TW201537159A - Inspection condition information generation method and inspection condition information generation system for wafer inspection device - Google Patents

Abstract

An object of the present invention is to provide an inspection condition information generation method and an inspection condition information generation system, which, when applied to a plurality of wafer inspection devices, help reduce errors contained in brightness information of various inspected objects having different reflectivity so as to allow the brightness information to be shared to all the inspection devices without affecting secondary uses thereof. The present invention provides an inspection condition generation method and system, which generates inspection condition information of a device that photographs an outside appearance of a chip and conducts inspection; uses one device and another device to prepare a sample comprising a first reflection portion having first reflectivity and a sample comprising a second reflection portion having second reflectivity, and obtains the reflection brightness thereof to calculate the reflection brightness characteristic functions of the first reflection portion and the second reflection portion to calculate the reflection brightness characteristic function of any reflectivity; and in order to have the reflection brightness of the another device corresponding to an inspection object portion having unknown reflectivity identical, set the brightness setting value of the illumination light of said device to have the reflection brightness levels aligned.

Description

Inspection condition data generation method and inspection condition data generation system of wafer inspection device

The present invention relates to a method for generating an inspection condition data of a wafer inspection apparatus, and an inspection condition data generation system, which is automatically inspected on a substrate such as a wafer in a manufacturing step of a semiconductor device or an LED chip. The appearance of a fine circuit pattern or a device wafer or the like.

A semiconductor device or an LED chip (hereinafter referred to as a device wafer) is fabricated on a substrate such as a germanium wafer or a glass substrate, and a circuit pattern is laminated to form a plurality of layers. The device wafers are alternated between circuit pattern formation and inspection for a specific number of times during the manufacturing process, and then the device wafer is diced to a particular size and packaged from the substrate. In addition, in the formation of the circuit pattern, the presence or absence of defects such as scratches, foreign matter, and collapse of the circuit pattern on the substrate is checked by an automatic visual inspection device (for example, Patent Document 1).

FIG. 10 is a plan view of a semiconductor wafer in which a plurality of patterns to be inspected are arranged. FIG. 10 shows a case where the semiconductor wafer Wz to be inspected is placed on the mounting table 20. A plurality of wafers Dz(n) (n=1 to N) are patterned on the semiconductor wafer Wz. Further, the wafer Dz(n) is in the direction/order of the arrow symbol Vs indicated by a broken line in the figure, that is, Dz(1), Dz(2), Dz(3), Dz(4), ..., The order of Dz(N) is taken sequentially. Each of the wafers Dz(1) to Dz(N) photographed while moving in the above-described order performs a specific inspection based on the captured image.

In addition, in the automatic visual inspection device, in order to detect a defect such as a circuit pattern formed on the object to be inspected in the same pattern, it is detected as an inspection object. The brightness value of the image is corrected and compared with the brightness value of the reference image, and the pattern defect is checked (for example, Patent Document 2).

Furthermore, in the case of using a plurality of inspection devices for inspection, each inspection device is considered, and based on the set inspection condition data and the machine difference correction data for each device, inspection of other inspection devices is generated. The condition data is checked (for example, Patent Document 3).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 6-74972

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-158780

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2010-239041

Figure 11 is a conceptual diagram showing the correction of the brightness setting value of each device of the prior art. In the prior art, the brightness setting value is changed at a portion having a specific reflectance, and the machine difference correction between devices is performed.

In other words, in the form in which the inspection condition data of the other wafer inspection apparatus is generated based on the set inspection condition data and the machine difference correction data (the so-called inspection condition data is shared), when focusing on the brightness correction The reflectance of one of the reflection surfaces of the inspection target area is treated as a representative value of the whole. Therefore, in the brightness correction by the prior art, uniform brightness correction is performed regardless of the reflectance of each inspection target portion. Further, it is not a problem in the form of determining whether or not the inspection target portion is good or bad.

However, when the respective inspection target portions having different reflectances are mixed, if the previous brightness correction (that is, uniform brightness correction) is performed, an error is generated in the correction of the reflectance.

Figure 12 is a diagram showing the correction of the brightness setting value of each device of the prior art. The picture is displayed in a portion where the reflectance is high and the portion where the reflectance is low, and the correction characteristics are slightly different.

In other words, when a plurality of wafer inspection apparatuses are used, it is necessary to perform correction corresponding to the reflectance in order to more accurately determine the quality of the inspection target portion.

Therefore, an object of the present invention is to provide an inspection condition data generation method and an inspection condition data generation system, which are capable of reducing brightness information for each inspection target portion having different reflectances when using a plurality of wafer inspection apparatuses. The error is included, and the inspection condition data of each inspection device is shared.

