TW201503999A - Manufacturing method of polishing pad dresser of sapphire disc - Google Patents

Abstract

A manufacturing method of polishing pad dresser of sapphire disc comprises the following steps: providing a sapphire wafer having a specific axis direction; the specific axis direction being one of a axis direction, c axis, r axis, m axis, n axis and v axis; using a screen plate to transfer a transfer pattern to at least one surface of the sapphire wafer by way of screen printing, and solidifying the transfer pattern through a solidification means; and performing an etching process to form a plurality of microstructures having a specific shape on the surface of the sapphire wafer. The microstructure is dressing grains of the polishing pad dresser.

Description

Sapphire disc polishing pad dresser manufacturing method

The invention relates to a method for manufacturing a sapphire disc polishing pad dresser, in particular to a patterning process technology comprising using a transfer material and a screen during the process to precisely control the screen printing pattern and the film thickness.

Because of the booming development of the semiconductor and optoelectronic industries, the line width requirements of components are becoming more stringent, and the high development of circuit integration has become increasingly important in the process of planarization. Among them, the chemical polishing method can meet the high flatness in the electronic component process. Requirements: Recently, a high-hardness sapphire substrate has been used to produce a trimmer with uniform appearance and uniform height to improve the life of the dresser and the polishing yield. However, the current trimming method is made by using wet. Form and dry etching, the pre-process of the two methods is to define the trimming particle size, trim particle size and spacing of the refiner by the ability of the yellow light to define the pattern, and then the height required to trim the particles through the etching process, The size and angle are etched out, but since the height of the trimming grain needs to be 50 μm or more, the dry etching selectivity ratio (single crystal alumina/resistance thickness disappearance rate ratio) of the photoresist and the sapphire substrate (ie, single crystal alumina) is smaller than 0.5 to estimate that the photoresist etching barrier required for the dry etching process needs to be 100 μm or more, and evenly coated with such a thick film The difficulty is higher, and the higher the thickness of the photoresist is, the higher the thickness of the photoresist is. Therefore, how to improve the etching resistance of the barrier layer and the definition of thick film coating and trimming is a major issue. High, its flattening and grinding is not easy, and its flatness will affect the yellow light process yield, so how to overcome the sapphire Insufficientness is another important issue.

Sapphire patterning of conventional techniques using photoresist coating, exposure development or embossing The method, forming a pattern, and then etching to transfer the pattern onto the sapphire substrate, the advantage of the above manner is that pattern transfer of several micrometers to hundreds of nanometers can be performed, but the disadvantage is that the etching trench is unfavorably deep, such as several tens of micrometers. To hundreds of micrometers, there are two root causes for it. One is that the thickness of the photoresist film is too thin, which is not conducive to long-term dry etching of ion bombardment, and the other is that the polymer material is not resistant to high temperature sulfuric acid mixed solution. Etching conditions; in addition, it is highly desirable to improve the service life and number of times in the use of the trimming disc, and the trimming pellets can be produced on both sides of the wafer (hereinafter referred to as the double-sided process), and the number of times the disc material is used can be changed. Twice, it can be extremely important to reduce the material cost by half. However, the sapphire yellow lithography process of the prior art has several shortcomings. One disadvantage is that the yellow lithography process needs to use a suction cup to fix the wafer and suck it. When one side of the sapphire wafer is to be flipped for the second photoresist coating process, the first photoresist layer will be rubbed by the fixed action of the vacuum chuck. The crushing is not conducive to the two-sided process; the second disadvantage is that if the wafer is designed with perforation, it will not be able to adopt the vacuum chuck to absorb the spin coating; the third disadvantage is that the wafer itself is used in the yellow lithography process. For the relationship of transparent materials, the ultraviolet light is easily penetrated during exposure and directly affects the photoresist of the coated portion on the other side of the wafer, so it is not conducive to the double-sided process, resulting in a decrease in yield, and the existence of such problems Both of them make the traditional wafer process improve the process yield and face considerable challenges.

Moreover, the sapphire yellow light developing process of the prior art requires a suction cup to fix the wafer and suck one side of the sapphire wafer. If the second surface photoresist coating process is to be reversed, the first side has been The finished photoresist will be fixed by the vacuum chuck. The friction and crushing are not conducive to the double-sided process, so the productivity cannot be greatly improved. In addition, when the yellow light developing process is performed, the wafer itself is transparent, and the ultraviolet light is easily penetrated during direct exposure to affect the wafer. The photoresist on the other side of the coating is also unfavorable for the two-sided process, which also causes a drop in yield. Furthermore, in order to improve the etching barrier, the dry or wet etching conditions can withstand high depth. The existence of the problem has made the traditional wafer process to face a considerable challenge in improving the process yield, thus extending the idea of the present invention.

