TW201501207A - Light pipe window structure for thermal chamber applications and processes - Google Patents

Light pipe window structure for thermal chamber applications and processes Download PDF

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Publication number
TW201501207A
TW201501207A TW103120190A TW103120190A TW201501207A TW 201501207 A TW201501207 A TW 201501207A TW 103120190 A TW103120190 A TW 103120190A TW 103120190 A TW103120190 A TW 103120190A TW 201501207 A TW201501207 A TW 201501207A
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Taiwan
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light pipe
transparent plate
window structure
pipe window
substrate
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TW103120190A
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Chinese (zh)
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TWI644362B (en
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Joseph M Ranish
Aaron Muir Hunter
Hwajin Andrew Chang
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Applied Materials Inc
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Publication of TWI644362B publication Critical patent/TWI644362B/en

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Abstract

A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.

Description

用於熱腔室應用及製程的光管窗口結構 Light pipe window structure for thermal chamber applications and processes

在此揭示用於半導體處理的設備與方法。更特定而言,在此揭示的實施例關於用於半導體基材的熱處理的光管結構。 Apparatus and methods for semiconductor processing are disclosed herein. More particularly, the embodiments disclosed herein relate to a light pipe structure for heat treatment of a semiconductor substrate.

半導體工業中普遍實施熱處理。半導體基材係以許多變形的方式經受熱處理,包括閘極源、汲極和通道結構的沉積、摻雜、活化及退火、矽化、晶化、氧化、與諸如此類者。經過了數年,熱處理的技術已經從簡單的爐烘烤發展到各種形式的漸增的快速熱處理(RTP)、尖峰退火、以及其他熱處理。 Heat treatment is commonly practiced in the semiconductor industry. Semiconductor substrates are subjected to heat treatment in a number of variations, including deposition of gate source, drain and channel structures, doping, activation and annealing, deuteration, crystallization, oxidation, and the like. After several years, heat treatment techniques have evolved from simple oven baking to various forms of incremental rapid thermal processing (RTP), spike annealing, and other heat treatments.

隨著半導體元件特徵的臨界尺寸持續縮小,需要更嚴格限制的熱製程期間的熱預算。許多前述熱製程利用燈頭形式的燈加熱,其中燈頭由複數個光源構成,該複數個光源係定位以引導輻射能量朝向基材。然而,被利用在燈頭中的高強度燈會在燈頭的材料內產生高溫。此溫度對於許多製程必須受到控制以能使基材冷卻。例如,在RTP期間,來自燈 的熱輻射大致上用以快速地加熱受控環境中的基材至高達約1350℃的最高溫度。此最高溫度被維持長達小於一秒至數分鐘範圍內(取決於製程)的特定時間。基材接著被冷卻到室溫,以為了進行進一步的處理。為了能冷卻到室溫,燈頭必須被冷卻。然而,由於許多因素,燈頭的溫度的控制是難以達成。此外,在傳統燈頭中,光源的輻照圖案有時候是不規則的,這會產生不規則的基材加熱。 As the critical dimensions of semiconductor component features continue to shrink, more severely limited thermal budgets during thermal processing are required. Many of the foregoing thermal processes are heated by a lamp in the form of a lamp head, wherein the lamp head is comprised of a plurality of light sources positioned to direct radiant energy toward the substrate. However, high intensity lamps that are utilized in the base create high temperatures within the material of the base. This temperature must be controlled for many processes to cool the substrate. For example, during the RTP, from the light The thermal radiation is generally used to rapidly heat the substrate in a controlled environment to a maximum temperature of up to about 1350 °C. This maximum temperature is maintained for a specific time ranging from less than one second to several minutes (depending on the process). The substrate was then cooled to room temperature for further processing. In order to be able to cool to room temperature, the lamp head must be cooled. However, due to many factors, the control of the temperature of the lamp cap is difficult to achieve. Furthermore, in conventional bases, the illumination pattern of the source is sometimes irregular, which can result in irregular substrate heating.

需要一種可改善熱製程腔室中的燈頭的溫度控制的方法與設備。 There is a need for a method and apparatus that can improve the temperature control of a lamp cap in a thermal process chamber.

在此揭示的實施例關於用於半導體基材的熱處理的光管結構。 The embodiments disclosed herein relate to a light pipe structure for heat treatment of a semiconductor substrate.

在一實施例中,描述一種用於一熱製程腔室中的光管窗口結構。該光管窗口結構包括:一第一透明板;一第二透明板;複數個光管結構,該複數個光管結構設置在該第一透明板與該第二透明板之間且被黏接到該第一透明板與該第二透明板,該複數個光管結構的各個光管結構包含一透明材料且具有一縱向軸,該縱向軸設置成和該第一或第二透明板的一平面呈實質上正交關係;及一外殼,該外殼與該第一透明板和該第二透明板接合,並環繞該複數個光管結構。 In one embodiment, a light pipe window structure for use in a thermal processing chamber is described. The light pipe window structure comprises: a first transparent plate; a second transparent plate; a plurality of light pipe structures, wherein the plurality of light pipe structures are disposed between the first transparent plate and the second transparent plate and are bonded And to the first transparent plate and the second transparent plate, each of the light pipe structures of the plurality of light pipe structures comprises a transparent material and has a longitudinal axis, and the longitudinal axis is disposed with one of the first or second transparent plates The plane is substantially orthogonal; and a housing that engages the first transparent plate and the second transparent plate and surrounds the plurality of light pipe structures.

在另一實施例中,描述一種用於一熱製程腔室中的光管窗口結構。該光管窗口結構包括:一第一透明板;一第二透明板,該第二透明板設置成和該第一透明板呈一實質上平行關係;及複數個光管結構,該複數個光管結構設置在該 第一透明板與該第二透明板之間,其中該第一透明板的厚度比該第二透明板的厚度更厚。 In another embodiment, a light pipe window structure for use in a thermal processing chamber is described. The light pipe window structure comprises: a first transparent plate; a second transparent plate, the second transparent plate is disposed in a substantially parallel relationship with the first transparent plate; and a plurality of light pipe structures, the plurality of light Tube structure is set in the Between the first transparent plate and the second transparent plate, wherein the thickness of the first transparent plate is thicker than the thickness of the second transparent plate.

在另一實施例中,提供一種基材製程腔室。該製程腔室包括:一腔室,該腔室具有一內部空間;一光管窗口結構,該光管窗口結構耦接到該腔室,該光管窗口結構具有一第一透明板,該第一透明板和該腔室的該內部空間連通;及一輻射熱源,該輻射熱源在該腔室的該內部空間外面的一位置耦接到該光管窗口結構的一第二透明板,其中該光管窗口結構包括設置在該第一透明板與該第二透明板之間的複數個光管結構。 In another embodiment, a substrate processing chamber is provided. The process chamber includes: a chamber having an internal space; a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate, the first a transparent plate is in communication with the inner space of the chamber; and a radiant heat source coupled to a second transparent plate of the light pipe window structure at a position outside the inner space of the chamber, wherein the radiant heat source The light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.

100‧‧‧製程腔室 100‧‧‧Processing chamber

101‧‧‧光管窗口結構 101‧‧‧Light pipe window structure

102‧‧‧基材支撐件 102‧‧‧Substrate support

104‧‧‧腔室主體 104‧‧‧ Chamber body

105‧‧‧燈頭組件 105‧‧‧Light head assembly

106‧‧‧輻射熱源 106‧‧‧radiation heat source

108‧‧‧側壁 108‧‧‧ side wall

110‧‧‧底部 110‧‧‧ bottom

112‧‧‧頂部 112‧‧‧ top

114‧‧‧第一透明板 114‧‧‧First transparent board

115‧‧‧第二透明板 115‧‧‧Second transparent board

116‧‧‧近接感測器 116‧‧‧ proximity sensor

117‧‧‧溫度感測器 117‧‧‧temperature sensor

118‧‧‧定子組件 118‧‧‧stator assembly

119‧‧‧轉子 119‧‧‧Rotor

120‧‧‧內部空間 120‧‧‧Internal space

121‧‧‧支撐環 121‧‧‧Support ring

122‧‧‧致動器組件 122‧‧‧Actuator assembly

123‧‧‧殼體 123‧‧‧Shell

124‧‧‧控制器 124‧‧‧ Controller

126‧‧‧記憶體 126‧‧‧ memory

127‧‧‧管 127‧‧‧ tube

128‧‧‧支援電路 128‧‧‧Support circuit

130‧‧‧CPU 130‧‧‧CPU

132‧‧‧導引螺栓 132‧‧‧ Guide bolt

134‧‧‧凸緣 134‧‧‧Flange

138‧‧‧馬達 138‧‧‧Motor

140‧‧‧基材 140‧‧‧Substrate

144‧‧‧升降銷 144‧‧‧lifting pin

148‧‧‧基材接取埠 148‧‧‧Substrate access

158‧‧‧螺帽 158‧‧‧ nuts

159‧‧‧殼體 159‧‧‧Shell

160‧‧‧光管結構 160‧‧‧Light pipe structure

162‧‧‧能量源 162‧‧‧Energy source

164‧‧‧控制系統 164‧‧‧Control system

168‧‧‧驅動線圈組件 168‧‧‧ drive coil assembly

170‧‧‧懸置線圈組件 170‧‧‧suspension coil assembly

180‧‧‧冷卻塊 180‧‧‧cooling block

181A‧‧‧入口 181A‧‧‧ entrance

181B‧‧‧出口 181B‧‧‧Export

182‧‧‧冷卻劑源 182‧‧‧ coolant source

184‧‧‧冷卻劑通道 184‧‧‧ coolant passage

200‧‧‧密封住的內部空間 200‧‧‧ sealed interior space

205‧‧‧輸入埠 205‧‧‧ Input 埠

207‧‧‧空隙 207‧‧‧ gap

210‧‧‧輸出埠 210‧‧‧ Output埠

215‧‧‧冷卻劑源 215‧‧‧ coolant source

220‧‧‧間隙 220‧‧‧ gap

300‧‧‧功率源 300‧‧‧Power source

305A‧‧‧外區 305A‧‧‧Outside

305B‧‧‧內區 305B‧‧‧ Inner District

310‧‧‧密封件 310‧‧‧Seal

315‧‧‧冷卻劑源 315‧‧‧ coolant source

400‧‧‧製程腔室 400‧‧‧Processing chamber

402‧‧‧背側 402‧‧‧ Back side

404‧‧‧基材支撐件 404‧‧‧Substrate support

405‧‧‧升降銷 405‧‧‧lifting pin

406‧‧‧上圓頂 406‧‧‧Upper dome

408‧‧‧基部環 408‧‧‧ base ring

410‧‧‧裝設凸緣 410‧‧‧Flange

412‧‧‧製程區域 412‧‧‧Process area

414‧‧‧沖洗區域 414‧‧‧ flushing area

415‧‧‧中心桿 415‧‧‧ center pole

416‧‧‧凹部 416‧‧‧ recess

418‧‧‧密封件 418‧‧‧Seal

420‧‧‧夾持環 420‧‧‧ clamping ring

422‧‧‧圓形遮件 422‧‧‧ Round cover

424‧‧‧線性組件 424‧‧‧linear components

426‧‧‧光學高溫計 426‧‧‧Optical pyrometer

428‧‧‧元件側 428‧‧‧ component side

430‧‧‧反射件 430‧‧‧reflector

432‧‧‧埠 432‧‧‧埠

434‧‧‧通道 434‧‧‧ channel

436‧‧‧製程氣體源 436‧‧‧Process gas source

438‧‧‧製程氣體入口 438‧‧‧Process gas inlet

440‧‧‧流動路徑 440‧‧‧Flow path

442‧‧‧流動路徑 442‧‧‧Flow path

444‧‧‧氣體出口 444‧‧‧ gas export

446‧‧‧真空泵 446‧‧‧vacuum pump

448‧‧‧沖洗氣體源 448‧‧‧ flushing gas source

450‧‧‧沖洗氣體入口 450‧‧‧ flushing gas inlet

452‧‧‧流動路徑 452‧‧‧Flow path

454‧‧‧流動路徑 454‧‧‧Flow path

460‧‧‧度量光管 460‧‧‧ Measure light pipe

462‧‧‧感測器 462‧‧‧ sensor

464‧‧‧光纖光纜 464‧‧‧Fiber optic cable

500‧‧‧光管窗口結構 500‧‧‧Light pipe window structure

505‧‧‧第一板 505‧‧‧ first board

510‧‧‧環圈區塊 510‧‧‧ ring block

515‧‧‧中心結構 515‧‧‧ central structure

520‧‧‧第二板 520‧‧‧ second board

525‧‧‧表面 525‧‧‧ surface

600‧‧‧光管窗口結構 600‧‧‧Light pipe window structure

610‧‧‧環圈區塊 610‧‧‧ ring block

612‧‧‧幅條 612‧‧‧Strips

可藉由參考實施例來詳細暸解本發明的更特定說明,本發明的上述特徵簡短地在前面概述過,其中本發明的一些實施例在附圖中示出。但是應注意的是,附圖僅示出本發明的典型實施例,因此附圖不應被視為會對本發明的範疇構成限制,這是因為本發明可允許其他等效的實施例。 The more specific description of the present invention may be understood in detail by reference to the embodiments, which are briefly described in the foregoing. It is to be understood, however, that the appended claims

第1圖是製程腔室的簡化立體圖,該製程腔室具有光管窗口結構的一實施例。 Figure 1 is a simplified perspective view of a process chamber having an embodiment of a light pipe window structure.

