TW201539810A - Thermoelectric thin film structure - Google Patents

Abstract

A thermoelectric thin film structure includes a thermoelectric transfer material region, which includes a thermoelectric transfer material, and a metal diffusion material region including a metal diffused into the thermoelectric transfer material region at one side of the thermoelectric transfer material. The thermoelectric thin film structure has a transverse Seebeck coefficient.

Description

Thermoelectric film structure

This invention relates to a thermoelectric film structure, and more particularly to a thermoelectric film structure having a region of metal diffusion material.

The thermoelectric material is a material that can convert thermal energy and electrical energy to each other, and has a Seebeck effect and a Peltier effect. The Sibeck effect is converted into a potential difference by the temperature difference of the thermoelectric material, and can be applied to thermoelectric generation; and the Peltier effect is caused by the potential difference of the thermoelectric material, and can be applied to thermoelectric refrigeration.

With the evolution of thermoelectric technology, the research goal of thermoelectric materials has changed from three-dimensional block structure to one-dimensional film or nanowire structure. One-dimensional structures such as thermoelectric thin films have flexibility compared to three-dimensional bulk structures, which can reduce the use of materials and have a large contact area. However, because of the change in structure, the temperature difference or potential difference that can be applied or obtained on the thermoelectric film becomes small. Therefore, how to make a one-dimensional thermoelectric material can obtain a larger potential difference while maintaining the same temperature difference is the focus of current research and development.

Accordingly, the present invention provides a thermoelectric film structure having a region of a metal diffusion material having a Transverse Seebeck coefficient which enhances the thermoelectric effect of the thermoelectric material. It can be applied to thermoelectric conversion elements.

One aspect of the present invention is a thermoelectric thin film structure including a thermoelectric conversion material region including a thermoelectric conversion material and a metal diffusion material region, wherein the metal diffusion material region includes a metal diffusion distribution on the thermoelectric conversion material One side of the thermoelectric conversion material in the zone.

In one or more embodiments of the present invention, the thermoelectric conversion material comprises an N-type thermoelectric conversion material or a P-type thermoelectric conversion material.

In one or more embodiments of the present invention, the N-type thermoelectric conversion material is Bi ₂ Te ₃ or Bi ₂ Se _x Te _3-x material, and x is 0 to 3 between.

In one or more embodiments of the present invention, the N-type thermoelectric conversion material is Bi ₂ Se _0.5 Te _2.5 .

In one or more embodiments of the present invention, the P-type thermoelectric conversion material is a triterpene (Sb ₂ Te ₃ ) or bismuth (Bi _y Sb _2-y Te ₃ ) material, and y is between 0 Between 2 and 2.

In one or more embodiments of the present invention, the P-type thermoelectric conversion material is Bi _0.5 Sb _1.5 Te ₃ .

In one or more embodiments of the present invention, the thermoelectric conversion material comprises lead telluride (PbTe), zinc telluride (ZnSb), germanium telluride (SiGe), silver tellurium (AgSbTe ₂ ) material, germanium telluride ( GeTe) or a combination thereof.

In one or more embodiments of the present invention, the metal is gold, copper, Silver, platinum or a combination thereof.

In one or more embodiments of the present invention, the metal diffusion is distributed on the lower side or the left and right sides of the thermoelectric conversion material in the thermoelectric conversion material region, and the diffusion distribution of the metal is a uniform distribution or a concentration gradient distribution.

In one or more embodiments of the present invention, the concentration gradient distribution described above is decreased from the outer side of the metal diffusion material region to the center side of the thermoelectric conversion material region.

In one or more embodiments of the present invention, the thermoelectric thin film structure further includes a substrate, the thermoelectric conversion material region is located at the upper or lower end substrate, and the metal diffusion material region is located on the lower side or the left and right sides of the thermoelectric conversion material.

In one or more embodiments of the present invention, the substrate is a hard substrate or a soft substrate.

In one or more embodiments of the invention, the material of the hard substrate comprises germanium.

In one or more embodiments of the invention, the material of the soft substrate comprises a polyimide.

In one or more embodiments of the present invention, the thermoelectric thin film structure described above is applied to a thin film type thermoelectric generator or a thin film type thermoelectrically cooled wafer.

