TW201512373A - Compound and organic electroluminescence element - Google Patents
Compound and organic electroluminescence element Download PDFInfo
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- TW201512373A TW201512373A TW103129534A TW103129534A TW201512373A TW 201512373 A TW201512373 A TW 201512373A TW 103129534 A TW103129534 A TW 103129534A TW 103129534 A TW103129534 A TW 103129534A TW 201512373 A TW201512373 A TW 201512373A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 136
- 238000005401 electroluminescence Methods 0.000 title claims description 7
- 125000001424 substituent group Chemical group 0.000 claims abstract description 87
- 125000003118 aryl group Chemical group 0.000 claims abstract description 45
- 125000003277 amino group Chemical group 0.000 claims abstract description 38
- 125000006165 cyclic alkyl group Chemical group 0.000 claims abstract description 37
- 125000005843 halogen group Chemical group 0.000 claims abstract description 36
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract description 32
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 claims abstract description 31
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 31
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract description 31
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 27
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 26
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 21
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 19
- 150000002431 hydrogen Chemical group 0.000 claims abstract description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 6
- 239000011593 sulfur Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 198
- 230000005525 hole transport Effects 0.000 claims description 103
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical class C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 claims description 22
- 150000004826 dibenzofurans Chemical class 0.000 claims description 20
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 15
- 238000006467 substitution reaction Methods 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- ABMKWMASVFVTMD-UHFFFAOYSA-N 1-methyl-2-(2-methylphenyl)benzene Chemical group CC1=CC=CC=C1C1=CC=CC=C1C ABMKWMASVFVTMD-UHFFFAOYSA-N 0.000 claims description 8
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical group C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 abstract description 3
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 276
- -1 oxazole compound Chemical class 0.000 description 121
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 63
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 60
- 238000002347 injection Methods 0.000 description 39
- 239000007924 injection Substances 0.000 description 39
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 37
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 29
- 239000012074 organic phase Substances 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 28
- 239000000758 substrate Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 239000000203 mixture Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000003786 synthesis reaction Methods 0.000 description 20
- 239000002904 solvent Substances 0.000 description 19
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 18
- 239000007787 solid Substances 0.000 description 16
- BWHDROKFUHTORW-UHFFFAOYSA-N tritert-butylphosphane Chemical compound CC(C)(C)P(C(C)(C)C)C(C)(C)C BWHDROKFUHTORW-UHFFFAOYSA-N 0.000 description 16
- 229910052938 sodium sulfate Inorganic materials 0.000 description 15
- 235000011152 sodium sulphate Nutrition 0.000 description 15
- 238000005481 NMR spectroscopy Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- YERGTYJYQCLVDM-UHFFFAOYSA-N iridium(3+);2-(4-methylphenyl)pyridine Chemical compound [Ir+3].C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1 YERGTYJYQCLVDM-UHFFFAOYSA-N 0.000 description 14
- 238000003756 stirring Methods 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 239000008346 aqueous phase Substances 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 10
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- 238000001914 filtration Methods 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 9
- 238000004440 column chromatography Methods 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 239000000499 gel Substances 0.000 description 8
- 150000002484 inorganic compounds Chemical class 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 7
- 238000001748 luminescence spectrum Methods 0.000 description 7
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- 125000006267 biphenyl group Chemical group 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 238000004770 highest occupied molecular orbital Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000010898 silica gel chromatography Methods 0.000 description 6
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000012300 argon atmosphere Substances 0.000 description 5
- HRQXKKFGTIWTCA-UHFFFAOYSA-L beryllium;2-pyridin-2-ylphenolate Chemical compound [Be+2].[O-]C1=CC=CC=C1C1=CC=CC=N1.[O-]C1=CC=CC=C1C1=CC=CC=N1 HRQXKKFGTIWTCA-UHFFFAOYSA-L 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- 125000003943 azolyl group Chemical group 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000012043 crude product Substances 0.000 description 4
- UZVGSSNIUNSOFA-UHFFFAOYSA-N dibenzofuran-1-carboxylic acid Chemical compound O1C2=CC=CC=C2C2=C1C=CC=C2C(=O)O UZVGSSNIUNSOFA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 150000001793 charged compounds Chemical class 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003480 eluent Substances 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004128 high performance liquid chromatography Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- LXNAVEXFUKBNMK-UHFFFAOYSA-N palladium(II) acetate Substances [Pd].CC(O)=O.CC(O)=O LXNAVEXFUKBNMK-UHFFFAOYSA-N 0.000 description 3
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 3
- 125000004076 pyridyl group Chemical group 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 238000004448 titration Methods 0.000 description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 description 3
- JRTIUDXYIUKIIE-KZUMESAESA-N (1z,5z)-cycloocta-1,5-diene;nickel Chemical compound [Ni].C\1C\C=C/CC\C=C/1.C\1C\C=C/CC\C=C/1 JRTIUDXYIUKIIE-KZUMESAESA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 2
- GJXAVNQWIVUQOD-UHFFFAOYSA-N 4-bromodibenzothiophene Chemical compound S1C2=CC=CC=C2C2=C1C(Br)=CC=C2 GJXAVNQWIVUQOD-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- 125000005874 benzothiadiazolyl group Chemical group 0.000 description 2
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 125000002720 diazolyl group Chemical group 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 125000002541 furyl group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- NDJKXXJCMXVBJW-UHFFFAOYSA-N heptadecane Chemical compound CCCCCCCCCCCCCCCCC NDJKXXJCMXVBJW-UHFFFAOYSA-N 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 125000001786 isothiazolyl group Chemical group 0.000 description 2
- 238000000504 luminescence detection Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 125000002971 oxazolyl group Chemical group 0.000 description 2
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 2
- 125000005561 phenanthryl group Chemical group 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229960005235 piperonyl butoxide Drugs 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- CUQOHAYJWVTKDE-UHFFFAOYSA-N potassium;butan-1-olate Chemical compound [K+].CCCC[O-] CUQOHAYJWVTKDE-UHFFFAOYSA-N 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 125000003226 pyrazolyl group Chemical group 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000001113 thiadiazolyl group Chemical group 0.000 description 2
- 125000000335 thiazolyl group Chemical group 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 238000004809 thin layer chromatography Methods 0.000 description 2
- 150000003613 toluenes Chemical class 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 2
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 1
- 239000004912 1,5-cyclooctadiene Substances 0.000 description 1
- WMZCREDANYEXRT-UHFFFAOYSA-N 1-[phenyl(pyren-1-yl)phosphoryl]pyrene Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1P(C=1C2=CC=C3C=CC=C4C=CC(C2=C43)=CC=1)(=O)C1=CC=CC=C1 WMZCREDANYEXRT-UHFFFAOYSA-N 0.000 description 1
- LFKNYYQRWMMFSM-UHFFFAOYSA-N 1-ethyl-9h-carbazole;formaldehyde Chemical compound O=C.N1C2=CC=CC=C2C2=C1C(CC)=CC=C2 LFKNYYQRWMMFSM-UHFFFAOYSA-N 0.000 description 1
- 125000006218 1-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006219 1-ethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- SNHMUERNLJLMHN-UHFFFAOYSA-N iodobenzene Chemical compound IC1=CC=CC=C1 SNHMUERNLJLMHN-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001296 phosphorescence spectrum Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
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- 239000005020 polyethylene terephthalate Substances 0.000 description 1
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- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
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- 150000003248 quinolines Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- DYVOLUUJJDFBFC-UHFFFAOYSA-N tripotassium butan-1-olate Chemical compound [K+].[K+].[K+].CCCC[O-].CCCC[O-].CCCC[O-] DYVOLUUJJDFBFC-UHFFFAOYSA-N 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/91—Dibenzofurans; Hydrogenated dibenzofurans
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1088—Heterocyclic compounds characterised by ligands containing oxygen as the only heteroatom
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1092—Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
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Abstract
Description
本發明關於一種化合物及具有電洞輸送層的有機電致發光(以下略為有機EL)元件,該電動輸送層含有該化合物。 The present invention relates to a compound and an organic electroluminescence (hereinafter abbreviated as organic EL) element having a hole transporting layer containing the compound.
有機EL元件具有以陰極與陽極夾持發光材料的結構,該發光材料係利用電場而發光。有機EL元件係一種使從電極注入之電洞與電子在發光層內再結合藉此而使發光材料發光之元件。 The organic EL element has a structure in which a luminescent material is sandwiched between a cathode and an anode, and the luminescent material emits light by an electric field. The organic EL element is an element that recombines a hole injected from an electrode and electrons in the light-emitting layer to cause the light-emitting material to emit light.
有機EL元件為自發光型,視野角度廣且能見度優良。因此,有機EL元件被用作顯示器等之顯示元件。此外,有機EL元件為薄型固體元件,可輕量化且強度亦佳。因此,使用有機EL元件之顯示器不僅侷限於電視等之靜置型,在行動式用途上亦是有用。又,由於使用有機EL元件之顯示元件可容易變更大小且以整面發光,就照明用途而言亦是有用。 The organic EL element is self-luminous, and has a wide viewing angle and excellent visibility. Therefore, the organic EL element is used as a display element of a display or the like. Further, the organic EL element is a thin solid element, which is lightweight and excellent in strength. Therefore, the display using the organic EL element is not limited to a stationary type such as a television, and is also useful for mobile use. Further, since the display element using the organic EL element can be easily changed in size and emitted on the entire surface, it is also useful for illumination applications.
有機EL元件之課題可列舉如發光效率(外部量子效率)之提升與長壽命化。為了解決上述課題,迄今已下足了各種工夫。 The subject of the organic EL element is, for example, an improvement in luminous efficiency (external quantum efficiency) and a long life. In order to solve the above problems, various efforts have been made so far.
舉例來說,有機EL元件除了電極與發光層之外,多半設有電洞注入層、電洞輸送層、電子輸送層及電子注入層。通常此等之層係以陽極、電洞注入層、電洞輸送層、發光層、電子輸送層、電子注入層、陰極之順序層積。除了電極與發光層之外,藉由設置此等之層,可提高電洞與電子在發光層內再結合之機率,進而可提高有機EL元件之發光效率。 For example, the organic EL element is provided with a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in addition to the electrode and the light-emitting layer. Usually, these layers are laminated in the order of an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. In addition to the electrodes and the light-emitting layer, by providing such layers, the probability of recombination of the holes and electrons in the light-emitting layer can be improved, and the luminous efficiency of the organic EL element can be improved.
此外,為了使有機EL元件高效率化,已有使用磷光材料來作為發光層之發光材料的提議。發光材料在獲得能量而呈現激發狀態時,會以1:3之機率生成激發單態(S1)與激發三重態(T1)。接著,發光材料從激發狀態回復到基態時,則將能量以光的形式釋放出。 Further, in order to increase the efficiency of the organic EL element, a phosphorescent material has been proposed as a light-emitting material of the light-emitting layer. When the luminescent material exhibits an excited state, the excited singlet state (S 1 ) and the excited triplet state (T 1 ) are generated at a probability of 1:3. Then, when the luminescent material returns from the excited state to the ground state, the energy is released in the form of light.
發光材料使用螢光材料時,只有源自S1之能量會轉換為光。相對於此,使用磷光材料時,源自T1之能量也會轉換為光。因此,相較於發光材料使用螢光材料之有機EL元件,使用磷光材料之有機EL元件更可望高效率化(例如參照非專利文獻1及非專利文獻2)。 When a luminescent material is used as a fluorescent material, only the energy derived from S 1 is converted into light. In contrast, when a phosphorescent material is used, the energy derived from T 1 is also converted into light. Therefore, an organic EL device using a phosphor material is more efficient than an organic EL device using a fluorescent material as a light-emitting material (see, for example, Non-Patent Document 1 and Non-Patent Document 2).
磷光材料通常與主體材料一起使用。在具有含主體材料與磷光材料之發光層的有機EL元件中,因電洞與電子之再結合而被激發之主體材料的能量會移動到磷光材料。磷光材料因該能量被激發而釋放光能。為了使主體材料到磷光材料之有效率能量移動成為可能,有必要使主體材料之激發三重態(T1)的能量較客體材料之磷光材料更大(例如參照非專利文獻3)。 Phosphorescent materials are typically used with host materials. In an organic EL device having a light-emitting layer containing a host material and a phosphorescent material, energy of a host material excited by recombination of a hole and electrons moves to a phosphorescent material. The phosphorescent material releases light energy as the energy is excited. In order to make efficient energy transfer of the host material to the phosphor material, it is necessary to make the energy of the excited triplet state (T 1 ) of the host material larger than that of the phosphor material of the guest material (for example, refer to Non-Patent Document 3).
迄今,已有多數可用於發光層之主體材料被提出報告。例如,主體材料可列舉咔唑系化合物等(例如參照非專利文獻4)。就咔唑系化合物而言,下述通式(3)所示之CBP等可適於用作主體材料(例如參照非專利文獻5)。 To date, most of the host materials available for the luminescent layer have been reported. For example, the host material may be an oxazole compound or the like (for example, refer to Non-Patent Document 4). For the carbazole-based compound, CBP or the like represented by the following formula (3) can be suitably used as a host material (for example, refer to Non-Patent Document 5).
咔唑系化合物所構成之主體材料具有相對較大之T1能量。然而,客體材料之T1能量過大時,主體材料即便使用CBP有時仍無法充分提高發光效率。因此,有時也會有使用令T1能量更增大之下述通式(4)所示CDBP來作為咔唑系化合物所構成之主體材料(例如參照非專利文獻3)。 The host material composed of the carbazole compound has a relatively large T 1 energy. However, when the T 1 energy of the guest material is too large, the host material may not sufficiently improve the luminous efficiency even when CBP is used. Therefore, a CDBP represented by the following general formula (4) in which the energy of T 1 is further increased may be used as a host material composed of an oxazole compound (see, for example, Non-Patent Document 3).
一般而言,用作主體材料之咔唑系化合物會顯示出電洞輸送性。 In general, a carbazole-based compound used as a host material exhibits hole transportability.
用作主體材料之電子輸送性材料或二電荷輸送性材料也有多數被提出報告(例如參照非專利文獻6)。即使是發光 層含主體材料與由發光材料構成之客體材料且主體材料使用電子輸送性材料或二電荷輸送性材料之有機EL元件,仍需使主體材料本身之T1能量較客體材料更大。 A large number of electron transporting materials or two-charge transporting materials used as host materials have also been reported (for example, refer to Non-Patent Document 6). Even if the luminescent layer contains the host material and the guest material composed of the luminescent material and the host material uses an organic EL element of an electron transporting material or a second charge transporting material, it is necessary to make the T 1 energy of the host material itself larger than the guest material.
此外,為了使有機EL元件高效率化,現正需求可獲得高電洞輸送性、高電子阻擋性、高T1能量之電洞輸送層。此外,為了使有機EL元件長壽命化,對於用在電洞輸送層之電洞輸送層材料,則索求高度之電/熱安定性(例如參照非專利文獻7及非專利文獻8)。 Further, in order to increase the efficiency of the organic EL element, there is a demand for a hole transport layer which can obtain high hole transportability, high electron blocking property, and high T 1 energy. In addition, in order to extend the life of the organic EL device, a high electrical/thermal stability is required for the material of the hole transport layer used in the hole transport layer (see, for example, Non-Patent Document 7 and Non-Patent Document 8).
用於電洞輸送層之電洞輸送層材料從使用其之電洞輸送層的電洞輸送性、電子阻擋性之觀點來看,必須是HOMO位準、LUMO位準、帶隙能量等之電特性會呈適切值之物。電洞輸送層之電特性之適切值會依配置於電洞輸送層兩面之層的材料而發生變化。特別是,電洞輸送層之電特性宜為可對應發光層材料的適切值,該發光層則配置在電洞輸送層之單側。 The hole transport layer material used for the hole transport layer must be HOMO level, LUMO level, band gap energy, etc. from the viewpoint of hole transportability and electron blockage of the hole transport layer using the hole transport layer. The characteristics will be of a suitable value. The appropriate value of the electrical characteristics of the hole transport layer varies depending on the material disposed on both sides of the hole transport layer. In particular, the electrical characteristics of the hole transport layer are preferably adapted to the material of the luminescent layer, and the luminescent layer is disposed on one side of the hole transport layer.
例如,在電洞輸送層之一面之側上,配置發光材料使用一般綠色發光材料或藍色發光材料之發光層,另一面之側則配置有PEDOT:PSS所構成之電洞注入層時,電洞輸送層材料宜使用HOMO位準會在-5.0~-6.0eV附近之物。藉由使用此種電洞輸送層材料使HOMO位準適切,可形成可得優異電洞輸送性之電洞輸送層。 For example, on the side of one side of the hole transport layer, the luminescent material is provided with a luminescent layer of a general green luminescent material or a blue luminescent material, and the other side is provided with a hole injection layer composed of PEDOT:PSS. The material of the hole transport layer should be used in the vicinity of -5.0~-6.0eV. By using such a hole transport layer material to make the HOMO level suitable, a hole transport layer capable of obtaining excellent hole transportability can be formed.
此外,電洞輸送層之LUMO位準宜為較發光層之LUMO位準更高之值。例如,發光材料之LUMO位準為-2.8eV時,宜令電洞輸送層之LUMO位準在-2.8eV以上,更 宜為-2.6eV以上。藉由使用會呈現此種LUMO位準之電洞輸送層材料,可獲得具有將注入到發光層內之電子封閉住之電子阻擋效果的電洞輸送層。 In addition, the LUMO level of the hole transport layer should be higher than the LUMO level of the light-emitting layer. For example, when the LUMO level of the luminescent material is -2.8 eV, the LUMO level of the hole transport layer should be above -2.8 eV, and It should be -2.6eV or more. By using a hole transport layer material that exhibits such a LUMO level, a hole transport layer having an electron blocking effect of encapsulating electrons injected into the light-emitting layer can be obtained.
此外,電洞輸送層之帶隙能量必然取決於HOMO位準與LUMO位準。為了使有機EL元件高效率化,宜使用電洞輸送層之帶隙能量會成為3.0eV以上之電洞輸送層材料。 In addition, the band gap energy of the hole transport layer necessarily depends on the HOMO level and the LUMO level. In order to increase the efficiency of the organic EL element, it is preferable to use a band gap energy of the hole transport layer to be a hole transport layer material of 3.0 eV or more.
又,發光層為客體材料使用磷光材料且主體材料使用電子輸送性材料或二電荷輸送性材料之物時,為了防止能量逆移並使有機EL元件高效率化,不僅主體材料,電洞輸送層材料之T1能量亦甚重要。具體來說,宜使電洞輸送層材料之T1能量較客體材料之T1能量更大。例如,客體材料使用綠色磷光材料之Ir(mppy)3時,客體材料之T1能量會成為2.35eV。因此,主體材料及電洞輸送層材料之T1能量宜為2.35eV以上之值。 Further, when the light-emitting layer is a phosphor material for the guest material and the electron transport material or the second charge transport material is used as the host material, in order to prevent the energy from being reversed and the organic EL element is made more efficient, not only the host material but also the hole transport layer. The T 1 energy of the material is also important. Specifically, should the electrical hole transport layer material of the T 1 energy greater than the energy of a guest material of T. For example, when the guest material uses Ir(mppy) 3 of a green phosphorescent material, the T 1 energy of the guest material becomes 2.35 eV. Therefore, the T 1 energy of the host material and the hole transport layer material is preferably a value of 2.35 eV or more.
電洞輸送層材料已有下述通式(5)所示之DBTPB被報告提出(例如參照專利文獻1)。DBTPB之T1能量為2.35eV,與一般磷光材料之Ir(mppy)3同等。因此,客體材料使用Ir(mppy)3時,電洞輸送層材料宜使用T1能量較DBTPB更大之物。 The material of the hole transport layer has been reported as a DBTPB represented by the following formula (5) (for example, refer to Patent Document 1). DBTPB has a T 1 energy of 2.35 eV, which is equivalent to Ir(mppy) 3 of a general phosphorescent material. Therefore, when the guest material uses Ir(mppy) 3 , the material of the hole transport layer should preferably use a material having a larger T 1 energy than DBTPB.
【化3】
【專利文獻1】日本特表2011-527122號公報 [Patent Document 1] Japanese Patent Publication No. 2011-527122
【非專利文獻1】Nature, 395, 151(1998) [Non-Patent Document 1] Nature, 395, 151 (1998)
【非專利文獻2】Nature, 403, 750(2000) [Non-Patent Document 2] Nature, 403, 750 (2000)
【非專利文獻3】Appl. Phys. Lett., 83, 569(2003) [Non-Patent Document 3] Appl. Phys. Lett., 83, 569 (2003)
【非專利文獻4】Adv. Mater., 23, 926(2011) [Non-Patent Document 4] Adv. Mater., 23, 926 (2011)
【非專利文獻5】Appl. Phys. Lett., 82, 2422(2003) [Non-Patent Document 5] Appl. Phys. Lett., 82, 2422 (2003)
【非專利文獻6】Adv. Mater., 22, 3311(2010) [Non-Patent Document 6] Adv. Mater., 22, 3311 (2010)
【非專利文獻7】Adv. Mater., 24, 3212(2012) [Non-Patent Document 7] Adv. Mater., 24, 3212 (2012)
【非專利文獻8】Adv. Mater., 22, 2468(2010) [Non-Patent Document 8] Adv. Mater., 22, 2468 (2010)
本發明之課題在於提供一種可用作電洞輸送性材料之化合物,其可獲得帶隙能量大、電性及熱安定性優 異之電洞輸送層。 An object of the present invention is to provide a compound which can be used as a hole transporting material, which can obtain a band gap energy, an electric property and a thermal stability. Different hole transport layer.