The invention provides a method for manufacturing a sapphire disc polishing pad dresser, the steps of which are The method includes: providing a sapphire wafer having a specific axial direction, wherein the specific axial direction is one of an a-axis, a c-axis, an r-axis, an m-axis, an n-axis, and a v-axis; a screen printing a transfer pattern onto at least one side of the sapphire wafer and curing the transfer pattern by a curing means; and performing an etching method to form a plurality of specific shapes on the surface of the sapphire wafer microstructure.

Preferably, wherein the material composition of the transfer pattern comprises: a polymer (polymer) or an oligomer or polymer monomer; a photoactive compound (PAC) or a thermal sensitive starter; an additive, the additive is moisture resistant Etching the mixture or dry etching resistant material; and a solvent.

Preferably, the moisture-resistant etching material is SiO ₂ or TiO ₂ of nano-sized particles.

Preferably, the transfer pattern is further transferred to one side of the sapphire wafer, and the transfer pattern is transferred to the other side of the sapphire wafer.

Preferably, the transfer pattern is simultaneously transferred to both sides of the sapphire wafer.

Preferably, wherein the transfer pattern transferred to the sapphire wafer has a thickness greater than 50 μm, optimally greater than 100 μm.

Preferably, the screen comprises: a natural mesh cloth, the material of the natural mesh cloth a mesh woven into a natural silk thread; or a synthetic mesh fabric which is refined for the production of synthetic fibers, such as nylon mesh, Tedron mesh, multi-twist polyester mesh, carbon fiber mesh, UV mesh, colored mesh cloth. a high tension mesh; or a metal mesh cloth, wherein the metal mesh wire can be made by electroforming or acid etching.

Preferably, the etching method comprises a dry etching method and a wet etching method.

Preferably, the shape of the microstructures is a symmetric flat cone, a symmetric pointed cone, an asymmetric flat cone, or an asymmetric pointed cone.

The invention has the advantages that it can overcome the difficulties encountered by the conventional method when the trimming grain of the sapphire disc polishing pad dresser has high requirements on the height, and does not need to directly print the pattern to the surface of the sapphire through the yellow light process, and the net The printing includes single-sided printing and double-sided printing, which overcomes the bottleneck that the technology cannot break through the production capacity.

1‧‧‧Sapphire wafer

11‧‧‧ first side

12‧‧‧ second side

2‧‧‧Web Edition

21‧‧‧Scraper

22‧‧‧Fixed means

3‧‧‧Transfer material

31‧‧‧Transfer pattern

4‧‧‧Microstructure

41‧‧‧symmetric flat cone

42‧‧‧Asymmetric flat cone

43‧‧‧symmetric pointed cone

44‧‧‧Asymmetric pointed cone

a~c‧‧‧step

The first figure shows a flow chart of a method for manufacturing a sapphire disc polishing pad conditioner.

The second figure shows a cross-sectional view of a sapphire wafer with a specific axial direction.

The third to third C-pictures show a single-sided printing pattern set of the sapphire disc polishing pad conditioner manufacturing method in the first embodiment.

The third D to the second G diagram shows a single-sided etching pattern set of the sapphire disc polishing pad conditioner manufacturing method in the first embodiment.

Figure 4A shows the single-sided symmetrical flat-tipped cone microstructure of the sapphire disc polishing pad conditioner.

Figure 4B shows the single-sided asymmetric flat-tipped bead microstructure of the sapphire disc polishing pad conditioner.

The fourth C-picture shows a single-sided symmetrical pointed cone-column microstructure of a sapphire disc polishing pad conditioner.

The fourth D image shows the single-sided asymmetric pointed cone-column microstructure of the sapphire disc polishing pad conditioner.

The fifth to fifth C-pictures show the double-sided printed image set of the sapphire disc polishing pad conditioner in the second embodiment.

The fifth to fifth G diagrams show the double-sided etching pattern set of the sapphire disc polishing pad conditioner in the second embodiment.

Figure 6A shows a cross-sectional view of the double-sided asymmetric flat-tipped bead microstructure of the sapphire disc polishing pad conditioner.

Figure 6B shows a cross-sectional view of the symmetrical structure of the double-sided symmetrical tip cone of the sapphire disc polishing pad conditioner.

Figure 6C shows a cross-sectional view of the double-sided asymmetric pointed cone microstructure of the sapphire disc polishing pad conditioner.