The above description is only for illustrating the problems to be solved by the present invention, the technical means for solving the problems, the effects thereof, and the like, and the details of the present invention will be described in detail in the following embodiments and related drawings.

100‧‧‧ Thermoelectric conversion material area

110‧‧‧Metal diffusion material zone

200, 310‧‧‧ substrate

300‧‧‧Thermal conversion unit

320A, 320B‧‧‧N type thermoelectric film structure

322A, 322B‧‧‧N type thermoelectric conversion material area

324A, 324B‧‧‧First metal diffusion material zone

330A, 330B‧‧‧P type thermoelectric film structure

332A, 332B‧‧‧P type thermoelectric conversion material area

334A, 334B‧‧‧Second metal diffusion material zone

340‧‧‧Electrical conductor

410‧‧‧Package

420, 530‧‧ ‧ heat sink

430, 540‧‧‧ take hot plate

440, 550‧‧ ‧ cloth film

450, 510, 520‧‧‧ wires

The above and other objects, features, advantages and embodiments of the present invention are made. The detailed description of the drawings is as follows: FIG. 1 is a schematic cross-sectional view showing a structure of a thermoelectric film according to an embodiment of the present invention; and FIG. 2 is a view showing a thermoelectric film structure according to an embodiment of the present invention. FIG. 3 is a top view of a thermoelectric conversion element according to an embodiment of the present invention; FIG. 4 is a cross-sectional view of a thermoelectric conversion element according to an embodiment of the present invention; and FIG. An exploded view of a thermoelectric conversion element according to an embodiment of the invention.

The embodiments of the present invention are disclosed in the following drawings, and for the purpose of clarity However, it should be understood by those skilled in the art that the details of the invention are not essential to the details of the invention. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

The three-dimensional thermoelectric structure mainly uses the Schbeck effect to generate a potential difference in the same direction as the temperature difference direction, and a plurality of power generation structures may be connected in series to increase the efficiency. However, a one-dimensional thermoelectric structure such as a thermoelectric film, when the temperature difference is generated in the direction of the lower surface of the thermoelectric film, because the thickness of the film, that is, the distance between the upper and lower surfaces is small, the electricity generated in the same direction as the temperature difference direction is generated. The difference is also small. Therefore, in some embodiments of the present invention, a thermoelectric thin film structure is provided, which can generate a potential difference perpendicular to the temperature difference direction, so that the thermoelectric thin film structure has a lateral Sibeck coefficient and thereby improves the thermoelectric figure of merit, thereby overcoming the one-dimensional structure. The application of thermoelectric materials is limited.

Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing the structure of a thermoelectric film according to some embodiments of the present invention. The thermoelectric thin film structure includes a thermoelectric conversion material region 100 and a metal diffusion material region 110. The metal diffusion material region 110 is located on one side of the thermoelectric conversion material region 100. The thermoelectric conversion material region includes a thermoelectric conversion material for energy conversion between heat and electricity. In some embodiments of the present invention, the thermoelectric conversion material includes an N-type thermoelectric conversion material and a P-type thermoelectric conversion material or an N-type/P-type combined thermoelectric conversion material. The N-type thermoelectric conversion material includes Bi ₂ Te ₃ or Bi ₂ Se _x Te _3-x materials, and x is between 0 and 3. In some embodiments of the invention, the N-type thermoelectric conversion material is Bi ₂ Se _0.5 Te _2.5 . The P-type thermoelectric conversion material includes a material of Sb ₂ Te ₃ or Bi _y Sb _2-y Te ₃ , and y is between 0 and 2. In some embodiments of the invention, the P-type thermoelectric conversion material is Bi _0.5 Sb _1.5 Te ₃ . In some embodiments of the present invention, the thermoelectric conversion material includes lead telluride (PbTe), zinc telluride (ZnSb), germanium telluride (SiGe), silver germanium (AgSbTe ₂ ) material, germanium telluride (GeTe) or Its combination.