此外,課題在於提供長壽命且發光效率高之有機EL元件,該有機EL元件具有含上述化合物之電洞輸送層。 Further, an object of the invention is to provide an organic EL device having a long life and high luminous efficiency, and the organic EL device has a hole transport layer containing the above compound.
本案發明人鑑於上述課題精心研究。結果,發現了一種適於用作有機EL元件之電洞輸送性材料之下述通式(1-1)所示新穎化合物。此外,業已確認將下述通式(1-1)所示化合物用作電洞輸送層材料之有機EL元件可達成長壽命化及高效率化。 The inventor of the present invention has carefully studied in view of the above problems. As a result, a novel compound represented by the following formula (1-1) which is suitable as a hole transporting material for an organic EL device has been found. In addition, it has been confirmed that an organic EL device using a compound represented by the following formula (1-1) as a material for a hole transport layer can have a long life and high efficiency.
將下述通式(1-1)所示化合物用作電洞輸送層之材料可使有機EL元件高效率化的理由,本案發明人推定如下。 The reason why the compound represented by the following formula (1-1) is used as a material of the hole transport layer to increase the efficiency of the organic EL device is as follows.
亦即,下述通式(1-1)所示化合物係一包含分子結構中心骨架的二胺基聯苯基以及2個二苯并噻吩或2個二苯并呋喃的物質。而配置在2個二苯并噻吩或2個二苯并呋喃之間的二胺基聯苯基因Xa、Xb而崩解了平面性。因此,推定使用下述通式(1-1)所示化合物之電洞輸送層的帶隙能量會變廣。更進一步來說,通式(1-1)中,Ya、Yb為以下所示之特定取代基。因此推定,具有使用通式(1-1)所示化合物之電洞輸送層的有機EL元件之電特性會成為適切之值。 That is, the compound represented by the following formula (1-1) is a substance comprising a diaminobiphenyl group having a central structure of a molecular structure and two dibenzothiophenes or two dibenzofurans. On the other hand, the diaminobiphenyl genes Xa and Xb disposed between two dibenzothiophenes or two dibenzofurans disintegrate planarity. Therefore, it is estimated that the band gap energy of the hole transport layer using the compound represented by the following formula (1-1) becomes wider. Furthermore, in the general formula (1-1), Ya and Yb are specific substituents shown below. Therefore, it is estimated that the electrical characteristics of the organic EL element having the hole transport layer using the compound represented by the general formula (1-1) become an appropriate value.
本發明之要旨如下。 The gist of the present invention is as follows.
(1)一種下述通式(1-1)所示化合物,包含配置在2個二苯并噻吩之間或2個二苯并呋喃之間之二胺基聯苯基。 (1) A compound represented by the following formula (1-1), which comprises a diaminobiphenyl group disposed between two dibenzothiophenes or between two dibenzofurans.
【化4】
於通式(1-1)中,2個A同為氧或硫;Xa、Xb各自獨立表示氫或下述(a)~(c)中之任一者,Xa與Xb中之任一者為氫時,另一者為氫以外之物;Ya、Yb各自獨立表示下述之(d);(a)為可具有取代基之直鏈或環狀之烷基或烷氧基,且(a)可具有取代基之直鏈或環狀之烷基或烷氧基的取代基為烷基、鹵基、胺基、硝基及氰基中之任一者;(b)、(d)為可具有取代基之芳香族環式基,且(b)、(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者,(b)、(d)之芳香族環式基為芳香族烴基或芳香族雜環基;(c)為鹵基、胺基、硝基及氰基中之任一者。 In the general formula (1-1), two A are the same as oxygen or sulfur; Xa and Xb each independently represent hydrogen or any one of the following (a) to (c), and either of Xa and Xb When it is hydrogen, the other is hydrogen; Ya and Yb each independently represent (d); (a) is a linear or cyclic alkyl or alkoxy group which may have a substituent, and a) the substituent of the linear or cyclic alkyl or alkoxy group which may have a substituent is any one of an alkyl group, a halogen group, an amine group, a nitro group and a cyano group; (b), (d) The aromatic cyclic group which may have a substituent, and the substituent of the aromatic ring group which may have a substituent of (b), (d) is a chain or a cyclic alkyl group, a halogen group, an amine group, and a nitrate Any one of a group and a cyano group, the aromatic ring group of (b) and (d) is an aromatic hydrocarbon group or an aromatic heterocyclic group; (c) is a halogen group, an amine group, a nitro group and a cyano group. Either.
一種如下述通式(1-2)所示之化合物,其特徵在於含有配置在2個二苯并噻吩之間或2個二苯并呋喃之間的二胺基聯苯基,且鍵結於前述二胺基聯苯基之胺基的鍵結位為4,4’位;
於通式(1-2)中,2個A同為氧或硫;Xa、Xb各自獨立表示氫或下述(a)~(c)中之任一者,且Xa與Xb中之任一者為氫時,另一者為氫以外之物;Ya、Yb各自獨立表示下述之(d);(a)為可具有取代基之直鏈或環狀之烷基或烷氧基,且(a)可具有取代基之直鏈或環狀之烷基或烷氧基的取代基為烷基、鹵基、胺基、硝基及氰基中之任一者;(b)、(d)為可具有取代基之芳香族環式基,且(b)、(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者,(b)、(d)之芳香族環式基為芳香族烴基或芳香族雜環基;(c)為鹵基、胺基、硝基及氰基中之任一者。 In the general formula (1-2), two A are the same as oxygen or sulfur; Xa and Xb each independently represent hydrogen or any one of the following (a) to (c), and any of Xa and Xb When it is hydrogen, the other is hydrogen; Ya and Yb each independently represent (d); (a) is a linear or cyclic alkyl or alkoxy group which may have a substituent, and The substituent of (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent is any one of an alkyl group, a halogen group, an amine group, a nitro group and a cyano group; (b), (d) Is an aromatic cyclic group which may have a substituent, and the substituent of the aromatic ring group which may have a substituent of (b) and (d) is a chain or a cyclic alkyl group, a halogen group, an amine group, Any one of a nitro group and a cyano group, the aromatic ring group of (b) and (d) is an aromatic hydrocarbon group or an aromatic heterocyclic group; (c) is a halogen group, an amine group, a nitro group and a cyano group. Any of them.
(3)如(1)或(2)之化合物,其中Xa與Xb中之任一者或二者為甲基。 (3) A compound according to (1) or (2), wherein either or both of Xa and Xb are a methyl group.
(4)如(1)至(3)中之任一項之化合物,其中Ya與Yb中之任 一者或二者為苯基。 (4) A compound according to any one of (1) to (3), wherein any of Ya and Yb One or both are phenyl groups.
(5)如(1)至(3)中任一項之化合物,其中Ya與Yb中之任一者或二者為2,2’-二甲基-1,1’-聯苯基。 (5) A compound according to any one of (1) to (3), wherein either or both of Ya and Yb are 2,2'-dimethyl-1,1'-biphenyl.
(6)如(1)至(5)中任一項之化合物,其中前述2個二苯并噻吩之取代位置或前述2個二苯并呋喃之取代位置為4位。 (6) The compound according to any one of (1) to (5), wherein the substitution position of the two dibenzothiophenes or the substitution position of the two dibenzofurans is 4 positions.
(7)如(1)至(5)中任一項之化合物,其中前述2個二苯并噻吩之取代位置或前述2個二苯并呋喃之取代位置為2位。 (7) The compound according to any one of (1) to (5), wherein the substitution position of the two dibenzothiophenes or the substitution position of the two dibenzofurans is two.
(8)一種有機電致發光元件,係於陰極與陽極之間具有發光層及配置在前述發光層之前述陽極側的電洞輸送層者,其特徵在於:前述電洞輸送層含有如(1)至(7)中任一項之化合物。 (8) An organic electroluminescence device comprising a light-emitting layer between a cathode and an anode and a hole transport layer disposed on the anode side of the light-emitting layer, wherein the hole transport layer contains (1) The compound of any one of (7).
(9)如(8)之有機電致發光元件,其中前述發光層含有主體材料及由發光材料構成之客體材料,且前述客體材料為電子輸送性材料、或電洞與電子之二電荷輸送性材料。 (9) The organic electroluminescence device according to (8), wherein the light-emitting layer contains a host material and a guest material composed of the light-emitting material, and the guest material is an electron transporting material or a second charge transporting property of a hole and an electron. material.
(10)如(9)之有機電致發光元件,其中客體材料為磷光材料。 (10) The organic electroluminescence device according to (9), wherein the guest material is a phosphorescent material.
本發明之化合物可用作電洞輸送性材料,其可得帶隙能量大且電性、熱安定性優異之電洞輸送層。 The compound of the present invention can be used as a hole transporting material, and it can obtain a hole transporting layer having a large band gap energy and excellent electrical and thermal stability.
此外,由於本發明之有機EL元件具有含本發明化合物之電洞輸送層,壽命長且發光效率高。特別是,發光層包含由電子輸送性材料或二電荷輸送性材料構成之主體材料與由磷光材料構成之客體材料時,可成為高發光效率之有機EL元件。 Further, since the organic EL device of the present invention has a hole transport layer containing the compound of the present invention, it has a long life and high luminous efficiency. In particular, when the light-emitting layer contains a host material composed of an electron transporting material or a two-charge transporting material and a guest material composed of a phosphorescent material, it can be an organic EL device having high luminous efficiency.
1、1A‧‧‧有機EL元件(有機電致發光元件) 1, 1A‧‧‧Organic EL elements (organic electroluminescent elements)
2‧‧‧基板 2‧‧‧Substrate
3‧‧‧第2電極 3‧‧‧2nd electrode
4‧‧‧電子注入層 4‧‧‧Electronic injection layer
5‧‧‧電子輸送層 5‧‧‧Electronic transport layer
6‧‧‧發光層 6‧‧‧Lighting layer
7‧‧‧電洞輸送層 7‧‧‧ hole transport layer
8‧‧‧電洞注入層 8‧‧‧ hole injection layer
9‧‧‧第1電極 9‧‧‧1st electrode
圖1為一用以說明本發明有機EL元件之一例的概略截面圖。 Fig. 1 is a schematic cross-sectional view for explaining an example of an organic EL device of the present invention.
圖2為一用以說明本發明有機EL元件之其他例的概略截面圖。 Fig. 2 is a schematic cross-sectional view for explaining another example of the organic EL device of the present invention.
圖3為一圖表,顯示實驗例1之薄膜、實驗例6之薄膜與DBTPB薄膜在室溫下之發光光譜測定結果。 Fig. 3 is a graph showing the results of luminescence spectrometry of the film of Experimental Example 1, the film of Experimental Example 6, and the DBTPB film at room temperature.
圖4為一圖表,顯示實驗例1之薄膜、實驗例6之薄膜與DBTPB薄膜在低溫下之發光光譜測定結果以及由Ir(mppy)3所構成之薄膜在室溫下之發光光譜測定結果。 Fig. 4 is a graph showing the results of luminescence spectrum measurement of the film of Experimental Example 1, the film of Experimental Example 6 and the DBTPB film at a low temperature, and the luminescence spectrum measurement results of a film composed of Ir(mppy) 3 at room temperature.
圖5為一圖表,顯示實驗例2及實驗例3之有機EL元件的電流密度與外部量子效率之關係。 Fig. 5 is a graph showing the relationship between the current density and the external quantum efficiency of the organic EL elements of Experimental Example 2 and Experimental Example 3.
圖6為一圖表,顯示實驗例2及實驗例3之有機EL元件的驅動時間與亮度之關係。 Fig. 6 is a graph showing the relationship between the driving time and the luminance of the organic EL elements of Experimental Example 2 and Experimental Example 3.
圖7為一圖表,顯示實驗例4及實驗例5之有機EL元件的電流密度與外部量子效率之關係。 Fig. 7 is a graph showing the relationship between the current density and the external quantum efficiency of the organic EL elements of Experimental Example 4 and Experimental Example 5.
圖8圖為一圖表,顯示實驗例4及實驗例5之有機EL元件的驅動時間與亮度之關係。 Fig. 8 is a graph showing the relationship between the driving time and the luminance of the organic EL elements of Experimental Example 4 and Experimental Example 5.
圖9為一圖表,顯示實驗例7及實驗例8之有機EL元件的電流密度與外部量子效率之關係。 Fig. 9 is a graph showing the relationship between the current density and the external quantum efficiency of the organic EL devices of Experimental Example 7 and Experimental Example 8.
以下就本發明更進一步詳細說明。 The invention is further described in detail below.
本發明之化合物為上述通式(1-1)所示者。 The compound of the present invention is represented by the above formula (1-1).
由於通式(1-1)所示化合物包含分子結構中心骨架之二胺基聯苯基與2個二苯并噻吩或2個二苯并呋喃,且令Xa、Xb、Ya、Yb為以下所示之特定物,而具有優異之電性及熱安定性。 Since the compound represented by the formula (1-1) contains a diaminobiphenyl group having a central structure of a molecular structure and two dibenzothiophenes or two dibenzofurans, and Xa, Xb, Ya, and Yb are as follows It has specific properties and excellent electrical and thermal stability.
通式(1-1)中,2個A同為氧或硫。 In the general formula (1-1), two A's are the same as oxygen or sulfur.
Xa、Xb係基於下述目的而導入:崩解分子結構中心骨架之二胺基聯苯基之平面性,增廣將其用作電洞輸送層材料之電洞輸送層的帶隙能量。 Xa and Xb are introduced for the purpose of disintegrating the planarity of the diaminobiphenyl group of the central skeleton of the molecular structure, and augmenting it as the band gap energy of the hole transport layer of the material of the hole transport layer.
Xa、Xb各自獨立表示氫或下述(a)~(c)中之任一者。Xa與Xb中之任一者為氫時,另一者為氫以外之物。 Xa and Xb each independently represent hydrogen or any one of the following (a) to (c). When either of Xa and Xb is hydrogen, the other is hydrogen.
(a)為可具有取代基之直鏈或環狀之烷基或烷氧基,且(a)可具有取代基之直鏈或環狀之烷基或烷氧基的取代基為烷基、鹵基、胺基、硝基及氰基中之任一者; (b)為可具有取代基之芳香族環式基,且(b)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者,(b)之芳香族環式基為芳香族烴基或芳香族雜環基; (c)為鹵基、胺基、硝基及氰基中之任一者。(a)可具有取代基之直鏈或環狀之烷基或烷氧基中,烷基宜為碳數1~25之烷基,且直鏈狀、分枝狀或環狀中之任一者皆可。 (a) is a linear or cyclic alkyl group or alkoxy group which may have a substituent, and (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent is an alkyl group, Any of a halogen group, an amine group, a nitro group, and a cyano group; (b) is an aromatic cyclic group which may have a substituent, and (b) the substituent of the aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group And the cyano group, the aromatic ring group of (b) is an aromatic hydrocarbon group or an aromatic heterocyclic group; (c) is any of a halogen group, an amine group, a nitro group, and a cyano group. (a) In the linear or cyclic alkyl group or alkoxy group which may have a substituent, the alkyl group is preferably an alkyl group having 1 to 25 carbon atoms, and is linear, branched or cyclic. Anyone can do it.
從熱安定性及玻璃轉移溫度之觀點來看,直鏈狀或分枝狀之烷基更宜為碳數1~15之物,且從避免Xa及/或Xb過大所致立體障礙的觀點出發,更宜為碳數1~8之物。 From the viewpoint of thermal stability and glass transition temperature, a linear or branched alkyl group is preferably a carbon number of 1 to 15, and from the viewpoint of avoiding steric hindrance caused by excessive Xa and/or Xb. It is more suitable for carbon number 1~8.
從以Xa、Xb來崩解中心骨架之二胺基聯苯基的平面性之觀點來看,環狀烷基宜為碳數3以上者。此外,從避免Xa及/或Xb過大所致立體障礙之觀點出發,環狀烷基宜為碳數8以下者。 From the viewpoint of dispersing the planarity of the diaminobiphenyl group of the central skeleton by Xa and Xb, the cyclic alkyl group is preferably a carbon number of 3 or more. Further, from the viewpoint of avoiding steric hindrance caused by excessive Xa and/or Xb, the cyclic alkyl group is preferably a carbon number of 8 or less.
作為上述(a)之碳數1~25之直鏈烷基,具體來說可列舉如甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一烷基、正十二烷基、正十三烷基、正十四烷基、正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基、正二十烷基、正二十一烷基、正二十二烷基、正二十三烷基、正二十四烷基,分枝狀烷基則可舉例如1-甲基乙基、1-甲基丙基、1-乙基丙基、1-正丙基丙基、1-甲基丁基、1乙基丁基、1-丙基丁基、1-正丁基丁基、1-甲基戊基、1乙基戊基、1-正丙基戊基、1-正戊基戊基、1-甲基己基、1-乙基己基、1-正丙基己基、1-正丁基己基、1-正戊基己基、1-正己基己基、1-甲基庚基、1-乙基庚基、1-正丙基庚基、1-正丁基庚基、1-正戊基庚基、1-正庚基庚基、1-甲基辛基、1-乙基辛基、1-正丙基辛基、1-正丁基辛基、1-正戊基辛基、1-正己基辛基、1-正庚基辛基、1-正辛基辛基、1-甲基壬基、1-乙基壬基、1-正丙基壬基、1-正丁基壬基、1-正戊基壬基、1-正己基壬基、1-正庚基壬基、1-正辛基壬基、1-正壬基壬基、1-甲基癸基、異丙基、第三丁基、2-甲基丁基、2-乙基丁基、2-正丙基戊基、2-甲基己基、2-乙基己基、2-正丙基己基、2-正丁基己基、2-甲基庚基、2-乙基庚基、2-正丙基庚基、2- 正丁基庚基、2-正戊基庚基、2-甲基辛基、2-乙基辛基、2-正丙基辛基、2-正丁基辛基、2-正戊基辛基、2-正己基辛基、2-甲基壬基、2-乙基壬基、2-正丙基壬基、2-正丁基壬基、2-正戊基壬基、2-正己基壬基、2-正庚基壬基、2-甲基癸基、2,3-二甲基丁基、2,3,3-三甲基丁基、3-甲基丁基、3-甲基戊基、3-乙基戊基、4-甲基戊基、4-乙基己基、2,3-二甲基戊基、2,4-二甲基戊基、2,4,4-三甲基戊基、2,3,3,4-四甲基戊基、3-甲基己基、2,5-二甲基己基、3-乙基己基、3,5,5-三甲基己基、4-甲基己基、6-甲基庚基、3,7-二甲基辛基、6-甲基辛基,環狀烷基則可舉例如環丙基、環丁基、環戊基、環己基、環庚基、環辛基等。 Specific examples of the linear alkyl group having 1 to 25 carbon atoms of the above (a) include methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group and n-octyl group. Base, n-decyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecane , n-octadecyl, n-nonadecyl, n-icosyl, n-docosyl, n-docosyl, n-tricosyl, n-tetracosyl, branched The alkyl group may, for example, be 1-methylethyl, 1-methylpropyl, 1-ethylpropyl, 1-n-propylpropyl, 1-methylbutyl, 1-ethylbutyl, 1 -propylbutyl, 1-n-butylbutyl, 1-methylpentyl, 1-ethylpentyl, 1-n-propylpentyl, 1-n-pentylpentyl, 1-methylhexyl, 1 -ethylhexyl, 1-n-propylhexyl, 1-n-butylhexyl, 1-n-pentylhexyl, 1-n-hexylhexyl, 1-methylheptyl, 1-ethylheptyl, 1-n-propyl Heptyl, 1-n-butylheptyl, 1-n-pentylheptyl, 1-n-heptylheptyl, 1-methyloctyl, 1-ethyloctyl, 1-n-propyloctyl, 1- n-Butyloctyl, 1-正Kesinyl, 1-n-hexyloctyl, 1-n-heptyloctyl, 1-n-octyloctyl, 1-methylindenyl, 1-ethylindenyl, 1-n-propyldecyl, 1 - n-butyl fluorenyl, 1-n-pentyl fluorenyl, 1-n-hexyl fluorenyl, 1-n-heptyl fluorenyl, 1-n-octyl fluorenyl, 1-n-decyl fluorenyl, 1-methyl fluorenyl, iso- Propyl, tert-butyl, 2-methylbutyl, 2-ethylbutyl, 2-n-propylpentyl, 2-methylhexyl, 2-ethylhexyl, 2-n-propylhexyl, 2 - n-butylhexyl, 2-methylheptyl, 2-ethylheptyl, 2-n-propylheptyl, 2- n-Butylheptyl, 2-n-pentylheptyl, 2-methyloctyl, 2-ethyloctyl, 2-n-propyloctyl, 2-n-butyloctyl, 2-n-pentyloctyl, 2-n-hexyloctyl, 2-methylindenyl, 2-ethylindenyl, 2-n-propyldecyl, 2-n-butylindenyl, 2-n-pentyldecyl, 2-n-hexyldecyl, 2-n-heptyldecyl, 2-methylindenyl, 2,3-dimethylbutyl, 2,3,3-trimethylbutyl, 3-methylbutyl, 3-methylpentyl , 3-ethylpentyl, 4-methylpentyl, 4-ethylhexyl, 2,3-dimethylpentyl, 2,4-dimethylpentyl, 2,4,4-trimethyl Pentyl, 2,3,3,4-tetramethylpentyl, 3-methylhexyl, 2,5-dimethylhexyl, 3-ethylhexyl, 3,5,5-trimethylhexyl, 4 -Methylhexyl, 6-methylheptyl, 3,7-dimethyloctyl, 6-methyloctyl, and the cyclic alkyl group may, for example, be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group or a ring. Hexyl, cycloheptyl, cyclooctyl and the like.
