TW201543642A - Metal pad for laser marking - Google Patents

Metal pad for laser marking Download PDF

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Publication number
TW201543642A
TW201543642A TW103141559A TW103141559A TW201543642A TW 201543642 A TW201543642 A TW 201543642A TW 103141559 A TW103141559 A TW 103141559A TW 103141559 A TW103141559 A TW 103141559A TW 201543642 A TW201543642 A TW 201543642A
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TW
Taiwan
Prior art keywords
package
laser
pad
laser marking
polymer layer
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Application number
TW103141559A
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Chinese (zh)
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TWI591797B (en
Inventor
An-Jhih Su
Hsien-Wei Chen
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Taiwan Semiconductor Mfg
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Priority claimed from US14/192,341 external-priority patent/US9343434B2/en
Priority claimed from US14/486,353 external-priority patent/US9589900B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW201543642A publication Critical patent/TW201543642A/en
Application granted granted Critical
Publication of TWI591797B publication Critical patent/TWI591797B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48235Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A package includes a device die, a molding material molding the device die therein, and a plurality of redistribution lines overlying the device die and the molding material. A laser mark pad is coplanar with one of the plurality of redistribution lines, wherein the laser mark pad and the one of the plurality of redistribution layers are formed of the same conductive material. A polymer layer is over the laser mark pad and the plurality of redistribution lines. A tape is attached over the polymer layer. A laser mark penetrates through the tape and the polymer layer. The laser mark extends to a top surface of the laser mark pad.

Description

用於雷射標記的金屬墊 Metal pad for laser marking

本發明係關於在半導體封裝技術中用於雷射標記的金屬墊。 This invention relates to metal pads for laser marking in semiconductor packaging technology.

在積體電路封裝中,有許多形式的封裝方法與結構。例如,在習知的堆疊封裝(Package-on-Package,POP)中,頂部封裝接合至底部封裝。該頂部封裝與該底部封裝亦可具有裝置晶粒封裝於其中。藉由採用PoP製程,增加封裝的整合層級。 There are many forms of packaging methods and structures in integrated circuit packages. For example, in a conventional package-on-package (POP), the top package is bonded to the bottom package. The top package and the bottom package may also have device die encapsulated therein. Increase the integration level of the package by using the PoP process.

在現存的PoP製程中,先形成底部封裝,其包含接合至封裝基板的裝置晶粒。在該封裝基板上,將模塑料成形,其中將該裝置晶粒封裝於該模塑料中。該封裝基板進一步包含焊球形成於其上,其中該焊球與該裝置晶粒係在該封裝基板的同側上。該焊球係用於將該頂部封裝連接至該底部封裝。 In existing PoP processes, a bottom package is first formed that includes device dies bonded to the package substrate. On the package substrate, a molding compound is formed, wherein the device die is encapsulated in the molding compound. The package substrate further includes a solder ball formed thereon, wherein the solder ball and the device die are on the same side of the package substrate. The solder ball is used to connect the top package to the bottom package.

本申請案揭示內容的一些實施例係提供一種封裝,其包括:第一封裝,其包括:裝置晶粒;模塑料,其將該裝置晶粒封裝於其中;複數個重佈線,其位於該裝置晶粒與該模塑料上方;雷射標記墊,其係與該複數個重佈線其中之一齊平,其中該雷射標記與該複數個重佈 線其中之一係由相同的傳導材料形成;聚合物層,其係位於該雷射標記墊與該複數個重佈線上方;膠帶,其係位於該聚合物層上方;以及雷射標記,其穿過該膠帶與該聚合物層,其中該雷射標記延伸至該雷射標記墊的頂部表面。 Some embodiments of the present disclosure provide a package comprising: a first package comprising: device die; a molding compound encapsulating the device die therein; a plurality of rewirings located at the device a die and a top portion of the molding compound; the laser marking pad is flush with one of the plurality of rewirings, wherein the laser marking is overlapped with the plurality of One of the wires is formed from the same conductive material; a polymer layer is positioned over the laser marking pad and the plurality of redistributions; an adhesive tape is positioned over the polymer layer; and a laser marking is worn The tape and the polymer layer are passed through, wherein the laser marking extends to a top surface of the laser marking pad.

本申請案揭示內容的一些實施例係提供一種封裝,其包括:第一封裝,其包括:至少一第一介電層;第一複數個重佈線,其係位於該至少一第一介電層中;裝置晶粒,其係位於該第一複數個重佈線上方並且電耦合至該第一複數個重佈線;模塑料,其將該裝置晶粒封裝於其中;貫穿通路,其穿過該模塑料;至少一第二介電材料,其係位於該裝置晶粒上方;第二複數個重佈線,其係位於該至少一第二介電層中,其中該第二複數個重佈線其中之一係經由該貫穿通路而電耦合至該第一複數個重佈線其中之一;金屬墊,其係位於該至少一第二介電層中,其中該金屬墊係連接至該貫穿通路;第三介電層,其係位於該至少一第二介電層上方;以及雷射標記,其係從該第三介電層的頂部表面延伸至該金屬墊的頂部表面;以及第二封裝,其係位於該第一封裝上方且接合至該第一封裝。 Some embodiments of the disclosure of the present application provide a package including: a first package including: at least one first dielectric layer; and a first plurality of redistributions disposed on the at least one first dielectric layer a device die positioned over the first plurality of redistributions and electrically coupled to the first plurality of redistributions; a molding compound encapsulating the device die therein; a through via that passes through the die Plastic; at least one second dielectric material over the die of the device; a second plurality of redistributions disposed in the at least one second dielectric layer, wherein one of the second plurality of redistributions Electrically coupled to one of the first plurality of redistributions via the through via; a metal pad disposed in the at least one second dielectric layer, wherein the metal pad is connected to the through via; An electrical layer positioned over the at least one second dielectric layer; and a laser mark extending from a top surface of the third dielectric layer to a top surface of the metal pad; and a second package located at Above the first package To the first package.

本申請案揭示內容的一些實施例係提供一種方法,其包括:形成第一封裝,其包括:至少一第一介電層;第一複數個重佈線,其係位於該至少一第一介電層中;裝置晶粒,其係位於該第一複數個重佈線上方並且電耦合至該第一複數個重佈線;模塑料,其將該裝置晶粒封裝於其中;貫穿通路,其穿過該模塑料;至少一第二介電材料,其係位於該裝置晶粒上方;第二複數個重佈線,其係位於該至少一第二介電層中,其中該第二複數個重佈線係經由該貫穿通路而電耦合至該第一複數個重佈線;以及金屬墊,其係位於該至少一第二介電層中;在該至少一第二介電層上方,形成聚合物層;在該聚合物層上方,附接膠帶;以及進行雷射標記,以於該聚合物層與該膠帶中形成雷射標 記,部分的該金屬墊暴露至該雷射標記。 Some embodiments of the present disclosure provide a method comprising: forming a first package comprising: at least one first dielectric layer; a first plurality of redistributions disposed at the at least one first dielectric a layer of device disposed over the first plurality of redistributions and electrically coupled to the first plurality of redistributions; a molding compound encapsulating the device die therein; a through via that passes through the a molding compound; at least one second dielectric material located above the device die; a second plurality of rewirings in the at least one second dielectric layer, wherein the second plurality of rewiring lines are The through-via is electrically coupled to the first plurality of redistributions; and a metal pad is disposed in the at least one second dielectric layer; forming a polymer layer over the at least one second dielectric layer; Above the polymer layer, attaching a tape; and performing laser marking to form a laser mark in the polymer layer and the tape Note that part of the metal pad is exposed to the laser mark.

