TW201628263A - Magneto-dielectric substrate - Google Patents

Magneto-dielectric substrate Download PDF

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Publication number
TW201628263A
TW201628263A TW104132390A TW104132390A TW201628263A TW 201628263 A TW201628263 A TW 201628263A TW 104132390 A TW104132390 A TW 104132390A TW 104132390 A TW104132390 A TW 104132390A TW 201628263 A TW201628263 A TW 201628263A
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magnetic
layer
dielectric
dielectric substrate
dielectric layer
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TW104132390A
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Chinese (zh)
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克里思帝 佩斯
凱爾 史賓瑞透
慕瑞里 瑟束牧德哈凡
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羅傑斯公司
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Abstract

A magneto-dielectric substrate includes a first dielectric layer, a second dielectric layer spaced apart from the first dielectric layer, and at least one magnetic reinforcing layer disposed between and in intimate contact with the first dielectric layer and the second dielectric layer.

Description

磁-介電基材 Magnetic-dielectric substrate 【優先權聲明】[Priority statement]

本申請案主張2014年10月2日提出申請之第62/058,833號美國臨時專利申請案之優先權,其揭露全文併於此以供參考。 The present application claims priority to U.S. Provisional Patent Application Serial No. No. No. No. No. No. No. No. No.

概言之,本發明係關於一種磁-介電基材、尤其係關於一種採用一磁-介電基材之金屬包層(metal clad)電路材料,且更具體而言,係關於一種採用一金屬包層電路積層板之天線,該金屬包層電路材料係採用一磁-介電基材。 In summary, the present invention relates to a magnetic-dielectric substrate, and more particularly to a metal clad circuit material using a magnetic-dielectric substrate, and more particularly to a An antenna of a metal clad circuit laminate, the metal clad circuit material using a magnetic-dielectric substrate.

較新之設計及製造技術已驅使電子組件之尺寸越來越小,例如電子積體電路晶片上之電感器、電子電路、電子封裝、模組及外殼(housing)、及UHF(超高頻)、VHF(特高頻)、及微波天線。天線尺寸之縮減尤其成了問題,且天線尺寸還未能以與其他電子組件相當之程度減小。使用磁-介電材料作為基材為一種已採用之減少電子組件大小之途徑。具體而言,鐵氧體(ferrite)、 鐵電體(ferroelectric)及多鐵性體(multiferroic)已經被廣泛研究作為具有增強之微波性質之功能材料。然而,該等材料並不能完全令人滿意,此乃因其不能提供期望之帶寬(bandwidth)或不能具有用於一既定應用之期望機械性能。 Newer design and manufacturing technologies have driven smaller and smaller electronic components, such as inductors, electronic circuits, electronic packages, modules and housings, and UHF (UHF) on electronic integrated circuit chips. , VHF (UHF), and microwave antennas. The reduction in antenna size is particularly problematic, and the antenna size has not been reduced to the extent comparable to other electronic components. The use of magnetic-dielectric materials as substrates is one approach that has been taken to reduce the size of electronic components. Specifically, ferrite, Ferroelectric and multiferroic have been extensively studied as functional materials with enhanced microwave properties. However, such materials are not entirely satisfactory because they do not provide the desired bandwidth or the desired mechanical properties for a given application.

因此,業內對於具有低介電及磁損失、低功率消耗、低偏置電場(biasing electric field)或磁場、及經改良的機械性質之磁-介電基材仍存在需求。若該等材料可容易地利用現有製作製程加工及整合,則此將係更大優勢。 Accordingly, there is still a need in the industry for magnetic-dielectric substrates having low dielectric and magnetic losses, low power consumption, low biasing electric fields or magnetic fields, and improved mechanical properties. This would be a greater advantage if the materials could be easily processed and integrated using existing manufacturing processes.

本發明之一實施態樣係包括一種磁-介電基材,該磁-介電基材具有一第一介電層、與該第一介電層間隔開之一第二介電層、及至少一個磁性加強層(magnetic reinforcing layer)設置於該第一介電層與該第二介電層之間且與該第一介電層及該第二介電層緊密接觸。 An embodiment of the invention includes a magnetic-dielectric substrate having a first dielectric layer, a second dielectric layer spaced apart from the first dielectric layer, and At least one magnetic reinforcing layer is disposed between the first dielectric layer and the second dielectric layer and in close contact with the first dielectric layer and the second dielectric layer.

結合附圖,依據以下詳細說明,上述特徵及優點及其他特徵及優點將係顯而易見的。 The above features, advantages and other features and advantages will be apparent from the description and appended claims.

10‧‧‧磁-介電基材/基材 10‧‧‧Magnetic-dielectric substrate/substrate

20‧‧‧電導體/導電接地層/接地平面 20‧‧‧Electrical conductor/conductive ground plane/ground plane

30‧‧‧電導體/導電元件/貼片 30‧‧‧Electrical Conductors / Conductive Components / Patches

32‧‧‧線內及平面內導電不連續性 32‧‧‧In-line and in-plane conductive discontinuities

34‧‧‧厚度 34‧‧‧ thickness

40‧‧‧信號線 40‧‧‧ signal line

50‧‧‧雙包層電路材料/銅包層積層板 50‧‧‧Double-clad circuit material/copper clad laminate

60‧‧‧天線 60‧‧‧Antenna

100‧‧‧第一介電層 100‧‧‧First dielectric layer

102、202‧‧‧層 102, 202‧‧ ‧

104、204‧‧‧部分浸漬 104, 204‧‧‧ Partial impregnation

106、206‧‧‧外表面 106, 206‧‧‧ outer surface

108‧‧‧第一厚度 108‧‧‧First thickness

200‧‧‧第二介電層 200‧‧‧Second dielectric layer

208‧‧‧第二厚度 208‧‧‧second thickness

300‧‧‧磁性加強層/磁性層 300‧‧‧Magnetic reinforcement/magnetic layer

302‧‧‧一側 302‧‧‧ side

304‧‧‧對側 304‧‧‧ opposite

400‧‧‧纖維磁性層 400‧‧‧fiber magnetic layer

500‧‧‧聚合物纖維或奈米纖維 500‧‧‧Polymer or nanofiber

502‧‧‧磁性粒子 502‧‧‧ magnetic particles

510‧‧‧連續聚合物層 510‧‧‧Continuous polymer layer

512‧‧‧磁性奈米粒子 512‧‧‧Magnetic Nanoparticles

610‧‧‧第一磁性層 610‧‧‧First magnetic layer

612‧‧‧第一磁性層厚度 612‧‧‧First magnetic layer thickness

620‧‧‧第二磁性層 620‧‧‧Second magnetic layer

622‧‧‧第二磁性層厚度 622‧‧‧Second magnetic layer thickness

630‧‧‧介電強化層 630‧‧‧Dielectric strengthening layer

632‧‧‧強化層厚度 632‧‧‧ Strengthening layer thickness

1000‧‧‧細節 1000‧‧‧Details

參照例示性非限制性圖式,其中在附圖中,相似元件係以相似方式編號:第1圖繪示根據一實施態樣的一具有磁性層之磁-介電基材之剖視圖;第2圖繪示根據一實施態樣的一採用第1圖之磁-介 電基材之金屬包層電路材料之剖視圖;第3圖繪示根據一實施態樣的第2圖之具有一圖案化貼片之金屬包層電路積層板之剖視圖;第4A圖繪示第1圖之一部分之細節視圖,其中為清晰起見省略交叉線細節,繪示根據一實施態樣的磁性層之一實施態樣之展開視圖;第4B圖繪示第1圖之一部分之替代細節視圖,其中為清晰起見省略交叉線細節,繪示根據一實施態樣的磁性層之一替代實施態樣之展開視圖;第4C圖繪示第1圖之一部分之替代細節視圖,其中為清晰起見省略交叉線細節,繪示根據一實施態樣的磁性層之一替代實施態樣之展開視圖;第4D圖繪示第1圖之一部分之替代細節視圖,其中為清晰起見省略交叉線細節,繪示根據一實施態樣的磁性層之一替代實施態樣之展開視圖;第4E圖繪示第1圖之一部分之替代細節視圖,其中為清晰起見省略交叉線細節,繪示根據一實施態樣的磁性層之一替代實施態樣之展開視圖;第5圖繪示根據一實施態樣的第2圖及第4C圖之金屬包層電路積層板之一部分的橫截面圖,其中為清晰起見省略交叉線細節;第6A圖繪示根據一實施態樣的一天線之等角視圖; 圖6B繪示根據一實施態樣的第6A圖之天線的側視圖;第6C圖繪示根據一實施態樣的第6A圖之天線的俯視圖;第7圖繪示在H場平面(H-field plane)處之比較波束寬度(beam width),其圖解說明一實施態樣之性能優勢;第8圖繪示在E場平面(E-field plane)處之比較波束寬度,其圖解說明一實施態樣之性能優勢;以及第9圖繪示比較阻抗帶寬(impedance bandwidth)及增益帶寬(gain bandwidth),其圖解說明一實施態樣之性能優勢。 Referring to the exemplary non-limiting drawings in which like elements are numbered in a similar manner: FIG. 1 is a cross-sectional view of a magnetic-dielectric substrate having a magnetic layer, according to an embodiment; The figure shows a magnetic-mediated using the first figure according to an embodiment. FIG. 3 is a cross-sectional view of a metal clad circuit laminate having a patterned patch according to a second embodiment; FIG. 4A is a first view; A detailed view of a portion of the drawing, in which the cross-line detail is omitted for clarity, an expanded view of one embodiment of the magnetic layer according to an embodiment is illustrated; and FIG. 4B is an alternate detail view of a portion of FIG. The cross-sectional detail is omitted for clarity, and an expanded view of one of the magnetic layers according to an embodiment is shown; FIG. 4C is an alternative detail view of a portion of the first figure, wherein Referring to the omitted cross-line detail, an expanded view of one of the magnetic layers according to an embodiment is shown; FIG. 4D is an alternate detail view of a portion of the first figure, in which the cross-line detail is omitted for clarity. FIG. 4E is an exploded view showing an alternative embodiment of the magnetic layer according to an embodiment; FIG. 4E is an alternate detail view of a portion of the first embodiment, wherein the cross-line detail is omitted for clarity, and the root is shown. One embodiment of an embodiment of the magnetic layer replaces the expanded view of the embodiment; FIG. 5 is a cross-sectional view of a portion of the metal clad circuit laminate of FIGS. 2 and 4C according to an embodiment, wherein The cross-line detail is omitted for clarity; FIG. 6A is an isometric view of an antenna according to an embodiment; 6B is a side view of the antenna according to FIG. 6A according to an embodiment; FIG. 6C is a top view of the antenna according to FIG. 6A according to an embodiment; and FIG. 7 is a view on the H field plane (H- Beam width at field plane, which illustrates the performance advantages of an embodiment; Figure 8 shows the comparison beamwidth at the E-field plane, which illustrates an implementation The performance advantage of the aspect; and Figure 9 illustrates the comparison of the impedance bandwidth and the gain bandwidth, which illustrates the performance advantages of an implementation aspect.

本文所闡述者係磁-介電基材及含有該等基材之電子裝置,例如電路材料及天線,其中該等磁-介電基材包括一設置於一介電材料中之磁性加強層。在基材中使用一磁性加強層係意外地提供優異的磁-電子性質與優異的機械性質之組合。該等基材可進一步藉由可容易地整合於既有電子裝置製造方法中之方法來加工。 Described herein are magnetic-dielectric substrates and electronic devices comprising such substrates, such as circuit materials and antennas, wherein the magnetic-dielectric substrates comprise a magnetic reinforcement layer disposed in a dielectric material. The use of a magnetic reinforcing layer in the substrate unexpectedly provides a combination of excellent magnetic-electronic properties and excellent mechanical properties. The substrates can be further processed by methods that can be easily integrated into existing electronic device manufacturing methods.

如由各個圖及隨附文本所顯示及闡述,一磁-介電基材具有一設置於一介電層內且與該介電層緊密接觸之磁性加強層。一般而言,該磁性加強層係設置於該介電層之中心上且具有一提供第一及第二介電層之結構強化之結構。在一實施態樣中,一導電層(conductive layer)係另外設置於該磁-介電基材之一側 上,以提供一可經構形用於多種電子裝置之單一包層電路材料。舉例而言,該導電層可經圖案化以提供一電路。在另一實施態樣中,該磁-介電基材係夾於一導電接地層(conductive ground layer)(接地平面)與一導電元件(貼片(patch))之間以提供一雙包層電路材料,其中一信號線(例如一同軸電纜(coaxial cable)或一饋電條帶(feeder strip))經設置與該貼片有信號通信(signal communication),以形成用於具有經改良帶寬之微型化高頻天線的基本結構。 As shown and described in the various figures and accompanying text, a magnetic-dielectric substrate has a magnetic reinforcement layer disposed within a dielectric layer in intimate contact with the dielectric layer. Generally, the magnetic reinforcing layer is disposed on the center of the dielectric layer and has a structure for providing structural reinforcement of the first and second dielectric layers. In one embodiment, a conductive layer is additionally disposed on one side of the magnetic-dielectric substrate To provide a single cladding circuit material that can be configured for use with a variety of electronic devices. For example, the conductive layer can be patterned to provide a circuit. In another embodiment, the magnetic-dielectric substrate is sandwiched between a conductive ground layer (ground plane) and a conductive element (patch) to provide a double clad layer. a circuit material, wherein a signal line (eg, a coaxial cable or a feeder strip) is disposed in signal communication with the patch to form an improved bandwidth The basic structure of the miniaturized high frequency antenna.

單一包層電路材料可藉由以下形成:形成磁性層;澆鑄或層壓(laminating)第一介電層及第二介電層至磁性層上;以及黏著(adhering)或層壓一導電層至第一介電層或第二介電層。雙包層電路材料可藉由以下形成:形成磁性層;澆鑄或層壓第一介電層及第二介電層至磁性層上;以及同時或依次將一第一導電元件及一第二導電元件施加至第一介電層及第二介電層。 The single cladding circuit material can be formed by: forming a magnetic layer; laminating or laminating the first dielectric layer and the second dielectric layer onto the magnetic layer; and adhering or laminating a conductive layer to a first dielectric layer or a second dielectric layer. The double clad circuit material can be formed by: forming a magnetic layer; casting or laminating the first dielectric layer and the second dielectric layer onto the magnetic layer; and simultaneously or sequentially placing a first conductive element and a second conductive The component is applied to the first dielectric layer and the second dielectric layer.

第1圖繪示一磁-介電基材10之一實施態樣,該磁-介電基材具有一第一介電層100、與第一介電層100均勻地間隔開之一第二介電層200、及一磁性加強層300設置於第一介電層100與第二介電層200之間且與第一介電層及第二介電層緊密接觸。可視需要存在額外介電層(由參考編號300大體描述)以向基材提供期望性質。 FIG. 1 illustrates an embodiment of a magnetic-dielectric substrate 10 having a first dielectric layer 100 uniformly spaced from the first dielectric layer 100 and a second The dielectric layer 200 and the magnetic enhancement layer 300 are disposed between the first dielectric layer 100 and the second dielectric layer 200 and are in close contact with the first dielectric layer and the second dielectric layer. An additional dielectric layer (generally described by reference numeral 300) may be present as needed to provide the substrate with the desired properties.

儘管於第1圖中磁性加強層300係由一具有「線厚度」之波形線描繪,但自本文揭示內容應瞭解該描述係用於一般說明目的且並不意欲限制本文所揭示實施態樣之範圍。舉例而言,在 一實施態樣中,第一介電層100、第二介電層200、及磁性加強層300可各自在結構上為連續的平面,或磁性加強層300可為一允許穿過加強層300中之空隙在第一介電層100與第二介電層200之間接觸之織造或非織造纖維材料,或磁性加強層300可為一浸漬(impregnate)有一聚合物之磁性織造材料。因此,在一實施態樣中,第一介電層100在結構上係巨觀上平面內連續的(in-plane continuous),第二介電層200在結構上係巨觀上平面內連續的,且磁性加強層300至少部分地在結構上係巨觀上平面內連續的。如本文所用,術語至少部分地在結構上巨觀上平面內連續係包括一實心層(solid layer)、及一可具有巨觀空隙之纖維層(例如一織造或非織造層)二者。當磁性加強層300為一實心層時,第一介電層100係與第二介電層200完全分開。當磁性加強層係呈一織造或非織造纖維之形式時,術語「第一介電層100」及「第二介電層200」係指磁性加強層300之各側上之區域,且並不將各個實施態樣限於二個單獨層。在一實施態樣中,磁性加強層300具有包括平面內磁性各向異性(in-plane magnetic anisotropy)之材料特性。第1圖繪示細節1000,其參考第4A圖、第4B圖、第4C圖、第4D圖、及第4E圖闡述於下文中。 Although the magnetic enhancement layer 300 is depicted by a wavy line having a "line thickness" in FIG. 1, it should be understood from the disclosure herein that the description is for general description purposes and is not intended to limit the embodiments disclosed herein. range. For example, in In one embodiment, the first dielectric layer 100, the second dielectric layer 200, and the magnetic reinforcement layer 300 may each be a continuous plane in structure, or the magnetic reinforcement layer 300 may be allowed to pass through the reinforcement layer 300. The woven or non-woven fibrous material having a void in contact between the first dielectric layer 100 and the second dielectric layer 200, or the magnetic reinforcing layer 300 may be an impregnated magnetic woven material having a polymer. Therefore, in an embodiment, the first dielectric layer 100 is structurally continuous in-plane continuous, and the second dielectric layer 200 is continuous in a superficial plane. And the magnetic reinforcement layer 300 is at least partially structurally continuous in a superficial plane. As used herein, the term at least partially in the superficially planar upper continuous system includes both a solid layer and a fibrous layer (eg, a woven or nonwoven layer) that may have a macroscopic void. When the magnetic reinforcement layer 300 is a solid layer, the first dielectric layer 100 is completely separated from the second dielectric layer 200. When the magnetic reinforcing layer is in the form of a woven or nonwoven fiber, the terms "first dielectric layer 100" and "second dielectric layer 200" refer to the regions on each side of the magnetic reinforcing layer 300 and are not The various embodiments are limited to two separate layers. In one embodiment, the magnetic reinforcement layer 300 has material properties including in-plane magnetic anisotropy. FIG. 1 depicts detail 1000, which is described below with reference to FIGS. 4A, 4B, 4C, 4D, and 4E.

磁性加強層300包含一磁性材料及一加強材料之組合,如下文進一步詳細闡述。第一介電層100及第二介電層200包含聚合物介電組合物,如下文進一步闡述。 The magnetic reinforcement layer 300 comprises a combination of a magnetic material and a reinforcing material, as explained in further detail below. The first dielectric layer 100 and the second dielectric layer 200 comprise a polymeric dielectric composition, as further described below.

磁-介電基材10可用於製造多種電子裝置。在一實施態樣中,一單一包層電路材料係包含一磁-介電基材10及一設置於 基材10之一側之導電金屬層(如下文進一步闡述)。圖案化該導電層(如下文進一步詳細闡述)提供一電路。 The magnetic-dielectric substrate 10 can be used to fabricate a variety of electronic devices. In one embodiment, a single cladding circuit material comprises a magnetic-dielectric substrate 10 and a A layer of conductive metal on one side of substrate 10 (as further described below). Patterning the conductive layer (as explained in further detail below) provides a circuit.

