TW201535822A - Organic electroluminescence display device and manufacturing method thereof - Google Patents

Abstract

The topic of the present invention is to provide a top-emission type organic electroluminescence display device capable of obtaining a high barrier property without thickening a sealing layer and a manufacturing method thereof. The solution of the present invention is a top-emission type organic electroluminescence display device (1). An organic EL element (16) on which a bottom electrode layer (13), an organic EL layer (14), and a top electrode layer (15) are successively stacked is formed on a substrate (11) through a driving circuit (12), thereby further forming the top-emission type organic electroluminescence display device (1) with a sealing layer (17) to seal the top side of the organic EL device (16), wherein the top electrode layer (15) and the sealing layer (17) are formed by an atom layer deposition method.

Description

Organic electroluminescence display device and method of manufacturing same

The present invention relates to a top-emission type organic electroluminescence display device and a method of fabricating the same.

The organic electroluminescence display device is attracting attention as a display device of a next generation because it is a low-power consumption, natural light-emitting type, and a color tone light emission from an organic light-emitting material.

Such an organic electroluminescence display device can be classified into a bottom emission type in which light is taken out from under the organic electroluminescence layer and a top emission type in which light is taken out from the organic electroluminescence layer. Among them, in the top emission type organic electroluminescence display device, since the area of the organic electroluminescence layer having a large number of light-emitting portions can be obtained, it is advantageous in improving luminous efficiency and the like.

As a top emission type organic electroluminescence display device, the basic configuration is as shown in FIG. 6, and has a glass substrate 101 on which a driving circuit (thin film transistor (TFT)) 102 is formed, on which The formed lower electrode layer 103, the organic electroluminescent layer 104, and the organic electroluminescent element 106 of the upper electrode layer 105, and the sealing layer 107 which is further formed on the organic electroluminescent element 106 are sequentially formed. Such a top An emission type organic electroluminescence display device is disclosed in, for example, Patent Documents 1 and 2.

As the lower electrode layer 103, for example, an anode electrode is formed. a film having a large work function such as indium tin oxide (ITO) or indium zinc oxide (IZO); and as the upper electrode layer 105, for example, a semitransparent film in which a film having a small work function such as magnesium or magnesium silver is formed as a cathode electrode Both are formed by a physical vapor deposition method (PVD method) such as vacuum evaporation or sputtering. Further, the sealing layer 107 is a layer which seals intrusion of moisture or the like from the outside, and is formed by, for example, tantalum nitride or the like by a chemical vapor deposition method (CVD method), in particular, a plasma plasma CVD method.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-149594

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-130615

However, in the case where the upper electrode layer 105 is formed by a vacuum evaporation method or a sputtering method, as shown in an enlarged view in Fig. 7, there are cases where a large number of pinholes 108 or cracks 109 are present and the coverage of the organic electroluminescent layer 104 is changed. Not enough. In particular, when the fine particles 110 are present in the organic electroluminescent layer 104, there is a concern that the coverage of the portion is poor and the large pores 111 are formed. The sealing layer 107 formed thereon cannot be formed with sufficient adhesion. Therefore, it is necessary to increase the thickness of the sealing layer 107 by several μm in order to have sufficient barrier properties against external moisture or the like. However, in this case, there is a possibility that the light emission from the organic electroluminescent layer is attenuated. Further, there is a possibility that the crack of the upper electrode layer 105 is enlarged by heat, impact, or the like, and also propagates to the sealing layer 107 which is formed thickly, and the barrier property of the organic electroluminescent layer 104 is lowered by the sealing layer 107. When the barrier property is lowered in this manner, the life of the display device itself is lowered.

The present invention is directed to such a situation, and the subject matter thereof is A top emission type organic electroluminescence display device capable of sealing a layer which is not thick and which has high barrier properties and a method of manufacturing the same.