Please continue to see Figure 1. The metal diffusion material region 110 includes a metal diffusion side of one side of the thermoelectric conversion material in the thermoelectric conversion material region 100. In some embodiments of the present invention, the metal diffusion is distributed on the lower side or the left and right sides of the thermoelectric conversion material in the thermoelectric conversion material region. In some embodiments of the invention, the metal is gold, silver, copper, platinum or a combination thereof. In some embodiments of the invention, the metal is distributed or uniformly distributed in the metal diffusion material region 110 in a concentration gradient. In some embodiments of the present invention, a portion of the metal thin film is vapor-deposited on the upper surface of one side of the thermoelectric conversion material region 100, and then rapid annealing is performed to diffuse the vapor-deposited metal film into the thermoelectric conversion material to form a metal thin film. Metal diffusion material region 110. At this time, the metal has a concentration gradient distribution in the metal diffusion material region which is reduced from the side of the metal diffusion material region toward the center side of the thermoelectric conversion material region. In some embodiments of the present invention, the metal thin film may be deposited by sputtering, electroplating or electroless plating.

In some embodiments of the present invention, the thermoelectric film structure having the metal diffusion material region has a lateral Sbeck coefficient, that is, when the lower surface of the thermoelectric film structure has a temperature difference, the thermoelectric film structure can be A potential difference is measured on both sides of the vertical direction of the temperature difference. At this time, the position of the measured potential difference needs to be on one side in the thermoelectric conversion material region, and the other side is located in the metal diffusion material region. Compared with the thermoelectric film without the metal diffusion material region, the thermoelectric film having no metal diffusion material region can only produce a potential difference between the upper and lower surfaces when there is a temperature difference between the upper and lower surfaces, and does not have a lateral Schel Beck coefficient, and cannot be used in the film and The potential difference is measured on both sides of the vertical direction of the temperature difference. The thermoelectric film having a lateral Sibeck coefficient can greatly improve the electrical and thermoelectric merit of the thermoelectric film. In some embodiments of the present invention, an electric current may be applied to the thermoelectric film structure to form a temperature difference on the lower surface of the thermoelectric film structure. Therefore, the thermoelectric film structure can be applied to a thin film type thermoelectric generator or a thin film type thermoelectric cooling chip, and the volume of these devices can be reduced and the thermoelectric conversion efficiency can be improved.

Please refer to FIG. 2, which is a cross-sectional view showing the structure of a thermoelectric film according to some embodiments of the present invention. In some embodiments of the present invention, the thermoelectric film structure further includes a substrate 200, the thermoelectric conversion material region 100 is located at the upper end or the lower end of the substrate 200, and the metal diffusion material region 110 is located on the lower side or the left and right sides of the thermoelectric conversion material 100. The substrate 200 can be a soft substrate or a hard substrate. In some embodiments of the present invention, the material of the soft substrate may be an insulating high molecular polymer such as polyimide. The use of a flexible substrate allows the thermoelectric film structure to remain flexible and can be used in textiles. In some embodiments of the invention, the material of the hard substrate comprises germanium. In some embodiments of the invention, a plurality of thermoelectric thin film structures may be connected in series to increase the potential difference generated.