第2A-2C圖是顯示第1圖的光管窗口結構的一實施例的各種視圖。 2A-2C is a view showing an embodiment of the light pipe window structure of Fig. 1.

第3圖是第1圖的製程腔室的一部分的側面剖視圖,而顯示出光管窗口結構與燈頭組件。 Figure 3 is a side cross-sectional view of a portion of the process chamber of Figure 1 showing the light pipe window structure and the lamp cap assembly.

第4圖是製程腔室的示意剖視圖,而顯示光管窗口結構的另一實施例。 Figure 4 is a schematic cross-sectional view of the process chamber showing another embodiment of the light pipe window structure.

第5圖是光管窗口結構的另一實施例的一部分的示意圖。 Figure 5 is a schematic illustration of a portion of another embodiment of a light pipe window structure.

第6圖是光管窗口結構的另一實施例的一部分的示意圖。 Figure 6 is a schematic illustration of a portion of another embodiment of a light pipe window structure.

為促進瞭解,在可能時使用相同的元件符號來表示該等圖式共有的相同元件。可設想出的是一實施例的元件與特徵可有利地被併入到其他實施例中而不需特別詳述。 To promote understanding, the same element symbols are used where possible to indicate the same elements that are common to the drawings. It is contemplated that elements and features of an embodiment may be beneficially incorporated into other embodiments without particular detail.

在此揭示的實施例係關於用於熱製程腔室(諸如沉積腔室、蝕刻腔室、退火腔室、植入腔室、用於發光二極體形成的腔室、及其他製程腔室)的光管窗口結構。光管窗口結構可被用在可從美國加州聖大克勞拉市的應用材料公司取得的製程腔室,且亦可被用在亦能從其他製造業者取得的製程腔室。 Embodiments disclosed herein relate to use in thermal processing chambers (such as deposition chambers, etching chambers, annealing chambers, implantation chambers, chambers for LED formation, and other processing chambers) Light pipe window structure. The light pipe window structure can be used in a process chamber available from Applied Materials, Inc. of Santa Clara, Calif., and can also be used in process chambers that are also available from other manufacturers.

第1圖是根據一實施例的快速熱製程腔室(RTP腔室)100的簡化示意圖,該快速熱製程腔室100具有光管窗口結構101。製程腔室100包括非接觸或磁性懸浮的基材支撐件102與腔室主體104,腔室主體104具有界定內部空間120的側壁108、底部110與頂部112。側壁108典型地包括基材接取埠148,以促進基材140的進入與退出(第1圖顯示基材接取埠148的一部分)。接取埠148可耦接到傳送腔室(未示出)或負載閉鎖腔室(未示出),且能以閥(諸如狹縫閥(未示出))來選擇性地被密封住。在一實施例中,基材支撐件102為環形且其尺寸可在基材支撐件102的內徑中容納燈頭組件105。燈頭組件 105包括光管窗口結構101與輻射熱源106。 1 is a simplified schematic diagram of a rapid thermal processing chamber (RTP chamber) 100 having a light pipe window structure 101 in accordance with an embodiment. The process chamber 100 includes a non-contact or magnetically suspended substrate support 102 and a chamber body 104 having sidewalls 108, a bottom portion 110 and a top portion 112 that define an interior space 120. The sidewalls 108 typically include a substrate pick-up 148 to facilitate entry and exit of the substrate 140 (Fig. 1 shows a portion of the substrate pick-up 148). The pick-up 148 can be coupled to a transfer chamber (not shown) or a load lock chamber (not shown) and can be selectively sealed with a valve, such as a slit valve (not shown). In an embodiment, the substrate support 102 is annular and sized to receive the cap assembly 105 in the inner diameter of the substrate support 102. Lamp assembly 105 includes a light pipe window structure 101 and a radiant heat source 106.

基材支撐件102適於在內部空間120內磁性地懸浮與旋轉。基材支撐件102能在處理期間垂直地升高與降低時旋轉,且亦可在處理之前、期間或之後被升高或降低而不旋轉。這樣的磁性懸浮與/或磁性旋轉。可避免或最小化由於相對移動的部件之間的部件旋轉與/或接觸(其典型地需要用以升高/降低與/或旋轉基材支撐件)的消失或減少所造成的粒子產生。 The substrate support 102 is adapted to magnetically float and rotate within the interior space 120. The substrate support 102 can be vertically raised and lowered during processing, and can also be raised or lowered without rotation prior to, during, or after processing. Such magnetic suspension and/or magnetic rotation. Particle generation due to the disappearance or reduction of component rotation and/or contact between the relatively moving components, which typically requires raising/lowering and/or rotating the substrate support, can be avoided or minimized.

定子組件118環繞腔室主體104的側壁108且耦接到一或更多個致動器組件122,該一或更多個致動器組件122係控制定子組件118沿著腔室主體104的外部的高度。在一實施例(未示出)中,製程腔室100包括三個繞著腔室主體而徑向地設置(例如以約120度的角度繞著腔室主體104)的致動器組件122。定子組件118磁性地耦接到設置在腔室主體104的內部空間120內的基材支撐件102。基材支撐件102可包含或包括作為轉子119的磁性部分,因此產生磁性軸承組件以升降與/或旋轉該基材支撐件102。支撐環121耦接到轉子119,以支撐基材140的周圍邊緣。支撐環121的尺寸可使支撐環121能穩定地支撐基材140,同時能最小地遮蔽基材140的背側的部分而免於受到輻射熱源106所放射的能量。定子組件118包括被堆疊在懸置線圈組件170上的驅動線圈組件168。驅動線圈組件168適於旋轉與/或升高/降低該基材支撐件102,而懸置線圈組件170可適於將該基材支撐件102被動地置中在製程腔室100內。或者,可藉由具有單一線圈組件 的定子來執行旋轉與置中功能。 The stator assembly 118 surrounds the sidewall 108 of the chamber body 104 and is coupled to one or more actuator assemblies 122 that control the stator assembly 118 along the exterior of the chamber body 104 the height of. In an embodiment (not shown), the process chamber 100 includes three actuator assemblies 122 that are radially disposed about the chamber body (e.g., around the chamber body 104 at an angle of about 120 degrees). The stator assembly 118 is magnetically coupled to the substrate support 102 disposed within the interior space 120 of the chamber body 104. The substrate support 102 can include or include a magnetic portion that acts as the rotor 119, thus creating a magnetic bearing assembly to raise and lower and/or rotate the substrate support 102. A support ring 121 is coupled to the rotor 119 to support a peripheral edge of the substrate 140. The size of the support ring 121 allows the support ring 121 to stably support the substrate 140 while minimizing the portion of the back side of the substrate 140 from the energy radiated by the radiant heat source 106. The stator assembly 118 includes a drive coil assembly 168 that is stacked on the suspension coil assembly 170. The drive coil assembly 168 is adapted to rotate and/or raise/lower the substrate support 102, and the suspension coil assembly 170 can be adapted to passively center the substrate support 102 within the process chamber 100. Alternatively, by having a single coil assembly The stator is used to perform the rotation and centering functions.

在一實施例中,各個致動器組件122大致上包含被耦接在兩個凸緣134之間的精準導引螺栓132,其中該些凸緣134從腔室主體104的側壁108延伸。導引螺栓132具有螺帽158,螺帽158在螺栓旋轉時會沿著導引螺栓132軸向地行進。耦接件136被放置在定子組件118與螺帽158之間,並且將螺帽158耦接到定子組件118,以致當導引螺栓132被旋轉時,耦接件136會沿著導引螺栓132移動,以控制定子組件118在和耦接件136之界面處的高度。因此,當該些致動器組件122的一致動器組件的導引螺栓132被旋轉以產生其他致動器組件的各螺帽158之間的相對位移時,致動器組件118的水平平面會相對於腔室主體104的中心軸改變。 In an embodiment, each actuator assembly 122 generally includes precision guide bolts 132 that are coupled between two flanges 134 that extend from sidewalls 108 of the chamber body 104. The guide bolt 132 has a nut 158 that will travel axially along the guide bolt 132 as the bolt rotates. The coupling 136 is placed between the stator assembly 118 and the nut 158 and couples the nut 158 to the stator assembly 118 such that when the guide bolt 132 is rotated, the coupling 136 will follow the guide bolt 132 Move to control the height of the stator assembly 118 at the interface with the coupling 136. Thus, when the guide bolts 132 of the actuator assemblies of the actuator assemblies 122 are rotated to create relative displacement between the nuts 158 of the other actuator assemblies, the horizontal plane of the actuator assembly 118 would It changes with respect to the central axis of the chamber body 104.

在一實施例中,馬達138(諸如步進或伺服馬達)耦接到導引螺栓132,以回應於控制器124發出的訊號而提供可控制的旋轉。或者,其他類型的致動器組件122可用以控制定子組件118的線性位置,諸如氣動汽缸、液壓汽缸、滚珠螺杆、電磁線圈、線性致動器與凸輪從動件、與諸如此類者。 In an embodiment, a motor 138, such as a stepper or servo motor, is coupled to the guide bolt 132 to provide a controllable rotation in response to a signal from the controller 124. Alternatively, other types of actuator assemblies 122 may be used to control the linear position of the stator assembly 118, such as pneumatic cylinders, hydraulic cylinders, ball screws, solenoids, linear actuators and cam followers, and the like.

可適於受益自在此所揭示的實施例的RTP腔室的實例是可從位在美國加州聖大克勞拉市的應用材料公司取得的VANTAGE®、VULCAN®、與CENTURA®處理系統。儘管設備被描述成併同快速熱製程腔室以及磊晶沉積腔室來使用,在此揭示的實施例可被用在使用燈加熱元件以為了加熱的其他處理系統與裝置。 An example of an RTP chamber that may be adapted to benefit from the embodiments disclosed herein is the VANTAGE ® , VULCAN ® , and CENTURA ® processing systems available from Applied Materials, Inc., of Santa Clara, California. Although the apparatus is described as being used with a rapid thermal processing chamber and an epitaxial deposition chamber, the embodiments disclosed herein can be used in other processing systems and devices that use lamp heating elements for heating.

光管窗口結構101包括由可使熱和各種波長的光(其 可包括紅外線(IR)光譜中的光)透過的材料製成的第一透明板114與第二透明板115。第一透明板114與第二透明板115具有設置在第一透明板114與第二透明板115之間的複數個光管結構160。該複數個光管結構的各個光管結構可包括柱形結構與諸如此類的形狀者。第一透明板與第二透明板可具有實質上均勻的厚度且可具有實心截面。例如第一透明板114與第二透明板115可不具有穿孔。光管結構160被提供作為來自輻射熱源106的複數個能量源162的光子能穿過的光管,以在處理期間加熱基材140。在一實施例中,各個光管結構160在一般狀態下可具有全內反射(total internal reflection,TIR)性質。 The light pipe window structure 101 includes light that can be heated and of various wavelengths (its The first transparent plate 114 and the second transparent plate 115 may be made of a material that transmits light in an infrared (IR) spectrum. The first transparent plate 114 and the second transparent plate 115 have a plurality of light pipe structures 160 disposed between the first transparent plate 114 and the second transparent plate 115. Each of the light pipe structures of the plurality of light pipe structures may include a cylindrical structure and the like. The first transparent plate and the second transparent plate may have a substantially uniform thickness and may have a solid cross section. For example, the first transparent plate 114 and the second transparent plate 115 may have no perforations. The light pipe structure 160 is provided as a light pipe through which photons of a plurality of energy sources 162 from the radiant heat source 106 pass to heat the substrate 140 during processing. In an embodiment, each of the light pipe structures 160 may have total internal reflection (TIR) properties under normal conditions.

