TW201545199A - Plasma processing chamber and composite component for DC electrode and heating device of the plasma processing chamber - Google Patents

Abstract

The present invention provides a plasma processing chamber, and a composite component for DC electrode and heating device of the plasma processing chamber. A lower portion of the plasma processing chamber includes a base. A plurality of cooling liquid channels are provided below the base. A heat insulation layer is provided above the plurality of cooling liquid passages. The present invention is characterized in that an insulation layer is provided above the heat insulation layer. A composite component made by an electrothermal alloy is provided above the insulation layer and served as DC electrode and heating device. The plasma processing chamber and the composite component for DC electrode and heating device of the plasma processing chamber are capable of being served as DC electrode and heating device simultaneously, and exerting both functions without crosstalk, thereby simplifying mechanism and saving energy.

Description

Composite component of plasma processing chamber and its DC electrode and heating device

The present invention relates to the field of semiconductor manufacturing, and more particularly to a composite component of a plasma processing chamber and its DC electrode and heating device.

The plasma processing apparatus performs processing of the substrate of the semiconductor substrate and the plasma flat plate by using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant source gas into the vacuum reaction chamber, and then input the RF energy into the vacuum reaction chamber to activate the reaction gas to excite and maintain the plasma so as to respectively The semiconductor substrate and the plasma plate are processed by etching a layer of material on the surface of the substrate or depositing a layer of material on the surface of the substrate.

The plasma processing chamber includes a cavity, and a base is disposed at a lower portion of the cavity, and a substrate is placed on the base. A heating device and a plurality of coolant channels are disposed in the base, wherein the heating device is disposed in a base adjacent to the substrate for heating the substrate, and the coolant channel is disposed under the heating device for The substrate is cooled. The heating device and several coolant channels together form a temperature regulation system for the substrate and the abutment.

Conventional plasma processing chambers are also typically provided with a flow-through electrode on top of the heating device for generating electrostatic attraction for holding the substrate. Therefore, the heating of the substrate and system must be achieved by the resistance of the DC electrode.

In view of the above problems in the background art, the present invention proposes a composite component of a plasma processing chamber and its DC electrode and heating device.

A first aspect of the present invention provides a composite component for a DC electrode and a heating device for a lower electrode of a plasma processing chamber, wherein a lower portion of the plasma processing chamber includes a base, and a plurality of coolants are disposed under the base a heat insulating layer is disposed above the coolant passage, wherein an insulating layer is disposed above the heat insulating layer, and a composite component made of an electrothermal alloy is disposed above the insulating layer, and serves as a DC Electrode and heating device.

Further, the electrothermal alloy includes tungsten, iron, chromium, and nickel.

Further, the composite component includes a first access point and a second access point, and the first access point is provided with a DC electrode, a path between the DC power source and the first access point, and a second A transformer is provided between the intervention points.

Further, the transformer has an alternating current power supply in parallel.

Further, the transformer is further connected in series with a first switch for controlling the switch of the transformer.

Further, the DC electrode is further connected in series with a second switch for controlling the switch of the DC power source.

Further, the insulating layer is a ceramic.

A second aspect of the invention provides a plasma processing chamber, wherein the plasma processing chamber comprises the composite component of the first aspect of the invention.

Further, the plasma processing chamber further includes a coolant circulation device connected to the coolant passage for circulating the coolant to the coolant passage.

Further, a coolant supply passage and a coolant recovery passage are further disposed between the coolant passage and the coolant circulation device for respectively supplying the coolant to the coolant passage and recovering the coolant to the coolant circulation device.

The plasma processing chamber provided by the invention and the composite component of the DC electrode and the heating device can simultaneously serve as the DC electrode and the heating device, and simultaneously play the role of both without crosstalk, simplifying the mechanism and saving energy.

Specific embodiments of the present invention will be described below with reference to the accompanying drawings.

It is to be noted that the terms "semiconductor process", "wafer" and "substrate" will be used interchangeably in the following description. In the present invention, they all refer to process parts that are processed in the processing chamber. The process member is not limited to a wafer, a substrate, a substrate, a large-area flat substrate, or the like. For convenience of description, the "substrate" will be mainly exemplified in the description and illustration of the embodiments herein.

The plasma processing chamber described herein is typically a plasma etching machine. The following is an example of a plasma etching machine. However, it should be understood by those of ordinary skill in the art that the invention is not limited thereto, and that the plasma processing chamber further includes a CVD machine or the like. Among them, any plasma processing chamber that can be applied to the present invention should be covered by the scope of the present invention.

