TW201446895A - Method of producing article with silane-based film - Google Patents

Method of producing article with silane-based film Download PDF

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TW201446895A
TW201446895A TW103112088A TW103112088A TW201446895A TW 201446895 A TW201446895 A TW 201446895A TW 103112088 A TW103112088 A TW 103112088A TW 103112088 A TW103112088 A TW 103112088A TW 201446895 A TW201446895 A TW 201446895A
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group
fluorine
decane
substrate
carbon atoms
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TW103112088A
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Chinese (zh)
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Teruyuki Fukuda
Takeshi Maehira
Yoshiaki Honda
Daiki Ishii
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Daikin Ind Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/08Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/06Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254After-treatment
    • B05D3/029After-treatment with microwaves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00Optical elements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Silicon Polymers (AREA)
  • Polyethers (AREA)

Abstract

An objective of this invention is to provide a method of producing an article comprising a substrate and a silane-based film covering the surface of the substrate, which is capable of forming a silane-based film with higher friction durability. Provided is a method of producing an article comprising a substrate and a silane-based film covering the surface of the substrate, comprising: (a) forming a precursor film including a silane compound on a surface of a substrate, the silane compound having a hydrolyzable group bonding to Si; (b) irradiating the substrate formed with the precursor film with microwave to form a silane-based film originated from the precursor film on the substrate.

Description

具有矽烷系膜之物品的製造方法 Method for producing article having decane film

本發明係關於具有矽烷系膜之物品的製造方法,以及藉由該方法所製造之物品。 The present invention relates to a method of producing an article having a decane-based film, and an article produced by the method.

已知若將某種矽烷化合物使用於基材之表面處理,可提供優異疏水性、疏油性、抗污性、表面平滑性等。由矽烷化合物所得之膜,亦即矽烷系膜,係作為所謂功能性薄膜而施用於例如玻璃、塑膠、纖維、建築材料等各種各樣之基材(參照專利文獻1)。 It is known that when a certain decane compound is used for the surface treatment of a substrate, excellent hydrophobicity, oleophobicity, stain resistance, surface smoothness and the like can be provided. The film obtained from the decane compound, that is, the decane-based film, is applied as a so-called functional film to various substrates such as glass, plastic, fiber, and building materials (see Patent Document 1).

該矽烷系膜一般係藉由真空蒸鍍或濺鍍等乾燥被覆法而形成於基材表面。又,矽烷系膜亦可藉由浸漬或噴霧等濕潤被覆法以及常壓電漿法等而形成於基材表面(參照專利文獻1)。 The decane-based film is generally formed on the surface of a substrate by a dry coating method such as vacuum deposition or sputtering. Further, the decane-based film may be formed on the surface of the substrate by a wet coating method such as dipping or spraying or a normal piezoelectric method (see Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本特開2008-534696號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-534696

如上述,矽烷系膜可藉由一般之真空蒸鍍或濺鍍等乾燥被覆法而形成,但該等方法有生產性低之問題。另一方面,浸漬或噴霧等濕潤被覆法雖生產性高,但所得矽烷系膜之耐久性不能謂之為充分。尤其,矽烷系膜即使為薄膜也能發揮上述功能,故適合利用於要求光穿透性或透明性之眼鏡或觸控面板等光學構件,而在該等用途被要求進一步提昇磨擦耐久性。 As described above, the decane-based film can be formed by a general dry coating method such as vacuum deposition or sputtering, but these methods have a problem of low productivity. On the other hand, although the wet coating method such as immersion or spraying has high productivity, the durability of the obtained decane-based film cannot be said to be sufficient. In particular, since the decane-based film can exhibit the above functions even if it is a film, it is suitably used for optical members such as glasses or touch panels that require light transmittance or transparency, and it is required to further improve the friction durability in such applications.

本發明之目的為提供含有基材及被覆該基材表面之矽烷系膜之物品的製造方法,其係可形成具有更高磨擦耐久性之矽烷系膜的方法。 An object of the present invention is to provide a method for producing an article comprising a substrate and a decane-based film covering the surface of the substrate, which is a method for forming a decane-based film having higher friction durability.

本發明之1個主旨係提供一種含有基材及被覆於該基材表面之矽烷系膜之物品的製造方法,其中包括:(a)在基材表面形成含有矽烷化合物之前軀物膜,該矽烷化合物具有鍵結於Si且可水解的基;以及(b)於形成該前軀物膜之基材照射微波,而在該基材表面形成源自於該前軀物膜之矽烷系膜。 One object of the present invention is to provide a method for producing an article comprising a substrate and a decane-based film coated on the surface of the substrate, comprising: (a) forming a precursor film containing a decane compound on the surface of the substrate, the decane The compound has a group bonded to Si and hydrolyzable; and (b) the substrate on which the precursor film is formed is irradiated with microwaves, and a decane-based film derived from the precursor film is formed on the surface of the substrate.

根據本發明之上述製造方法,與以往矽烷系膜之形成方法相比,可簡便地形成具有高磨擦耐久性之矽烷系膜。 According to the above production method of the present invention, a decane-based film having high friction durability can be easily formed as compared with the conventional method for forming a decane-based film.

本發明之另1主旨係提供以本發明之上述製造方法所得之物品。與以往製造方法所得物品之矽烷系膜相比,該物品之矽烷系膜係如上述具有高磨擦耐久性。 Another object of the present invention is to provide an article obtained by the above production method of the present invention. The decane-based film of the article has high friction durability as described above, compared to the decane-based film of the article obtained by the conventional production method.

根據本發明,在形成有含有具有鍵結於Si且可水解的基之矽烷化合物之前軀物膜的基材照射微波,藉此可在該基 材表面形成具有高磨擦耐久性之矽烷系膜。 According to the present invention, a substrate of a body film before forming a decane compound having a group having a bond capable of being hydrolyzed with Si is irradiated with microwaves, whereby the base can be The surface of the material forms a decane-based film having high friction durability.

第1圖係表示本發明實施例1、2及比較例1所製作之含氟矽烷系膜的磨擦耐久性之圖表。 Fig. 1 is a graph showing the friction durability of the fluorine-containing decane-based film produced in Examples 1 and 2 of the present invention and Comparative Example 1.

第2圖係表示本發明實施例3、4及比較例2所製作之含氟矽烷系膜的磨擦耐久性之圖表。 Fig. 2 is a graph showing the friction durability of the fluorine-containing decane-based film produced in Examples 3 and 4 and Comparative Example 2 of the present invention.

第3圖係表示本發明實施例5、6及比較例3所製作之含氟矽烷系膜的磨擦耐久性之圖表。 Fig. 3 is a graph showing the friction durability of the fluorine-containing decane-based film produced in Examples 5 and 6 and Comparative Example 3 of the present invention.

以下,通過本發明之實施形態詳細說明本發明物品的製造方法、以及藉由該製造方法所得之物品,但本發明並不限定於此。 Hereinafter, the method for producing the article of the present invention and the article obtained by the method of the present invention will be described in detail by way of embodiments of the present invention, but the present invention is not limited thereto.

本發明物品的製造方法,概略而言,可視為在基材表面形成含有矽烷化合物的膜作為前軀物膜,之後將該前軀物膜後處理,藉此形成矽烷系膜之方法,而該後處理係實施微波照射。 The method for producing the article of the present invention can be roughly regarded as a method in which a film containing a decane compound is formed on a surface of a substrate as a precursor film, and then the precursor film is post-treated to form a decane-based film. The post-treatment system performs microwave irradiation.

首先,準備基材。本發明可使用之基材,例如可以玻璃、樹脂(天然或合成樹脂,例如可為一般塑膠材料,也可為板狀、膜、其他形態)、金屬(鋁、銅、鐵等金屬單體或合金等複合體)、陶瓷、半導體(矽、鍺等)、纖維(織物、不織布等)、毛皮、皮革、木材、陶磁器、石材等任意的適當材料所構成,只要是至少在要形成前軀物膜前,構成基材表面之材料具有反應性基(可與矽烷化合物水解後鍵結於Si的基或羥基反應之基)者,則無特別限定。 First, prepare a substrate. The substrate which can be used in the present invention may be, for example, glass, resin (natural or synthetic resin, for example, may be a general plastic material, or may be a plate, a film, or the like), or a metal (a metal such as aluminum, copper or iron) or Any combination of materials such as alloys, ceramics, semiconductors, woven fabrics, fabrics, wood, ceramics, stone, etc., as long as at least the forebody is to be formed Before the film, the material constituting the surface of the substrate has a reactive group (a group which can be bonded to a group or a hydroxyl group of the Si after hydrolysis of the decane compound), and is not particularly limited.

例如,本發明之具有矽烷系膜之物品為光學構件 時,可在基材表面(最外層)形成某種層(或膜),例如可形成硬塗層或抗反射層等。抗反射層可使用單層抗反射層或多層抗反射層。可使用於抗反射層之無機物的例子可舉出:SiO2、SiO、ZrO2、TiO2、TiO、Ti2O3、Ti2O5、Al2O3、Ta2O5、CeO2、MgO、Y2O3、SnO2、MgF2、WO3等。該等無機物可單獨使用,或組合該等之2種以上(例如混合物)使用。為多層抗反射層時,較佳為在其最外層使用SiO2及/或SiO。本發明之具有矽烷系膜之物品為觸控面板用光學玻璃零件時,可在基材(玻璃)表面的一部分具有透明電極,例如使用氧化銦錫(ITO)或氧化銦鋅等之薄膜。又,基材可因應其具體規格等而具有抗靜電層、絕緣層、黏著層、保護層、裝飾框層(I-CON)、霧化膜、硬塗層、偏光膜、相位差膜、以及液晶顯示模組等。 For example, when the article having a decane-based film of the present invention is an optical member, a certain layer (or film) can be formed on the surface (outermost layer) of the substrate, and for example, a hard coat layer or an anti-reflection layer can be formed. The antireflection layer may use a single antireflection layer or a multilayer antireflection layer. Examples of the inorganic substance which can be used for the antireflection layer include SiO 2 , SiO, ZrO 2 , TiO 2 , TiO, Ti 2 O 3 , Ti 2 O 5 , Al 2 O 3 , Ta 2 O 5 , CeO 2 , MgO, Y 2 O 3 , SnO 2 , MgF 2 , WO 3 and the like. These inorganic substances may be used singly or in combination of two or more kinds thereof (for example, a mixture). In the case of a multilayer antireflection layer, it is preferred to use SiO 2 and/or SiO in its outermost layer. When the article having a decane-based film of the present invention is an optical glass component for a touch panel, a transparent electrode may be provided on a part of the surface of the substrate (glass), and for example, a film of indium tin oxide (ITO) or indium zinc oxide may be used. Further, the substrate may have an antistatic layer, an insulating layer, an adhesive layer, a protective layer, a decorative frame layer (I-CON), an atomizing film, a hard coat layer, a polarizing film, a retardation film, and the like according to specific specifications thereof. LCD module, etc.

基材形狀並無特別限定。又,需形成矽烷系膜之基材的表面區域只要為基材表面的至少一部分即可,可因應欲製造的物品之用途以及具體規格等而適宜決定。 The shape of the substrate is not particularly limited. Further, the surface region of the substrate on which the decane-based film is to be formed may be at least a part of the surface of the substrate, and may be appropriately determined depending on the use of the article to be manufactured, the specific specifications, and the like.

