TW201542808A - Post chemical mechanical polishing formulations and method of use - Google Patents

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amines and ammonium-containing salts. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-lk dielectric material or the copper interconnect material.

Description

Chemical mechanical polishing formula and its use method

The present invention generally relates to compositions for removing such materials from microelectronic devices having residues and/or contaminants thereon.

Microelectronic device wafers are used to form integrated circuits. Microelectronic device wafers include substrates (such as germanium) in which regions of different materials that are patterned to deposit insulating, conductive, or semi-conductive properties are patterned.

In order to obtain accurate patterning, it is necessary to remove excess material for forming a layer on the substrate. In addition, to create functional and reliable circuits, flat or planar microelectronic wafer surfaces should be prepared prior to subsequent processing. Therefore, specific surfaces of the microelectronic device wafer need to be removed and/or ground.

Chemical mechanical polishing or planarization ("CMP") is a method of removing material from the surface of a microelectronic device wafer and grinding it by coupling a physical process such as abrasion with a chemical process such as oxidation or clamping (more specifically , planarization) the process of the surface. The most basic form of CMP involves applying a slurry (eg, a solution of abrasive and reactive chemicals) to a polishing pad that polishes the surface of the microelectronic device wafer to achieve a removal, planarization, and grinding process. It is not desired that the removal or grinding process be purely physical or purely chemical, and that a synergistic combination of the two is desired to achieve rapid and uniform removal. In the manufacture of integrated circuits, CMP slurry should also be preferentially removed from metals and other materials. The film of the composite layer is such that a highly planar surface can be created for subsequent lithography, or for patterning, etching, and film processing.

Recently, copper has been gradually used for metal interconnects in integrated circuits. In a copper damascene process typically used for circuit metallization in the fabrication of microelectronic devices, the layers that must be removed and planarized include a copper layer having a thickness of about 1-1.5 microns and a copper crystal having a thickness of about 0.05-0.15 microns. Layer. The copper layers are isolated from the surface of the dielectric material by a layer of barrier material (typically about 50-300 angstroms (Å) thick that prevents copper from diffusing into the oxide dielectric material). One key to achieving good uniformity across the wafer surface after grinding is to use a CMP slurry with the correct removal selectivity for each material.

The aforementioned processing operations, including wafer substrate surface preparation, deposition, plating, etching, and chemical mechanical polishing, require different cleaning operations to ensure that the microelectronic device product is free of contaminants that would otherwise adversely affect product functionality, or even Unable to use for its intended function. Typically, the particles of such contaminants are less than 0.3 microns.

A particular problem in this regard is the residue remaining on the substrate of the microelectronic device after CMP processing. The residues include CMP materials and corrosion inhibitor compounds such as benzotriazole (BTA). If not removed, such residues can cause damage to the copper wire or severely roughen the copper metallization, as well as poor adhesion of the coating layer on the device substrate after CMP. The severe roughening of copper metallization is particularly problematic because excessively rough copper can cause poor electrical performance of the product's microelectronic devices.

Another common process for producing residues in microelectronic devices involves transferring the developed photoresist coating pattern to a gas layer that can be composed of a hard mask, an interlayer dielectric (ILD), and an etch stop layer. Phase plasma etching. Gas-phase plasma etch residues, which may include chemical elements present on the substrate and stored in the plasma gas, are typically deposited on the back-end process (BEOL) structure and interfere if not removed. Subsequent deuteration or joint formation. Conventional cleaning chemistries typically damage the ILD and absorb into the pores of the ILD, thereby increasing the dielectric constant and/or corroding the metal structure.

There is a continuing need in the art to provide compositions and methods that effectively remove residues from the substrate (eg, residues after CMP, residues after etching, and residues after ashing). These compositions are more environmentally friendly than prior art compositions and may include innovative components and, therefore, may be considered as an alternative to the compositions of the prior art.

The present invention generally relates to a composition and method for removing such residues and contaminants from a microelectronic device having residues and/or contaminants thereon. The cleaning composition of the present invention is substantially free of amines and tetraalkylammonium hydroxide. The residue may include residues after CMP, after etching, and/or after ashing.

In one aspect, a cleaning composition comprising at least one non-amine pH adjusting agent/buffering agent and at least one solvent mixture is described.

In another aspect, a method of removing such residues and contaminants from a microelectronic device having residues and contaminants thereon is described, the method comprising: comprising a microelectronic device and comprising at least one non-amine pH adjusting agent The cleaning composition of the buffering agent and the at least one solvent mixture is contacted for a sufficient period of time to at least partially remove the residues and contaminants from the microelectronic device.

Other aspects, features, and advantages will be more fully apparent from the following disclosure and the appended claims.

The present invention is generally applicable to having residues and contamination therefrom The microelectronic device removes the constituents of the materials. These compositions are particularly useful for removing residues after CMP, after etching, or after ashing.

For ease of reference, "microelectronic devices" correspond to semiconductor substrates, flat panel displays, phase change memory devices, solar panels, and solar substrates, which are manufactured for use in microelectronics, integrated circuits, or computer chip applications, Photovoltaic components, and other products of microelectromechanical systems (MEMS). Solar substrates include, but are not limited to, germanium, amorphous germanium, polycrystalline germanium, single crystal germanium, CdTe, copper indium selenide, copper indium sulfide, and gallium arsenide/gallium. The solar substrate can be doped or undoped. It should be understood that the term "microelectronic device" is not meant to be limiting, and includes any substrate that will ultimately become a microelectronic device or microelectronic assembly.

As used herein, "residue" is equivalent to particles produced during the manufacture of a microelectronic device, including, but not limited to, plasma etching, ashing, chemical mechanical polishing, wet etching, and combinations thereof.

As used herein, "contaminant" is equivalent to a chemical substance present in a CMP slurry, a reaction by-product of a polishing slurry, a chemical substance present in a wet etching composition, a reaction by-product of a wet etching composition, and Any other material that is a by-product of the CMP process, wet etch, plasma etch, or plasma ashing process.

As used herein, "post-CMP residue" is equivalent to particles from a polishing slurry (eg, containing vermiculite particles), chemicals present in the slurry, reaction by-products of the polishing slurry, carbon-rich particles, abrasive pad particles, Brush unloading particles, equipment construction material particles, metals, metal oxides, organic residues, and any other material that is a by-product of the CMP process. As defined herein, typically ground "metal" includes copper, aluminum, and tungsten.

