TW201521685A - Scintillator material, radiation detector, and radiographic examination device - Google Patents

Scintillator material, radiation detector, and radiographic examination device Download PDF

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TW201521685A
TW201521685A TW103130565A TW103130565A TW201521685A TW 201521685 A TW201521685 A TW 201521685A TW 103130565 A TW103130565 A TW 103130565A TW 103130565 A TW103130565 A TW 103130565A TW 201521685 A TW201521685 A TW 201521685A
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light
scintillator
scintillator material
wavelength
lanthanum
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Masanori Ikari
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Shinetsu Chemical Co
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    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/778Borates
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
    • G21K2004/06Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a phosphor layer

Abstract

This invention provides a scintillator material that comprises either a light-transmitting ceramic consisting primarily of a complex oxide that can be represented by formula (1) or a single crystal of such a complex oxide. When excited by X-rays and/or gamma rays, said scintillator material emits scintillation light having a peak emission wavelength that is further towards the long-wavelength end of the visible-light region than the peak emission wavelengths of existing scintillator materials. This scintillator material also has a high transmittance with respect to the aforementioned scintillation light, has a short decay time, and can be manufactured by heat-treating, at a temperature less than or equal to 1,800 DEG C, a complex oxide having a comparatively simple composition, reducing manufacturing costs. (1) (TbxR1-x-yCey)2B2O7 (In formula (1), 0.2 ≤ x < 1, 0.00001 ≤ y ≤ 0.01, and x+y ≤ 1; R represents one or more rare earth elements selected from among the group consisting of yttrium, gadolinium, lutetium, lanthanum, holmium, thulium, europium, dysprosium, and praseodymium; and B represents one or more elements selected from among the group consisting of titanium, tin, hafnium, silicon, germanium, and zircon (but not silicon only or germanium only).)

Description

閃爍體材料、放射線檢測器以及放射線檢查裝置 Scintillator material, radiation detector, and radiation inspection device

本發明係關於檢測X射線之放射線檢測器及/或檢測伽瑪射線之放射線檢測器所使用之閃爍體材料,更詳言之,係關於可使用於X射線CT裝置及/或伽瑪射線PET裝置所用之放射線檢測器之由含有複合氧化物之透光性陶瓷或由單結晶所成之閃爍體材料、放射線檢測器及放射線檢查裝置。 The present invention relates to a scintillator material for detecting an X-ray radiation detector and/or a radiation detector for detecting gamma rays, and more particularly to an X-ray CT apparatus and/or a gamma ray PET. The radiation detector used in the device is a translucent ceramic containing a composite oxide or a scintillator material made of a single crystal, a radiation detector, and a radiation inspection device.

將以X射線或伽瑪射線等放射線能量(高能量電磁光子)激發時,能釋出可見光及/或近可見光區域之光能量之固體閃爍體材料與將光訊號轉換成電訊號之光電轉換電路組合作成放射線檢測器,自過去以來即使用於資源探索用、保全(security)用、行李或食品之檢查用、高能量之研究等各種用途中。其中,上述將放射線能量轉換成可見光及/或近可見光區域之光能量之固體閃爍體材料、與將光能量轉換成電訊號之光電轉換電路、以及使輸出之電訊號數位化並計算處理而圖像化之電腦斷層攝影(CT)系統組合之X射線CT裝置或伽瑪射線PET (Positron Emission Tomography,正子發射斷層掃描)裝置,近年來隨著高齡化社會之進展,已以醫療機關為中心急速普及進展。 a solid scintillator material capable of releasing light energy in visible light and/or near-visible light regions and a photoelectric conversion circuit for converting optical signals into electrical signals when excited by radiation energy such as X-rays or gamma rays (high-energy electromagnetic photons) It has been used as a radiation detector for various purposes such as resource exploration, security, baggage or food inspection, and high-energy research. Wherein, the solid scintillator material that converts the radiation energy into light energy in the visible light and/or near-visible light region, the photoelectric conversion circuit that converts the light energy into an electrical signal, and the digital signal of the output are digitized and calculated. X-ray CT device or gamma ray PET combined with computerized tomography (CT) system (Positron Emission Tomography, positron emission tomography) device, in recent years, with the progress of the aging society, the medical institution has been rapidly spreading.

X射線CT裝置與伽瑪射線PET裝置不僅所釋出之放射線波長不同、且所得光訊號以及處理其之系統亦大為不同,各有所長。例如,X射線CT裝置比伽瑪射線PET裝置便宜,但被暴露量比伽瑪射線PET裝置大。另一方面,伽瑪射線PET裝置可高速攝影,適於藉由檢測於癌細胞特異累積之放射線性同位素而檢測癌的位置,但為非常昂貴之裝置。因此,任一裝置之市場增長率及普及率均在進展中。換言之,為了促進對應於日後之高齡化社會之放射線醫療機器之日益普及,對於C射線CT裝置、伽馬射線PET裝置均要求開發有助於被暴露量減低化之新穎發射體材料。 The X-ray CT apparatus and the gamma ray PET apparatus not only have different wavelengths of radiation, but also the resulting optical signals and the system for processing them are greatly different. For example, an X-ray CT apparatus is less expensive than a gamma ray PET apparatus, but is exposed to a larger amount than a gamma ray PET apparatus. On the other hand, the gamma ray PET device is capable of high speed photography and is suitable for detecting the position of cancer by detecting a radioactive isotope specifically accumulated by cancer cells, but is a very expensive device. Therefore, the market growth rate and penetration rate of any device are in progress. In other words, in order to promote the spread of radiation medical equipment corresponding to an aging society in the future, it is required to develop a novel emitter material that contributes to a reduction in exposure amount for both a C-ray CT apparatus and a gamma-ray PET apparatus.

X射線CT裝置用之閃爍體材料過去以來已知有含過半量之氧化釔(Y2O3)、至多約50莫耳%之氧化鎘(Gd2O3)及小活性量(典型約0.02莫耳%~12莫耳%,較好約1莫耳%~6莫耳%,最好約3莫耳%)之稀土類活性劑氧化物的銪之立方晶構造之透光性氧化物燒結體閃爍體(美國專利第4,421,671號說明書(專利文獻1))。該銪活性型之閃爍體由於發光效率高、殘光程度低且具有其他較佳特性,故過去以來已商用利用。 Scintillator materials for X-ray CT devices have been known to contain more than half of yttrium oxide (Y 2 O 3 ), up to about 50 mol% of cadmium oxide (Gd 2 O 3 ), and small amounts of activity (typically about 0.02). Molar %~12 mol%, preferably about 1 mol%~6 mol%, preferably about 3 mol%) rare earth active agent oxide of yttrium cubic structure of light transmissive oxide sintering The body scintillator (U.S. Patent No. 4,421,671 (Patent Document 1)). The ruthenium-active scintillator has been commercially used in the past because of its high luminous efficiency, low residual light, and other preferable characteristics.

作為其他X射線CT裝置用之閃爍體材料,於例如日本特公平7-97139號公報(專利文獻2)中揭示 一種放射線檢測器,其特徵係包含透光性燒結體閃爍體與檢測出該閃爍體之發光之光檢測器,該透光性燒結體閃爍體係於藉由放射線而發光之粉末閃爍體且以下述通式表示之粉末中添加燒結助劑,並裝填入金屬製容器中並真空密封,進行熱靜水壓加壓,進而進行退火而成者,可獲得發光效率高之閃爍體材料(Ln1-x-yPrxCey)2O2S:(X) For example, Japanese Patent Publication No. Hei 7-97139 (Patent Document 2) discloses a radiation detector including a light-transmitting sintered body scintillator and detecting the flicker. a light-emitting light detector of the body, the light-transmitting sintered body scintillation system is added to a powder scintillator which emits light by radiation, and a sintering aid is added to the powder represented by the following formula, and is filled in a metal container and vacuumed Sealing, hot hydrostatic pressure pressurization, and annealing, a scintillator material (Ln 1-xy Pr x Ce y ) 2 O 2 S: (X) with high luminous efficiency can be obtained.

(其中,Ln表示由Gd、La及Y所組成之群選出之至少一種元素,X表示由F及Cl所組成之群選出之至少一種元素,x為3×10-6≦x≦0.2之範圍之值,y為1×10-6≦x≦5×10-3之範圍之值,X之量為2至1000ppm之範圍)。 (wherein Ln represents at least one element selected from the group consisting of Gd, La, and Y, and X represents at least one element selected from the group consisting of F and Cl, and x is a range of 3 × 10 -6 ≦ x ≦ 0.2 The value, y is a value in the range of 1 × 10 -6 ≦ x ≦ 5 × 10 -3 , and the amount of X is in the range of 2 to 1000 ppm).

且,該系統之材料自過去以來已被廣泛商用作為X射線CT裝置用之閃爍體材料,例如日本專利第3741302號公報(專利文獻3)已提案持續的改良發明。 Further, the material of the system has been widely used as a scintillator material for an X-ray CT apparatus since the past. For example, Japanese Patent No. 3,741,302 (Patent Document 3) has proposed a continuous improvement.

再者,其他X射線CT裝置用之閃爍體材料,於日本特開2007-169647號公報(專利文獻4)中揭示 Further, a scintillator material for other X-ray CT apparatuses is disclosed in Japanese Laid-Open Patent Publication No. 2007-169647 (Patent Document 4).

[請求項1] [Request 1]

一種閃爍體組成物,其係於燒鈍前具備具有式A3B2C3O12之石榴石(garnet)之施以燒結及燒鈍之閃爍體組成物,式中,A為具有由Tb、Ce及Lu所成之群之至少一種要素或該等之組合的位置,B為八面體位(Al),C為四面體位(仍為Al),上述石榴石具有由下列所組成 之群選出之至少一種取代:(1)上述式中,上述八面體位B之0.05原子~2原子之Al以Sc取代者,(2)上述式中,0.005原子~2原子之氧以氟取代,且針對上述A位取代相同數之Ca原子者,(3)上述式中,B位之0.005原子~2原子以Mg取代,且以氟取代相同數之氧原子者,(4)上述式中,B位之0.005原子~2原子以自Mg/Si、Mg/Zr、Mg/Ti及Mg/Hf所組成之群選出之至少一種組合之原子取代者,(5)上述式中,B位之0.005原子~2原子以自Li/Nb、Li/Ta所組成之群選出之至少一組合之原子取代者,(6)上述式中,上述A位之0.005原子~2原子以Ca取代,且以矽原子取代相等數之B位或C位者」,係比習知之閃爍體組成物更短之衰減時間且可降低以高能量線曝射時之損傷。 A scintillator composition which is provided with a sintered and burnt scintillator composition having a garnet of the formula A 3 B 2 C 3 O 12 before burning, wherein A is composed of Tb , at least one element of the group formed by Ce, and the position of the combination, B is an octahedral position (Al), and C is a tetrahedral position (still Al), and the garnet is selected from the group consisting of At least one substitution: (1) in the above formula, Al of 0.05 atom to 2 atom of the above octahedral B is substituted by Sc, and (2) in the above formula, oxygen of 0.005 atom to 2 atom is substituted with fluorine, and Wherein the above A site is substituted for the same number of Ca atoms, (3) in the above formula, the 0.005 atom to 2 atom of the B site is substituted with Mg, and the same number of oxygen atoms are replaced by fluorine, (4) the above formula, B position An atomic substituent of at least one combination selected from the group consisting of Mg/Si, Mg/Zr, Mg/Ti, and Mg/Hf of 0.005 atoms to 2 atoms, (5) 0.005 atom of the B position in the above formula~ 2 atoms are atomic substitutions of at least one combination selected from the group consisting of Li/Nb and Li/Ta, (6) in the above formula, 0.005 atom to 2 atoms of the above A site are substituted with Ca, and Equal to the number of substituents B or C bits by bit ", conventional scintillator-based ratio of the composition of a shorter decay time was the time of the damage and may reduce the high energy ray exposure.

