TW201505476A - Ceramics semiconductor capable of increasing peripheral superoxide ions after heating - Google Patents

Ceramics semiconductor capable of increasing peripheral superoxide ions after heating Download PDF

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TW201505476A
TW201505476A TW102125928A TW102125928A TW201505476A TW 201505476 A TW201505476 A TW 201505476A TW 102125928 A TW102125928 A TW 102125928A TW 102125928 A TW102125928 A TW 102125928A TW 201505476 A TW201505476 A TW 201505476A
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ceramic semiconductor
superoxide
peripheral
semiconductor
enhancing
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TW102125928A
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Chinese (zh)
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TWI482526B (en
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chong-tai Zhang
Jia-hao ZHANG
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chong-tai Zhang
Jia-hao ZHANG
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Abstract

The present invention provides a ceramics semiconductor capable of increasing peripheral superoxide (O.sub.2.supra.-) ions after heating and air ventilation. The ceramics semiconductor is doped with oxide material capable of enhancing space charge effect during shaping. The ceramics semiconductor is provided with a plurality of penetrated through holes. The ceramics semiconductor generates current and heat after electrifying so that outer layer electrons of the ceramic semiconductor come off and stay in the through holes of the ceramics semiconductor, and furthermore an electron cloud is accumulated and formed at the through hole. After air passes through the through holes, oxygen within air collides and then combines with the electrons to form superoxide ions (O.sub.2.supra.-), thereby increasing the amount of peripheral superoxide ions (O.sub.2.supra.-).

Description

發熱後可增加週邊超氧根離子之陶瓷半導體Ceramic semiconductors that increase peripheral superoxide ions after heating

　　本創作係關於一種發熱後空氣經過可增加週邊超氧根離子之陶瓷半導體，尤指一種陶瓷半導體成型時摻加有可增強空間電荷效應之氧化物材料，且該陶瓷半導體具有貫穿之通孔，俾該陶瓷半導體通電後，即產生電流及熱，造成該陶瓷半導體外層電子脫離，在通孔處累積形成電子雲，空氣經過通孔後，空氣中之氧與電子衝撞後再結合，即形成超氧根離子，藉此提升超氧根離子量者。
The present invention relates to a ceramic semiconductor which can increase the peripheral superoxide ions after the heating, in particular, a ceramic semiconductor is formed by adding an oxide material capable of enhancing the space charge effect, and the ceramic semiconductor has a through hole. After the ceramic semiconductor is energized, current and heat are generated, causing the outer layer of the ceramic semiconductor to be detached, and an electron cloud is formed at the through hole. After the air passes through the through hole, the oxygen in the air collides with the electron and then combines to form an ultra Oxygen ion, thereby increasing the amount of superoxide ions.

　　按，我們所呼吸的空氣中，氧佔體積21%，該氧是以O2 ()分子的游離狀態(free state)存在。該O2 ()分子係兩個氧原子共用一對電子，其中一個氧原子有一個未成對電子，所以，對電子有很大之親和力。當該O2 與電子(e)碰撞後再結合，即產生O2 +e→O2 - 或O2 +e→O+O- (超氧根離子)。該超氧根離子，其解離子及離子化所需能量為1.62~22.9ev(電子伏特)，化學活性極高，具殺菌、活化細胞及幫助傷口癒合等效果。發明人之前有台灣發明第I337507號【ＰＴＣ發熱器結構】、新型第041331號【PTC發熱器之構造(一)】及其追加一、新型第053055號【PTC發熱器之構造(三)】及其追加二等有關PTC發熱器之相關專利核准，有鑑於超氧根離子具有上述功效，乃針對PTC發熱器(即陶瓷半導體)通電後會產生熱之特性加以再發明，俾該陶瓷半導體不僅能發熱，復能產生超氧根離子者。
Press, in the air we breathe, oxygen accounts for 21% of the volume, and the oxygen is O 2 ( The free state of the molecule exists. The O 2 ( The two oxygen atoms of the molecular system share a pair of electrons, one of which has an unpaired electron, so it has a great affinity for electrons. When the O 2 collides with the electron (e) and then combines, O 2 + e → O 2 - or O 2 + e → O + O - (superoxide ion) is produced. The superoxide ion has an energy of 1.62~22.9 ev (electron volt) for deionization and ionization, and has high chemical activity, and has the effects of sterilizing, activating cells and helping wound healing. The inventor previously had Taiwan invention No. I337507 [PTC heater structure], new type 041331 [PTC heater structure (1)] and its additional one, new type 053055 [PTC heater structure (3)] and It adds the second-class patent approval for PTC heaters. In view of the above-mentioned effects of superoxide ions, it is re-invented for the characteristics of heat generated after the PTC heater (ie, ceramic semiconductor) is energized, so that the ceramic semiconductor can not only Heat, regenerative energy to produce superoxide ions.