第2圖繪示第1圖之磁-介電基材10夾於電導體(electrical conductor)20與30之間以形成一雙包層電路材料50。在一實施態樣中,電導體20及30用作一導電接地層20、及一導電元件30,此將更詳細討論於下文中。 2 shows the magnetic-dielectric substrate 10 of FIG. 1 sandwiched between electrical conductors 20 and 30 to form a double clad circuit material 50. In one embodiment, electrical conductors 20 and 30 are used as a conductive ground plane 20, and a conductive element 30, as will be discussed in more detail below.

第3圖繪示一雙包層電路材料50,其具有經由蝕刻、碾磨(milling)、或任何其他適宜方法圖案化之導電元件30,此將更詳細討論於下文中。如本文所用,術語「圖案化」包括其中導電元件30具有線內(in-line)及平面內導電不連續性(conductive discontinuity)32之一配置。 Figure 3 illustrates a double clad circuit material 50 having conductive elements 30 patterned by etching, milling, or any other suitable method, as discussed in more detail below. As used herein, the term "patterning" includes a configuration in which the conductive element 30 has an in-line and in-plane conductive discontinuity 32.

纖維可包含磁性材料,例如,六角鐵氧體磁性材料。六角鐵氧體磁性材料可包含Sr、Ba、Co、Ni、Zn、V、Mn、或一包含上述之至少一者之組合,特別為Ba及Co。磁性材料可包含鐵磁性材料,例如鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或一包含上述磁性材料之至少一者之組合。磁性材料可包含六角鐵氧體、磁鐵礦(Fe3O4)、及MFe2O4,其中M包含Co、Ni、Zn、V、及Mn之至少一者,特別為Co、Ni、及Mn。磁性材料可包含一式MxFeyOz之金屬鐵氧化物(metal iron oxide),例如,MFe12O19、Fe3O4、MFe24O41、或MFe2O4,其中M係Sr、Ba、Co、Ni、Zn、V、及Mn;特別為Co、Ni、及Mn;或一包含上述之至少一者之組合。如此項技術中已知,六角鐵氧體係具有一六方結構之磁性鐵氧化物,其可包含Al、Ba、Bi、Co、Ni、Ir、Mn、Mg、 Mo、Nb、Nd、Sr、V、Zn、Zr、或一包含上述之一或多者之組合。六角鐵氧體之不同類型包括(但不限於)M型鐵氧體,例如BaFe12O19(BaM或鋇鐵氧體)、SrFe12O19(SrM或鍶鐵氧體)、及經鈷-鈦取代之M鐵氧體、Sr-或BaFe12-2 xCoxTixO19(CoTiM);Z型鐵氧體(Ba3Me2Fe24O41),例如Ba3Co2Fe24O41(Co2Z);Y型鐵氧體(Ba2Me2Fe12O22),例如Ba2Co2Fe12O22(Co2Y)或Mg2Y;W型鐵氧體(BaMe2Fe16O27),例如BaCo2Fe16O27(Co2W);X型鐵氧體(Ba2Me2Fe28O46),例如Ba2Co2Fe28O46(Co2X);以及U型鐵氧體(Ba4Me2Fe36O60),例如Ba4Co2Fe36O60(Co2U),其中在上述式中,Me係+2離子,且Ba可由Sr取代。特定六角鐵氧體更包含Ba及Co,視需要連同一或多種其他二價陽離子(經取代或摻雜)。磁性材料可包含鐵磁性碳化鈷(例如Co2C及Co3C相),例如,鋇鈷Z型六角鐵氧體(Co2Z鐵氧體)。磁性材料可以纖維及粒子中之一或二者之形式存在。 The fibers may comprise a magnetic material, such as a hexagonal ferrite magnetic material. The hexagonal ferrite magnetic material may comprise Sr, Ba, Co, Ni, Zn, V, Mn, or a combination comprising at least one of the foregoing, particularly Ba and Co. The magnetic material may comprise a ferromagnetic material such as a ferrite, a ferrite alloy, cobalt, a cobalt alloy, iron, an iron alloy, nickel, a nickel alloy, or a combination comprising at least one of the foregoing magnetic materials. The magnetic material may comprise hexagonal ferrite, magnetite (Fe 3 O 4 ), and MFe 2 O 4 , wherein M comprises at least one of Co, Ni, Zn, V, and Mn, particularly Co, Ni, and Mn. The magnetic material may comprise a metal iron oxide of the formula M x Fe y O z , for example, MFe 12 O 19 , Fe 3 O 4 , MFe 24 O 41 , or MFe 2 O 4 , wherein the M system is Sr, Ba, Co, Ni, Zn, V, and Mn; particularly Co, Ni, and Mn; or a combination comprising at least one of the foregoing. As is known in the art, a hexagonal ferrite system has a hexagonal structure of magnetic iron oxide, which may include Al, Ba, Bi, Co, Ni, Ir, Mn, Mg, Mo, Nb, Nd, Sr, V. , Zn, Zr, or a combination comprising one or more of the foregoing. Different types of hexagonal ferrites include, but are not limited to, M-type ferrites, such as BaFe 12 O 19 (BaM or barium ferrite), SrFe 12 O 19 (SrM or barium ferrite), and cobalt- Titanium substituted M ferrite, Sr- or BaFe 12-2 x Co x Ti x O 19 (CoTiM); Z-type ferrite (Ba 3 Me 2 Fe 24 O 41 ), such as Ba 3 Co 2 Fe 24 O 41 (Co 2 Z); Y-type ferrite (Ba 2 Me 2 Fe 12 O 22 ), such as Ba 2 Co 2 Fe 12 O 22 (Co 2 Y) or Mg 2 Y; W-type ferrite (BaMe 2 Fe 16 O 27 ), for example BaCo 2 Fe 16 O 27 (Co 2 W); X-type ferrite (Ba 2 Me 2 Fe 28 O 46 ), for example Ba 2 Co 2 Fe 28 O 46 (Co 2 X); And a U-type ferrite (Ba 4 Me 2 Fe 36 O 60 ), for example, Ba 4 Co 2 Fe 36 O 60 (Co 2 U), wherein in the above formula, Me is a +2 ion, and Ba may be substituted by Sr. The specific hexagonal ferrite further comprises Ba and Co, optionally with one or more other divalent cations (substituted or doped). The magnetic material may comprise ferromagnetic cobalt carbide (eg, Co 2 C and Co 3 C phases), for example, samarium cobalt Z-type hexagonal ferrite (Co 2 Z ferrite). The magnetic material may be present in the form of one or both of fibers and particles.

在一實施態樣中,且參照第4A圖中之細節1000,磁性加強層300係一纖維磁性層400。在此實施態樣中,複數根纖維係一磁性材料,例如如上文所述。該等纖維可包含鐵氧體纖維、鐵氧體合金纖維、鈷纖維、鈷合金纖維、鐵纖維、鐵合金纖維、鎳纖維、及鎳合金纖維。在一實施態樣中,該等纖維係六角鐵氧體纖維、磁鐵礦(Fe3O4)纖維、或MFe2O4纖維,其中M係Co、Ni、Zn、V、或Mn之至少一者,特別為Co、Ni、或Mn之至少一者。在本文所用磁性材料之任一者中,可存在順磁性元素(例如鉑、鋁、及氧)或一鑭系元素。 In one embodiment, and with reference to detail 1000 in FIG. 4A, the magnetic reinforcement layer 300 is a fiber magnetic layer 400. In this embodiment, the plurality of fibers are a magnetic material, such as described above. The fibers may include ferrite fibers, ferrite alloy fibers, cobalt fibers, cobalt alloy fibers, iron fibers, iron alloy fibers, nickel fibers, and nickel alloy fibers. In one embodiment, the fibers are hexagonal ferrite fibers, magnetite (Fe 3 O 4 ) fibers, or MFe 2 O 4 fibers, wherein the M system is at least Co, Ni, Zn, V, or Mn. In particular, at least one of Co, Ni, or Mn. In any of the magnetic materials used herein, a paramagnetic element (e.g., platinum, aluminum, and oxygen) or a lanthanide may be present.

該等纖維可為單根或個別纖維可經加撚(twisted)、擰成繩狀(roped)、針織(knit)、編成麻花狀(braided)等。該等纖維可具有在微米或奈米範圍中之直徑,例如2奈米(nm)至10微米、或2奈米至500奈米、或500奈米至5微米。在一實施態樣中,該等纖維具有就纖維長度而言50奈米至10微米、或50奈米至小於或等於900奈米、特別為20奈米至250奈米之平均纖維直徑。 The fibers may be twisted, twisted, knit, braided or the like. The fibers may have a diameter in the micrometer or nanometer range, such as from 2 nanometers (nm) to 10 micrometers, or from 2 nanometers to 500 nanometers, or from 500 nanometers to 5 micrometers. In one embodiment, the fibers have an average fiber diameter of from 50 nanometers to 10 micrometers, or from 50 nanometers to less than or equal to 900 nanometers, particularly from 20 nanometers to 250 nanometers, in terms of fiber length.

纖維磁性層400可呈一包含該等纖維之織物(cloth)形式。織物可為織造或非織造,例如一氈(felt)。織物可僅包括磁性纖維,或包括一磁性及非磁性纖維(例如,玻璃纖維、或聚合物系磁性纖維,如下所述)之組合,前提條件係該等磁性纖維係以有效提供期望性質之量存在。在特定實施態樣中,纖維磁性層400係一織物,例如鐵氧體或鐵氧體合金織物、鈷或鈷合金織物、鐵或鐵合金織物,或鎳或鎳合金織物。此熱穩定纖維強化物係減少該磁-介電基材在固化時基材平面內之收縮。此外,織物強化物之使用係使基材具有相對較高的機械強度。此等基材更易於藉由商業用途中之方法(例如,層壓,包括輥對輥(roll-to-roll)層壓)來處理。 The fibrous magnetic layer 400 can be in the form of a cloth containing the fibers. The fabric can be woven or non-woven, such as a felt. The fabric may comprise only magnetic fibers or a combination of magnetic and non-magnetic fibers (e.g., glass fibers, or polymeric magnetic fibers, as described below), provided that the magnetic fibers are effective to provide the desired properties. presence. In a particular embodiment, the fibrous magnetic layer 400 is a fabric such as a ferrite or ferrite alloy fabric, a cobalt or cobalt alloy fabric, an iron or iron alloy fabric, or a nickel or nickel alloy fabric. The thermally stable fiber reinforcement reduces shrinkage of the magnetic-dielectric substrate in the plane of the substrate upon curing. In addition, the use of fabric reinforcement results in a relatively high mechanical strength of the substrate. Such substrates are easier to handle by methods in commercial applications (e.g., lamination, including roll-to-roll lamination).

在一實施態樣中,且參照第4B圖中之細節1000,磁性層300係一具有磁性粒子分散於其中之聚合物(例如液晶聚合物、聚醚醯亞胺、聚醚酮、聚碸、聚醚碸、聚碳酸酯、聚酯等)。在此實施態樣中,磁性層可為一如上所述之織物,其包含具有磁性粒子502分散於其中之聚合物纖維或奈米纖維500、或一具有磁性奈米粒子512分散於其中之連續聚合物層510,例如如下文結合 第4D圖更詳細闡述。 In an embodiment, and referring to detail 1000 in FIG. 4B, the magnetic layer 300 is a polymer having magnetic particles dispersed therein (eg, liquid crystal polymer, polyether sulfimine, polyether ketone, polyfluorene, Polyether oxime, polycarbonate, polyester, etc.). In this embodiment, the magnetic layer may be a fabric as described above, comprising a polymer fiber or nanofiber 500 having magnetic particles 502 dispersed therein, or a continuous dispersion of magnetic nanoparticles 512 therein. Polymer layer 510, for example, as described below Figure 4D is explained in more detail.

上述磁性材料可為一磁性粒子之形式。磁性粒子可包含磁性奈米粒子及微米大小之粒子中之一或二者。磁性粒子之大小並無具體限制且可具有10奈米至10微米,特別為100奈米至5微米、更特別為1微米至5微米之D50值(以質量計)。磁性奈米粒子可具有1奈米至900奈米、特別為1奈米至100奈米、更特別為5奈米至10奈米之D50值(以質量計)。磁性微粒(micro-particle)可具有1微米至10微米、特別為2微米至5微米之D50值(以質量計)。磁性粒子可係不規則的或規則的,例如球形、卵形、多邊薄片形(polygonal flake)等。磁性粒子可包含鐵磁性粒子,例如鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或一包含上述磁性材料之至少一者之組合。在一特定實施態樣中,磁性粒子包含六角鐵氧體、磁鐵礦(Fe3O4)、及MFe2O4,其中M包含Co、Ni、Zn、V、及Mn之至少一者,特別為Co、Ni、及Mn。磁性粒子可經表面處理幫助分散於聚合物中,例如經一表面活性劑(例如油烯基胺油酸(oleylamine oleic acid)等)塗覆。磁性粒子可更塗覆有其他材料,例如氧化矽或銀。 The above magnetic material may be in the form of a magnetic particle. The magnetic particles may comprise one or both of magnetic nanoparticles and micron sized particles. The size of the magnetic particles is not particularly limited and may have a D 50 value (by mass) of from 10 nm to 10 μm, particularly from 100 nm to 5 μm, more particularly from 1 μm to 5 μm. The magnetic nanoparticles may have 1 nm to 900 nm, particularly 1 to 100 nm, more in particular 5 to 50 nm to 10 nm value of D (by mass). Magnetic particles (micro-particle) can have from 1 to 10 microns, particularly 2 microns to 5 microns D 50 values (by mass). The magnetic particles may be irregular or regular, such as spherical, oval, polygonal flake, and the like. The magnetic particles may comprise ferromagnetic particles such as ferrite, ferrite alloy, cobalt, cobalt alloy, iron, iron alloy, nickel, nickel alloy, or a combination comprising at least one of the foregoing magnetic materials. In a specific embodiment, the magnetic particles comprise hexagonal ferrite, magnetite (Fe 3 O 4 ), and MFe 2 O 4 , wherein M comprises at least one of Co, Ni, Zn, V, and Mn. Especially Co, Ni, and Mn. The magnetic particles may be surface treated to aid dispersion in the polymer, for example by a surfactant such as oleylamine oleic acid or the like. The magnetic particles may be more coated with other materials such as yttrium oxide or silver.

在另一實施態樣中,且參照第4C圖中之細節1000,磁性層300係由一第一磁性層610、一第二磁性層620、及一介電強化層(dielectric reinforcement layer)630構成,第二磁性層620例如與第一磁性層610均勻地間隔開,介電強化層630設置於第一磁性層610與第二磁性層620之間且與第一磁性層610及第二磁性層620緊密接觸。如本文所用,均勻地間隔開意指第一介電層與第二 介電層間之間距在整個基材中係恆定的,例如,各位置處之間距可在平均間距值之5%內、或在1%內變化。介電強化層630可為玻璃、玻璃纖維織物、加強聚合物層、經纖維加強之聚合物層、或具有適用於本文所揭示目的之結構完整性之任何其他介電層。在一實施態樣中,第一磁性層610及第二磁性層620中之每一者係由薄膜鐵氧體製得。 In another embodiment, and referring to the detail 1000 in FIG. 4C, the magnetic layer 300 is composed of a first magnetic layer 610, a second magnetic layer 620, and a dielectric reinforcement layer 630. The second magnetic layer 620 is, for example, evenly spaced apart from the first magnetic layer 610. The dielectric strengthening layer 630 is disposed between the first magnetic layer 610 and the second magnetic layer 620 and with the first magnetic layer 610 and the second magnetic layer. 620 is in close contact. As used herein, evenly spaced apart means the first dielectric layer and the second The distance between the dielectric layers is constant throughout the substrate, for example, the distance between the locations may vary within 5% of the average pitch value, or within 1%. The dielectric strengthening layer 630 can be a glass, fiberglass fabric, a reinforced polymer layer, a fiber reinforced polymer layer, or any other dielectric layer having structural integrity suitable for the purposes disclosed herein. In one embodiment, each of the first magnetic layer 610 and the second magnetic layer 620 is derived from a thin film ferrite.

在一實施態樣中,介電強化層630如第4C圖中所述係纖維,且第一磁性層610、一第二磁性層620係塗覆個別纖維或織物。纖維介電加強層可包含纖維之非織造物或織造物、熱穩定網,例如玻璃纖維(例如E、S、及D玻璃纖維)、高溫聚合物纖維(例如,聚醚醯亞胺、聚碸、聚醚酮、聚酯、或液晶聚合物纖維,例如自庫拉雷(Kuraray)購得之VECTRANTM)、或一包含上述之至少一者之組合。連續或纖維介電強化層630可藉由此項技術中已知之方法(例如化學氣相沉積、電子束沉積等)來塗覆。 In one embodiment, the dielectric strengthening layer 630 is a fiber as described in FIG. 4C, and the first magnetic layer 610 and the second magnetic layer 620 are coated with individual fibers or fabrics. The fiber dielectric reinforcing layer may comprise a nonwoven or woven fabric of fibers, a thermally stable web, such as glass fibers (eg, E, S, and D glass fibers), high temperature polymeric fibers (eg, polyether sulfimine, polyfluorene). Polyetherketone, polyester, or liquid crystal polymer fibers, such as VECTRAN (TM ) available from Kuraray, or a combination comprising at least one of the foregoing. The continuous or fiber dielectric strengthening layer 630 can be applied by methods known in the art (e.g., chemical vapor deposition, electron beam deposition, etc.).

在一實施態樣中,且參照第4D圖中之細節1000,第一介電層100係經設置與磁性層300之一側302直接接觸並在該側上形成一層102,且第二介電層200係經設置與磁性層300之對側304直接接觸並在該對側上形成一層202。層102、202可在以下情形中形成:磁性層300係自一固體、經固化、或不可浸漬之磁性材料製得,且第一介電層100及第二介電層200係自一可流動地分佈於磁性層300上(若係熱固性則在固化之前)、或鋪設於磁性層300上,且以化學方式、熱方式或機械方式結合至磁性層300(若係熱固性的則在完全固化之前、或固化之後)之可流動熱塑性或熱固 性聚合物製得。 In an embodiment, and referring to detail 1000 in FIG. 4D, the first dielectric layer 100 is disposed in direct contact with one side 302 of the magnetic layer 300 and forms a layer 102 on the side, and the second dielectric Layer 200 is disposed in direct contact with opposite side 304 of magnetic layer 300 and forms a layer 202 on the opposite side. The layers 102, 202 can be formed in the following cases: the magnetic layer 300 is made from a solid, cured, or non-impregnable magnetic material, and the first dielectric layer 100 and the second dielectric layer 200 are self-flowable Distributed on the magnetic layer 300 (before curing), or on the magnetic layer 300, and chemically, thermally or mechanically bonded to the magnetic layer 300 (if thermoset, before fully cured) Flowable thermoplastic or thermoset after curing Made from a polymer.