In order to solve the above problems, a first aspect of the present invention provides an organic electroluminescence display device comprising an organic electroluminescence comprising a lower electrode layer, an organic light-emitting layer having an organic electroluminescence layer, and an upper electrode layer. And a top-emission organic electroluminescence display device characterized in that a sealing layer on the upper surface of the organic electroluminescence element is sealed; and a top-emission organic electroluminescence display device that removes light emitted from the light-emitting function layer toward the sealing layer side At least the upper surface of the upper electrode layer is formed, and the sealing layer is formed by an atomic layer deposition method.

In the first aspect described above, the lower electrode layer may be a cathode electrode and the upper electrode layer may be an anode electrode. In this case, the upper electrode layer of the anode electrode can be made of an indium zinc oxide film. Composition.

In addition, the lower electrode layer may be made as an anode. The electrode and the upper electrode layer are configured as a cathode electrode. In this case, the upper electrode layer of the cathode electrode may have a two-layer structure, and the layer including the above-mentioned upper field may be composed of an indium zinc oxide film. Further, the upper electrode layer of the cathode electrode is composed of an indium zinc oxide film; the light-emitting functional layer has an organic electroluminescent layer and an electron injecting layer adjacent to the upper electrode layer; and the electron injecting layer is formed by using an atomic layer It is composed of a zinc oxide film formed by a deposition method.

Furthermore, the foregoing sealing layer may be constructed of an aluminum oxide film. to make. Further, at least the upper surface including the upper electrode layer can function as a sealing layer.

According to a second aspect of the present invention, an organic electric power is provided A method for producing a light-emitting display device comprising: an organic electroluminescence device in which a lower electrode layer, a light-emitting function layer having an organic electroluminescence layer, and an upper electrode layer are sequentially laminated, and a sealing of the upper surface of the organic electroluminescence element is sealed a method of manufacturing a top-emission organic electroluminescence display device that removes light emitted from the light-emitting function layer toward the sealing layer side, characterized in that the upper electrode layer is formed by an atomic layer deposition method At least the upper side of the field, after which the foregoing sealing layer is formed by atomic layer deposition on the upper electrode layer.

The field of at least the upper side of the upper electrode layer may be It is formed by an indium zinc oxide film. Further, the sealing layer may be formed of an aluminum oxide film.

According to the present invention, at least the upper surface region and the sealing layer including the upper electrode layer are formed by the atomic layer deposition method, and therefore, it is possible to form such a good film having excellent coverage and no pinholes or cracks, not only The sealing layer and the upper electrode layer can also function as a sealing layer, and these two layers can be used to obtain a high moisture sealing effect. Therefore, the sealing layer can be made thick and high in barrier properties.

1, 2, 3‧‧‧Organic electroluminescent display device

11, 21, 31‧‧‧ substrates

12, 22, 32‧‧‧ drive circuit

13, 23, 33‧‧‧ lower electrode layer

14, 24, 34‧‧‧ Organic electroluminescent layer

15, 25, 35‧‧‧ upper electrode layer

16, 26, 36‧‧‧Organic electroluminescent elements

17, 27, 37‧ ‧ sealing layer

25a‧‧‧1st floor

25b‧‧‧2nd floor

38‧‧‧Electronic injection layer

Fig. 1 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a first embodiment of the present invention.

Fig. 2 is a cross-sectional view showing, in an enlarged manner, an upper electrode layer and a sealing layer of a top emission type organic electroluminescence display device according to a first embodiment of the present invention.

Fig. 3 is a schematic view showing an apparatus for performing an atomic layer deposition method.

Fig. 4 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a second embodiment of the present invention.

Fig. 5 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a third embodiment of the present invention.

Fig. 6 is a cross-sectional view showing a front emission type organic electroluminescence display device.

Fig. 7 is a cross-sectional view showing, in an enlarged manner, the upper electrode layer and the sealing layer of the former top emission type organic electroluminescence display device.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same reference numerals are given to the same portions for all the drawings referred to.