該系統之具有石榴石構造之閃爍體材料為新穎發明,故最近頻繁地提案類似發明(例如,日本特開2012-72331號公報(專利文獻5)、日本特開2012-184397號公報(專利文獻6)等)。 The scintillator material having a garnet structure of the system is a novel invention, and a similar invention has been frequently proposed recently (for example, Japanese Laid-Open Patent Publication No. 2012-72331 (Patent Document 5) and Japanese Patent Laid-Open No. 2012-184397 (Patent Literature) 6) etc.).

最新的X射線CT裝置之旗艦機種係進展搭載該閃爍體材料之模樣。 The flagship model of the latest X-ray CT apparatus is progressing with the appearance of the scintillator material.

另一方面,伽瑪射線PET裝置用之閃爍體材 料自古以來即利用Bi4Ge3O12單結晶(通稱BGO)。BGO由於發光強度某程度較強,衰減時間亦某特定程度較短且熔點低,製造成本不高,故作為比較便宜之PET裝置用材料有其需要。且隨後,已開發發光量增加、衰減時間亦急遽縮短之Gd2SiO5:Ce(通稱GSO)單結晶,且採用於伽瑪射線PET裝置之高端機種(例如,日本特公昭62-8472號公報(專利文獻7))。 On the other hand, scintillator materials for gamma ray PET devices have utilized Bi 4 Ge 3 O 12 single crystals (commonly known as BGO) since ancient times. Since BGO has a certain degree of luminescence intensity, a certain degree of decay time is short, the melting point is low, and the manufacturing cost is not high, it is required as a relatively inexpensive PET device material. Then, Gd 2 SiO 5 :Ce (commonly known as GSO) single crystal with an increase in luminescence amount and a short decay time has been developed, and is used in a high-end model of a gamma ray PET device (for example, Japanese Patent Publication No. 62-8472) (Patent Document 7)).

進而隨後,開發出發光量更大、衰減時間亦更短之Lu2SiO5:Ce(通稱LSO)單結晶,即使目前仍搭載於伽瑪射線PET裝置之旗艦機中(例如,日本特開平9-118593號公報(專利文獻8))。 Subsequently, a Lu 2 SiO 5 :Ce (commonly known as LSO) single crystal having a larger amount of luminescence and a shorter decay time was developed, even though it is still mounted in the flagship machine of the gamma ray PET device (for example, Japanese Patent Laid-Open 9- Bulletin No. 118593 (Patent Document 8)).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]美國專利第4,421,671號說明書 [Patent Document 1] US Patent No. 4,421,671

[專利文獻2]日本特公平7-97139號公報 [Patent Document 2] Japanese Patent Publication No. 7-97139

[專利文獻3]日本專利第3741302號公報 [Patent Document 3] Japanese Patent No. 3741302

[專利文獻4]日本特開2007-169647號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2007-169647

[專利文獻5]日本特開2012-72331號公報 [Patent Document 5] Japanese Laid-Open Patent Publication No. 2012-72331

[專利文獻6]日本特開2012-184397號公報 [Patent Document 6] Japanese Patent Laid-Open Publication No. 2012-184397

[專利文獻7]日本特公昭62-8472號公報 [Patent Document 7] Japanese Patent Publication No. 62-8472

[專利文獻8]日本特開平9-118593號公報 [Patent Document 8] Japanese Patent Laid-Open No. Hei 9-118593

然而,關於X射線CT裝置,上述專利文獻1中揭示之(Y過半量Gd≦0.5)2O3:Eu系之閃爍體材料之問題點為衰減時間較長及密度小至未達6.0g/cm3,必須以厚膜化使用。 However, regarding the X-ray CT apparatus, the problem of the (Y over half amount of Gd ≦ 0.5 ) 2 O 3 :Eu-based scintillator material disclosed in the above Patent Document 1 is that the decay time is long and the density is as small as less than 6.0 g/ Cm 3 must be used in thick film.

且,上述專利文獻2、3中揭示之(Gd1-x-yPrxCey)2O2S系之閃爍體材料之問題點係因單斜晶故閃爍體光之透過率低如30%左右,及以高能量線曝射時之損傷較大。 Further, the problem of the (Gd 1-xy Pr x Ce y ) 2 O 2 S-based scintillator material disclosed in the above Patent Documents 2 and 3 is that the transmittance of the scintillator light is as low as about 30% due to the monoclinic crystal. And the damage caused by exposure to high energy lines is large.

又,上述專利文獻4、5、6中揭示之(Tb1-x-yLuxCey)3(Al1-xScz)2Al3O12系之閃爍體材料具有之特徵為衰減時間短、因係立方晶故閃爍體光之透過率高如80%以上,以高能量線曝射時之損傷非常小,作為X射線CT裝置用之閃爍體材料為極合適之物質。但,由於必須在高溫處理‧製作非常複雜組成之複合氧化物,故有極昂貴之問題。或者,雖亦揭示依組成而定而降低燒結處理溫度之實施例,但由於構成元素種類較多,故以期望之組成製造時,也會有良率相當低之問題。 Further, the (Tb 1-xy Lu x Ce y ) 3 (Al 1-x Sc z ) 2 Al 3 O 12 -based scintillator material disclosed in the above Patent Documents 4, 5, and 6 has a characteristic that the decay time is short, Because of the cubic crystal, the transmittance of the scintillator light is as high as 80% or more, and the damage when the high-energy line is exposed is very small, and it is an extremely suitable material for the scintillator material for the X-ray CT apparatus. However, since it is necessary to process at a high temperature and to produce a composite oxide having a very complicated composition, it is extremely expensive. Alternatively, although an embodiment in which the sintering treatment temperature is lowered depending on the composition is disclosed, since there are many types of constituent elements, there is a problem that the yield is relatively low when manufactured in a desired composition.

另一方面,關於伽瑪射線PET裝置,針對BGO單結晶其製造成本雖合理,但發光強度及衰減時間不足。且,GSO單結晶、LSO單結晶由於發光強度大、衰減時間亦短,故作為伽瑪射線PET裝置用之閃爍體材料為非常適合之物質。然而,由於熔點極高而為2000℃上下,故與其他閃爍體材料比較,亦有特別昂貴之問題。 On the other hand, regarding the gamma ray PET apparatus, the manufacturing cost for the BGO single crystal is reasonable, but the luminescence intensity and the decay time are insufficient. Further, GSO single crystal and LSO single crystal are very suitable as scintillator materials for gamma ray PET devices because of their high luminous intensity and short decay time. However, since the melting point is extremely high and it is 2000 ° C or higher, it is also a particularly expensive problem compared with other scintillator materials.

本發明係鑑於上述問題而完成者,其目的係提供一種藉由X射線及/或伽瑪射線之激發而發出在比以往更長波長側之可見光區域中具有發光峰值波長之閃爍光,該閃爍光之透過率高,且衰減時間亦短,可藉由1800℃以下之熱處理製造較單純組成之複合氧化物,亦可抑制製造成本之新穎閃爍體材料、放射線檢測器及放射線檢查裝置。 The present invention has been made in view of the above problems, and an object thereof is to provide a scintillation light having an emission peak wavelength in a visible light region longer than a conventional wavelength by excitation of X-rays and/or gamma rays. The light transmittance is high and the decay time is also short. The composite oxide having a simple composition can be produced by heat treatment at 1800 ° C or lower, and the novel scintillator material, the radiation detector, and the radiation inspection device can be suppressed.

本發明為達成上述目的,而提供下述之閃爍體材料、放射線檢測器及放射線檢查裝置。 In order to achieve the above object, the present invention provides a scintillator material, a radiation detector, and a radiation inspection apparatus.

[1]一種閃爍體材料,其特徵係由包含以下述式(1)表示之複合氧化物作為主成分之透光性陶瓷或以下述式(1)表示之複合氧化物之單結晶所成,(TbxR1-x-yCey)2B2O7 (1) [1] A scintillator material characterized by comprising a light-transmitting ceramic containing a composite oxide represented by the following formula (1) as a main component or a single crystal of a composite oxide represented by the following formula (1). (Tb x R 1-xy Ce y ) 2 B 2 O 7 (1)

(式中,x為0.2以上且未達1之範圍,y為0.00001以上且0.01以下之範圍,x+y≦1,R係選自由釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠所組成之群之至少1種稀土類元素,B係選自由鈦、錫、鉿、矽、鍺、鋯所組成之群之至少1種元素(但,關於矽及鍺為該元素單獨之情況除外))。 (wherein x is a range of 0.2 or more and less than 1, and y is a range of 0.00001 or more and 0.01 or less, x + y ≦ 1, and R is selected from the group consisting of ruthenium, cadmium, osmium, iridium, osmium, iridium, osmium, iridium And at least one rare earth element of the group consisting of strontium, and the B system is at least one element selected from the group consisting of titanium, tin, antimony, bismuth, antimony, and zirconium (however, 矽 and 锗 are separate for the element) Except in case)).

[2]如[1]所記載之閃爍體材料,其以X射線及/或伽瑪射線激發時,發出於610~700nm之波長範圍具有發光峰值之光。 [2] The scintillator material according to [1], which is excited by X-rays and/or gamma rays, emits light having an emission peak in a wavelength range of 610 to 700 nm.

[3]如[1]或[2]所記載之閃爍體材料,其於厚度1mm時之波長633nm之光透過率為70%以上。 [3] The scintillator material according to [1] or [2], wherein the light transmittance at a wavelength of 633 nm at a thickness of 1 mm is 70% or more.

[4]如[1]~[3]中任一項所記載之閃爍體材料,其係以具有焦綠石(pyrochlore)晶格之立方晶作為主相。 [4] The scintillator material according to any one of [1] to [3], wherein a cubic crystal having a pyrochlore crystal lattice is used as a main phase.

[5]一種放射線檢測器,其特徵係搭載如[1]~[4]中任一項所記載之閃爍體材料。 [5] A radiation detector comprising the scintillator material according to any one of [1] to [4].

[6]一種放射線檢查裝置,其特徵係搭載如[5]所記載之放射線檢測器。 [6] A radiation inspection apparatus characterized by being equipped with the radiation detector described in [5].

依據本發明,藉由成為含有鋱(terbium),且為鈰活性型,以與石榴石相為不同之立方晶稀土類氧化物作為主成分之閃爍體材料,而可提供藉由X射線及/或伽瑪射線之激發而發出於比以往更長波長側之可見光區域中具有發光峰值波長之閃爍光,且該閃爍光之透過率高,進而衰減時間亦短,而可使製造溫度為1800℃以下故亦抑制了製造成本之新穎閃爍體材料。 According to the present invention, by using a scintillator material containing terbium and being a ruthenium active type and a cubic rare earth oxide different from the garnet phase as a main component, X-rays and/or Or the excitation of the gamma ray and the scintillation light having the luminescence peak wavelength in the visible light region on the longer wavelength side than the conventional one, and the transmittance of the scintillation light is high, and the decay time is also short, and the manufacturing temperature is 1800 ° C. The following is also a novel scintillator material which suppresses the manufacturing cost.

10‧‧‧放射線檢測器 10‧‧‧radiation detector

11‧‧‧閃爍體板 11‧‧‧Sparkling board

12‧‧‧反射材 12‧‧‧Reflecting material

13‧‧‧受光元件 13‧‧‧Light-receiving components

14‧‧‧容器 14‧‧‧ Container

圖1係顯示本發明之放射線檢測器之構成之概略圖,(a)係其俯視圖,(b)係(a)中之A-A剖面圖。 Fig. 1 is a schematic view showing the configuration of a radiation detector of the present invention, wherein (a) is a plan view and (b) is a cross-sectional view taken along line A-A in (a).

[閃爍體材料] [Scintillator material]

以下,針對本發明之閃爍體材料加以說明。 Hereinafter, the scintillator material of the present invention will be described.

