TW201500578A - Thin film deposition apparatus having supply unit - Google Patents
Thin film deposition apparatus having supply unit Download PDFInfo
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- TW201500578A TW201500578A TW102124860A TW102124860A TW201500578A TW 201500578 A TW201500578 A TW 201500578A TW 102124860 A TW102124860 A TW 102124860A TW 102124860 A TW102124860 A TW 102124860A TW 201500578 A TW201500578 A TW 201500578A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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Abstract
Description
本發明涉及一種具備供給單元的薄膜沉積裝置，更為詳細地涉及一種具備能夠易於調節向氣化單元供給的原料量的供給單元的薄膜沉積裝置。The present invention relates to a thin film deposition apparatus including a supply unit, and more particularly to a thin film deposition apparatus including a supply unit capable of easily adjusting the amount of raw material supplied to the vaporization unit.
太陽能電池（Solar Cell）是通過光伏效應將光能轉換為電能的半導體元件，最近由於化石燃料枯竭問題的出現受到關注。尤其是，CIGS（Copper Indium Galium Selenide，銅銦鎵硒化物）薄膜太陽能電池或CdTe（Cadmium Telluride，碲化鎘）太陽能電池等化合物薄膜太陽能電池的生產工藝較簡單，生產成本低廉，能夠獲得與以往的太陽能電池相當水準的光轉換效率，因此作為下一代太陽能電池受到關注。
此外，有機發光元件（Organic Light Emitted Diode；OLED）與液晶顯示裝置不同，能夠進行自發光，因此無需使用背光源，耗電量小。此外，其視角廣，回應速度快，因此應用該有機發光元件的顯示裝置能夠實現優異的圖像，該圖像沒有視角及殘像的問題。
另外，在製造這種太陽能電池及有機發光元件時應用的沉積工序主要使用真空熱沉積方式，在使用所述真空熱沉積方式實施沉積工序時，需要連續供給原料且需要對原料供給速度進行適當的調節，以使原料能夠穩定地沉積於基板上。
根據這種必要，以往嘗試通過各種方式製造連續供給原料的原料供給單元，並且利用該原料供給單元執行沉積工序，但未能有效地調節原料供給量。Solar cells are semiconductor components that convert light energy into electrical energy through the photovoltaic effect. Recently, the emergence of fossil fuel depletion has attracted attention. In particular, a compound thin film solar cell such as a CIGS (Copper Indium Galium Selenide) thin film solar cell or a CdTe (Cadmium Telluride) solar cell is simple in production process and low in production cost, and can be obtained in the past. The solar cell has a fairly high level of light conversion efficiency and is therefore attracting attention as a next-generation solar cell.
Further, since the organic light emitting element (OLED) is different from the liquid crystal display device in that it can emit light, it is not necessary to use a backlight, and the power consumption is small. Further, since the viewing angle is wide and the response speed is fast, the display device to which the organic light emitting element is applied can realize an excellent image without the problem of the angle of view and the afterimage.
In addition, the deposition process applied in the production of such a solar cell and an organic light-emitting element mainly uses a vacuum thermal deposition method, and when the deposition process is performed using the vacuum thermal deposition method, it is necessary to continuously supply a raw material and it is necessary to appropriately supply the raw material supply speed. The adjustment is performed so that the raw material can be stably deposited on the substrate.
According to this necessity, in the past, attempts have been made to manufacture a raw material supply unit that continuously supplies raw materials by various means, and a deposition process is performed by the raw material supply unit, but the raw material supply amount cannot be effectively adjusted.
