
藉由如圖2所示般使用上下之模具對純度為5N5(99.9995%)之Ti壓延板進行模鍛，而製作厚度為14mm、平面部之直徑為320mm、楔形(傾斜面)部之外徑為450mm、楔形角度為13°之凹形狀之靶。平均結晶粒徑於平面部、楔形部均為9μm。 A Ti-rolled sheet having a purity of 5N5 (99.9995%) was swaged by using a mold of the upper and lower sides as shown in Fig. 2, and a diameter of 14 mm, a diameter of a flat portion of 320 mm, and an outer diameter of a wedge-shaped (inclined surface) portion were produced. It is a target of a concave shape of 450 mm and a wedge angle of 13°. The average crystal grain size was 9 μm in both the flat portion and the wedge portion.
其次，於靶之傾斜面之下表面之間隙插入4N5Ti製之環狀之保持構件，並配置於Cu合金製之背襯板上，其後進行模鍛，將靶、保持構件、背襯板擴散接合，而製作靶-背襯板組裝體。 Next, a ring-shaped holding member made of 4N5Ti is inserted into the gap between the lower surface of the inclined surface of the target, and placed on a backing plate made of Cu alloy, and then die-forged to spread the target, the holding member, and the backing plate. Bonding to make a target-backing plate assembly.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與楔形部之平面指數與配向率示於表1。 The plane index and the alignment ratio of the flat portion and the wedge portion when sputtering using the target-backing plate assembly are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為78.0%，於楔形部為81.5%，又，(002)/((002)+(103)+(104)+(105))之值於平面部為0.11，於楔形部為0.15，楔形部/平面部為1.40。其結果為膜厚之均勻性成為3.2%，粒子數成為3，為良好。 The orientation of the Basal plane with respect to the direction perpendicular to the target surface of the target-backing plate assembly is 78.0% at the plane portion and 81.5% at the wedge portion, and (002)/((002)+(103) The value of +(104)+(105)) is 0.11 in the plane portion, 0.15 in the wedge portion, and 1.40 in the wedge portion/planar portion. As a result, the uniformity of the film thickness was 3.2%, and the number of particles was 3, which was good.
再者，配向係利用X射線繞射裝置進行測定，均勻性係利用KLA-Tencor公司製造之OmniMap(RS-100)進行測定所得者。又，粒子係利用KLA-Tencor公司製造之粒子計數器(Surfscan SP1-DLS)進行測定所得者，對0.2μm以上者進行計數。 In addition, the alignment was measured by an X-ray diffraction apparatus, and the uniformity was measured by OmniMap (RS-100) manufactured by KLA-Tencor Co., Ltd. Further, the particles were measured by a particle counter (Surfscan SP1-DLS) manufactured by KLA-Tencor Co., Ltd., and those of 0.2 μm or more were counted.
(實施例2) (Example 2)
藉由使用上下之模具對純度為5N5之Ti壓延板進行模鍛，而製作厚度為14mm、平面部之直徑為350mm、楔形部之外徑為450mm、楔形角度為20°之凹形狀之靶。平均結晶粒徑於平面部、楔形部均為8μm。 A Ti-rolled plate having a purity of 5 N5 was swaged by using a mold of the upper and lower sides to prepare a concave-shaped target having a thickness of 14 mm, a diameter of a flat portion of 350 mm, an outer diameter of the wedge portion of 450 mm, and a wedge angle of 20°. The average crystal grain size was 8 μm in both the flat portion and the wedge portion.
其次，於靶之傾斜面之下表面之間隙插入4N5Ti製之環狀之保持構件，並將其配置於Cu合金製之背襯板上，其後進行模鍛，將靶、保持構件、背襯板擴散接合，而製作靶-背襯板組裝體。 Next, a ring-shaped holding member made of 4N5Ti is inserted into the gap between the lower surface of the inclined surface of the target, and is placed on a backing plate made of Cu alloy, followed by die forging, the target, the holding member, and the backing. The plates are diffusion bonded to form a target-backing plate assembly.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與楔形部之平面指數與配向率示於表1。 The plane index and the alignment ratio of the flat portion and the wedge portion when sputtering using the target-backing plate assembly are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為78.6%，於楔形部為78.9%，配向(002)/((002)+(103)+(104)+(105))之值於平面部為0.22，於楔形部為0.35，楔形部/平面部為1.26。其結果為膜厚之均勻性成為3.5%，粒子數成為6，為良 好。 The orientation of the Basal plane perpendicular to the target surface of the target-backing plate assembly is 78.6% in the plane portion and 78.9% in the wedge portion, and the alignment (002)/((002)+(103)+ The value of (104) + (105)) is 0.22 in the plane portion, 0.35 in the wedge portion, and 1.26 in the wedge portion/planar portion. As a result, the uniformity of the film thickness was 3.5%, and the number of particles was 6, which was good. it is good.