100‧‧‧封裝 100‧‧‧Package

102‧‧‧裝置晶粒 102‧‧‧ device grain

104‧‧‧積體電路裝置 104‧‧‧Integrated circuit device

106‧‧‧金屬柱/金屬墊 106‧‧‧Metal column/metal pad

108‧‧‧半導體基板 108‧‧‧Semiconductor substrate

108A‧‧‧後表面 108A‧‧‧Back surface

110‧‧‧晶粒附接膜(die-attach film) 110‧‧‧die-attach film

112‧‧‧重佈線(RDL) 112‧‧‧Rewiring (RDL)

114‧‧‧介電層 114‧‧‧Dielectric layer

116‧‧‧RDL 116‧‧‧RDL

116’‧‧‧RDL墊 116’‧‧‧RDL mat

118‧‧‧介電層 118‧‧‧ dielectric layer

118A‧‧‧介電層 118A‧‧‧ dielectric layer

120‧‧‧模塑料 120‧‧‧Molded plastic

120A‧‧‧底部表面 120A‧‧‧ bottom surface

120B‧‧‧頂部表面 120B‧‧‧ top surface

122‧‧‧貫穿通路 122‧‧‧through path

122A‧‧‧貫穿通路 122A‧‧‧through path

124‧‧‧電連接裝置/金屬墊 124‧‧‧Electrical connection device / metal pad

126‧‧‧焊料區 126‧‧‧ solder zone

128‧‧‧雷射標記墊 128‧‧‧Laser marker pad

130‧‧‧密封環 130‧‧‧Seal ring

131‧‧‧介電層/聚合物層 131‧‧‧Dielectric/polymer layer

132‧‧‧雷射標記 132‧‧‧Laser Mark

132’‧‧‧雷射標記 132’‧‧‧Laser Mark

133‧‧‧膠帶 133‧‧‧ Tape

134‧‧‧雷射光束 134‧‧‧Laser beam

136‧‧‧開口 136‧‧‧ openings

138‧‧‧焊料區 138‧‧‧ solder zone

138’‧‧‧焊料區 138’‧‧‧ solder zone

140‧‧‧底膠填充(underfill) 140‧‧‧ Underfill

142‧‧‧金屬跡線 142‧‧‧Metal traces

144‧‧‧金屬跡線 144‧‧‧Metal traces

146‧‧‧槽 146‧‧‧ slot

200‧‧‧封裝 200‧‧‧Package

202‧‧‧封裝基板 202‧‧‧Package substrate

204‧‧‧裝置晶粒 204‧‧‧ device grain

由以下詳細說明與附隨圖式得以最佳了解本申請案揭示內容之各方面。注意,根據產業之標準實施方式,各種特徵並非依比例繪示。實際上,為了清楚討論,可任意增大或縮小各種特徵的尺寸。 The aspects of the disclosure of the present application are best understood from the following detailed description and the accompanying drawings. Note that various features are not drawn to scale in accordance with standard implementations of the industry. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

圖1至圖7係根據一些實施例說明形成封裝的中間階段之橫切面圖。 1 through 7 illustrate cross-sectional views of intermediate stages of forming a package, in accordance with some embodiments.

圖8係根據一些實施例說明封裝的俯視圖,其中複數個雷射標記墊係彼此隔離。 8 is a top plan view of a package in which a plurality of laser marker pads are isolated from each other, in accordance with some embodiments.

圖9係根據一些實施例說明封裝的俯視圖,其中雷射標記墊係連接至貫穿通路。 9 is a top plan view of a package in which a laser marker pad is attached to a through via, in accordance with some embodiments.

圖10係根據一些實施例說明封裝的俯視圖,其中雷射標記與個別雷射標記墊係未對準封裝中的裝置晶粒。 10 is a top plan view of a package in which the laser markings are not aligned with the individual laser marking pads of the device die in the package, in accordance with some embodiments.

圖11係根據一些實施例說明封裝的俯視圖,其中在雷射標記墊上方,形成複數個雷射標記。 Figure 11 illustrates a top view of a package in which a plurality of laser marks are formed over a laser marking pad in accordance with some embodiments.

圖12係根據一些實施例說明封裝的俯視圖,其中大雷射標記墊包含複數個槽(slot)。 12 is a top plan view of a package in which a large laser marker pad includes a plurality of slots, in accordance with some embodiments.

以下揭示內容提供許多不同的實施例或範例,用於實施本申請案之不同特徵。元件與配置的特定範例之描述如下,以簡化本申請案之揭示內容。當然,這些僅為範例,並非用於限制本申請案。例如,以下描述在第二特徵上或上方形成第一特徵可包含形成直接接觸的第一與第二特徵之實施例,亦可包含在該第一與第二特徵之間形成其他特徵的實施例,因而該第一與第二特徵並非直接接觸。此外,本申請 案可在不同範例中重複元件符號與/或字母。此重複係為了簡化與清楚之目的,而非支配不同實施例與/或所討論架構之間的關係。 The following disclosure provides many different embodiments or examples for implementing the various features of the present application. Specific examples of components and configurations are described below to simplify the disclosure of the present application. Of course, these are merely examples and are not intended to limit the application. For example, the following description of forming an initial feature on or over a second feature may include forming first and second features of direct contact, and may also include embodiments for forming other features between the first and second features. Thus, the first and second features are not in direct contact. In addition, this application The symbol symbols and/or letters can be repeated in different examples. This repetition is for the purpose of simplicity and clarity, and is not intended to govern the relationship between the various embodiments and/or the structures discussed.

再者,本申請案可使用空間對應語詞,例如「之下」、「低於」、「較低」、「高於」、「較高」等類似語詞之簡單說明,以描述圖式中一元件或特徵與另一元件或特徵的關係。空間對應語詞係用以包括除了圖式中描述的位向之外,裝置於使用或操作中之不同位向。裝置或可被定位(旋轉90度或是其他位向),並且可相應解釋本申請案使用的空間對應描述。 Furthermore, the present application may use spatially corresponding words, such as "lower", "lower", "lower", "higher", "higher" and the like, to describe one of the patterns. The relationship of an element or feature to another element or feature. Spatially corresponding words are used to include different orientations of the device in use or operation in addition to the orientations depicted in the drawings. The device may be positioned (rotated 90 degrees or other orientations) and the spatially corresponding description used in this application may be interpreted accordingly.

根據不同的實施例,本申請案提供封裝以及在封裝中形成雷射標記的方法。本申請案亦討論實施例的變化。在不同的圖示與實施例中,相同的元件符號係用以代表相同的元件。 According to various embodiments, the present application provides a method of packaging and forming a laser mark in a package. Variations of the embodiments are also discussed in this application. In the different figures and embodiments, the same element symbols are used to represent the same elements.

圖1係說明封裝100的橫切面圖。根據本申請案揭示內容的一些實施例,封裝100包含裝置晶粒102,裝置晶粒102的前側朝下並且接合至重佈線(redistribution line,RDL)112。在其他實施例中,封裝100包含超過一個裝置晶粒。裝置晶粒102可包含半導體基板108,以及在半導體基板108的前表面上之積體電路裝置104(例如主動裝置,其可包含金屬氧化物半導體(metal oxide semiconductor,MOS)電晶體或二極體)。裝置晶粒102可為邏輯晶粒,例如中央處理單元(CPU)晶粒、圖形處理單元(GPU)晶粒、行動應用晶粒或類似物。在本申請案的揭示內容中,圖1中的裝置晶粒102朝下之側係指裝置晶粒102的前側,以及圖1中的裝置晶粒102朝上之側係指裝置晶粒102的背側。半導體基板108的後表面108A亦為裝置晶粒102的後表面。 FIG. 1 is a cross-sectional view showing the package 100. In accordance with some embodiments of the present disclosure, package 100 includes device die 102 with the front side of device die 102 facing down and bonded to a redistribution line (RDL) 112. In other embodiments, package 100 includes more than one device die. The device die 102 can include a semiconductor substrate 108, and an integrated circuit device 104 on the front surface of the semiconductor substrate 108 (eg, an active device, which can include a metal oxide semiconductor (MOS) transistor or diode) ). Device die 102 may be a logic die, such as a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application die, or the like. In the disclosure of the present application, the downward side of the device die 102 in FIG. 1 refers to the front side of the device die 102, and the upward facing side of the device die 102 in FIG. 1 refers to the device die 102. Back side. The rear surface 108A of the semiconductor substrate 108 is also the rear surface of the device die 102.