"Low-k dielectric material" as defined herein is equivalent to any layer A material is used in the microelectronic device as a dielectric material, wherein the material has a dielectric constant of less than about 3.5. The low-k dielectric material preferably comprises a low polarity material such as a cerium-containing organic polymer, a cerium-containing organic/inorganic hybrid material, an organosilicate glass (OSG), TEOS, a fluorinated silicate glass (FSG), a dioxide Bismuth, and carbon doped oxide (CDO) glass. It should be understood that low-k dielectric materials can have different densities and different porosities.

As used herein, "coupling agent" includes such compounds as understood by the skilled artisan to be understood as a conjugate, a chelating agent, and/or a chelating agent. The tethering agent will chemically bind or physically retain the metal atoms and/or metal ions to be removed using the compositions described herein.

As defined herein, the term "barrier material" is equivalent to any technique used to seal a metal wire (eg, a copper interconnect) to reduce the diffusion of the metal (eg, copper) into the dielectric material. The smallest material. Preferred barrier layer materials include tantalum, titanium, niobium, tantalum, tungsten, cobalt, and other refractory metals and their nitrides and tellurides.

As defined herein, "post-etch residue" is equivalent to a material that remains after a gas phase plasma etching process (eg, BEOL dual damascene process), or a wet etch process. The nature of the residue after etching may be organic, organometallic, organic germanium, or inorganic, for example, germanium-containing materials, carbon-based organic materials, and etching gas residues such as oxygen and fluorine.

As defined herein, the term "ash residue" as used herein is equivalent to residual after oxidation or reduction plasma ashing used to remove hardened photoresist and/or bottom anti-reflective coating (BARC) material. s material. The nature of the residue after ashing may be organic, organometallic, organic hydrazine, or inorganic.

"Substantially free" is defined herein as less than 2% by weight, preferably less than 1% by weight, more preferably less than 0.5% by weight, and most preferably less than 0.1% by weight. "Do not Containing " is equivalent to 0%.

As used herein, "about" means equivalent to ± 5% of the stated value.

As used herein, "reaction or degradation product" includes, but is not limited to, products or by-products formed by catalysis at the surface, oxidation, reduction, reaction with constituent components, or other polymerizations; A product or material (eg, a molecule, a compound, etc.) that is combined with other substances or materials, exchanges components with other substances or materials, decomposes, recombines, or otherwise chemically and/or physically changes or transforms or By-products, including intermediates or by-products of any of the foregoing or any combination of the foregoing reactions, changes and/or transformations. It will be appreciated that the reaction or degradation product may have a greater or lesser molar mass than the original reactant.

As used herein, "applying" to a microelectronic device having residues and contaminants thereon to remove such residues and contaminants is equivalent to at least partial removal of such residues/contaminants from the microelectronic device. Cleaning effectiveness is assessed by object reduction on the microelectronic device. For example, an atomic force microscope can be used for pre-cleaning and post-cleaning analysis. The particles on the sample can be registered as an image range. A histogram (eg, Sigma Scan Pro) can be applied to filter pixels in a particular intensity (eg, 231-235) and calculate the number of particles. Particle reduction can be calculated using the following formula:

Notably, the method of determining the efficacy of the cleaning is provided as an example only and is not intended to be limiting. Alternatively, the cleaning efficacy can be considered as a percentage of the total surface covered by the particulate matter. For example, the AFM can be programmed to perform a z-plane scan to identify the relevant topographical area above a certain height threshold and then calculate the total surface area covered by the associated area. Those who are familiar with the art can easily understand the phase after cleaning. The smaller the area covered by the area, the more effective the cleaning composition will be. Preferably, at least 75% of the residue/contaminant is removed from the microelectronic device using the composition described herein, more preferably at least 90%, even more preferably at least 95%, and optimally removing at least 99% of the residue. Objects/contaminants.

The compositions described herein can be embodied as a more complete description of the various specific formulations below.

In all such compositions, when a particular component of the composition is discussed with reference to a range of weight percentages including the lower limit of zero, it is apparent that such components may or may not be present in various specific embodiments of the composition and are present In the case of such components, it may be present in a concentration as low as 0.001 weight percent based on the total weight of the components in which the components are used.

In a first aspect, the cleaning composition comprises at least one non-amine pH adjuster/buffer, at least one solvent mixture, optionally at least one complexing agent, optionally at least one surfactant, and optionally at least one Corrosion inhibitor. In one embodiment, the cleaning composition comprises, consists of, or consists essentially of: at least one non-amine pH adjuster/buffer, and at least one solvent mixture. In another embodiment, the cleaning composition comprises, consists of, or consists essentially of at least one non-amine pH adjuster/buffer, at least one solvent mixture, and at least one complexing agent. In yet another embodiment, the cleaning composition comprises, consists of, or consists essentially of at least one non-amine pH adjuster/buffer, at least one solvent mixture, and at least one interfacial activity Agent. In yet another embodiment, the cleaning composition comprises, consists of, or consists essentially of: at least one non-amine pH adjuster/buffer, at least one solvent mixture, and at least one corrosion inhibition Agent. In another embodiment, the cleaning composition comprises The following components consist of, or consist essentially of, at least one non-amine pH adjuster/buffer, at least one solvent mixture, at least one complexing agent, and at least one surfactant. In yet another embodiment, the cleaning composition comprises, consists of, or consists essentially of at least one non-amine pH adjuster/buffer, at least one solvent mixture, at least one complexing agent, And at least one corrosion inhibitor. In yet another embodiment, the cleaning composition comprises, consists of, or consists essentially of at least one non-amine pH adjuster/buffer, at least one solvent mixture, optionally at least one a surfactant, and at least one corrosion inhibitor. In another embodiment, the cleaning composition comprises, consists of, or consists essentially of at least one non-amine pH adjuster/buffer, at least one solvent mixture, at least one complexing agent, at least A surfactant, and at least one corrosion inhibitor.