就基材而言,只要是至少其表面部分為由原本即具有羥基之材料所構成者即可。該材料可舉出玻璃,又,可舉出在表面形成自然氧化膜或熱氧化膜之金屬(尤其是卑金屬)、陶瓷、半導體等。或者,在如樹脂等具有羥基卻不充分之情形,或是原本即不具有羥基之情形下,可對基材實施某種前處理,藉此在基材表面導入、增加羥基。該前處理之例子可舉出:電漿處理)例如電暈放電)、照射離子射線。電漿處理係在基材表面導入或增加羥基、同時淨化基材表面(除去異物等),故適合利用。又,該前處理之其他例子可舉出藉由LB法(朗謬-布洛傑(Langmuir-Blodgett)法)或化學吸附法等,而預先在基材表面以單分子膜之形態形成具 有碳-碳不飽和鍵結基之界面吸附劑,之後,在含氧或氮等之環境下使不飽和鍵結斷裂之方法。 The substrate may be any material as long as at least the surface portion thereof is composed of a material having a hydroxyl group. The material may be glass, and a metal (especially a base metal), a ceramic, a semiconductor, or the like which forms a natural oxide film or a thermal oxide film on the surface may be mentioned. Alternatively, in the case where the resin has a hydroxyl group but is insufficient, or if the hydroxyl group is not originally present, the substrate may be subjected to some pretreatment to introduce and increase a hydroxyl group on the surface of the substrate. Examples of the pretreatment include plasma treatment (for example, corona discharge) and irradiation of ion beams. The plasma treatment is suitable for use by introducing or adding a hydroxyl group to the surface of the substrate and purifying the surface of the substrate (removing foreign matter, etc.). Further, another example of the pretreatment is a method of forming a monomolecular film on the surface of the substrate in advance by the LB method (Langmuir-Blodgett method) or a chemisorption method. An interface adsorbent having a carbon-carbon unsaturated bonding group, followed by a method of breaking an unsaturated bond in an environment containing oxygen or nitrogen.

又,作為該基材,只要是至少其表面部分為含有聚矽氧化合物或烷氧基矽烷之材料所構成者即可,該聚矽氧化合物或烷氧基矽烷具有1個以上之其他反應性基,其他反應性基例如Si-H基。 Further, the substrate may be formed of a material containing at least a surface portion containing a polyoxonium compound or an alkoxysilane, and the polyoxyalkylene compound or alkoxydecane has one or more other reactivity. Other reactive groups such as Si-H groups.

接著在該基材表面形成含有矽烷化合物之前軀物膜,該矽烷化合物具有鍵結於Si且可水解的基。 Next, a precursor film containing a decane compound having a group bonded to Si and hydrolyzable is formed on the surface of the substrate.

本發明所使用之矽烷化合物只要是具有鍵結於Si且可水解的基,則無特別限定,較佳為含氟矽烷化合物。又,含氟矽烷化合物可使用在鍵結於Si且可水解的基之外更具有全氟聚醚基者。 The decane compound used in the present invention is not particularly limited as long as it has a group which is bonded to Si and is hydrolyzable, and is preferably a fluorine-containing decane compound. Further, as the fluorine-containing decane compound, those having a perfluoropolyether group in addition to the group bonded to Si and hydrolyzable can be used.

上述矽烷化合物係使用由氯矽烷類、烷氧基矽烷類、矽烷偶合劑所成群組所選擇之1種或2種以上,氯矽烷類例如可舉出甲基三氯矽烷、甲基二氯矽烷、二甲基二氯矽烷、三甲基氯矽烷、苯基三氯矽烷、二苯基二氯矽烷等,烷氧基矽烷類例如可舉出四甲氧基矽烷、甲基三甲氧基矽烷、二甲基二甲氧基矽烷、苯基三甲氧基矽烷、二苯基二甲氧基矽烷、四乙氧基矽烷、甲基三乙氧基矽烷、二甲基二乙氧基矽烷、苯基三乙氧基矽烷、二苯基二乙氧基矽烷、異丁基三甲氧基矽烷、癸基三甲氧基矽烷等,尤其適合使用烷氧基矽烷類。 The decane compound is one or more selected from the group consisting of chlorosilanes, alkoxy decanes, and decane coupling agents, and examples of the chlorosilanes include methyltrichlorodecane and methyl dichloride. Examples of decane, dimethyldichlorodecane, trimethylchlorodecane, phenyltrichlorodecane, diphenyldichlorodecane, etc., and alkoxydecanes include, for example, tetramethoxydecane and methyltrimethoxydecane. , dimethyl dimethoxy decane, phenyl trimethoxy decane, diphenyl dimethoxy decane, tetraethoxy decane, methyl triethoxy decane, dimethyl diethoxy decane, benzene Alkoxy decane, diphenyldiethoxy decane, isobutyltrimethoxydecane, decyltrimethoxydecane, and the like are particularly preferably used.

上述矽烷偶合劑例如可舉出乙烯基三氯矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基參(β-甲氧基乙氧基)矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧 基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷、γ-環氧丙氧基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、γ-甲基丙烯醯基丙基甲基二甲氧基矽烷、γ-甲基丙烯醯基丙基甲基二乙氧基矽烷、N-β-(戊基乙基)-γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-氯丙基三甲氧基矽烷、γ-巰基丙基三甲氧基矽烷等。 Examples of the above decane coupling agent include vinyltrichlorodecane, vinyltrimethoxydecane, vinyltriethoxydecane, vinylstilbene (β-methoxyethoxy)decane, and β-(3,4). -Epoxycyclohexyl)ethyltrimethoxydecane, gamma-glycidoxy Propyltrimethoxydecane, γ-glycidoxypropylmethyldiethoxydecane, γ-glycidoxypropyltriethoxydecane, γ-methylpropenyloxypropyl Trimethoxydecane, γ-methylpropenyloxypropyltriethoxydecane, γ-methylpropenylpropylmethyldimethoxydecane, γ-methylpropenylpropylmethylmethyl Ethoxy decane, N-β-(pentylethyl)-γ-aminopropyltrimethoxydecane, γ-aminopropyltrimethoxydecane, N-phenyl-γ-aminopropyltrimethyl Oxydecane, γ-chloropropyltrimethoxydecane, γ-mercaptopropyltrimethoxydecane, and the like.

具有鍵結於Si且可水解的基及全氟聚醚基之含氟矽烷化合物的例子,可舉出以下通式(1a)及(1b)中任一者所示之化合物(亦可為1種或2種以上之混合物)。 Examples of the fluorine-containing decane compound having a hydrolyzable group bonded to Si and a perfluoropolyether group include a compound represented by any one of the following formulas (1a) and (1b) (may also be 1) Kind or a mixture of two or more).

該等式中,Rf1表示可經1個或1個以上之氟原子取代之碳數1至16之烷基,較佳為可經1個或1個以上之氟原子取代之碳數1至3之烷基。上述可經1個或1個以上之氟原子取代之烷基較佳為除了末端碳原子為CF2H-以外、其他所有的碳原子皆被氟取代之氟烷基或全氟烷基,更佳為全氟烷基。 In the formula, Rf 1 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, preferably a carbon number 1 which may be substituted by one or more fluorine atoms. 3 alkyl. The above alkyl group which may be substituted by one or more fluorine atoms is preferably a fluoroalkyl group or a perfluoroalkyl group in which all of the carbon atoms are substituted by fluorine, except that the terminal carbon atom is CF 2 H-. Preferably, it is a perfluoroalkyl group.

a、b、c及s分別表示構成聚合物主骨架之全氟聚醚的3種重複單元數,係互相獨立並為0以上、200以下之整數,a、b、c及s的和至少為1,較佳為1至100。附以下標a、b、c或s並以括弧括起之各重複單元的存在順序在式中為任意順序。該等重複單 元中,-(OC4F8)-可為-(OCF2CF2CF2CF2)-、-(OCF(CF3)CF2CF2)-、-(OCF2CF(CF3)CF2)-、-(OCF2CF2CF(CF3))-、-(OC(CF3)2CF2)-、-(OCF2C(CF3)2)-、-(OCF(CF3)CF(CF3))-、-(OCF(C2F6)CF2)-及-(OCF2CF(C2F6))-之任一者,較佳為-(OCF2CF2CF2CF2)-。-(OC3F6)-可為-(OCF2CF2CF2)-、-(OCF(CF3)CF2)-及-(OCF2CF(CF3))-之任一者,較佳為-(OCF2CF2CF2)-。-(OC2F4)-可為-(OCF2CF2)-及-(OCF(CF3))-之任一者,較佳為-(OCF2CF2)-。 a, b, c and s respectively represent the number of three repeating units of the perfluoropolyether constituting the main skeleton of the polymer, and are independent of each other and are integers of 0 or more and 200 or less, and the sum of a, b, c and s is at least 1, preferably from 1 to 100. The order of existence of each repeating unit with the following a, b, c or s and enclosed in parentheses is in any order in the formula. In the repeating units, -(OC 4 F 8 )- may be -(OCF 2 CF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 CF 2 )-, -(OCF 2 CF(CF 3 ) CF 2 )-, -(OCF 2 CF 2 CF(CF 3 ))-, -(OC(CF 3 ) 2 CF 2 )-, -(OCF 2 C(CF 3 ) 2 )-, -(OCF Any of (CF 3 )CF(CF 3 ))-, -(OCF(C 2 F 6 )CF 2 )- and -(OCF 2 CF(C 2 F 6 ))-, preferably -(OCF 2 CF 2 CF 2 CF 2 )-. -(OC 3 F 6 )- may be any of -(OCF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 )-, and -(OCF 2 CF(CF 3 ))- Good for - (OCF 2 CF 2 CF 2 )-. -(OC 2 F 4 )- may be any of -(OCF 2 CF 2 )- and -(OCF(CF 3 ))-, preferably -(OCF 2 CF 2 )-.

d及f為0或1。 d and f are 0 or 1.

e及g為0以上、2以下之整數。 e and g are integers of 0 or more and 2 or less.

m及l為1以上、10以下之整數。 m and l are integers of 1 or more and 10 or less.

X表示氫原子或鹵原子。鹵原子較佳為碘原子、氯原子、氟原子。 X represents a hydrogen atom or a halogen atom. The halogen atom is preferably an iodine atom, a chlorine atom or a fluorine atom.

Y表示氫原子或低級烷基。低級烷基較佳為碳數1至20之烷基。 Y represents a hydrogen atom or a lower alkyl group. The lower alkyl group is preferably an alkyl group having 1 to 20 carbon atoms.

Z表示氟原子或低級氟烷基。低級氟烷基例如為碳數1至3之氟烷基,較佳為碳數1至3之全氟烷基,更佳為三氟甲基、五氟乙基,又更佳為三氟甲基。代表性者係Z為氟原子、且d及f為1。 Z represents a fluorine atom or a lower fluoroalkyl group. The lower fluoroalkyl group is, for example, a fluoroalkyl group having 1 to 3 carbon atoms, preferably a perfluoroalkyl group having 1 to 3 carbon atoms, more preferably a trifluoromethyl group or a pentafluoroethyl group, and still more preferably a trifluoromethyl group. base. Representative Z is a fluorine atom, and d and f are 1.

T及R1係鍵結於Si的基。 T and R 1 are bonded to the group of Si.

T表示羥基或可水解的基。可水解的基之例子可舉出-OA、-OCOA、-O-N=C(A)2、-N(A)2、-NHA、鹵素(該等式中,A表示取代或非取代之碳數1至3之烷基)等。羥基並無特別限定,可為可水解的基水解所產生者。 T represents a hydroxyl group or a hydrolyzable group. Examples of the hydrolyzable group include -OA, -OCOA, -ON=C(A) 2 , -N(A) 2 , -NHA, halogen (in the formula, A represents a substituted or unsubstituted carbon number 1 to 3 alkyl groups) and the like. The hydroxyl group is not particularly limited and may be those produced by hydrolysis of a hydrolyzable group.

R1表示氫原子或碳數1至22之烷基,較佳為碳數1至22之 烷基,更佳為碳數1至3之烷基。 R 1 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, preferably an alkyl group having 1 to 22 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms.

n為1以上、3以下之整數。 n is an integer of 1 or more and 3 or less.

具有鍵結於Si且可水解的基及全氟聚醚基之含氟矽烷化合物的其他例子,可舉出以下通式(2a)及(2b)中任一者所示之化合物(可為1種或2種以上之混合物)。 Other examples of the fluorine-containing decane compound having a hydrolyzable group bonded to Si and a perfluoropolyether group include a compound represented by any one of the following formulas (2a) and (2b) (which may be 1) Kind or a mixture of two or more).

