TW201625774A - Phosphor, light emitting device, illumination device and image display device - Google Patents

Phosphor, light emitting device, illumination device and image display device Download PDF

Info

Publication number
TW201625774A
TW201625774A TW104137350A TW104137350A TW201625774A TW 201625774 A TW201625774 A TW 201625774A TW 104137350 A TW104137350 A TW 104137350A TW 104137350 A TW104137350 A TW 104137350A TW 201625774 A TW201625774 A TW 201625774A
Authority
TW
Taiwan
Prior art keywords
phosphor
light
emitting device
present
less
Prior art date
Application number
TW104137350A
Other languages
Chinese (zh)
Inventor
吉村文孝
山根久典
Original Assignee
三菱化學股份有限公司
國立大學法人東北大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱化學股份有限公司, 國立大學法人東北大學 filed Critical 三菱化學股份有限公司
Publication of TW201625774A publication Critical patent/TW201625774A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements

Abstract

To provide a novel phosphor, which is effectively used for LED, having a narrow full-width at half-maximum of an emission spectrum and having a different crystal structure from those of conventional phosphors. The phosphor comprising an element M, an element A, Al, Si and N and comprising a monoclinic crystalline phase, Wherein each lattice constant of the crystalline phase satisfies in the axis a, 7.7 Å ≤ a ≤ 8.51 Å in the axis b, 8.64 Å ≤ b ≤ 9.55 Å, in the axis c, 8.53 Å ≤ c ≤ 9.43 Å, in the angle [beta], 97.6 DEG ≤ [beta] ≤ 115.6 DEG. (wherein the element M represents one or more kinds selected from activation elements and the element A represents one or more kinds selected from alkali earth metal elements).

Description

螢光體、發光裝置、照明裝置及影像顯示裝置 Phosphor, illuminating device, illuminating device and image display device

本發明係關於一種螢光體、發光裝置、照明裝置、及影像顯示裝置。 The present invention relates to a phosphor, a light-emitting device, a lighting device, and an image display device.

近年來,受到節能之趨勢,使用發光二極體(LED,Light Emitting Diode)作為照明或背光源之需求不斷增加。此處所使用之LED係於發出藍或近紫外波長之光之LED晶片上配置有螢光體之白色發光LED。作為此種類型之白色發光LED,近年來使用如下者:於藍色LED晶片上,使用將來自藍色LED晶片之藍色光作為激發光而發出紅色光之氮化物螢光體及發出綠色光之螢光體。尤其是於顯示器用途中,於該等藍色、綠色及紅色之3色中,綠色對人眼之可見度特別高,大大有助於顯示器之整體明亮度,因此與其他兩色相比特別重要,期望開發出發光特性優異之綠色螢光體。作為發出綠色光之螢光體,例如作為寬頻帶螢光體,開發有以Ba3Si6O12N2:Eu,Ce之組成式表示之複合氮氧化物等(專利文獻1)。 In recent years, due to the trend of energy saving, the demand for using LEDs (Light Emitting Diodes) as illumination or backlights has been increasing. The LED used herein is a white light-emitting LED in which a phosphor is disposed on an LED chip emitting light of blue or near-ultraviolet wavelength. As a white light-emitting LED of this type, in recent years, a nitride phosphor that emits red light by using blue light from a blue LED chip as excitation light and green light is used. Fluorescent body. Especially in the display application, among the three colors of blue, green and red, the visibility of the green to the human eye is particularly high, which greatly contributes to the overall brightness of the display, and therefore is particularly important compared with the other two colors. Developed a green phosphor with excellent luminescence properties. As a phosphor that emits green light, for example, a composite oxynitride represented by a composition formula of Ba 3 Si 6 O 12 N 2 :Eu,Ce has been developed as a broadband-based phosphor (Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2007/088966號公報 [Patent Document 1] International Publication No. 2007/088966

如上所述已開發有各種螢光體,但例如於顯示器用途中、就演色性之觀點而言等,期望發光光譜之半值寬較窄之螢光體。本發明鑒於上述問題,提供一種新穎之螢光體,其發光光譜之半值寬較窄,具有與習知之螢光體不同之結晶構造,可有效地用於LED用途。 Although various types of phosphors have been developed as described above, for example, in the case of display applications, in view of color rendering properties, a phosphor having a narrow half-value width of an emission spectrum is desired. The present invention has been made in view of the above problems, and provides a novel phosphor having a narrow half-value width of an emission spectrum and having a crystal structure different from that of a conventional phosphor, and can be effectively used for LED applications.

本發明者等鑒於上述問題,對螢光體之新穎探索進行了努力研究,結果想到具有與習知之螢光體不同之結晶構造且可有效地用於LED用途之新穎之螢光體,從而完成本發明。本發明如下所述。 In view of the above problems, the inventors of the present invention have diligently studied the novel exploration of phosphors, and as a result, it has been conceived to have a novel phosphor having a crystal structure different from that of a conventional phosphor and which can be effectively used for LED applications. this invention. The invention is as follows.

<1>一種螢光體,其係包含含有M元素、A元素、Al、Si、N等單斜晶之結晶相者;其特徵在於:該結晶相之晶格常數分別滿足a軸為7.7Å≦a≦8.51Å,b軸為8.64Å≦b≦9.55Å,c軸為8.53Å≦c≦9.43Å,β角為97.6°≦β≦115.6°,(其中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素)。 <1> A phosphor comprising a crystal phase containing monoclinic crystals such as M element, A element, Al, Si, N, etc.; wherein a lattice constant of the crystal phase satisfies an a-axis of 7.7 Å, respectively. ≦a≦8.51Å, the b-axis is 8.64 Åb≦9.55Å, the c-axis is 8.53 Åc≦9.43Å, and the β angle is 97.6°≦β≦115.6°, (wherein the M element is selected from the activating element) One or more elements, and the A element means one or more elements selected from the group consisting of alkaline earth metal elements).

<2>如<1>所記載之螢光體,其中,上述結晶相具有下述式[1]所 表示之組成,MmAaAlbSicNd [1](上述式[1]中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素,m、a、b、c、d分別獨立為滿足下述式之值,0<m≦0.2 m+a=1 0.8≦b≦1.2 3.2≦c≦4.8 5.6≦d≦8.4)。 The phosphor described in the above [1], wherein the crystal phase has a composition represented by the following formula [1], and M m A a Al b Si c N d [1] (the above formula [1] In the above, the M element represents one or more elements selected from the group consisting of active elements, and the A element represents one or more elements selected from the group consisting of alkaline earth elements, and m, a, b, c, and d are each independently satisfying the following formula. Value, 0 < m ≦ 0.2 m + a = 1 0.8 ≦ b ≦ 1.2 3.2 ≦ c ≦ 4.8 5.6 ≦ d ≦ 8.4).

<3>如<1>或<2>所記載之螢光體,其中,A元素包含Ca及/或Sr。 <3> The phosphor described in <1> or <2>, wherein the A element contains Ca and/or Sr.

<4>如<1>至<3>中任一項所記載之螢光體,其中,M元素包含Eu。 The phosphor described in any one of <1> to <3> wherein the M element contains Eu.

<5>如<1>至<4>中任一項所記載之螢光體,其藉由照射介於350nm以上且460nm以下之波長之激發光,而於500nm以上且560nm以下之範圍內具有發光波峰波長。 The phosphor described in any one of <1> to <4> which has excitation light having a wavelength of 350 nm or more and 460 nm or less, and has a range of 500 nm or more and 560 nm or less. Luminous peak wavelength.

<6>一種發光裝置,其特徵在於,其具備第1發光體,及藉由來自該第1發光體之光之照射而發出可見光之第2發光體,且該第2發 光體包含<1>至<5>中任一項所記載之螢光體。 <6> A light-emitting device comprising: a first light-emitting body; and a second light-emitting body that emits visible light by irradiation of light from the first light-emitting body, wherein the second light-emitting body The phosphor includes the phosphor described in any one of <1> to <5>.

<7>一種照明裝置,其特徵在於,其具備<6>所記載之發光裝置作為光源。 <7> A lighting device comprising the light-emitting device described in <6> as a light source.

<8>一種影像顯示裝置,其特徵在於,其具備<6>所記載之發光裝置作為光源。 <8> An image display device comprising the light-emitting device described in <6> as a light source.

本發明之新穎螢光體其發光光譜之半值寬較窄,具有與習知之螢光體不同之結晶構造,可有效地用於LED用途。因此,使用本發明之新穎螢光體的發光裝置其演色性優異。進而,包含本發明之發光裝置的照明裝置及影像顯示裝置具高品質。 The novel phosphor of the present invention has a narrow half-value width of an emission spectrum and has a crystal structure different from that of a conventional phosphor, and can be effectively used for LED applications. Therefore, the light-emitting device using the novel phosphor of the present invention is excellent in color rendering property. Further, the illumination device and the image display device including the light-emitting device of the present invention have high quality.

圖1係表示實施例1中所獲得之螢光體之粉末X射線繞射(XRD,X ray diffraction)圖案的圖。 Fig. 1 is a view showing a powder X-ray diffraction (XRD) pattern of the phosphor obtained in Example 1.

圖2係實施例1中所獲得之螢光體利用掃描型電子顯微鏡所得的影像(圖式代用照片)。 2 is an image obtained by using a scanning electron microscope (photograph of a substitute image) of the phosphor obtained in Example 1. FIG.

圖3係表示實施例1中所獲得之螢光體之電子探針顯微分析(EPMA,electron probe micro analysis)測定結果的圖。再者,C峰係因塗層所產生者。 Fig. 3 is a graph showing the results of measurement by electron probe micro analysis (EPMA) of the phosphor obtained in Example 1. Furthermore, the C peak is due to the coating.

圖4係表示實施例1中所獲得之螢光體藉由模擬所獲得之XRD圖案及藉由透過法所獲得之粉末X射線繞射圖案的圖。 4 is a view showing an XRD pattern obtained by simulation of the phosphor obtained in Example 1 and a powder X-ray diffraction pattern obtained by a transmission method.

圖5係表示實施例1中所獲得之螢光體之激發-發光光譜的 圖。虛線表示激發光譜,實線表示發光光譜。 Figure 5 is a graph showing the excitation-luminescence spectrum of the phosphor obtained in Example 1. Figure. The dotted line indicates the excitation spectrum, and the solid line indicates the luminescence spectrum.

圖6係表示實施例1中所獲得之螢光體及比較例1之螢光體之溫度特性(將25℃下之發光波峰強度設為100%時之相對強度)的圖。 Fig. 6 is a graph showing the temperature characteristics (relative intensity when the luminescence peak intensity at 25 ° C is 100%) of the phosphor obtained in Example 1 and the phosphor of Comparative Example 1.

圖7係表示實施例2、4中所獲得之螢光體之XRD圖案的圖。 Fig. 7 is a view showing the XRD pattern of the phosphor obtained in Examples 2 and 4.

圖8係表示實施例2~4中所獲得之螢光體之發光光譜的圖。 Fig. 8 is a graph showing the luminescence spectra of the phosphors obtained in Examples 2 to 4.

圖9係表示實施例5中所獲得之螢光體之XRD圖案的圖。 Fig. 9 is a view showing the XRD pattern of the phosphor obtained in Example 5.

圖10係表示實施例5中所獲得之螢光體之發光光譜的圖。 Fig. 10 is a view showing the luminescence spectrum of the phosphor obtained in Example 5.

圖11係表示實施例7中所獲得之螢光體之XRD圖案的圖。 Fig. 11 is a view showing the XRD pattern of the phosphor obtained in Example 7.

圖12係表示實施例7、8中所獲得之螢光體之發光光譜的圖。 Fig. 12 is a view showing the luminescence spectra of the phosphors obtained in Examples 7 and 8.

圖13係於實施例10之發光裝置中藉由模擬所算出之發光光譜圖。 Fig. 13 is a luminescence spectrum calculated by simulation in the light-emitting device of Example 10.

圖14係於實施例11之發光裝置中藉由模擬所算出之發光光譜圖。 Fig. 14 is a chart showing the luminescence spectrum calculated by simulation in the light-emitting device of Example 11.

圖15係於實施例12之發光裝置中藉由模擬所算出之發光光譜圖。 Fig. 15 is a luminescence spectrum calculated by simulation in the light-emitting device of Example 12.

圖16係於實施例13之發光裝置中藉由模擬所算出之發光光譜圖。 Fig. 16 is a luminescence spectrum calculated by simulation in the light-emitting device of Example 13.

圖17係於實施例13之發光裝置中藉由模擬所算出之色度範圍。 Fig. 17 is a chromaticity range calculated by simulation in the light-emitting device of the thirteenth embodiment.

圖18係於實施例14之發光裝置中藉由模擬所算出之發光光譜圖。 Fig. 18 is a luminescence spectrum calculated by simulation in the light-emitting device of Example 14.

圖19係於實施例14之發光裝置中藉由模擬所算出之色度範圍。 Fig. 19 is a chromaticity range calculated by simulation in the light-emitting device of the fourteenth embodiment.

以下,例示實施形態或例示物對本發明進行說明,但本發明並不限定於以下之實施形態或例示物等,可於不脫離本發明之主旨之範圍內任意進行變化而實施。再者,於本說明書中使用「~」所表示之數值範圍意指包含於「~」之前後所記載之數值作為下限值及上限值之範圍。又,於本說明書中之螢光體之組成式中,各組成式之分隔係以頓號(、)隔開而表示。又,於以逗號(,)隔開而列記數個元素之情形時,表示可以任意組合及組成含有所列記之元素中之一種或兩種以上。例如「(Ca,Sr,Ba)Al2O4:Eu」之組成式視為概括性地表示以下全部:「CaAl2O4:Eu」、「SrAl2O4:Eu」、「BaAl2O4:Eu」、「Ca1-xSrxAl2O4:Eu」、「Sr1-xBaxAl2O4:Eu」、「Ca1-xBaxAl2O4:Eu」、及「Ca1-x-ySrxBayAl2O4:Eu」(其中,式中,0<x<1,0<y<1,0<x+y<1)。 In the following, the present invention is not limited to the embodiments and the examples, and the present invention is not limited to the embodiments described below, and the invention can be carried out without departing from the spirit and scope of the invention. In addition, the numerical range represented by the "~" in this specification means the numerical value contained in the before and after "~" as a range of a lower limit and an upper limit. Further, in the composition formula of the phosphor in the present specification, the division of each composition formula is represented by a dot (,). Further, when a plurality of elements are arranged by a comma (,), it is indicated that one or two or more elements including the listed elements can be arbitrarily combined and composed. For example, the composition formula of "(Ca,Sr,Ba)Al 2 O 4 :Eu" is considered to generally represent the following: "CaAl 2 O 4 :Eu", "SrAl 2 O 4 :Eu", "BaAl 2 O 4 :Eu", "Ca 1-x Sr x Al 2 O 4 :Eu", "Sr 1-x Ba x Al 2 O 4 :Eu", "Ca 1-x Ba x Al 2 O 4 :Eu", And "Ca 1-xy Sr x Ba y Al 2 O 4 :Eu" (wherein, where 0 < x < 1, 0 < y < 1, 0 < x + y < 1).

本發明包含作為第一實施態樣之螢光體、作為第二實施態樣之發光裝置、作為第三實施態樣之照明裝置、作為第四實施態樣之影像顯示裝置。 The present invention includes a phosphor as a first embodiment, a light-emitting device as a second embodiment, an illumination device as a third embodiment, and a video display device as a fourth embodiment.

<關於螢光體> <About phosphor>

本發明之第一實施態樣之螢光體係包含含有M元素、A元素、Al、Si、N等單斜晶之結晶相者,並且該結晶相之晶格常數分別滿足a軸為7.7Å≦a≦8.51Å,b軸為8.64Å≦b≦9.55Å,c軸為8.53Å≦c≦9.43Å,β角為97.6°≦β≦115.6°。其中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素。 The fluorescent system according to the first embodiment of the present invention comprises a crystal phase containing monoclinic crystals such as M element, A element, Al, Si, N, etc., and the lattice constant of the crystal phase satisfies the a-axis of 7.7 Å, respectively. a ≦ 8.51 Å, the b-axis is 8.64 Å ≦ b ≦ 9.55 Å, the c-axis is 8.53 Å ≦ c ≦ 9.43 Å, and the β angle is 97.6 ° ≦ β ≦ 115.6 °. In the above, the M element represents one or more elements selected from the group consisting of active elements, and the A element represents one or more elements selected from the group consisting of alkaline earth metal elements.

M元素表示選自由銪(Eu)、錳(Mn)、鈰(Ce)、鐠(Pr)、 釹(Nd)、釤(Sm)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)及鐿(Yb)所組成群組中之1種以上之元素。M較佳為至少包含Eu,更佳為Eu。 The M element is selected from the group consisting of Eu (Eu), Manganese (Mn), Ce (Ce), and Pr (Pr). One or more elements selected from the group consisting of Nd, Sm, Tb, Dy, Ho, Er, Tm, and Yb . M preferably contains at least Eu, more preferably Eu.

進而,Eu亦可將其全部或一部分利用選自由Ce、Pr、Sm、Tb及Yb所組成群組中之至少1種元素進行置換,就發光量子效率之方面而言,更佳為Ce。即,M進而較佳為Eu及/或Ce,更佳為Eu。 Further, Eu may be replaced by at least one element selected from the group consisting of Ce, Pr, Sm, Tb, and Yb, and is more preferably Ce in terms of luminescence quantum efficiency. That is, M is further preferably Eu and/or Ce, and more preferably Eu.

