TW201521127A - Wire bonding apparatus and wire bonding method - Google Patents

Wire bonding apparatus and wire bonding method Download PDF

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TW201521127A
TW201521127A TW102142683A TW102142683A TW201521127A TW 201521127 A TW201521127 A TW 201521127A TW 102142683 A TW102142683 A TW 102142683A TW 102142683 A TW102142683 A TW 102142683A TW 201521127 A TW201521127 A TW 201521127A
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bonding
wire
metal wire
joint
value
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TW102142683A
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TWI529831B (en
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Naoki Sekine
Motoki Nakazawa
Yong Du
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Shinkawa Kk
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85186Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch

Abstract

A wire bonding apparatus 10 includes a capillary 28 for inserting a wire 30, a non-arrival decision circuit 36 and a controller 80. The non-arrival decision circuit 36 applies a predetermined AC electrical signal between the wire held in the capillary and a bonding object and obtains a capacitance value between the wire held in the capillary and the bonding object. When the capacitance value decreases after a first bonding process, the non-arrival decision circuit 36 decides that the wire is cut from the bonding object. Then, when the capacitance value recovers before arriving at a second bonding point, the non-arrival decision circuit 36 decides that the cut wire hangs and contacts the bonding object.

Description

打線裝置以及打線方法 Wire drawing device and wire bonding method

本發明是有關於一種使用毛細管(capillary)進行打線(wire bonding)的裝置以及方法。 The present invention relates to an apparatus and method for wire bonding using a capillary.

打線裝置例如用以將基板的導線(lead)與半導體晶片(chip)的焊墊(pad)之間以細線的金屬線(wire)連接。打線是以如下方式進行。即,使金屬線與打線用工具(tool)一併朝向導線下降。最初以高速下降,當靠近導線時變為低速。該低速下降被稱為第一搜尋(first search)。繼而,利用工具前端將金屬線壓抵於導線,一面施加超音波振動一面使兩者接合,而成為第一接合(first bond)。於第一接合後,提拉工具而一面使金屬線延出而形成適當的線弧(loop)一面移動至焊墊的上方。當到達焊墊的上方時使工具下降。最初以高速下降,當靠近焊墊時變為低速。該低速下降為第二搜尋(second search)。繼而,利用工具前端將金屬線壓抵於焊墊,一面施加超音波振動一面使兩者接合而進行第二接合(second bond)。於第二接合後,一面利用線夾(wire clamper)停止金屬線的移動一面提拉工具而將金屬線於第二接合 點處切斷。重複該操作,而進行基板的多根導線與半導體晶片的多個焊墊之間的連接。此外,於第一接合、第二接合時,亦可進行適當的加熱。此外,亦可對焊墊進行第一接合,對導線進行第二接合。 The wire bonding device is used, for example, to connect a lead of a substrate to a pad of a semiconductor chip with a thin wire. The line is made as follows. That is, the metal wire is lowered toward the wire together with the wire tool. It initially drops at high speed and becomes low when it is close to the wire. This low speed drop is called the first search. Then, the metal wire is pressed against the wire by the tip end of the tool, and the ultrasonic vibration is applied while the two are joined to form a first bond. After the first bonding, the tool is pulled and the metal wire is extended to form an appropriate loop to move over the pad. Lower the tool when it reaches the top of the pad. It initially drops at a high speed and becomes low when it is close to the pad. The low speed drop is a second search. Then, the metal wire is pressed against the pad by the tip end of the tool, and the second bond is performed while the ultrasonic vibration is applied while the both are applied. After the second bonding, the wire clamper is used to stop the movement of the metal wire while pulling the tool to connect the metal wire to the second bonding. Cut off at the point. This operation is repeated to perform a connection between a plurality of wires of the substrate and a plurality of pads of the semiconductor wafer. Further, appropriate heating may be performed at the time of the first joining and the second joining. In addition, the first bonding of the bonding pads may be performed to perform the second bonding of the wires.

如上所述,於打線時進行第一接合與第二接合該兩種接合,但存在未正常地進行該第一接合或第二接合的情況。另外,有於第一接合尚不充分便轉移至第二接合的線弧形成的階段等中金屬線自導線剝離的情況,此外亦有即便第一接合正常,金屬線亦於線弧形成的中途被切斷的情況。將該些現象統稱為未接合,必須及早地檢測出未接合。於進行未接合檢測時是對基板側與工具的金屬線側之間施加電壓或使兩者之間流通電流,而判斷兩者之間的電阻成分、二極體(diode)成分、電容成分是否正常(例如專利文獻1、專利文獻2)。 As described above, the first bonding and the second bonding are performed at the time of wire bonding, but the first bonding or the second bonding is not normally performed. Further, there is a case where the metal wire is peeled off from the wire in a stage in which the first arc is not sufficiently transferred to the second arc, and the metal wire is formed in the middle of the line arc even if the first bonding is normal. The situation that was cut off. These phenomena are collectively referred to as unjoined, and it is necessary to detect unjoined early. When the unbonding detection is performed, a voltage is applied between the substrate side and the metal wire side of the tool, or a current flows therebetween, and the resistance component, the diode component, and the capacitance component between the two are determined. Normal (for example, Patent Document 1 and Patent Document 2).

不過,作為打線方式,已知有球形接合(ball bonding)方式及楔形接合(wedge bonding)方式。 However, as a wire bonding method, a ball bonding method and a wedge bonding method are known.

球形接合方式是使用可藉由高電壓火花(spark)等而形成無空氣球(Free Air Ball,FAB)的金線等,且使用前端具有繞長度方向軸成旋轉對稱形的倒角(chamfer)部的毛細管作為工具。 The ball joint method uses a gold wire or the like which can form a free air ball (FAB) by a high voltage spark or the like, and uses a chamfer having a front end having a rotational symmetry about a longitudinal axis. The capillary of the part serves as a tool.

楔形接合方式是使用鋁線等且不形成FAB,並且不使用毛細管而使用前端具有金屬線導引器(wire guide)及按壓面的楔形接合用工具作為接合用工具。於楔形接合時,在工具前端,使金屬線沿金屬線導引器斜向地伸出至按壓面側,以按壓面將金屬線側面壓抵於接合對象物而進行接合。因此,成為於工具的前端處金屬線自按壓面橫向伸出的形式,且工具的前端並非為繞其長 度方向軸成旋轉對稱形(例如專利文獻3)。 In the wedge bonding method, an aluminum wire or the like is used, and the FAB is not formed, and a wedge bonding tool having a wire guide and a pressing surface at the tip end is used as a bonding tool without using a capillary. At the time of the wedge-shaped joining, the metal wire is obliquely extended to the pressing surface side along the wire guide at the tip end of the tool, and the metal wire side surface is pressed against the bonding object by the pressing surface to be joined. Therefore, it becomes a form in which the metal wire protrudes laterally from the pressing surface at the front end of the tool, and the front end of the tool is not long around it. The axis of the direction is rotationally symmetrical (for example, Patent Document 3).

由於楔形接合用工具的前端並非旋轉對稱形,故而因焊墊、導線的配置,而產生於該狀態下金屬線導引器的方向與金屬線的連接方向不一致的情況。因此,將保持工具的接合頭(bonding head)設為旋轉式(例如專利文獻4),或者使保持接合對象物的接合平台(bonding stage)旋轉。於是,提出有使用前端為旋轉對稱形的毛細管,且以毛細管前端按壓金屬線側面而進行接合的方法(例如專利文獻5)。 Since the tip end of the wedge-shaped joining tool is not rotationally symmetrical, the direction in which the wire guide is connected to the wire does not coincide with the arrangement of the pads and the wires. Therefore, the bonding head of the holding tool is set to a rotary type (for example, Patent Document 4), or the bonding stage holding the bonding object is rotated. Then, there has been proposed a method in which a capillary having a rotationally symmetrical shape at the distal end is used and the side surface of the metal wire is pressed by the distal end of the capillary to be joined (for example, Patent Document 5).

先前技術文獻 Prior technical literature

專利文獻 Patent literature

專利文獻1:日本專利第3335043號公報 Patent Document 1: Japanese Patent No. 3335043

專利文獻2:日本專利特開2000-306940號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2000-306940

專利文獻3:日本專利特開昭58-9332號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. SHO 58-9332

專利文獻4:日本專利特開昭55-7415號公報 Patent Document 4: Japanese Patent Laid-Open No. 55-7415

專利文獻5:美國專利申請案公開第2005/0167473號說明書 Patent Document 5: US Patent Application Publication No. 2005/0167473

於楔形接合方式中是使用延伸性小於金線的鋁線。因此,可能產生如下情況:於正常地進行第一接合點的打線後,使金屬線朝向第二接合點延出的中途金屬線被切斷。金屬線的未接合或切斷可藉由對接合對象物與金屬線之間賦予電氣訊號,根據該電氣訊號的響應而進行判斷。 In the wedge bonding method, an aluminum wire having an elongation less than a gold wire is used. Therefore, there is a case where the metal wire which extends the metal wire toward the second joint is cut after the wire bonding of the first joint is normally performed. The unbonding or cutting of the metal wire can be judged based on the response of the electrical signal by imparting an electrical signal between the bonding object and the metal wire.

該未接合或切斷的判斷是用於判斷在賦予超音波能量而進行接合形成處理之後是否正常地形成接合,因此通常於第一接合點或第二接合點處進行。如上所述,若於第一接合點與第二接合點之間金屬線被切斷,只要於第二接合點的接合處理之前進 行未接合判斷即可檢測到。但,若於使毛細管下降以進行第二接合點的接合處理時,因中途切斷而自毛細管突出的金屬線亦下降而接觸於接合對象物,則可能產生誤判斷為金屬線與接合對象物相接合的情況。 The judgment of the unjoining or cutting is for judging whether or not the joining is normally formed after the joining forming process is performed by imparting ultrasonic energy, and therefore it is usually performed at the first joint or the second joint. As described above, if the wire is cut between the first joint and the second joint, as long as the joining process of the second joint is advanced The line is unjoined and judged. However, when the capillary is lowered to perform the bonding process at the second bonding point, the metal wire protruding from the capillary is also lowered due to the cutting in the middle, and the object to be bonded is contacted, and the metal wire and the bonding object may be erroneously determined. The case of joining.

若於因該誤判斷而未檢測到金屬線被中途切斷的狀況下在第二接合點進行打線,則成為產生不良品的原因。 If the wire is not cut at the second joint in the case where the wire is not cut in the middle due to the erroneous determination, the defective product is caused.

本發明的目的在於提供一種可準確地判斷在第一接合點至第二接合點之間有無金屬線切斷的打線裝置以及打線方法。 An object of the present invention is to provide a wire bonding device and a wire bonding method capable of accurately determining whether or not a wire is cut between a first joint point and a second joint point.

本發明的打線裝置的特徵在於包括:第一接合處理部,於打線的第一接合點將接合對象物與金屬線之間進行接合;以及未接合監視部,於第一接合處理後,在規定的連續監視期間內對保持於毛細管的金屬線與接合對象物之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷金屬線與接合對象物之間的連接是否變化。 A wire bonding apparatus according to the present invention includes: a first bonding processing unit that bonds a bonding object and a metal line at a first bonding point of the wire bonding; and a non-joining monitoring portion that is specified after the first bonding process During the continuous monitoring period, a predetermined electrical signal is continuously applied between the metal wire held by the capillary and the object to be bonded, and based on the continuous response of the electrical signal, it is monitored and determined whether or not the connection between the metal wire and the object to be joined is changed.

另外,於本發明的打線裝置中,亦較佳為規定的連續監視期間是於第一接合處理後使金屬線自第一接合點延出至打線的第二接合點為止的期間。 Further, in the wire bonding device of the present invention, it is preferable that the predetermined continuous monitoring period is a period in which the wire is extended from the first joint to the second joint of the wire after the first joining process.

另外,於本發明的打線裝置中,亦較佳為未接合監視部是對保持於毛細管的金屬線與接合對象物之間施加規定的電氣訊號,並取得保持於毛細管的金屬線與接合對象物之間的電容值,於第一接合處理後電容值降低時,判斷為金屬線自接合對象物被切斷,於之後到達第二接合點之前電容值恢復時,判斷為被切斷 的金屬線垂下而接觸於接合對象物。 Further, in the wire bonding device of the present invention, it is preferable that the unbonding monitoring unit applies a predetermined electrical signal between the metal wire held by the capillary and the object to be bonded, and obtains the metal wire and the bonding object held by the capillary. When the capacitance value decreases after the first bonding process, it is determined that the metal wire is cut from the bonding target, and when the capacitance value is restored before reaching the second bonding point, it is determined that the capacitance value is cut off. The metal wire hangs down to contact the object to be joined.

另外,於本發明的打線裝置中,亦較佳為規定的電氣訊號為交流電氣訊號、直流脈波(pulse)訊號中的任一種訊號。 Further, in the wire bonding device of the present invention, it is preferable that the predetermined electrical signal is any one of an alternating current electrical signal and a direct current pulse signal.

另外,於本發明的打線裝置中,亦較佳為未接合監視部是基於將所取得的電容值對時間進行微分所得的微分值,而判斷關於電容值的降低與恢復。 Further, in the wire bonding device of the present invention, it is preferable that the unjoining monitoring unit determines the decrease and recovery of the capacitance value based on the differential value obtained by differentiating the obtained capacitance value with time.

另外,於本發明的打線裝置中,亦較佳為第一接合點及第二接合點的打線是以楔形接合方式進行。 Further, in the wire bonding device of the present invention, it is preferable that the wire bonding of the first bonding point and the second bonding point is performed by a wedge bonding method.

另外,本發明的打線方法的特徵在於包括:第一接合處理步驟,於打線的第一接合點將接合對象物與金屬線之間進行接合;連續監視步驟,於第一接合處理後,使金屬線自第一接合點延出至打線的第二接合點為止的期間內,對保持於毛細管的金屬線與接合對象物之間連續地施加規定的電氣訊號,並取得保持於毛細管的金屬線與接合對象物之間的電容值的變化;以及中途切斷判斷步驟,於第一接合處理後電容值降低時,判斷為金屬線被中途切斷,於之後到達第二接合點之前電容值恢復時,判斷為被中途切斷的金屬線垂下而接觸於接合對象物。 Further, the wire bonding method of the present invention is characterized by comprising: a first bonding processing step of bonding a bonding object and a metal line at a first bonding point of the bonding; a continuous monitoring step of causing a metal wire after the first bonding process A predetermined electric signal is continuously applied between the metal wire held by the capillary and the object to be bonded, and the wire and the wire held by the capillary are joined during the period from the first joint to the second joint of the wire. a change in the capacitance value between the objects; and a midway cutting determination step, when the capacitance value decreases after the first bonding process, it is determined that the metal wire is cut off halfway, and when the capacitance value is restored before reaching the second bonding point, It is determined that the metal wire cut by the middle is suspended and comes into contact with the object to be joined.

另外,於本發明的打線方法中,亦較佳為規定的電氣訊號為交流電氣訊號、直流脈波訊號中的任一種訊號。 In addition, in the wire bonding method of the present invention, it is preferable that the predetermined electrical signal is any one of an AC electrical signal and a DC pulse signal.

本發明的打線裝置包括:第一接合處理部,於打線的第一接合點將第一接合對象物與金屬線之間進行接合;線弧形成處理部,使金屬線一面自第一接合點延出至第二接合點而形成規定的線弧一面移動;第二接合處理部,於第二接合點將第二接合對象物與金屬線之間進行接合;以及未接合監視部,於自第一接合 處理前至第二接合之後的整個期間,對保持於毛細管的金屬線與保持第一接合對象物及第二接合對象物的接合平台之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷金屬線的連接狀態有無變化。 The wire bonding device of the present invention includes: a first bonding processing portion that bonds the first bonding object and the metal wire at the first bonding point of the wire bonding; and a wire arc forming processing portion that extends the metal wire from the first bonding point Moving to a second joint to form a predetermined line arc; the second joint processing portion joining the second joint object and the metal wire at the second joint; and the unjoining monitoring portion from the first joint The predetermined electrical signal is continuously applied between the metal wire held by the capillary and the bonding platform holding the first bonding object and the second bonding object, in the entire period from the pre-treatment to the second bonding, based on the continuity of the electrical signal. In response, it monitors and judges whether the connection state of the metal wire changes.

另外,於本發明的打線裝置中,亦較佳為未接合監視部是基於金屬線與接合平台之間的電容值的變化、或電氣短路有無的變化,而監視並判斷金屬線的連接狀態有無變化。 Further, in the wire bonding device of the present invention, it is preferable that the unbonding monitoring portion monitors and determines whether or not the connection state of the metal wire is based on a change in the capacitance value between the metal wire and the bonding platform or a change in the electrical short circuit. Variety.