Referring to the first figure, there is shown a flow chart of a method for manufacturing a sapphire disc polishing pad conditioner, the steps comprising: (a) providing a sapphire wafer having a specific axial direction, the specific axis being an a-axis, a c-axis, One of the r-axis, the m-axis, the n-axis, and the v-axis; (b) by screen printing, transferring a transfer pattern to at least one side of the sapphire wafer using a screen, and by using one Curing means curing the transfer pattern; and (c) performing an etching method to form a plurality of microstructures having a specific shape on the surface of the sapphire wafer. The above is only a brief description of each step, and details of specific embodiments and implementation steps will be further disclosed.

First embodiment

Please refer to the second figure, which is a sectional view through the long crystal, lattice orientation, drill, tail and tail, section smoothing, ingot rounding, wire cutting, double side grinding and polishing surface finishing, etc. A series of conventional means provides a sapphire wafer 1 having a specific axial direction, which is one of an a-axis, a c-axis, an r-axis, an m-axis, an n-axis, and a v-axis. Preferably, a axial inclusion [11 0], [1 10], [2 0], [ 20], [ 110] and [ 2 0], the c-axis is [0001] and the r-axis contains [10] 1],[ 01 ], [01 ], [0 11], [1 0 ]as well as[ 101], m axial inclusion [ 010], [ 100], [01 0], [10 0], [1 00] and [0 10], the v-axis is [44] 3], and the n-axis is [22 3].

Next, please refer to the third A picture, providing a screen version 2, defining a turn on the screen version 2 After printing the pattern 31, the screen 2 is adsorbed on the first side 11 of the sapphire wafer 1. Preferably, the screen 2 is a natural mesh cloth, the material of the natural mesh cloth is a natural silk woven mesh cloth; or a synthetic mesh cloth, which is refined for synthetic fiber, such as nylon mesh. Tedron mesh, multi-twisted polyester mesh, carbon fiber mesh, UV mesh, colored mesh, high tension mesh; or a metal mesh, which can be made by electroforming or acid etching. In order to improve the printing suitability and stability of the mesh cloth, the printing effect can be more grasped, and it is based on the metal wire to meet the printing conditions. The metal mesh cloth has the advantages that other mesh cloth cannot replace, including stability. High elasticity, high flexibility, not easy to generate static electricity, good chemical resistance and anti-friction. Therefore, the resolution is high and a large amount of printing is possible. However, the disadvantage is that the metal is expensive and the recovery power is poor, so it is difficult to store.

Next, referring to FIG. 3B, a transfer material 3 is provided, including: a polymer or an oligomer or a polymer monomer; a photoactive compound (PAC) Or a heat sensitive induction initiator; an additive which is a material resistant to wet etching or dry etching; and a solvent. The above additives, such as moisture-resistant etching or dry etching-resistant materials, may be nano-sized particles of SiO ₂ or TiO ₂ , which are never used or directly added to the transfer in the conventional technique of sapphire patterning. Among the materials, these components can help the transfer pattern resist the etching conditions of high temperature and strong acid.

And a fixing means 22 (this embodiment is a fixing jig for clamping the side edges) After the sapphire wafer 1 is fixed, the transfer material 3 required for coating on the screen 2 is advanced in the same direction by a squeegee 21, and the desired transfer pattern 31 is transferred to the sapphire wafer 1. On the first side 11, by means of screen printing, the thickness of the transfer pattern 31 transferred to the sapphire wafer 1 can be made larger than 100 μm to meet the height required for trimming (usually more than 50 μm).

Next, please refer to the third C picture, and the screen 2 is removed to complete the single-sided printing. The step of subsequently using the curing means includes UV light, hot baking, and adding a chemical, that is, completing the step of single-sided printing of the sapphire wafer 1.

Refer to the third D~3G diagram, which shows the manufacturer of the sapphire disc polishing pad conditioner. An example of an etched embodiment of a single-sided printing process.

Referring to FIG. 3D, etching is performed on the first side 11 of the sapphire wafer 1, wherein the etching method includes a dry etching method and a wet etching method. This embodiment is exemplified by a wet etching method. The wet etching etch selectivity described herein is preferably a sapphire etch rate/transfer pattern etch rate <0.5.

Referring to the third E diagram, the sapphire wafer 1 is subjected to a wet etching for a period of time, and the transfer pattern 31 and the sapphire wafer 1 are both etched a small portion, and gradually form a pyramid-like microstructure 4 .

Referring to the third F diagram, after the etching is completed to produce the microstructure 4, the transfer pattern 31 on the sapphire wafer 1 is removed, and the first surface 11 is cleaned and completed.