Referring to FIG. 3, FIG. 3 is a top view of a thermoelectric conversion element according to an embodiment of the present invention. The thermoelectric conversion element connects the above-described thermoelectric thin film structures in series to increase the potential difference generated. The thermoelectric conversion element is a thermoelectric conversion unit 300 in this embodiment. The thermoelectric conversion unit 300 has a substrate 310, a plurality of N-type thermoelectric thin film structures 320, a plurality of P-type thermoelectric thin film structures 330, and a plurality of electrical conductors 340. The N-type thermoelectric thin film structure and the P-type thermoelectric thin film structure are disposed on the substrate 310 and are staggered, and the N-type and P-type thermoelectric thin film structures 320 and 330 are connected in series by the electrical conductor 340. In some embodiments, the N-type thermoelectric film structure and the P-type thermoelectric film structure may also be disposed at the lower end of the substrate 310. The substrate 310 may be a soft substrate or a hard substrate. In some embodiments of the present invention, the material of the soft substrate may include a high molecular polymer such as polyimide, and the material of the hard substrate may include a ceramic material or a ceramic material, and an appropriate substrate material may be selected according to the purpose of use. The N-type thermoelectric film structure 320 (including 320A, 320B) includes an N-type thermoelectric conversion material region 322 having an upper surface and a lower surface, and a first metal diffusion material region 324 located in the N-type thermoelectric conversion material region. One side of the 322, wherein the N-type thermoelectric conversion material region 322 includes an N-type thermoelectric conversion material, and the first metal diffusion material region 324 includes a first metal diffusion distribution on one side of the N-type thermoelectric conversion material. The N-type thermoelectric conversion material is a Bi ₂ Te ₃ or Bi ₂ Se _x Te _3-x material, and x is between 0 and 3. In some embodiments of the invention, the N-type thermoelectric conversion material is Bi ₂ Se _0.5 Te _2.5 . The first metal is gold, copper, silver, and platinum or a combination thereof. In some embodiments of the invention, the first metal is silver. The first metal has a concentration gradient distribution or is uniformly distributed on the lower side or the left and right sides of the N-type thermoelectric conversion material. In some embodiments of the invention, the concentration of the first metal decreases from the outer side toward the center of the thermoelectric conversion material region 322 in the metal diffusion material region 324.

Referring to FIG. 3, the P-type thermoelectric film structure 330 (including 330A, 330B) includes a P-type thermoelectric conversion material region 332 having an upper surface and a lower surface, and a second metal diffusion material region 334 at P. One side of the type thermoelectric conversion material region 332. The P-type thermoelectric conversion material region 332 includes a P-type thermoelectric conversion material, and the second metal diffusion material region 334 includes a second metal diffusion distribution on one side of the P-type thermoelectric conversion materials, such as upper and lower sides or left and right sides. The P-type thermoelectric conversion material includes a material of Sb ₂ Te ₃ or Bi _y Sb _2-y Te ₃ , and y is between 0 and 2. In some embodiments of the invention, the P-type thermoelectric conversion material is Bi _0.5 Sb _1.5 Te ₃ . The second metal is gold, copper, silver, and platinum or a combination thereof. In some embodiments of the invention, the second metal is silver. The second metal has a concentration gradient distribution or is uniformly distributed in the P-type thermoelectric conversion material. In some embodiments of the invention, the concentration gradient of the second metal is decremented from the outer side toward the center of the thermoelectric conversion material region 332 in the metal diffusion material region 334. A plurality of electrical conductors 340 are formed on both ends of each of the N-type thermoelectric thin film structure 320 and the P-type thermoelectric thin film structure 330. The covered N-type thermoelectric thin film structure 320 and the P-type thermoelectric thin film structure 330 make all the thermoelectric thin films. The structures 320, 330 are electrically connected and connected in series with all of the thermoelectric thin film structures 320, 330. The material of the conductor 340 is metal, and may be a low-resistance metal or alloy, such as copper, iron, chromium, nickel, tin, silver, gold, etc., and may be appropriately selected depending on the application. The N-type thermoelectric film structure 320 and the P-type thermoelectric film structure 330 are arranged in a staggered manner. In some embodiments of the present invention, the arrangement order is an N-type thermoelectric film structure 320A, a P-type thermoelectric film structure 330A, an N-type thermoelectric film structure 320B, and a P-type thermoelectric film structure 330B. In the series mode, the order of connection of the metal diffusion material regions 324, 334 of the thermoelectric thin film structures 320, 330 with the thermoelectric conversion material regions 322, 332 is not limited. The metal diffusion material regions 324, 334 are on the same side, such as the thermoelectric film structures 320A, 330A, or the metal diffusion material regions 324, 334 are on different sides, such as the thermoelectric thin film structures 320B, 330B. The invention is not limited. When a temperature difference is generated on the lower surface of the thermoelectric thin film structures 320, 330, a potential difference is generated at both ends of the thermoelectric thin film structures 320, 330, and both ends are referred to as a metal diffusion material region side and a thermoelectric conversion material region side, and The largest potential difference is obtained in the first and last conductors 340 of the series. In some embodiments of the present invention, a current may be passed through the thermoelectric conversion unit 300 to form a temperature difference on the upper surface of the thermoelectric conversion unit 300. This thermoelectric conversion element can be applied to a thin film type thermoelectric generator or a thin film type thermoelectrically cooled wafer.