(實施例3) (Example 3)
藉由使用上下之模具對純度5N5之Ti壓延板進行模鍛，而製作厚度為14mm、平面部之直徑為390mm、楔形部之外徑為450mm、楔形角度為30°之凹形狀之靶。平均結晶粒徑於平面部、楔形部均為9μm。 A Ti-rolled plate having a purity of 5 N5 was swaged by using a mold of the upper and lower sides to prepare a concave-shaped target having a thickness of 14 mm, a diameter of a flat portion of 390 mm, an outer diameter of the wedge portion of 450 mm, and a wedge angle of 30°. The average crystal grain size was 9 μm in both the flat portion and the wedge portion.
其次，於靶之傾斜面之下表面之間隙，插入4N5Ti製之環狀之保持構件，並將其配置於Cu合金製之背襯板上，其後進行模鍛，將靶、保持構件、背襯板擴散接合，而製作靶-背襯板組裝體。 Next, a ring-shaped holding member made of 4N5Ti is inserted into the gap between the lower surface of the inclined surface of the target, and is placed on a backing plate made of Cu alloy, and then forged, and the target, the holding member, and the back are placed. The liner is diffusion bonded to form a target-backing plate assembly.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與楔形部之平面指數與配向率示於表1。 The plane index and the alignment ratio of the flat portion and the wedge portion when sputtering using the target-backing plate assembly are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為78.4%，於楔形部為80.0%，配向(002)/((002)+(103)+(104)+(105))之值於平面部為0.13，於楔形部亦為0.13，楔形部/平面部為0.98。其結果為膜厚之均勻性成為3.8%，粒子數成為5，為良好。 The orientation of the Basal plane perpendicular to the target surface of the target-backing plate assembly is 78.4% in the plane portion and 80.0% in the wedge portion, and the alignment (002)/((002)+(103)+ The value of (104) + (105)) is 0.13 in the plane portion, 0.13 in the wedge portion, and 0.98 in the wedge portion/planar portion. As a result, the uniformity of the film thickness was 3.8%, and the number of particles was 5, which was good.
(比較例1) (Comparative Example 1)
藉由切削純度為5N5(99.9995%)之Ti壓延板，而製作如圖1之左側之圖所示般之形狀的厚度為14mm、平面部之直徑為320mm、楔形(傾斜面)部之外徑為450mm、楔形角度為13°之凹形狀之靶。平均結晶粒徑於平面部、楔形部均為8μm。 By cutting a Ti rolled sheet having a purity of 5N5 (99.9995%), the thickness of the shape as shown in the left side of Fig. 1 was 14 mm, the diameter of the flat portion was 320 mm, and the outer diameter of the wedge (inclined surface) portion was produced. It is a target of a concave shape of 450 mm and a wedge angle of 13°. The average crystal grain size was 8 μm in both the flat portion and the wedge portion.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與楔形部之平面指數與配向率示於表1。 The plane index and the alignment ratio of the flat portion and the wedge portion when sputtering using the target-backing plate assembly are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為76.9%，於楔形部為84.3%，配向(002)/((002)+(103)+(104)+(105))之值於平面部為0.09，於楔形部為0.42，楔形部/平面部為4.68。其結果為膜厚之均勻性成為5.6%，為不良。 The orientation of the Basal plane perpendicular to the target surface of the target-backing plate assembly is 76.9% at the plane portion and 84.3% at the wedge portion, and the alignment (002)/((002)+(103)+ The value of (104) + (105)) is 0.09 in the plane portion, 0.42 in the wedge portion, and 4.68 in the wedge portion/planar portion. As a result, the uniformity of the film thickness was 5.6%, which was a problem.