製程腔室100亦包括一或更多個近接感測器116,該一或更多個近接感測器116大致上適於偵測腔室主體104的內部空間120內的基材支撐件102(或基材140)的高度。感測器116可耦接到腔室主體104與/或製程腔室100的其他部分,且適於提供能指示基材支撐件102與腔室主體104的頂部112與/或底部110之間的距離的輸出,且亦可偵測基材支撐件102與/或基材140的失對準。 The process chamber 100 also includes one or more proximity sensors 116 that are generally adapted to detect the substrate support 102 within the interior space 120 of the chamber body 104 ( Or the height of the substrate 140). The sensor 116 can be coupled to the chamber body 104 and/or other portions of the process chamber 100 and is adapted to provide an indication between the substrate support 102 and the top 112 and/or bottom 110 of the chamber body 104. The output of the distance can also detect misalignment of the substrate support 102 and/or the substrate 140.

燈頭組件105可包括輻射熱源106與光管窗口結構101兩者。光管窗口結構101可包括至少部分地環繞光管窗口結構101的外殼159。輻射熱源106包括由殼體123形成的燈組件,燈組件包括複數個緊密地間隔的管127。該些管127可被形成為蜂巢狀光管配置。各個管127可含有反射件與一個高強度能量源162,該高強度能量源162可以是燈、雷射、 雷射二極體、發光二極體、IR發射器、或上述的組合。各個管127可和光管窗口結構101的各個光管結構160實質上軸向地對準。光管結構160用以傳送由各個能量源162所放射朝向基材140的能量。在一實施例中,燈頭組件105提供足夠的輻射能量以熱處理該基材140,例如退火設置在基材上140上的矽層。燈頭組件105可更包含環狀區,其中被控制器124供應到該複數個能量源162的電壓可被改變,以提升來自燈頭組件105的能量的徑向分佈。基材140的加熱的動態控制會受到該一或更多個溫度感測器117影響(在下文將更詳細地描述),其中該一或更多個溫度感測器117係測量遍佈基材140的溫度。 The base assembly 105 can include both a radiant heat source 106 and a light pipe window structure 101. The light pipe window structure 101 can include a housing 159 that at least partially surrounds the light pipe window structure 101. The radiant heat source 106 includes a light assembly formed by a housing 123 that includes a plurality of closely spaced tubes 127. The tubes 127 can be formed in a honeycomb light tube configuration. Each tube 127 can include a reflector and a high intensity energy source 162, which can be a lamp, a laser, A laser diode, a light emitting diode, an IR emitter, or a combination of the above. Each tube 127 can be substantially axially aligned with the respective light pipe structure 160 of the light pipe window structure 101. The light pipe structure 160 is used to transfer energy radiated by the respective energy sources 162 toward the substrate 140. In one embodiment, the cap assembly 105 provides sufficient radiant energy to heat treat the substrate 140, such as annealing a layer of tantalum disposed on the substrate 140. The base assembly 105 can further include an annular region in which the voltage supplied by the controller 124 to the plurality of energy sources 162 can be varied to increase the radial distribution of energy from the base assembly 105. Dynamic control of the heating of the substrate 140 may be affected by the one or more temperature sensors 117 (described in more detail below), wherein the one or more temperature sensors 117 are measured throughout the substrate 140 temperature.

在一實施例中,第一透明板114與第二透明板115皆由石英材料(即非晶二氧化矽)製成,儘管可使用能透過能量(諸如紅外線光譜中的波長)的其他材料(諸如玻璃、藍寶石、鋁矽酸鹽與玻璃)。第一透明板114與第二透明板115可由具有低包含容忍(inclusion tolerance)的清晰熔融的石英材料製成。在此所使用的詞語「透明」係指一物質,該物質在該物質的體積內不會顯著地改變經選擇的電磁輻射的波長範圍的方向或強度。在一實例中,經選擇的電磁輻射的波長範圍的平均方向變化小於數度,且平均強度減少小於約70%。 In one embodiment, both the first transparent plate 114 and the second transparent plate 115 are made of a quartz material (ie, amorphous ceria), although other materials that transmit energy (such as wavelengths in the infrared spectrum) can be used ( Such as glass, sapphire, aluminosilicate and glass). The first transparent plate 114 and the second transparent plate 115 may be made of a clear molten quartz material having a low inclusion tolerance. As used herein, the term "transparent" refers to a substance that does not significantly alter the direction or intensity of the wavelength range of selected electromagnetic radiation within the volume of the substance. In one example, the average direction change in the wavelength range of the selected electromagnetic radiation is less than a few degrees and the average intensity reduction is less than about 70%.

第一透明板114包括耦接到第一透明板114的上表面的複數個升降銷144,以促進基材進入或退出製程腔室100的傳送。例如,定子組件118可被致動以向下移動,這使得轉子119朝向燈頭組件105移動。在此所使用的任何方向(諸 如「向下」或「往下」以及「向上」或「往上」)是基於腔室如圖所示中的方位且可能不是實際上真實的方向。 The first transparent plate 114 includes a plurality of lift pins 144 coupled to the upper surface of the first transparent plate 114 to facilitate transfer of the substrate into or out of the process chamber 100. For example, the stator assembly 118 can be actuated to move downward, which causes the rotor 119 to move toward the base assembly 105. Any direction used here (the Such as "down" or "down" and "up" or "up" are based on the orientation of the chamber as shown and may not be actually true.

支撐基材140的支撐環121隨著轉子119移動。在期望的高度處,基材140接觸設置在第一透平板114上的升降銷144。轉子119(與支撐環121)的向下移動會持續,直到轉子119環繞燈頭組件105的外殼159。轉子119(與支撐環121)的向下移動會持續,直到支撐環121與穩定地被支撐在升降銷144上的基材140相隔一距離。升降銷144的高度可經選擇以沿著一平面支撐與對準基材140,其中該平面與基材接取埠148的平面共平面或鄰近基材接取埠148的平面。該複數個升降銷144可被定位在該些光管結構160之間且徑向地彼此相隔,以促進終端效應器(未示出)通過基材接取埠148。或者,終端效應器與/或機械人能夠可以水平且垂直移動,以促進基材140的傳送。該複數個升降銷144的各個升降銷144可被定位在該些光管結構160之間,以最小化來自輻射熱源106的能量的吸收。該複數個升降銷144的各個升降銷144可由和用於第一透明板114相同的材料(諸如石英材料)製成。 The support ring 121 of the support substrate 140 moves with the rotor 119. At a desired height, the substrate 140 contacts the lift pins 144 disposed on the first through plate 114. The downward movement of the rotor 119 (and the support ring 121) continues until the rotor 119 surrounds the outer casing 159 of the base assembly 105. The downward movement of the rotor 119 (and the support ring 121) continues until the support ring 121 is spaced a distance from the substrate 140 that is stably supported on the lift pins 144. The height of the lift pins 144 can be selected to support and align the substrate 140 along a plane that is coplanar with the plane of the substrate 148 or adjacent to the plane of the substrate 148. The plurality of lift pins 144 can be positioned between the light pipe structures 160 and radially spaced apart from each other to facilitate end effector (not shown) from picking up the turns 148 through the substrate. Alternatively, the end effector and/or robot can be moved horizontally and vertically to facilitate transfer of the substrate 140. Each of the lift pins 144 of the plurality of lift pins 144 can be positioned between the light pipe structures 160 to minimize absorption of energy from the radiant heat source 106. Each of the lift pins 144 of the plurality of lift pins 144 may be made of the same material as the first transparent plate 114, such as a quartz material.

製程腔室100亦包括控制器124,控制器124大致上包括中央處理單元(CPU)130、支援電路128、與記憶體126。CPU 130可以是可用在工業設備中以控制各種動作的任何形式的電腦處理器和次處理器之一。記憶體126或電腦可讀媒體可以是一或更多個可輕易獲得的記憶體,諸如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟、或任何其他形式的數位儲存器,無論是當地的或遠端的皆可,且典型地耦 接到CPU 130。支援電路128耦接到CPU 130,而以傳統方式來支援控制器124。這些電路包括快取、功率供應器、時脈電路、輸入/輸出電路、子系統、與諸如此類者。 The process chamber 100 also includes a controller 124 that generally includes a central processing unit (CPU) 130, a support circuit 128, and a memory 126. The CPU 130 can be one of any form of computer processor and secondary processor that can be used in an industrial device to control various actions. The memory 126 or computer readable medium can be one or more readily available memories, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form. Digital storage, either local or remote, and typically coupled Received to the CPU 130. Support circuit 128 is coupled to CPU 130 to support controller 124 in a conventional manner. These circuits include caches, power supplies, clock circuits, input/output circuits, subsystems, and the like.

氛圍控制系統164亦耦接到腔室主體104的內部空間120。氛圍控制系統164大致上包括節流閥與真空泵,以控制腔室壓力。氛圍控制系統164可額外地包括氣體源,以提供製程或其他氣體到內部空間120。氛圍控制系統164亦可適於輸送用於熱沉積製程的製程氣體。在處理期間,內部空間120大致上被維持在真空壓力。本發明揭示的態樣包括實施例,其中燈頭組件105至少部分地設置在內部空間120中(且在內部空間120中經受負壓力),而燈頭組件105的一部分位在內部空間120的外面(即處於外界氛圍)。此配置提供有效率的能量傳送給基材140,同時能提升控制輻射熱源106的溫度的能力。 The ambience control system 164 is also coupled to the interior space 120 of the chamber body 104. The ambience control system 164 generally includes a throttle valve and a vacuum pump to control the chamber pressure. The ambience control system 164 can additionally include a gas source to provide a process or other gas to the interior space 120. The atmosphere control system 164 can also be adapted to deliver process gases for the thermal deposition process. The interior space 120 is substantially maintained at vacuum pressure during processing. Aspects of the present disclosure include embodiments in which the cap assembly 105 is at least partially disposed in the interior space 120 (and subjected to negative pressure in the interior space 120), while a portion of the cap assembly 105 is positioned outside of the interior space 120 (ie, In the outside atmosphere). This configuration provides efficient energy transfer to the substrate 140 while improving the ability to control the temperature of the radiant heat source 106.

製程腔室100亦包括一或更多個溫度感測器117,該一或更多個溫度感測器117適於感測基材140在處理之前、期間與之後的溫度。在第1圖所示的實施例中,該些溫度感測器117設置成穿過頂部112,儘管可使用位在腔室主體104內且圍繞腔室主體104的其他位置。該些溫度感測器117可以是光學高溫計,例如具有光纖探針的高溫計。該些感測器117可適於以能感測基材的全部直徑或基材的一部分的組態耦接到頂部112。該些感測器117可包含實質上等於基材直徑的界定感測區域或實質上等於基材半徑的感測區域的圖案。例如,複數個感測器117能以徑向或線性組態耦接到頂 部112,以產生橫跨基材的半徑或直徑的感測區域。在一實施例(未示出)中,複數個感測器117可設置在一線中,該線從約頂部112的中心徑向地延伸到頂部112的周圍部分。以此方式,基材的半徑可受到該些感測器117監控,這可使得基材的半徑在旋轉期間的感測成為可能。 The process chamber 100 also includes one or more temperature sensors 117 adapted to sense the temperature of the substrate 140 before, during, and after processing. In the embodiment illustrated in FIG. 1, the temperature sensors 117 are disposed through the top portion 112, although other locations within the chamber body 104 and surrounding the chamber body 104 may be utilized. The temperature sensors 117 can be optical pyrometers, such as pyrometers with fiber optic probes. The sensors 117 can be adapted to be coupled to the top portion 112 in a configuration that senses the full diameter of the substrate or a portion of the substrate. The sensors 117 can include a pattern that defines a sensing region that is substantially equal to the diameter of the substrate or a sensing region that is substantially equal to the radius of the substrate. For example, a plurality of sensors 117 can be coupled to the top in a radial or linear configuration. Portion 112 to create a sensing region across the radius or diameter of the substrate. In an embodiment (not shown), a plurality of sensors 117 can be disposed in a line that extends radially from a center of the top portion 112 to a surrounding portion of the top portion 112. In this manner, the radius of the substrate can be monitored by the sensors 117, which can enable sensing of the radius of the substrate during rotation.