RfRf 22 -PFPE-X-(SiT-PFPE-X-(SiT nn RR 22 3-n3-n )) αα ‧‧‧(2a) ‧‧‧(2a)

(R(R 22 3-n3-n TT nn Si)Si) αα -X-PFPE-X-(SiT-X-PFPE-X-(SiT nn RR 22 3-n3-n )) αα ‧‧‧(2b)‧‧‧(2b)

該等式中,Rf2表示可經1個或1個以上之氟原子取代之碳數1至16之烷基,較佳為可經1個或1個以上之氟原子取代之碳數1至3之烷基。上述可經1個或1個以上之氟原子取代之烷基較佳為除了末端碳原子為CF2H-以外、其他所有碳原子皆被氟取代之氟烷基或全氟烷基;更佳為全氟烷基。 In the formula, Rf 2 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, preferably a carbon number 1 which may be substituted by one or more fluorine atoms. 3 alkyl. The above alkyl group which may be substituted by one or more fluorine atoms is preferably a fluoroalkyl group or a perfluoroalkyl group in which all carbon atoms are substituted by fluorine except for a terminal carbon atom of CF 2 H-; It is a perfluoroalkyl group.

PFPE表示-(OC4F8)s-(OC3F6)b-(OC2F4)c-(OCF2)d-,係全氟(聚)醚基。a、b、c及s分別表示構成聚合物主骨架之3種全氟聚醚的重複單元數,係互相獨立並為0以上、200以下之整數,而a、b、c及s的和至少為1,較佳為1至100。附以下標a、b、c或s並以括弧括起之各重複單元的存在順序在式中為任意順序。該等重複單元中,-(OC4F8)-為-(OCF2CF2CF2CF2)-、-(OCF(CF3)CF2CF2)-、-(OCF2CF(CF3)CF2)-、-(OCF2CF2CF(CF3))-、-(OC(CF3)2CF2)-、-(OCF2C(CF3)2)-、-(OCF(CF3)CF(CF3))-、-(OCF(C2F6)CF2)-及-(OCF2CF(C2F6))-之任一者,較佳為-(OCF2CF2CF2CF2)-。-(OC3F6)-為-(OCF2CF2CF2)-、-(OCF(CF3)CF2)-及-(OCF2CF(CF3))-之任一者,較佳為-(OCF2CF2CF2)-。-(OC2F4)-為-(OCF2CF2)-及-(OCF(CF3))-之任一者,較佳為-(OCF2CF2)-。 PFPE represents -(OC 4 F 8 ) s -(OC 3 F 6 ) b -(OC 2 F 4 ) c -(OCF 2 ) d -, a perfluoro(poly)ether group. a, b, c and s respectively represent the number of repeating units of the three perfluoropolyethers constituting the main skeleton of the polymer, which are independent of each other and are integers of 0 or more and 200 or less, and at least the sum of a, b, c and s It is 1, preferably 1 to 100. The order of existence of each repeating unit with the following a, b, c or s and enclosed in parentheses is in any order in the formula. In the repeating units, -(OC 4 F 8 )- is -(OCF 2 CF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 CF 2 )-, -(OCF 2 CF(CF 3 ) CF 2 )-, -(OCF 2 CF 2 CF(CF 3 ))-, -(OC(CF 3 ) 2 CF 2 )-, -(OCF 2 C(CF 3 ) 2 )-, -(OCF( Any of CF 3 )CF(CF 3 ))-, -(OCF(C 2 F 6 )CF 2 )- and -(OCF 2 CF(C 2 F 6 ))-, preferably -(OCF 2 CF 2 CF 2 CF 2 )-. -(OC 3 F 6 )- is -(OCF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 )-, and -(OCF 2 CF(CF 3 ))-, preferably Is -(OCF 2 CF 2 CF 2 )-. -(OC 2 F 4 )- is -(OCF 2 CF 2 )- and -(OCF(CF 3 ))-, preferably -(OCF 2 CF 2 )-.

T及R2為鍵結於Si的基。 T and R 2 are groups bonded to Si.

T表示羥基或可水解的基。可水解的基之例子可舉出-OA、-OCOA、-O-N=C(A)2、-N(A)2、-NHA、鹵素(該等式中,A表示取代或非取代之碳數1至3之烷基)等。羥基無特別限定,可為可水解的基水解所生成者。 T represents a hydroxyl group or a hydrolyzable group. Examples of the hydrolyzable group include -OA, -OCOA, -ON=C(A) 2 , -N(A) 2 , -NHA, halogen (in the formula, A represents a substituted or unsubstituted carbon number 1 to 3 alkyl groups) and the like. The hydroxyl group is not particularly limited and may be produced by hydrolysis of a hydrolyzable group.

R2表示氫原子或碳數1至22之烷基,較佳為碳數1至22之烷基,更佳為碳數1至3之烷基。 R 2 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, preferably an alkyl group having 1 to 22 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms.

n為1以上、3以下之整數。 n is an integer of 1 or more and 3 or less.

X分別獨立地表示2至7價之有機基。該X基可理解為式(2a)及(2b)中連結全氟聚醚部(PFPE部)與矽烷部(-SiTmR2 3-m)之連接子。因此,只要式(2a)及(2b)所示之化合物可安定存在,該X基可為任一2至7價之有機基。又,因應X基之價數,式中的α為1至6之整數,例如X為2價之有機基時,α為1,X為7價之有機基時,α為6。 X independently represents a 2- to 7-valent organic group. The X group can be understood as a linker connecting the perfluoropolyether portion (PFPE portion) and the decane portion (-SiT m R 2 3-m ) in the formulae (2a) and (2b). Therefore, as long as the compound represented by the formulae (2a) and (2b) can be stably present, the X group can be any organic group having a valence of 2 to 7. Further, in the valence of the X group, α in the formula is an integer of 1 to 6. For example, when X is a divalent organic group, α is 1, and X is a 7-valent organic group, and α is 6.

在較佳之態樣中,X為2至4價之有機基且α為1至3,更佳為X為2價之有機基且α為1。 In a preferred aspect, X is a 2- to 4-valent organic group and α is 1 to 3, more preferably X is a divalent organic group and α is 1.

上述X的例子並無特別限定,例如可舉出下式所示之基:-(R31)p-(X1)q-R32-[式中,R31表示-(CH2)s-、或是鄰-、間-或對-伸苯基,較佳為-(CH2)s-;R32表示-(CH2)t-、或是鄰-、間-或對-伸苯基,較佳為-(CH2)t-;X1表示-(X2)r-;所出現之各個X2係分別獨立,表示由-O-、-S-、鄰-、間-或對 -伸苯基、-C(O)O-、-CONR34-、-O-CONR34-、-NR34-、-Si(R33)2-、-(Si(R33)2O)m-Si(R33)2-及-(CH2)n-所成群組所選擇之基;所出現之各個R33係分別獨立,表示苯基或C1-6烷基,較佳為C1-6烷基,更佳為甲基;所出現之各個R34係分別獨立,表示氫原子、苯基或C1-6烷基(較佳為甲基);所出現之各個m係分別獨立,為1至100之整數,較佳為1至20之整數;所出現之各個n係分別獨立,為1至20之整數,較佳為1至6之整數,更佳為1至3之整數;s為1至20之整數,較佳為1至6之整數,更佳為1至3之整數,又更佳為1或2;t為1至20之整數,較佳為2至6之整數,更佳為2至3之整數;r為1至10之整數,較佳為1至5之整數,更佳為1至3之整數;p為0或1;q為0或1]。 The example of the above X is not particularly limited, and examples thereof include a group represented by the following formula: -(R 31 ) p -(X 1 ) q -R 32 - wherein R 31 represents -(CH 2 ) s - Or o-, m- or p-phenyl, preferably -(CH 2 ) s -; R 32 represents -(CH 2 ) t -, or o-, m- or p-phenylene Preferably, -(CH 2 ) t -; X 1 represents -(X 2 ) r -; each of the X 2 systems present is independent, representing -O-, -S-, ortho-, meta- or pair -phenyl, -C(O)O-, -CONR 34 -, -O-CONR 34 -, -NR 34 -, -Si(R 33 ) 2 -, -(Si(R 33 ) 2 O) m a group selected from the group consisting of -Si(R 33 ) 2 - and -(CH 2 ) n -; each of the R 33 groups present independently represents a phenyl group or a C 1-6 alkyl group, preferably C a 1-6 alkyl group, more preferably a methyl group; each of the R 34 groups which are present independently represents a hydrogen atom, a phenyl group or a C 1-6 alkyl group (preferably a methyl group); Independently, an integer from 1 to 100, preferably an integer from 1 to 20; each of the n-forms present is independently an integer from 1 to 20, preferably an integer from 1 to 6, more preferably from 1 to 3. An integer; s is an integer from 1 to 20, preferably an integer from 1 to 6, more preferably 1 An integer of up to 3, more preferably 1 or 2; t is an integer from 1 to 20, preferably an integer from 2 to 6, more preferably an integer from 2 to 3; r is an integer from 1 to 10, preferably An integer from 1 to 5, more preferably an integer from 1 to 3; p is 0 or 1; q is 0 or 1].

較佳係上述X為C1-20伸烷基、-R31-X3-R32-、或-X4-R32-[式中,R31及R32與上述相同]。 Preferably, the above X is a C 1-20 alkylene group, -R 31 -X 3 -R 32 -, or -X 4 -R 32 - wherein R 31 and R 32 are the same as defined above.

更佳係上述X為 C1-20伸烷基、-(CH2)s-X3-(CH2)t-、或-X4-(CH2)t-[式中,s及t與上述相同]。 More preferably, the above X is C 1-20 alkyl, -(CH 2 ) s -X 3 -(CH 2 ) t -, or -X 4 -(CH 2 ) t - [wherein, s and t are The same as above].

上述式中,X3表示-O-、-S-、-C(O)O-、-CONR34-、-O-CONR34-、-Si(R33)2-、-(Si(R33)2O)m-Si(R33)2-、-O-(CH2)u-(Si(R33)2O)m-Si(R33)2-、-CONR34-(CH2)u-(Si(R33)2O)m-Si(R33)2-、-CONR34-(CH2)v-N(R34)-、或-CONR34-(鄰-、間-或對-伸苯基)-Si(R33)2-[式中,R33、R34、m及v與上述相同,u為1至20之整數,較佳為2至6之整數,更佳為2至3之整數]。 In the above formula, X 3 represents -O-, -S-, -C(O)O-, -CONR 34 -, -O-CONR 34 -, -Si(R 33 ) 2 -, -(Si(R 33 2 O) m -Si(R 33 ) 2 -, -O-(CH 2 ) u -(Si(R 33 ) 2 O) m -Si(R 33 ) 2 -, -CONR 34 -(CH 2 ) u -(Si(R 33 ) 2 O) m -Si(R 33 ) 2 -, -CONR 34 -(CH 2 ) v -N(R 34 )-, or -CONR 34 -(o-, m- or p-Phenyl)-Si(R 33 ) 2 -[wherein, R 33 , R 34 , m and v are the same as above, and u is an integer of 1 to 20, preferably an integer of 2 to 6, more preferably Is an integer from 2 to 3.].

X3較佳為-O-。 X 3 is preferably -O-.

上述式中,X4表示-S-、-C(O)O-、-CONR34-、 -CONR34-(CH2)u-(Si(R33)2O)m-Si(R33)2-、-CONR34-(CH2)v-N(R34)-、或-CONR34-(鄰-、間-或對-伸苯基)-Si(R33)2-。 In the above formula, X 4 represents -S-, -C(O)O-, -CONR 34 -, -CONR 34 -(CH 2 ) u -(Si(R 33 ) 2 O) m -Si(R 33 ) 2 -, -CONR 34 -(CH 2 ) v -N(R 34 )-, or -CONR 34 -(o-, m- or p-phenylene)-Si(R 33 ) 2 -.