因此，本發明的目的是解決這種以往的問題，提供一種具備供給單元的薄膜沉積裝置。該供給單元使用投入部和輸送部向氣化單元連續供給原料，並能夠易於調節所供給的原料量。其中投入部用於連續投入原料，輸送部沿外周面以螺旋狀形成有用於填充原料的填充槽，通過旋轉沿長度方向輸送所填充的原料。
上述目的通過本發明的具備供給單元的薄膜沉積裝置實現。本發明的具備供給單元的薄膜沉積裝置，包括供給原料的供給單元、使從所述供給單元接收的原料氣化的氣化單元和向基板噴射在所述氣化單元氣化的原料的噴射單元，其特徵在於，所述供給單元包括：投入部，連續投入原料；輸送部，與所述投入部連接，沿外周面以螺旋狀形成有用於填充原料的填充槽，且通過旋轉沿長度方向輸送所填充的原料；排出部，從所述輸送部接收原料並將其轉送至所述氣化單元側；外殼部，容納所述輸送部，且形成有與所述投入部及所述排出部分別連接的連接槽；和電機部，與所述輸送部連接，使所述輸送部旋轉，從而將填充在所述填充槽的原料輸送到排出部。
此外，可進一步包括控制部，所述控制部控制所述電機部的旋轉速度，以調節通過所述輸送部所進行的原料的輸送速度。
此外，所述輸送部可為滾珠絲杠。
此外，可進一步包括氣體提供部，所述氣體提供部與所述排出部連接，用於提供將原料運送到所述氣化單元的運載氣體。
此外，所述氣化單元可包括：加熱部，形成有與所述噴射單元連接的噴射槽，用於加熱通過運載氣體運送到內部的原料；隔熱部，包覆所述加熱部的外表面，用於阻斷在所述加熱部產生的熱損失。
根據本發明，提供一種具備供給單元的薄膜沉積裝置。該供給單元使用投入部和輸送部向氣化單元連續供給原料，並能夠易於調節所供給的原料量。其中投入部用於連續投入原料，輸送部沿外周面以螺旋狀形成有用於填充原料的填充槽，通過旋轉沿長度方向輸送所填充的原料。
此外，能夠通過控制部調節由輸送部所進行的原料的輸送速度。
此外，能夠通過氣體提供部提供運載氣體，以使原料運送到氣化單元。
此外，能夠通過包括隔熱部的氣化單元阻斷在加熱部產生的熱損失。Accordingly, an object of the present invention is to solve such a conventional problem and to provide a thin film deposition apparatus including a supply unit. The supply unit continuously supplies the raw material to the vaporization unit using the input unit and the transport unit, and can easily adjust the amount of the supplied raw material. The input unit is for continuously feeding the raw material, and the conveying unit is formed with a filling groove for filling the raw material in a spiral shape along the outer peripheral surface, and conveys the filled raw material in the longitudinal direction by rotation.
The above object is achieved by the thin film deposition apparatus provided with the supply unit of the present invention. A thin film deposition apparatus including a supply unit of the present invention includes a supply unit that supplies a raw material, a vaporization unit that vaporizes a raw material received from the supply unit, and an injection unit that ejects a raw material vaporized into the vaporization unit to the substrate. The supply unit includes an input unit that continuously inputs a raw material, and a transport unit that is connected to the input unit, and has a spirally formed filling groove for filling the material along the outer peripheral surface, and is transported by rotation along the length direction. a material to be filled; a discharge portion that receives the raw material from the transport portion and transfers the material to the vaporization unit side; and an outer casing portion that accommodates the transport portion and is formed separately from the input portion and the discharge portion The connected connecting groove; and the motor portion are connected to the conveying portion, and the conveying portion is rotated to convey the raw material filled in the filling tank to the discharge portion.
Furthermore, a control unit may be further included, and the control unit controls a rotation speed of the motor unit to adjust a conveying speed of the raw material by the conveying unit.
Further, the conveying portion may be a ball screw.
Further, a gas supply portion may be further included, the gas supply portion being coupled to the discharge portion for providing a carrier gas for transporting a raw material to the gasification unit.
Further, the gasification unit may include: a heating portion formed with a spray groove connected to the spray unit for heating a raw material transported to the inside by the carrier gas; and a heat insulating portion covering the outer surface of the heating portion For blocking heat loss generated in the heating portion.