Eu相對於賦活元素整體之比率較佳為50莫耳%以上,更佳為70莫耳%以上,尤佳為90莫耳%以上。 The ratio of Eu to the entire active element is preferably 50 mol% or more, more preferably 70 mol% or more, and particularly preferably 90 mol% or more.

A元素表示選自鹼土金屬元素中之1種以上之元素。作為鹼土金屬元素,較佳為鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba),進而較佳為Ca、Sr、Ba,更佳為Ca及/或Sr,尤佳為Sr。該等元素亦可利用其他二價金屬,例如鋅(Zn),置換一部分。該等元素亦可利用稀土元素置換一部分。作為置換之稀土元素,較佳為鑭(La)、釔(Y)、鎦(Lu),更佳為鑭(La)、釔(Y),尤佳為鑭(La)。 The A element represents one or more elements selected from the group consisting of alkaline earth metal elements. The alkaline earth metal element is preferably magnesium (Mg), calcium (Ca), strontium (Sr) or barium (Ba), further preferably Ca, Sr, Ba, more preferably Ca and/or Sr, and particularly preferably Sr. These elements may also be replaced with other divalent metals, such as zinc (Zn). These elements may also be replaced with a rare earth element. The rare earth element to be substituted is preferably lanthanum (La), yttrium (Y) or lanthanum (Lu), more preferably lanthanum (La) or yttrium (Y), and particularly preferably lanthanum (La).

Al表示鋁。Al亦可利用化學上類似之其他三價元素、例如硼(B)、鎵(Ga)、銦(In)、鈧(Sc)、釔(Y)、鑭(La)、釓(Gd)、鎦(Lu)等置換一部分。 Al represents aluminum. Al can also utilize other trivalent elements that are chemically similar, such as boron (B), gallium (Ga), indium (In), strontium (Sc), ytterbium (Y), lanthanum (La), yttrium (Gd), yttrium. Part of the replacement of (Lu).

Si表示矽。Si亦可利用化學上類似之其他四價元素、例如鍺(Ge)、錫(Sn)、鈦(Ti)、鋯(Zr)、鉿(Hf)等置換一部分。 Si means 矽. Si may also be substituted with a chemically similar other tetravalent element such as germanium (Ge), tin (Sn), titanium (Ti), zirconium (Zr), hafnium (Hf) or the like.

式(1)中,N表示氮元素。N亦可利用其他元素、例如氧(O)、鹵素原子(氟(F)、氯(Cl)、溴(Br)、碘(I))等置換一部分。 In the formula (1), N represents a nitrogen element. N may be substituted with a part of other elements such as oxygen (O), a halogen atom (fluorine (F), chlorine (Cl), bromine (Br), iodine (I)).

再者,關於氧,可想到以原料金屬中之雜質形式混入之情形、於粉碎步驟、氮化步驟等製造製程時被導入之情形等,於 本實施態樣之螢光體中係不可避免之混入者。又,於包含鹵素原子之情形,可想到以原料金屬中之雜質形式混入,或於粉碎步驟、氮化步驟等製造製程時被導入之情形等,尤其於使用鹵化物作為助焊劑之情形時,有包含於螢光體中之情形。 Further, as for oxygen, it is conceivable that it is mixed as an impurity in the raw material metal, when it is introduced in a manufacturing process such as a pulverization step, a nitridation step, or the like, In the phosphor of this embodiment, it is an inevitable incorporation. Further, in the case where a halogen atom is contained, it is conceivable to be mixed as an impurity in the raw material metal, or introduced in a manufacturing process such as a pulverization step or a nitridation step, and the like, particularly in the case where a halide is used as a flux. There are cases included in the phosphor.

本發明之第一實施態樣之螢光體較佳為於上述螢光體中,其結晶相具有下述式[1]所表示之組成。 The phosphor of the first embodiment of the present invention is preferably one of the above-mentioned phosphors, and the crystal phase thereof has a composition represented by the following formula [1].

MmAaAlbSicNd [1] M m A a Al b Si c N d [1]

(上述式[1]中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素,m、a、b、c、d分別獨立為滿足下述式之值;0<m≦0.2 (In the above formula [1], the M element represents one or more elements selected from the group consisting of active elements, and the A element represents one or more elements selected from the group consisting of alkaline earth elements, and m, a, b, c, and d are independent. To satisfy the value of the following formula; 0<m≦0.2

m+a=1 m+a=1

0.8≦b≦1.2 0.8≦b≦1.2

3.2≦c≦4.8 3.2≦c≦4.8

5.6≦d≦8.4) 5.6≦d≦8.4)

式[1]中之M元素、A元素、Al、Si、N之態樣及較佳態樣如上所述。 The aspects of the M element, the A element, the Al, Si, N in the formula [1] and preferred aspects are as described above.

m表示賦活元素M之含量,其範圍通常為0<m≦0.2,下限值較佳為0.001,更佳為0.02,又,其上限值較佳為0.15,進而較佳為0.1,尤佳為0.08。 m represents the content of the activating element M, and the range thereof is usually 0 < m ≦ 0.2, the lower limit value is preferably 0.001, more preferably 0.02, and the upper limit thereof is preferably 0.15, more preferably 0.1, particularly preferably Is 0.08.

a表示A元素之含量。m與a相互之關係通常滿足m+a=1。 a represents the content of the A element. The relationship between m and a usually satisfies m+a=1.

b表示Al之含量,其範圍通常為0.8≦b≦1.2,下限 值較佳為0.9,又,上限值較佳為1.1。 b represents the content of Al, and its range is usually 0.8≦b≦1.2, the lower limit The value is preferably 0.9, and the upper limit is preferably 1.1.

c表示Si之含量,其範圍通常為3.2≦c≦4.8,下限值較佳為3.6,更佳為3.8,又,上限值較佳為4.4,更佳為4.2。 c represents the content of Si, and the range thereof is usually 3.2 ≦ c ≦ 4.8, the lower limit value is preferably 3.6, more preferably 3.8, and the upper limit value is preferably 4.4, more preferably 4.2.

d表示N之含量,其範圍通常為5.6≦d≦8.4,下限值較佳為6,更佳為6.3,又,上限值較佳為8,更佳為7.7。 d represents the content of N, and the range thereof is usually 5.6 ≦ d ≦ 8.4, the lower limit value is preferably 6, more preferably 6.3, and the upper limit value is preferably 8, more preferably 7.7.

若任一者之含量均為上述範圍,則就所獲得之螢光體之發光特性、尤其是具良好發光亮度之方面而言較佳。 If the content of any of the above ranges is in the above range, it is preferable in terms of the light-emitting characteristics of the obtained phosphor, particularly in terms of good light-emitting luminance.

本實施態樣之螢光體即便於混入氧之情形時,亦可藉由將結晶構造內之Si-N一部分置換為Al-O,而維持其結晶構造。即,認為只要在上述範圍內,則依舊保持其結晶構造。 In the case where the phosphor of the present embodiment is mixed with oxygen, the crystal structure can be maintained by replacing a part of Si-N in the crystal structure with Al-O. That is, it is considered that as long as it is within the above range, the crystal structure is maintained.

<關於螢光體之物性> <About physical properties of phosphors> [發光色] [light color]

本實施態樣之螢光體之發光色可藉由調整化學組成等,而利用波長300nm~500nm等近紫外區域~藍色區域之光進行激發,從而設為藍色、藍綠色、綠色、黃綠色、黃色、橙色、紅色等所需之發光色。 The luminescent color of the phosphor of the present embodiment can be excited by light of a near-ultraviolet region to a blue region having a wavelength of 300 nm to 500 nm by adjusting a chemical composition or the like, thereby setting blue, cyan, green, and yellow. Green, yellow, orange, red, etc.

[發光光譜] [luminescence spectrum]

本實施態樣之螢光體在利用350nm以上且460nm以下之波長(尤其是波長400nm或450nm)之光進行激發之情況下測定發光光譜之情形時,具有以下之特性為較佳。本實施態樣之螢光體,其上述發光光譜中之波峰波長通常為500nm以上,較佳為510nm以上,更佳為520nm以上。又,通常為560nm以下,較佳為550nm 以下,更佳為545nm以下。若為上述範圍內,則所獲得之螢光體呈現出良好之綠色,故而較佳。 When the phosphor of the present embodiment is used to measure the luminescence spectrum when excited by light having a wavelength of 350 nm or more and 460 nm or less (especially, a wavelength of 400 nm or 450 nm), the following characteristics are preferable. In the phosphor of the present embodiment, the peak wavelength in the above-mentioned luminescence spectrum is usually 500 nm or more, preferably 510 nm or more, and more preferably 520 nm or more. Further, it is usually 560 nm or less, preferably 550 nm. Hereinafter, it is more preferably 545 nm or less. If it is within the above range, the obtained phosphor exhibits a good green color, and thus is preferable.

[發光光譜之半值寬] [half-value width of luminescence spectrum]

本實施態樣之螢光體,其上述發光光譜中之發光波峰之半值寬通常為90nm以下,較佳為80nm以下,更佳為70nm以下,又,通常為30nm以上,更佳為40nm以上。即,本實施態樣中之所謂「半值寬較窄之螢光體」,意指發光波峰之半值寬為90nm以下之螢光體。藉由設為上述範圍內,可於使用在液晶顯示器等影像顯示裝置之情形時不使色純度降低而擴大影像顯示裝置之色再現範圍。 In the phosphor of the present embodiment, the half value width of the luminescence peak in the luminescence spectrum is usually 90 nm or less, preferably 80 nm or less, more preferably 70 nm or less, and usually 30 nm or more, more preferably 40 nm or more. . In other words, the "fluorescent body having a narrower half-value width" in the present embodiment means a phosphor having a half-value width of a light-emitting peak of 90 nm or less. By setting it as the said range, the color reproduction range of a video display device can be enlarged, when it is used in the image display apparatus, such as a liquid-

再者,可利用波長400nm之光激發本實施態樣之螢光體,例如可使用GaN系LED。又,本實施態樣之螢光體之發光光譜之測定,以及其發光波峰波長、波峰相對強度及波峰半值寬之算出例如可使用150W氙氣燈作為激發光源,使用具備多通道電荷耦合元件(CCD,Charge Coupled Device)檢測器C7041(Hamamatsu Photonics公司製造)之螢光測定裝置(日本分光公司製造)作為光譜測定裝置而進行。 Further, the phosphor of the present embodiment can be excited by light having a wavelength of 400 nm, and for example, a GaN-based LED can be used. Further, in the measurement of the luminescence spectrum of the phosphor of the present embodiment, and the calculation of the luminescence peak wavelength, the peak relative intensity, and the peak half value width, for example, a 150 W xenon lamp can be used as the excitation light source, and a multi-channel charge coupled device can be used. CCD, Charge Coupled Device) A fluorescence measuring device (manufactured by JASCO Corporation) manufactured by Detector C7041 (manufactured by Hamamatsu Photonics Co., Ltd.) was used as a spectrometer.

[溫度特性(發光強度維持率)] [Temperature characteristics (luminous intensity maintenance rate)]

本實施態樣之螢光體,其溫度特性亦優異。具體而言,照射450nm之波長之光之情形時,200℃下之發光光譜圖中之發光波峰強度值相對於25℃下之發光光譜圖中之發光波峰強度值之比率通常為50%以上,較佳為60%以上,尤佳為70%以上。又,由於通常之螢光體隨著溫度上升而發光強度降低,故而難以認為該比率會超過 100%,但亦可有因某些原因而超過100%之情形。但是,若要超過100%,則有因溫度變化而引起色偏之傾向。再者,於測定上述溫度特性之情形時,只要按照常法即可,例如可列舉日本專利特開2008-138156號公報中所記載之方法等。 The phosphor of this embodiment is also excellent in temperature characteristics. Specifically, when light having a wavelength of 450 nm is irradiated, the ratio of the luminescence peak intensity value in the luminescence spectrum at 200 ° C to the luminescence peak intensity value in the luminescence spectrum at 25 ° C is usually 50% or more. It is preferably 60% or more, and particularly preferably 70% or more. Moreover, since the normal phosphor decreases in temperature as the temperature rises, it is difficult to think that the ratio will exceed 100%, but there may be more than 100% for some reasons. However, if it exceeds 100%, there is a tendency for color shift due to temperature change. In the case of measuring the temperature characteristics, the method described in JP-A-2008-138156 can be used.

[激發波長] [excitation wavelength]

本實施態樣之螢光體通常於300nm以上、較佳為350nm以上、更佳為400nm以上、又,通常500nm以下、較佳為480nm以下、更佳為460nm以下、尤佳為450nm以下之波長範圍內具有激發波峰。即,可利用近紫外至藍色區域之光進行激發。 The phosphor of the present embodiment is usually 300 nm or more, preferably 350 nm or more, more preferably 400 nm or more, and usually 500 nm or less, preferably 480 nm or less, more preferably 460 nm or less, and particularly preferably 450 nm or less. There are excitation peaks in the range. That is, excitation can be performed using light in the near ultraviolet to blue region.

[國際照明委員會(CIE,Commission Internationale de L'Eclairage)色度座標] [CIE, Commission Internationale de L'Eclairage Chroma Coordinates]

本實施態樣之螢光體的CIE色度座標之x值通常為0.275以上,較佳為0.300以上,更佳為0.320以上,進而較佳為0.340以上,且通常為0.425以下,較佳為0.400以下,更佳為0.380以下,進而較佳為0.360以下。又,本實施態樣之螢光體的CIE色度座標之y值通常為0.550以上,較佳為0.575以上,且通常為0.675以下,較佳為0.650以下,更佳為0.625以下。藉由使CIE色度座標為上述範圍內,於將藍色LED及其他黃色螢光體或紅色螢光體組合而使用時,可獲得演色性良好之發光色、較佳為白色~燈泡色之發光顯示之發光裝置。 The value of the CIE chromaticity coordinate of the phosphor of the present embodiment is usually 0.275 or more, preferably 0.300 or more, more preferably 0.320 or more, still more preferably 0.340 or more, and usually 0.425 or less, preferably 0.400. Hereinafter, it is more preferably 0.380 or less, further preferably 0.360 or less. Further, the y value of the CIE chromaticity coordinates of the phosphor of the present embodiment is usually 0.550 or more, preferably 0.575 or more, and usually 0.675 or less, preferably 0.650 or less, more preferably 0.625 or less. By using the CIE chromaticity coordinate within the above range, when a blue LED and another yellow phosphor or a red phosphor are used in combination, a luminescent color having a good color rendering property, preferably a white color to a light bulb color, can be obtained. A light-emitting device that emits light.

[量子效率] [quantum efficiency]

本實施形態之螢光體之外部量子效率(ηo)通常為40%以上,較佳為45%以上,進而較佳為50%以上,尤佳為55%以上。外部量子效率越高則發光效率越高,故而較佳。本實施形態之螢光體之內部量子效率(ηi)通常為60%以上,較佳為65%以上,進而較佳為70%以上,進而較佳為75%以上,尤佳為80%以上。內部量子效率意指發光之光子數相對於螢光體所吸收之激發光之光子數之比率。因此,內部量子效率越高,發光效率或發光強度便越高,故而較佳。 The external quantum efficiency (η o ) of the phosphor of the present embodiment is usually 40% or more, preferably 45% or more, more preferably 50% or more, and still more preferably 55% or more. The higher the external quantum efficiency, the higher the luminous efficiency, and thus it is preferable. The internal quantum efficiency (η i ) of the phosphor of the present embodiment is usually 60% or more, preferably 65% or more, more preferably 70% or more, still more preferably 75% or more, and particularly preferably 80% or more. . Internal quantum efficiency means the ratio of the number of photons emitted to the photon number of the excitation light absorbed by the phosphor. Therefore, the higher the internal quantum efficiency, the higher the luminous efficiency or the luminous intensity, and thus it is preferable.

[晶格常數] [lattice constant]

本實施態樣之螢光體之晶格常數係根據構成結晶之元素之種類而變化,關於晶格常數a、b、c,分別為下述範圍。a軸通常為7.7Å以上且8.51Å以下之範圍,下限值較佳為7.86Å,更佳為8.02Å,又,上限值較佳為8.35Å,更佳為8.18Å。b軸通常為8.64Å以上且9.55Å以下之範圍,下限值較佳為8.82Å,更佳為9Å,又,上限值較佳為9.37Å,更佳為9.18Å。c軸通常為8.53Å以上且9.43Å以下之範圍,下限值較佳為8.71Å,更佳為8.89Å,又,上限值較佳為9.25Å,更佳為9.07Å。 The lattice constant of the phosphor of the present embodiment varies depending on the type of the element constituting the crystal, and the lattice constants a, b, and c each have the following ranges. The a-axis is usually in the range of 7.7 Å or more and 8.51 Å or less, and the lower limit is preferably 7.86 Å, more preferably 8.02 Å, and the upper limit is preferably 8.35 Å, more preferably 8.18 Å. The b-axis is usually in the range of 8.64 Å or more and 9.55 Å or less, and the lower limit is preferably 8.82 Å, more preferably 9 Å, and the upper limit is preferably 9.37 Å, more preferably 9.18 Å. The c-axis is usually in the range of 8.53 Å or more and 9.43 Å or less, and the lower limit is preferably 8.71 Å, more preferably 8.89 Å, and the upper limit is preferably 9.25 Å, more preferably 9.07 Å.