(比較例2) (Comparative Example 2)
藉由切削純度為5N5(99.9995%)之Ti壓延板，而製作如圖1之左側之圖所示般之形狀的厚度為14mm、平面部之直徑為320mm、楔形(傾斜面)部之外徑為450mm、楔形角度為13°之凹形狀之靶。平均結晶粒徑於平面部為18μm，於楔形部為19μm。 By cutting a Ti rolled sheet having a purity of 5N5 (99.9995%), the thickness of the shape as shown in the left side of Fig. 1 was 14 mm, the diameter of the flat portion was 320 mm, and the outer diameter of the wedge (inclined surface) portion was produced. It is a target of a concave shape of 450 mm and a wedge angle of 13°. The average crystal grain size was 18 μm in the plane portion and 19 μm in the wedge portion.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與楔形部之平面指數與配向率示於表1。 The plane index and the alignment ratio of the flat portion and the wedge portion when sputtering using the target-backing plate assembly are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為84.9%，於楔形部為76.5%，配向(002)/((002)+(103)+(104)+(105))之值於平面部為0.18，於楔形部為0.30，楔形部/平面部為1.68。其結果為，雖然膜厚之均勻性為3.7%為良好，但粒子多達25個，為不良。 The orientation of the Basal plane perpendicular to the target surface of the target-backing plate assembly is 84.9% in the plane portion and 76.5% in the wedge portion, and the alignment (002)/((002)+(103)+ The value of (104) + (105)) is 0.18 in the plane portion, 0.30 in the wedge portion, and 1.68 in the wedge portion/planar portion. As a result, although the uniformity of the film thickness was 3.7%, the particle size was as high as 25, which was a problem.
(比較例3) (Comparative Example 3)
藉由切削純度為5N5(99.9995%)之Ti壓延板，而製作如圖1之左側之圖所示般之形狀的厚度為14mm、平面部之直徑為320mm、楔形(傾斜面)部之外徑為450mm、楔形角度為35°之凹形狀之靶。平均結晶粒徑於平面部、楔形部均為9μm。 By cutting a Ti rolled sheet having a purity of 5N5 (99.9995%), the thickness of the shape as shown in the left side of Fig. 1 was 14 mm, the diameter of the flat portion was 320 mm, and the outer diameter of the wedge (inclined surface) portion was produced. It is a target of a concave shape of 450 mm and a wedge angle of 35°. The average crystal grain size was 9 μm in both the flat portion and the wedge portion.
將使用該靶-背襯板組裝體進行濺鍍之情形時之平面部與 楔形部之平面指數與配向率示於表1。 The plane portion and the case where the target-backing plate assembly is used for sputtering The plane index and alignment ratio of the wedge are shown in Table 1.
相對於與該靶-背襯板組裝體之靶表面垂直之方向之Basal面配向率於平面部為86.5%，於楔形部為85.2%，配向(002)/((002)+(103)+(104)+(105))之值於平面部為0.08，於楔形部為0.28，楔形部/平面部為3.41。其結果為膜厚之均勻性為5.1%而較差。 The orientation of the Basal plane perpendicular to the target surface of the target-backing plate assembly is 86.5% in the plane portion and 85.2% in the wedge portion, and the alignment (002)/((002)+(103)+ The value of (104) + (105)) is 0.08 in the plane portion, 0.28 in the wedge portion, and 3.41 in the wedge portion/planar portion. As a result, the uniformity of the film thickness was 5.1%, which was inferior.
[產業上之可利用性] [Industrial availability]
習知之凹形狀之鈦製濺鍍靶係切削鈦製之壓延板而製作，但若切削鈦製之壓延板而製作成凹形狀，則在平面部與楔形部晶向存在大差異，故而存在於利用濺鍍進行成膜時，膜厚之均勻性差之問題。本案發明係代替切削而藉由對鈦製之壓延板進行加壓(鍛造)從而加工成凹形狀，藉此於平面部與楔形部減小晶向之差，從而提供特性優異之鈦製濺鍍靶。藉此，能夠不改變習知之濺鍍特性，而形成均一性(uniformity)優異之薄膜，從而能夠提高發展微細化、高積體化之半導體製品之良率或可靠性，因此於產業上有用。 The concave sputtering target of the conventional concave shape is produced by cutting a rolled plate made of titanium. However, when a rolled plate made of titanium is formed into a concave shape, there is a large difference in the crystal orientation between the flat portion and the wedge portion. When the film is formed by sputtering, the uniformity of the film thickness is poor. The invention of the present invention is processed into a concave shape by pressurizing (forging) a rolled plate made of titanium instead of cutting, thereby reducing the difference in crystal orientation between the flat portion and the wedge portion, thereby providing titanium sputtering excellent in characteristics. target. In this way, it is possible to form a film having excellent uniformity without changing the conventional sputtering characteristics, and it is possible to improve the yield and reliability of a semiconductor product which is developed to be finer and more integrated, and thus it is industrially useful.
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| JPH05287524A (en) * | 1992-04-09 | 1993-11-02 | Anelva Corp | Target for magnetron sputtering |
| JPH09272965A (en) * | 1996-04-09 | 1997-10-21 | Toshiba Corp | Parts for vacuum film forming device, vacuum film forming device using the same, target and backing plate |
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