In order to solve the above problems, a first aspect of the present invention is an inspection condition data generation method and an inspection condition data generation system that generate a wafer for inspection by the same inspection condition as another wafer inspection apparatus that operates first. Inspecting the inspection condition data of the apparatus; and using the other wafer inspection apparatus and the wafer inspection apparatus described above, each of the samples is prepared to include a first reflection unit that performs film formation of the first reflectance, and includes and a sample of a second reflection portion formed by a second reflectance having a different reflectance; a light that is irradiated to the first reflection portion by setting the illumination light to a first brightness setting value, and reflecting the light from the first reflection portion The intensity is obtained as the reflected brightness with respect to the first brightness setting value of the first reflecting portion, and the illumination is set to the second brightness setting value by the first reflecting portion, and is reflected from the first reflecting portion. The intensity of the light is obtained as a reflection brightness with respect to the second brightness setting value of the first reflection unit, and the illumination light is set to the first brightness setting value and irradiated to the second reflection unit, and the second reflection is performed. Counter The intensity of the emitted light is obtained as the reflected brightness with respect to the first brightness setting value of the second reflecting portion, and the illumination light is set to the second brightness setting value and irradiated to the second reflecting portion, and The intensity of the light reflected from the second reflecting portion is obtained as the reflected brightness with respect to the second brightness setting value of the second reflecting portion; and the reflected brightness and the reflection brightness with respect to the first brightness setting value of the first reflecting portion The second brightness setting value of the first reflecting portion calculates a characteristic of the reflected brightness with respect to an arbitrary brightness setting value of the first reflecting portion with respect to the reflected brightness, and reflects based on the first brightness setting value of the second reflecting portion. The brightness and the reflected brightness with respect to the second brightness setting value of the second reflecting portion are calculated as characteristics of the reflected brightness with respect to an arbitrary brightness setting value of the second reflecting portion; and based on an arbitrary brightness setting value of the first reflecting portion The characteristics of the reflected brightness and the characteristics of the reflected brightness with respect to the arbitrary brightness setting value of the second reflecting portion, and the characteristics of the reflected brightness relative to the inspection target portion of the arbitrary brightness setting value of the arbitrary brightness setting value are calculated; The inspection device is characterized by a reflection brightness relative to an inspection target portion of an arbitrary reflectance of an arbitrary brightness setting value calculated by the wafer inspection device The characteristic of the reflected brightness relative to the inspection target portion of the arbitrary reflectance of the arbitrary brightness setting value calculated by the other wafer inspection device is the reflection brightness of the inspection target portion in the wafer inspection device, and In another wafer inspection apparatus, the reflection brightness with respect to the inspection target portion is the same, and the reflection brightness level is aligned at each portion where the reflectance of the inspection target portion is different.

According to this configuration, even if one of the wafer inspection apparatuses to be operated is in the case where the inspection target portions having different reflectances in the wafer are mixed, the same can be obtained as the inspection using another wafer inspection apparatus operating first. The results are checked and inspection condition data can be generated.

Further, in addition to the first aspect, the second aspect is also defined by a linear function as opposed to an arbitrary brightness setting value of the first reflecting portion. Calculating the slope component and the intercept component of the linear function defining the characteristic of the reflected luminance, and calculating the characteristic of the reflected luminance with respect to the arbitrary luminance setting value of the second reflecting portion by a linear function, and calculating the definition The slope component and the intercept component of the linear function of the characteristic of the reflected luminance.

Further, the third aspect is a wafer inspection apparatus of the first aspect or the second aspect.

Further, the fourth aspect is another wafer inspection apparatus of the first aspect or the second aspect.

When a plurality of wafer inspection apparatuses are used, the error included in the luminance information may be reduced for each inspection target portion having a different reflectance, and each inspection apparatus may share the inspection condition data.

20z‧‧‧mounting table

A1‧‧‧ Wafer inspection device (another device)

A2‧‧‧Mobile Platform Division

A3‧‧‧Lighting Department

A4‧‧‧Photography Department

A5‧‧‧Image Processing Department

A6‧‧‧Image Acquisition Department

A7‧‧‧ Inspection Department

A8‧‧‧Lighting intensity adjustment department

A9‧‧‧ Numerical Calculation Department

A10‧‧‧Control Department

A11‧‧‧ Registration Department

A12‧‧‧ Input Department

A13‧‧‧Display Department

A18‧‧‧ device framework

A20‧‧‧ mounting table

A21‧‧‧X-axis slider

A22‧‧‧Y-axis slider

A23‧‧‧θ axis table

A31‧‧‧Light source department

A32‧‧‧Lights released

A35‧‧‧Lighting intensity adjustment department

A40‧‧‧Mirror tube

A41‧‧‧ half mirror

A42‧‧‧Reflected light

A43‧‧‧Mirror tube

A44‧‧‧object lens

A44a‧‧‧object lens

A45‧‧‧ camera camera

A46‧‧‧Light-receiving components

B1‧‧‧ Wafer inspection device (one device)

B2‧‧‧Mobile Platform Division

B3‧‧‧Lighting Department

B4‧‧‧Photography Department

B5‧‧‧Image Processing Department

B6‧‧‧Image Acquisition Department

B7‧‧‧ Inspection Department

B8‧‧‧Lighting intensity adjustment department

B9‧‧‧ Numerical Calculation Department

B10‧‧‧Control Department

B11‧‧‧ Registration Department

B12‧‧‧ Input Department

B13‧‧‧Display Department

B18‧‧‧ device framework

B20‧‧‧ mounting table

B21‧‧‧X-axis platform

B22‧‧‧Y-axis platform

B23‧‧‧θ axis table

B24‧‧‧Light source department

B25‧‧‧Lights released

B26‧‧‧Lighting intensity adjustment department

B41‧‧‧ half mirror

B42‧‧·Reflex light

B43‧‧‧Mirror tube

B44‧‧‧object lens

B45‧‧‧ camera camera

B46‧‧‧ Light-receiving components

C1‧‧‧ Wafer inspection device (further device)

D(1)~D(52)‧‧‧ wafer

Dz(1)~Dz(N)‧‧‧ wafer

G‧‧‧reflective brightness

G’‧‧·reflective brightness

R1‧‧‧1st reflectance

R2‧‧‧2nd reflectance

R3‧‧‧3rd reflectance

r _n ‧‧‧ arbitrary reflectivity

V‧‧‧ observation area

Vs‧‧ arrow symbol

W‧‧‧ wafer

W11‧‧‧ Orientation plane

W12‧‧‧ alignment mark

W12a‧‧‧ Alignment marks per wafer

W13‧‧‧Semiconductor chip circuit pattern

W14‧‧‧Semiconductor Chip Circuit Division

W15‧‧‧Semiconductor wafer electrode

W16‧‧‧Semiconductor Chip Group

W17‧‧‧Dimensional reference mark of known size

Ws1‧‧‧1st reflection

Ws2‧‧‧2nd reflection

Ws3‧‧‧3rd reflection department

Wz‧‧‧Semiconductor Wafer

X1‧‧‧1st brightness setting

X2‧‧‧2nd brightness setting

x _n ‧‧‧any brightness setting

Fig. 1 is a conceptual diagram showing an example of another wafer inspection apparatus for embodying the present invention.