Figure 1 shows a schematic view of the structure of a plasma processing chamber. The plasma processing chamber 100 has a processing chamber (not shown), the processing chamber is substantially cylindrical, and the processing chamber sidewall 102 is substantially vertical, and the processing chamber has upper and lower electrodes disposed in parallel with each other. Typically, the area between the upper and lower electrodes is the processing area P which will form high frequency energy to ignite and sustain the plasma. A substrate W to be processed is placed over the substrate 106, which may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. The base 106 is used to clamp the substrate W. The reaction gas is input from the gas source 103 to the gas shower head 109 in the processing chamber, and the one or more radio frequency power sources 104 may be separately applied to the lower electrode or simultaneously applied to the upper and lower electrodes, respectively. The RF power is delivered to the lower electrode or to the upper and lower electrodes to create a large electric field inside the processing chamber. Most of the electric field lines are contained in the processing region P between the upper electrode and the lower electrode, and this electric field accelerates a small amount of electrons existing inside the processing chamber to collide with gas molecules of the input reaction gas. These collisions result in ionization of the reactive gases and excitation of the plasma, creating plasma in the processing chamber. The neutral gas molecules of the reactive gas lose electrons when subjected to these strong electric fields, leaving positively charged ions. The positively charged ions accelerate toward the lower electrode and combine with the neutral species in the substrate being processed to excite substrate processing, i.e., etching, deposition, and the like. An exhaust region is provided at a suitable location of the plasma processing chamber 100, the exhaust region being coupled to an external exhaust device 105 (eg, a vacuum pump) for use of the reactive gas during processing And by-product gas extraction chamber. The plasma confinement ring 107 is used to confine the plasma within the processing region P. A grounding end is connected to the side wall 102 of the chamber, and a resistor 108 is disposed therein.

2 is a schematic view showing the structure of a base of a plasma processing chamber of the prior art. As shown in FIG. 2, the base 106 for placing a substrate includes a substrate 1060 in which a plurality of cooling channels 1066 are disposed. Coolant flows through the cooling channels 1066 to cool the system and the substrate. The upper layer of the heat insulating layer 1065 is the temperature rising portion of the substrate temperature control system, and a first insulating layer 1064 is disposed above the heat insulating layer 1065, in which a heating device 1063 is disposed. A second insulating layer 1061 is disposed above the first insulating layer, and a DC electrode 1062 is disposed for generating an electrostatic adsorption force to sandwich the substrate over the second insulating layer 1061.

Therefore, the conventional technique generally places the DC electrode 1062 on the heating device 1063. However, since the heating device 1063 transmits temperature to the substrate to overcome the resistance of more material layers, the temperature rise rate is slow.

In order to solve the above technical problems, the present invention has been proposed. 3 is a schematic block diagram of a base of a plasma processing chamber and composite components in accordance with an embodiment of the present invention. The invention will now be described with reference to Fig. 3.

A first aspect of the invention provides a composite component 2067 for a DC electrode of a plasma processing chamber lower electrode and a heating device, wherein the plasma processing chamber lower portion includes a base 206, a substrate 2060 below the abutment A plurality of coolant passages 2066 are disposed therein, and a heat insulation layer 2065 is disposed above the coolant passages 2066. The insulating layer 2065 is used for the heating device of the barrier system and the cooling device, which is the cooling channel 2066 described above. An insulating layer 2068 is disposed above the heat insulating layer 2065, and a composite member 2067 made of an electrothermal alloy is disposed above the insulating layer 2068, and serves as a DC electrode and a heating device.

Among them, the electrothermal alloy refers to a metal which has a certain resistance and is easily heated after a voltage is applied. Illustratively, the electrothermal alloy includes tungsten, iron, chromium, nickel.

Wherein, the composite component 2067 includes a first access point A and a second access point B, and the first access point is provided with a DC power source DC, and a path between the DC power source DC and the first access point A And a transformer T is disposed between the second intervention point B. The power supply circuit provided by the present invention is the key to realizing the composite element 2067 of the present invention with both the DC electrode and the heating device.

Specifically, those of ordinary skill in the art should understand that the power supply connection of the DC electrode of the electrostatic chuck requires only one access point, that is, the first access point A of the present invention, at the first access point. Connect A to the DC power supply DC, and connect one end of the DC electrode DC to ground. However, the heating device needs to apply a power supply voltage between the two access points, that is, a transformer T is disposed between the first access point A and the second access point B, and the transformer T is composed of the first inductor P1 and the second The inductor P2 is coupled, wherein the second inductor is further connected in series with an AC power source AC, and a section of the AC power source AC is grounded. Wherein, when the AC power source AC generates an AC voltage, the current flowing in the second inductor P2 generates an electromagnetic field, and the first inductor P1 in the electromagnetic field also induces a corresponding induced current, thereby heating the composite component 2067. Therefore, the composite component 2067 can balance the functions of the DC electrode and the heating device under the action of the above-described circuit.