製程腔室100亦包括冷卻塊180,冷卻塊180鄰近、耦接到、或被形成在頂部112中。大致上,冷卻塊180和燈頭組件105隔開且面對燈頭組件105。冷卻塊180包含耦接到入口181A和出口181B的一或更多個冷卻劑通道184。冷卻塊180可由製程抗性材料製成,諸如不銹鋼、鋁、聚合物、或陶瓷材料。冷卻劑通道184可包含螺旋圖案、矩形圖案、圓形圖案、或上述的組合,並且通道184可整合式地被形成在冷卻塊180內,例如藉由澆鑄冷卻塊180與/或從兩個或更多個部件來製造冷卻塊180且將這些部件接合。額外地或替代地,冷卻劑通道184可被鑽孔到冷卻塊180內。可藉由閥與適當的配管將入口181A與出口181B耦接到冷卻劑源182,並且冷卻劑源182和控制器124連通以促進壓力與/或設置在冷卻劑源182中的流體的流動的控制。該流體可以是水、乙二醇、氮(N2)、氦(He)、或作為熱交換媒介的其他流體。 The process chamber 100 also includes a cooling block 180 that is adjacent, coupled to, or formed in the top portion 112. In general, the cooling block 180 is spaced apart from the base assembly 105 and faces the base assembly 105. Cooling block 180 includes one or more coolant passages 184 that are coupled to inlet 181A and outlet 181B. The cooling block 180 can be made of a process resistant material such as stainless steel, aluminum, polymer, or ceramic material. The coolant passages 184 may comprise a spiral pattern, a rectangular pattern, a circular pattern, or a combination of the above, and the channels 184 may be integrally formed within the cooling block 180, such as by casting a cooling block 180 and/or from two or More components are used to make the cooling block 180 and join the components. Additionally or alternatively, the coolant passage 184 can be drilled into the cooling block 180. The inlet 181A and the outlet 181B can be coupled to the coolant source 182 by a valve and appropriate piping, and the coolant source 182 and the controller 124 communicate to promote pressure and/or flow of fluid disposed in the coolant source 182. control. The fluid can be water, ethylene glycol, nitrogen (N 2 ), helium (He), or other fluids as a heat exchange medium.

如在此所述,製程腔室100適於以「面向上(face-up)」的方位接收基材,其中基材的沉積物接收側或面被定向成朝向冷卻塊180且基材的「背側」面對燈頭組件105。「面向上」方位可容許來自燈頭組件105的能量更快速地被基材140吸收,這是因為基材的背側比基材的面更不會反射。 As described herein, the process chamber 100 is adapted to receive a substrate in a "face-up" orientation wherein the deposit receiving side or face of the substrate is oriented toward the cooling block 180 and the substrate The back side faces the base assembly 105. The "face up" orientation allows the energy from the lamp cap assembly 105 to be absorbed more quickly by the substrate 140 because the back side of the substrate is less reflective than the face of the substrate.

第2A-2C圖是顯示可被用在第1圖的製程腔室100中的光管窗口結構101的一實施例的各種視圖。第2A圖是光管窗口結構101的部分爆炸圖。第2B圖是沿著第2A圖的線2B-2B的光管窗口結構101的剖視圖。第2C圖是沿著第2B圖的線2C-2C的光管窗口結構101的剖視圖。第1圖中所示的升降銷144沒有在第2A-2C圖中示出。 2A-2C is a various view showing an embodiment of a light pipe window structure 101 that can be used in the process chamber 100 of FIG. Figure 2A is a partial exploded view of the light pipe window structure 101. Fig. 2B is a cross-sectional view of the light pipe window structure 101 taken along line 2B-2B of Fig. 2A. Figure 2C is a cross-sectional view of the light pipe window structure 101 along line 2C-2C of Figure 2B. The lift pins 144 shown in Fig. 1 are not shown in the second A-2C diagram.

光管窗口結構101包括外殼159、第一透明板114、第二透明板115、與光管結構160,光管結構160被夾置在第一透明板114與第二透明板115之間。如圖所示,第一透明板114可以是耦接到外殼的實心平坦的構件。第二透明板115可以是類似第一透明板114的實心平坦的構件。第一透明板114與第二透明板115兩者皆可由光學透明材料(諸如石英或藍寶石)製成。同樣地,外殼159可由光學透明材料(諸如石英)製成。在此所使用的詞語「光學透明」是材料傳送輻射(例如光波或用以加熱其他物件的其他波長,且尤其是可見光譜中的波長以及諸如紅外線(IR)光譜中的非可見波長)的能力。第一透明板114與第二透明板115兩者皆可藉由擴散焊接製程或其他適當的接合方法來接合。該些光管結構160的各個光管結構160可以是實心,諸如由光學透明材料(例如和第一透明板114與第二透明板115相同的材料(即熔融石英或藍寶石))製成的桿。或者,光管結構160的至少一部分可以是由光學透明材料(諸如石英或藍寶石)製成的空心管。 The light pipe window structure 101 includes a casing 159, a first transparent plate 114, a second transparent plate 115, and a light pipe structure 160, and the light pipe structure 160 is sandwiched between the first transparent plate 114 and the second transparent plate 115. As shown, the first transparent plate 114 can be a solid, flat member that is coupled to the outer casing. The second transparent plate 115 may be a solid flat member like the first transparent plate 114. Both the first transparent plate 114 and the second transparent plate 115 may be made of an optically transparent material such as quartz or sapphire. Likewise, the outer casing 159 can be made of an optically transparent material such as quartz. As used herein, the term "optically transparent" is the ability of a material to transmit radiation (eg, light waves or other wavelengths used to heat other objects, and especially wavelengths in the visible spectrum, such as non-visible wavelengths in the infrared (IR) spectrum). . Both the first transparent plate 114 and the second transparent plate 115 can be joined by a diffusion soldering process or other suitable bonding method. The individual light pipe structures 160 of the light pipe structures 160 may be solid, such as rods made of an optically transparent material such as the same material as the first transparent plate 114 and the second transparent plate 115 (ie, fused silica or sapphire). . Alternatively, at least a portion of the light pipe structure 160 can be a hollow tube made of an optically transparent material such as quartz or sapphire.

光管結構160的截面可包括圓形、矩形、三角形、菱形、或上述的組合、或其他多角形與/或不規則形。在平面 圖中,該些光管結構160的各個光管結構160可包括實質上平行的邊緣(如第2C圖所示),或聚集或偏離的邊緣以致圓錐形被形成在平面圖中。 The cross section of the light pipe structure 160 may include a circle, a rectangle, a triangle, a diamond, or a combination thereof, or other polygonal and/or irregular shapes. In the plane In the figures, the individual light pipe structures 160 of the light pipe structures 160 may include substantially parallel edges (as shown in FIG. 2C), or gathered or offset edges such that the conical shape is formed in a plan view.

形成光管窗口結構101的方法包括切鋸光學透明材料的塊體,以產生該些光管結構160。光學透明材料的板能在特定角度與深度精準地被切鋸,以產生如上所討論在截面中具有多角形的該些光管結構160。若使用線鋸(wire saw),線可被操作成位在一平面中,該平面平行於該板的主表面。口鉅(kerf)可被用以形成環繞該些光管結構160的空隙。在材料中將該些光管結構160形成到特定深度係提供第一透明板114或第二透明板115的一者使其能整合到該些光管結構。其他透明板可藉由接合製程(諸如陶瓷焊接技術、密封玻璃黏接、擴散焊接製程、或其他適當的接合方法)被接合到該些光管結構160。當光學透明材料的桿或空心管用於作為該些光管結構160時,該些光管結構160可藉由接合製程(諸如陶瓷焊接技術、密封玻璃黏接、擴散焊接製程、或其他適當的接合方法)被接合到第一透明板114與第二透明板115的一者或兩者。圖上顯示該些光管結構160具有圓形的截面,但是在一些實施例中,該些光管結構160的至少一部分的截面形狀可以是多角形。在一實施例中,該些光管結構160的緊密堆聚配置的尺寸和空間係經設計而能實質上和輻射熱源160的該些管127的各個管127(如第1圖所示)軸向對準。然而,該些管127與該些光管結構160之間的一些失對準亦可被用以提供高功率強度與良好的空間解析。又,如上所述,在一些傳 統的燈頭中,幅照圖案是不規則的,這可能是由於燈中的製造變化所造成。然而,在一些實施例中,光管窗口結構101的該些光管結構160亦可在目標平面(即被加熱的基材的表面)處產生更平滑的幅照圖案,因此使得燈頭組件105就不會受到燈與燈之間的製造差異所影響。 The method of forming the light pipe window structure 101 includes cutting a block of optically transparent material to produce the light pipe structures 160. The plates of optically transparent material can be accurately sawed at a particular angle and depth to produce the light pipe structures 160 having a polygonal shape in cross section as discussed above. If a wire saw is used, the wire can be manipulated to lie in a plane that is parallel to the major surface of the panel. A kerf can be used to form a void around the light pipe structures 160. Forming the light pipe structures 160 into a particular depth system provides one of the first transparent plate 114 or the second transparent plate 115 to be integrated into the light pipe structures. Other transparent plates may be joined to the light pipe structures 160 by a bonding process such as ceramic soldering techniques, sealing glass bonding, diffusion soldering processes, or other suitable bonding methods. When rods or hollow tubes of optically transparent material are used as the light pipe structures 160, the light pipe structures 160 may be joined by a bonding process (such as ceramic soldering techniques, sealing glass bonding, diffusion soldering processes, or other suitable bonding). The method) is bonded to one or both of the first transparent plate 114 and the second transparent plate 115. The light pipe structures 160 are shown as having a circular cross-section, but in some embodiments, at least a portion of the light pipe structures 160 may have a polygonal cross-sectional shape. In one embodiment, the closely packed configuration of the light pipe structures 160 is sized and spaced to substantially align with the individual tubes 127 (shown in FIG. 1) of the tubes 127 of the radiant heat source 160. Aligned. However, some misalignment between the tubes 127 and the light pipe structures 160 can also be used to provide high power strength and good spatial resolution. Again, as mentioned above, in some biography In the base of the lamp, the pattern of the picture is irregular, which may be caused by manufacturing changes in the lamp. However, in some embodiments, the light pipe structures 160 of the light pipe window structure 101 can also produce a smoother pattern at the target plane (ie, the surface of the heated substrate), thus causing the base assembly 105 to It is not affected by manufacturing variations between the lamp and the lamp.

如第2B圖所示,該些光管結構160的各個光管結構160包括縱向軸A,縱向軸A實質上垂直於第一透明板114與第二透明板115的一者或兩者的平面。當第一透明板114與第二透明板115耦接到外殼159時,密封住的內部空間200可被容納在外殼159的內部側壁內,以及在該些光管結構160、該第一透明板114、與該第二透明板之間的空隙207內。在一些實施例中,外殼159可包括輸入埠205與輸出埠210。輸入埠205與輸出埠210可耦接到冷卻劑源215,冷卻劑源215使流體循環通過密封住的內部空間200以及該些光管結構160之間的空隙207,以為了冷卻光管窗口結構101。該流體可以是水、乙二醇、氮(N2)、氦(He)、或作為熱交換媒介的其他流體。小間隙220(如第2C圖所示)提供流體在該些光管結構160周圍的流動,以促進該些光管結構160的各個光管結構160的冷卻。額外地或替代地,為了使冷卻流體流動通過輸入埠205與輸出埠210,輸入埠205與輸出埠210的一者或兩者可耦接到真空泵(如第2B圖所示),以為了提供更低的壓力到密封住的內部空間200以及該些光管結構160之間的空隙207和間隙220。真空泵可被用以降低密封住的內部空間200與空隙207中的壓力,藉此降低內部空間120與密封住的 內部空間200之間的壓降。 As shown in FIG. 2B, each of the light pipe structures 160 of the light pipe structures 160 includes a longitudinal axis A that is substantially perpendicular to a plane of one or both of the first transparent plate 114 and the second transparent plate 115. . When the first transparent plate 114 and the second transparent plate 115 are coupled to the outer casing 159, the sealed inner space 200 can be received in the inner side wall of the outer casing 159, and the light pipe structure 160, the first transparent plate 114, in the gap 207 between the second transparent plate. In some embodiments, the housing 159 can include an input port 205 and an output port 210. The input port 205 and the output port 210 can be coupled to a coolant source 215 that circulates fluid through the sealed interior space 200 and the gap 207 between the tube structures 160 for cooling the light pipe window structure 101. The fluid can be water, ethylene glycol, nitrogen (N 2 ), helium (He), or other fluids as a heat exchange medium. A small gap 220 (as shown in FIG. 2C) provides flow of fluid around the light pipe structures 160 to facilitate cooling of the individual light pipe structures 160 of the light pipe structures 160. Additionally or alternatively, in order for the cooling fluid to flow through the input port 205 and the output port 210, one or both of the input port 205 and the output port 210 may be coupled to a vacuum pump (as shown in FIG. 2B) for Lower pressure is applied to the sealed interior space 200 and the gaps 207 and gaps 220 between the tube structures 160. A vacuum pump can be used to reduce the pressure in the sealed interior space 200 and void 207, thereby reducing the pressure drop between the interior space 120 and the sealed interior space 200.