本發明之閃爍體材料係由含有以下述式(1)表示之複合氧化物作為主成分之透光性陶瓷或以下述式(1)表示之複合氧化物之單結晶所成,(TbxR1-x-yCey)2B2O7 (1) The scintillator material of the present invention is formed of a single crystal containing a transparent ceramic having a composite oxide represented by the following formula (1) as a main component or a composite oxide represented by the following formula (1): (Tb x R 1-xy Ce y ) 2 B 2 O 7 (1)

(式中,x為0.2以上且未達1之範圍,y為0.00001以上且0.01以下之範圍,x+y≦1,R係選自由釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠所組成之群之至少1種稀土類元素,B係選自由鈦、錫、鉿、矽、鐠、鋯所組成之群之至少1種元素(但,關於矽及鍺為該元素單獨之情況除外))。 (wherein x is a range of 0.2 or more and less than 1, and y is a range of 0.00001 or more and 0.01 or less, x + y ≦ 1, and R is selected from the group consisting of ruthenium, cadmium, osmium, iridium, osmium, iridium, osmium, iridium And at least one rare earth element of the group consisting of strontium, and the B system is at least one element selected from the group consisting of titanium, tin, antimony, bismuth, antimony, and zirconium (however, 矽 and 锗 are separate for the element) Except in case)).

上述式(1)中,鋱為藉X射線及/或伽瑪射線照射而有效率被激發之骨架材料,且該激發能量具有效率良好地能量轉移至賦活材的鈰離子之激發位準,進而該經能量轉移之鈰之激發能量係可藉Si發光二極體進行光電轉換之波長之光,係可調整成可以在比過去長波長側之可見光區域中具有發光波峰之光進行發光之位準的元素,係本發明中之必要元素。由於可效率良好地將能量轉移至賦活材的鈰離子且提高發光強度故較佳。且,若可藉Si發光二極體進行光電轉換,則可以遠低於由光電子倍增管受光之低成本製造放射線檢測器故而較佳。另外,若可以比過去長波長側之可見光區域中具有發光波峰之光進行發 光,則使用Si發光二極體之放射線檢測器中,可使偏壓電壓降低故可實現電路之簡略化而較佳。 In the above formula (1), 鋱 is a skeleton material which is efficiently excited by X-ray and/or gamma ray irradiation, and the excitation energy has an efficient energy transfer to the excitation level of the erbium ion of the active material, and further The excitation energy of the energy transfer is a wavelength of light that can be photoelectrically converted by the Si light-emitting diode, and can be adjusted to a level that can emit light at a light having a light-emitting peak in a visible light region on the long wavelength side of the past. The element is an essential element in the present invention. It is preferred because the energy can be efficiently transferred to the cerium ions of the active material and the luminescence intensity is improved. Further, if the photoelectric conversion can be performed by the Si light-emitting diode, it is preferable to manufacture the radiation detector at a low cost lower than that of the photomultiplier tube. In addition, if it is possible to emit light having a luminescence peak in the visible light region on the long wavelength side in the past In the case of light, a radiation detector using a Si light-emitting diode can reduce the bias voltage, so that the circuit can be simplified and preferably.

又,過去之閃爍體材料發出之光之發光波峰雖隨著若干組成而異,但係在510~590nm之波長範圍內。 Moreover, although the luminescence peak of the light emitted by the scintillator material in the past varies with several compositions, it is in the wavelength range of 510 to 590 nm.

鈰係迅速地接收鋱及進而另一種以上之稀土類元素所吸收之X射線及/或伽瑪射線能量而成為激發狀態,而迅速地遷移到低能量狀態之元素,係本發明中必要之另一種元素。活性劑中利用鈰時,相較於銪等其他活性劑,衰減時間縮短故較佳。 The lanthanide rapidly receives the X-ray and/or gamma ray energy absorbed by the lanthanum and further rare earth elements to become an excited state, and rapidly migrates to an element of a low energy state, which is necessary in the present invention. An element. When hydrazine is used in the active agent, the decay time is preferably shortened compared to other active agents such as hydrazine.

R係具有提高材料密度且提高X射線及/或伽瑪射線能量之吸收剖面積之作用的元素群,進而具有與鈰之電子遷移狀態共振而提高發光效率之作用之元素群均包含於其中。 R is an element group having an effect of increasing the material density and increasing the absorption cross-sectional area of X-rays and/or gamma ray energy, and further includes an element group having a function of resonating with the electron transport state of ruthenium to improve luminous efficiency.

作為此種元素可較好地利用釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠。 As such an element, cerium, cadmium, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium can be preferably used.

又,將Tb、Ce、R統稱為A部位位置之元素。 Further, Tb, Ce, and R are collectively referred to as elements of the A site position.

B係具有使該閃爍體材料之結晶構造規定於焦綠石型之立方晶之作用之元素,在本發明中為重要元素。結果,本發明之閃爍體材料成為以具有焦綠石晶格之立方晶(焦綠石型立方晶)作為主相者,較好為由焦綠石型立方晶所成者。又,所謂成為主相係指作為結晶構造之焦綠石型立方晶佔全體之90體積%以上,較好佔95體積%以上,更好佔99體積%以上,最好佔99.9體積%以上。結晶構造為立方晶時,由於不會有因雙折射造成之散射之影 響,提高以X射線及/或伽瑪射線激發時輸出之閃爍光之透過率,且厚度1mm下之波長633nm之光的透過率為70%以上故較佳。 The B system has an element which defines the crystal structure of the scintillator material as a cubic crystal of the pyrochlore type, and is an important element in the present invention. As a result, the scintillator material of the present invention has a cubic crystal (vitreous-type cubic crystal) having a pyrochlore crystal lattice as a main phase, and preferably a pyrochlore-type cubic crystal. In addition, the term "main phase" means that the pyrochlore type cubic crystal as a crystal structure accounts for 90% by volume or more, preferably 95% by volume or more, more preferably 99% by volume or more, and most preferably 99.9% by volume or more. When the crystal structure is cubic, there is no scattering due to birefringence It is preferable to increase the transmittance of the scintillation light which is output when excited by X-rays and/or gamma rays, and the transmittance of light having a wavelength of 633 nm at a thickness of 1 mm is preferably 70% or more.

此種元素可較好地利用鈦、錫、鉿、矽、鍺、鋯。但,關於矽及鍺為該元素單獨之情況除外。 Such an element can preferably utilize titanium, tin, antimony, bismuth, antimony or zirconium. Except where 矽 and 锗 are separate for this element.

又,將進入該位置之元素稱為B部位位置之元素。且,上述Tb、Ce、R統稱為A部位位置之元素。亦即,本發明之閃爍體材料係以A2B2O7型之複合氧化物作為主成分。 Further, an element that enters the position is referred to as an element of the position of the B portion. Further, the above Tb, Ce, and R are collectively referred to as elements of the A site position. That is, the scintillator material of the present invention contains a composite oxide of the A 2 B 2 O 7 type as a main component.

上述式(1)係構成為含有鋱及鈰、與作為R之選自由釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠所組成之群之至少1種稀土類元素,且含有作為B之選自由鈦、錫、鉿、矽、鍺、鋯所組成之群之至少1種元素(但,關於矽及鍺為該元素單獨之情況除外)者,但亦可進而含有其他元素。其他元素可例示為鐿(ytterbium),至於各種雜質群典型上可例示為鈣、鋁、磷、鎢、鉬等。 The above formula (1) is composed of at least one rare earth element containing lanthanum and cerium, and a group selected from the group consisting of lanthanum, cadmium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, and containing The B is at least one element selected from the group consisting of titanium, tin, antimony, bismuth, bismuth, and zirconium (except that yttrium and lanthanum are excluded as the element alone), but may further contain other elements. Other elements may be exemplified by ytterbium, and various impurity groups are typically exemplified by calcium, aluminum, phosphorus, tungsten, molybdenum, and the like.

其他元素之含量在將鋱之總量設為100時,較好為10以下,更好為0.1以下,最好為0.001以下(實質為零)。 The content of the other element is preferably 10 or less, more preferably 0.1 or less, and most preferably 0.001 or less (substantially zero) when the total amount of lanthanum is 100.

式(1)中,x為0.2以上且未達1.0。式(1)中,x未達0.2時,以X射線及/或伽瑪射線激發時之最強波峰波長在本發明中推定之波長範圍中處於短波長側,且隨著發光波長朝短波長側偏移,亦有衰減時間變慢之傾向故不佳。相反地,x為0.2以上且未達1.0時, 可使以X射線及/或伽瑪射線激發時之最強波峰波長進入本發明中推定之波長範圍內,亦衰減時間亦加快故較佳。 In the formula (1), x is 0.2 or more and less than 1.0. In the formula (1), when x is less than 0.2, the strongest peak wavelength when excited by X-rays and/or gamma rays is on the short-wavelength side in the wavelength range estimated in the present invention, and the emission wavelength is toward the short-wavelength side. Offset, there is also a tendency for the decay time to slow down, which is not good. Conversely, when x is 0.2 or more and less than 1.0, It is preferable to make the strongest peak wavelength when excited by X-rays and/or gamma rays into the wavelength range estimated in the present invention, and also to increase the decay time.

式(1)中,y為0.00001以上且0.01以下,較好為0.0001以上且0.01以下。y未達0.00001時,由於迅速接收所吸收之X射線能量及/或伽瑪射線而成為激發狀態,且使迅速遷移至低能量狀態之活性劑之濃度變得太稀,故發光強度降低,衰減時間變長故不佳。且y超過0.01時,由於發光強度再度開始降低故不佳。又,x+y≦1。 In the formula (1), y is 0.00001 or more and 0.01 or less, preferably 0.0001 or more and 0.01 or less. When y is less than 0.00001, the excited state is rapidly received by the absorbed X-ray energy and/or gamma ray, and the concentration of the active agent that rapidly migrates to the low-energy state becomes too thin, so that the luminescence intensity is lowered and attenuated. Time is getting longer and it is not good. When y exceeds 0.01, the luminescence intensity starts to decrease again, which is not preferable. Also, x+y≦1.

本發明之閃爍體材料含有以上述式(1)表示之複合氧化物作為主成分。亦即,本發明之閃爍體材料只要含有以上述式(1)表示之複合氧化物作為主成分即可,亦可含有其他成分作為副成分。 The scintillator material of the present invention contains a composite oxide represented by the above formula (1) as a main component. In other words, the scintillator material of the present invention may contain a composite oxide represented by the above formula (1) as a main component, and may contain other components as an accessory component.

此處,所謂作為主成分含有意指含有50質量%以上之以上述式(1)表示之複合氧化物。以式(1)表示之複合氧化物之含量較好為80質量%以上,更好為90質量%以上,又更好為99質量%以上,最好為99.9質量%以上。 Here, the term "main component" means a composite oxide represented by the above formula (1), which is contained in an amount of 50% by mass or more. The content of the composite oxide represented by the formula (1) is preferably 80% by mass or more, more preferably 90% by mass or more, still more preferably 99% by mass or more, and most preferably 99.9% by mass or more.

一般例示之其他副成分有單結晶育成時所摻雜之摻雜物、助焊劑、陶瓷製造時所添加之燒結助劑等。 Other subcomponents generally exemplified are dopants doped during single crystal growth, fluxes, and sintering aids added during the manufacture of ceramics.

本發明之閃爍體材料之製造方法有浮法區(floating zone)法、微下拉法等之單結晶製造方法,以及陶瓷製造法,使用任一種製法均可。但,一般之單結晶製造方法對於固熔體之濃度比設計有一定程度之限制,本 發明中以陶瓷製造法更好。 The method for producing the scintillator material of the present invention may be a single crystal production method such as a floating zone method or a micro-downdraw method, or a ceramic production method, and any of the methods may be used. However, the general single crystal manufacturing method has a certain degree of limitation on the concentration ratio of the solid solution. In the invention, the ceramic manufacturing method is better.

以下,針對作為本發明之閃爍體材料之製造方法之例的陶瓷製造法進一步加以詳述,但並不排除沿襲本發明之技術思想之單結晶製造方法。 Hereinafter, the ceramic production method which is an example of the method for producing the scintillator material of the present invention will be described in detail, but the single crystal production method according to the technical idea of the present invention is not excluded.