更佳係上述X為C1-20伸烷基、-(CH2)s-X3-(CH2)t-、或-X4-(CH2)t-[式中,各符號與上述相同]。 More preferably, the above X is a C 1-20 alkyl group, -(CH 2 ) s -X 3 -(CH 2 ) t -, or -X 4 -(CH 2 ) t - [wherein each symbol is as described above the same].

又更佳係上述X為C1-20伸烷基、-(CH2)s-O-(CH2)t-、-(CH2)s-(Si(R33)2O)m-Si(R33)2-(CH2)t-、-(CH2)s-O-(CH2)u-(Si(R33)2O)m-Si(R33)2-(CH2)t-、或-(CH2)s-O-(CH2)t-Si(R33)2-(CH2)u-Si(R33)2-(CvH2v)-[式中,各符號與上述相同,v為1至20之整數,較佳為2至6之整數,更佳為2至3之整數]。 More preferably, the above X is a C 1-20 alkyl group, -(CH 2 ) s -O-(CH 2 ) t -, -(CH 2 ) s -(Si(R 33 ) 2 O) m -Si (R 33 ) 2 -(CH 2 ) t -, -(CH 2 ) s -O-(CH 2 ) u -(Si(R 33 ) 2 O) m -Si(R 33 ) 2 -(CH 2 ) t -, or -(CH 2 ) s -O-(CH 2 ) t -Si(R 33 ) 2 -(CH 2 ) u -Si(R 33 ) 2 -(C v H 2v )-[wherein Each symbol is the same as above, and v is an integer of 1 to 20, preferably an integer of 2 to 6, more preferably an integer of 2 to 3.

上述式中,-(CvH2v)-可為直鏈或分枝鏈,例如-CH2CH2-、-CH2CH2CH2-、-CH(CH3)-、-CH(CH3)CH2-。 In the above formula, -(C v H 2v )- may be a straight or branched chain such as -CH 2 CH 2 -, -CH 2 CH 2 CH 2 -, -CH(CH 3 )-, -CH(CH 3 ) CH 2 -.

上述X基可經1個或1個以上由氟原子、C1-3烷基及C1-3氟烷基(較佳為C1-3全氟烷基)所選擇之取代基取代。 The above X group may be substituted by one or more substituents selected from a fluorine atom, a C 1-3 alkyl group and a C 1-3 fluoroalkyl group (preferably a C 1-3 perfluoroalkyl group).

上述X之具體例子,例如可舉出下述等:-CH2O(CH2)2-、-CH2O(CH2)3-、-CH2O(CH2)6-、 -CH2O(CH2)3Si(CH3)2OSi(CH3)2(CH2)2-、-CH2O(CH2)3Si(CH3)2OSi(CH3)2OSi(CH3)2(CH2)2-、-CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)2Si(CH3)2(CH2)2-、-CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)3Si(CH3)2(CH2)2-、-CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)10Si(CH3)2(CH2)2-、-CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)20Si(CH3)2(CH2)2-、-(CH2)2-、-(CH2)3-、-(CH2)4-、-(CH2)6-、-CONH-(CH2)3-、-CON(CH3)-(CH2)3-、-CON(Ph)-(CH2)3-(式中,Ph表示苯基)、-CONH-(CH2)6-、-CON(CH3)-(CH2)6-、-CON(Ph)-(CH2)6-(式中,Ph表示苯基)、-CONH-(CH2)2NH(CH2)3-、-CONH-(CH2)6NH(CH2)3-、-CH2O-CONH-(CH2)3-、-CH2O-CONH-(CH2)6-、-S-(CH2)3-、-(CH2)2S(CH2)3-、-CONH-(CH2)3Si(CH3)2OSi(CH3)2(CH2)2-、-CONH-(CH2)3Si(CH3)2OSi(CH3)2OSi(CH3)2(CH2)2-、 -CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)2Si(CH3)2(CH2)2-、-CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)3Si(CH3)2(CH2)2-、-CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)10Si(CH3)2(CH2)2-、-CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)20Si(CH3)2(CH2)2- -C(O)O-(CH2)3-、-C(O)O-(CH2)6-、-CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-(CH2)2-、-CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-CH(CH3)-、-CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-(CH2)3-、-CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-CH(CH3)-CH2-、 Specific examples of the above X include, for example, -CH 2 O(CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 -, -CH 2 O(CH 2 ) 6 -, -CH 2 O(CH 2 ) 3 Si(CH 3 ) 2 OSi(CH 3 ) 2 (CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 Si(CH 3 ) 2 OSi(CH 3 ) 2 OSi(CH 3 2 (CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O) 2 Si(CH 3 ) 2 (CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O) 3 Si(CH 3 ) 2 (CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 Si(CH 3 2 O(Si(CH 3 ) 2 O) 10 Si(CH 3 ) 2 (CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O 20 Si(CH 3 ) 2 (CH 2 ) 2 -, -(CH 2 ) 2 -, -(CH 2 ) 3 -, -(CH 2 ) 4 -, -(CH 2 ) 6 -, -CONH- (CH 2 ) 3 -, -CON(CH 3 )-(CH 2 ) 3 -, -CON(Ph)-(CH 2 ) 3 - (wherein, Ph represents a phenyl group), -CONH-(CH 2 ) 6 -, -CON(CH 3 )-(CH 2 ) 6 -, -CON(Ph)-(CH 2 ) 6 - (wherein, Ph represents a phenyl group), -CONH-(CH 2 ) 2 NH(CH 2 ) 3 -, -CONH-(CH 2 ) 6 NH(CH 2 ) 3 -, -CH 2 O-CONH-(CH 2 ) 3 -, -CH 2 O-CONH-(CH 2 ) 6 -, - S-(CH 2 ) 3 -, -(CH 2 ) 2 S(CH 2 ) 3 -, -CONH-(CH 2 ) 3 Si(CH 3 ) 2 OSi(CH 3 ) 2 (CH 2 ) 2 - , -CONH-(CH 2 ) 3 Si(CH 3 ) 2 OSi(CH 3 ) 2 OSi(CH 3 ) 2 (CH 2 ) 2 -, -CONH-(CH 2 ) 3 Si(CH 3 ) 2 O( Si(CH 3 ) 2 O) 2 Si(CH 3 ) 2 (CH 2 ) 2 -, -CONH-(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O) 3 Si(CH 3 ) 2 (CH 2 ) 2 -, -CONH-(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O) 10 Si(CH 3 ) 2 (CH 2 ) 2 -, -CONH -(CH 2 ) 3 Si(CH 3 ) 2 O(Si(CH 3 ) 2 O) 20 Si(CH 3 ) 2 (CH 2 ) 2 - -C(O)O-(CH 2 ) 3 -, - C(O)O-(CH 2 ) 6 -, -CH 2 -O-(CH 2 ) 3 -Si(CH 3 ) 2 -(CH 2 ) 2 -Si(CH 3 ) 2 -(CH 2 ) 2 -, -CH 2 -O-(CH 2 ) 3 -Si(CH 3 ) 2 -(CH 2 ) 2 -Si(CH 3 ) 2 -CH(CH 3 )-, -CH 2 -O-(CH 2 3 -Si(CH 3 ) 2 -(CH 2 ) 2 -Si(CH 3 ) 2 -(CH 2 ) 3 -, -CH 2 -O-(CH 2 ) 3 -Si(CH 3 ) 2 -( CH 2 ) 2 -Si(CH 3 ) 2 -CH(CH 3 )-CH 2 -,

又,其他X基之例子例如可舉出下述之基: Further, examples of other X-based examples include the following:

[式中,D為由下述所選擇的基:-CH2O(CH2)2-、-CH2O(CH2)3-、-CF2O(CH2)3-、-(CH2)2-、-(CH2)3-、-(CH2)4-、-CONH-(CH2)3-、-CON(CH3)-(CH2)3-、-CON(Ph)-(CH2)3-(式中,Ph表示苯基)、及 ;E為-(CH2)n-(n為2至6之整數);D係鍵結於式(2a)及(2b)之分子主鏈之PFPE,E係鍵結於Si原子]。 Wherein D is a group selected from the group consisting of -CH 2 O(CH 2 ) 2 -, -CH 2 O(CH 2 ) 3 -, -CF 2 O(CH 2 ) 3 -, -(CH 2 ) 2 -, -(CH 2 ) 3 -, -(CH 2 ) 4 -, -CONH-(CH 2 ) 3 -, -CON(CH 3 )-(CH 2 ) 3 -, -CON(Ph) -(CH 2 ) 3 - (wherein, Ph represents a phenyl group), and E is -(CH 2 ) n - (n is an integer from 2 to 6); D is bonded to the PFPE of the molecular backbone of the formulae (2a) and (2b), and the E is bonded to the Si atom].

再者,其他X基之例子可舉出下述之基: Furthermore, examples of other X-based examples include the following:

[式中,於各X基,T中之任一者係鍵結於式(2a)及(2b)之分子主鏈之PFPE之以下的基:-CH2O(CH2)2-、-CH2O(CH2)3-、-CF2O(CH2)3-、 -(CH2)2-、-(CH2)3-、-(CH2)4-、-CONH-(CH2)3-、-CON(CH3)-(CH2)3-、-CON(Ph)-(CH2)3-(式中,Ph表示苯基)、或 ; 且其他至少1個T為鍵結於式(2a)及(2b)之分子主鏈之Si原子的-(CH2)n-(n為2至6之整數)而存在時,剩餘T係分別獨立為甲基或苯基]。 [wherein, each of the X groups and T is a group bonded to the PFPE of the molecular main chain of the formulae (2a) and (2b): -CH 2 O(CH 2 ) 2 -, - CH 2 O(CH 2 ) 3 -, -CF 2 O(CH 2 ) 3 -, -(CH 2 ) 2 -, -(CH 2 ) 3 -, -(CH 2 ) 4 -, -CONH-(CH 2 ) 3 -, -CON(CH 3 )-(CH 2 ) 3 -, -CON(Ph)-(CH 2 ) 3 - (wherein, Ph represents a phenyl group), or And at least one other T is -(CH 2 ) n - (n is an integer of 2 to 6) which is bonded to the Si atom of the molecular chain of the formulae (2a) and (2b), and the remaining T system Separately methyl or phenyl].

較佳係式(2a)及(2b)所示化合物為下式(2a’)及(2b’)所示化合物。 Preferred compounds of the formulae (2a) and (2b) are compounds represented by the following formulas (2a') and (2b').

上述式中,Rf2、T、R2、n、s、a、b及c係與上述式(2a)及(2b)之相關記載同義。 In the above formula, Rf 2 , T, R 2 , n, s, a, b and c are synonymous with the correlation between the above formulas (2a) and (2b).

d及f為0或1。 d and f are 0 or 1.

h及j為1或2。 h and j are 1 or 2.

i及k為2以上、20以下之整數。 i and k are integers of 2 or more and 20 or less.

Z表示氟原子或低級氟烷基。低級氟烷基例如為碳數1至3之氟烷基,較佳為碳數1至3之全氟烷基,更佳為三氟甲基、五氟乙基,又更佳為三氟甲基。代表性者係Z為氟原子且d及f為1。 Z represents a fluorine atom or a lower fluoroalkyl group. The lower fluoroalkyl group is, for example, a fluoroalkyl group having 1 to 3 carbon atoms, preferably a perfluoroalkyl group having 1 to 3 carbon atoms, more preferably a trifluoromethyl group or a pentafluoroethyl group, and still more preferably a trifluoromethyl group. base. Representative Z is a fluorine atom and d and f are 1.

具有鍵結於Si且可水解的基及全氟聚醚基之含氟矽烷化合物之又另外的例子,可舉出以下通式(3)所示化合物(可為1種或2種以上之混合物)。 Further, another example of the fluorine-containing decane compound having a hydrolyzable group bonded to Si and a perfluoropolyether group may be a compound represented by the following formula (3) (may be one type or a mixture of two or more types) ).