According to the present invention, a thin film deposition apparatus including a supply unit is provided. The supply unit continuously supplies the raw material to the vaporization unit using the input unit and the transport unit, and can easily adjust the amount of the supplied raw material. The input unit is for continuously feeding the raw material, and the conveying unit is formed with a filling groove for filling the raw material in a spiral shape along the outer peripheral surface, and conveys the filled raw material in the longitudinal direction by rotation.
Further, the conveying speed of the raw material by the conveying unit can be adjusted by the control unit.
Further, the carrier gas can be supplied through the gas supply portion to transport the raw material to the gasification unit.
Further, the heat loss generated in the heating portion can be blocked by the gasification unit including the heat insulating portion.
100‧‧‧薄膜沉積裝置
110‧‧‧供給單元
111‧‧‧投入部
112‧‧‧輸送部
113‧‧‧排出部
114‧‧‧外殼部
115‧‧‧電機部
116‧‧‧控制部
117‧‧‧氣體供給部
120‧‧‧氣化單元
130‧‧‧噴射單元
g1‧‧‧填充槽
g2‧‧‧連接槽
g3‧‧‧噴射槽
s‧‧‧基板100‧‧‧film deposition apparatus
110‧‧‧Supply unit
111‧‧‧ Input Department
112‧‧‧Transportation Department
113‧‧‧Exporting Department
114‧‧‧Shell Department
115‧‧Electrical Department
116‧‧‧Control Department
117‧‧‧Gas Supply Department
120‧‧‧ gasification unit
130‧‧‧Spray unit
G1‧‧‧fill slot
G2‧‧‧ connection slot
G3‧‧‧jet trough
s‧‧‧Substrate
第1圖為本發明的一實施例的具備供給單元的薄膜沉積裝置的立體圖。
第2圖為第1圖的具備供給單元的薄膜沉積裝置的分解立體圖。
第3圖為第1圖的具備供給單元的薄膜沉積裝置的剖視圖。
第4圖為第1圖的具備供給單元的薄膜沉積裝置中輸送部的操作示意圖。Fig. 1 is a perspective view of a thin film deposition apparatus including a supply unit according to an embodiment of the present invention.
Fig. 2 is an exploded perspective view of the thin film deposition apparatus including the supply unit of Fig. 1.
Fig. 3 is a cross-sectional view showing the thin film deposition apparatus including the supply unit of Fig. 1.
Fig. 4 is a schematic view showing the operation of the conveying unit in the thin film deposition apparatus including the supply unit of Fig. 1.
在進行說明之前需要說明的是，對具有相同結構的結構要素使用相同的附圖標記，並在一實施例中進行代表性的說明。
下面，參照附圖對本發明的一實施例的具備供給單元的薄膜沉積裝置進行詳細的說明。
第1圖為本發明的一實施例的具備供給單元的薄膜沉積裝置的立體圖，第2圖為第1圖的具備供給單元的薄膜沉積裝置的分解立體圖。
如第1圖和第2圖所示，本發明的一實施例的具備供給單元的薄膜沉積裝置100包括供給原料的供給單元110、用於使從供給單元110接收的原料氣化的氣化單元120和向基板s噴射在氣化單元120氣化的原料的噴射單元130。