再次參照第1圖,第一透明板114可在腔室主體104的內部空間120中被暴露於低壓。第一透明板114所被暴露的壓力可以是80Torr、或更高的真空(諸如約5Torr至約10Torr)。將光管結構160黏接到第一透明板114與第二透明板115兩者提供了額外的結構堅硬性給第一透明板114,因此容許第一透明板114能忍受壓力差而不會失效。在一實施例中,如第2B圖所示,第一透明板114比第二透明板115更厚,以為了忍受內部空間120中的低壓。在一實施例中,第一透明板114的厚度可以是介於約7mm至約5mm。在一些實施例中,第一透明板114是第二透明板115的約兩倍厚。光管結構160可包括一主尺寸,該主尺寸可以是直徑且實質上等於輻射熱源106的管127的主尺寸(例如直徑)。在一實施例中,光管結構160的長度可以是約10mm至約80mm。 Referring again to FIG. 1, the first transparent plate 114 can be exposed to a low pressure in the interior space 120 of the chamber body 104. The pressure at which the first transparent plate 114 is exposed may be a vacuum of 80 Torr, or higher (such as from about 5 Torr to about 10 Torr). Bonding the light pipe structure 160 to both the first transparent plate 114 and the second transparent plate 115 provides additional structural rigidity to the first transparent plate 114, thus allowing the first transparent plate 114 to withstand pressure differentials without failure . In one embodiment, as shown in FIG. 2B, the first transparent plate 114 is thicker than the second transparent plate 115 in order to endure the low pressure in the interior space 120. In an embodiment, the first transparent plate 114 may have a thickness of between about 7 mm and about 5 mm. In some embodiments, the first transparent plate 114 is about twice as thick as the second transparent plate 115. The light pipe structure 160 can include a major dimension that can be a diameter and substantially equal to the major dimension (e.g., diameter) of the tube 127 of the radiant heat source 106. In an embodiment, the length of the light pipe structure 160 can be from about 10 mm to about 80 mm.

第3圖是第1圖的製程腔室100的一部分的側面剖視圖。在此圖中,基材140受到升降銷144與支撐環121支撐。基材140的位置可被用以於基材傳送到製程腔室100後在基材140上開始熱製程,其中該基材140在製程腔室100中可被輻射熱源106加熱。若支撐環121比基材140更熱,輻射熱源106的開放迴路加熱可被用以升高基材(受到支撐銷144支撐)的溫度以接近支撐環121的溫度,而為了避免基材140中的熱應力。當基材140被足夠地加熱,基材140可被傳送到支撐環,並且被升高遠離支撐銷144以容許基材140在處理期間的旋轉。 Fig. 3 is a side cross-sectional view showing a part of the process chamber 100 of Fig. 1. In this figure, the substrate 140 is supported by the lift pins 144 and the support ring 121. The location of the substrate 140 can be used to initiate a thermal process on the substrate 140 after the substrate is transferred to the process chamber 100, wherein the substrate 140 can be heated by the radiant heat source 106 in the process chamber 100. If the support ring 121 is hotter than the substrate 140, the open loop heating of the radiant heat source 106 can be used to raise the temperature of the substrate (supported by the support pins 144) to approach the temperature of the support ring 121, and to avoid heat in the substrate 140. stress. When the substrate 140 is sufficiently heated, the substrate 140 can be transferred to the support ring and raised away from the support pins 144 to allow for rotation of the substrate 140 during processing.

為了加熱基材140,輻射熱源106的能量源162被提供有來自功率源300的功率。功率源300可以是多區功率源,該多區功率源提供能量到輻射熱源106的能量源162的一或更多個群組。例如,第一或外區305A可包括位在殼體123的周邊上的能量源162的外組或能量源162的次組。類似地,第二或內區305B可包括位在外區305A內的能量源162的組或次組。在一實施例中,該些能量源162可被分隔成約十個同心區,該約十個同心區在密閉迴路加熱機制中個別地被控制。 To heat the substrate 140, the energy source 162 of the radiant heat source 106 is provided with power from the power source 300. Power source 300 can be a multi-zone power source that provides energy to one or more groups of energy sources 162 of radiant heat source 106. For example, the first or outer zone 305A can include an outer set of energy sources 162 or a secondary set of energy sources 162 located on the periphery of the housing 123. Similarly, the second or inner zone 305B can include a group or subgroup of energy sources 162 located within the outer zone 305A. In one embodiment, the energy sources 162 can be separated into approximately ten concentric regions that are individually controlled in a closed loop heating mechanism.

當加熱基材140時,燈頭組件105(尤其是輻射熱源106)經歷升高的溫度,並且輻射熱源106的溫度可根據在此所揭示的實施例適當地被控制。例如,燈頭組件105的至少一部分設置在製程腔室100的內部空間120的外面(即外界壓力),這提供了提升的輻射熱源106的溫度控制。改善的輻射熱源106的溫度控制促進更大的製程腔室100的效率。 When the substrate 140 is heated, the cap assembly 105 (especially the radiant heat source 106) experiences an elevated temperature, and the temperature of the radiant heat source 106 can be suitably controlled in accordance with the embodiments disclosed herein. For example, at least a portion of the base assembly 105 is disposed outside of the interior space 120 of the process chamber 100 (ie, ambient pressure), which provides temperature control of the elevated radiant heat source 106. The improved temperature control of the radiant heat source 106 promotes the efficiency of the larger process chamber 100.

在一實施例中,輻射熱源106耦接到冷卻劑源315,以促進提升的輻射熱源106的殼體123的冷卻。冷卻劑源315可以是冷卻劑,諸如水、乙二醇、氮(N2)、氦(H)、或作為熱交換媒介的其他流體。冷卻劑可被流動通過殼體123且在輻射熱源106的該些能量源162之間。 In an embodiment, radiant heat source 106 is coupled to coolant source 315 to facilitate cooling of housing 123 of elevated radiant heat source 106. The coolant source 315 may be a coolant such as water, ethylene glycol, nitrogen (N 2), helium (H), or other fluid as the heat exchange medium. Coolant may be flowed through the housing 123 and between the energy sources 162 of the radiant heat source 106.

第4圖示出製程腔室400的示意剖視圖,該製程腔室400具有設置在該製程腔室400上的光管窗口結構101的另一實施例。製程腔室400可被用以處理一或更多個基材,包括材料在基材140的上表面上的沉積。儘管在此沒有詳細 地討論,經沉積的材料可包括砷化鎵、氮化鎵、或氮化鋁鎵。製程腔室400可包括如在此所揭示的燈頭組件105,該燈頭組件105包括一陣列的能量源162以為了加熱(除了其他部件以外),基材支撐件404的背側402設置在製程腔室400內。基材支撐件404可以是碟形基材支撐件404(如圖所示),或可以是類似第1和3圖中所示的環形基材支撐件,該基材支撐件404從基材的邊緣404支撐基材,以促進基材能暴露於光管窗口結構101的熱輻射。在第4圖中,和第1-3圖中所描述的元件類似的元件係被使用類似的元件符號,並且除非特別指出,不然會類似地運作且為了簡短起見不再重複敘述。額外地,第4圖中所描述的光管窗口結構101的實施例可被用在第1和3圖的製程腔室100中,並且反之亦然。 FIG. 4 shows a schematic cross-sectional view of a process chamber 400 having another embodiment of a light pipe window structure 101 disposed on the process chamber 400. Process chamber 400 can be used to process one or more substrates, including deposition of material on the upper surface of substrate 140. Although not detailed here It is discussed that the deposited material may include gallium arsenide, gallium nitride, or aluminum gallium nitride. The process chamber 400 can include a base assembly 105 as disclosed herein that includes an array of energy sources 162 for heating (except for other components) with the back side 402 of the substrate support 404 disposed in the process chamber Inside the room 400. The substrate support 404 can be a dish-shaped substrate support 404 (as shown), or can be an annular substrate support similar to that shown in Figures 1 and 3, the substrate support 404 from the substrate The edge 404 supports the substrate to promote thermal radiation that the substrate can be exposed to the light pipe window structure 101. In FIG. 4, elements similar to those described in FIGS. 1-3 are used with similar element symbols, and unless otherwise specified, will operate similarly and will not be repeated for the sake of brevity. Additionally, embodiments of the light pipe window structure 101 depicted in FIG. 4 can be used in the process chamber 100 of FIGS. 1 and 3, and vice versa.

基材支撐件404設置在製程腔室400中而介於上圓頂406與光管窗口結構101的第一透明板114之間。上圓頂406、第一透明板114的上表面、及基部環408(設置在上圓頂406與光管窗口結構101的裝設凸緣410之間)大致上界定製程腔室400的內部區域。基材支撐件404大致上將製程腔室400的內部空間分隔成基材上方的製程區域與基材支撐件404下方的沖洗區域414。基材支撐件404在處理期間可被中心桿415旋轉,以最小化製程腔室400內的熱與製程氣體流動空間不規則性的效應,並因此促進均勻的基材140的處理。基材支撐件404被中心桿415支撐,中心桿415可在基材傳送過程期間與在一些情況的在基材140的處理期間於垂直方向(如箭頭所示)移動基材140。基材支撐件404可由碳化矽或被塗 覆有碳化矽的石墨形成,以吸收來自能量源162的輻射能量且將輻射能量傳導到基材140。複數個升降銷405可設置在製程腔室400中而位在中心桿415向外處。升降銷405可耦接到致動器(未示出),以在製程腔室400內相對於基材支撐件404且獨立於基材支撐件404之外垂直地移動升降銷405。基材140可經由裝載埠(未示出)被傳送到製程腔室400內且被定位在基材支撐件404上。第4圖顯示基材支撐件404處於升高處理位置,但可藉由致動器(未示出)將基材支撐件404垂直地移動到處理位置下方的裝載位置,以容許升降銷405接觸基材140且將基材140和基材支撐件404隔開。接著,機械人(未示出)可經由裝載埠進入製程腔室400以從製程腔室400接取與移除基材140。 The substrate support 404 is disposed in the process chamber 400 between the upper dome 406 and the first transparent plate 114 of the light pipe window structure 101. The upper dome 406, the upper surface of the first transparent plate 114, and the base ring 408 (disposed between the upper dome 406 and the mounting flange 410 of the light pipe window structure 101) substantially define the interior region of the custom process chamber 400 . The substrate support 404 substantially separates the interior space of the process chamber 400 into a process region above the substrate and a rinse region 414 below the substrate support 404. The substrate support 404 can be rotated by the center rod 415 during processing to minimize the effects of heat and process gas flow space irregularities within the process chamber 400, and thus promote uniform processing of the substrate 140. The substrate support 404 is supported by a central rod 415 that can move the substrate 140 in a vertical direction (as indicated by the arrows) during the substrate transfer process and in some cases during processing of the substrate 140. The substrate support 404 can be coated or coated with tantalum carbide Graphite coated with tantalum carbide is formed to absorb the radiant energy from the energy source 162 and conduct the radiant energy to the substrate 140. A plurality of lift pins 405 can be disposed in the process chamber 400 at a position outward of the center rod 415. The lift pin 405 can be coupled to an actuator (not shown) to vertically move the lift pin 405 within the process chamber 400 relative to the substrate support 404 and independently of the substrate support 404. Substrate 140 can be transferred into processing chamber 400 via a loading cassette (not shown) and positioned on substrate support 404. Figure 4 shows the substrate support 404 in a raised processing position, but the substrate support 404 can be moved vertically by an actuator (not shown) to a loading position below the processing position to allow the lift pin 405 to contact Substrate 140 and separate substrate 140 from substrate support 404. Next, a robot (not shown) can enter the process chamber 400 via the load port to pick up and remove the substrate 140 from the process chamber 400.