在一實施態樣中,且參照第4E圖中之細節1000,第一介電層100係對磁性層300之一側302部分浸漬(partially impregnate)104,且第二介電層200係對磁性層300之對側304部分浸漬204。此等部分浸漬104、204可在以下情形中形成:例如磁性層300係自一可浸漬材料(例如上述纖維磁性層400)製得,且第一介電層100及第二介電層200係自一可流動地分佈於磁性層300上(若係熱固性的,在固化之前)之可流動熱塑性或熱固性聚合物製得。 In one embodiment, and referring to detail 1000 in FIG. 4E, the first dielectric layer 100 is partially impregnate 104 to one side 302 of the magnetic layer 300, and the second dielectric layer 200 is magnetically paired. The opposite side 304 of layer 300 is partially impregnated 204. The partial impregnations 104, 204 can be formed in the following cases: for example, the magnetic layer 300 is made from an impregnable material (such as the fiber magnetic layer 400 described above), and the first dielectric layer 100 and the second dielectric layer 200 are Made from a flowable thermoplastic or thermoset polymer that is flowably distributed over the magnetic layer 300 (if thermoset, prior to curing).

現在參照第5圖,其繪示一磁-介電基材10之一部分,該磁-介電基材類似於第4C圖中所繪示者、但具有一導電接地層20設置於第一介電層100之一外表面106上、及一導電元件30設置於第二介電層200之一外表面206上,其中導電元件30係與導電接地層20間隔開。在一實施態樣中,導電接地層20及導電元件30係自一導電金屬(例如銅)製得,且磁-介電基材10、導電接地層20、及導電元件30可共同地製造成一積層板且稱為「銅包層電路積層板」50。在一實施態樣中,一信號線40(例如,其可為一同軸電纜、一饋電條帶、或一微條帶(micro-strip)之中央信號導體(central signal conductor))係經設置與導電元件30有信號通信。在一其中同軸電纜配有一圍繞中央信號線設置之接地鞘(ground sheath)之實施態樣中,該接地鞘係經設置與導電接地層20有電接地通信。 Referring now to FIG. 5, there is shown a portion of a magnetic-dielectric substrate 10 similar to that depicted in FIG. 4C but having a conductive ground layer 20 disposed on the first dielectric layer. An outer surface 106 of the electrical layer 100 and a conductive element 30 are disposed on an outer surface 206 of the second dielectric layer 200, wherein the conductive element 30 is spaced apart from the conductive ground layer 20. In one embodiment, the conductive ground layer 20 and the conductive element 30 are made from a conductive metal such as copper, and the magnetic-dielectric substrate 10, the conductive ground layer 20, and the conductive element 30 can be collectively fabricated into one. The laminate is also referred to as a "copper clad circuit laminate" 50. In one embodiment, a signal line 40 (eg, which may be a coaxial cable, a feed strip, or a micro-strip central signal conductor) is configured. Signal communication is with the conductive element 30. In an embodiment in which the coaxial cable is provided with a ground sheath disposed about a central signal line, the ground sheath is configured to have electrical ground communication with the conductive ground plane 20.

為提供具有某些且期望的電-磁性質之磁-介電基材 10、及銅包層電路積層板50,製作相對於彼此具有某些尺寸之銅包層積層板50之組件,其現將參照第5圖闡述,但亦可適用於本文所提供若干其他圖中所繪示之其他實施態樣。 To provide a magnetic-dielectric substrate having certain and desirable electro-magnetic properties 10. A copper clad circuit laminate 50, an assembly of copper clad laminates 50 having certain dimensions relative to each other, which will now be described with reference to Figure 5, but may also be suitable for use in several other figures provided herein. Other embodiments shown.

在一實施態樣中,第一介電層100具有第一厚度108,且第二介電層200具有厚度實質上等於第一厚度108之第二厚度208。藉由形成帶有具有實質上相等厚度之第一介電層100及第二介電層200之磁-介電基材10,磁性層300將設置於積層板之中心內,且利用此一磁-介電基材10製得之一銅包層積層板50將聚集一所得磁場平面,該磁場平面係源自在磁-介電基材10之中心區中在貼片30與接地平面20之間所建立之電場(下文進一步闡述),已發現此產生優於先前技術裝置的改良信號帶寬(下文進一步闡述)。然而,儘管由於中心位置將具有最高濃度之貼片天線磁場,故磁性層300、610、620較佳可在磁-介電基材10之中心位置,但應瞭解該等層可以適用於本文所揭示目的之方式置於貼片內部之任何位置處。而且,一實施態樣可包括其中該等磁性層經設計以具有嚴格地遵循磁場圖案結構之一結構的配置,其中該等磁性層中之不連續性將用於抑制天線設計中之傳播模式(propagating mode)。 In one embodiment, the first dielectric layer 100 has a first thickness 108 and the second dielectric layer 200 has a second thickness 208 that is substantially equal in thickness to the first thickness 108. By forming a magnetic-dielectric substrate 10 having a first dielectric layer 100 and a second dielectric layer 200 having substantially equal thicknesses, the magnetic layer 300 will be disposed in the center of the laminate and utilize this magnetic - A dielectric cladding substrate 50 produced by the dielectric substrate 10 will collect a resulting magnetic field plane originating from the patch 30 and the ground plane 20 in the central region of the magnetic-dielectric substrate 10. The established electric field (described further below) has been found to produce improved signal bandwidths (described further below) that are superior to prior art devices. However, although the magnetic layer 300, 610, 620 is preferably at the center of the magnetic-dielectric substrate 10, since the center position will have the highest concentration of the patch antenna magnetic field, it should be understood that the layers can be applied to this document. The way to reveal the purpose is to place it anywhere inside the patch. Moreover, an embodiment may include a configuration in which the magnetic layers are designed to have a structure that strictly follows one of the magnetic field pattern structures, wherein discontinuities in the magnetic layers will be used to suppress propagation modes in the antenna design ( Propagating mode).

在一實施態樣中,第一磁性層610具有第一磁性層厚度612,第二磁性層620具有第二磁性層厚度622,且介電強化層630具有強化層厚度632。在一實施態樣中,強化層厚度632對第一磁性層厚度612之比率係等於或大於25,且強化層厚度632對第二磁性層厚度622之比率係等於或大於25。 In one embodiment, the first magnetic layer 610 has a first magnetic layer thickness 612, the second magnetic layer 620 has a second magnetic layer thickness 622, and the dielectric strengthening layer 630 has a reinforcing layer thickness 632. In one embodiment, the ratio of the enhancement layer thickness 632 to the first magnetic layer thickness 612 is equal to or greater than 25, and the ratio of the reinforcement layer thickness 632 to the second magnetic layer thickness 622 is equal to or greater than 25.

儘管在本文中參照可為一單一磁性層、或由一第一 磁性層610及一第二磁性層620構成之一磁性層300,但應瞭解,形成磁性層300之層的數量並不限於僅一或二個層,而是可為適用於本文所揭示目的之任何數量層。 Although reference may be made herein to a single magnetic layer, or by a first The magnetic layer 610 and the second magnetic layer 620 constitute one magnetic layer 300, but it should be understood that the number of layers forming the magnetic layer 300 is not limited to only one or two layers, but may be suitable for the purposes disclosed herein. Any number of layers.

遵從上述比率之上述厚度之實例厚度為:第一介電層100之第一厚度108為0.25毫米;第二介電層200之第二厚度208為0.25毫米;介電強化層630之強化層厚度632為0.25毫米;第一磁性層610之第一磁性層厚度612為10微米;以及,第二磁性層620之第二磁性層厚度622為10微米。 An example thickness of the above thickness in accordance with the above ratio is: a first thickness 108 of the first dielectric layer 100 is 0.25 mm; a second thickness 208 of the second dielectric layer 200 is 0.25 mm; a thickness of the dielectric layer of the dielectric strengthening layer 630 632 is 0.25 mm; the first magnetic layer 610 has a first magnetic layer thickness 612 of 10 microns; and the second magnetic layer 620 has a second magnetic layer thickness 622 of 10 microns.

在一實施態樣中,導電元件30具有40微米之厚度34。 In one embodiment, the conductive element 30 has a thickness 34 of 40 microns.

現在參照第5圖、第6A圖、第6B圖及第6C圖,其描繪用於作為一天線60之本文所述銅包層積層板50(磁-介電基材10、導電接地層20、及導電元件30)之各個視圖。在一實施態樣中,第一介電層100具有界定一第一覆蓋區(footprint)的外部尺寸(outer dimension)(例如,68毫米×88毫米),第二介電層200具有界定一大小實質上等於第一覆蓋區之第二覆蓋區的外部尺寸(例如,68毫米×88毫米),磁性層300具有界定一大小實質上等於第一覆蓋區及第二覆蓋區之第三覆蓋區的外部尺寸(例如,68毫米×88毫米),導電接地層20具有界定一大小實質上等於第一覆蓋區之第四覆蓋區的外部尺寸(例如,68毫米×88毫米),且導電元件30具有界定一大小小於第二覆蓋區之第五覆蓋區的外部尺寸(例如,34毫米×44毫米)。在一實施態樣中,且參照以上所提及覆蓋區尺寸,第五覆蓋區(導電元件30)之面積對第二覆蓋區(第二介電層200)之面積的比率係等於或小於0.3,且在另一實施態樣 中係等於或小於0.25。在一實施態樣中,導電元件30之第五覆蓋區係設置於第二介電層200之第二覆蓋區的中心上。 Referring now to Figures 5, 6A, 6B and 6C, a copper clad laminate 50 (magnetic-dielectric substrate 10, conductive ground layer 20, for use as an antenna 60) is depicted. And various views of the conductive element 30). In one embodiment, the first dielectric layer 100 has an outer dimension (eg, 68 mm x 88 mm) defining a first footprint, and the second dielectric layer 200 has a defined size. Substantially equal to the outer dimension of the second footprint of the first footprint (eg, 68 mm x 88 mm), the magnetic layer 300 has a third footprint defining a third footprint substantially equal to the first footprint and the second footprint The outer dimension (e.g., 68 mm x 88 mm), the conductive ground layer 20 has an outer dimension (e.g., 68 mm x 88 mm) defining a fourth footprint substantially equal to the first footprint, and the conductive element 30 has An outer dimension (e.g., 34 mm x 44 mm) defining a fifth footprint that is smaller than the second footprint is defined. In an embodiment, and referring to the coverage area mentioned above, the ratio of the area of the fifth coverage area (conductive element 30) to the area of the second coverage area (second dielectric layer 200) is equal to or less than 0.3. And in another embodiment The middle is equal to or less than 0.25. In one embodiment, the fifth footprint of the conductive element 30 is disposed on the center of the second footprint of the second dielectric layer 200.

在一實施態樣中,銅包層積層板50之導電元件30係經圖案化(參見例如第3圖)以產生用作一天線之期望形狀。 In one embodiment, the conductive elements 30 of the copper clad laminate 50 are patterned (see, for example, Figure 3) to produce the desired shape for use as an antenna.

用於介電層中之介電材料係經選擇以提供期望的電及機械性質,且通常包含一熱塑性或熱固性聚合物基質及一介電填料。基於介電層之體積,介電層可包含30體積%至99體積%(vol%)之聚合物基質、及0體積%至70體積%、特別為1體積%至70體積%、更特別為5體積%至50體積%之填料。聚合物及填料係經選擇以提供一具有以下性質之介電層:在10吉赫(GHz)下介電常數小於3.5且損耗因子(dissipation factor)小於0.006、特別為小於或等於0.0035。損耗因子可藉由IPC-TM-650 X-頻段帶線(X-band strip line)方法或藉由狹縫諧振器方法(Split Resonator method)來量測。 The dielectric materials used in the dielectric layer are selected to provide the desired electrical and mechanical properties, and typically comprise a thermoplastic or thermoset polymer matrix and a dielectric filler. The dielectric layer may comprise from 30% to 99% by volume (vol%) of polymer matrix, and from 0% to 70% by volume, in particular from 1% to 70% by volume, more particularly 5 vol% to 50 vol% filler. The polymer and filler are selected to provide a dielectric layer having a dielectric constant of less than 3.5 at 10 GHz and a dissipation factor of less than 0.006, particularly less than or equal to 0.0035. The loss factor can be measured by the IPC-TM-650 X-band strip line method or by the Split Resonator method.

介電層係包含一低極性、低介電常數、及低損失的聚合物,其可為熱固性或熱塑性的。聚合物可包含1,2-聚丁二烯(1,2-polybutadiene,PBD)、聚異戊二烯(polyisoprene)、聚丁二烯-聚異戊二烯共聚物、聚醚醯亞胺(polyetherimide,PEI)、含氟聚合物(fluoropolymer)例如聚四氟乙烯(polytetrafluoroethylene,PTFE)、聚醯亞胺、聚醚醚酮(polyetheretherketone,PEEK)、聚醯胺醯亞胺、聚對酞酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二酯(polyethylene naphthalate)、聚對酞酸環己二酯(polycyclohexylene terephthalate)、聚苯醚(polyphenylene ether)、彼等基於烯丙基化聚苯醚(allylated polyphenylene ether)者、或一包含上述之至少一者之組合。亦可使用低極性與較高極性之組合,非限制性實例包括環氧與聚(苯醚)、環氧與聚(醚醯亞胺)、氰酸酯與聚(苯醚)、及1,2-聚丁二烯與聚乙烯。 The dielectric layer comprises a low polarity, low dielectric constant, and low loss polymer which may be thermoset or thermoplastic. The polymer may comprise 1,2-polybutadiene (PBD), polyisoprene, polybutadiene-polyisoprene copolymer, polyetherimine ( Polyetherimide, PEI), fluoropolymers such as polytetrafluoroethylene (PTFE), polyamidene, polyetheretherketone (PEEK), polyamidoximine, poly(p-butyric acid) Polyethylene terephthalate (PET), polyethylene naphthalate, polycyclohexylene terephthalate, polyphenylene Ether), those based on allylated polyphenylene ether, or a combination comprising at least one of the foregoing. Combinations of low polarity and higher polarity may also be used, non-limiting examples including epoxy and poly(phenylene ether), epoxy and poly(etherimine), cyanate and poly(phenylene ether), and 1, 2-polybutadiene and polyethylene.

含氟聚合物包括氟化均聚物(fluorinated homopolymer)(例如,PTFE及聚氯三氟乙烯(polychlorotrifluoroethylene,PCTFE))、及氟化共聚物(例如四氯乙烯或氯三氟乙烯與單體(例如六氟丙烯及全氟烷基乙烯基醚(perfluoroalkylvinylethers)、二氟亞乙烯(vinylidene fluoride)、氟乙烯、乙烯)之共聚物)、或一包含上述之至少一者之組合。含氟聚合物可包含該等含氟聚合物中之不同的至少一者之組合。 Fluoropolymers include fluorinated homopolymers (eg, PTFE and polychlorotrifluoroethylene (PCTFE)), and fluorinated copolymers (eg, tetrachloroethylene or chlorotrifluoroethylene and monomers ( For example, a copolymer of hexafluoropropylene and perfluoroalkylvinylethers, vinylidene fluoride, vinyl fluoride, ethylene, or a combination comprising at least one of the foregoing. The fluoropolymer may comprise a combination of at least one of the different fluoropolymers.

聚合物基質可包含熱固性聚丁二烯及/或聚異戊二烯。如本文所用,術語「熱固性聚丁二烯及/或聚異戊二烯」包括包含衍生自丁二烯、異戊二烯、或其混合物之單元的均聚物及共聚物。聚合物中亦可存在衍生自其他可共聚單體之單元,例如,以接枝之形式。例示性可共聚單體包括(但不限於)乙烯基芳族單體(vinylaromatic monomer),例如經取代及未經取代之單乙烯基芳族單體,例如苯乙烯、3-甲基苯乙烯、3,5-二乙基苯乙烯、4-正丙基苯乙烯、α-甲基苯乙烯、α-甲基乙烯基甲苯、對-羥基苯乙烯、對-甲氧基苯乙烯、α-氯苯乙烯、α-溴苯乙烯、二氯苯乙烯、二溴苯乙烯、四氯苯乙烯等;以及經取代及未經取代之二乙烯基芳族單體,例如二乙烯基苯、二乙烯基甲苯等。亦可使用包含前述可共聚單體之至少一者之組合。例示性熱固性聚丁二烯及/或 聚異戊二烯包括(但不限於)丁二烯均聚物、異戊二烯均聚物、丁二烯-乙烯基芳族共聚物(例如丁二烯-苯乙烯)、異戊二烯-乙烯基芳族共聚物(例如異戊二烯-苯乙烯共聚物)等。 The polymer matrix can comprise thermoset polybutadiene and/or polyisoprene. As used herein, the term "thermosetting polybutadiene and/or polyisoprene" includes homopolymers and copolymers comprising units derived from butadiene, isoprene, or mixtures thereof. Units derived from other copolymerizable monomers may also be present in the polymer, for example, in the form of a graft. Exemplary copolymerizable monomers include, but are not limited to, vinylaromatic monomers such as substituted and unsubstituted monovinyl aromatic monomers such as styrene, 3-methylstyrene, 3,5-diethylstyrene, 4-n-propylstyrene, α-methylstyrene, α-methylvinyltoluene, p-hydroxystyrene, p-methoxystyrene, α-chloride Styrene, α-bromostyrene, dichlorostyrene, dibromostyrene, tetrachlorostyrene, etc.; and substituted and unsubstituted divinyl aromatic monomers, such as divinylbenzene, divinyl Toluene, etc. Combinations comprising at least one of the foregoing copolymerizable monomers can also be used. Exemplary thermoset polybutadiene and/or Polyisoprene includes, but is not limited to, butadiene homopolymer, isoprene homopolymer, butadiene-vinyl aromatic copolymer (eg, butadiene-styrene), isoprene a vinyl aromatic copolymer (for example, an isoprene-styrene copolymer) or the like.

熱固性聚丁二烯及/或聚異戊二烯亦可經修飾。舉例而言,聚合物可經羥基封端(hydroxyl-terminated)、經甲基丙烯酸酯封端、經羧酸酯封端等。亦可使用後反應聚合物,例如丁二烯或異戊二烯聚合物之經環氧、馬來酸酐、或胺甲酸乙酯(urethane)修飾之聚合物。聚合物亦可(例如)藉由二乙烯基芳族化合物(例如二乙烯基苯)交聯,例如,與二乙烯基苯交聯之聚丁二烯-苯乙烯。例示性聚合物係由其製造商寬泛地歸類為「聚丁二烯」,例如,日本曹達(Nippon Soda)公司(東京,日本)及克雷威利烴特種化學品(Cray Valley Hydrocarbon Specialty Chemicals)(埃克斯頓,賓夕法尼亞州)。亦可使用聚合物之混合物,例如,聚丁二烯均聚物與聚(丁二烯-異戊二烯)共聚物之混合物。亦可使用包含間規(syndiotactic)聚丁二烯之組合。 Thermosetting polybutadiene and/or polyisoprene may also be modified. For example, the polymer can be hydroxyl-terminated, terminated with methacrylate, terminated with a carboxylic acid ester, and the like. Post-reactive polymers such as epoxy, maleic anhydride, or urethane modified polymers of butadiene or isoprene polymers can also be used. The polymer may also be crosslinked, for example, by a divinyl aromatic compound such as divinylbenzene, for example, polybutadiene-styrene crosslinked with divinylbenzene. Exemplary polymers are broadly classified by their manufacturers as "polybutadiene", for example, Nippon Soda Corporation (Tokyo, Japan) and Cray Valley Hydrocarbon Specialty Chemicals. ) (Exton, PA). Mixtures of polymers can also be used, for example, a mixture of a polybutadiene homopolymer and a poly(butadiene-isoprene) copolymer. Combinations comprising syndiotactic polybutadiene can also be used.