所述供給單元110包括連續投入原料的投入部111、用於輸送原料的輸送部112、向氣化單元側轉送原料的排出部113、容納輸送部112的外殼部114、使輸送部112旋轉的電機部115、控制電機部115的旋轉速度的控制部116以及供給運載氣體的氣體供給部117。
所述投入部111的上端部開口以供給原料，下端部與後述輸送部112連接，從而使從上端部供給的原料連續投入到輸送部112。
所述輸送部112與投入部111的下端部連接以接收原料，沿外周面以螺旋狀形成有用於填充原料的填充槽g1。
此外，輸送部112通過後述的電機部115旋轉。通過這種旋轉，向輸送部112投入的原料填充到填充槽g1，並沿輸送部112的長度方向輸送到後述排出部113。
另外，可根據所投入的原料的類型和性質或者擬將沉積的薄膜性質等決定輸送部112的填充槽g1的大小及形狀。
此外，輸送部112可為滾珠絲杠，但並不限於此。
所述排出部113與輸送部112連接，從輸送部112接收原料並將其轉送至氣化單元120側。後述的氣體供給部117向排出部113的端部供給運載氣體，運載氣體將原料轉送至氣化單元120。
所述外殼部114容納輸送部，封閉輸送部112的填充槽g1的端部，以形成原料在輸送部112的長度方向輸送的空間。
此外，外殼部114形成有連接槽g2，該連接槽g2用於將輸送部112分別與投入部111及排出部113連接。
所述電機部115連接於輸送部112的端部，用於使輸送部112旋轉，使得填充在輸送部112的填充槽g1的原料沿輸送部112的長度方向移動並被輸送至排出部113。
此外，電機部115可為內置有編碼器（Encoder）或脈衝編碼器（Pulse Coder）等的步進電機（Stepping Motor）或伺服電機（Servo Motor）等，使得在後述控制部116能夠進行精確的位置控制，但並不限於此。
如此，能夠通過投入部111、輸送部112、排出部113、外殼部114和電機部115向後述氣化單元120連續供給原料。
所述控制部116與電機部115連接，用於控制電機部115的旋轉速度。
此外，控制部116可為具備微控制器的個人電腦或數值控制裝置（NC）以進行精密的位置控制，但並不限於此。
通過這種控制部116調節電機部115的旋轉速度，從而能夠調節與電機部115連接的輸送部112的旋轉速度，以容易控制向後述氣化單元120供給的原料量。
所述氣體供給部117與排出部113的端部連接，用於供給向後述氣化單元120運送到達排出部113的原料的運載氣體。
運載氣體是指用於運送原料的氣體，一般使用氫氣或氦氣，但並不限於此。
通過這種氣體供給部117能夠易於向後述氣化單元120供給原料。
所述氣化單元120包括用於加熱原料的加熱部121和用於阻斷在加熱部121產生的熱損失的隔熱部122。
所述加熱部121形成有噴射槽g3，該噴射槽g3與後述噴射單元130連接，所述加熱部121用於供給熱量使得通過運載氣體運送到內部的原料氣化。
此外，根據原料的類型氣化溫度不同，因此可在加熱部121進一步設置有溫度調節部（未圖示），從而能夠根據原料類型進行溫度設置。
此外，在加熱部121的內部配置有引導通道（未圖示），用於向與後述噴射單元130連接的噴射槽g3引導通過所述加熱部121氣化的原料，氣化的原料通過這種引導通道（未圖示）向噴射單元130移動。
所述隔熱部122包覆加熱部121的外表面，阻斷在加熱部121產生的熱損失。
在用於製造太陽能電池及有機發光元件的薄膜沉積工藝中，根據原料類型，原料的氣化溫度為幾百℃到幾千℃。
因此，為了有效地阻斷熱損失，優選根據原料類型決定隔熱部122的材料及厚度等。
所述噴射單元130與形成在加熱部121的噴射槽g3連接，向基板s噴射在加熱部121氣化的原料，從而在基板s上沉積原料。
因此，根據這種本發明的一實施例的具備供給單元的薄膜沉積裝置100，能夠向氣化單元120連續供給原料，並易於調節向氣化單元120的供給的原料量。
下面參照附圖，詳細說明包括上述供給單元的薄膜沉積裝置100的操作。
第3圖為第1圖的具備供給單元的薄膜沉積裝置的剖視圖，第4圖為第1圖的具備供給單元的薄膜沉積裝置的輸送部的操作示意圖。
如第3圖和第4圖所示，向投入部111連續投入原料，被投入的原料填充在輸送部112的填充槽g1。
然後，當電機部115旋轉時，與電機部115連接的輸送部112旋轉。
填充槽g1沿輸送部112的長度方向形成為螺旋狀。因此，當輸送部112旋轉時，填充於填充槽g1的原料也一起旋轉，並且沿輸送部112的長度方向移動。
然後，原料沿輸送部112的長度方向被繼續向排出部113側輸送，被輸送至與排出部113的入口連接的外殼部114的連接槽g2。
此時，原料的輸送速度與電機部115的旋轉速度和輸送部112的螺距（pitch）成正比例，並且與輸送部112的輸送方向和填充槽g1所形成的角度（銳角）成反比例。因此，可通過調節電機部115的旋轉速度、輸送部112的螺距（pitch）及輸送部112的輸送方向與填充槽g1所形成的角度（銳角）來調節原料的供給速度。
此外，由於電機部115的旋轉速度是通過與電機部115連接的控制部116來調節的，因此可通過控制部116適當地調節電機部115的速度，從而調節原料的供給速度。
然後，原料經過與排出部113連接的外殼部114的連接槽g並通過排出部113。
此時，與排出部113連接的氣體供給部117向排出部113側供給運載氣體，被供給的運載氣體將排出部113內的原料轉送至加熱部121。
然後，到達加熱部121的原料被加熱至氣化為止，氣化的原料經由配置在加熱部121內部的引導通道（未圖示），到達形成在加熱部121下端的噴射槽g3。