Fig. 2 is a conceptual view showing an example of a wafer inspection apparatus for embodying the present invention.

Fig. 3 is a plan view showing an example of a sample for embodying the present invention.

4 is a diagram showing an example of a patterned semiconductor wafer on a wafer.

Fig. 5 is a flow chart showing an example of a form in which the present invention is embodied.

Figure 6 is a conceptual diagram showing the reflectance and the reflected brightness characteristics of each brightness setting.

Fig. 7 is a conceptual diagram showing the brightness setting value and the reflection brightness characteristic of each reflectance.

Fig. 8 is a view showing the appearance of a substrate in which the present invention is embodied and inspected.

Figure 9A is a conceptual diagram of a process for aligning reflective brightness levels to embody the present invention.

Figure 9B is a conceptual diagram of a process for aligning reflective brightness levels to embody the present invention.

FIG. 10 is a plan view showing an example of a wafer in which a plurality of patterns to be inspected are placed.

Figure 11 is a conceptual diagram showing the correction of the brightness setting value of each device of the prior art.

Figure 12 is a conceptual diagram showing the correction of the brightness setting value of each device of the prior art.

The mode for carrying out the invention will be described using the drawings.

Fig. 1 is a conceptual diagram showing an example of another wafer inspection apparatus for embodying the present invention.

In FIG. 1, a wafer inspection apparatus A1 for inspecting a wafer inspection system for generating inspection condition data based on a captured image is combined with a perspective view of each constituent device, and an image is acquired and necessary for inspection. The block diagram of the composition. In addition, in each figure, the three axes of the orthogonal coordinate system are set to X, Y, and Z, the XY plane is set to a horizontal plane, and the Z direction is set to a vertical direction. In particular, the Z direction sets the direction of the arrow symbol to the upper direction and the reverse direction to the lower direction.

The wafer inspection apparatus A1 according to an embodiment of the present invention is configured to include a mounting table A20, a moving platform unit A2, an illumination unit A3, an imaging unit A4, an image processing unit A5, an image acquisition unit A6, and an inspection. Part A7, illumination intensity adjustment unit A8, numerical calculation unit A9, and control unit A10. In the wafer inspection apparatus A1, the registration unit A11, the input unit A12, the display unit A13, and the like are included as needed.

The mounting table A20 mounts the substrate W to be inspected, and forms a flat surface in the XY direction. The mounting table A20 is formed with a groove or a hole in a portion on which the substrate to be inspected is placed. Furthermore, the trough or pore is connected to a vacuum source or a source of compressed air via an on-off valve.

The moving platform portion A2 moves the mounting table A20 to any position on the XY plane. The moving platform unit A2 is configured to include an X-axis platform portion A21, a Y-axis platform portion A22, and a θ-axis. Taiwan A23. The X-axis platform portion A21 is mounted on the device frame A18 and includes: a guide rail extending in the X direction; and an X-axis slider (not shown) movable on the guide rail at a specific speed and at any position still. The Y-axis slider A22 is mounted on the X-axis slider and includes: a guide rail extending in the Y direction; and a Y-axis slider (not shown) movable on the guide rail at a specific speed, and Stand still at any position. The θ-axis stage A23 is attached to the Y-axis slider, and the mounting table A20 attached to the θ-axis stage A23 can be rotated or stopped in the θ direction in which the z-axis is the rotation axis.

According to this configuration, the moving platform portion A2 can move/rotate the mounting table A20 at a specific speed independently or in combination in the X direction, the Y direction, and the θ direction, and can be stationary at an arbitrary position/angle.

The illumination unit A3 is configured to include the light source unit A31 by irradiating the substrate W to be inspected with light. The light source unit A31 is connected to an illumination intensity adjusting unit 8 which will be described later. Further, the light source unit A31 changes the intensity of the light irradiated to the substrate W in accordance with the magnitude of the voltage/current transmitted from the illumination intensity adjusting unit 8.

The light source unit A31 is attached to the lens barrel A40, and the light A32 emitted from the light source unit A31 is reflected by the half mirror A41 assembled to the lens barrel A40, and is irradiated to the substrate W by the objective lens A44a.

Specifically, the light source unit A31 can be exemplified by an LED, a fluorescent lamp, a mercury lamp, a metal halide lamp, an incandescent lamp, a laser diode, or the like, and the radiation is corresponding to the light receiving sensitivity of the imaging element A46 of the imaging unit A4 to be described later. The wavelength/intensity of the light can be. Further, the light source unit A31 can be exemplified as a continuous lighter, a scintillator, and a person who appropriately emits light according to a control signal from the outside (so-called stroboscopic illumination). Here, an example using stroboscopic illumination will be described.

The stroboscopic illumination is configured to cooperate with the movement of the X-axis slider A21 or the Y-axis slider A22 of the moving platform portion A2, and to repeatedly emit light for each specific feed pitch. Further, the light source unit A31 is not limited to the form of being directly attached to the lens barrel A40, and may be a form that uses a light guide from a light source provided in another place to guide light.

The imaging unit A4 captures a pattern on the substrate W to be inspected, and includes a lens barrel A40, a half mirror A41, a counter lens A44a, and an imaging camera A45. The imaging camera A45 is configured to include the light receiving element A46, and the light A42 reflected by the observation region V on the substrate W in the light A35 irradiated to the substrate W passes through the objective lens A42a, the half mirror A41, and the lens barrel A43. The image irradiated to the light receiving element A46 is output as image data to the outside.