又,a軸相對於c軸之比率(a/c)較佳為0.85以上,更佳為0.88以上,又,較佳為0.96以下,更佳為0.92以下。 Further, the ratio (a/c) of the a-axis to the c-axis is preferably 0.85 or more, more preferably 0.88 or more, still more preferably 0.96 or less, still more preferably 0.92 or less.

β角為97.6°以上且115.6°以下之範圍,下限值較佳為99.6°,更佳為106.02°,上限值較佳為113.6°,更佳為112.16°。 The β angle is in the range of 97.6° or more and 115.6° or less, and the lower limit is preferably 99.6°, more preferably 106.02°, and the upper limit is preferably 113.6°, more preferably 112.16°.

再者,若任一情形均在上述範圍內,則穩定地產生本實施態樣之螢光體,且抑制雜質相之產生,因此所獲得之螢光體之發光亮度良好。 In addition, in any case, the phosphor of the present embodiment is stably produced, and the generation of the impurity phase is suppressed, so that the luminance of the obtained phosphor is good.

[單位晶格體積] [unit lattice volume]

本實施態樣之螢光體之由晶格常數所算出之單位晶格體積(V)較佳為522.9Å3以上,更佳為553.6Å3以上,進而較佳為612.0Å3以上,又,較佳為707.4Å3以下,更佳為676.6Å3以下,進而較佳為645.9Å3以下。若單位晶格體積過大,或單位晶格體積過小,則有骨架構造不穩定化而副產其他構造之雜質,從而導致發光強度降低或色純度降低之傾向。 The present embodiment is calculated by the lattice constant of the unit lattice volume of the aspects of the phosphor of (V) is preferably 522.9Å 3 or more, more preferably 553.6Å 3 or more, and further more preferably 612.0Å 3, and, It is preferably 707.4 Å 3 or less, more preferably 676.6 Å 3 or less, and further preferably 645.9 Å 3 or less. If the unit lattice volume is too large or the unit lattice volume is too small, the skeleton structure is destabilized and impurities of other structures are produced by-products, resulting in a decrease in luminous intensity or a decrease in color purity.

[結晶系與空間群] [Crystal system and space group]

本實施態樣之螢光體之空間群只要於利用單晶X射線繞射可區別之範圍內,於統計學上考慮之平均構造顯示上述長度之重複週期,則無特別限定,較佳為屬於基於「結晶學國際表(第三次修訂版),卷A空間群對稱性」之4號(P21)者。此處,晶格常數及空間群可按照常法而求出。晶格常數可對X射線繞射及中子射線繞射之結果進行里特沃爾德(Rietveld)解析而求出,空間群可藉由電子束繞射而求出。再者,本實施態樣之螢光體之結晶系為單斜晶。 The space group of the phosphor of the present embodiment is not particularly limited as long as it exhibits a repetition period of the above-described length in a statistically considered average structure within a range distinguishable by single-crystal X-ray diffraction, and preferably belongs to Based on the "Crystalline International Table (Third Revision), volume A space group symmetry" No. 4 (P2 1 ). Here, the lattice constant and the space group can be obtained by a usual method. The lattice constant can be obtained by analyzing the results of X-ray diffraction and neutron ray diffraction by Rietveld, and the space group can be obtained by electron beam diffraction. Further, the crystal of the phosphor of the present embodiment is monoclinic.

[粉末X射線繞射(XRD)圖案] [Powder X-ray diffraction (XRD) pattern]

本實施態樣之螢光體於使用CuKα射線(1.5418Å)所測得之粉末X射線繞射圖案中,於以下所示之區域1~5具有波峰。再者,於區域4具有至少2個波峰。又,於區域5亦具有至少2個波峰,且其中之一個波峰於粉末X射線繞射圖案中具有最高之波峰強度。將其定義為最強波峰強度:Imax。此處,波峰強度係進行背景 修正而獲得之值。 The phosphor of the present embodiment has a peak in the region 1 to 5 shown below in the powder X-ray diffraction pattern measured by CuKα ray (1.5418 Å). Furthermore, there are at least two peaks in region 4. Further, the region 5 also has at least two peaks, and one of the peaks has the highest peak intensity in the powder X-ray diffraction pattern. It is defined as the strongest peak intensity: I max . Here, the peak intensity is a value obtained by performing background correction.

區域1 14.73°≦2θ≦15.77° Area 1 14.73°≦2θ≦15.77°

區域2 19.37°≦2θ≦20.95° Area 2 19.37°≦2θ≦20.95°

區域3 26.00°≦2θ≦28.25° Area 3 26.00°≦2θ≦28.25°

區域4 28.26°≦2θ≦30.29° Area 4 28.26°≦2θ≦30.29°

區域5 30.30°≦2θ≦33.21° Area 5 30.30°≦2θ≦33.21°

於本實施態樣中,所謂於區域1~5具有波峰,意指峰頂位於區域1~5之範圍內。於本實施態樣中,特定分出區域1~5之原因僅僅在於選擇本實施態樣之螢光體所特有之波峰。再者,於本實施態樣之螢光體中,根據結晶之形狀不同,存在於測定時發生配向而產生可於X射線繞射圖案中確認之波峰、及無法確認之波峰之情況。於本實施態樣中之區域1、2、5出現之波峰係即便發生配向亦可特徵性地確認之波峰。 In the present embodiment, the regions 1 to 5 have peaks, which means that the peaks are located in the range of the regions 1 to 5. In the present embodiment, the reason for the specific separation regions 1 to 5 is only to select the peaks unique to the phosphor of the present embodiment. Further, in the phosphor of the present embodiment, depending on the shape of the crystal, there are cases where alignment occurs during measurement, and peaks which can be confirmed in the X-ray diffraction pattern and peaks which cannot be confirmed are generated. The peaks appearing in the regions 1, 2, and 5 in the present embodiment can be characteristically confirmed peaks even if alignment occurs.

作為本實施態樣之螢光體,在藉由X射線繞射或中子射線繞射等繞射法而鑑定之結晶構造中,亦可於結晶構造內內含因層之堆積週期與順序方面出現混亂而產生之積層混亂等之不規則構造,而局部地包含構造混亂之部分。該積層混亂等之有無可於單晶構造解析中,藉由X射線繞射圖案影像中之條紋之有無,或穿透式電子顯微鏡(TEM,Transmission electron microscope)觀察等而確認。於具有此種局部不規則構造之情形時,在利用X射線繞射可區別之範圍內,於統計學上考慮之平均構造顯示週期之重複來表示。構造內之局部不規則構造之有無並無特別限定,較佳為於構造內局部地具有不規則構造,進行構造內之平均化。其原因在於:因煅燒時產生之元素之揮發等所導致之組成偏差,藉由於結晶構造內局部 地採取不規則構造而得到緩和、平均化,藉此本實施態樣之螢光體之相純度得以提高,其他構造之副產亦得到抑制,因此發光強度得以提高,溫度特性變得良好。 In the crystal structure identified by the diffraction method such as X-ray diffraction or neutron beam diffraction, the phosphor of the present embodiment may also have a stacking period and order of the inclusion layer in the crystal structure. Irregular structures such as chaos and chaos that arise from chaos, and partially contain structurally confusing parts. The presence or absence of the disorder or the like can be confirmed by the presence or absence of streaks in the X-ray diffraction pattern image or by observation by a transmission electron microscope (TEM) in the analysis of the single crystal structure. In the case of such a local irregular structure, it is represented by a repetition of the statistically considered average construction display period within a range distinguishable by X-ray diffraction. The presence or absence of the local irregular structure in the structure is not particularly limited, and it is preferable to have an irregular structure locally in the structure and to perform averaging within the structure. The reason is due to compositional variation caused by volatilization of elements generated during calcination, etc., due to localization in the crystal structure. By adopting an irregular structure and mitigating and averaging, the phase purity of the phosphor of the present embodiment is improved, and the by-products of other structures are also suppressed, so that the luminescence intensity is improved and the temperature characteristics are improved.

區域1具有之波峰中之至少一者之波峰強度(I1)相對於最強波峰強度(Imax)之比(I1/Imax)通常為0.10以上,較佳為0.15以上,進而較佳為0.20以上,尤佳為0.25以上。區域2具有之波峰中之至少一者之波峰強度(I2)相對於最強波峰強度(Imax)之比(I2/Imax)通常為0.10以上,較佳為0.15以上,進而較佳為0.20以上。區域3具有之波峰中之至少一者之波峰強度(I3)相對於最強波峰強度(Imax)之比(I3/Imax)通常為0.05以上,較佳為0.10以上,進而較佳為0.20以上,尤佳為0.30以上之強度。區域4具有之波峰中之至少兩者之波峰強度(I4a、I4b)相對於最強波峰強度(Imax)之比(I4a/Imax)、(I4b/Imax)通常均為0.05以上,較佳為0.10以上,進而較佳為0.15以上,進而較佳為0.20以上,進而較佳為0.30以上之強度。區域5具有之波峰中除最強波峰強度(Imax)以外中之至少一者之波峰強度(I5)相對於最強波峰強度(Imax)之比(I5/Imax)通常為0.35以上,較佳為0.40以上,進而較佳為0.45以上。又,本實施態樣之螢光體之區域6(16.50°≦2θ≦19.00°)具有之波峰中之至少一者之波峰強度(I6)相對於最強波峰強度(Imax)之比(I6/Imax)通常為0.30以下,較佳為0.20以下,進而較佳為0.10以下,尤佳為0.05以下。 The ratio (I 1 /I max ) of the peak intensity (I 1 ) to the strongest peak intensity (I max ) of at least one of the peaks of the region 1 is usually 0.10 or more, preferably 0.15 or more, and more preferably 0.20 or more, particularly preferably 0.25 or more. The ratio (I 2 /I max ) of the peak intensity (I 2 ) to the strongest peak intensity (I max ) of at least one of the peaks of the region 2 is usually 0.10 or more, preferably 0.15 or more, and more preferably 0.20 or more. The ratio (I 3 /I max ) of the peak intensity (I 3 ) to the strongest peak intensity (I max ) of at least one of the peaks of the region 3 is usually 0.05 or more, preferably 0.10 or more, and more preferably 0.20 or more, particularly preferably 0.30 or more. The ratio of the peak intensities (I 4a , I 4b ) of at least two of the peaks of the region 4 to the strongest peak intensity (I max ) (I 4a /I max ), (I 4b /I max ) is usually 0.05. The above is preferably 0.10 or more, more preferably 0.15 or more, still more preferably 0.20 or more, and still more preferably 0.30 or more. Region 5 having the peaks, in addition to the strongest peak intensity (I max) of the at least the peak intensity (the I 5) other than one of relative the strongest peak intensity (I max) ratio (I 5 / I max) is usually 0.35 or more, It is preferably 0.40 or more, and more preferably 0.45 or more. Further, the ratio of the peak intensity (I 6 ) of at least one of the peaks of the phosphor region 6 (16.50 ° ≦ 2θ ≦ 19.00 °) of the present embodiment to the strongest peak intensity (I max ) (I 6 /I max ) is usually 0.30 or less, preferably 0.20 or less, more preferably 0.10 or less, and still more preferably 0.05 or less.

<螢光體之製造方法> <Manufacturing method of phosphor>

關於用以獲得本實施態樣之螢光體之原料、螢光體製造法等如下所述。本實施態樣之螢光體之製造方法並無特別限制,例如可藉 由如下方式製造:將作為賦活元素之元素M之原料(以下適當稱為「M源」)、元素A之原料(以下適當稱為「A源」)、及元素Al之原料(以下適當稱為「Al源」)、元素Si之原料(以下適當稱為「Si源」)進行混合(混合步驟),並對所獲得之混合物進行煅燒(煅燒步驟)。又,以下,例如有時將元素Eu之原料稱為「Eu源」,將元素Sm之原料稱為「Sm源」等。 The raw material for obtaining the phosphor of the present embodiment, the method for producing a phosphor, and the like are as follows. The method for producing the phosphor of the present embodiment is not particularly limited, and for example, It is produced by the raw material of the element M (hereinafter referred to as "M source" as appropriate), the raw material of the element A (hereinafter referred to as "A source" as appropriate), and the raw material of the element Al (hereinafter referred to as appropriate) The "Al source") and the raw material of the element Si (hereinafter referred to as "Si source" as appropriate) are mixed (mixing step), and the obtained mixture is calcined (calcination step). In the following, for example, the raw material of the element Eu may be referred to as "Eu source", and the raw material of the element Sm may be referred to as "Sm source".

[螢光體原料] [fluorescent material]

作為用於製造本實施態樣之螢光體之螢光體原料(即M源、A源、Al源及Si源),可列舉M元素、A元素、Al及Si之各元素之金屬、合金、醯亞胺化合物、氮氧化物、氮化物、氧化物、氫氧化物、碳酸鹽、硝酸鹽、硫酸鹽、草酸鹽、羧酸鹽、鹵化物等。只要考慮對複合氮氧化物之反應性,或煅燒時之NOx、SOx等之產生量較低等而自該等化合物中適當選擇即可。 Examples of the phosphor raw material (i.e., M source, A source, Al source, and Si source) for producing the phosphor of the present embodiment include metals and alloys of elements of M element, A element, Al, and Si. , quinone imine compounds, nitrogen oxides, nitrides, oxides, hydroxides, carbonates, nitrates, sulfates, oxalates, carboxylates, halides, and the like. The reactivity with respect to the composite nitrogen oxides, or the amount of generation of NOx, SOx, or the like at the time of calcination may be considered as appropriate, and may be appropriately selected from the compounds.

(M源) (M source)

於M源中,作為Eu源之具體例,可列舉:Eu2O3、Eu2(SO4)3、Eu2(C2O4)3.10H2O、EuCl2、EuCl3、Eu(NO3)3.6H2O、EuN、EuNH等。其中,較佳為Eu2O3、EuN等,尤佳為EuN。又,作為Sm源、Tm源、Yb源等其他賦活元素之原料之具體例,可列舉於作為Eu源之具體例所列舉之各化合物,將其中Eu分別置換為Sm、Tm、Yb等而成之化合物。 Specific examples of the Eu source in the M source include Eu 2 O 3 , Eu 2 (SO 4 ) 3 , and Eu 2 (C 2 O 4 ) 3 . 10H 2 O, EuCl 2 , EuCl 3 , Eu(NO 3 ) 3 . 6H 2 O, EuN, EuNH, and the like. Among them, Eu 2 O 3 , EuN, and the like are preferable, and EuN is particularly preferable. Further, specific examples of the raw material of the other active elements such as the Sm source, the Tm source, and the Yb source are exemplified by the respective compounds exemplified as the Eu source, and Eu is replaced by Sm, Tm, and Yb, respectively. Compound.

(A源) (A source)

於A源中,作為Sr源之具體例,可列舉:SrO、Sr(OH)2.8H2O、SrCO3、Sr(NO3)2、SrSO4、Sr(C2O4).H2O、Sr(OCOCH3)2.0.5H2O、SrCl2、Sr3N2、SrNH等。其中,較佳為SrO、SrCO3、Sr2N、Sr3N2,尤佳為Sr2N、Sr3N2。又,就反應性之方面而言,較佳為粒徑較小者;就發光效率之方面而言,較佳為純度較高者。又,作為Ba源、Ca源、Mg源等其他鹼土金屬元素之原料之具體例,可列舉於作為上述Sr源之具體例所列舉之各化合物,將其中Sr置換為例如Ba、Ca、Mg等而成之化合物。 Specific examples of the Sr source in the A source include SrO and Sr(OH) 2 . 8H 2 O, SrCO 3 , Sr(NO 3 ) 2 , SrSO 4 , Sr(C 2 O 4 ). H 2 O, Sr(OCOCH 3 ) 2 . 0.5H 2 O, SrCl 2 , Sr 3 N 2 , SrNH, and the like. Wherein, preferably SrO, SrCO 3, Sr 2 N , Sr 3 N 2, particularly preferably Sr 2 N, Sr 3 N 2 . Further, in terms of reactivity, the particle diameter is preferably small; and in terms of luminous efficiency, it is preferably higher in purity. Further, specific examples of the raw material of other alkaline earth metal elements such as a Ba source, a Ca source, and a Mg source include each compound exemplified as a specific example of the Sr source, and Sr is replaced by, for example, Ba, Ca, Mg, or the like. a compound.

(Al源) (Al source)

作為Al源之具體例,可列舉:AlN、Al2O3、Al(OH)3、AlOOH、Al(NO3)3等。其中,較佳為AlN、Al2O3,尤佳為AlN。又,作為AlN,就反應性之方面而言,較佳為粒徑較小者;就發光效率之方面而言,較佳為純度較高者。作為其他三價元素之原料之具體例,可列舉於作為上述Al源之具體例所列舉之各化合物,將其中Al置換為B、Ga、In、Sc、Y、La、Gd、Lu等而成之化合物。再者,Al源亦可使用元素之Al。 Specific examples of the Al source include AlN, Al 2 O 3 , Al(OH) 3 , AlOOH, and Al(NO 3 ) 3 . Among them, AlN, Al 2 O 3 is preferable, and AlN is particularly preferable. Further, as the AlN, the particle size is preferably small in terms of reactivity, and it is preferably higher in terms of luminous efficiency. Specific examples of the raw material of the other trivalent element include each of the compounds exemplified as the specific examples of the Al source, and the Al is replaced by B, Ga, In, Sc, Y, La, Gd, and Lu. Compound. Furthermore, the Al source can also use the elemental Al.