《陶瓷製造法》 Ceramic Manufacturing Law [原料] [raw material]

本發明中所用之原料可較好地使用由鋱及鈰、以及稀土類元素R(R係選自由釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠所組成之群之至少1種稀土類元素)、以及B元素(B係選自由鈦、錫、鉿、矽、鍺、鋯所組成之群之至少1種元素)所成之成為本發明之閃爍體材料構成元素之金屬粉末,乃至硝酸、硫酸、尿酸等之水溶液,或者上述元素之複合氧化物粉末等。尤其,上述各元素之各氧化物粉末由於安定且安全使得操作較容易故較佳。又,該等原料之純度較好為99.9質量%以上。 The raw material used in the present invention can be preferably used from at least 1 group consisting of lanthanum and cerium, and rare earth element R (R is selected from the group consisting of lanthanum, cadmium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium a rare earth element) and a B element (B is selected from at least one element selected from the group consisting of titanium, tin, antimony, bismuth, antimony, and zirconium) to form a metal powder of the scintillator material constituent element of the present invention. Or an aqueous solution of nitric acid, sulfuric acid, uric acid or the like, or a composite oxide powder of the above elements. In particular, each of the oxide powders of the above elements is preferred because it is stable and safe to handle. Further, the purity of the raw materials is preferably 99.9% by mass or more.

又,針對上述原料之粉末形狀並無特別限制,可較好地利用例如角狀、球狀、板狀之粉末。且,亦可較好地利用二次凝聚之粉末,且亦可較好地利用藉由噴霧乾燥處理等之造粒處理而造粒之顆粒狀粉末。另外,關於該等原料粉末之調整步驟並無特別限制。可較好地利用以共沉澱法、粉碎法、噴霧熱分解法、溶凝膠法、烷氧化物水解法、其他所有合成方法製作之原料粉末。此外,亦可藉適當之濕式球磨機、珠粒研磨機、噴射研磨機或乾式 噴射研磨機、捶磨機等處理所得原料粉末。 Moreover, the shape of the powder of the above-mentioned raw material is not particularly limited, and for example, a powder having an angular shape, a spherical shape or a plate shape can be preferably used. Further, it is also possible to preferably use the secondary agglomerated powder, and it is also possible to preferably use a granulated powder granulated by a granulation treatment such as a spray drying treatment. Further, the adjustment step of the raw material powders is not particularly limited. A raw material powder produced by a coprecipitation method, a pulverization method, a spray pyrolysis method, a sol gel method, an alkoxide hydrolysis method, or all other synthesis methods can be preferably used. In addition, you can also use a suitable wet ball mill, bead mill, jet mill or dry The obtained raw material powder is treated by a jet mill, a honing machine or the like.

本發明所用之複合氧化物粉末原料中,亦可添加適當之燒結抑制助劑(燒結助劑)。尤其為了獲得高的透光性,較好添加符合於常用主體材料之較佳燒結抑制助劑。但,其純度較好為99.9質量%以上。又,未添加燒結抑制助劑時,針對所使用之原料粉末選定其一次粒徑為奈米尺寸且燒結活性極高者即可。該選擇係適當實施。 A suitable sintering inhibitor (sintering aid) may be added to the composite oxide powder raw material used in the present invention. In particular, in order to obtain high light transmittance, it is preferred to add a preferred sintering inhibiting aid in accordance with a conventional host material. However, the purity thereof is preferably 99.9% by mass or more. Further, when the sintering inhibitor is not added, the raw material powder to be used may be selected such that the primary particle diameter is a nanometer size and the sintering activity is extremely high. This choice is implemented as appropriate.

進而基於製造步驟中之品質安定性或良率提升目的,有時會添加各種有機添加劑。本發明中關於該等亦無特別限制。亦即,可叫好地利用各種分散劑、結合劑、潤滑劑、可塑劑等。 Further, various organic additives may be added depending on the purpose of quality stability or yield improvement in the production steps. There is no particular limitation on the above in the present invention. That is, various dispersing agents, binders, lubricants, plasticizers, and the like can be preferably used.

[製造步驟] [manufacturing steps]

本發明係使用上述原料粉末,壓製成形成特定形狀後進行脫脂,接著燒結,製作相對密度最低為92%以上之經緻密化之燒結體。作為隨後之步驟較好進行熱等靜壓加壓(HIP)處理。 In the present invention, the raw material powder is used, pressed to form a specific shape, and then degreased, followed by sintering to prepare a densified sintered body having a relative density of at least 92%. The hot isostatic pressing (HIP) treatment is preferably carried out as a subsequent step.

(壓製成形) (press forming)

本發明之製造方法中,可較好地利用通常之壓製成形步驟。亦即,極通常可利用將原料粉末填充於模具中自一定方向加壓之壓製步驟,或將原料粉末密閉收納於可變形之防水容器中以靜水壓加壓之CIP(冷靜水壓加壓(Cold Isostatic Pressing))步驟。又,施加壓力只要邊確認所 得成形體之相對密度邊適當調整即可,並無特別限制,例如於市售之CIP裝置可對應之300MPa以下左右之壓力範圍內進行管理時可抑制製造成本。或者,不僅是成形時之成形步驟,亦可較好地利用燒結前一次實施之熱壓製步驟或放電電漿燒結步驟、微波加熱步驟等。 In the production method of the present invention, a usual press forming step can be preferably utilized. In other words, it is generally possible to use a pressing step of filling the raw material powder in a mold in a certain direction, or to store the raw material powder in a deformable waterproof container by a hydrostatic pressure CIP (cool pressure pressurization) (Cold Isostatic Pressing)) steps. Also, apply pressure as long as you confirm The relative density of the molded body is appropriately adjusted, and is not particularly limited. For example, when the commercially available CIP device can be managed within a pressure range of about 300 MPa or less, the manufacturing cost can be suppressed. Alternatively, not only the forming step at the time of molding but also the hot pressing step or the discharging plasma sintering step, the microwave heating step, and the like which are performed once before sintering may be preferably used.

(脫脂) (degreased)

本發明之製造方法中,可較好地利用通常之脫脂步驟。亦即,可經過利用加熱爐之升溫脫脂步驟。且,此時之環境氣體種類亦無特別限制,可較好地利用空氣、氧、氫等。脫脂溫度亦無特別限制,但假使使用混合有機添加劑之原料時,較好升溫至可分解消除有機成分之溫度。 In the production method of the present invention, a usual degreasing step can be preferably utilized. That is, it can be subjected to a temperature rising degreasing step using a heating furnace. Further, the type of the environmental gas at this time is not particularly limited, and air, oxygen, hydrogen, or the like can be preferably utilized. The degreasing temperature is also not particularly limited, but if a raw material of a mixed organic additive is used, it is preferred to raise the temperature to a temperature at which the organic component can be decomposed and eliminated.

(燒結) (sintering)

本發明之製造方法中,可較好地利用一般之燒結步驟。亦即,可較好地利用電阻加熱方式、感應加熱方式等加熱燒結步驟。此時之環境氣體並無特別限制,但可較好地利用惰性氣體、氧、氫、真空等。 In the production method of the present invention, a general sintering step can be preferably utilized. That is, a heating and sintering step such as a resistance heating method or an induction heating method can be preferably used. The ambient gas at this time is not particularly limited, but an inert gas, oxygen, hydrogen, vacuum, or the like can be preferably used.

本發明之燒結步驟中之燒結溫度可依據所選擇之起始原料適當調整。一般係使用所選擇之起始原料,適當選擇比欲製造之各種複合氧化物燒結體之熔點低數10℃至100℃乃至200℃左右低溫側之溫度。且,在製造於所選定之溫度附近存在相變化成立方晶以外之相之溫度帶之焦綠石型複合氧化物燒結體時,嚴格管理成該溫度帶 以外之條件並燒結時,可抑制立方晶以外之相之混入,具有可降低雙折射性散亂之優點。 The sintering temperature in the sintering step of the present invention can be suitably adjusted depending on the starting material selected. In general, the selected starting materials are used, and the temperature on the low temperature side of about 10 ° C to 100 ° C or even about 200 ° C lower than the melting point of the various composite oxide sintered bodies to be produced is appropriately selected. Further, when a pyrochlore-type composite oxide sintered body having a temperature band in which a phase other than the crystal lattice is changed is formed in the vicinity of the selected temperature, the temperature band is strictly managed. When it is sintered under other conditions, it is possible to suppress the incorporation of phases other than the cubic crystal, and it is advantageous in that the birefringence is scattered.

本發明之燒結步驟中之燒結保持時間係依據所選擇之起始原料適當調整。一般大多數情況為數小時左右。但,燒結步驟後之複合氧化物燒結體之相對密度必須緻密化至最低92%以上。 The sintering retention time in the sintering step of the present invention is suitably adjusted depending on the selected starting materials. In most cases, it is a few hours or so. However, the relative density of the composite oxide sintered body after the sintering step must be densified to a minimum of 92% or more.

(熱等靜壓加壓(HIP)) (hot isostatic pressing (HIP))

本發明之製造方法中,於經過燒結步驟後可再追加設置進行熱等靜壓加壓(HIP(Hot Isostatic Pressing))處理之步驟。 In the production method of the present invention, a step of performing a hot isostatic pressing (HIP) treatment may be additionally performed after the sintering step.

又,此時之加壓氣體介質種類可較好地利用氬氣、氮等惰性氣體、或Ar-O2。藉由加壓氣體介質加壓之壓力較好為50~300MPa,更好為100~300MPa。壓力未達50MPa時會有無法獲得透光性改善效果之情況,超過300MPa時即使增加壓力仍無法獲得其以上之透光性改善,有對裝置負荷過大而損傷裝置之虞。施加壓力為市售之HIP裝置可處理之196MPa以下時較為簡便而較佳。 Further, in this case, the type of the pressurized gas medium can preferably utilize an inert gas such as argon gas or nitrogen or Ar-O 2 . The pressure applied by the pressurized gas medium is preferably from 50 to 300 MPa, more preferably from 100 to 300 MPa. When the pressure is less than 50 MPa, the effect of improving the light transmittance may not be obtained. When the pressure exceeds 300 MPa, the light transmittance improvement may not be obtained even if the pressure is increased, and the device may be overloaded and the device may be damaged. It is relatively simple and preferable to apply pressure to a commercially available HIP device which can handle 196 MPa or less.

又,此時之處理溫度(特定保持溫度)只要依據材料之種類及/或燒結狀態適當設定即可,例如設定在1000~2000℃,較好1300~1800℃之範圍。此時,必須為與燒結步驟之情況相同之構成燒結體之複合氧化物之熔點以下及/或相轉移點以下,熱處理溫度超過2000℃時,本發明推定之複合氧化物燒結體會超過熔點或超過相 轉移點,而難以進行適當之HIP處理。且,熱處理溫度未達1000℃時無法獲得燒結體之透光性改善效果。又,關於熱處理溫度之保持時間並無特別限制,但可邊識別構成燒結體之複合氧化物之特性邊適當調整。 Further, the processing temperature (specific holding temperature) at this time may be appropriately set depending on the type of the material and/or the sintering state, and is set, for example, in the range of 1000 to 2000 ° C, preferably 1300 to 1800 ° C. In this case, it is necessary to be below the melting point of the composite oxide constituting the sintered body and/or the phase transition point, which is the same as in the case of the sintering step, and when the heat treatment temperature exceeds 2000 ° C, the composite oxide sintered body estimated by the present invention exceeds the melting point or exceeds phase Transfer points, and it is difficult to perform proper HIP processing. Further, when the heat treatment temperature is less than 1000 ° C, the effect of improving the light transmittance of the sintered body cannot be obtained. Further, the holding time of the heat treatment temperature is not particularly limited, but can be appropriately adjusted while recognizing the characteristics of the composite oxide constituting the sintered body.