Rf3[-L3 p-X-R31-Si(OR32)3]q‧‧‧(3) Rf 3 [-L 3 p -XR 31 -Si(OR 32 ) 3 ] q ‧‧‧(3)

式中,Rf3表示全氟聚醚基,較佳為碳數1至300之全氟聚醚基:但鍵結於末端碳原子之氟原子的全部或一部分可為氫原子。 In the formula, Rf 3 represents a perfluoropolyether group, preferably a perfluoropolyether group having 1 to 300 carbon atoms: but all or a part of the fluorine atom bonded to the terminal carbon atom may be a hydrogen atom.

p表示0或1。 p represents 0 or 1.

q表示1或2。 q means 1 or 2.

R31表示伸烷基,較佳為碳數1至3之伸烷基。 R 31 represents an alkylene group, preferably an alkylene group having 1 to 3 carbon atoms.

-OR32係鍵結於Si之烷氧基,R32表示烷基,較佳為碳數1至3之烷基。 The -OR 32 is bonded to the alkoxy group of Si, and R 32 represents an alkyl group, preferably an alkyl group having 1 to 3 carbon atoms.

L3表示-CO-。 L 3 represents -CO-.

X表示由-O-、-NR33-、-S-、-SO2-、-SO2NR33-及-NR33CO-所成群組所選擇之基,較佳為-O-。R33表示氫原子或碳數3以下之烷基。 X represents a group selected from the group consisting of -O-, -NR 33 -, -S-, -SO 2 -, -SO 2 NR 33 - and -NR 33 CO-, preferably -O-. R 33 represents a hydrogen atom or an alkyl group having 3 or less carbon atoms.

又,本發明所使用之含氟矽烷化合物可不具有全氟聚醚基。具有鍵結於Si且可水解的基之含氟矽烷化合物之其他例子,可舉出以下通式(4)所示化合物(可為1種或2種以上之混合物)。 Further, the fluorine-containing decane compound used in the present invention may not have a perfluoropolyether group. Other examples of the fluorine-containing decane compound having a group which is bonded to Si and which is hydrolyzable include a compound represented by the following formula (4) (one or a mixture of two or more).

(Rf4-L4)rSiTnR4 4-n-r‧‧‧(4) (Rf 4 -L 4 ) r SiT n R 4 4-nr ‧‧‧(4)

式中,(Rf4-L4)-、T及R4皆為鍵結於Si的基。 In the formula, (Rf 4 - L 4 )-, T and R 4 are all groups bonded to Si.

Rf4表示碳數1至20之直鏈、分枝、環狀之含氟烷基、或碳數6至14之含氟芳香族基。 Rf 4 represents a linear, branched, cyclic fluorine-containing alkyl group having 1 to 20 carbon atoms or a fluorine-containing aromatic group having 6 to 14 carbon atoms.

L4表示碳數10以下之2價連結基。2價連結基較佳為碳數1至10、更佳為碳數1至5之伸烷基,該伸烷基可為直鏈、分枝、取代(例如以鹵原子、羥基、巰基、羧基、環氧基、烷基、芳基等取代)或無取代者,並可於內部具有連結基(例如醚、酯、醯胺)。 L 4 represents a divalent linking group having a carbon number of 10 or less. The divalent linking group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and the alkylene group may be linear, branched or substituted (for example, a halogen atom, a hydroxyl group, a thiol group, or a carboxyl group). , epoxy, alkyl, aryl, etc. substituted or unsubstituted, and may have a linking group (such as ether, ester, decylamine) inside.

T表示羥基或可水解的基。可水解的基之例子可舉出-OA、-OCOA、-O-N=C(A)2、-N(A)2、-NHA、鹵素(該等式中,A表示取代或非取代之碳數1至3之烷基)等,較佳為-OA(烷氧基)。A之例中包括甲基、乙基、丙基、異丙基等非取代烷基;氯甲基等取代烷基。該等中,較佳為烷基,尤其是非取代烷基,更佳為甲基。羥基則無特別限定,只要為可水解的基水解所生成者即可。 T represents a hydroxyl group or a hydrolyzable group. Examples of the hydrolyzable group include -OA, -OCOA, -ON=C(A) 2 , -N(A) 2 , -NHA, halogen (in the formula, A represents a substituted or unsubstituted carbon number The alkyl group of 1 to 3) is preferably -OA(alkoxy). Examples of A include unsubstituted alkyl groups such as methyl, ethyl, propyl and isopropyl; and substituted alkyl groups such as chloromethyl. Among these, an alkyl group, especially an unsubstituted alkyl group, is preferred, and a methyl group is more preferred. The hydroxyl group is not particularly limited as long as it is hydrolyzed by a hydrolyzable group.

R4表示氫原子或碳數1至22之烷基,較佳為碳數1至22之烷基,更佳為碳數1至3之烷基。 R 4 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, preferably an alkyl group having 1 to 22 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms.

n及r為1以上、3以下之整數,n及r的和為4以下。 n and r are integers of 1 or more and 3 or less, and the sum of n and r is 4 or less.

此外,r可為0,但就發揮疏水性、疏油性、抗污性、表面平滑性(或潤滑性)等功能而言,r較佳為1以上、3以下之整數。 Further, r may be 0, but in terms of functions such as hydrophobicity, oleophobicity, stain resistance, surface smoothness (or lubricity), r is preferably an integer of 1 or more and 3 or less.

具有鍵結於Si且可水解的基及全氟聚醚基之含氟矽烷化合物的其他例子,可舉出以下通式(5a)或(5b)所示化合物(可為1種或2種以上之混合物)。 Other examples of the fluorine-containing decane compound having a hydrolyzable group and a perfluoropolyether group bonded to Si include compounds represented by the following formula (5a) or (5b) (one or two or more) a mixture).

RfRf 55 -PFPE-X-(SiQ-PFPE-X-(SiQ kk YY 3-k3-k )) αα ‧‧‧(5a) ‧‧‧(5a)

(Y(Y 3-k3-k QQ kk Si)Si) αα -X-PFPE-X-(SiQ-X-PFPE-X-(SiQ kk YY 3-k3-k )) αα ‧‧‧(5b)‧‧‧(5b)

該等式中,Rf5表示可經1個或1個以上之氟原子 取代之碳數1至16之烷基,較佳為可經1個或1個以上之氟原子取代之碳數1至3之烷基。上述可經1個或1個以上之氟原子取代之烷基,較佳為除了末端碳原子為CF2H-以外其他所有碳原子皆被氟取代之氟烷基、或全氟烷基,更佳為全氟烷基。 In the formula, Rf 5 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, preferably a carbon number 1 which may be substituted by one or more fluorine atoms. 3 alkyl. The above alkyl group which may be substituted by one or more fluorine atoms is preferably a fluoroalkyl group or a perfluoroalkyl group in which all carbon atoms are substituted by fluorine except for a terminal carbon atom of CF 2 H-. Preferably, it is a perfluoroalkyl group.

PFPE分別獨立表示-(OC4F8)a-(OC3F6)b-(OC2F4)c-(OCF2)d-, 在此,a、b、c及d分別獨立而為0以上200以下之整數,a、b、c及d的和至少為1,較佳為1至100。附以下標a、b、c或d並以括弧括起之各重複單元的存在順序在式中為任意順序。該等重複單元中,-(OC4F8)-為-(OCF2CF2CF2CF2)-、-(OCF(CF3)CF2CF2)-、-(OCF2CF(CF3)CF2)-、-(OCF2CF2CF(CF3))-、-(OC(CF3)2CF2)-、-(OCF2C(CF3)2)-、-(OCF(CF3)CF(CF3))-、-(OCF(C2F6)CF2)-及-(OCF2CF(C2F6))-之任一者,較佳為-(OCF2CF2CF2CF2)-。-(OC3F6)-可為-(OCF2CF2CF2)-、-(OCF(CF3)CF2)-及-(OCF2CF(CF3))-之任一者,較佳為-(OCF2CF2CF2)-。-(OC2F4)-為-(OCF2CF2)-及-(OCF(CF3))-之任一者,較佳為-(OCF2CF2)-。 PFPE independently represents -(OC 4 F 8 ) a -(OC 3 F 6 ) b -(OC 2 F 4 ) c -(OCF 2 ) d -, where a, b, c and d are independent An integer of 0 or more and 200 or less, and a sum of a, b, c and d is at least 1, preferably 1 to 100. The order of existence of each repeating unit with the following a, b, c or d and enclosed in parentheses is in any order in the formula. In the repeating units, -(OC 4 F 8 )- is -(OCF 2 CF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 CF 2 )-, -(OCF 2 CF(CF 3 ) CF 2 )-, -(OCF 2 CF 2 CF(CF 3 ))-, -(OC(CF 3 ) 2 CF 2 )-, -(OCF 2 C(CF 3 ) 2 )-, -(OCF( Any of CF 3 )CF(CF 3 ))-, -(OCF(C 2 F 6 )CF 2 )- and -(OCF 2 CF(C 2 F 6 ))-, preferably -(OCF 2 CF 2 CF 2 CF 2 )-. -(OC 3 F 6 )- may be any of -(OCF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 )-, and -(OCF 2 CF(CF 3 ))- Good for - (OCF 2 CF 2 CF 2 )-. -(OC 2 F 4 )- is -(OCF 2 CF 2 )- and -(OCF(CF 3 ))-, preferably -(OCF 2 CF 2 )-.

X及α係與上述式(2a)及(2b)之相關記載相同。 The X and α systems are the same as those described in the above formulas (2a) and (2b).

在較佳態樣中,X為2至4價之有機基且α為1至3,更佳係X為2價之有機基且α為1。 In a preferred embodiment, X is a 2- to 4-valent organic group and α is 1 to 3, more preferably X is a divalent organic group and α is 1.

所出現之各個Y係分別獨立,表示氫原子、羥基、可水解的基或烴基。可水解的基可舉出與上述R12之相關記載相同者。羥基並無特別限定,可為可水解的基水解所生成者。 Each of the Y lines present is independent of each other and represents a hydrogen atom, a hydroxyl group, a hydrolyzable group or a hydrocarbon group. The hydrolyzable group is the same as that described in the above R 12 . The hydroxyl group is not particularly limited and may be those produced by hydrolysis of a hydrolyzable group.

上述Y較佳為羥基、-OR(式中,R表示C1-12烷基,較佳為C1-6烷基,更佳為C1-3烷基)、C1-12烷基、C2-12烯基、C2-12炔基或苯基,更佳為-OCH3、-OCH2CH3、-OCH(CH3)2。該等基例如可 經1個或1個以上由氟原子、C1-6烷基、C2-6烯基及C2-6炔基所選擇之取代基所取代。 The above Y is preferably a hydroxyl group, -OR (wherein R represents a C 1-12 alkyl group, preferably a C 1-6 alkyl group, more preferably a C 1-3 alkyl group), a C 1-12 alkyl group, C 2-12 alkenyl, C 2-12 alkynyl or phenyl, more preferably -OCH 3 , -OCH 2 CH 3 , -OCH(CH 3 ) 2 . These groups may be substituted, for example, by one or more substituents selected from a fluorine atom, a C 1-6 alkyl group, a C 2-6 alkenyl group and a C 2-6 alkynyl group.

上述所出現之各個Q係分別獨立表示-Z-SiR13 pR14 3-pEach of the Q systems appearing above independently represents -Z-SiR 13 p R 14 3-p .

上述所出現之各個Z係分別獨立表示2價之有機基。較佳係Z為C1-6伸烷基、-(CH2)s’-O-(CH2)t’-(式中,s’為1至6之整數,t’為1至6之整數)或-伸苯基-(CH2)u’-(式中,u’為0至6之整數),更佳為C1-3伸烷基。該等基例如可經1個或1個以上由氟原子、C1-6烷基、C2-6烯基及C2-6炔基所選擇之取代基所取代。 Each of the Z systems appearing above independently represents a divalent organic group. Preferably, Z is C 1-6 alkyl, -(CH 2 ) s' -O-(CH 2 ) t' - (wherein s' is an integer from 1 to 6, and t' is from 1 to 6 Integer) or -phenyl-(CH 2 ) u' - (wherein u' is an integer from 0 to 6), more preferably C 1-3 alkyl. These groups may be substituted, for example, by one or more substituents selected from a fluorine atom, a C 1-6 alkyl group, a C 2-6 alkenyl group and a C 2-6 alkynyl group.