Specifically, the imaging camera A45 performs imaging simultaneously with the illumination of the stroboscopic illumination, and outputs the image signal or image data of the captured image to the outside. At this time, since the illuminating time of the stroboscopic illumination is extremely short, even if it is an image taken while moving, it can be photographed as a still image.

The image processing unit A5 acquires an image to be inspected by the imaging camera A45, performs so-called image processing in advance, and performs determination or inspection, and includes an image acquisition unit A6 which will be described later. With inspection department A7.

Specifically, the image processing unit A5 is configured by using a device (hardware) called a so-called image processing device and an execution program (software). More specifically, the image processing apparatus can be exemplified by a haplotype having an image processing function or a form in which a substrate called an image processing board is incorporated in a personal computer, a workstation, or the like.

The image acquisition unit A6 acquires a pattern included in the observation region V on the substrate W captured by the light receiving element A46 of the imaging camera A45 as image data. Specifically, an image input port or an image data input port constituting the hardware of the image processing unit A5 can be exemplified.

The inspection unit A7 determines whether or not the image to be inspected is good or bad. Various aspects can be exemplified for the determination of the quality of the specific captured image. For example, it is possible to perform a specific image processing on a captured image, and to determine whether or not the quality is determined based on the luminance value, the dispersion value, the CV value, or the like, or to compare the inspection reference image or the adjacent image registered in advance to determine the quality. Wait.

The illumination intensity adjusting unit A8 adjusts the luminous intensity of the illumination unit A3. in particular, The illumination intensity adjustment unit 8 can be exemplified as a unit called a lamp power source, and can adjust the voltage/current supplied to the illumination unit A3 based on a control signal or data transmitted from an external device (the control unit A10 in the configuration of FIG. 1). The composition of size.

The numerical calculation unit A9 performs specific arithmetic processing on the signals or data transmitted from the connected units based on the program registered in advance or the inspection condition data described later, and outputs signals to the connected units based on the result of the arithmetic processing. Or information.

Specifically, the numerical calculation unit A9 is configured to include a personal computer or a workstation (hardware) and an execution program (software). Further, the details will be described later, but the execution program is programmed to execute a series of steps (s11 to s19) necessary for embodying the present invention.

The control unit A10 controls the robots of the connected units based on the operation pattern of the program registered in advance or the inspection condition data described later. In the case of the wafer inspection apparatus A1 exemplified herein, the control unit A10 is connected to the movement platform unit A2, the inspection unit A7, the illumination intensity adjustment unit 8, the numerical calculation unit A9, the registration unit A11, the input unit A12, and the display unit A13. Wait for the connection.

Specifically, the control unit A10 can be exemplified by a control panel mounted on a personal computer or a workstation, a programmable logic controller (PLC), and a control device such as a mobile controller.

The registration unit A11 registers the inspection condition data, the calculation result of the numerical calculation unit A9, the image obtained after the image or image processing, the characteristics of the reflected brightness of each reflection unit, various kinds of information, various materials, and the like. Specifically, the registration unit A11 can be exemplified as a hard disk, a semiconductor memory, or the like.

The input unit A12 is for the operator to input information necessary for the operation of the wafer inspection apparatus A1. Specifically, the input unit A12 can be used as an input device for performing character/digital input, position designation, on/off selection, and the like, such as a keyboard, a mouse, a touch panel, and a switch.

The display unit A13 is for operating the wafer inspection apparatus A1, inspection results, and conditions. The information necessary for the state and other preparations/operations is notified to the operator. Specifically, the display unit A13 can exemplify a display device such as a liquid crystal monitor or a lamp. Further, the above-described wafer inspection apparatus A1 may be configured to include a sound output unit such as a buzzer or a speaker instead of or in combination with the display unit A13.

Since the wafer inspection apparatus A1 has the above-described configuration, the mounting table A20 on which the substrate W to be inspected is placed can be moved at a specific speed and continuously photographed, and image data corresponding to the inspection target pattern can be obtained. Further, it is possible to perform inspection based on the acquired captured image. The details of the generation of the inspection condition data for the wafer inspection apparatus 1A will be described later.

Fig. 2 is a conceptual view showing an example of a wafer inspection apparatus for embodying the present invention. In FIG. 2, a perspective view of each device of the wafer inspection apparatus B1 for performing inspection based on the captured image and for generating the inspection condition data, and a block diagram necessary for the image acquisition and inspection are collectively described.

The wafer inspection apparatus B1 according to an embodiment of the present invention is configured to include a mounting table B20, a moving platform unit B2, an illumination unit B3, an imaging unit B4, an image processing unit B5, an image acquisition unit B6, and an inspection. Part B7, illumination intensity adjustment unit B8, and control unit B9. In addition, the wafer inspection apparatus B1 includes an registration unit B10, an input unit B12, a display unit B13, and the like. The details of the respective configurations of the wafer inspection apparatus B1 are the same as those of the wafer inspection apparatus 1A described above, and thus the description thereof will be omitted. The details of the generation of the inspection condition data for the wafer inspection apparatus 1B will be described later.

Alternatively, a wafer inspection apparatus C1 having the same configuration as the wafer inspection apparatuses A1 and B1 may be used. In this case, in applying the present invention, the wafer inspection apparatus C1 corresponds to a wafer inspection apparatus, and the wafer inspection apparatuses A1, B1 correspond to another wafer inspection apparatus.

(wafer and camera status)

3 is a plan view showing an example of a wafer which is a part of the embodiment of the present invention. Figure. On the wafer W, wafers D(1) to D(52) of a specific size are arranged in a matrix at a specific interval. The wafers D(1) to D(52) are formed by a plurality of patterning steps such as film formation, exposure, development, and etching. Therefore, each material in the wafer has a different reflectance depending on the material of the wiring pattern or the material of the film formed thereon, the thickness of the film, and the like.

