TW201503999A - Manufacturing method of polishing pad dresser of sapphire disc - Google Patents

Manufacturing method of polishing pad dresser of sapphire disc Download PDF

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Publication number
TW201503999A
TW201503999A TW102127168A TW102127168A TW201503999A TW 201503999 A TW201503999 A TW 201503999A TW 102127168 A TW102127168 A TW 102127168A TW 102127168 A TW102127168 A TW 102127168A TW 201503999 A TW201503999 A TW 201503999A
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sapphire
polishing pad
axis
manufacturing
pad conditioner
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TW102127168A
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Chinese (zh)
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TWI548486B (en
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Jun-Han Dai
Zi-Xuan Dai
Kuang-Ling Wei
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Tera Xtal Technology Corp
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Priority to TW102127168A priority Critical patent/TWI548486B/en
Priority to CN201410306418.5A priority patent/CN104347383B/en
Priority to US14/340,817 priority patent/US20150027063A1/en
Publication of TW201503999A publication Critical patent/TW201503999A/en
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Publication of TWI548486B publication Critical patent/TWI548486B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A manufacturing method of polishing pad dresser of sapphire disc comprises the following steps: providing a sapphire wafer having a specific axis direction; the specific axis direction being one of a axis direction, c axis, r axis, m axis, n axis and v axis; using a screen plate to transfer a transfer pattern to at least one surface of the sapphire wafer by way of screen printing, and solidifying the transfer pattern through a solidification means; and performing an etching process to form a plurality of microstructures having a specific shape on the surface of the sapphire wafer. The microstructure is dressing grains of the polishing pad dresser.

Description

藍寶石碟片拋光墊修整器之製造方法 Sapphire disc polishing pad dresser manufacturing method

本發明係一種藍寶石碟片拋光墊修整器之製造方法,尤其是指在製程過程中包含使用一種轉印材料及網版之圖案化製程技術,以精密控制網印圖案及薄膜厚度。 The invention relates to a method for manufacturing a sapphire disc polishing pad dresser, in particular to a patterning process technology comprising using a transfer material and a screen during the process to precisely control the screen printing pattern and the film thickness.

因為半導體及光電產業之蓬勃發展,對元件之線寬要求逐漸嚴苛,以及電路積體化的高度發展導致平坦化之製程日趨重要,其中,化學拋光法能夠滿足電子元件製程中高度平坦化的要求;近來,採用高硬度之藍寶石基材,製造出一外觀形狀及裸露高度均一之修整器以提升修整器使用壽命及拋光良率之方式已被提出,然而目前修整粒之製造方式為採用濕式及乾式蝕刻形成,此兩種手法的前製程皆為利用黃光定義圖案的能力定義出整修器之修整粒分佈、修整顆粒尺寸大小及間距,再透過蝕刻製程將修整顆粒所需之高度、大小、角度蝕刻出來,但由於修整粒的高度需要在50μm以上,以光阻及藍寶石基材(即單晶氧化鋁)之乾蝕刻選擇比(單晶氧化鋁/光阻厚度消失速率比值)小於0.5來估算,乾蝕刻製程所需要的光阻蝕刻阻擋層需100μm以上,均勻塗佈如此之厚膜有其困難度,而在越高修整粒的需求下光阻厚度更顯重要,因此如何提升阻擋層之耐蝕刻能力又能兼顧厚膜塗佈及修整粒圖案定義是一大課題,另外藍寶石硬度較高,其平坦化研磨不易,而其平坦度又會影響到黃光製程良率,所以如何克服藍寶石平 坦度不足亦為另一重要課題。 Because of the booming development of the semiconductor and optoelectronic industries, the line width requirements of components are becoming more stringent, and the high development of circuit integration has become increasingly important in the process of planarization. Among them, the chemical polishing method can meet the high flatness in the electronic component process. Requirements: Recently, a high-hardness sapphire substrate has been used to produce a trimmer with uniform appearance and uniform height to improve the life of the dresser and the polishing yield. However, the current trimming method is made by using wet. Form and dry etching, the pre-process of the two methods is to define the trimming particle size, trim particle size and spacing of the refiner by the ability of the yellow light to define the pattern, and then the height required to trim the particles through the etching process, The size and angle are etched out, but since the height of the trimming grain needs to be 50 μm or more, the dry etching selectivity ratio (single crystal alumina/resistance thickness disappearance rate ratio) of the photoresist and the sapphire substrate (ie, single crystal alumina) is smaller than 0.5 to estimate that the photoresist etching barrier required for the dry etching process needs to be 100 μm or more, and evenly coated with such a thick film The difficulty is higher, and the higher the thickness of the photoresist is, the higher the thickness of the photoresist is. Therefore, how to improve the etching resistance of the barrier layer and the definition of thick film coating and trimming is a major issue. High, its flattening and grinding is not easy, and its flatness will affect the yellow light process yield, so how to overcome the sapphire Insufficientness is another important issue.