另外,於本發明的打線裝置中,亦較佳為未接合監視部是將第一接合處理前的期間的連續響應的穩定值設為第一基準值,基於第一基準值而判斷第一接合點的金屬線與第一接合對象物之間的連接狀態有無變化,將第一接合處理完成時的連續響應的穩定值設為第二基準值,基於第二基準值而判斷線弧形成處理期間的金屬線的連接狀態有無變化,將線弧形成處理期間的連續響應的穩定值設為第三基準值,基於第三基準值而判斷第二接合點的金屬線與第二接合對象物之間的連接狀態有無變化,將第二接合處理完成時的連續響應的穩定值設為第四基準值,基於第四基準值而判斷自第二接合點至金屬線的切斷處理完成為止的期間的金屬線的連接狀態有無變化。 Further, in the wire bonding device of the present invention, it is preferable that the unjoining monitoring unit sets the stable value of the continuous response in the period before the first joining process to the first reference value, and determines the first joining based on the first reference value. Whether or not the connection state between the metal wire of the point and the first bonding object changes, the stable value of the continuous response when the first bonding process is completed is set to the second reference value, and the line arc forming process is judged based on the second reference value. Whether or not the connection state of the metal wire is changed, the stable value of the continuous response during the line arc forming process is set to a third reference value, and the wire between the second bonding point and the second bonding object is determined based on the third reference value. Whether or not the connection state is changed, the stable value of the continuous response when the second joining process is completed is set to the fourth reference value, and the period from the second joining point to the completion of the cutting process of the wire is determined based on the fourth reference value. There is no change in the connection state of the metal wires.

另外,於本發明的打線裝置中,亦較佳為未接合監視部是將接合平台的電位設為接地電壓值,且將具有與接地電壓值僅相差規定電壓值的電壓的直流電壓訊號作為規定的電氣訊號而施加於金屬線,將第一基準值設為規定電壓值,將第二基準值至第四基準值設為接地電壓值,而判斷金屬線的連接狀態有無變化。 Further, in the wire bonding device of the present invention, it is preferable that the unbonding monitoring unit sets the potential of the bonding platform to a ground voltage value, and specifies a DC voltage signal having a voltage different from the ground voltage value by a predetermined voltage value. The electric signal is applied to the metal wire, and the first reference value is set to a predetermined voltage value, and the second reference value to the fourth reference value are set to the ground voltage value, and it is determined whether or not the connection state of the metal wire is changed.

另外,於本發明的打線裝置中,亦較佳為第一接合點及 第二接合點的打線是以楔形接合方式或球形接合方式進行。 In addition, in the wire bonding device of the present invention, the first bonding point is also preferably The wire bonding of the second joint is performed by a wedge bonding method or a ball bonding method.

本發明的打線方法包括:第一接合處理步驟,將第一接合對象物與金屬線之間進行接合;線弧形成處理步驟,使金屬線一面自第一接合點延出至第二接合點而形成規定的線弧一面移動;第二接合處理步驟,於第二接合點將第二接合對象物與金屬線之間進行接合;以及未接合監視步驟,於自第一接合處理之前至第二接合之後的整個期間,對保持於毛細管的金屬線與保持第一接合對象物及第二對象物的接合平台之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷金屬線的連接狀態有無變化。 The wire bonding method of the present invention includes: a first bonding process step of bonding a first bonding object and a metal line; and a wire arc forming processing step of extending a wire side from the first bonding point to the second bonding point Forming a predetermined line arc to move while moving; a second bonding process step of bonding the second bonding object to the metal line at the second bonding point; and an unjoining monitoring step from before the first bonding process to after the second bonding During the entire period, a predetermined electrical signal is continuously applied between the metal wire held by the capillary and the bonding platform holding the first bonding object and the second object, and the metal wire is monitored and judged based on the continuous response of the electrical signal. There is no change in the connection status.

根據上述構成中的至少一種構成,可準確地判斷於第一接合點至第二接合點之間有無金屬線切斷。 According to at least one of the above configurations, it is possible to accurately determine whether or not the wire is cut between the first joint and the second joint.

根據上述構成中的至少一種構成,可於自第一接合處理至第二接合之後的整個期間,準確地判斷金屬線的連接狀態的變化。 According to at least one of the above configurations, it is possible to accurately determine the change in the connection state of the metal wires during the entire period from the first bonding process to the second bonding.

6‧‧‧半導體晶片 6‧‧‧Semiconductor wafer

8‧‧‧電路基板 8‧‧‧ circuit board

10‧‧‧打線裝置 10‧‧‧Wireing device

12‧‧‧台座 12‧‧‧ pedestal

14‧‧‧接合平台 14‧‧‧Joining platform

16‧‧‧XY平台 16‧‧‧XY platform

18‧‧‧接合頭 18‧‧‧ Bonding head

20‧‧‧Z向馬達 20‧‧‧Z-direction motor

22‧‧‧Z向驅動臂 22‧‧‧Z-direction drive arm

24‧‧‧超音波轉換器 24‧‧‧Ultrasonic Converter

26‧‧‧超音波振動器 26‧‧‧Ultrasonic vibrator

28‧‧‧毛細管 28‧‧‧ Capillary

30、31‧‧‧金屬線 30, 31‧‧‧ metal wire

32‧‧‧線夾 32‧‧‧Clamps

33‧‧‧線軸 33‧‧‧ spool

34‧‧‧夾具開閉部 34‧‧‧Clamp opening and closing department

36‧‧‧未接合判定電路 36‧‧‧Unjoined decision circuit

50‧‧‧窗式夾具 50‧‧‧window fixture

60‧‧‧電腦 60‧‧‧ computer

62‧‧‧XY平台I/F 62‧‧‧XY platform I/F

64‧‧‧Z向馬達I/F 64‧‧‧Z-direction motor I/F

66‧‧‧超音波振動器I/F 66‧‧‧Ultrasonic Vibrator I/F

68‧‧‧夾具開閉I/F 68‧‧‧Clamp opening and closing I/F

70‧‧‧未接合判定電路I/F 70‧‧‧Unjoined decision circuit I/F

80‧‧‧控制部 80‧‧‧Control Department

82‧‧‧記憶體 82‧‧‧ memory

84‧‧‧第一接合程式 84‧‧‧First joint program

86‧‧‧線弧形成程式 86‧‧‧Line arc forming program

88‧‧‧第二接合程式 88‧‧‧Second joint program

90‧‧‧未接合連續監視程式 90‧‧‧Unjoined continuous monitoring program

92‧‧‧切斷判定處理程式 92‧‧‧cut judgment handler

94‧‧‧異常輸出處理程式 94‧‧‧Exception output processing program

96‧‧‧控制程式 96‧‧‧Control program

98‧‧‧控制資料 98‧‧‧Control data

100‧‧‧第一接合點 100‧‧‧ first joint

102‧‧‧第二接合點 102‧‧‧second junction

104‧‧‧切斷狀態 104‧‧‧ cut off

105‧‧‧前端部 105‧‧‧ front end

106‧‧‧施加電源 106‧‧‧Power supply

108‧‧‧測定部 108‧‧‧Determination Department

CM、CL、CP‧‧‧電容值 C M , C L , C P ‧‧‧ Capacitance

F1‧‧‧第一接合點的金屬線的未接合 F1‧‧‧Unjoined wire of the first joint

F2‧‧‧線弧形成期間的金屬線的中途切斷 F2‧‧‧cutting of the metal wire during the formation of the arc

F3‧‧‧第二接合點的金屬線的未接合 F3‧‧‧ Unbonded metal wire at the second joint

F4‧‧‧第二接合處理後且金屬線切斷處理前的金屬線的中途切斷 F4‧‧‧After the second joining process and the cutting of the wire before the wire cutting process

C0~C2、T1~T3、t0~t15‧‧‧時間 C 0 ~ C 2 , T 1 ~ T 3 , t 0 ~ t 15 ‧ ‧ hours

J1‧‧‧第一基準值 J1‧‧‧ first reference value

J2‧‧‧第二基準值 J2‧‧‧ second reference value

J3‧‧‧第三基準值 J3‧‧‧ third reference value

J4‧‧‧第四基準值 J4‧‧‧ fourth reference value

S10~S22‧‧‧步驟 S10~S22‧‧‧Steps

V0‧‧‧電壓值 The voltage value V 0 ‧‧‧

X1~X3‧‧‧距離 X 1 ~X 3 ‧‧‧Distance

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

Z1~Z3‧‧‧高度 Z 1 ~Z 3 ‧‧‧ Height

圖1是本發明的實施方式的打線裝置的構成圖。 Fig. 1 is a configuration diagram of a wire bonding device according to an embodiment of the present invention.

圖2是繪示本發明的實施方式的打線裝置的未接合判定電路的圖。 2 is a view showing a non-joining determination circuit of the wire bonding device according to the embodiment of the present invention.

圖3是繪示本發明的實施方式的打線裝置的各構件的動作的時序圖。 3 is a timing chart showing the operation of each member of the wire bonding device according to the embodiment of the present invention.

圖4是繪示本發明的實施方式的打線方法的順序的流程圖。 4 is a flow chart showing the sequence of a wire bonding method according to an embodiment of the present invention.

圖5是繪示於本發明的實施方式的打線裝置中第一接合點至第二接合點之間的金屬線切斷的連續監視的圖。 Fig. 5 is a view showing continuous monitoring of wire cutting between a first joint point and a second joint point in the wire bonding apparatus according to the embodiment of the present invention.

圖6是繪示圖4中的第一接合處理的圖。 FIG. 6 is a view showing the first joining process of FIG. 4. FIG.

圖7是繪示於圖6之後的線弧形成處理中使金屬線延出的情況的圖。 Fig. 7 is a view showing a state in which a metal wire is extended in a line arc forming process subsequent to Fig. 6;

圖8是繪示於圖7之後產生金屬線切斷的情況的圖。 Fig. 8 is a view showing a state in which the wire is cut after Fig. 7;

圖9是繪示於圖8之後毛細管下降,被切斷的金屬線接觸於接合對象物的情況的圖。 Fig. 9 is a view showing a state in which the capillary is lowered after Fig. 8 and the cut metal wire is in contact with the object to be joined.

圖10是繪示於本發明的實施方式的打線裝置中,在自第一接合點至第二接合點之後的整個期間可能產生的金屬線的未接合、中途切斷的圖。 FIG. 10 is a view showing the wire which is likely to be generated during the entire period from the first joint to the second joint in the wire bonding apparatus according to the embodiment of the present invention.

圖11(a)至圖11(f)是繪示於本發明的實施方式的打線裝置中使用交流電氣訊號作為規定的電氣訊號時,產生金屬線的未接合、中途切斷時的毛細管與接合平台之間的電容值的變化的圖。 11(a) to 11(f) are diagrams showing the use of an alternating current electrical signal as a predetermined electrical signal in the wire bonding apparatus according to the embodiment of the present invention, in which the metal wire is unjoined, and the capillary and the joint are cut in the middle. A diagram of the change in capacitance between platforms.

圖12(a)至圖12(f)是繪示於本發明的實施方式的打線裝置中使用直流電壓訊號作為規定的電氣訊號時,產生金屬線的未接合、中途切斷時的毛細管與接合平台之間的電壓值的變化的圖。 12(a) to 12(f) are diagrams showing the use of a DC voltage signal as a predetermined electrical signal in the wire bonding apparatus according to the embodiment of the present invention, in which the metal wire is unjoined, and the capillary and the joint are cut in the middle. A graph of changes in voltage values between platforms.

以下,使用圖式詳細地說明本發明的實施方式。以下,作為打線的對象物,於第一接合點設為電路基板的導線、於第二接合點設為半導體晶片的焊墊而進行敍述,但該情況為用於說明的例示,亦可將第一接合點設為半導體晶片的焊墊,將第二接合 點設為電路基板的導線。亦可將第一接合點與第二接合點均設為半導體晶片的焊墊,且亦可將第一接合點與第二接合點均設為電路基板的導線。焊墊、導線為接合金屬線的對象物的例示,亦可為除此以外者。另外,作為接合的對象物,除半導體晶片以外,亦可為電阻晶片、電容器晶片(condenser chip)等一般的電子零件,作為電路基板,除環氧樹脂基板等以外,亦可為導線架(lead frame)等。 Hereinafter, embodiments of the present invention will be described in detail using the drawings. Hereinafter, the object to be wired is described as a wire of the circuit board at the first joint and a pad of the semiconductor wafer at the second joint. However, this case is an example for explanation, and the A bonding point is set as a solder pad of the semiconductor wafer, and the second bonding is performed The point is set to the wire of the circuit substrate. The first bonding point and the second bonding point may both be used as pads of the semiconductor wafer, and the first bonding point and the second bonding point may also be used as the wires of the circuit substrate. The pad or the wire is an example of an object to which the wire is bonded, and may be other than the above. In addition to the semiconductor wafer, a general electronic component such as a resistor chip or a capacitor chip may be used as the substrate to be bonded, and a lead frame may be used as a circuit board in addition to the epoxy resin substrate or the like. Frame) and so on.

以下所述的尺寸、材質等為用於說明的例示,可根據打線裝置的規格而適當變更。 The dimensions, materials, and the like described below are exemplified for explanation, and can be appropriately changed according to the specifications of the wire bonding device.

以下,於所有圖式中,對於一或對應的元件構件標附相同的符號,並省略重複的說明。 In the following, in the drawings, the same reference numerals are given to the one or the corresponding component members, and the repeated description is omitted.

圖1是打線裝置10的構成圖。該打線裝置10為如下裝置:使用毛細管28作為打線用工具,使用鋁線作為金屬線30,以楔形接合方式利用金屬線30連接兩個接合對象物。於圖1中,作為接合對象物的半導體晶片6及電路基板8雖並非打線裝置10的構成構件但予以示出。此外,於本發明的實施方式中,所謂楔形接合方式是指未於金屬線前端形成FAB,而使用超音波、壓力進行的接合方式。 FIG. 1 is a configuration diagram of the wire bonding device 10. The wire bonding device 10 is a device that uses a capillary tube 28 as a wire bonding tool, uses an aluminum wire as the wire 30, and connects the two bonding objects by the wire bonding method by a wedge bonding method. In FIG. 1, the semiconductor wafer 6 and the circuit board 8 which are bonding objects are not shown as constituent members of the wire bonding device 10. Further, in the embodiment of the present invention, the wedge bonding method refers to a bonding method in which the FAB is not formed at the tip end of the metal wire and ultrasonic waves and pressure are used.

打線裝置10構成為包括保持於台座12的接合平台14、XY平台16及電腦60。 The wire bonding device 10 is configured to include a bonding platform 14 held by the pedestal 12, an XY stage 16, and a computer 60.

接合平台14是搭載作為兩個接合對象物的半導體晶片6與電路基板8的接合對象物保持台。接合平台14雖然於搭載或排出電路基板8等時可相對於台座12進行移動,但於接合處理期間相對於台座12設為固定狀態。作為該接合平台14,可使用金屬 製移動載台(table)。接合平台14連接於打線裝置10的接地電位等基準電位。接合平台14連接於後述的未接合判定電路36的接地側端子。於需要與半導體晶片6或電路基板8之間絕緣的情況下,對接合平台14的必要部分進行絕緣處理。 The bonding stage 14 is a bonding object holding stage on which the semiconductor wafer 6 and the circuit board 8 as two bonding objects are mounted. The bonding stage 14 is movable relative to the pedestal 12 when the circuit board 8 or the like is mounted or discharged, but is fixed to the pedestal 12 during the bonding process. As the joint platform 14, metal can be used Make a mobile table. The bonding platform 14 is connected to a reference potential such as a ground potential of the wire bonding device 10. The bonding platform 14 is connected to a ground-side terminal of the unjoined determination circuit 36 to be described later. In the case where it is necessary to insulate between the semiconductor wafer 6 or the circuit substrate 8, the necessary portion of the bonding stage 14 is insulated.

半導體晶片6是於矽基板將電晶體(transistor)等集成化製成電子電路而成,作為電子電路的輸入端子與輸出端子等是作為多個焊墊(未繪示)被引出至半導體晶片6的上表面。半導體晶片6的下表面為矽基板的背面,且設為電子電路的接地電極。 The semiconductor wafer 6 is formed by integrating a transistor or the like into an electronic circuit on a germanium substrate, and is input as an input terminal, an output terminal, or the like of the electronic circuit to the semiconductor wafer 6 as a plurality of pads (not shown). Upper surface. The lower surface of the semiconductor wafer 6 is the back surface of the germanium substrate, and is set as the ground electrode of the electronic circuit.

電路基板8是於環氧樹脂基板圖案化所期望的配線而成,且包括:晶片焊墊(未繪示),電性及機械性連接並固定半導體晶片6的下表面;多根導線(未繪示),配置於晶片焊墊的周圍;以及作為電路基板的輸入端子及輸出端子,自晶片焊墊或多根導線引出而成。打線是藉由將半導體晶片6的焊墊與電路基板8的導線之間以金屬線30連接而進行。 The circuit board 8 is formed by patterning a desired wiring on the epoxy substrate, and includes: a wafer pad (not shown) electrically and mechanically connecting and fixing the lower surface of the semiconductor wafer 6; and a plurality of wires (not The display terminal is disposed around the wafer pad; and the input terminal and the output terminal of the circuit substrate are drawn from the die pad or the plurality of wires. The wire bonding is performed by connecting the pads of the semiconductor wafer 6 and the wires of the circuit substrate 8 with the wires 30.