就上述(a)之烷基而言,從崩解中心骨架之二胺基聯苯基之平面性且避免過大之立體障礙的觀點出發,以甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正戊基及正己基為佳。就上述(a)之烷基而言,從合成容易度之觀點來看,更宜為甲基。作為上述(a)之烷基為甲基時,Xa與Xb中可僅有任一者為甲基,亦可兩者皆為甲基。從合成容易度之觀點來看,更宜兩者皆為甲基。 With respect to the alkyl group of the above (a), methyl, ethyl, n-propyl and isopropyl groups are used from the viewpoint of the planarity of the diaminobiphenyl group of the disintegration center skeleton and avoiding excessive steric hindrance. , n-butyl, tert-butyl, n-pentyl and n-hexyl are preferred. The alkyl group of the above (a) is more preferably a methyl group from the viewpoint of easiness of synthesis. When the alkyl group of the above (a) is a methyl group, only one of Xa and Xb may be a methyl group, or both of them may be a methyl group. From the standpoint of ease of synthesis, it is more preferable that both are methyl groups.
(a)可具有取代基之直鏈或環狀之烷基或烷氧基中,烷氧基為直鏈狀及分枝狀中之任一者皆可。 (a) Among the linear or cyclic alkyl groups or alkoxy groups which may have a substituent, the alkoxy group may be either linear or branched.
直鏈狀或分枝狀之烷氧基從熱安定性、玻璃轉移溫度之觀點來看以碳數1~15者為宜,且從避免過大立體障礙之觀點來看,以碳數1~8者尤佳。 The linear or branched alkoxy group preferably has a carbon number of 1 to 15 from the viewpoint of thermal stability and glass transition temperature, and has a carbon number of 1 to 8 from the viewpoint of avoiding excessive steric hindrance. Especially good.
上述(a)之烷氧基可具體列舉如甲氧基、乙氧基、 正丙氧基、正丁氧基、正戊氧基、正己氧基、正庚氧基、正辛氧基、正壬氧基、正癸氧基、正十二烷氧基、異丙氧基、2-乙基戊基氧基、2-乙基己基氧基、2-乙基庚基氧基、2-乙基辛基氧基、2-乙基壬基氧基、2-乙基癸基氧基等。 The alkoxy group of the above (a) may specifically be exemplified by a methoxy group, an ethoxy group, N-propoxy, n-butoxy, n-pentyloxy, n-hexyloxy, n-heptyloxy, n-octyloxy, n-decyloxy, n-decyloxy, n-dodecyloxy, isopropoxy , 2-ethylpentyloxy, 2-ethylhexyloxy, 2-ethylheptyloxy, 2-ethyloctyloxy, 2-ethylindenyloxy, 2-ethylindole Baseoxy and the like.
上述(a)之烷基或烷氧基的取代基可為烷基、鹵基、胺基、硝基及氰基中之任一者。上述(a)之烷基或烷氧基具有取代基時,烷基或烷氧基所具有之取代基數並未特別受限。上述(a)之烷基或烷氧基之取代基數為2以上時,該等取代基可全部相同亦可各自互異。 The substituent of the alkyl group or alkoxy group of the above (a) may be any of an alkyl group, a halogen group, an amine group, a nitro group and a cyano group. When the alkyl group or alkoxy group of the above (a) has a substituent, the number of substituents which the alkyl group or the alkoxy group has is not particularly limited. When the number of substituents of the alkyl group or alkoxy group of the above (a) is 2 or more, the substituents may be all the same or different from each other.
具有此等取代基的上述(a)之烷基或烷氧基可使分子結構中心骨架之二胺基聯苯基之平面性崩解。從避免立體障礙過大之觀點來看,作為上述(a)之取代基的烷基宜為碳數1~8之烷基。此外,作為上述(a)之取代基的鹵基尤宜為氟基。 The alkyl group or alkoxy group of the above (a) having such a substituent can cause planar disintegration of the diaminobiphenyl group of the central skeleton of the molecular structure. The alkyl group as the substituent of the above (a) is preferably an alkyl group having 1 to 8 carbon atoms from the viewpoint of avoiding excessive steric hindrance. Further, the halogen group as the substituent of the above (a) is preferably a fluorine group.
(b)可具有取代基之芳香族環式基為芳香族烴基或芳香族雜環基。 (b) The aromatic cyclic group which may have a substituent is an aromatic hydrocarbon group or an aromatic heterocyclic group.
上述(b)之芳香族烴基可列舉如碳數6~30者。碳數6~30之芳香族烴基可列舉如6π電子系、10π電子系、12π電子系及14π電子系者。芳香族烴基可具體列舉如苯基、聯苯基、萘基、聯三苯基、蒽基、薁基、茀基、芘基、菲基、naphthryl等。此等芳香族烴基之中,從合成容易度及使中心骨架之二胺基聯苯基的平面性崩解的觀點來看,以苯基及萘基為宜,苯基尤佳。 The aromatic hydrocarbon group of the above (b) may be, for example, a carbon number of 6 to 30. Examples of the aromatic hydrocarbon group having 6 to 30 carbon atoms include a 6π electron system, a 10π electron system, a 12π electron system, and a 14π electron system. Specific examples of the aromatic hydrocarbon group include a phenyl group, a biphenyl group, a naphthyl group, a terphenyl group, a fluorenyl group, a fluorenyl group, a fluorenyl group, an anthracenyl group, a phenanthryl group, a naphthryl group, and the like. Among these aromatic hydrocarbon groups, a phenyl group and a naphthyl group are preferable, and a phenyl group is particularly preferable from the viewpoints of easiness of synthesis and planar disintegration of a diaminobiphenyl group of a central skeleton.
上述(b)之芳香族雜環基可列舉如碳數1~30者。碳 數1~30之芳香族雜環基可列舉如6π電子系、10π電子系、12π電子系及14π電子系者。芳香族雜環基可具體列舉如噻吩基、呋喃基、吡咯基、噻唑基、異噻唑基、吡唑基、唑基、異唑基、吡啶基、嗒基、二唑基、咪唑基、三基、噻二唑基、苯并噻唑基、苯并咪唑基、苯并唑基、苯并二唑基、苯并三唑基、苯并噻二唑基、苯并硒二唑基、噻吩并[2,3-b]噻吩基、噻吩并[3,2-b]噻吩基、噻吩并[3,4-b]噻吩基、9-側氧茀基、咔唑基、二苯并苯硫基、矽雜芴基(silafluorenyl)、硒雜芴基(selenofluorenyl)、基(xanthenyl)、phenanthrolyl、吩基(phenazilyl)、吩基()基等。 The aromatic heterocyclic group of the above (b) may, for example, be a carbon number of 1 to 30. Examples of the aromatic heterocyclic group having 1 to 30 carbon atoms include a 6π electron system, a 10π electron system, a 12π electron system, and a 14π electron system. The aromatic heterocyclic group may specifically be exemplified by a thienyl group, a furyl group, a pyrrolyl group, a thiazolyl group, an isothiazolyl group, a pyrazolyl group, Azolyl, different Azolyl, pyridyl, anthracene base, Diazolyl, imidazolyl, tri Base, thiadiazolyl, benzothiazolyl, benzimidazolyl, benzo Azolyl, benzo Diazolyl, benzotriazolyl, benzothiadiazolyl, benzoselenadiazolyl, thieno[2,3-b]thienyl, thieno[3,2-b]thienyl, thieno [3,4-b]thienyl, 9-oxoindolyl, oxazolyl, dibenzophenylthio, silafluorenyl, selenofluorenyl, Xanthenyl, phenanthrolyl, pheno Phenazilyl base( ) base.
(b)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。上述(b)之芳香族環式基具有取代基時,取代基數並未特別受限。上述(b)之芳香族環式基之取代基數為2以上時,該等取代基可全部相同亦可各自互異。 The substituent of the (b) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group, and a cyano group. When the aromatic cyclic group of the above (b) has a substituent, the number of substituents is not particularly limited. When the number of the substituents of the aromatic ring group in the above (b) is 2 or more, the substituents may be all the same or different from each other.
具有該等取代基之上述(b)之芳香族環式基可使分子結構中心骨架之二胺基聯苯基之平面性崩解。作為上述(b)之取代基的鏈狀或環狀烷基宜為碳數1~25者,且從避免立體障礙過大及玻璃轉移溫度降低之觀點來看,以碳數1~8者更佳。 The aromatic cyclic group of the above (b) having such a substituent can cause planar disintegration of the diaminobiphenyl group of the central skeleton of the molecular structure. The chain or cyclic alkyl group as the substituent of the above (b) is preferably a carbon number of 1 to 25, and is preferably one having a carbon number of 1 to 8 from the viewpoint of avoiding excessive steric hindrance and lowering of glass transition temperature. .
以Xa、Xb表示且作為(c)鹵基、胺基、硝基及氰基中任一者之鹵基可列舉如碘基、溴基、氯基、氟基。上述(c)之鹵基當中,從合成容易度、分子安定性及使中心骨 架之二胺基聯苯基之平面性崩解的觀點來看,尤宜為氟基。Xa與Xb可相同亦可相異。 The halogen group represented by Xa and Xb and which is any one of (c) a halogen group, an amine group, a nitro group and a cyano group may, for example, be an iodine group, a bromo group, a chloro group or a fluorine group. Among the above-mentioned (c) halogen groups, from the ease of synthesis, molecular stability and the center bone From the viewpoint of planar disintegration of the diaminobiphenyl group, it is particularly preferably a fluorine group. Xa and Xb may be the same or different.
Xa與Xb中任一者為氫時,另一者為氫以外之物。此時,可使分子結構中心骨架之二胺基聯苯基的平面性崩解。Xa與Xb中之任一者為氫時,另一者則是(a)可具有取代基之直鏈或環狀之烷基或烷氧基、(b)可具有取代基之芳香族環式基以及(c)鹵基、胺基、硝基、氰基中之任一者。 When either of Xa and Xb is hydrogen, the other is hydrogen. At this time, the planarity of the diaminobiphenyl group of the central skeleton of the molecular structure can be disintegrated. When either of Xa and Xb is hydrogen, the other is (a) a linear or cyclic alkyl or alkoxy group which may have a substituent, and (b) an aromatic ring which may have a substituent And (c) any one of a halogen group, an amine group, a nitro group, and a cyano group.
通式(1-1)中,Ya、Yb係令電洞輸送層材料使用通式(1-1)所示化合物之電洞輸送層的HOMO位準、LUMO位準及帶隙能量等之電特性為適切值者。 In the general formula (1-1), Ya and Yb are used for the hole transport layer material, and the HOMO level, LUMO level, and band gap energy of the hole transport layer of the compound represented by the formula (1-1) are used. The characteristics are those with appropriate values.
Ya、Yb各自獨立表示(d)可具有取代基之芳香族環式基。上述(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。上述(d)之芳香族環式基為芳香族烴基或芳香族雜環基。 Ya and Yb each independently represent (d) an aromatic cyclic group which may have a substituent. The substituent of the above (d) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group and a cyano group. The aromatic cyclic group of the above (d) is an aromatic hydrocarbon group or an aromatic heterocyclic group.
Ya與Yb可相同亦可相異。 Ya and Yb can be the same or different.
作為上述(d)之芳香族環式基的芳香族烴基從電洞輸送層之電特性、熱安定性及玻璃轉移溫度等物性上的特性以及立體障礙效果之觀點來看,以碳數6~30者為佳。此外,芳香族烴基可列舉6π電子系、10π電子系、12π電子系及14π電子系之物。芳香族烴基可具體的列舉如苯基、聯苯基、萘基、聯三苯基、蒽基、薁基、茀基、芘基、菲基、naphthryl等。就芳香族烴基而言,為了獲得可形成具適切電特性之電洞輸送層的電洞輸送層材料,尤以苯基、萘基及聯苯基為佳。上述(d)之芳香族環式基為苯基時,Ya與Yb 中可僅有任一者為苯基,亦可二者皆為苯基。從獲得可形成具有更適切電特性之電洞輸送層之電洞輸送材料的觀點來看,更宜兩者皆為苯基。 The aromatic hydrocarbon group as the aromatic ring group of the above (d) has a carbon number of 6 from the viewpoints of physical properties such as electrical characteristics, thermal stability and glass transition temperature of the hole transport layer, and steric hindrance effects. 30 is better. Further, examples of the aromatic hydrocarbon group include a 6π electron system, a 10π electron system, a 12π electron system, and a 14π electron system. Specific examples of the aromatic hydrocarbon group include a phenyl group, a biphenyl group, a naphthyl group, a terphenyl group, a fluorenyl group, a fluorenyl group, a fluorenyl group, a fluorenyl group, a phenanthryl group, a naphthryl group and the like. In the case of the aromatic hydrocarbon group, in order to obtain a material for the hole transport layer which can form a hole transport layer having appropriate electrical properties, a phenyl group, a naphthyl group and a biphenyl group are preferable. When the aromatic ring group of the above (d) is a phenyl group, Ya and Yb Only one of them may be a phenyl group, or both of them may be a phenyl group. From the viewpoint of obtaining a hole transporting material which can form a hole transporting layer having more suitable electrical characteristics, it is more preferable that both are phenyl groups.
作為上述(d)之芳香族環式基的芳香族烴基為聯苯基時,以該聯苯基中相當於苯基彼此之結合位的鄰位(ortho position)部分導入有甲基等烷基者為佳。此種聯苯基因立體障礙而成為聯苯骨架扭曲之物,π共軛系之擴張受到抑制。因此,可獲得可形成具有更適切電特性之電洞輸送層的電洞輸送層材料。相當於苯基彼此之結合位的鄰位部分導入有甲基等烷基之聯苯基尤以2,2’-二甲基-1,1’-聯苯基為佳。上述(d)之芳香族環式基為2,2’-二甲基-1,1’-聯苯基時,Ya與Yb中可僅有任一者為2,2’-二甲基-1,1’-聯苯基,亦可兩者皆為2,2’-二甲基-1,1’-聯苯基。從可抑制π共軛系之擴張,可獲得具有適切電特性之電洞輸送層的電洞輸送材料之觀點來看,更宜二者皆為2,2’-二甲基-1,1’-聯苯基。 When the aromatic hydrocarbon group of the aromatic cyclic group (d) is a biphenyl group, an alkyl group such as a methyl group is introduced in an ortho position corresponding to a bonding position between the phenyl groups in the biphenyl group. It is better. This biphenyl gene has a steric hindrance and becomes a distortion of the biphenyl skeleton, and the expansion of the π-conjugated system is suppressed. Therefore, a hole transport layer material which can form a hole transport layer having more suitable electrical characteristics can be obtained. Preferably, the biphenyl group having an alkyl group such as a methyl group introduced into the ortho position of the bonding position of the phenyl groups is preferably a 2,2'-dimethyl-1,1'-biphenyl group. When the aromatic ring group of the above (d) is 2,2'-dimethyl-1,1'-biphenyl, only one of Ya and Yb may be 2,2'-dimethyl- 1,1'-biphenyl, or both, 2,2'-dimethyl-1,1'-biphenyl. From the viewpoint of suppressing the expansion of the π-conjugated system and obtaining the hole transporting material of the hole transporting layer having suitable electrical properties, it is more preferable that both are 2,2'-dimethyl-1,1' -biphenyl.
從電洞輸送層之電特性、熱安定性及玻璃轉移溫度等物性上之特性及立體障礙效果之觀點來看,作為上述(d)之芳香族環式基的芳香族雜環基宜為碳數1~30者。此外,芳香族雜環基可列舉6π電子系、10π電子系、12π電子系及14π電子系之物。芳香族雜環基可具體列舉如噻吩基、呋喃基、吡咯基、噻唑基、異噻唑基、吡唑基、唑基、異唑基、吡啶基、嗒基、二唑基、咪唑基、三基、噻二唑基、苯并噻唑基、苯并咪唑基、苯并唑基、苯并 二唑基、苯并三唑基、苯并噻二唑基、苯并硒二唑基、噻吩并[2,3-b]噻吩基、噻吩并[3,2-b]噻吩基、噻吩并[3,4-b]噻吩基、9-側氧茀基、咔唑基、二苯并苯硫基、矽雜芴基、硒雜芴基、基、phenanthrolyl、吩基(phenazilyl)、吩 基()等。就芳香族雜環基而言,為了獲得可形成具有適切電特性之電洞輸送層的電洞輸送層材料,尤以二苯并苯硫基為佳。 The aromatic heterocyclic group as the aromatic cyclic group of the above (d) is preferably carbon from the viewpoints of physical properties such as electrical properties, thermal stability, and glass transition temperature of the hole transport layer and steric hindrance effects. Number 1~30. Further, examples of the aromatic heterocyclic group include a 6π electron system, a 10π electron system, a 12π electron system, and a 14π electron system. The aromatic heterocyclic group may specifically be exemplified by a thienyl group, a furyl group, a pyrrolyl group, a thiazolyl group, an isothiazolyl group, a pyrazolyl group, Azolyl, different Azolyl, pyridyl, anthracene base, Diazolyl, imidazolyl, tri Base, thiadiazolyl, benzothiazolyl, benzimidazolyl, benzo Azolyl, benzo Diazolyl, benzotriazolyl, benzothiadiazolyl, benzoselenadiazolyl, thieno[2,3-b]thienyl, thieno[3,2-b]thienyl, thieno [3,4-b]thienyl, 9-side oxonyl, oxazolyl, dibenzophenylthio, anthracenyl, selenium fluorenyl, Base, phenanthrolyl, pheno Phenazilyl base( )Wait. In the case of an aromatic heterocyclic group, in order to obtain a material for a hole transport layer which can form a hole transport layer having suitable electrical properties, a dibenzophenylthio group is particularly preferred.
(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。上述(d)之芳香族環式基具有取代基時,取代基數並未特別受限。上述(d)之芳香族環式基之取代基數為2以上時,該等取代基可全部相同,亦可各自互異。 The substituent of the (d) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group, and a cyano group. When the aromatic cyclic group of the above (d) has a substituent, the number of substituents is not particularly limited. When the number of the substituents of the aromatic ring group in the above (d) is 2 or more, the substituents may be all the same or may be different from each other.
作為上述(d)之取代基的鏈狀或環狀烷基從適切之立體障礙效果之觀點來看,以甲基、乙基、丙基、異丙基為宜。 The chain or cyclic alkyl group as the substituent of the above (d) is preferably a methyl group, an ethyl group, a propyl group or an isopropyl group from the viewpoint of a suitable steric barrier effect.
作為上述(d)之取代基的鹵基從合成容易度之觀點來看以氟基為宜。 The halogen group as the substituent of the above (d) is preferably a fluorine group from the viewpoint of easiness of synthesis.
另,於通式(1-1)中,若Xa、Xb、Ya、Yb所示任一1個以上之取代基的碳數過多,有時會發生下述不良情況。亦即,容易發生因Xa、Xb、Ya、Yb中任一1個以上之取代基過大而導致的立體障礙。此外,玻璃轉移溫度降低,熱安定性容易變得不足。又,將通式(1-1)所示化合物用作有機EL元件之電洞輸送層材料時,成為核心(core)部分之電荷輸送點(site)相對減少,電特性變得容易降低。因此,通式(1-1)中Xa、Xb、Ya、Yb所示取代基均宜為碳數30以下者。 In the general formula (1-1), when one or more substituents represented by Xa, Xb, Ya, and Yb have too many carbon atoms, the following problems may occur. In other words, steric hindrance due to excessive substitution of one or more of Xa, Xb, Ya, and Yb is likely to occur. Further, the glass transition temperature is lowered, and the heat stability is likely to become insufficient. Further, when the compound represented by the formula (1-1) is used as a material for a hole transport layer of an organic EL device, a charge transfer site which becomes a core portion is relatively reduced, and electrical characteristics are easily lowered. Therefore, the substituent represented by Xa, Xb, Ya, and Yb in the formula (1-1) is preferably a carbon number of 30 or less.
本發明之化合物含有配置在2個二苯并噻吩與2個二苯并噻吩之間的二胺基聯苯基時,具體例可列舉如下述通式(1-6)~(1-10)所示化合物。 When the compound of the present invention contains a diaminobiphenyl group disposed between two dibenzothiophenes and two dibenzothiophenes, specific examples thereof include the following general formulae (1-6) to (1-10). The compound shown.
此外,下述通式(1-6)~(1-10)中,Xa、Xb各自獨立表示:氫、(a)可具有取代基之直鏈或環狀烷基或烷氧基、(b)可具有取代基之芳香族環式基、(c)鹵基、胺基、硝基及氰基中之任一者。Xa與Xb中任一者為氫時,另一者為氫以外之物。(a)可具有取代基之直鏈或環狀烷基或烷氧基的取代基為烷基、鹵基、胺基、硝基及氰基中之任一者。(b)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。(b)之芳香族環式基為芳香族烴基或芳香族雜環基。 Further, in the following general formulae (1-6) to (1-10), Xa and Xb each independently represent: hydrogen, (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent, (b) Any of an aromatic cyclic group which may have a substituent, (c) a halogen group, an amine group, a nitro group, and a cyano group. When either of Xa and Xb is hydrogen, the other is hydrogen. The substituent of (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent is any of an alkyl group, a halogen group, an amine group, a nitro group and a cyano group. The substituent of the (b) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group, and a cyano group. The aromatic ring group of (b) is an aromatic hydrocarbon group or an aromatic heterocyclic group.
下述通式(1-6)~(1-10)中,Ya、Yb各自獨立表示(d)可具有取代基之芳香族環式基。上述(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。上述(d)之芳香族環式基為芳香族烴基或芳香族雜環基。 In the following general formulae (1-6) to (1-10), each of Ya and Yb independently represents (d) an aromatic cyclic group which may have a substituent. The substituent of the above (d) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group and a cyano group. The aromatic cyclic group of the above (d) is an aromatic hydrocarbon group or an aromatic heterocyclic group.