　　爰是，本發明之目的係在提供一種可增加週邊超氧根離子量之陶瓷半導體。
　　為達成上述目的，該陶瓷半導體於成型時係摻加有可增強空間電荷效應之氧化物材料，且該陶瓷半導體具有複數個貫穿之通孔。該陶瓷半導體通電後，即產生電流及熱，造成該陶瓷半導體外層電子脫離，並在該通孔累積形成電子雲，空氣經過通孔後，空氣中之氧與電子衝撞後再結合，即形成超氧根離子，藉此提升超氧根離子量者。
Accordingly, it is an object of the present invention to provide a ceramic semiconductor which can increase the amount of peripheral superoxide ions.
In order to achieve the above object, the ceramic semiconductor is doped with an oxide material capable of enhancing a space charge effect, and the ceramic semiconductor has a plurality of through holes. After the ceramic semiconductor is energized, current and heat are generated, causing the outer layer of the ceramic semiconductor to be detached, and an electron cloud is formed in the through hole. After the air passes through the through hole, the oxygen in the air collides with the electron and then combines to form an ultra Oxygen ion, thereby increasing the amount of superoxide ions.

10‧‧‧陶瓷半導體
11‧‧‧通孔
20‧‧‧風扇
10‧‧‧Ceramic Semiconductor
11‧‧‧through hole
20‧‧‧Fan

第一圖所示係本發明實施例單一陶瓷半導體立體圖
第二圖所示係本發明實施例多個陶瓷半導體組合立體圖
第三圖所示係本發明實施例之使用示意圖
1 is a perspective view of a single ceramic semiconductor according to an embodiment of the present invention. FIG. 2 is a perspective view showing a plurality of ceramic semiconductor combinations according to an embodiment of the present invention.

　　本發明為達成上述目的，所採用之技術手段及可達致之功效，茲舉以下較佳可行實施例配合附圖進行詳細說明。
　　請參閱第一、二圖所示，該陶瓷半導體10於成型時係摻加有可增強空間電荷效應之氧化物材料，該氧化物材料可使原子最外層的電子容易移動，如:TiO2 (二氧化鈦)、ZnO(氧化鋅)、WO3 (三氧化鎢)、Fe2 O3 (三氧化二鐵)、SrTiO3 (鈦酸鍶)…….等。該陶瓷半導體10具有複數個貫穿之通孔11，每個通孔11之孔徑以Φ1mm~2mm為佳。
　　當該陶瓷半導體10通電後，該可增強空間電荷效應之氧化物材料接受電流及熱後，會造成電子脫離，並滯留在通孔11，該電子累積的量一多便形成密度高之電子雲。如第三圖所示位在該陶瓷半導體10外所設置的風扇20吹向該陶瓷半導體10，空氣經過通孔11後，空氣中之氧(O2 )會與由該陶瓷半導體10脫離之電子衝撞之後再結合，如此便形成超氧根離子，俾該陶瓷半導體10通電後除發熱外，亦同時釋出超氧根離子(O2 +e→O2 - 或O2 +e→O+O- )。該陶瓷半導體10通電後釋出超氧根離子，該超氧根離子因化學活性極高，具殺菌、活化細胞及幫助傷口癒合等效果，致該陶瓷半導體10通電後使用，亦具有殺菌、活化細胞及幫助傷口癒合等功能。
　　其次，本發明亦可不設置風扇20，藉由驅動機構驅動該陶瓷半導體10走移，亦能臻至使空氣快速經過通孔11，使空氣中之氧(O2 )迅速與電子(e)衝撞再結合，一直快速釋出超氧根離子。
　　綜上所述，本發明確可達到預期之功能及目的，並且詳細說明能使熟於此技藝者得據以實施，然以上所舉之實施例僅用以說明本發明，舉凡所有等效結構之改變仍不脫離本發明之權利範疇。In order to achieve the above object, the technical means and the achievable effects of the present invention, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Referring to the first and second figures, the ceramic semiconductor 10 is formed by adding an oxide material capable of enhancing the space charge effect, and the oxide material can easily move electrons of the outermost layer of the atom, such as TiO 2 ( Titanium dioxide), ZnO (zinc oxide), WO 3 (tungsten trioxide), Fe 2 O 3 (ferric oxide), SrTiO 3 (barium titanate), and the like. The ceramic semiconductor 10 has a plurality of through holes 11 therethrough, and the diameter of each of the through holes 11 is preferably Φ1 mm to 2 mm.
When the ceramic semiconductor 10 is energized, the oxide material capable of enhancing the space charge effect receives the current and heat, causing the electrons to detach and stay in the through hole 11, and the electron accumulation amount is excessively formed to form a high density electron cloud. . As shown in the third figure, the fan 20 disposed outside the ceramic semiconductor 10 is blown toward the ceramic semiconductor 10. After the air passes through the through hole 11, the oxygen (O 2 ) in the air is separated from the electrons separated from the ceramic semiconductor 10. After the collision, the superoxide ions are formed, and after the ceramic semiconductor 10 is energized, in addition to the heat, the superoxide ions are simultaneously released (O 2 +e→O 2 - or O 2 +e→O+O). - ). The ceramic semiconductor 10 emits superoxide ions after being energized, and the superoxide ions have high chemical activity, and have the effects of sterilizing, activating cells and helping wound healing, so that the ceramic semiconductor 10 is used after being energized, and has sterilization and activation. Cells and functions that help wound healing.
Secondly, the present invention can also be configured not to provide the fan 20, and the driving mechanism drives the ceramic semiconductor 10 to move, and can also make the air quickly pass through the through hole 11, so that the oxygen (O 2 ) in the air quickly collides with the electron (e). Combined, the superoxide ions are released quickly.
In conclusion, the present invention can achieve the intended function and purpose, and the detailed description can be implemented by those skilled in the art, and the above embodiments are only used to illustrate the present invention, and all equivalent structures. Changes may still be made without departing from the scope of the invention.