上述所出現之各個R13係分別獨立表示羥基或可水解的基。R13較佳為-OR(式中,R表示取代或非取代之C1-3烷基,更佳為甲基)。 Each of the R 13 groups which appear above independently represents a hydroxyl group or a hydrolyzable group. R 13 is preferably -OR (wherein R represents a substituted or unsubstituted C 1-3 alkyl group, more preferably a methyl group).

上述所出現之各個R14係分別獨立表示碳數1至22之烷基或Q’。 Each of the R 14 groups appearing above independently represents an alkyl group or Q' having a carbon number of 1 to 22.

上述Q’係與Q同義, The above Q' is synonymous with Q,

在各個Q及Q’中,上述p分別獨立為0至3之整數,而p的總和為1以上。各Q或Q'中,在上述p為0時,其Q或Q’中之Si係不具有羥基及可水解的基。如種不存在羥基及可水解的基之情形,會使與基材之接著力降低,且耐久性降低。因此,Q或Q’中之至少1個Si必須具有至少1個之羥基或可水解的基。換言之,上述p的總和至少要為1以上。 In each of Q and Q', the above p is independently an integer of 0 to 3, and the sum of p is 1 or more. In each of Q or Q', when the above p is 0, the Si in Q or Q' does not have a hydroxyl group or a hydrolyzable group. In the case where a hydroxyl group and a hydrolyzable group are not present, the adhesion to the substrate is lowered and the durability is lowered. Therefore, at least one of Si or Q' must have at least one hydroxyl group or hydrolyzable group. In other words, the sum of the above p is at least 1 or more.

鍵結於具有全氟聚醚基之分子之主鏈末端的Si原子之-Q-Q’0-5鏈,其末端之Q’(不存在Q’時則為Q)中,上述p較佳為2以上,例如2或3,更佳為3。在此,末端不僅指-Q-Q’0-5鏈的主鏈之末端,也包括分枝鏈之末端。亦即,-Q-Q’0-5鏈形成 分枝鏈時,係存在複數末端。 In the Q-Q' 0-5 chain of the Si atom bonded to the end of the main chain of the molecule having a perfluoropolyether group, the terminal Q' (Q in the absence of Q') is preferably 2 The above is, for example, 2 or 3, more preferably 3. Here, the terminus refers not only to the end of the main chain of the -Q- Q'0-5 chain but also to the end of the branched chain. That is, when the -Q-Q' 0-5 chain forms a branched chain, there are multiple ends.

上述Q中,R14至少1個為Q’時,Q中存在有2 個以上透過Z基而直鏈狀連結之Si原子。透過該Z基而直鏈狀連結之Si的原子數最多為5個。又,「Q中透過Z基而直鏈狀連結之Si原子」係等於Q中直鏈狀連結之-Z-Si-的重複數。 In the above Q, when at least one of R 14 is Q', two or more Si atoms which are linearly linked by the Z group are present in Q. The number of atoms of Si linearly connected through the Z group is at most five. Further, "Si atoms which are linearly connected by a Z group in Q" are equal to the number of repetitions of -Z-Si- which are linearly linked in Q.

上述k為由1至3所選擇之整數,較佳為2以上, 更佳為3。藉由使k為3,可使與基材之鍵結更堅固,而得到高磨擦耐久性。 The above k is an integer selected from 1 to 3, preferably 2 or more. More preferably 3. By making k 3, the bonding to the substrate can be made stronger, resulting in high friction durability.

所使用之矽烷化合物可因應矽烷系膜所求功能,具 體而言,係因應疏水性、疏油性、抗污性、表面平滑性(或潤滑性)等而適宜選擇。 The decane compound used can function according to the function of the decane film. The body is suitably selected for its hydrophobicity, oleophobicity, stain resistance, surface smoothness (or lubricity), and the like.

具體之矽烷化合物例如可使用大金工業股份有限公 司之OPTOOL(註冊商標)系列(例如OPTOOL DSX-E、OPTOOL AES、OFTOOL UD500等),或信越化學工業股份有限公司之KY-130、KY-178、KY-185,或是道康寧公司之DC2634等。 For specific decane compounds, for example, Daikin Industries Co., Ltd. can be used. OPTOOL (registered trademark) series (such as OPTOOL DSX-E, OPTOOL AES, OFTOOL UD500, etc.), or KY-130, KY-178, KY-185 of Shin-Etsu Chemical Co., Ltd., or DC2634 of Dow Corning Corporation .

前軀物膜之形成可適用以下實施方式:將如上述之 具有鍵結於Si且可水解的基之矽烷化合物,以單獨或作為含有該化合物之膜形成用組成物之方式被覆基材表面。 The formation of the precursor film can be applied to the following embodiments: The decane compound having a group which is bonded to Si and hydrolyzable is coated on the surface of the substrate either alone or as a film-forming composition containing the compound.

上述膜形成用組成物係可視為含氟油之氟聚醚化合 物,較佳為可含有全氟聚醚化合物(以下稱為「含氟油」)。含氟油有助於使矽烷系膜之表面平滑性更為提昇。 The above film-forming composition can be regarded as a fluorine-containing polyether compound of a fluorine-containing oil. Preferably, the substance may contain a perfluoropolyether compound (hereinafter referred to as "fluorine-containing oil"). The fluorine-containing oil contributes to an increase in the surface smoothness of the decane-based film.

在膜形成用組成物中,相對於上述矽烷系化合物合 計100質量份,含氟油係例如含有0至80質量份,較佳為含有0至40質量份。 In the film forming composition, the above decane-based compound is combined The fluorine-containing oil is, for example, contained in an amount of from 0 to 80 parts by mass, preferably from 0 to 40 parts by mass, based on 100 parts by mass.

該含氟油可舉出以下通式(6)所示化合物(全氟聚醚化合物)。 The fluorine-containing oil may, for example, be a compound represented by the following formula (6) (perfluoropolyether compound).

R21-(OC4F8)s’-(OC3F6)a’-(OC2F4)b’-(OCF2)c’-R22‧‧‧(6) R 21 -(OC 4 F 8 ) s' -(OC 3 F 6 ) a' -(OC 2 F 4 ) b' -(OCF 2 ) c' -R 22 ‧‧‧(6)

式中,R21表示可經1個或1個以上之氟原子取代之碳數1至16之烷基,較佳為可經1個或1個以上之氟原子取代之碳數1至3之烷基。上述可經1個或1個以上之氟原子取代之烷基,較佳為除了末端碳原子為CF2H-以外其他所有碳原子皆被氟取代之氟烷基或全氟烷基,更佳為全氟烷基。 In the formula, R 21 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, preferably a carbon number of 1 to 3 which may be substituted by one or more fluorine atoms. alkyl. The above alkyl group which may be substituted by one or more fluorine atoms is preferably a fluoroalkyl group or a perfluoroalkyl group in which all carbon atoms are substituted by fluorine except for a terminal carbon atom of CF 2 H-. It is a perfluoroalkyl group.

R22表示氫原子、氟原子、或可經1個或1個以上之氟原子取代之碳數1至16之烷基,較佳為可經1個或1個以上之氟原子取代之碳數1至3之烷基。上述可經1個或1個以上之氟原子取代之烷基,較佳為除了末端碳原子為CF2H-以外其他所有碳原子皆被氟取代之氟烷基或全氟烷基,更佳為全氟烷基。 R 22 represents a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, preferably a carbon number which may be substituted by one or more fluorine atoms. Alkyl groups of 1 to 3. The above alkyl group which may be substituted by one or more fluorine atoms is preferably a fluoroalkyl group or a perfluoroalkyl group in which all carbon atoms are substituted by fluorine except for a terminal carbon atom of CF 2 H-. It is a perfluoroalkyl group.

a’、b’、c’及s’分別表示構成聚合物主骨架之全氟聚醚的3種重複單元數,係互相獨立並為0以上、300以下之整數,a’、b’、c’及s’的和至少為1,較佳為1至100。附以下標a’、b’、c’或s’並以括弧括起之各重複單元的存在順序在式中為任意順序。該等重複單元中,-(OC4F8)-為-(OCF2CF2CF2CF2)-、-(OCF(CF3)CF2CF2)-、-(OCF2CF(CF3)CF2)-、-(OCF2CF2CF(CF3))-、-(OC(CF3)2CF2)-、-(OCF2C(CF3)2)-、-(OCF(CF3)CF(CF3))-、-(OCF(C2F6)CF2)-及-(OCF2CF(C2F6))-中之任一者,較佳為-(OCF2CF2CF2CF2)-。-(OC3F6)-為-(OCF2CF2CF2)-、-(OCF(CF3)CF2)-及-(OCF2CF(CF3))-之任一者,較佳為-(OCF2CF2CF2)-。-(OC2F4)-為-(OCF2CF2)-及-(OCF(CF3))-之任一者,較佳為-(OCF2CF2)-。 a', b', c', and s' respectively represent the number of three repeating units of the perfluoropolyether constituting the main skeleton of the polymer, and are independent of each other and are integers of 0 or more and 300 or less, a', b', and c. The sum of 'and s' is at least 1, preferably from 1 to 100. The order of existence of each repeating unit with the following a', b', c' or s' and enclosed in parentheses is in any order in the formula. In the repeating units, -(OC 4 F 8 )- is -(OCF 2 CF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 CF 2 )-, -(OCF 2 CF(CF 3 ) CF 2 )-, -(OCF 2 CF 2 CF(CF 3 ))-, -(OC(CF 3 ) 2 CF 2 )-, -(OCF 2 C(CF 3 ) 2 )-, -(OCF( Any of CF 3 )CF(CF 3 ))-, -(OCF(C 2 F 6 )CF 2 )- and -(OCF 2 CF(C 2 F 6 ))-, preferably -(OCF 2 CF 2 CF 2 CF 2 )-. -(OC 3 F 6 )- is -(OCF 2 CF 2 CF 2 )-, -(OCF(CF 3 )CF 2 )-, and -(OCF 2 CF(CF 3 ))-, preferably Is -(OCF 2 CF 2 CF 2 )-. -(OC 2 F 4 )- is -(OCF 2 CF 2 )- and -(OCF(CF 3 ))-, preferably -(OCF 2 CF 2 )-.

上述通式(6)所示全氟聚醚化合物之例子,可舉出以下通式(6a)或(6b)中任一者所示之化合物(可為1種或2種以上之混合物)。 Examples of the perfluoropolyether compound represented by the above formula (6) include a compound represented by any one of the following formula (6a) or (6b) (may be one type or a mixture of two or more types).

R21-(OCF2CF2CF2)a”-R22‧‧‧(6a)、R21-(OCF2CF2CF2CF2)s”-(OCF2CF2CF2)a”-(OCF2CF2)b”-(OCF2)c”-R22‧‧‧(6b) R 21 -(OCF 2 CF 2 CF 2 ) a" -R 22 ‧‧‧(6a), R 21 -(OCF 2 CF 2 CF 2 CF 2 ) s" -(OCF 2 CF 2 CF 2 ) a" - (OCF 2 CF 2 ) b" -(OCF 2 ) c" -R 22 ‧‧‧(6b)

該等式中,R21及R22係如上述;式(6a)中,a”為1以上、100以下之整數;式(6b)中,a”及s”分別獨立並為0以上、30以下之整數,b”及c”分別獨立並為1以上300以下之整數。該等式中,附以下標a”、b”、c”或s”並以括弧括起之各重複單元的存在順序在式中為任意順序。 In the equation, R 21 and R 22 are as defined above; in the formula (6a), a" is an integer of 1 or more and 100 or less; in the formula (6b), a" and s" are independently 0 or more and 30. The following integers, b" and c", are each independently an integer of 1 or more and 300 or less. In the equation, the following a", b", c" or s" is attached and the existence of each repeating unit enclosed in parentheses The order is in any order in the formula.