【化6】
此外,上述通式(1-6)~(1-10)所示化合物為本發明化合物之一例,本發明之技術範圍不受此等化合物所侷限。 Further, the compound represented by the above formula (1-6) to (1-10) is an example of the compound of the present invention, and the technical scope of the present invention is not limited by these compounds.
通式(1-1)所示化合物包含配置在2個二苯并噻吩與2個二苯并噻吩之間的二胺基聯苯基時,鍵結二胺基聯苯基之胺基的鍵結位並未特別受限。舉例來說:可為5,5’位,如通式(1-6)所示化合物等般;可為4,5’位,如通式(1-7)所示化合物般;可為3,3’位,如通式(1-8)所示化合物般;可為4,3’位,如通式(1-9)所示化合物等般;可為5,3’位,如通式(1-10)所示化合物般;也可為4,4’位,如通式(1-2)所示化合物等般。 The compound represented by the formula (1-1) contains a bond of an amine group bonded to a diaminobiphenyl group when a diaminobiphenyl group is disposed between two dibenzothiophenes and two dibenzothiophenes. The knot is not particularly limited. For example, it may be in the 5,5' position, as shown in the formula (1-6); it may be in the 4, 5' position, as in the compound of the formula (1-7); it may be 3 , 3' position, like the compound of the formula (1-8); can be 4, 3' position, such as the compound of the formula (1-9); can be 5, 3' position, such as It is the same as the compound represented by the formula (1-10); it may be in the 4,4' position, and the compound represented by the formula (1-2).
從合成容易度之觀點來看,鍵結到二胺基聯苯基之胺基的鍵結位宜為5,5’位或4,4’位。 From the standpoint of ease of synthesis, the bonding position of the amine group bonded to the diaminobiphenyl group is preferably 5, 5' or 4, 4'.
通式(1-1)所示化合物含有配置在2個二苯并噻吩與2個二苯并噻吩之間的二胺基聯苯基時,2個二苯并噻吩 之取代位置可為1~4位中之任一者,且可各自相異。2個二苯并噻吩之取代位置從化合物之合成容易度的觀點來看,宜為2位或4位。 When the compound of the formula (1-1) contains a diaminobiphenyl group disposed between two dibenzothiophenes and two dibenzothiophenes, two dibenzothiophenes The substitution position may be any one of 1 to 4 positions, and may be different from each other. The substitution position of the two dibenzothiophenes is preferably 2 or 4 from the viewpoint of the ease of synthesis of the compound.
本發明之化合物含有配置在2個二苯并呋喃與2個二苯并呋喃之間的二胺基聯苯基時,具體例可列舉如下述通式(2-6)~(2-10)所示化合物。 When the compound of the present invention contains a diaminobiphenyl group disposed between two dibenzofurans and two dibenzofurans, specific examples thereof include the following formulas (2-6) to (2-10). The compound shown.
此外,下述通式(2-6)~(2-10)中,Xa、Xb各自獨立表示氫、(a)可具有取代基之直鏈或環狀烷基或烷氧基、(b)可具有取代基之芳香族環式基、(c)鹵基、胺基、硝基及氰基中之任一者。Xa與Xb中任一者為氫時,另一者為氫以外之物。(a)可具有取代基之直鏈或環狀烷基或烷氧基的取代基為烷基、鹵基、胺基、硝基及氰基中之任一者。(b)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。(b)之芳香族環式基為芳香族烴基或芳香族雜環基。 Further, in the following general formulae (2-6) to (2-10), Xa and Xb each independently represent hydrogen, (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent, and (b) Any of an aromatic cyclic group having a substituent, (c) a halogen group, an amine group, a nitro group, and a cyano group. When either of Xa and Xb is hydrogen, the other is hydrogen. The substituent of (a) a linear or cyclic alkyl group or alkoxy group which may have a substituent is any of an alkyl group, a halogen group, an amine group, a nitro group and a cyano group. The substituent of the (b) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group, and a cyano group. The aromatic ring group of (b) is an aromatic hydrocarbon group or an aromatic heterocyclic group.
下述通式(2-6)~(2-10)中,Ya、Yb各自獨立表示(d)可具有取代基之芳香族環式基。上述(d)可具有取代基之芳香族環式基的取代基為鏈狀或環狀之烷基、鹵基、胺基、硝基及氰基中之任一者。上述(d)之芳香族環式基為芳香族烴基或芳香族雜環基。 In the following general formulae (2-6) to (2-10), each of Ya and Yb independently represents (d) an aromatic cyclic group which may have a substituent. The substituent of the above (d) aromatic cyclic group which may have a substituent is a chain or a cyclic alkyl group, a halogen group, an amine group, a nitro group and a cyano group. The aromatic cyclic group of the above (d) is an aromatic hydrocarbon group or an aromatic heterocyclic group.
此外,上述通式(2-6)~(2-10)所示化合物為本發明化合物之一例,本發明之技術範圍不受此等化合物所侷限。 Further, the compound represented by the above formula (2-6) to (2-10) is an example of the compound of the present invention, and the technical scope of the present invention is not limited by these compounds.
通式(1-1)所示化合物含有配置在2個二苯并呋喃與2個二苯并呋喃之間的二胺基聯苯基時,與代替2個二苯并呋喃而具有2個二苯并噻吩的情況相同,鍵結二胺基聯苯基之胺基的鍵結位並未特別受限。舉例來說:可為5,5’位,如通式(2-6)所示化合物等般;可為4,5’位,如通式(2-7)所示化合物般;可為3,3’位,如通式(2-8)所示化合物般;可為4,3’位,如通式(2-9)所示化合物般;可為5,3’位,如通式(2-10)所示化合物般;亦可為4,4’位,如通式(1-2)所示化合物等般。 The compound of the formula (1-1) contains a diaminobiphenyl group disposed between two dibenzofurans and two dibenzofurans, and has two two instead of two dibenzofurans. In the case of benzothiophene, the bonding position of the amine group bonded to the diaminobiphenyl group is not particularly limited. For example, it may be in the 5,5' position, such as the compound represented by the formula (2-6); it may be in the 4, 5' position, as in the compound represented by the formula (2-7); , 3' position, like the compound of the formula (2-8); can be 4, 3' position, like the compound of the formula (2-9); can be 5, 3' position, such as (2-10) The compound is the same as the compound shown in the formula (1-2).
鍵結二胺基聯苯基之胺基的鍵結位從合成容易度之觀點來看,宜為5,5’位或4,4’位。 The bonding position of the amine group bonded to the diaminobiphenyl group is preferably 5, 5' or 4, 4' from the viewpoint of ease of synthesis.
通式(1-1)所示化合物含有配置在2個二苯并呋喃與2個二苯并呋喃之間的二胺基聯苯基時,2個二苯并呋喃之取代位置可為1~4位中之任一者,且可各自互異。2個二苯并呋喃之取代位置從化合物之合成容易度的觀點來看,宜為2位或4位。 When the compound of the formula (1-1) contains a diaminobiphenyl group disposed between two dibenzofurans and two dibenzofurans, the substitution position of the two dibenzofurans may be 1~ Any of the four, and each can be different. The substitution position of the two dibenzofurans is preferably 2 or 4 from the viewpoint of the ease of synthesis of the compound.
(有機EL元件) (Organic EL device)
本發明之有機EL元件係於陰極與陽極之間設有發光層及配置在前述發光層之前述陽極側的電洞輸送層者。本發明之有機EL元件之電洞輸送層含有本發明之化合物。 The organic EL device of the present invention is characterized in that a light-emitting layer and a hole transport layer disposed on the anode side of the light-emitting layer are provided between the cathode and the anode. The hole transport layer of the organic EL device of the present invention contains the compound of the present invention.
圖1為概略截面圖,用以說明本發明之有機EL元件之一例。圖1所示有機EL元件1具有積層結構,該積層結構係於基板2上依序形成有第1電極9(陽極)、電洞注入層8、電洞輸送層7、發光層6、電子輸送層5、電子注入層4、第2電極3(陰極)。 Fig. 1 is a schematic cross-sectional view for explaining an example of an organic EL device of the present invention. The organic EL element 1 shown in FIG. 1 has a laminated structure in which a first electrode 9 (anode), a hole injection layer 8, a hole transport layer 7, a light-emitting layer 6, and electron transport are sequentially formed on a substrate 2. Layer 5, electron injection layer 4, and second electrode 3 (cathode).
圖1所示有機EL元件1中,形成在基板2上且構成有機EL元件之積層結構全部都是由有機化合物所構成者。 In the organic EL element 1 shown in Fig. 1, all of the laminated structures constituting the organic EL element formed on the substrate 2 are composed of an organic compound.
此外,圖1所示有機EL元件1亦可為HOILED元件,即於形成在基板2上且構成有機EL元件1之積層結構中包含無機化合物所構成之層。此時,舉例來說,可將該元件設成:在圖1所示有機EL元件1中設有無機氧化物構成之電子注入層4及無機氧化物構成之電洞注入層8來作為無機化合物所構成之層者。無機化合物較有機化合物安定。因此,相較於不含無機化合物所構成之層的有機EL元件,HOILED元件對於氧及水的耐性較高而甚理想。 In addition, the organic EL element 1 shown in FIG. 1 may be a HOILED element, that is, a layer composed of an inorganic compound formed on the substrate 2 and constituting the organic EL element 1. In this case, for example, the organic EL element 1 shown in FIG. 1 is provided with an electron injecting layer 4 composed of an inorganic oxide and a hole injecting layer 8 composed of an inorganic oxide as an inorganic compound. The layer formed. Inorganic compounds are more stable than organic compounds. Therefore, the HOILED element is preferable in that it is resistant to oxygen and water as compared with the organic EL element which does not contain the layer which consists of an inorganic compound.
此外,雖以圖1所示有機EL元件1中設有電子注入層4與電洞注入層8之情況為例予以說明,但舉例來說,亦可不具電子注入層4及/或電洞注入層8。此外,圖1所示有機EL元件1中,可設置由無機化合物構成之電子注入層來取代由有機化合物構成之電子注入層4,也可設置由無機化合物構成之電洞注入層來取代由有機化合物構成之電洞注入層8。 In addition, although the case where the electron injection layer 4 and the hole injection layer 8 are provided in the organic EL element 1 shown in FIG. 1 will be described as an example, for example, the electron injection layer 4 and/or the hole injection may not be provided. Layer 8. Further, in the organic EL element 1 shown in Fig. 1, an electron injecting layer composed of an inorganic compound may be provided instead of the electron injecting layer 4 composed of an organic compound, or a hole injecting layer composed of an inorganic compound may be provided instead of being organic. A hole injection layer 8 composed of a compound.
圖1所示有機EL元件1可為頂部發光型(在與基板2側相反之側取光),亦可為底部發光型(在基板2之側取光)。 The organic EL element 1 shown in Fig. 1 may be of a top emission type (light extraction on the side opposite to the substrate 2 side) or a bottom emission type (light extraction on the side of the substrate 2).
此外,圖1所示有機EL元件1係一在基板2與發光層6之間配置有作為陽極發揮機能之第1電極9的順向結構之物。 In addition, the organic EL element 1 shown in FIG. 1 is a structure in which a forward structure of the first electrode 9 functioning as an anode is disposed between the substrate 2 and the light-emitting layer 6.
「基板」 "substrate"
基板2之材料可列舉如聚對酞酸乙二酯、聚萘二甲酸乙二酯(polyethylene naphthalat)、聚丙烯、環烯烴聚合物、聚醯胺、聚醚碸、聚甲基丙烯酸甲酯、聚碳酸酯、聚芳酯等般之樹脂材料以及石英玻璃、鈉玻璃(soda glass)般之玻璃材料等,且可使用其等中之1種或2種以上。 The material of the substrate 2 may, for example, be polyethylene terephthalate, polyethylene naphthalat, polypropylene, cycloolefin polymer, polyamine, polyether oxime, polymethyl methacrylate, A resin material such as a polycarbonate or a polyarylate, a glass material such as quartz glass or a soda glass, or the like, and one or more of them may be used.
有機EL元件1使用底部發光型之物時,基板2之材料使用透明之物。 When the organic EL element 1 uses a bottom emission type, the material of the substrate 2 uses a transparent material.
有機EL元件1為頂部發光型之物時,基板2之材料不僅是透明之物,亦可使用不透明之物。不透明基板可舉例如:以諸如氧化鋁般之陶瓷材料來構成的基板、於諸如不鏽鋼般之金屬基板表面形成有氧化膜(絕緣膜)之物、以及以樹脂材料來構成之基板等。 When the organic EL element 1 is a top emission type, the material of the substrate 2 is not only a transparent material but also an opaque material. The opaque substrate may, for example, be a substrate made of a ceramic material such as alumina, an oxide film (insulating film) formed on the surface of a metal substrate such as stainless steel, or a substrate made of a resin material.
基板2之平均厚度宜為0.1~30mm,更宜為0.1~10mm。基板2之平均厚度可藉數位萬用表(Digital MultiMeter)及游標來測定。 The average thickness of the substrate 2 is preferably 0.1 to 30 mm, more preferably 0.1 to 10 mm. The average thickness of the substrate 2 can be measured by a digital multimeter and a cursor.
「第1電極(陽極)」 "First electrode (anode)"
圖1所示有機EL元件1中之第1電極9係作為陽極而發揮基能。第1電極9之材料可列舉如ITO(氧化銦錫)、IZO(氧化銦鋅)、FTO(氧化氟錫)、In3O3、SnO2、含Sb之SnO2、含Al之ZnO等之氧化物等。其中,就第1電極9之材料而言,尤宜使用ITO、IZO、FTO。 The first electrode 9 in the organic EL element 1 shown in Fig. 1 functions as an anode and exhibits a fundamental energy. Examples of the material of the first electrode 9 include ITO (indium tin oxide), IZO (indium zinc oxide), FTO (fluorinated tin oxide), In 3 O 3 , SnO 2 , Sb-containing SnO 2 , Al-containing ZnO, and the like. Oxide, etc. Among them, as the material of the first electrode 9, ITO, IZO, and FTO are particularly preferably used.
第1電極9之平均厚度雖未特別受限,但宜為10~500nm,更宜為100~200nm。 The average thickness of the first electrode 9 is not particularly limited, but is preferably 10 to 500 nm, more preferably 100 to 200 nm.
第1電極9之平均厚度可藉探針式膜厚計、分光橢率測量儀來測定。 The average thickness of the first electrode 9 can be measured by a probe type film thickness meter or a spectroscopic ellipsometer.
「電洞注入層」 "hole injection layer"
本實施形態中之電洞注入層8可使用一般可用作電洞注入層8之材料的任一化合物,且可將其等混合使用。具體來說,電洞注入層8之材料可列舉如下述通式(131)所示PEDOT:PSS、酞青素(H2Pc)及銅酞青素般之金屬或非金屬酞青素系化合物等,且可使用該等中之1種或2種以上。 The hole injection layer 8 in the present embodiment can be any compound which can be generally used as a material of the hole injection layer 8, and can be used in combination. Specifically, examples of the material of the hole injection layer 8 include PEDOT:PSS, anthocyanin (H 2 Pc), and a metallocene-like metal or non-metal anthraquinone compound represented by the following formula (131). One or two or more of these may be used.
此外,電洞注入層8由無機化合物構成時,宜為金屬氧化物層等之由無機氧化物所構成之層。金屬氧化物層並未特別受限,例如可使用氧化釩(V2O5)、氧化鉬(MoO3)及氧化釕(RuO2)等中之1種或2種以上。於該等之中,電洞注入層8尤其是以氧化釩或氧化鉬為主成分者為佳。 Further, when the hole injection layer 8 is made of an inorganic compound, it is preferably a layer made of an inorganic oxide such as a metal oxide layer. The metal oxide layer is not particularly limited, and for example, one or more of vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 3 ), and ruthenium oxide (RuO 2 ) may be used. Among these, the hole injection layer 8 is preferably a component mainly composed of vanadium oxide or molybdenum oxide.
電洞注入層8以氧化釩及/或氧化鉬為主成分時,從第1電極9(陽極)注入電洞並輸送到發光層6或電洞輸送層7之電洞注入層8的機能會變得更優良。此外,氧化釩及氧化鉬由於本身之電洞輸送性高,而適於防止由第1電極9朝發光層6或電洞輸送層7之電洞注入效率降低。 When the hole injection layer 8 is mainly composed of vanadium oxide and/or molybdenum oxide, the function of injecting holes from the first electrode 9 (anode) and transporting it to the hole injection layer 8 of the light-emitting layer 6 or the hole transport layer 7 will be Become better. Further, vanadium oxide and molybdenum oxide are suitable for preventing a decrease in hole injection efficiency of the first electrode 9 toward the light-emitting layer 6 or the hole transport layer 7 due to high hole transportability.
電洞注入層8之平均厚度雖未特別受限,但宜為1~1000nm,更宜為5~50nm。 The average thickness of the hole injection layer 8 is not particularly limited, but is preferably 1 to 1000 nm, more preferably 5 to 50 nm.
電洞注入層8之平均厚度可在成膜時利用水晶振動子膜厚計來測定。 The average thickness of the hole injection layer 8 can be measured by a crystal vibrating film thickness gauge at the time of film formation.
「電洞輸送層」 "hole transport layer"
電洞輸送層7係緊接發光層6配置。 The hole transport layer 7 is disposed next to the light-emitting layer 6.
電洞輸送層7使用由上述通式(1-1)所示化合物構成之 電洞輸送性材料。因此,電洞輸送層7會成為帶隙能量大且電性/熱安定性優異之物。結果,圖1所示有機EL元件1會具長壽命且具有高發光效率。 The hole transport layer 7 is composed of a compound represented by the above formula (1-1). Hole transport material. Therefore, the hole transport layer 7 is excellent in band gap energy and excellent in electrical/thermal stability. As a result, the organic EL element 1 shown in Fig. 1 has a long life and high luminous efficiency.
特別是在圖1所示有機EL元件1之發光層6含有由電子輸送性材料或二電荷輸送性材料構成之主體材料、集由磷光材料構成之客體材料時,將會成為電洞輸送性及電子阻擋性優異且激發三重態(T1)之能量高、HOMO位準、LUMO位準及帶隙能量等之電特性呈適切值之電洞輸送層7,可實現高發光效率之有機EL元件1,甚是理想。 In particular, when the light-emitting layer 6 of the organic EL element 1 shown in FIG. 1 contains a host material composed of an electron transporting material or a two-charge transporting material and a guest material composed of a phosphorescent material, it will become a hole transporting property and A hole transport layer 7 having an excellent electron blocking property and an excitation energy of a triplet state (T 1 ), a HOMO level, a LUMO level, and a band gap energy, and an appropriate value, can realize an organic EL element having high luminous efficiency. 1, very ideal.
更詳言之,圖1所示有機EL元件1中,發光層6之主體材料使用後述之電子輸送性材料或電洞與電子之二電荷輸送性材料。因此,發光層6之電荷再結合區域緊接電洞輸送層/發光層界面。 More specifically, in the organic EL element 1 shown in Fig. 1, the host material of the light-emitting layer 6 uses an electron transporting material or a hole-electron transporting material which is described later. Therefore, the charge recombination region of the light-emitting layer 6 is immediately adjacent to the hole transport layer/light-emitting layer interface.
圖1所示有機EL元件1因電洞輸送層7之帶隙能量大且LUMO位準適切,而可獲得高度之電子阻擋性。因此,可防止供至發光層6之過剩電子未與電洞再結合而從發光層6漏出到電洞輸送層7。因此,以圖1所示之有機EL元件1而言,可抑制因電子從發光層6漏出到電洞輸送層7所引起之發光效率降低,再結合效率提升而獲得高發光效率。 The organic EL element 1 shown in Fig. 1 can obtain a high degree of electron blocking property because the band gap energy of the hole transport layer 7 is large and the LUMO level is appropriate. Therefore, excess electrons supplied to the light-emitting layer 6 can be prevented from leaking from the light-emitting layer 6 to the hole transport layer 7 without being recombined with the holes. Therefore, in the organic EL element 1 shown in FIG. 1, it is possible to suppress a decrease in luminous efficiency due to leakage of electrons from the light-emitting layer 6 to the hole transport layer 7, and to improve the efficiency of the combination and obtain high luminous efficiency.
此外,電洞輸送層7之帶隙能量宜在發光層6之主體材料之帶隙能量以上。HOMO位準適切之電洞輸送層7的帶隙能量在發光層6之主體材料的帶隙能量以上時,電洞輸送層7之電子阻擋性會變得更高,可更有效防止供至發光層6之過剩電子從發光層6漏出到電洞輸送層7,使再結合效率 更加提升而獲得高發光效率。 Further, the band gap energy of the hole transport layer 7 is preferably higher than the band gap energy of the host material of the light-emitting layer 6. When the band gap energy of the HOMO level-appropriate hole transport layer 7 is higher than the band gap energy of the host material of the light-emitting layer 6, the electron blocking property of the hole transport layer 7 becomes higher, and the supply to the light can be more effectively prevented. Excess electrons of layer 6 leak from the light-emitting layer 6 to the hole transport layer 7, so that the recombination efficiency Increased and achieved high luminous efficiency.
此外,圖1所示有機EL元件1之電洞輸送層7的激發三重態(T1)能量甚高。因此,圖1所示有機EL元件1可防止激發三重態(T1)之能量從發光層6移動到電洞輸送層7,而可獲得將激發三重態(T1)之能量封入發光層6內之效果。因此,後述之發光材料為磷光材料時,可有效率地將主體材料之激發狀態能量取出而作為磷光發光。 Further, the hole transporting layer 7 of the organic EL element 1 shown in Fig. 1 has a very high excitation triplet state (T 1 ). Therefore, the organic EL element 1 shown in FIG. 1 can prevent the energy of the excited triplet state (T 1 ) from moving from the light-emitting layer 6 to the hole transport layer 7, and the energy of exciting the triplet state (T 1 ) can be enclosed in the light-emitting layer 6 . The effect inside. Therefore, when the luminescent material described later is a phosphorescent material, the excited state energy of the host material can be efficiently taken out as phosphorescence.