裝置晶粒102係封裝於模塑料120中,該模塑料120包圍裝置晶粒102。模塑料120可為模塑料(molding compound)、底膠填充(molding underfill)、樹脂或類似物。模塑料120的底部表面120A可與裝置晶粒102的底端齊平。模塑料120的頂部表面120B可與半導體基板108的後 表面108A齊平或高於半導體基板108的後表面108A。根據本申請案揭示內容的實施例,半導體基板108的後表面108A係與晶粒附接膜(die-attach film)110重疊並與其接觸,該晶粒附接膜110係介電膜,其將裝置晶粒102黏著至上方的介電層118。裝置晶粒102進一步包含接觸且接合至RDL 112的金屬柱/墊106(例如,其可包含銅柱)。金屬柱106可包埋在裝置晶粒102的表面介電層(未標示)中。 The device die 102 is encapsulated in a molding compound 120 that surrounds the device die 102. The molding compound 120 may be a molding compound, a molding underfill, a resin or the like. The bottom surface 120A of the molding compound 120 can be flush with the bottom end of the device die 102. The top surface 120B of the molding compound 120 may be behind the semiconductor substrate 108 Surface 108A is flush or higher than rear surface 108A of semiconductor substrate 108. In accordance with an embodiment of the present disclosure, the back surface 108A of the semiconductor substrate 108 is overlapped and in contact with a die-attach film 110, which is a dielectric film that will The device die 102 is adhered to the upper dielectric layer 118. The device die 102 further includes a metal post/pad 106 that contacts and is bonded to the RDL 112 (eg, it can include a copper post). Metal posts 106 may be embedded in a surface dielectric layer (not labeled) of device die 102.

封裝100包含位於裝置晶粒102下方的RDL 112以及位於裝置晶粒102上方的RDL 116。由於RDL 112係位於裝置晶粒102的前側上,因而亦稱為前側RDL。由於RDL 116係位於裝置晶粒102的背側上,因而亦稱為背側RDL。前側RDL 112係形成於一或多個介電層114中,以及背側RDL 116係形成於一或多個介電層118中。雖然圖1說明一層背側RDL 116與複數層的前側RDL 112,然而可理解可依要求而決定可不同於圖示之RDL 112與116的層數。RDL 112與116可由銅、鋁、鎳、鈦、鉭、其合金、以及/或其多層而製成。 The package 100 includes an RDL 112 located below the device die 102 and an RDL 116 located above the device die 102. Since the RDL 112 is located on the front side of the device die 102, it is also referred to as the front side RDL. Since the RDL 116 is located on the back side of the device die 102, it is also referred to as the backside RDL. The front side RDL 112 is formed in one or more dielectric layers 114, and the back side RDL 116 is formed in one or more dielectric layers 118. Although FIG. 1 illustrates a back side RDL 116 and a plurality of layers of front side RDL 112, it will be appreciated that the number of layers that may differ from the illustrated RDLs 112 and 116 may be determined as desired. RDLs 112 and 116 can be made of copper, aluminum, nickel, titanium, tantalum, alloys thereof, and/or multilayers thereof.

根據本申請案揭示內容的一些實施例,介電層114與118係由有機材料製成,例如聚合物,其可進一步包含聚苯并噁唑(polybenzoxazole,PBO)、苯并環丁烯(benzocyclobutene,BCB)、聚亞醯胺、防焊層(solder mask)或類似物。在其他實施例中,介電層114與118係由無機材料製成,例如氧化矽、氮化矽、氮氧化矽或類似物。再者,一些介電層114與118可為複合層,其包含由不同材料形成的複數個次層(sub-layer)。例如,一介電層114或118之範例可包含氧化矽層與氮化矽層。 In accordance with some embodiments of the present disclosure, dielectric layers 114 and 118 are made of an organic material, such as a polymer, which may further comprise polybenzoxazole (PBO), benzocyclobutene (benzocyclobutene). , BCB), polyamidamine, solder mask or the like. In other embodiments, dielectric layers 114 and 118 are made of an inorganic material such as hafnium oxide, tantalum nitride, hafnium oxynitride or the like. Moreover, some of the dielectric layers 114 and 118 can be a composite layer comprising a plurality of sub-layers formed of different materials. For example, an example of a dielectric layer 114 or 118 can include a hafnium oxide layer and a tantalum nitride layer.

根據本申請案揭示內容的一些實施例,形成各層RDL 116與介電層118包含使用物理氣相沉積形成包覆晶種層(blanket seed layer)(未繪示於圖式中),形成且圖案化光阻(未繪示於圖式中)以覆蓋該包覆晶種層的一些部分,在該光阻中的開口中電鍍RDL,而後移除該光阻,並 且蝕刻受到移除之光阻先前所覆蓋的該部分之晶種層。 According to some embodiments of the disclosure of the present application, forming each layer of RDL 116 and dielectric layer 118 includes forming a blanket seed layer (not shown in the drawings) using physical vapor deposition, forming and patterning a photoresist (not shown) to cover portions of the cladding seed layer, plating RDL in the opening in the photoresist, and then removing the photoresist, and And etching the seed layer of the portion previously covered by the removed photoresist.

形成穿過模塑料120的貫穿通路122。根據本申請案揭示內容的實施例,貫穿通路122具有與模塑料120之頂部表面120B齊平的頂部表面,以及與模塑料120之底部表面120A齊平的底部表面。貫穿通路122將前側RDL 112電連接至背側RDL 116。貫穿通路122亦可與前側RDL 112與背側RDL 116實質接觸。可藉由形成具有開口於其中的圖案化遮罩(未繪示於圖式中)並且將該圖案化遮罩中的開口中的貫穿通路122電鍍而形成貫穿通路122。貫穿通路122可包括銅、鋁、鈦、鎳、鈀或其合金。 A through passage 122 is formed through the molding compound 120. In accordance with an embodiment of the present disclosure, the through passage 122 has a top surface that is flush with the top surface 120B of the molding compound 120, and a bottom surface that is flush with the bottom surface 120A of the molding compound 120. The front side RDL 112 is electrically connected to the back side RDL 116 through the via 122. The through passage 122 may also be in substantial contact with the front side RDL 112 and the back side RDL 116. The through via 122 can be formed by forming a patterned mask (not shown) that is open therein and electroplating the through via 122 in the opening in the patterned mask. The through via 122 can comprise copper, aluminum, titanium, nickel, palladium, or alloys thereof.

可形成接近封裝100周圍的貫穿通路122,如圖8至圖12所示,然而貫穿通路122亦可形成於封裝100的任何其他位置。根據本申請案揭示內容的實施例,貫穿通路122可對準包圍雷射標記墊128的環。 A through via 122 near the periphery of the package 100 can be formed, as shown in FIGS. 8-12, although the via 122 can also be formed at any other location of the package 100. In accordance with an embodiment of the present disclosure, the through passage 122 can be aligned with the ring that surrounds the laser marker pad 128.

