TW201547076A - Structure of organic light emitting diode and manufacturing method thereof and organic metal mask - Google Patents
Structure of organic light emitting diode and manufacturing method thereof and organic metal mask Download PDFInfo
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本發明是有關於一種有機發光二極體結構,特別是有關於一種不會造成電極斷線且在製程中無須考量公差之有機發光二極體結構。The present invention relates to an organic light-emitting diode structure, and more particularly to an organic light-emitting diode structure that does not cause electrode breakage and does not require tolerances in the process.
近年來,平面顯示技術的發展不斷的推陳出新,其中有機發光二極體(organic light emitting diode,OLED),又稱為有機電激發光(organicelectroluminescence,OEL),是擁有其它平面顯示器技術不易達到的優點的新一代技術,包括省電、超薄厚度、重量輕、自發光、無視角限制、反應速度快、光電效率高、無需背光結構與彩色濾光片結構、高對比、高輝度效率、高亮度、多色及彩色(RGB)元件製作能力、使用溫度範圍廣等優點,被視為是未來最具有發展潛力的平面顯示技術之一。In recent years, the development of flat panel display technology has been continuously updated. Among them, organic light emitting diode (OLED), also known as organic electroluminescence (OEL), is an advantage that is difficult to achieve with other flat panel display technologies. New generation technology, including power saving, ultra-thin thickness, light weight, self-illumination, no viewing angle limitation, fast response speed, high photoelectric efficiency, no backlight structure and color filter structure, high contrast, high luminance efficiency, high brightness Multi-color and color (RGB) components manufacturing capabilities, a wide range of operating temperatures, etc., is considered to be one of the most promising flat display technologies in the future.
有機發光二極體可區分為正向有機發光二極體(normal OLED)及反向有機發光二極體(inverted OLED)。舉正向有機發光二極體為例,如第1圖所示,正向有機發光二極體的結構依序為陽極電極(或者是反射陽極)、電洞注入/傳輸層、發光層、電子傳輸層、電子注入層以及陰極電極於晶圓基板上。當施加電壓至陽極電極及陰極電極而使其產生電壓差時,電子及電洞會在發光層結合而產生光線L。一般而言,電洞注入/傳輸層、發光層、電子傳輸層以及電子注入層統稱為有機發光層。The organic light emitting diode can be distinguished as a positive organic light emitting diode (normal OLED) and a reverse organic light emitting diode (inverted OLED). Taking a positive organic light-emitting diode as an example, as shown in FIG. 1, the structure of the forward organic light-emitting diode is sequentially an anode electrode (or a reflective anode), a hole injection/transport layer, a light-emitting layer, and an electron. The transport layer, the electron injection layer, and the cathode electrode are on the wafer substrate. When a voltage is applied to the anode electrode and the cathode electrode to cause a voltage difference, electrons and holes are combined in the light-emitting layer to generate light L. In general, the hole injection/transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer are collectively referred to as an organic light-emitting layer.
第2圖係為習知蒸鍍有機發光層之示意圖。第2圖中的(a)圖為一有機發光層遮罩,而沿著第2圖中(a)圖的剖面線T1-T1’所得即為第2圖中(b)圖所示之有機發光層遮罩的剖面結構。一般而言,如第2圖所示,在蒸鍍有機發光層時,通常將第2圖中(a)圖所示之呈中空矩形的有機發光層遮罩設置於基板上,並藉由有機蒸鍍源將有機發光材料蒸鍍於基板及陽極電極上(其中,基板可例如為金屬間介電質層)。接著,再藉由第3圖所示之陰極電極遮罩(第3圖中(a)圖)及陰極蒸鍍源,以將具特定圖案之陰極材料蒸鍍於已製備完成之有機發光層上,而完成有機發光二極體結構的製備。Fig. 2 is a schematic view showing a conventional vapor deposition organic light-emitting layer. (a) in Fig. 2 is an organic light-emitting layer mask, and the cross-sectional line T1-T1' in the figure (a) of Fig. 2 is the organic one shown in the second figure (b). The cross-sectional structure of the luminescent layer mask. Generally, as shown in FIG. 2, when the organic light-emitting layer is vapor-deposited, the organic light-emitting layer having a hollow rectangular shape as shown in FIG. 2(a) is usually placed on the substrate, and organically The vapor deposition source vapor-deposits the organic light-emitting material on the substrate and the anode electrode (wherein the substrate may be, for example, an inter-metal dielectric layer). Then, the cathode material mask (Fig. 3(a)) and the cathode vapor deposition source shown in Fig. 3 are used to vapor-deposit a cathode material having a specific pattern on the prepared organic light-emitting layer. The preparation of the organic light emitting diode structure is completed.