<First embodiment> (Composition of organic electroluminescence display device)

Fig. 1 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a first embodiment of the present invention.

As shown in FIG. 1, the organic electroluminescence display device 1 of the first embodiment has a substrate 11 on which a driving circuit (thin film transistor (TFT)) 12 is formed, on which a substrate 11 is formed. The organic electroluminescent element 16 in which the lower electrode layer 13, the organic electroluminescent layer (light emitting layer) 14 and the upper electrode layer 15 are laminated in this order, and a sealing formed on the organic electroluminescent element 16 In the layer 17, light from the organic electroluminescent layer 14 is taken out from the side of the sealing layer 17 on the side opposite to the substrate 11.

In the present embodiment, the lower electrode layer 13 is a cathode electrode, and the upper electrode layer 15 is an anode electrode, and the positions of the anode electrode and the cathode electrode are opposite to those of the former top emission type organic electroluminescence display device shown in FIG. 6.

Next, when a voltage is applied to the lower electrode layer 13 and the upper electrode layer 15 by the drive circuit 12, electrons flow from the cathode electrode and the positive electrode from the anode electrode to the organic electroluminescent layer 14, by the organic electroluminescent layer 14 The luminescent molecules allow electrons to recombine with the positive holes to illuminate.

The material of the substrate 11 is not particularly limited, and for example, glass Glass plates, ceramic plates, plastic films, metal plates, etc. Further, as the substrate 11, it is preferable to have heat resistance and barrier properties. A specific example uses a glass substrate as the substrate 11.

The electrode layer 13 under the cathode electrode is made of electron injection It can be composed of a metal or an alloy having a high work function (for example, 4.0 eV or less), and the material thereof can be determined by a material which is equal to the upper electrode layer 15 which is an anode electrode. The lower electrode layer 13 is light-reflective and also functions as a reflective film. The material of the cathode electrode may be a material generally used, and aluminum or magnesium or an alloy thereof may be suitably used. A specific example uses aluminum. The lower electrode layer 13 can be formed by a PVD method such as a vacuum deposition method or a sputtering method.

The organic electroluminescent layer 14 is configured to have a light-emitting function The light-emitting functional layer is composed of an organic light-emitting substance that allows electrons to be injected from the cathode electrode and the positive hole from the anode electrode when a voltage is applied, and which allows the injected charge to move and recombine the positive hole and the electron. The organic light-emitting substance is generally used as a low molecular or high molecular organic substance in the light-emitting layer, and is not particularly limited.

Further, as the light-emitting functional layer, the organic electroluminescent layer may be 14 single layers, and a positive hole transport layer or an electron transport layer, or a combination of these may be used. Further, it is also possible to supplement the electron injection layer for electron injection, or the positive hole injection layer for assisting the positive hole injection, or both.

The upper electrode layer 15 is made of an anode electrode and is injected by a positive hole. Conductive compound with high work function (for example, above 5.0 eV) The material can be determined by the material of the lower electrode layer 13 which is a cathode electrode. As the upper electrode layer 15, a light transmissive layer is used. The material of the anode electrode may be a material generally used, and indium tin oxide or indium zinc oxide may be suitably used. A specific example uses indium zinc oxide.

Previously, the upper electrode layer 15 was vacuum evaporated or sputtered. The PVD method is used for film formation, and in the present embodiment, the atomic layer deposition method (ALD method) is employed.

The sealing layer 17 is also formed by an atomic layer deposition method. material As the material, a material which can be formed by an atomic layer deposition method can be used. In this embodiment, a specific example is the use of alumina.

(The role of the organic electroluminescence display device of the first embodiment)

In the organic electroluminescence display device 1 configured as described above, when a voltage is applied to the lower electrode layer 13 and the upper electrode layer 15 by the drive circuit 12, electrons are emitted from the cathode electrode and the positive electrode from the anode electrode to the organic electroluminescent layer. 14 inflow, which emits light by recombining electrons with the positive holes in the luminescent molecules of the organic electroluminescent layer 14, is reflected by the lower electrode layer 13 of the metal film, and is taken out from the side of the sealing layer 17 opposite to the substrate 11 Light from electroluminescent layer 14.