Regardless of the specific example, the cleaning compositions described herein are substantially free or free of amines and ammonium salts, such as quaternary ammonium bases. Moreover, the composition preferably contains substantially no or no at least one of: prior to use (eg, cleaning chemistry): an oxidizing agent; a fluoride containing source; an abrasive material; crosslinked organic polymer particles; . In addition, the cleaning composition should not cure to form a polymeric solid, such as a photoresist. With respect to the present invention, "amine" is defined as at least one primary, secondary or tertiary amine, ammonia, and/or quaternary ammonium hydroxide compound (eg, ammonium hydroxide, alkylammonium hydroxide, alkyl hydroxide) An aryl ammonium or the like, which is limited to (i) a guanamine group, (ii) a substance including both a carboxylic acid group and an amine group, (iii) a surfactant including an amine group, and (iv) an amine group thereof Substance (e.g., attached to an aryl or heterocyclic moiety) is not considered an "amine" according to this definition. The chemical formula of the amine may be represented by NR ¹ R ² R ³ wherein R ¹ , R ² and R ³ may be the same or different from each other and are selected from hydrogen, a linear or branched C ₁ -C ₆ alkyl group (eg, methyl, Ethyl, propyl, butyl, pentyl, hexyl), C ₆ -C ₁₀ aryl (eg, benzyl), linear or branched C ₁ -C ₆ alkanol (eg, methanol, ethanol, propanol) A group consisting of butanol, pentanol, hexanol, and combinations thereof, wherein R ¹ , R ² and R ^{3 are} not all hydrogen. The quaternary ammonium hydroxide compound has the formula R ₁ R ₂ R ₃ R ₄ NOH, wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are hydrogen, C ₁ -C ₆ alkyl (for example, Methyl, ethyl, propyl, butyl, pentyl or hexyl), and substituted or unsubstituted C ₆ -C ₁₀ aryl (for example, benzyl); and alkanolamine.

The at least one non-amine pH adjuster/buffer comprises strontium ions and has the formula R ₁ R ₂ R ₃ R ₄ POH, wherein R ₁ , R ₂ , R ₃ and R ₄ are the same or different from each other and are hydrogen, C _1- C ₆ alkyl (for example, methyl, ethyl, propyl, butyl, pentyl or hexyl), and substituted or unsubstituted C ₆ -C ₁₀ aryl (for example, benzyl), for example At least one of the following: tetrabutylphosphonium hydroxide (TBPH), tetramethylhydrazine hydroxide, tetraethylhydrazine hydroxide, tetrapropylphosphonium hydroxide, benzyltriphenylhydrazine hydroxide, and hydrogen peroxide Triphenyl hydrazine, ethyl triphenyl hydrazine hydroxide, N-propyl triphenyl hydrazine hydroxide, hydrazine hydroxide (hydroxymethyl) hydrazine, and combinations thereof. Preferably, the at least one non-amine pH adjusting agent/buffering agent comprises TBPH. In addition to the pH adjusting agent containing barium ions, potassium hydroxide, barium hydroxide, and barium hydroxide may be added to the cleaning composition.

The at least one solvent mixture comprises at least one of water, polyol, hydrazine, or a combination thereof, wherein the polyol may include at least one selected from the group consisting of ethylene glycol, propylene glycol, neopentyl glycol , glycerin (also known as glycerol), diethylene glycol, dipropylene glycol, 1,4-butanediol, 2,3-butanediol, 1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol, and combinations thereof. The crucible may include at least one selected from the group consisting of tetramethylene sulfonium (cyclobutane), dimethyl hydrazine, diethyl hydrazine, bis(2-hydroxyethyl) hydrazine, methylcyclobutyl hydrazine, Ethylcyclobutyl hydrazine, and combinations thereof. Or, or otherwise, The at least one solvent mixture may include 1,2-hydroxyethylpyrrolidone. Preferably, the at least one organic solvent comprises water, tetramethylene guanidine, or a combination thereof.

The complexing agent may include at least one of the following: ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N',N'-tetraacetic acid (CDTA), 4-( 2-hydroxyethyl) Porphyrin (HEM), N-amine ethylpipe (N-AEP), glycine, ascorbic acid, imine diacetic acid (IDA), 2-(hydroxyethyl)imine diacetic acid (HIDA), nitrogen triacetic acid, alanine, arginine, aspartate Aminic acid, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, guanidine Aminic acid, serine, threonine, tryptophan, tyrosine, valine, gallic acid, boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid, betaine, dimethylglyoxime, formic acid , fumaric acid, gluconic acid, glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalic acid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malic acid, Malonic acid, phenylglycolic acid, 2,4-pentanedione, phenylacetic acid, citric acid, valine acid, propionic acid, catechol, pyromellitic acid, quinic acid, sorbose Alcohol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, symmetrical trimellitic acid, tyrosine, xylitol, 1,5,9-trianthrane-dodecane-N, N', N" - ginseng (methylene phosphonic acid) (DOTRP), 1, 4, 7, 10 - four Cyclododecane-N,N',N",N'"-肆(methylenephosphonic acid)(DOTP), nitrogen-based ginseng (methylene)triphosphonic acid, diamethylenetriamine-5 (methylene Phosphonic acid) (DETAP), amine tris (methylene phosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), bis(hexamethylene)triaminephosphonic acid, 1 , 4,7-trioxocyclodecane-N,N',N"-gin (methylene phosphonic acid) (NOTP), dimercaprol (dimercaprol), 1,2-propanedithiol, 1,2 - Diterpene propane, its salts and derivatives, and combinations thereof. Preferably, the at least one intercalating agent comprises boric acid, HEDP, tartaric acid, cysteine, or a combination thereof. When used, the boric acid can advantageously assist in buffering.