設置於接合平台14的窗式夾具(window clamper)50是於中央部具有開口的平板狀構件,且是保持電路基板8的構件。窗式夾具50是以於中央部的開口中配置被進行打線的電路基板8的導線與半導體晶片6的方式進行定位,藉由以開口的周緣部壓住電路基板8,而將電路基板8固定於接合平台14。 The window clamper 50 provided on the joining platform 14 is a flat member having an opening at the center portion, and is a member that holds the circuit board 8. The window clamp 50 is configured such that the lead wire of the circuit board 8 to be wired is placed in the opening of the center portion and the semiconductor wafer 6 is placed, and the circuit board 8 is pressed by the peripheral portion of the opening to fix the circuit board 8 Engaged in the platform 14.

XY平台16是搭載接合頭18,使接合頭18相對於台座12及接合平台14而移動至XY平面內的所期望的位置的移動台。XY平面為與台座12的上表面平行的平面。Y方向是與後述的安裝於接合臂(bonding arm)(未繪示)的超音波轉換器(transducer)24的長度方向平行的方向。圖1中示出有X方向、Y方向、及與 XY平面垂直的方向即Z方向。 The XY stage 16 is a moving stage on which the bonding head 18 is mounted and the bonding head 18 is moved to a desired position in the XY plane with respect to the pedestal 12 and the bonding stage 14. The XY plane is a plane parallel to the upper surface of the pedestal 12. The Y direction is a direction parallel to the longitudinal direction of the ultrasonic transducer 24 attached to a bonding arm (not shown) to be described later. Figure 1 shows the X direction, the Y direction, and The direction perpendicular to the XY plane is the Z direction.

接合頭18是固定並搭載於XY平台16,內置有Z向馬達(motor)20,且藉由該Z向馬達的旋轉控制,經由Z向驅動臂22、超音波轉換器24而使毛細管28沿Z方向移動的移動機構。作為z向馬達20,可使用線性馬達(linear motor)。 The bonding head 18 is fixed and mounted on the XY stage 16, and has a Z-direction motor 20, and by the rotation control of the Z-direction motor, the capillary 28 is moved along the Z-direction driving arm 22 and the ultrasonic transducer 24. A moving mechanism that moves in the Z direction. As the z-direction motor 20, a linear motor can be used.

Z向驅動臂22是安裝有超音波轉換器24及線夾32,且藉由Z向馬達20的旋轉控制,而可繞設置於接合頭18的旋轉中心旋轉的構件。設置於接合頭18的旋轉中心並非必須為Z向馬達20的輸出軸,可考慮包含Z向驅動臂22、超音波轉換器24、線夾32在內的整體的重心位置,而設定於減輕旋轉負荷的位置。 The Z-direction drive arm 22 is a member to which the ultrasonic transducer 24 and the clamp 32 are attached and which is rotatable about the rotation center of the joint head 18 by the rotation control of the Z-direction motor 20. The center of rotation of the joint head 18 is not necessarily the output shaft of the Z-direction motor 20, and the entire center of gravity position including the Z-direction drive arm 22, the ultrasonic transducer 24, and the clamp 32 can be considered, and the rotation is set to be reduced. The location of the load.

超音波轉換器24是根部安裝於Z向驅動臂22,且於前端部安裝有插入金屬線30的毛細管28的細長的棒構件。於超音波轉換器24安裝有超音波振動器26,將藉由驅動超音波振動器26而產生的超音波能量傳遞至毛細管28。因此,超音波轉換器24是以可將來自超音波振動器26的超音波能量高效率地傳遞至毛細管28的方式,形成為越往前端側變得越細的喇叭(horn)形狀。作為超音波振動器26是使用壓電元件。 The ultrasonic transducer 24 is an elongated rod member in which a root portion is attached to the Z-direction driving arm 22, and a capillary tube 28 into which the metal wire 30 is inserted is attached to the distal end portion. The ultrasonic transducer 26 is mounted on the ultrasonic transducer 24, and the ultrasonic energy generated by driving the ultrasonic vibrator 26 is transmitted to the capillary 28. Therefore, the ultrasonic transducer 24 is formed in such a manner that the ultrasonic energy from the ultrasonic vibrator 26 can be efficiently transmitted to the capillary 28, and is formed into a horn shape that becomes thinner toward the distal end side. As the ultrasonic vibrator 26, a piezoelectric element is used.

毛細管28是前端面平坦的圓錐體,且是於中心部具有可將金屬線30沿長度方向插入的貫通孔的接合工具。作為該毛細管28,可直接使用球形接合中所使用的陶瓷製毛細管。球形接合中所使用的毛細管是以容易保持FAB的方式於貫通孔的前端面側設置有適當的被稱為倒角的角部形狀,而於本實施方式的楔形接合方式中是使用球形接合用的毛細管,且於該毛細管的貫通孔的前端面側的下表面具有被稱為工作面(face)的平面。該工作面成 為於打線裝置10中進行楔形接合時的按壓面。 The capillary tube 28 is a cone having a flat front end surface and a through hole having a through hole in the center portion into which the metal wire 30 can be inserted in the longitudinal direction. As the capillary tube 28, a ceramic capillary tube used in the spherical bonding can be used as it is. The capillary used in the spherical joint is provided with a suitable corner shape called chamfering on the distal end surface side of the through hole so that the FAB can be easily held, and in the wedge bonding method of the present embodiment, the spherical joint is used. The capillary has a flat surface called a face on the lower surface of the front end side of the through hole of the capillary. The working face The pressing surface is used for the wedge bonding in the wire bonding device 10.

楔形接合用工具是包括於前端部具有相對於長度方向傾斜地設置的金屬線導引器、及用以按壓金屬線的側面的按壓面,因此並非為繞工具的長度方向軸成旋轉對稱,而是金屬線具有沿金屬線導引器的方向的方向性而會朝橫方向突出。若使用此種楔形接合用工具,因導線、焊墊的配置,而會產生於該狀態下金屬線導引器的方向與金屬線的連接方向不一致的情況。 The wedge bonding tool includes a wire guide that is disposed at an inclination of the front end portion with respect to the longitudinal direction, and a pressing surface for pressing the side surface of the wire. Therefore, the tool is not rotationally symmetrical about the longitudinal direction of the tool, but is The metal wire has a directivity in the direction of the wire guide and protrudes in the lateral direction. When such a wedge bonding tool is used, the direction of the wire guide and the direction in which the wires are connected may not coincide with each other due to the arrangement of the wires and the pads.

例如,於電路基板8的中央部搭載有半導體晶片6,以沿半導體晶片6的周邊部繞一周的方式配置有多個焊墊,於電路基板8亦以沿半導體晶片6的外側繞一周的方式設置有多根導線,於上述情況下,連結導線與焊墊的金屬線的連接方向根據多種打線的每一種而各有不同。為使金屬線導引器的方向與金屬線的連接方向一致,必須使楔形接合用工具繞長度方向軸旋轉、或使電路基板8旋轉。 For example, the semiconductor wafer 6 is mounted on the central portion of the circuit board 8, and a plurality of pads are arranged around the peripheral portion of the semiconductor wafer 6, and the circuit board 8 is also wound around the outside of the semiconductor wafer 6. A plurality of wires are provided. In the above case, the connection direction of the wires connecting the wires to the pads varies according to each of the plurality of wires. In order to make the direction of the wire guide coincide with the direction in which the wires are connected, it is necessary to rotate the wedge bonding tool about the longitudinal axis or to rotate the circuit board 8.

相對於此,由於毛細管28的前端面側的工作面為繞毛細管28的長度方向軸成旋轉對稱的形狀,故而即便連結焊墊與導線的金屬線的連接方向根據每種打線而各有不同,亦僅需進行將自毛細管28的前端突出的金屬線30的方向稍許變更的整形處理即可解決。因此,將毛細管28用於楔形接合。 On the other hand, since the working surface on the distal end surface side of the capillary tube 28 has a rotationally symmetrical shape about the longitudinal direction of the capillary tube 28, the connection direction of the metal wire connecting the bonding pad and the lead wire varies depending on each type of wire. It is also only necessary to perform a shaping process in which the direction of the metal wire 30 protruding from the tip end of the capillary 28 is slightly changed. Therefore, the capillary 28 is used for wedge engagement.

插入至毛細管28中的金屬線30為鋁的細線。金屬線30捲繞於在自接合頭18延伸的金屬線支持器(wire holder)的前端所設置的線軸(wire spool)33上,且自線軸33經由線夾32插入至毛細管28的中心部的貫通孔中,而自毛細管28的前端突出。作為該金屬線30的材質,除純鋁細線以外,可使用適當地混合有 矽、鎂等的細線等。金屬線30的直徑可根據接合對象物而進行選擇。列舉金屬線30的直徑的一例為30μm。 The metal wire 30 inserted into the capillary 28 is a thin wire of aluminum. The wire 30 is wound around a wire spool 33 provided at the front end of a wire holder extending from the bonding head 18, and is inserted from the bobbin 33 to the center portion of the capillary 28 via the wire clamp 32. The through hole protrudes from the front end of the capillary 28. As the material of the metal wire 30, in addition to the pure aluminum thin wire, it may be appropriately mixed. Fine lines such as bismuth and magnesium. The diameter of the wire 30 can be selected in accordance with the object to be joined. An example of the diameter of the metal wire 30 is 30 μm.

線夾32是安裝於Z向驅動臂22,且利用配置於金屬線30的兩側的一組夾板,藉由將相對向的夾板之間打開而使金屬線30為自由移動狀態,藉由將相對向的夾板之間閉合而使金屬線30的移動停止的金屬線夾持裝置。由於線夾32安裝於Z向驅動臂22,故而即便毛細管28沿XYZ方向移動,亦可適當地夾持金屬線30。線夾32的開閉是藉由使用壓電元件的夾具開閉部34的運作而進行。 The clip 32 is mounted on the Z-direction drive arm 22, and the metal wire 30 is freely moved by opening a pair of splints disposed on opposite sides of the metal wire 30 by using a pair of splints disposed on opposite sides of the metal wire 30. A wire holding device that closes the opposing plates to stop the movement of the wire 30. Since the clip 32 is attached to the Z-direction drive arm 22, the metal wire 30 can be appropriately held even if the capillary 28 is moved in the XYZ direction. The opening and closing of the clip 32 is performed by the operation of the jig opening and closing portion 34 using the piezoelectric element.

未接合判定電路36是於打線的各階段判定接合對象物與金屬線30之間的連接是否適當的電路。未接合判定電路36是對接合對象物與金屬線30之間施加規定的電氣訊號,並基於該電氣訊號的響應而判定接合對象物與金屬線30之間的連接是否適當。 The unjoining determination circuit 36 is a circuit that determines whether or not the connection between the bonding target and the metal wire 30 is appropriate at each stage of the wire bonding. The unjoining determination circuit 36 applies a predetermined electrical signal between the bonding object and the metal wire 30, and determines whether or not the connection between the bonding object and the metal wire 30 is appropriate based on the response of the electrical signal.

圖2是未接合判定電路36的構成圖。此處,圖2是表示如下情況的圖:確認到於第一接合點100已適當地進行打線,之後經過線弧形成處理步驟,而轉移至第二打線處理步驟,且確認到第二打線處理步驟亦於第二接合點102已適當地進行打線,接著,適當地進行金屬線切斷處理,從而於第二接合點102,金屬線30成為切斷狀態104。如上所述是示出正常地進行打線的各處理步驟的情形。 FIG. 2 is a configuration diagram of the unjoined determination circuit 36. Here, FIG. 2 is a view showing a case where it is confirmed that the first bonding point 100 has been properly wired, and then passes through the line arc forming processing step, and shifts to the second wire bonding processing step, and the second wire bonding process is confirmed. In the step, the second bonding point 102 is appropriately wired, and then the metal wire cutting process is appropriately performed, so that the metal wire 30 is turned off at the second bonding point 102. As described above, the case where the respective processing steps of the wire bonding are normally performed is shown.

未接合判定電路36包括施加電源106及測定部108,且其中一端子連接於接合平台14,另一端子連接於線夾32或線軸33。將施加電源106作為交流電壓電源,於測定部108的內部利 用未繪示的阻抗測定電路測定阻抗值,藉此可知金屬線30與接合平台14之間的電容成分。此外,亦可使用直流脈波電源代替交流電壓電源而作為施加電源106。以下,將施加電源106設為交流電壓電源繼續進行說明。 The unjoined determination circuit 36 includes an application power source 106 and a measuring portion 108, and one of the terminals is connected to the bonding platform 14, and the other terminal is connected to the wire holder 32 or the bobbin 33. The power source 106 is applied as an AC voltage source, and is internally provided in the measuring unit 108. The impedance value is measured by an impedance measuring circuit not shown, whereby the capacitance component between the metal wire 30 and the bonding stage 14 is known. Alternatively, a DC pulse power source may be used instead of the AC voltage source as the application power source 106. Hereinafter, the description will be continued by using the applied power source 106 as an AC voltage source.

於金屬線30為與電路基板8的導線或半導體晶片6的焊墊連接的狀態時,線夾32與接合平台14之間的電容成分的值成為打線裝置10的構件的電容值即裝置電容值、與電路基板8或半導體晶片6的電容值即器件電容值的合計值。相對於此,於金屬線30為切斷狀態104時,金屬線30與電路基板8或半導體晶片6之間成為電性開路狀態,因此線夾32與接合平台14之間的電容成分的值僅為裝置電容值。未接合判定電路36基於測定部108中的電容成分的變化,而可判定金屬線30與作為接合對象物的電路基板8或半導體晶片6之間為連接狀態抑或為開路狀態。 When the metal wire 30 is in a state of being connected to the lead of the circuit board 8 or the pad of the semiconductor wafer 6, the value of the capacitance component between the clip 32 and the bonding stage 14 becomes the capacitance value of the member of the wire bonding device 10, that is, the device capacitance value. The total value of the capacitance value of the circuit board 8 or the semiconductor wafer 6, that is, the device capacitance value. On the other hand, when the metal wire 30 is in the cut-off state 104, the metal wire 30 and the circuit board 8 or the semiconductor wafer 6 are electrically opened, and therefore the capacitance component between the wire clip 32 and the bonding stage 14 is only Is the device capacitance value. The unjoining determination circuit 36 determines whether the metal wire 30 is connected to the circuit board 8 or the semiconductor wafer 6 as the bonding target or is in an open state based on the change in the capacitance component in the measuring unit 108.

如圖2所示,於正常地進行打線的各處理步驟時,未接合判定電路36於各處理步驟中以如下方式進行判定。於第一接合點100的第一打線處理後,根據線夾32或線軸33與接合平台14之間的電容值成為裝置電容值與器件電容值的合計值,而判定金屬線30與電路基板8之間為連接狀態。於毛細管28朝向第二接合點102下降,而金屬線30接觸於第二接合點102時,亦根據線夾32與接合平台14之間的電容值成為裝置電容值與器件電容值的合計值,而判定金屬線30與電路基板8之間為連接狀態。 As shown in FIG. 2, in the respective processing steps of the wire bonding, the unjoining determination circuit 36 performs the determination in the following manner in each processing step. After the first wire bonding process of the first bonding point 100, the capacitance value between the wire clamp 32 or the bobbin 33 and the bonding platform 14 becomes the total value of the device capacitance value and the device capacitance value, and the metal wire 30 and the circuit substrate 8 are determined. The connection state is between. When the capillary 28 is lowered toward the second junction 102, and the metal line 30 is in contact with the second junction 102, the capacitance value between the clamp 32 and the bonding platform 14 is also the total value of the device capacitance value and the device capacitance value. Further, it is determined that the metal line 30 and the circuit board 8 are in a connected state.

於第二接合點102的第二打線處理後,根據線夾32與接合平台14之間成為裝置電容值與器件電容值的合計值,而判定金屬線30與半導體晶片6之間為連接狀態。於金屬線切斷處理 後,根據線夾32與接合平台14之間的電容值成為裝置電容值的值,而判定金屬線30與半導體晶片6之間為切斷狀態。 After the second wire bonding process of the second bonding point 102, the connection state between the metal wire 30 and the semiconductor wafer 6 is determined based on the total value of the device capacitance value and the device capacitance value between the wire clamp 32 and the bonding platform 14. Wire cutting treatment Thereafter, the capacitance value between the wire clamp 32 and the bonding stage 14 becomes a value of the device capacitance value, and it is determined that the metal wire 30 and the semiconductor wafer 6 are in a disconnected state.

再次返回至圖1,電腦60將打線裝置10的各構件的動作以整體進行控制。電腦60構成為包括為中央處理單元(Central Processing Unit,CPU)的控制部80、各種介面(interface)電路及記憶體(memory)82。該些部分相互以內部匯流排(bus)連接。 Returning again to Fig. 1, the computer 60 controls the operations of the respective members of the wire bonding device 10 as a whole. The computer 60 is configured to include a control unit 80 as a central processing unit (CPU), various interface circuits, and a memory 82. The parts are connected to each other by an internal bus.