Referring to FIG. 4, FIG. 4 is a cross-sectional view showing a thermoelectric conversion element according to an embodiment of the present invention. In this embodiment, the thermoelectric conversion element includes a thermoelectric conversion unit 300, and further includes an encapsulant 410, a heat dissipation plate 420, and a heat extraction plate 430. For example, the thermoelectric conversion unit 300 has a substrate 310, a plurality of N-type, P-type thermoelectric thin film structures 320, 330 and a plurality of electrical conductors 340 are formed on the substrate 310, and the N-type and P-type thermoelectric thin film structures 320 and 330 are interlaced with each other. arrangement. Electrical conductors 340 are formed on portions of thermoelectric thin film structures 320, 330, and all of the thermoelectric thin film structures 320, 330 are electrically connected and connected in series. The encapsulant 410 fills the voids of the thermoelectric film structures 320, 330 to assist in fixing the thermoelectric film structure and facilitating the packaging process. The heat take-up plate 430 is placed over the thermoelectric film structures 320, 330. The heat taking plate 430 is an insulating and heat-conducting substrate, and the heat source can be placed on the heat taking plate 430 to allow heat to pass through the heat taking plate 430 to reach the upper surface of the thermoelectric film structures 320, 330, so that the upper surface of the thermoelectric film structures 320, 330 A temperature difference is generated to generate a potential difference across the thermoelectric thin film structures 320, 330. The heat taking plate 430 can be a hard substrate such as an aluminum nitride substrate or a soft substrate such as a polyimide substrate, and can be selected according to the use of the thermoelectric conversion element to select a suitable heat taking plate material. The material of the heat dissipation plate 420 is a heat conductive metal, such as copper foil or aluminum foil, and is disposed under the substrate 310 to accelerate heat dissipation of the thermoelectric film structures 320 and 330 to increase the temperature difference between the upper and lower surfaces of the thermoelectric film structures 320 and 330, thereby increasing The potential difference produced. In some embodiments of the invention, A cover film 440 is further disposed on the heat take-up plate 430. In some embodiments of the present invention, the two wires 450 are further electrically connected to the electrical conductor 340. In some embodiments of the present invention, the thermoelectric conversion element can be applied to a thin film type thermoelectric generator or a thin film type thermoelectrically cooled wafer. The heat source is placed on the film 440 or placed directly on the heat take-up plate 430, so that the upper surface of the thermoelectric film structures 320, 330 has a temperature difference and is dissipated by the heat sink 420. The thermoelectric thin film structure can be made to have a potential difference, and the generated electricity can be applied to the application of the mobile phone charging, the light emitting diode, and the like via the wire 450. In some embodiments of the present invention, an electric current may be applied to the wire 450 to create a temperature difference on the lower surface of the thermoelectric film structure for heating or cooling.

Referring to FIG. 5, FIG. 5 is an exploded view of a thermoelectric conversion element according to an embodiment of the present invention. The difference from the embodiment shown in FIG. 4 is that the thermoelectric conversion element includes a plurality of thermoelectric conversion units 300 that are vertically stacked and electrically connected to the plurality of thermoelectric conversion units 300 by wires 510 and 520. In some embodiments of the present invention, a heat dissipation plate 530 is disposed under the thermoelectric conversion unit 300, a heat extraction plate 540 is disposed above the thermoelectric conversion unit 300, and a film 550 is covered. Above the hot plate 540. The heat take-up plate 540 can be a hard substrate such as an aluminum nitride substrate or a soft substrate such as polyimide, which can be selected according to the use of the thermoelectric conversion element to select a suitable heat take-up plate material. The material of the heat dissipation plate 530 is a heat conductive metal such as copper foil or aluminum foil. In some embodiments of the present invention, the thermoelectric conversion element can drive the light-emitting two when the area is 36 square centimeters and the temperature difference between the hot plate and the heat sink is 10K. Polar body or small fan.