又,進行HIP處理之加熱材、隔熱材、處理容器並無特別限制,可較好地利用石墨乃至鉬(Mo)。 Further, the heating material, the heat insulating material, and the processing container for performing the HIP treatment are not particularly limited, and graphite or molybdenum (Mo) can be preferably used.

(光學研磨) (optical grinding)

本發明之製造方法中,針對經過上述一連串製造步驟之透光性複合氧化物燒結體(透光性陶瓷),較好研磨處於其光學上利用之軸上之兩端面。此時之光學面精度於測定波長λ=633nm時較好為λ/4以下,最好為λ/8以下。又,於經光學研磨之面上成膜適當之抗反射膜亦可進一步降低光學損失。 In the production method of the present invention, it is preferred that the light-transmitting composite oxide sintered body (translucent ceramic) subjected to the above-described series of manufacturing steps is polished at both end faces on the axis for optical use. The optical surface accuracy at this time is preferably λ/4 or less, and preferably λ/8 or less at the measurement wavelength λ = 633 nm. Further, it is possible to further reduce the optical loss by forming an appropriate anti-reflection film on the surface of the optical polishing.

如上述般所得之本發明之閃爍體材料以具有焦綠石晶格之立方晶為主相,以X射線及/或伽瑪射線激發時,可發出在比過去之閃爍體材料發出之閃爍光更長波長側之可見光區域中具有發光波峰之閃爍光,例如較好於波長範圍610~700nm,更好630~670nm中具有發光波峰,且最好在該等波長範圍具有最強波長波峰之光。且,為其厚度為1mm時之波長633nm之光透過率為70%以上者。 The scintillator material of the present invention obtained as described above is mainly composed of a cubic crystal having a pyrochlore crystal lattice, and when excited by X-rays and/or gamma rays, emits scintillation light emitted from a scintillator material in the past. The scintillation light having an emission peak in the visible light region on the longer wavelength side is, for example, preferably having a wavelength range of 610 to 700 nm, more preferably having an emission peak in 630 to 670 nm, and preferably having the strongest wavelength peak in the wavelength range. Further, the light transmittance at a wavelength of 633 nm when the thickness is 1 mm is 70% or more.

[放射線檢測器] [radiation detector]

本發明之閃爍體材料適用於X射線CT裝置用途及/或伽瑪射線PET裝置用途,可較好地作為在該裝置內矩陣狀配置多數,且藉由X射線及/或伽瑪射線照射而激發之放射線檢測器用。又,本發明推定之X射線及伽瑪射線列舉為例如以使用由鎢或鎢合金(Re-W合金)所成之具有電子束照射面之靶材之X射線管產生之X射線、由放射線同位素鈷60之伽瑪射線源產生之伽瑪射線。 The scintillator material of the present invention is suitable for X-ray CT apparatus use and/or gamma ray PET apparatus use, and can be preferably arranged in a matrix in the apparatus, and is irradiated by X-rays and/or gamma rays. Excited radiation detector. Further, the X-rays and gamma rays estimated in the present invention are, for example, X-rays generated by an X-ray tube using a target having an electron beam irradiation surface made of tungsten or a tungsten alloy (Re-W alloy), and radiation. A gamma ray produced by a gamma ray source of the isotope cobalt 60.

本發明之放射線檢測器包含由本發明之閃爍體材料所成之板、與其後段之Si發光二極體等受光元件。其構成例示於圖1。本發明之放射線檢測器10係以反射材12將由本發明之閃爍體材料所成之閃爍體板11分割配置成縱向6列、橫向6行之36元件,進而於各閃爍體板11之後段配置受光元件13且收納於容器14中而成者。該放射性檢測器10係構成為藉由自前方入射之X射線及/或伽瑪射線而激發閃爍體板11,藉受光元件13將自該閃爍體板11輸出之發光能量轉換成電訊號,經放大而輸出。 The radiation detector of the present invention comprises a light-emitting element such as a plate made of the scintillator material of the present invention and a Si light-emitting diode of the latter stage. The configuration is illustrated in Fig. 1. In the radiation detector 10 of the present invention, the scintillator plate 11 made of the scintillator material of the present invention is divided into 36 elements of 6 columns in the vertical direction and 6 rows in the horizontal direction by the reflection material 12, and is further disposed in the subsequent stage of each of the scintillator plates 11. The light receiving element 13 is housed in the container 14. The radioactive detector 10 is configured to excite the scintillator plate 11 by X-rays and/or gamma rays incident from the front, and convert the luminescence energy output from the scintillator plate 11 into an electric signal by the light-receiving element 13, Zoom in and output.

又,受光元件13為可檢測出本發明之閃爍體材料之發光峰值波長之區域之光者,且為X射線CT裝置或伽瑪射線PET裝置所搭載之放射線檢測器中所用之一般者,列舉為Si發光二極體(PD)、Si-APD(雪崩發光二極體(Avalanche Phitidiide))、CCD(電荷耦合裝置(Charge Coupled Device))影像感知器、光電子倍增管(PMT)等。至於受光元件13較好為例如感度波長範圍 450~1050nm,最大感度波長為550nm以上,較好為感度波長範圍450~800n,最大感度波長為590nm以上之Si-APD(雪崩發光二極體)較佳。 Further, the light-receiving element 13 is a light-detecting region of the region of the emission peak wavelength of the scintillator material of the present invention, and is generally used in an X-ray CT apparatus or a radiation detector mounted on the gamma-ray PET apparatus. It is a Si light emitting diode (PD), a Si-APD (Avalanche Light Diode (Avalanche Phitidiide)), a CCD (Charge Coupled Device) image sensor, a photomultiplier tube (PMT), or the like. As for the light receiving element 13, it is preferably, for example, a sensitivity wavelength range 450 to 1050 nm, the maximum sensitivity wavelength is 550 nm or more, preferably a sensitivity wavelength range of 450 to 800 n, and a Si-APD (avalanche light-emitting diode) having a maximum sensitivity wavelength of 590 nm or more is preferable.

組合如此配置成矩陣狀之本發明之放射線檢測器10與將自放射線檢測器10輸出之電訊號進行數位化且經計算處理而圖像化之電腦斷層攝影(CT)系統,製作X射線CT裝置或伽瑪射線PET裝置之放射線檢查裝置。 The X-ray CT apparatus is manufactured by combining the radiation detector 10 of the present invention arranged in a matrix form with a computerized tomography (CT) system that digitizes the electrical signals output from the radiation detector 10 and is imaged by calculation processing. Or a radiation inspection device for a gamma ray PET device.

[實施例] [Examples]

以下,列舉實施例及比較例,更具體說明本發明,但本發明並不受限於實施例。又,原料粉末之一次粒徑係以雷射光繞射法以重量平均值求出。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples, but the present invention is not limited to the examples. Further, the primary particle diameter of the raw material powder was determined by a laser light diffraction method using a weight average value.

[實施例1、比較例1] [Example 1 and Comparative Example 1]

上述式(1)中,針對選擇鈦、錫或鉿作為B部位位置之元素之例加以說明。 In the above formula (1), an example in which titanium, tin or antimony is selected as an element of the B site position will be described.

獲得信越化學工業(股)製之氧化鋱粉末、氧化鈰粉末、氧化釔粉末、氧化鎘粉末、氧化鎦粉末、氧化鑭粉末、氧化鈥粉末、氧化銩粉末、氧化銪粉末、氧化鏑粉末及氧化鐠粉末。且,獲得高純度化學研究所(股)製之氧化鈦粉末、氧化錫粉末以及American Elements公司製之氧化鉿粉末,純度均為99.9質量%以上。 Obtained cerium oxide powder, cerium oxide powder, cerium oxide powder, cadmium oxide powder, cerium oxide powder, cerium oxide powder, cerium oxide powder, cerium oxide powder, cerium oxide powder, cerium oxide powder and oxidation by Shin-Etsu Chemical Industry Co., Ltd.鐠 powder. Further, titanium oxide powder, tin oxide powder, and cerium oxide powder manufactured by American Elements Co., Ltd., which were manufactured by High Purity Chemical Research Co., Ltd., were obtained, and the purity was 99.9% by mass or more.

使用上述原料,製作成為如表1之最終組成之混合比 率之各混合氧化物原料。亦即,分別準備使最終之鋱、鈰、R元素之莫耳比率之合計(亦即,A部位位置之元素莫耳數),與鈦、錫或鉿之莫耳數(亦即,B部位位置之元素之莫耳數)成為等量莫耳比率之方式秤量之混合粉末。接著,邊防止相互試驗樣品彼此之混入邊在乙醇中以氧化鋯製球磨機裝置進行分散‧混合處理。處理時間為24小時。隨後,進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀原料。另外,將該等粉末放入銥坩堝中,以高溫馬弗爐(muffle furnace)在1600℃、3小時進行燒成處理,獲得包含比較例之28種類之燒成原料。以PANalytical公司製之粉末X射線繞射裝置進行所得各燒成原料之繞射圖型解析。結果,任一種燒成原料均確認為係作為結晶構造以焦綠石型立方晶(具有焦綠石晶格之立方晶)為主相之氧化物原料。 Using the above raw materials, a mixing ratio of the final composition as shown in Table 1 was produced. The ratio of each mixed oxide raw material. That is, the sum of the molar ratios of the final elements of 鋱, 铈, and R (i.e., the number of elements in the position of the A site), and the number of moles of titanium, tin, or bismuth (i.e., part B) The molar amount of the element of the position is a mixed powder of the same amount as the molar ratio. Next, dispersion and ‧ mixing treatment were carried out in ethanol using a zirconia ball mill apparatus while preventing mutual test samples from being mixed with each other. The processing time is 24 hours. Subsequently, a spray drying treatment was carried out to prepare a granulated raw material having an average particle diameter of 20 μm. Further, these powders were placed in a crucible, and subjected to a calcination treatment at 1600 ° C for 3 hours in a high-temperature muffle furnace to obtain a calcined raw material containing 28 types of the comparative examples. The diffraction pattern analysis of each of the obtained calcined raw materials was carried out by a powder X-ray diffraction apparatus manufactured by PANalytical Co., Ltd. As a result, it was confirmed that any of the calcined raw materials was an oxide raw material having a pyrochlore type cubic crystal (a cubic crystal having a pyrochlore crystal lattice) as a main phase as a crystal structure.

以氧化鋯製球磨機裝置將所得各種原料再度於乙醇中進行分散‧混合處理。此時,添加適當有機分散劑與有機黏結劑。處理時間為40小時。隨後再進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀焦綠石型氧化物原料(起始原料)。 The obtained various raw materials were again dispersed and mixed with ethanol in a zirconia ball mill apparatus. At this time, a suitable organic dispersant and an organic binder are added. The processing time is 40 hours. Subsequently, a spray drying treatment was carried out to prepare a particulate pyrochlore-type oxide raw material (starting material) having an average particle diameter of 20 μm.

接著,將所得起始原料填充於直徑40nm之模具中,以單軸壓製成形機暫時成形成厚度6mm之棒狀後,以198MPa之壓力進行靜水壓壓製獲得CIP成形體。接著將所得CIP成形體放入馬弗爐中,在大氣中800℃下加熱處理3小時進行脫脂。 Next, the obtained starting material was filled in a mold having a diameter of 40 nm, and temporarily formed into a rod shape having a thickness of 6 mm by a uniaxial press molding machine, and then hydrostatically pressed at a pressure of 198 MPa to obtain a CIP molded body. Next, the obtained CIP molded body was placed in a muffle furnace, and heat-treated at 800 ° C for 3 hours in the air to carry out degreasing.