在封裝100的底部表面,形成由非焊料金屬材料所形成的電連接裝置124。根據本申請案揭示內容的實施例,電連接裝置124包含凸塊底下之金屬層(under-bump metallurgy,UBM)或是金屬墊。在其他實施例中,電連接裝置124包含金屬柱,例如銅柱。在本申請案之揭示內容中,電連接裝置124為金屬墊124,然而其可具有其他形式。金屬墊124可包括銅、鋁、鈦、鎳、鈀、金或其多層。根據本申請案揭示內容的一些實施例,如圖1所示,金屬墊124的底部表面突出超過底部介電層114的底部表面。在其他實施例中,金屬墊124的底部表面係與底部介電層114的底部表面齊平。焊料區126可附接至金屬墊124的底部表面。 At the bottom surface of the package 100, an electrical connection 124 formed of a non-solder metal material is formed. In accordance with an embodiment of the present disclosure, the electrical connection device 124 includes an under-bump metallurgy (UBM) or a metal pad. In other embodiments, the electrical connection device 124 includes a metal post, such as a copper post. In the disclosure of the present application, the electrical connection device 124 is a metal pad 124, however it may have other forms. Metal pad 124 can comprise copper, aluminum, titanium, nickel, palladium, gold, or a multilayer thereof. In accordance with some embodiments of the present disclosure, as shown in FIG. 1, the bottom surface of the metal pad 124 protrudes beyond the bottom surface of the bottom dielectric layer 114. In other embodiments, the bottom surface of the metal pad 124 is flush with the bottom surface of the bottom dielectric layer 114. Solder region 126 may be attached to the bottom surface of metal pad 124.

在裝置晶粒102的背側上,形成傳導特徵,例如RDL 116(包含金屬跡線(metal trace)、金屬墊與金屬通路)。根據本申請案揭示內容的一些實施例,經由複數個通路(via)互連複數層RDL 116。根據其他實施例,有單層RDL 116。 On the back side of the device die 102, conductive features are formed, such as RDL 116 (including metal traces, metal pads and metal vias). In accordance with some embodiments of the present disclosure, the plurality of layers of RDLs 116 are interconnected via a plurality of vias. According to other embodiments, there is a single layer of RDL 116.

再參閱圖1,形成金屬墊128。在本文中,由於金屬墊128係用於形成雷射標記,因而稱為雷射標記墊。根據本申請案揭示內容的一些實施例,在RDL 116的頂層中,形成雷射標記墊128。根據其他實施例,在非頂層的RDL層中,形成雷射標記墊128。雷射標記墊128可為電性浮接(electrically floating)。或者,雷射標記墊128係經由金屬跡線144而電連接至其他傳導特徵,例如RDL 116與/或貫穿通路122,該金屬跡線144係RDL 116的部分。例如,雷射標記墊128可接地。在相同的金屬層中,同時形成雷射標記墊128與RDL 116。 Referring again to Figure 1, a metal pad 128 is formed. Herein, since the metal pad 128 is used to form a laser mark, it is called a laser mark pad. In accordance with some embodiments of the present disclosure, in the top layer of the RDL 116, a laser marking pad 128 is formed. According to other embodiments, a laser marking pad 128 is formed in the non-top layer RDL layer. The laser marker pad 128 can be electrically floating. Alternatively, the laser marker pad 128 is electrically connected to other conductive features, such as RDL 116 and/or through via 122, via metal traces 144, which is part of RDL 116. For example, the laser marker pad 128 can be grounded. In the same metal layer, the laser mark pad 128 and the RDL 116 are simultaneously formed.

在一些實施例中,形成密封環130以包圍雷射標記墊128,其中圖8中可找到例示的密封環130。如圖1所示,在與雷射標記墊128相同的金屬層中,形成密封環130。根據本申請案揭示內容的一些實施例,在單層的RDL 116中,形成密封環130。在其他實施例中,密封環30延伸至複數層的RDL 116中。密封環130可電性浮接,並且可完全被介電材料包圍。在其他實施例中,密封環130係電耦合至其他傳導特徵,例如RDL 116與/或貫穿通路122。在形成雷射標記墊128時,可同時形成密封環130。因此,密封環130、RDL 116與雷射標記墊128可由相同材料製成,並且可具有相同組成。或者,不形成包圍雷射標記墊128的密封環。 In some embodiments, a seal ring 130 is formed to enclose the laser marker pad 128, wherein the illustrated seal ring 130 can be found in FIG. As shown in FIG. 1, a seal ring 130 is formed in the same metal layer as the laser mark pad 128. In accordance with some embodiments of the present disclosure, in a single layer of RDL 116, a seal ring 130 is formed. In other embodiments, the seal ring 30 extends into the RDL 116 of the plurality of layers. The seal ring 130 can be electrically floated and can be completely surrounded by a dielectric material. In other embodiments, the seal ring 130 is electrically coupled to other conductive features, such as the RDL 116 and/or the through passage 122. When the laser marking pad 128 is formed, the sealing ring 130 can be formed at the same time. Thus, the seal ring 130, the RDL 116, and the laser marker pad 128 can be made of the same material and can have the same composition. Alternatively, a seal ring surrounding the laser marker pad 128 is not formed.

根據一些實施例,雷射標記墊128與密封環130的底部表面係高於晶粒附接膜110的頂部表面與模塑料120的頂部表面。介電層118之一(圖1中標示為118A)係形成在雷射標記墊128與密封環130下方,個別介電層118A的頂部表面係與雷射標記墊128的底部表面接觸。介電層118A的底部表面可接觸晶粒附接膜110的頂部表面與模塑料120的頂部表面。 According to some embodiments, the bottom surface of the laser marker pad 128 and the seal ring 130 is higher than the top surface of the die attach film 110 and the top surface of the molding compound 120. One of the dielectric layers 118 (labeled 118A in FIG. 1) is formed below the laser marking pads 128 and the sealing ring 130, and the top surface of the individual dielectric layers 118A is in contact with the bottom surface of the laser marking pad 128. The bottom surface of the dielectric layer 118A may contact the top surface of the die attach film 110 and the top surface of the molding compound 120.

亦如圖1所示,形成介電層131。介電層131的底部表面係接觸介電層118的頂部表面。再者,介電層131的底部表面亦接觸RDL 116與 雷射標記墊128的頂部表面。根據本申請案揭示內容的一些實施例,介電層131係由聚合物形成,因而在本申請案中亦稱為聚合物層131。應理解介電層131可由非聚合物材料形成。形成聚合物層131的範例材料包含但不限於PBO、BCB、聚亞醯胺以及類似物。 As also shown in FIG. 1, a dielectric layer 131 is formed. The bottom surface of the dielectric layer 131 contacts the top surface of the dielectric layer 118. Furthermore, the bottom surface of the dielectric layer 131 also contacts the RDL 116 and The top surface of the laser marking pad 128. In accordance with some embodiments of the present disclosure, dielectric layer 131 is formed from a polymer and is therefore also referred to as polymer layer 131 in this application. It should be understood that the dielectric layer 131 may be formed of a non-polymeric material. Exemplary materials for forming polymer layer 131 include, but are not limited to, PBO, BCB, polyamidoamine, and the like.

參閱圖2,將膠帶133層疊於聚合物層131上,並且可經由熱硬化而黏著至聚合物層131。膠帶133可提供保護且強化下方的封裝結構。膠帶133亦阻擋光穿入下方的封裝結構,減少其反效果。在封裝的後續切割製程過程中,膠帶133亦協助減少碎裂(chipping)。根據一些實施方式,可由不同材料形成膠帶133與聚合物層131。 Referring to FIG. 2, the tape 133 is laminated on the polymer layer 131, and may be adhered to the polymer layer 131 via heat hardening. Tape 133 provides protection and strengthens the underlying package structure. The tape 133 also blocks light from penetrating into the underlying package structure, reducing its counter-effect. The tape 133 also assists in reducing chipping during subsequent cutting processes of the package. According to some embodiments, the tape 133 and the polymer layer 131 may be formed of different materials.