大致上,上圓頂406與第一透明板114是由光學透明材料(諸如上述所討論的石英材料或藍寶石材料)製成。在此實施例中,光管窗口結構101的第一透明板114包括凹部416,凹部416可提供額外的結構堅硬性給光管窗口結構101。凹部416提供凹面的或圓頂的形狀給光管窗口結構101,且可使得第一透明板114與第二透明板115的一者或兩者的更薄截面尺寸變為可能,以在同時運作於更低的壓力時能提供結構剛硬性。 Generally, the upper dome 406 and the first transparent plate 114 are made of an optically transparent material such as the quartz or sapphire material discussed above. In this embodiment, the first transparent plate 114 of the light pipe window structure 101 includes a recess 416 that provides additional structural rigidity to the light pipe window structure 101. The recess 416 provides a concave or dome shape to the light pipe window structure 101 and may enable a thinner cross-sectional dimension of one or both of the first transparent plate 114 and the second transparent plate 115 to operate simultaneously Provides structural rigidity at lower pressures.

在一實施例中,具有平坦的第一透明板114的光管窗口結構101的厚度可以是約40mm,而具有具凹面形狀(例如第4圖所示的凹部416)的第一透明板114的光管窗口結構101的厚度可以是約35mm。在一些實施例中,第一透明板 114是第二透明板115的約兩倍厚。至少光管窗口結構101的第一透明板114可耦接到裝設凸緣410,該裝設凸緣410可被耦接在側壁108與基部環408之間。密封件418(諸如O-環)可被用以將裝設凸緣410密封住到側壁108與基部環408。上圓頂406可利用設置在上圓頂以及基部環408與夾持環420之間的密封件418耦接到基部環408與夾持環420,以為了密封。 In one embodiment, the light pipe window structure 101 having the flat first transparent plate 114 may have a thickness of about 40 mm and a first transparent plate 114 having a concave shape (for example, the recess 416 shown in FIG. 4). The thickness of the light pipe window structure 101 can be about 35 mm. In some embodiments, the first transparent plate 114 is about twice as thick as the second transparent plate 115. At least the first transparent plate 114 of the light pipe window structure 101 can be coupled to the mounting flange 410 that can be coupled between the side wall 108 and the base ring 408. A seal 418, such as an O-ring, can be used to seal the mounting flange 410 to the sidewall 108 and the base ring 408. The upper dome 406 can be coupled to the base ring 408 and the clamp ring 420 with a seal 418 disposed between the upper dome and the base ring 408 and the clamp ring 420 for sealing.

能量源162可設以將基材140加熱到約200℃至約1600℃範圍內的溫度。各個能量源162可耦接到功率源300與控制器(如第3圖所示)。在處理期間或之後,燈頭組件105可被如圖所示及如第3圖所述的冷卻劑源315冷卻。替代地或額外地,燈頭組件105可藉由對流冷卻來冷卻。 Energy source 162 can be configured to heat substrate 140 to a temperature in the range of from about 200 °C to about 1600 °C. Each energy source 162 can be coupled to a power source 300 and a controller (as shown in FIG. 3). During or after processing, the base assembly 105 can be cooled by a coolant source 315 as shown and as illustrated in FIG. Alternatively or additionally, the cap assembly 105 can be cooled by convection cooling.

在一實施例中,光管結構160與能量源162的一者或兩者的至少一部分可朝製程腔室400的中心軸向內呈角度。例如,靠近中心桿415的光管結構160與/或能量源162可相對於第一透明板114的平面向內傾斜約30度至約45度,以引導輻射能量朝向基材支撐件404的中心區域(即中心桿415上方)。在一實例中,來自能量源162的至少一部分的輻射能量以相對於透明板114的平面的非正交角度通過透明板114。 In an embodiment, at least a portion of one or both of the light pipe structure 160 and the energy source 162 may be angled toward a central axis of the process chamber 400. For example, the light pipe structure 160 and/or energy source 162 near the center rod 415 can be inclined inwardly from about 30 degrees to about 45 degrees relative to the plane of the first transparent plate 114 to direct radiant energy toward the center of the substrate support 404. Area (ie above the center rod 415). In an example, radiant energy from at least a portion of energy source 162 passes through transparent plate 114 at a non-orthogonal angle relative to the plane of transparent plate 114.

圓形遮件422能可選地設置在基材支撐件404周圍。基部環408亦可被襯墊組件424環繞。遮件422係避免或最小化來自能量源162的熱/光訊號洩漏到基材140的元件側428上,同時提供製程氣體的預熱區。遮件422可由CVD、 SiC、被塗覆有SiC的燒結石墨、生長SiC、不透明石英、經塗覆的石英、或可抵擋製程與沖洗氣體造成的化學崩潰的任何類似的適當材料製成。襯墊組件424的尺寸經設計成能安置在基部環408的內圓周裡或被基部環408的內圓周環繞。襯墊組件424係遮蔽處理空間(即製程區域412與沖洗區域414)免於接觸製程腔室400的金屬壁。金屬壁會和前驅物反應且造成處理空間中的污染。儘管圖上顯示襯墊組件424是單一主體,襯墊組件424可包括一或更多個襯墊。 A circular cover 422 can optionally be disposed about the substrate support 404. The base ring 408 can also be surrounded by a cushion assembly 424. The mask 422 prevents or minimizes leakage of thermal/optical signals from the energy source 162 onto the component side 428 of the substrate 140 while providing a preheating zone for the process gas. The cover 422 can be CVD, SiC, sintered graphite coated with SiC, grown SiC, opaque quartz, coated quartz, or any similar suitable material that resists chemical collapse caused by the process and flushing gas. The cushion assembly 424 is sized to be disposed within or surrounded by the inner circumference of the base ring 408. The liner assembly 424 shields the processing space (i.e., the process region 412 from the rinse region 414) from contact with the metal walls of the process chamber 400. The metal wall reacts with the precursor and causes contamination in the processing space. Although the pad assembly 424 is shown as a single body, the pad assembly 424 can include one or more pads.

製程腔室400亦可包括光學高溫計426,以用於基材140上的溫度測量/控制。可在基材140的元件側428上執行光學高溫計426的溫度測量。因此,光學高溫計426可僅感測來自熱基材140的輻射,只有最少的來自能量源162的背景輻射會直接地抵達光學高溫計426。反射件430能可選地設置在上圓頂406外面,以將從基材140輻射的光反射回到基材140上。反射件430可被固定到夾持環420。反射件430可由金屬(諸如鋁或不銹鋼)製成。可藉由提供高反射塗層(諸如金(Au))來改善反射的效率。反射件430可具有連接到冷卻源(未示出)的一或更多個埠432。該些埠432可連接到通道434,該通道被形成在反射件430之中或之上。通道434設以使流體(諸如水)或氣體(諸如氦、氮、或其他氣體)流動,以冷卻反射件430。 Process chamber 400 may also include an optical pyrometer 426 for temperature measurement/control on substrate 140. Temperature measurement of the optical pyrometer 426 can be performed on the component side 428 of the substrate 140. Thus, optical pyrometer 426 can only sense radiation from thermal substrate 140, with minimal background radiation from energy source 162 reaching optical pyrometer 426 directly. Reflector 430 can optionally be disposed outside of upper dome 406 to reflect light radiated from substrate 140 back onto substrate 140. The reflector 430 can be fixed to the clamp ring 420. The reflection member 430 may be made of a metal such as aluminum or stainless steel. The efficiency of reflection can be improved by providing a highly reflective coating such as gold (Au). Reflector 430 can have one or more turns 432 that are connected to a cooling source (not shown). The turns 432 can be connected to a channel 434 that is formed in or on the reflector 430. The passage 434 is configured to flow a fluid such as water or a gas such as helium, nitrogen, or other gas to cool the reflector 430.

在一些實施例中,光管窗口結構101可包括被形成在的至少一部分光管窗口結構101中或設置成穿過光管窗口結構101的至少一部分的一或更多個度量光管460。度量光管 460可包含如在此所述的藍寶石或其他透明材料。在一實施例中,度量光管460被用以透過光纖光纜464和感測器462(諸如光學高溫計)耦接。度量光管460可具有約1mm至約2mm的直徑且設以被定位在該些光管結構160的至少一部分之間。度量光管460可具有從第一透明板114的表面延伸到設置在燈頭組件105的殼體123下方的度量光管460的末端的長度。在光管窗口結構101的的第一透明板114正下方的特定徑向位置或區域處具有一或更多個度量光管460(諸如一陣列的度量光管460)係容許在極靠近基材支撐件104與/或基材140的平面的位置處的溫度感測。度量光管460鄰近基材支撐件104與/或基材140係容許更小的測量位置,這能達到更精確的溫度控制。 In some embodiments, the light pipe window structure 101 can include one or more light pipes 460 that are formed in at least a portion of the light pipe window structure 101 or that are disposed through at least a portion of the light pipe window structure 101. Measuring light tube 460 can comprise sapphire or other transparent material as described herein. In one embodiment, the metering light pipe 460 is used to couple through the fiber optic cable 464 and a sensor 462, such as an optical pyrometer. The metrology light pipe 460 can have a diameter of from about 1 mm to about 2 mm and is positioned to be positioned between at least a portion of the light pipe structures 160. The metering light pipe 460 can have a length that extends from the surface of the first transparent plate 114 to the end of the metering light pipe 460 disposed below the housing 123 of the base assembly 105. Having one or more metric light pipes 460 (such as an array of metric light pipes 460) at a particular radial location or region directly below the first transparent plate 114 of the light pipe window structure 101 is allowed to be in close proximity to the substrate Temperature sensing at the location of the support 104 and/or the plane of the substrate 140. Measuring the light pipe 460 adjacent to the substrate support 104 and/or the substrate 140 allows for a smaller measurement position, which enables more precise temperature control.

從製程氣體源436供應的製程氣體可經由被形成在基部環408的側壁中的製程氣體入口438被引導到製程區域412內。製程氣體入口438設以引導製程氣體於大致上徑向向內方向。在膜形成製程期間,基材支撐件404可被定位在處理位置(其中該處理位置鄰近且約為和製程氣體入口438相同的高度),而容許製程氣體以層流機制沿著流動路徑440向上地且環繞地流動越過基材140的上表面。製程氣體(沿著流動路徑442)經由設置在和製程氣體入口438相對的製程腔室400的側面上的氣體出口444離開製程區域412。可藉由耦接到氣體出口444的真空泵446來促進製程氣體經由氣體出口444的移除。由於製程氣體入口438與氣體出口444彼此對準且設置在約相同高度,咸信這樣的平行配置當與上圓頂406結 合時,可達到大致上平坦的越過基材140的均勻氣流。可透過基材支撐件404造成基材140的旋轉來提供進一步的徑向均勻性。 Process gas supplied from process gas source 436 can be directed into process region 412 via process gas inlet 438 formed in the sidewalls of base ring 408. The process gas inlet 438 is configured to direct the process gas in a generally radially inward direction. During the film formation process, the substrate support 404 can be positioned at a processing location (where the processing location is adjacent and approximately the same height as the process gas inlet 438), while allowing the process gas to flow up the flow path 440 in a laminar flow mechanism The ground and the surrounding flow flow over the upper surface of the substrate 140. Process gas (along flow path 442) exits process region 412 via a gas outlet 444 disposed on a side of process chamber 400 opposite process gas inlet 438. Removal of the process gas via the gas outlet 444 can be facilitated by a vacuum pump 446 coupled to the gas outlet 444. Since the process gas inlet 438 and the gas outlet 444 are aligned with each other and disposed at about the same height, such a parallel configuration is associated with the upper dome 406. In time, a substantially flat uniform gas flow across the substrate 140 can be achieved. Rotation of the substrate 140 can be caused by the substrate support 404 to provide further radial uniformity.

可經由可選的被形成在基部環408的側壁中的沖洗氣體入口450從沖洗氣體源448供應沖洗氣體到沖洗區域414。沖洗氣體入口450設置在製程氣體入口438下方的高度。若使用圓形遮件422或預熱環(未示出),圓形遮件或預熱環可設置在製程氣體入口438與沖洗氣體入口450之間。在任一種情況中,沖洗氣體入口450設以引導沖洗氣體於大致上徑向向內方向。在膜形成製程期間,基材支撐件404可被定位在一位置,以致沖洗氣體以層流機制沿著流動路徑452向下地且環繞地流動越過基材支撐件404的背側402。不受到任何特定理論限制,咸信沖洗氣體的流動可避免或實質上防止製程氣體流動進入沖洗區域414內、或減少製程氣體擴散進入沖洗區域414(即基材支撐件404下方的區域)。沖洗氣體(沿著流動路徑454)離開沖洗區域414,並且經由氣體出口444被耗盡流出製程腔室,其中該氣體出口444設置在和沖洗氣體入口450相對的製程腔室400的側面上。 The flushing gas may be supplied from the flushing gas source 448 to the flushing region 414 via an optional flushing gas inlet 450 formed in the sidewall of the base ring 408. The purge gas inlet 450 is disposed at a height below the process gas inlet 438. If a circular cover 422 or preheating ring (not shown) is used, a circular shield or preheat ring can be disposed between the process gas inlet 438 and the flushing gas inlet 450. In either case, the flushing gas inlet 450 is configured to direct the flushing gas in a generally radially inward direction. During the film formation process, the substrate support 404 can be positioned in a position such that the flushing gas flows downwardly and circumferentially along the flow path 452 across the back side 402 of the substrate support 404 in a laminar flow mechanism. Without being bound by any particular theory, the flow of the flushing purge gas may avoid or substantially prevent process gas from flowing into the flushing zone 414 or reducing process gas diffusion into the flushing zone 414 (i.e., the area below the substrate support 404). The flushing gas exits the flushing zone 414 (along the flow path 454) and is depleted out of the process chamber via the gas outlet 444, wherein the gas outlet 444 is disposed on the side of the process chamber 400 opposite the flushing gas inlet 450.