Once upon a time, the system will be formed on the upper layer of the organic electroluminescent layer. The upper electrode layer is formed by a PVD method such as a vacuum deposition method or a sputtering method, and the sealing layer thereon is formed by a plasma CVD method. However, a film formed by a vacuum deposition method or a sputtering method may exist. More pinholes or cracks, The coverage (covering property) of the organic electroluminescent layer is not sufficient, and in particular, the coverage of the portion where the particles are present is poor, and there is a fear that a large void is formed. Further, the sealing layer formed thereon cannot be formed with good adhesion by plasma CVD, and it is necessary to increase the thickness of the sealing layer to a thickness of several μm in order to have sufficient barrier properties for external moisture or the like. Therefore, it is possible to cause the light emission from the organic electroluminescent layer to be attenuated, or it is possible that the crack of the upper electrode layer is enlarged by heat, impact, or the like, and the barrier property of the organic electroluminescent layer is lowered due to the sealing layer. Further, when the upper electrode layer is formed by a vacuum vapor deposition method or a sputtering method on the organic electroluminescence layer, there is a fear that damage may occur due to heat or plasma at this time.

In contrast, this embodiment uses atomic layer stacking. The upper electrode layer 15 and the sealing layer 17 are formed by a method. The atomic layer deposition method is a method in which a plurality of processing gases are repeatedly applied in series, and a plurality of processing gases for forming a film are intermittently supplied in sequence, and after the processing gas is supplied, the processing gas is flushed by the flushing gas onto the object to be processed. A method of reacting the plurality of processing gases and forming a thin unit film, and then forming a film of a specified thickness. In the atomic layer deposition method, since the operation of forming a thin unit film in this manner is repeated, the coverage to the substrate is extremely good, and since the processing gas does react, a good film having few pinholes or cracks can be obtained. .

Thus, the upper electricity is formed by using the atomic layer deposition method. The electrode layer 15 can be formed on the organic electroluminescent layer 14 with almost 100% coverage. As shown in the enlarged view of Fig. 2, voids do not occur even if the particles 18 are present, and in addition, pinholes or cracks in the film can be formed. Very few good quality membranes. Further, the sealing layer 17 can also be formed by an atomic layer deposition method, so that the coverage of the sealing layer 17 is also good, and the organic electroluminescent layer 14 can be completely covered. Therefore, both the upper electrode layer 15 and the sealing layer 17 can be utilized to obtain a high moisture sealing effect.

In this way, the upper electrode layer 15 is due to the coverage degree Since it is a good film which is free from pinholes or cracks, it is possible to thin the film itself and to function as a sealing layer, whereby the sealing layer 17 which is formed later can be thinned. Further, as the sealing layer 17 itself is formed by atomic layer deposition, the sealing effect is increased and the thickness can be reduced. Therefore, these effects are mutually complementary, and it is possible to maintain a high moisture barrier property, to extremely thin the sealing layer 17, and to obtain high moisture barrier properties, and the upper electrode layer 15 can also be thinned. Actually, the film thickness of the upper electrode layer 15 can be made 50 nm or less, and the film thickness of the sealing layer 17 can be made 100 nm or less.

Therefore, the light emission from the organic electroluminescent layer 14 can be made The organic electroluminescence display device having high luminance and high resolution is obtained without attenuating, and having less interference of light and obtaining high light transmittance.

In addition, both the upper electrode layer 15 and the sealing layer 17 are advantageous. By the atomic layer deposition method, the organic electroluminescent layer 14 is no longer damaged by heat or plasma.

(Example of film formation by atomic layer deposition method)

Next, a case where the indium zinc oxide film is formed as the upper electrode layer 15 will be described as an example of film formation by the atomic layer deposition method.