然後，到達噴射槽g3的原料流入噴射單元130，流入噴射單元130的原料通過噴射單元130噴射並沉積於基板s。
因此，根據本發明的一實施例的具備供給單元的薄膜沉積裝置，使用投入部和輸送部向氣化單元連續供給原料，並且易於調節向氣化單元供給的原料量，從而能夠穩定地在基板上沉積原料。其中投入部用於連續投入原料，輸送部沿外周面以螺旋狀形成有用於填充原料的填充槽，通過旋轉來沿長度方向輸送所填充的原料。
本發明的申請專利範圍並不限於上述實施例，在所附的請專利範圍的記載範圍內可實現為多種形式的實施例。在不脫離權利要求書所要求保護的本發明精神的範圍內，本發明所屬技術領域中具有一般知識的人均能變形的各種範圍也應屬於本發明的保護範圍。Before the description, it should be noted that the same reference numerals are used for the structural elements having the same structure, and a representative description will be made in an embodiment.
Hereinafter, a thin film deposition apparatus including a supply unit according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a perspective view of a thin film deposition apparatus including a supply unit according to an embodiment of the present invention, and Fig. 2 is an exploded perspective view of the thin film deposition apparatus including a supply unit of Fig. 1.
As shown in FIGS. 1 and 2, a thin film deposition apparatus 100 including a supply unit according to an embodiment of the present invention includes a supply unit 110 that supplies a raw material, and a vaporization unit that vaporizes a raw material received from the supply unit 110. 120 and an ejection unit 130 that ejects the raw material vaporized at the vaporization unit 120 toward the substrate s.
The supply unit 110 includes an input unit 111 that continuously inputs a raw material, a transport unit 112 that transports a raw material, a discharge unit 113 that transfers a raw material to the vaporization unit side, an outer casing portion 114 that houses the transport unit 112, and a transport unit 112 that rotates the transport unit 112. The motor unit 115, a control unit 116 that controls the rotational speed of the motor unit 115, and a gas supply unit 117 that supplies a carrier gas.
The upper end portion of the input portion 111 is opened to supply a raw material, and the lower end portion is connected to a transport portion 112 to be described later, so that the raw material supplied from the upper end portion is continuously supplied to the transport portion 112.
The conveying portion 112 is connected to the lower end portion of the input portion 111 to receive the raw material, and a filling groove g1 for filling the raw material is spirally formed along the outer peripheral surface.