參閱圖3,進行雷射標記,以於膠帶133與介電層131中形成雷射標記132,其中雷射標記132包含形成於膠帶133與介電層131中的溝渠。使用雷射光束134進行雷射標記,該雷射光束134燃燒且移除部分的膠帶133與介電層131。根據本申請案揭示內容的一些實施例,膠帶133與介電層131燃燒的部分係與雷射標記墊128重疊。雷射標記墊128作為保護層,其中雷射光束134無法穿透雷射標記墊128破壞在雷射標記墊128下方的層與裝置。因此,雷射標記墊128具有防止雷射光束134達到下方的裝置晶粒102與下方的RDL 116之功能。 Referring to FIG. 3, a laser marking is performed to form a laser mark 132 in the tape 133 and the dielectric layer 131, wherein the laser mark 132 includes a trench formed in the tape 133 and the dielectric layer 131. The laser beam 134 is used to perform laser marking, which burns and removes portions of the tape 133 from the dielectric layer 131. In accordance with some embodiments of the present disclosure, the portion of tape 133 that is burned with dielectric layer 131 overlaps with laser marking pad 128. The laser marking pad 128 acts as a protective layer in which the laser beam 134 cannot penetrate the laser marking pad 128 to break the layers and devices beneath the laser marking pad 128. Thus, the laser marker pad 128 has the function of preventing the laser beam 134 from reaching the underlying device die 102 and the underlying RDL 116.

雷射標記132可包含字母、數字、圖形或可用於辨識的任何其他符號。例如,圖8係說明一些例示的雷射標記134,其包含字母與數字。雷射標記132可用以辨識產品、製程順序、個別封裝的批號、或是用以追蹤個別封裝的任何其他資訊。在雷射標記之後,雷射標記墊128的一些部分係經由形成雷射標記132的渠道而暴露。 Laser marker 132 can contain letters, numbers, graphics, or any other symbol that can be used for identification. For example, Figure 8 illustrates some exemplary laser markers 134 that contain letters and numbers. The laser marker 132 can be used to identify the product, the process sequence, the batch number of the individual package, or any other information used to track individual packages. After the laser marking, portions of the laser marking pad 128 are exposed via the channels forming the laser markings 132.

圖4係說明移除膠帶133與介電層131的一些部分,以暴露金屬墊116’,其可為RDL 116的部分。因此,在介電層131與膠帶133中形成開口136。根據一些實施例,經由使用雷射光束燃燒膠帶133與介電層118而達到開口136的形成。根據其他實施例,經由光微影製程,形成 開口136,其中膠帶133與介電層131係被蝕刻。在所得到的結構中,開口136與雷射標記132的底部表面可為實質上齊平,亦即與雷射標記墊128與RDL墊116’的頂部表面在相同平面。 4 illustrates the removal of tape 133 from portions of dielectric layer 131 to expose metal pad 116', which may be part of RDL 116. Therefore, an opening 136 is formed in the dielectric layer 131 and the tape 133. According to some embodiments, the formation of the opening 136 is achieved via the use of a laser beam to burn the tape 133 with the dielectric layer 118. According to other embodiments, the formation is performed via a photolithography process Opening 136, wherein tape 133 and dielectric layer 131 are etched. In the resulting construction, the opening 136 and the bottom surface of the laser marker 132 can be substantially flush, i.e., in the same plane as the top surface of the laser marker pad 128 and the RDL pad 116'.

圖5係說明焊料區138的形成。根據本申請案揭示內容的一些實施例,進行植球(ball placement)步驟,以將焊球落下在開口136(圖3)中,而後進行回銲製程,將焊球回銲而形成焊料區138。焊料區138包含接觸RDL墊116’之頂部表面的部分,並且亦可包含在開口136外的一些部分。在其他實施例中,略過焊料區形成步驟。而是如圖6所示,由附接至封裝元件200的焊料區提供用於形成焊料區138’(圖6)的焊料。 FIG. 5 illustrates the formation of solder region 138. In accordance with some embodiments of the present disclosure, a ball placement step is performed to drop the solder balls in openings 136 (FIG. 3), followed by a reflow process to reflow the solder balls to form solder regions 138. . Solder region 138 includes portions that contact the top surface of RDL pad 116' and may also include portions outside of opening 136. In other embodiments, the solder zone forming step is skipped. Rather, as shown in FIG. 6, solder for forming solder regions 138' (FIG. 6) is provided by solder regions attached to package component 200.

圖6係說明接合封裝200與封裝100。根據本申請案揭示內容的一些實施例,封裝200包含封裝基板202以及裝置晶粒204,其係接合至封裝基板202。可經由打線(wire bonding)、覆晶接合(flip-chip bonding)或類似方法而達到裝置晶粒204與封裝基板202的接合。根據一些實施例,裝置晶粒204包含記憶體晶粒,例如靜態隨機存取記憶體(SRAM)晶粒、動態隨機存取記憶體(DRAM)晶粒或類似物。 FIG. 6 illustrates the bonding of package 200 to package 100. In accordance with some embodiments of the present disclosure, package 200 includes package substrate 202 and device die 204 that are bonded to package substrate 202. Bonding of the device die 204 to the package substrate 202 can be achieved via wire bonding, flip-chip bonding, or the like. In accordance with some embodiments, device die 204 includes memory die, such as static random access memory (SRAM) die, dynamic random access memory (DRAM) die, or the like.

在接合製程中,將圖5所示的焊料區138回銲,形成圖6所示的焊料區138’。在接合製程之後,封裝200與封裝100之間具有間隙,以及雷射標記132暴露於該間隙。 In the bonding process, the solder region 138 shown in Fig. 5 is reflowed to form the solder region 138' shown in Fig. 6. After the bonding process, there is a gap between the package 200 and the package 100, and the laser mark 132 is exposed to the gap.

參閱圖7,根據本申請案揭示內容的一些實施例,在封裝200的接合之後,將底膠填充(underfill)140填入封裝100與封裝200之間的間隙。在這些實施例中,亦以底膠填充140填充雷射標記132的渠道(圖4)。據此,在雷射標記132的渠道中之部分的底膠填充140亦稱為雷射標記132’。雷射標記132’可從膠帶133的頂部表面延伸至雷射標記墊128的頂部表面。再者,雷射標記132’可與雷射標記墊128的頂部表面實質接觸。在其他實施例中,封裝100與200之間的間隙無填充底膠填 充,因此在最終封裝中(例如,使用與驅動該封裝時),雷射標記132保留渠道(參閱圖6)。在這些實施例中,雷射標記墊128的一些部分可經由雷射標記132而暴露至空氣。 Referring to FIG. 7, in accordance with some embodiments of the present disclosure, after the bonding of the package 200, an underfill 140 is filled into the gap between the package 100 and the package 200. In these embodiments, the channels of the laser marker 132 are also filled with a primer fill 140 (Fig. 4). Accordingly, the portion of the primer fill 140 in the channel of the laser marker 132 is also referred to as the laser marker 132'. The laser marker 132' can extend from the top surface of the tape 133 to the top surface of the laser marker pad 128. Further, the laser marker 132' can be in substantial contact with the top surface of the laser marker pad 128. In other embodiments, the gap between the packages 100 and 200 is not filled with a fill Charge, so in the final package (eg, when using and driving the package), the laser marker 132 retains the channel (see Figure 6). In these embodiments, portions of the laser marker pad 128 may be exposed to air via the laser marker 132.