 

10‧‧‧陶瓷半導體 10‧‧‧Ceramic Semiconductor

11‧‧‧通孔 11‧‧‧through hole

Claims (9)

一種發熱後可增加週邊超氧根離子之陶瓷半導體，該陶瓷半導體於成型時係摻加有可增強空間電荷效應之氧化物材料，且該陶瓷半導體具有一個以上貫穿之通孔；藉此，該陶瓷半導體通電後產生電流及熱，造成該陶瓷半導體外層電子脫離並留在通孔，且在通孔累積形成電子雲，空氣經過通孔後，空氣中之氧與電子衝撞後結合，形成超氧根離子，俾該陶瓷半導體可釋出超氧根離子者。a ceramic semiconductor capable of increasing peripheral superoxide ions after heating, the ceramic semiconductor being doped with an oxide material capable of enhancing a space charge effect, and the ceramic semiconductor has one or more through holes; thereby, When the ceramic semiconductor is energized, current and heat are generated, and the outer layer of the ceramic semiconductor is separated and left in the through hole, and an electron cloud is formed in the through hole. After the air passes through the through hole, the oxygen in the air collides with the electron to form superoxide. Root ion, the ceramic semiconductor can release superoxide ions. 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該可增強空間電荷效應之氧化物材料為TiO2 (二氧化鈦)。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the oxide material capable of enhancing the space charge effect is TiO 2 (titanium dioxide). 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該可增強空間電荷效應之氧化物材料為ZnO(氧化鋅)。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the oxide material capable of enhancing the space charge effect is ZnO (zinc oxide). 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該可增強空間電荷效應之氧化物材料為WO3 (三氧化鎢)。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the oxide material capable of enhancing the space charge effect is WO 3 (tungsten trioxide). 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該可增強空間電荷效應之氧化物材料為Fe2 O3 (三氧化二鐵)。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the oxide material capable of enhancing the space charge effect is Fe 2 O 3 (iron oxide). 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該可增強空間電荷效應之氧化物材料為SrTiO3 (鈦酸鍶)。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the oxide material capable of enhancing the space charge effect is SrTiO 3 (barium titanate). 如申請專利範圍第1項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該通孔之孔徑係為Φ1mm~2mm。The ceramic semiconductor of the peripheral superoxide ion can be increased after the heat generation as described in the first aspect of the patent application, wherein the aperture of the through hole is Φ1 mm~2 mm. 如申請專利範圍第1至7項任一項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該陶瓷半導體之外側係設置一風扇，該風扇的風係吹向該陶瓷半導體之通孔者。A ceramic semiconductor capable of increasing peripheral superoxide ions after heat generation according to any one of claims 1 to 7, wherein a fan is disposed on the outer side of the ceramic semiconductor, and the wind of the fan is blown toward the ceramic semiconductor Through hole. 如申請專利範圍第1至7項任一項所述之發熱後可增加週邊超氧根離子之陶瓷半導體，其中，該陶瓷半導體係受一驅動機構驅動而走移。A ceramic semiconductor capable of increasing peripheral superoxide ions after heating according to any one of claims 1 to 7, wherein the ceramic semiconductor is driven to move by a driving mechanism.
TW102125928A 2013-07-19 2013-07-19 Ceramics semiconductor capable of increasing peripheral superoxide ions after heating TW201505476A (en)

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