然而,如第4圖所示,在上述習知有機發光二極體結構的製程中,由於陰極電極的厚度通常較薄,因此可能會因陰極襯墊與金屬間介電質層的高度差而使得陰極電極在區域B發生斷線。或者,如第5圖所示,假使將有機發光層的厚度提高(例如為約1000埃)並覆蓋於部分的陰極襯墊上而使得陰極電極不會發生斷線的問題。但是,在有機發光二極體的製備過程中,技術人員卻必須額外考量有機發光層遮罩及陰極電極遮罩與陰極襯墊的公差以及陰極襯墊的尺寸,無疑增加製程的繁雜性。However, as shown in FIG. 4, in the above-described process of the conventional organic light emitting diode structure, since the thickness of the cathode electrode is generally thin, the height difference between the cathode liner and the intermetal dielectric layer may be caused. The cathode electrode is broken in the region B. Alternatively, as shown in Fig. 5, if the thickness of the organic light-emitting layer is increased (for example, about 1000 angstroms) and covered on a portion of the cathode liner, the cathode electrode does not have a problem of disconnection. However, in the preparation process of the organic light-emitting diode, the technician must additionally consider the tolerance of the organic light-emitting layer mask and the cathode electrode mask and the cathode gasket, and the size of the cathode liner, which undoubtedly increases the complexity of the process.
有鑑於上述習知技藝之問題,本發明之目的在於提供一種有機發光二極體結構,以解決習知有機發光二極體結構可能會造成陰極電極斷線以及有機發光層遮罩及陰極電極遮罩與陰極襯墊的公差的問題。In view of the above problems in the prior art, an object of the present invention is to provide an organic light emitting diode structure to solve the problem that the conventional organic light emitting diode structure may cause the cathode electrode to be broken, the organic light emitting layer mask and the cathode electrode to be covered. The problem of tolerances between the cover and the cathode gasket.
根據前述目的,本發明提出一種有機發光二極體結構,包含:基板;第一導電層及導電襯墊,分別設置於基板上;有機發光層,設置於第一導電層上且具有複數側,其中複數側分別具有至少一凹陷區及一凸出區;以及第二導電層,設置於有機發光層上。其中,有機發光層之凸出區覆蓋部分之導電襯墊,且第二導電層經由有機發光層之凹陷區以及有機發光層之部分之凸出區而覆蓋導電襯墊,使得第二導電層電性連接導電襯墊。According to the foregoing objective, the present invention provides an organic light emitting diode structure comprising: a substrate; a first conductive layer and a conductive pad respectively disposed on the substrate; and an organic light emitting layer disposed on the first conductive layer and having a plurality of sides The plurality of sides respectively have at least one recessed area and a protruding area; and the second conductive layer is disposed on the organic light emitting layer. Wherein, the protruding region of the organic light emitting layer covers a portion of the conductive pad, and the second conductive layer covers the conductive pad via the recessed region of the organic light emitting layer and a protruding portion of the portion of the organic light emitting layer, so that the second conductive layer is electrically Electrically connected conductive pads.
其中,第一導電層為陽極電極且第二導電層為陰極電極,或者第一導電層為陰極電極且第二導電層為陽極電極。Wherein, the first conductive layer is an anode electrode and the second conductive layer is a cathode electrode, or the first conductive layer is a cathode electrode and the second conductive layer is an anode electrode.
其中,有機發光層包括依序排列之電洞注入層、電洞傳輸層、發光層、電子傳輸層以及電子注入層。The organic light-emitting layer includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially arranged.
其中,基板為金屬間介電質層。Wherein, the substrate is an inter-metal dielectric layer.
本發明更提出一種有機層金屬遮罩,用以蒸鍍如上述有機發光二極體結構中之有機發光層。The invention further provides an organic layer metal mask for vapor-depositing the organic light-emitting layer in the organic light-emitting diode structure as described above.