Here, in order to simplify the description, each wafer is displayed in a map, and the portion Ws1 of the first reflectance r1, the portion Ws2 of the second reflectance r2, and the portion Ws3 of the third reflectance r3 are present in each wafer. Further, the sample used in the present invention may be selected from the manufacturing steps of the actual semiconductor device, or may be a specially fabricated wafer containing a portion having a different reflectance (a so-called reference workpiece). Further, as the sample used in the present invention, any portion (Ws1, Ws2) having reflectances r1 and r2 having at least two levels may be used.

Fig. 4 is a conceptual diagram showing an imaging state of an example of a form in which the present invention is embodied. In FIG. 4, the cameras A45 and B45 are displayed on the wafers W, and the first wafer D(1) to the fourth wafer D(4) are sequentially photographed. The imaging cameras A45 and B45 move relative to the wafer W in the direction of the arrow symbol Vs. At the timing shown in FIG. 4, the camera cameras A45, B45 take the third wafer D (3). In this case, the optical components such as the lens are not shown, but the range of the observation region V which is set to be slightly wider than the wafer D (3) is projected on the light receiving element 46.

Further, in order to embody the present invention, it is not limited to the form of stroboscopic imaging as described above, and the imaging unit may be in a form of continuous shooting using a line sensor. In this case, the illumination unit is not in the form of stroboscopic illumination, but is in the form of continuous illumination.

[Check condition data generation process]

Hereinafter, a flow of the inspection condition data generation representative of the wafer inspection apparatus A1 that is operated first and the wafer inspection apparatus B1 that is to be operated later will be described.

Fig. 5 is a flow chart showing an example of a form in which the present invention is embodied, and a series of processes for generating inspection condition data is displayed at each step. Wafer inspection devices A1 and B1 are for The following series of programs can be performed automatically or semi-automatically by the operator, and the numerical calculation units A9 and B9, the control units A10 and B10, and the like are pre-programmed, and various necessary information, various materials, and the like are registered in advance in the registration unit. A11, B11, etc.

(sample preparation)

First, a sample substrate which is commonly used by the above-described wafer inspection apparatus A1 and the wafer inspection apparatus B1, that is, the above-described wafer W is prepared (step s1).

In other words, the third reflection portion Ws2 which is a portion of the first reflection portion r1 and the second reflection portion W2, which is a portion of the first reflection portion r1, and the third reflection portion, which is a portion of the third reflectance r3, is the third reflection portion. Ws3.

(The reflection brightness characteristic of the wafer inspection apparatus A1 is calculated)

Next, the wafer W is placed on the mounting table A20 of the wafer inspection apparatus A1 that is operated first (step s10), and the following operations are performed.

First, the illumination light A32 is irradiated to the first reflection portion Ws1 of the wafer W. At this time, in the illumination intensity adjustment unit 8, the light source unit A31 is set to the first brightness setting value x1. In this state, the intensity of the light A42 reflected from the first reflecting portion is obtained as the reflected brightness g1 with respect to the first brightness setting value x1 of the first reflecting portion (step s11).

Then, in the illumination intensity adjustment unit 8, the light source unit A31 is set to the second brightness setting value x2, and the illumination light A32 is continuously applied to the first reflection unit Ws1 of the wafer W. In this state, the intensity of the light A42 reflected from the first reflecting portion is obtained as the reflected brightness g2 with respect to the second brightness setting value x2 of the first reflecting portion (step s12).

Next, the illumination light A32 is irradiated to the second reflection portion Ws2 of the wafer W. At this time, in the illumination intensity adjustment unit 8, the light source unit A31 is set to the first brightness setting value x1. In this state, the intensity of the light A42 reflected from the second reflecting portion is obtained as the reflected brightness g3 with respect to the first brightness setting value x1 of the second reflecting portion (step s13).

Then, in the illumination intensity adjustment unit 8, the light source unit A31 is set to the second brightness setting value x2, and the illumination light A32 is continuously applied to the second reflection unit Ws2 of the wafer W. In this state, The intensity of the light A42 reflected from the first reflecting portion is obtained as the reflected brightness g2 with respect to the second brightness setting value x2 of the second reflecting portion (step s14).

Further, the above-described steps s11 to s14 may be sequentially processed in time series. However, if the first reflection portion Ws1 and the second reflection portion Ws2 are simultaneously irradiated with light of the same intensity, the first reflection portion Ws1 and the second portion can be used. In the case where the reflection portion Ws2 is simultaneously photographed by the imaging camera A45, the following order may be employed. In other words, the illumination light is set to the first luminance setting value x1, and the first reflection portion Ws1 and the second reflection portion Ws2 are simultaneously irradiated, and the reflection luminances g1 and g3 of the respective portions are obtained (steps s11 and s13 are performed). Then, the illumination light is set to the second brightness setting value x2, and the first reflection portion Ws1 and the second reflection portion Ws2 are simultaneously irradiated, and the reflection brightness of each portion is obtained (steps s12 and s14 are performed). Alternatively, steps s12 and s14 may be performed first, and then steps s11 and s13 may be performed.

Then, based on the reflected luminance g1 with respect to the first luminance setting value x1 of the first reflecting portion Ws1 and the reflected luminance g3 with respect to the second luminance setting value x2 of the first reflecting portion Ws1, the arbitrary luminance with the first reflecting portion is calculated. The characteristic of the set value with respect to the reflected brightness (step s15).

Similarly, based on the reflected brightness with respect to the first brightness setting value x1 of the second reflecting portion Ws1 and the reflected brightness with respect to the second brightness setting value of the second reflecting portion, an arbitrary brightness setting value with the second reflecting portion is calculated. The characteristic of the relative brightness is reflected (step s16).

