TW201614077A - Cu-Ga alloy sputtering target - Google Patents

Cu-Ga alloy sputtering target

Info

Publication number
TW201614077A
TW201614077A TW104121585A TW104121585A TW201614077A TW 201614077 A TW201614077 A TW 201614077A TW 104121585 A TW104121585 A TW 104121585A TW 104121585 A TW104121585 A TW 104121585A TW 201614077 A TW201614077 A TW 201614077A
Authority
TW
Taiwan
Prior art keywords
sputtering target
unavoidable
alloy sputtering
sputtering
target
Prior art date
Application number
TW104121585A
Other languages
Chinese (zh)
Other versions
TWI565813B (en
Inventor
Akira Yoshizawa
Masatoshi Eto
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of TW201614077A publication Critical patent/TW201614077A/en
Application granted granted Critical
Publication of TWI565813B publication Critical patent/TWI565813B/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a Cu-Ga alloy sputtering target which will not cause abnormal discharge during the high-output sputtering operation. The sputtering target is made of Cu-Ga alloy containing more than 15 at% but less than 30 at% of Ga, the remainders are Cu and unavoidable impurities, wherein the concentration of unavoidable C impurity is below 30 ppm by mass, and the concentration of unavoidable O impurity is below 50 ppm by mass. For the inclusions exposed to the sputtering surface of the target, the number density of the inclusions with equivalent diameter more than 20[mu]m is below 0.5 /mm2.
TW104121585A 2014-10-15 2015-07-03 Cu-Ga alloy sputtering target TWI565813B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014211190A JP2016079450A (en) 2014-10-15 2014-10-15 Cu-Ga alloy sputtering target

Publications (2)

Publication Number Publication Date
TW201614077A true TW201614077A (en) 2016-04-16
TWI565813B TWI565813B (en) 2017-01-11

Family

ID=55767778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104121585A TWI565813B (en) 2014-10-15 2015-07-03 Cu-Ga alloy sputtering target

Country Status (3)

Country Link
JP (1) JP2016079450A (en)
CN (1) CN105525261B (en)
TW (1) TWI565813B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6900642B2 (en) * 2016-08-26 2021-07-07 三菱マテリアル株式会社 Copper material for sputtering targets

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06299261A (en) * 1993-04-12 1994-10-25 Kobe Steel Ltd Method for cleaning copper or copper alloy
JP3864842B2 (en) * 2002-05-13 2007-01-10 住友金属工業株式会社 Method for refining molten metal
US20090065354A1 (en) * 2007-09-12 2009-03-12 Kardokus Janine K Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof
KR101290856B1 (en) * 2008-09-30 2013-07-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 High-purity copper or high-purity copper alloy sputtering target and process for manufacturing the sputtering target
JP2011089198A (en) * 2009-09-25 2011-05-06 Sumitomo Chemical Co Ltd METHOD FOR MANUFACTURING SPUTTERING TARGET CONSISTING OF Cu-Ga ALLOY
EP2684978A4 (en) * 2011-08-29 2015-01-14 Jx Nippon Mining & Metals Corp Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
JP5750393B2 (en) * 2012-03-28 2015-07-22 Jx日鉱日石金属株式会社 Cu-Ga alloy sputtering target and method for producing the same
CN103421976B (en) * 2012-05-22 2017-11-21 山阳特殊制钢株式会社 The manufacture method of the low Cu Ga series alloy powders of oxygen content, Cu Ga alloy target materials and target
JP5954196B2 (en) * 2013-01-25 2016-07-20 住友金属鉱山株式会社 Cylindrical Cu-Ga alloy sputtering target and manufacturing method thereof
JP5882248B2 (en) * 2013-03-21 2016-03-09 Ｊｘ金属株式会社 Cu-Ga alloy sputtering target, casting product for the sputtering target, and production method thereof

Also Published As

Publication number Publication date
CN105525261A (en) 2016-04-27
JP2016079450A (en) 2016-05-16
TWI565813B (en) 2017-01-11
CN105525261B (en) 2018-03-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees