TW201527565A - Electron gun apparatus and deposition apparatus - Google Patents

Abstract

The present invention provides an electron gun apparatus and a deposition apparatus capable of generating plural electron beams and simplifying the equipment. The electron gun apparatus comprises a first filament, a second filament, a power unit, a switching unit and a control portion. The first filament and the second filament are capable of generating a first electron beam and a second electron beam. The power unit has a heating current supply section that supplies heating current for having the first filament or the second filament generate the electron beam, and a bias supply section for supplying bias upon the heating current. The switching unit is configured into a manner that can selectively switch to a first state of which a driving current resulted from the heating current that was applied with bias voltage is supplied to the first filament, and a second state of which the driving current is supplied to the second filament. The control portion controls the switching of the first state and the second state.

Description

Electron gun device and vacuum evaporation device

The present invention relates to an electron gun apparatus and a vacuum vapor deposition apparatus used in a vacuum vapor deposition method or the like.

An electron gun device is a device that generates an electron beam by heating a filament. For example, the electron gun apparatus may be configured to apply an electron beam to an evaporation material disposed in the vapor deposition apparatus to heat the evaporation material, and evaporate the evaporation material (see, for example, Patent Documents 1 to 3). ). Typically, such an electron gun apparatus includes a power source for heating a heating wire for heating a filament, a coil for controlling a beam of the electron beam, a power source for the coil, and the like. Further, as shown in Patent Document 4, there is also known a method of performing vapor deposition using, for example, two electron gun devices.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2013-112894

Patent Document 2: Japanese Laid-Open Patent Publication No. 2002-97566

Patent Document 3: Japanese Patent Laid-Open No. Hei 1-149055

Patent Document 4: Japanese Laid-Open Patent Publication No. 2004-55180

However, in the case where two electron gun devices are used to alternately heat the evaporation material, when one of the electron gun devices is used, the other electron gun device is stopped. Alternatively, the same applies to the use of only one of the two electron gun devices. In these cases, the heating current of the other electron gun device is redundant with equipment such as a power source for the power source and the coil, and there is a possibility that the equipment cost is increased.

In view of the above problems, it is an object of the present invention to provide an electron gun apparatus and a vacuum vapor deposition apparatus which can generate a plurality of electron beams and simplify the apparatus.

In order to achieve the above object, an electron gun apparatus according to an embodiment of the present invention includes a first filament, a second filament, a power supply unit, a switching unit, and a control unit.

The first filament system can produce a first electron beam.

The second filament system can produce a second electron beam.

The power supply unit includes: a heating current supply unit that supplies a heating current for causing an electron beam to be generated by any one of the first filament and the second filament; and a bias supply unit for the heating current A bias voltage is applied.

The switching unit is configured to selectively switch between a first state and a second state, wherein the first state is to supply a driving current obtained by applying the bias voltage to the heating current to the first filament, the first The two states are for supplying the above drive current to the second filament.

The control unit controls switching between the first state and the second state.

1, 6‧‧‧ Vacuum evaporation device

2, 7, 8‧‧ ‧ chamber

3a, 9a‧‧‧First Evaporative Material Holding Department

3b, 9b‧‧‧Second Evaporation Material Holder

4‧‧‧Support

5‧‧‧Master controller

31a, 91a‧‧‧ first evaporation material

31b, 91b‧‧‧second evaporation material

100, 200, 300, 400, 500, 600‧‧‧ electron gun devices

110a, 210a, 410a‧‧‧ first filament

110b, 210b, 410b‧‧‧second filament

120a, 220a, 420a‧‧‧ first deflection coil (first deflector)

120b, 220b, 420b‧‧‧second deflection coil (second deflector)

130, 230, 530‧‧‧ power supply unit

131, 231, 281‧‧‧ heating current supply unit

132, 232, 432, 532‧‧ ‧ bias supply department

133, 233‧‧‧ bias current supply unit (bias power supply)

134, 234‧‧‧Power supply for heating current

135, 235‧‧ ‧ thyristor

136, 236‧‧‧First heating current circuit

137, 237‧‧‧First Transformer

138, 538‧‧‧ bias power supply

139, 539‧‧‧ resistors

140, 240, 540‧‧‧ Switching unit

141, 241‧‧‧ heating current switching unit

141a, 142a, 143a, 241a, 242a, first contact 243a, 282a‧ ‧ first contact

141b, 142b, 143b, 241b, 242b, 243b, 282b‧‧‧ second joint

141c, 142c, 143c, 241c, 242c, 243c‧‧‧ switching members

142, 242, 460‧‧ ‧ bias switching

143, 243‧‧‧ bias current switching

144, 244, 286‧‧‧second heating current circuit

145, 245‧‧‧ second voltage department

150, 250, 550 ‧ ‧ Control Department

160‧‧‧Detection Department

161a‧‧‧First drive current detection unit

161b‧‧‧Second drive current detection unit

162‧‧‧Pressure voltage detection unit

163a‧‧‧First bias current detection unit

163b‧‧‧Second bias current detection unit

260‧‧‧Connecting Department

261‧‧‧Power unit side terminal

261a, 262a‧‧‧ first terminal

261b, 262b‧‧‧ second terminal

261c, 262c‧‧‧ third terminal

261d, 262d‧‧‧ fourth terminal

261e, 262e‧‧‧ fifth terminal

261f, 262f‧‧‧ sixth terminal

262‧‧‧Switch unit side terminal

270‧‧‧Connection Switching Department

271‧‧‧First connection switching unit

272‧‧‧Second connection switching unit

273‧‧‧Second Transformer

280‧‧‧second power unit

282‧‧‧bias connection

282c‧‧‧First connection terminal

282d‧‧‧second connection terminal

282e‧‧‧First switching member

282f‧‧‧Second switching member

283‧‧‧ biased power supply

431a‧‧‧First heating current supply unit

431b‧‧‧second heating current supply unit

433a‧‧‧First bias power supply

433b‧‧‧Second bias power supply

434a‧‧‧Power supply for heating current

434b‧‧‧Power supply for heating current

B1‧‧‧First electron beam

B2‧‧‧second electron beam

W‧‧‧Substrate

Fig. 1 is a schematic view showing a vacuum vapor deposition apparatus including an electron gun apparatus according to a first embodiment of the present invention.

Fig. 2 is a circuit diagram of the above electron gun apparatus.

Fig. 3 is a flow chart showing an operation example of the control unit of the electron gun apparatus.

Fig. 4 is a circuit diagram of an electron gun apparatus according to a comparative example of the first embodiment of the present invention.

Fig. 5 is a schematic view showing a vacuum vapor deposition apparatus according to a reference example of the first embodiment of the present invention.

Fig. 6 is a circuit diagram of an electron gun apparatus according to a second embodiment of the present invention.

Fig. 7 is a circuit diagram showing a main part of a configuration and a connection relationship of a connecting portion of the above-described electron gun apparatus.

Fig. 8 is a circuit diagram of an electron gun apparatus according to a reference example of the second embodiment of the present invention.

Fig. 9 is a circuit diagram of an electron gun apparatus according to a third embodiment of the present invention.

An electron gun apparatus according to an embodiment of the present invention includes a first filament, a second filament, a power supply unit, a switching unit, and a control unit.

The first filament system described above can produce a first electron beam.

The second filament system described above can produce a second electron beam.

The power supply unit includes a heating current supply unit that supplies a heating current for causing an electron beam to be generated by any one of the first filament and the second filament, and a bias supply unit that biases the heating current Voltage.

The switching unit is configured to selectively switch between a first state and a second state, wherein the first state is to supply a driving current obtained by applying the bias voltage to the heating current to the first filament, the first The two states are for supplying the above drive current to the second filament.

The control unit controls switching between the first state and the second state.

According to the above electron gun apparatus, it is possible to selectively supply a heating current from the heating current supply unit to any one of the first filament and the second filament by the switching unit. Thereby, any one of the first electron beam and the second electron beam can be generated by one heating current supply unit, and the unnecessary configuration can be omitted, and the apparatus can be simplified.

Further, the heating current supply unit may include a heating current source and a first heating current circuit connected to the first filament. The switching unit may also be provided with: a second heating current circuit connected to The second filament and the heating current switching unit are connected to the heating current power source and the first heating current circuit in the first state, and connect the heating current power source and the second heating current circuit in the second state.

The heating current switching unit can selectively supply a heating current from the heating current source to any of the first heating current circuit and the second heating current circuit.

Furthermore, the switching unit may include a bias switching unit that connects the bias supply unit and the first heating current circuit in the first state, and connects the bias supply unit and the second state in the second state. A second heating current circuit.

Since the bias switching unit can connect the bias supply unit, the first heating current circuit, and the second heating current circuit, the heating current switching unit can switch the path of the heating current before applying the bias voltage that becomes the high voltage. .

Further, since the heating current switching unit can switch the heating current on the heating power supply side insulated from the bias voltage that becomes the high voltage, the heating current switching unit can be configured by a relatively simple relay or electromagnetic contactor.

In addition, the first heating current circuit may further include: a first transformer unit that converts a voltage value of the heating current. The second heating current The circuit may further include: a second transformer unit, which is a voltage value that can convert the heating current.

The voltage value of the heating current (driving current) can be converted into an appropriate voltage value by the first transformer unit and the second transformer unit.

Alternatively, the bias supply unit is connected to both the first heating current circuit and the second heating current circuit.

Thereby, the electron gun apparatus can be configured at a lower cost without switching the bias voltage of the high voltage.

Further, the control unit may determine whether the drive current is supplied to any one of the first heating current circuit and the second heating current circuit, and cause the heating when the drive current is not supplied to either one of the heating currents. The current is stopped by the power supply to supply the above heating current.

The control unit can monitor the drive current supplied to the first heating current circuit and the second heating current circuit, and can detect an abnormality such as a contact failure of the filament, a failure of the heating power source, or a failure of the bias switching unit. Therefore, it is possible to confirm the supply of the actual drive current and perform the actual switching, and it is possible to prevent the film formation failure caused by the switching abnormality.

The control unit may also determine whether there is a pair of bias supply units The heating current applies the bias voltage, and the first state and the second state are switched when the bias voltage is not applied.

Thereby, it is possible to avoid switching in a state where a bias voltage is applied, and it is possible to prevent defects such as melting of a contact such as a heating current switching unit.

Alternatively, the electron gun apparatus may further include: a first deflector biasing the first electron beam; and a second deflector biasing the second electron beam. The power supply unit may further include a bias current supply unit that supplies a current to one of the first deflector and the second deflector. The switching unit may include a deflection current switching unit that connects the deflection current supply unit and the first deflector in the first state, and connects the deflection current supply unit and the second deflector in the second state.

The current path from one bias current supply unit is switched by the deflection current switching unit, whereby either the first electron beam and the second electron beam can be deflected. Therefore, the simplification of the device can be achieved.

In this case, the control unit determines whether or not the current is supplied to one of the first deflector and the second deflector by the bias current supply unit, and switches the current when the current is not supplied to either one. The first state and the second state described above.

Furthermore, the electron gun device may include a connection portion that detachably connects the power source unit and the switching unit.

The switching unit can be connected later by the above-mentioned connecting portion, whereby the power supply unit and the switching unit can be individually processed during storage and transportation. Therefore, it can be easily stored and transported, and the handleability can be improved.

A vacuum vapor deposition apparatus according to another embodiment of the present invention includes a chamber that can be maintained in a vacuum, a support portion, a first evaporation material holding portion, a second evaporation material holding portion, and an electron gun device.

The support portion is disposed in the chamber to support the substrate.

The first evaporation material holding portion is disposed in the chamber and maintained at a ground potential for holding the first evaporation material.

The second evaporation material holding portion is disposed in the chamber and maintained at a ground potential for holding the second evaporation material.

The electron gun apparatus includes a first filament, a second filament, a power supply unit, a switching unit, and a control unit.

The first filament system may emit the first electron beam to the first evaporation material.

The second filament may emit a second electron beam to the second evaporation material.

The power supply unit includes a heating current supply unit that supplies a heating current for generating an electron beam by one of the first filament and the second filament, and a bias supply unit that applies the heating current Bias voltage.

The switching unit is configured to selectively switch between a first state and a second state, wherein the first state is to supply a driving current obtained by applying the bias voltage to the heating current to the first filament, the first The two states are for supplying the above drive current to the second filament.

The control unit controls switching between the first state and the second state.

According to the vacuum vapor deposition apparatus described above, the first electron beam and the second electron beam can be alternately generated by one heating current supply portion, whereby the redundant configuration can be omitted, and the apparatus can be simplified. In addition, since one chamber is provided, it is possible to produce a high-safety structure by preparing one of the first electron beam and the second electron beam in a chamber prepared for vapor deposition and maintained in a vacuum environment. .

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>

Fig. 1 is a schematic view showing a vacuum vapor deposition device according to a first embodiment of the present invention. The vacuum vapor deposition apparatus 1 includes a chamber 2, a first evaporation material holding unit 3a, a second evaporation material holding unit 3b, a support unit 4, a main controller 5, and an electron gun apparatus 100. The vacuum evaporation apparatus 1 heats the first evaporation material 31a and the second evaporation material 31b held by the first evaporation material holding unit 3a and the second evaporation material holding unit 3b by using the electron gun apparatus 100, thereby making the first evaporation material 31a and The second evaporation material 31b is evaporated in a vacuum and formed on the substrate W.

The chamber 2 is a vacuum chamber that can be maintained in a vacuum, and a vacuum pump (not shown) is connected to the chamber 2.

A support portion 4 for supporting a plurality of substrates W is mounted on the upper portion of the chamber 2. The support portion 4 may be constituted by a dome-shaped jig capable of holding a plurality of substrates W. In this case, the support portion 4 may be configured to be rotatable by a drive unit (not shown). Thereby, a plurality of substrates W can be uniformly formed into a film. Further, the support portion 4 is not limited to the above configuration.

The first evaporation material holding portion 3 a and the second evaporation material holding portion 3 b are disposed, for example, in a lower portion of the chamber 2 so as to face the support portion 4 . The first evaporation material holding portion 3a holds the first evaporation material 31a, and the second evaporation material holding portion 3b holds the second evaporation material 31b. Typically, the first evaporation material holding portion 3a and the second evaporation material holding portion 3b are each configured as a crucible for containing an evaporation material. In this case, the vacuum evaporation apparatus 1 may also have a hearth to which the crucible can be mounted. Further, the first evaporation material holding portion 3a and the second evaporation material holding portion 3b may be provided with an annular hearth having a first evaporation material 31a and a second evaporation material 31b capable of retaining solids.

Both the first evaporation material holding portion 3a and the second evaporation material holding portion 3b are maintained at the ground potential. Thereby, the first filament 110a and the second filament 110b which will be described later can be maintained at a positive potential.

The main controller 5 controls the driving of the entire vacuum vapor deposition apparatus 1. The main controller 5 generates switching control signals for controlling switching of, for example, the emission of the first electron beam B1 and the second electron beam B2. This switching control signal is used in the processing of the control unit 150 of the electron gun apparatus 100 to be described later.

The electron gun apparatus 100 selectively emits either of the first electron beam B1 and the second electron beam B2 into the chamber 2. The first electron beam B1 or the second electron beam B2 emitted from the electron gun apparatus 100 is injected into the first evaporation material 31a or the second evaporation material 31b by the control of each track, so that the first evaporation material 31a or the second is made. The evaporation material 31b is heated and evaporated. Further, in Fig. 1, a state in which the first electron beam B1 is incident on the first evaporation material 31a is shown. Hereinafter, the detailed configuration of the electron gun apparatus 100 will be described in detail.

[electron gun device]

The electron gun apparatus 100 includes a first filament 110a, a second filament 110b, a first deflecting coil 120a, a second deflecting coil 120b, a power source unit 130, a switching unit 140, a control unit 150, and a detecting unit 160. In the present embodiment, the electron gun apparatus 100 is configured to alternately emit the first electron beam B1 and the second electron beam B2, thereby interactively interacting the film containing the first evaporation material 31a with the film containing the second evaporation material 31b. It is laminated on the substrate W. Alternatively, the electron gun apparatus 100 may be configured to continuously emit only one of the first electron beam B1 and the second electron beam B2.

The first filament 110a produces a first electron beam B1. Specifically, the first A filament 110a is heated by a drive current by applying a bias voltage to a heating current to be described later, and emits hot electrons as the first electron beam B1. The first electron beam B1 is defined as a hot electron electrically extracted by an anode (not shown) provided separately from the first filament 110a functioning as a cathode.

The method of emitting the first electron beam B1 is not particularly limited. For example, the first electron beam B1 can be emitted into the chamber 2 via a hole or the like formed in the center of the anode, or can be electrically drawn out from the anode disposed in parallel with the first filament 110a, and via the first filament 110a. A Wehnelt (not shown) of the same potential is emitted into the chamber 2. Alternatively, the hot electrons emitted from the first filament 110a are caused to collide with the other cathodes, thereby causing the cathode to release the hot electrons, thereby generating the first electron beam B1. Further, a Veneta (not shown) for focusing the first electron beam B1 may be disposed between the cathode and the anode.

In the present embodiment, the first filament 110a emits the first electron beam B1 to the first evaporation material 31a.

The second filament 110b is for generating the second electron beam B2 and is constructed in the same manner as the first filament 110a. That is, specifically, the second filament 110b is heated by being energized, and the hot electrons that become the second electron beam B2 are released. The second electron beam B2 is also defined as a hot electron electrically extracted by an anode (not shown) provided separately from the second filament 110b acting as a cathode.

In the present embodiment, the second filament 110b emits the second electron beam B2 to the second evaporation material 31b.

The first deflecting coil 120a functions as the first deflector of the present embodiment, and deflects the first electron beam B1. The first deflection coil 120a is configured to control the current flowing through itself to thereby magnetically control the orbit of the first electron beam B1. The first electron beam B1 can be irradiated to the first evaporation material 31a with a desired orbit by the first deflection coil 120a.

The second deflecting coil 120b functions as the second deflector of the present embodiment to bias the second electron beam B2. Similarly to the first deflection coil 120a, the second deflection coil 120b is configured to control the current flowing through itself to magnetically control the orbit of the second electron beam B2. The second electron beam B2 can be irradiated to the second evaporation material 31b with a desired orbit by the second deflection coil 120b.

2 is a circuit diagram of the power supply unit 130 and the switching unit 140.

The power supply unit 130 supplies a drive current for causing either of the first filament 110a and the second filament 110b to generate the first electron beam B1 or the second electron beam B2. As shown in FIG. 2, the power supply unit 130 includes a heating current supply unit 131, a bias supply unit 132, and a deflection power supply (bias current supply unit) 133.

The heating current supply unit 131 supplies a heating current for causing an electron beam to be generated by any of the first filament 110a and the second filament 110b. As shown in Figure 2 The heating current supply unit 131 includes a heating current power supply 134, a thyristor 135, and a first heating current circuit 136.

The heating current power supply 134 is constituted by an alternating current power supply, and supplies a current of a predetermined frequency as a heating current. The heating current power supply 134 is configured to supply a driving current of, for example, up to about 50 A (amperes) to the first heating current circuit 136 and the second heating current circuit 144. The thyristor 135 is configured to control conduction and non-conduction of the heating current supplied from the heating current power supply 134, and to turn on the heating current in the driving state, and not to turn on the heating current in the undriven state.

The first heating current circuit 136 is connected to the first filament 110a. The first heating current circuit 136 is configured to be connectable to a heating current power supply 134, which will be described later, by the switching unit 140. The first heating current circuit 136 is a first voltage changing portion 137 including a voltage value of a switchable heating current.

The first transformer unit 137 can be configured as a transformer for heating current. For example, the first transformer unit 137 may have a primary coil and a secondary coil having different numbers of turns. In this case, the primary coil system may be connected to the heating current power source 134 via the thyristor 135, and the secondary coil system is connected to the first filament 110a. The heating current (driving current) can be converted into an appropriate voltage value by the first transformer unit 137. Further, it is possible to prevent a high voltage bias voltage from being applied to the heating current power source 134 on the primary coil side and the like.

The bias supply unit 132 applies a bias voltage to the heating current. A current obtained by applying a bias voltage to the heating current can drive the first filament 110a or the second filament 110b as a driving current. Further, the bias supply unit 132 is selectively connected to any one of the first heating current circuit 136 and the second heating current circuit 144 by the switching unit 140. In the present embodiment, the bias supply unit 132 includes a bias power supply 138 and a resistor 139.

The bias power source 138 is composed of a DC power source, and the positive electrode side is connected to the resistor 139, and the negative electrode side is connected to the heating current supply portion 131. The resistor 139 can be configured such that one side is connected to the positive side of the bias power supply 138, and the other side is maintained at the ground potential, and has a resistance value of, for example, about 3 Ω. By biasing the power supply 138 and the resistor 139, a negative high voltage of, for example, about 10 kV can be applied to the heating current as a bias voltage.

The bias power source 133 functions as the deflection current supply unit of the present embodiment, and supplies current to any of the first deflection coil 120a and the second deflection coil 120b. The bias power source 133 may also be composed of a current source that superimposes a predetermined frequency on the DC power source. Thereby, constant current control can be performed, and even when the temperature of the first deflection coil 120a and the second deflection coil 120b rises, a certain bias magnetic field can be generated. The bias power source 133 is selectively connected to any one of the first deflecting coil 120a and the second deflecting coil 120b via the switching unit 140. The bias power source 133 is configured to supply, for example, a current of up to about 1.5 A to the first deflection coil 120a and the second deflection coil 120b.

The switching unit 140 is configured to selectively switch between the first state and the second state, the first state is for supplying a driving current to the first filament 110a, and the second state is for supplying the driving current to the second Filament 110b. That is, the switching unit 140 is configured to selectively switch the supply of the heating current to the first filament 110a and the second filament 110b. Specifically, the first state is in a state where the first filament 110a generates the first electron beam B1, and the second state is in a state where the second filament 110b generates the second electron beam B2. In the present embodiment, the switching unit 140 includes a heating current switching unit 141, a bias switching unit 142, a deflection current switching unit 143, and a second heating current circuit 144.

The second heating current circuit 144 is constructed in the same manner as the first heating current circuit 136 and is connected to the second filament 110b. The second heating current circuit 144 is configured to be connected to the heating current power source 134 of the power source unit 130 by the heating current switching unit 141. The second heating current circuit 144 is a second voltage portion 145 that includes a voltage value that can convert the heating current.

Similarly to the first transformer unit 137, the second transformer unit 145 constitutes a transformer that can be used as a heating current, and may have, for example, a primary coil and a secondary coil having different numbers of turns. In this case, the primary coil system can be connected to the heating current power source 134, and the secondary coil system can be connected to the second filament 110b. The voltage value of the heating current (driving current) can be converted into an appropriate voltage value by the second transformer unit 145. Furthermore, it is possible to prevent a high voltage bias voltage from being applied The heating current applied to the primary coil side causes a problem with the power source 134 or the like.

The heating current switching unit 141, the bias switching unit 142, and the deflection current switching unit 143 can be configured, for example, by a relay, an electromagnetic contactor, or an SSR (Solid-State Relay) belonging to a semiconductor relay.

The heating current switching unit 141 connects the heating current power supply 134 and the first heating current circuit 136 in the first state, and connects the heating current power supply 134 and the second heating current circuit 144 in the second state. In the present embodiment, the heating current switching unit 141 includes a first contact 141a, a second contact 141b, and a switching member 141c. The first contact 141a includes a fixed contact connected to the first heating current circuit 136 and is connected to, for example, the primary coil side of the first transformer 137. The second contact 141b includes a fixed contact connected to the second heating current circuit 144 and is connected to, for example, the primary coil side of the second transformer 145. The switching member 141c is connected to the heating current power supply 134 and includes a movable contact.

In the first state, the movable contact of the switching member 141c is connected to the first contact 141a, whereby the heating current supplied from the heating current power supply 134 flows through the first heating current circuit 136. On the other hand, in the second state, the movable contact of the switching member 141c is connected to the second contact 141b, whereby the heating current supplied from the heating current power supply 134 flows through the second heating current circuit 144.

The bias switching unit 142 connects the bias supply unit 132 and the first heating current circuit 136 in the first state, and connects the bias supply unit 132 and the second heating current circuit 144 in the second state. In the present embodiment, the bias switching unit 142 includes a first contact 142a, a second contact 142b, and a switching member 142c. The first contact 142a includes a fixed contact connected to the first heating current circuit 136 and is connected to, for example, the secondary winding side of the first transformer 137. The second contact 142b includes a fixed contact connected to the second heating current circuit 144 and is connected to, for example, the secondary coil side of the second transformer 145. The switching member 142c is connected to the bias power supply 138 of the bias supply unit 132 and includes a movable contact.

The movable contact of the switching member 142c is connected to the first contact 142a in the first state, whereby the bias voltage supplied from the bias supply unit 132 is supplied to the first heating current circuit 136. On the other hand, the movable contact of the switching member 142c is connected to the second contact 142b in the second state, whereby the bias voltage supplied from the bias supply unit 132 is supplied to the second heating current circuit 144.

The deflection current switching unit 143 connects the deflection power supply 133 and the first deflection coil 120a in the first state, and connects the deflection power supply 133 and the second deflection coil 120b in the second state. In the present embodiment, the deflection current switching unit 143 includes a first contact 143a, a second contact 143b, and a switching member 143c. The first contact 143a includes a first deflection coil 120a Fixed contact. The second contact 143b includes a fixed contact connected to the second deflection coil 120b. The switching member 143c is connected to the deflection power source 133 and includes a movable contact.

The movable contact of the switching member 143c is connected to the first contact 143a in the first state, whereby the current supplied from the bias power source 133 is supplied to the first deflection coil 120a. On the other hand, the movable contact of the switching member 143c is connected to the second contact 143b in the second state, whereby the current supplied from the bias power source 133 is supplied to the second deflection coil 120b.

In addition, the arrangement of each element (first contact, second contact, and switching member) included in the heating current switching unit 141, the bias switching unit 142, and the deflection current switching unit 143, and the fixed contacts included in each element The number of movable contacts and the like are not particularly limited, and may be appropriately determined in accordance with the circuit configuration. For example, each of the fixed contacts and the movable contacts included in each element may be one (see the bias switching unit 142 and the bias current switching unit 143 in FIG. 2 ), or two of them (refer to FIG. 2 ). The heating current switching unit 141).

The detecting unit 160 is configured to detect a driving current flowing through the first heating current circuit 136 and the second heating current circuit 144, a bias voltage applied to the first heating current circuit 136 and the second heating current circuit 144, and a first bias in the flow. The current of the coil 120a and the second deflection coil 120b. In other words, the detecting unit 160 includes the first driving current detecting unit 161a, the second driving current detecting unit 161b, the bias voltage detecting unit 162, and the first bias current detecting. The measuring unit 163a and the second deflecting current detecting unit 163b.

The first drive current detecting unit 161a and the second drive current detecting unit 161b are provided in the first heating current circuit 136 and the second heating current circuit 144, respectively. The first drive current detecting unit 161a is provided between the heating current switching unit 141 and the first transformer unit 137, for example, and the second drive current detecting unit 161b is provided, for example, in the heating current switching unit 141 and the second transformer unit 145. between. The first drive current detecting unit 161a and the second drive current detecting unit 161b can use, for example, a current transformer (CT; Current Transformer).

The bias voltage detecting unit 162 is configured to detect a bias voltage. In the present embodiment, the bias voltage detecting unit 162 is provided between the bias switching unit 142 and the first heating current circuit 136, and between the bias switching unit 142 and the second heating current circuit 144, respectively. The bias voltage detecting unit 162 can be configured to detect a voltage, for example, by a voltage dividing resistor, and specifically includes a first resistor, a second resistor connected to the first resistor and a ground potential, and a connection. a voltage detector between the first resistor and the second resistor.

The first deflection current detecting unit 163a is provided between the deflection current switching unit 143 and the first deflection coil 120a, for example, and the second deflection current detection unit 163b is provided between the deflection current switching unit 143 and the second deflection coil 120b. First deflection current detecting unit 163a and second deflection current detecting unit The 163b system can use a low resistor, a Hall element type current sensor, or the like.

Referring to Fig. 1, control unit 150 controls switching between the first state and the second state. In the present embodiment, the control unit 150 is configured to control the driving of each configuration of the power supply unit 130 and the switching unit 140 in accordance with a control signal generated by the main controller 5 of the vacuum vapor deposition device 1. Further, the control unit 150 may be configured as a part of the main controller 5 or may be configured independently. In the case of an independent configuration, the control unit 150 may be provided with a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory). It is composed of a hard computer.

The control unit 150 drives the heating current power supply 134 and the deflection power supply 133 in the first state, and sets the thyristor 135 to the driving state. Further, the switching members 141c, 142c, and 143c of the heating current switching unit 141, the bias switching unit 142, and the deflection current switching unit 143 are connected to the first contacts 141a, 142a, and 143a, respectively. Thereby, a driving current is supplied to the first filament 110a to generate a first electron beam B1, and the first electron beam B1 is biased by the first deflection coil 120a.

The control unit 150 drives the heating current power supply 134 and the deflection power supply 133 in the second state, and sets the thyristor 135 to the driving state. Further, the switching members 141c, 142c, and 143c of the heating current switching unit 141, the bias switching unit 142, and the deflection current switching unit 143 are respectively connected. To the second contacts 141b, 142b, 143b. Thereby, a drive current is supplied to the second filament 110b to generate a second electron beam B2, and the second electron beam B2 is biased by the second deflection coil 120b.

In the present embodiment, the control unit 150 is configured to monitor the driving currents flowing through the first heating current circuit 136 and the second heating current circuit 144 in accordance with the detection result of the detecting unit 160 during vapor deposition, and to flow the first deflection coil 120a. And the current of the second bias coil 120b. Specifically, the control unit 150 is configured to determine whether the first heating current circuit 136 and the second heating current circuit 144 have current according to the outputs of the first driving current detecting unit 161a and the second driving current detecting unit 161b, and according to the first The output of the current detecting unit 163a and the second deflecting current detecting unit 163b is biased to determine whether or not current flows through the first deflecting coil 120a and the second deflecting coil 120b.

FIG. 3 is a flowchart showing an example of the operation of the control unit 150. In the present operation example, a series of operations performed by the control unit 150 for switching the first state and the second state to each other (ST100) are performed in the vacuum vapor deposition apparatus 1 after the series of operations are performed. A current monitoring step (ST200) is performed during vapor deposition. Further, the switching step (ST100) includes the following ST101 to ST110, and the current monitoring step (ST200) includes the following ST201 to ST203.

First, the control unit 150 switches to each other in order to switch from the state in which one of the electron beams is irradiated to the state in which the other electron beam is irradiated. The first state and the second state (ST100). The control unit 150 periodically determines whether or not the switching control signal generated by the main controller 5 has been received (ST101). When the switching control signal is not received (NO in ST101), the reception of the switching control signal is judged again (ST101). When the control signal has been received (Yes in ST101), the control unit 150 determines whether or not the bias supply unit 132 stops supplying the bias voltage based on the output of the bias voltage detecting unit 162 (ST102). In the case where it is not stopped (NO in ST102), the processing according to the switching control signal is not performed, but the reception of the switching control signal is judged again (ST101). When the supply of the bias voltage is stopped (YES in ST102), a signal for stopping the supply of the current to the bias power supply 133 is transmitted (ST103). Thereby, both the bias supply unit 132 (bias power supply 138) and the deflection power supply 133 are stopped.

Next, the control unit 150 determines whether or not the supply of the bias power supply 133 is stopped based on the outputs of the first deflection current detecting unit 163a and the second deflection current detecting unit 163b (ST104). When the bias power supply 133 stops supplying current (YES in ST104), the switching unit 140 transmits a switching signal for selectively switching the first state and the second state (ST105). The heating current switching unit 141, the bias switching unit 142, and the deflection current switching unit 143 of the switching unit 140 that has received the switching signal switch the contacts to which the respective switching members 141c, 142c, and 143c are connected to the other contact. Thereby, the first state and the second state are switched.

On the other hand, when the bias power supply 133 does not stop supplying current (ST104, NO), the switching signal is not transmitted, but is transmitted to the power supply unit 130. Error signal (ST110). Thereby, the power supply unit 130 stops the driving of the heating current power supply 134 and sets the state in which the thyristor 135 is not driven, thereby stopping the supply of the heating current by the heating current supply unit 131.

After transmitting the switching signal to the switching unit 140, the control unit 150 transmits a signal for starting the supply of current to the deflection current switching unit 143 (ST106), and determines whether the bias power supply 133 has started to the first deflection coil 120a and the second. Any one of the deflection coils 120b supplies a current (ST107). In the case where it has already started (Yes in ST107), it is judged whether or not the bias supply unit 132 has started supplying the bias voltage to any of the first heating current circuit 136 and the second heating current circuit 144 (ST108). In the case where it has already started (ST108, YES), the information for completing the switching is output to the main controller 5 (ST109). On the other hand, when the bias current switching unit 143 does not start supplying current (NO in ST107) and the bias supply unit 132 does not start to supply the bias voltage (NO in ST108), the power supply unit 130 transmits an error signal ( ST110).

After the completion of the switching (ST109), the vapor deposition of the vacuum vapor deposition apparatus 1 is started, and the control unit 150 monitors the current path (ST200). That is, it is judged whether or not the current flows through any of the first heating current circuit 136 and the second heating current circuit 144 of the power supply unit 130 (ST201). When the current flows (YES in ST201), the control unit 150 determines whether or not the first deflection coil 120a or the second deflection coil 120b corresponding to the first heating current circuit 136 or the second heating current circuit 144 through which the current flows (whether or not the current flows) ( ST202). At current In the case of the flow (YES at ST202), the control unit 150 causes the power supply unit 130 to continue the operation, returns to ST201 again, and continues to monitor the current path (ST201).

On the other hand, in the case where none of the first heating current circuit 136 and the second heating current circuit 144 has a current flowing (ST201, NO) and corresponding to the first heating current circuit 136 or the second heating current circuit 144 When the first deflection coil 120a or the second deflection coil 120b does not flow a current (NO in ST202), since there is a possibility that the switching of the switching unit 140 is not normally performed, a switching abnormality signal is transmitted to the power supply unit 130 (ST203). . Thereby, the power supply unit 130 stops the supply of the heating current by the heating current supply unit 131.

As described above, the control unit 150 causes the switching unit 140 to switch only when the supply of the bias voltage is stopped and the supply of the bias power supply 133 is stopped. Thereby, the risk of discharge or the like in the heating current switching unit 141, the bias switching unit 142, and the bias current switching unit 143 of the switching unit 140 can be minimized, and the switching can be performed safely.

Further, the control unit 150 monitors the current path of the power supply unit 130 during vapor deposition. Thereby, not only the switching instruction to the switching unit 140 but also whether the switching is correctly performed can be confirmed. Therefore, the risk of film formation failure due to a failure of the heating current switching unit 141, the bias switching unit 142, and the bias current switching unit 143 of the switching unit 140 can be reduced.

Further, the control unit 150 can check whether or not current flows through the first deflection coil 120a and the second deflection coil 120b corresponding to the first heating current circuit 136 and the second heating current circuit 144 by monitoring the current path. Thereby, the trajectory of the switched electron beam can be surely controlled.

The electron gun apparatus 100 configured as described above is configured to generate the first electron beam B1 and the second electron beam B2 corresponding to the first evaporation material 31a and the second evaporation material 31b, respectively, and can be configured to have only one heating current. The power source 134 and a bias power source 133. Hereinafter, the effects of the present embodiment will be described by way of a comparative example.

Fig. 4 is a circuit diagram of an electron gun apparatus 400 of a comparative example of the embodiment. Similarly to the electron gun apparatus 100, the electron gun apparatus 400 is configured to alternately emit the first electron beam B1 and the second electron beam B2. The electron gun apparatus 400 includes a first filament 410a and a second filament 410b, a first heating current supply unit 431a and a second heating current supply unit 431b, a bias supply unit 432, a first deflection power source 433a, and a second deflection power source. 433b, first deflection coil 420a and second deflection coil 420b, and bias switching unit 460. The main difference from the electron gun apparatus 100 is that the electron gun apparatus 400 has a first heating current supply unit 431a and a second heating current supply unit 431b, and a first deflection power supply 433a and a second deflection power supply 433b. Since the other portions have the same configuration as that of the electron gun apparatus 100, the description thereof will be omitted or simplified.

The first heating current supply unit 431a and the second heating current supply unit 431b are provided with heating current power sources 434a and 434b, respectively, and are connected to the first filament 410a and the second filament 410b. The bias switching unit 460 is configured in the same manner as the bias switching unit 142 of the electron gun apparatus 100. That is, the bias supply unit 432 and the first heating current supply unit 431a are connected in the first state in which the first electron beam B1 is emitted, and the bias supply unit 432 and the second heating are connected in the second state in which the second electron beam B2 is emitted. Current supply unit 431b.

In the electron gun apparatus 400, one of the heating current power supply 434a and the first deflection power supply 433a is driven in the first state, and the other heating current power supply 434b and the second deflection power supply 433b are stopped. In the second state, it is the opposite state to the first state. Therefore, even in the vapor deposition, one of the heating current power supply and the deflection power supply must be stopped, resulting in an excess of equipment. Excessive equipment will not only increase the cost of equipment introduction, but also increase the maintenance cost of the equipment and increase the installation space of the equipment.

On the other hand, the electron gun apparatus 100 of the present embodiment can be configured to include only one heating current supply unit 131 (heating current power supply 134) and deflection power supply 133 by the switching unit 140. Therefore, even in the case where the first electron beam B1 and the second electron beam B2 are alternately emitted, the device can be simplified and the problem of equipment cost and installation space can be solved.

Furthermore, the electron gun device 100 can apply a bias voltage belonging to a high voltage. The path of the heating current is switched by the heating current switching unit 141. When the heating current switching unit 141 is loaded with a high voltage, there is a possibility that the contact is melted or the like due to an arc discharge. Therefore, according to the above configuration, it is possible to prevent the failure of the heating current switching unit such as the contact melting, and the heating current switching unit 141 can be constituted by a relatively simple relay or electromagnetic contactor.

In addition, FIG. 5 is a schematic view showing a vacuum vapor deposition apparatus of a reference example of the present embodiment. As shown in FIG. 5, the vacuum vapor deposition apparatus 6 is provided with two chambers 7, 8, a first evaporation material holding portion 9a, a second evaporation material holding portion 9b, and an electron gun device 600. The first evaporation material holding portion 9a holding the first evaporation material 91a and the second evaporation material holding portion 9b holding the second evaporation material 91b are disposed in the two chambers 7, 8. The electron gun apparatus 600 has the same configuration as the electron gun apparatus 100, and selectively switches between a first state in which the first electron beam B1 is emitted from the chamber 7 and a second state in which the second electron beam B2 is emitted from the chamber 8. status. In addition, in FIG. 5, the support part, the main control part, etc. are abbreviate|omitted.

Even with the above configuration, the electron beam can be irradiated to the evaporation material disposed in the desired chamber. On the other hand, in the case of adopting the above configuration, assuming that the control unit or the switching unit generates a failure and irradiates an electron beam to a chamber different from the commanded chamber, there is a state in which the vacuum is not sufficiently extracted or The chamber in which the evaporation material is not ready is irradiated with the electron beam.

Therefore, according to the vacuum vapor deposition apparatus 1 of the present embodiment, since only one chamber 2 is provided, the first electron beam B1 and the second electron can be irradiated in the chamber 2 in an appropriate environment for preparing for vapor deposition. Any of bundles B2. Thereby, it is possible to create a structure with higher safety.

<Second embodiment>

Fig. 6 is a circuit diagram of an electron gun apparatus according to a second embodiment of the present invention. Similarly to the first embodiment, the electron gun apparatus 200 includes a first filament 210a, a second filament 210b, a first deflection coil 220a, a second deflection coil 220b, a power supply unit 230, a switching unit 240, a control unit 250, and a connection unit. 260. The electron gun apparatus 200 differs from the electron gun apparatus 100 of the first embodiment in that the switching unit 240 is configured to be detachable from the power supply unit 230 via the connection unit 260. Hereinafter, the same portions as those of the first embodiment will be omitted or simplified.

Similarly to the first embodiment, the first filament 210a generates the first electron beam B1. The first filament 210a is connected to the first heating current circuit 236 of the power supply unit 230. Likewise, the second filament 210b produces a second electron beam B2. The second filament 210b is connected to the second heating current circuit 244 of the switching unit 240.

Similarly to the first embodiment, the first deflection coil 220a functions as a first deflector to deflect the first electron beam B1. Again, with the first real Similarly, the second deflecting coil 220b acts as a second deflector to deflect the second electron beam B2. Any one of the first deflection coil 220a and the second deflection coil 220b is connected to the deflection power supply 233 via the deflection current switching unit 243 of the switching unit 240.

The power supply unit 230 includes a heating current supply unit 231, a bias supply unit 232, and a deflection power supply (bias current supply unit) 233.

The heating current supply unit 231 supplies a heating current for generating an electron beam by any of the first filament 210a and the second filament 210b, and includes a heating current source 234 and a thyristor 235 as in the first embodiment. And a first heating current circuit 236. Similarly to the first embodiment, the first heating current circuit 236 includes a first transformer unit 237 that converts a voltage value of the heating current. The bias supply unit 232 includes a bias power supply 238 and a resistor 239, and applies a bias voltage to the heating current. The bias power source 233 supplies a current to any of the first deflection coil 220a and the second deflection coil 220b.

The switching unit 240 is configured to selectively switch between a first state for supplying a driving current to the first filament 210a and a second state for supplying a driving current to the second filament 210b. Similarly to the first embodiment, the switching unit 240 includes a heating current switching unit 241, a bias switching unit 242, a deflection current switching unit 243, and a second heating current circuit 244.

Similarly to the first embodiment, the second heating current circuit 244 is connected to the second filament 210b. The second heating current circuit 244 is a second voltage changing portion 245 including a voltage value of the switchable heating current.

The heating current switching unit 241 connects the heating current power supply 234 and the first heating current circuit 236 in the first state, and connects the heating current power supply 234 and the second heating current circuit 244 in the second state. Similarly to the first embodiment, the heating current switching unit 241 includes a first contact 241a, a second contact 241b, and a switching member 241c.

The bias switching unit 242 connects the bias supply unit 232 and the first heating current circuit 236 in the first state, and connects the bias supply unit 232 and the second heating current circuit 244 in the second state. Similarly to the first embodiment, the bias switching unit 242 includes a first contact 242a, a second contact 242b, and a switching member 242c.

The deflection current switching unit 243 connects the deflection power supply 233 and the first deflection coil 220a in the first state, and connects the deflection power supply 233 and the second deflection coil 220b in the second state. Similarly to the first embodiment, the deflection current switching unit 243 includes a first contact 243a, a second contact 243b, and a switching member 243c.

The control unit 250 controls switching between the first state and the second state. In the present embodiment, the control unit 250 is configured to be selectively switchable to switching. The two-source mode when the mode is connected to the second power supply unit 280 as will be described later. In the electron gun apparatus 200 having the switching unit 240, the switching mode is selected. In the switching mode, any one of the first electron beam B1 and the second electron beam B2 is controlled to be emitted, and the same operation as in the first embodiment can be performed. In this case, the current flowing through the first deflection coil 220a and the second deflection coil 220b and the currents of the first heating current circuit 236 and the second heating current circuit 244 may be monitored.

Further, although not shown, the electron gun apparatus 200 may include a detecting unit having the same configuration as that of the first embodiment.

Next, the configuration of the connecting portion 260 will be described.

Fig. 7 is a circuit diagram showing the main part of the configuration and connection relationship of the connecting portion 260. FIG. 7 shows only a part of the circuit diagram of FIG. 6 in order to show the connection relationship between the connection portion 260 and the respective components, and omits, for example, the second transformer unit 237, the thyristor 235, the second heating current circuit 244, and the like. In the present embodiment, the connection portion 260 includes a power supply unit side terminal portion 261 connected to the power supply unit 230 and a switching unit side terminal portion 262 connected to the switching unit 240.

In the present embodiment, the power source unit side terminal portion 261 includes a first terminal 261a, a second terminal 261b, a third terminal 261c, a fourth terminal 261d, a fifth terminal 261e, and a sixth terminal 261f. In addition, the switching unit The side terminal portion 262 also includes a first terminal 262a, a second terminal 262b, a third terminal 262c, a fourth terminal 262d, a fifth terminal 262e, and a sixth terminal 262f. Between the first terminal 261a and the first terminal 262a, between the second terminal 261b and the second terminal 262b, between the third terminal 261c and the third terminal 262c, between the fourth terminal 261d and the fourth terminal 262d, and the fifth The terminal 261e and the fifth terminal 262e and the sixth terminal 261f and the sixth terminal 262f are configured to be connectable to each other. The first to sixth terminals 261a to 261f and the first to sixth terminals 262a to 262f may be formed of a spring terminal or the like, or the corresponding terminals may be connected by screws or the like.

The first terminal 261a of the power supply unit side terminal portion 261 is connected to the heating current power supply 234. The first terminal 262a of the switching unit side terminal portion 262 is connected to the switching member 241c of the heating current switching portion 241.

The second terminal 261b of the power supply unit side terminal portion 261 is connected to the first heating current circuit 236. The second terminal 262b of the switching unit side terminal portion 262 is connected to the first contact 241a of the heating current switching portion 241.

The third terminal 261c of the power supply unit side terminal portion 261 is connected to the first heating current circuit 236. The third terminal 262c of the switching unit side terminal portion 262 is connected to the first contact 242a of the bias switching portion 242.

The fourth terminal 261d of the power supply unit side terminal portion 261 is connected to the bias supply portion 232. The fourth terminal 262d of the switching unit side terminal portion 262 is connected The switching member 242c is connected to the bias switching unit 242.

The fifth terminal 261e of the power supply unit side terminal portion 261 is connected to the deflection power supply 233. The fifth terminal 262e of the switching unit side terminal portion 262 is connected to the switching member 243c that is biased toward the current switching portion 243.

The sixth terminal 261f of the power supply unit side terminal portion 261 is connected to the first deflection coil 220a. The sixth terminal 262f of the switching unit side terminal portion 262 is connected to the first contact 243a of the bias current switching portion 243.

The first to sixth terminals 261a to 261f of the power supply unit side terminal portion 261 may be configured to be exposed to, for example, a part of a casing (not shown) of the power supply unit 230. Similarly, the first to sixth terminals 262a to 262f of the switching unit side terminal portion 262 may be arranged to be exposed, for example, to a part of the housing (not shown) of the switching unit 240. In this case, the first to sixth terminals 261a to 261f of the power source unit side terminal portion 261 are disposed to correspond to the first to sixth terminals 262a to 262f of the switching unit side terminal portion 262.

The switching unit 240 can be detachably connected to the power supply unit 230 by the connection portion 260 having the above configuration. Specifically, for example, the switching unit side terminal portion 262 is inserted into the power source unit side terminal portion 261, thereby connecting the first terminal 261a to the sixth terminal 261f of the power source unit side terminal portion 261 and the first of the switching unit side terminal portion 262 Terminal 262a to sixth terminal 262f.

Further, a circuit equivalent to that of the first embodiment can be constructed by connecting the power supply unit 230 and the switching unit 240. As a result, the present embodiment contributes to simplification of the apparatus as in the first embodiment.

Further, the connection unit 260 can separately process the power supply unit 230 and the switching unit 240 at the time of storage or transportation. Thereby, the space during storage or transportation can be reduced, and the handling property can be improved.

Furthermore, the power supply unit 230 may also have a connection switching unit 270. The connection switching unit 270 can switch the power source unit side terminal portion 261 to a switching unit connection state in which the power source unit side terminal portion 261 and the switching unit side terminal portion 262 can be connected, and the heating current supply portion 231 and the first filament 210a are not switched. Unit 240 constitutes a closed loop state of the closed loop. 6 and 7 show a state in which the power supply unit side terminal portion 261 is switched to the switching unit connection state. The specific configuration of the connection switching unit 270 will be described later.

Alternatively, the connection switching unit 270 may be switched to the closed circuit state, and instead of the switching unit 240, the second power supply unit 280 may be connected to the power supply unit 230 to constitute the electron gun apparatus 300.

[Reference example]

Fig. 8 is a circuit diagram of an electron gun apparatus 300 of a reference example of the embodiment. Figure. The electron gun apparatus 300 is provided with a first power source unit 230 and a second power source unit 280. In addition, since the first power supply unit 230 has the same configuration as the power supply unit 230 of the electron gun apparatus 200, the same reference numerals as those of the power supply unit 230 will be used.

In the present reference example, the first power supply unit 230 is configured to be connected to the first filament 210a and to supply a driving current for generating the first electron beam B1. On the other hand, the second power supply unit 280 is configured to be connected to the second filament 210b and to supply a drive current for generating the second electron beam B2. That is, the electron gun apparatus 300 is configured to emit the first electron beam B1 and the second electron beam B2 alternately or simultaneously.

In the present reference example, the heating current supply unit 231 of the first power source unit 230 supplies a heating current for causing the first filament 210a to generate the first electron beam B1. The bias power source 233 supplies electric power to the first deflection coil 220a.

The bias supply unit 232 applies a bias voltage to the heating current. As will be described later, the bias supply unit 232 applies a bias voltage to at least one of the first heating current circuit 236 of the first power supply unit 230 and the second heating current circuit 286 of the second power supply unit 280. The bias supply portion 232 is connected to the bias connection portion 282 of the second power supply unit 280 as will be described later.

As shown in FIGS. 7 and 8, the connection switching unit 270 includes a first connection switching unit 271 and a second connection switching unit 272.

The first connection switching unit 271 is configured to be switchable between the first terminal 261a and the second terminal 261b. Specifically, in the switching unit connection state, the first terminal 261a and the second terminal 261b are disposed so as to be exposed to a part of the housing (not shown) of the power supply unit 230 (see FIGS. 6 and 7). On the other hand, in the closed circuit state, the first terminal 261a and the second terminal 261b are connected to each other (see FIG. 8). The configuration of the first connection switching unit 271 is not particularly limited, and for example, a biasing member (not shown) that is connected to the first terminal 261a and the second terminal 261b may be provided. In this case, the biasing member may bias the first terminal 261a and the second terminal 261b in the closed circuit state, but is switched to the switching state as the switching unit side terminal portion 262 is inserted to release the biasing state. Unit connection status.

The second connection switching unit 272 is configured to be switchable between the fifth terminal 261e and the sixth terminal 261f. Specifically, in the switching unit connection state, the fifth terminal 261e and the sixth terminal 261f are disposed so as to be exposed to a part of the housing (not shown) of the power supply unit 230 (see FIGS. 6 and 7). On the other hand, in the closed circuit state, the fifth terminal 261e and the sixth terminal 261f are connected to each other (see FIG. 8). The specific configuration of the second connection switching unit 272 is not particularly limited, and may be configured in the same manner as the first connection switching unit 271, for example.

When the second power supply unit 280 is connected, the connection switching unit 270 switches the power supply unit side terminal unit 261 (see FIGS. 6 and 7 ) of the connection unit 260 to Closed loop state. Therefore, the first power supply unit 230 is configured to include two closed circuits, wherein one closed circuit includes a heating current power supply 234, a first voltage changing portion 237, and a first filament 210a, and the other closed circuit includes a bias. The power source 233 and the deflection coil 220a are used.

The second power supply unit 280 includes a heating current supply unit 281, a bias connection unit 282, and a deflection power supply 283.

The heating current supply unit 281 includes, for example, a heating current power supply 284, a thyristor 285, and a second heating current circuit 286, and supplies the second filament 210b to generate the second electron beam B2. Heating current. The second heating current circuit 286 includes a second pressure changing portion 287. The bias power source 283 supplies electric power to the second deflecting coil 220b.

The bias connection portion 282 is configured to be connectable to the bias supply unit 232 and at least one of the first heating current circuit 236 and the second heating current circuit 286. The bias connection portion 282 includes, for example, a first contact 282a, a second contact 282b, a first connection terminal 282c, a second connection terminal 282d, a first switching member 282e, and a second switching member 282f.

The first contact 282a is configured to be connectable to the first heating current circuit 236 via the first connection terminal 282c. The first connection terminal 282c is configured to be connectable to the third terminal 261c of the power supply unit side terminal portion 261.

The second contact 282b is connected to the second heating current circuit 286. The second connection terminal 282d is configured to be connectable to the fourth terminal 261d of the power supply unit side terminal portion 261. The first switching member 282e and the second switching member 282f are both connected to the second connection terminal 282d.

The first switching member 282e has a closed state in which it is connected to the first contact 282a and an open state in which it is not connected to the first contact 282a. In the closed state, the bias supply portion 232 is connected to the first contact 282a, and the bias voltage is applied to the heating current of the first heating current circuit 236.

The second switching member 282f has a closed state in which it is connected to the second contact 282b and an open state in which it is not connected to the second contact 282b. In the closed state, the bias supply portion 232 is connected to the second contact 282b, and the bias voltage is applied to the heating current of the second heating current circuit 286.

In the present reference example, in the case where both the first switching member 282e and the second switching member 282f are in the closed state, the bias voltage is applied to the heating currents of both the first heating current circuit 236 and the second heating current circuit 286. . In this case, the total of the voltage values of the bias voltages applied to each of the first heating current circuit 236 and the second heating current circuit 286 may be within the rated voltage range of the bias supply unit 232.

With the above configuration, the second power supply unit 280 is configured to include two The closed circuit includes a heating current source 284, a second transformer unit 287, and a second filament 210b, and the other closed circuit includes a bias power source 283 and a deflection coil 220b.

As described above, the control unit 250 selects the two-source mode. In the two-source mode, the control unit 250 is configured to switch between a first state for supplying a drive current to the first filament 210a, a second state for supplying a drive current to the second filament 210b, and The drive current is supplied to the third state of both the first filament 210a and the second filament 210b.

In the first state, the control unit 250 drives the heating current power source 234 and the deflection power source 233, and connects the first switching member 282e of the bias connection portion 282 to the first contact 282a. Thereby, the first electron beam B1 is emitted by the driving current supplied to the first filament 210a, and the first electron beam B1 is biased by the first deflection coil 220a.

In the second state, the control unit 250 drives the heating current power supply 284 and the deflection power supply 283, and connects the second switching member 282f of the bias connection portion 282 to the second contact 282b. Thereby, the second electron beam B2 is emitted by the driving current supplied to the second filament 210b, and the second electron beam B2 is biased by the second deflection coil 220b.

In the third state, the control unit 250 causes the heating current power source 234, the heating current power source 284, the first bias power source 233, and the second bias. The power source 283 is driven to connect the first switching member 282e of the bias connection portion 282 with the first contact 282a and the second switching member 282f and the second contact 282b, respectively. Thereby, the first electron beam B1 and the second electron beam B2 are emitted by the driving current supplied to the first filament 210a and the second filament 210b, and are respectively made first by the first deflection coil 220a and the second deflection coil 220b. The electron beam B1 and the second electron beam B2 are deflected.

As described above, according to the present embodiment, the first power supply unit 230 can be selectively connected to any one of the switching unit 240 and the second power supply unit 280. In other words, the electron gun device 200 having the switching unit 240 can generate the first electron beam B1 and the second electron beam B2 in an interactive manner, and the electron gun device 300 including the second power source unit 280 can simultaneously The case where the first electron beam B1 and the second electron beam B2 are emitted. That is, the first power source 230 of the electron gun apparatus 200 and the electron gun apparatus 300 can be shared to improve productivity, and can easily respond to requests from any of the electron gun apparatus 200 and the electron gun apparatus 300. In addition, the space for inventory can be reduced.

Furthermore, the control unit 250 can also be used in the electronic gun devices 200 and 300 by the above-described mode switching, thereby contributing to further improvement in productivity and reduction in inventory space.

<Third embodiment>

Fig. 9 is a circuit diagram of an electron gun apparatus according to a third embodiment of the present invention.

The heating current switching unit 141 and the deflection current switching unit described above The 143 series switches the current of a lower voltage, so an inexpensive relay or an electromagnetic contactor can be used. On the other hand, in the case of switching the bias voltage, since a vacuum relay or the like corresponding to a high voltage is used, there is a tendency that the cost becomes high.

Therefore, the present inventors focused on the generation of an electron beam after the bias voltage is superimposed on the heating current, and the electron gun device 500 is constructed, and the electron gun device 500 is configured such that the bias voltage is constantly connected to both of the heating current circuits. Instead of switching the bias voltage, the filament for emitting the electron beam is switched by switching of the heating current.

In other words, in addition to the above-described problems, another object of the present invention is to provide a device failure that can prevent the electron beam accompanying the switching of the electron gun apparatus 500 at a lower cost and more reliably.

That is, the electron gun apparatus 500 is characterized in that the first filament 110a, the second filament 110b, the first deflection coil 120a, the second deflection coil 120b, the power supply unit 530, the switching unit 540, the control unit 550, and the detection unit 160 are provided. And the switching unit 540 does not have a bias switching portion. The same components as those of the above-described first embodiment are denoted by the same reference numerals, and their description will be omitted.

Further, in the present embodiment, the electron gun apparatus 500 may be configured to emit either of the first electron beam and the second electron beam in one chamber as shown in FIG.

The power unit 530 is supplied to make the first filament 110a and the second filament Any one of 110b generates a drive current of the first electron beam B1 or the second electron beam B2. As shown in FIG. 9, the power supply unit 530 includes a heating current supply unit 131, a bias supply unit 532, and a deflection power supply (bias current supply unit) 133.

The bias supply unit 532 applies a bias voltage to the heating current. In the present embodiment, the bias supply unit 532 is connected to both the first heating current circuit 136 and the second heating current circuit 144. In the present embodiment, the bias supply unit 532 includes a bias power supply 538 connected to both the first heating current circuit 136 and the second heating current circuit 144, and a resistor 539. Since the bias power supply 538 and the resistor 539 have the same configuration as the bias power supply 138 and the resistor 139, the description thereof will be omitted.

The switching unit 540 is configured to selectively switch between the first state and the second state, the first state is for supplying a driving current to the first filament 110a, and the second state is for supplying the driving current to the second Filament 110b. That is, the switching unit 540 is configured to selectively switch the supply of the heating current to the first filament 110a and the second filament 110b. In the present embodiment, the switching unit 540 includes the heating current switching unit 141, the deflection current switching unit 143, and the second heating current circuit 144, but does not include the bias switching unit. Further, similarly to the heating current switching unit 141, the deflection current switching unit 143 can be disposed on the primary side of the first transformation unit 137 and the second transformation unit 145.

Further, in the present embodiment, a resistance value interlock (not shown) for detecting a coil failure may be provided in the vicinity of the first deflection coil 120a and the second deflection coil 120b, respectively. The resistor value chain can detect a poor resistance by monitoring the voltage and current biased toward the coil. In general, in the deflection coil, the deterioration of the coil winding is accelerated due to long-term use, and an interlayer short circuit between the windings is generated, and a coil failure that does not reach a predetermined magnetic field is generated. The resistance value chain can detect such coil failure by detecting an abnormal resistance value.

The detecting unit 160 is configured to detect a driving current flowing through the first heating current circuit 136 and the second heating current circuit 144, a bias voltage applied to the first heating current circuit 136 and the second heating current circuit 144, and a circulating voltage The current is biased by the first bias coil 120a and the second bias coil 120b. In other words, the detecting unit 160 includes the first driving current detecting unit 161a, the second driving current detecting unit 161b, the bias voltage detecting unit 162, the first deflecting current detecting unit 163a, and the second deflecting current detecting unit 163b. In the present embodiment, the bias voltage detecting unit 162 is provided between at least one of the bias supply unit 532 and the first heating current circuit 136 and between the bias supply unit 532 and the second heating current circuit 144.

The control unit 550 controls switching between the first state and the second state. Further, the control unit 550 drives the heating current power supply 134 and the deflection power supply 133 in the first state, and sets the thyristor 135 to the driving state. Further, switching between the heating current switching unit 141 and the deflection current switching unit 143 is performed. The members 141c, 143c are connected to the first contacts 141a, 143a, respectively. Thereby, a driving current is supplied to the first filament 110a to generate a first electron beam B1, and the first electron beam B1 is biased by the first deflection coil 120a.

The control unit 550 drives the heating current power supply 134 and the deflection power supply 133 in the second state, and sets the thyristor 135 to the driving state. Further, the switching members 141c and 143c of the heating current switching unit 141 and the deflection current switching unit 143 are connected to the second contacts 141b and 143b, respectively. Thereby, a drive current is supplied to the second filament 110b to generate a second electron beam B2, and the second electron beam B2 is biased by the second deflection coil 120b.

In the present embodiment, the bias current supply unit 532 supplies a bias voltage to the heating current regardless of either of the first state and the second state. Thereby, even if the bias switching unit is not provided, the driving current can be supplied to any of the first filament 110a and the second filament 110b by switching in the heating current switching unit 141.

In the present embodiment, the control unit 550 is configured to monitor the driving current flowing through the first heating current circuit 136 and the second heating current circuit 144 in accordance with the detection result of the detecting unit 160, and apply it to the first heating current circuit 136. The bias voltage of the second heating current circuit 144 and the current flowing through the first deflection coil 120a and the second deflection coil 120b.

Next, a switching procedure of the control unit 550 will be described (refer to ST100 of FIG. 3). An example of an action. In the switching step of this operation example, there is no switching step of the bias voltage. Further, the above-described current monitoring step can apply ST201 to ST203 shown in FIG.

First, the control unit 550 periodically determines whether or not the switching control signal generated by the main controller (refer to FIG. 1) has been received. In the case where the switching control signal has been received, the control unit 550 transmits a signal for stopping the supply of the bias voltage to the bias supply unit 532, and transmits a signal for stopping the supply of the current to the heating current power supply 134. . Next, the control unit 550 determines whether or not the heating current power supply 134 stops supplying current based on the outputs of the first drive current detecting unit 161a and the second drive current detecting unit 161b. In the case where it is not stopped, the control unit 550 transmits an error signal to the power supply unit 530. Thereby, the power supply unit 530 stops the driving of the heating current power supply 134 and sets the thyristor 135 to the undriven state, thereby stopping the supply of the heating current from the heating current supply unit 131.

When the heating current supply 134 stops supplying current, the control unit 550 determines whether or not the bias voltage is being applied in accordance with the output of the bias voltage detecting unit 162.

When it is determined that the bias voltage is not applied, a signal for stopping the supply of the bias power supply 133 is transmitted, and the bias power supply 133 is determined based on the outputs of the first bias current detecting unit 163a and the second deflecting current detecting unit 163b. Whether to stop the supply of current. The supply is stopped at the bias power source 133 In the case of the current, the control unit 550 transmits a switching signal for switching the contact to which the switching member 143c is connected to the other contact to the deflection current switching unit 143. On the other hand, when the bias power supply 133 does not stop supplying current, the switching signal is not transmitted but the power supply unit 530 transmits an error signal.

After transmitting the switching signal, the control unit 550 transmits a signal for starting the supply of the current to the deflection power supply 133, and sets the current value of the deflection power supply 133 to a predetermined value. Next, the control unit 550 determines whether or not the pair of deflection power supply 133 is one of the first deflection coil 120a and the second deflection coil 120b, based on the outputs of the first deflection current detection unit 163a and the second deflection current detection unit 163b. The desired bias coil supplies current. When it is determined that the current is not supplied to the desired deflection coil, the control unit 550 transmits an error signal to the power supply unit 530.

In this way, since the switching of the deflection current in the present operation example is performed in a state where the bias current is not supplied, it is possible to prevent the contact of the bias current switching unit 143 from melting or the like. Further, the switching of the bias current is performed in a state where the drive current is not supplied, and after the drive current is switched, the first deflection current detecting unit 163a and the second deflection current detecting unit 163b can determine whether or not the desired current is correct. The bias coil supplies current. Thereby, the electron beam can be prevented from being emitted in an unexpected direction, and the electron gun apparatus 500 can be operated more safely.

When it is determined that the current is not supplied to the desired deflection coil, the control unit 550 determines whether or not the heating current power supply 134 has stopped, and judges When it is not driven, it is further determined whether or not the heating current power supply 134 continues to stop supplying current based on the outputs of the first drive current detecting unit 161a and the second drive current detecting unit 161b. In the case where it is not stopped, the control unit 550 transmits an error signal to the power supply unit 530.

In the case of stopping, the control unit 550 transmits a switching signal for switching the contact to which the switching member 141c is connected to the other contact to the heating current switching unit 141, and sets the current value of the heating current power supply 134 to a predetermined value. value. Thereafter, the control unit 550 determines whether or not the heating of the desired circuit in the first heating current circuit 136 and the second heating current circuit 144 is being supplied based on the outputs of the first driving current detecting unit 161a and the second driving current detecting unit 161b. Current. In the case where it is not supplied, an error signal is transmitted to the power supply unit 530.

In this way, since the switching of the heating current in the present operation example can be performed without supplying the heating current, it is possible to prevent defects such as contact melting of the heating current switching unit 141. Further, since the switching system can be performed after the bias current is switched to the desired deflection coil, it is possible to prevent the electron beam from being emitted in an unintended direction after the heating current is supplied, and the electron gun apparatus 500 can be operated more safely.

In the case where the heating current is supplied to the desired heating current circuit, the control unit 550 transmits a signal to the bias supply unit 532 to start driving. Next, the control unit 550 determines whether or not the bias voltage is applied based on the output of the bias voltage detecting unit 162. Judging that there is a bias voltage applied In the case, the switch is ended and this information is output to the main controller.

As described above, according to the present embodiment, since the bias supply unit 532 is connected to both the first heating current circuit 136 and the second heating current circuit 144, it is possible to switch the heating current switching unit 141 without switching the bias voltage. Switching the filament used to emit the electron beam. Thereby, it is possible to provide an electron gun apparatus 500 which can be constructed at a lower cost without using a means for switching between high voltages.

Further, since the bias switching portion is not provided, the risk of arc discharge in the bias switching portion and contact melting accompanying the arc discharge can be eliminated.

Further, in the present embodiment, any one of the first electron beam and the second electron beam may be emitted in one chamber. Therefore, it is possible to emit an electron beam in a chamber in an appropriate environment in which the preparation for vapor deposition is prepared, and it is possible to provide a structure with higher safety.

In addition, when the constant current control is performed by the bias power supply 133, and the bias current switching unit 143 is switched in the energized state, arc discharge is generated and the energization failure occurs. Therefore, according to the present embodiment, the control unit 550 can determine whether or not the bias power supply 133 stops supplying current based on the outputs of the first deflection current detecting unit 163a and the second deflection current detecting unit 163b. Thereby, switching of the deflection current switching unit 143 in the energized state can be prevented, and contact failure due to the deflection current switching unit 143 such as arc discharge can be prevented.

Further, when the deflection current switching unit 143 is switched in the energization state, the resistance value of the current circuit biased at the moment of switching becomes abnormally high. Therefore, as described above, the resistance value chain is provided in the vicinity of the first deflection coil 120a and the second deflection coil 120b, and the resistance value chain detector detects the abnormal value and determines that the coil is defective. Therefore, according to the present embodiment, it is possible to prevent such erroneous determination by determining whether or not the bias power supply unit 133 stops supplying current after performing the switching operation of the bias current switching unit 143.

Further, according to the present embodiment, the control unit 550 can check whether the output is in an appropriate energization state by referring to the output of the detecting unit 160 after switching between the bias current switching unit 143 and the heating current switching unit 141. Thereby, even if there is a mechanical contact failure in the deflection current switching unit 143 and the heating current switching unit 141, it is possible to immediately respond. Therefore, it is possible to prevent an unexpected electron beam from being generated, and it is possible to provide the electron gun device 500 having higher safety.

Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and various changes can be made based on the technical idea of the present invention. Further, the first to third embodiments described above may be combined and executed as long as no conflict occurs.

In the above embodiments, the description has been made with reference to the circuit diagram, but various configurations equivalent to the circuit diagram can be employed.

In the above embodiment, the first heating current circuit may also be configured. And the second heating current circuit does not have a configuration of the first transformer unit and the second transformer unit. In this case, as long as the heating current switching unit can receive a high voltage of the bias voltage, the bias power supply of the bias supply unit can be connected between, for example, the heating current switching unit and the heating current power source.

Although the heating current supply unit has a thyristor, it may not be provided, or may have other elements as needed. Further, the deflection current supply unit may have a bias power source, a thyristor or the like.

The first drive current detecting unit 161a and the second drive current detecting unit 161b are provided between the heating current switching unit 141 and the first pressure changing unit 137 and the second pressure changing unit 145, as shown in FIGS. 2 and 9 . They may be provided on the high voltage (secondary) side of the first transformer unit 137 and the second transformer unit 145, for example.

In the second embodiment described above, the connection switching unit 270 is described, but it may be configured not.

1‧‧‧Vacuum evaporation device

2‧‧‧ chamber

3a‧‧‧First Evaporative Material Holding Department

3b‧‧‧Second Evaporation Material Holding Department

4‧‧‧Support

5‧‧‧Master controller

31a‧‧‧First evaporation material

31b‧‧‧Second evaporation material

100‧‧‧Electronic gun device

110a‧‧‧First filament

110b‧‧‧second filament

120a‧‧‧First deflection coil (first deflector)

120b‧‧‧second deflection coil (second deflector)

130‧‧‧Power unit

140‧‧‧Switch unit

150‧‧‧Control Department

B1‧‧‧First electron beam

B2‧‧‧second electron beam

W‧‧‧Substrate

Claims (11)

An electron gun device is provided with: a first filament for generating a first electron beam; a second filament for generating a second electron beam; and a power supply unit having: a heating current supply portion for supplying the first And a bias current supply unit applies a bias current to the heating current; and the switching unit is configured to selectively switch the first state and the first a second state, the first state is for supplying a driving current obtained by applying the bias voltage to the heating current to the first filament, and the second state is for supplying the driving current to the second filament; And a control unit that controls switching between the first state and the second state. The electron gun apparatus according to claim 1, wherein the heating current supply unit includes: a heating current power source; and a first heating current circuit connected to the first filament; and the switching unit is provided with: a second heating a current circuit connected to the second filament; and a heating current switching unit that connects the heating current power source and the first heating current circuit in the first state, and connects the heating current power source and the second state in the second state The aforementioned second heating current circuit. The electron gun apparatus according to claim 2, wherein the switching unit includes a bias switching unit that connects the bias supply unit and the first heating current circuit in the first state, and is connected in the second state. The bias supply unit and the second heating current circuit. The electron gun apparatus according to claim 2 or 3, wherein the first heating current circuit includes: a first transformer unit that converts a voltage value of the heating current; and the second heating current circuit includes: The second transformer unit is a voltage value that can convert the aforementioned heating current. The electron gun apparatus according to claim 2, wherein the bias supply unit is connected to both the first heating current circuit and the second heating current circuit. The electron gun apparatus according to claim 2, wherein the control unit determines whether the drive current is supplied to any one of the first heating current circuit and the second heating current circuit, and the driving current is not When supplied to either one, the heating current is stopped by the power supply to supply the heating current. The electron gun apparatus according to any one of claims 1 to 3, wherein the control unit determines whether or not the bias voltage is applied to the heating current by the bias supply unit, and when the bias voltage is not applied Switching the aforementioned first state to the aforementioned second state. The electron gun apparatus according to any one of claims 1 to 3, further comprising: a first deflector for biasing the first electron beam; and a second deflector for biasing the second electron beam; the power supply unit further comprising: a bias current supply portion for the first deflector And supplying the current to any one of the second deflectors; the switching unit includes: a bias current switching unit that connects the deflection current supply unit and the first deflector in the first state, and connects in the second state The bias current supply unit and the second deflector. The electron gun apparatus according to claim 8, wherein the control unit determines whether or not current is supplied to one of the first deflector and the second deflector by the bias current supply unit, and is not in use The first state and the second state are switched when one of the currents is supplied. The electron gun apparatus according to any one of claims 1 to 3, further comprising: a connecting portion that detachably connects the power source unit and the switching unit. A vacuum evaporation apparatus comprising: a chamber that is maintained in a vacuum; a support portion disposed in the chamber for supporting a substrate; and a first evaporation material holding portion opposite to the support portion Disposed in the foregoing chamber and maintained at a ground potential for holding the first evaporation material; The second evaporation material holding portion is disposed in the chamber so as to face the support portion, and is maintained at a ground potential for holding the second evaporation material; and the electron gun device; the electron gun device is provided with: a filament for emitting a first electron beam to the first evaporation material; a second filament for emitting a second electron beam to the second evaporation material; and a power supply unit having a heating current supply portion for supplying a heating current for generating an electron beam by any one of the first filament and the second filament; and a bias supply unit that applies a bias voltage to the heating current; and the switching unit is configured to selectively switch the second a first state for supplying a driving current obtained by applying the bias voltage to the heating current to the first filament, and a second state for supplying the driving current to the foregoing a second filament; and a control unit that controls switching between the first state and the second state.