熱固性聚丁二烯及/或聚異戊二烯在室溫下可為液體或固體。液體聚合物可具有大於或等於5,000公克/莫耳(g/mol)之數量平均分子量(Mn)。液體聚合物可具有小於5,000公克/莫耳、特別為1,000公克/莫耳至3,000公克/莫耳之Mn。具有至少90重量%1,2加成(1,2 addition)之熱固性聚丁二烯及/或聚異戊二烯由於有大量可用於交聯之懸垂(pendent)乙烯基而在固化時可展現較大交聯密度。 The thermosetting polybutadiene and/or polyisoprene may be liquid or solid at room temperature. The liquid polymer can have a number average molecular weight (Mn) greater than or equal to 5,000 grams per mole (g/mol). The liquid polymer can have an Mn of less than 5,000 grams per mole, particularly from 1,000 grams per mole to 3,000 grams per mole. Thermosetting polybutadiene and/or polyisoprene having at least 90% by weight of 1,2 addition can exhibit upon curing due to a large amount of pendent vinyl which can be used for crosslinking Larger crosslink density.

基於總聚合物基質組合物,聚丁二烯及/或聚異戊 二烯可相對於總聚合物基質組合物以高達100重量%、特別為高達75重量%之量存在於聚合物組合物中、更特別為10重量%至70重量%、甚至更特別為20重量%至60重量%或70重量%。 Based on total polymer matrix composition, polybutadiene and/or polyisoprene The diene may be present in the polymer composition in an amount of up to 100% by weight, in particular up to 75% by weight, relative to the total polymer matrix composition, more particularly from 10% to 70% by weight, even more particularly 20% by weight % to 60% by weight or 70% by weight.

可添加可與熱固性聚丁二烯及/或聚異戊二烯共固化之其他聚合物來用於特定性質或加工改性。舉例而言,為改良介電基材材料之介電強度及機械性質隨時間之穩定性,在系統中可使用較低分子量之乙烯-丙烯彈性體。本文所用之乙烯-丙烯彈性體係為主要包含乙烯及丙烯之共聚物、三元共聚物、或其他聚合物。乙烯-丙烯彈性體可進一步歸類為EPM共聚物(亦即,乙烯及丙烯單體之共聚物)或EPDM三元共聚物(亦即,乙烯、丙烯、及二烯單體之三元共聚物)。具體而言,乙烯-丙烯-二烯三元共聚物橡膠具有飽和主鏈,帶有在主鏈外可用於簡易交聯的不飽和。可使用其中二烯為二環戊二烯之液體乙烯-丙烯-二烯三元共聚物橡膠。 Other polymers that can be co-cured with thermoset polybutadiene and/or polyisoprene can be added for specific properties or process modifications. For example, to improve the dielectric strength and mechanical properties of dielectric substrate materials over time, lower molecular weight ethylene-propylene elastomers can be used in the system. The ethylene-propylene elastomer system used herein is a copolymer, terpolymer, or other polymer mainly comprising ethylene and propylene. The ethylene-propylene elastomer can be further classified as an EPM copolymer (i.e., a copolymer of ethylene and a propylene monomer) or an EPDM terpolymer (i.e., a terpolymer of an ethylene, propylene, and diene monomer). ). Specifically, the ethylene-propylene-diene terpolymer rubber has a saturated main chain with an unsaturation which can be used for simple crosslinking outside the main chain. A liquid ethylene-propylene-diene terpolymer rubber in which the diene is dicyclopentadiene can be used.

乙烯-丙烯橡膠之分子量可小於10,000公克/莫耳黏度平均分子量(viscosity average molecular weight,Mv)。乙烯-丙烯橡膠可包括Mv為7,200公克/莫耳之乙烯-丙烯橡膠,其係自路易斯安那州巴頓魯治的獅子共聚物(Lion Copolymer,Baton Rouge,LA)以商品名TRILENETM CP80購得;Mv為7,000公克/莫耳之液體乙烯-丙烯-二環戊二烯三元共聚物橡膠,其係自Lion Copolymer以商品名TRILENETM 65購得;以及Mv為7,500公克/莫耳之液體乙烯-丙烯-亞乙基降莰烯(ethylidene norbornene)三元共聚物,其係自Lion Copolymer以商品名TRILENETM 67購得。 The ethylene-propylene rubber may have a molecular weight of less than 10,000 g/viscosity average molecular weight (Mv). Ethylene - propylene rubber may comprise Mv of 7,200 g / mole of ethylene - propylene rubber, which is based from the Baton Rouge, Louisiana Lion copolymer (Lion Copolymer, Baton Rouge, LA ) under the trade name TRILENE TM CP80 available; Mv of 7,000 g / mole of the liquid ethylene - propylene - dicyclopentadiene terpolymer rubber, which is based tradename from Lion copolymer TRILENE TM 65 is commercially available; Mv and 7,500 g / mole of the liquid ethylene - propylene - ethylidene norbornene (ethylidene norbornene) terpolymer based tradename from Lion copolymer TRILENE TM 67 is commercially available.

乙烯-丙烯橡膠可以有效維持基材材料隨時間之穩定性、尤其介電強度及機械性質之量存在。通常,此等量係相對於聚合物基質組合物之總重量為高達20重量%、特別為4重量%至20重量%、更特別為6重量%至12重量%。 Ethylene-propylene rubber can effectively maintain the stability of the substrate material over time, especially the dielectric strength and mechanical properties. Typically, such amounts are up to 20% by weight, particularly from 4% to 20% by weight, more particularly from 6% to 12% by weight, relative to the total weight of the polymer matrix composition.

另一類型之可共固化聚合物係含有不飽和聚丁二烯之彈性體或含有不飽和聚異戊二烯之彈性體。此組分可為主要1,3-加成丁二烯或異戊二烯與一烯系不飽和單體(例如,乙烯基芳族化合物,例如苯乙烯或α-甲基苯乙烯;丙烯酸酯或甲基丙烯酸酯,例如甲基丙烯酸甲酯;或丙烯腈)之一隨機或嵌段(block)共聚物。彈性體可為一包含一線性或接枝型(graft-type)嵌段共聚物之固體、熱塑性彈性體,共聚物具有一聚丁二烯或聚異戊二烯嵌段及一可衍生自一單乙烯基芳族單體(例如苯乙烯或α-甲基苯乙烯)之熱塑性嵌段。此類型之嵌段共聚物包括苯乙烯-丁二烯-苯乙烯三嵌段共聚物,例如,彼等自德克薩斯州休士頓的戴克斯克聚合物(Dexco Polymers,Houston,TX)以商品名VECTOR 8508MTM購得者、自德克薩斯州休士頓的埃尼化工彈性體美洲(Enichem Elastomers America,Houston,TX)以商品名SOL-T-6302TM購得者、及彼等自戴納索彈性體(Dynasol Elastomers)以商品名CALPRENETM 401購得者;以及苯乙烯-丁二烯二嵌段共聚物及含有苯乙烯及丁二烯之混合三嵌段與二嵌段共聚物,例如,彼等自科騰聚合物(Kraton Polymers)(德克薩斯州休士頓(Houston,TX))以商品名KRATON D1118購得者。KRATON D1118係含有33重量%苯乙烯之含混合二嵌段/三嵌段苯乙烯與丁二烯之共聚物。 Another type of co-curable polymer is an elastomer containing unsaturated polybutadiene or an elastomer containing unsaturated polyisoprene. This component may be a primary 1,3-addition butadiene or isoprene with an ethylenically unsaturated monomer (eg, a vinyl aromatic compound such as styrene or alpha-methyl styrene; acrylate) Or a random or block copolymer of a methacrylate such as methyl methacrylate; or acrylonitrile. The elastomer may be a solid, thermoplastic elastomer comprising a linear or graft-type block copolymer having a polybutadiene or polyisoprene block and one derived from A thermoplastic block of a monovinyl aromatic monomer such as styrene or alpha-methylstyrene. Block copolymers of this type include styrene-butadiene-styrene triblock copolymers, for example, they are manufactured by Dexco Polymers, Houston, TX. under the trade name VECTOR 8508M TM are available, from Houston, Texas Eni chemical elastomer America (Enichem elastomers America, Houston, TX ) is commercially available under the trade name SOL-T-6302 TM's, getting from here from Dai Nasuo other elastomer (Dynasol elastomers) tradename available by CALPRENE TM 401; and styrene - butadiene diblock copolymer mixture containing styrene and butadiene, and the diblock and triblock Copolymers, for example, are commercially available from Kraton Polymers (Houston, TX) under the tradename KRATON D1118. KRATON D1118 is a copolymer containing mixed diblock/triblock styrene and butadiene containing 33% by weight of styrene.

視需要之含聚丁二烯之彈性體或含聚異戊二烯之彈性體可更包含一類似於上述之第二嵌段共聚物,惟聚丁二烯或聚異戊二烯嵌段係經氫化,由此形成一聚乙烯嵌段(在聚丁二烯之情形中)或乙烯-丙烯共聚物嵌段(在聚異戊二烯之情形中)。當與上述共聚物結合使用時,可產生具有更高韌性之材料。此類型之一例示性第二嵌段共聚物係KRATON GX1855(自Kraton Polymers購得),據信其係苯乙烯-高1,2-丁二烯-苯乙烯嵌段共聚物及苯乙烯-(乙烯-丙烯)-苯乙烯嵌段共聚物之混合物。 The polybutadiene-containing elastomer or the polyisoprene-containing elastomer may further comprise a second block copolymer similar to the above, but a polybutadiene or polyisoprene block system. By hydrogenation, a polyethylene block (in the case of polybutadiene) or an ethylene-propylene copolymer block (in the case of polyisoprene) is formed. When used in combination with the above copolymers, a material having higher toughness can be produced. An exemplary second block copolymer of this type is KRATON GX1855 (available from Kraton Polymers), which is believed to be a styrene-high 1,2-butadiene-styrene block copolymer and styrene-( A mixture of ethylene-propylene)-styrene block copolymers.

含有不飽和聚丁二烯之彈性體或含有不飽和聚異戊二烯之彈性體組分可相對於聚合物基質組合物之總重量以2重量%至60重量%、特別為5重量%至50重量%、更特別為10重量%至40重量%或50重量%之量存在於聚合物基質組合物中。 The elastomer containing unsaturated polybutadiene or the elastomer component containing unsaturated polyisoprene may be from 2% by weight to 60% by weight, particularly 5% by weight, based on the total weight of the polymer matrix composition. An amount of 50% by weight, more specifically 10% by weight to 40% by weight or 50% by weight, is present in the polymer matrix composition.

可添加用於特定性質及加工改性之更其他的可共固化聚合物包括(但不限於)乙烯之均聚物或共聚物,例如聚乙烯及環氧乙烷(ethylene oxide)共聚物;天然橡膠;降莰烯聚合物,例如聚二環戊二烯;氫化苯乙烯-異戊二烯-苯乙烯共聚物及丁二烯-丙烯腈共聚物;不飽和聚酯等。此等共聚物之含量通常小於聚合物基質組合物中總聚合物之50重量%。 Other co-curable polymers that may be added for specific properties and processing modifications include, but are not limited to, homopolymers or copolymers of ethylene, such as polyethylene and ethylene oxide copolymers; Rubber; norbornene polymer, such as polydicyclopentadiene; hydrogenated styrene-isoprene-styrene copolymer and butadiene-acrylonitrile copolymer; unsaturated polyester. The amount of such copolymers is typically less than 50% by weight of the total polymer in the polymer matrix composition.

亦可添加自由基可固化單體用於特定性質及加工改性,例如以增加系統固化後之交聯密度。可為適宜交聯劑之例示性單體包括(例如)二、三、或更高烯系不飽和單體,例如二乙烯基苯、三聚氰酸三烯丙酯、酞酸二烯丙酯、及多官能丙烯酸酯單體(例如,自賓夕法尼亞州新城廣場的沙多瑪美國(Sartomer USA,Newtown Square,PA)購得之SARTOMERTM聚合物)、或其組合,這些均係市售可得。基於聚合物基質組合物中總聚合物之總重量,交聯劑在使用時可以至多20重量%、特別為1重量%至15重量%之量存在於聚合物基質組合物中。 Free radical curable monomers can also be added for specific properties and processing modifications, for example to increase the crosslink density after curing of the system. Exemplary monomers which may be suitable crosslinking agents include, for example, di-, tri- or higher ethylenically unsaturated monomers such as divinylbenzene, triallyl cyanurate, diallyl phthalate and multifunctional acrylate monomers (e.g., available from SARTOMER TM polymer of Newtown Square, Pennsylvania, United states of沙多瑪(Sartomer USA, Newtown Square, PA )), or combinations thereof, which are commercially available system . The crosslinking agent may be present in the polymer matrix composition in an amount of up to 20% by weight, particularly from 1% to 15% by weight, based on the total weight of the total polymer in the polymer matrix composition.

可將一固化劑添加至聚合物基質組合物以加速具有烯反應位點(olefinic reactive site)之多烯的固化反應。固化劑可包含有機過氧化物,例如,過氧化二異丙苯(dicumyl peroxide)、過苯甲酸三級丁酯(t-butyl perbenzoate)、2,5-二甲基-2,5-二(三級丁基過氧基)己烷、α,α-二-雙(三級丁基過氧基)二異丙苯(α,α-di-bis(t-butyl peroxy)diisopropylbenzene)、2,5-二甲基-2,5-二(三級丁基過氧基)己炔-3、或一包含上述之至少一者之組合。可使用碳-碳起始劑,例如,2,3-二甲基-2,3-二苯基丁烷。固化劑或起始劑可單獨或組合使用。固化劑之量基於聚合物基質組合物中聚合物之總重量可為1.5重量%至10重量%。 A curing agent can be added to the polymer matrix composition to accelerate the curing reaction of the polyene having an olefinic reactive site. The curing agent may comprise an organic peroxide, for example, dicumyl peroxide, t-butyl perbenzoate, 2,5-dimethyl-2,5-di ( Tertiary butylperoxy)hexane, α,α-di-bis(t-butyl peroxy)diisopropylbenzene, 2, 5-dimethyl-2,5-di(tertiarybutylperoxy)hexyne-3, or a combination comprising at least one of the foregoing. A carbon-carbon initiator can be used, for example, 2,3-dimethyl-2,3-diphenylbutane. The curing agent or initiator may be used singly or in combination. The amount of curing agent may range from 1.5% to 10% by weight, based on the total weight of the polymer in the polymer matrix composition.

在一些實施態樣中,聚丁二烯或聚異戊二烯聚合物係經羧基官能化。官能化可使用分子中具有以下二者之多官能化合物來實現:(i)碳-碳雙鍵或碳-碳三鍵、及(ii)羧基(包括羧酸、酸酐、醯胺、酯、或醯鹵(acid halide))之至少一者。特定羧基係羧酸或酯。可提供羧酸官能基之多官能化合物之實例包括馬來酸、馬來酸酐、延胡索酸(fumaric acid)、及檸檬酸。具體而言,聚丁二烯與馬來酸酐之加合物可用於熱固性組合物中。適宜的馬來酸酐化(maleinized)聚丁二烯聚合物係自(例如)Cray Valley以商品名RICON 130MA8、RICON 130MA13、RICON 130MA20、 RICON 131MA5、RICON 131MA10、RICON 131MA17、RICON 131MA20、及RICON 156MA17購得。適宜的馬來酸酐化聚丁二烯-苯乙烯共聚物係自(例如)Sartomer以商品名RICON 184MA6購得。RICON 184MA6係具有苯乙烯含量為17重量%至27重量%且Mn為9,900公克/莫耳之丁二烯-苯乙烯共聚物與馬來酸酐之加合物。 In some embodiments, the polybutadiene or polyisoprene polymer is functionalized with a carboxyl group. Functionalization can be achieved using polyfunctional compounds having two in the molecule: (i) a carbon-carbon double bond or a carbon-carbon triple bond, and (ii) a carboxyl group (including a carboxylic acid, anhydride, guanamine, ester, or At least one of acid halides. A specific carboxy carboxylic acid or ester. Examples of polyfunctional compounds which may provide a carboxylic acid functional group include maleic acid, maleic anhydride, fumaric acid, and citric acid. In particular, adducts of polybutadiene and maleic anhydride can be used in the thermosetting composition. Suitable maleated polybutadiene polymers are, for example, from Cray Valley under the tradenames RICON 130MA8, RICON 130MA13, RICON 130MA20, RICON 131MA5, RICON 131MA10, RICON 131MA17, RICON 131MA20, and RICON 156MA17 were purchased. Suitable maleated polybutadiene-styrene copolymers are commercially available, for example, from Sartomer under the tradename RICON 184MA6. RICON 184MA6 is an adduct of butadiene-styrene copolymer with maleic anhydride having a styrene content of 17% to 27% by weight and an Mn of 9,900 g/mole.

聚合物基質組合物中之各種聚合物(例如,聚丁二烯或聚異戊二烯聚合物及其他聚合物)之相對量可取決於所使用之特定導電金屬層、電路材料及銅包層積層板之期望性質、及類似考量。舉例而言,聚(伸芳基醚)之使用可為導電金屬層(例如,銅)提供增加之結合強度(bond strength)。聚丁二烯或聚異戊二烯聚合物之使用可增加積層板之耐高溫性,例如,當此等聚合物經羧基官能化時。彈性體嵌段共聚物之使用可用於使聚合物基質材料之組分相容。各組分之適當量之確定無需過多試驗即可實施,此取決於一具體應用之期望性質。 The relative amounts of the various polymers (e.g., polybutadiene or polyisoprene polymers and other polymers) in the polymer matrix composition may depend on the particular conductive metal layer, circuit material, and copper cladding used. The expected properties of laminates, and similar considerations. For example, the use of poly(strandyl ether) can provide increased bond strength to a conductive metal layer (eg, copper). The use of polybutadiene or polyisoprene polymers can increase the high temperature resistance of laminates, for example, when such polymers are functionalized with carboxyl groups. The use of an elastomeric block copolymer can be used to make the components of the polymeric matrix material compatible. The determination of the appropriate amount of each component can be carried out without undue experimentation, depending on the desired properties of a particular application.

至少一介電層可更包括一顆粒介電填料,其經選擇以調整介電層之介電常數、損耗因子、熱膨脹係數、及其他性質。介電填料可包含(例如)二氧化鈦(金紅石及銳鈦礦)、鈦酸鋇、鈦酸鍶、氧化矽(包括熔融非晶形氧化矽)、金剛砂、矽灰石、Ba2Ti9O20、固體玻璃球體、合成玻璃或陶瓷空心球體、石英、氮化硼、氮化鋁、碳化矽、氧化鈹、氧化鋁、氧化鋁三水合物、氧化鎂、雲母、滑石、奈米黏土(nanoclay)、氫氧化鎂、或一包含上述之至少一者之組合。可使用單一次要填料、或次要填料之組合以提供一性質之期望平衡。 The at least one dielectric layer can further comprise a particulate dielectric filler selected to adjust the dielectric constant, loss factor, coefficient of thermal expansion, and other properties of the dielectric layer. The dielectric filler may comprise, for example, titanium dioxide (rutile and anatase), barium titanate, barium titanate, cerium oxide (including molten amorphous cerium oxide), silicon carbide, apatite, Ba 2 Ti 9 O 20 , Solid glass spheres, synthetic glass or ceramic hollow spheres, quartz, boron nitride, aluminum nitride, tantalum carbide, tantalum oxide, aluminum oxide, aluminum oxide trihydrate, magnesium oxide, mica, talc, nanoclay, Magnesium hydroxide, or a combination comprising at least one of the foregoing. A single primary filler, or a combination of secondary fillers can be used to provide the desired balance of properties.