The at least one corrosion inhibitor is added to the cleaning composition to reduce the corrosion rate of the metal (eg, copper, aluminum) and to improve cleaning performance. Corrosion inhibitors covered include, but are not limited to, n-dodecylphosphonic acid, 4-methylpyrazole, pyrazole, 2-aminothiazole, 2-amino-1,3,4-thiadiazole, 5-amino-1H-tetrazole, 1,2,4-triazole, 2-mercaptobenzimidazole (MBI), 4-methyl-2-phenylimidazole, imidazole, indole, pyrimidine, pyridyl Cytosine, guanidine , 1H-pyrazole-3-carboxylic acid, 1H-pyrazole-4-carboxylic acid, 3-amino-5-hydroxy-1H-pyrazole, 3-amino-5-methyl-1H-pyrazole, 3-amino-5-t-butyl-1H-pyrazole, 2-amino-methylthiazole, 2-mercaptothiazole, 2,5-dimercapto-1,3,4-thiadiazole, 2- Mercapto-5-methyl-1,3,4-thiadiazole, 2-aminothiazole-5-carbonitrile, 2-aminothiazole-5-carboxaldehyde, 2-aminothiazole-4-carboxylic acid ethyl ester , its derivatives, and combinations thereof. Alternatively, or in addition thereto, the corrosion inhibitor may comprise at least one terpenoid selected from the group consisting of riboside guanidines such as N-ribosyl guanidine, adenosine, guanosine, 2-aminopurine nucleus Glycosides, 2-methoxyadenosines, and methylated or deoxygenated derivatives thereof, such as N-methyladenosine (C ₁₁ H ₁₅ N ₅ O ₄ ), N,N-dimethyladenosine ( C ₁₂ H ₁₇ N ₅ O ₄ ), trimethylated adenosine (C ₁₃ H ₁₉ N ₅ O ₄ ), trimethyl N-methyladenosine (C ₁₄ H ₂₁ N ₅ O ₄ ), C-4 '-methyladenosine, and 3-deoxyadenosine; degradation products of adenosine and adenosine derivatives, including, but not limited to, adenine (C ₅ H ₅ N ₅ ), methylated adenine (eg , N-methyl-7H-indol-6-amine, C ₆ H ₇ N ₅ ), dimethylated adenine (for example, N,N-dimethyl-7H-purin-6-amine, C ₇ H ₉ N ₅ ), N4, N4-dimethylpyrimidine-4,5,6-triamine (C ₆ H ₁₁ N ₅ ), 4,5,6-triaminopyrimidine, allantoin (C ₄ H ₆ N ₄ O ₃ ), hydroxylated COOC dimer ((C ₅ H ₄ N ₅ O ₂ ) ₂ ), CC bridged dimer ((C ₅ H ₄ N ₅ ) ₂ or (C ₅ H ₄ N ₅ O) _2), ribose _{(C 5 H 10 O 5)} , methyl ribose (e.g., 5- (methoxymethyl) tetrahydro _{Pyran-2,3,4-triol, C 6 H 12 O 5)} , tetramethyl ribose (e.g., 2,3,4-trimethoxy-5- (methoxymethyl) tetrahydrofuran, C ₉ H ₁₈ O ₅ ), and other ribose derivatives such as methylated hydrolyzed diribose compounds; quinone-saccharide complexes including, but not limited to, xylose, glucose, etc.; other quinone compounds such as quinone, guanine, hypoxanthine, Astragalus, theobromine, caffeine, uric acid, and isoguanine, and their methylated or deoxy derivatives; triaminopyrimidines and other substituted pyrimidines such as amino substituted pyrimidines; dimers of any compound , a trimer or polymer, a reaction or degradation product thereof, or a derivative thereof; and combinations thereof.

Illustrative surfactants for use in the compositions described herein include, but are not limited to, amphoteric salts, cationic surfactants, anionic surfactants, fluoroalkyl surfactants, nonionic surfactants, And combinations thereof, including, but not limited to, SURFONYL® 104, TRITON® CF-21, ZONYL® UR, ZONYL® FSO-100, ZONYL® FSN-100, 3M Fluorad fluorosurfactant (ie FC-4430 and FC- 4432), dioctylsulfosuccinate, 2,3-dimercapto-1-propanesulfonate, dodecylbenzenesulfonic acid, polyethylene glycol, polypropylene glycol, polyethylene glycol or polypropylene glycol ether , a carboxylate, R ₁ benzene sulfonic acid or a salt thereof (wherein R ₁ is a linear or branched C ₈ -C ₁₈ alkyl group), an amphiphilic fluoropolymer, polyethylene glycol, polypropylene glycol, polyethylene Alcohol or polypropylene glycol ether, carboxylate, dodecylbenzenesulfonic acid, polyacrylate polymer, diphenyl phenyl polyoxyethylene, polyfluorene oxide or modified polyoxyl oxypolymer, acetylenic diol Or a modified acetylenic diol, an alkylammonium or a modified alkylammonium salt, and a combination comprising at least one of the foregoing surfactants, sodium lauryl sulfate , zwitterionic surfactant, aerosol-OT (AOT) and its fluorinated analogs, alkylammonium, perfluoropolyether surfactant, 2-sulfosuccinate, phosphate-based surfactant, Sulfur-based surfactant, TRITON® X-100, Pluronic F0127, and acetamidine acetate-based polymers.

The pH of the cleaning composition herein is greater than 7, preferably in the range of from about 8 to about 14, more preferably in the range of from about 8.5 to about 11.5.

It should be understood that the cleaning compositions described herein may further comprise residues and/or contaminants. Residues and contaminants can be dissolved in the cleaning composition. Or, disabled Residues and contaminants can be suspended in the cleaning composition. The residue preferably includes post-CMP residue, post-etch residue, post-ash residue, contaminants, or a combination thereof.

Regardless of the specific example of the invention, if the at least one non-amine pH adjuster/buffer comprises strontium ions and the composition further comprises at least one phosphonate ion, water, and at least one surfactant, the composition must be further Included is at least one non-phosphonate ion interlinking agent, at least one non-phosphonate corrosion inhibitor, at least one non-aqueous solvent mixture, or any combination thereof. Alternatively, if the at least one non-amine pH adjusting agent/buffering agent comprises cerium ions and the composition further comprises at least one phosphonate ion, water, and at least one surfactant, the composition must further comprise introducing a nitrogen atom to A component of a formulation wherein the component that introduces a nitrogen atom into the formulation comprises a nitrogenous acid, a nitrogenous base, or any other component or compound that will introduce a nitrogen atom into the formulation. Alternatively, the pH of the solution is greater than 7.

Preferably, the cleaning composition is formulated in a concentrated form and diluted with a diluent (e.g., at least one solvent mixture) at the time of use or prior to use. The concentrated cleaning composition can be formulated as follows, wherein all percentages are by weight based on the total weight of the formulation:

When present, the lower limit of the complexing agent, corrosion inhibitor and surfactant in the concentrate is about 0.01%.