(Si源) (Si source)

作為Si源之具體例,較佳為使用SiO2或Si3N4。又,亦可使用成為SiO2之化合物。作為此種化合物,具體而言,可列舉:SiO2、H4SiO4、Si(OCOCH3)4等。又,作為Si3N4,就反應性之方面而言,較佳為粒徑較小者;就發光效率之方面而言,較佳為純度較高者。進而,較佳為作為雜質之碳元素之含有比率較少者。作為其他四價 元素之原料之具體例,可列舉於作為上述Si源之具體例所列舉之各化合物,將其中Si分別置換為Ge、Ti、Zr、Hf等而成之化合物。再者,Si源亦可使用元素之Si。 As a specific example of the Si source, SiO 2 or Si 3 N 4 is preferably used. Further, a compound which is SiO 2 can also be used. Specific examples of such a compound include SiO 2 , H 4 SiO 4 , Si(OCOCH 3 ) 4 and the like. Further, as Si 3 N 4 , the particle size is preferably small in terms of reactivity, and it is preferably higher in terms of luminous efficiency. Further, it is preferable that the content ratio of the carbon element as an impurity is small. Specific examples of the raw material of the other tetravalent element include a compound in which Si is replaced by Ge, Ti, Zr, Hf or the like, which is a specific example of the Si source. Furthermore, the Si source can also use the Si of the element.

再者,上述M源、A源、Al源及Si源分別可僅使用一種,亦可以任意組合及比率併用兩種以上。 Further, the M source, the A source, the Al source, and the Si source may be used singly or in combination of two or more kinds in any combination.

[混合步驟] [mixing step]

可以獲得目標組成之方式稱量螢光體原料,使用球磨機等進行充分混合後,填充至坩堝中,於既定溫度、環境下進行煅燒,並將煅燒物粉碎、清洗,藉此獲得本實施態樣之螢光體。 The phosphor material can be weighed and obtained by a ball mill or the like, and then filled in a crucible, and then calcined at a predetermined temperature and environment, and the calcined product is pulverized and washed to obtain the present embodiment. Fluorescent body.

作為上述混合方法並無特別限定,可為乾式混合法或濕式混合法中之任一者。作為乾式混合法,例如可列舉球磨等。作為濕式混合法,例如為如下方法:向上述螢光體原料中添加水等溶劑或分散介質,使用研缽與杵進行混合,製成溶液或漿料之狀態後,藉由噴霧乾燥、加熱乾燥,或自然乾燥等而使其乾燥。 The mixing method is not particularly limited, and may be either a dry mixing method or a wet mixing method. Examples of the dry mixing method include ball milling and the like. The wet mixing method is, for example, a method in which a solvent or a dispersion medium such as water is added to the phosphor raw material, and the mixture is mixed with a crucible to form a solution or a slurry, and then spray-dried and heated. Dry it, or dry it naturally.

[煅燒步驟] [calcination step]

將所獲得之混合物填充至以與各螢光體原料之反應性較低之材料製成之坩堝或托盤等耐熱容器中。作為此種煅燒時所使用之耐熱容器之材質,只要無損本實施態樣之效果,則無特別限制,例如可列舉氮化硼等之坩堝。 The obtained mixture is filled in a heat-resistant container such as a crucible or a tray made of a material having low reactivity with each of the phosphor materials. The material of the heat-resistant container used in the calcination is not particularly limited as long as the effect of the present embodiment is not impaired, and examples thereof include boron nitride.

煅燒溫度係根據壓力等其他條件而異,通常可於1800℃以上且2200℃以下之溫度範圍內進行煅燒。作為煅燒步驟中之最高到達溫度,通常為1800℃以上,較佳為1900℃以上,又,通常 為2200℃以下,較佳為2150℃以下,更佳為2100℃以下。若煅燒溫度過高,則有氮氣飛散而於母體結晶中產生缺陷而發生著色之傾向;若過低,則有固相反應之進行變慢之傾向,有難以獲得目標相作為主相之情形。 The calcination temperature varies depending on other conditions such as pressure, and can usually be calcined in a temperature range of 1800 ° C or higher and 2200 ° C or lower. As the highest temperature reached in the calcination step, it is usually 1800 ° C or higher, preferably 1900 ° C or higher, and, usually, It is 2200 ° C or less, preferably 2150 ° C or less, more preferably 2100 ° C or less. When the calcination temperature is too high, nitrogen gas scatters and tends to be colored in the mother crystal to cause coloring. When the temperature is too low, the solid phase reaction tends to be slow, and it is difficult to obtain the target phase as the main phase.

雖然亦根據煅燒溫度等而異,但通常為0.2MPa以上,較佳為0.4MPa以上,又,通常為200MPa以下,較佳為190MPa以下。於抑制構成元素、尤其是鹼土金屬元素之揮發、抑制產生缺陷之情形時,較佳為0.8MPa以上,進而較佳為10MPa以上,進而較佳為50MPa以上,進而較佳為100MPa以上,尤佳為150MPa以上。又,於欲獲得吸收效率較高之螢光體之情形時,較佳為190MPa以下,進而較佳為50MPa以下,進而較佳為10MPa以下,尤佳為1.0MPa以下。 Although it varies depending on the calcination temperature and the like, it is usually 0.2 MPa or more, preferably 0.4 MPa or more, and usually 200 MPa or less, preferably 190 MPa or less. When the volatilization of the constituent element, particularly the alkaline earth metal element, is suppressed, and the occurrence of defects is suppressed, it is preferably 0.8 MPa or more, more preferably 10 MPa or more, further preferably 50 MPa or more, further preferably 100 MPa or more, and particularly preferably It is 150 MPa or more. Further, in the case of obtaining a phosphor having a high absorption efficiency, it is preferably 190 MPa or less, more preferably 50 MPa or less, further preferably 10 MPa or less, and particularly preferably 1.0 MPa or less.

於煅燒步驟中之壓力為10MPa以下進行煅燒之情形時,煅燒時之最高到達溫度通常為1800℃以上,較佳為1900℃以上,更佳為2000℃以上,又,通常為2200℃以下,較佳為2150℃以下,更佳為2100℃以下。若煅燒溫度未滿1800℃,則固相反應不進行,因此有僅出現雜質相或未反應相,而難以獲得目標相作為主相之情形。 When the pressure in the calcination step is 10 MPa or less, the highest temperature at the time of calcination is usually 1800 ° C or higher, preferably 1900 ° C or higher, more preferably 2000 ° C or higher, and usually 2200 ° C or lower. Preferably, it is 2150 ° C or less, more preferably 2100 ° C or less. If the calcination temperature is less than 1800 ° C, the solid phase reaction does not proceed, so that only an impurity phase or an unreacted phase occurs, and it is difficult to obtain a target phase as a main phase.

又,即便極微量地獲得目標結晶相,亦有於結晶內成為發光中心之元素、尤其是Eu元素未擴散而使量子效率降低之可能性。又,若煅燒溫度過高,則構成目標螢光體結晶之元素容易揮發,形成晶格缺陷或分解而產生其他相作為雜質之可能性較高。 Further, even if the target crystal phase is obtained in a very small amount, there is a possibility that the element which becomes the center of the luminescence in the crystal, in particular, the Eu element is not diffused, and the quantum efficiency is lowered. Further, when the calcination temperature is too high, the element constituting the crystal of the target phosphor is easily volatilized, and it is highly likely that crystal lattice defects or decomposition will occur and other phases will be generated as impurities.

煅燒步驟中之升溫速度通常為2℃/分鐘以上,較佳為5℃/分鐘以上,更佳為10℃/分鐘以上,又,通常為30℃/分鐘以下, 較佳為25℃/分鐘以下。若升溫速度低於該範圍,則有煅燒時間變長之可能性。又,若升溫速度高於該範圍,則有煅燒裝置、容器等破損之情形。 The temperature increase rate in the calcination step is usually 2 ° C / min or more, preferably 5 ° C / min or more, more preferably 10 ° C / min or more, and usually 30 ° C / min or less. It is preferably 25 ° C / min or less. If the temperature increase rate is lower than the range, there is a possibility that the calcination time becomes long. Further, when the temperature increase rate is higher than the above range, the calcination apparatus, the container, and the like may be damaged.

煅燒步驟中之煅燒環境只要可獲得本實施態樣之螢光體則為任意,較佳為設為含有氮氣之環境。具體而言,可列舉氮氣環境、含有氫氣之氮氣環境等,其中,較佳為氮氣環境。再者,煅燒環境之氧氣含量通常宜設為10ppm以下、較佳為5ppm以下。 The calcination atmosphere in the calcination step is arbitrary as long as the phosphor of the present embodiment can be obtained, and it is preferably an environment containing nitrogen. Specifically, a nitrogen atmosphere, a nitrogen atmosphere containing hydrogen, and the like are exemplified, and among them, a nitrogen atmosphere is preferred. Further, the oxygen content in the calcination atmosphere is usually preferably 10 ppm or less, preferably 5 ppm or less.

煅燒時間亦根據煅燒時之溫度或壓力等而異,通常為10分鐘以上,較佳為30分鐘以上,又,通常為72小時以下,較佳為12小時以下。若煅燒時間過短,則無法促進晶粒產生與晶粒成長,因此無法獲得特性良好之螢光體;若煅燒時間過長,則促進構成元素之揮發,因此有因原子空位導致於結晶構造內誘發缺陷而無法獲得特性良好之螢光體的情形。 The calcination time varies depending on the temperature, pressure, and the like at the time of calcination, and is usually 10 minutes or longer, preferably 30 minutes or longer, and usually 72 hours or shorter, preferably 12 hours or shorter. If the calcination time is too short, crystal growth and grain growth cannot be promoted, so that a phosphor having excellent properties cannot be obtained. If the calcination time is too long, the volatilization of the constituent elements is promoted, and thus the atomic vacancies are caused in the crystal structure. A case where a defect is induced and a fluorescent body having good characteristics cannot be obtained.

再者,煅燒步驟亦可視需要重複進行數次。此時,於第一次煅燒與第二次煅燒中,可將煅燒條件設為相同,亦可設為不同。 Furthermore, the calcination step can be repeated several times as needed. At this time, in the first calcination and the second calcination, the calcination conditions may be the same or different.

於對產生螢光體時原子均勻地擴散而內部量子效率較高之螢光體進行煅燒之情形,或獲得數μm之較大之粒子之情形時,反覆煅燒較有效。該情形時之第一煅燒步驟之最高到達溫度較佳為低於第二煅燒步驟中之最高溫度。 In the case where the phosphor is uniformly diffused while the phosphor is generated and the phosphor having a high internal quantum efficiency is calcined, or when a large particle of several μm is obtained, the reverse calcination is effective. The highest temperature of the first calcination step in this case is preferably lower than the highest temperature in the second calcination step.

[後處理步驟] [post-processing steps]

對所獲得之煅燒物組合壓碎、粉碎及/或分級操作而製成既定尺寸之粉末。此處,宜以D50成為約30μm以下之方式進行處理。作 為具體之處理例,可列舉:對合成物進行網眼45μm左右之篩分級處理並將通過篩之粉末轉至下一步驟之方法;或者使用球磨機或振磨機、噴射磨機等一般之粉碎機將合成物粉碎為既定粒度之方法。於後者之方法中,過度之粉碎不僅會產生容易使光散射之微粒子,而且亦有於粒子表面產生結晶缺陷,而引起發光效率降低之可能性。 The obtained calcined product is crushed, pulverized, and/or classified to produce a powder of a predetermined size. Here, it is preferable to carry out the treatment so that D 50 becomes about 30 μm or less. Specific examples of the treatment include a method of subjecting a composition to a sieve classification process of about 45 μm in a mesh and transferring the powder passing through the sieve to the next step; or using a general pulverization such as a ball mill or a vibrating mill or a jet mill. The method of pulverizing the composition into a predetermined particle size. In the latter method, excessive pulverization not only generates fine particles which easily scatter light, but also causes crystal defects on the surface of the particles, which may cause a decrease in luminous efficiency.

又,亦可視需要設置對螢光體(煅燒物)進行清洗之步驟。於清洗步驟後,使螢光體乾燥直至附著水分消失,而供於使用。進而,亦可視需要為了解開凝集而進行分散、分級處理。再者,本實施態樣之螢光體亦可藉由預先將構成金屬元素合金化並將其氮化而形成之所謂合金法而形成。 Further, a step of cleaning the phosphor (calcined material) may be provided as needed. After the washing step, the phosphor is dried until the adhering moisture disappears and is used for use. Further, it is also possible to perform dispersion and classification processing for understanding the agglutination as needed. Further, the phosphor of the present embodiment can also be formed by a so-called alloy method in which a constituent metal element is alloyed and nitrided in advance.

<含有螢光體之組成物> <Composition containing a phosphor>

本發明之第一實施態樣之螢光體亦可與液體介質混合而使用。尤其於將本發明之第一實施態樣之螢光體用於發光裝置等用途之情形時,較佳為以使其分散於液體介質中之形態使用。將於液體介質中分散有本發明之第一實施態樣之螢光體者,作為本發明之一種實施態樣而適當稱為「本發明之一實施態樣之含有螢光體之組成物」等。 The phosphor of the first embodiment of the present invention can also be used by mixing with a liquid medium. In particular, when the phosphor of the first embodiment of the present invention is used for a light-emitting device or the like, it is preferably used in such a manner as to be dispersed in a liquid medium. The phosphor of the first embodiment of the present invention is dispersed in a liquid medium, and is appropriately referred to as "a composition containing a phosphor in an embodiment of the present invention" as an embodiment of the present invention. Wait.

[螢光體] [fluorescent body]

本實施態樣之含有螢光體之組成物中所含有之本發明之第一實施態樣之螢光體之種類並無限制,可自上述者中任意選擇。又,本實施態樣之含有螢光體之組成物中所含有之本發明之第一實施 態樣之螢光體可僅為1種,亦可以任意組合及比率併用2種以上。進而,於本實施態樣之含有螢光體之組成物中,只要無損本實施態樣之效果,則亦可含有除本發明之第一實施態樣之螢光體以外的螢光體。 The type of the phosphor of the first embodiment of the present invention contained in the phosphor-containing composition of the present embodiment is not limited, and may be arbitrarily selected from the above. Further, the first embodiment of the present invention contained in the composition containing the phosphor of the present embodiment The phosphor of the aspect may be used alone or in combination of two or more kinds in any combination and in any ratio. Further, the phosphor-containing composition of the present embodiment may contain a phosphor other than the phosphor of the first embodiment of the present invention as long as the effects of the present embodiment are not impaired.

[液體介質] [Liquid medium]

作為本實施態樣之含有螢光體之組成物中所使用的液體介質,只要於目標範圍內無損該螢光體之性能,則無特別限定。例如只要為於所需之使用條件下顯示液狀之性質,使本發明之第一實施態樣之螢光體較佳地分散,並且不會產生欠佳之反應者,則可使用任意之無機系材料及/或有機系材料,例如可列舉:聚矽氧樹脂、環氧樹脂、聚醯亞胺聚矽氧樹脂等。 The liquid medium used in the phosphor-containing composition of the present embodiment is not particularly limited as long as the performance of the phosphor is not impaired within the target range. For example, any inorganic substance may be used as long as the phosphor of the first embodiment of the present invention is preferably dispersed in a liquid state under the desired use conditions, and no adverse reaction occurs. Examples of the material and/or the organic material include a polyoxymethylene resin, an epoxy resin, and a polyamidene polyoxymethylene resin.

[液體介質及螢光體之含有率] [Liquid medium and phosphor content]

本實施態樣之含有螢光體之組成物中之螢光體及液體介質之含有率只要不顯著損害本實施態樣之效果則為任意,關於液體介質,相對於本實施態樣之含有螢光體之組成物整體,通常為50重量%以上,較佳為75重量%以上,且通常為99重量%以下,較佳為95重量%以下。 The content ratio of the phosphor and the liquid medium in the phosphor-containing composition of the present embodiment is arbitrary as long as the effect of the present embodiment is not significantly impaired, and the liquid medium contains the fluorescein with respect to the present embodiment. The composition of the light body is usually 50% by weight or more, preferably 75% by weight or more, and usually 99% by weight or less, preferably 95% by weight or less.

[其他成分] [Other ingredients]

再者,於本實施態樣之含有螢光體之組成物中,只要不顯著損害本實施態樣之效果,則除螢光體及液體介質以外,亦可含有其他成分。又,其他成分可僅使用1種,亦可以任意組合及比率併用2 種以上。 Further, in the phosphor-containing composition of the present embodiment, other components may be contained in addition to the phosphor and the liquid medium as long as the effects of the present embodiment are not significantly impaired. Further, the other components may be used alone or in combination of any ratio and ratio. More than one species.