Here, the concept of deriving the characteristic of the reflected luminance based on the reflected luminances g1, g2, g3, and g4, the luminance setting values x1, x2, and the reflectances r1 and r2 of the respective portions obtained in the above steps s11 to s14 will be described.

Fig. 6 is a conceptual diagram showing the reflectance and the reflected brightness characteristic of each brightness setting value, and shows the brightness of each of the first reflecting portion Ws1 of the reflectance r1 and the second reflecting portion Ws2 of the reflectance r2. The relationship between how the actual reflected brightness changes when the value changes.

For example, the first reflection portion Ws1 can be defined by the equation (1) which is approximated by the straight line of the luminances g1 and g2 by the luminance setting values x1 and x2, respectively, and can be expressed by the equations (2) and (3). Generally said.

[Number 3] g = a 1‧ x + b 1‧‧‧‧‧(3)

In other words, the formula (3) corresponds to one of the types of "the characteristics of the reflected brightness with respect to the arbitrary brightness setting value of the first reflecting portion" of the present invention.

Similarly, the second reflection portion Ws2 can be defined by the equation (4) which is approximated by the straight line of the luminances g3 and g4 by the luminance setting values x1 and x2, and can be expressed by the equations (5) and (6). Said.

[Number 5]

[Number 6] g' = a 2‧ x + b 2‧‧‧‧‧(6)

In other words, the formula (6) corresponds to one of the types of "the characteristics of the reflected brightness with respect to the arbitrary brightness setting value of the second reflecting portion" of the present invention.

Further, when the reflection luminance characteristics with respect to the reflectances r1 and r2 are patterned, as shown in FIG. Fig. 7 is a conceptual diagram showing the brightness setting value and the reflection brightness characteristic of each reflectance, showing the relationship between how the actual reflection brightness changes when the reflectance is changed for each of the brightness setting values x1 and x2. By.

For example, the brightness setting value x1 can be defined by the equation (7) which is approximated by the straight line of the luminances g1 and g3 by the reflectances r1 and r2, respectively. Further, the brightness setting value x2 can be defined by the equation (8) which is approximated by the straight line of the luminances g2 and g4 by the reflectances r1 and r2, respectively.

[Equation 7] g = c 1‧ r + d 1‧‧‧‧‧(7)

[8] g' = c 2‧ r + d 2‧‧‧‧‧(8)

Further, the use of any brightness setting value x _n, defined reflectance r1, r2 of the reflection luminance when _{g n, g 'n,,} (10) can be represented as shown with the formula (9). Further, as a general formula for reflecting the luminances g _n and g' _n at the reflectances r1 and r2, a numerical formula (11) which is approximated by a straight line with respect to an arbitrary reflectance r can be defined. It is expressed by the formulas (12) and (13).

[9] g _n = a 1‧ x _n + b 1‧‧‧‧‧(9)

[Number 10] g' _n = a 2‧ x _n + b 2‧‧‧‧‧(10)

[Number 11] y = c _n ‧ r + d _n ‧‧‧‧‧(11)

[12] g _n = C _n ‧ r 1+ d _n ‧‧‧‧‧(12)

[13] g' _n = C _n ‧ r 2+ d _n ‧‧‧‧‧(13)

Therefore, the equations (14) to (17) can be derived from the equations (12) and (13).

Therefore, the equations (16) and (17) and the equation (11) can be calculated based on the known reflectances r1 and r2 and the obtained reflected luminances g1, g2, g3, and g4.

In other words, the arbitrary reflectance with the arbitrary brightness setting value X _{n can} be calculated based on the characteristics of the reflected brightness with respect to the arbitrary brightness setting value of the first reflecting portion and the characteristic of the reflected brightness with respect to the arbitrary brightness setting value of the second reflecting portion. The characteristic of the detected object portion relative to the reflected brightness of r (step s17).

(The reflection brightness characteristic of the wafer inspection device B1 is calculated)

The above display uses the wafer inspection apparatus A1 to perform a series of programs (steps s10 to s17), and performs the same series of programs using the wafer inspection apparatus B1 (steps s20 to s27).

(Processing of the wafer inspection device B1 to reflect the brightness level alignment)

Next, the wafer inspection apparatus B1 is used to perform the processing of aligning the reflected luminance levels as follows (step s30).

That is, in the process of aligning the reflected brightness levels, the following processing is performed:

The characteristics of the reflected brightness based on the inspection target portion of the arbitrary reflectance of any brightness setting value calculated by the wafer inspection device B1 and

The characteristic of the reflected brightness relative to the inspection target portion of the arbitrary reflectance of any brightness setting value calculated by the wafer inspection apparatus A1,

In order to make the reflection brightness of the wafer inspection apparatus B1 opposite to the inspection target portion and the reflection brightness of the wafer inspection apparatus A1 with respect to the inspection target portion, the reflection brightness level is reflected at each portion where the reflectance of the inspection target portion is different. Quasi-aligned.

8 is an external view of a substrate in which the present invention is inspected, and the wafers Db (1) to Db (52) to be inspected are patterned on the substrate W1, and each wafer is divided into wafers. Do not include inspection target parts Wb1 to Wb3 with different reflectances. In fact, in the substrate to be inspected, there are a plurality of reflectances of the inspection target portion (that is, a plurality of stages). Here, for the sake of simplicity, a description will be given of a case where the respective reflectances rb1, rb2, and rb3 are different. .

9A and FIG. 9B are conceptual diagrams showing a process of aligning the reflected brightness levels for embodying the present invention, and aligning the reflected brightness levels of the inspection target portion Wb1 (reflectance rb1) of FIG. The processing of the schema.

The wafer inspection apparatus A1 that is operated first is set to the brightness setting value Xa, and the inspection target portion of the reflectance r is the reflection brightness ga. In addition, the wafer inspection apparatus B1 that performs the inspection under the same inspection conditions is set to the brightness setting value Xb, and the inspection target portion of the reflectance r is the reflection brightness gb.