Further, the transport unit 112 is rotated by a motor unit 115 which will be described later. By this rotation, the raw material supplied to the transport unit 112 is filled in the filling tank g1 and transported to the discharge unit 113 to be described later along the longitudinal direction of the transport unit 112.
Further, the size and shape of the filling groove g1 of the conveying portion 112 can be determined according to the type and nature of the raw material to be input or the properties of the deposited film to be deposited.
Further, the conveying portion 112 may be a ball screw, but is not limited thereto.
The discharge portion 113 is connected to the transport portion 112, and receives the raw material from the transport portion 112 and transfers it to the gasification unit 120 side. The gas supply unit 117 to be described later supplies a carrier gas to the end of the discharge unit 113, and the carrier gas transfers the raw material to the vaporization unit 120.
The outer casing portion 114 accommodates the conveying portion, and closes the end portion of the filling groove 112 of the conveying portion 112 to form a space in which the raw material is conveyed in the longitudinal direction of the conveying portion 112.
Further, the outer casing portion 114 is formed with a coupling groove g2 for connecting the conveying portion 112 to the input portion 111 and the discharge portion 113, respectively.
The motor portion 115 is connected to an end portion of the transport portion 112 for rotating the transport portion 112 such that the material filled in the filling groove g1 of the transport portion 112 moves in the longitudinal direction of the transport portion 112 and is transported to the discharge portion 113.
Further, the motor unit 115 may be a stepping motor or a servo motor (Servo Motor) in which an encoder (Encoder) or a pulse encoder (Pulse Coder) or the like is incorporated, so that the control unit 116 described later can perform accurate operation. Position control, but not limited to this.
In this manner, the input unit 111, the transport unit 112, the discharge unit 113, the outer casing unit 114, and the motor unit 115 can continuously supply the raw material to the vaporization unit 120 which will be described later.
The control unit 116 is connected to the motor unit 115 and controls the rotational speed of the motor unit 115.
Further, the control unit 116 may be a personal computer or a numerical controller (NC) including a microcontroller to perform precise position control, but is not limited thereto.
By adjusting the rotational speed of the motor unit 115 by the control unit 116, the rotational speed of the transport unit 112 connected to the motor unit 115 can be adjusted to easily control the amount of the raw material supplied to the vaporization unit 120, which will be described later.
The gas supply unit 117 is connected to an end of the discharge unit 113 and supplies a carrier gas that transports the material that has reached the discharge unit 113 to the vaporization unit 120, which will be described later.
The carrier gas refers to a gas for transporting a raw material, and hydrogen gas or helium gas is generally used, but is not limited thereto.
The gas supply unit 117 can easily supply the raw material to the vaporization unit 120 which will be described later.
The gasification unit 120 includes a heating portion 121 for heating the raw material and a heat insulating portion 122 for blocking heat loss generated in the heating portion 121.
The heating unit 121 is formed with a spray groove g3 that is connected to an injection unit 130 that is used to supply heat to vaporize a raw material that is transported to the inside by the carrier gas.
Further, since the vaporization temperature differs depending on the type of the raw material, the heating unit 121 can be further provided with a temperature adjustment unit (not shown), so that the temperature can be set according to the type of the raw material.
Further, a guide passage (not shown) is disposed inside the heating unit 121, and the raw material vaporized by the heating unit 121 is guided to the injection tank g3 connected to the injection unit 130, which will be described later, and the vaporized raw material passes through the above. A guide passage (not shown) moves to the injection unit 130.
The heat insulating portion 122 covers the outer surface of the heating portion 121 to block heat loss generated in the heating portion 121.
In the thin film deposition process for manufacturing a solar cell and an organic light-emitting element, the vaporization temperature of the raw material is several hundred ° C to several thousands ° C depending on the type of the raw material.
Therefore, in order to effectively block heat loss, it is preferable to determine the material, thickness, and the like of the heat insulating portion 122 in accordance with the type of the raw material.