電洞輸送層7之平均厚度雖未特別受限,但宜為10~150nm,更宜為20~100nm。 The average thickness of the hole transport layer 7 is not particularly limited, but is preferably 10 to 150 nm, more preferably 20 to 100 nm.
舉例來說,電洞輸送層7之平均厚度可藉探針式膜厚計及分光橢率測量儀來測定。 For example, the average thickness of the hole transport layer 7 can be measured by a probe type film thickness meter and a spectroscopic ellipsometer.
電洞輸送層7可如圖1所示般僅由1層構成,亦可是在上述緊接發光層6配置之電洞輸送層7的電洞注入層8側具有1層以上之第2電洞輸送層(未圖示)者。 The hole transport layer 7 may be composed of only one layer as shown in FIG. 1, or may have one or more second holes on the side of the hole injection layer 8 of the hole transport layer 7 disposed next to the light-emitting layer 6. Transport layer (not shown).
用於第2電洞輸送層之電洞輸送性有機材料可使用各種p型之高分子材料(有機聚合物),或者單獨或組合使用各種p型低分子材料。 As the hole transporting organic material for the second hole transport layer, various p-type polymer materials (organic polymers) can be used, or various p-type low molecular materials can be used singly or in combination.
具體來說,第2電洞輸送層之材料可舉例如N,N’-二(1-萘基)-N,N’-二苯基-1,1’-聯苯-4,4’-二胺(α-NPD)、聚芳基胺、茀-芳基胺共聚物、茀-二噻吩共聚物、聚(N-乙烯基咔唑)、聚乙烯芘、聚乙烯蒽、聚噻吩、聚烷基噻吩、聚己基噻吩、聚(對伸苯基伸乙烯基)、聚亞乙炔基亞乙烯基( )、芘甲醛樹脂、乙基咔唑甲醛樹脂或其衍生物等。該等第2電洞輸送層之材料也可作為與其他化 合物之混合物來使用,作為其中一例,含有聚噻吩之混合物可列舉如通式(131)所示聚(3,4-伸乙基二氧基噻吩/苯乙烯磺酸)(PEDOT:PSS)等。 Specifically, the material of the second hole transport layer may be, for example, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- Diamine (α-NPD), polyarylamine, fluorene-arylamine copolymer, fluorene-dithiophene copolymer, poly(N-vinylcarbazole), polyethylene fluorene, polyethylene fluorene, polythiophene, poly Alkylthiophene, polyhexylthiophene, poly(p-phenylene vinylene), poly(ethynylene vinylene) ), hydrazine formaldehyde resin, ethyl carbazole formaldehyde resin or its derivatives. The material of the second hole transport layer can also be used as a mixture with other compounds. As an example, a mixture containing polythiophene can be exemplified by poly(3,4-extended ethyl group) represented by the formula (131). Oxythiophene/styrenesulfonic acid) (PEDOT: PSS) and the like.
第2電洞輸送層之平均厚度雖未特別受限,但宜為10~150nm,更宜為20~100nm。 The average thickness of the second hole transport layer is not particularly limited, but is preferably 10 to 150 nm, more preferably 20 to 100 nm.
舉例來說,第2電洞輸送層之平均厚度可藉探針式膜厚計及分光橢率測量儀來測定。 For example, the average thickness of the second hole transport layer can be measured by a probe type film thickness meter and a spectroscopic ellipsometer.
「發光層」 "Lighting layer"
發光層6係由擔負電荷輸送/再結合工作之主體材料與由發光材料構成之客體材料所構成。 The light-emitting layer 6 is composed of a host material that is subjected to charge transport/recombination work and a guest material composed of a light-emitting material.
主體材料使用電子輸送性材料或電洞與電子之二電荷輸送性材料。具體來說,電子輸送性之主體材料可列舉如下述通式(132)所示Bepp2、下述通式(133)~(137)所示化合物等,且尤以金屬錯合物之下述通式(132)所示Bepp2為佳。 The host material uses an electron transporting material or a second charge transporting material of a hole and an electron. Specifically, examples of the electron transporting host material include Bepp 2 represented by the following formula (132), a compound represented by the following formula (133) to (137), and the like. Bepp2 shown in formula (132) is preferred.
藉由主體材料使用Bepp2等之金屬錯合物,從主體材料至客體材料之能量移動可有效率地發生,可獲得具有高發光效率之有機EL元件1。 By using a metal complex of Bepp2 or the like as the host material, energy transfer from the host material to the guest material can be efficiently performed, and the organic EL element 1 having high luminous efficiency can be obtained.
此外,電洞與電子之二電荷輸送性主體材料可列舉如下述通式(139)~(160)所示化合物等。 Further, examples of the charge-transporting host material of the hole and the electron include compounds represented by the following formulas (139) to (160).
客體材料宜使用磷光材料。 Phosphorescent materials should be used for the guest material.
磷光材料可列舉如下述通式(161)~(189)所示綠色~紅色磷光材料等。藉由將磷光材料作為客體材料使用,將會成為利用磷光發光之有機EL元件。結果,與客體材料使用 螢光材料之有機EL元件相較,可使發光效率提升,甚是理想。 Examples of the phosphorescent material include green to red phosphorescent materials represented by the following general formulae (161) to (189). By using a phosphorescent material as a guest material, it will become an organic EL device that utilizes phosphorescence. Result, use with guest materials Compared with the organic EL element of the fluorescent material, the luminous efficiency is improved, which is ideal.
發光層6中之客體材料含量宜為1重量%以上且 小於15重量%。藉由令發光層6中之客體材料含量為上述範 圍,可獲得更優異之發光效率。發光層6中之客體材料含量小於上述範圍時,從主體材料至客體材料之能量移動無法充分發生,而有主體材料本身發光及發光效率降低之虞。又,發光層6中之客體材料含量超過上述範圍時,主體材料之電子輸送性變得不足,因客體材料運送電荷而使發光區域遠離發光層6之電洞輸送層7側界面,發光效率有降低之虞。 The guest material content in the light-emitting layer 6 is preferably 1% by weight or more and Less than 15% by weight. By making the content of the guest material in the light-emitting layer 6 the above-mentioned range In addition, more excellent luminous efficiency can be obtained. When the content of the guest material in the light-emitting layer 6 is less than the above range, the energy movement from the host material to the guest material cannot sufficiently occur, and the host material itself emits light and the luminous efficiency is lowered. Further, when the content of the guest material in the light-emitting layer 6 exceeds the above range, the electron transport property of the host material becomes insufficient, and the light-emitting region is moved away from the interface of the hole transport layer 7 of the light-emitting layer 6 by the charge of the guest material, and the light-emitting efficiency is improved. Reduce the embarrassment.
發光層6之平均厚度未特別受限,但宜為10~150nm,更宜為20~100nm The average thickness of the light-emitting layer 6 is not particularly limited, but is preferably 10 to 150 nm, more preferably 20 to 100 nm.
發光層6之平均厚度可利用探針式膜厚計來測定,亦可在發光層6成膜時以水晶振動子膜厚計來測定。 The average thickness of the light-emitting layer 6 can be measured by a probe type film thickness meter, or can be measured by a crystal vibrating film thickness when the light-emitting layer 6 is formed.
「電子輸送層」 "Electronic transport layer"
用於電子輸送層5之材料可列舉如苯基-二芘基膦氧化物(Phenyl-dipyrenylphosphine oxide,POPy2)般之膦氧化物衍生物、諸如參-1,3,5-(3’-(吡啶-3”-基)苯基)苯(TmPyPhB)般之吡啶衍生物、諸如(2-(3-(9-咔唑基)苯基)喹啉(mCQ))般之喹啉衍生物、諸如2-苯基-4,6-雙(3,5-二吡啶基苯基)嘧啶(BPyPPM)般之嘧啶衍生物、吡衍生物、諸如紅菲繞啉(bathophenanthroline,BPhen)般之啡啉衍生物、諸如2,4-雙(4-聯苯)-6-(4’-(2-吡啶基)-4-聯苯)-[1,3,5]三(MPT)般之三衍生物、諸如3-苯基-4-(1’-萘基)-5-苯基-1,2,4-三唑(TAZ)般之三唑衍生物、唑衍生物、諸如2-(4-聯苯基)-5-(4-第三丁基苯基-1,3,4-二唑)(PBD)般之二唑衍生物、諸如2,2’,2”-(1,3,5-伸苯基)-參(1-苯基-1-H-苯并咪 唑)(TPBI)般之咪唑衍生物、萘、苝等之芳香環四羧酸酐、雙[2-(2-羥基苯基)苯并噻唑螯合]鋅(Zn(BTZ)2)、以參(8-羥基喹啉)鋁(Alq3)等為代表之各種金屬錯合物、以2,5-雙(6’-(2’,2”-二吡啶基))-1,1-二甲基-3,4-二苯基矽唑(PyPySPyPy)等之矽唑衍生物為代表的有機矽烷衍生物等,且可使用此等中之1種或2種以上。此等電子輸送層之材料當中,尤以使用諸如POPy2般之膦氧化物衍生物、Alq3般之金屬錯合物及TmPyPhB般之吡啶衍生物為佳。 The material for the electron transport layer 5 may, for example, be a phosphine oxide derivative such as Phenyl-dipyrenyl phosphine oxide (POPy2), such as gin-1,3,5-(3'-( a pyridine derivative such as pyridine-3"-yl)phenyl)benzene (TmPyPhB), a quinoline derivative such as (2-(3-(9-oxazolyl)phenyl)quinoline (mCQ)), Pyrimidine derivatives such as 2-phenyl-4,6-bis(3,5-dipyridylphenyl)pyrimidine (BPyPPM), pyridyl a derivative such as a phenanthroline derivative such as 2,4-bis(4-biphenyl)-6-(4'-(2-pyridyl)-4-biphenyl )-[1,3,5]3 (MPT) a derivative, a triazole derivative such as 3-phenyl-4-(1'-naphthyl)-5-phenyl-1,2,4-triazole (TAZ), An azole derivative such as 2-(4-biphenyl)-5-(4-t-butylphenyl-1,3,4- Diazole) (PBD) An oxadiazole derivative, an imidazole derivative such as 2,2',2"-(1,3,5-phenylene)-parade (1-phenyl-1-H-benzimidazole) (TPBI), An aromatic ring tetracarboxylic anhydride such as naphthalene or anthracene, bis[2-(2-hydroxyphenyl)benzothiazole chelate] zinc (Zn(BTZ) 2 ), ginseng (8-hydroxyquinoline) aluminum (Alq3) 2,5-bis(6'-(2',2"-dipyridyl))-1,1-dimethyl-3,4-diphenylcarbazole, represented by various metal complexes (Organic decane derivative represented by a carbazole derivative such as (PyPySPyPy)), and one or more of these may be used. Among the materials of the electron transport layer, a phosphine oxide derivative such as POPy 2 , a metal complex such as Alq 3 , and a pyridine derivative such as TmPyPhB are preferably used.
電子輸送層5之平均厚度未特別受限,但以10~150nm為宜,20~100nm更佳。 The average thickness of the electron transport layer 5 is not particularly limited, but is preferably 10 to 150 nm, more preferably 20 to 100 nm.
電子輸送層5之平均厚度可藉探針式膜厚計及分光橢率測量儀來測定。 The average thickness of the electron transport layer 5 can be measured by a probe type film thickness meter and a spectroscopic ellipsometer.
「電子注入層」 "electron injection layer"
設置由有機化合物構成之物來作為電子注入層4時,可使用一般用作電子注入層之材料的任一化合物,亦可將該等混合使用。可具體舉例如聚伸乙基亞胺、具有溴對離子之聚(9,9-雙(6”-三甲基銨己基)茀-co-alt-伸苯基)(即poly(9,9'-bis(6"-N,N,N-trimethylammoniumhexyl)-fluorene-co-alt-phenylene)with bromide counterions,FPQ-Br)、聚(9,9-雙(3’-二甲基胺基)丙基)2,7-茀-alt-2,7-(9,9-二辛基茀)(PFNR2)、聚伸烷基氧化物等。 When the material composed of the organic compound is provided as the electron injecting layer 4, any compound generally used as a material of the electron injecting layer may be used, or these may be used in combination. Specifically, for example, polyethylenimine, poly(9,9-bis(6"-trimethylammoniumhexyl)fluorene-co-alt-phenyl) having a bromine counter ion (ie, poly(9,9) ' -bis(6 " -N,N,N-trimethylammoniumhexyl)-fluorene-co-alt-phenylene) with bromide counterions, FPQ-Br), poly(9,9-bis(3'-dimethylamino) Propyl) 2,7-fluorene-alt-2,7-(9,9-dioctylfluorene) (PFNR 2 ), polyalkylene oxide, and the like.
此外,電子注入層4由無機化合物構成時,宜為金屬氧化物層等由無機氧化物構成之層。金屬氧化物層並未特別受限,舉例來說,可使用選自氧化鈦(TiO2)、氧化鋅 (ZnO)、氧化鎢(WO3)、氧化鈮(Nb2O5)、氧化鐵(Fe2O3)、氧化錫(SnO2)、氧化鎂(MgO)、氧化鉿(HfO2)、氧化鋯(ZrO2)、氧化銦鎵鋅(IGZO)中之1種或2種以上。由此等金屬氧化物層構成之電子注入層4具備電子注入層之機能及電極(陰極)之機能。 Further, when the electron injecting layer 4 is composed of an inorganic compound, it is preferably a layer made of an inorganic oxide such as a metal oxide layer. The metal oxide layer is not particularly limited, and for example, titanium oxide (TiO 2 ), zinc oxide (ZnO), tungsten oxide (WO 3 ), cerium oxide (Nb 2 O 5 ), iron oxide (which may be used) may be used. One or two or more kinds of Fe 2 O 3 ), tin oxide (SnO 2 ), magnesium oxide (MgO), cerium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), and indium gallium zinc oxide (IGZO). The electron injecting layer 4 composed of such a metal oxide layer functions as an electron injecting layer and an electrode (cathode).
此外,電子注入層4之材料未侷限於上述材料,例如也可使用LiF等。 Further, the material of the electron injecting layer 4 is not limited to the above materials, and for example, LiF or the like can also be used.
電子注入層4之平均厚度並未特別受限,但宜為1~1000nm,更宜為2~100nm。 The average thickness of the electron injecting layer 4 is not particularly limited, but is preferably 1 to 1000 nm, more preferably 2 to 100 nm.
電子注入層4之平均厚度可藉探針式膜厚計及分光橢率測量儀來測定。 The average thickness of the electron injecting layer 4 can be measured by a probe type film thickness meter and a spectroscopic ellipsometer.
「第2電極(陰極)」 "Second electrode (cathode)"
圖1所示有機EL元件1之第2電極3係作為陰極發揮機能。第2電極3可列舉如Au、Pt、Ag、Cu、Al或含有該等之合金等。其中,第2電極3尤宜使用Au、Ag、Al。 The second electrode 3 of the organic EL element 1 shown in Fig. 1 functions as a cathode. The second electrode 3 may, for example, be Au, Pt, Ag, Cu, Al or an alloy containing the same. Among them, Au, Ag, and Al are particularly preferably used for the second electrode 3.
第2電極3之平均厚度未特別受限,但宜為10~1000nm,更宜為30~150nm。此外,第2電極3使用不透過之材料時,舉例來說,可將其平均厚度定為10~30nm程度,藉此可用作頂部發光型及透明型之陽極。 The average thickness of the second electrode 3 is not particularly limited, but is preferably 10 to 1000 nm, more preferably 30 to 150 nm. Further, when the second electrode 3 is made of a material that is impermeable, for example, the average thickness thereof can be set to about 10 to 30 nm, whereby it can be used as an anode of a top emission type and a transparent type.
第2電極3之平均厚度可於第2電極3成膜時以水晶振動子膜厚計測定。 The average thickness of the second electrode 3 can be measured by the crystal vibrating film thickness when the second electrode 3 is formed.
圖1所示本實施形態之有機EL元件1可適當使用習知方法來製造。 The organic EL device 1 of the present embodiment shown in Fig. 1 can be produced by a conventional method as appropriate.
本實施形態之有機EL元件1係於第1電極9(陽極) 與第2電極3(陰極)之間具有發光層6及配置在發光層6之第1電極9側的電洞輸送層7,因電洞輸送層7含有上述通式(1-1)所示化合物,將會具備帶隙能量大且電性/熱安定性優異之電洞輸送層,成為長壽命且高發光效率之元件。 The organic EL element 1 of the present embodiment is applied to the first electrode 9 (anode) The light-emitting layer 6 and the hole transport layer 7 disposed on the first electrode 9 side of the light-emitting layer 6 are provided between the second electrode 3 (cathode), and the hole transport layer 7 is represented by the above formula (1-1). The compound will have a hole transporting layer with a large band gap energy and excellent electrical/thermal stability, and will be a long-life and high luminous efficiency component.
(其他例) (other examples)
圖2為概略截面圖,其用以說明本發明之有機EL元件之其他例。圖2所示之有機EL元件1A具有在基板2上依序形成第1電極9、電子注入層4、電子輸送層5、發光層6、電洞輸送層7、電洞注入層8及第2電極3的積層構造。 Fig. 2 is a schematic cross-sectional view for explaining another example of the organic EL device of the present invention. The organic EL element 1A shown in FIG. 2 has the first electrode 9, the electron injection layer 4, the electron transport layer 5, the light-emitting layer 6, the hole transport layer 7, the hole injection layer 8, and the second layer sequentially formed on the substrate 2. The laminated structure of the electrode 3.
圖2所示有機EL元件1A中,第1電極9作為陰極發揮機能,第2電極3則作為陽極發揮機能。 In the organic EL element 1A shown in FIG. 2, the first electrode 9 functions as a cathode, and the second electrode 3 functions as an anode.
圖2所示有機EL元件1A在基板2上形成有作為陰極發揮機能之第1電極9,該元件係一於基板2與發光層6之間配置有第1電極9之逆向結構之物。 In the organic EL element 1A shown in FIG. 2, a first electrode 9 functioning as a cathode is formed on the substrate 2, and this element is a structure in which the reverse structure of the first electrode 9 is disposed between the substrate 2 and the light-emitting layer 6.
圖2所示有機EL元件1A與圖1所示有機EL元件1之差異處僅在於電子注入層4、電子輸送層5、發光層6、電洞輸送層7及電洞注入層8之積層順序相反。因此,對圖2所示有機EL元件1A中與圖1所示有機EL元件1相同之構件賦予相同元件符號,並省略其說明。 The difference between the organic EL element 1A shown in FIG. 2 and the organic EL element 1 shown in FIG. 1 is only the order of lamination of the electron injection layer 4, the electron transport layer 5, the light-emitting layer 6, the hole transport layer 7, and the hole injection layer 8. in contrast. Therefore, members of the organic EL element 1A shown in FIG. 2 that are the same as those of the organic EL element 1 shown in FIG. 1 are denoted by the same reference numerals, and their description will be omitted.
此外,本發明之有機EL元件並不侷限於圖1及圖2所示有機EL元件。亦即,本發明之有機EL元件僅需是在第1電極9(陽極)與第2電極3(陰極)之間具有發光層6及配置在發光層6之第1電極9側的電洞輸送層7且電洞輸送層7含有上述通式(1-1)所示化合物者即可,電子注入層4、電子輸送 層5、第2電洞輸送層、電洞注入層8則視需要形成即可。 Further, the organic EL device of the present invention is not limited to the organic EL device shown in Figs. 1 and 2 . In other words, the organic EL device of the present invention needs only to have the light-emitting layer 6 between the first electrode 9 (anode) and the second electrode 3 (cathode) and the hole transporting on the side of the first electrode 9 of the light-emitting layer 6. The layer 7 and the hole transport layer 7 may contain the compound represented by the above formula (1-1), the electron injection layer 4, and electron transport. The layer 5, the second hole transport layer, and the hole injection layer 8 may be formed as needed.
此外,本發明之有機EL元件亦可在圖1及圖2所示各層之間進一步具有其他層。 Further, the organic EL device of the present invention may further have other layers between the layers shown in Figs. 1 and 2 .
本發明之有機EL元件亦可從進一步提高有機EL元件之特性等理由出發,而視需要具有例如電洞阻止層及電子元件層等。 The organic EL device of the present invention may be based on reasons such as further improving the characteristics of the organic EL device, and may have, for example, a hole blocking layer and an electronic device layer.
形成此等層之材料可使用一般可用來形成該等層之材料。此外,形成此等層之方法可使用一般可用來形成此等層之方法。 The materials from which such layers are formed may be materials which are generally used to form the layers. In addition, methods of forming such layers can use methods that are generally used to form such layers.
本發明之有機EL元件既可藉由適當選擇有機化合物層之材料而使發光色變化,也可併用濾色器等而獲得所欲之發光色。因此,可適於用作顯示裝置之發光部位及照明裝置。例如,可製成使用本發明之有機EL元件的顯示裝置,其具有顯示面板及驅動該顯示面板之驅動電路,且作為顯示面板具有長壽命並具有高發光效率。 In the organic EL device of the present invention, the luminescent color can be changed by appropriately selecting the material of the organic compound layer, or a desired color can be obtained by using a color filter or the like in combination. Therefore, it can be suitably used as a light-emitting portion of a display device and a lighting device. For example, a display device using the organic EL element of the present invention having a display panel and a driving circuit for driving the display panel can be fabricated, and has a long life as a display panel and high luminous efficiency.
此外,上述實施形態是舉本發明化合物用作電洞輸送層之電洞輸送性材料的情況為例予以說明,但舉例來說,本發明之化合物亦可用於有機EL元件中之電洞注入層以及客體材料為磷光材料時之主體材料等,還可使用於有機太陽電池之電洞輸送性材料等。 Further, the above embodiment is illustrative of a case where the compound of the present invention is used as a hole transporting material of a hole transporting layer, but for example, the compound of the present invention can also be used for a hole injecting layer in an organic EL device. And the host material when the guest material is a phosphorescent material, etc., and can also be used for a hole transporting material of an organic solar cell.
實施例 Example
「化合物之合成」 "Synthesis of Compounds"
(合成例1) (Synthesis Example 1)
茲以下述方法合成出通式(1-83)所示化合物。 The compound of the formula (1-83) was synthesized by the following method.
以下述方法合成出上述通式(1-192)所示N-(4-氯-3-甲基苯基)-N-二苯并[b,d]噻吩-4-胺。 N-(4-chloro-3-methylphenyl)-N-dibenzo[b,d]thiophen-4-amine represented by the above formula (1-192) was synthesized by the following method.
於氬氣環境下將上述通式(1-190)所示4-溴二苯并噻吩5.79g(22.0mmol)、上述通式(1-191)所示4-氯-3-甲基苯胺3.74g(26.4mmol)、第三丁氧基鉀3.70g(33.0mmol)、乙酸鈀(II)99mg(0.44mmol)及脫水甲苯60mL裝入設有攪拌件之150mL舒倫克管(Schlenk tube)中並脫氣。之後,加入三第三丁基膦267mg(1.32mmol)並密栓,於100℃下攪拌10小 時。 5.79 g (22.0 mmol) of 4-bromodibenzothiophene represented by the above formula (1-190) and 4-chloro-3-methylaniline of the above formula (1-191) in an argon atmosphere: 3.74 g (26.4 mmol), 3.70 g (33.0 mmol) of potassium third butoxide, 99 mg (0.44 mmol) of palladium (II) acetate and 60 mL of dehydrated toluene were placed in a 150 mL Schlenk tube equipped with a stirring member. And degas. Thereafter, 267 mg (1.32 mmol) of tri-tert-butylphosphine was added and the plug was tightly stirred, and the mixture was stirred at 100 ° C for 10 hours. Time.
冷卻至室溫後,將反應混合物注加至水中,以二氯甲烷萃取後進行水洗。以無水硫酸鈉乾燥有機層後,餾除溶劑。利用以己烷:二氯甲烷(4:1)作為溶出液之二氧化矽凝膠管柱層析法來純化所得粗生成物。 After cooling to room temperature, the reaction mixture was added to water, extracted with dichloromethane and washed with water. After the organic layer was dried over anhydrous sodium sulfate, the solvent was evaporated. The obtained crude product was purified by cerium oxide gel column chromatography using hexane: dichloromethane (4:1) as an eluent.
藉由進行以上步驟,以產量3.75g、產率53%製得上述通式(1-192)所示化合物。化合物之鑑定係以質量分析法確認分子離子尖峰與目的物一致來進行。 By carrying out the above procedure, the compound of the above formula (1-192) was obtained in a yield of 3.75 g and a yield of 53%. The identification of the compound was carried out by mass spectrometry to confirm that the molecular ion spike coincided with the target.
接著以下述方法合成出上述通式(1-194)所示N-(4-氯-3-甲基苯基)-N-苯基二苯并[b,d]噻吩-4-胺。 Next, N-(4-chloro-3-methylphenyl)-N-phenyldibenzo[b,d]thiophen-4-amine represented by the above formula (1-194) was synthesized by the following method.
於氬氣環境下將上述通式(1-192)所示N-(4-氯-3-甲基苯基)-N-二苯并[b,d]噻吩-4-胺3.56g(11.0mmol)、上述通式(1-193)所示碘苯2.69g(13.2mmol)、第三丁氧基鉀1.85g(16.5mmol)、乙酸鈀(II)49mg(0.22mmol)及脫水甲苯30mL裝入設有攪拌件之100mL舒倫克管中並脫氣。之後,加入三第三丁基膦134mg(0.66mmol)並密栓,於100℃下攪拌10小時。 N-(4-chloro-3-methylphenyl)-N-dibenzo[b,d]thiophen-4-amine represented by the above formula (1-192) in an argon atmosphere, 3.56 g (11.0) Ment), 2.69 g (13.2 mmol) of iodobenzene represented by the above formula (1-193), 1.85 g (16.5 mmol) of potassium third butoxide, 49 mg (0.22 mmol) of palladium (II) acetate, and 30 mL of dehydrated toluene Into a 100 mL Schlenk tube with a stirrer and degas. Thereafter, 134 mg (0.66 mmol) of tri-tert-butylphosphine was added and the plug was tightly stirred, and the mixture was stirred at 100 ° C for 10 hours.
冷卻至室溫後,將反應混合物注加至水中,以二氯甲烷萃取後進行水洗。以無水硫酸鈉乾燥有機層後,餾除溶劑。利用以己烷:二氯甲烷(6:1)作為溶出液之二氧化矽凝膠管柱層析法來純化所得粗生成物。 After cooling to room temperature, the reaction mixture was added to water, extracted with dichloromethane and washed with water. After the organic layer was dried over anhydrous sodium sulfate, the solvent was evaporated. The obtained crude product was purified by cerium oxide gel column chromatography using hexane: dichloromethane (6:1) as an eluent.
藉由進行以上步驟,以產量3.79g、產率86%製得上述通式(1-194)所示化合物。化合物之鑑定係以質量分析法確認分子離子尖峰與目的物一致來進行。 By carrying out the above procedure, the compound of the above formula (1-194) was obtained in a yield of 3.79 g and a yield of 86%. The identification of the compound was carried out by mass spectrometry to confirm that the molecular ion spike coincided with the target.
接著,以下述方法合成出上述通式(1-83)所示N,N-雙(二苯并[b,d]噻吩-4-基)-2,2’-二甲基-[1,1’-聯苯]-4,4’-二胺。 Next, N,N-bis(dibenzo[b,d]thiophen-4-yl)-2,2'-dimethyl-[1, represented by the above formula (1-83) was synthesized by the following method. 1'-biphenyl]-4,4'-diamine.
於氬氣環境下將雙(1,5-環辛二烯)鎳(0)5.17g(18.8mmol)、2,2’-聯吡啶2.94g(18.8mmol)、1,5-環辛二烯2.03g(18.8mmol)、DMF20mL裝入設有攪拌件之150mL舒倫克管中並密栓,於60℃下攪拌30分鐘後冷卻到室溫。 Bis(1,5-cyclooctadiene)nickel (0) 5.17 g (18.8 mmol), 2,2'-bipyridine 2.94 g (18.8 mmol), 1,5-cyclooctadiene under argon atmosphere 2.03 g (18.8 mmol) and DMF 20 mL were placed in a 150 mL Schlenk tube equipped with a stirring member and tightly sealed, and stirred at 60 ° C for 30 minutes, and then cooled to room temperature.
之後,於氬氣環境下將舒倫克管開栓,再加入已溶解於THF50mL之上述通式(1-194)所示N-(4-氯-3-甲基苯基)-N-苯基二苯并[b,d]噻吩-4-胺3.76g(9.40mmol),密栓後於80℃下攪拌15小時。 Thereafter, the Schlenk tube was opened under an argon atmosphere, and N-(4-chloro-3-methylphenyl)-N-benzene represented by the above formula (1-194) dissolved in 50 mL of THF was further added. 3.76 g (9.40 mmol) of bisbenzo[b,d]thiophen-4-amine was stirred at 80 ° C for 15 hours.
冷卻至室溫並餾除溶劑後,將溶解於二氯甲烷之反應混合物注加到水中,以二氯甲烷萃取後進行水洗。以無水硫酸鈉乾燥有機層後,餾除溶劑。利用以己烷:二氯甲烷(5:1)作為溶出液之二氧化矽凝膠管柱層析法來純化所得粗生成物。 After cooling to room temperature and distilling off the solvent, the reaction mixture dissolved in dichloromethane was poured into water, extracted with dichloromethane, and washed with water. After the organic layer was dried over anhydrous sodium sulfate, the solvent was evaporated. The obtained crude product was purified by cerium oxide gel column chromatography using hexane: dichloromethane (5:1) as an eluent.
藉由進行以上步驟,以產量3.01g、產率88%製得HPLC純度為98.5%之目的物。之後,將所得目的物以丙酮洗淨,更反覆進行利用甲苯之再結晶生成,而以產量1.55g、回收率51%製得HPLC純度為99.9%之上述通式(1-83)所示化合物。 By carrying out the above procedure, an object having an HPLC purity of 98.5% was obtained in a yield of 3.01 g and a yield of 88%. After that, the obtained product was washed with acetone, and recrystallized by toluene was further produced, and the compound of the above formula (1-83) having an HPLC purity of 99.9% was obtained at a yield of 1.55 g and a recovery of 51%. .
利用HPLC之純度測定係以如下所示之條件進行。 The purity measurement by HPLC was carried out under the conditions shown below.
管柱「InertSustain,C18,5μm,4.6mm×150mm(逆相 系)」,溶離液「乙腈:THF=90:10」,流速「1.0ml/min」,Uv檢測器「254nm」。 Column "InertSustain, C18, 5μm, 4.6mm × 150mm (reverse phase ")), the solution "acetonitrile: THF = 90:10", the flow rate "1.0 ml / min", Uv detector "254 nm".
化合物之鑑定係藉由以質量分析確定分子離子尖峰與目的物一致以及1H-NMR(Nuclear Magnetic Resonance)來進行。 The identification of the compound was carried out by mass spectrometry to determine that the molecular ion spike coincided with the target and 1 H-NMR (Nuclear Magnetic Resonance).
1H-NMR、CDCl3 δ1.98(s、6H)、6.89-7.00(m、8H)、7.08(d、J=8.2Hz、4H)、7.22-7.00(m、4H)、7.31-7.45(m、8H)、7.7(d、J=7.3Hz、2H)、7.98(d、J=7.8Hz、2H)、8.13(d、J=7.3Hz、2H) 1 H-NMR, CDCl 3 δ 1.98 (s, 6H), 6.89-7.00 (m, 8H), 7.08 (d, J = 8.2 Hz, 4H), 7.22-7.00 (m, 4H), 7.31-7.45 ( m, 8H), 7.7 (d, J = 7.3 Hz, 2H), 7.98 (d, J = 7.8 Hz, 2H), 8.13 (d, J = 7.3 Hz, 2H)
(合成例2) (Synthesis Example 2)
利用與上述方法有別之下述方法來合成出通式(1-83)所示化合物。 The compound of the formula (1-83) is synthesized by the following method different from the above method.
以下述方法合成出上述通式(1-196)所示化合物。 The compound of the above formula (1-196) was synthesized by the following method.
於設有攪拌件並經氬置換之300mL舒倫克管中裝入上述通式(1-190)所示4-溴二苯并噻吩(13.16g,50mmol)、上述通式(1-195)所示苯胺(4.66g,50mmol)、乙酸鈀(225mg, 1.0mmol)、甲苯(150mL)、三第三丁基膦(202mg,1.0mmol)及第三丁氧基鉀(5.61g,50mmol)並密閉,於100℃下攪拌10小時。 The 4-bromodibenzothiophene (13.16 g, 50 mmol) represented by the above formula (1-190) and the above formula (1-195) were placed in a 300 mL Schlenk tube provided with a stirring member and replaced with argon. Aniline (4.66 g, 50 mmol), palladium acetate (225 mg, 1.0 mmol), toluene (150 mL), tri-tert-butylphosphine (202 mg, 1.0 mmol), and potassium tributoxide (5.61 g, 50 mmol) were sealed and stirred at 100 ° C for 10 hours.
之後,將反應容器放冷至室溫附近,打開蓋子並於其中裝水(150mL)。將內容物移至分液漏斗使有機相與水相分離後,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,藉由過濾來去除硫酸鈉,將有機相濃縮。再以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)來純化濃縮所得之混合物,製得目的之上述通式(1-196)所示化合物(產量10.7g,產率77.8%)。 Thereafter, the reaction vessel was allowed to cool to near room temperature, and the lid was opened and water (150 mL) was placed therein. After the contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. Further, the resulting mixture is purified by cerium oxide gel column chromatography (developing solvent: hexane/dichloromethane = 3/1) to obtain the compound of the above formula (1-196). The yield was 10.7 g, and the yield was 77.8%).
化合物之鑑定使用1H-NMR進行。 Identification of the compounds was carried out using 1 H-NMR.
1H-NMR、DMSO-d6、δ:6.85(t、J=7.3Hz、1H)、6.98(d、J=7.8Hz、8H)、7.23(t、J=8.3Hz、2H)、7.32(d、J=7.8Hz、1H)、7.45(t、J=7.8Hz、1H)、7.50-7.53(m、2H)、8.01-8.03(m、2H)、8.17(s、1H)、8.33-8.35(m、1H) 1 H-NMR, DMSO-d 6 , δ: 6.85 (t, J = 7.3 Hz, 1H), 6.98 (d, J = 7.8 Hz, 8H), 7.23 (t, J = 8.3 Hz, 2H), 7.32 ( d, J = 7.8 Hz, 1H), 7.45 (t, J = 7.8 Hz, 1H), 7.50 - 7.53 (m, 2H), 8.01 - 8.03 (m, 2H), 8.17 (s, 1H), 8.33 - 8.35 (m, 1H)
接著,以下述所示方法合成出上述通式(1-83)所示化合物。 Next, the compound of the above formula (1-83) was synthesized by the method shown below.
於設有攪拌件且經氬置換之100mL舒倫克管中裝入上述通式(1-196)所示化合物(2.11g,8.0mmol)、上述通式(1-197)所示4,4’-二碘-2,2’-二甲基-1,1’-聯苯(1.74g,4.0mmol)、乙酸鈀(36mg、0.16mmol)、甲苯(50mL)、三第三丁基膦(32mg、0.16mmol)及第三丁氧基鉀(0.90g、8.0mmol),密閉後於100℃下攪拌10小時。 The compound represented by the above formula (1-196) (2.11 g, 8.0 mmol) and the above formula (1-197) 4, 4 were placed in a 100 mL Schlenk tube equipped with a stirring member and replaced with argon. '-Diiodo-2,2'-dimethyl-1,1'-biphenyl (1.74 g, 4.0 mmol), palladium acetate (36 mg, 0.16 mmol), toluene (50 mL), tri-tert-butylphosphine ( 32 mg, 0.16 mmol) and potassium butoxide (0.90 g, 8.0 mmol) were stirred, and then stirred at 100 ° C for 10 hours.
之後,將反應容器放冷到室溫附近,打開蓋子並 於其中裝水(50mL)。將內容物移到分液漏斗,使有機相與水相分離後,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,藉由過濾去除硫酸鈉,濃縮有機相。以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)來純化濃縮所得之混合物,獲得目的之上述通式(1-83)所示化合物。產量為2.40g,產率為82.3%。 After that, let the reaction vessel cool to near room temperature, open the lid and Water (50 mL) was placed therein. The contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. The obtained mixture was concentrated and purified by silica gel column chromatography (developing solvent: hexane/dichloromethane = 3/1) to obtain the compound of the above formula (1-83). The yield was 2.40 g and the yield was 82.3%.
(合成例3) (Synthesis Example 3)
以下述所示方法合成出下述通式(1-202)所示化合物。 The compound represented by the following formula (1-202) was synthesized by the method shown below.
以下述所示方法合成出上述通式(1-199)所示2,2’-二甲基-1,1’-聯苯。 2,2'-dimethyl-1,1'-biphenyl represented by the above formula (1-199) was synthesized by the method shown below.
於氬氣環境下,於設有攪拌件之四口燒瓶中調整上述通式(1-198)所示2-溴甲苯(11.97g,70.0mmol)之二乙醚(140mL)溶液,冷卻到-15℃。滴定1.6M(莫耳/L)之正丁基鋰(45mL,72mmol)後,攪拌2小時。之後添加硼酸三甲酯(7.27g,70.0mmol),一邊徐徐使其升溫至室溫(rt),一邊直接攪拌20小時。於反應溶液中加水,使反應停止後,減壓下去除醚及己烷。 A solution of 2-bromotoluene (11.97 g, 70.0 mmol) in diethyl ether (140 mL) of the above formula (1-198) was adjusted in a four-necked flask equipped with a stirring apparatus under an argon atmosphere, and cooled to -15. °C. After 1.6 M (mole/L) of n-butyllithium (45 mL, 72 mmol) was added, the mixture was stirred for 2 hours. Thereafter, trimethyl borate (7.27 g, 70.0 mmol) was added, and the mixture was stirred for 20 hours while gradually raising the temperature to room temperature (rt). Water was added to the reaction solution to stop the reaction, and ether and hexane were removed under reduced pressure.
將冷卻管裝設於反應容器,再次使容器內進行氬置換。之後,添加2-溴甲苯(11.97g,70.0mmol)、肆三苯膦鈀(0.809g,0.7mmol)、碳酸鉀(9.67g,70mmol)及甲苯(70mL)後,進一步追加水使甲苯與水同量。之後,於100℃下攪拌20小時。 The cooling tube was placed in a reaction vessel, and the inside of the vessel was again subjected to argon replacement. Thereafter, 2-bromotoluene (11.97 g, 70.0 mmol), decyltriphenylphosphine palladium (0.809 g, 0.7 mmol), potassium carbonate (9.67 g, 70 mmol), and toluene (70 mL) were added, and then water was further added to make toluene and water. The same amount. Thereafter, the mixture was stirred at 100 ° C for 20 hours.
將反應液移到分液漏斗,使有機相與水相分離,以醚類進行萃取作業。以碳酸鈉乾燥有機相後,進行過濾、濃縮,再以二氧化矽凝膠管柱層析法(展開溶劑:己烷)使上述通式(1-199)所示化合物分離。目的物之鑑定係以GCMS進行。產量為7.84g,產率為61%。 The reaction solution was transferred to a separatory funnel to separate the organic phase from the aqueous phase, and the extraction was carried out with an ether. The organic phase was dried over sodium carbonate, filtered, concentrated, and the compound of the above formula (1-199) was separated by cerium dioxide gel column chromatography (developing solvent: hexane). Identification of the target was performed by GCMS. The yield was 7.84 g and the yield was 61%.
接著,以下述方法合成出上述通式(1-200)所示4-溴-2,2’-二甲基-1,1’-聯苯。 Next, 4-bromo-2,2'-dimethyl-1,1'-biphenyl represented by the above formula (1-200) was synthesized by the following method.
將滴定漏斗裝設於設有攪拌件之四口燒瓶,並使容器內進行氬置換後,裝入上述通式(1-199)所示2,2’-二甲基-1,1’-聯苯(5.47g,30.0mmol)之二氯甲烷(90mL)溶液及氯化鋯(0.35g,1.5mmol),冷卻至-15℃。 The titration funnel was placed in a four-necked flask equipped with a stirring member, and after the container was subjected to argon replacement, 2,2'-dimethyl-1,1'- represented by the above formula (1-199) was charged. A solution of biphenyl (5.47 g, 30.0 mmol) in dichloromethane (90 mL) and zirconium chloride (0.35 g, 1.5 mmol) was cooled to -15 °C.
於滴定漏斗中裝入NBS(5.34g,30.0mmol)之 DMF(30mL)溶液,少量逐次滴定。全部滴定後,徐徐昇溫,於室溫(rt)下攪拌48小時。於反應溶液加水後,減壓下去除二氯甲烷,再以二乙醚萃取目的物。以硫酸鈉乾燥有機相,進行過濾、濃縮後,以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)分離出上述通式(1-200)所示目的物。產量為5.09g,產率為65%。 NBS (5.34 g, 30.0 mmol) was charged into the titration funnel. A solution of DMF (30 mL) was titrated in small portions. After all titration, the temperature was gradually raised and stirred at room temperature (rt) for 48 hours. After adding water to the reaction solution, dichloromethane was removed under reduced pressure, and the title compound was extracted with diethyl ether. The organic phase was dried over sodium sulfate, filtered and concentrated, and then the above-mentioned formula (1-200) was separated by cerium dioxide gel column chromatography (developing solvent: hexane/dichloromethane = 3/1). Show the object. The yield was 5.09 g and the yield was 65%.
接著,以下述所示方法合成出上述通式(1-201)所示N4,N4’-雙(二苯并[b,d]噻吩-4-基)-2,2’-二甲基-[1,1’-聯苯]-4,4’-二胺。 Next, N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-2,2'-dimethyl- represented by the above formula (1-201) was synthesized by the method shown below. [1,1'-biphenyl]-4,4'-diamine.
使設有攪拌件之200mL舒倫克管進行氬置換後,添加雙(1,5-環辛二烯)鎳(0)(10.0g,36.4mmol)、2,2’-聯吡啶(5.68g,36.4mmol)及THF(100mL)並攪拌45分鐘。之後,進一步添加上述通式(1-192)所示N-(4-氯-3-甲基苯基)-N-二苯并[b,d]噻吩-4-胺(2.59g,8.0mmol)之THF(20mL)溶液,65℃下攪拌24小時。 After argon replacement of a 200 mL Schlenk tube equipped with a stirring member, bis(1,5-cyclooctadiene)nickel (0) (10.0 g, 36.4 mmol) and 2,2'-bipyridine (5.68 g) were added. , 36.4 mmol) and THF (100 mL) and stirred for 45 min. Thereafter, N-(4-chloro-3-methylphenyl)-N-dibenzo[b,d]thiophen-4-amine represented by the above formula (1-192) (2.59 g, 8.0 mmol) was further added. A solution of THF (20 mL) was stirred at 65 ° C for 24 hours.