在圖7所示的封裝中,雷射標記墊128可完全被介電材料包圍且與該介電材料接觸,該介電材料包含介電層118與131以及底膠填充140。 In the package shown in FIG. 7, the laser marker pad 128 can be completely surrounded by and in contact with a dielectric material comprising dielectric layers 118 and 131 and a primer fill 140.

圖8係根據一些實施例說明封裝100的俯視圖。如圖8所示,雷射標記132可與雷射標記墊128重疊,其中所有雷射標記132係形成於雷射標記墊128上。根據本申請案揭示內容的一些實施例,形成密封環130,其形成包圍雷射標記墊128的環。在一些實施例中,有複數個分離的雷射標記墊128,其係彼此實質分離。根據一些實施例,該分離的雷射標記墊128亦可彼此電隔離。依照封裝100的尺寸與雷射標記132的理想尺寸,選擇雷射標記墊128的尺寸。例如,雷射標記墊的長度「a」與寬度「b」之範圍係約1mm至約5mm,以及相鄰雷射標記墊128之間的間隔「S」可大於約500μm。然而,可理解本申請案所述之值係僅為範例,且可變化為不同的值。 FIG. 8 illustrates a top view of package 100 in accordance with some embodiments. As shown in FIG. 8, the laser marker 132 can overlap the laser marker pad 128, with all of the laser marker 132 being formed on the laser marker pad 128. In accordance with some embodiments of the present disclosure, a seal ring 130 is formed that forms a ring that surrounds the laser marker pad 128. In some embodiments, there are a plurality of separate laser marking pads 128 that are substantially separated from one another. According to some embodiments, the separate laser marking pads 128 may also be electrically isolated from one another. The size of the laser marker pad 128 is selected in accordance with the dimensions of the package 100 and the desired dimensions of the laser marker 132. For example, the length "a" and width "b" of the laser marking pad may range from about 1 mm to about 5 mm, and the spacing "S" between adjacent laser marking pads 128 may be greater than about 500 [mu]m. However, it is to be understood that the values described in this application are merely examples and may vary to different values.

根據一些實施例,如結合圖7與圖8所示,分離的雷射墊128之各個部分係完全被介電材料包圍,在這些實施例中,該分離的雷射標記墊128之表面未與傳導材料接觸。例如,分離的雷射標記墊128的底部表面與側壁表面係與介電層接觸,如圖7所示。分離的雷射標記墊128之頂部表面係與聚合物層131接觸。再者,分離的雷射標記墊128之頂部表面的一些部分如圖7的實施例所示係與底膠填充140接觸,或是如圖6的實施例所示係與空氣接觸。 According to some embodiments, as shown in connection with Figures 7 and 8, the various portions of the separated laser pad 128 are completely surrounded by a dielectric material, in these embodiments, the surface of the separate laser marking pad 128 is not Conductive material contact. For example, the bottom surface and sidewall surfaces of the separated laser marker pads 128 are in contact with the dielectric layer, as shown in FIG. The top surface of the separated laser marking pad 128 is in contact with the polymer layer 131. Moreover, portions of the top surface of the separated laser marker pad 128 are in contact with the primer fill 140 as shown in the embodiment of FIG. 7, or are in contact with air as shown in the embodiment of FIG.

在雷射標記過程中,產生熱且造成雷射標記墊128附近的介電層燃燒,造成介電層118與RDL 116變形以及其他信賴度問題。據此,理想的是將雷射標記墊128中產生的熱快速消散至其他區域與特徵, 因而將雷射標記墊128的溫度限制在層118、131與133的燃燒/變形溫度之下。在一些實施例中,密封環130可散熱。為了改良散熱效率,密封環130可具有較大寬度W1,例如大於20μm,以提供低抗熱性,因而密封環130的過熱部分可快速散熱至密封環130的其他部分。在其他實施例中,未形成密封環130。 During the laser marking process, heat is generated and causes the dielectric layer near the laser marking pad 128 to burn, causing deformation of the dielectric layer 118 and the RDL 116 and other reliability issues. Accordingly, it is desirable to quickly dissipate the heat generated in the laser marker pad 128 to other areas and features. The temperature of the laser marker pad 128 is thus limited below the combustion/deformation temperatures of the layers 118, 131 and 133. In some embodiments, the seal ring 130 can dissipate heat. In order to improve heat dissipation efficiency, the seal ring 130 may have a larger width W1, for example, greater than 20 μm, to provide low heat resistance, and thus the overheated portion of the seal ring 130 may be quickly dissipated to other portions of the seal ring 130. In other embodiments, the seal ring 130 is not formed.

再者,為了改良散熱效率,一些或全部雷射標記墊128經由金屬跡線142互連,如圖9所示之實施例。據此,當進行雷射標記以於雷射標記墊128其中之一的上方形成雷射標記132時,可散熱至相鄰的雷射標記墊128。根據一些實施例,金屬跡線142的寬度W2係大於約20μm或約40μm或更大,以提供較佳之散熱。寬度W2係更小於雷射標記墊128的寬度b。 Moreover, to improve heat dissipation efficiency, some or all of the laser marker pads 128 are interconnected via metal traces 142, as in the embodiment shown in FIG. Accordingly, when the laser marking is performed to form the laser mark 132 over one of the laser marking pads 128, heat can be dissipated to the adjacent laser marking pad 128. According to some embodiments, the width W2 of the metal traces 142 is greater than about 20 [mu]m or about 40 [mu]m or greater to provide better heat dissipation. The width W2 is less than the width b of the laser marking pad 128.

除了金屬跡線142,可形成其他的金屬跡線144,以進一步散熱至附近特徵。例如,如圖9所示,金屬跡線144將金屬墊128連接至一些貫穿通路122(標示為122A),因而在雷射標記製程中,貫穿通路122A係作為散熱體(heat sink)以協助降低雷射標記墊128的溫度。亦可於圖7中發現例示的金屬跡線144,圖7說明雷射標記墊128其中之一係連接至貫穿通路122A。根據一些實施例,貫穿通路122A係接地。在其他實施例中,貫穿通路122A係信號通路,其係用以攜載低變化信號(具有低頻率,例如其低於約1MHz或1kHz)。 In addition to metal traces 142, other metal traces 144 may be formed to further dissipate heat to nearby features. For example, as shown in FIG. 9, metal traces 144 connect metal pads 128 to some through vias 122 (labeled 122A), such that in the laser marking process, through vias 122A act as heat sinks to assist in lowering The temperature of the laser marking pad 128. The illustrated metal traces 144 can also be found in Figure 7, which illustrates one of the laser marker pads 128 being coupled to the through via 122A. According to some embodiments, the through passage 122A is grounded. In other embodiments, the through-passage 122A is a signal path that carries a low-varying signal (having a low frequency, such as less than about 1 MHz or 1 kHz).

在圖8與圖9中,雷射標記墊128與雷射標記132係直接形成於裝置晶粒102上方並且與裝置晶粒102重疊。在其他實施例中,如圖10所示,其亦說明封裝100的俯視圖,雷射標記墊128與雷射標記132並未與裝置晶粒102對準。在這些實施例中,由於雷射標記墊128與裝置晶粒102之間的距離增加,從雷射標記墊128消散的熱較不可能不利影響裝置晶粒102。 In FIGS. 8 and 9, the laser marker pad 128 and the laser marker 132 are formed directly over the device die 102 and overlap the device die 102. In other embodiments, as shown in FIG. 10, which also illustrates a top view of package 100, laser marking pad 128 and laser marking 132 are not aligned with device die 102. In these embodiments, the heat dissipated from the laser marker pad 128 is less likely to adversely affect the device die 102 due to the increased distance between the laser marker pad 128 and the device die 102.