此外,本發明也提出一種有機發光二極體結構之製造方法,包含:提供基板;將第一導電層及導電襯墊分別設置於基板上;設置有機發光層於第一導電層上,其中有機發光層具有複數側,且複數側分別具有至少一凹陷區及一凸出區;以及設置第二導電層於有機發光層上。其中,有機發光層之凸出區覆蓋部分之導電襯墊,且第二導電層經由有機發光層之凹陷區 以及有機發光層之部分之凸出區而 覆蓋導電襯墊,使得第二導電層電性連接導電襯墊。In addition, the present invention also provides a method for fabricating an organic light emitting diode structure, comprising: providing a substrate; respectively, disposing the first conductive layer and the conductive pad on the substrate; and disposing the organic light emitting layer on the first conductive layer, wherein the organic The light emitting layer has a plurality of sides, and the plurality of sides respectively have at least one recessed area and a protruding area; and the second conductive layer is disposed on the organic light emitting layer. Wherein, the protruding region of the organic light emitting layer covers a portion of the conductive pad, and the second conductive layer covers the conductive pad via the recessed region of the organic light emitting layer and a protruding portion of the portion of the organic light emitting layer, so that the second conductive layer is electrically Electrically connected conductive pads.
其中,第一導電層為陽極電極且第二導電層為陰極電極,或者第一導電層為陰極電極且第二導電層為陽極電極。Wherein, the first conductive layer is an anode electrode and the second conductive layer is a cathode electrode, or the first conductive layer is a cathode electrode and the second conductive layer is an anode electrode.
其中,有機發光層包括依序排列之電洞注入層、電洞傳輸層、發光層、電子傳輸層以及電子注入層。The organic light-emitting layer includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially arranged.
承上所述,依本發明之有機發光二極體結構及其製備方法以及有機層金屬遮罩,其可具有一或多個下述優點:According to the above, the organic light emitting diode structure, the preparation method thereof and the organic layer metal mask according to the present invention may have one or more of the following advantages:
(1) 本發明之有機發光二極體結構及其製造方法,可避免習知有機發光二極體結構可能會造成陰極電極斷線的問題,且無須考量 有機層金屬遮罩及陰極電極遮罩與陰極襯墊的公差以及陰極襯墊的尺寸,進而可減小 有機發光二極體結構的尺寸,達到窄邊寬的目的 。(1) The organic light-emitting diode structure of the present invention and the manufacturing method thereof can avoid the problem that the organic light-emitting diode structure may cause the cathode electrode to be broken, and it is not necessary to consider the organic layer metal mask and the cathode electrode mask. The tolerance to the cathode liner and the size of the cathode liner, in turn, can reduce the size of the organic light-emitting diode structure to achieve narrow side width.
(2) 本發明之有機發光二極體結構及其製造方法,由於有機發光二極體結構具備特定之圖案,因此完全無須考量製程中遮罩與基板間的公差問題。(2) The organic light-emitting diode structure of the present invention and the method of manufacturing the same, since the organic light-emitting diode structure has a specific pattern, it is not necessary to consider the tolerance problem between the mask and the substrate in the process.
(3) 本發明之有機層金屬遮罩,可用以製備上述有機發光二極體結構中的有機發光層。(3) The organic layer metal mask of the present invention can be used to prepare an organic light-emitting layer in the above organic light-emitting diode structure.
10‧‧‧基板10‧‧‧Substrate
20‧‧‧第一導電層20‧‧‧First conductive layer
30‧‧‧導電襯墊30‧‧‧Electrical gasket
40‧‧‧有機發光層40‧‧‧Organic light-emitting layer
50‧‧‧第二導電層50‧‧‧Second conductive layer
L‧‧‧光線L‧‧‧Light
T1-T1’、T2-T2’、T3-T3’‧‧‧剖面線T1-T1', T2-T2', T3-T3'‧‧‧ hatching
B‧‧‧區域B‧‧‧Area
M‧‧‧有機層金屬遮罩M‧‧‧Organic metal mask
41、42、43、44‧‧‧有機發光層之側41, 42, 43, 44‧‧‧ side of the organic light-emitting layer
46‧‧‧凹陷區46‧‧‧ recessed area
48‧‧‧凸出區48‧‧‧ protruding area
AA‧‧‧動作區AA‧‧‧ action area
S10、S20、S30、S40‧‧‧步驟S10, S20, S30, S40‧‧‧ steps
第1圖 係為習知發光二極體結構之示意圖。Figure 1 is a schematic diagram of a conventional light-emitting diode structure.