<發光裝置> <Lighting device>

本發明之第二實施態樣係包含第1發光體(激發光源),及藉由來自該第1發光體之光的照射而發出可見光之第2發光體的發光裝置,並且該第2發光體含有本發明之第一實施態樣之螢光體。此處,本發明之第一實施態樣之螢光體可單獨使用任一種,亦可以任意組合及比率併用2種以上。 A second embodiment of the present invention includes a first illuminant (excitation light source), and a illuminating device that emits a second illuminant of visible light by irradiation of light from the first illuminator, and the second illuminator A phosphor comprising the first embodiment of the present invention. Here, the phosphors according to the first embodiment of the present invention may be used singly or in combination of two or more kinds in any combination and in any ratio.

作為本發明之第一實施態樣之螢光體,例如使用於來自激發光源之光的照射下,發出藍色或綠色區域螢光之螢光體。具體而言,於構成發光裝置之情形時,作為本發明之第一實施態樣中之藍色或綠色螢光體,較佳為於500nm以上且560nm以下之波長範圍內具有發光波峰者。 The phosphor according to the first embodiment of the present invention is, for example, a phosphor that emits blue or green region fluorescence under irradiation of light from an excitation light source. Specifically, in the case of constituting the light-emitting device, the blue or green phosphor in the first embodiment of the present invention preferably has a light-emitting peak in a wavelength range of 500 nm or more and 560 nm or less.

再者,關於激發源,可使用於未滿420nm之波長範圍內具有發光波峰者。以下,對本發明之第一實施態樣之螢光體,於500nm以上且560nm以下之波長範圍內具有發光波峰,且第一發光體係使用於350nm以上且460nm以下之波長範圍內具有發光波峰者之情形時的發光裝置之態樣進行記載,但本實施態樣並不限定於該等。 Further, regarding the excitation source, it is possible to have a luminescence peak in a wavelength range of less than 420 nm. Hereinafter, the phosphor of the first embodiment of the present invention has a light-emitting peak in a wavelength range of 500 nm or more and 560 nm or less, and the first light-emitting system has a light-emitting peak in a wavelength range of 350 nm or more and 460 nm or less. The aspect of the light-emitting device in the case is described, but the embodiment is not limited to these.

於上述情形時,本實施態樣之發光裝置例如可設為以下態樣。即,可使用於350nm以上且460nm以下之波長範圍內具有發光波峰者作為第1發光體,使用於500nm以上且560nm以下之波長範圍內具有發光波峰之至少1種螢光體(本發明之第一實施態樣之螢光體)作為第2發光體之第1螢光體,使用於580nm以上 且680nm以下之波長範圍內具有發光波峰之螢光體(紅色螢光體)作為第2發光體之第2螢光體的態樣。 In the above case, the light-emitting device of the present embodiment can be set, for example, in the following manner. In other words, at least one type of phosphor having an emission peak in a wavelength range of 500 nm or more and 560 nm or less can be used as the first illuminant in a wavelength range of 350 nm or more and 460 nm or less (the present invention) The phosphor of one embodiment is used as the first phosphor of the second illuminant, and is used at 580 nm or more. In addition, a phosphor having a light-emitting peak (red phosphor) in the wavelength range of 680 nm or less is used as the second phosphor of the second light-emitting body.

(紅色螢光體) (red phosphor)

作為上述態樣中之紅色螢光體,例如可較佳地使用下述螢光體。作為Mn賦活氟化物螢光體,例如可列舉K2(Si,Ti)F6:Mn、K2Si1-xNaxAlxF6:Mn(0<x<1)(一併為KSF螢光體);作為硫化物螢光體,例如可列舉(Sr,Ca)S:Eu(CAS螢光體)、La2O2S:Eu(LOS螢光體);作為石榴石系螢光體,例如可列舉(Y,Lu,Gd,Tb)3Mg2AlSi2O12:Ce;作為奈米粒子,例如可列舉CdSe;作為氮化物或氮氧化物螢光體,例如可列舉(Sr,Ca)AlSiN3:Eu(S/CASN螢光體)、(CaAlSiN3)1-x.(SiO2N2)x:Eu(CASON螢光體)、(La,Ca)3(Al,Si)6N11:Eu(LSN螢光體)、(Ca,Sr,Ba)2Si5(N,O)8:Eu(258螢光體)、(Sr,Ca)Al1+xSi4-xOxN7-x:Eu(1147螢光體)、Mx(Si,Al)12(O,N)16:Eu(M為Ca、Sr等)(α-賽隆螢光體)、Li(Sr,Ba)Al3N4:Eu(上述x均為0<x<1)等。作為紅色螢光體,於上述中較佳為KSF螢光體或S/CASN螢光體。 As the red phosphor in the above aspect, for example, the following phosphor can be preferably used. Examples of the Mn-activated fluoride phosphor include K 2 (Si, Ti) F 6 : Mn, K 2 Si 1-x Na x Al x F 6 : Mn (0 < x < 1) (together KSF) Fluorescent body; examples of the sulfide phosphor include (Sr, Ca) S: Eu (CAS phosphor), La 2 O 2 S: Eu (LOS phosphor); and garnet fluorescence Examples of the body include (Y, Lu, Gd, Tb) 3 Mg 2 AlSi 2 O 12 :Ce; examples of the nanoparticle include CdSe; and examples of the nitride or oxynitride phosphor include (Sr , Ca) AlSiN 3 : Eu (S/CASN phosphor), (CaAlSiN 3 ) 1-x . (SiO 2 N 2 ) x :Eu (CASON phosphor), (La,Ca) 3 (Al,Si) 6 N 11 :Eu (LSN phosphor), (Ca,Sr,Ba) 2 Si 5 ( N,O) 8 :Eu (258 phosphor), (Sr,Ca)Al 1+x Si 4-x O x N 7-x :Eu (1147 phosphor), M x (Si,Al) 12 (O,N) 16 :Eu (M is Ca, Sr, etc.) (α-Sialon phosphor), Li(Sr,Ba)Al 3 N 4 :Eu (the above x is 0<x<1), etc. . As the red phosphor, a KSF phosphor or an S/CASN phosphor is preferred in the above.

(黃色螢光體) (yellow phosphor)

於上述態樣中,亦可視需要使用於550~580nm之範圍內具有發光波峰之螢光體(黃色螢光體)。作為黃色螢光體,例如可較佳地使用下述螢光體。作為石榴石系螢光體,例如可列舉(Y,Gd,Lu,Tb,La)3(Al,Ga)5O12:(Ce,Eu,Nd);作為正矽酸鹽,例如可列舉(Ba,Sr,Ca,Mg)2SiO4:(Eu,Ce);作為氮(氧)化物螢光體,例如可 列舉(Ba,Ca,Mg)Si2O2N2:Eu(SION系螢光體)、(Li,Ca)2(Si,Al)12(O,N)16:(Ce,Eu)(α-賽隆螢光體)、(Ca,Sr)AlSi4(O,N)7:(Ce,Eu)(1147螢光體)、(La,Ca,Y)3(Al,Si)6N11:Ce(LSN螢光體)等。再者,於上述螢光體中,較佳為石榴石系螢光體,其中,最佳為Y3Al5O12:Ce所表示之YAG系螢光體。 In the above aspect, a phosphor having a luminescence peak (yellow phosphor) in the range of 550 to 580 nm may be used as needed. As the yellow phosphor, for example, the following phosphor can be preferably used. Examples of the garnet-based phosphor include (Y, Gd, Lu, Tb, La) 3 (Al, Ga) 5 O 12 : (Ce, Eu, Nd); and as the orthosilicate, for example, Ba, Sr, Ca, Mg) 2 SiO 4 : (Eu, Ce); as the nitrogen (oxygen) phosphor, for example, (Ba, Ca, Mg) Si 2 O 2 N 2 : Eu (SION) Light body), (Li, Ca) 2 (Si, Al) 12 (O, N) 16 : (Ce, Eu) (α-Sialon phosphor), (Ca, Sr) AlSi 4 (O, N) 7 : (Ce, Eu) (1147 phosphor), (La, Ca, Y) 3 (Al, Si) 6 N 11 : Ce (LSN phosphor), and the like. Further, among the above-mentioned phosphors, a garnet-based phosphor is preferable, and among them, a YAG-based phosphor represented by Y 3 Al 5 O 12 :Ce is preferable.

(綠色螢光體) (green phosphor)

於上述態樣中,作為綠色螢光體,亦可包含除本發明之第一實施態樣之螢光體以外之螢光體,例如可較佳地使用下述螢光體。作為石榴石系螢光體,例如可列舉(Y,Gd,Lu,Tb,La)3(Al,Ga)5O12:(Ce,Eu,Nd)、Ca3(Sc,Mg)2Si3O12:(Ce,Eu)(CSMS螢光體);作為矽酸鹽系螢光體,例如可列舉(Ba,Sr,Ca,Mg)3SiO10:(Eu,Ce)、(Ba,Sr,Ca,Mg)2SiO4:(Ce,Eu)(BSS螢光體);作為氧化物螢光體,例如可列舉(Ca,Sr,Ba,Mg)(Sc,Zn)2O4:(Ce,Eu)(CASO螢光體);作為氮(氧)化物螢光體,例如可列舉(Ba,Sr,Ca,Mg)Si2O2N2:(Eu,Ce)、Si6-zAlzOzN8-x:(Eu,Ce)(β-賽隆螢光體)(0<z≦1)、(Ba,Sr,Ca,Mg,La)3(Si,Al)6O12N2:(Eu,Ce)(BSON螢光體);作為鋁酸鹽螢光體,例如可列舉(Ba,Sr,Ca,Mg)2Al10O17:(Eu,Mn)(GBAM系螢光體)等。 In the above aspect, the green phosphor may include a phosphor other than the phosphor of the first embodiment of the present invention. For example, the following phosphor may be preferably used. Examples of the garnet-based phosphor include (Y, Gd, Lu, Tb, La) 3 (Al, Ga) 5 O 12 : (Ce, Eu, Nd), and Ca 3 (Sc, Mg) 2 Si 3 . O 12 : (Ce, Eu) (CSMS phosphor); examples of the citrate-based phosphor include (Ba, Sr, Ca, Mg) 3 SiO 10 : (Eu, Ce), (Ba, Sr , Ca, Mg) 2 SiO 4 : (Ce, Eu) (BSS phosphor); as the oxide phosphor, for example, (Ca, Sr, Ba, Mg) (Sc, Zn) 2 O 4 : ( Ce, Eu) (CASO phosphor); as the nitrogen (oxygen) phosphor, for example, (Ba, Sr, Ca, Mg) Si 2 O 2 N 2 : (Eu, Ce), Si 6-z Al z O z N 8-x : (Eu, Ce) (β-Sialon phosphor) (0<z≦1), (Ba, Sr, Ca, Mg, La) 3 (Si, Al) 6 O 12 N 2 : (Eu, Ce) (BSON phosphor); as the aluminate phosphor, for example, (Ba, Sr, Ca, Mg) 2 Al 10 O 17 : (Eu, Mn) (GBAM system) Fluorescent) and so on.

[發光裝置之構成] [Composition of light-emitting device]

本實施態樣之發光裝置具有第1發光體(激發光源),且至少使用本發明之第一實施態樣之螢光體作為第2發光體,除此以外,其構成並無限制,可任意採取公知之裝置構成。作為裝置構成及發光 裝置之實施形態,例如可列舉日本專利特開2007-291352號公報中所記載者。此外,作為發光裝置之形態,可列舉炮彈型、杯型、板上晶片、非接觸式螢光粉等。 The light-emitting device of the present embodiment has a first light-emitting body (excitation light source) and at least the phosphor of the first embodiment of the present invention is used as the second light-emitting body, and the configuration thereof is not limited, and may be arbitrary. It is constructed by a known device. As a device and illuminate The embodiment of the device is described in, for example, Japanese Laid-Open Patent Publication No. 2007-291352. Further, examples of the form of the light-emitting device include a shell type, a cup type, an on-wafer, and a non-contact type phosphor.

<發光裝置之用途> <Use of light-emitting device>

本發明之第二實施態樣之發光裝置之用途並無特別限制,可用於通常之發光裝置會使用之各種領域,就色再現範圍較廣且演色性亦較高而言,其中尤其可較佳地用作照明裝置或影像顯示裝置之光源。 The use of the light-emitting device according to the second embodiment of the present invention is not particularly limited, and can be used in various fields in which a general light-emitting device can be used, and particularly preferably in terms of a wide color reproduction range and high color rendering property. The ground is used as a light source for a lighting device or an image display device.

[照明裝置] [lighting device]

本發明之第三實施態樣係一種照明裝置,其特徵在於:具備本發明之第二實施態樣之發光裝置作為光源。於將本發明之第二實施態樣之發光裝置應用於照明裝置之情形時,只要將如上所述之發光裝置適當組入至公知之照明裝置中而使用即可。例如可列舉於保持殼體之底面排列有多個發光裝置之面發光照明裝置等。本發明之第三實施態樣之照明裝置之發光色的平均演色評價數Ra通常為60以上,較佳為65以上,更佳為70以上,尤佳為75以上。藉由使Ra為上述範圍內,可獲得演色性良好之發光裝置。又,本發明之第三實施態樣之照明裝置之發光色的特殊演色評價數R9通常為負10以上,較佳為負5以上,進而較佳為0以上,尤佳為5以上。藉由使特殊演色評價數R9為上述範圍內,可獲得演色性良好之照明裝置。 A third embodiment of the present invention is an illumination device characterized by comprising a light-emitting device according to a second embodiment of the present invention as a light source. In the case where the light-emitting device according to the second embodiment of the present invention is applied to a lighting device, the above-described light-emitting device may be appropriately incorporated into a known lighting device and used. For example, a surface-emitting illumination device or the like in which a plurality of light-emitting devices are arranged on the bottom surface of the holding case can be cited. The average color rendering evaluation Ra of the luminescent color of the illumination device according to the third embodiment of the present invention is usually 60 or more, preferably 65 or more, more preferably 70 or more, and still more preferably 75 or more. When Ra is in the above range, a light-emitting device having good color rendering properties can be obtained. Further, the special color rendering evaluation number R9 of the illuminating color of the illuminating device according to the third embodiment of the present invention is usually negative 10 or more, preferably negative 5 or more, further preferably 0 or more, and particularly preferably 5 or more. By setting the special color rendering number R9 within the above range, an illumination device having good color rendering properties can be obtained.

[影像顯示裝置] [Image display device]

本發明之第四實施態樣係一種影像顯示裝置,其特徵在於:具備本發明之第二實施態樣之發光裝置作為光源。於使用本發明之第二實施態樣之發光裝置作為影像顯示裝置之光源之情形時,該影像顯示裝置之具體構成並無限制,較佳為與彩色濾光片一併使用。例如於作為影像顯示裝置,且設為利用彩色液晶顯示元件之彩色影像顯示裝置之情形時,可藉由將上述發光裝置作為背光源,並將利用液晶之光閘與具有紅、綠、藍之像素之彩色濾光片進行組合而形成影像顯示裝置。 A fourth embodiment of the present invention is an image display device characterized by comprising a light-emitting device according to a second embodiment of the present invention as a light source. In the case where the light-emitting device of the second embodiment of the present invention is used as the light source of the image display device, the specific configuration of the image display device is not limited, and is preferably used together with the color filter. For example, when it is used as a video display device and a color image display device using a color liquid crystal display device, the light-emitting device can be used as a backlight, and the shutters using liquid crystals can be red, green, and blue. The color filters of the pixels are combined to form an image display device.

[實施例] [Examples]

以下,藉由實施例更具體地說明本發明,但本發明只要不脫離其主旨,則並不限定於下述實施例。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to the following examples as long as they do not depart from the gist of the invention.

<測定方法> <Measurement method> [發光特性] [Luminescence characteristics]

將試樣裝入至銅製試樣保持器中,並使用螢光分光光度計FP-6500(JASCO公司製造)而測定激發發光光譜與發光光譜。再者,於測定時,將受光側分光器之狹縫寬度設定為1nm而進行測定。又,發光波峰波長(以下有時稱為「波峰波長」)與發光波峰之半值寬係自所獲得之發光光譜讀取。 The sample was placed in a copper sample holder, and an excitation luminescence spectrum and an luminescence spectrum were measured using a fluorescence spectrophotometer FP-6500 (manufactured by JASCO Corporation). In the measurement, the slit width of the light-receiving side spectroscope was set to 1 nm, and the measurement was performed. Further, the luminescence peak wavelength (hereinafter sometimes referred to as "peak wavelength") and the half value of the luminescence peak are read from the obtained luminescence spectrum.

[色度座標] [chromaticity coordinates]

x、y表色系統(CIE 1931表色系統)之色度座標係根據利用上述方法所獲得之發光光譜的360nm~800nm之波長區域之資料,利用依據JIS Z8724之方法,作為JIS Z8701中所規定之XYZ表色系統中之色度座標CIEx與CIEy而算出。 The chromaticity coordinates of the x, y color system (CIE 1931 color system) are based on the data of the wavelength range of 360 nm to 800 nm of the luminescence spectrum obtained by the above method, and are determined in accordance with JIS Z8724 as specified in JIS Z8701. The chromaticity coordinates CIEx and CIEy in the XYZ color system are calculated.