根據其他實施例,圖11與圖12係說明封裝100的俯視圖,其中雷 射標記墊128係大的雷射標記墊,其佔據封裝100的主要區域,其中雷射標記墊128可具有複數個雷射標記132形成於其上。如圖11所示,在這些實施例中,該大的雷射標記墊128可為固體金屬墊。在圖12所示的實施例中,再次為單一雷射標記墊128以及形成於雷射標記墊128中的複數個槽146。槽146貫穿雷射標記墊128。複數個槽146有助於降低封裝100中的應力,其中由於雷射標記墊128的熱膨脹係數(coefficient of thermal expansion,CTE)與周圍介電質118、131及140之間差而產生該應力。在圖11與圖12中的實施例中,由於雷射標記墊128的面積大,因而成為雷射標記中具有良好散熱的有利特徵。 11 and 12 illustrate a top view of package 100, in which Ray The shot marker pad 128 is a large laser marker pad that occupies a major area of the package 100, wherein the laser marker pad 128 can have a plurality of laser markers 132 formed thereon. As shown in FIG. 11, in these embodiments, the large laser marking pad 128 can be a solid metal pad. In the embodiment shown in FIG. 12, again a single laser marker pad 128 and a plurality of slots 146 formed in the laser marker pad 128. The slot 146 extends through the laser marking pad 128. The plurality of slots 146 help to reduce stress in the package 100, which is due to the difference between the coefficient of thermal expansion (CTE) of the laser marker pad 128 and the surrounding dielectrics 118, 131, and 140. In the embodiment of Figures 11 and 12, since the area of the laser marking pad 128 is large, it is an advantageous feature of good thermal dissipation in the laser marking.

可調整雷射標記墊128與槽146的面積,使得雷射標記墊128的金屬層之金屬密度不會太高。該金屬密度係所有金屬特徵(包含RDL 116與雷射標記墊128)的總面積除以封裝100的面積之比例。在一些實施例中,控制該金屬密度低於約百分之50。 The area of the laser marker pad 128 and the slot 146 can be adjusted such that the metal density of the metal layer of the laser marker pad 128 is not too high. The metal density is the ratio of the total area of all metal features (including RDL 116 and laser marking pad 128) divided by the area of package 100. In some embodiments, the metal density is controlled to be less than about 50 percent.

本申請案揭示內容的實施例具有數個有利的特徵。藉由形成雷射標記墊,該雷射標記墊控制雷射標記的深度。保護封裝中的裝置晶粒與重佈線免於受到雷射標記可能造成的破壞。由於可同時形成雷射標記墊與重佈線,因此本申請案揭示內容的實施例不會造成額外的製造成本。 Embodiments of the disclosure of the present application have several advantageous features. The laser marking pad controls the depth of the laser marking by forming a laser marking pad. Protect the device die and rewiring in the package from damage that may be caused by laser marking. Embodiments of the disclosure of the present application do not incur additional manufacturing costs since the laser marking pads and rewiring can be formed simultaneously.

根據本申請案揭示內容的一些實施例,封裝包含裝置晶粒、將該裝置晶粒封裝於其中的模塑料,以及位於該裝置晶粒與該模塑料上方的複數個重佈線。雷射標記墊與該複數個重佈線其中之一齊平,其中該雷射標記墊與該複數個重佈線之一係由相同的傳導材料形成。在聚合物層上方,附接膠帶。雷射標的穿過該膠帶與該聚合物層。該雷射標記延伸至該雷射標記墊的頂部表面。 In accordance with some embodiments of the present disclosure, a package includes a device die, a molding compound in which the device die is packaged, and a plurality of redistributions over the device die and the molding compound. The laser marking pad is flush with one of the plurality of rewirings, wherein the laser marking pad and one of the plurality of rewirings are formed from the same conductive material. Adhesive tape is attached over the polymer layer. The laser is passed through the tape and the polymer layer. The laser marking extends to the top surface of the laser marking pad.

根據本申請案揭示內容的其他實施例,封裝包含第一封裝,其包含至少一第一介電層、在該至少一介電層中的第一複數個重佈線、 位於該第一複數個重佈線上方並且電耦合至該第一複數個重佈線的裝置晶粒、將該裝置晶粒封裝於其中的模塑料、穿過該模塑料的貫穿通路、位於該裝置晶粒上方的至少一第二介電層、以及在該至少一第二介電層中的第二複數個重佈線。該第二複數個重佈線其中之一係經由該貫穿通路而電耦合至該第一複數個重佈線其中之一。該封裝進一步包含在該至少一第二介電層中的金屬墊,其中該金屬墊係連接至該貫穿通路、在該至少一第二介電層上方的第三介電層、從該第三介電層之頂部表面延伸至該金屬墊之頂部表面的雷射標記、以及在該第一封裝上方且接合至該第一封裝的第二封裝。 In accordance with other embodiments of the present disclosure, a package includes a first package including at least one first dielectric layer, a first plurality of redistributions in the at least one dielectric layer, a device die located above the first plurality of redistributions and electrically coupled to the first plurality of rewirings, a molding compound in which the device die is encapsulated, a through via through the molding compound, and a crystal in the device At least one second dielectric layer over the particles, and a second plurality of redistributions in the at least one second dielectric layer. One of the second plurality of redistributions is electrically coupled to one of the first plurality of redistributions via the through via. The package further includes a metal pad in the at least one second dielectric layer, wherein the metal pad is connected to the through via, a third dielectric layer over the at least one second dielectric layer, from the third A top surface of the dielectric layer extends to a laser mark on a top surface of the metal pad, and a second package over the first package and bonded to the first package.

根據本申請案揭示內容的其他實施例,方法包含形成封裝,其包含至少一第一介電層、在該至少一第一介電層中的第一複數個重佈線、位於該第一複數個重佈線上方並且電耦合至該第一複數個重佈線的裝置晶粒、將該裝置晶粒封裝於其中的模塑料、穿過該模塑料的貫穿通路、位於該裝置晶粒上方的至少一第二介電層、以及在該至少一第二介電層中的第二複數個重佈線,其中該第二複數個重佈線係經由該貫穿通路而電耦合至該第一複數個重佈線,以及在該至少一第二介電層中的金屬墊。在該至少一第二介電層上方形成聚合物層,在該聚合物層上方附接膠帶。該方法進一步包含進行雷射標記,以於該聚合物層與該膠帶中形成雷射標記,該金屬墊的部分暴露至該雷射標記。 In accordance with other embodiments of the present disclosure, a method includes forming a package including at least a first dielectric layer, a first plurality of redistributions in the at least one first dielectric layer, and the first plurality of a device die over the redistribution and electrically coupled to the first plurality of redistributed devices, a molding compound encapsulating the device die therein, a through via through the molding compound, and at least one portion above the die of the device a second dielectric layer, and a second plurality of rewirings in the at least one second dielectric layer, wherein the second plurality of rewirings are electrically coupled to the first plurality of rewirings via the through vias, and a metal pad in the at least one second dielectric layer. A polymer layer is formed over the at least one second dielectric layer, and an adhesive tape is attached over the polymer layer. The method further includes performing a laser marking to form a laser mark in the polymer layer and the tape, a portion of the metal pad being exposed to the laser mark.

前述內容概述一些實施方式的特徵,因而熟知此技藝之人士可更加理解本申請案揭示內容之各方面。熟知此技藝之人士應理解可輕易使用本申請案揭示內容作為基礎,用於設計或修飾其他製程與結構而實現與本申請案所述之實施方式具有相同目的與/或達到相同優點。熟知此技藝之人士亦應理解此均等架構並不脫離本申請案揭示內容的精神與範圍,以及熟知此技藝之人士可進行各種變化、取代與替換,而不脫離本申請案揭示內容之精神與範圍。 The foregoing is a summary of the features of the embodiments, and those skilled in the art can understand the various aspects of the disclosure. Those skilled in the art will appreciate that the disclosure of the present application can be readily utilized as a basis for designing or modifying other processes and structures to achieve the same objectives and/or the same advantages as the embodiments described herein. It should be understood by those skilled in the art that the present invention is not limited by the spirit and scope of the present disclosure, and that various changes, substitutions and substitutions can be made by those skilled in the art without departing from the spirit of the disclosure. range.