各種介面電路是設置於為CPU的控制部80與打線裝置10的各構件之間的驅動電路或緩衝(buffer)電路。於圖1中,將介面電路僅表示為I/F。各種介面電路為連接於XY平台16的XY平台I/F62、連接於Z向馬達20的Z向馬達I/F64、連接於超音波振動器26的超音波振動器I/F66、連接於夾具開閉部34的夾具開閉I/F68、連接於未接合判定電路36的未接合判定電路I/F70。 Each of the interface circuits is a drive circuit or a buffer circuit provided between the control unit 80 of the CPU and each member of the wire bonding device 10. In Figure 1, the interface circuit is shown only as I/F. The various interface circuits are an XY stage I/F 62 connected to the XY stage 16, a Z-direction motor I/F 64 connected to the Z-direction motor 20, an ultrasonic vibrator I/F 66 connected to the ultrasonic vibrator 26, and connected to the clamp opening and closing. The jig opening/closing I/F 68 of the portion 34 and the unjoining determination circuit I/F 70 connected to the unjoined determination circuit 36.

記憶體82是儲存各種程式(program)及各種控制資料(data)的記憶裝置。各種程式為關於第一打線處理的第一接合程式84、關於線弧形成處理的線弧形成程式86、關於第二打線處理的第二接合程式88、關於利用未接合判定電路36進行的連續監視處理的未接合連續監視程式90、關於金屬線30的中途切斷的判定處理的切斷判定處理程式92、關於表示產生金屬線30的中途切斷的異常訊號輸出的異常輸出處理程式94、關於其他控制處理的控制程式96。控制資料98為於執行各種程式或控制程式時必需的資料等。 The memory 82 is a memory device that stores various programs and various control data. The various programs are the first bonding program 84 for the first wire bonding process, the wire arc forming program 86 for the line arc forming process, the second bonding program 88 for the second wire bonding process, and the continuous monitoring with the unjoining determination circuit 36. The disconnected continuous monitoring program 90 for processing, the disconnection determination processing program 92 for determining the middle of the disconnection of the metal wire 30, and the abnormality output processing program 94 for outputting the abnormal signal output for the middle of the disconnection of the metal wire 30, Other control programs that control processing 96. The control data 98 is necessary for executing various programs or controlling programs.

使用圖3及之後的圖對上述構成的作用、尤其是電腦60的各功能進而詳細地進行說明。圖3是表示打線處理中的各構件的動作的時序圖。圖4是表示打線方法的順序的流程圖。圖5是 將關於第一接合點至第二接合點之間的未接合監視的各訊號與毛細管28的動作建立關聯而表示的時序圖。圖6至圖9是分別表示第一接合點至第二接合點之間的金屬線的狀態的圖。 The function of the above configuration, in particular, the functions of the computer 60 will be described in detail with reference to FIG. 3 and subsequent figures. FIG. 3 is a timing chart showing the operation of each member in the wire bonding process. Fig. 4 is a flow chart showing the procedure of the wire bonding method. Figure 5 is A timing chart is shown in association with the respective signals of the unjoined monitoring between the first joint point and the second joint point in association with the action of the capillary tube 28. 6 to 9 are views each showing a state of a metal wire between the first joint point and the second joint point.

圖3是表示自第一接合點100的第一打線處理經過線弧形成處理,直至進行第二接合點102的第二打線處理及金屬線切斷為止的各構件的動作狀態的時序圖。圖3的橫軸為時間。圖3的縱軸自上段側朝向下段側依序表示毛細管28的高度狀態、Z向馬達20為動作狀態或停止狀態、XY平台16為動作狀態或停止狀態、超音波振動器26為動作狀態或停止狀態、將毛細管28向下方壓抵的壓抵力的大小、線夾32為閉合狀態或打開狀態。 3 is a time chart showing an operation state of each member until the second wire bonding process and the wire wire cutting of the second bonding point 102 are performed by the first wire bonding process from the first bonding point 100. The horizontal axis of Fig. 3 is time. The vertical axis of FIG. 3 sequentially indicates the height state of the capillary 28 from the upper stage side toward the lower stage side, the Z-direction motor 20 is in an operating state or a stopped state, the XY stage 16 is in an operating state or a stopped state, and the ultrasonic vibrator 26 is in an operating state or The stop state, the magnitude of the pressing force that presses the capillary 28 downward, and the clamp 32 are in a closed state or an open state.

毛細管28的高度狀態於Z向馬達20為動作狀態時產生變化,於Z向馬達20為停止狀態時不產生變化。Z向馬達20的動作與停止的控制是藉由如下方式進行:於控制部80執行各種程式時,若有Z向馬達20的動作命令,則經由Z向馬達I/F64而驅動Z向馬達20,若有停止命令,則停止該動作。毛細管28除高度狀態的變化以外,亦藉由在XY平面內移動,而使該XY平面內的位置狀態產生變化。毛細管28的XY平面內的移動的控制是藉由如下方式進行:於控制部80執行各種程式時,若有XY平台16的移動命令,則經由XY平台I/F62而移動驅動XY平台16,若有停止命令,則停止該移動驅動。 The height state of the capillary 28 changes when the Z-direction motor 20 is in the operating state, and does not change when the Z-direction motor 20 is in the stopped state. The control of the operation and the stop of the Z-direction motor 20 is performed by driving the Z-direction motor 20 via the Z-direction motor I/F 64 when the control unit 80 executes various programs. If there is a stop command, stop the action. In addition to the change in the height state, the capillary tube 28 also changes the positional state in the XY plane by moving in the XY plane. The control of the movement of the capillary 28 in the XY plane is performed by the control unit 80 executing the various programs, and if there is a movement command of the XY stage 16, the XY stage 16 is moved and driven via the XY stage I/F 62. If there is a stop command, the mobile drive is stopped.

於毛細管28位於第一接合點100與第二接合點102時,自超音波振動器26對毛細管28供給超音波能量。來自超音波振動器26的超音波能量供給的控制是藉由如下方式進行:於控制部80執行各種程式時,若有超音波振動器26的運作命令,則經由超 音波振動器I/F66而使超音波振動器26運作,若有停止命令,則停止該運作。 When the capillary 28 is located at the first joint 100 and the second joint 102, ultrasonic energy is supplied from the ultrasonic vibrator 26 to the capillary 28. The control of the ultrasonic energy supply from the ultrasonic vibrator 26 is performed by the control unit 80 executing various programs, and if there is an operation command of the ultrasonic vibrator 26, The ultrasonic vibrator I/F 66 operates the ultrasonic vibrator 26, and if there is a stop command, the operation is stopped.

於毛細管28位於第一接合點100與第二接合點102時,經由超音波轉換器24而對毛細管28賦予規定的壓抵力。壓抵力的大小的控制可作為Z向馬達20的驅動控制的一部分而進行。即,於控制部80執行各種程式時,若有壓抵力變更命令,則經由Z向馬達I/F64,藉由Z向馬達20的驅動控制而進行壓抵力的變更。 When the capillary 28 is positioned at the first joint 100 and the second joint 102, the capillary 28 is given a predetermined pressing force via the ultrasonic transducer 24. The control of the magnitude of the pressing force can be performed as part of the drive control of the Z-direction motor 20. In other words, when the control unit 80 executes various programs, if there is a pressing force change command, the Z-direction motor I/F 64 is controlled by the Z-direction motor 20 to control the pressing force.

於線弧形成處理或金屬線切斷處理中,當使金屬線30自毛細管28延出時打開線夾32,當停止金屬線30的延出而進行夾持時閉合線夾32。線夾32的開閉控制是藉由如下方式進行:於控制部80執行各種程式時,若有線夾32的打開動作命令,則經由夾具開閉I/F68而使夾具開閉部34打開線夾32,若有閉合動作命令,則使夾具開閉部34閉合線夾32。 In the wire arc forming process or the wire cutting process, the wire clamp 32 is opened when the wire 30 is extended from the capillary 28, and the wire clamp 32 is closed when the wire 30 is stopped and the clamping is performed. When the control unit 80 executes various programs, when the control unit 80 executes various programs, when the wire clamp 32 is opened, the I/F 68 is opened and closed by the clamp, and the clamp opening/closing unit 34 is opened to open the clamp 32. With the closing action command, the clamp opening and closing portion 34 closes the clamp 32.

於圖3中,時間t0至時間t4為第一打線處理步驟期間,於該期間內,控制部80執行第一接合程式84。如圖3所示,於時間t0至時間t1的期間內,對XY平台16進行移動驅動,使毛細管28移動至第一接合點的正上方。自時間t0至時間t3,Z向馬達20被驅動,藉此毛細管28持續下降。關於下降,自時間t0至毛細管28移動至第一接合點100的正上方的時間t1為高速下降,於時間t1至毛細管28接觸於電路基板8的導線的時間t3之間是設為低速。該低速下降被稱為第一搜尋(first search)。 In FIG. 3, the time t 0 to the time t 4 are the first wire bonding processing steps, during which the control unit 80 executes the first bonding program 84. 3, at time t 0 to time t just above the 1 period, for driving the XY stage 16 is moved, the capillary 28 is moved to the first point of engagement. From time t 0 to time t 3 , the Z is driven to the motor 20, whereby the capillary 28 continues to descend. About decreases from time t 0 to time directly above the capillary 28 is moved to the point of 100 t 1 of the first high-speed engagement fall at times t 1 to time in the capillary tube 28 contacts the circuit substrate 8 wire 3 is disposed between t For low speed. This low speed drop is called the first search.

於時間t3至時間t4之間,XY平台16與Z向馬達20均為停止狀態,於該期間內,超音波振動器26運作而對毛細管28 賦予超音波能量。壓抵力於時間t1至超音波振動器26的運作開始前後的時間之間階段性地變化。如此,於時間t3至時間t4之間,於第一接合點100,在毛細管28的前端與電路基板8的導線之間夾著自毛細管28的前端突出的金屬線30,且藉由超音波能量及壓抵力而進行金屬線30與導線之間的接合。於該接合處理期間,接合平台14較佳為被加熱維持在適當的處理溫度。 At time t between time t. 3 to 4, XY stage 16 and the Z-direction motor 20 are stopped, in this period, the operation of the ultrasonic vibrator 26 to impart ultrasonic energy to the capillary tube 28. The pressing force changes stepwise between the time t 1 and the time before and after the start of the operation of the ultrasonic vibrator 26 . Thus, at time t between time t. 3 to 4, the first joint 100, between the wire and the tip of the capillary 28 of the circuit board 8 interposed therebetween protrudes from the distal end 30 of the capillary 28 of the metal wire, and by ultra The bonding between the wire 30 and the wire is performed by the sonic energy and the pressing force. During the bonding process, the bonding platform 14 is preferably heated to maintain the appropriate processing temperature.

於圖3中,時間t4至時間t10為線弧形成處理步驟的期間。此時,壓抵力復原。於該期間內,控制部80執行線弧形成程式86。如圖3所示,於時間t4至時間t5之間僅Z向馬達20被驅動,藉此毛細管28略微上升。於時間t5至時間t6之間,僅XY平台16被移動驅動。該移動驅動是以於XY平面內,毛細管28自第一接合點100暫時向第二接合點102的相反側返回的反向(reverse)移動的形式而進行。於時間t6至時間t7之間僅Z向馬達20被驅動,從而毛細管28於反向移動後的位置處上升。繼而,於時間t7至時間t8之間維持該狀態。於該狀態下,金屬線30的線弧成為最高點。於時間t8至時間t9之間,在線夾32閉合的狀態下略微地對XY平台16進行移動驅動。該移動驅動是以於XY平面內,使毛細管28自反向移動後的位置向第二接合點102的方向移動的方式而進行。藉此,線弧向第二接合點102側被拉伸,而將線弧的最高點調整為所期望的高度。 In FIG. 3, time t 4 to time t 10 are periods during which the line arc forming processing step. At this time, the pressing force is restored. During this period, the control unit 80 executes the line arc forming program 86. 3, at time t between time t 5. 4 only to the Z-direction motor 20 is driven, whereby the capillary tube 28 is slightly increased. Between time t 5 and time t 6 , only the XY stage 16 is mobile driven. The movement drive is performed in the form of a reverse movement in which the capillary 28 is temporarily returned from the first joint 100 to the opposite side of the second joint 102 in the XY plane. Only the Z-direction motor 20 is driven between time t 6 and time t 7 so that the capillary 28 rises at the position after the reverse movement. Then, at time t between time t 8. 7 to maintain the state. In this state, the line arc of the wire 30 becomes the highest point. Between time t 8 and time t 9 , the XY stage 16 is slightly driven in a state where the wire clip 32 is closed. This movement drive is performed in such a manner that the position of the capillary 28 from the reverse movement in the XY plane is moved in the direction of the second joint 102. Thereby, the line arc is stretched toward the second joint point 102 side, and the highest point of the line arc is adjusted to the desired height.

於時間t9打開線夾32,金屬線30成為可自毛細管28的前端延出的狀態。繼而,於時間t9至時間t10之間,對XY平台16進行移動驅動,且驅動Z向馬達20。藉此,一面朝向第二接合點102使金屬線30延出一面使毛細管28下降,從而線弧朝下方 下降。 At time t 9 open clip 32, wire 30 may be in a state of extending from the distal end of the capillary 28 out. Then, at time t 9 to 10 between time t, and for driving the XY stage 16 is moved, and the Z drive motor 20. Thereby, the capillary wire 28 is lowered while the metal wire 30 is extended toward the second joint 102, and the wire arc is lowered downward.

於時間t10,毛細管28到達第二接合點102的正上方。時間t10至時間t13為第二接合點102的第二打線處理步驟的期間。於該期間內,控制部80執行第二接合程式88。關於毛細管28的下降,自時間t9至毛細管28移動至第二接合點102的正上方的時間t10為高速下降,於時間t10至毛細管28接觸於半導體晶片6的焊墊的時間t12之間是設為低速。該低速下降被稱為第二搜尋(second search)。 At time t 10 , the capillary 28 reaches directly above the second junction 102. The time t 10 to the time t 13 is the period of the second wire bonding processing step of the second bonding point 102. During this period, the control unit 80 executes the second engagement program 88. About 28 drops of the capillary, from time t 9 to the capillary 28 is moved to a second time just above the engaging point 102 t 10 high speed decrease, at time t 10 to the capillary contact with the semiconductor wafer 28 time pad 6 t 12 The setting is set to low speed. This low speed drop is referred to as a second search.

於時間t12至時間t13之間,XY平台16與Z向馬達20均為停止狀態,於該期間內,超音波振動器26運作而對毛細管28賦予超音波能量。壓抵力於時間t10至超音波振動器26的運作開始前後的時間之間階段性地變化。如此一來,於時間t12至時間t13之間,於第二接合點102,在毛細管28的前端與半導體晶片6的焊墊之間夾著自毛細管28的前端突出的金屬線30,且藉由超音波能量及壓抵力而進行金屬線30與導線之間的接合。於該接合處理期間,接合平台14較佳為被加熱維持在適當的處理溫度。 At time t to time t 12 is between 13, XY stage 16 and the Z-direction motor 20 are stopped, in this period, the operation of the ultrasonic vibrator 26 to impart ultrasonic energy to the capillary tube 28. The pressing force changes stepwise between the time t 10 and the time before and after the start of the operation of the ultrasonic vibrator 26. As a result, between the time t 12 and the time t 13 , at the second joint 102, a metal wire 30 protruding from the front end of the capillary 28 is sandwiched between the tip end of the capillary 28 and the pad of the semiconductor wafer 6, and The bonding between the metal wire 30 and the wire is performed by ultrasonic energy and pressure. During the bonding process, the bonding platform 14 is preferably heated to maintain the appropriate processing temperature.

於圖3中,時間t13至時間t15為金屬線切斷處理步驟的期間。金屬線切斷處理步驟可與第二打線處理相區別,而成為由控制部80執行專用的金屬線切斷處理程式的步驟。或者,亦可將該期間包含於第二打線處理步驟中,於第二接合程式88中包含金屬線切斷處理的程式。 In Fig. 3, time t 13 to time t 15 are periods during which the wire cutting process is performed. The wire cutting process step can be distinguished from the second wire bonding process by a step of executing a dedicated wire cutting process program by the control unit 80. Alternatively, the period may be included in the second wire bonding process, and the second bonding program 88 may include a wire cutting process.

於金屬線切斷處理步驟中,壓抵力復原。如圖3所示,於時間t13至時間t14之間僅Z向馬達20被驅動,藉此毛細管28略微上升。於時間t14至時間t15之間,閉合線夾32,對XY平台 16進行移動驅動,且驅動Z向馬達20。該移動驅動是以毛細管28一面上升一面於XY平面內移動的方式而進行。藉此,金屬線30於第二接合點102被切斷。 In the wire cutting process step, the pressing force is restored. 3, at time t to time t 13 is the Z-direction only between the motor 20 is driven 14, whereby the capillary tube 28 is slightly increased. Between time t 14 and time t 15 , the clamp 32 is closed, the XY stage 16 is moved and driven, and the Z-direction motor 20 is driven. This movement drive is performed such that the capillary 28 moves in the XY plane while rising. Thereby, the wire 30 is cut at the second joint 102.

如此,自第一接合點100的第一打線處理經過線弧形成處理後,進行第二接合點102的第二打線處理及金屬線切斷。 In this manner, after the first wire bonding process from the first bonding point 100 is subjected to the wire arc forming process, the second wire bonding process and the wire wire cutting of the second bonding pad 102 are performed.