The cleaning composition is easily formulated by simply adding the respective components and mixing them to a uniform state. In addition, the cleaning composition can be easily formulated to A single package formulation or multiple formulations mixed prior to or at the point of use, for example, individual portions of multiple formulations may be mixed at the tool or in a reservoir upstream of the tool. The concentration of the individual ingredients can vary widely within a particular multiple of the composition, i.e., more dilute or more concentrated, and any combination of ingredients that are illustrative of the compositions herein can be varied and alternatively include those consistent with the disclosure herein. , consists of, or consists essentially of, it.

In one embodiment, a concentrated cleaning composition that can be used as a cleaning solution by dilution is provided. The concentrated cleaning composition or "concentrate" advantageously allows the user (eg, a CMP process engineer) to dilute the concentrate to the desired concentration and pH at the point of use. The dilution of the concentrated cleaning composition can range from about 1:1 to about 2500:1, preferably from about 5:1 to about 200:1, and most preferably from about 10:1 to about 50:1, wherein the cleaning composition Dilute with at least one solvent mixture (eg, deionized water) before the tool or tool.

The cleaning composition can be used for applications including, but not limited to, residue removal after etching, residue removal surface preparation after ashing, post-plating cleaning, and residue removal after CMP. In addition, the cleaning compositions can be used to clean and protect other metal (eg, copper-containing) products including, but not limited to, decorative metals, wire bonds, printed circuit boards, and other electronic packages that use metals or metal alloys.

Thus, another aspect relates to a kit comprising one or more components stored in one or more containers suitable for forming the cleaning compositions described herein. The kit can include at least one non-amine pH adjuster/buffer, at least one solvent mixture, or at least one non-amine pH adjuster/buffer, in one or more containers in combination with at least one solvent mixture (eg, water) at a factory or point of use. At least one miscible agent, at least one surfactant, as desired, and optionally at least one corrosion inhibitor are required. The kit of containers must be suitable for storing and transporting such cleaning compositions, for example, NOWPak® containers (Advanced Technology Materials, Inc., Danbury, Conn., USA). Set of containers is better Containing no or no amines and ammonium salts, such as quaternary ammonium bases; oxidizing agents; fluoride containing sources; abrasive materials; crosslinked organic polymer particles; In addition, the components of the cleaning composition should not cure to form a polymeric solid.

When applied to microelectronic fabrication operations, the cleaning composition can be effectively used to clean residues (eg, post-CMP residues) and/or contaminants from the surface of the microelectronic device. Cleaning the composition does not damage the low-k dielectric material or the metal interconnect on the surface of the corrosion device. The cleaning composition preferably removes at least 85%, more preferably at least 90%, even more preferably at least 95%, and most preferably at least 99% of the residue present on the device prior to removal of the residue.

In post-CMP residue and contaminant cleaning applications, the cleaning composition can be used with a wide variety of conventional cleaning tools such as ultrasonic megasonics and scrubbing, including, but not limited to, Verteq single wafer ultrasonic oscillating Goldfinger OnTrak System DDS (Double Side Scrubber), SEZ or other single wafer spray wash, Applied Materials Mirra-Mesa ^TM /Reflexion ^TM /Reflexion LK ^TM , and Megasonic Batch Wet Countertop System.

After the composition is used to remove the substance from the microelectronic device having the post-CMP residue, the post-etch residue, the post-ash residue, and/or the contaminant thereon, the diluted cleaning composition and the device are placed Contacting at a temperature in the range of from 20 ° C to about 90 ° C (preferably from about 20 ° C to about 50 ° C) for a period of from about 5 seconds to about 10 minutes (preferably from about 1 second to 20 minutes, preferably from about 15 seconds to about 5) minute). Such contact times and temperatures are illustrative, and in the broad practice of the method, any other suitable time effective to at least partially remove residues (eg, post-CMP residues) and/or contaminants from the device may be employed and Temperature conditions. "at least partially removed" and "substantially removed" are equivalent to removing at least 85%, more preferably at least 90%, and even more preferably at least 95% of the residue present on the device prior to removal of the residue, and The best is at least 99%.

After the desired cleaning action is achieved, the cleaning composition can be easily removed from its previously applied device, which may be desirable and effective in the intended end use of the compositions described herein. The rinsing solution preferably includes deionized water. Thereafter, a nitrogen or rotary drying cycle drying apparatus can be used.

Yet another aspect relates to improved microelectronic devices made according to the methods described herein, and products containing such microelectronic devices.

Another aspect relates to a recycled cleaning composition wherein the cleaning composition can be recycled until the amount of residue and/or contaminant loading reaches a maximum amount that the cleaning composition can accommodate. Familiar with the craftsman is easy to decide.

Still another aspect relates to a method of making an article comprising a microelectronic device, the method comprising: using a cleaning composition as described herein, contacting the microelectronic device with the cleaning composition for a time sufficient to have residual CMP therefrom The microelectronic device of the substance and contaminant removes the residue and contaminants and incorporates the microelectronic device into the article.

In another aspect, a method of removing such materials from a microelectronic device having residues and contaminants after CMP is described, the method comprising: grinding a microelectronic device using a CMP slurry; and including the microelectronic device Adequate time for at least one non-amine pH adjuster/buffer, at least one solvent mixture, optionally at least one complexing agent, optionally at least one surfactant, and optionally at least one corrosion inhibitor cleaning composition Removing the residue and contaminants after CMP from the microelectronic device to form a composition containing the residue after CMP, wherein the cleaning composition is substantially free or free of amines and ammonium salts, such as a quaternary ammonium base. Oxidant; fluoride source; abrasive material; cross-linking The organic polymer particles; and combinations thereof; and the continuous contact of the microelectronic device with the composition containing the post-CMP residue for a sufficient length of time to achieve substantial cleaning of the microelectronic device.

Another aspect relates to a manufactured article comprising a cleaning composition, a microelectronic device wafer, and a substance selected from the group consisting of residues, contaminants, and combinations thereof, wherein the cleaning composition comprises at least one non-amine pH a conditioner/buffer, at least one solvent mixture, optionally at least one complexing agent, optionally at least one surfactant, and optionally at least one corrosion inhibitor, wherein the cleaning composition is substantially free or free of Amines and ammonium-containing salts, such as quaternary ammonium bases; oxidizing agents; fluoride-containing sources; abrasive materials; cross-linked organic polymer particles; and combinations thereof, and residues including post-CMP residues, post-etch residues, and ashing At least one of the remaining residues.