Refer to the third G diagram for the profile of the sapphire disc polishing pad finisher. This is an embodiment of a symmetrical flat-tipped cone 41 in the microstructure 4.

Refer to the fourth A~4D diagram for the sapphire disc polishing pad finisher. FIG. 4A shows an embodiment of the microstructure 4 as a symmetric flat cone 41, and a fourth B shows an embodiment in which the microstructure 4 is an asymmetric flat cone 42 and the fourth C shows a micro Structure 4 is an embodiment of a symmetrical tip cone 43 and a fourth diagram D shows an embodiment of the microstructure 4 being an asymmetrical tip cone 44. The sapphire disc polishing pad conditioner having various microstructures of different shapes can be prepared by the foregoing process, including selecting a specific axial sapphire wafer, a composition ratio of the transfer material, and an etching process parameter value. Adjustments (temperature, time, etc.) are not repeated here, and the size, height, angle ratio, and the like of the microstructures in the drawings are merely for convenience of understanding, and are not limited to the shapes shown in the drawings.

Second embodiment

Referring to Figures 5A through 5C, an embodiment of double-sided printing of a sapphire disc polishing pad conditioner manufacturing method is shown.

Please refer to the second figure as in the previous embodiment. This is a cross-sectional view showing a sapphire wafer 1 having a specific axial direction, which is an a-axis, a c-axis, an r-axis, an m-axis, and an n-axis. And one of the v-axes, preferably wherein the a-axis comprises [11 0], [1 10], [2 0], [ 20], [ 110] and [ 2 0], the c-axis is [0001] and the r-axis contains [10] 1],[ 01 ], [01 ], [0 11], [1 0 ]as well as[ 101], m axial inclusion [ 010], [ 100], [01 0], [10 0], [1 00] and [0 10], the v-axis is [44] 3], and the n-axis is [22 3].

Next, referring to FIG. 5A, two screens 2 are provided. After a transfer pattern 31 is defined on the screen 2, the screen 2 is adsorbed on the first side 11 and the second side 12 of the sapphire wafer 1. Better Wherein the two screens 2 are a natural mesh cloth, the material of the natural mesh cloth is a natural silk woven mesh cloth; or a synthetic mesh cloth, which is made of synthetic fiber refining, such as: nylon mesh, special Long net, multi-twisted polyester net, carbon fiber net, UV net, colored net cloth, high tension net; or a metal mesh cloth, the metal mesh can be made by electroforming or acid etching In order to improve the printing suitability and stability of the mesh cloth and make the printing effect more graspable, it is based on the metal wire to meet the printing conditions, and the metal mesh cloth has the advantages that other mesh cloth cannot replace, including high stability. Therefore, the flexibility of the post-production system is large, it is not easy to generate static electricity, the chemical resistance is good, and the anti-friction is good. Therefore, the resolution is high and a large amount of printing can be performed, but the disadvantage is that the metal is expensive and the recovery power is poor, so it is difficult to store.

And providing a transfer material 3 on the first surface 11 and the second surface 12, and the transfer material 3 comprises: a polymer or an oligomer or a polymer monomer a photoactive compound (PAC) or a thermal induction initiator; an additive which is a moisture-resistant etching (H ₂ SO ₄ +H ₃ PO ₄ ) mixture or dry-resistant The material of the etching (BCl ₃ + Cl ₂ + Ar) is SiO ₂ or TiO ₂ of nano-sized particles; and a solvent. The above materials such as moisture-resistant etching or dry etching may be SiO ₂ or TiO ₂ of nano-sized particles which have never been used or directly added to the transfer material in the conventional technique of sapphire patterning. These ingredients help the transfer pattern resist the etching conditions of high temperature and strong acid.

After defining a transfer pattern 31 on the two screens 2, the two screens 2 are adsorbed on the blue The first side 11 and the second side 12 of the gemstone wafer 1 are on the first side 11 and the second side 12.

Next, please refer to the fifth B diagram and use a fixing means 22 (this embodiment is to clamp two After the sapphire wafer 1 is fixed by the fixing fixture of the side edge, the transfer material 3 required for coating on the two screens 2 is advanced in the same direction by the two squeegees 21, and the desired transfer pattern 31 is rotated. Printing onto the first side 11 and the second side 12 of the sapphire wafer 1, more preferably, the transfer to the sapphire wafer 1 The thickness of the transfer pattern 3 is greater than 100 μm to match the height required for trimming (usually greater than 50 μm).