使用圖4至圖9對上述構成的作用、對尤其是控制部80的未接合連續監視與金屬線30的中途切斷判定等的功能進而詳細地進行說明。圖4是自打線方法的順序中選取自第一打線處理至第二打線處理為止的順序而表示的流程圖,各順序與儲存於電腦60的記憶體82中的各程式的處理順序對應。若將打線裝置10接通電源等,會進行包含電腦60的打線裝置10的各構成構件的初始化。 The functions of the above-described configuration, and in particular, the functions of the continuous monitoring of the unconnected control unit 80 and the midway cutting determination of the wire 30 will be described in detail with reference to FIGS. 4 to 9 . 4 is a flowchart showing the order from the first wire bonding process to the second wire bonding process in the order of the wire bonding method, and the order corresponds to the processing order of each program stored in the memory 82 of the computer 60. When the wire bonding device 10 is turned on or the like, initialization of each component of the wire bonding device 10 including the computer 60 is performed.

其次,暫時拉出接合平台14,將作為接合對象物的搭載有半導體晶片6的電路基板8定位設置於接合平台14上,藉由窗式夾具50壓住而固定。使接合平台14再次返回至初始狀態的位置。此外,接合平台14被加熱至接合條件中所決定的規定溫度。該接合對象物設定步驟是使用電路基板8的自動搬送裝置而自動地進行。 Then, the bonding stage 14 is temporarily pulled out, and the circuit board 8 on which the semiconductor wafer 6 is mounted as the bonding target is positioned and placed on the bonding stage 14, and is fixed by being pressed by the window clamp 50. The joining platform 14 is returned to the position of the initial state again. Further, the joining platform 14 is heated to a predetermined temperature determined in the joining condition. This bonding target setting step is automatically performed using the automatic transfer device of the circuit board 8.

其次,藉由控制部80執行第一接合程式84,於第一接合點100進行第一打線處理(S10)。第一接合點100是設定於電路基板8的一根導線上。第一接合點100的設定是使用圖1中未繪示的定位相機(camera)等而進行。於圖3中已對第一打線處理中的各構件的動作進行了敍述,因此省略詳細的說明。 Next, the first joining program 84 is executed by the control unit 80, and the first joining process is performed at the first joining point 100 (S10). The first bonding point 100 is set on one of the wires of the circuit board 8. The setting of the first joint 100 is performed using a positioning camera or the like not shown in FIG. The operation of each member in the first wire bonding process has been described in FIG. 3, and thus detailed description thereof will be omitted.

於第一接合點100,在毛細管28的前端部與電路基板8 的導線之間夾入金屬線30並進行壓抵,藉由超音波振動器26的超音波振動能量、利用Z向馬達20的驅動控制產生的毛細管28的按壓力、以及視需要的來自接合平台14的加熱溫度,而將金屬線30與導線之間接合。以此方式,進行於第一接合點100的第一打線處理。 At the first joint 100, at the front end portion of the capillary 28 and the circuit substrate 8 The wire 30 is sandwiched between the wires and pressed, by the ultrasonic vibration energy of the ultrasonic vibrator 26, the pressing force of the capillary 28 generated by the driving control of the Z-direction motor 20, and optionally from the bonding platform. The heating temperature of 14 is to bond the metal wire 30 to the wire. In this way, the first wire bonding process at the first joint 100 is performed.

若第一打線處理結束,則進行線弧形成處理(S12)。該處理順序是藉由控制部80執行線弧形成程式86而進行。即,於第一打線處理結束後,在打開線夾32的狀態下使毛細管28朝上方上升,繼而移動至第二接合點102的正上方。第二接合點102是設定於半導體晶片6的一個焊墊上。於毛細管28移動的期間,金屬線30自線軸33被陸續送出,而自毛細管28的前端延出必要的線長。於圖3中已對線弧形成處理中的的各構件的動作進行了敍述,因此省略詳細的說明。 When the first wire bonding process is completed, the line arc forming process is performed (S12). This processing sequence is performed by the control unit 80 executing the line arc forming program 86. That is, after the completion of the first wire bonding process, the capillary 28 is raised upward while the wire clamp 32 is opened, and then moved to the immediately above the second bonding point 102. The second junction 102 is disposed on one of the pads of the semiconductor wafer 6. While the capillary 28 is moving, the wire 30 is successively fed from the bobbin 33, and the necessary line length is extended from the front end of the capillary 28. The operation of each member in the line arc forming process has been described in FIG. 3, and thus detailed description thereof will be omitted.

於線弧形成處理期間,進行未接合連續監視(S14)。該處理順序是藉由控制部80執行未接合連續監視程式90而進行。未接合連續監視是以如下方式進行:按控制部80的指令,經由未接合判定電路I/F70使未接合判定電路36連續地運作,且控制部80連續地接收所得之結果。 During the line arc forming process, continuous monitoring without engagement is performed (S14). This processing sequence is performed by the control unit 80 executing the unjoined continuous monitoring program 90. The unjoined continuous monitoring is performed in such a manner that the unjoining determination circuit 36 is continuously operated via the unjoining determination circuit I/F 70 in accordance with an instruction from the control unit 80, and the control unit 80 continuously receives the obtained result.

未接合判定電路36的連續運作是使圖2中所說明的作為施加電源106的交流電壓電源於預先規定的連續監視期間內連續地運作。藉此,對保持於毛細管28的金屬線30與接合平台14之間連續地施加交流電壓訊號。圖2中所說明的測定部108取得保持於毛細管28的金屬線30與接合平台14之間的電容值,並經由未接合判定電路I/F70將該值逐次地傳送至控制部80。 The continuous operation of the unjoined determination circuit 36 is such that the AC voltage source as the application power source 106 illustrated in Fig. 2 operates continuously for a predetermined continuous monitoring period. Thereby, an alternating voltage signal is continuously applied between the metal wire 30 held by the capillary 28 and the bonding platform 14. The measuring unit 108 described in FIG. 2 acquires the capacitance value between the wire 30 held by the capillary 28 and the bonding stage 14, and transmits the value to the control unit 80 sequentially via the unjoining determination circuit I/F 70.

藉由未接合連續監視,而判定是否金屬線中途切斷(S16)。該處理順序是藉由控制部80執行切斷判定處理程式92而進行。 It is determined whether or not the metal wire is cut in the middle by continuous monitoring without joint (S16). This processing sequence is performed by the control unit 80 executing the cut determination processing program 92.

於圖5中,將未接合連續監視時的各訊號的時間變化與毛細管28的動作狀態建立關聯而表示。圖5的橫軸為時間。關於縱軸,自紙面的上段側朝向下段側依序為毛細管28的動作狀態、未接合判定電路36的測定部108的輸出即未接合監視輸出、將未接合監視輸出進行微分所得的微分輸出、習知技術中的未接合監視的時序。 In FIG. 5, the time change of each signal when the continuous monitoring is not engaged is shown in association with the operating state of the capillary 28. The horizontal axis of Fig. 5 is time. The vertical axis is the operation state of the capillary 28 from the upper stage side toward the lower stage side of the paper surface, the output of the measurement unit 108 of the unjoined determination circuit 36, that is, the unjoined monitoring output, and the differential output obtained by differentiating the unjoined monitoring output. The timing of unjoined monitoring in the prior art.

橫軸的時間t4、時間t7、時間t9、時間t12為與圖3中所說明的內容相同的內容。即,時間t4為於第一接合點100的接合處理結束後開始線弧形成處理的時序,時間t7至時間t9之間是成為最高位置的線弧形成的期間,t12為毛細管28下降而金屬線30接觸於第二接合點102的時序。如圖5的最下段所示,時間T1、時間T2、時間T3為習知技術中的未接合監視的時序。此處,分別設定為即將到時間t4之前、剛過時間t7之後、t12之後的時序。該情況為例示,具有於除此以外的適當的取樣時序(sampling timing)進行未接合監視的情況。 The time t 4 , time t 7 , time t 9 , and time t 12 on the horizontal axis are the same as those described in FIG. That is, the time t 4 is the timing at which the line arc forming process is started after the bonding process of the first bonding point 100 is completed, and the period from the time t 7 to the time t 9 is the period in which the line arc which is the highest position is formed, and t 12 is the capillary 28 The timing at which the metal line 30 contacts the second junction 102 is lowered. As shown in the lowermost section of Fig. 5, the time T 1 , the time T 2 , and the time T 3 are the timings of the unjoined monitoring in the prior art. Here, the timing is just before the time t 4 , just after the time t 7 , and after t 12 . This case is an example, and there is a case where the unsynchronized monitoring is performed by an appropriate sampling timing other than this.

如自圖5的上方起第二段的未接合監視輸出所示,此處並非於習知技術的取樣時序,而是於預先設定的連續監視期間內使未接合判定電路36持續運作。連續監視期間是設定為適於監視在第一接合處理後自第一接合點至第二接合點之間金屬線30是否被切斷的期間。此處,將自第一接合點至第二接合點之間的整個期間設定為連續監視期間。亦可取而代之,將例如習知技術中所 使用的T1至T3之間設為連續監視期間。或者,亦可直接保留習知技術的未接合監視取樣時序的T1與T3,且將毛細管28成為最高位置的時間t7至毛細管28成為最低位置的時間t12之間設為連續監視期間。 As shown by the unjoined monitor output of the second stage from the top of FIG. 5, this is not the sampling timing of the prior art, but the unjoined determination circuit 36 is continuously operated during the predetermined continuous monitoring period. The continuous monitoring period is set to be suitable for monitoring whether or not the wire 30 is cut from the first joint to the second joint after the first joining process. Here, the entire period from the first joint point to the second joint point is set as the continuous monitoring period. Alternatively, for example, a period between T 1 and T 3 used in the prior art is set as a continuous monitoring period. Alternatively, T 1 and T 3 of the uncombined monitoring sampling timing of the prior art may be directly retained, and the time t 7 when the capillary 28 is at the highest position and the time t 12 when the capillary 28 is the lowest position are set as the continuous monitoring period. .

未接合監視輸出是以未接合判定電路36的測定部108的輸出表示電容值的時間變化。於圖5中,例如於毛細管28上升中的時間C0至時間C1維持大致固定值的電容值,於時間C1電容值急遽地降低。若金屬線30被切斷,則測定部108檢測到的電容值自「裝置電容值與器件電容值的合計值」變為「裝置電容值」,因此可判定金屬線30於時間C1被切斷。於時間C1至時間C2之間維持降低後的電容值,但於時間C2電容值急遽地恢復至原來的高的值。該情況被認為是自「裝置電容值」恢復至「裝置電容值與器件電容值的合計值」,而可判定因金屬線30的中途切斷而自毛細管28的前端延伸的金屬線30接觸於電路基板8或半導體晶片6。 The unjoined monitor output is a time change indicating the capacitance value by the output of the measuring unit 108 of the unjoined determination circuit 36. In FIG. 5, for example to increase the capillary 28 C 0 time to time a capacitance value C 1 is maintained substantially constant value, to decrease abruptly at the time a capacitance value C 1. When the wire 30 is cut off, the capacitance value detected from the measurement section 108 "total value of the capacitance value of the capacitance value of the device apparatus" to "means the capacitance value" can be determined and therefore the metal wire 301 is cut at time C Broken. Time to reduce the capacitance value C is maintained after the time C between 2 to 1, but at the time a capacitance value C 2 abruptly restored to the original high value. In this case, it is considered that the "device capacitance value" is restored to "the total value of the device capacitance value and the device capacitance value", and it can be determined that the metal wire 30 extending from the tip end of the capillary 28 due to the middle cut of the metal wire 30 is in contact with The circuit substrate 8 or the semiconductor wafer 6.

如此,取得保持於毛細管28的金屬線30與接合平台14之間的電容值,於第一接合處理後電容值降低時,可判定金屬線30於線弧的中途被切斷。另外,於之後到達第二接合點之前電容值恢復時,可判定被切斷的金屬線30垂下而接觸於作為接合對象物的電路基板8或半導體晶片6。 In this manner, the capacitance value between the metal wire 30 held by the capillary 28 and the bonding stage 14 is obtained, and when the capacitance value is lowered after the first bonding process, it can be determined that the metal wire 30 is cut in the middle of the line arc. In addition, when the capacitance value is restored before reaching the second bonding point, it can be determined that the cut metal wire 30 hangs down and comes into contact with the circuit substrate 8 or the semiconductor wafer 6 as the bonding target.

於習知技術的未接合監視的取樣時序,在時間T1、時間T2、時間T3中的任一時間,電容值均為相同的值而不變化,因此,無法檢測出金屬線30的中途切斷。 In the sampling timing of the unjoined monitoring of the prior art, at any one of the time T1, the time T2, and the time T3, the capacitance values are the same value without change, and therefore, the middle of the wire 30 cannot be detected. .

於上述中是以電容值的變化而判定金屬線30有無中途 切斷。電容值有無變化的檢測可使用閾值電容值,利用閾值電容值的比較而進行。取而代之,可基於將表示電容值的電氣訊號對時間進行微分所得的微分值,而判定金屬線30有無中途切斷。圖5的微分輸出是將未接合監視輸出對時間進行微分所得的輸出,若電容值急遽地降低,則輸出負方向的脈波,若電容值急遽地上升恢復,則輸出正方向的脈波。可基於該脈波輸出的有無而判定金屬線30有無中途切斷。 In the above, it is determined whether or not the metal wire 30 is halfway due to a change in the capacitance value. Cut off. The detection of the change in the capacitance value can be performed using a comparison of the threshold capacitance values using a threshold capacitance value. Instead, it is determined whether or not the metal wire 30 is cut off halfway based on the differential value obtained by differentiating the electric signal representing the capacitance value with respect to time. The differential output of FIG. 5 is an output obtained by differentiating the unjoined monitor output from time. When the capacitance value is drastically lowered, the pulse wave in the negative direction is output, and if the capacitance value rises and falls sharply, the pulse wave in the positive direction is output. Whether or not the wire 30 is cut off halfway can be determined based on the presence or absence of the pulse wave output.

圖6至圖9是表示於時間t4、時間C0、時間C1、時間C2的各時間的金屬線30的狀態的圖。 6 to 9 are diagrams showing states of the metal wires 30 at times t 4 , time C 0 , time C 1 , and time C 2 .

於圖6所示的時間t4,於第一接合點100,在毛細管28的前端與電路基板8的導線之間夾著自毛細管28的前端突出的金屬線30。因此,於測定部108檢測到的電容值成為「裝置電容值與器件電容值的合計值」。 At the time shown in FIG. 6 t 4, the first joint 100, between the wire and the tip of the capillary 28 of the circuit board 8 interposed therebetween protrudes from the distal end 30 of the capillary 28 is a metal wire. Therefore, the capacitance value detected by the measurement unit 108 becomes "the total value of the device capacitance value and the device capacitance value".

於圖7所示的時間C0,毛細管28為如下狀態:自第一接合點100於XY平面內移動X1,且Z方向的高度為以電路基板8的上表面為基準而上升至Z1。關於金屬線30是在第一接合點100處接合於電路基板8的狀態下,使金屬線30自毛細管28延出。此時,於測定部108檢測到的電容值亦為「裝置電容值與器件電容值的合計值」。 At time C 0 shown in FIG. 7, the capillary 28 is in a state in which X1 is moved from the first joint 100 in the XY plane, and the height in the Z direction is raised to Z1 based on the upper surface of the circuit board 8. The metal wire 30 is extended from the capillary 28 in a state where the metal wire 30 is bonded to the circuit board 8 at the first joint 100. At this time, the capacitance value detected by the measurement unit 108 is also "the total value of the device capacitance value and the device capacitance value".

圖8中所示的時間C1為如下時間:毛細管28的Z方向的高度成為最高值Z2,線夾32閉合,XY平台16自第一接合點100於XY平面內已移動距離X2(參照圖3)。此處,示出金屬線30於第1接合點100與毛細管28的前端之間成為切斷狀態104。金屬線30自毛細管28向第一接合點100的方向延伸且被切斷的 部分成為前端部105。此外,產生切斷的時間C1的上述狀態為例示,只要為自第1接合點100朝向第二接合點102的中途,便可設為於除此以外的狀態下產生切斷。 The time C 1 shown in FIG. 8 is the time when the height of the capillary 28 in the Z direction becomes the highest value Z2, the clip 32 is closed, and the XY stage 16 has moved by the distance X2 from the first joint 100 in the XY plane (refer to the figure). 3). Here, it is shown that the metal wire 30 is in the cut-off state 104 between the first joint 100 and the tip end of the capillary 28. The portion of the wire 30 that extends from the capillary 28 in the direction of the first joint 100 and is cut is the tip end portion 105. In addition, the above-described state in which the cutting time C 1 is generated is exemplified, and the cutting may be performed in other states as long as it is in the middle of the second joining point 102 from the first joining point 100.

此時,於測定部108檢測到的電容值成為「裝置電容值」,電容值自「裝置電容值與器件電容值的合計值」急遽地降低。根據未接合連續監視,藉由檢測到電容值的急遽降低,而可判定金屬線30於線弧的中途被切斷。 At this time, the capacitance value detected by the measurement unit 108 becomes the "device capacitance value", and the capacitance value is drastically lowered from the "total value of the device capacitance value and the device capacitance value". According to the unjoined continuous monitoring, it is determined that the wire 30 is cut off in the middle of the line arc by detecting a sudden decrease in the capacitance value.