The present invention has been described with reference to the specific embodiments and features of the present invention, and is not intended to limit the scope of the invention. Modifications and other specific examples. Accordingly, the present invention is to be construed as being limited by the appended claims

Claims (34)

A cleaning composition comprising at least one non-amine pH adjusting agent/buffering agent and at least one solvent mixture. The cleaning composition of claim 1, wherein the at least one non-amine pH adjuster/buffer comprises a hydrazine having the formula R ₁ R ₂ R ₃ R ₄ POH, wherein R ₁ , R ₂ , R ₃ And R ₄ are the same or different from each other and are hydrogen, C ₁ -C ₆ alkyl, substituted C ₆ -C ₁₀ aryl, and unsubstituted C ₆ -C ₁₀ aryl. The cleaning composition of claim 1, wherein the at least one non-amine pH adjuster/buffer comprises a substance selected from the group consisting of tetrabutylphosphonium hydroxide (TBPH), tetramethyl hydroxide Base, tetraethyl hydrazine hydroxide, tetrapropyl hydrazine hydroxide, benzyl triphenyl hydrazine hydroxide, methyl triphenyl hydrazine hydroxide, ethyl triphenyl hydrazine hydroxide, N-propyl triphenyl hydrazine hydroxide And hydrazine hydroxide (hydroxymethyl) hydrazine, and combinations thereof, preferably tetrabutylphosphonium hydroxide. A cleaning composition according to claim 2 or 3, which further comprises potassium hydroxide, barium hydroxide, or barium hydroxide. The cleaning composition according to any one of claims 1 to 3, wherein the at least one solvent mixture comprises a substance selected from the group consisting of water, ethylene glycol, propylene glycol, neopentyl glycol, glycerin , diethylene glycol, dipropylene glycol, 1,4-butanediol, 2,3-butanediol, 1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol, tetra Formamidine (cyclobutane), dimethylhydrazine, diethyl hydrazine, bis(2-hydroxyethyl) hydrazine, methylcyclobutyl hydrazine, ethylcyclobutyl hydrazine, 1,2-hydroxyethyl pyrrolidone, and A combination thereof is preferably water and/or cyclobutyl hydrazine. The cleaning composition of any one of claims 1 to 3, further comprising at least one of at least one of a binder, at least one surfactant, and at least one corrosion inhibitor. The cleaning composition of claim 6, comprising the at least one complexing agent, wherein the at least one complexing agent comprises a substance selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), 1,2- Cyclohexanediamine-N,N,N',N'-tetraacetic acid (CDTA), 4-(2-hydroxyethyl) Porphyrin (HEM), N-amine ethylpipe (N-AEP), glycine, ascorbic acid, imine diacetic acid (IDA), 2-(hydroxyethyl)imine diacetic acid (HIDA), nitrogen triacetic acid, alanine, arginine, aspartate Aminic acid, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, guanidine Aminic acid, serine, threonine, tryptophan, tyrosine, valine, gallic acid, boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid, betaine, dimethylglyoxime, formic acid , fumaric acid, gluconic acid, glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalic acid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malic acid, Malonic acid, phenylglycolic acid, 2,4-pentanedione, phenylacetic acid, citric acid, valine acid, propionic acid, catechol, pyromellitic acid, quinic acid, sorbose Alcohol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, symmetrical trimellitic acid, tyrosine, xylitol, 1,5,9-trianthrane-dodecane-N, N', N" - ginseng (methylene phosphonic acid) (DOTRP), 1, 4, 7, 10 - four Cyclododecane-N,N',N",N'"-肆(methylenephosphonic acid)(DOTP), nitrogen-based ginseng (methylene)triphosphonic acid, diamethylenetriamine-5 (methylene Phosphonic acid) (DETAP), amine tris (methylene phosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), bis(hexamethylene)triaminephosphonic acid, 1 , 4,7-trioxocyclodecane-N,N',N"-gin (methylene phosphonic acid) (NOTP), dimercaprol (dimercaprol), 1,2-propanedithiol, 1,2 - Dioxane, its salts and derivatives, and combinations thereof, preferably HEDP, tartaric acid, cysteine, or any combination thereof. A cleaning composition according to claim 6 which comprises the at least one corrosion inhibitor, wherein the at least one corrosion inhibitor comprises a substance selected from the group consisting of n-dodecylphosphonic acid, 4-methyl Pyrazole, pyrazole, 2-aminothiazole, 2-amino-1,3,4-thiadiazole, 5-amino-1H-tetrazole, 1,2,4-triazole, 2-mercapto Benzimidazole (MBI), 4-methyl-2-phenylimidazole, imidazole, indole, pyrimidine, pyridyl Cytosine, guanidine , 1H-pyrazole-3-carboxylic acid, 1H-pyrazole-4-carboxylic acid, 3-amino-5-hydroxy-1H-pyrazole, 3-amino-5-methyl-1H-pyrazole, 3-amino-5-t-butyl-1H-pyrazole, 2-amino-methylthiazole, 2-mercaptothiazole, 2,5-dimercapto-1,3,4-thiadiazole, 2- Mercapto-5-methyl-1,3,4-thiadiazole, 2-aminothiazole-5-carbonitrile, 2-aminothiazole-5-carboxaldehyde, 2-aminothiazole-4-carboxylic acid ethyl ester , N-ribosyl guanidine, adenosine, guanosine, 2-aminopurine riboside, 2-methoxyadenosine, N-methyladenosine (C ₁₁ H ₁₅ N ₅ O ₄ ), N, N -Dimethyladenosine (C ₁₂ H ₁₇ N ₅ O ₄ ), trimethylated adenosine (C ₁₃ H ₁₉ N ₅ O ₄ ), trimethyl N-methyladenosine (C ₁₄ H ₂₁ N ₅ O ₄ ), C-4 '-methyladenosine, 3-deoxyadenosine; adenine (C ₅ H ₅ N ₅ ), methylated adenine (for example, N-methyl-7H-嘌呤-6 -amine, C ₆ H ₇ N ₅ ), dimethylated adenine, N4, N4-dimethylpyrimidine-4,5,6-triamine (C ₆ H ₁₁ N ₅ ), 4,5,6- Triaminopyrimidine, allantoin (C ₄ H ₆ N ₄ O ₃ ), hydroxylated COOC dimer ((C ₅ H ₄ N ₅ O ₂ ) ₂ ), CC bridged dimer, ribose (C ₅ H ₁₀ O ₅ ), methylated ribose, tetramethylated ribose, xylose, glucose , cockroaches, guanine, hypoxanthine, scutellaria, theobromine, caffeine, uric acid, isoguanine, triaminopyrimidine, and combinations thereof. A cleaning composition according to claim 6 which comprises