之後,對反應溶液加水,一邊以二氯甲烷洗淨,一邊進行矽藻土過濾。將所得濾液濃縮到可去除THF之程度。以二氯甲烷從該溶液萃取出目的物。以硫酸鈉乾燥所得有機相後,進行過濾、濃縮。之後,以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=1/1)分離出上述通式(1-201)所示目的物。產量為0.55g,產率為12%。 Thereafter, water was added to the reaction solution, and the mixture was washed with dichloromethane to carry out filtration through diatomaceous earth. The resulting filtrate was concentrated to the extent that THF could be removed. The object was extracted from the solution with dichloromethane. The obtained organic phase was dried over sodium sulfate, filtered and concentrated. Thereafter, the object of the above formula (1-201) was isolated by cerium oxide gel column chromatography (developing solvent: hexane/dichloromethane = 1/1). The yield was 0.55 g and the yield was 12%.
接著,以下述所示方法合成出上述通式(1-202)所示N4,N4’-雙(二苯并[b,d]噻吩-4-基)-N4,N4’-雙(2,2’-二甲基-[1,1’-聯苯]-4-基)-2,2’-二甲基-[1,1’-聯苯]-4,4’-二 胺。 Next, N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-N4,N4'-bis (2, represented by the above formula (1-202) was synthesized by the method shown below. 2'-Dimethyl-[1,1'-biphenyl]-4-yl)-2,2'-dimethyl-[1,1'-biphenyl]-4,4'-di amine.
使備有攪拌子之舒倫克管進行氬置換,裝入上述通式(1-201)所示N4,N4’-雙(二苯并[b,d]噻吩-4-基)-2,2’-二甲基-[1,1’-聯苯]-4,4’-二胺(0.5g,0.89mmol)、上述通式(1-200)所示4-溴-2,2’-二甲基-1,1’-聯苯(0.56g,0.22mmol)、乙酸鈀(9mg,0.04mmol)、甲苯(50mL)、三第三丁基膦(8mg,0.04mmol)及第三丁氧基鉀(0.22g,2.0mmol),於100℃下攪拌6小時。 The Schlenk tube provided with the stirrer is subjected to argon substitution, and is charged with N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-2 represented by the above formula (1-201). 2'-Dimethyl-[1,1'-biphenyl]-4,4'-diamine (0.5 g, 0.89 mmol), 4-bromo-2,2' represented by the above formula (1-200) -Dimethyl-1,1'-biphenyl (0.56 g, 0.22 mmol), palladium acetate (9 mg, 0.04 mmol), toluene (50 mL), tri-tert-butylphosphine (8 mg, 0.04 mmol) and third Potassium oxychloride (0.22 g, 2.0 mmol) was stirred at 100 ° C for 6 hours.
之後加水使反應,以二乙醚進行萃取操作。以硫酸鈉乾燥有機相,過濾、濃縮之。之後,以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=2/1)分離出上述通式(1-202)所示目的物。 Then, water was added to make the reaction, and extraction was carried out with diethyl ether. The organic phase was dried over sodium sulfate, filtered and concentrated. Thereafter, the object of the above formula (1-202) was isolated by ruthenium dioxide gel column chromatography (developing solvent: hexane / dichloromethane = 2 / 1).
(合成例4) (Synthesis Example 4)
以下述所示方法合成出通式(1-107)所示化合物。 The compound of the formula (1-107) was synthesized by the method shown below.
以下述所示方法合成出上述通式(1-204)所示化 合物。 The above formula (1-204) was synthesized by the method shown below. Compound.
於備有攪拌件且經氬置換之300mL舒倫克管中裝入上述通式(1-203)所示2-溴二苯并噻吩(13.16g,50mmol)、上述通式(1-195)所示苯胺(4.66g,50mmol)、乙酸鈀(225mg,1.0mmol)、甲苯(150mL)、三第三丁基膦(202mg,1.0mmol)及第三丁氧基鉀(5.61g、50mmol)並將其密閉。之後,於100℃下攪拌18小時。 2-Bromodibenzothiophene (13.16 g, 50 mmol) represented by the above formula (1-203), and the above formula (1-195) were placed in a 300 mL Schlenk tube equipped with a stirring member and replaced with argon. Aniline (4.66 g, 50 mmol), palladium acetate (225 mg, 1.0 mmol), toluene (150 mL), tri-tert-butylphosphine (202 mg, 1.0 mmol) and potassium butoxide (5.61 g, 50 mmol) Seal it. Thereafter, the mixture was stirred at 100 ° C for 18 hours.
之後,將反應容器放冷到室溫附近,打開蓋子並於其中裝水(150mL)。將內容物移到分液漏斗,使有機相與水相分離後,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,以過濾去除硫酸鈉,濃縮有機相。以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)純化濃縮所得之混合物,製得目的之上述通式(1-204)所示化合物。產量為7.85g,產率為57.1%。合成出之化合物使用MS(Mass Spectrum)圖譜鑑定。 Thereafter, the reaction vessel was allowed to cool to near room temperature, and the lid was opened and water (150 mL) was placed therein. The contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. The resulting mixture was purified by silica gel column chromatography (developing solvent: hexane/dichloromethane = 3/1) to obtain the compound of the above formula (1-204). The yield was 7.85 g and the yield was 57.1%. The synthesized compound was identified using a MS (Mass Spectrum) pattern.
接著,以下述方法合成出上述通式(1-107)所示化合物。 Next, the compound of the above formula (1-107) was synthesized by the following method.
於備有攪拌件並經氬置換之100mL舒倫克管中裝入上述通式(1-204)所示化合物(2.11g,8.0mmol)、上述通式(1-197)所示4,4’-二碘-2,2’-二甲基-1,1’-聯苯(1.74g,4.0mmol)、乙酸鈀(36mg,0.16mmol)、甲苯(50mL)、三第三丁基膦(32mg,0.16mmol)及第三丁氧基鉀(0.90g,8.0mmol)並密閉。之後,於100℃下攪拌18小時。 The compound of the above formula (1-204) (2.11 g, 8.0 mmol) and the above formula (1-197) 4, 4 were placed in a 100 mL Schlenk tube equipped with a stirring member and replaced with argon. '-Diiodo-2,2'-dimethyl-1,1'-biphenyl (1.74 g, 4.0 mmol), palladium acetate (36 mg, 0.16 mmol), toluene (50 mL), tri-tert-butylphosphine ( 32 mg, 0.16 mmol) and potassium t-butoxide (0.90 g, 8.0 mmol) were sealed. Thereafter, the mixture was stirred at 100 ° C for 18 hours.
之後,將反應容器放冷到室溫附近,打開蓋子並 於其中裝水(50mL)。將內容物移到分液漏斗,使有機相與水相分離後,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,藉由過濾去除硫酸鈉,濃縮有機相。以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)純化濃縮所得之混合物,製得目的之上述通式(1-107)所示化合物。產量為2.32g,產率為79.6%。 After that, let the reaction vessel cool to near room temperature, open the lid and Water (50 mL) was placed therein. The contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. The resulting mixture was purified by silica gel column chromatography (developing solvent: hexane/dichloromethane = 3/1) to give the desired compound of the above formula (1-107). The yield was 2.32 g and the yield was 79.6%.
(合成例5) (Synthesis Example 5)
以下述所示方法合成出下述通式(1-95)所示化合物。 The compound represented by the following formula (1-95) was synthesized by the method shown below.
以下述所示方法合成出上述通式(1-207)所示化合物。 The compound of the above formula (1-207) was synthesized by the method shown below.
於備有攪拌子並經氬置換之200mL舒倫克管中裝入上述通式(1-205)所示1-甲基-2-溴-4-氯苯(5.02g,20.0mmol)及二乙醚(50mL),攪拌並冷卻到-15℃。對其滴定1.6M(莫耳/L)之正丁基鋰‧己烷溶液(13.0mL,20.5mmol)。攪拌1小時後添加硼酸三甲酯(2.13g,20.5mmol),離開冷卻浴,一邊從-15℃昇溫到室溫一邊攪拌20小時,製得上述通式(1-206)所 示化合物。 The 2-methyl-2-bromo-4-chlorobenzene (5.02 g, 20.0 mmol) represented by the above formula (1-205) and the second were placed in a 200 mL Schlenk tube equipped with a stirrer and replaced with argon. Diethyl ether (50 mL) was stirred and cooled to -15 °C. A 1.6 M (mol/L) n-butyllithium ‧ solution (13.0 mL, 20.5 mmol) was titrated. After stirring for 1 hour, trimethyl borate (2.13 g, 20.5 mmol) was added, and the mixture was stirred for 20 hours while warming from -15 ° C to room temperature to obtain the above formula (1-206). Show compound.
少量漸次添加蒸餾水(20mL),使反應停止,於減壓下去除二乙醚及己烷。裝設冷卻管,使容器再次進行氬置換後,添加蒸餾水(30mL)、1-甲基-2-溴-4-氯苯(5.23g,20.5mmol)、肆三苯基膦鈀(0.462g,0.40mmol)、碳酸鉀(2.76g,20mmol)及甲苯(100mL),回流20小時。 A small amount of distilled water (20 mL) was gradually added to stop the reaction, and diethyl ether and hexane were removed under reduced pressure. A cooling tube was installed, and the vessel was again subjected to argon replacement, and then distilled water (30 mL), 1-methyl-2-bromo-4-chlorobenzene (5.23 g, 20.5 mmol), and triphenylphosphine palladium (0.462 g, 0.40 mmol), potassium carbonate (2.76 g, 20 mmol) and toluene (100 mL) were refluxed for 20 hr.
冷卻到室溫後,將內容物移到分液漏斗,使有機相與水相分離,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,以過濾去除硫酸鈉,濃縮有機相。以二氧化矽凝膠管柱層析法(展開溶劑:己烷)純化所得混合物,製得目的之上述通式(1-207)所示化合物。產量為4.14g,產率為82.4%。 After cooling to room temperature, the contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. The obtained mixture was purified by silica gel column chromatography (developing solvent: hexane) to obtain the compound of the above formula (1-207). The yield was 4.14 g and the yield was 82.4%.
化合物之鑑定係使用1H-NMR進行。 The identification of the compounds was carried out using 1 H-NMR.
1H-NMR、DMSO-d6、δ:1.98(s、6H)、7.14(s、2H)、7.35(d、J=1.8Hz、4H) 1 H-NMR, DMSO-d 6 , δ: 1.98 (s, 6H), 7.14 (s, 2H), 7.35 (d, J = 1.8 Hz, 4H)
接著,以下述所示方法合成出上述通式(1-95)所示化合物。 Next, the compound of the above formula (1-95) was synthesized by the method shown below.
於備有攪拌件並經氬置換之100mL舒倫克管中裝入上述通式(1-196)所示化合物(1.65g,6.0mmol)、上述通式(1-207)所示化合物(0.753g,3.0mmol)、乙酸鈀(27mg,0.12mmol)、甲苯(40mL)、三第三丁基膦(24mg,0.12mmol)及第三丁氧基鉀(0.673g、6.0mmol)並密閉後,於100℃下攪拌10小時。 The compound represented by the above formula (1-196) (1.65 g, 6.0 mmol) and the compound of the above formula (1-207) (0.753) were placed in a 100 mL Schlenk tube equipped with a stirring member and replaced with argon. g, 3.0 mmol), palladium acetate (27 mg, 0.12 mmol), toluene (40 mL), tri-tert-butylphosphine (24 mg, 0.12 mmol), and potassium t-butoxide (0.673 g, 6.0 mmol), and sealed. Stir at 100 ° C for 10 hours.
之後,將反應容器放冷到室溫附近,打開蓋子並 於其中裝水(40mL)。將內容物移到分液漏斗,使有機相與水相分離後,去除水相並進一步水洗有機相。以硫酸鈉使有機相乾燥。之後,藉由過濾去除硫酸鈉,濃縮有機相。以二氧化矽凝膠管柱層析法(展開溶劑:己烷/二氯甲烷=3/1)純化濃縮所得混合物,獲得目的之上述通式(1-95)所示化合物。產量為1.85g,產率為84.6%。 After that, let the reaction vessel cool to near room temperature, open the lid and Water (40 mL) was placed therein. The contents were transferred to a separatory funnel to separate the organic phase from the aqueous phase, the aqueous phase was removed and the organic phase was further washed with water. The organic phase was dried over sodium sulfate. Thereafter, sodium sulfate was removed by filtration, and the organic phase was concentrated. The obtained mixture was concentrated and purified by silica gel column chromatography (developing solvent: hexane/dichloromethane = 3/1) to obtain the compound of the above formula (1-95). The yield was 1.85 g and the yield was 84.6%.
化合物之鑑定係使用1H-NMR進行。 The identification of the compounds was carried out using 1 H-NMR.
1H-NMR、DMSO-d6、δ:1.88(s、6H)、6.59(d、J=2.7Hz、2H)、6.85(dd、J=2.3Hz、8.2Hz、2H)、6.92(d、J=7.3Hz、4H)、6.98(t、J=7.3Hz、2H)、7.13(d、J=8.2Hz、2H)、7.21-7.25(m、6H)、7.45-7.52(m、6H)、7.86(dd、J=1.8Hz、6.9Hz、2H)、8.19(d、J=7.8Hz、2H)、8.36(dd、J=1.4Hz、7.3Hz、2H) 1 H-NMR, DMSO-d 6 , δ: 1.88 (s, 6H), 6.59 (d, J = 2.7 Hz, 2H), 6.85 (dd, J = 2.3 Hz, 8.2 Hz, 2H), 6.92 (d, J=7.3 Hz, 4H), 6.98 (t, J=7.3 Hz, 2H), 7.13 (d, J=8.2 Hz, 2H), 7.21-7.25 (m, 6H), 7.45-7.52 (m, 6H), 7.86 (dd, J = 1.8 Hz, 6.9 Hz, 2H), 8.19 (d, J = 7.8 Hz, 2H), 8.36 (dd, J = 1.4 Hz, 7.3 Hz, 2H)
(合成例6) (Synthesis Example 6)
以下述所示方法合成出通式(2-85)所示化合物。 The compound of the formula (2-85) was synthesized by the method shown below.
(二苯基胺體之合成) (synthesis of diphenylamine)
以下述所示方法合成出上述通式(2-198)所示二苯基胺體。 The diphenylamine represented by the above formula (2-198) was synthesized by the method shown below.
於備有攪拌件之30mL二口燒瓶中裝入上述通式(2-197)所示亞硝苯(0.46g,4.3mmol,1.0eq,分子量107.11)與氯化銅(0.43g,4.3mmol,1.0eq),進行氮置換後添加無水N,N-二甲基甲醯胺(5.3mL),於油浴溫度55℃下加熱攪拌40分鐘。接著,添加上述通式(2-196)所示4-二苯并呋喃硼酸(1.00g,4.7mmol,1.1eq),進行氮置換,再以同溫度攪拌4.5小時。 A 30 mL two-necked flask equipped with a stirring member was charged with nitrosobenzene (0.46 g, 4.3 mmol, 1.0 eq, molecular weight 107.11) represented by the above formula (2-197) and copper chloride (0.43 g, 4.3 mmol, 1.0 eq), after replacement with nitrogen, anhydrous N,N-dimethylformamide (5.3 mL) was added at an oil bath temperature of 55 ° C. Stir under heating for 40 minutes. Next, 4-dibenzofuran boronic acid (1.00 g, 4.7 mmol, 1.1 eq) represented by the above formula (2-196) was added, and the mixture was replaced with nitrogen, and stirred at the same temperature for 4.5 hours.
使反應液冷卻到室溫,添加水與二乙醚使水層與有機層分離,進一步以二乙醚萃取。接著,合併全部之有機層,使用無水硫酸鎂脫水。之後,過濾去除無水硫酸鎂,減壓餾除濾液中之溶劑,獲得含有目的物之殘渣。 The reaction solution was cooled to room temperature, and water and diethyl ether were added, and the aqueous layer was separated from the organic layer, and further extracted with diethyl ether. Next, all the organic layers were combined and dehydrated using anhydrous magnesium sulfate. Thereafter, anhydrous magnesium sulfate was removed by filtration, and the solvent in the filtrate was distilled off under reduced pressure to obtain a residue containing the title compound.
以二氧化矽凝膠層析法(展開溶劑:二乙醚/己烷=1/4)純化所得殘渣,獲得淡黃色固體0.66g。 The residue was purified by silica gel chromatography (yield: diethyl ether / hexane = 1/4) to afford 0.66 g of pale yellow solid.
以NMR調查所得淡黃色固體,結果含有許多雜質。因此,以下述所示方法進行淡黃色固体之再純化。即,一邊以45℃之溫浴來加熱淡黃色固體,一邊溶解於二乙醚(39mL)後,室溫攪拌下滴定己烷(50mL)後,於冰箱放製一晚以使固體析出。接著,吸引過濾已析出之固體,獲得白色固體0.07g。所得白色固體以NMR調查,結果為雜質。 The pale yellow solid obtained was investigated by NMR and found to contain many impurities. Therefore, re-purification of the pale yellow solid was carried out in the manner shown below. Specifically, the mixture was dissolved in diethyl ether (39 mL) while heating to a pale yellow solid in a warm bath of 45 ° C, and then hexane (50 mL) was stirred under stirring at room temperature, and then allowed to stand overnight in a refrigerator to precipitate a solid. Then, the precipitated solid was suction-filtered to obtain 0.07 g of a white solid. The white solid obtained was investigated by NMR and found to be an impurity.
此外,將已去除白色固體之濾液中所含的溶劑減壓餾除,一邊以60℃之溫浴加熱,一邊以己烷(20mL)溶解,於室溫下攪拌使固體析出。之後,吸引過濾已析出之固體,獲得白色固體0.33g。以NMR調查此白色固體,結果雜質仍未完全去掉。 In addition, the solvent contained in the filtrate from which the white solid was removed was distilled off under reduced pressure, and the mixture was dissolved in hexane (20 mL) while heating in a warm bath at 60 ° C, and the mixture was stirred at room temperature to precipitate a solid. Thereafter, the precipitated solid was suction-filtered to obtain 0.33 g of a white solid. The white solid was investigated by NMR, and the impurities were not completely removed.
因此,以二氧化矽凝膠層析法(展開溶劑:二氯甲烷/己烷=1/9)進行純化,而獲得目的物之上述通式(2-198)所示二苯基胺體之白色固體0.27g(1.1mmol,產率25%)。 Therefore, it is purified by cerium oxide gel chromatography (developing solvent: dichloromethane/hexane = 1/9) to obtain a diphenylamine represented by the above formula (2-198) of the object. White solid 0.27 g (1.1 mmol, yield 25%).
(有機EL用呋喃衍生物之合成) (Synthesis of Furan Derivatives for Organic EL)
以下述所示方法合成出上述通式(2-85)所示化合物。 The compound of the above formula (2-85) was synthesized by the method shown below.
於容量50mL之茄形燒瓶中裝入上述方法製得之通式(2-198)所示二苯基胺體(0.52g,2.0mmol,3.2eq)、上述通式(2-199)所示4,4’-二碘-2,2’-二甲基聯苯(0.27g,0.63mmol,1.0eq,分子量434.05)、乙酸鈀(II)(0.01g,0.05mmol,0.07eq)、三第三丁基膦(0.030mL,0.13mmol,0.20eq)及第三丁氧基鉀(0.28g,2.5mmol,4.0eq),進行5次減壓氮置換。接著,於茄形燒瓶中添加無水甲苯(12mL),於油浴溫度100℃下加熱攪拌3小時獲得反應液。其後,以薄層層析法(TLC)確認原料已從反應液消失。 The diphenylamine represented by the above formula (2-198) (0.52 g, 2.0 mmol, 3.2 eq) obtained by the above method was placed in an eggplant-shaped flask having a capacity of 50 mL, and the above formula (2-199) was shown. 4,4'-diiodo-2,2'-dimethylbiphenyl (0.27 g, 0.63 mmol, 1.0 eq, molecular weight 434.05), palladium (II) acetate (0.01 g, 0.05 mmol, 0.07 eq), three Tributylphosphine (0.030 mL, 0.13 mmol, 0.20 eq) and potassium t-butoxide (0.28 g, 2.5 mmol, 4.0 eq) were subjected to a reduced pressure nitrogen exchange for five times. Next, anhydrous toluene (12 mL) was added to the eggplant-shaped flask, and the mixture was heated and stirred at an oil bath temperature of 100 ° C for 3 hours to obtain a reaction liquid. Thereafter, it was confirmed by thin layer chromatography (TLC) that the starting material had disappeared from the reaction liquid.
接著,將反應液冷卻到室溫,添加水(50mL)與二乙醚(50mL)稀釋,進行矽藻土過濾。以二乙醚(50mL)萃取過濾後所得濾液2次,合併全部之有機層,使用無水硫酸鎂 脫水。之後,過濾去除無水硫酸鎂,減壓餾除濾液中之溶劑。結果,以茶綠色非晶質粗體之形式獲得0.66g含有目的物之殘渣。 Next, the reaction liquid was cooled to room temperature, and water (50 mL) was added and diluted with diethyl ether (50 mL), and filtered over Celite. The filtrate was extracted twice with diethyl ether (50 mL) and filtered. Dehydration. Thereafter, anhydrous magnesium sulfate was removed by filtration, and the solvent in the filtrate was distilled off under reduced pressure. As a result, 0.66 g of a residue containing the objective substance was obtained in the form of tea green amorphous crude.