接著,將所得已脫脂之成形體饋入真空加熱爐中,以100℃/h之升溫速率升溫至1500~1700℃,保持3小時後以600℃/h之降溫速率冷卻獲得燒結體。此時,以使樣品之燒結相對密度成為92%以上之方式調整燒結溫度或保持時間。 Next, the obtained degreased molded body was fed into a vacuum heating furnace, and the temperature was raised to 1500 to 1700 ° C at a heating rate of 100 ° C / h, and after 3 hours, it was cooled at a cooling rate of 600 ° C / h to obtain a sintered body. At this time, the sintering temperature or the holding time was adjusted so that the sintered relative density of the sample became 92% or more.

再者,針對上述燒結體,使用Ar氣體作為加壓介質,進行在HIP熱處理溫度1500~1750℃、壓力190MPa下保持時間3小時之HIP處理。 Further, the sintered body was subjected to HIP treatment at a HIP heat treatment temperature of 1500 to 1750 ° C and a pressure of 190 MPa for 3 hours using Ar gas as a pressurizing medium.

針對如此獲得之各陶瓷燒結體,切斷成長寬2mm×2mm、厚度1mm,進行研削及研磨處理而成為閃爍體板。接著,於閃爍體板彼此之間設置反射材(由分散於矽氧糊料中之氧化鎂粉末所成,藉乾燥而接著者),切割成縱向6列、橫向6行之36個元件後,以光學面精度λ/4(測定波長λ=633nm時)進行該樣品之光學兩端面之最終光學研磨。 Each of the ceramic sintered bodies thus obtained was cut into a width of 2 mm × 2 mm and a thickness of 1 mm, and subjected to grinding and polishing treatment to form a scintillator plate. Next, a reflective material (made of magnesium oxide powder dispersed in the cerium oxide paste, followed by drying) is disposed between the scintillator plates, and is cut into 36 elements of 6 columns in the vertical direction and 6 rows in the horizontal direction. The final optical polishing of the optical both end faces of the sample was carried out with an optical surface precision λ/4 (measurement wavelength λ = 633 nm).

使用HeNe雷射(波長633nm),以下述要領測定所得各閃爍體板之透過率。此時,需注意不使雷射光照射到閃爍體板與閃爍體板之間之反射材。 The transmittance of each obtained scintillator plate was measured using a HeNe laser (wavelength: 633 nm) in the following manner. At this time, care should be taken not to irradiate the laser beam between the scintillator plate and the scintillator plate.

(透過率之測定方法) (Measurement method of transmittance)

透過率係由使波長633nm之光透過時之強度進行測定,基於以下之式求出。 The transmittance is measured by the intensity when light having a wavelength of 633 nm is transmitted, and is obtained by the following equation.

透過率(%)=1/Io×100 Transmission rate (%) = 1 / Io × 100

(式中,I表示透過光強度(透過厚度1mm之樣品之光的強度),Io表示入射光強度)。 (In the formula, I represents the transmitted light intensity (intensity of light transmitted through a sample having a thickness of 1 mm), and Io represents incident light intensity).

隨後將各閃爍體板11配置於受光元件13上製作圖1之放射線檢測器10。接著,使用組合該放射線檢測器10與鎢靶材之X射線管製作之光輸出測定裝置,在X射線管之管電壓120kV下對閃爍體板11照射X射線,求出流入受光元件13之電流值作為光輸出。又,使用Si-APD(濱松Photonics(股)製短波長型,型號S5343,感度波長範圍550~800nm,最大感度波長590nm)作為受光元件13。且,該Si-APD在波長540nm(基準樣品之CdWO4單結晶(CWO單結晶)閃爍體之發光峰值波長)下之感度與在波長650nm(相當於實施例樣品之發光峰值波長)下之感度為相同程度。 Subsequently, each of the scintillator plates 11 is placed on the light receiving element 13 to form the radiation detector 10 of FIG. Then, using the light output measuring device which is formed by combining the X-ray tube of the radiation detector 10 and the tungsten target, the X-ray tube is irradiated with X-rays at a tube voltage of 120 kV, and the current flowing into the light-receiving element 13 is obtained. The value is output as light. Further, Si-APD (short wavelength type manufactured by Hamamatsu Photonics Co., Ltd., model number S5343, sensitivity wavelength range of 550 to 800 nm, maximum sensitivity wavelength of 590 nm) was used as the light receiving element 13. Further, the sensitivity of the Si-APD at a wavelength of 540 nm (the peak wavelength of the CdWO 4 single crystal (CWO single crystal) scintillator of the reference sample) and the sensitivity at a wavelength of 650 nm (corresponding to the luminescence peak wavelength of the sample of the example) To the same extent.

此時,如下述求出閃爍體板11之發光峰值波長、光輸出及衰減時間。 At this time, the emission peak wavelength, the light output, and the decay time of the scintillator plate 11 are obtained as follows.

(發光峰值波長之測定方法) (Method for measuring the peak wavelength of luminescence)

以前述X射線照射評價系統評價光輸出前,以螢光壽命測定裝置(濱松Photonics(股)製之Quantaurus-Tau:型號C11367-1)測定光致發光(photoluminescence),由 其結果求出發光峰值波長。亦即,以激發波長280nm之光激發,使發出之螢光經過光柵(gratings)之分光,以CCD照相機檢測螢光波長光譜,以螢光輸出為最大之波長視為X射線照射時之發光峰值波長。又,激發波長280nm之光為螢光壽命測定裝置中可入射之最短波長亦即具有最大能量之紫外線,係如在X射線照射時不引起骨架材之振動,但於使閃爍體板激發時依序緩和之激發能量能確認到最後發光之波長時之充分激發波長,可使用作為X射線照射時用於測定發光峰值波長之X射線之代用激發光。 Before the light output was evaluated by the X-ray irradiation evaluation system, photoluminescence was measured by a fluorescence lifetime measuring device (Quantaurus-Tau: Model C11367-1, manufactured by Hamamatsu Photonics Co., Ltd.). As a result, the luminescence peak wavelength was obtained. That is, the excitation light is excited by a light having a wavelength of 280 nm, the emitted fluorescent light is subjected to gratings, and the fluorescence wavelength spectrum is detected by a CCD camera, and the maximum wavelength of the fluorescence output is regarded as an emission peak when X-ray irradiation is performed. wavelength. Further, the light having an excitation wavelength of 280 nm is the shortest wavelength that can be incident on the fluorescence lifetime measuring device, that is, the ultraviolet light having the maximum energy, for example, does not cause vibration of the skeleton material during X-ray irradiation, but when the scintillator plate is excited, The excitation energy of the order relaxation can confirm the sufficient excitation wavelength at the wavelength of the last emission, and the excitation light for the X-ray for measuring the peak wavelength of the emission at the time of X-ray irradiation can be used.

(光輸出之測定方法) (Method of measuring light output)

此處,基於容易比較目的,針對放射線檢測器10配置另外取得之CdWO4單結晶(CWO單結晶)閃爍體取代閃爍體板11,藉由使用前述光輸出測定裝置之評價法求出該時之光輸出,且顯示將該值設為「1」時之樣品之光輸出比率(對於CWO比)作為各樣品之光輸出值。 Here, for the purpose of comparison, the CdWO 4 single crystal (CWO single crystal) scintillator which is separately obtained is placed in the radiation detector 10 instead of the scintillator plate 11, and the time is obtained by the evaluation method using the light output measuring device. Light output, and the light output ratio (for CWO ratio) of the sample when the value was set to "1" was displayed as the light output value of each sample.

(衰減時間之測定方法) (Method of measuring decay time)

將使用前述光輸出測定裝置如前述照射X射線且各樣品之光輸出安定之狀態設為100%,接著停止X射線照射,測定停止後至各樣品之光輸出強度衰減至安定狀態之5%之時間(X射線照射時之衰減時間)。 In the light output measuring apparatus described above, the state in which the X-rays are irradiated and the light output of each sample is stabilized is set to 100%, and then the X-ray irradiation is stopped, and the light output intensity of each sample is attenuated to 5% of the stable state after the measurement is stopped. Time (decay time during X-ray irradiation).

又,將使用前述螢光壽命測定裝置如前述照射激發波長280nm之光且各樣品之光輸出為安定之狀態設為 100%,接著停止光照射,測定停止後至各樣品之光輸出強度衰減至安定狀態之5%之時間(紫外線照射時之衰減時間)。 Further, in the above-described fluorescence lifetime measuring device, the light having an excitation wavelength of 280 nm is irradiated and the light output of each sample is stabilized. After 100%, the light irradiation was stopped, and the time until the light output intensity of each sample was attenuated to 5% of the stable state after the stop (the decay time at the time of ultraviolet irradiation) was measured.

以上一連串評價結果彙整示於表2。 The above series of evaluation results are shown in Table 2.

由上述結果,由實施例之群所成之以焦綠石型之複合氧化物作為主成分之閃爍體材料在厚度為1mm時之波長633nm之光之透過率均為70%以上且為透明,故作為閃爍體材料發光之光在其內部並無無謂的散射損失,且以X射線激發時之最強發光峰值波長在638~661nm之波長範圍內,故可藉作為受光元件之Si發光二極體沒問題地進行光電轉換,再者,光輸出亦不比過去材料遜色,而且因X射線照射之殘光輸出5%時之衰減時間非常短而為5ms以下。又,紫外線照射之殘光輸出5%時之衰減時間為測定下限程度(裝置性能界限)之1ns。藉此,於X射線CT裝置或伽瑪射線PET裝置等放射線檢查裝置中利用本發明之閃爍體材料時,可使切換週期高速化,故可達成短時間、低被暴露量之操作性、安全性優異之放射線檢查裝置。 From the above results, the scintillator material having the pyrochlore-type composite oxide as a main component formed by the group of the examples has a transmittance of 70% or more and a transparency of light having a wavelength of 633 nm at a thickness of 1 mm. Therefore, the light emitted as the scintillator material has no unnecessary scattering loss in the interior thereof, and the strongest emission peak wavelength when excited by X-rays is in the wavelength range of 638 to 661 nm, so that it can be used as the Si light-emitting diode of the light-receiving element. The photoelectric conversion is carried out without problems, and the light output is not inferior to that of the past materials, and the decay time of the residual light output by X-ray irradiation is 5%, which is 5 ms or less. Further, the decay time when the residual light of the ultraviolet irradiation is 5% is 1 ns of the lower limit of measurement (device performance limit). In this way, when the scintillator material of the present invention is used in a radiation inspection apparatus such as an X-ray CT apparatus or a gamma ray PET apparatus, the switching cycle can be speeded up, so that operability and safety in a short time and a low exposure amount can be achieved. Excellent radiation inspection device.

又,比較例1-1~1-3之組成中,由於以X射線激發時之最強發光峰值波長偏移到未達600nm之短波長側,故以Si發光二極體之光電轉換效率下降。且,比較例1-4之組成由於活性劑的鈰之濃度過低,故光輸出低。相反地,比較例1-5之組成由於活性劑的鈰之濃度過高,故產生濃度消光現象而使光輸出降低。 Further, in the compositions of Comparative Examples 1-1 to 1-3, since the strongest emission peak wavelength at the time of X-ray excitation was shifted to the short wavelength side of less than 600 nm, the photoelectric conversion efficiency of the Si light-emitting diode was lowered. Further, in the composition of Comparative Example 1-4, since the concentration of ruthenium of the active agent was too low, the light output was low. On the contrary, in the composition of Comparative Example 1-5, since the concentration of ruthenium of the active agent was too high, a concentration extinction phenomenon occurred to lower the light output.

[實施例2、比較例2] [Example 2, Comparative Example 2]

針對上述式(1)中,作為B部位位置之元素係選自由矽、鍺、鋯所組成之群之例加以說明。 In the above formula (1), the element which is the position of the B site is selected from the group consisting of ruthenium, osmium, and zirconium.

取得信越化學工業(股)製之氧化鋱粉末、氧化鈰粉末、氧化釔粉末、氧化鎘粉末。且,取得高純度化學研究所(股)製之二氧化矽粉末、氧化鍺粉末以及第一稀元素化學工業(股)製之氧化鋯粉末。純度均為99.9質量%以上。 Acquired cerium oxide powder, cerium oxide powder, cerium oxide powder, and cadmium oxide powder manufactured by Shin-Etsu Chemical Co., Ltd. Further, cerium oxide powder, cerium oxide powder, and zirconia powder of the first rare element chemical industry (stock) manufactured by High Purity Chemical Research Institute Co., Ltd. were obtained. The purity was 99.9% by mass or more.