at least one surfactant selected from the group consisting of SURFONYL® 104, TRITON® CF-21, TRITON® CF-10, TRITON® X-100 , ZONYL® UR, ZONYL® FSO-100, ZONYL® FSN-100, 3M Fluorad Fluorosurfactant, Dioctylsulfosuccinate, 2,3-Dimercapto-1-propanesulfonate, Polyethylene Alcohol, polypropylene glycol, polyethylene glycol ether, polypropylene glycol ether, carboxylate, alkylbenzenesulfonic acid, amphiphilic fluoropolymer, C ₈ -C ₁₈ alkyl phosphate ether, carboxylate, dodecane Benzobenzenesulfonic acid, alkyl arylphosphonic acid, polyacrylate polymer, diphenyl phenyl polyoxyethylene, polyethoxylated sorbitan, sorbitan, polyoxyl polymer, modified Polyoxynized polymer, acetylenic diol, modified acetylenic diol, alkylammonium salt, modified alkyl ammonium salt, sodium lauryl sulfate, perfluoropolyether surfactant, 2-sulfosuccinate, phosphate-based surfactant, sulfur-based surfactant, acetamidine acetate-based polymer, TRITON X-100, Pluronic F012 7, and its combination. The cleaning composition according to any one of claims 1 to 3, wherein the cleaning composition is substantially free of an amine and an ammonium salt; an oxidizing agent; a fluoride containing source; an abrasive material; and a crosslinked organic polymer particle. ; and its combination. The cleaning composition of any one of claims 1 to 3, wherein the cleaning composition will not solidify to form a polymeric solid. The cleaning composition according to any one of claims 1 to 3, further comprising a residue and a contaminant, wherein the residue comprises a residue after chemical mechanical polishing (CMP), a residue after etching, and after ashing Residue, or a combination thereof. The cleaning composition according to any one of claims 1 to 3, wherein the pH system is greater than 7. The cleaning composition according to any one of claims 1 to 3, wherein the at least one non-amine pH adjuster/buffering agent comprises cerium ions and the composition further comprises at least one phosphonate ion, water, and At least one surfactant, the composition must further comprise at least one non-phosphonate ion interlinker, at least one non-phosphonate corrosion inhibitor, at least one non-aqueous solvent mixture, or any combination thereof. The cleaning composition according to any one of claims 1 to 3, wherein the at least one non-amine pH adjuster/buffering agent comprises cerium ions and the composition further comprises at least one phosphonate ion, water, and At least one surfactant, then the group The composition must further comprise a component that introduces a nitrogen atom into the formulation, wherein the component that introduces the nitrogen atom into the formulation comprises a nitrogen-containing acid, a nitrogen-containing base, or any other group that introduces a nitrogen atom into the composition. Fraction or compound. The cleaning composition of any one of claims 1 to 3, wherein the composition is diluted in a range of from about 5:1 to about 200:1. The cleaning composition of claim 16, wherein the diluent comprises water. A method of removing such residues and contaminants from a microelectronic device having residues and contaminants thereon, the method comprising contacting the microelectronic device with a cleaning composition for a time sufficient to at least partially from the microelectronic device The residue and contaminants are removed, wherein the cleaning composition comprises at least one non-amine pH adjuster/buffer and at least one solvent mixture. The method of claim 18, wherein the at least one non-amine pH adjuster/buffer comprises a hydrazine having the formula R ₁ R ₂ R ₃ R ₄ POH, wherein R ₁ , R ₂ , R ₃ and R ₄ is the same or different from each other and is hydrogen, C ₁ -C ₆ alkyl, substituted C ₆ -C ₁₀ aryl, and unsubstituted C ₆ -C ₁₀ aryl. The method of claim 18, wherein the at least one non-amine pH adjuster/buffer comprises a substance selected from the group consisting of tetrabutylphosphonium hydroxide (TBPH), tetramethylhydrazine hydroxide , tetraethyl hydrazine hydroxide, tetrapropyl hydrazine hydroxide, benzyl triphenyl hydrazine hydroxide, methyl triphenyl hydrazine hydroxide, ethyl triphenyl hydrazine hydroxide, N-propyl triphenyl hydrazine hydroxide, hydrogen Cerium oxide (hydroxymethyl) hydrazine, and combinations thereof, are preferably tetrabutylphosphonium hydroxide. The method of claim 19 or 20, further comprising potassium hydroxide, barium hydroxide, or barium hydroxide. The method of any one of claims 18 to 20, wherein the at least one solvent mixture comprises a substance selected from the group consisting of water, ethylene glycol, propylene glycol, neopentyl glycol, glycerin, Glycol, dipropylene glycol, 1,4-butanediol, 2,3-butanediol, 1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol, tetramethylene guanidine (cyclobutane), dimethylhydrazine, diethyl hydrazine, bis(2-hydroxyethyl) hydrazine, methylcyclobutyl hydrazine, ethylcyclobutyl hydrazine, 1,2-hydroxyethyl pyrrolidone, and combinations thereof Preferably, it is water and/or cyclobutyl hydrazine. The method of any one of claims 18 to 20, wherein the composition further comprises at least one of at least one of a binder, at least one surfactant, and at least one corrosion inhibitor. The method of claim 23, wherein the composition comprises the at least one complexing agent, wherein the at least one complexing agent comprises a substance selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), 1, 2-cyclohexanediamine-N,N,N',N'-tetraacetic acid (CDTA), 4-(2-hydroxyethyl) Porphyrin (HEM), N-amine ethylpipe (N-AEP), glycine, ascorbic acid, imine diacetic acid (IDA), 2-(hydroxyethyl)imine diacetic acid (HIDA), nitrogen triacetic acid, alanine, arginine, aspartate Aminic acid, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, guanidine Aminic