The ejecting unit 130 is connected to the ejection groove g3 formed in the heating unit 121, and ejects the raw material vaporized in the heating unit 121 to the substrate s, thereby depositing a raw material on the substrate s.
Therefore, according to the thin film deposition apparatus 100 including the supply unit according to the embodiment of the present invention, the raw material can be continuously supplied to the vaporization unit 120, and the amount of the raw material supplied to the vaporization unit 120 can be easily adjusted.
The operation of the thin film deposition apparatus 100 including the above-described supply unit will be described in detail below with reference to the drawings.
Fig. 3 is a cross-sectional view of the thin film deposition apparatus including the supply unit of Fig. 1, and Fig. 4 is a schematic view showing the operation of the transport unit of the thin film deposition apparatus including the supply unit of Fig. 1.
As shown in FIGS. 3 and 4, the raw material is continuously supplied to the input unit 111, and the input raw material is filled in the filling tank g1 of the transport unit 112.
Then, when the motor unit 115 rotates, the conveying unit 112 connected to the motor unit 115 rotates.
The filling groove g1 is formed in a spiral shape along the longitudinal direction of the conveying portion 112. Therefore, when the conveying portion 112 rotates, the raw materials filled in the filling tank g1 also rotate together and move in the longitudinal direction of the conveying portion 112.
Then, the raw material is continuously transported to the discharge portion 113 side in the longitudinal direction of the transport portion 112, and is transported to the connection groove g2 of the outer casing portion 114 connected to the inlet of the discharge portion 113.
At this time, the conveying speed of the raw material is proportional to the rotation speed of the motor portion 115 and the pitch of the conveying portion 112, and is inversely proportional to the conveying direction of the conveying portion 112 and the angle (an acute angle) formed by the filling groove g1. Therefore, the supply speed of the raw material can be adjusted by adjusting the rotational speed of the motor unit 115, the pitch of the transport unit 112, and the angle (an acute angle) formed by the transport direction of the transport unit 112 and the filling groove g1.
Further, since the rotational speed of the motor portion 115 is adjusted by the control portion 116 connected to the motor portion 115, the speed of the motor portion 115 can be appropriately adjusted by the control portion 116, thereby adjusting the supply speed of the raw material.
Then, the raw material passes through the connection groove g of the outer casing portion 114 connected to the discharge portion 113 and passes through the discharge portion 113.
At this time, the gas supply unit 117 connected to the discharge unit 113 supplies the carrier gas to the discharge unit 113 side, and the supplied carrier gas transfers the raw material in the discharge unit 113 to the heating unit 121.
Then, the raw material that has reached the heating unit 121 is heated until it is vaporized, and the vaporized raw material reaches the ejection groove g3 formed at the lower end of the heating unit 121 via a guide passage (not shown) disposed inside the heating unit 121.
Then, the raw material reaching the ejection tank g3 flows into the ejection unit 130, and the raw material flowing into the ejection unit 130 is ejected by the ejection unit 130 and deposited on the substrate s.
Therefore, according to the thin film deposition apparatus including the supply unit of the embodiment of the present invention, the raw material is continuously supplied to the vaporization unit using the input portion and the transport portion, and the amount of the raw material supplied to the vaporization unit can be easily adjusted, thereby enabling stable stabilization on the substrate. The raw material is deposited on it. The input unit is for continuously feeding the raw material, and the conveying unit is formed with a filling groove for filling the raw material in a spiral shape along the outer peripheral surface, and conveys the filled raw material in the longitudinal direction by rotation.
The scope of the invention is not limited to the embodiments described above, but can be embodied in various forms within the scope of the appended claims. It is within the scope of the present invention to cover various modifications within the scope of the invention as claimed in the appended claims.