[利用EPMA之元素分析] [Using EPMA Elemental Analysis]

為了調查本發明之第一實施態樣中所獲得之螢光體之組成而實施下述元素分祈。於利用掃描型電子顯微鏡(SEM)之觀察下選出數個結晶後,使用電子探針顯微分析儀(波長分散型X射線分析裝置:EPMA)JXA-8200(JEOL公司製造)實施各元素之分析。 In order to investigate the composition of the phosphor obtained in the first embodiment of the present invention, the following elemental division was carried out. After several crystals were selected by observation with a scanning electron microscope (SEM), analysis of each element was carried out using an electron probe microanalyzer (wavelength dispersion type X-ray analyzer: EPMA) JXA-8200 (manufactured by JEOL Co., Ltd.). .

[利用能量分散X射線分析(EDX,energy dispersive X-ray)之元素分析] [Elemental analysis using energy dispersive X-ray (EDX)]

為了調查所獲得之螢光體之組成而實施下述元素分析。構成之金屬元素(Sr、Ca、La、Ba、Si、Al、Eu)之分析係使用能量分散型X射線分光法。具體而言,於SEM觀察下選出數個實施例之結晶,並使用堀場製作所製造之能量分散型X射線分析裝置EMAX ENERGY(EMAX x-act檢測器規格)進行分析。 The following elemental analysis was carried out in order to investigate the composition of the obtained phosphor. The analysis of the constituent metal elements (Sr, Ca, La, Ba, Si, Al, Eu) uses an energy dispersive X-ray spectroscopy. Specifically, crystals of several examples were selected under SEM observation, and analyzed using an energy dispersive X-ray analyzer EMAX ENERGY (EMAX x-act detector specification) manufactured by Horiba.

[粉末X射線繞射測定] [Powder X-ray diffraction measurement]

粉末X射線繞射係利用粉末X射線繞射裝置D2 PHASER(BRUKER公司製造)進行精密測定。測定條件如下所示。 The powder X-ray diffraction system was precisely measured by a powder X-ray diffraction device D2 PHASER (manufactured by BRUKER). The measurement conditions are as follows.

使用CuKα球管 Use CuKα tube

X射線輸出=30KV,10mA X-ray output = 30KV, 10mA

掃描範圍2θ=5°~80° Scan range 2θ=5°~80°

讀取寬度=0.025° Read width = 0.025°

[利用透過法之粉末X射線繞射] [Using the powder X-ray diffraction of the transmission method]

利用透過法之粉末X射線繞射,係利用具備成像板及紀尼耶 (Guinier)相機之粉末X射線繞射裝置(HUBER公司製造)進行精密測定。於測定時將試樣裝入至毛細管中,並使毛細管旋轉而實施測定。測定條件如下所示。 Powder X-ray diffraction using the transmission method, using an imaging plate and Ji Nie (Guinier) camera powder X-ray diffraction device (manufactured by HUBER) for precise measurement. The measurement was carried out by loading the sample into a capillary at the time of measurement and rotating the capillary. The measurement conditions are as follows.

使用CuKα球管 Use CuKα tube

X射線輸出=40KV,30mA X-ray output = 40KV, 30mA

掃描範圍2θ=4°~100° Scan range 2θ=4°~100°

讀取寬度=0.005° Read width = 0.005°

[結晶構造解析] [Crystal Structure Analysis]

利用具備成像板與石墨單光儀且以Mo Kα作為X射線源之單晶X射線繞射裝置(Rigaku,R-AXIS RAPID-H)測定單晶粒子之X射線繞射資料。資料之收集與晶格常數之精密化係使用PROCESS-AUTO,X射線形狀吸收修正係使用NUMABS。對於F2之資料使用SHELXL-97進行結晶構造參數之精密化。又,結晶構造之繪圖係使用VESTA。 The X-ray diffraction data of the single crystal particles were measured using a single crystal X-ray diffraction apparatus (Rigaku, R-AXIS RAPID-H) equipped with an imaging plate and a graphite single photometer and using Mo Kα as an X-ray source. The data collection and the precision of the lattice constant are PROCESS-AUTO, and the X-ray shape absorption correction system uses NUMABS. For the data of F 2, the crystal structure parameters were refined using SHELXL-97. Further, the drawing of the crystal structure uses VESTA.

[飛行時間型二次離子質量分析(TOF-SIMS,time of flight-secondary ion mass spectrometry)元素分析] [Time-of-flight secondary ion mass spectrometry (TOF-SIMS, time of flight-secondary ion mass spectrometry) elemental analysis]

對於在SEM觀察下選出之結晶,於下述條件下實施飛行時間型二次離子質量分析(TOF-SIMS),確認有無含有硼。 For the crystals selected under the SEM observation, time-of-flight secondary ion mass spectrometry (TOF-SIMS) was carried out under the following conditions to confirm the presence or absence of boron.

(儀器) (instrument)

TOF.SIMS5(ION.ToF GmbH) TOF.SIMS5 (ION.ToF GmbH)

(極性模式) (polar mode)

正、負 Positive and negative

(初級離子) (primary ion)

種類:Bi1 +,能量:25kV,電流:1.25pA,視野:120×120μm2 Type: Bi 1 + , Energy: 25kV, Current: 1.25pA, Field of view: 120×120μm 2

(濺射離子) (sputtering ions)

種類:O2 +(正),Cs+(負)能量:2kV Type: O 2 + (positive), Cs + (negative) energy: 2kV

電流:360.0nA(正),135.0nA(負)凹坑大小:450×450μm2 Current: 360.0nA (positive), 135.0nA (negative) pit size: 450 × 450μm 2

(週期時間) (period time)

80μs 80μs

(掃描) (scanning)

1024 1024

<螢光體之製造> <Manufacture of phosphors> (實施例1) (Example 1)

使用Sr3N2(Shellac公司製造)、EuN(Shellac公司製造)、Si3N4(宇部興產公司製造)、AlN(Tokuyama公司製造)作為螢光體原料,如下所述般製備螢光體。以成為下述表1所示之各重量之方式利用電子天平稱量上述原料,並放入至氧化鋁研缽中,進行粉碎及混合直至變得均勻。進而,向該混合粉末中添加Mg3N2(Shellac公司製造)0.43g,進而實施粉碎、混合。該等操作係於充滿氬氣之手套箱中進行。 Using Sr 3 N 2 (manufactured by Shellac Co., Ltd.), EuN (manufactured by Shellac Co., Ltd.), Si 3 N 4 (manufactured by Ube Industries, Ltd.), and AlN (manufactured by Tokuyama Co., Ltd.) as phosphor raw materials, phosphors were prepared as described below. . The raw materials were weighed by an electronic balance so as to have the respective weights shown in the following Table 1, and placed in an alumina mortar, and pulverized and mixed until uniform. Further, 0.43 g of Mg 3 N 2 (manufactured by Shellac Co., Ltd.) was added to the mixed powder, and further pulverized and mixed. These operations were carried out in a glove box filled with argon.

自所獲得之原料混合粉末稱量約0.5g,將其直接填充至氮化硼製坩堝中。將該坩堝放置於真空加壓煅燒爐(Shimadzu mectem公司製造)內。繼而,減壓至8×10-3Pa以下後,自室溫真空加熱至800℃。於達到800℃時,於該溫度下維持並導入氮氣5分鐘直至爐內壓力成為0.85MPa。於導入氮氣後,一面將爐內壓力保持為0.85MPa,一面進而升溫至1600℃,並保持1小時。進而,加熱至2050℃,於達到2050℃時維持4小時。於煅燒後冷卻至1200℃,繼而放置冷卻。自所獲得之產物中僅拾出綠色結晶而獲得實施例1之螢光體。 About 0.5 g of the raw material mixed powder obtained was weighed and directly filled into a boron nitride crucible. This crucible was placed in a vacuum press calciner (manufactured by Shimadzu Mectem Co., Ltd.). Then, after depressurizing to 8 × 10 -3 Pa or less, it was heated from room temperature to 800 ° C under vacuum. At 800 ° C, nitrogen gas was maintained and introduced at this temperature for 5 minutes until the pressure in the furnace became 0.85 MPa. After the introduction of nitrogen gas, the pressure in the furnace was maintained at 0.85 MPa, and the temperature was further raised to 1600 ° C for 1 hour. Further, it was heated to 2050 ° C and maintained at 2050 ° C for 4 hours. After calcination, it was cooled to 1200 ° C and then left to cool. The phosphor of Example 1 was obtained by picking up only green crystals from the obtained product.

對於實施例1之螢光體,進行粉末X射線繞射測定,將所獲得之X射線繞射圖案示於圖1。確認出實施例1之螢光體之XRD圖案不存在於粉末繞射檔案(PDF,powder diffraction file)中而係新穎之螢光體。 The phosphor of Example 1 was subjected to powder X-ray diffraction measurement, and the obtained X-ray diffraction pattern is shown in Fig. 1. It was confirmed that the XRD pattern of the phosphor of Example 1 was not present in the powder diffraction file (PDF) and was a novel phosphor.

又,對於實施例1之螢光體,進行SEM觀察,將所得之結果示於圖2。又,為了調查構成元素及其比率而實施元素分析(EPMA測定)。將組成分析之定性結果示於圖3,又,將定量結果(平均值)示於下述表2。 Further, the phosphor of Example 1 was observed by SEM, and the obtained results are shown in Fig. 2 . Further, elemental analysis (EPMA measurement) was carried out in order to investigate constituent elements and their ratios. The qualitative results of the composition analysis are shown in Fig. 3, and the quantitative results (average values) are shown in Table 2 below.

如表2所示,於實施例1之螢光體中,確認Mg及氧之混入為檢測極限以下。又,對於實施例1之螢光體進行TOF-SIMS分析,結果未確認到含有硼(B)。根據以上之結果,將(Sr,Eu):Al:Si:N之比率設為1:1:4:7而實施單晶構造解析。對於該所獲得之單晶實施單晶構造解析,如下所述般確定晶格常數、空間群、各 原子之座標。 As shown in Table 2, in the phosphor of Example 1, it was confirmed that the mixing of Mg and oxygen was below the detection limit. Further, the TOF-SIMS analysis of the phosphor of Example 1 revealed that boron (B) was not contained. From the above results, the single crystal structure analysis was carried out by setting the ratio of (Sr, Eu):Al:Si:N to 1:1:4:7. For the single crystal structure analysis of the obtained single crystal, the lattice constant, the space group, and each are determined as follows. The coordinates of the atom.

[結晶構造解析] [Crystal Structure Analysis]

可根據藉由實施例1之單晶X射線繞射所獲得之基本反射,指數化為簡單晶格(P晶格a=8.1031(5)Å,b=9.0936(7)Å,c=8.9797(5)Å,β=111.6221(17)°)。再者,括號內之數字表示標準偏差。又,根據消光法則(extinction rule)對所獲得之基本反射之反射點進行研究,結果可使用此次之結晶而獲得結晶構造模型之空間群為P21。將該等解析結果彙總於表3。 The basic reflection obtained by the single crystal X-ray diffraction of Example 1 can be indexed into a simple lattice (P lattice a = 8.031 (5) Å, b = 9.0936 (7) Å, c = 8.9797 ( 5) Å, β = 111.6221 (17) °). Furthermore, the numbers in parentheses indicate the standard deviation. Further, the reflection point of the obtained basic reflection is studied according to the extinction rule, and as a result, the space group obtained by using the crystal of this time to obtain the crystal structure model is P2 1 . The analysis results are summarized in Table 3.

又,根據組成分析之結果,將Si/Al之部位假定為0.8/0.2之比率而設為此次之原子座標。又,推測Eu於結晶構造內將Sr部位置換一部分。將所獲得之原子座標之結果示於表4。再者,括號內之數字表示標準偏差。 Further, based on the result of the composition analysis, the Si/Al portion was assumed to be a ratio of 0.8/0.2 and was set as the atomic coordinate of the current time. Further, it is presumed that Eu replaces a part of the Sr site in the crystal structure. The results of the obtained atomic coordinates are shown in Table 4. Furthermore, the numbers in parentheses indicate the standard deviation.

進而,根據進行構造解析所獲得之座標而模擬X射線繞射圖案,參考組成分析結果及由電子密度所算出之組成比率,將實施例1中所獲得之螢光體之化學組成確定為Sr0.97Eu0.03AlSi4N7Further, the X-ray diffraction pattern was simulated based on the coordinates obtained by the structural analysis, and the chemical composition of the phosphor obtained in Example 1 was determined to be Sr 0.97 with reference to the composition analysis result and the composition ratio calculated from the electron density. Eu 0.03 AlSi 4 N 7 .

將藉由對實施例1之螢光體之單晶進行構造解析而獲得之晶格常數設為初始值,根據圖1之XRD圖案將製成粉末狀之實施例1之螢光體之晶格常數進行精密化,將所得之結果示於表5。確認獲得與藉由單晶X射線繞射所獲得之晶格常數大致一致之值,每個結晶之偏差較少。 The lattice constant obtained by structural analysis of the single crystal of the phosphor of Example 1 was set to an initial value, and the crystal lattice of the phosphor of Example 1 was powdered according to the XRD pattern of FIG. The constant was refined, and the results obtained are shown in Table 5. It was confirmed that a value substantially coincident with the lattice constant obtained by diffraction of single crystal X-rays was obtained, and the variation per crystal was small.

進而,對於實施例1之螢光體,將比較藉由透過法所測得之粉末X射線繞射圖案與藉由單晶構造解析所確定之結晶構造進行模擬而獲得之圖案者示於圖4。 Further, with respect to the phosphor of Example 1, a pattern obtained by simulating a powder X-ray diffraction pattern measured by a transmission method and a crystal structure determined by single crystal structure analysis is shown in FIG. .

於測定時,為了抑制選擇配向之影響,將實施例1之螢光體裝入至毛細管中,於測定時使毛細管旋轉而實施測定。根據該測定結果,可確認藉由單晶構造解析所確定之結晶構造為實施例1之螢光體。又,若與藉由反射法所測得之圖4之圖案進行比較,則一部分波峰之強度比發生變化,暗示源自結晶之選擇配向之影響。 At the time of measurement, in order to suppress the influence of the selective alignment, the phosphor of Example 1 was placed in a capillary tube, and the capillary was rotated at the time of measurement to carry out measurement. From the measurement results, it was confirmed that the crystal structure determined by the single crystal structure analysis was the phosphor of Example 1. Further, when compared with the pattern of Fig. 4 measured by the reflection method, the intensity ratio of a part of the peak changes, suggesting the influence of the selective alignment derived from the crystal.

將實施例1之螢光體之激發-發光光譜之測定結果示於圖5。激發光譜係監控540nm之發光,發光光譜係於450nm下激發時之測定結果。可確認實施例1之螢光體顯示出發光波峰波長541nm、半值寬66nm之發光光譜,顯示出綠色之發光。又,顯示出如下激發光譜:於460nm下具有波峰且顯示出可於300nm至480nm之廣泛波長範圍內激發。 The measurement results of the excitation-luminescence spectrum of the phosphor of Example 1 are shown in Fig. 5 . The excitation spectrum was monitored for luminescence at 540 nm, and the luminescence spectrum was measured at 450 nm. It was confirmed that the phosphor of Example 1 exhibited an emission spectrum having an emission peak wavelength of 541 nm and a half-value width of 66 nm, and showed green light emission. Further, an excitation spectrum was shown which had a peak at 460 nm and exhibited excitation in a wide wavelength range of 300 nm to 480 nm.

(比較例1) (Comparative Example 1)

使用Sr3N2(Shellac公司製造)、EuN(Shellac公司製造)、Si3N4(宇部興產公司製造)、AlN(Tokuyama公司製造)、Al2O3(RARE METALLIC公司製造)作為螢光體原料,如下所述般製備螢光體。以成為表6所示之各添加組成及各重量之方式利用電子天平稱量上 述原料,並放入至氧化鋁研缽中,進行粉碎及混合直至變得均勻。該等操作係於充滿氮氣之手套箱中進行。 Sr 3 N 2 (manufactured by Shellac Co., Ltd.), EuN (manufactured by Shellac Co., Ltd.), Si 3 N 4 (manufactured by Ube Industries, Ltd.), AlN (manufactured by Tokuyama Co., Ltd.), and Al 2 O 3 (manufactured by RARE METALLIC Co., Ltd.) were used as the fluorescent material. The bulk material was prepared as described below. The raw materials were weighed by an electronic balance so as to have the respective addition compositions and weights shown in Table 6, and placed in an alumina mortar to be pulverized and mixed until uniform. These operations were carried out in a glove box filled with nitrogen.

自所獲得之原料混合粉末稱量約1.5g,將其直接填充至氮化硼製坩堝中。將該坩堝放置於真空加壓煅燒爐內。繼而,減壓至8×10-3Pa以下後,自室溫真空加熱至800℃。於達到800℃時,於該溫度下維持並導入高純度氮氣(99.9995%)5分鐘直至爐內壓力成為0.85MPa。於導入高純度氮氣後,一面將爐內壓力保持為0.85MPa,一面進而以升溫速度20℃/分鐘升溫至1600℃,並保持2小時。進而,加熱至1850℃,於達到1850℃時維持6小時。於煅燒後冷卻至1200℃,繼而放置冷卻。其後,將產物壓碎,而獲得(Sr0.97Eu0.03)5Si21Al5O2N35所表示之比較例1之螢光體。 About 1.5 g of the raw material mixed powder obtained was weighed and directly filled into a boron nitride crucible. The crucible was placed in a vacuum pressurized calciner. Then, after depressurizing to 8 × 10 -3 Pa or less, it was heated from room temperature to 800 ° C under vacuum. When the temperature reached 800 ° C, high-purity nitrogen gas (99.9995%) was maintained and introduced at this temperature for 5 minutes until the pressure in the furnace became 0.85 MPa. After introducing high-purity nitrogen gas, the pressure in the furnace was maintained at 0.85 MPa, and the temperature was further raised to 1600 ° C at a temperature increase rate of 20 ° C /min, and held for 2 hours. Further, it was heated to 1850 ° C and maintained at 1850 ° C for 6 hours. After calcination, it was cooled to 1200 ° C and then left to cool. Thereafter, the product was crushed to obtain a phosphor of Comparative Example 1 represented by (Sr 0.97 Eu 0.03 ) 5 Si 21 Al 5 O 2 N 35 .

[溫度特性之測定結果] [Measurement result of temperature characteristics]

測定關於實施例1中所獲得之螢光體,以及比較例1中所獲得之螢光體之溫度特性。於照射450nm之波長之光之情形時的發光光譜中,將相對於25℃下之發光波峰強度值之各溫度下之相對強度(%)示於圖6及下述表7。 The temperature characteristics of the phosphor obtained in Example 1 and the phosphor obtained in Comparative Example 1 were measured. In the luminescence spectrum in the case of irradiating light having a wavelength of 450 nm, the relative intensity (%) at each temperature with respect to the luminescence peak intensity value at 25 ° C is shown in Fig. 6 and Table 7 below.

如圖6及表7所示,確認實施例1之螢光體與比較例1中所獲得之螢光體相比,溫度特性良好,尤其是設為高溫時之亮度之維持率較高。更具體而言,如表7所示,實施例1之螢光體與習知之螢光體相比,於200℃等在LED中使用之情形時所達到之溫度區域中,具有溫度特性提高將近20點之極其顯著之效果。 As shown in FIG. 6 and Table 7, it was confirmed that the phosphor of Example 1 has better temperature characteristics than the phosphor obtained in Comparative Example 1, and in particular, the luminance retention rate at a high temperature is high. More specifically, as shown in Table 7, the phosphor of Example 1 has a temperature characteristic improvement in the temperature region reached when it is used in an LED at 200 ° C or the like as compared with the conventional phosphor. The extremely remarkable effect of 20 points.

[實施例2~4] [Examples 2 to 4]

於實施例1中,以下述表8所示之方式變更原料之各重量,及將Mg3N2之添加量自0.43g變更為0.22g,除此以外,以與實施例1相同之方式進行合成而獲得實施例2~4之螢光體。 In the same manner as in Example 1, except that the weight of the raw material was changed in the manner shown in the following Table 8, and the amount of Mg 3 N 2 was changed from 0.43 g to 0.22 g, the same procedure as in Example 1 was carried out. The phosphors of Examples 2 to 4 were synthesized.

對實施例2~4之螢光體利用XRD進行測定。其中將對實施例2及4之螢光體利用XRD進行測定所得之結果示於圖7。可確認實施例2~4之螢光體獲得具有與實施例1之螢光體相同之結晶構造之相。又,根據實施例2、4之螢光體之粉末XRD圖案,對於具有與實施例1相同之結晶構造之相將各晶格常數、單位晶格 體積進行精密化,將所得之結果示於表9。 The phosphors of Examples 2 to 4 were measured by XRD. The results of measuring the phosphors of Examples 2 and 4 by XRD are shown in Fig. 7. It was confirmed that the phosphors of Examples 2 to 4 obtained a phase having the same crystal structure as that of the phosphor of Example 1. Further, according to the powder XRD patterns of the phosphors of Examples 2 and 4, the respective lattice constants and unit lattices were obtained for the phases having the same crystal structure as in Example 1. The volume was refined, and the results obtained are shown in Table 9.

又,於表10中彙總有對實施例4之螢光體進行XRD測定時區域1~5中最強波峰之波峰強度(I)(其中,於區域3中最強波峰強度(Imax)除外)相對於最強波峰強度(Imax)的比(I/Imax)。再者,於區域4中,關於兩個波峰強度I4a與I4b,分別記載相對於最強波峰強度(Imax)之比。 Further, in Table 10, the peak intensity (I) of the strongest peak in the regions 1 to 5 (excluding the strongest peak intensity (I max ) in the region 3) in the region 1 to 5 when the XRD measurement of the phosphor of Example 4 is performed is summarized. The ratio of the strongest peak intensity (I max ) (I/I max ). Further, in the region 4, the ratio of the two peak intensities I 4a and I 4b to the strongest peak intensity (I max ) is described.

進而,將對實施例2~4之螢光體利用EPMA進行測定所得之Sr:Ca:Al:Si之原子比及Ca之置換量示於表11。 Further, the atomic ratio of Sr:Ca:Al:Si and the substitution amount of Ca obtained by measuring the phosphors of Examples 2 to 4 by EPMA are shown in Table 11.

如表9~11所示,實施例2~4之螢光體獲得與實施 例1之螢光體相同之結晶相。由此確認,獲得具有與實施例1相同之結晶構造且將構造內之Sr之一部分置換為Ca之螢光體。進而,對利用400nm之光激發實施例2~4之螢光體時之發光光譜進行測定。將實施例2~4之螢光體之發光光譜彙總於圖8,關於發光波峰波長、半值寬、色度彙總於表12。如表12所示,得知藉由將Sr之一部分置換為Ca,可調整發光色。 As shown in Tables 9 to 11, the phosphors of Examples 2 to 4 were obtained and implemented. The crystal phase of the phosphor of Example 1 was the same. From this, it was confirmed that a phosphor having the same crystal structure as in Example 1 and replacing a part of Sr in the structure with Ca was obtained. Further, the luminescence spectrum when the phosphors of Examples 2 to 4 were excited by light of 400 nm was measured. The luminescence spectra of the phosphors of Examples 2 to 4 are summarized in Fig. 8, and the luminescence peak wavelength, half value width, and chromaticity are summarized in Table 12. As shown in Table 12, it was found that the luminescent color can be adjusted by replacing one part of Sr with Ca.

[實施例5、6] [Examples 5 and 6]

於實施例1中,以下述表13所示之方式變更原料及原料之各重量,及將「於2080℃下維持」變更為「於2000℃下維持」,將Mg3N2之添加量自0.43g變更為0.22g,除此以外,以與實施例1相同之方式進行合成而獲得實施例5、6之螢光體。 In Example 1, the weights of the raw materials and the raw materials were changed in the manner shown in Table 13 below, and the "maintaining at 2080 ° C" was changed to "maintained at 2000 ° C", and the amount of Mg 3 N 2 was added. The phosphors of Examples 5 and 6 were obtained by the same procedure as in Example 1 except that 0.43 g was changed to 0.22 g.

對實施例5及6之螢光體利用XRD進行測定。其中將對實施例5之螢光體利用XRD進行測定所得之結果示於圖9。可確認實施例5之螢光體獲得具有與實施例1之螢光體相同之結晶構造之相。又,根據實施例5之螢光體之粉末XRD圖案,對於具有 與實施例1相同之結晶構造之相將各晶格常數、單位晶格體積進行精密化,將所得之結果示於表14。 The phosphors of Examples 5 and 6 were measured by XRD. The result of measuring the phosphor of Example 5 by XRD is shown in FIG. It was confirmed that the phosphor of Example 5 obtained a phase having the same crystal structure as that of the phosphor of Example 1. Further, according to the powder XRD pattern of the phosphor of Example 5, The phase of the same crystal structure as in Example 1 was corrected for each lattice constant and unit lattice volume, and the results obtained are shown in Table 14.

又,於表15中彙總有對實施例5之螢光體進行XRD測定時區域1~5中最強波峰之波峰強度(I)(其中,於區域3中最強波峰強度(Imax)除外)相對於最強波峰強度(Imax)的比(I/Imax)。再者,於區域4中,關於兩個波峰強度I4a與I4b,分別記載相對於最強波峰強度(Imax)之比。 Further, in Table 15, the peak intensity (I) of the strongest peak in the regions 1 to 5 in the XRD measurement of the phosphor of Example 5 is excluded (excluding the strongest peak intensity (I max ) in the region 3). The ratio of the strongest peak intensity (I max ) (I/I max ). Further, in the region 4, the ratio of the two peak intensities I 4a and I 4b to the strongest peak intensity (I max ) is described.

進而,將對實施例5、6之螢光體利用EDX進行測定所得之Sr:Ba:Al:Si之原子比及Ba之置換量示於表16。 Further, the atomic ratio of Sr:Ba:Al:Si and the substitution amount of Ba obtained by measuring the phosphors of Examples 5 and 6 by EDX are shown in Table 16.

如表14~16所示,實施例5及6之螢光體獲得與實 施例1相同之結晶相。由此確認,獲得具有與實施例1之螢光體相同之結晶構造,且將構造內之Sr之一部分置換為Ba之螢光體。進而,對利用400nm之光激發實施例5及6之螢光體時之發光光譜進行測定。將實施例5之螢光體之發光光譜彙總於圖10,關於發光波峰波長、半值寬、色度彙總於表17。如表17所示,得知藉由將Sr之一部分置換為Ba,可調整發光色。 As shown in Tables 14 to 16, the phosphors of Examples 5 and 6 were obtained and obtained. The same crystalline phase of Example 1 was used. From this, it was confirmed that a crystal structure having the same crystal structure as that of the phosphor of Example 1 was obtained, and a part of Sr in the structure was replaced with a phosphor of Ba. Further, the luminescence spectrum when the phosphors of Examples 5 and 6 were excited by light of 400 nm was measured. The luminescence spectrum of the phosphor of Example 5 is summarized in Fig. 10, and the luminescence peak wavelength, half value width, and chromaticity are summarized in Table 17. As shown in Table 17, it was found that the luminescent color can be adjusted by substituting a part of Sr with Ba.

[實施例7、8] [Examples 7, 8]

於實施例1中,以下述表18所示之方式變更原料及原料之各重量,及將「於2080℃下維持」變更為「於2000℃下維持」,將Mg3N2之添加量自0.43g變更為0.22g,除此以外,以與實施例1相同之方式進行合成而獲得實施例7及8之螢光體。 In the first embodiment, the weights of the raw materials and the raw materials were changed as shown in the following Table 18, and the "maintained at 2080 ° C" was changed to "maintained at 2000 ° C", and the amount of Mg 3 N 2 was added. The phosphors of Examples 7 and 8 were obtained by the same procedure as in Example 1 except that 0.43 g was changed to 0.22 g.

對實施例7及8之螢光體利用XRD進行測定。其中將對實施例7之螢光體利用XRD進行測定所得之結果示於圖11。可確認實施例7及8之螢光體獲得具有與實施例1之螢光體相同之結晶構造之相。又,根據實施例7之螢光體之粉末XRD圖案,對於具有與實施例1相同之結晶構造之相將各晶格常數、單位晶格體 積進行精密化,將所得之結果示於表19。 The phosphors of Examples 7 and 8 were measured by XRD. The result of measuring the phosphor of Example 7 by XRD is shown in Fig. 11 . It was confirmed that the phosphors of Examples 7 and 8 obtained a phase having the same crystal structure as that of the phosphor of Example 1. Further, according to the powder XRD pattern of the phosphor of Example 7, each lattice constant and unit lattice were obtained for the phase having the same crystal structure as in Example 1. The product was refined, and the results obtained are shown in Table 19.

又,於表20中彙總有對實施例7之螢光體進行XRD測定時區域1~5中最強波峰之波峰強度(I)(其中,於區域3中最強波峰強度(Imax)除外)相對於最強波峰強度(Imax)的比(I/Imax)。再者,於區域4中,關於兩個波峰強度I4a與I4b,分別記載相對於最強波峰強度(Imax)之比。 Further, in Table 20, the peak intensity (I) of the strongest peak in the regions 1 to 5 in the XRD measurement of the phosphor of Example 7 (excluding the strongest peak intensity (I max ) in the region 3) is relatively The ratio of the strongest peak intensity (I max ) (I/I max ). Further, in the region 4, the ratio of the two peak intensities I 4a and I 4b to the strongest peak intensity (I max ) is described.

進而,將對實施例7及8之螢光體利用EPMA進行測定所得之Sr:La:Al:Si之原子比及La之置換量示於表21。 Further, the atomic ratio of Sr:La:Al:Si and the substitution amount of La obtained by measuring the phosphors of Examples 7 and 8 by EPMA are shown in Table 21.

如表19~21所示,實施例7及8之螢光體獲得與實施例1相同之結晶相。由此確認,獲得具有與實施例1相同之結晶 構造且將構造內之Sr之一部分置換為La之螢光體。進而,對利用400nm之光激發實施例7及8之螢光體時之發光光譜進行測定。將實施例7及8之螢光體之發光光譜彙總於圖12,關於發光波峰波長、半值寬、色度彙總於表22。如表22所示,得知藉由將Sr之一部分置換為La,可調整發光色。 As shown in Tables 19 to 21, the phosphors of Examples 7 and 8 obtained the same crystal phase as in Example 1. From this, it was confirmed that the same crystal having the same as that of Example 1 was obtained. A portion of Sr within the structure is constructed and replaced with a phosphor of La. Further, the luminescence spectrum when the phosphors of Examples 7 and 8 were excited by light of 400 nm was measured. The luminescence spectra of the phosphors of Examples 7 and 8 are summarized in Fig. 12, and the luminescence peak wavelength, half value width, and chromaticity are summarized in Table 22. As shown in Table 22, it was found that the luminescent color can be adjusted by replacing one part of Sr with La.

<發光裝置之製造> <Manufacture of light-emitting device> [實施例9] [Embodiment 9]

首先製備含有螢光體之組成物。將二甲基系聚矽氧樹脂、薰製二氧化矽及實施例1中所獲得之螢光體,利用攪拌消泡裝置進行混合,而製備含有螢光體之組成物。再者,各構件之量比係以下述發光裝置所顯示之發光光譜之色度成為CIEy=0.100~0.150之方式進行調整。 First, a composition containing a phosphor is prepared. The dimethyl-based polyfluorene oxide resin, the oxidized cerium oxide, and the phosphor obtained in Example 1 were mixed by a stirring defoaming device to prepare a composition containing a phosphor. Further, the amount ratio of each member is adjusted such that the chromaticity of the luminescence spectrum displayed by the illuminating device described below becomes CIEy=0.100 to 0.150.

繼而,使用上述所製備之含有螢光體之組成物而製造發光裝置。使用手動移液管,將上述所獲得之含有螢光體之組成物注液至安裝有35mil見方之InGaN系藍色LED之5050尺寸(5mm見方)之陶瓷封裝中。其後,將該發光裝置於100℃下保持1小時,繼而於150℃下保持5小時,藉此使含有螢光體之組成物硬化而獲得發光裝置。對於所獲得之發光裝置,藉由以下所記載之點燈試驗而評價其耐久性。 Then, a light-emitting device was produced using the composition containing the phosphor prepared above. The phosphor-containing composition obtained above was injected into a 5050-size (5 mm square) ceramic package equipped with a 35 mil square InGaN blue LED using a manual pipette. Thereafter, the light-emitting device was kept at 100 ° C for 1 hour, and then held at 150 ° C for 5 hours, whereby the composition containing the phosphor was cured to obtain a light-emitting device. The durability of the obtained light-emitting device was evaluated by the lighting test described below.

[點燈試驗] [lighting test]

對發光裝置通入350mA之電流,利用具備積分球之分光測定裝置測定發光光譜。繼而,於設定為85℃之恆溫槽內將發光裝置以驅動電流150mA進行連續通電,於自通電開始起20小時、100小時、500小時、1000小時之各時點自恆溫槽中取出發光裝置,並以與時刻0之情形時相同之方式測定發光光譜。利用根據各經過時間後所獲得之發光光譜而算出之色度座標y與時刻0之色度座標y之差(△y),對實施例1之螢光體之耐久性進行評價。將該結果示於表23。 A current of 350 mA was applied to the light-emitting device, and the luminescence spectrum was measured by a spectroscopic measuring device equipped with an integrating sphere. Then, the light-emitting device is continuously energized at a driving current of 150 mA in a constant temperature bath set at 85 ° C, and the light-emitting device is taken out from the constant temperature bath at each time point of 20 hours, 100 hours, 500 hours, and 1000 hours from the start of energization, and The luminescence spectrum was measured in the same manner as in the case of time 0. The durability of the phosphor of Example 1 was evaluated by the difference (Δy) between the chromaticity coordinates y calculated from the luminescence spectra obtained after each elapsed time and the chromaticity coordinates y at time 0. The results are shown in Table 23.

如表23所示,使用本發明之第一實施態樣之螢光體之發光裝置其△y非常小。即,使用本發明之第一實施態樣之螢光體之發光裝置其耐久性優異。 As shown in Table 23, the light-emitting device using the phosphor of the first embodiment of the present invention has a very small Δy. That is, the light-emitting device using the phosphor of the first embodiment of the present invention is excellent in durability.