100‧‧‧封裝 100‧‧‧Package

102‧‧‧裝置晶粒 102‧‧‧ device grain

122‧‧‧貫穿通路 122‧‧‧through path

128‧‧‧雷射標記墊 128‧‧‧Laser marker pad

130‧‧‧密封環 130‧‧‧Seal ring

132‧‧‧雷射標記 132‧‧‧Laser Mark

Claims (10)

一種封裝,其包括:第一封裝,其包括:裝置晶粒;模塑料,其將該裝置晶粒封裝於其中;複數個重佈線,其位於該裝置晶粒與該模塑料上方;雷射標記墊,其係與該複數個重佈線其中之一齊平,其中該雷射標記與該複數個重佈線其中之一係由相同的傳導材料形成;聚合物層,其係位於該雷射標記墊與該複數個重佈線上方;膠帶,其係位於該聚合物層上方;以及雷射標記,其穿過該膠帶與該聚合物層,其中該雷射標記延伸至該雷射標記墊的頂部表面。 A package comprising: a first package comprising: device die; a molding compound encapsulating the device die therein; a plurality of rewirings located over the device die and the molding compound; a laser marking a pad, which is flush with one of the plurality of redistributions, wherein the laser mark and one of the plurality of redistributions are formed of the same conductive material; the polymer layer is located on the laser mark pad and Above the plurality of rewirings; a tape over the polymer layer; and a laser marking through the tape and the polymer layer, wherein the laser marking extends to a top surface of the laser marking pad. 如請求項1所述的封裝,進一步包括:貫穿通路,其穿過該模塑料;以及金屬跡線,其將該雷射標記墊連接至該貫穿通路。 The package of claim 1, further comprising: a through via that passes through the molding compound; and a metal trace that connects the laser marking pad to the through via. 如請求項2所述的封裝,其中該貫穿通路係接地。 The package of claim 2, wherein the through via is grounded. 如請求項1所述的封裝,其中該雷射標記包括形成於該聚合物層與該膠帶中的渠道,以及該封裝進一步包括:第二封裝,其係位於該第一封裝上方;焊料區域,其將該第一封裝接合至該第二封裝;以及在該第一封裝與該第二封裝之間的間隙中的底膠填充,其中位於該聚合物層與該膠帶中的渠道中之部分的該底膠填充係形 成雷射標記。 The package of claim 1, wherein the laser mark comprises a channel formed in the polymer layer and the tape, and the package further comprises: a second package located above the first package; a solder region, Bonding the first package to the second package; and underfill in a gap between the first package and the second package, wherein a portion of the polymer layer and the channel in the tape Primer filling system Into the laser mark. 如請求項1所述的封裝,進一步包括:其他的雷射標記墊;其他的雷射標記,其穿過該膠帶與該聚合物層,其中該其他的雷射標記延伸至該其他的雷射標記墊之頂部表面;以及金屬跡線,其係與該雷射標記墊與該其他的雷射標記墊互連,其中該金屬跡線係窄於該雷射標記墊與該其他的雷射標記。 The package of claim 1 further comprising: other laser marking pads; other laser markings that pass through the tape and the polymer layer, wherein the other laser markings extend to the other laser a top surface of the marking pad; and a metal trace interconnected with the laser marking pad and the other laser marking pad, wherein the metal trace is narrower than the laser marking pad and the other laser marking . 如請求項1所述的封裝,其中該雷射標記墊包括複數個槽於其中,該複數個槽穿過該雷射標記墊。 The package of claim 1, wherein the laser marking pad comprises a plurality of slots therein, the plurality of slots passing through the laser marking pad. 一種方法,其包括:形成第一封裝,其包括:至少一第一介電層;第一複數個重佈線,其係位於該至少一第一介電層中;裝置晶粒,其係位於該第一複數個重佈線上方並且電耦合至該第一複數個重佈線;模塑料,封裝該裝置晶粒於其中;貫穿通路,其穿過該模塑料;至少一第二介電材料,其係位於該裝置晶粒上方;第二複數個重佈線,其係位於該至少一第二介電層中,其中該第二複數個重佈線係經由該貫穿通路而電耦合至該第一複數個重佈線;以及金屬墊,其係位於該至少一第二介電層中;在該至少一第二介電層上方,形成聚合物層;在該聚合物層上方,附接膠帶;以及進行雷射標記,以於該聚合物層與該膠帶中形成雷射標記, 部分的該金屬墊暴露至該雷射標記。 A method comprising: forming a first package comprising: at least one first dielectric layer; a first plurality of redistributions disposed in the at least one first dielectric layer; a device die located at the a first plurality of rewirings and electrically coupled to the first plurality of rewirings; a molding compound encapsulating the device die therein; a through passage through which the molding compound; at least a second dielectric material, Located above the device die; a second plurality of redistributions disposed in the at least one second dielectric layer, wherein the second plurality of rewirings are electrically coupled to the first plurality of weights via the through via a wiring; and a metal pad in the at least one second dielectric layer; forming a polymer layer over the at least one second dielectric layer; attaching a tape over the polymer layer; and performing laser Marking to form a laser mark in the polymer layer and the tape, A portion of the metal pad is exposed to the laser marking. 如請求項7所述的方法,進一步包括:在該聚合物層與該膠帶中形成開口,以暴露複數個金屬墊;以及形成焊料區,其延伸至該開口中,以與該複數個金屬墊結合。 The method of claim 7, further comprising: forming an opening in the polymer layer and the tape to expose a plurality of metal pads; and forming a solder region extending into the opening to form the plurality of metal pads Combine. 如請求項7所述的方法,進一步包括:將第二封裝接合至該第一封裝;以及在該第一封裝與該第二封裝之間的間隙中,填充底膠填充,其中該底膠填充係位於該雷射標記中。 The method of claim 7, further comprising: bonding the second package to the first package; and filling a gap between the first package and the second package, wherein the underfill is filled It is located in the laser marker. 如請求項7所述的方法,其中該金屬墊阻擋用於該雷射標記中的雷射光束。 The method of claim 7 wherein the metal pad blocks a laser beam for use in the laser marking.
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CN107104087A (en) * 2016-02-22 2017-08-29 联发科技股份有限公司 Semiconductor package and forming method thereof
TWI648826B (en) * 2017-06-30 2019-01-21 台灣積體電路製造股份有限公司 Packaging and its forming method
TWI684248B (en) * 2016-08-11 2020-02-01 日月光半導體製造股份有限公司 Semiconductor device packages and stacked package assemblies including high density interconnections
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Publication number Priority date Publication date Assignee Title
CN107104087A (en) * 2016-02-22 2017-08-29 联发科技股份有限公司 Semiconductor package and forming method thereof
US10483211B2 (en) 2016-02-22 2019-11-19 Mediatek Inc. Fan-out package structure and method for forming the same
TWI684248B (en) * 2016-08-11 2020-02-01 日月光半導體製造股份有限公司 Semiconductor device packages and stacked package assemblies including high density interconnections
TWI648826B (en) * 2017-06-30 2019-01-21 台灣積體電路製造股份有限公司 Packaging and its forming method
CN111009508A (en) * 2018-10-08 2020-04-14 三星电子株式会社 Semiconductor package
TWI754148B (en) * 2019-05-10 2022-02-01 大陸商業成科技(成都)有限公司 Tft array substrate and method for fabricating tft array substrate

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