Figure 3 shows the device for performing the atomic layer deposition method. Schematic diagram. This apparatus includes a processing container 41 that accommodates the object S to be processed, a processing gas supply mechanism 42 that supplies a processing gas for forming a film to the processing container 41, and an exhaust mechanism 43 that discharges the gas in the processing container 41.

In the processing container 41, the placement of the built-in heater is set The base 52 of the body S.

The processing gas supply mechanism 42 has a first processing gas supply The source 61, the second processing gas supply source 62, the third processing gas supply source 63, and the flushing gas supply source 64 are supplied. The first processing gas is an indium-containing gas, the second processing gas is a zinc-containing gas, and the third processing gas is an oxidizing agent. In addition, the flushing gas system uses an inert gas such as nitrogen. The first processing gas supply source 61, the second processing gas supply source 62, the third processing gas supply source 63, and the flushing gas supply source 64 are connected to the gas supply pipes 65, 66, 67, and 68, respectively; and the gas supply pipes are provided. The collection pipe 71 is collected, and the collection pipe 71 is connected to the processing container 41. The flow rate controller 69 and the opening and closing valve 70 are provided in the gas supply pipes 65, 66, 67, and 68. The first processing gas supply source 61, the second processing gas supply source 62, and the third processing gas supply source 63 may be followed by a carrier for supplying carrier gas for vaporizing the raw material having a low vapor pressure and transporting it into the processing container 41. Gas supply piping. In this case, the carrier gas supply pipe may be provided separately from each of the processing gas supply sources, or may be provided in a divergent manner from the gas supply pipe 68 to which the flushing gas is supplied, and also serves as a flushing gas and a carrier gas.

The exhaust mechanism 43 has: a row that is connected to the processing container 41 The gas pipe 81, the opening and closing valve 83, the pressure control valve 84, and the vacuum pump 85 are provided. open The closing valve 83, the pressure control valve 84, and the vacuum pump 85 are provided in the exhaust pipe 81.

In terms of such devices, the base 52 is set at In the state of 25-300 ° C, the object to be processed S which is formed into the organic electroluminescent layer is placed on the susceptor 52 of the processing container 41, and the inside of the processing container 41 is adjusted to a predetermined pressure, and then a plurality of operations are repeated. The indium-containing gas, the zinc-containing gas, and the oxidizing agent are supplied to the processing container 41 intermittently (pulsatingly), and the processing gas in the processing container 41 is rinsed with the flushing gas after the processing gas is supplied to the object to be processed. The operation of reacting the plurality of processing gases on S to form a thin unit film, and then forming a film of a specified thickness. Specifically, in the order of indium-containing gas→flush→zinc-containing gas→flush→oxidant→washing, one cycle is repeated, and the designated cycle is repeated. Thereby, an indium zinc oxide film of a specified thickness is formed.

In the case of forming the aluminum oxide film of the sealing layer 17, in addition to the two processing gas supply sources, a device having substantially the same configuration is also employed. In other words, the plurality of returning operations are repeated, and the aluminum-containing gas and the oxidizing agent are intermittently (pulsed) supplied to the processing container 41 in the same manner as the object to be processed which is formed into the upper electrode layer, and the respective processing gases are supplied. Thereafter, the processing gas in the processing container 41 is rinsed with the flushing gas, and the plurality of processing gases are reacted on the object S to form a thin unit film, and then a film having a predetermined thickness is formed. Specifically, in the order of aluminum-containing gas→flush→oxidant→washing, one cycle is repeated, and the designated cycle is repeated. Thereby, an aluminum oxide film of a specified thickness is formed.

<Second embodiment>

Fig. 4 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a second embodiment of the present invention.

As shown in FIG. 4, the organic electroluminescence display device 2 of the second embodiment has a substrate 21 on which a driving circuit (thin film transistor (TFT)) 22 is formed, on which a substrate 21 is formed. The organic electroluminescent element 26 in which the lower electrode layer 23, the organic electroluminescent layer (light emitting layer) 24, and the upper electrode layer 25 are laminated in this order, and the sealing formed on the organic electroluminescent element 26 The layer 27 takes out light from the organic electroluminescent layer 24 from the side of the sealing layer 27 on the side opposite to the substrate 21.

In this embodiment, the lower electrode layer 23 is an anode. The pole and upper electrode layers 25 are cathode electrodes, and the cathode electrode upper electrode layer 25 has a two-layer structure of the first layer 25a and the second layer 25b.

Next, the lower electrode layer 23 is used by the driving circuit 22. When a voltage is applied to the upper electrode layer 25, electrons flow from the cathode electrode and the positive electrode from the anode electrode to the organic electroluminescent layer 24, and the electrons in the organic electroluminescent layer 24 recombine with the positive holes to emit light.

The electrode layer 23 under the anode electrode is injected from the positive hole It is composed of a conductive compound having a high work function (for example, 5.0 eV or more), and the material thereof can be determined by a material which is equal to the upper electrode layer 25 which is a cathode electrode. The lower electrode layer 23 may be a light reflective layer or a light transmissive layer. The material of the anode electrode may be a material generally used, and indium tin oxide or indium zinc oxide may be suitably used. A specific example uses indium tin oxide.

The organic electroluminescent layer 24 is the same as the first embodiment. The electroluminescent layer 14 is likewise constructed.

Making the cathode electrode upper electrode layer 25 is made by electron injection It can be composed of a metal or an alloy having a high work function (for example, 4.0 eV or less), and the material thereof can be determined by a material which balances the lower electrode layer 23 which is an anode electrode. The upper electrode layer 25 is a light transmissive layer. In this embodiment, the first layer 25a of the upper electrode layer 25 is made of a metal or an alloy. A specific example is a magnesium-silver alloy. The first layer 25a can be formed by a PVD method such as a vacuum deposition method or a sputtering method. As the second layer 25b, a general transparent electrode material such as indium zinc oxide or indium tin oxide is used. A specific example uses indium zinc oxide. In this embodiment, the second layer 25b is formed into a film by an atomic layer deposition method.

The sealing layer 27 is the same as the sealing layer 17 of the first embodiment. In the sample, a film formed by an atomic layer deposition method and a film formed by an atomic layer deposition method are used. A specific example uses alumina.

In this embodiment, the top-emitting organic Similarly, in the electroluminescence display device, the lower electrode layer 23 is used as the anode electrode and the upper electrode layer 25 is used as the cathode electrode, and the PVD method such as vacuum deposition or sputtering is used for film formation due to the relationship of the work function. The material is formed by forming the first layer 25a of the upper electrode layer 25 and the second layer 25b of the upper layer by the atomic layer deposition method. Therefore, the second layer 25b of the upper electrode layer 25 and the sealing layer 27 can be formed continuously to form a high layer. A good quality film having no coverage of pinholes or cracks can extremely thin the sealing layer 27 and obtain high moisture barrier properties.

Therefore, the light emitted from the organic electroluminescent layer 24 can be made The organic electroluminescence display device having high luminance and high resolution is obtained without attenuating, and having less interference of light and obtaining high light transmittance.

<Third embodiment>

Fig. 5 is a cross-sectional view showing a top emission type organic electroluminescence display device according to a third embodiment of the present invention.

As shown in FIG. 5, the organic electroluminescence display device 3 of the third embodiment has a substrate 31 on which a driving circuit (thin film transistor (TFT)) 32 formed is formed. The organic electroluminescent element 36 in which the lower electrode layer 33, the organic electroluminescent layer (light emitting layer) 34, the electron injecting layer 38, and the upper electrode layer 35 are laminated in this order, and further in the organic electroluminescent element 36 The sealing layer 37 formed thereon takes out light from the organic electroluminescent layer 34 from the side of the sealing layer 37 on the opposite side to the substrate 31.