第2圖 係為習知蒸鍍有機發光層之示意圖。Fig. 2 is a schematic view showing a conventional vapor deposition organic light-emitting layer.
第3圖 係為習知蒸鍍陰極電極之示意圖。Figure 3 is a schematic view of a conventional vapor-deposited cathode electrode.
第4圖 係為習知發光二極體結構之一剖面示意圖。Figure 4 is a schematic cross-sectional view of a conventional light-emitting diode structure.
第5圖 係為習知發光二極體結構之另一剖面示意圖。Figure 5 is another schematic cross-sectional view of a conventional light emitting diode structure.
第6圖 係為本發明之有機層金屬遮罩之示意圖。Figure 6 is a schematic view of the organic layer metal mask of the present invention.
第7圖 係為以本發明之有機層金屬遮罩製得之有機發光層之示意圖。Fig. 7 is a schematic view showing an organic light-emitting layer obtained by masking the organic layer of the present invention.
第8圖 係為本發明之有機發光二極體結構之上視圖。Figure 8 is a top view of the structure of the organic light-emitting diode of the present invention.
第9圖 係為沿第8圖之剖面線T3-T3’所得之有機發光二極體結構之剖面示意圖。Fig. 9 is a schematic cross-sectional view showing the structure of the organic light-emitting diode obtained along the section line T3-T3' of Fig. 8.
第10圖 係為本發明之有機發光二極體結構之製造方法之流程示意圖 。Fig. 10 is a flow chart showing the manufacturing method of the organic light emitting diode structure of the present invention.
請一併參閱第6圖至第9圖,第6圖係為本發明之有機層金屬遮罩M之示意圖,第7圖係為以本發明之有機層金屬遮罩M製得之有機發光層40之示意圖,第8圖係為本發明之有機發光二極體結構之上視圖,第9圖係為沿第8圖之剖面線T3-T3’所得之有機發光二極體結構之剖面示意圖。Please refer to FIG. 6 to FIG. 9 together. FIG. 6 is a schematic view of the organic layer metal mask M of the present invention, and FIG. 7 is an organic light-emitting layer prepared by using the organic layer metal mask M of the present invention. 40 is a schematic view of the organic light-emitting diode structure of the present invention, and FIG. 9 is a schematic cross-sectional view of the organic light-emitting diode structure obtained along the cross-sectional line T3-T3' of FIG.
如第8圖及第9圖所示,本發明之有機發光二極體結構包含基板10、第一導電層20、導電襯墊30、有機發光層40及第二導電層50。第一導電層20及導電襯墊30分別設置於基板10上,有機發光層40設置於第一導電層20上且具有複數側41、42、43及44(見第7圖)。並且,如第7圖所示,複數側41、42、43及44分別具有至少一凹陷區46及凸出區48。第二導電層50設置於有機發光層40上。由第7圖至第9圖可知,在本發明之有機發光二極體結構中,有機發光層40之凸出區48覆蓋部分之導電襯墊30,且第二導電層50經由有機發光層40之凹陷區46以及有機發光層40之部分之凸出區48而 覆蓋導電襯墊30,使得第二導電層50電性連接導電襯墊30。As shown in FIGS. 8 and 9, the organic light emitting diode structure of the present invention comprises a substrate 10, a first conductive layer 20, a conductive spacer 30, an organic light emitting layer 40, and a second conductive layer 50. The first conductive layer 20 and the conductive pad 30 are respectively disposed on the substrate 10. The organic light emitting layer 40 is disposed on the first conductive layer 20 and has a plurality of sides 41, 42, 43, and 44 (see FIG. 7). Further, as shown in FIG. 7, the plurality of sides 41, 42, 43, and 44 respectively have at least one recessed portion 46 and a raised portion 48. The second conductive layer 50 is disposed on the organic light emitting layer 40. As shown in FIG. 7 to FIG. 9, in the organic light emitting diode structure of the present invention, the protruding region 48 of the organic light emitting layer 40 covers a portion of the conductive pad 30, and the second conductive layer 50 passes through the organic light emitting layer 40. The recessed region 46 and the protruding portion 48 of the portion of the organic light-emitting layer 40 cover the conductive pad 30 such that the second conductive layer 50 is electrically connected to the conductive pad 30.