視需要,填料可利用含矽塗層(例如,一有機官能矽氧烷矽烷偶聯劑(organofunctional alkoxy silane coupling agent))來表面處理。可使用一鋯酸鹽或鈦酸鹽偶聯劑。此等偶聯劑可改良填料在聚合物基質中之分散並降低最終複合電路基材之吸水率。填料組分可基於填料之重量包含5體積%至50體積%之微球體及70體積%至30體積%之熔融非晶形氧化矽作為次要填料。 If desired, the filler may be surface treated with a ruthenium containing coating (e.g., an organofunctional alkoxy silane coupling agent). A zirconate or titanate coupling agent can be used. These coupling agents improve the dispersion of the filler in the polymer matrix and reduce the water absorption of the final composite circuit substrate. The filler component may comprise from 5 to 50% by volume of microspheres and from 70 to 30% by volume of molten amorphous cerium oxide as a secondary filler, based on the weight of the filler.

介電層亦可視需要含有一可用於使層耐燃之阻燃劑。此等阻燃劑可經鹵化或未經鹵化。阻燃劑可基於介電層之體積以0體積%至30體積%之量存在於介電層中。 The dielectric layer may also optionally contain a flame retardant which is useful for rendering the layer flame resistant. These flame retardants can be halogenated or unhalogenated. The flame retardant may be present in the dielectric layer in an amount of from 0% by volume to 30% by volume based on the volume of the dielectric layer.

在一實施態樣中,阻燃劑係無機物且係以粒子形式存在。一例示性無機阻燃劑係一金屬水合物(metal hydrate),其具有(例如)1奈米至500奈米、較佳為1奈米至200奈米、或5奈米至200奈米、或10奈米至200奈米之體積平均粒子直徑;或者,體積平均粒子直徑係為500奈米至15微米,例如1微米至5微米。金屬水合物係一金屬(例如Mg、Ca、Al、Fe、Zn、Ba、Cu、Ni、或一包含上述之至少一者之組合)之水合物。Mg、Al、或Ca之水合物係特別佳的,例如氫氧化鋁、氫氧化鎂、氫氧化鈣、氫氧化鐵、氫氧化鋅、氫氧化銅及氫氧化鎳;以及鋁酸鈣之水合物、石膏二水合物、硼酸鋅及偏硼酸鋇。可使用此等水合物之組合物,例如一含有Mg以及Ca、Al、Fe、Zn、Ba、Cu及Ni之一或多者之水合物。一較佳的複合金屬水合物具有式MgMx.(OH)y,其中M為Ca、Al、Fe、Zn、Ba、Cu或Ni,x為0.1至10,且y為2至32。阻燃劑粒子可經塗覆或以其他方式處理以改良分散及其他性質。 In one embodiment, the flame retardant is inorganic and is present in the form of particles. An exemplary inorganic flame retardant is a metal hydrate having, for example, 1 nm to 500 nm, preferably 1 nm to 200 nm, or 5 nm to 200 nm, Or a volume average particle diameter of from 10 nm to 200 nm; or, the volume average particle diameter is from 500 nm to 15 μm, for example from 1 μm to 5 μm. The metal hydrate is a hydrate of a metal such as Mg, Ca, Al, Fe, Zn, Ba, Cu, Ni, or a combination comprising at least one of the foregoing. Hydrates of Mg, Al, or Ca are particularly preferred, such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, iron hydroxide, zinc hydroxide, copper hydroxide, and nickel hydroxide; and hydrates of calcium aluminate. , gypsum dihydrate, zinc borate and barium metaborate. A composition of such a hydrate can be used, for example, a hydrate containing Mg and one or more of Ca, Al, Fe, Zn, Ba, Cu, and Ni. A preferred complex metal hydrate has the formula MgMx.(OH) y wherein M is Ca, Al, Fe, Zn, Ba, Cu or Ni, x is from 0.1 to 10, and y is from 2 to 32. The flame retardant particles can be coated or otherwise treated to improve dispersion and other properties.

或者,或除無機阻燃劑以外,可使用有機阻燃劑。有機阻燃劑之實例包括三聚氰胺三聚氰酸酯(melamine cyanurate)、微細粒徑三聚氰胺多磷酸酯(fine particle size melamine polyphosphate)、各種其他含磷化合物(例如芳族亞膦酸酯、二亞膦酸酯、膦酸酯、及磷酸酯)、特定的聚矽倍半氧烷(certain polysilsesquioxane)、矽氧烷、及鹵化化合物(例如六氯內亞甲基四氫酞酸(hexachloroendomethylenetetrahydrophthalic acid,HET酸)、四溴酞酸及二溴新戊二醇)。一阻燃劑(例如一含溴阻燃劑)可以20phr(份數/每百份樹脂)至60phr、特別為30phr至45phr之量存在。溴化阻燃劑之實例包括Saytex BT93W(乙烯雙四溴酞醯亞胺)、Saytex 120(十四溴二苯氧基苯)、及Saytex 102(十溴二苯氧化物(decabromodiphenyl oxide))。阻燃劑可與一增效劑(synergist)組合使用,例如一鹵化阻燃劑可與一增效劑(例如三氧化銻)組合使用,且一含磷阻燃劑可與一含氮化合物(例如三聚氰胺)組合使用。 Alternatively, or in addition to the inorganic flame retardant, an organic flame retardant can be used. Examples of the organic flame retardant include melamine cyanurate, fine particle size melamine polyphosphate, various other phosphorus-containing compounds (for example, an aromatic phosphonite, diphosphorane). Acid esters, phosphonates, and phosphates, specific polysilsesquioxanes, oxoxanes, and halogenated compounds (eg, hexachloroendomethylenetetrahydrophthalic acid (HET acid) ), tetrabromodecanoic acid and dibromo neopentyl glycol). A flame retardant (e.g., a bromine-containing flame retardant) may be present in an amount from 20 phr (parts per hundred resin) to 60 phr, particularly from 30 phr to 45 phr. Examples of brominated flame retardants include Saytex BT93W (ethylene bistetrabromoimide), Saytex 120 (tetradecyldiphenoxybenzene), and Saytex 102 (decabromodiphenyl oxide). The flame retardant can be used in combination with a synergist, for example, a halogenated flame retardant can be used in combination with a synergist (such as antimony trioxide), and a phosphorus-containing flame retardant can be combined with a nitrogen-containing compound ( For example, melamine is used in combination.

用於形成電路材料之有用的導電層包括(例如)不銹鋼、銅、金、銀、鋁、鋅、錫、鉛、過渡金屬、及包含上述之至少一者之合金。關於導電層之厚度並無具體限制,且對於導電層之形狀、大小、或表面之紋理亦無任何限制。導電層可具有3微米至200微米、特別為9微米至180微米之厚度。當存在二或多個導電層時,二個層之厚度可相同或不同。在一例示性實施態樣中,導電層係一銅層。適宜的導電層包括一導電金屬之薄層,例如目前形成電路中所用之銅箔,例如,電沉積銅箔。銅箔可具有小於或等於2微米、特別小於或等於0.7微米之均方根(RMS)粗糙度, 其中粗糙度係使用白光干涉法利用Veeco儀器WYCO光學輪廓儀來量測。本文所用之各種材料及物件(包括磁性加強層、介電層、磁-介電基材、電路材料、及包含該等電路材料之電子裝置)可藉由此項技術中通常已知之方法形成。 Useful conductive layers for forming circuit materials include, for example, stainless steel, copper, gold, silver, aluminum, zinc, tin, lead, transition metals, and alloys comprising at least one of the foregoing. The thickness of the conductive layer is not particularly limited, and there is no limitation on the shape, size, or texture of the surface of the conductive layer. The conductive layer may have a thickness of from 3 micrometers to 200 micrometers, particularly from 9 micrometers to 180 micrometers. When two or more conductive layers are present, the thicknesses of the two layers may be the same or different. In an exemplary embodiment, the conductive layer is a copper layer. Suitable conductive layers include a thin layer of conductive metal, such as the copper foil currently used in forming circuits, such as electrodeposited copper foil. The copper foil may have a root mean square (RMS) roughness of less than or equal to 2 microns, particularly less than or equal to 0.7 microns, The roughness was measured using a white light interferometry using a Veeco instrument WYCO optical profiler. Various materials and articles used herein (including magnetic reinforcing layers, dielectric layers, magnetic-dielectric substrates, circuit materials, and electronic devices incorporating such circuit materials) can be formed by methods generally known in the art.

導電層可藉由在模製之前將導電層放置於模具中、藉由將導電層層壓於磁-介電基材上、藉由直接雷射結構化(direct laser structuring)、或藉由經由一黏合層(adhesive layer)將導電層黏著至基材來施加。舉例而言,一經層壓之基材可包含一可位於導電層與磁-介電基材之間之視需要之聚氟碳膜(polyfluorocarbon film)、及一可位於聚氟碳化合物膜與導電層之間之經微玻璃加強之氟碳聚合物的層。經微玻璃加強之氟碳聚合物之層可增加導電層對磁-介電基材之黏合。微玻璃可基於層之總重量以4重量%至30重量%之量存在。微玻璃可具有小於或等於900微米、特別為小於或等於500微米之最長長度標度(longest length scale)。微玻璃可為科羅拉多州丹佛(Denver,Colorado)之約翰斯曼維爾公司(Johns-Manville Corporation)出售之微玻璃類型。聚氟碳膜包含含氟聚合物(例如聚四氟乙烯(PTFE)、氟化乙烯-丙烯共聚物(例如Teflon FEP)、及具有四氯乙烯主鏈以及全氟化烷氧基側鏈之共聚物(例如Teflon PFA))。 The conductive layer can be formed by placing the conductive layer in the mold prior to molding, by laminating the conductive layer on the magnetic-dielectric substrate, by direct laser structuring, or by An adhesive layer adheres the conductive layer to the substrate for application. For example, a laminated substrate may comprise a desired polyfluorocarbon film between the conductive layer and the magnetic-dielectric substrate, and a polyfluorocarbon film and conductive A layer of microglass-reinforced fluorocarbon polymer between the layers. The microglass-reinforced layer of fluorocarbon polymer increases the adhesion of the conductive layer to the magnetic-dielectric substrate. The microglass may be present in an amount from 4% to 30% by weight, based on the total weight of the layer. The microglass may have a longest length scale of less than or equal to 900 microns, particularly less than or equal to 500 microns. The microglass can be of the microglass type sold by Johns-Manville Corporation of Denver, Colorado. The polyfluorocarbon film comprises a fluoropolymer (for example, polytetrafluoroethylene (PTFE), a fluorinated ethylene-propylene copolymer (for example, Teflon FEP), and a copolymer having a tetrachloroethylene main chain and a perfluorinated alkoxy side chain. (eg Teflon PFA)).

導電層可藉由雷射直接結構化來施加。此處,磁-介電基材可包含一雷射直接結構化添加劑,使用雷射用於輻照基材之表面,形成一雷射直接結構化添加劑之軌跡(track),並將一導電金屬施加至該軌跡。雷射直接結構化添加劑可包含一金屬氧化 物粒子,例如氧化鈦及銅鉻氧化物。雷射直接結構化添加劑可包含一尖晶石系無機金屬氧化物粒子,例如尖晶石銅。金屬氧化物可經(例如)一包含錫及銻(例如,基於塗層之總重量,50重量%至99重量%之錫及1重量%至50重量%之銻)之組合物塗覆。雷射直接結構化添加劑可基於100份之各別組合物而包含2份至20份之添加劑。輻射可利用波長為1064奈米之YAG雷射在10瓦之輸出功率、80千赫之頻率、及3公尺/秒之速率下執行。導電金屬可在包含(例如)銅之一無電電鍍浴中使用一電鍍製程來施加。 The conductive layer can be applied by direct direct structuring of the laser. Here, the magnetic-dielectric substrate may comprise a laser direct structuring additive, using a laser for irradiating the surface of the substrate to form a track of a laser direct structuring additive, and a conductive metal Applied to the trajectory. Laser direct structuring additive may comprise a metal oxide Particles such as titanium oxide and copper chromium oxide. The laser direct structuring additive may comprise a spinel-based inorganic metal oxide particle, such as spinel copper. The metal oxide can be applied, for example, to a composition comprising tin and antimony (e.g., from 50% to 99% by weight tin and from 1% to 50% by weight, based on the total weight of the coating). The laser direct structuring additive may comprise from 2 parts to 20 parts of the additive based on 100 parts of the respective composition. Radiation can be performed using a YAG laser having a wavelength of 1064 nm at a power output of 10 watts, a frequency of 80 kHz, and a rate of 3 meters per second. The conductive metal can be applied using an electroplating process in an electroless plating bath containing, for example, copper.

或者,導電層可藉由以黏附方式施加該導電層來施加。在一實施態樣中,導電層係電路(另一電路之金屬化層),例如,一撓性電路。舉例而言,一黏合層可設置於該(等)導電層中之一或二者與基材之間。黏合層可包含聚(伸芳基醚);以及一羧基官能化聚丁二烯或聚異戊二烯聚合物,其包含丁二烯、異戊二烯、或丁二烯及異戊二烯單元、及0重量%至小於或等於50重量%之可共固化單體單元;其中黏合層之組成係與基材層之組成不相同。黏合層可以2公克/立方公尺至15公克/立方公尺之量存在。聚(伸芳基醚)可包含羧基官能化聚(伸芳基醚)。聚(伸芳基醚)可為聚(伸芳基醚)與環酐之反應產物、或聚(伸芳基醚)與馬來酸酐之反應產物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為一羧基官能化丁二烯-苯乙烯共聚物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為聚丁二烯或聚異戊二烯聚合物與環酐之反應產物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為馬來酸酐化聚丁二烯-苯乙烯或馬來酸酐化聚異戊二烯-苯乙烯共聚物。在特定材料及電路材料之形式允許之情形中,可使用此項技術中已知之 其他方法來施加導電層,例如,電沉積、化學蒸氣沉積、層壓等。 Alternatively, the conductive layer can be applied by applying the conductive layer in an adhesive manner. In one embodiment, the conductive layer is a circuit (a metallization layer of another circuit), such as a flexible circuit. For example, an adhesive layer can be disposed between one or both of the (etc.) conductive layers and the substrate. The adhesive layer may comprise a poly(aryl ether); and a carboxyl functionalized polybutadiene or polyisoprene polymer comprising butadiene, isoprene, or butadiene and isoprene a unit, and 0% by weight to less than or equal to 50% by weight of the co-curable monomer unit; wherein the composition of the adhesive layer is different from the composition of the substrate layer. The adhesive layer may be present in an amount from 2 g/m 3 to 15 g/m 3 . The poly(arylene ether) may comprise a carboxyl functional poly(strandyl ether). The poly(alkylene ether) may be a reaction product of a poly(aryl ether) and a cyclic anhydride, or a reaction product of a poly(aryl ether) and maleic anhydride. The carboxyl functionalized polybutadiene or polyisoprene polymer can be a carboxyl functionalized butadiene-styrene copolymer. The carboxyl functionalized polybutadiene or polyisoprene polymer can be the reaction product of a polybutadiene or polyisoprene polymer with a cyclic anhydride. The carboxyl functionalized polybutadiene or polyisoprene polymer can be a maleated polybutadiene-styrene or a maleated polyisoprene-styrene copolymer. In the case where the specific material and the form of the circuit material permit, the known in the art can be used. Other methods are used to apply a conductive layer, such as electrodeposition, chemical vapor deposition, lamination, and the like.

在磁性加強層包含一介電強化物時,磁性加強層可藉由例如化學蒸氣沉積、電子束沉積、層壓、浸塗、噴塗、反向輥塗覆、輥上刮刀(knife-over-roll)、板上刮刀(knife-over-plate)、計量棒塗覆(metering rod coating)、流動塗覆等,於介電加強層塗覆磁性層(例如,利用一巨觀連續磁性層或利用磁性粒子)而形成。磁性層可作為一包含磁性層或其前驅物及適宜溶劑之溶液而施加至介電加強層。磁性層可以相同或不同方式施加至介電加強層之兩側。第一磁性層及第二磁性層之厚度可獨立為1微米至5微米。或者,在介電加強層係纖維之情形中,纖維可藉由上述方法浸漬於磁性層。 Where the magnetic reinforcement layer comprises a dielectric reinforcement, the magnetic reinforcement layer can be by, for example, chemical vapor deposition, electron beam deposition, lamination, dip coating, spray coating, reverse roll coating, knife-over-roll ), knife-over-plate, metering rod coating, flow coating, etc., coating the magnetic layer on the dielectric reinforcement layer (eg, using a giant continuous magnetic layer or utilizing magnetic properties) Formed by particles). The magnetic layer can be applied to the dielectric reinforcement layer as a solution comprising a magnetic layer or a precursor thereof and a suitable solvent. The magnetic layers can be applied to both sides of the dielectric reinforcing layer in the same or different manner. The thickness of the first magnetic layer and the second magnetic layer may be independently from 1 micrometer to 5 micrometers. Alternatively, in the case of dielectric reinforcing layer fibers, the fibers may be impregnated into the magnetic layer by the above method.

在另一實施態樣中,磁性粒子可在介電加強層形成期間添加至介電加強層。舉例而言,可將一包含介電加強層及磁性粒子之熔融或溶解液體混合物紡成纖維以形成磁性加強層。 In another embodiment, the magnetic particles can be added to the dielectric reinforcement layer during formation of the dielectric reinforcement layer. For example, a molten or dissolved liquid mixture comprising a dielectric reinforcing layer and magnetic particles can be spun into fibers to form a magnetic reinforcing layer.

介電層可藉由直接澆鑄至磁性層上而形成或可產生一可層壓至磁性層上之介電層。介電層可基於所選聚合物而產生。舉例而言,在聚合物包含一含氟聚合物(例如PTFE)時,聚合物可與一第一載劑液體混合。混合物可包含聚合物粒子存於第一載劑液體中之分散液(即,乳液)、聚合物之液體微滴或聚合物之單體或寡聚前驅物存於第一載劑液體中之分散液、或聚合物存於第一載劑液體中之溶液。若聚合物為液體,則可不需要第一載劑液體。 The dielectric layer can be formed by direct casting onto the magnetic layer or can produce a dielectric layer that can be laminated to the magnetic layer. The dielectric layer can be produced based on the selected polymer. For example, when the polymer comprises a fluoropolymer (e.g., PTFE), the polymer can be mixed with a first carrier liquid. The mixture may comprise a dispersion of the polymer particles in the first carrier liquid (ie, an emulsion), a liquid droplet of the polymer, or a dispersion of the monomer or oligomeric precursor of the polymer in the first carrier liquid. A solution of the liquid, or polymer, in the first carrier liquid. If the polymer is a liquid, the first carrier liquid may not be needed.

第一載劑液體(若存在)之選擇可基於特定聚合體 (polymeric)及其中欲引入至介電層之聚合體的形式。若期望以溶液方式引入聚合體,則選擇用於該特定聚合物之溶液作為載劑液體,例如,N-甲基吡咯啶酮(NMP)可為一用於聚醯亞胺之溶液的適宜載劑液體。若期望引入聚合物作為一分散液,則載劑液體可包含一其中聚合物不溶之液體,例如,水可為用於PTFE粒子之分散液的一適宜載劑液體且可為用於聚醯胺酸之乳液或丁二烯單體之乳液的一適宜載劑液體。 The choice of the first carrier liquid, if any, can be based on the particular polymer (polymeric) and the form of the polymer to be introduced into the dielectric layer. If it is desired to introduce the polymer in solution, the solution for the particular polymer is selected as the carrier liquid. For example, N-methylpyrrolidone (NMP) can be a suitable loading for a solution of polyimine. Liquid. If it is desired to introduce the polymer as a dispersion, the carrier liquid may comprise a liquid in which the polymer is insoluble, for example, water may be a suitable carrier liquid for the dispersion of PTFE particles and may be used for polyamines. A suitable carrier liquid for the emulsion of acid or emulsion of butadiene monomer.

介電填料組分可視需要分散於一第二載劑液體中,或與第一載劑液體(或在不使用第一載劑之情況下,液體聚合物)混合。第二載劑液體可為與第一載劑液體相同之液體或可為除第一載劑液體外與第一載劑液體可混溶之液體。舉例而言,若第一載劑液體係水,則第二載劑液體可包含水或醇。第二載劑液體可包含水。 The dielectric filler component can optionally be dispersed in a second carrier liquid or mixed with the first carrier liquid (or liquid polymer without the use of the first carrier). The second carrier liquid can be the same liquid as the first carrier liquid or can be a liquid miscible with the first carrier liquid other than the first carrier liquid. For example, if the first carrier fluid system is water, the second carrier fluid can comprise water or alcohol. The second carrier liquid can comprise water.

填料分散液可包含一表面活性劑,其量係有效改性第二載劑液體之表面張力以使第二載劑液體能夠潤濕硼矽酸鹽微球體。例示性表面活性劑化合物包括離子表面活性劑及非離子表面活性劑。已發現TRITON X-100TM係用於水性填料分散液之一例示性表面活性劑。填料分散液可包含10體積%至70體積%之填料及0.1體積%至10體積%之表面活性劑,其中剩餘物包含第二載劑液體。 The filler dispersion may comprise a surfactant in an amount effective to modify the surface tension of the second carrier liquid to enable the second carrier liquid to wet the borosilicate microspheres. Exemplary surfactant compounds include ionic surfactants and nonionic surfactants. TRITON X-100 (TM) has been found to be an exemplary surfactant for aqueous dispersion dispersions. The filler dispersion may comprise from 10% to 70% by volume of filler and from 0.1% to 10% by volume of surfactant, wherein the remainder comprises a second carrier liquid.

聚合物及第一載劑液體之組合以及存於第二載劑液體中之填料分散液可經組合以形成一澆鑄混合物。在一實施態樣中,澆鑄混合物係包含10體積%至60體積%之組合聚合物與填料及 40體積%至90體積%之組合的第一與第二載劑液體。澆鑄混合物中之聚合物及填料組分之相對量可經選擇以如下所述在最終組合物中提供期望量。 The combination of the polymer and the first carrier liquid and the filler dispersion in the second carrier liquid can be combined to form a casting mixture. In one embodiment, the casting mixture comprises 10% to 60% by volume of the combined polymer and filler and A first and a second carrier liquid of a combination of 40% by volume to 90% by volume. The relative amounts of polymer and filler components in the casting mixture can be selected to provide the desired amount in the final composition as described below.

澆鑄混合物之黏度可藉由添加一黏度改性劑來調整,該黏度改性劑基於其在一特定載劑液體或載劑液體之混合物中之相容性而選擇,以延遲中空球體填料自介電複合材料之分離(即,沉降(sedimentation)或漂浮(flotation))並提供一具有黏度與習用層壓設備相容之介電複合材料。適用於水性澆鑄混合物之例示性黏度改性劑包括(例如)聚丙烯酸化合物、植物膠、及纖維素系化合物。適宜的黏度改性劑之特定實例包括聚丙烯酸、甲基纖維素、聚環氧乙烷、瓜爾膠(guar gum)、刺槐豆膠(locust bean gum)、羧甲基纖維素鈉、海藻酸鈉、及黃蓍膠(gum tragacanth)。黏度經調整之澆鑄混合物的黏度可基於逐個應用方式(application by application)進一步增加(即超過最低黏度)以使介電複合材料適於所選層壓技術。在一實施態樣中,黏度調整之澆鑄混合物可展現在室溫下所量測之10厘泊(cp)至100,000厘泊;特別為100厘泊至10,000厘泊之黏度。 The viscosity of the casting mixture can be adjusted by the addition of a viscosity modifier selected based on its compatibility in a particular carrier liquid or mixture of carrier liquids to delay the hollow sphere filler self-mediated. Separation (i.e., sedimentation or flotation) of the electrical composite material and provides a dielectric composite material having a viscosity compatible with conventional laminating equipment. Exemplary viscosity modifiers suitable for use in aqueous casting mixtures include, for example, polyacrylic compounds, vegetable gums, and cellulosic compounds. Specific examples of suitable viscosity modifiers include polyacrylic acid, methyl cellulose, polyethylene oxide, guar gum, locust bean gum, sodium carboxymethyl cellulose, alginic acid. Sodium, and gum tragacanth. The viscosity of the viscosity-adjusted casting mixture can be further increased (ie, exceeds the minimum viscosity) based on the application by application to adapt the dielectric composite to the selected lamination technique. In one embodiment, the viscosity-adjusted casting mixture can exhibit a viscosity of from 10 centipoise (cp) to 100,000 centipoise at room temperature; specifically from 100 centipoise to 10,000 centipoise.

或者,若載劑液體之黏度足以提供一在所關注時期期間不會分離之澆鑄混合物,則可省略黏度改性劑。特別地,在極小粒子(例如,具有小於0.1微米之等效球徑之粒子)之情形中,黏度改性劑之使用可並非必須的。 Alternatively, the viscosity modifier can be omitted if the viscosity of the carrier liquid is sufficient to provide a casting mixture that does not separate during the period of interest. In particular, in the case of very small particles (e.g., particles having an equivalent spherical diameter of less than 0.1 micron), the use of a viscosity modifier may not be necessary.

黏度經調整之澆鑄混合物之一層可澆鑄於磁性層上,或可經浸塗。澆鑄可藉由(例如)浸塗、流動塗覆、反向輥 塗覆、輥上刮刀、板上刮刀、計量棒塗覆等而實現。 A layer of the viscosity-adjusted casting mixture can be cast onto the magnetic layer or can be dip coated. Casting can be by, for example, dip coating, flow coating, reverse roll This is achieved by coating, on-roller scraper, on-board scraper, metering bar coating, and the like.

載劑液體及加工助劑(即,表面活性劑及黏度改性劑)可(例如)藉由蒸發及/或藉由熱分解自澆鑄層移除以固結聚合物及包含微球體之填料的介電層。 The carrier liquid and processing aid (ie, surfactant and viscosity modifier) can be removed, for example, by evaporation and/or by thermal decomposition from the cast layer to consolidate the polymer and the filler comprising the microspheres. Dielectric layer.

聚合物基質材料及填料組分之層可進一步經加熱以改性層之物理性質,例如,燒結一熱塑性材料或固化及/或後固化一熱固性材料。 The layers of polymer matrix material and filler component may be further heated to modify the physical properties of the layer, for example, sintering a thermoplastic material or curing and/or post-curing a thermoset material.

在另一方法中,一PTFE複合介電層可藉由一糊膏擠製(paste extrusion)及壓延(calendaring)製程而製得。 In another method, a PTFE composite dielectric layer can be made by a paste extrusion and calendaring process.

在又一實施態樣中,介電層可經澆鑄且接著部分固化(「經B階段」)。此等經B階段之層可經儲存且隨後用於(例如)層壓製程中。 In yet another embodiment, the dielectric layer can be cast and then partially cured ("B stage"). These B-staged layers can be stored and subsequently used, for example, in a layering process.

磁-介電基材可藉由上述方法形成。舉例而言,介電層可直接澆鑄於磁性加強層上,或磁性加強層可利用一包含介電聚合物基質組合物、介電填料、及視需要之添加劑之溶液或混合物來塗覆,例如浸塗、噴塗、反向輥塗覆、輥上刮刀、板上刮刀、計量棒塗覆、流動塗覆等。或者,在層壓製程中,磁性加強層係放置於第一介電層及第二介電層之間且在熱及壓力下層壓。在磁性加強層係纖維之情形中,介電層係流動至纖維磁性加強層中並浸漬纖維磁性加強層。如下文額外細節中所述,一黏合層可放置於纖維磁性加強層與第一介電層及第二介電層之間。 The magnetic-dielectric substrate can be formed by the above method. For example, the dielectric layer can be directly cast onto the magnetic reinforcement layer, or the magnetic reinforcement layer can be coated with a solution or mixture comprising a dielectric polymer matrix composition, a dielectric filler, and optionally an additive, such as Dip coating, spray coating, reverse roll coating, roll top scraper, plate scraper, metering bar coating, flow coating, and the like. Alternatively, in the lamination process, a magnetic reinforcement layer is placed between the first dielectric layer and the second dielectric layer and laminated under heat and pressure. In the case of a magnetic reinforcing layer fiber, the dielectric layer flows into the fiber magnetic reinforcing layer and impregnates the fiber magnetic reinforcing layer. As described in additional detail below, an adhesive layer can be placed between the fiber magnetic reinforcement layer and the first dielectric layer and the second dielectric layer.

單一包層電路材料可藉由將導電層黏著或層壓至第 一介電層或第二介電層來形成。雙包層電路材料可藉由以下形成:將第一介電層及第二介電層澆鑄或層壓至磁性層上;以及同時或依次將一第一導電元件及一第二導電元件施加至第一介電層及第二介電層。 A single cladding circuit material can be adhered or laminated to the conductive layer by A dielectric layer or a second dielectric layer is formed. The double clad circuit material can be formed by casting or laminating a first dielectric layer and a second dielectric layer onto the magnetic layer; and simultaneously or sequentially applying a first conductive element and a second conductive element to a first dielectric layer and a second dielectric layer.

在一特定實施態樣中,電路材料可藉由一種需要將第一介電層及第二介電層及磁性層放置於經塗覆或未經塗覆的導電層之一或二個片材之間(一黏合層可設置於至少一個導電層與至少一個介電基材層之間)以形成層狀結構之層壓製程而形成。或者,若使用一纖維磁性加強層,則導電層可直接接觸介電基材層或視需要之黏合層,特別不存在一中間層,其中視需要之黏合層可小於或等於第一及第二介電層之總體之總厚度的10%之厚度。接著該層狀結構可放置於一壓機(press)(例如,一真空壓機)在一壓力及溫度下並持續一段適於黏結該等層且形成一積層板之時間。層壓及固化可為單步(one-step)製程(例如,使用一真空壓機),或可為多步(multi-step)製程。在用於PTFE之單步製程中,層狀結構可放置於一壓機中,使之達到層壓壓力(例如,150磅/平方英寸至400磅/平方英寸(psi))並加熱至層壓溫度(例如,260℃至390℃)。將層壓溫度及壓力維持經過期望的持溫時間(soak time)(即,20分鐘),然後冷卻(同時仍處於壓力下)至小於或等於150℃。 In a specific embodiment, the circuit material can be placed on one or both of the coated or uncoated conductive layers by a need to place the first dielectric layer and the second dielectric layer and the magnetic layer. Between (an adhesive layer may be disposed between the at least one conductive layer and the at least one dielectric substrate layer) to form a layer forming process of the layered structure. Alternatively, if a fiber magnetic reinforcing layer is used, the conductive layer may directly contact the dielectric substrate layer or the optional adhesive layer, in particular, there is no intermediate layer, wherein the optional adhesive layer may be less than or equal to the first and second A thickness of 10% of the total thickness of the overall dielectric layer. The layered structure can then be placed in a press (e.g., a vacuum press) at a pressure and temperature for a period of time suitable for bonding the layers and forming a laminate. Lamination and curing can be a one-step process (eg, using a vacuum press), or can be a multi-step process. In a single-step process for PTFE, the layered structure can be placed in a press to achieve lamination pressure (eg, 150 psi to 400 psi) and heated to lamination Temperature (for example, 260 ° C to 390 ° C). The lamination temperature and pressure are maintained through the desired soak time (i.e., 20 minutes), then cooled (while still under pressure) to less than or equal to 150 °C.

黏合層可設置於該(等)導電層中之一或二者與介電層之間。黏合層可包含聚(伸芳基醚);以及羧基官能化聚丁二烯或聚異戊二烯聚合物,其包含丁二烯、異戊二烯、或丁二烯及 異戊二烯單元、及0至小於或等於50重量%之可共固化單體單元;其中黏合層之組成與介電基材層之組成並不相同。黏合層可以2公克/立方公尺至15公克/立方公尺之量存在。聚(伸芳基醚)可包含一羧基官能化聚(伸芳基醚)。聚(伸芳基醚)可為聚(伸芳基醚)與環酐之反應產物、或聚(伸芳基醚)與馬來酸酐之反應產物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為一羧基官能化丁二烯-苯乙烯共聚物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為聚丁二烯或聚異戊二烯聚合物與環酐之反應產物。羧基官能化聚丁二烯或聚異戊二烯聚合物可為馬來酸酐化聚丁二烯-苯乙烯或馬來酸酐化聚異戊二烯-苯乙烯共聚物。 The adhesive layer may be disposed between one or both of the (etc.) conductive layers and the dielectric layer. The adhesive layer may comprise a poly(aryl ether); and a carboxyl functionalized polybutadiene or polyisoprene polymer comprising butadiene, isoprene, or butadiene and The isoprene unit, and 0 to less than or equal to 50% by weight of the co-curable monomer unit; wherein the composition of the adhesive layer is different from the composition of the dielectric substrate layer. The adhesive layer may be present in an amount from 2 g/m 3 to 15 g/m 3 . The poly(alkylene ether) may comprise a carboxy-functional poly(strandyl ether). The poly(alkylene ether) may be a reaction product of a poly(aryl ether) and a cyclic anhydride, or a reaction product of a poly(aryl ether) and maleic anhydride. The carboxyl functionalized polybutadiene or polyisoprene polymer can be a carboxyl functionalized butadiene-styrene copolymer. The carboxyl functionalized polybutadiene or polyisoprene polymer can be the reaction product of a polybutadiene or polyisoprene polymer with a cyclic anhydride. The carboxyl functionalized polybutadiene or polyisoprene polymer can be a maleated polybutadiene-styrene or a maleated polyisoprene-styrene copolymer.

在一實施態樣中,適用於熱固性材料(例如聚丁二烯及/或聚異戊二烯)之多步製程可包含一在150℃至200℃下之過氧化物固化步驟,且部分固化之堆疊可接著在一惰性氣氛下經受一高能電子束輻射固化(E束固化(E-beam cure))或一高溫固化步驟。二階段固化之使用可賦予所得積層板異常高之交聯度。在第二階段中所用之溫度可為250℃至300℃、或聚合物之分解溫度。此高溫固化可在一烘箱中實施,但亦可在一壓機中執行,即,作為初始層壓及固化步驟之延續。特定的層壓溫度及壓力將取決於特定的黏合組合物及基材組合物,且可由熟習此項技術者容易地確定而無需過多試驗。 In one embodiment, a multi-step process suitable for use in a thermoset material such as polybutadiene and/or polyisoprene may comprise a peroxide curing step at 150 ° C to 200 ° C and partially cured The stack can then be subjected to a high energy electron beam radiation cure (E-beam cure) or a high temperature cure step under an inert atmosphere. The use of two-stage curing imparts an abnormally high degree of crosslinking to the resulting laminate. The temperature used in the second stage may range from 250 ° C to 300 ° C, or the decomposition temperature of the polymer. This high temperature curing can be carried out in an oven, but can also be carried out in a press, i.e., as a continuation of the initial lamination and curing steps. The particular lamination temperature and pressure will depend on the particular adhesive composition and substrate composition and can be readily determined by those skilled in the art without undue experimentation.

關於前述,且參照第7至8圖,已發現一採用本文所揭示磁-介電基材10之天線係適於提供一天線60,其能夠將1吉赫信號在H場平面中以至少122度之波束寬度輻射至自由空間中,以 及能夠將1吉赫信號在E場平面中以至少116度之波束寬度輻射至自由空間中且峰增益為-6.97dB,相較於比,對一不存在本文所揭示之磁-介電基材10之天線而言,則分別為92度、102度、及-1.62dB。且參照第9圖,已發現以上所提及天線之阻抗及3dB增益帶寬比係較未根據一實施態樣之類似天線高5至6倍。第7至9圖圖解說明相對於一不存在本文所揭示磁-介電基材10之銅包層電路積層板,採用具有本文所揭示磁-介電基材10之銅包層電路積層板50之天線的經提高波束寬度及帶寬之量值。 With respect to the foregoing, and with reference to Figures 7 through 8, it has been discovered that an antenna employing the magnetic-dielectric substrate 10 disclosed herein is adapted to provide an antenna 60 capable of transmitting a 1 GHz signal in the H field plane with at least 122 The beam width of the beam is radiated into the free space to And capable of radiating a 1 GHz signal into the free space with a beamwidth of at least 116 degrees in the E field plane and having a peak gain of -6.97 dB, as compared to the ratio, there is no magnetic-dielectric base disclosed herein. The antenna of the material 10 is 92 degrees, 102 degrees, and -1.62 dB, respectively. Referring to Figure 9, it has been found that the impedance and 3dB gain-to-bandwidth ratio of the antennas mentioned above are 5 to 6 times higher than similar antennas not according to an embodiment. 7 through 9 illustrate the use of a copper clad circuit laminate 50 having a magnetic-dielectric substrate 10 as disclosed herein with respect to a copper clad circuit laminate that does not have the magnetic-dielectric substrate 10 disclosed herein. The increased beamwidth and bandwidth of the antenna.

能夠提供第7至9圖中所繪示之波束寬度及帶寬之一天線60(參見第6A、6B及6C圖)係採用第4C及5圖中繪示之磁-介電基材10,其中:第一介電層100及第二介電層200係自具有3.55之介電常數及0.0027之損耗角正切(loss tangent)之RO4000TM(羅傑斯(Rogers)公司)積層板製得,且二者皆係0.25毫米厚;磁性層300具有一介電常數為5.5及損耗角正切小於0.001之玻璃介電強化層630,其中厚度為0.25毫米;磁性層300更具有自磁導率為50及損耗角正切為0.05之薄膜鐵氧體製得之第一磁性層100及第二磁性層620,且二者皆係10微米厚;以及導電元件30係自40微米厚銅製得。 The antenna 60 (see FIGS. 6A, 6B, and 6C) capable of providing one of the beam widths and bandwidths illustrated in FIGS. 7-9 is a magnetic-dielectric substrate 10 illustrated in FIGS. 4C and 5, wherein : 200 system of the first dielectric layer 100 and the second dielectric layer having a dielectric constant of 3.55 from the tangent of 0.0027 and tan (loss tangent) of RO4000 TM (Rogers (Rogers) Corporation) laminates prepared, and both All are 0.25 mm thick; the magnetic layer 300 has a glass dielectric strengthening layer 630 having a dielectric constant of 5.5 and a loss tangent of less than 0.001, wherein the thickness is 0.25 mm; the magnetic layer 300 has a self-permeability of 50 and a loss angle. The first magnetic layer 100 and the second magnetic layer 620 are etched to a thickness of 0.05, and both are 10 micrometers thick; and the conductive member 30 is made of 40 micrometers thick copper.