In this embodiment, as in the second embodiment, The lower electrode layer 33 is an anode electrode, and the upper electrode layer 35 is a cathode electrode.

Next, the lower electrode layer 33 is used by the driving circuit 32. When a voltage is applied to the upper electrode layer 35, electrons flow from the cathode electrode and the positive electrode from the anode electrode to the organic electroluminescent layer 34, and the electrons in the organic electroluminescent layer 34 recombine with the positive holes to emit light.

The anode electrode layer 33 is formed by the positive hole injection It is composed of a conductive compound having a high work function (for example, 5.5 eV or more), and the material thereof can be determined by a material which is equal to the upper electrode layer 35 which is a cathode electrode. As the lower electrode layer 33, it may be light reflective Layer or light transmissive layer. The material of the anode electrode may be a material generally used, and indium tin oxide or indium zinc oxide may be suitably used. A specific example uses indium tin oxide.

Electron injection layer 38 is used as a supplement from the cathode electrode The partial electrode layer 35 injects a layer of electrons into the organic electroluminescent layer 34. With the electron injection layer 38, the work function of the upper electrode layer 35 of the cathode electrode can be adjusted. In this embodiment, the electron injection layer 38 is formed by an atomic layer deposition method. The material is not limited as long as it can form a film by an atomic layer deposition method and has a function of an electron injection layer. A specific example uses zinc oxide.

The upper electrode layer 35 is formed as a cathode electrode by electron injection The material can be made of a high material, and the material can be determined by taking into consideration both the material of the lower electrode layer 33 and the electron injection layer 38. In the present embodiment, by using the electron injecting layer 38, as the cathode electrode constituting the upper electrode layer 35, indium zinc oxide or indium tin oxide which is generally used for the function of the anode electrode can be used, and atomic layer deposition can be used. The material of the film formation. That is, in the present embodiment, the material of the upper electrode layer 35 serving as the cathode electrode is selected and formed by atomic layer deposition. A specific example uses indium zinc oxide.

The sealing layer 37 is the same as the sealing layer 17 of the first embodiment. The film is formed by a layer deposition method using a material which can be formed by an atomic layer deposition method. A specific example uses alumina.

In this embodiment, the top-emitting organic The electroluminescence display device similarly generates the organic electrode by using the lower electrode layer 33 as an anode electrode and the upper electrode layer 35 as a cathode electrode. The electron injection layer 38 is used as the light-emitting function layer in addition to the light layer 34, so that the work function can be controlled, and both the electron injection layer 38 and the upper electrode layer 35 can be formed by the atomic layer deposition method. In this manner, by forming the electron injecting layer 38, the upper electrode layer 35, and the sealing layer 37 by atomic layer deposition, it is possible to form the high-coverage, pinhole-free or crack-free. The good quality film can make the sealing layer 37 extremely thin and obtain high moisture barrier properties. Further, the electron injecting layer 38 and the upper electrode layer 35 can be formed on the organic electroluminescent layer 34 with almost 100% coverage against the organic electroluminescent layer 34, and voids can be formed even if fine particles are present. Further, it is possible to form a good film having few pinholes or cracks in the film and to make the films thin.

Therefore, the light emitted from the organic electroluminescent layer 34 can be made The organic electroluminescence display device having high luminance and high resolution is obtained without attenuating, and having less interference of light and obtaining high light transmittance.

Further, vacuum evaporation is performed on the organic electroluminescent layer 34. When the film is formed by a method or a sputtering method, there is a concern that heat or plasma may cause damage at this time. In this regard, in the embodiment, the electron injection layer 38, the upper electrode layer 35, and the sealing layer 37 can be formed by atomic layer deposition, and the organic electroluminescent layer 34 is not generated by heat or plasma. The damage caused.