將如此製得之粗體以二氧化矽凝膠層析法(展開溶劑:二氯甲烷/己烷=1/4)純化,製得目的物之上述通式(2-85)所示化合物之白色固體0.35g(0.50mmol,產率79%)。 The crude product thus obtained is purified by cerium oxide gel chromatography (developing solvent: dichloromethane/hexane = 1/4) to obtain the compound of the above formula (2-85). White solid 0.35 g (0.50 mmol, yield 79%).
上述通式(2-85)所示化合物之鑑定係使用1H-NMR進行。 The identification of the compound represented by the above formula (2-85) was carried out using 1 H-NMR.
1H-NMR(500MHz DMSO-d6)、δ:8.16(dd,2H,J=7.5Hz,0.5Hz)、8.00(dd,2H,J=7.5Hz,1.0Hz)、7.51(d,2H,J=8.0Hz)、7.47(dt、2H、J=7.5Hz、1.5Hz)、7.43-7.38(m,4H)、7.31-7.27(m,6H)、7.02(dd、8H,J=8.0Hz,5.0Hz)、6.95(d,2H,J=2.5Hz)、6.83(dd,2H,J=8.0Hz,2.5Hz)、1.95(s,6H)。 1 H-NMR (500 MHz DMSO-d 6 ), δ: 8.16 (dd, 2H, J = 7.5 Hz, 0.5 Hz), 8.00 (dd, 2H, J = 7.5 Hz, 1.0 Hz), 7.51 (d, 2H, J = 8.0 Hz), 7.47 (dt, 2H, J = 7.5 Hz, 1.5 Hz), 7.43 - 7.38 (m, 4H), 7.31 - 7.27 (m, 6H), 7.02 (dd, 8H, J = 8.0 Hz, 5.0 Hz), 6.95 (d, 2H, J = 2.5 Hz), 6.83 (dd, 2H, J = 8.0 Hz, 2.5 Hz), 1.95 (s, 6H).
「電洞輸送層材料」 "Cave transport layer material"
製作由上述通式(2-85)所示化合物構成的薄膜(實驗例6),該化合物係使用上述(合成例6)合成者。此外,製作由上述通式(1-83)所示化合物構成的薄膜(實驗例1),該化合物係使用上述(合成例1)合成者。又,製作出由上述通式(5)所示DBTPB構成之薄膜。 A film composed of the compound represented by the above formula (2-85) (Experimental Example 6) was produced, and the compound was synthesized using the above (Synthesis Example 6). Further, a film composed of the compound represented by the above formula (1-83) (Experimental Example 1) was produced, and the compound was synthesized using the above (Synthesis Example 1). Further, a film composed of DBTPB represented by the above formula (5) was produced.
接著,針對實驗例1、實驗例6及由DBTPB構成之薄膜,分別使用HORIBA社製之FluoroMax-4測定波長300nm之激發光源,於室溫下以不設定遅延等之方式測定全時間區域之發光光譜。室溫下可觀測螢光發光。因此,可從室溫下之發光光譜測定結果,獲得有關各薄膜之激發單態(S1)(帶 隙)能量之知識見解。茲將其結果示於圖3。 Next, with respect to the film of the experimental example 1, the experimental example 6, and the DBTPB, the excitation light source of the wavelength of 300 nm was measured using the FluoroMax-4 by HORIBA, and the luminescence of the full-time area was measured at room temperature by setting without delay. spectrum. Fluorescence can be observed at room temperature. Therefore, knowledge of the excitation singlet (S 1 ) (band gap) energy of each film can be obtained from the results of luminescence spectroscopy at room temperature. The results are shown in Figure 3.
圖3為圖表,其顯示實驗例1之薄膜、實驗例6之薄膜及DBTPB之薄膜在室溫下之發光光譜測定結果。 Fig. 3 is a graph showing the results of luminescence spectrometry of a film of Experimental Example 1, a film of Experimental Example 6, and a film of DBTPB at room temperature.
如圖3所示,實驗例6相較於實驗例1及DBTPB呈現廣帶隙。 As shown in FIG. 3, Experimental Example 6 exhibited a broad band gap compared to Experimental Example 1 and DBTPB.
吾人推測如下:由上述通式(2-85)所示化合物構成之實驗例6及由通式(1-83)所示化合物構成之實驗例1為分子結構中心骨架之二胺基聯苯基已因甲基而崩解其平面性,π共軛系被截斷,而變得較DBTPB更為廣帶隙。 It is presumed that the experimental example 6 composed of the compound represented by the above formula (2-85) and the experimental example 1 composed of the compound represented by the general formula (1-83) are diaminobiphenyl groups of the central skeleton of the molecular structure. The planarity has been disintegrated by the methyl group, and the π-conjugated system is cut off to become wider than the DBTPB.
此外,吾人推測,相較於二苯并噻吩,二苯并呋喃之π共軛系擴增更小,因此,相較於在2個二苯并噻吩之間配置有二胺基聯苯基之化合物所構成的實驗例1,實驗例6變得更廣帶隙。 In addition, it is speculated that the π-conjugated dibenzofuran has a smaller amplification than the dibenzothiophene, and therefore, a diaminobiphenyl group is disposed between the two dibenzothiophenes. In Experimental Example 1 in which the compound was composed, Experimental Example 6 became a wider band gap.
此外,為了探討帶隙較大之材料結構,針對實驗例1之化合物、實驗例6之化合物及DBTPB,藉由使用Gaussian 03程式之分子軌域計算來推定帶隙。 Further, in order to investigate the material structure having a large band gap, the band gap was estimated by using the molecular orbital calculation of the Gaussian 03 program for the compound of Experimental Example 1, the compound of Experimental Example 6, and DBTPB.
結果如表1所示,實驗例6之化合物相較於DBTPB、實驗例1之化合物帶隙變大。 As a result, as shown in Table 1, the compound of Experimental Example 6 had a larger band gap than the compound of DBTPB and Experimental Example 1.
此外,針對實驗例1、實驗例6及由DBTPB所構成之薄膜,分別使用HORIBA社製之FluoroMax-4,並使用波 長300nm之激發光源,於77K之低溫下測定發光光譜。於低溫下可觀測磷光發光。因此,可由低溫下之發光光譜測定結果,獲得有關各薄膜之激發三重態(T1)能量的知識見解。此外,為了去除螢光發光成分來觀測磷光光譜,激發光照射後設置200毫秒之延遲,測定低溫下之發光光譜。茲將結果示於圖4。 Further, for the films of Experimental Example 1, Experimental Example 6, and DBTPB, FluoroMax-4 manufactured by HORIBA Co., Ltd., and an excitation light source having a wavelength of 300 nm were used, and the luminescence spectrum was measured at a low temperature of 77K. Phosphorescence can be observed at low temperatures. Therefore, knowledge of the excitation triplet (T 1 ) energy of each film can be obtained from the results of luminescence spectroscopy at low temperatures. Further, in order to remove the fluorescent luminescent component, the phosphorescence spectrum was observed, and after the excitation light was irradiated, a retardation of 200 msec was set, and the luminescence spectrum at a low temperature was measured. The results are shown in Figure 4.
又,製作由綠色磷光材料之上述通式(162)所示Ir(mppy)3構成的薄膜。接著,針對由Ir(mppy)3構成之薄膜,使用HORIBA社製之FluoroMax-4,並使用波長300nm之激發光源,於室溫下不設置延遲,測定全時間區域之發光光譜。茲將結果示於圖4。 Further, a film composed of Ir(mppy) 3 represented by the above formula (162) of a green phosphor material was produced. Next, for the film composed of Ir(mppy) 3 , FluoroMax-4 manufactured by HORIBA Co., Ltd. was used, and an excitation light source having a wavelength of 300 nm was used, and no luminescence was set at room temperature, and the luminescence spectrum of the entire time region was measured. The results are shown in Figure 4.
圖4為圖表,顯示實驗例1之薄膜、實驗例6之薄膜及DBTPB薄膜在低溫下之發光光譜測定結果以及由Ir(mppy)3構成之薄膜在室溫下之發光光譜測定結果。 4 is a graph showing the results of measurement of the luminescence spectrum of the film of Experimental Example 1, the film of Experimental Example 6, and the DBTPB film at a low temperature, and the measurement results of the luminescence spectrum of the film composed of Ir(mppy) 3 at room temperature.
如圖4所示,實驗例6之磷光光譜尖峰相較於DBTPB、實驗例1及Ir(mppy)3更位在短波長側。亦即,實驗例6之激發三重態(T1)能量較DBTPB、實驗例1及Ir(mppy)3更大。另,如圖4之箭頭所示,DBTPB之磷光光譜尖峰與Ir(mppy)3為同程度。 As shown in FIG. 4, the phosphorescence spectral peak of Experimental Example 6 was on the shorter wavelength side than DBTPB, Experimental Example 1, and Ir(mppy) 3 . That is, the excited triplet state (T 1 ) energy of Experimental Example 6 was larger than that of DBTPB, Experimental Example 1, and Ir(mppy) 3 . Further, as indicated by the arrow in Fig. 4, the phosphorescence spectral peak of DBTPB is the same as that of Ir(mppy) 3 .
從封入能量之觀點來看,電洞輸送層材料之T1能量宜較客體材料之T1能量更大。從圖4所示結果可知,由實驗例1及實驗例6之化合物構成的電洞輸送層在客體材料使用Ir(mppy)3時,可封入激發三重態(T1)之能量。因此,吾人推定,可藉由兼具實驗例1及/或實驗例6之化合物所構成 的電洞輸送層以及客體材料使用Ir(mppy)3之發光層,而獲得發光效率高之有機EL元件。 From the viewpoint of energy enclosed in view of hole transport layer material should be greater than the T 1 energy T 1 energy of the guest material. As is apparent from the results shown in Fig. 4, the hole transporting layer composed of the compounds of Experimental Example 1 and Experimental Example 6 can encapsulate the energy of the excited triplet state (T 1 ) when Ir(mppy) 3 is used as the guest material. Therefore, it is assumed that an organic EL device having high luminous efficiency can be obtained by using a light-emitting layer of Ir(mppy) 3 for a hole transport layer composed of a compound of Experimental Example 1 and/or Experimental Example 6 and a guest material. .
「有機EL元件」 "Organic EL device"
(實驗例2) (Experimental Example 2)
利用習知方法,依序於基板上形成:由ITO(氧化銦錫)構成之第1電極(陽極);由日產化學製之SHI2520-b10SI構成且厚度為30nm之電洞注入層;由下述通式(208)所示α-NPD構成且厚度為20nm之第2電洞輸送層;由上述通式(1-83)所示化合物構成且厚度為10nm之電洞輸送層;客體材料使用上述通式(162)所示Ir(mppy)3,主體材料使用上述通式(132)所示Bepp2,並令發光層6中之客體材料含量為6重量%且厚度35nm之發光層;由下述通式(209)所示TPBI構成且厚度為40nm之電子輸送層;由LiF膜構成且厚度1nm之電子注入層;由Al膜構成之第2電極(陰極)。 a first electrode (anode) made of ITO (indium tin oxide) and a hole injection layer made of SHI2520-b10SI manufactured by Nissan Chemical Co., Ltd. and having a thickness of 30 nm are formed on the substrate by a conventional method; a second hole transporting layer composed of α-NPD represented by the formula (208) and having a thickness of 20 nm; a hole transporting layer composed of the compound represented by the above formula (1-83) and having a thickness of 10 nm; Ir(mppy) 3 represented by the formula (162), a host material using Bepp2 represented by the above formula (132), and a light-emitting layer having a guest material content of 6 wt% and a thickness of 35 nm in the light-emitting layer 6; An electron transporting layer composed of TPBI having a thickness of 40 nm and having a thickness of 1 nm and a second electrode (cathode) composed of an Al film.
(實驗例3) (Experimental Example 3)
除了將電洞輸送層之材料更換為上述通式(5)所示DBTPB以外,與實驗例2同樣地形成實驗例3之有機EL元件。 The organic EL device of Experimental Example 3 was formed in the same manner as in Experimental Example 2 except that the material of the hole transport layer was changed to DBTPB represented by the above formula (5).
針對所得實驗例2及實驗例3之有機EL元件調查電流密度與外部量子效率之關係。結果示於圖5。 The relationship between the current density and the external quantum efficiency was investigated for the organic EL devices of Experimental Example 2 and Experimental Example 3. The results are shown in Figure 5.
如圖5所示,具有由上述通式(1-83)所示化合物構成之電洞輸送層的實驗例2較具有由DBTPB構成之電洞輸送層的實驗例3外部量子效率整體提高。這可想見是因為,實驗例2相較於實驗例3,電洞輸送層之帶隙能量及激發三重態(T1)能量較大所致。 As shown in Fig. 5, in Experimental Example 2 having a hole transporting layer composed of the compound represented by the above formula (1-83), the external quantum efficiency of Experimental Example 3 having a hole transporting layer composed of DBTPB was improved as a whole. This is conceivable because, in Experimental Example 2, compared with Experimental Example 3, the band gap energy of the hole transport layer and the excited triplet state (T 1 ) energy were large.
此外,就所得實驗例2及實驗例3之有機EL元件而言,如以下所示般調查元件之驅動壽命。亦即,將電流值設定成初期亮度為1000cd/m2,並觀測在一定電流下之亮度衰減。其結果示於圖6。 Further, in the organic EL devices of Experimental Example 2 and Experimental Example 3, the driving life of the device was investigated as follows. That is, the current value was set to an initial luminance of 1000 cd/m 2 , and the luminance attenuation at a constant current was observed. The result is shown in Fig. 6.
圖6為圖表,顯示實驗例2及實驗例3之有機EL元件的驅動時間與亮度之關係。圖6所示實驗例2衰減到950cd/m2之 時間為200小時。與此相對地,實驗例3衰減到同樣亮度之時間為84小時。如此這般,本發明之化合物不僅可高效率化,對於長壽命化亦有效。 Fig. 6 is a graph showing the relationship between the driving time and the luminance of the organic EL elements of Experimental Example 2 and Experimental Example 3. The experimental example 2 shown in Fig. 6 was attenuated to 950 cd/m 2 for 200 hours. On the other hand, the time during which Experimental Example 3 was attenuated to the same brightness was 84 hours. In this way, the compound of the present invention is not only highly efficient but also effective for long life.
(實驗例4) (Experimental Example 4)
利用習知方法,在基板上依序設置:由ITO(氧化銦錫)構成的第1電極(陽極);由通式(131)所示PEDOT:PSS構成且厚度35nm之電洞注入層;由通式(208)所示α-NPD構成且厚度20nm之第2電洞輸送層;由上述通式(1-107)所示化合物構成且厚度10nm之電洞輸送層;客體材料使用上述通式(162)所示Ir(mppy)3,主體材料使用上述通式(132)所示Bepp2,並令發光層6中之客體材料含量為6重量%且厚度為35nm之發光層;由上述通式(209)所示TPBI構成且厚度40nm之電子輸送層;由LiF膜構成且厚度1nm之電子注入層;及,由Al膜構成之第2電極(陰極)。 By using a conventional method, a first electrode (anode) composed of ITO (indium tin oxide), a hole injection layer composed of PEDOT:PSS represented by the general formula (131) and having a thickness of 35 nm is sequentially disposed on the substrate; a second hole transport layer composed of α-NPD represented by the general formula (208) and having a thickness of 20 nm; a hole transport layer composed of a compound represented by the above formula (1-107) and having a thickness of 10 nm; the guest material using the above formula (162) Ir (mppy) 3 , the host material uses Bepp2 represented by the above formula (132), and the light-emitting layer 6 has a guest material content of 6 wt% and a thickness of 35 nm; (209) An electron transporting layer having a thickness of 40 nm and having a TPBI structure; an electron injecting layer made of a LiF film and having a thickness of 1 nm; and a second electrode (cathode) made of an Al film.
(實驗例5) (Experimental Example 5)
除了將電洞輸送層之材料取代為上述通式(5)所示DBTPB之外,與實驗例4同樣地形成實驗例5之有機EL元件。 The organic EL device of Experimental Example 5 was formed in the same manner as in Experimental Example 4 except that the material of the hole transport layer was replaced by DBTPB represented by the above formula (5).
針對所得實驗例4及實驗例5之有機EL元件調查電流密度與外部量子效率之關係。結果示於圖7。 The relationship between the current density and the external quantum efficiency was investigated for the organic EL devices of Experimental Example 4 and Experimental Example 5. The results are shown in Figure 7.
如圖7所示,具有由上述通式(1-107)所示化合物構成之電洞輸送層的實驗例4相較於具有由DBTPB構成之電洞輸送層的實驗例5,外部量子效率整體提高。這可想見是因為,實驗例4相較於實驗例5,電洞輸送層之帶隙能量及激 發三重態(T1)之能量較大所致。 As shown in Fig. 7, Experimental Example 4 having a hole transporting layer composed of the compound represented by the above formula (1-107) was compared with Experimental Example 5 having a hole transporting layer composed of DBTPB, and the external quantum efficiency was overall. improve. This is conceivable because Experimental Example 4 is caused by the band gap energy of the hole transport layer and the energy of the excited triplet state (T 1 ) as compared with the experimental example 5.
此外,針對所得實驗例4及實驗例5之有機EL元件,與實驗例2及實驗例3同樣地調查元件之驅動壽命。其結果示於圖8。 Further, with respect to the organic EL devices of Experimental Example 4 and Experimental Example 5, the driving life of the device was examined in the same manner as in Experimental Example 2 and Experimental Example 3. The result is shown in Fig. 8.
圖8為圖表,顯示實驗例4及實驗例5之有機EL元件的驅動時間與亮度之關係。圖8所示實驗例4至衰減到800cd/m2之時間為108小時。相對於此,實驗例5衰減到相同亮度之時間為57小時。如此這般,本發明之化合物不僅可高效率化,對於長壽命化亦有效。 Fig. 8 is a graph showing the relationship between the driving time and the luminance of the organic EL device of Experimental Example 4 and Experimental Example 5. The time from the experimental example 4 shown in Fig. 8 to the attenuation to 800 cd/m 2 was 108 hours. On the other hand, the time during which Experimental Example 5 was attenuated to the same brightness was 57 hours. In this way, the compound of the present invention is not only highly efficient but also effective for long life.
「有機EL元件」 "Organic EL device"
(實驗例7) (Experimental Example 7)
以習知方法依序在基板上形成:由ITO(氧化銦錫)構成之第1電極(陽極);由PEDOT:PSS構成且厚度35nm之電洞注入層;由上述通式(208)所示α-NPD構成且厚度10nm之第2電洞輸送層;由上述通式(2-85)所示化合物構成且厚度10nm之電洞輸送層;客體材料使用上述通式(162)所示Ir(mppy)3,主體材料使用上述通式(132)所示Bepp2,並令發光層6中之客體材料含量為6重量%且厚度為35nm之發光層;由上述通式(209)所示TPBI構成且厚度40nm之電子輸送層;由LiF膜構成且厚度為1nm之電子注入層;及,由Al膜構成之第2電極(陰極)。 Forming on the substrate in sequence by a conventional method: a first electrode (anode) composed of ITO (indium tin oxide); a hole injection layer composed of PEDOT:PSS and having a thickness of 35 nm; as shown by the above formula (208) a second hole transport layer composed of α-NPD and having a thickness of 10 nm; a hole transport layer composed of a compound represented by the above formula (2-85) and having a thickness of 10 nm; and a guest material using Ir as shown in the above formula (162); Mppy) 3 , the host material uses Bepp2 represented by the above formula (132), and the light-emitting layer 6 has a guest material content of 6 wt% and a thickness of 35 nm; the TPBI represented by the above formula (209) An electron transport layer having a thickness of 40 nm; an electron injection layer made of a LiF film and having a thickness of 1 nm; and a second electrode (cathode) made of an Al film.
(實驗例8) (Experimental Example 8)
除了將電洞輸送層之材料取代為上述通式(5)所示DBTPB之外,與實驗例7同樣地形成實驗例8之有機EL元 件。 The organic EL element of Experimental Example 8 was formed in the same manner as in Experimental Example 7, except that the material of the hole transport layer was replaced by DBTPB represented by the above formula (5). Pieces.
針對所得實驗例7及實驗例8之有機EL元件調查電流密度與外部量子效率之關係。其結果示於圖9。 The relationship between the current density and the external quantum efficiency was investigated for the organic EL devices of Experimental Example 7 and Experimental Example 8. The result is shown in Fig. 9.
如圖9所示,具有由上述通式(2-85)所示化合物構成之電洞輸送層的實驗例7相較於具有由DBTPB構成之電洞輸送層的實驗例8,外部量子效率整體提高。這可想見是因為,實驗例7相較於實驗例8,電洞輸送層之帶隙能量及激發三重態(T1)能量較大所致。 As shown in Fig. 9, Experimental Example 7 having a hole transporting layer composed of the compound represented by the above formula (2-85) was compared with Experimental Example 8 having a hole transporting layer composed of DBTPB, and the external quantum efficiency was overall. improve. This is conceivable because Experimental Example 7 is caused by a larger band gap energy and an excited triplet state (T 1 ) energy of the hole transport layer than in Experimental Example 8.
1‧‧‧有機EL元件(有機電致發光元件) 1‧‧‧Organic EL elements (organic electroluminescent elements)
2‧‧‧基板 2‧‧‧Substrate
3‧‧‧第2電極 3‧‧‧2nd electrode
4‧‧‧電子注入層 4‧‧‧Electronic injection layer
5‧‧‧電子輸送層 5‧‧‧Electronic transport layer
6‧‧‧發光層 6‧‧‧Lighting layer
7‧‧‧電洞輸送層 7‧‧‧ hole transport layer
8‧‧‧電洞注入層 8‧‧‧ hole injection layer
9‧‧‧第1電極 9‧‧‧1st electrode
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