類似地,在沖洗製程期間,基材支撐件404可被定位在升高位置,以容許沖洗氣體能橫向地流動越過基材支撐件404的背側402。此技術領域中具有一般技藝的人士應瞭解的是圖上顯示的製程氣體入口、沖洗氣體入口與氣體出口僅為了說明目的,這是因為氣體入口或出口等的位置、尺寸、或數量可被調整以進一步促進均勻的材料在基材140上的沉 積。另一個選擇可以是經由製程氣體入口438來提供沖洗氣體。若希望的話,沖洗氣體入口450可設以引導沖洗氣體於向上方向,以將製程氣體限制在製程區域412中。 Similarly, during the flushing process, the substrate support 404 can be positioned in a raised position to allow the flushing gas to flow laterally across the back side 402 of the substrate support 404. It should be understood by those of ordinary skill in the art that the process gas inlet, flushing gas inlet and gas outlet shown in the figures are for illustrative purposes only, as the position, size, or number of gas inlets or outlets, etc., can be adjusted. To further promote the uniformity of the material on the substrate 140 product. Another option may be to provide flushing gas via process gas inlet 438. If desired, the purge gas inlet 450 can be configured to direct the purge gas in an upward direction to confine the process gas to the process region 412.

第5圖是光管窗口結構500的另一實施例的一部分的立體圖。圖上顯示光管窗口結構500具有第一板505,該第一板505可以是如上涉及光管窗口結構101所述的第一透明板114或第二透明板115的其中一者。此實施例中的光管窗口結構500包括環圈區塊510的形式的複數個光管結構,並且可包括可選的作為另一個光管結構的中心結構515。在一實施例中,該些環圈區塊510可以是同心的。該些環圈區塊510可平滑化來自各個能量源162(如第1和4圖所示)的輻射。中心結構515可具有圓柱、桿、或其他多角形的形式。相對的第二板520(其中第5圖顯示部分的第二板520)被接合到該些環圈區塊510的表面525(且當包括中心結構515時可包括中心結構515的最頂表面),以形成光管窗口結構500。該些環圈區塊510的至少一部分可以是完整的圈、或形成完整的圈的多個弧形片段。第二板520可以是如上涉及光管窗口結構101所述的第一透明板114或第二透明板115的其中一者。光管窗口結構500可併同第1、3和4圖中所述的製程腔室100或製程腔室400分別地被使用。當光管窗口結構500併同製程腔室400被使用時,可不需要中心結構515以及最內部環圈區塊510的一或更多者,以為了提供對中心桿415與升降銷405(如第4圖所示)的接取。 FIG. 5 is a perspective view of a portion of another embodiment of a light pipe window structure 500. The light pipe window structure 500 is shown with a first plate 505, which may be one of the first transparent plate 114 or the second transparent plate 115 as described above in relation to the light pipe window structure 101. The light pipe window structure 500 in this embodiment includes a plurality of light pipe structures in the form of loop blocks 510 and may include an optional central structure 515 as another light pipe structure. In an embodiment, the loop blocks 510 can be concentric. The loop blocks 510 can smooth the radiation from each of the energy sources 162 (as shown in Figures 1 and 4). The central structure 515 can have the form of a cylinder, a rod, or other polygonal shape. The opposing second panel 520 (where the second panel 520 of the portion of the fifth panel is shown) is joined to the surface 525 of the loop block 510 (and may include the topmost surface of the central structure 515 when the central structure 515 is included) To form a light pipe window structure 500. At least a portion of the loop blocks 510 can be a complete loop, or a plurality of arcuate segments forming a complete loop. The second plate 520 can be one of the first transparent plate 114 or the second transparent plate 115 as described above in relation to the light pipe window structure 101. The light pipe window structure 500 can be used in conjunction with the process chamber 100 or the process chamber 400 described in Figures 1, 3 and 4, respectively. When the light pipe window structure 500 is used with the process chamber 400, one or more of the center structure 515 and the innermost ring block 510 may not be needed in order to provide the center rod 415 and the lift pin 405 (eg, Pick up in Figure 4).

該些環圈區塊510與中心結構515(當被使用時)、及 第一板505和第二板520可由光學透明材料(諸如如上涉及光管窗口結構101所述的石英或藍寶石)製成。該些環圈區塊510與中心結構515(當被使用時)、及第一板505和第二板520可藉由接合製程(諸如陶瓷焊接技術、密封玻璃黏接、擴散焊接製程、或其他適當的接合方法)被耦接在一起。儘管第5圖沒有示出殼體(諸如在第2B、3和4圖中所述的外殼159),一殼體可被接合到及第一板505和第二板520,以提供被密封住的內部空間。在一實施例中,當第一板505和第二板520被接合到最外部環圈區塊510時,最外部環圈區塊510可被用以作為殼體。 The loop block 510 and the center structure 515 (when used), and The first plate 505 and the second plate 520 can be made of an optically transparent material such as quartz or sapphire as described above in relation to the light pipe window structure 101. The loop block 510 and the center structure 515 (when used), and the first plate 505 and the second plate 520 may be joined by a bonding process (such as ceramic soldering technology, sealing glass bonding, diffusion soldering process, or the like). The appropriate bonding methods are coupled together. Although FIG. 5 does not show a housing (such as the housing 159 described in FIGS. 2B, 3 and 4), a housing can be coupled to the first and second plates 505 and 520 to provide sealing. Interior space. In an embodiment, when the first plate 505 and the second plate 520 are joined to the outermost loop block 510, the outermost loop block 510 can be used as a housing.

第6圖是光管窗口結構600的另一實施例的一部分的立體圖。圖上顯示光管窗口結構600具有第一板505,該第一板505可以是如上涉及光管窗口結構101所述的第一透明板114或第二透明板115的其中一者。光管窗口結構600類似第5圖中所述的光管窗口結構500,差異在於設置在該些光管結構之間與/或設置成穿過(圖上顯示成虛線)該些光管結構的幅條612包含複數個環圈區塊610。相對的第二板620(其中第6圖顯示部分的第二板620)被接合到該些環圈區塊610的表面525(且當包括中心結構515時可包括中心結構515的最頂表面),以形成光管窗口結構600。該些環圈區塊610的至少一部分可以是完整的圈、或形成完整的圈的多個弧形片段,而具有幅條612設置在其之間。第二板620可以是如上涉及光管窗口結構101所述的第一透明板114或第二透明板115的其中一者。光管窗口結構600可併同第1、3和4圖中 所述的製程腔室100或製程腔室400被使用。當光管窗口結構600併同製程腔室400被使用時,可不需要中心結構515以及最內部環圈區塊610的一或更多者,以為了提供對中心桿415與升降銷405(如第4圖所示)的接取。 FIG. 6 is a perspective view of a portion of another embodiment of a light pipe window structure 600. The light pipe window structure 600 is shown with a first plate 505, which may be one of the first transparent plate 114 or the second transparent plate 115 as described above in relation to the light pipe window structure 101. The light pipe window structure 600 is similar to the light pipe window structure 500 described in FIG. 5, with the difference that it is disposed between the light pipe structures and/or is disposed to pass through (shown as a broken line on the figure) the light pipe structures. The spoke 612 includes a plurality of loop blocks 610. The opposing second panel 620 (where the second panel 620 of the portion of the display of FIG. 6) is joined to the surface 525 of the loop block 610 (and may include the topmost surface of the central structure 515 when including the central structure 515) To form a light pipe window structure 600. At least a portion of the loop blocks 610 can be a complete loop, or a plurality of arcuate segments forming a complete loop with a web 612 disposed therebetween. The second plate 620 can be one of the first transparent plate 114 or the second transparent plate 115 as described above in relation to the light pipe window structure 101. The light pipe window structure 600 can be combined with the first, third and fourth figures The process chamber 100 or process chamber 400 is used. When the light pipe window structure 600 is used with the process chamber 400, one or more of the center structure 515 and the innermost ring block 610 may not be needed in order to provide the center rod 415 and the lift pin 405 (eg, Pick up in Figure 4).

該些幅條612可被用以減少光管窗口結構600中的張應力。該些幅條612可從中心結構515徑向地向外延伸到最外部環圈區塊610。該些幅條612能以幾何對稱圖案(諸如約30度間隔、45度間隔、60度間隔、或90度間隔)而對稱地被定位在該些環圈區塊610之間或被定位成穿過該些環圈區塊610。該些環圈區塊610、該些幅條612、與該中心結構515(當被使用時)、及該第一板605和該第二板620可由光學透明材料(諸如如上涉及光管窗口結構101所述的石英或藍寶石)製成。該些環圈區塊610、該些幅條612、與該中心結構515(當被使用時)、及該第一板605和該第二板620可藉由接合製程(諸如陶瓷焊接技術、密封玻璃黏接、擴散焊接製程、或其他適當的接合方法)耦接在一起。儘管第6圖沒有示出殼體(諸如在第2B、3和4圖中所述的外殼159),一殼體可被接合到及第一板605和第二板620,以提供被密封住的內部空間。在一實施例中,當第一板605和第二板620被接合到最外部環圈區塊610時,最外部環圈區塊610可被用以作為殼體。 The spokes 612 can be used to reduce the tensile stress in the light pipe window structure 600. The spokes 612 can extend radially outward from the central structure 515 to the outermost loop block 610. The strips 612 can be symmetrically positioned between the loop blocks 610 or positioned to be worn in a geometrically symmetrical pattern (such as about 30 degree intervals, 45 degree intervals, 60 degree intervals, or 90 degree intervals). The loop blocks 610 are passed through. The loop blocks 610, the spokes 612, and the center structure 515 (when used), and the first plate 605 and the second plate 620 may be made of an optically transparent material (such as the light pipe window structure as described above) Made of quartz or sapphire 101. The loop blocks 610, the strips 612, the center structure 515 (when used), and the first plate 605 and the second plate 620 can be joined by a bonding process (such as ceramic soldering technology, sealing) Glass bonding, diffusion soldering processes, or other suitable bonding methods are coupled together. Although FIG. 6 does not show a housing (such as the housing 159 described in FIGS. 2B, 3 and 4), a housing can be coupled to the first plate 605 and the second plate 620 to provide sealing. Interior space. In an embodiment, when the first plate 605 and the second plate 620 are joined to the outermost loop block 610, the outermost loop block 610 can be used as a housing.

在此所述的光管窗口結構101、500和600的使用係容許燈頭組件105(如第3和4圖所示)設置在腔室內部空間的外面。在一些實施例中,在此所述的光管窗口結構101、500和600的第一透明板114提供製程腔室邊界(例如處理發生之 處的內部空間的邊界)。密封件(諸如O-環與諸如此類者)可被用以密封住腔室內部空間120並容許燈頭組件105設置在內部空間的外面。在此所述的光管窗口結構101、500和600的使用提供提升的燈頭組件105與殼體123(如第1、3和4圖)的冷卻,同時維持能量源162(如第1和4圖)的強度與/或輻射圖案。例如,若燈頭組件105設置在製程腔室的內部空間中,內部空間120中的低壓可最小化能量源162的對流冷卻。此外,若燈頭組件105設置在內部空間120中,低壓環境(及有時候與輕易離子化的氣體的結合)會造成燈頭組件105內的連接到能量源162的電子連接件的弧光(arcing)。 The use of the light pipe window structures 101, 500, and 600 described herein allows the lamp head assembly 105 (as shown in Figures 3 and 4) to be disposed outside of the interior of the chamber. In some embodiments, the first transparent plate 114 of the light pipe window structures 101, 500, and 600 described herein provides process chamber boundaries (eg, processing occurs) The boundary of the internal space). A seal, such as an O-ring and the like, can be used to seal the interior of the chamber space 120 and allow the base assembly 105 to be disposed outside of the interior space. The use of the light pipe window structures 101, 500, and 600 described herein provides for the cooling of the elevated lamp cap assembly 105 and the housing 123 (as in Figures 1, 3 and 4) while maintaining the energy source 162 (e.g., first and fourth) Figure) The intensity and / or radiation pattern. For example, if the base assembly 105 is disposed in the interior of the process chamber, the low pressure in the interior space 120 minimizes convective cooling of the energy source 162. Moreover, if the base assembly 105 is disposed in the interior space 120, a low pressure environment (and sometimes a combination with a readily ionized gas) can cause arcing of the electrical connections within the base assembly 105 that are coupled to the energy source 162.