圖9所示的時間C2為如下時間:毛細管28沿Z方向下降至Z3的高度,且一面於XY平面移動,一面自第一接合點100移動距離X3,而毛細管28的前端到達第二接合點102的正上方。Z3為小於圖8的Z2的值,X3為大於圖8的X2的值。此時,因毛細管28的降低,而自毛細管28延伸的金屬線30的前端部105接觸於電路基板8。此時,於測定部108檢測到的電容值急遽地上升並恢復至「裝置電容值與器件電容值的合計值」。根據未接合連續監視,於檢測到電容值的急遽的上升恢復時,結合之前的時間C1的電容值的急遽降低檢測,而可判定該情況並非表示金屬線30與第1接合點100之間的連接正常,而是表示金屬線30於線弧中途切斷,其前端部105垂下而接觸於接合對象物。 The time C 2 shown in Fig. 9 is the time when the capillary 28 is lowered in the Z direction to the height of Z3, and one side is moved in the XY plane, and the distance X3 is moved from the first joint 100, and the front end of the capillary 28 reaches the second joint. Just above point 102. Z 3 is a value smaller than Z 2 of Fig. 8, and X 3 is a value larger than X 2 of Fig. 8 . At this time, the tip end portion 105 of the wire 30 extending from the capillary 28 is in contact with the circuit board 8 due to the decrease of the capillary 28. At this time, the capacitance value detected by the measurement unit 108 rises sharply and returns to the "total value of the device capacitance value and the device capacitance value". According to the unjoined continuous monitoring, when the sudden rise recovery of the capacitance value is detected, the sudden decrease detection of the capacitance value of the previous time C 1 is combined, and it can be determined that the case does not indicate between the metal wire 30 and the first bonding point 100. The connection is normal, and the metal wire 30 is cut in the middle of the line arc, and the front end portion 105 is suspended to contact the object to be joined.

再次返回至圖4,若S14中的是否金屬線中途切斷的判定結果是判定為未產生金屬線中途切斷,則繼而於第二接合點102進行第二打線處理(S18)。該處理順序是藉由控制部80執行第二接合程式88而進行。第二接合點102是設定於半導體晶片6的一個焊墊上。第二接合點102的設定是使用圖1中未繪示的定位相機等而進行。於圖3中已對第二打線處理中的各構件的動作進行 了敍述,因此省略詳細的說明。 Returning to FIG. 4 again, if it is determined in S14 whether or not the metal wire is cut in the middle, it is determined that the wire is not cut in the middle, and then the second wire bonding process is performed at the second joint 102 (S18). This processing sequence is performed by the control unit 80 executing the second joining program 88. The second junction 102 is disposed on one of the pads of the semiconductor wafer 6. The setting of the second joint 102 is performed using a positioning camera or the like not shown in FIG. The operation of each member in the second wire bonding process has been performed in FIG. The description is omitted, so detailed description is omitted.

若S16中的是否金屬線中途切斷的判定結果是判定為產生金屬線中途切斷,則輸出異常訊號(S20),停止打線裝置10的動作(S22)。該處理順序是藉由控制部80執行異常輸出處理程式94而進行。 If it is determined in S16 that the metal wire is cut in the middle, it is determined that the metal wire is cut off in the middle, and an abnormal signal is output (S20), and the operation of the wire bonding device 10 is stopped (S22). This processing sequence is performed by the control unit 80 executing the abnormality output processing program 94.

如此,藉由使未接合判定電路36連續運作而連續地進行未接合監視,即便於毛細管28的楔形接合時使用伸展性比金線小的鋁線,亦可準確地判斷第一接合點100至第二接合點102之間的金屬線切斷的有無。 By continuously performing the unjoined monitoring by continuously operating the unjoined determination circuit 36, even when the aluminum wire having a smaller stretch than the gold wire is used for the wedge bonding of the capillary 28, the first joint 100 can be accurately judged to The presence or absence of the wire break between the second joints 102.

於上述中,雖然規定的連續監視期間是設為於第1接合處理後使金屬線自第一接合點延出至第二接合點為止的期間,但亦可遍及自第一接合處理之前至上述第二接合之後的整個期間而設定連續監視期間。 In the above, the predetermined continuous monitoring period is a period in which the metal wire is extended from the first bonding point to the second bonding point after the first bonding process, but may be performed from the first bonding process to the above. The continuous monitoring period is set for the entire period after the second joining.

於該連續監視期間內,未接合監視部對保持於毛細管28的金屬線30與接合平台14之間連續地施加規定的電氣訊號。繼而,相對於該電氣訊號的連續響應,使用適當的判斷閾值而監視並判斷金屬線30的連接狀態有無變化。 During the continuous monitoring period, the unjoined monitoring unit continuously applies a predetermined electrical signal to the wire 30 held between the capillary 28 and the bonding platform 14. Then, with respect to the continuous response of the electric signal, an appropriate judgment threshold is used to monitor and judge whether or not the connection state of the wire 30 is changed.

若將第一接合點的金屬線的未接合設為F1,將線弧形成期間的金屬線的中途切斷設為F2,將第二接合點的金屬線的未接合設為F3,將第二接合處理後且金屬線切斷處理前的金屬線的中途切斷設為F4,則相對於F1至F4,分別使用適當的判斷閾值。如此,可將F1至F4相區別而進行監視。 When the unbonded metal wire of the first joint is F1, the middle of the wire during the arc formation is cut into F2, and the unbonded wire of the second joint is F3, and the second is After the joining process and the middle cut of the wire before the wire cutting process is F4, an appropriate determination threshold value is used for each of F1 to F4. In this way, F1 to F4 can be distinguished and monitored.

以下,使用圖10至圖12,對於遍及自第1接合處理之前至第2接合之後的整個期間進行連續監視,且將關於F1至F4 相區別的內容進行詳細說明。 Hereinafter, continuous monitoring is performed for the entire period from the first bonding process to the second bonding process, and will be about F1 to F4, using FIGS. 10 to 12 . The contents of the difference are described in detail.

圖10是與圖6至圖9對應的圖,且將示於圖6至圖9的狀態進一步擴展,表示自第一接合處理之前至上述第二接合之後的整個期間的金屬線30的接合情況的圖。此處,示出毫無問題地進行過如下處理的金屬線31:對電路基板8的第1接合點進行的第一接合處理、第一接合處理後的線弧形成處理、於線弧形成處理之後對半導體晶片6的第二接合點進行的第二接合處理、於第二接合處理後切斷金屬線30的切斷處理。 Fig. 10 is a view corresponding to Figs. 6 to 9, and further expanded in a state shown in Figs. 6 to 9, showing the joining of the wires 30 from the first bonding process to the second bonding after the second bonding. Figure. Here, the metal wire 31 which has been subjected to the following treatment without any problem is shown: a first bonding process performed on the first bonding point of the circuit board 8, a line arc forming process after the first bonding process, and a line arc forming process Thereafter, the second bonding process is performed on the second bonding point of the semiconductor wafer 6, and the cutting process of the metal wire 30 is cut after the second bonding process.

於圖10中,分別示出第一接合點的金屬線的未接合即F1、線弧形成期間的金屬線的中途切斷即F2、第二接合點的金屬線的未接合即F3、第二接合處理後且金屬線切斷處理前的金屬線的中途切斷即F4的產生部位。 In FIG. 10, the metal wire of the first joint is not joined, that is, F1, and the middle of the wire during the formation of the arc is F2, and the wire of the second joint is not joined, that is, F3, and the second. The portion where F4 is generated is cut in the middle of the metal wire before the bonding process and before the wire cutting process.

圖10所示的未接合判定電路36為與圖2中所說明的內容相同的內容,包括輸出規定的電氣訊號的施加電源106、及測定對於規定的電氣訊號的響應的測定部108。此處,作為規定的電氣訊號,使用交流電壓訊號或直流電壓訊號。 The unjoining determination circuit 36 shown in FIG. 10 is the same as that described in FIG. 2, and includes an application power source 106 that outputs a predetermined electric signal, and a measurement unit 108 that measures a response to a predetermined electric signal. Here, as a predetermined electrical signal, an AC voltage signal or a DC voltage signal is used.

該電氣訊號的區分使用可根據是否視為半導體晶片6與電路基板8均僅以電阻成分而與接合平台14連接來決定。於視為半導體晶片6與電路基板8均僅以電阻成分而與接合平台14連接的情況下,可使用直流電壓訊號作為規定的電氣訊號。於不視為半導體晶片6與電路基板8均僅以電阻成分而與接合平台14連接,還包含電容成分的情況下,使用交流電壓訊號作為規定的電氣訊號。 The use of the electric signal can be determined depending on whether or not the semiconductor wafer 6 and the circuit board 8 are connected to the bonding platform 14 only with a resistance component. When the semiconductor wafer 6 and the circuit board 8 are both connected to the bonding platform 14 only with a resistance component, a DC voltage signal can be used as a predetermined electrical signal. The semiconductor wafer 6 and the circuit board 8 are not considered to be connected to the bonding platform 14 only by a resistance component, and when a capacitor component is included, an AC voltage signal is used as a predetermined electrical signal.

於使用交流電壓訊號作為規定的電氣訊號時,測定部 108測定介於隔線夾32的金屬線30與接合平台14之間的電容值的變化。電容值可使用適當的轉換電路而轉換為電壓值,藉由測定轉換後的電壓值的變化,而測定電容值的變化。於使用直流電壓訊號作為規定的電氣訊號時,測定部108測定介於隔線夾32的金屬線30與接合平台14之間的電氣短路有無的變化。 When using an AC voltage signal as a prescribed electrical signal, the measuring unit 108 measures the change in capacitance between the wire 30 of the spacer 32 and the landing platform 14. The capacitance value can be converted into a voltage value using an appropriate conversion circuit, and the change in the capacitance value is measured by measuring the change in the converted voltage value. When the DC voltage signal is used as a predetermined electrical signal, the measuring unit 108 measures the change in the presence or absence of an electrical short between the wire 30 of the spacer 32 and the bonding stage 14.

電氣短路的有無是以如下方式測定電壓值而進行。即,將接合平台的電位設為接地電壓值V=0(V),將具有比接地電壓值高規定電壓值V0的電壓的直流電壓訊號設為規定的電氣訊號。而且,於所測定的電壓值為V=0(V)時,設為於金屬線30與接合平台14之間存在電氣短路,於所測定的電壓值為規定電壓值V0時,設為不存在電氣短路。 The presence or absence of an electrical short is performed by measuring the voltage value as follows. In other words, the potential of the bonding platform is set to the ground voltage value V=0 (V), and the DC voltage signal having a voltage higher than the ground voltage value by the predetermined voltage value V 0 is set as a predetermined electrical signal. Further, when the measured voltage value is V = 0 (V), there is an electrical short between the metal wire 30 and the bonding stage 14, and when the measured voltage value is a predetermined voltage value V 0 , it is set to There is an electrical short circuit.

圖11(a)~圖11(f)是表示於使用交流電壓訊號作為規定的電氣訊號,而測定作為該電氣訊號的連續響應的金屬線30與接合平台14之間的電容值的情況下可將F1至F4相區別的圖。圖11(a)~圖11(f)由圖11(a)至圖11(f)該六個時序圖構成。於該些所有的時序圖中,橫軸為時間。圖11(a)的縱軸為毛細管的高度位置,圖11(b)至圖11(f)的縱軸為金屬線30與接合平台14之間的電容值。 11(a) to 11(f) show the case where the AC voltage signal is used as a predetermined electrical signal, and the capacitance value between the metal wire 30 and the bonding platform 14 as a continuous response of the electrical signal is measured. A diagram that distinguishes F1 to F4. 11(a) to 11(f) are composed of the six timing charts of Figs. 11(a) to 11(f). In all of these timing diagrams, the horizontal axis is time. The vertical axis of Fig. 11(a) is the height position of the capillary, and the vertical axis of Figs. 11(b) to 11(f) is the capacitance between the metal wire 30 and the bonding stage 14.

圖11(a)與圖3的最上段的圖對應。橫軸的時間t3、時間t4、時間t12、時間t13、時間t14與圖3中所說明的內容相同。即,時間t3至t4的期間為第一接合處理期間,t12至t13的期間為第二接合處理期間,t14是藉由第二接合處理之後的線夾32的操作而切斷金屬線30的時序。 Fig. 11(a) corresponds to the uppermost diagram of Fig. 3. The time t 3 , the time t 4 , the time t 12 , the time t 13 , and the time t 14 on the horizontal axis are the same as those described in FIG. That is, the period from time t 3 to t 4 is the first bonding processing period, the period from t 12 to t 13 is the second bonding processing period, and t 14 is cut by the operation of the clip 32 after the second bonding processing. Timing of metal lines 30.

圖11(b)是表示對於在自第1接合處理之前至上述第 二接合之後的整個期間毫無問題地進行過所有處理的良品所測定出的電容值的時間變化的時序圖。 Fig. 11 (b) shows that before the first bonding process to the above A time chart of the temporal change of the capacitance value measured by the good products of all the processes without any problem during the entire period after the second bonding.

於圖11(b)中,直至時間t3之前金屬線30未接觸於電路基板8,因此電容值成為介於打線裝置10的金屬線30與接合平台14之間的裝置電容值。將該裝置電容值於圖11中表示為CMIn in FIG. 11 (b), before the time until the metal wire 3 t 30 is not in contact with the circuit board 8, so the capacitance value of the capacitance value becomes 30 means interposed between the metal wire 14 wire apparatus 10 and the bonding stage. The device capacitance value is represented as C M in FIG.

若金屬線30於時間t3接觸於電路基板8,則加上電路基板8所具有的電容值而測定出。將電路基板8所具有的電容值於圖11中表示為CL。因此,時間t3以後至時間t12的期間的電容值的測定值成為(CM+CL)。 When the wire 30 at time t 3 in contact with the circuit substrate 8, plus the capacitance value of the circuit board 8 and has measured. The capacitance value of the circuit board 8 is shown as C L in FIG. Thus, after the time t 3 to time t during a measurement value of the capacitance value becomes 12 (C M + C L).

若金屬線30於時間t12接觸於半導體晶片6,則進而加上半導體晶片6所具有的電容值而測定出。將半導體晶片6所具有的電容值於圖11中表示為CP。因此,時間t12以後至時間t14的期間的電容值的測定值成為(CM+CL+CP)。 When the wire 30 at time t 12 in contact with the semiconductor wafer 6, plus the capacitance value of the further semiconductor wafer 6 having being measured. The capacitance value of the semiconductor wafer 6 is shown as C P in FIG. Thus, after the time t to time t 12 is the capacitance value measured during 14 becomes a value (C M + C L + C P).

若金屬線30於時間t14藉由切斷處理而切斷,成為圖10所示的狀態,則金屬線30自電路基板8上的半導體晶片6離開而未進行接觸,因此電容值的測定值再次成為裝置電容值CMWhen the wire 30 at time t 14 is cut by the cutting process, the state shown in FIG. 10, the metal line on a semiconductor wafer 830 away from the circuit board 6 without contact, so the measurement value of the capacitance value Again becomes the device capacitance value C M .

圖11(c)是表示於第一接合點產生未接合F1時的電容值的時間變化的時序圖。未接合F1於第一接合處理期間即時間t3與時間t4之間產生。若產生未接合F1,則由於金屬線30未牢固地連接於電路基板8,故而電容值成為比良品時的時間t3時的電容值(CM+CL)更小的值。 Fig. 11 (c) is a timing chart showing temporal changes in the capacitance value when the first junction is not joined with F1. During the process F1 are not bonded to the first bonding i.e., the time t between time t. 3 and 4 produced. When the unbonded F1 is generated, since the metal wire 30 is not firmly connected to the circuit board 8, the capacitance value becomes a smaller value than the capacitance value (C M + C L ) at the time t 3 at the time of good product.

為區別良品與未接合F1,可將於t3以前穩定地測定出的電容值作為基準。例如,使用t3以前的電容值CM作為基準,使用將該CM與預先規定的測定裕度相加所得的值作為第一基準值 J1,使用該第一基準值J1作為區別良品與F1的判斷閾值。為簡化說明,於圖11(c)中設為J1=CM。於所測定的電容值超過J1時判斷為良品,於J1以下時判斷為F1。良品的一例為所測定的電容值為(CM+CL),F1的一例為所測定的電容值仍為CMIn order to distinguish between good and unjoined F1, the capacitance value measured stably before t 3 can be used as a reference. For example, using the capacitance value C M before t 3 as a reference, a value obtained by adding the C M to a predetermined measurement margin is used as the first reference value J1, and the first reference value J1 is used as the difference between the good and the F1. Judgment threshold. To simplify the explanation, it is set as J1 = C M in Fig. 11 (c). When the measured capacitance value exceeds J1, it is judged to be good, and when it is less than J1, it is judged as F1. An example of a good product is the measured capacitance value (C M + C L ), and an example of F1 is that the measured capacitance value is still C M .