使用上述原料,製作成為如表3之最終組成之混合比率之各混合氧化物原料。亦即,分別準備使最終之鋱、鈰、及釔或鎘之莫耳比率之合計(亦即,A部位位置之元素之莫耳數),與矽及鋯、或鍺及鋯之莫耳比率之合計,或矽、鍺或鋯之莫耳數(亦即,B部位位置之元素之莫耳數)成為等量莫耳比率之方式秤量之混合粉末。接著,邊防止相互試驗樣品彼此之混入邊在乙醇中以氧化鋯製球磨機裝置進行分散‧混合處理。處理時間為24小時。隨後,進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀原料。 Using the above raw materials, each mixed oxide raw material which is a mixing ratio of the final composition of Table 3 was produced. That is, the total ratio of the molar ratios of the final tantalum, niobium, and tantalum or cadmium (i.e., the number of moles of the element at the A site position) to the molar ratio of niobium and zirconium, or hafnium and zirconium, respectively. The total amount, or the number of moles of yttrium, lanthanum or zirconium (i.e., the number of moles of the element at the position of the B site) is a mixed powder of the same molar ratio. Next, dispersion and ‧ mixing treatment were carried out in ethanol using a zirconia ball mill apparatus while preventing mutual test samples from being mixed with each other. The processing time is 24 hours. Subsequently, a spray drying treatment was carried out to prepare a granulated raw material having an average particle diameter of 20 μm.

進而,將該等粉末放入銥坩堝中,以高溫馬弗爐在1600℃、3小時進行燒成處理,獲得包含比較例之7種類之燒成原料。以PANalytic公司製之粉末X射線繞射裝置進行所得各燒成原料之繞射圖型解析。結果,可確認為作為結晶構造之以焦綠石型立方晶(具有焦綠石晶格之立方晶)為主相之氧化物原料者係實施例2-1、2-2、2-3、2-4之群。且,雖為焦綠石型,但結晶系為斜方晶之原料係比較例2-1與2-2之群。另外,除了焦綠石型立方晶以外混合存在其他螢石(fluorite)型正方晶之原料為實施例2-5。 Further, these powders were placed in a crucible, and calcined at 1600 ° C for 3 hours in a high-temperature muffle furnace to obtain a calcined raw material containing seven types of comparative examples. The diffraction pattern analysis of each of the obtained calcined raw materials was carried out by a powder X-ray diffraction apparatus manufactured by PANalytic Co., Ltd. As a result, it was confirmed that the pyrochlore type cubic crystal (the cubic crystal having the pyrochlore crystal lattice) as the crystal structure is the oxide raw material of the main phase, and the examples are 2-1, 2-2, and 2-3. Group of 2-4. Further, although it is a pyrochlore type, the raw material of the crystal is orthorhombic is a group of Comparative Examples 2-1 and 2-2. Further, the raw materials of other fluorite-type tetragonal crystals other than the pyrochlore-type cubic crystals were the examples 2-5.

以氧化鋯製球磨機裝置將如此所得各原料再度於乙醇中進行分散‧混合處理。此時,添加適當有機分散劑與有機黏結劑。處理時間為40小時。隨後再進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀焦綠石型氧化物原料(起始原料)。 Each of the materials thus obtained was again subjected to dispersion and mixing treatment in ethanol using a zirconia ball mill apparatus. At this time, a suitable organic dispersant and an organic binder are added. The processing time is 40 hours. Subsequently, a spray drying treatment was carried out to prepare a particulate pyrochlore-type oxide raw material (starting material) having an average particle diameter of 20 μm.

接著,將所得起始原料填充於直徑40nm之模具中,以單軸壓製成形機暫時成形為厚度6mm之棒狀後,以198MPa之壓力進行靜水壓壓製獲得CIP成形體。接著將所得CIP成形體放入馬弗爐中,在大氣中800℃下加熱處理3小時進行脫脂。 Next, the obtained starting material was filled in a mold having a diameter of 40 nm, and temporarily formed into a rod shape having a thickness of 6 mm by a uniaxial press molding machine, and then hydrostatically pressed at a pressure of 198 MPa to obtain a CIP molded body. Next, the obtained CIP molded body was placed in a muffle furnace, and heat-treated at 800 ° C for 3 hours in the air to carry out degreasing.

接著,將所得已脫脂之成形體饋入真空加熱爐中,以100℃/h之升溫速率升溫至1500~1700℃,保持3小時後以600℃/h之降溫速率冷卻獲得燒結體。此時,以使樣品之燒結相對密度成為92%以上之方式調整燒結溫度或保持 時間。 Next, the obtained degreased molded body was fed into a vacuum heating furnace, and the temperature was raised to 1500 to 1700 ° C at a heating rate of 100 ° C / h, and after 3 hours, it was cooled at a cooling rate of 600 ° C / h to obtain a sintered body. At this time, the sintering temperature is adjusted or maintained so that the sintered relative density of the sample becomes 92% or more. time.

另外,針對上述燒結體,進行使用Ar氣體作為加壓介質,在HIP熱處理溫度1500~1750℃、壓力190MPa下保持時間3小時之HIP處理。 Further, the sintered body was subjected to HIP treatment using Ar gas as a pressurizing medium at a HIP heat treatment temperature of 1500 to 1750 ° C and a pressure of 190 MPa for 3 hours.

接著,針對所得之各陶瓷燒結體,切斷成長寬2mm×2mm、厚度1mm,進行研削及研磨處理。接著使該等透過反射材加工成由6×6之36個元件所成之閃爍體材後,以光學面精度λ/4(測定波長λ=633nm時)進行該樣品之光學兩端面之最終光學研磨。 Next, each of the obtained ceramic sintered bodies was cut to have a growth width of 2 mm × 2 mm and a thickness of 1 mm, and subjected to grinding and polishing treatment. Then, the transmissive reflective material is processed into a scintillator material composed of 36 elements of 6×6, and the final optical end of the optical both ends of the sample is performed with an optical surface precision of λ/4 (measurement wavelength λ=633 nm). Grinding.

使用HeNe雷射(波長633nm)與實施例1同樣測定所得各閃爍體板之透過率。此時,需注意不使雷射光照射到閃爍體板與閃爍體板之間之反射材。 The transmittance of each obtained scintillator plate was measured in the same manner as in Example 1 using a HeNe laser (wavelength: 633 nm). At this time, care should be taken not to irradiate the laser beam between the scintillator plate and the scintillator plate.

隨後與實施例1同樣將各閃爍體板11配置於受光元件13上製作圖1之放射線檢測器10。接著,與實施例1同樣製作光輸出測定裝置,以鎢靶材之X射線管之管電壓120kV下對閃爍體板11照射X射線,求出流到受光元件13之電流值作為光輸出。此時,與實施例1同樣,求出閃爍體板11之發光峰值波長、光輸出及衰減時間。 Subsequently, in the same manner as in the first embodiment, each of the scintillator plates 11 is placed on the light receiving element 13 to form the radiation detector 10 of Fig. 1 . Then, a light output measuring apparatus was produced in the same manner as in the first embodiment, and X-rays were applied to the scintillator plate 11 at a tube voltage of 120 kV of the X-ray tube of the tungsten target, and the current value flowing to the light receiving element 13 was obtained as a light output. At this time, in the same manner as in the first embodiment, the emission peak wavelength, the light output, and the decay time of the scintillator plate 11 were obtained.

以上一連串之評價結果彙整示於表4。 The results of the above series of evaluations are shown in Table 4.

由上述結果,由實施例之群所成之以焦綠石型之複合氧化物作為主成分之閃爍體材料在厚度為1mm時之波長633nm之光之透過率均為65%以上,尤其實施例2-1~2-4為79%以上且為透明,故作為閃爍體材料發光之光在其內部並無無謂的散亂損失,且以X射線激發時之最強發光峰值波長為656~661nm之波長範圍內,故可藉作為受光元件之Si發光二極體沒問題地進行光電轉換,再者,光輸出亦不比過去材料遜色,而且X射線照射之殘光輸出5%時之衰減時間非常短為6ms以下。又,紫外線照射之殘光輸出5%時之衰減時間為測定下限程度(裝置性能界限)之1nm。又,實施例2-5相較於其他實施例光輸出雖稍低,此係因為實施例2-5之組成中,除焦綠石型立方晶以外亦混合存在螢石型正方晶之相,藉此而增加光散射之故。藉此,於X射線CT裝置或伽瑪射線PET裝置等放射線檢查裝置中利用本發明之閃爍體材料時,可使切換週期高速化,故可達成短時間、低被暴露量之操作性、 安全性優異之放射線檢查裝置。 From the above results, the transmittance of light having a wavelength of 633 nm at a thickness of 1 mm, which is a scintillator material having a pyrochlore-type composite oxide as a main component, is in the range of 65% or more, especially in the examples. 2-1~2-4 is 79% or more and transparent. Therefore, the light emitted as a scintillator material has no unnecessary scattered loss inside, and the strongest luminescence peak wavelength when excited by X-ray is 656~661nm. In the wavelength range, the Si light-emitting diode as the light-receiving element can be photoelectrically converted without any problem. Moreover, the light output is not inferior to the material in the past, and the decay time of the residual light output by X-ray irradiation is 5% is very short. It is 6ms or less. Further, the decay time when the residual light of the ultraviolet irradiation was 5% was 1 nm of the lower limit of measurement (device performance limit). Further, in Examples 2 to 5, the light output was slightly lower than that of the other examples, because in the composition of Example 2-5, the fluorite-type tetragonal phase was mixed in addition to the pyrochlore-type cubic crystal. Thereby increasing the light scattering. In this way, when the scintillator material of the present invention is used in a radiation inspection apparatus such as an X-ray CT apparatus or a gamma ray PET apparatus, the switching cycle can be speeded up, so that operability in a short time and a low exposure amount can be achieved. A radiation inspection device with excellent safety.

又,比較例2-1及2-2之組成,由於結晶系為斜方晶故透過率降低,因此光輸出降低。 Further, in the compositions of Comparative Examples 2-1 and 2-2, since the crystal system was orthorhombic, the transmittance was lowered, and thus the light output was lowered.

[實施例3、比較例3] [Example 3, Comparative Example 3]

針對上述式(1)中,作為B部位位置之元素係選擇鋯或鉿,且調整燒結溫度進行製作之例加以說明。 In the above formula (1), an example in which zirconium or hafnium is selected as the element of the B site position and the sintering temperature is adjusted is described.

取得信越化學工業(股)製之氧化鋱粉末、氧化鈰粉末、氧化鎘粉末、氧化鑭粉末。且,亦取得第一稀元素化學工業(股)製之氧化鋯粉末,以及American Elements公司製之氧化鉿粉末。純度均為99.9質量%以上。 Obtained cerium oxide powder, cerium oxide powder, cadmium oxide powder, and cerium oxide powder manufactured by Shin-Etsu Chemical Co., Ltd. Further, zirconia powder manufactured by the first rare element chemical industry (share) and cerium oxide powder manufactured by American Elements Co., Ltd. were obtained. The purity was 99.9% by mass or more.