In some embodiments of the present invention, the application of the thermoelectric conversion element includes a flexible thermoelectric charging cloth, which can bond the thermoelectric film structure to any product and substrate, and is easy to carry or store; a portable thermoelectric mobile energy source, The utility model can utilize the temperature difference power generation or store the energy at any time; a physiological monitoring system can integrate the thermoelectric film structure into the monitoring device of the patient, and can provide the power required for the monitoring device by using the temperature difference of the patient at any time; or wear it The belt fabric thermoelectric action energy, the thermoelectric film structure or the thermoelectric conversion element is incorporated into the fabric, and the temperature difference between the body temperature and the environment can be charged for the required electric appliance when worn on the body.

Experimental example

Thermoelectric film structure preparation

After the surface of the poly(arylene) substrate is cleaned, a sputtering process is performed to form a P-type or N-type thermoelectric conversion material region, the P-type thermoelectric thin film material is Bi _0.5 Sb _1.5 Te ₃ , and the N-type thermoelectric thin film material is Bi ₂ Se _0.3 Te ₃ . The process pressure is 5 mTorr, the sputtering power is 15 W and 18 W, and the substrate temperature is room temperature and 250 °C. The film is formed to have a thickness of from several nanometers to about 2 microns. After the thermoelectric conversion material region is formed, a metal film is formed on one side of the thermoelectric conversion material region by an electron beam evaporation process. The metal here is silver. The evaporation rate is 1 angstrom/second, the thickness of the metal film is several nanometers to 300 nm, and the metal film is located on the right side of the thermoelectric conversion material region. Further, rapid annealing is performed to diffuse the metal thin film into a portion of the thermoelectric conversion material region, and a metal diffusion material region is formed on the right side of the thermoelectric conversion material region. And the metal diffusion material region has a concentration gradient of the metal. The rapid annealing process conditions were 5 minutes at 270 ° C and a full nitrogen process was used to form a P-type or N-type thermoelectric film structure.

Lateral becker coefficient analysis

The P-type and N-type thermoelectric film structures which were prepared in the above manner were measured for the transverse Schiesbeck coefficient. In the P-type thermoelectric film structure, when the temperature difference between the upper and lower surfaces of the thermoelectric film structure is 0.405 K, both voltage probes are placed on the thermoelectric conversion material region, and the potential difference in the thermoelectric conversion material region is 19.31 μV. This value can be regarded as the influence of external thermal disturbance. When the temperature difference between the upper and lower surfaces is 0.56K, the two voltage probes are respectively placed on the thermoelectric conversion material region and the metal diffusion material region, and the potential difference between the thermoelectric conversion material region and the metal diffusion material region is 514.10 μV. It can be confirmed from the experimental results that it is confirmed that the original thermoelectric conversion material does not have a lateral Schiesbeck coefficient when the potential difference is separately measured in the thermoelectric conversion material region. After forming the metal diffusion material region, the thermoelectric film structure has a lateral Sbeck coefficient, which can generate a potential difference in a direction perpendicular to the temperature difference. The measured lateral Sibeck coefficient is 918.4 μV/K, which is greater than the Sibeck coefficient of the original thermoelectric conversion material of 160 μV/K.

In the N-type thermoelectric film structure, when the temperature difference between the upper and lower surfaces of the thermoelectric film structure is 0.156 K, both voltage probes are placed on the thermoelectric conversion material region, and the potential difference in the thermoelectric conversion material region is -27.19 μV. At this time, this value can be regarded as the influence of external thermal disturbance. When the temperature difference between the upper and lower surfaces is 0.66K, the two voltage probes are respectively placed on the thermoelectric conversion material region and the metal diffusion material region, and the potential difference between the thermoelectric conversion material region and the metal diffusion material region is -491.63 μV. It can be confirmed from the experimental results that the original thermoelectric conversion material is not confirmed when the potential difference is measured separately in the thermoelectric conversion material region. Has a lateral Scheib coefficient. After forming the metal diffusion material region, the thermoelectric film structure has a lateral Sbeck coefficient, which can generate a potential difference in a direction perpendicular to the temperature difference. The measured lateral Becker coefficient is -744.89 μV/K, which is greater than the Sibeck coefficient of the original thermoelectric material -120 μV/K.