圖11(d)是表示第一接合點的處理正常,於時間t3所測定的電容值成為(CM+CL),但於線弧形成處理中產生金屬線30的中途切斷F2時的電容值的時間變化的時序圖。中途切斷F2於時間t4與時間t12之間產生。若產生中途切斷F2,則由於金屬線30自電路基板8離開,故而所測定的電容值成為比良品時的時間t4時的電容值(CM+CL)更小的值。 Fig. 11 (d) shows that the processing of the first junction is normal, and the capacitance value measured at time t 3 is (C M + C L ), but when F2 is cut in the middle of the occurrence of the wire 30 in the line arc forming process. A timing diagram of the time variation of the capacitance value. The cut F2 is generated midway between time t 4 and time t 12 . When the F2 is cut in the middle, the metal wire 30 is separated from the circuit board 8, and the measured capacitance value is a value smaller than the capacitance value (C M + C L ) at the time t 4 at the time of good product.

為區別良品與中途切斷F2,可將於t4以後穩定地測定出的電容值設為基準。例如,使用t4時的電容值(CM+CL)作為基準,使用將該(CM+CL)與預先規定的測定裕度相加所得的值作為第二基準值J2,使用該第二基準值J2作為區別良品與F2的判斷閾值。為簡化說明,於圖11(d)中設為J2=(CM+CL)。於所測定的電容值仍為J2時判斷為良品,於小於J2時判斷為F2。良品的一例為所測定的電容值為(CM+CL),F2的一例為所測定的電容值為CMIn order to distinguish between good products and cut off F2 in the middle, the capacitance value measured stably after t 4 can be used as a reference. For example, using the capacitance value (C M + C L ) at t 4 as a reference, a value obtained by adding the (C M + C L ) to a predetermined measurement margin is used as the second reference value J2, and the The second reference value J2 is used as a judgment threshold for distinguishing between good products and F2. To simplify the explanation, it is assumed that J2 = (C M + C L ) in Fig. 11 (d). When the measured capacitance value is still J2, it is judged to be good, and when it is less than J2, it is judged as F2. An example of a good product is a measured capacitance value (C M + C L ), and an example of F2 is a measured capacitance value C M .

圖11(e)是表示線弧形成處理正常,但於第二接合點產生未接合F3時的電容值的時間變化的時序圖。未接合F3於時間t12與時間t13之間產生。若產生未接合F3,則由於金屬線30未牢固地連接於半導體晶片6,故而電容值成為比良品時的時間t12時的電容值(CM+CL+CP)更小的值。 Fig. 11(e) is a timing chart showing temporal changes in the capacitance value when the line arc forming process is normal, but when the second junction is not joined to F3. Unjoined F3 is produced between time t 12 and time t 13 . When the unbonded F3 is generated, since the metal wire 30 is not firmly connected to the semiconductor wafer 6, the capacitance value becomes a smaller value than the capacitance value (C M + C L + C P ) at the time t 12 at the time of good product.

為區別良品與未接合F3,可將於t4以後穩定地測定出 的電容值作為基準。例如,使用t4時的電容值(CM+CL)作為基準,使用將該(CM+CL)與預先規定的測定裕度相加所得的值作為第三基準值J3,使用該第三基準值J3作為區別良品與F3的判斷閾值。為簡化說明,於圖11(e)中設為J3=J2=(CM+CL)。若所測定的電容值超過J3,則判斷為良品,於仍為J3時判斷為F3。良品的一例為所測定的電容值為(CM+CL+CP),F3的一例為所測定的電容值為(CM+CL)。 In order to distinguish between good and unjoined F3, the capacitance value measured stably after t 4 can be used as a reference. For example, using the capacitance value (C M + C L ) at t 4 as a reference, a value obtained by adding the (C M + C L ) to a predetermined measurement margin is used as the third reference value J3, and the The third reference value J3 is used as a judgment threshold for distinguishing between good products and F3. To simplify the explanation, it is assumed that J3 = J2 = (C M + C L ) in Fig. 11(e). If the measured capacitance value exceeds J3, it is judged to be good, and when it is still J3, it is judged as F3. An example of a good product is a measured capacitance value (C M + C L + C P ), and an example of F3 is a measured capacitance value (C M + C L ).

圖11(f)是表示第二接合點的處理正常,於時間t12所測定的電容值成為(CM+CL+CP),但於之後的金屬線切斷處理之前產生金屬線30的中途切斷F4時的電容值的時間變化的時序圖。中途切斷F4於時間t13與時間t14之間產生。若產生中途切斷F4,則由於金屬線30自半導體晶片6離開,故而所測定的電容值成為比良品時的時間t13時的電容值(CM+CL+CP)更小的值。 Fig. 11 (f) shows that the processing of the second junction is normal, and the capacitance value measured at time t 12 is (C M + C L + C P ), but the metal line 30 is generated before the subsequent metal wire cutting process. A timing chart showing the time change of the capacitance value when F4 is cut off. Midway cut F4 is generated between time t 13 and time t 14 . When the F4 is cut in the middle, since the metal wire 30 is separated from the semiconductor wafer 6, the measured capacitance value becomes a smaller value than the capacitance value (C M + C L + C P ) at the time t 13 of the good product. .

為區別良品與中途切斷F4,可將於t13以前穩定地測定出的電容值作為基準。例如,使用t13時的電容值(CM+CL+CP)作為基準,使用將該(CM+CL+CP)與預先規定的測定裕度相減所得的值作為第四基準值J4,使用該第四基準值J4作為區別良品與F4的判斷閾值。為簡化說明,於圖11(f)中設為J4=(CM+CL+CP)。於所測定的電容值仍為J4時判斷為良品,於小於J4時判斷為F4。良品的一例為所測定的電容值為(CM+CL+CP),F4的一例為所測定的電容值為(CM+CL)。 In order to distinguish between good products and cut F4 in the middle, the capacitance value measured stably before t 13 can be used as a reference. For example, using the capacitance value (C M + C L + C P ) at t 13 as a reference, a value obtained by subtracting the (C M + C L + C P ) from a predetermined measurement margin is used as the fourth. The reference value J4 uses the fourth reference value J4 as a determination threshold for distinguishing good products from F4. To simplify the explanation, it is assumed that J4 = (C M + C L + C P ) in Fig. 11 (f). When the measured capacitance value is still J4, it is judged to be good, and when it is less than J4, it is judged as F4. An example of a good product is a measured capacitance value (C M + C L + C P ), and an example of F4 is a measured capacitance value (C M + C L ).

如此,規定的電氣訊號使用交流電壓訊號,且分別對應於F1至F4而將第一基準值J1至第四基準值J4作為判斷基準,藉此可區別第一接合點的未接合F1、線弧形成處理中的中途切斷 F2、第接合點的未接合F3、金屬線切斷處理之前的中途切斷F4。 In this way, the predetermined electrical signal uses the AC voltage signal, and the first reference value J1 to the fourth reference value J4 are used as the determination reference corresponding to F1 to F4, respectively, thereby distinguishing the unjoined F1 line arc of the first joint point. Midway cut in formation process F2, the unjoined F3 of the joint, and the middle of the wire cutting process before the cutting of F4.

圖12(a)~圖12(f)是表示於使用直流電壓訊號作為規定的電氣訊號,而測定作為該電氣訊號的連續響應的金屬線30與接合平台14之間的電壓值的情況下可將F1至F4相區別的圖。圖12(a)~圖12(f)是與圖11(a)~圖11(f)對應的圖,由圖12(a)至圖12(f)該六個時序圖構成。與圖11(a)~圖11(f)同樣地,於該些所有時序圖中,橫軸為時間。另外,圖12(a)的縱軸為毛細管的高度位置,圖12(b)至圖12(f)的縱軸為金屬線30與接合平台14之間的電壓值。 12(a) to 12(f) show the case where the DC voltage signal is used as a predetermined electrical signal, and the voltage value between the metal wire 30 and the bonding platform 14 as a continuous response of the electrical signal is measured. A diagram that distinguishes F1 to F4. 12(a) to 12(f) are diagrams corresponding to Figs. 11(a) to 11(f), and are composed of the six timing charts of Figs. 12(a) to 12(f). Similarly to FIGS. 11(a) to 11(f), in all of the timing charts, the horizontal axis is time. Further, the vertical axis of Fig. 12(a) is the height position of the capillary, and the vertical axis of Figs. 12(b) to 12(f) is the voltage value between the metal wire 30 and the bonding stage 14.

圖12(a)與圖11(a)同樣地與圖3的最上段的圖對應。橫軸的時間t3、時間t4、時間t12、時間t13、時間t14亦與圖11(a)~圖11(f)同樣,與圖3中所說明的內容相同,因此省略詳細的說明。 Fig. 12(a) corresponds to the uppermost diagram of Fig. 3 in the same manner as Fig. 11(a). The time t 3 , the time t 4 , the time t 12 , the time t 13 , and the time t 14 on the horizontal axis are also the same as those described in FIG. 11 (a) to FIG. 11 (f), and therefore the detailed description is omitted. instruction of.

圖12(b)是表示對於在自第一接合處理之前至第二接合之後的整個期間毫無問題地進行過所有的處理的良品所測定出的電壓值的時間變化的時序圖。 Fig. 12 (b) is a timing chart showing temporal changes in voltage values measured for good products that have undergone all processes without problems during the entire period from the first bonding process to the second bonding process.

於圖12(b)中,直至時間t3之前金屬線30未接觸於電路基板8,因此於金屬線30與接合平台14之間無電氣短路,所測定的電壓值成為規定電壓值V0In in FIG. 12 (b), before the time until the metal wire 3 t 30 is not in contact with the circuit board 8, thus joining the metal wire 30 with no electrical shorting between the internet 14, the measured voltage value becomes the predetermined voltage value V 0.

若金屬線30於時間t3接觸於電路基板8,則經由電路基板8而使接合平台14與金屬線30之間產生電氣短路。藉此,所測定的電壓值成為V=0(V)。 When the metal wire 30 comes into contact with the circuit board 8 at time t 3 , an electrical short circuit occurs between the bonding stage 14 and the metal wire 30 via the circuit board 8 . Thereby, the measured voltage value becomes V=0 (V).

若金屬線30於時間t12接觸於半導體晶片6,則經由半導體晶片6及電路基板8而使接合平台14與金屬線30之間仍為 電氣短路狀態,所測定的電壓值仍為V=0(V)。若於時間t14金屬線30藉由切斷處理而切斷,成為圖10所示的狀態,則由於金屬線30自電路基板8上的半導體晶片6離開而未進行接觸,故而成為於金屬線30與接合平台14之間無電氣短路的狀態,所測定的電壓值再次成為規定電壓值V0If the metal line 30 contacts the semiconductor wafer 6 at time t 12 , the junction between the bonding platform 14 and the metal line 30 is still electrically shorted via the semiconductor wafer 6 and the circuit substrate 8 , and the measured voltage value is still V=0. (V). When the metal wire 30 is cut by the cutting process at time t 14 and the state shown in FIG. 10 is reached, the metal wire 30 is separated from the semiconductor wafer 6 on the circuit board 8 and is not in contact with each other. There is no electrical short circuit between the 30 and the joining platform 14, and the measured voltage value again becomes the predetermined voltage value V 0 .

如此,於使用直流電壓訊號作為規定的電氣訊號時,於良品的情況下,時間t3至時間t14之間的電壓值成為V=0(V)。 When so, to a DC voltage signal as a predetermined electrical signal, in the case where the yield, the time t. 3 to time t 14 becomes a voltage value between V = 0 (V).

圖12(c)是表示於第一接合點產生未接合F1時的電壓值的時間變化的時序圖。未接合F1於第一接合處理期間即時間t3與時間t4之間產生。若產生未接合F1,則由於金屬線30未牢固地連接於電路基板8,故而於金屬線30與接合平台14之間無電氣短路。因此,電壓值仍為良品時的時間t3時的電壓值即規定電壓值V0Fig. 12 (c) is a timing chart showing temporal changes in voltage values when the first junction is not joined with F1. During the process F1 are not bonded to the first bonding i.e., the time t between time t. 3 and 4 produced. When the unbonded F1 is generated, since the metal wire 30 is not firmly connected to the circuit board 8, there is no electrical short between the metal wire 30 and the bonding stage 14. Therefore, the voltage value is still the voltage value at the time t 3 when the product is good, that is, the predetermined voltage value V 0 .

為區別良品與未接合F1,可將於t3以前穩定地測定出的電壓值作為基準。例如,使用t3以前的電壓值即規定電壓值V0作為基準,使用將該規定電壓值V0與預先規定的測定裕度相加所得的值作為第一基準值J1,使用該第一基準值J1作為區別良品與F1的判斷閾值。為簡化說明,於圖12(c)中設為J1=V0。於所測定的電壓值小於J1時判斷為良品,於J1時判斷為F1。良品的一例為所測定的電壓值為V=0(V),F1的一例為所測定的電壓值仍為V0In order to distinguish between good and unjoined F1, a voltage value that is stably measured before t 3 can be used as a reference. For example, using the predetermined voltage value V 0 which is a voltage value before t 3 as a reference, a value obtained by adding the predetermined voltage value V 0 to a predetermined measurement margin is used as the first reference value J1, and the first reference is used. The value J1 is used as a judgment threshold for distinguishing between good products and F1. To simplify the explanation, it is set as J1 = V 0 in Fig. 12 (c). When the measured voltage value is less than J1, it is judged to be good, and when J1 is judged to be F1. An example of a good product is that the measured voltage value is V = 0 (V), and an example of F1 is that the measured voltage value is still V 0 .

圖12(d)是表示第一接合點的處理正常,於時間t3所測定的電壓值成為V=0(V),但於線弧形成處理中產生金屬線30的中途切斷F2時的電壓值的時間變化的時序圖。中途切斷F2 於時間t4與時間t12之間產生。若產生中途切斷F2,則由於金屬線30自電路基板8離開,故而成為金屬線30與接合平台14之間無電氣短路的狀態,所測定的電壓值成為比良品時的時間t4時的電壓值V=0(V)大的值。 Fig. 12 (d) shows that the processing of the first junction is normal, and the voltage value measured at time t 3 is V = 0 (V), but when F2 is cut in the middle of the wire 30 in the line arc forming process. Timing diagram of the time variation of the voltage value. The cut off F2 is generated between time t 4 and time t 12 . If F2 of being interrupted is generated, since the wire 30 away from the circuit board 8, and therefore a state engaged with the platform 14 without an electrical short between the metal wire 30, the measured voltage value becomes more than the time t 4 at yield A value at which the voltage value V = 0 (V) is large.

為區別良品與中途切斷F2,可將於t4以後穩定地測定出的電壓值作為基準。例如,使用t4時的電壓值V=0(V)作為基準,使用將該V=0(V)與預先規定的測定裕度相加所得的值作為第二基準值J2,使用該第二基準值J2作為區別良品與F2的判斷閾值。為簡化說明,於圖12(d)中設為J2=0(V)。於所測定的電壓值仍為J2時判斷為良品,於超過J2時判斷為F2。良品的一例為所測定的電壓值為V=0(V),F2的一例為所測定的電壓值為V0In order to distinguish between good products and cut off F2 in the middle, the voltage value measured stably after t 4 can be used as a reference. For example, using the voltage value V=0 (V) at t 4 as a reference, a value obtained by adding the V=0 (V) to a predetermined measurement margin is used as the second reference value J2, and the second is used. The reference value J2 is used as a judgment threshold for distinguishing between good products and F2. To simplify the description, J2 = 0 (V) is set in Fig. 12 (d). When the measured voltage value is still J2, it is judged to be good, and when it exceeds J2, it is judged as F2. An example of a good product is that the measured voltage value is V = 0 (V), and an example of F2 is that the measured voltage value is V 0 .

圖12(e)是表示線弧形成處理正常,但於第二接合點產生未接合F3時的電壓值的時間變化的時序圖。未接合F3於時間t12與時間t13之間產生。若產生未接合F3,則由於金屬線30未牢固地連接於半導體晶片6,故而於金屬線30與接合平台14之間無電氣短路。因此,電壓值成為規定電壓值V0Fig. 12(e) is a timing chart showing temporal changes in the voltage value when the line arc forming process is normal, but when the second junction is not joined to F3. Unjoined F3 is produced between time t 12 and time t 13 . If the unbonded F3 occurs, since the metal wire 30 is not firmly connected to the semiconductor wafer 6, there is no electrical short between the metal wire 30 and the bonding stage 14. Therefore, the voltage value becomes the predetermined voltage value V 0 .

為區別良品與未接合F3,可將於t4以後穩定地測定出的電壓值作為基準。例如,使用t4時的電壓值V=V(V)作為基準,使用將該V=0(V)與預先規定的測定裕度相加所得的值作為第三基準值J3,使用該第三基準值J3作為區別良品與F3的判斷閾值。為簡化說明,於圖12(e)中設為J3=J2=0(V)。若所測定的電壓值仍為J3,則判斷為良品,於超過J3時判斷為F3。良品的一例為所測定的電壓值為V=0(V),F3的一例為所測定 的電壓值為V0In order to distinguish between good and unjoined F3, the voltage value measured stably after t 4 can be used as a reference. For example, using the voltage value V=V(V) when t 4 is used as a reference, a value obtained by adding the V=0 (V) to a predetermined measurement margin is used as the third reference value J3, and the third is used. The reference value J3 is used as a judgment threshold for distinguishing between good products and F3. To simplify the description, it is assumed that J3 = J2 = 0 (V) in Fig. 12 (e). If the measured voltage value is still J3, it is judged to be good, and when it exceeds J3, it is judged as F3. An example of a good product is that the measured voltage value is V = 0 (V), and an example of F3 is that the measured voltage value is V 0 .