通式(6a)所示之化合物及通式(6b)所示之化合物可分別單獨使用,也可組合使用。相較於通式(6a)所示之化合物,使用通式(6b)所示之化合物可得更高之表面平滑性,故為較佳。使用該等組合時,較佳為以質量比1:1至1:30使用通式(6a)所示化合物與通式(6b)所示化合物。根據該質量比,可得表面平滑性與磨擦耐久性之平衡優異的矽烷系膜。 The compound represented by the formula (6a) and the compound represented by the formula (6b) may be used singly or in combination. It is preferred to use a compound represented by the formula (6b) to obtain a higher surface smoothness than the compound represented by the formula (6a). When such a combination is used, it is preferred to use a compound represented by the formula (6a) and a compound of the formula (6b) at a mass ratio of 1:1 to 1:30. According to this mass ratio, a decane-based film excellent in the balance between surface smoothness and friction durability can be obtained.

又,從其他觀點來看,含氟油可為通式Rf1-F(式中,Rf1係如上述)所示化合物。就可獲得與上述通式(1a)、(1b)、(2a)、(2b)、(3)及(4)之任一者所示的化合物之高親和性之點而言,係以Rf1-F所示化合物為較佳。 Further, from another viewpoint, the fluorine-containing oil may be a compound represented by the formula: Rf 1 -F (wherein Rf 1 is as defined above). The point of obtaining high affinity with the compound represented by any one of the above formulas (1a), (1b), (2a), (2b), (3), and (4) is based on Rf. The compound represented by 1- F is preferred.

含氟油可具有1000至30000之平均分子量。藉此,可得到高表面平滑性。就代表而言,為通式(6a)所示化合物時,較佳為具有2000至6000之平均分子量者,為通式(6b)所示化合物 時,較佳為具有8000至30000之平均分子量者。在該等平均分子量之範圍,可獲得高表面平滑性。 The fluorine-containing oil may have an average molecular weight of from 1,000 to 30,000. Thereby, high surface smoothness can be obtained. In the case of the compound of the formula (6a), it is preferably a compound of the formula (6b), preferably having an average molecular weight of from 2,000 to 6,000. In the case, it is preferred to have an average molecular weight of 8,000 to 30,000. In the range of these average molecular weights, high surface smoothness can be obtained.

又,上述膜形成用組成物係可進一步含有可被視為聚矽氧油之聚矽氧化合物(以下稱為「聚矽氧油」)。聚矽氧油可提昇矽烷系膜之表面平滑性。 Moreover, the film formation composition may further contain a polyfluorene oxide compound (hereinafter referred to as "polyoxyxane oil") which can be regarded as a polyoxygenated oil. Polyoxygenated oil can improve the surface smoothness of the decane film.

膜形成用組成物中,相對於上述矽烷化合物合計100質量份,聚矽氧油例如可含有0至300質量份,較佳為50至200質量份。 The film-forming composition may contain, for example, from 0 to 300 parts by mass, preferably from 50 to 200 parts by mass, per 100 parts by mass of the total of the decane compound.

該聚矽氧油例如可使用矽氧烷鍵結為2000以下之直鏈狀或環狀聚矽氧油。直鏈狀聚矽氧油可為所謂純聚矽氧油或改質聚矽氧油。純聚矽氧油可舉出:二甲基聚矽氧油、甲基苯基聚矽氧油、甲基氫聚矽氧油。改質聚矽氧油可舉出:將純聚矽氧油經烷基、芳烷基、聚醚、高級脂肪酸酯、氟烷基、胺基、環氧基、羧基、醇等改質者。環狀聚矽氧油例如可舉出:環狀二甲基矽氧烷油等。 The polyoxyxene oil can be, for example, a linear or cyclic polyoxyxene oil bonded to 2,000 or less using a decane. The linear polyoxygenated oil may be a so-called pure polyoxygenated oil or a modified polyoxygenated oil. The pure polyoxygenated oil may, for example, be dimethylpolyphthalic acid oil, methylphenylpolyphosphonium oil or methylhydrogenpolyoxygenated oil. The modified polyoxyxene oil can be exemplified by the modification of pure polyoxygenated oil via alkyl, aralkyl, polyether, higher fatty acid ester, fluoroalkyl, amine, epoxy, carboxyl, alcohol, etc. . Examples of the cyclic polysiloxane oil include cyclic dimethyl siloxane oil and the like.

前軀物膜之被覆方法並無特別限定。例如可使用濕潤被覆法及乾燥被覆法,但就生產性高而言,較佳為濕潤被覆法。 The method of coating the precursor film is not particularly limited. For example, a wet coating method and a dry coating method can be used, but in terms of high productivity, a wet coating method is preferred.

濕潤被覆法之例子可舉出:浸漬塗佈、旋轉塗佈、流動塗怖、噴霧塗佈、輥塗佈、凹版塗佈及類似的方法。 Examples of the wet coating method include dip coating, spin coating, flow coating, spray coating, roll coating, gravure coating, and the like.

乾燥被覆法之例子可舉出:真空蒸鍍、濺鍍、CVD(化學氣相沉積,Chemical Vapor Deposition)及類似方法。真空蒸鍍法之具體例子可舉出電阻加熱、電子射線、高頻加熱、離子射線及類似方法。CVD法之具體例子可舉出電漿-CVD、光學CVD、熱CVD及類似方法。 Examples of the dry coating method include vacuum evaporation, sputtering, CVD (Chemical Vapor Deposition), and the like. Specific examples of the vacuum vapor deposition method include resistance heating, electron beam, high frequency heating, ion beam, and the like. Specific examples of the CVD method include plasma-CVD, optical CVD, thermal CVD, and the like.

再者,也可藉由常壓電漿法被覆。 Furthermore, it can also be covered by a normal piezoelectric slurry method.

使用濕潤被覆法時,矽烷化合物(可為單獨、或含有該化合物之組成物之形態)係先以溶媒稀釋後適用於基材表面。從矽烷化合物或組成物之安定性及溶媒揮發性之觀點來看。較佳為使用下述溶媒:碳數5至12之全氟脂肪族烴(例如全氟己烷、全氟甲基環己烷及全氟-1,3-二甲基環己烷);聚氟芳香族烴(例如雙(三氟甲基)苯);聚氟脂肪族烴;氫氟醚(HFE)(例如全氟丙基甲基醚(C3F7OCH3)、全氟丁基甲基醚(C4F9OCH3)、全氟丁基乙基醚(C4F9OC2H5)、全氟己基甲基醚(C2F5CF(OCH3)C3F7)等烷基全氟烷基醚(全氟烷基及烷基可為直鏈或分枝狀))等。該等溶媒可單獨使用,或作為2種以上之混合物而使用。其中,較佳為氫氟醚,特佳為全氟丁基甲基醚(C4F9OCH3)及/或全氟丁基乙基醚(C4F9OC2H5)。 When the wet coating method is used, the decane compound (which may be used alone or in the form of a composition containing the compound) is first diluted with a solvent and applied to the surface of the substrate. From the standpoint of the stability of the decane compound or composition and the volatility of the solvent. Preferably, the following solvent is used: a perfluoroaliphatic hydrocarbon having 5 to 12 carbon atoms (for example, perfluorohexane, perfluoromethylcyclohexane, and perfluoro-1,3-dimethylcyclohexane); Fluorinated aromatic hydrocarbons (eg bis(trifluoromethyl)benzene); polyfluoroaliphatic hydrocarbons; hydrofluoroethers (HFE) (eg perfluoropropyl methyl ether (C 3 F 7 OCH 3 ), perfluorobutyl methyl) Ether (C 4 F 9 OCH 3 ), perfluorobutyl ethyl ether (C 4 F 9 OC 2 H 5 ), perfluorohexyl methyl ether (C 2 F 5 CF(OCH 3 )C 3 F 7 ), etc. The alkyl perfluoroalkyl ether (perfluoroalkyl group and alkyl group may be linear or branched) and the like. These solvents may be used singly or as a mixture of two or more kinds. Among them, preferred are hydrofluoroethers, particularly preferably perfluorobutyl methyl ether (C 4 F 9 OCH 3 ) and/or perfluorobutyl ethyl ether (C 4 F 9 OC 2 H 5 ).

前軀物膜之形成,可以在前軀物膜中矽烷化合物與用以水解及脫水縮合之催化劑一同存在之方式實施。簡便而言,在濕潤被覆法時,可將矽烷化合物(可為單獨、或含有該化合物之組成物之形態)以溶媒稀釋後,在適用於基材表面之前,於矽烷化合物之稀釋液添加催化劑。在乾燥被覆法時,添加有催化劑之矽烷化合物可直接真空蒸鍍處理,或者可使用在鐵或銅等金屬多孔體含浸添加有催化劑之矽烷化合物所成的錠粒狀物質,而進行真空蒸鍍處理。 The formation of the precursor film can be carried out in such a manner that the decane compound is present together with the catalyst for hydrolysis and dehydration condensation in the precursor film. Conveniently, in the wet coating method, a decane compound (which may be in the form of a composition alone or in a form containing the compound) may be diluted with a solvent, and a catalyst may be added to the diluent of the decane compound before being applied to the surface of the substrate. . In the dry coating method, the catalyst-added decane compound may be directly subjected to vacuum evaporation treatment, or may be vacuum-deposited by impregnating a porous metal body such as iron or copper with a catalyst-added decane compound. deal with.

催化劑可使用任意適當之酸或鹼。酸催化劑例如可使用乙酸,甲酸,三氟乙酸等。又,鹼催化劑例如可使用氨、有機胺類等。 Any suitable acid or base can be used as the catalyst. As the acid catalyst, for example, acetic acid, formic acid, trifluoroacetic acid or the like can be used. Further, as the base catalyst, for example, ammonia, an organic amine or the like can be used.

以上述方式將前軀物膜形成於基材表面後,在形成有該前軀物膜之基材照射微波。 After the precursor film is formed on the surface of the substrate in the above manner, the substrate on which the precursor film is formed is irradiated with microwaves.

本發明照射之微波的頻率並無特別限定,較佳為300MHz至300GHz,例如可使用ITU(International Telecommunication Union)所規定之中心頻率為433.92MHz、915MHz、2.45GHz、5.8GHz、24.125GHz、61.25GHz、122.5GHz或245GHz之微波,代表性者可使用中心頻率2.45GHz之微波。藉由使用該頻率,可有效率地加熱形成前軀物膜之基材、及作用於可水解的基之水分子,而促進矽烷系膜之形成。 The frequency of the microwave to be irradiated by the present invention is not particularly limited, but is preferably 300 MHz to 300 GHz. For example, the center frequency specified by the ITU (International Telecommunication Union) is 433.92 MHz, 915 MHz, 2.45 GHz, 5.8 GHz, 24.125 GHz, and 61.25 GHz. For microwaves of 122.5 GHz or 245 GHz, a representative microwave can be used with a center frequency of 2.45 GHz. By using this frequency, the base material forming the precursor film and the water molecules acting on the hydrolyzable group can be efficiently heated to promote the formation of the decane film.

本發明照射之微波的輸出並無特別限定,較佳為100W至20kW,更佳為5至15kW,特佳為10kW。藉由使輸出為100W以上,而有效率地加熱前軀物膜,並促進矽烷系膜之形成。又,藉由使輸出為20kW以下,可抑制對基材之傷害。 The output of the microwave irradiated by the present invention is not particularly limited, but is preferably 100 W to 20 kW, more preferably 5 to 15 kW, and particularly preferably 10 kW. By making the output 100 W or more, the precursor film is efficiently heated and the formation of a decane film is promoted. Moreover, by making the output 20 kW or less, damage to the substrate can be suppressed.