儘管本文已參照磁性層300、610、620之厚度及磁導率之某些值來闡述磁-介電基材10及天線60之某些實施態樣,但應瞭解此等某些值僅係實例性值,且可採用與本文所揭示之本發明目的一致之個別厚度及磁導率之其他值。此外,儘管本文已闡述具有某一大小、及材料特性且經特定選擇以在1吉赫下共振之天線 60,但應瞭解本發明之範圍並不限於此,且亦涵蓋具有不同大小以在不同頻率下共振同時適於本文所揭示目的之天線。 Although certain embodiments of the magnetic-dielectric substrate 10 and the antenna 60 have been described with reference to certain values of the thickness and permeability of the magnetic layers 300, 610, 620, it should be understood that some of these values are only Exemplary values, and other values of individual thicknesses and magnetic permeability consistent with the objectives of the invention disclosed herein may be employed. In addition, although an antenna having a certain size and material properties and specifically selected to resonate at 1 GHz has been described herein. 60, however, it should be understood that the scope of the invention is not limited thereto, and antennas having different sizes to resonate at different frequencies while being suitable for the purposes disclosed herein are also contemplated.

電路總成可用於多種應用(例如電功率應用、資料儲存、及微波通信)之電子裝置中,例如電子積體電路晶片上之電感器、電子電路、電子封裝、模組及外殼、轉換器、及UHF、VHF、及微波天線。電路總成可用於其中施加一外部直流磁場之應用中。此外,該(等)磁性層可在超過頻率範圍100百萬赫(MHz)至800百萬赫之所有天線設計中使用而具有極好結果(大小及帶寬)。而且,一外部磁場之施加可「調諧」該(等)磁性層之磁導率、以及貼片共振頻率。 The circuit assembly can be used in electronic devices for various applications (such as electric power applications, data storage, and microwave communication), such as inductors on electronic integrated circuit chips, electronic circuits, electronic packages, modules and housings, converters, and UHF, VHF, and microwave antennas. The circuit assembly can be used in applications where an external DC magnetic field is applied. In addition, the (etc.) magnetic layer can be used in all antenna designs that exceed the frequency range of 100 megahertz (MHz) to 800 megahertz with excellent results (size and bandwidth). Moreover, the application of an external magnetic field "tunes" the magnetic permeability of the (and other) magnetic layers, as well as the patch resonant frequency.

本文所用之「層」係包括平面膜、片材等以及其他三維非平面形式。層可進一步為巨觀連續或不連續的。術語「一(a、an)」之使用並不表示數量之限制,而是表示存在所引用項目之至少一者。本文所揭示之範圍係涵蓋所列端點且可獨立組合。「組合(combination)」係涵蓋摻合物、混合物、合金、反應產物等。而且,「包含上述之至少一者之組合」意指列表涵蓋單獨各要素、以及列表之二或多種要素之組合、及列表之至少一種要素與未指定之類似要素之組合。術語「第一」、「第二」等等在本文中並不表示任何順序、數量、或重要性,而是用於區分各要素。如本文所用,術語「實質上相等」意指所比較之二個值係彼此±10%、特別為彼此±5%、更特別為彼此±1%。「或」意指「及/或」。 As used herein, "layer" includes planar films, sheets, and the like as well as other three-dimensional non-planar forms. The layers may further be giant or continuous. The use of the term "a, an" does not denote a limitation of quantity, but rather means that there is at least one of the referenced items. The ranges disclosed herein are inclusive of the listed endpoints and can be independently combined. "Combination" encompasses blends, mixtures, alloys, reaction products, and the like. Furthermore, "including a combination of at least one of the above" means that the list includes the individual elements, the combination of the two or more elements of the list, and the combination of at least one element of the list and the unspecified similar element. The terms "first", "second" and the like do not denote any order, quantity, or importance, but are used to distinguish the elements. As used herein, the term "substantially equal" means that the two values being compared are ±10% from each other, particularly ±5% to each other, more particularly ±1% from each other. "or" means "and / or".

如所揭示,本發明之一些實施態樣可包括其中當1吉赫信號經由信號線通信至導電元件時,磁-介電基材係經構形並能 夠將1吉赫信號在H場平面中以至少122度之波束寬度輻射至自由空間中,以及能夠將1吉赫信號在E場平面中以至少116度之波束寬度輻射至自由空間中之優點。 As disclosed, some embodiments of the present invention can include wherein when a 1 GHz signal is communicated to a conductive element via a signal line, the magnetic-dielectric substrate is configured and capable Enough to radiate a 1 GHz signal into the free space in the H field plane with a beamwidth of at least 122 degrees, and to be able to radiate a 1 GHz signal into the free space with a beamwidth of at least 116 degrees in the E field plane .

藉由以下實施態樣進一步說明本發明: The invention is further illustrated by the following embodiments:

實施態樣1. 一種磁-介電基材,包含:一第一介電層;一第二介電層,與該第一介電層間隔開;以及至少一磁性加強層,設置於該第一介電層與該第二介電層之間且與該第一介電層及該第二介電層緊密接觸。 Embodiment 1. A magnetic-dielectric substrate comprising: a first dielectric layer; a second dielectric layer spaced apart from the first dielectric layer; and at least one magnetic enhancement layer disposed on the first A dielectric layer and the second dielectric layer are in intimate contact with the first dielectric layer and the second dielectric layer.

實施態樣2. 如實施態樣1所述之磁-介電基材,其中該磁性加強層係包含纖維,其中該纖維係為鐵氧體纖維、鐵氧體合金纖維、鈷纖維、鈷合金纖維、鐵纖維、鐵合金纖維、鎳纖維、鎳合金纖維、包含顆粒狀鐵氧體、顆粒狀鐵氧體合金、顆粒狀鈷、顆粒狀鈷合金、顆粒狀鐵、顆粒狀鐵合金、顆粒狀鎳、顆粒狀鎳合金、或包含上述之至少一者之一組合、較佳地六角鐵氧體、磁鐵礦、或MFe2O4之聚合物纖維,其中M係Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate according to the first aspect, wherein the magnetic reinforcing layer comprises fibers, wherein the fibers are ferrite fibers, ferrite alloy fibers, cobalt fibers, cobalt alloys. Fiber, iron fiber, iron alloy fiber, nickel fiber, nickel alloy fiber, containing granular ferrite, granular ferrite alloy, granular cobalt, granular cobalt alloy, granular iron, granular iron alloy, granular nickel, a particulate nickel alloy, or a polymer fiber comprising a combination of at least one of the foregoing, preferably hexagonal ferrite, magnetite, or MFe 2 O 4 , wherein the M system is Co, Ni, Zn, V, or At least one of Mn.

實施態樣3. 如實施態樣1所述之磁-介電基材,其中該磁性加強層係包含聚合物或玻璃纖維,該等纖維塗覆有鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或包含上述磁性材料之至少一者之一組合,或係包含一含有上述纖維之至少一者的組合,較佳為該等纖維塗覆有六角鐵氧體、磁鐵礦、或MFe2O4,其中M係為Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate of embodiment 1, wherein the magnetic reinforcing layer comprises a polymer or a glass fiber coated with a ferrite, a ferrite alloy, cobalt, a combination of at least one of a cobalt alloy, iron, an iron alloy, nickel, a nickel alloy, or a magnetic material comprising the above, or a combination comprising at least one of the fibers, preferably the fibers are coated with a hexagonal iron Oxygen, magnetite, or MFe 2 O 4 , wherein the M system is at least one of Co, Ni, Zn, V, or Mn.

實施態樣4. 如實施態樣1所述之磁-介電基材,其中該磁性加強層係包含聚合物纖維,聚合物纖維包含顆粒狀鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或一包含上述磁性材料之至少一者之組合、較佳包含六角鐵氧體、磁鐵礦、或MFe2O4,其中M係為Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate according to the first aspect, wherein the magnetic reinforcing layer comprises a polymer fiber, and the polymer fiber comprises a granular ferrite, a ferrite alloy, a cobalt, a cobalt alloy. a combination of at least one of iron, iron alloy, nickel, nickel alloy, or a magnetic material comprising the above, preferably comprising hexagonal ferrite, magnetite, or MFe 2 O 4 , wherein the M system is Co, Ni, Zn At least one of V, V, or Mn.

實施態樣5. 如實施態樣1至4中任一或多者所述之磁-介電基材,其中:該第一介電層及該第二介電層係各自獨立包含1,2-聚丁二烯、聚異戊二烯、聚丁二烯-聚異戊二烯共聚物、聚醚醯亞胺、含氟聚合物例如聚四氟乙烯、聚醯亞胺、聚醚醚酮、聚醯胺醯亞胺、聚對酞酸乙二酯、聚萘二甲酸乙二酯、聚對酞酸環己二酯、聚苯醚、烯丙基化聚苯醚或一含有上述之至少一者之組合。 The magnetic-dielectric substrate of any one or more of embodiments 1 to 4, wherein: the first dielectric layer and the second dielectric layer each independently comprise 1, 2 - polybutadiene, polyisoprene, polybutadiene-polyisoprene copolymer, polyetherimide, fluoropolymers such as polytetrafluoroethylene, polyimine, polyetheretherketone , polyamidoximine, polyethylene terephthalate, polyethylene naphthalate, poly(p-diethyl phthalate), polyphenylene ether, allylated polyphenylene ether or one containing at least the above A combination of one.

實施態樣6. 如實施態樣1至5中任一或多者所述之磁-介電基材,其中:該第一介電層及該第二介電層係各自獨立包含聚丁二烯及/或聚異戊二烯;視需要之一乙烯-丙烯液體橡膠,該乙烯-丙烯液體橡膠如基於聚碳酸酯標準物藉由凝膠滲透層析所量測具有小於或等於50,000公克/莫耳之重量平均分子量;視需要之一介電填料;以及視需要之一阻燃劑。 The magnetic-dielectric substrate of any one or more of the embodiments 1 to 5, wherein the first dielectric layer and the second dielectric layer each independently comprise polybutan Alkene and/or polyisoprene; one of the ethylene-propylene liquid rubbers as desired, which has a molecular weight of less than or equal to 50,000 g/g by gel permeation chromatography based on polycarbonate standards. The weight average molecular weight of the moir; one of the dielectric fillers as needed; and one of the flame retardants as needed.

實施態樣7. 如實施態樣1至6中任一者所述之磁-介電基材,其中:該第一介電層係完全浸漬該磁性加強層之一側;以及該第二介電層係完全浸漬該磁性加強層之對側。 The magnetic-dielectric substrate of any one of aspects 1 to 6, wherein: the first dielectric layer completely impregnates one side of the magnetic reinforcement layer; and the second dielectric layer The electrical layer is completely impregnated on the opposite side of the magnetic reinforcing layer.

實施態樣8. 如上述實施態樣中任一者所述之磁-介電基材,其中該磁性加強層係包含:一第一磁性層;一第二磁 性層,與該第一磁性層均勻地間隔開;以及一介電強化層,設置於該第一磁性層與該第二磁性層之間且與該第一磁性層及該第二磁性層緊密接觸。 The magnetic-dielectric substrate according to any one of the preceding embodiments, wherein the magnetic reinforcing layer comprises: a first magnetic layer; a second magnetic a layer randomly spaced apart from the first magnetic layer; and a dielectric strengthening layer disposed between the first magnetic layer and the second magnetic layer and in close contact with the first magnetic layer and the second magnetic layer contact.

實施態樣9. 如實施態樣8所述之磁-介電基材,其中該第一磁性層及該第二磁性層係各自包含薄膜鐵氧體。 The magnetic-dielectric substrate of embodiment 8, wherein the first magnetic layer and the second magnetic layer each comprise a thin film ferrite.

實施態樣10. 如實施態樣8所述之磁-介電基材,其中:該第一磁性層具有第一磁性層厚度;該第二磁性層具有一第二磁性層厚度;該介電強化層具有強化層厚度;強化層厚度對第一磁性層厚度之比率係等於或大於25;以及強化層厚度對第二磁性層厚度之比率係等於或大於25。 The magnetic-dielectric substrate of embodiment 8, wherein: the first magnetic layer has a first magnetic layer thickness; the second magnetic layer has a second magnetic layer thickness; the dielectric The reinforcing layer has a reinforcing layer thickness; the ratio of the thickness of the reinforcing layer to the thickness of the first magnetic layer is equal to or greater than 25; and the ratio of the thickness of the reinforcing layer to the thickness of the second magnetic layer is equal to or greater than 25.

實施態樣11. 如上述實施態樣中任一者所述之磁-介電基材,其中:該第一介電層係具有第一厚度;以及該第二介電層係具有厚度實質上等於第一厚度之第二厚度。 The magnetic-dielectric substrate according to any one of the preceding aspects, wherein: the first dielectric layer has a first thickness; and the second dielectric layer has a thickness substantially A second thickness equal to the first thickness.

實施態樣12. 如上述實施態樣中任一者所述之磁-介電基材,其中:該第一介電層係具有第一厚度;以及該第二介電層係具有厚度實質上等於第一厚度之第二厚度。 The magnetic-dielectric substrate of any of the above-described embodiments, wherein: the first dielectric layer has a first thickness; and the second dielectric layer has a thickness substantially A second thickness equal to the first thickness.

實施態樣13. 如實施態樣1或6至12中任一或多者所述之磁-介電基材,其中:該第一介電層在結構上係巨觀上平面內連續的;以及該第二介電層在結構上係巨觀上平面內連續的。 The magnetic-dielectric substrate of any one or more of embodiment 1 or 6 to 12, wherein: the first dielectric layer is structurally continuous in a superficial plane; And the second dielectric layer is structurally continuous in a superficial plane.

實施態樣14. 如上述實施態樣中任一者所述之磁-介電基材,其中:該磁性加強層至少部分地在結構上係巨觀上平面內連續的。 The magnetic-dielectric substrate of any one of the preceding embodiments, wherein the magnetic reinforcing layer is at least partially structurally continuous in a superficial plane.

實施態樣15. 如上述實施態樣中任一者所述之磁-介電基材,其中:該磁性加強層係具有平面內磁性各向異性。 The magnetic-dielectric substrate according to any one of the preceding aspects, wherein the magnetic reinforcing layer has in-plane magnetic anisotropy.

實施態樣16. 如上述實施態樣中任一者所述之磁-介電基材,其中:該第一介電層係具有界定一第一覆蓋區的外部尺寸;該第二介電層係具有界定一大小實質上等於該第一覆蓋區之第二覆蓋區的外部尺寸;以及該磁性加強層係具有界定一大小實質上等於該第一覆蓋區及該第二覆蓋區之第三覆蓋區的外部尺寸。 The magnetic-dielectric substrate of any of the above-described embodiments, wherein: the first dielectric layer has an outer dimension defining a first footprint; the second dielectric layer Having an outer dimension defining a second coverage area substantially equal to the first coverage area; and the magnetic reinforcement layer has a third coverage defining a size substantially equal to the first coverage area and the second coverage area The outer dimensions of the area.

實施態樣17. 如上述實施態樣中任一者所述之磁-介電基材,其中:該第一介電層、該第二介電層、及該磁性加強層各自在結構上係平面的。 The magnetic-dielectric substrate according to any one of the preceding aspects, wherein the first dielectric layer, the second dielectric layer, and the magnetic reinforcing layer are each structurally flat.

實施態樣18. 如上述實施態樣中任一者所述之磁-介電基材,更包含:一導電接地層,設置於該第一介電層之一外表面上;以及一導電元件,設置於該第二介電層之一外表面上,該導電元件係與該導電接地層間隔開。 The magnetic-dielectric substrate according to any one of the preceding aspects, further comprising: a conductive ground layer disposed on an outer surface of the first dielectric layer; and a conductive element And disposed on an outer surface of the second dielectric layer, the conductive element is spaced apart from the conductive ground layer.

實施態樣19. 如實施態樣18所述之磁-介電基材,其中:該第一介電層係具有界定一第一覆蓋區的外部尺寸;該第二介電層係具有界定一大小實質上等於該第一覆蓋區之第二覆蓋區的外部尺寸;該磁性加強層係具有界定一大小實質上等於該第一覆蓋區及該第二覆蓋區之第三覆蓋區的外部尺寸;該導電接地層具有界定一大小實質上等於該第一覆蓋區之第四覆蓋區的外部尺寸;以及該導電元件具有界定一大小小於該第二覆蓋區之第五覆蓋區的外部尺寸。 The magnetic-dielectric substrate of embodiment 18, wherein: the first dielectric layer has an outer dimension defining a first footprint; the second dielectric layer has a defined The size is substantially equal to an outer dimension of the second coverage area of the first coverage area; the magnetic reinforcement layer has an outer dimension defining a third coverage area substantially equal in size to the first coverage area and the second coverage area; The conductive ground layer has an outer dimension defining a fourth footprint that is substantially equal to the first footprint; and the conductive element has an outer dimension that defines a fifth footprint that is smaller than the second footprint.

實施態樣20. 如實施態樣19所述之磁-介電基材,其中:該第五覆蓋區之面積對該第二覆蓋區之面積之比率係等於或小於0.3。 The magnetic-dielectric substrate of embodiment 19, wherein the ratio of the area of the fifth coverage area to the area of the second coverage area is equal to or less than 0.3.

實施態樣21. 如實施態樣20所述之磁-介電基材,其中:該導電元件係設置於該第二介電層之中心上。 The magnetic-dielectric substrate of embodiment 20, wherein the conductive element is disposed on a center of the second dielectric layer.

實施態樣22. 如實施態樣18至21中任一者所述之磁-介電基材,更包含:一信號線,經設置與該導電元件信號通信。 The magnetic-dielectric substrate of any one of embodiments 18 to 21, further comprising: a signal line disposed in signal communication with the conductive element.

實施態樣23. 如實施態樣22所述之磁-介電基材,其中:該信號線包含一同軸電纜,該同軸電纜具有一經設置與該導電元件信號通信之中央信號導體、及一經設置與該導電接地層電接地通信之接地鞘。 The magnetic-dielectric substrate of embodiment 22, wherein: the signal line comprises a coaxial cable having a central signal conductor disposed in signal communication with the conductive element, and a set A grounding sheath that communicates electrically with the conductive ground plane.

實施態樣24. 如實施態樣22至23中任一者所述之磁-介電基材,其中:該導電元件係經圖案化以形成線內及平面內導電不連續性。 The magnetic-dielectric substrate of any one of embodiments 22 to 23, wherein the conductive element is patterned to form in-line and in-plane conductive discontinuities.

實施態樣25. 如實施態樣24所述之磁-介電基材,其中:當1吉赫信號經由該信號線通信至該導電元件時,該磁-介電基材係經構形並能夠將1吉赫信號在H場平面中以至少122度之波束寬度輻射至自由空間中,以及能夠將1吉赫信號在E場平面中以至少116度之波束寬度輻射至自由空間中。 The magnetic-dielectric substrate of embodiment 24, wherein: when a 1 GHz signal is communicated to the conductive element via the signal line, the magnetic-dielectric substrate is configured and The 1 GHz signal can be radiated into the free space in the H field plane with a beamwidth of at least 122 degrees, and the 1 GHz signal can be radiated into the free space in the E field plane with a beamwidth of at least 116 degrees.