It can be seen from the experimental examples that, in some embodiments of the present invention, the thermoelectric thin film structure includes a thermoelectric conversion material region and a metal diffusion material region on one side of the thermoelectric conversion material region, and has a lateral Schiesbeck coefficient, which can be used in thermoelectricity. When the lower surface of the film structure has a temperature difference, a potential difference is generated on the side of the thermoelectric conversion material region and the side of the metal diffusion material in a direction perpendicular to the temperature difference. Unlike thermoelectric thin films that do not have a metal diffusion material region, since there is no lateral Sibeck coefficient, the potential difference can only be generated in the same direction as the temperature difference. If a temperature difference occurs on the upper and lower surfaces of the film, the potential difference is generated because the film thickness is too thin. It is also very small. If a temperature difference is generated on both sides of the film, the contact area is too small. Therefore, the thermoelectric film structure provided in some embodiments of the present invention can greatly increase the electrical properties of the thermoelectric film structure, so that the thermoelectric film structure not only has a large heating area, but also can generate a potential difference, and can improve the thermoelectric efficiency of the thermoelectric film structure. value. The thermoelectric thin film structure can form a thermoelectric thin film element and is applied to a thin film type thermoelectric generator and a thin film type thermoelectrically cooled wafer. It can also be combined with textiles or fabrics to create thermoelectric textiles that can be powered at any time by using the temperature difference between the human body and the environment.

100‧‧‧ Thermoelectric conversion material area

110‧‧‧Metal diffusion material zone

Claims (14)

A thermoelectric thin film structure comprising: a thermoelectric conversion material region comprising a thermoelectric conversion material; and a metal diffusion material region comprising a side of the thermoelectric conversion material in which the metal diffusion is distributed in the thermoelectric conversion material region to form the A thermoelectric thin film structure, wherein the thermoelectric conversion material comprises an N-type thermoelectric conversion material or a P-type thermoelectric conversion material or an N-type/P-type combined thermoelectric conversion material. The thermoelectric thin film structure according to claim 1, wherein the N-type thermoelectric conversion material is Bi ₂ Te ₃ or Bi ₂ Se _x Te _3-x material, and x is 0. Between 3 and 3. The thermoelectric thin film structure according to claim 2, wherein the N-type thermoelectric conversion material is Bi ₂ Se _0.5 Te _2.5 . The thermoelectric film structure according to claim 3, wherein the P-type thermoelectric conversion material is a material of Sb ₂ Te ₃ or Bi _y Sb _2-y Te ₃ , and Between 0 and 2. The thermoelectric film structure according to claim 4, wherein the P-type thermoelectric conversion material is Bi _0.5 Sb _1.5 Te ₃ . The thermoelectric thin film structure according to claim 1, wherein the thermoelectric conversion material comprises lead telluride (PbTe), zinc telluride (ZnSb), germanium telluride (SiGe), silver germanium (AgSbTe ₂ ) material, and germanium Ge (TeTe) or a combination thereof. The thermoelectric film structure of claim 1, wherein the metal is gold, copper, silver, platinum or a combination thereof. The thermoelectric thin film structure according to claim 1, wherein the metal is diffused and distributed on the lower side or the left and right sides of the thermoelectric conversion material in the thermoelectric conversion material region, and the diffusion distribution of the metal is a uniform distribution or a concentration gradient distribution. The thermoelectric thin film structure according to claim 1, wherein the concentration gradient distribution is decreased from an outer side of the metal diffusion material region to a center side of the thermoelectric conversion material region. The thermoelectric film structure of claim 1, further comprising a substrate, the thermoelectric conversion material region being located at the upper or lower end substrate, and the metal diffusion material region being located on the lower side or the left and right sides of the thermoelectric conversion material. The thermoelectric film structure of claim 10, wherein the substrate is a hard substrate or a soft substrate. The thermoelectric film structure of claim 11, wherein the hard base The material of the board contains enamel. The thermoelectric film structure of claim 11, wherein the material of the soft substrate comprises polyimide. The thermoelectric film structure according to claim 1 is applied to a film type thermoelectric generator or a film type thermoelectric cooling chip.