習知技術之藍寶石圖案化採用光阻塗佈、曝光顯影或壓印 法,形成圖案,進而蝕刻將圖案轉移到藍寶石基板上,上述方式之優點為可進行數微米至數百奈米尺寸之圖案轉移,但缺點是不利很深的蝕刻溝槽製造如:幾十微米至數百微米,歸究其根本原因有二,其一為光阻薄膜之厚度太薄不利於長時間的乾式蝕刻之離子轟擊,其二為高分子材質不耐高溫硫磷酸混合液之濕式蝕刻條件;另外,在修整碟的使用上極希望能盡可能提高使用壽命及次數,而晶圓之雙面皆可製作修整粒(以下稱雙面製程),可將碟片材料的使用次數變成兩倍,可達到材料成本減半因而顯得極為重要,但習知技術之藍寶石之黃光微影製程存在數項缺點,其一缺點為黃光微影製程需用一吸盤進行固定該晶圓之動作而吸住該藍寶石晶圓其中一面,如欲翻轉進行第二面光阻塗佈製程時,第一面光阻層將會因該真空吸盤進行的固定動作而有所磨擦及壓傷,而不利於雙面製程;其二缺點為,若該晶圓為具穿孔之設計,亦將無法採真空吸盤吸附旋轉塗佈;其三缺點為在進行黃光微影製程時因晶圓本身為透明材料的關係,曝光時紫外光極易穿透而直接影響到晶圓之另一面所塗部的光阻,因此也不利於雙面製程,造成良率之下降,而此等問題之存在都讓傳統晶圓製程提升製程良率面臨相當大的挑戰。 Sapphire patterning of conventional techniques using photoresist coating, exposure development or embossing The method, forming a pattern, and then etching to transfer the pattern onto the sapphire substrate, the advantage of the above manner is that pattern transfer of several micrometers to hundreds of nanometers can be performed, but the disadvantage is that the etching trench is unfavorably deep, such as several tens of micrometers. To hundreds of micrometers, there are two root causes for it. One is that the thickness of the photoresist film is too thin, which is not conducive to long-term dry etching of ion bombardment, and the other is that the polymer material is not resistant to high temperature sulfuric acid mixed solution. Etching conditions; in addition, it is highly desirable to improve the service life and number of times in the use of the trimming disc, and the trimming pellets can be produced on both sides of the wafer (hereinafter referred to as the double-sided process), and the number of times the disc material is used can be changed. Twice, it can be extremely important to reduce the material cost by half. However, the sapphire yellow lithography process of the prior art has several shortcomings. One disadvantage is that the yellow lithography process needs to use a suction cup to fix the wafer and suck it. When one side of the sapphire wafer is to be flipped for the second photoresist coating process, the first photoresist layer will be rubbed by the fixed action of the vacuum chuck. The crushing is not conducive to the two-sided process; the second disadvantage is that if the wafer is designed with perforation, it will not be able to adopt the vacuum chuck to absorb the spin coating; the third disadvantage is that the wafer itself is used in the yellow lithography process. For the relationship of transparent materials, the ultraviolet light is easily penetrated during exposure and directly affects the photoresist of the coated portion on the other side of the wafer, so it is not conducive to the double-sided process, resulting in a decrease in yield, and the existence of such problems Both of them make the traditional wafer process improve the process yield and face considerable challenges.

又因習知技術之藍寶石之黃光顯影製程需用一吸盤進行固定該晶圓之動作而吸住該藍寶石晶圓其中一面,如欲翻轉進行第二面光阻塗佈製程時,第一面已完成之光阻將會因該真空吸盤進行的固定動作而有 所磨擦、壓傷,而不利於雙面製程,因此無法大幅提升產能,另外在進行黃光顯影製程時因晶圓本身為透明的關係,曝光時紫外光極易穿透直接干擾影響到晶圓之另一面所塗部的光阻,因此也不利於雙面製程,也會造成良率之下降,再者,為提高蝕刻阻擋層可耐受高縱深之乾式或濕式蝕刻條件,而此等問題之存在都讓傳統晶圓製程提升製程良率面臨相當大的挑戰,因此衍伸出本發明之想法。 Moreover, the sapphire yellow light developing process of the prior art requires a suction cup to fix the wafer and suck one side of the sapphire wafer. If the second surface photoresist coating process is to be reversed, the first side has been The finished photoresist will be fixed by the vacuum chuck. The friction and crushing are not conducive to the double-sided process, so the productivity cannot be greatly improved. In addition, when the yellow light developing process is performed, the wafer itself is transparent, and the ultraviolet light is easily penetrated during direct exposure to affect the wafer. The photoresist on the other side of the coating is also unfavorable for the two-sided process, which also causes a drop in yield. Furthermore, in order to improve the etching barrier, the dry or wet etching conditions can withstand high depth. The existence of the problem has made the traditional wafer process to face a considerable challenge in improving the process yield, thus extending the idea of the present invention.

本發明提出一種藍寶石碟片拋光墊修整器之製造方法,其步 驟包含:提供一具有特定軸向的藍寶石晶圓,該特定軸向為a軸向、c軸、r軸、m軸、n軸以及v軸的其中之一;以網版印刷之方式,使用一網版將一轉印圖案轉印至該藍寶石晶圓之至少一面,並藉由一固化手段固化該轉印圖案;以及進行一蝕刻法以在該藍寶石晶圓表面形成複數個具有特定形狀之微結構。 The invention provides a method for manufacturing a sapphire disc polishing pad dresser, the steps of which are The method includes: providing a sapphire wafer having a specific axial direction, wherein the specific axial direction is one of an a-axis, a c-axis, an r-axis, an m-axis, an n-axis, and a v-axis; a screen printing a transfer pattern onto at least one side of the sapphire wafer and curing the transfer pattern by a curing means; and performing an etching method to form a plurality of specific shapes on the surface of the sapphire wafer microstructure.

較佳地,其中該轉印圖案之材料組成包括:一聚合物 (polymer)或寡聚合物(oligomer)或聚合物單體(monomer);一光敏感起始劑(photoactive compound,PAC)或熱敏感應起始劑;一添加劑(additive),該添加劑為耐濕式蝕刻混合液或耐乾式蝕刻之材料;以及一溶劑(solvent)。 Preferably, wherein the material composition of the transfer pattern comprises: a polymer (polymer) or an oligomer or polymer monomer; a photoactive compound (PAC) or a thermal sensitive starter; an additive, the additive is moisture resistant Etching the mixture or dry etching resistant material; and a solvent.

較佳地,其中該耐濕式蝕刻之材料為奈米級微粒之SiO2或TiO2Preferably, the moisture-resistant etching material is SiO 2 or TiO 2 of nano-sized particles.

較佳地,其中更包括將該轉印圖案轉印至該藍寶石晶圓之一面,再將該轉印圖案轉印至該藍寶石晶圓之另一面。 Preferably, the transfer pattern is further transferred to one side of the sapphire wafer, and the transfer pattern is transferred to the other side of the sapphire wafer.

較佳地,其中更包括將該轉印圖案同時轉印至該藍寶石晶圓之兩面。 Preferably, the transfer pattern is simultaneously transferred to both sides of the sapphire wafer.

較佳地,其中轉印至該藍寶石晶圓之該轉印圖案之厚度大於 50μm,最佳地係大於100μm。 Preferably, wherein the transfer pattern transferred to the sapphire wafer has a thickness greater than 50 μm, optimally greater than 100 μm.

較佳地,其中該網版包含:一天然網布,該天然網布之材料 為天然絲線織成之網布;或一合成網布,該合成網布為合成纖維提煉製造如:尼龍網、特多龍網、多撚絲聚酯網、碳纖維網、UV網、有色網布、高張力網;或一金屬網布,該金屬網布為金屬絲線可藉由電鑄法或酸蝕刻法製作而成。 Preferably, the screen comprises: a natural mesh cloth, the material of the natural mesh cloth a mesh woven into a natural silk thread; or a synthetic mesh fabric which is refined for the production of synthetic fibers, such as nylon mesh, Tedron mesh, multi-twist polyester mesh, carbon fiber mesh, UV mesh, colored mesh cloth. a high tension mesh; or a metal mesh cloth, wherein the metal mesh wire can be made by electroforming or acid etching.

較佳地,其中該蝕刻法包含乾式蝕刻法及濕式蝕刻法。 Preferably, the etching method comprises a dry etching method and a wet etching method.

較佳地,其中該等微結構之形狀為對稱平頭錐柱、對稱尖頭錐柱、不對稱平頭錐柱,或不對稱尖頭錐柱。 Preferably, the shape of the microstructures is a symmetric flat cone, a symmetric pointed cone, an asymmetric flat cone, or an asymmetric pointed cone.

本發明之優點在於可以克服需當該藍寶石碟片拋光墊修整器之修整粒對高度需求甚高時傳統方法遇到的困難,無須透過黃光製程直接將圖案印刷至藍寶石之表面,且該網版印刷包含單面印刷以及雙面印刷,克服習之技術無法突破產能的瓶頸。 The invention has the advantages that it can overcome the difficulties encountered by the conventional method when the trimming grain of the sapphire disc polishing pad dresser has high requirements on the height, and does not need to directly print the pattern to the surface of the sapphire through the yellow light process, and the net The printing includes single-sided printing and double-sided printing, which overcomes the bottleneck that the technology cannot break through the production capacity.

1‧‧‧藍寶石晶圓 1‧‧‧Sapphire wafer

11‧‧‧第一面 11‧‧‧ first side

12‧‧‧第二面 12‧‧‧ second side

2‧‧‧網版 2‧‧‧Web Edition

21‧‧‧刮板 21‧‧‧Scraper

22‧‧‧固定手段 22‧‧‧Fixed means

3‧‧‧轉印材料 3‧‧‧Transfer material

31‧‧‧轉印圖案 31‧‧‧Transfer pattern

4‧‧‧微結構 4‧‧‧Microstructure

41‧‧‧對稱平頭錐柱 41‧‧‧symmetric flat cone

42‧‧‧不對稱平頭錐柱 42‧‧‧Asymmetric flat cone

43‧‧‧對稱尖頭錐柱 43‧‧‧symmetric pointed cone

44‧‧‧不對稱尖頭錐柱 44‧‧‧Asymmetric pointed cone

a~c‧‧‧步驟 a~c‧‧‧step

第一圖顯示藍寶石碟片拋光墊修整器製造方法之流程圖。 The first figure shows a flow chart of a method for manufacturing a sapphire disc polishing pad conditioner.

第二圖顯示具有特定軸向的藍寶石晶圓之剖面圖。 The second figure shows a cross-sectional view of a sapphire wafer with a specific axial direction.

第三A~三C圖顯示第一實施例中藍寶石碟片拋光墊修整器製造方法之單面印刷圖組。 The third to third C-pictures show a single-sided printing pattern set of the sapphire disc polishing pad conditioner manufacturing method in the first embodiment.

第三D~二G圖顯示第一實施例中藍寶石碟片拋光墊修整器製造方法之單面蝕刻圖組。 The third D to the second G diagram shows a single-sided etching pattern set of the sapphire disc polishing pad conditioner manufacturing method in the first embodiment.

第四A圖顯示藍寶石碟片拋光墊修整器之單面對稱平頭錐柱微結構。 Figure 4A shows the single-sided symmetrical flat-tipped cone microstructure of the sapphire disc polishing pad conditioner.

第四B圖顯示藍寶石碟片拋光墊修整器之單面不對稱平頭錐柱微結構。 Figure 4B shows the single-sided asymmetric flat-tipped bead microstructure of the sapphire disc polishing pad conditioner.

第四C圖顯示藍寶石碟片拋光墊修整器之單面對稱尖頭錐柱微結構。 The fourth C-picture shows a single-sided symmetrical pointed cone-column microstructure of a sapphire disc polishing pad conditioner.

第四D圖顯示藍寶石碟片拋光墊修整器之單面不對稱尖頭錐柱微結構。 The fourth D image shows the single-sided asymmetric pointed cone-column microstructure of the sapphire disc polishing pad conditioner.

第五A~五C圖顯示第二實施例中藍寶石碟片拋光墊修整器製造方法之雙面印刷圖組。 The fifth to fifth C-pictures show the double-sided printed image set of the sapphire disc polishing pad conditioner in the second embodiment.

第五D~五G圖顯示第二實施例中藍寶石碟片拋光墊修整器製造方法之雙面蝕刻圖組。 The fifth to fifth G diagrams show the double-sided etching pattern set of the sapphire disc polishing pad conditioner in the second embodiment.

第六A圖顯示藍寶石碟片拋光墊修整器之雙面不對稱平頭錐柱微結構之剖面圖。 Figure 6A shows a cross-sectional view of the double-sided asymmetric flat-tipped bead microstructure of the sapphire disc polishing pad conditioner.

第六B圖顯示藍寶石碟片拋光墊修整器之雙面對稱尖頭錐柱微結構之剖面圖。 Figure 6B shows a cross-sectional view of the symmetrical structure of the double-sided symmetrical tip cone of the sapphire disc polishing pad conditioner.

第六C圖顯示藍寶石碟片拋光墊修整器之雙面不對稱尖頭錐柱微結構之剖面圖。 Figure 6C shows a cross-sectional view of the double-sided asymmetric pointed cone microstructure of the sapphire disc polishing pad conditioner.

參閱第一圖,其顯示藍寶石碟片拋光墊修整器之製造方法流程圖,其步驟包含:(a)提供一具有特定軸向的藍寶石晶圓,該特定軸向為a軸向、c軸、r軸、m軸、n軸以及v軸的其中之一;(b)以網版印刷之方式,使用一網版將一轉印圖案轉印至該藍寶石晶圓之至少一面,並藉由一固化手段固化該轉印圖案;以及(c)進行一蝕刻法以在該藍寶石晶圓表面形成複數個具有特定形狀之微結構。以上僅為各步驟之簡述,各具體實施例及實施步驟細節將進一步揭露如後。 Referring to the first figure, there is shown a flow chart of a method for manufacturing a sapphire disc polishing pad conditioner, the steps comprising: (a) providing a sapphire wafer having a specific axial direction, the specific axis being an a-axis, a c-axis, One of the r-axis, the m-axis, the n-axis, and the v-axis; (b) by screen printing, transferring a transfer pattern to at least one side of the sapphire wafer using a screen, and by using one Curing means curing the transfer pattern; and (c) performing an etching method to form a plurality of microstructures having a specific shape on the surface of the sapphire wafer. The above is only a brief description of each step, and details of specific embodiments and implementation steps will be further disclosed.

第一實施例First embodiment

請先參考第二圖,此為一剖面圖,透過長晶、晶格方向定位、 套鑽、去頭尾、斷面磨平、晶棒滾圓、線切、雙面研磨以及拋光表面修整等等一連串習知手段提供一具有特定軸向的藍寶石晶圓1,該特定軸向為a軸向、c軸、r軸、m軸、n軸以及v軸的其中之一,較佳地,其中該a軸向包含[110]、[110]、[20]、[20]、[110]以及[20]、該c軸向為[0001]該r軸向包含[101]、[01]、[01]、[011]、[10]以及[101]、m軸向包含[010]、[100]、[010]、[100]、[100]以及[010]、該v軸向為[443],以及n軸向為[223]。 Please refer to the second figure, which is a sectional view through the long crystal, lattice orientation, drill, tail and tail, section smoothing, ingot rounding, wire cutting, double side grinding and polishing surface finishing, etc. A series of conventional means provides a sapphire wafer 1 having a specific axial direction, which is one of an a-axis, a c-axis, an r-axis, an m-axis, an n-axis, and a v-axis. Preferably, a axial inclusion [11 0], [1 10], [2 0], [ 20], [ 110] and [ 2 0], the c-axis is [0001] and the r-axis contains [10] 1],[ 01 ], [01 ], [0 11], [1 0 ]as well as[ 101], m axial inclusion [ 010], [ 100], [01 0], [10 0], [1 00] and [0 10], the v-axis is [44] 3], and the n-axis is [22 3].

接著請參考第三A圖,提供一網版2,在該網版2上定義一轉 印圖案31後,將網版2吸附在藍寶石晶圓1之第一面11上。較佳地,其中該網版2為一天然網布,該天然網布之材料為天然絲線織成之網布;或一合成網布,該合成網布為合成纖維提煉製造如:尼龍網、特多龍網、多撚絲聚酯網、碳纖維網、UV網、有色網布、高張力網;或一金屬網布,該金屬網布為金屬絲線可藉由電鑄法或酸蝕刻法製作而成;而為改善網布之印刷適性與穩定性,使印刷效果更能掌握,乃取材於金屬絲線,以符合印刷條件之需求,該金屬網布有其它網布無法取代之優點,包含穩定性高故後製之彈性大,不易產生靜電、抗化性佳以及抗摩擦力佳故解析度高也可大量之印刷,但缺點是金屬價格昂貴且回復力差,故保存不易。 Next, please refer to the third A picture, providing a screen version 2, defining a turn on the screen version 2 After printing the pattern 31, the screen 2 is adsorbed on the first side 11 of the sapphire wafer 1. Preferably, the screen 2 is a natural mesh cloth, the material of the natural mesh cloth is a natural silk woven mesh cloth; or a synthetic mesh cloth, which is refined for synthetic fiber, such as nylon mesh. Tedron mesh, multi-twisted polyester mesh, carbon fiber mesh, UV mesh, colored mesh, high tension mesh; or a metal mesh, which can be made by electroforming or acid etching. In order to improve the printing suitability and stability of the mesh cloth, the printing effect can be more grasped, and it is based on the metal wire to meet the printing conditions. The metal mesh cloth has the advantages that other mesh cloth cannot replace, including stability. High elasticity, high flexibility, not easy to generate static electricity, good chemical resistance and anti-friction. Therefore, the resolution is high and a large amount of printing is possible. However, the disadvantage is that the metal is expensive and the recovery power is poor, so it is difficult to store.

接著請參考第三B圖,提供一轉印材料3,包括:一聚合物 (polymer)或寡聚合物(oligomer)或聚合物單體(monomer);一光敏感起始劑(photoactive compound,PAC)或熱敏感應起始劑;一添加劑(additive),該添加劑為耐濕式蝕刻或耐乾式蝕刻之材料;以及一溶劑(solvent)。上述之添加 劑,例如耐濕式蝕刻或耐乾式蝕刻之材料可以是奈米級微粒之SiO2或TiO2,該些成分在藍寶石圖案化之習知技術中從未被使用或直接添加於轉印材料中,該些成分可幫助轉印圖案抵抗高溫強酸的蝕刻條件。 Next, referring to FIG. 3B, a transfer material 3 is provided, including: a polymer or an oligomer or a polymer monomer; a photoactive compound (PAC) Or a heat sensitive induction initiator; an additive which is a material resistant to wet etching or dry etching; and a solvent. The above additives, such as moisture-resistant etching or dry etching-resistant materials, may be nano-sized particles of SiO 2 or TiO 2 , which are never used or directly added to the transfer in the conventional technique of sapphire patterning. Among the materials, these components can help the transfer pattern resist the etching conditions of high temperature and strong acid.

並以一固定手段22(本實施例是夾持兩側緣的固定夾具)固 定藍寶石晶圓1後,在該網版2塗佈上所需之該轉印材料3,利用一刮板21朝同一方向前進,將所需的轉印圖案31轉印到藍寶石晶圓1之第一面11上,藉由網版印刷的方式,可使轉印至該藍寶石晶圓1之該轉印圖案31之厚度大於100μm,以符合修整粒所需之高度(通常需大於50μm)。 And a fixing means 22 (this embodiment is a fixing jig for clamping the side edges) After the sapphire wafer 1 is fixed, the transfer material 3 required for coating on the screen 2 is advanced in the same direction by a squeegee 21, and the desired transfer pattern 31 is transferred to the sapphire wafer 1. On the first side 11, by means of screen printing, the thickness of the transfer pattern 31 transferred to the sapphire wafer 1 can be made larger than 100 μm to meet the height required for trimming (usually more than 50 μm).

接著請參考第三C圖,將該網版2取下即完成該單面印刷之 步驟,後續使用該固化手段包括UV光、熱烤以及添加化學藥劑,即完成藍寶石晶圓1之單面印刷之步驟。 Next, please refer to the third C picture, and the screen 2 is removed to complete the single-sided printing. The step of subsequently using the curing means includes UV light, hot baking, and adding a chemical, that is, completing the step of single-sided printing of the sapphire wafer 1.

參閱第三D~三G圖,其顯示藍寶石碟片拋光墊修整器製造方 法之單面印刷之蝕刻實施例圖。 Refer to the third D~3G diagram, which shows the manufacturer of the sapphire disc polishing pad conditioner. An example of an etched embodiment of a single-sided printing process.

參閱第三D圖,在藍寶石晶圓1之第一面11上進行蝕刻,其中該蝕刻法包含乾式蝕刻法及濕式蝕刻法,此實施例以濕式蝕刻法為例。在此所述之濕蝕刻的蝕刻選擇率較佳為藍寶石蝕刻速率/轉印圖案蝕刻速率<0.5。 Referring to FIG. 3D, etching is performed on the first side 11 of the sapphire wafer 1, wherein the etching method includes a dry etching method and a wet etching method. This embodiment is exemplified by a wet etching method. The wet etching etch selectivity described herein is preferably a sapphire etch rate/transfer pattern etch rate <0.5.

參閱第三E圖,藍寶石晶圓1進行了一段時間之濕式蝕刻,該轉印圖案31以及藍寶石晶圓1皆被侵蝕一小部份,逐漸形成類錐柱體之微結構4。 Referring to the third E diagram, the sapphire wafer 1 is subjected to a wet etching for a period of time, and the transfer pattern 31 and the sapphire wafer 1 are both etched a small portion, and gradually form a pyramid-like microstructure 4 .

參閱第三F圖,當該蝕刻完成而產生該微結構4後,將藍寶石晶圓1上之該轉印圖案31移除,並將該第一面11清洗乾淨即完成。 Referring to the third F diagram, after the etching is completed to produce the microstructure 4, the transfer pattern 31 on the sapphire wafer 1 is removed, and the first surface 11 is cleaned and completed.

參閱第三G圖,為該藍寶石碟片拋光墊修整器完成之剖面 圖,此為該微結構4中之對稱平頭錐柱41之實施例。 Refer to the third G diagram for the profile of the sapphire disc polishing pad finisher. This is an embodiment of a symmetrical flat-tipped cone 41 in the microstructure 4.

參閱第四A~四D圖,為該藍寶石碟片拋光墊修整器完成之多 種實施例圖,第四A圖顯示微結構4為對稱平頭錐柱41之實施例圖,第四B圖顯示微結構4為不對稱平頭錐柱42之實施例圖,第四C圖顯示微結構4為對稱尖頭錐柱43之實施例圖,第四D圖顯示微結構4為不對稱尖頭錐柱44之實施例圖。所述具有各種不同形狀微結構之藍寶石碟片拋光墊修整器,皆可藉由前述之製程製備而得,包括選擇特定軸向之藍寶石晶圓、轉印材料的成分比例、蝕刻製程參數值的調整(溫度、時間等),在此不一一贅述,且該些圖示中的微結構之大小、高度、角度之比例等僅是為了方便了解,並非僅限於圖中所示之形狀。 Refer to the fourth A~4D diagram for the sapphire disc polishing pad finisher. FIG. 4A shows an embodiment of the microstructure 4 as a symmetric flat cone 41, and a fourth B shows an embodiment in which the microstructure 4 is an asymmetric flat cone 42 and the fourth C shows a micro Structure 4 is an embodiment of a symmetrical tip cone 43 and a fourth diagram D shows an embodiment of the microstructure 4 being an asymmetrical tip cone 44. The sapphire disc polishing pad conditioner having various microstructures of different shapes can be prepared by the foregoing process, including selecting a specific axial sapphire wafer, a composition ratio of the transfer material, and an etching process parameter value. Adjustments (temperature, time, etc.) are not repeated here, and the size, height, angle ratio, and the like of the microstructures in the drawings are merely for convenience of understanding, and are not limited to the shapes shown in the drawings.

第二實施例Second embodiment

參閱第五A~五C圖,其顯示藍寶石碟片拋光墊修整器製造方法之雙面印刷之實施例。 Referring to Figures 5A through 5C, an embodiment of double-sided printing of a sapphire disc polishing pad conditioner manufacturing method is shown.

請如同上個實施例先參考第二圖,此為一剖面圖,提供一具有特定軸向的藍寶石晶圓1,該特定軸向為a軸向、c軸、r軸、m軸、n軸以及v軸的其中之一,較佳地,其中該a軸向包含[110]、[110]、[20]、[20]、[110]以及[20]、該c軸向為[0001]該r軸向包含[101]、[01]、[01]、[011]、[10]以及[101]、m軸向包含[010]、[100]、[010]、[100]、[100]以及[010]、該v軸向為[443],以及n軸向為[223]。 Please refer to the second figure as in the previous embodiment. This is a cross-sectional view showing a sapphire wafer 1 having a specific axial direction, which is an a-axis, a c-axis, an r-axis, an m-axis, and an n-axis. And one of the v-axes, preferably wherein the a-axis comprises [11 0], [1 10], [2 0], [ 20], [ 110] and [ 2 0], the c-axis is [0001] and the r-axis contains [10] 1],[ 01 ], [01 ], [0 11], [1 0 ]as well as[ 101], m axial inclusion [ 010], [ 100], [01 0], [10 0], [1 00] and [0 10], the v-axis is [44] 3], and the n-axis is [22 3].

接著請參考第五A圖,提供兩網版2,在該網版2上定義一轉印圖案31後,將網版2吸附在藍寶石晶圓1之第一面11及第二面12上。較佳 地其中該兩網版2為一天然網布,該天然網布之材料為天然絲線織成之網布;或一合成網布,該合成網布為合成纖維提煉製造如:尼龍網、特多龍網、多撚絲聚酯網、碳纖維網、UV網、有色網布、高張力網;或一金屬網布,該金屬網布為金屬絲線可藉由電鑄法或酸蝕刻法製作而成;而為改善網布之印刷適性與穩定性,使印刷效果更能掌握,乃取材於金屬絲線,以符合印刷條件之需求,該金屬網布有其它網布無法取代之優點,包含穩定性高故後製之彈性大,不易產生靜電、抗化性佳以及抗摩擦力佳故解析度高也可大量之印刷,但缺點是金屬價格昂貴且回復力差,故保存不易。 Next, referring to FIG. 5A, two screens 2 are provided. After a transfer pattern 31 is defined on the screen 2, the screen 2 is adsorbed on the first side 11 and the second side 12 of the sapphire wafer 1. Better Wherein the two screens 2 are a natural mesh cloth, the material of the natural mesh cloth is a natural silk woven mesh cloth; or a synthetic mesh cloth, which is made of synthetic fiber refining, such as: nylon mesh, special Long net, multi-twisted polyester net, carbon fiber net, UV net, colored net cloth, high tension net; or a metal mesh cloth, the metal mesh can be made by electroforming or acid etching In order to improve the printing suitability and stability of the mesh cloth and make the printing effect more graspable, it is based on the metal wire to meet the printing conditions, and the metal mesh cloth has the advantages that other mesh cloth cannot replace, including high stability. Therefore, the flexibility of the post-production system is large, it is not easy to generate static electricity, the chemical resistance is good, and the anti-friction is good. Therefore, the resolution is high and a large amount of printing can be performed, but the disadvantage is that the metal is expensive and the recovery power is poor, so it is difficult to store.

以及在該第一面11以及該第二面12上提供一轉印材料3,而 該轉印材料3包括:一聚合物(polymer)或寡聚合物(oligomer)或聚合物單體(monomer);一光敏感起始劑(photoactive compound,PAC)或熱敏感應起始劑;一添加劑(additive),該添加劑為耐濕式蝕刻(H2SO4+H3PO4)混合液或耐乾式蝕刻(BCl3+Cl2+Ar)之材料,為奈米級微粒之SiO2或TiO2;以及一溶劑(solvent)。上述,例如耐濕式蝕刻或耐乾式蝕刻之材料可以是奈米級微粒之SiO2或TiO2,該些成分在藍寶石圖案化之習知技術中從未被使用或直接添加於轉印材料中,該些成分可幫助轉印圖案抵抗高溫強酸的蝕刻條件。 And providing a transfer material 3 on the first surface 11 and the second surface 12, and the transfer material 3 comprises: a polymer or an oligomer or a polymer monomer a photoactive compound (PAC) or a thermal induction initiator; an additive which is a moisture-resistant etching (H 2 SO 4 +H 3 PO 4 ) mixture or dry-resistant The material of the etching (BCl 3 + Cl 2 + Ar) is SiO 2 or TiO 2 of nano-sized particles; and a solvent. The above materials such as moisture-resistant etching or dry etching may be SiO 2 or TiO 2 of nano-sized particles which have never been used or directly added to the transfer material in the conventional technique of sapphire patterning. These ingredients help the transfer pattern resist the etching conditions of high temperature and strong acid.

在該兩網版2上定義一轉印圖案31後,將該兩網版2吸附在藍 寶石晶圓1之第一面11以及第二面12上。 After defining a transfer pattern 31 on the two screens 2, the two screens 2 are adsorbed on the blue The first side 11 and the second side 12 of the gemstone wafer 1 are on the first side 11 and the second side 12.

接著請參考第五B圖,並以一固定手段22(本實施例是夾持兩 側緣的固定夾具)固定藍寶石晶圓1後,在該兩網版2塗佈上所需之該轉印材料3,利用兩刮板21朝同一方向前進,將所需的轉印圖案31轉印到藍寶石晶圓1之第一面11以及第二面12上,更佳地,其中轉印至該藍寶石晶圓1之該 轉印圖案3之厚度大於100μm,以符合修整粒所需之高度(通常需大於50μm)。 Next, please refer to the fifth B diagram and use a fixing means 22 (this embodiment is to clamp two After the sapphire wafer 1 is fixed by the fixing fixture of the side edge, the transfer material 3 required for coating on the two screens 2 is advanced in the same direction by the two squeegees 21, and the desired transfer pattern 31 is rotated. Printing onto the first side 11 and the second side 12 of the sapphire wafer 1, more preferably, the transfer to the sapphire wafer 1 The thickness of the transfer pattern 3 is greater than 100 μm to match the height required for trimming (usually greater than 50 μm).

上述轉印動作需要注意該第一面11之轉印材料3與第二面12 之轉印材料3成份上的差異,因為地心引力關係需要濃度不會相同,須按照使用者需求去調製、分配該轉印材料3。 The transfer operation requires attention to the transfer material 3 and the second surface 12 of the first surface 11 The difference in the composition of the transfer material 3 is because the concentration of the gravity is not the same, and the transfer material 3 must be prepared and distributed according to the user's needs.

接著請參考第五C圖,將該兩網版2取下,後續使用該固化 手段包括UV光、熱烤以及添加化學藥劑,即完成藍寶石晶圓1之雙面印刷之步驟。 Next, please refer to the fifth C diagram, the two screens 2 are removed, and the curing is subsequently used. The means include UV light, hot baking and addition of chemicals, that is, the step of performing double-sided printing of the sapphire wafer 1.

參閱第五D~五G圖,其顯示藍寶石碟片拋光墊修整器製造方 法之雙面印刷之蝕刻實施例圖。 Refer to the fifth D~5G diagram, which shows the manufacturer of the sapphire disc polishing pad conditioner. An example of an etched embodiment of a double-sided printing process.

參閱第五D圖,同時在藍寶石晶圓1之第一面11及第二面12 進行蝕刻,其中該蝕刻法包含乾式蝕刻法及濕式蝕刻法,此實施例以濕式蝕刻法為例。 Referring to the fifth D picture, at the same time on the first side 11 and the second side 12 of the sapphire wafer 1 The etching is performed, wherein the etching method includes a dry etching method and a wet etching method, and this embodiment is exemplified by a wet etching method.

參閱第五E圖,藍寶石晶圓1進行了一段時間之濕式蝕刻, 該轉印圖案31以及該具有特定軸向的藍寶石晶圓1皆被侵蝕一小部份,逐漸形成類錐柱體之微結構4。 Referring to Figure 5E, the sapphire wafer 1 was wet etched for a period of time. The transfer pattern 31 and the sapphire wafer 1 having a specific axial direction are all eroded by a small portion, and the microstructure 4 of the cone-like cylinder is gradually formed.

參閱第五F圖,當該蝕刻完成且形成完整的該微結構4後, 將該具有特定軸向的藍寶石晶圓1上之該轉印圖案31移除,並將第一面11及第二面12清洗乾淨。 Referring to the fifth F diagram, when the etching is completed and the complete microstructure 4 is formed, The transfer pattern 31 on the sapphire wafer 1 having a specific axial direction is removed, and the first surface 11 and the second surface 12 are cleaned.

參閱第五G圖,為該藍寶石碟片拋光墊修整器完成之剖面 圖,此為該微結構4中之對稱平頭錐柱41之實施例。 Refer to the fifth G diagram for the profile of the sapphire disc polishing pad finisher. This is an embodiment of a symmetrical flat-tipped cone 41 in the microstructure 4.

參閱第五G、六A~六C圖,為該藍寶石碟片拋光墊修整器完 成之多種實施例圖,第五G圖顯示微結構4為對稱平頭錐柱41之實施例圖, 第六A圖顯示微結構4為不對稱平頭錐柱42之實施例圖,第六B圖顯示微結構4為對稱尖頭錐柱43之實施例圖,第六C圖顯示微結構4為不對稱尖頭錐柱44之實施例圖。所述具有各種不同形狀微結構之雙面藍寶石碟片拋光墊修整器,皆可藉由前述之製程製備而得,包括選擇特定軸向之藍寶石晶圓、轉印材料的成分比例、蝕刻製程參數值的調整(溫度、時間等),在此不一一贅述,且該些圖示中的微結構之大小、高度、角度之比例等僅是為了方便了解,並非僅限於圖中所示之形狀。此種雙面具有微結構的藍寶石碟片拋光墊修整器在使用時可先使用其中一面,當該面的微結構逐漸鈍化失去修整功能後,可再使用另一面,相較於單面具有微結構的藍寶石碟片拋光墊修整器而言,更具經濟效益,且透過本發明所揭露之製程,亦改善了以黃光製程製備此種雙面具有微結構的藍寶石碟片拋光墊修整器所具有之缺點。 Refer to the fifth G, six A to six C drawings for the sapphire disc polishing pad finisher In the various embodiments, the fifth G diagram shows an embodiment of the microstructure 4 being a symmetric flat cone 41. Figure 6A shows an embodiment of the microstructure 4 as an asymmetric flat-tipped cone 42 , the sixth Figure B shows an embodiment of the microstructure 4 as a symmetric pointed cone 43 , and the sixth Figure C shows the microstructure 4 as An embodiment of a symmetrical pointed cone 44 is shown. The double-sided sapphire disc polishing pad conditioner having various microstructures of different shapes can be prepared by the foregoing process, including selecting a specific axial sapphire wafer, a composition ratio of the transfer material, and an etching process parameter. The adjustment of the value (temperature, time, etc.) is not repeated here, and the size, height, angle ratio, etc. of the microstructures in the illustrations are for convenience only, and are not limited to the shapes shown in the figures. . The double-sided micro-structured sapphire disc polishing pad dresser can use one side firstly when used, and when the microstructure of the surface is gradually passivated and the trimming function is lost, the other side can be used, compared with the single side. The sapphire disc polishing pad conditioner of the structure is more economical, and the process disclosed in the present invention also improves the preparation of the double-sided microstructured sapphire disc polishing pad dresser by a yellow light process. Has the shortcomings.

以上所述只為本發明專利具體實施之詳細說明及圖示,並非用來限制本發明專利,本發明專利之所有範圍應以下面申請專利範圍為基準,任何熟之該技藝者在本發明之領域內,可輕易聯想之變化或修飾,皆可涵蓋在本發明專利所界定之專利範圍內。 The above description is only for the detailed description and illustration of the specific embodiments of the present invention, and is not intended to limit the present invention. All the scope of the present invention should be based on the following patent claims, and any skilled person in the present invention Variations or modifications that can be readily associated in the art are encompassed within the scope of the patents defined by the present invention.

a~c‧‧‧步驟 a~c‧‧‧step

Claims (10)

一種藍寶石碟片拋光墊修整器之製造方法,其步驟包含:提供一具有特定軸向的藍寶石晶圓,該特定軸向為a軸向、c軸、r軸、m軸、n軸以及v軸的其中之一;以網版印刷之方式,使用一網版將一轉印圖案轉印至該藍寶石晶圓之至少一面,並藉由一固化手段固化該轉印圖案;以及進行一蝕刻法以在該藍寶石晶圓表面形成複數個具有特定形狀之微結構。 A method for manufacturing a sapphire disc polishing pad conditioner, the method comprising: providing a sapphire wafer having a specific axis, the a-axis, the c-axis, the r-axis, the m-axis, the n-axis, and the v-axis One of the screen printing methods, transferring a transfer pattern to at least one side of the sapphire wafer using a screen, and curing the transfer pattern by a curing means; and performing an etching method A plurality of microstructures having a specific shape are formed on the surface of the sapphire wafer. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中該轉印圖案之組成包括:一聚合物(polymer)或寡聚合物(oligomer)或聚合物單體(monomer);一光敏感起始劑(photoactive compound,PAC)或熱敏感應起始劑;一添加劑(additive),該添加劑為耐濕式蝕刻或耐乾式蝕刻之材料;以及一溶劑(solvent)。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the composition of the transfer pattern comprises: a polymer or an oligomer or a polymer monomer (monomer) a photoactive compound (PAC) or a heat sensitive induction initiator; an additive which is a material resistant to wet etching or dry etching; and a solvent. 如申請專利範圍第2項所述之藍寶石碟片拋光墊修整器之製造方法,其中該耐濕式蝕刻之材料為奈米級微粒之SiO2或TiO2The method for manufacturing a sapphire disc polishing pad conditioner according to claim 2, wherein the moisture-resistant etching material is SiO 2 or TiO 2 of nano-sized particles. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中更包括將該轉印圖案轉印至該藍寶石晶圓之一面,再將該轉印圖案轉印至該藍寶石晶圓之另一面。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, further comprising transferring the transfer pattern to one side of the sapphire wafer, and transferring the transfer pattern to the sapphire The other side of the wafer. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中更包括將該轉印圖案同時轉印至該藍寶石晶圓之兩面。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, further comprising simultaneously transferring the transfer pattern to both sides of the sapphire wafer. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中轉印至該藍寶石晶圓之該轉印圖案之厚度大於50μm。 The method of manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the transfer pattern transferred to the sapphire wafer has a thickness greater than 50 μm. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中轉印至該藍寶石晶圓之該轉印圖案之厚度最佳地係大於100μm。 The method of manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the transfer pattern transferred to the sapphire wafer has a thickness of more than 100 μm. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中該網版為天然網布、合成網布或金屬網布。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the screen is a natural mesh, a synthetic mesh or a metal mesh. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中該蝕刻法包含乾式蝕刻法及濕式蝕刻法。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the etching method comprises a dry etching method and a wet etching method. 如申請專利範圍第1項所述之藍寶石碟片拋光墊修整器之製造方法,其中該等微結構之形狀為對稱平頭錐柱、對稱尖頭錐柱、不對稱平頭錐柱,或不對稱尖頭錐柱。 The method for manufacturing a sapphire disc polishing pad conditioner according to claim 1, wherein the microstructures are symmetrical flat cones, symmetric pointed cones, asymmetric flat cones, or asymmetric tips. Head cone column.
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