使用上述原料,製作成為如表5之最終組成之混合比率之各混合氧化物原料。亦即,分別準備使最終之鋱、鈰、R元素之莫耳比率之合計(亦即,A部位位置之元素莫耳數),與鋯或鉿之莫耳數(亦即,B部位位置之元素莫耳數)成為等量莫耳比率之方式秤量之混合粉末。接著,邊防止相互試驗樣品彼此之混入邊在乙醇中以氧化鋯製球磨機裝置進行分散‧混合處理。處理時間為24小時。隨後進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀原料。另外,將該等粉末放入銥坩堝中,以高溫馬弗爐在1600℃、3小時進行燒成處理,獲得包含比較例之12種類之燒成原料。以PANalytic公司製之粉末X射線繞射裝置進行所得各燒成原料之繞射圖型解析。結果,任一種燒成原料均確認為為作為結晶構造以焦綠石型立方晶 (具有焦綠石晶格之立方晶)為主相之氧化物原料。 Using the above raw materials, each mixed oxide raw material which is a mixing ratio of the final composition of Table 5 was produced. That is, the sum of the molar ratios of the final 鋱, 铈, and R elements (that is, the elemental molar number at the A site position), and the molar number of zirconium or yttrium (ie, the position of the B site) The elemental molar number is a mixed powder of the same amount as the molar ratio. Next, dispersion and ‧ mixing treatment were carried out in ethanol using a zirconia ball mill apparatus while preventing mutual test samples from being mixed with each other. The processing time is 24 hours. Subsequently, a spray drying treatment was carried out to prepare a granulated raw material having an average particle diameter of 20 μm. Further, these powders were placed in a crucible, and subjected to a calcination treatment at 1600 ° C for 3 hours in a high-temperature muffle furnace to obtain a calcined raw material containing 12 types of the comparative examples. The diffraction pattern analysis of each of the obtained calcined raw materials was carried out by a powder X-ray diffraction apparatus manufactured by PANalytic Co., Ltd. As a result, any of the calcined raw materials was confirmed to be a pyrochlore type cubic crystal as a crystal structure. (Cubic crystal with pyrochlore crystal lattice) is the oxide raw material of the main phase.

以氧化鋯製球磨機裝置將所得各原料再度於乙醇中進行分散‧混合處理。此時,添加適當有機分散劑與有機黏結劑。處理時間為40小時。隨後再進行噴霧乾燥處理,製作平均粒徑均為20μm之顆粒狀焦綠石型氧化物原料(起始原料)。 Each of the obtained raw materials was again subjected to dispersion and mixing treatment in ethanol using a zirconia ball mill apparatus. At this time, a suitable organic dispersant and an organic binder are added. The processing time is 40 hours. Subsequently, a spray drying treatment was carried out to prepare a particulate pyrochlore-type oxide raw material (starting material) having an average particle diameter of 20 μm.

接著,將所得起始原料填充於直徑40nm之模具中,以單軸壓製成形機暫時成形為厚度6mm之棒狀後,以198MPa之壓力進行靜水壓壓製獲得CIP成形體。接著將所得CIP成形體放入馬弗爐中,在大氣中800℃下加熱處理3小時進行脫脂。 Next, the obtained starting material was filled in a mold having a diameter of 40 nm, and temporarily formed into a rod shape having a thickness of 6 mm by a uniaxial press molding machine, and then hydrostatically pressed at a pressure of 198 MPa to obtain a CIP molded body. Next, the obtained CIP molded body was placed in a muffle furnace, and heat-treated at 800 ° C for 3 hours in the air to carry out degreasing.

接著,將所得已脫脂之成形體饋入真空加熱爐中,以100℃/h之升溫速率升溫至1650~1750℃,保持10小時後以600℃/h之降溫速率冷卻獲得燒結體。此時,以使樣品之燒結相對密度成為99.2%以上之方式調整燒結溫度或保持時間。 Next, the obtained degreased molded body was fed into a vacuum heating furnace, and the temperature was raised to 1650 to 1750 ° C at a heating rate of 100 ° C / h, and after 10 hours, it was cooled at a cooling rate of 600 ° C / h to obtain a sintered body. At this time, the sintering temperature or the holding time is adjusted so that the sintered relative density of the sample becomes 99.2% or more.

進而,針對上述燒結體,進行使用Ar氣體作為加壓介質,在HIP熱處理溫度1500~1750℃、壓力190MPa下保持時間3小時之HIP處理。 Further, the sintered body was subjected to HIP treatment using Ar gas as a pressurizing medium at a HIP heat treatment temperature of 1500 to 1750 ° C and a pressure of 190 MPa for 3 hours.

接著,針對如此獲得之各陶瓷燒結體,切斷為長寬2mm×2mm、厚度1mm,經研削及研磨處理作成閃爍體板。接著,於閃爍體板彼此之間設置反射材(由分散於矽氧膏中之氧化鎂粉末所成,藉乾燥而接著者)且切成縱向6列、橫向6行之36個元件後,以光學面精度λ/4(測定波長λ=633nm時)對該樣品之光學兩端面進行最終光學研磨。 Next, each of the ceramic sintered bodies thus obtained was cut into a length of 2 mm × 2 mm and a thickness of 1 mm, and subjected to grinding and polishing to form a scintillator plate. Next, a reflective material (made of magnesium oxide powder dispersed in the bismuth oxide paste, followed by drying) is disposed between the scintillator plates, and is cut into 36 elements in 6 rows and 6 rows in the horizontal direction, and then The optical surface precision λ/4 (when the measurement wavelength λ = 633 nm) was subjected to final optical polishing on the optical both end faces of the sample.

使用HeNe雷射(波長633nm)與實施例1同樣測定所得各閃爍體板之透過率。此時,需注意不使雷射光照射到閃爍體板與閃爍體板之間之反射材。 The transmittance of each obtained scintillator plate was measured in the same manner as in Example 1 using a HeNe laser (wavelength: 633 nm). At this time, care should be taken not to irradiate the laser beam between the scintillator plate and the scintillator plate.

隨後與實施例1同樣將各閃爍體板11配置於受光元件13上製作圖1之放射線檢測器10。接著,與實施例1同樣製作光輸出測定裝置,以鎢靶材之X射線管之管電壓120kV下對閃爍體板11照射X射線,求出流到受光元件13之電流值作為光輸出。此時,與實施例1同樣,求出閃爍體板11之發光峰值波長、光輸出及衰減時 間。 Subsequently, in the same manner as in the first embodiment, each of the scintillator plates 11 is placed on the light receiving element 13 to form the radiation detector 10 of Fig. 1 . Then, a light output measuring apparatus was produced in the same manner as in the first embodiment, and X-rays were applied to the scintillator plate 11 at a tube voltage of 120 kV of the X-ray tube of the tungsten target, and the current value flowing to the light receiving element 13 was obtained as a light output. At this time, in the same manner as in the first embodiment, the emission peak wavelength, the light output, and the attenuation of the scintillator plate 11 are obtained. between.

以上一連串之評價結果彙整示於表6。 The results of the above series of evaluations are shown in Table 6.

由上述結果,由實施例之群所成之以焦綠石型之複合氧化物作為主成分之閃爍體材料在厚度為1mm時之波長633nm之光之透過率均為80%以上且為高度透明,故作為閃爍體材料發光之光在其內部並無無謂的散亂損失,且以紫外線激發時之最強發光峰值波長為649~656nm之波長範圍內,故可藉作為受光元件之Si發光二極體沒問題地進行光電轉換,進而,光輸出亦不比過去材料遜色,而且紫外線照射之殘光輸出5%時之衰減時間,於實 施例3-8為15ns,其以外之實施例則極短而為測定下限程度(裝置性能界限)。關於該衰減時間預期為在X射線照射或伽瑪射線照射之情況下亦至少顯示與實施例1、2相同程度之較小值。藉此,於X射線CT裝置或伽瑪射線PET裝置等放射線檢查裝置中利用本發明之閃爍體材料時,可使切換週期大幅高速化,故可完成短時間、低被暴露量之操作性、安全性優異之放射線檢查裝置。 From the above results, the scintillator material having the pyrochlore-type composite oxide as a main component formed by the group of the examples has a transmittance of light of 633 nm at a thickness of 1 mm of 80% or more and is highly transparent. Therefore, the light emitted as the scintillator material has no unnecessary scattered loss in the interior thereof, and the wavelength of the strongest emission peak when excited by ultraviolet rays is in the wavelength range of 649 to 656 nm, so that it can be used as the Si light-emitting diode of the light-receiving element. The photoelectric conversion is carried out without any problem, and the light output is not inferior to that of the past materials, and the decay time of the residual light output by the ultraviolet light is 5%. Examples 3-8 are 15 ns, and the other examples are extremely short and are the lower limit of measurement (device performance limit). The decay time is expected to exhibit at least the same value as that of Examples 1 and 2 in the case of X-ray irradiation or gamma ray irradiation. Therefore, when the scintillator material of the present invention is used in a radiation inspection apparatus such as an X-ray CT apparatus or a gamma ray PET apparatus, the switching cycle can be greatly increased, and the operability of a short time and a low exposure amount can be completed. A radiation inspection device with excellent safety.

又,比較例3-1、3-2之組成,由於活性劑的鈰之濃度過低,故光輸出低。 Further, in the compositions of Comparative Examples 3-1 and 3-2, since the concentration of ruthenium of the active agent was too low, the light output was low.

以上,說明本發明之實施形態,但本發明並不受限於上述實施形態,可在其他實施形態、追加、變更、削減等之熟知本業者可想到的範圍內進行變更,任何樣態只要發揮本發明之作用效果,則均包含於本發明之範圍內。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and can be modified within a range that can be thought of by other persons, such as other embodiments, additions, changes, and reductions. The effects of the present invention are all included in the scope of the present invention.

10‧‧‧放射線檢測器 10‧‧‧radiation detector

11‧‧‧閃爍體板 11‧‧‧Sparkling board

12‧‧‧反射材 12‧‧‧Reflecting material

13‧‧‧受光元件 13‧‧‧Light-receiving components

14‧‧‧容器 14‧‧‧ Container

Claims (6)

一種閃爍體材料,其特徵係由含有以下述式(1)表示之複合氧化物作為主成分之透光性陶瓷或以下述式(1)表示之複合氧化物之單結晶所成,(TbxR1-x-yCey)2B2O7 (1)(式中,x為0.2以上且未達1之範圍,y為0.00001以上且0.01以下之範圍,x+y≦1,R係選自由釔、鎘、鎦、鑭、鈥、銩、銪、鏑、鐠所組成之群之至少1種稀土類元素,B係選自由鈦、錫、鉿、矽、鍺、鋯所組成之群之至少1種元素(但,關於矽及鍺為該元素單獨之情況除外))。 A scintillator material characterized by comprising a translucent ceramic having a composite oxide represented by the following formula (1) as a main component or a single crystal of a composite oxide represented by the following formula (1), (Tb x R 1-xy Ce y ) 2 B 2 O 7 (1) (wherein x is 0.2 or more and not up to 1, and y is 0.00001 or more and 0.01 or less, x + y ≦ 1, R is selected from At least one rare earth element of the group consisting of lanthanum, cadmium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, and B is selected from the group consisting of titanium, tin, lanthanum, cerium, lanthanum, zirconium 1 element (except for the case where 矽 and 锗 are separate for this element)). 如請求項1之閃爍體材料,其以X射線或伽瑪射線激發時,發出於610~700nm之波長範圍具有發光峰值之光。 The scintillator material of claim 1, which emits light having an emission peak in a wavelength range of 610 to 700 nm when excited by X-rays or gamma rays. 如請求項1或2之閃爍體材料,其於厚度1mm時之波長633nm之光透過率為70%以上。 The scintillator material of claim 1 or 2, which has a light transmittance of 70% or more at a wavelength of 633 nm at a thickness of 1 mm. 如請求項1~3中任一項之閃爍體材料,其係以具有焦綠石(pyrochlore)晶格之立方晶作為主相。 The scintillator material according to any one of claims 1 to 3, which has a cubic crystal having a pyrochlore crystal lattice as a main phase. 一種放射線檢測器,其特徵係搭載如請求項1~4中任一項之閃爍體材料。 A radiation detector characterized by being provided with a scintillator material according to any one of claims 1 to 4. 一種放射線檢查裝置,其特徵係搭載如請求項5之放射線檢測器。 A radiation inspection apparatus characterized by being equipped with a radiation detector as claimed in claim 5.
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