Among them, the transformer also takes into account the function of isolation, so that the DC voltage DC and the AC power source AC do not cross each other.

Further, the transformer T is further connected in series with a first switch C1 for controlling the switch of the transformer T.

Further, the DC electrode is further connected in series with a second switch C2 for controlling the switch of the DC power source DC.

Further, the material of the insulating layer 2068 includes ceramic.

A second aspect of the invention provides a plasma processing chamber, characterized in that the plasma processing chamber comprises a composite component as hereinbefore described.

Further, the plasma processing chamber further includes a coolant circulation device connected to the coolant passage for circulating the coolant to the coolant passage.

Further, a coolant supply passage and a coolant recovery passage are further disposed between the coolant passage and the coolant circulation device for respectively supplying the coolant to the coolant passage and recovering the coolant to the coolant circulation device.

The plasma processing chamber provided by the invention and the composite component of the DC electrode and the heating device can simultaneously serve as the DC electrode and the heating device, and simultaneously play the role of both without crosstalk, simplifying the mechanism and saving energy.

Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those of ordinary skill in the art. Accordingly, the scope of the invention should be defined by the appended claims. In addition, any reference signs in the claim should not be construed as limiting the claim. The term "comprising" does not exclude the other claim or the means or steps not listed in the specification; "first", " Words such as "two" are used only to denote a name, and do not denote any particular order.

100‧‧‧ Plasma processing chamber
102‧‧‧Processing cavity sidewall
103‧‧‧ gas source
104‧‧‧RF power supply
105‧‧‧Exhaust device
106‧‧‧Abutment
1060‧‧‧Base
1061‧‧‧Second insulation
1062‧‧‧DC electrode
1063‧‧‧ heating device
1064‧‧‧First insulation
1065‧‧‧Insulation
1066‧‧‧Cooling channel
107‧‧‧plasma restraint ring
108‧‧‧resistance
109‧‧‧ gas sprinkler
206‧‧‧Abutment
2060‧‧‧Base
2065‧‧‧Insulation
2066‧‧‧Solution channel
2067‧‧‧Composite components
2068‧‧‧Insulation
A‧‧‧First access point
B‧‧‧Second access point
C1‧‧‧ first switch
C2‧‧‧second switch
P‧‧‧Processing area
P1‧‧‧first inductance
P2‧‧‧second inductance
T‧‧‧Transformer
W‧‧‧ substrates
AC‧‧‧AC power supply
DC‧‧‧DC power supply

[Fig. 1] is a schematic structural view of a plasma processing chamber; [Fig. 2] is a schematic view of a base structure of a plasma processing chamber of the prior art; [Fig. 3] is a plasma according to an embodiment of the present invention. Schematic diagram of the abutment of the processing chamber and the composite component.

206‧‧‧Abutment

2060‧‧‧Base

2065‧‧‧Insulation

2066‧‧‧Solution channel

2067‧‧‧Composite components

2068‧‧‧Insulation

C1‧‧‧ first switch

C2‧‧‧second switch

P1‧‧‧first inductance

P2‧‧‧second inductance

T‧‧‧Transformer

AC‧‧‧AC power supply

DC‧‧‧DC power supply

Claims (10)

A composite component for a DC electrode of a plasma processing chamber lower electrode and a heating device, the lower portion of the plasma processing chamber comprising: a base, a plurality of coolant channels disposed under the base, in the coolant channel A heat insulating layer is disposed above the insulating layer, and an insulating layer made of an electrothermal alloy is disposed above the insulating layer, and serves as a DC electrode and a heating device. The composite component of claim 1 wherein the electrothermal alloy comprises tungsten, iron, chromium, nickel. The composite component of claim 2, wherein the composite component includes a first access point and a second access point, and the first access point is provided with a DC electrode, the DC power source and the first access A transformer is provided between the path between the points and the second intervention point. The composite component of claim 3, wherein the transformer has an alternating current source in parallel. A composite component according to claim 4, wherein said transformer is further connected in series with a first switch for controlling the switching of said transformer. The composite component of claim 3, wherein the DC electrode is further connected in series with a second switch for controlling the switching of the DC power source. The composite component of claim 1 wherein the insulating layer is ceramic. A plasma processing chamber, characterized in that the plasma processing chamber comprises the composite component of any one of claims 1 to 7. The plasma processing chamber of claim 8, wherein the plasma processing chamber further comprises a coolant circulation device, the coolant circulation device being coupled to the coolant passage for circulating a coolant to The coolant passage. The plasma processing chamber of claim 9, wherein a coolant supply passage and a coolant recovery passage are disposed between the coolant passage and the coolant circulation device for respectively supplying a coolant to the chamber The coolant passage and the recovery coolant are sent to the coolant circulation device.