圖12(f)是表示第二接合點的處理正常,雖然於時間t12所測定的電壓值仍為V=0(V),但於之後的金屬線切斷處理之前產生金屬線30的中途切斷F4時的電壓值的時間變化的時序圖。中途切斷F4於時間t13與時間t14之間產生。若產生中途切斷F4,則由於金屬線30自半導體晶片6離開,故而成為於金屬線30與接合平台14之間無電氣短路的狀態。所測定的電壓值成為比良品時的時間t13時的電壓值V=0(V)更大的值。 Fig. 12 (f) shows that the processing of the second junction is normal. Although the voltage value measured at time t 12 is still V = 0 (V), the middle of the metal line 30 is generated before the subsequent metal wire cutting process. A timing chart showing the time variation of the voltage value when F4 is turned off. Midway cut F4 is generated between time t 13 and time t 14 . When the F4 is cut in the middle, the metal wire 30 is separated from the semiconductor wafer 6, so that there is no electrical short circuit between the metal wire 30 and the bonding stage 14. The measured voltage value is a value larger than the voltage value V=0 (V) at the time t 13 at the time of good product.

為區別良品與中途切斷F4,可將於t13以前穩定地測定出的電壓值作為基準。例如,使用t13時的電壓值V=0(V)作為基準,使用將該V=0(V)與預先規定的測定裕度相減所得的值作為第四基準值J4,使用該第四基準值J4作為區別良品與F4的判斷閾值。為簡化說明,於圖12(f)中設為J4=J3=J2=0(V)。於所測定的電壓值仍為J4時判斷為良品,於超過J4時判斷為F4。良品的一例為所測定的電壓值為V=0(V),F4的一例為所測定的電壓值為V0In order to distinguish between good products and cut off F4 in the middle, the voltage value measured stably before t 13 can be used as a reference. For example, using the voltage value V=0 (V) at t 13 as a reference, a value obtained by subtracting the V=0 (V) from a predetermined measurement margin is used as the fourth reference value J4, and the fourth is used. The reference value J4 is used as a judgment threshold for distinguishing between good products and F4. To simplify the explanation, it is assumed that J4 = J3 = J2 = 0 (V) in Fig. 12 (f). When the measured voltage value is still J4, it is judged to be good, and when it exceeds J4, it is judged as F4. An example of a good product is that the measured voltage value is V = 0 (V), and an example of F4 is that the measured voltage value is V 0 .

如此,規定的電氣訊號使用直流電壓訊號,且分別對應於F1至F4而將第一基準值J1至第四基準值J4設為判斷基準,藉此可區別第一接合點的未接合F1、線弧形成處理中的中途切斷F2、第接合點的未接合F3、金屬線切斷處理之前的中途切斷F4。尤其是可設為J2=J3=J4=0(V),從而測定判斷變得容易。 In this way, the predetermined electrical signal uses the DC voltage signal, and the first reference value J1 to the fourth reference value J4 are set as the judgment reference corresponding to F1 to F4, respectively, thereby distinguishing the unjoined F1 line of the first joint point. In the arc forming process, the F2 is cut in the middle, the unjoined F3 at the joint is cut, and the F4 is cut in the middle before the wire cutting process. In particular, J2 = J3 = J4 = 0 (V) can be set, and measurement and determination become easy.

於上述中,第一接合點及第二接合點的打線是以使用毛細管的楔形接合方式進行說明,但亦能夠以球形接合方式進行。 In the above, the wire bonding of the first joint and the second joint is described by a wedge joint using a capillary tube, but it can also be performed by a spherical joint method.

本發明並不限定於以上所說明的實施方式,且包含不脫 離由申請專利範圍所規定的本發明的技術範圍乃至本質的所有變更及修正。 The present invention is not limited to the embodiments described above, and includes All changes and modifications of the technical scope and nature of the invention as defined by the scope of the claims.

[產業上的可利用性] [Industrial availability]

本發明可利用於使用毛細管進行打線的裝置以及方法。 The present invention can be utilized in an apparatus and method for wire bonding using a capillary.

6‧‧‧半導體晶片 6‧‧‧Semiconductor wafer

8‧‧‧電路基板 8‧‧‧ circuit board

10‧‧‧打線裝置 10‧‧‧Wireing device

12‧‧‧台座 12‧‧‧ pedestal

14‧‧‧接合平台 14‧‧‧Joining platform

16‧‧‧XY平台 16‧‧‧XY platform

18‧‧‧接合頭 18‧‧‧ Bonding head

20‧‧‧Z向馬達 20‧‧‧Z-direction motor

22‧‧‧Z向驅動臂 22‧‧‧Z-direction drive arm

24‧‧‧超音波轉換器 24‧‧‧Ultrasonic Converter

26‧‧‧超音波振動器 26‧‧‧Ultrasonic vibrator

28‧‧‧毛細管 28‧‧‧ Capillary

30‧‧‧金屬線 30‧‧‧Metal wire

32‧‧‧線夾 32‧‧‧Clamps

33‧‧‧線軸 33‧‧‧ spool

34‧‧‧夾具開閉部 34‧‧‧Clamp opening and closing department

36‧‧‧未接合判定電路 36‧‧‧Unjoined decision circuit

50‧‧‧窗式夾具 50‧‧‧window fixture

60‧‧‧電腦 60‧‧‧ computer

62‧‧‧XY平台I/F 62‧‧‧XY platform I/F

64‧‧‧Z向馬達I/F 64‧‧‧Z-direction motor I/F

66‧‧‧超音波振動器I/F 66‧‧‧Ultrasonic Vibrator I/F

68‧‧‧夾具開閉I/F 68‧‧‧Clamp opening and closing I/F

70‧‧‧未接合判定電路I/F 70‧‧‧Unjoined decision circuit I/F

80‧‧‧控制部 80‧‧‧Control Department

82‧‧‧記憶體 82‧‧‧ memory

84‧‧‧第一接合程式 84‧‧‧First joint program

86‧‧‧線弧形成程式 86‧‧‧Line arc forming program

88‧‧‧第二接合程式 88‧‧‧Second joint program

90‧‧‧未接合連續監視程式 90‧‧‧Unjoined continuous monitoring program

92‧‧‧切斷判定處理程式 92‧‧‧cut judgment handler

94‧‧‧異常輸出處理程式 94‧‧‧Exception output processing program

96‧‧‧控制程式 96‧‧‧Control program

98‧‧‧控制資料 98‧‧‧Control data

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

Claims (14)

一種打線裝置,包括:第一接合處理部,於打線的第一接合點,將接合對象物與金屬線之間進行接合;以及未接合監視部,於上述第一接合處理後,在規定的連續監視期間內,對保持於毛細管的上述金屬線與上述接合對象物之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷上述金屬線與上述接合對象物之間的連接是否變化。 A wire bonding device includes: a first bonding processing unit that bonds a bonding object and a metal wire at a first bonding point of the wire bonding; and a non-joining monitoring portion that is in a predetermined continuous state after the first bonding process During the monitoring period, a predetermined electrical signal is continuously applied between the metal wire held by the capillary and the object to be bonded, and based on the continuous response of the electrical signal, the metal wire and the object to be bonded are monitored and determined. Whether the connection changes. 如申請專利範圍第1項所述的打線裝置,其中上述規定的連續監視期間是於上述第一接合處理後使上述金屬線自上述第一接合點延出至上述打線的第二接合點為止的期間。 The wire bonding device according to claim 1, wherein the predetermined continuous monitoring period is such that after the first bonding process, the metal wire is extended from the first bonding point to the second bonding point of the bonding wire. period. 如申請專利範圍第2項所述的打線裝置,其中上述未接合監視部是對保持於上述毛細管的上述金屬線與上述接合對象物之間施加規定的電氣訊號,並取得保持於上述毛細管的上述金屬線與上述接合對象物之間的電容值,於上述第一接合處理後上述電容值降低時,判斷為上述金屬線自上述接合對象物被切斷,於之後到達上述第二接合點之前上述電容值恢復時,判斷為上述被切斷的上述金屬線垂下而接觸於上述接合對象物。 The wire bonding device according to the second aspect of the invention, wherein the non-joining monitoring unit applies a predetermined electrical signal to the metal wire held between the capillary and the bonding object, and obtains the above-mentioned capillary held by the capillary. The capacitance value between the metal wire and the bonding target is determined to be that the metal wire is cut from the bonding target after the first bonding process is lowered, and then the second bonding point is reached after the second bonding point is reached. When the capacitance value is restored, it is determined that the cut metal wire is suspended and contacts the bonding target object. 如申請專利範圍第3項所述的打線裝置,其中上述規定的電氣訊號為交流電氣訊號、直流脈波訊號中的任一種訊號。 The wire bonding device of claim 3, wherein the predetermined electrical signal is any one of an alternating current electrical signal and a direct current pulse signal. 如申請專利範圍第3項或第4項所述的打線裝置,其中上述未接合監視部是 基於將上述取得的上述電容值對時間進行微分所得的微分值,而判斷關於上述電容值的降低與恢復。 The wire bonding device according to claim 3 or 4, wherein the unjoined monitoring unit is The reduction and recovery with respect to the capacitance value are determined based on the differential value obtained by differentiating the capacitance value obtained as described above with respect to time. 如申請專利範圍第1項至第5項中任一項所述的打線裝置,其中上述第一接合點及上述第二接合點的上述打線以楔形接合方式進行。 The wire bonding device according to any one of claims 1 to 5, wherein the wire bonding of the first joint and the second joint is performed by a wedge joint. 一種打線方法,包括:第一接合處理步驟,於打線的第一接合點,將接合對象物與金屬線之間進行接合;連續監視步驟,於上述第一接合處理後,使上述金屬線自上述第一接合點延出至上述打線的第二接合點為止的期間內,對保持於毛細管的上述金屬線與接合對象物之間連續地施加規定的電氣訊號,並取得保持於上述毛細管的上述金屬線與上述接合對象物之間的電容值的變化;以及中途切斷判斷步驟,於上述第一接合處理後上述電容值降低時,判斷為上述金屬線被中途切斷,於之後到達上述第二接合點之前上述電容值恢復時,判斷為上述被中途切斷的上述金屬線垂下而接觸於上述接合對象物。 A wire bonding method includes: a first bonding process step of bonding a bonding object and a metal line at a first bonding point of the wire bonding; and a continuous monitoring step, after the first bonding process, causing the metal wire from the above A predetermined electric signal is continuously applied between the metal wire held by the capillary and the object to be bonded, and the metal held by the capillary is obtained while the first joint is extended to the second joint of the wire. a change in a capacitance value between the line and the object to be bonded; and a midway cutting determination step, when the capacitance value is lowered after the first bonding process, it is determined that the metal wire is cut in the middle, and then reaches the second When the capacitance value is restored before the joint, it is determined that the metal wire cut in the middle is suspended and contacts the object to be joined. 如申請專利範圍第7項所述的打線方法,其中上述規定的電氣訊號為交流電氣訊號、直流脈波訊號中的任一種訊號。 The wire bonding method according to claim 7, wherein the predetermined electrical signal is any one of an alternating current electrical signal and a direct current pulse signal. 一種打線裝置,包括:第一接合處理部,於打線的第一接合點,將第一接合對象物與金屬線之間進行接合;線弧形成處理部,使上述金屬線一面自上述第一接合點延出至第二接合點而形成規定的線弧一面移動; 第二接合處理部,於上述第二接合點,將第二接合對象物與上述金屬線之間進行接合;以及未接合監視部,於自上述第一接合處理之前至上述第二接合之後的整個期間,對保持於毛細管的上述金屬線與保持上述第一接合對象物及上述第二接合對象物的接合平台之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷上述金屬線的連接狀態有無變化。 A wire bonding device includes: a first bonding processing unit that bonds a first bonding object and a metal wire at a first bonding point of the wire bonding; and a wire arc forming processing portion that causes the metal wire side to be bonded from the first bonding The point is extended to the second joint to form a predetermined line arc and moves; a second bonding processing unit that bonds the second bonding object to the metal line at the second bonding point; and the unbonded monitoring portion, from before the first bonding process to after the second bonding During the period, a predetermined electrical signal is continuously applied between the metal wire held by the capillary and the bonding platform holding the first bonding object and the second bonding object, and is monitored and judged based on the continuous response of the electrical signal. There is no change in the connection state of the above metal wires. 如申請專利範圍第9項所述的打線裝置,其中上述未接合監視部是基於上述金屬線與上述接合平台之間的電容值的變化、或電氣短路有無的變化,而監視並判斷上述金屬線的連接狀態有無變化。 The wire bonding device according to claim 9, wherein the unjoined monitoring unit monitors and determines the wire based on a change in a capacitance value between the metal wire and the bonding platform or a change in an electrical short circuit. There is no change in the connection status. 如申請專利範圍第10項所述的打線裝置,其中上述未接合監視部是將上述第一接合處理前的期間內的上述連續響應的穩定值設為第一基準值,基於上述第一基準值而判斷上述第一接合點的上述金屬線與上述第一接合對象物之間的上述連接狀態有無變化,將上述第一接合處理完成時的上述連續響應的穩定值設為第二基準值,基於上述第二基準值而判斷上述線弧形成處理期間內的上述金屬線的上述連接狀態有無變化,將上述線弧形成處理期間內的連續響應的穩定值設為第三基準值,基於上述第三基準值而判斷上述第二接合點的上述金屬線與上述第二接合對象物之間的上述連接狀態有無變化,將上述第二接合處理完成時的上述連續響應的穩定值設為第 四基準值,基於上述第四基準值而判斷自上述第二接合點至上述金屬線的切斷處理完成的期間內的上述金屬線的上述連接狀態有無變化。 The wire bonding device according to claim 10, wherein the unjoined monitoring unit sets a stable value of the continuous response in a period before the first joining process as a first reference value, based on the first reference value. And determining whether the connection state between the metal wire of the first joint and the first joint object is changed, and setting a stable value of the continuous response when the first joining process is completed as a second reference value, based on The second reference value is used to determine whether or not the connection state of the metal wire in the line arc forming process period is changed, and the stable value of the continuous response in the line arc forming process period is set to a third reference value, based on the third The reference value determines whether the connection state between the metal wire and the second bonding object of the second bonding point is changed, and the stable value of the continuous response when the second bonding process is completed is The four reference values determine whether or not the connection state of the metal wire in the period from the second junction to the completion of the cutting process of the metal wire is changed based on the fourth reference value. 如申請專利範圍第11項所述的打線裝置,其中上述未接合監視部是將上述接合平台的電位設為接地電壓值,將具有與上述接地電壓值僅相差規定電壓值的電壓的直流電壓訊號作為上述規定的電氣訊號而施加於上述金屬線,將上述第一基準值設為上述規定電壓值,將上述第二基準值至上述第四基準值設為上述接地電壓值,而判斷上述金屬線的上述連接狀態有無變化。 The wire bonding device according to claim 11, wherein the non-joining monitoring unit is a DC voltage signal having a potential of the bonding platform set to a ground voltage value and having a voltage different from the ground voltage value by a predetermined voltage value. The electric wire is applied to the metal wire as the predetermined electric current signal, and the first reference value is set to the predetermined voltage value, and the second reference value to the fourth reference value are used as the ground voltage value to determine the metal wire. There is no change in the above connection state. 如申請專利範圍第9項所述的打線裝置,其中上述第一接合點及上述第二接合點的打線是以楔形接合方式或球形接合方式進行。 The wire bonding device according to claim 9, wherein the wire bonding of the first joint and the second joint is performed by a wedge bonding method or a ball bonding method. 一種打線方法,包括:第一接合處理步驟,於打線的第一接合點,將第一接合對象物與金屬線之間進行接合;線弧形成處理步驟,使上述金屬線一面自上述第一接合點延出至第二接合點而形成規定的線弧一面移動;第二接合處理步驟,於上述第二接合點,將第二接合對象物與上述金屬線之間進行接合;以及未接合監視步驟,於自上述第一接合處理之前至上述第二接合之後的整個期間,對保持於毛細管的上述金屬線與保持上述第一接合對象物及上述第二接合對象物的接合平台之間連續地施加規定的電氣訊號,基於該電氣訊號的連續響應,而監視並判斷上 述金屬線的連接狀態有無變化。 A wire bonding method includes: a first bonding processing step of bonding a first bonding object and a metal wire at a first bonding point of the wire bonding; and a wire arc forming processing step of causing one side of the metal wire to be bonded from the first bonding a point is extended to the second joint to form a predetermined line arc, and a second joining process is performed to bond the second object to be joined to the wire at the second joint; and the unjoining monitoring step Continuously applying between the metal wire held by the capillary and the bonding platform holding the first bonding object and the second bonding object, from before the first bonding process to after the second bonding The specified electrical signal is monitored and judged based on the continuous response of the electrical signal Whether the connection state of the metal wire changes.
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