實施態樣26. 如上述實施態樣中任一者所述之磁-介電基材,其中:該第二介電層與該第一介電層係均勻地間隔開。 The magnetic-dielectric substrate of any one of the preceding embodiments, wherein the second dielectric layer is evenly spaced from the first dielectric layer.

實施態樣27. 如實施態樣22至24中任一者所述之 磁-介電基材,其中:該導電接地層及該導電元件係為形成一銅包層電路積層板之積層板;以及,當1吉赫信號經由該信號線通信至該導電元件時,該磁-介電基材係經構形並能夠將1吉赫信號在H場平面中以至少122度之波束寬度輻射至自由空間中,以及能夠將1吉赫信號在E場平面中以至少116度之波束寬度輻射至自由空間中。 Embodiment 27. The method of any one of embodiments 22 to 24 a magnetic-dielectric substrate, wherein: the conductive ground layer and the conductive element are a laminate forming a copper clad circuit laminate; and, when a 1 GHz signal is communicated to the conductive element via the signal line, The magnetic-dielectric substrate is configured and capable of radiating a 1 GHz signal into the free space in a H field plane with a beamwidth of at least 122 degrees, and capable of having a 1 GHz signal in the E field plane of at least 116 The beamwidth of the degree is radiated into the free space.

儘管本文已闡述關於天線之特徵之某些組合,但應瞭解該等某些組合僅用於說明目的且可明確地或等效地、個別地或與本文所揭示之任何其他特徵組合以根據一實施態樣之任何組合或所有而採用該等特徵中之任一者之任一組合。任一及所有該等組合係涵蓋於本文中且視為在本發明之範圍內。 Although certain combinations of features of the antenna have been set forth herein, it is understood that some combinations are for illustrative purposes only and may be explicitly or equivalently, individually or in combination with any other feature disclosed herein to Any combination or combination of any of these features may be employed in any combination. Any and all such combinations are encompassed herein and are considered to be within the scope of the invention.

儘管已參照例示性實施態樣闡述本發明,但熟習此項技術者應瞭解可作各種改變且可用其等效物替代其要素而不背離本發明之範圍。另外,可對本發明之教示實施多種改變以適應一特定情況或材料而不背離本發明之基本範圍。因此,並不意欲將本發明限於所揭示之作為預期實施本發明之最佳或唯一模式之特定實施態樣,而是本發明將包括屬於隨附申請專利範圍範圍內之所有實施態樣。而且,在圖式及說明中,已揭示例示性實施態樣,且儘管採用特定術語,但除非另有說明,否則僅使用一般及敍述性意義且並非用於限制之目的。 Although the present invention has been described with reference to the exemplary embodiments thereof, it is understood that those skilled in the art can make various changes and may substitute the equivalents thereof without departing from the scope of the invention. In addition, many modifications may be made to the teachings of the invention to adapt to a particular situation or material without departing from the scope of the invention. Therefore, the invention is not intended to be limited to the specific embodiments of the inventions disclosed herein. Rather, the present invention has been described by way of illustration and description, and in the

10‧‧‧磁-介電基材/基材 10‧‧‧Magnetic-dielectric substrate/substrate

100‧‧‧第一介電層 100‧‧‧First dielectric layer

200‧‧‧第二介電層 200‧‧‧Second dielectric layer

300‧‧‧磁性加強層/磁性層 300‧‧‧Magnetic reinforcement/magnetic layer

1000‧‧‧細節 1000‧‧‧Details

Claims (29)

一種磁-介電基材,包含:一第一介電層;一第二介電層,與該第一介電層間隔開;以及至少一磁性加強層(magnetic reinforcing layer),設置於該第一介電層與該第二介電層之間且與該第一介電層及該第二介電層緊密接觸。 A magnetic-dielectric substrate comprising: a first dielectric layer; a second dielectric layer spaced apart from the first dielectric layer; and at least one magnetic reinforcing layer disposed on the first A dielectric layer and the second dielectric layer are in intimate contact with the first dielectric layer and the second dielectric layer. 如請求項1所述之磁-介電基材,其中該磁性加強層係包含纖維,其中該纖維係為鐵氧體(ferrite)纖維、鐵氧體合金纖維、鈷纖維、鈷合金纖維、鐵纖維、鐵合金纖維、鎳纖維、鎳合金纖維、包含顆粒狀鐵氧體(particulate ferrite)、顆粒狀鐵氧體合金、顆粒狀鈷、顆粒狀鈷合金、顆粒狀鐵、顆粒狀鐵合金、顆粒狀鎳、或顆粒狀鎳合金的聚合物纖維、或包含上述之至少一者之一組合。 The magnetic-dielectric substrate according to claim 1, wherein the magnetic reinforcing layer comprises fibers, wherein the fibers are ferrite fibers, ferrite alloy fibers, cobalt fibers, cobalt alloy fibers, iron. Fiber, ferroalloy fiber, nickel fiber, nickel alloy fiber, containing particulate ferrite, granular ferrite alloy, granular cobalt, granular cobalt alloy, granular iron, granular iron alloy, granular nickel Or a polymeric fiber of a particulate nickel alloy, or a combination comprising at least one of the foregoing. 如請求項2所述之磁-介電基材,其中該磁性加強層係包含六角鐵氧體(hexaferrite)纖維、磁鐵礦纖維、或MFe2O4纖維,其中M係為Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate according to claim 2, wherein the magnetic reinforcing layer comprises hexaferrite fibers, magnetite fibers, or MFe 2 O 4 fibers, wherein the M system is Co, Ni, At least one of Zn, V, or Mn. 如請求項1所述之磁-介電基材,其中該磁性加強層係包含塗覆有鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或包含上述磁性材料之至少一者之一組合的聚合物或玻璃纖維,或係包含一含有上述纖維之至少一者的組合。 The magnetic-dielectric substrate according to claim 1, wherein the magnetic reinforcing layer comprises a ferrite, a ferrite alloy, a cobalt, a cobalt alloy, an iron, an iron alloy, a nickel, a nickel alloy, or the like. A polymer or glass fiber combined with at least one of the magnetic materials, or a combination comprising at least one of the foregoing fibers. 如請求項4所述之磁-介電基材,其中該磁性加強層係包含塗覆 有六角鐵氧體、磁鐵礦、或MFe2O4的聚合物或玻璃纖維,其中M係為Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate according to claim 4, wherein the magnetic reinforcing layer comprises a polymer or glass fiber coated with hexagonal ferrite, magnetite, or MFe 2 O 4 , wherein the M system is Co. At least one of Ni, Zn, V, or Mn. 如請求項1所述之磁-介電基材,其中該磁性加強層係包含含有顆粒狀鐵氧體、鐵氧體合金、鈷、鈷合金、鐵、鐵合金、鎳、鎳合金、或包含上述磁性材料之至少一者之一組合的聚合物纖維。 The magnetic-dielectric substrate according to claim 1, wherein the magnetic reinforcing layer comprises a particulate ferrite, a ferrite alloy, cobalt, a cobalt alloy, iron, an iron alloy, nickel, a nickel alloy, or the like A polymer fiber combined with at least one of the magnetic materials. 如請求項6所述之磁-介電基材,其中該聚合物纖維係包含六角鐵氧體、磁鐵礦、或MFe2O4,其中M係為Co、Ni、Zn、V、或Mn之至少一者。 The magnetic-dielectric substrate according to claim 6, wherein the polymer fiber comprises hexagonal ferrite, magnetite, or MFe 2 O 4 , wherein the M system is Co, Ni, Zn, V, or Mn. At least one of them. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層及該第二介電層係各自獨立包含1,2-聚丁二烯、聚異戊二烯、聚丁二烯-聚異戊二烯共聚物、聚醚醯亞胺、含氟聚合物(fluoropolymer)、聚醯亞胺、聚醚醚酮、聚醯胺醯亞胺、聚對酞酸乙二酯(polyethylene terephthalate)、聚萘二甲酸乙二酯(polyethylene naphthalate)、聚對酞酸環己二酯(polycyclohexylene terephthalate)、聚苯醚(polyphenylene ether)、烯丙基化聚苯醚(allylated polyphenylene ether)或一含有上述之至少一者之組合。 The magnetic-dielectric substrate according to any one of claims 1 to 7, wherein the first dielectric layer and the second dielectric layer each independently comprise 1,2-polybutadiene, polyisotopic Pentadiene, polybutadiene-polyisoprene copolymer, polyetherimine, fluoropolymer, polyimide, polyetheretherketone, polyamidoximine, polypair Polyethylene terephthalate, polyethylene naphthalate, polycyclohexylene terephthalate, polyphenylene ether, allylated polyphenylene ether (allylated polyphenylene ether) or a combination comprising at least one of the foregoing. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層及該第二介電層係各自獨立包含聚丁二烯及/或聚異戊二烯;視需要之一乙烯-丙烯液體橡膠(ethylene-propylene liquid rubber),該乙烯-丙烯液體橡膠如基於聚碳酸酯標準物藉由凝膠滲透層析量測具有小於或等於50,000公克/莫耳之重量平均分子量;視需要之一介電填料;以及視需要之一阻燃劑。 The magnetic-dielectric substrate according to any one of claims 1 to 7, wherein the first dielectric layer and the second dielectric layer each independently comprise polybutadiene and/or polyisoprene Ethylene; ethylene-propylene liquid (ethylene-propylene liquid) Rubber), the ethylene-propylene liquid rubber has a weight average molecular weight of less than or equal to 50,000 g/mole as measured by gel permeation chromatography based on a polycarbonate standard; one of the dielectric fillers as needed; One of the flame retardants. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層係完全浸漬(impregnate)該磁性加強層之一側;以及該第二介電層係完全浸漬該磁性加強層之對側。 The magnetic-dielectric substrate according to any one of claims 1 to 7, wherein: the first dielectric layer is impregnate one side of the magnetic reinforcing layer; and the second dielectric layer is The opposite side of the magnetic reinforcing layer is completely impregnated. 如請求項1至7中任一項所述之磁-介電基材,其中該磁性加強層包含:一第一磁性層;一第二磁性層,與該第一磁性層均勻地間隔開;以及一介電強化層(dielectric reinforcement layer),設置於該第一磁性層與該第二磁性層之間且與該第一磁性層及該第二磁性層緊密接觸。 The magnetic-dielectric substrate according to any one of claims 1 to 7, wherein the magnetic reinforcing layer comprises: a first magnetic layer; and a second magnetic layer uniformly spaced apart from the first magnetic layer; And a dielectric reinforcement layer disposed between the first magnetic layer and the second magnetic layer and in close contact with the first magnetic layer and the second magnetic layer. 如請求項11所述之磁-介電基材,其中該第一磁性層及該第二磁性層係各自包含薄膜鐵氧體。 The magnetic-dielectric substrate of claim 11, wherein the first magnetic layer and the second magnetic layer each comprise a thin film ferrite. 如請求項11所述之磁-介電基材,其中:該第一磁性層具有第一磁性層厚度;該第二磁性層具有第二磁性層厚度;該介電強化層具有強化層厚度; 強化層厚度對第一磁性層厚度之比率係等於或大於25;以及強化層厚度對第二磁性層厚度之比率係等於或大於25。 The magnetic-dielectric substrate of claim 11, wherein: the first magnetic layer has a first magnetic layer thickness; the second magnetic layer has a second magnetic layer thickness; the dielectric strengthening layer has a strengthening layer thickness; The ratio of the thickness of the reinforcing layer to the thickness of the first magnetic layer is equal to or greater than 25; and the ratio of the thickness of the reinforcing layer to the thickness of the second magnetic layer is equal to or greater than 25. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層具有第一厚度;以及該第二介電層具有厚度實質上等於第一厚度之第二厚度。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein: the first dielectric layer has a first thickness; and the second dielectric layer has a thickness substantially equal to the first thickness Two thicknesses. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層在結構上係巨觀上平面內連續的(in-plane continuous);以及該第二介電層在結構上係巨觀上平面內連續的。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein: the first dielectric layer is structurally in-plane continuous; and the second The dielectric layer is structurally continuous in a superficial plane. 如請求項1至7中任一項所述之磁-介電基材,其中:該磁性加強層至少部分地在結構上係巨觀上平面內連續的。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein the magnetic reinforcing layer is at least partially structurally continuous in a superficial plane. 如請求項1至7中任一項所述之磁-介電基材,其中:該磁性加強層係具有平面內磁性各向異性(in-plane magnetic anisotropy)。 The magnetic-dielectric substrate according to any one of claims 1 to 7, wherein the magnetic reinforcing layer has an in-plane magnetic anisotropy. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層係具有界定一第一覆蓋區(footprint)的外部尺寸(outer dimension);該第二介電層係具有界定一大小實質上等於該第一覆蓋區之第二覆蓋區的外部尺寸;以及該磁性加強層係具有界定一大小實質上等於該第一覆蓋 區及該第二覆蓋區之第三覆蓋區的外部尺寸。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein: the first dielectric layer has an outer dimension defining a first footprint; the second The dielectric layer has an outer dimension defining a second footprint that is substantially equal to the first footprint; and the magnetic enhancement layer has a dimension that is substantially equal to the first overlay The outer dimensions of the zone and the third footprint of the second footprint. 如請求項1至7中任一項所述之磁-介電基材,其中:該第一介電層、該第二介電層、及該磁性加強層各自在結構上係平面的。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein the first dielectric layer, the second dielectric layer, and the magnetic reinforcement layer are each structurally planar. 如請求項1至7中任一項所述之磁-介電基材,更包含:一導電接地層(conductive ground layer),設置於該第一介電層之一外表面上;以及一導電元件,設置於該第二介電層之一外表面上,該導電元件係與該導電接地層間隔開。 The magnetic-dielectric substrate according to any one of claims 1 to 7, further comprising: a conductive ground layer disposed on an outer surface of the first dielectric layer; and a conductive And an element disposed on an outer surface of the second dielectric layer, the conductive element being spaced apart from the conductive ground layer. 如請求項20所述之磁-介電基材,其中:該第一介電層具有界定一第一覆蓋區的外部尺寸;該第二介電層具有界定一大小實質上等於該第一覆蓋區之第二覆蓋區的外部尺寸;該磁性加強層具有界定一大小實質上等於該第一覆蓋區及該第二覆蓋區之第三覆蓋區的外部尺寸;該導電接地層具有界定一大小實質上等於該第一覆蓋區之第四覆蓋區的外部尺寸;以及該導電元件具有界定一大小小於該第二覆蓋區之第五覆蓋區的外部尺寸。 The magnetic-dielectric substrate of claim 20, wherein: the first dielectric layer has an outer dimension defining a first footprint; the second dielectric layer has a defined size substantially equal to the first overlay An outer dimension of the second footprint of the region; the magnetic enhancement layer having an outer dimension defining a third footprint substantially equal to the first footprint and the second footprint; the conductive ground layer defining a size substantial An outer dimension equal to a fourth footprint of the first footprint; and the conductive element has an outer dimension defining a fifth footprint that is smaller than the second footprint. 如請求項21所述之磁-介電基材,其中:該第五覆蓋區之面積對該第二覆蓋區之面積之比率係等於或小於0.3。 The magnetic-dielectric substrate of claim 21, wherein the ratio of the area of the fifth footprint to the area of the second footprint is equal to or less than 0.3. 如請求項22所述之磁-介電基材,其中:該導電元件係設置於該第二介電層之中心上。 The magnetic-dielectric substrate of claim 22, wherein the conductive element is disposed on a center of the second dielectric layer. 如請求項20所述之磁-介電基材,更包含:一信號線,經設置與該導電元件信號通信(signal communication)。 The magnetic-dielectric substrate of claim 20, further comprising: a signal line disposed in signal communication with the conductive element. 如請求項24所述之磁-介電基材,其中:該信號線包含一同軸電纜(coaxial cable),該同軸電纜具有一經設置與該導電元件信號通信之中央信號導體(central signal conductor)、及一經設置與該導電接地層電接地通信之接地鞘(ground sheath)。 The magnetic-dielectric substrate of claim 24, wherein the signal line comprises a coaxial cable having a central signal conductor disposed in signal communication with the conductive element, And a ground sheath that is in electrical communication with the conductive ground plane. 如請求項24中任一項所述之磁-介電基材,其中:該導電元件係經圖案化以形成線內(in-line)及平面內導電不連續性(conductive discontinuity)。 A magnetic-dielectric substrate according to any of the preceding claims, wherein the conductive element is patterned to form in-line and in-plane conductive discontinuities. 如請求項26所述之磁-介電基材,其中:當一1吉赫(GHz)信號經由該信號線通信至該導電元件時,該磁-介電基材係經構形並能夠將該1吉赫信號在H場平面(H-field plane)中以至少122度之波束寬度(beam width)輻射至自由空間(free space)中,以及能夠將該1吉赫信號在E場平面(E-field plane)中以至少116度之波束寬度輻射至自由空間中。 The magnetic-dielectric substrate of claim 26, wherein when a 1 GHz signal is communicated to the conductive element via the signal line, the magnetic-dielectric substrate is configured and capable of The 1 GHz signal is radiated into the free space with a beam width of at least 122 degrees in the H-field plane, and the 1 GHz signal can be placed in the E-field ( The E-field plane radiates into the free space with a beamwidth of at least 116 degrees. 如請求項1至7中任一項所述之磁-介電基材,其中:該第二介電層與該第一介電層係均勻地間隔開。 The magnetic-dielectric substrate of any one of claims 1 to 7, wherein the second dielectric layer is evenly spaced from the first dielectric layer. 如請求項24所述之磁-介電基材,其中:該導電接地層及該導電元件係為形成一銅包層電路積層板(copper clad circuit laminate)之積層板;以及當一1吉赫信號經由該信號線通信至該導電元件時,該磁-介電基材係經構形並能夠將該1吉赫信號在H場平面中以至少122度之波束寬度輻射至自由空間,以及能夠將該1吉赫信號在E場平面中以至少116度之波束寬度輻射至自由空間中。 The magnetic-dielectric substrate of claim 24, wherein: the conductive ground layer and the conductive element are a laminate forming a copper clad circuit laminate; and when a 1 GHz When the signal is communicated to the conductive element via the signal line, the magnetic-dielectric substrate is configured and capable of radiating the 1 GHz signal to free space in a H field plane with a beamwidth of at least 122 degrees, and capable of The 1 GHz signal is radiated into the free space in an E field plane with a beamwidth of at least 116 degrees.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107818999A (en) * 2016-09-13 2018-03-20 瑞萨电子株式会社 The manufacture method and semiconductor device of semiconductor device
US20210032121A1 (en) * 2019-07-30 2021-02-04 Rogers Corporation Multiphase ferrites and composites comprising the same
TWI773882B (en) * 2018-02-23 2022-08-11 美商羅傑斯公司 Hexaferrite composites, article comprising the same and method of forming a sheet comprising the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107818999A (en) * 2016-09-13 2018-03-20 瑞萨电子株式会社 The manufacture method and semiconductor device of semiconductor device
TWI773882B (en) * 2018-02-23 2022-08-11 美商羅傑斯公司 Hexaferrite composites, article comprising the same and method of forming a sheet comprising the same
US20210032121A1 (en) * 2019-07-30 2021-02-04 Rogers Corporation Multiphase ferrites and composites comprising the same
US11679991B2 (en) * 2019-07-30 2023-06-20 Rogers Corporation Multiphase ferrites and composites comprising the same

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