acid, serine, threonine, tryptophan, tyrosine, valine, gallic acid, boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid, betaine, dimethylglyoxime, formic acid , fumaric acid, gluconic acid, glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalic acid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malic acid, Malonic acid, phenylglycolic acid, 2,4-pentanedione, phenylacetic acid, citric acid, valine acid, propionic acid, catechol, pyromellitic acid, cinchonaic acid, sorbitol, succinic acid , tartaric acid, terephthalic acid, trimellitic acid, symmetrical trimellitic acid, tyrosine, xylitol, 1,5,9-trianthrane-dodecane-N, N', N"-parameter (Asia Methylphosphonic acid) (DOTRP), 1,4,7,10-tetracyclic ring twelve -N,N',N",N'"-肆 (methylene phosphonic acid) (DOTP), nitrogen-based (methylene) triphosphonic acid, diethylenetriamine penta (methylene phosphonic acid) (DETAP), Aminotris (methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), bis(hexamethylene)triaminephosphonic acid, 1,4,7 - trioxocyclodecane-N,N',N"-gin (methylene phosphonic acid) (NOTP), dithioglycerol, 1,2-propanedithiol, 1,2-dioxane, its salt And derivatives, and combinations thereof, preferably HEDP, tartaric acid, cysteine, or any combination thereof. The method of claim 23, wherein the composition comprises the at least one corrosion inhibitor, wherein the at least one corrosion inhibitor comprises a substance selected from the group consisting of n-dodecylphosphonic acid, 4 -methylpyrazole, pyrazole, 2-aminothiazole, 2-amino-1,3,4-thiadiazole, 5-amino-1H-tetrazole, 1,2,4-triazole, 2 - mercaptobenzimidazole (MBI), 4-methyl-2-phenylimidazole, imidazole, indole, pyrimidine, pyridyl Cytosine, guanidine , 1H-pyrazole-3-carboxylic acid, 1H-pyrazole-4-carboxylic acid, 3-amino-5-hydroxy-1H-pyrazole, 3-amino-5-methyl-1H-pyrazole, 3-amino-5-t-butyl-1H-pyrazole, 2-amino-methylthiazole, 2-mercaptothiazole, 2,5-dimercapto-1,3,4-thiadiazole, 2- Mercapto-5-methyl-1,3,4-thiadiazole, 2-aminothiazole-5-carbonitrile, 2-aminothiazole-5-carboxaldehyde, 2-aminothiazole-4-carboxylic acid ethyl ester , N-ribosyl guanidine, adenosine, guanosine, 2-aminopurine riboside, 2-methoxyadenosine, N-methyladenosine (C ₁₁ H ₁₅ N ₅ O ₄ ), N, N -Dimethyladenosine (C ₁₂ H ₁₇ N ₅ O ₄ ), trimethylated adenosine (C ₁₃ H ₁₉ N ₅ O ₄ ), trimethyl N-methyladenosine (C ₁₄ H ₂₁ N ₅ O ₄ ), C-4 '-methyladenosine, 3-deoxyadenosine; adenine (C ₅ H ₅ N ₅ ), methylated adenine (for example, N-methyl-7H-嘌呤-6 -amine, C ₆ H ₇ N ₅ ), dimethylated adenine, N4, N4-dimethylpyrimidine-4,5,6-triamine (C ₆ H ₁₁ N ₅ ), 4,5,6- Triaminopyrimidine, allantoin (C ₄ H ₆ N ₄ O ₃ ), hydroxylated COOC dimer ((C ₅ H ₄ N ₅ O ₂ ) ₂ ), CC bridged dimer, ribose (C ₅ H ₁₀ O ₅ ), methylated ribose, tetramethylated ribose, xylose, glucose , cockroaches, guanine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, isoguanine, triaminopyrimidine, and combinations thereof. The method of claim 23, wherein the composition comprises the at least one surfactant selected from the group consisting of SURFONYL® 104, TRITON® CF-21, TRITON® CF-10, TRITON® X -100, ZONYL® UR, ZONYL® FSO-100, ZONYL® FSN-100, 3M Fluorad fluorosurfactant, dioctyl sulfosuccinate, 2,3-dimercapto-1-propane sulfonate, poly Ethylene glycol, polypropylene glycol, polyethylene glycol ether, polypropylene glycol ether, carboxylate, alkylbenzenesulfonic acid, amphiphilic fluoropolymer, C ₈ -C ₁₈ alkyl phosphate ether, carboxylate, ten Dialkyl benzene sulfonic acid, alkyl aryl phosphonic acid, polyacrylate polymer, diphenyl phenyl polyoxyethylene, polyethoxylated sorbitan, sorbitan, polyoxyl polymer, Modified polyoxyl polymer, acetylene diol, modified acetylenic diol, alkyl ammonium salt, modified alkyl ammonium salt, sodium lauryl sulfate, perfluoropolyether interface activity Agent, 2-sulfosuccinate salt, phosphate-based surfactant, sulfur-based surfactant, acetamidine acetate-based polymer, TRITON X-100, Plur Onic F0127, and combinations thereof. The method of any one of claims 18 to 20, wherein the cleaning composition is substantially free of amines and ammonium salts; an oxidizing agent; a fluoride containing source; an abrasive material; crosslinked organic polymer particles; Its combination. The method of any one of claims 18 to 20, wherein the cleaning composition will not cure to form a polymeric solid. The method of any one of claims 18 to 20, wherein the composition further comprises a residue and a contaminant, wherein the residue comprises a residue after CMP, a residue after etching, a residue after ashing, Or a combination thereof. The method of any one of claims 18 to 20, wherein the pH of the composition is greater than 7. The method of any one of claims 18 to 20, wherein the at least one non-amine pH adjuster/buffer comprises strontium ions and the composition further comprises at least one phosphonate ion, water, and at least one The surfactant, the composition must further comprise at least one non-phosphonate ion intercalator, at least one non-phosphonate corrosion inhibitor, at least one non-aqueous solvent mixture, or any combination thereof. The method of any one of claims 18 to 20, wherein the at least one non-amine pH adjuster/buffer comprises strontium ions and the composition further comprises at least one phosphonate ion, water, and at least one The surfactant, the composition must further comprise a component that introduces a nitrogen atom into the formulation, wherein the component that introduces the nitrogen atom into the formulation comprises a nitrogenous acid, a nitrogenous base or any other that introduces a nitrogen atom To a component or compound in the composition. The method of any one of claims 18 to 20, wherein the composition is diluted in the range of from about 5:1 to about 200:1. The method of claim 33, wherein the diluent comprises water.