100‧‧‧薄膜沉積裝置 100‧‧‧film deposition apparatus
110‧‧‧供給單元 110‧‧‧Supply unit
111‧‧‧投入部 111‧‧‧ Input Department
113‧‧‧排出部 113‧‧‧Exporting Department
114‧‧‧外殼部 114‧‧‧Shell Department
115‧‧‧電機部 115‧‧Electrical Department
116‧‧‧控制部 116‧‧‧Control Department
117‧‧‧氣體供給部 117‧‧‧Gas Supply Department
120‧‧‧氣化單元 120‧‧‧ gasification unit
130‧‧‧噴射單元 130‧‧‧Spray unit
s‧‧‧基板 s‧‧‧Substrate
Claims (5)
所述供給單元包括：
投入部，連續投入原料；
輸送部，與所述投入部連接，沿外周面以螺旋狀形成有用於填充原料的填充槽，且通過旋轉沿長度方向輸送所填充的原料；
排出部，從所述輸送部接收原料並將所述原料轉送至所述氣化單元側；
外殼部，容納所述輸送部，且形成有與所述投入部及所述排出部分別連接的連接槽；和
電機部，與所述輸送部連接，使所述輸送部旋轉，從而將填充在所述填充槽的原料輸送到排出部。A thin film deposition apparatus including a supply unit, comprising: a supply unit that supplies a raw material, a vaporization unit that vaporizes a raw material received from the supply unit, and an injection unit that injects a raw material vaporized into the vaporization unit to the substrate, Characterized by
The supply unit includes:
Input department, continuous input of raw materials;
The conveying portion is connected to the input portion, and a filling groove for filling the raw material is spirally formed along the outer peripheral surface, and the filled raw material is conveyed in the longitudinal direction by rotation;
a discharge portion that receives the raw material from the conveying portion and transfers the raw material to the gasification unit side;
The outer casing portion houses the transport portion, and is formed with a connection groove that is connected to the input portion and the discharge portion, and a motor portion that is connected to the transport portion to rotate the transport portion to be filled in The raw material of the filling tank is delivered to the discharge portion.
所述氣化單元包括：
加熱部，形成有與所述噴射單元連接的噴射槽，用於加熱通過運載氣體運送到內部的原料；隔熱部，包覆所述加熱部的外表面，用於阻斷所述加熱部產生的熱損失。A thin film deposition apparatus including a supply unit according to claim 4, characterized in that
The gasification unit includes:
a heating portion formed with a spray groove connected to the spray unit for heating a raw material transported to the inside by the carrier gas; and a heat insulating portion covering an outer surface of the heating portion for blocking the heat generating portion Heat loss.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130073250 | 2013-06-25 |
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| TW201500578A true TW201500578A (en) | 2015-01-01 |
| TWI493075B TWI493075B (en) | 2015-07-21 |
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| TW102124860A TWI493075B (en) | 2013-06-25 | 2013-07-11 | Thin film deposition apparatus having supply unit |
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| WO (1) | WO2014208789A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002030418A (en) * | 2000-07-13 | 2002-01-31 | Denso Corp | Vapor deposition system |
| JP2005060767A (en) * | 2003-08-12 | 2005-03-10 | Sony Corp | Thin-film-forming apparatus |
| JP4535926B2 (en) * | 2005-04-26 | 2010-09-01 | 日立造船株式会社 | Vapor deposition material evaporation equipment |
| KR101191690B1 (en) * | 2007-02-28 | 2012-10-16 | 가부시키가이샤 알박 | Deposition source, deposition apparatus and method for forming organic thin film |
| EP2190264A4 (en) * | 2007-09-10 | 2011-11-23 | Ulvac Inc | Evaporation apparatus |
| KR100936378B1 (en) * | 2009-04-27 | 2010-01-13 | 에스엔유 프리시젼 주식회사 | Unit for supplying source and apparatus for depositioning thin film and method for depositioning thin film |
| JP2011060899A (en) * | 2009-09-08 | 2011-03-24 | Ulvac Japan Ltd | Apparatus for manufacturing thin film solar cell |
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2013
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