在本發明之有機發光二極體結構中,第一導電層20可例如為陽極電極,而第二導電層50可例如為陰極電極。或者,第一導電層20可例如為陰極電極,而第二導電層50可例如為陽極電極。其中,基板10可例如為金屬間介電質層(inter-metal dielectric layer,IMD)。其中,有機發光層40包括依序排列之電洞注入層、電洞傳輸層、發光層、電子傳輸層以及電子注入層(可參閱第1圖中的有機發光層)。上述有機發光層40所包含之層別為本發明所屬技術領域中具有通常知識者所熟知,故在此不再贅述。In the organic light emitting diode structure of the present invention, the first conductive layer 20 may be, for example, an anode electrode, and the second conductive layer 50 may be, for example, a cathode electrode. Alternatively, the first conductive layer 20 can be, for example, a cathode electrode and the second conductive layer 50 can be, for example, an anode electrode. The substrate 10 can be, for example, an inter-metal dielectric layer (IMD). The organic light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially arranged (refer to the organic light-emitting layer in FIG. 1). The layers included in the above organic light-emitting layer 40 are well known to those of ordinary skill in the art to which the present invention pertains, and thus will not be described herein.
上述本發明之有機發光二極體結構中的有機發光層40可例如藉由 第6圖所示之有機層金屬遮罩M而製得。詳細來說,使用者可藉由將第6圖所示之具有特定圖案的有機層金屬遮罩M設置於基板10上,並藉由蒸鍍、沉積或其他本發明所屬技術領域中具有通常知識者所知道之方法而將有機發光層材料設置於基板10及第一導電層20上,且所製得之有機發光層40具有如第7圖所示之圖案。The organic light-emitting layer 40 in the above organic light-emitting diode structure of the present invention can be obtained, for example, by the organic layer metal mask M shown in Fig. 6. In detail, the user can set the organic layer metal mask M having a specific pattern as shown in FIG. 6 on the substrate 10, and has conventional knowledge in the technical field by evaporation, deposition or other fields to which the present invention pertains. The organic light-emitting layer material is disposed on the substrate 10 and the first conductive layer 20 by a method known, and the organic light-emitting layer 40 is formed to have a pattern as shown in FIG.
續言之,如第7圖所示,在本發明之有機發光二極體結構之一較佳實施例中,有機發光層40之複數側41、42、43及44之一者的凹陷區46係例如與有機發光層40之複數側41、42、43及44之另一者的凸出區48彼此相對。此外,凹陷區46與凸出區48之位置對應關係亦可依據實際需求而改變,並不限於前述之彼此相互對應。因此,當有機層金屬遮罩M與基板10失準(misalignment)時,彼此相對之有機發光層4的凹陷區46及凸出區48可彌補凹陷區46及凸出區48的失準問題,而不會使第二導電層50斷線,因此不用考量有機層金屬遮罩M及陰極電極遮罩(即製備第二導電層50的遮罩)與基板10間的公差問題。Continuingly, as shown in FIG. 7, in a preferred embodiment of the organic light emitting diode structure of the present invention, the recessed region 46 of one of the plurality of sides 41, 42, 43 and 44 of the organic light emitting layer 40 For example, the convex regions 48 of the other of the plurality of sides 41, 42, 43 and 44 of the organic light-emitting layer 40 are opposed to each other. In addition, the positional relationship between the recessed area 46 and the protruding area 48 may also be changed according to actual needs, and is not limited to the aforementioned ones corresponding to each other. Therefore, when the organic layer metal mask M and the substrate 10 are misaligned, the recessed regions 46 and the protruding regions 48 of the organic light-emitting layer 4 opposite to each other can compensate for the misalignment problem of the recessed regions 46 and the protruding regions 48. The second conductive layer 50 is not broken, so that the tolerance problem between the organic layer metal mask M and the cathode electrode mask (i.e., the mask for preparing the second conductive layer 50) and the substrate 10 is not considered.