儘管可藉由利用更低電壓的能量源162來減少弧光,在此所述的光管窗口結構101、500和600的實施例能達到更高電壓的能量源162的使用而不會產生弧光。因此,在此所述的光管窗口結構101、500和600的使用可達到燈頭組件105的對流冷卻,同時維持能量源162所提供的光學強度與圖案。此外,可利用更高電壓的能量源162(及更低的電流引出(current draw)),這具有許多優點。可用在燈頭組件105的低電流/更高電壓的能量源162係促進更快速與/或強化的基材140的加熱。此外,能量源162中更低的電流引出可達到更小的導體以及更小更強健的燈密封的使用,此兩者能節省金錢且最小化燈頭組件105中的空間的使用。 Although the arc can be reduced by utilizing a lower voltage energy source 162, embodiments of the light pipe window structures 101, 500, and 600 described herein can achieve the use of a higher voltage energy source 162 without arcing. Thus, the use of the light pipe window structures 101, 500, and 600 described herein can achieve convective cooling of the lamp cap assembly 105 while maintaining the optical intensity and pattern provided by the energy source 162. In addition, a higher voltage energy source 162 (and lower current draw) can be utilized, which has many advantages. The low current/higher voltage energy source 162 that can be used in the base assembly 105 promotes faster and/or enhanced heating of the substrate 140. Moreover, the lower current draw in energy source 162 can achieve the use of smaller conductors and smaller, more robust lamp seals, both of which can save money and minimize the use of space in the lamp cap assembly 105.

儘管上述說明係導向特定實施例,可設想出其他與進一步的實施例而不脫離本發明的基本範疇,並且本發明的範疇是由隨附的申請專利範圍來決定。 While the above description is directed to a particular embodiment, other and further embodiments may be devised without departing from the basic scope of the invention, and the scope of the invention is determined by the scope of the appended claims.

101‧‧‧光管窗口結構 101‧‧‧Light pipe window structure

105‧‧‧燈頭組件 105‧‧‧Light head assembly

106‧‧‧輻射熱源 106‧‧‧radiation heat source

108‧‧‧側壁 108‧‧‧ side wall

123‧‧‧殼體 123‧‧‧Shell

140‧‧‧基材 140‧‧‧Substrate

159‧‧‧殼體 159‧‧‧Shell

160‧‧‧光管結構 160‧‧‧Light pipe structure

162‧‧‧能量源 162‧‧‧Energy source

400‧‧‧製程腔室 400‧‧‧Processing chamber

402‧‧‧背側 402‧‧‧ Back side

404‧‧‧基材支撐件 404‧‧‧Substrate support

405‧‧‧升降銷 405‧‧‧lifting pin

406‧‧‧上圓頂 406‧‧‧Upper dome

408‧‧‧基部環 408‧‧‧ base ring

410‧‧‧裝設凸緣 410‧‧‧Flange

412‧‧‧製程區域 412‧‧‧Process area

414‧‧‧沖洗區域 414‧‧‧ flushing area

415‧‧‧中心桿 415‧‧‧ center pole

416‧‧‧凹部 416‧‧‧ recess

418‧‧‧密封件 418‧‧‧Seal

420‧‧‧夾持環 420‧‧‧ clamping ring

422‧‧‧圓形遮件 422‧‧‧ Round cover

424‧‧‧線性組件 424‧‧‧linear components

426‧‧‧光學高溫計 426‧‧‧Optical pyrometer

428‧‧‧元件側 428‧‧‧ component side

430‧‧‧反射件 430‧‧‧reflector

432‧‧‧埠 432‧‧‧埠

434‧‧‧通道 434‧‧‧ channel

436‧‧‧製程氣體源 436‧‧‧Process gas source

438‧‧‧製程氣體入口 438‧‧‧Process gas inlet

440‧‧‧流動路徑 440‧‧‧Flow path

442‧‧‧流動路徑 442‧‧‧Flow path

444‧‧‧氣體出口 444‧‧‧ gas export

446‧‧‧真空泵 446‧‧‧vacuum pump

448‧‧‧沖洗氣體源 448‧‧‧ flushing gas source

450‧‧‧沖洗氣體入口 450‧‧‧ flushing gas inlet

452‧‧‧流動路徑 452‧‧‧Flow path

454‧‧‧流動路徑 454‧‧‧Flow path

460‧‧‧度量光管 460‧‧‧ Measure light pipe

462‧‧‧感測器 462‧‧‧ sensor

464‧‧‧光纖光纜 464‧‧‧Fiber optic cable

Claims (23)

一種用於一熱製程腔室中的光管窗口結構,該光管窗口結構包含:一第一透明板;一第二透明板;複數個光管結構,該複數個光管結構設置在該第一透明板與該第二透明板之間且被黏接到該第一透明板與該第二透明板,該複數個光管結構的各個光管結構包含一透明材料且具有一縱向軸,該縱向軸設置成和該第一或第二透明板的一平面呈實質上正交關係;及一外殼,該外殼與該第一透明板和該第二透明板接合,並環繞該複數個光管結構。 A light pipe window structure for use in a thermal processing chamber, the light pipe window structure comprising: a first transparent plate; a second transparent plate; a plurality of light pipe structures, wherein the plurality of light pipe structures are disposed in the first a transparent plate and a second transparent plate are bonded to the first transparent plate and the second transparent plate. The respective light pipe structures of the plurality of light pipe structures comprise a transparent material and have a longitudinal axis. The longitudinal axis is disposed in a substantially orthogonal relationship with a plane of the first or second transparent plate; and an outer casing that engages the first transparent plate and the second transparent plate and surrounds the plurality of light pipes structure. 如請求項1所述之光管窗口結構,其中該第一透明板的厚度比該第二透明板的厚度更厚。 The light pipe window structure of claim 1, wherein the thickness of the first transparent plate is thicker than the thickness of the second transparent plate. 如請求項1所述之光管窗口結構,其中該第一透明板包括一凹部。 The light pipe window structure of claim 1, wherein the first transparent plate comprises a recess. 如請求項1所述之光管窗口結構,其中該複數個光管結構的各個光管結構包含複數個環圈區塊。 The light pipe window structure of claim 1, wherein each of the plurality of light pipe structures comprises a plurality of loop blocks. 如請求項4所述之光管窗口結構,更包含一或更多個幅條,該一或更多個幅條設置在該複數個環圈區塊之間。 The light pipe window structure of claim 4, further comprising one or more strips disposed between the plurality of loop blocks. 如請求項1所述之光管窗口結構,其中該複數個光管結構的各個光管結構包含一柱形結構。 The light pipe window structure of claim 1, wherein each of the plurality of light pipe structures comprises a cylindrical structure. 如請求項6所述之光管窗口結構,其中各個柱形結構包含一具有圓形截面的實心結構。 The light pipe window structure of claim 6, wherein each of the cylindrical structures comprises a solid structure having a circular cross section. 如請求項6所述之光管窗口結構,其中各個柱形結構包含一具有圓形截面的空心結構。 The light pipe window structure of claim 6, wherein each of the cylindrical structures comprises a hollow structure having a circular cross section. 如請求項1所述之光管窗口結構,其中該外殼包含一密封圍壁。 The light pipe window structure of claim 1, wherein the outer casing comprises a sealing enclosure. 一種用於一熱製程腔室中的光管窗口結構,該光管窗口結構包含:一第一透明板;一第二透明板,該第二透明板設置成和該第一透明板呈一實質上平行關係;及複數個光管結構,該複數個光管結構設置在該第一透明板與該第二透明板之間,其中該第一透明板的厚度比該第二透明板的厚度更厚。 A light pipe window structure for use in a thermal processing chamber, the light pipe window structure comprising: a first transparent plate; a second transparent plate, the second transparent plate being disposed to be substantially opposite to the first transparent plate An upper parallel relationship; and a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate, wherein the thickness of the first transparent plate is greater than the thickness of the second transparent plate thick. 如請求項10所述之光管窗口結構,其中該第一透明板包括一凹部。 The light pipe window structure of claim 10, wherein the first transparent plate comprises a recess. 如請求項10所述之光管窗口結構,其中該複數個光管結構的各個光管結構包含一或更多個環圈區塊。 The light pipe window structure of claim 10, wherein each of the plurality of light pipe structures comprises one or more loop blocks. 如請求項12所述之光管窗口結構,更包含一或更多個幅條,該一或更多個幅條設置在該一或更多個環圈區塊之間。 The light pipe window structure of claim 12, further comprising one or more webs disposed between the one or more loop blocks. 如請求項10所述之光管窗口結構,其中該複數個光管結構的各個光管結構包含一柱形結構。 The light pipe window structure of claim 10, wherein each of the plurality of light pipe structures comprises a cylindrical structure. 如請求項14所述之光管窗口結構,其中各個柱形結構包含一具有圓形截面的實心結構。 The light pipe window structure of claim 14, wherein each of the cylindrical structures comprises a solid structure having a circular cross section. 如請求項14所述之光管窗口結構,其中各個柱形結構包含一具有圓形截面的空心結構。 The light pipe window structure of claim 14, wherein each of the cylindrical structures comprises a hollow structure having a circular cross section. 一種製程腔室,包含:一腔室,該腔室具有一內部空間;一光管窗口結構,該光管窗口結構耦接到該腔室,該光管窗口結構具有一第一透明板,該第一透明板和該腔室的該內部空間連通;及一輻射熱源,該輻射熱源在該腔室的該內部空間外面的一位置耦接到該光管窗口結構的一第二透明板,其中該光管窗口結構包括設置在該第一透明板與該第二透明板之間的複 數個光管結構。 A process chamber includes: a chamber having an internal space; a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate, the light pipe window structure a first transparent plate in communication with the interior space of the chamber; and a radiant heat source coupled to a second transparent plate of the light pipe window structure at a location outside the interior space of the chamber, wherein The light pipe window structure includes a complex disposed between the first transparent plate and the second transparent plate Several light pipe structures. 如請求項17所述之製程腔室,其中該第一透明板包含一凹部。 The process chamber of claim 17, wherein the first transparent plate comprises a recess. 如請求項17所述之製程腔室,其中該複數個光管結構的各個光管結構包含一或更多個環圈區塊。 The process chamber of claim 17, wherein each of the plurality of light pipe structures comprises one or more loop blocks. 如請求項19所述之製程腔室,其中該光管窗口結構更包含一或更多個幅條,該一或更多個幅條設置在該一或更多個環圈區塊之間。 The process chamber of claim 19, wherein the light pipe window structure further comprises one or more webs disposed between the one or more loop blocks. 如請求項17所述之製程腔室,其中該複數個光管結構的各個光管結構包含一柱形結構。 The process chamber of claim 17, wherein each of the plurality of light pipe structures comprises a cylindrical structure. 如請求項21所述之製程腔室,其中各個柱形結構包含一具有圓形截面的實心結構。 The process chamber of claim 21, wherein each of the cylindrical structures comprises a solid structure having a circular cross section. 如請求項21所述之製程腔室,其中各個柱形結構包含一具有圓形截面的空心結構。 The process chamber of claim 21, wherein each of the cylindrical structures comprises a hollow structure having a circular cross section.
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TWI822284B (en) * 2017-11-03 2023-11-11 荷蘭商Asm Ip私人控股有限公司 Semiconductor processing apparatus

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US6284051B1 (en) * 1999-05-27 2001-09-04 Ag Associates (Israel) Ltd. Cooled window
US8986454B2 (en) * 2010-06-08 2015-03-24 Applied Materials, Inc. Window assembly for use in substrate processing systems

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI822284B (en) * 2017-11-03 2023-11-11 荷蘭商Asm Ip私人控股有限公司 Semiconductor processing apparatus

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