Next, a process of converting the reflected luminance gb from the reflectance r into the reflected luminance ga is performed. This processing is also performed on other inspection target portions Wb2 (reflectance rb2) and Wb3 (reflectance rb3) having different reflectances.

In this way, in each of the portions where the reflectance of the inspection target portion is different, the reflection brightness of the wafer inspection device B1 facing the inspection target portion and the reflection brightness of the wafer inspection device A1 opposite to the inspection target portion can be made. Again, the reflected brightness levels are aligned.

Further, as a process of aligning the above-described reflection luminance levels, a method called so-called comparison table processing can be applied. In this processing, the reflected luminances ga and gb of a certain reflectance r are respectively associated with each other (so-called association), and each of the reflectances different for the inspection target portion is registered using the numerical value conversion table corresponding to the reflected luminance. Therefore, the reflected brightness gb of the wafer inspection apparatus B1 is immediately converted into the reflected brightness ga of the wafer inspection apparatus A1.

Therefore, when the wafer inspection apparatuses A1 and B1 are inspected, even if the reflection brightness of each part of the inspection target portion is different, the inspection target portion obtained by using the wafer inspection apparatus B1 can be used as the crystal. Round inspection device A1 with the same reflection brightness The obtained inspection target portion is processed. Therefore, even if the images are obtained with different brightness setting values in different devices, the inspection results equivalent to those in the same inspection device with the same brightness setting value can be obtained. Further, the step of aligning the reflection luminance levels is not limited to the comparison table processing as described above, and the configuration may be defined by a calculation process by defining a correspondence relationship with a linear function or the like.

Further, in the wafer inspection apparatuses A1 and B1, corresponding to the above-described steps s11 to s30, a program for performing the operation/processing is included as a mechanism for performing the operation/processing of each step. Further, the wafer inspection apparatus B1 includes a program for generating inspection condition data as a means for generating inspection condition data using the same.

In order to simplify the description, the brightness setting value is set to two levels (x1, x2), the reflectance is set to two levels (r1, r2), and the reflected brightness characteristics are approximated by a straight line, respectively. It is also possible to increase the level and to approximate it by a polynomial of two or more times. Alternatively, a logarithmic approximation, a power approximation, or an exponential approximation may be employed in conjunction with the characteristics of the brightness setting value or the reflectance.

With this configuration, the wafer inspection apparatus B1 to be operated later can be photographed at the same brightness as that in the case of using the wafer inspection apparatus A1 that operates first, even if the reflectance of the inspection target portion is different for each wafer. And can generate inspection condition data. Further, the wafer inspection device B1 can obtain the same inspection result as the wafer inspection device A1 by using the inspection condition data.

Therefore, when a plurality of wafer inspection apparatuses are used, the error included in the luminance information can be reduced for each inspection target portion having a different reflectance, and each inspection apparatus can share the inspection condition data.

[other forms]

In addition, in the above steps s15, s16, s25, s26,

Displaying the characteristics of the reflected brightness with respect to the arbitrary brightness setting value of the first reflecting portion and the reflecting brightness with respect to the arbitrary brightness setting value of the second reflecting portion, respectively The secondary function is defined, and the order of the slope component (so-called proportional coefficient) and the intercept component (so-called offset value) of the primary function is calculated. If it is set as such, the process of aligning the reflected brightness level in the above step s30 can be quickly performed, so that it can be called a preferred form.

By doing so, it is easy to generate inspection condition data in the wafer inspection apparatus B1 to be operated later.

Further, in the case of performing a process of matching the reflection brightness levels with higher precision, the characteristics of the reflection brightness may be defined by a plurality of functions of a second order function or more, or an exponential function, a logarithmic function, or other numbers. Further, in this case, in the wafer inspection apparatuses A1 and B1, in order to calculate the variable component or the intercept component of the reflected brightness characteristics defined by the above, a mechanism including an action/processing for performing a specific step is also employed ( That is, the composition of the processing program).

As a result, in the wafer inspection apparatus B1 to be operated later, the generation of inspection condition data having high reproducibility with the wafer inspection apparatus A1 that is operated first can be realized.

A1‧‧‧ Wafer inspection device (another device)

A2‧‧‧Mobile Platform Division

A3‧‧‧Lighting Department

A4‧‧‧Photography Department

A5‧‧‧Image Processing Department

A6‧‧‧Image Acquisition Department

A7‧‧‧ Inspection Department

A8‧‧‧Lighting intensity adjustment department

A9‧‧‧ Numerical Calculation Department

A10‧‧‧Control Department

A11‧‧‧ Registration Department

A12‧‧‧ Input Department

A13‧‧‧Display Department

A18‧‧‧ device framework

A20‧‧‧ mounting table

A21‧‧‧X-axis slider

A22‧‧‧Y-axis slider

A23‧‧‧θ axis table

A31‧‧‧Light source department

A32‧‧‧Lights released

A40‧‧‧Mirror tube

A41‧‧‧ half mirror

A42‧‧‧Reflected light

A44a‧‧‧object lens

A45‧‧‧ camera camera

A46‧‧‧Light-receiving components

V‧‧‧ observation area

W‧‧‧ wafer

Claims (6)

A method for generating inspection condition data of a wafer inspection apparatus, which is characterized in that it is used to inspect an inspection condition of a wafer inspection apparatus under the same inspection conditions as another wafer inspection apparatus that operates first, and is used. Each of the other wafer inspection apparatus and the wafer inspection apparatus described above prepares a sample including a first reflection portion that forms a film having a first reflectance, and includes a second reflectance that is different from the first reflectance. a sample of the second reflection portion that is formed into a film, and includes a step of irradiating the illumination light to the first brightness setting value to the first reflection portion, and irradiating the intensity of the light reflected from the first reflection portion as Acquiring with the reflected brightness of the first brightness setting value of the first reflecting portion, and setting the illumination light to the second brightness setting value to the first reflecting portion, and irradiating the intensity of the light reflected from the first reflecting portion Obtained as a reflected luminance with respect to the second brightness setting value of the first reflecting portion, and the illumination is set to the first brightness setting value by the second reflecting portion, and the light reflected from the second reflecting portion is irradiated Strength Obtained as a reflected luminance with respect to the first brightness setting value of the second reflecting portion, and the illumination is set to the second brightness setting value by the second reflecting portion, and the light reflected from the second reflecting portion is irradiated The intensity is obtained as a reflection brightness with respect to the second brightness setting value of the second reflection unit; the reflection brightness with respect to the first brightness setting value of the first reflection unit and the second brightness setting of the first reflection unit The value is calculated as a characteristic of the reflected brightness with respect to the arbitrary brightness setting value of the first reflecting portion with respect to the reflected brightness; the reflected brightness with respect to the first brightness setting value of the second reflecting portion, and the second reflecting portion The second brightness setting value is calculated relative to the reflected brightness. a characteristic of an arbitrary brightness setting value of the reflecting portion with respect to the reflected brightness; and a characteristic of the reflected brightness based on an arbitrary brightness setting value of the first reflecting portion and a reflection brightness relative to an arbitrary brightness setting value of the second reflecting portion The characteristic is obtained by calculating the characteristic of the reflected brightness with respect to the inspection target portion of the arbitrary reflectance at an arbitrary brightness setting value, and includes the following processing step: using the above-described one wafer inspection device, based on the one wafer inspection device The characteristic of the reflected brightness with respect to the inspection target portion of the arbitrary reflectance at any brightness setting value and the characteristic of the reflected brightness relative to the inspection target portion of the arbitrary reflectance at the arbitrary brightness setting value calculated by the other wafer inspection apparatus In order to make the reflection brightness of the inspection target portion in the wafer inspection apparatus the same as the reflection brightness of the inspection target portion of the other wafer inspection apparatus, each of the portions having different reflectances at the inspection target portion Align the reflected brightness levels. The method for generating an inspection condition data of the wafer inspection apparatus of claim 1, comprising the step of: defining a characteristic of the reflection brightness with respect to an arbitrary brightness setting value of the first reflection portion by a function, and calculating a definition of the reflection brightness. a slope component and an intercept component of a linear function of the characteristic; and defining, by a linear function, a characteristic of a reflected luminance corresponding to an arbitrary luminance setting value of the second reflecting portion, and calculating a slope component of a linear function defining a characteristic of the reflected luminance Intercept component. A wafer inspection system for generating an inspection condition data generation system for inspecting inspection condition data of a wafer inspection apparatus under the same inspection conditions as another wafer inspection apparatus that operates first, and using the above Another wafer inspection device and the above wafer inspection device, each package The mechanism includes: illuminating the illumination light to the first brightness setting value to the first reflection portion, and illuminating the intensity of the light reflected from the first reflection portion as a first brightness setting value of the first reflection portion Obtained by the reflected brightness; the illumination is set to the second brightness setting value by the first reflection unit, and the intensity of the light reflected from the first reflection unit is set as the second brightness of the first reflection unit. The value is obtained by setting the illumination light to the first brightness setting value to the second reflection unit, and the intensity of the light reflected from the second reflection unit is the first one of the second reflection unit. The brightness setting value is obtained with respect to the reflected brightness; the illumination light is set to the second brightness setting value by the second reflection unit, and the intensity of the light reflected from the second reflection unit is used as the second reflection part. The second brightness setting value is obtained with respect to the reflected brightness; and based on the reflected brightness with respect to the first brightness setting value of the first reflecting portion and the reflected brightness with respect to the second brightness setting value of the first reflecting portion, Any brightness of the first reflecting portion a characteristic of the set value with respect to the reflected brightness; and the second reflection is calculated based on the reflected brightness with respect to the first brightness setting value of the second reflecting portion and the reflected brightness with respect to the second brightness setting value of the second reflecting portion a characteristic of an arbitrary brightness setting value relative to the reflected brightness; and a characteristic of the reflected brightness based on an arbitrary brightness setting value of the first reflecting portion and a reflected brightness relative to an arbitrary brightness setting value of the second reflecting portion The characteristic is calculated as a characteristic of the reflected brightness with respect to the inspection target portion at an arbitrary reflectance of an arbitrary brightness setting value, and includes a processing mechanism that is calculated based on the one wafer inspection device using the above-described wafer inspection device Characteristics of the reflected brightness relative to the inspection target portion of any reflectance at any brightness setting value and The characteristic of the reflected brightness with respect to the inspection target portion of the arbitrary reflectance at the arbitrary brightness setting value calculated by the other wafer inspection apparatus is the reflection brightness of the inspection target portion in the wafer inspection apparatus, and In the other wafer inspection apparatus, the reflection brightness with respect to the inspection target portion is the same, and the reflection luminance level is aligned at each of the portions where the reflectance of the inspection target portion is different. The inspection condition data generation system of the wafer inspection apparatus of claim 3, comprising: a function of defining a reflection brightness corresponding to an arbitrary brightness setting value of the first reflection portion by a function of a first time, and calculating a definition of the reflection brightness a slope component and an intercept component of a linear function of the characteristic; and defining, by a linear function, a characteristic of a reflected luminance corresponding to an arbitrary luminance setting value of the second reflecting portion, and calculating a slope component of a linear function defining a characteristic of the reflected luminance Intercept component. A wafer inspection apparatus, which is a wafer inspection apparatus according to any one of claims 1 to 4. A wafer inspection apparatus is another wafer inspection apparatus according to any one of claims 1 to 4.