Further, in the specific example of the electron injecting layer 38, the original zinc oxide is used. In the case of forming a film by the sub-layer deposition method, basically, a device having the same configuration as that of FIG. 3 is used, and a plurality of devices are repeatedly used to perform film formation to the organic electroluminescent layer. Treatment body, will contain zinc The gas and the oxidant are intermittently (pulsed) supplied to the processing container 41, and after the respective processing gases are supplied, the processing gas in the processing container 41 is rinsed by the flushing gas, and the plurality of types of processing are performed on the object S to be processed. The gas reacts to form a thin unit film, which is then formed into a film of a specified thickness. Specifically, in the order of zinc-containing gas→flush→oxidant→washing, one cycle is repeated, and the designated cycle is repeated. Thereby, a zinc oxide film of a specified thickness is formed.

<Other applicable>

Further, the present invention is not limited to the above embodiment and can be variously modified. For example, in the above embodiment, the layer constitution of several kinds of organic electroluminescence display devices is exemplified, but basically, as long as the area adjacent to at least the sealing layer of the upper electrode layer and the sealing layer thereon are continuous and atomic layer In the deposition method, the layer structure is not limited, and it may be configured as a suitable work function.

1‧‧‧Organic electroluminescent display device

11‧‧‧Substrate

12‧‧‧Drive circuit

13‧‧‧lower electrode layer

14‧‧‧Organic electroluminescent layer

15‧‧‧Upper electrode layer

16‧‧‧Organic electroluminescent elements

17‧‧‧ Sealing layer

Claims (11)

An organic electroluminescence display device comprising an organic electroluminescence device in which a lower electrode layer, a light-emitting function layer having an organic electroluminescence layer, and an upper electrode layer are sequentially laminated, and a sealing of the above-mentioned organic electroluminescence element is sealed a top-emission organic electroluminescence display device that removes light emitted from the light-emitting function layer toward the sealing layer side, characterized in that it includes at least the upper surface of the upper electrode layer, and the foregoing The sealing layers are all formed by atomic layer deposition. The organic electroluminescence display device according to claim 1, wherein the lower electrode layer is a cathode electrode; and the upper electrode layer is an anode electrode. The organic electroluminescence display device according to claim 2, wherein the anode electrode upper electrode layer is made of an indium zinc oxide film. The organic electroluminescence display device according to claim 1, wherein the lower electrode layer is an anode electrode; and the upper electrode layer is a cathode electrode. The organic electroluminescence display device according to claim 4, wherein the cathode electrode upper electrode layer has a two-layer structure, and the layer including the above-mentioned field is composed of an indium zinc oxide film. The organic electroluminescence display device according to claim 4, wherein the upper electrode layer of the cathode electrode is made of an indium zinc oxide film; the light-emitting functional layer has an organic electroluminescent layer and the upper electrode layer Adjacent electron injection layer; the electron injection layer is composed of a zinc oxide film formed by an atomic layer deposition method. The organic electroluminescence display device according to any one of claims 1 to 6, wherein the sealing layer is made of an aluminum oxide film. The organic electroluminescence display device according to any one of claims 1 to 7, wherein at least the upper surface of the upper electrode layer functions as a sealing layer. A method for producing an organic electroluminescence display device comprising: an organic electroluminescence device in which a lower electrode layer, a light-emitting function layer having an organic electroluminescence layer, and an upper electrode layer are sequentially laminated, and the organic electroluminescence device is sealed a sealing layer for forming a top-emission organic electroluminescence display device for extracting light emitted from the light-emitting function layer toward the sealing layer side, characterized by atomic layer deposition At least the upper surface side of the upper electrode layer, and then the sealing layer is formed on the upper electrode layer by an atomic layer deposition method. The method of manufacturing an organic electroluminescence display device according to claim 9, wherein The field of at least the upper side of the upper electrode layer is formed of an indium zinc oxide film. The method for producing an organic electroluminescence display device according to claim 9 or 10, wherein the sealing layer is formed of an aluminum oxide film.