<關於發光裝置之模擬> <About simulation of light-emitting device>

將上述實施例1之螢光體、SCASN螢光體BR102/Q(三菱化學公司製造),及藍色LED(發光波峰波長451nm)進行組合而製作色溫3000K、4000K、5000K之發光裝置,對於所製作之發光裝置模擬白色LED光譜。 The phosphor of the first embodiment, the SCASN phosphor BR102/Q (manufactured by Mitsubishi Chemical Corporation), and the blue LED (luminous peak wavelength of 451 nm) were combined to produce a light-emitting device having color temperatures of 3000 K, 4000 K, and 5000 K. The fabricated illuminator simulates a white LED spectrum.

具體而言,分別準備藍色LED之實測資料,及自實 施例與上述螢光體於波長450nm激發時之實測發光光譜減去激發光源之光譜所得之發光光譜。將藍色LED之強度與對各螢光體之發光波峰強度以發光裝置顯示色溫3000K、4000K、5000K之方式乘以任意比所得之光譜相加,作為一個發光光譜而計算,將所得者作為白色光譜而導出。 Specifically, separately prepare the measured data of the blue LED, and self-reality The luminescence spectrum obtained by subtracting the spectrum of the excitation source from the measured luminescence spectrum of the above-mentioned phosphor when excited at a wavelength of 450 nm. The intensity of the blue LED and the intensity of the luminescence peak of each phosphor are multiplied by an arbitrary ratio by the color temperature of the illuminating device to display the color temperature of 3000K, 4000K, and 5000K, and are calculated as one luminescence spectrum, and the obtained person is regarded as white. Exported from the spectrum.

各光學特性評價項目之計算方法如下所述。 The calculation method of each optical characteristic evaluation item is as follows.

(i)根據JIS Z8724:1997(標題:色之測定方法-光源色-)而計算CIE 1931色度圖上之xy色度座標。 (i) The xy chromaticity coordinates on the CIE 1931 chromaticity diagram are calculated in accordance with JIS Z8724: 1997 (Title: Method of Color Measurement - Source Color -).

(ii)根據上述(i)之結果而轉換為CIE 1960 UCS色度圖上之uv色度座標後,根據JIS Z8725:1999(標題:光源之分佈溫度及色溫、相關色溫之測定方法)而計算相關色溫(Kelvin)及Duv。 (ii) converted to the uv chromaticity coordinate on the CIE 1960 UCS chromaticity diagram according to the result of (i) above, and calculated according to JIS Z8725:1999 (title: measurement method of distribution temperature and color temperature of light source, correlation color temperature) Correlated color temperature (Kelvin) and Duv.

(iii)根據JIS Z8726:1990(標題:光源之演色性評價方法),根據白色光譜而計算演色評價數(Ra,R1~R15)。 (iii) According to JIS Z8726: 1990 (title: color rendering evaluation method of light source), the color evaluation number (Ra, R1 to R15) is calculated from the white spectrum.

[實施例10] [Embodiment 10]

實施例10之發光裝置之白色LED光譜係藉由以顯示色溫3000K之方式調整各螢光體之發光光譜強度而獲得者。將實施例10之發光裝置之白色LED光譜示於圖13。Ra顯示78。又,將藉由455nm激發而激發之實施例1之螢光體之吸收效率假定為85%,將內部量子效率假定為89%,將D50假定為15.4μm時,實施例10之發光裝置之發光效率為181.2lm/W。將該等模擬之結果彙總於表24。 The white LED spectrum of the light-emitting device of Example 10 was obtained by adjusting the intensity of the emission spectrum of each of the phosphors so as to display a color temperature of 3000K. The white LED spectrum of the light-emitting device of Example 10 is shown in Fig. 13. Ra shows 78. Further, the absorption efficiency of the phosphor of Example 1 excited by excitation at 455 nm was assumed to be 85%, the internal quantum efficiency was assumed to be 89%, and the D50 was assumed to be 15.4 μm, and the luminescence of the illuminating device of Example 10 was obtained. The efficiency is 181.2 lm / W. The results of these simulations are summarized in Table 24.

[實施例11] [Example 11]

實施例11之發光裝置之白色LED光譜係藉由以顯示色溫4000K之方式調整各螢光體之發光光譜強度而獲得者。將實施例11之發光裝置之白色LED光譜示於圖14。Ra顯示76。又,將藉由455nm激發而激發之實施例1之螢光體之吸收效率假定為85%,將內部量子效率假定為89%,將D50假定為15.4μm時,實施例11之發光裝置之發光效率為192.6lm/W。將該等模擬之結果彙總於表24。 The white LED spectrum of the light-emitting device of Example 11 was obtained by adjusting the intensity of the emission spectrum of each of the phosphors so as to display a color temperature of 4000K. The white LED spectrum of the light-emitting device of Example 11 is shown in Fig. 14. Ra shows 76. Further, the absorption efficiency of the phosphor of Example 1 excited by excitation at 455 nm was assumed to be 85%, the internal quantum efficiency was assumed to be 89%, and the D50 was assumed to be 15.4 μm, and the luminescence of the illuminating device of Example 11 was obtained. The efficiency is 192.6 lm/W. The results of these simulations are summarized in Table 24.

[實施例12] [Embodiment 12]

實施例12之發光裝置之白色LED光譜係藉由以顯示色溫5000K之方式調整各螢光體之發光光譜強度而獲得者。將實施例12之發光裝置之白色LED光譜示於圖15。Ra顯示75。又,將藉由455nm激發而激發之實施例1之螢光體之吸收效率假定為85%,將內部量子效率假定為89%,將D50假定為15.4μm時,實施例12之發光裝置之發光效率為196.1lm/W。將該等模擬之結果彙總於表24。 The white LED spectrum of the light-emitting device of Example 12 was obtained by adjusting the intensity of the emission spectrum of each of the phosphors at a display color temperature of 5000K. The white LED spectrum of the light-emitting device of Example 12 is shown in Fig. 15. Ra shows 75. Further, the absorption efficiency of the phosphor of Example 1 excited by excitation at 455 nm was assumed to be 85%, the internal quantum efficiency was assumed to be 89%, and the D50 was assumed to be 15.4 μm, and the luminescence of the illuminating device of Example 12 was assumed. The efficiency is 196.1 lm/W. The results of these simulations are summarized in Table 24.

如表24所示,根據模擬結果顯示,包含本發明之螢光體之發光裝置其演色性較高、發光效率較高。 As shown in Table 24, according to the simulation results, the light-emitting device including the phosphor of the present invention has high color rendering property and high luminous efficiency.

[實施例13] [Example 13]

將上述實施例1之螢光體、CASN螢光體BR101/J(三菱化學公司製造)及藍色LED(發光波峰波長450nm)進行組合而製作發光裝置,對於所製作之發光裝置模擬白色LED光譜。將導出之光譜示於圖16。色度為CIEx=0.262 CIEy=0.219。又,將實施例13之發光裝置之色度範圍示於圖17。如圖17所示,使用本發明之第一實施態樣之螢光體之發光裝置由於色度範圍較廣,故而適用於例如影像顯示裝置等。 The phosphor of the first embodiment, the CASN phosphor BR101/J (manufactured by Mitsubishi Chemical Corporation), and the blue LED (luminous peak wavelength of 450 nm) were combined to prepare a light-emitting device, and the white LED spectrum was simulated for the produced light-emitting device. . The derived spectrum is shown in Fig. 16. The chromaticity is CIEx=0.262 CIEy=0.219. Further, the chromaticity range of the light-emitting device of Example 13 is shown in Fig. 17. As shown in Fig. 17, the light-emitting device using the phosphor of the first embodiment of the present invention is suitable for use in, for example, an image display device because of a wide range of chromaticity.

[實施例14] [Embodiment 14]

對於將上述實施例1之螢光體、KSF螢光體BR301/C(三菱化 學公司製造)及藍色LED(發光波峰波長450nm)進行組合而成之發光裝置模擬白色LED光譜。將導出之白色LED光譜示於圖18。發光裝置之色度為CIEx=0.260 CIEy=0.216。又,將實施例14之發光裝置之色度範圍示於圖19。如圖19所示,使用本發明之第一實施態樣之螢光體之發光裝置由於色度範圍較廣,故而適於例如影像顯示裝置等。 For the phosphor of the above Example 1, KSF phosphor BR301/C (Mitsubishi Chemical) A light-emitting device that combines a blue LED (luminous peak wavelength of 450 nm) to simulate a white LED spectrum. The derived white LED spectrum is shown in Fig. 18. The chromaticity of the illuminating device is CIEx=0.260 CIEy=0.216. Further, the chromaticity range of the light-emitting device of Example 14 is shown in Fig. 19. As shown in Fig. 19, the light-emitting device using the phosphor of the first embodiment of the present invention is suitable for, for example, an image display device or the like because of a wide range of chromaticity.

根據以上,本發明之第一實施態樣之螢光體不僅可提供色再現性良好之鮮明之發光裝置,而且亦可提供於通常使用溫度變高而發光強度降低之區域中發光強度亦更高之發光裝置。即,包含本發明之第一實施態樣之螢光體之發光裝置,以及包含該發光裝置之高品質照明裝置及液晶顯示裝置為高品質。 According to the above, the phosphor of the first embodiment of the present invention can provide not only a bright light-emitting device with good color reproducibility, but also a higher light-emitting intensity in a region where the normal use temperature is higher and the light-emitting intensity is lowered. Light emitting device. That is, the light-emitting device including the phosphor of the first embodiment of the present invention and the high-quality illumination device and the liquid crystal display device including the same are of high quality.

參照特定實施形態而詳細地說明了本發明,但熟悉本技藝者明瞭可不脫離本發明之精神及範圍而施加各種變更或修正。本申請案係基於2014年11月12日提出申請之日本專利申請案(日本專利特願2014-230149)者,其內容係作為參照而併入本文中。 The present invention has been described in detail with reference to the preferred embodiments thereof. The present application is based on Japanese Patent Application No. Hei. No. Hei. No. Hei.

Claims (8)

一種螢光體,其係包含含有M元素、A元素、Al、Si、N之單斜晶之結晶相的螢光體;其特徵在於:該結晶相之晶格常數分別滿足a軸為7.7Å≦a≦8.51Å,b軸為8.64Å≦b≦9.55Å,c軸為8.53Å≦c≦9.43Å,β角為97.6°≦β≦115.6°,(其中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素)。 A phosphor comprising a phosphor having a crystal phase of a monoclinic crystal of M element, A element, Al, Si, N; characterized in that the lattice constant of the crystal phase satisfies the a-axis of 7.7 Å, respectively. ≦a≦8.51Å, the b-axis is 8.64 Åb≦9.55Å, the c-axis is 8.53 Åc≦9.43Å, and the β angle is 97.6°≦β≦115.6°, (wherein the M element is selected from the activating element) One or more elements, and the A element means one or more elements selected from the group consisting of alkaline earth metal elements). 如請求項1之螢光體,其中,上述結晶相具有下述式[1]所表示之組成,MmAaAlbSicNd [1](上述式[1]中,M元素表示選自賦活元素中之1種以上之元素,A元素表示選自鹼土金屬元素中之1種以上之元素,m、a、b、c、d分別獨立為滿足下述式之值,0<m≦0.2 m+a=1 0.8≦b≦1.2 3.2≦c≦4.8 5.6≦d≦8.4)。 The phosphor of claim 1, wherein the crystal phase has a composition represented by the following formula [1], M m A a Al b Si c N d [1] (in the above formula [1], the M element represents One or more elements selected from the group consisting of active elements, and the A element is one or more elements selected from the group consisting of alkaline earth metal elements, and m, a, b, c, and d are each independently satisfying the value of the following formula, 0 < m ≦0.2 m+a=1 0.8≦b≦1.2 3.2≦c≦4.8 5.6≦d≦8.4). 如請求項1或2之螢光體,其中,A元素包含Ca及/或Sr。 A phosphor according to claim 1 or 2, wherein the A element comprises Ca and/or Sr. 如請求項1至3中任一項之螢光體,其中,M元素包含Eu。 The phosphor of any one of claims 1 to 3, wherein the M element comprises Eu. 如請求項1至4中任一項之螢光體,其藉由照射介於350nm以上且460nm以下之波長之激發光,而於500nm以上且560nm以下之範圍內具有發光波峰波長。 The phosphor according to any one of claims 1 to 4, which has an emission peak wavelength in a range of 500 nm or more and 560 nm or less by irradiating excitation light having a wavelength of 350 nm or more and 460 nm or less. 一種發光裝置,其特徵在於,其具備第1發光體,及藉由來自該第1發光體之光之照射而發出可見光之第2發光體,且該第2發光體包含如請求項1至5中任一項之螢光體。 A light-emitting device comprising: a first light-emitting body; and a second light-emitting body that emits visible light by irradiation of light from the first light-emitting body, wherein the second light-emitting body includes the claims 1 to 5 Any of the phosphors. 一種照明裝置,其特徵在於,其具備請求項6之發光裝置作為光源。 A lighting device characterized by comprising the light-emitting device of claim 6 as a light source. 一種影像顯示裝置,其特徵在於,其具備請求項6之發光裝置作為光源。 An image display device comprising the light-emitting device of claim 6 as a light source.
TW104137350A 2014-11-12 2015-11-12 Phosphor, light emitting device, illumination device and image display device TW201625774A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014230149 2014-11-12

Publications (1)

Publication Number Publication Date
TW201625774A true TW201625774A (en) 2016-07-16

Family

ID=55954457

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104137350A TW201625774A (en) 2014-11-12 2015-11-12 Phosphor, light emitting device, illumination device and image display device

Country Status (3)

Country Link
JP (1) JPWO2016076380A1 (en)
TW (1) TW201625774A (en)
WO (1) WO2016076380A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6418208B2 (en) 2016-08-24 2018-11-07 日亜化学工業株式会社 Nitride phosphor and light emitting device
KR20210089674A (en) * 2018-11-12 2021-07-16 덴카 주식회사 Packages and cartons containing phosphors
WO2023063251A1 (en) * 2021-10-11 2023-04-20 三菱ケミカル株式会社 Phosphor, light emitting device, lighting device, image display device and indicator lamp for vehicles
DE102022116190A1 (en) 2022-06-29 2024-01-04 Ams-Osram International Gmbh FLUORESCENT, METHOD FOR THE PRODUCTION THEREOF AND RADIATION-EMITTING COMPONENT

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005336450A (en) * 2004-04-27 2005-12-08 Matsushita Electric Ind Co Ltd Phosphor composition, method for producing the same and light-emitting device using the same phosphor composition
US8206611B2 (en) * 2005-05-24 2012-06-26 Mitsubishi Chemical Corporation Phosphor and use thereof
JP4228012B2 (en) * 2006-12-20 2009-02-25 Necライティング株式会社 Red light emitting nitride phosphor and white light emitting device using the same
JP2012046626A (en) * 2010-08-26 2012-03-08 Mitsubishi Chemicals Corp Phosphor and light-emitting device using the same
JP2012046625A (en) * 2010-08-26 2012-03-08 Mitsubishi Chemicals Corp Method of manufacturing phosphor
WO2012067130A1 (en) * 2010-11-16 2012-05-24 電気化学工業株式会社 Phosphor, and light-emitting device and use thereof

Also Published As

Publication number Publication date
JPWO2016076380A1 (en) 2017-09-14
WO2016076380A1 (en) 2016-05-19

Similar Documents

Publication Publication Date Title
US10011768B2 (en) Phosphor, light-emitting device, illumination device and image display device
JP6985704B2 (en) Fluorescent material, light emitting device, lighting device and image display device
US9890328B2 (en) Phosphor compositions and lighting apparatus thereof
TW201625774A (en) Phosphor, light emitting device, illumination device and image display device
TW201732018A (en) Phosphor, light emitting device, illumination device and image display device
JP2010196049A (en) Phosphor and method for producing the same, phosphor-containing composition, and light-emitting device, image display device and lighting device using the phosphor
JP2015078317A (en) Phosphor, method for producing the same, light-emitting device, image display device, pigment, and ultraviolet absorber
JP2017190434A (en) Fluophor, light-emitting device, luminaire and image display device
JP7400378B2 (en) Light emitting devices, lighting devices, image display devices and nitride phosphors
JP2016088970A (en) Phosphor, light emitting device, illumination device and image display device
JP2016124929A (en) Phosphor, light emitting device, illumination device and image display device
JP2016191011A (en) Phosphor, light emitting device, lighting device and image display device
JP2016124928A (en) Phosphor, light emitting device, illumination device and image display device
JP7318924B2 (en) Phosphor and light-emitting device using the same
JP2016094533A (en) Phosphor, light emitting device, illumination device and image display device
JP7144002B2 (en) Phosphor, phosphor composition using the same, and light-emitting device, lighting device, and image display device using the same
JP2016056246A (en) Phosphor, light emitting device, illumination device and image display device
WO2023063251A1 (en) Phosphor, light emitting device, lighting device, image display device and indicator lamp for vehicles
CN107810249B (en) Phosphor composition and lighting device thereof
JP2005264062A (en) Phosphor
JP2016079213A (en) Phosphor, light emitting device, illumination device and image display device
JP2023057391A (en) Phosphor
JP2023057392A (en) Light emitting device, lighting device, image display device and indicator lamp for vehicles
JP2017206599A (en) Phosphor, light emitting device, illumination device and image display device
JP2016199675A (en) Phosphor, light emitting device, illumination device and image display device