The transfer operation requires attention to the transfer material 3 and the second surface 12 of the first surface 11 The difference in the composition of the transfer material 3 is because the concentration of the gravity is not the same, and the transfer material 3 must be prepared and distributed according to the user's needs.

Next, please refer to the fifth C diagram, the two screens 2 are removed, and the curing is subsequently used. The means include UV light, hot baking and addition of chemicals, that is, the step of performing double-sided printing of the sapphire wafer 1.

Refer to the fifth D~5G diagram, which shows the manufacturer of the sapphire disc polishing pad conditioner. An example of an etched embodiment of a double-sided printing process.

Referring to the fifth D picture, at the same time on the first side 11 and the second side 12 of the sapphire wafer 1 The etching is performed, wherein the etching method includes a dry etching method and a wet etching method, and this embodiment is exemplified by a wet etching method.

Referring to Figure 5E, the sapphire wafer 1 was wet etched for a period of time. The transfer pattern 31 and the sapphire wafer 1 having a specific axial direction are all eroded by a small portion, and the microstructure 4 of the cone-like cylinder is gradually formed.

Referring to the fifth F diagram, when the etching is completed and the complete microstructure 4 is formed, The transfer pattern 31 on the sapphire wafer 1 having a specific axial direction is removed, and the first surface 11 and the second surface 12 are cleaned.

Refer to the fifth G diagram for the profile of the sapphire disc polishing pad finisher. This is an embodiment of a symmetrical flat-tipped cone 41 in the microstructure 4.

Refer to the fifth G, six A to six C drawings for the sapphire disc polishing pad finisher In the various embodiments, the fifth G diagram shows an embodiment of the microstructure 4 being a symmetric flat cone 41. Figure 6A shows an embodiment of the microstructure 4 as an asymmetric flat-tipped cone 42 , the sixth Figure B shows an embodiment of the microstructure 4 as a symmetric pointed cone 43 , and the sixth Figure C shows the microstructure 4 as An embodiment of a symmetrical pointed cone 44 is shown. The double-sided sapphire disc polishing pad conditioner having various microstructures of different shapes can be prepared by the foregoing process, including selecting a specific axial sapphire wafer, a composition ratio of the transfer material, and an etching process parameter. The adjustment of the value (temperature, time, etc.) is not repeated here, and the size, height, angle ratio, etc. of the microstructures in the illustrations are for convenience only, and are not limited to the shapes shown in the figures. . The double-sided micro-structured sapphire disc polishing pad dresser can use one side firstly when used, and when the microstructure of the surface is gradually passivated and the trimming function is lost, the other side can be used, compared with the single side. The sapphire disc polishing pad conditioner of the structure is more economical, and the process disclosed in the present invention also improves the preparation of the double-sided microstructured sapphire disc polishing pad dresser by a yellow light process. Has the shortcomings.

The above description is only for the detailed description and illustration of the specific embodiments of the present invention, and is not intended to limit the present invention. All the scope of the present invention should be based on the following patent claims, and any skilled person in the present invention Variations or modifications that can be readily associated in the art are encompassed within the scope of the patents defined by the present invention.

a~c‧‧‧step

Claims (10)

A method for manufacturing a sapphire disc polishing pad conditioner, the method comprising: providing a sapphire wafer having a specific axis, the a-axis, the c-axis, the r-axis, the m-axis, the n-axis, and the v-axis One of the screen printing methods, transferring a transfer pattern to at least one side of the sapphire wafer using a screen, and curing the transfer pattern by a curing means; and performing an etching method A plurality of microstructures having a specific shape are formed on the surface of the sapphire wafer. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the composition of the transfer pattern comprises: a polymer or an oligomer or a polymer monomer (monomer) a photoactive compound (PAC) or a heat sensitive induction initiator; an additive which is a material resistant to wet etching or dry etching; and a solvent. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 2, wherein the moisture-resistant etching material is SiO ₂ or TiO ₂ of nano-sized particles. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, further comprising transferring the transfer pattern to one side of the sapphire wafer, and transferring the transfer pattern to the sapphire The other side of the wafer. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, further comprising simultaneously transferring the transfer pattern to both sides of the sapphire wafer. The method of manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the transfer pattern transferred to the sapphire wafer has a thickness greater than 50 μm. The method of manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the transfer pattern transferred to the sapphire wafer has a thickness of more than 100 μm. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the screen is a natural mesh, a synthetic mesh or a metal mesh. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the etching method comprises a dry etching method and a wet etching method. The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the microstructures are symmetrical flat cones, symmetric pointed cones, asymmetric flat cones, or asymmetric tips. Head cone column.