此外,如第10圖所示,本發明也提出一種有機發光二極體結構之製造方法,包含下列步驟S10、S20、S30及S40。在步驟S10中,提供基板;在步驟S20中,將第一導電層及導電襯墊分別設置於基板上;在步驟S30中,設置有機發光層於第一導電層上;以及在步驟S40中,設置第二導電層於有機發光層上。並且,如前面有機發光二極體結構中的有機發光層所描述,請一併參閱第7圖,有機發光層40具有複數側41、42、43及44,且複數側41、42、43及44分別具有至少一凹陷區46及凸出區48。此外,如第9圖所示,有機發光層40之凸出區48覆蓋部分之導電襯墊30,且第二導電層50經由有機發光層40之凹陷區46 以及有機發光層40之部分之凸出區48而覆蓋導電襯墊30,使得第二導電層50電性連接導電襯墊30。由於本發明所提出之有機發光二極體結構之製造方法是用來製備前述第7圖至第9圖所示之有機發光二極體結構,故在此不再贅述。Further, as shown in FIG. 10, the present invention also proposes a method of manufacturing an organic light emitting diode structure, comprising the following steps S10, S20, S30, and S40. In step S10, a substrate is provided; in step S20, a first conductive layer and a conductive pad are respectively disposed on the substrate; in step S30, an organic light-emitting layer is disposed on the first conductive layer; and in step S40, A second conductive layer is disposed on the organic light emitting layer. Moreover, as described in the organic light-emitting layer in the foregoing organic light-emitting diode structure, please refer to FIG. 7 together, the organic light-emitting layer 40 has a plurality of sides 41, 42, 43 and 44, and the plurality of sides 41, 42, 43 and 44 has at least one recessed area 46 and a raised area 48, respectively. In addition, as shown in FIG. 9, the protruding portion 48 of the organic light emitting layer 40 covers a portion of the conductive pad 30, and the second conductive layer 50 is convex through the recessed region 46 of the organic light emitting layer 40 and a portion of the organic light emitting layer 40. The conductive pad 30 is covered by the exit region 48 such that the second conductive layer 50 is electrically connected to the conductive pad 30. Since the manufacturing method of the organic light emitting diode structure proposed by the present invention is used to prepare the organic light emitting diode structure shown in the above FIGS. 7 to 9, the details are not described herein again.
綜上所述,本發明可藉由特定圖案之有機層金屬遮罩M製備有機發光層40而完成本發明所請求保護之有機發光二極體結構。並且,本發明之有機發光二極體結構可免於考量製程中遮罩與基板間的公差問題以及陰極襯墊的尺寸,進而可減小有機發光二極體結構的尺寸,達到窄邊寬的目的,且也不會產生習知有機發光二極體結構可能會造成陰極電極斷線的問題。In summary, the present invention can complete the organic light-emitting diode structure claimed in the present invention by preparing the organic light-emitting layer 40 by a specific pattern of the organic layer metal mask M. Moreover, the organic light emitting diode structure of the present invention can avoid the tolerance problem between the mask and the substrate and the size of the cathode liner in the process, thereby reducing the size of the organic light emitting diode structure and achieving a narrow side width. The purpose, and also does not produce the problem that the conventional organic light-emitting diode structure may cause the cathode electrode to be broken.
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.
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10‧‧‧基板 10‧‧‧Substrate
20‧‧‧第一導電層 20‧‧‧First conductive layer
30‧‧‧導電襯墊 30‧‧‧Electrical gasket
40‧‧‧有機發光層 40‧‧‧Organic light-emitting layer
50‧‧‧第二導電層 50‧‧‧Second conductive layer
Claims (10)
一基板;
一第一導電層及一導電襯墊,分別設置於該基板上;
一有機發光層,設置於該第一導電層上且具有複數側,其中該複數側分別具有至少一凹陷區及一凸出區;以及
一第二導電層,設置於該有機發光層上,An organic light emitting diode structure comprising:
a substrate;
a first conductive layer and a conductive pad are respectively disposed on the substrate;
An organic light-emitting layer is disposed on the first conductive layer and has a plurality of sides, wherein the plurality of sides respectively have at least one recessed region and a protruding region; and a second conductive layer disposed on the organic light-emitting layer
提供一基板;
將一第一導電層及一導電襯墊分別設置於該基板上;
設置一有機發光層於該第一導電層上,其中該有機發光層具有複數側,且該複數側分別具有至少一凹陷區及一凸出區;以及
設置一第二導電層於該有機發光層上,A method for manufacturing an organic light emitting diode structure, comprising:
Providing a substrate;
A first conductive layer and a conductive pad are respectively disposed on the substrate;
An organic light emitting layer is disposed on the first conductive layer, wherein the organic light emitting layer has a plurality of sides, and the plurality of sides respectively have at least one recessed region and a protruding region; and a second conductive layer is disposed on the organic light emitting layer on,
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