本發明照射微波之照射時間係可因應微波輸出、前軀物膜成分、有無水分(如後述)等而改變,一般而言為0.1至10分鐘,較佳為1至3分鐘。本發明之方法係可在如此短時間形成矽烷系膜,故工業上為有利的。 The irradiation time of the irradiated microwave of the present invention may be changed depending on the microwave output, the composition of the precursor film, the presence or absence of moisture (as will be described later), and the like, and is generally 0.1 to 10 minutes, preferably 1 to 3 minutes. The method of the present invention is industrially advantageous in that a decane-based film can be formed in such a short period of time.

又,於前軀物膜照射微波前或者在照射中,亦可對前軀物膜供給水分。藉由對前軀物膜供給水分,會促進前軀物膜之可水解的基之水解,而可得到具有高磨擦耐久性之矽烷系膜。 Further, before the precursor film is irradiated with microwaves or during irradiation, water may be supplied to the precursor film. By supplying water to the precursor film, hydrolysis of the hydrolyzable group of the precursor film is promoted, and a decane film having high friction durability can be obtained.

對前軀物膜供給水分之方法並無特別限定,例如可舉出:水分之噴霧,吹以水蒸氣(Steam)、過熱水蒸氣等方法。 The method of supplying moisture to the precursor film is not particularly limited, and examples thereof include a spray of water and a method of blowing steam or superheated steam.

又,系統內係維持在例如80℃至250℃,較佳為80℃至180℃,更佳為100℃至150℃,藉此可防止於基材及所形成之 矽烷系膜附著水滴,藉此可省略矽烷系膜形成後之乾燥步驟。 Further, the system is maintained at, for example, 80 ° C to 250 ° C, preferably 80 ° C to 180 ° C, more preferably 100 ° C to 150 ° C, thereby preventing the substrate and the formed The decane-based film is attached with water droplets, whereby the drying step after the formation of the decane-based film can be omitted.

藉由以上方式,可在基材表面形成源自前軀物膜之 矽烷系膜。藉此所得之矽烷系膜具有高磨擦耐久性。又,該矽烷系膜除了高磨擦耐久性以外,根據所使用之矽烷系化合物,也可獲得疏水性、疏油性、抗污性(例如防止指紋等髒污附著)、表面平滑性(或潤滑性,例如指紋等髒污之拭除性)等,而適合利用作為功能性薄膜。 By the above manner, a precursor film can be formed on the surface of the substrate. A decane film. The decane-based film thus obtained has high friction durability. Further, in addition to high friction durability, the decane-based film can also obtain hydrophobicity, oleophobicity, stain resistance (for example, prevention of adhesion such as fingerprints) and surface smoothness (or lubricity) depending on the decane-based compound to be used. For example, such as fingerprints and the like, it is suitable for use as a functional film.

本發明不受任何理論拘束,但認為藉由本發明方法 而提昇矽烷系膜之磨擦耐久性的理由係如下述。在矽烷系膜之形成中,可藉由對前軀物膜加熱而促進膜形成。但是,一般以乾燥空氣為媒質之加熱中,熱傳導之效率不佳、或容易產生溫度不均。 另一方面,本發明之方法中,係藉由照射微波而直接且均勻地同時加熱形成有前軀物膜之基材,故係非常有效率地進行膜形成反應。又,藉由對前軀物膜供給水分,而使水作用於前軀物膜之鍵結於Si且可水解的基,並迅速地發生水解。接著,係以微波加熱對形成有前軀物膜之基材,故會迅速地發生矽烷化合物彼此之脫水縮合、以及矽烷化合物與基材表面所存在之反應性基(例如羥基等)之間的反應(例如脫水縮合)。該結果會增加矽烷系膜本身之膜強度、以及矽烷系膜與基材表面之間之附著強度,因此認為可得到具有高磨擦耐久性之矽烷系膜。 The invention is not limited by any theory, but is believed to be by the method of the invention The reason for improving the friction durability of the decane-based film is as follows. In the formation of a decane film, film formation can be promoted by heating the precursor film. However, in general heating with dry air as a medium, heat transfer efficiency is not good, or temperature unevenness is likely to occur. On the other hand, in the method of the present invention, the substrate on which the precursor film is formed is directly and uniformly heated by irradiating the microwave, so that the film formation reaction is carried out very efficiently. Further, by supplying water to the precursor film, water acts on the Si and hydrolyzable groups of the precursor film, and hydrolysis rapidly occurs. Then, the substrate on which the precursor film is formed is heated by microwaves, so that dehydration condensation of the decane compounds and the reactive groups (for example, hydroxyl groups) existing on the surface of the substrate are rapidly formed. Reaction (eg dehydration condensation). As a result, the film strength of the decane-based film itself and the adhesion strength between the decane-based film and the surface of the substrate are increased. Therefore, it is considered that a decane-based film having high friction durability can be obtained.

藉此,所得之具有矽烷系膜之物品並無特別限定, 但可為光學構件。光學構件之例子可舉例如下:眼鏡等之透鏡;PDP、LCD等顯示器之前面保護板、抗反射板、偏光板、防眩板;行動電話、個人數位助理(PDA)等機器之觸控面板薄片;藍光 (Blu-ray)(註冊商標)光碟、DVD光碟、CD-R、MO等光碟的光碟面;光纖等。 Therefore, the obtained article having a decane-based film is not particularly limited. But it can be an optical member. Examples of the optical member can be exemplified by lenses such as glasses, PDP, LCD, etc., front protection plates, anti-reflection plates, polarizing plates, anti-glare plates, and touch panel sheets of mobile phones, personal digital assistants (PDAs), and the like. Blue light (Blu-ray) (registered trademark) Optical disc, DVD, CD-R, MO, etc.

矽烷系膜之厚度並無特別限定。為光學構件時,就光學性能、磨擦耐久性及抗污性之點而言,矽烷系膜之厚度為1至30nm,較佳為1至15nm之範圍。 The thickness of the decane-based film is not particularly limited. In the case of an optical member, the thickness of the decane-based film is from 1 to 30 nm, preferably from 1 to 15 nm, in terms of optical properties, friction durability, and stain resistance.

以上說明藉由本發明的製造方法所得之具有矽烷系膜之物品,但本發明並不限定於上述所例示者。 The article having a decane-based film obtained by the production method of the present invention has been described above, but the present invention is not limited to the above-exemplified ones.

(實施例) (Example)

以下,藉由實施例進一步具體說明本發明之物品的製造方法,但本發明並不限定於該等實施例。 Hereinafter, the method for producing the article of the present invention will be further specifically described by way of examples, but the present invention is not limited to the examples.

(實施例1) (Example 1) .膜形成用組成物之調製 . Modulation of film forming composition

將以下式所示化合物(分子量約4000)為主成分之組成物0.1重量份、氫氟醚(3M公司製,Novec HFE7200(全氟丁基醚))99.9重量份混合,而調製膜形成用組成物。 0.1 parts by weight of a compound represented by the following formula (molecular weight: about 4,000) as a main component, and 90 parts by weight of hydrofluoroether (Novec HFE 7200 (perfluorobutyl ether) manufactured by 3M Company) were mixed to prepare a composition for forming a film. Things.

(式中,n之平均值為20,m之平均值為3)。 (wherein, the average value of n is 20, and the average value of m is 3).

.基材及前處理 . Substrate and pretreatment

基材係使用化學強化玻璃(康寧公司製,「GORILLA」玻璃,厚度0.55mm,平面尺寸55mm×100mm)。將基材(化學強化玻璃)使用大氣壓電漿產生裝置(Enercon公司之電漿處理裝置「Dyne-A-Mite IT」),將基材表面藉由電漿處理洗淨及活性化。 As the substrate, chemically strengthened glass ("GORILLA" glass, thickness: 0.55 mm, plane size: 55 mm × 100 mm) manufactured by Corning Corporation was used. The base material (chemically strengthened glass) was cleaned and activated by plasma treatment using an atmospheric piezoelectric slurry generator (Dyne-A-Mite IT, a plasma processing apparatus manufactured by Enercon Co., Ltd.).

.前軀物膜之形成 . Formation of precursor film

使用搭載2流體噴嘴之噴霧塗怖裝置(東邦化成公司製),將上述調製之膜形成用組成物均勻地噴霧塗怖於基材表面。膜形成用組成物之塗怖量,對於基材1片為0.2ml(塗怖液流量3.0ml/分鐘)。藉此在基材表面形成前軀物膜。 The film formation composition prepared above was uniformly sprayed onto the surface of the substrate by using a spray coating device (manufactured by Toho Chemical Co., Ltd.) equipped with a two-fluid nozzle. The amount of coating for the film-forming composition was 0.2 ml for one substrate (coating liquid flow rate: 3.0 ml/min). Thereby, a precursor film is formed on the surface of the substrate.

.後處理 . Post processing

接著,將形成上述前軀物膜之基材設置於微波產生裝置(Micro Denshi公司製)。接著,照射頻率2.45GHz、輸出10Kw之微波1分鐘,之後將基材由裝置取出。以如此方式,在基材表面形成源自前軀物膜之含氟矽烷系膜。 Next, the substrate on which the precursor film was formed was placed in a microwave generator (manufactured by Micro Denshi Co., Ltd.). Next, the microwave was irradiated at a frequency of 2.45 GHz and output at 10 Kw for 1 minute, after which the substrate was taken out by the apparatus. In this manner, a fluorine-containing decane-based film derived from the precursor film is formed on the surface of the substrate.

(實施例2) (Example 2)

除了在後處理時係一邊導入水蒸氣(流量40公升/小時)及熱風(120℃)、一邊照射微波以外,係以與實施例1相同方式而在基材表面形成源自前軀物膜之含氟矽烷系膜。 In the same manner as in Example 1, except that water vapor (flow rate: 40 liters/hour) and hot air (120 ° C) were introduced during the post-treatment, a precursor film was formed on the surface of the substrate in the same manner as in Example 1. A fluorine-containing decane-based film.

(實施例3) (Example 3)

除了使用下式所示化合物作為調製膜形成用組成物所使用之含氟矽烷化合物以外,以與實施例1相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。但n之平均值為20。 A fluorine-containing decane-based film derived from a precursor film was formed on the surface of the substrate in the same manner as in Example 1 except that the compound represented by the following formula was used as the fluorine-containing decane compound used for the composition for forming a film. But the average value of n is 20.

CF3CF2CF2O(CF2CF2CF2O)nCF2CF2CH2OCH2CH2CH2Si[CH2CH2CH2Si(OCH3)3]3 CF 3 CF 2 CF 2 O(CF 2 CF 2 CF 2 O) n CF 2 CF 2 CH 2 OCH 2 CH 2 CH 2 Si[CH 2 CH 2 CH 2 Si(OCH 3 ) 3 ] 3

(實施例4) (Example 4)

除了後處理時係一邊導入水蒸氣(流量40公升/小時)及熱風(120℃)一邊照射微波以外,以與實施例3相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。 In the same manner as in Example 3, a fluorine-derived film derived from the precursor film was formed on the surface of the substrate, except that the microwave was irradiated while introducing steam (flow rate: 40 liter/hour) and hot air (120 ° C). A decane film.

(實施例5) (Example 5)

除了使用下式所示化合物作為調製膜形成用組成物所使用之含氟矽烷化合物以外,以與實施例1相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。但n之平均值為15,m之平均值為16。 A fluorine-containing decane-based film derived from a precursor film was formed on the surface of the substrate in the same manner as in Example 1 except that the compound represented by the following formula was used as the fluorine-containing decane compound used for the composition for forming a film. However, the average value of n is 15, and the average value of m is 16.

CF3O(CF2CF2O)n(CF2O)mCF2CH2OCH2CH2CH2Si[CH2CH2CH2Si(OCH3)3]3 CF 3 O(CF 2 CF 2 O) n (CF 2 O) m CF 2 CH 2 OCH 2 CH 2 CH 2 Si[CH 2 CH 2 CH 2 Si(OCH 3 ) 3 ] 3

(實施例6) (Example 6)

除了後處理時係一邊導入水蒸氣(流量40公升/小時)及熱風(120℃)一邊照射微波以外,以與實施例5相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。 In the same manner as in Example 5, a fluorine-derived film derived from the precursor film was formed on the surface of the substrate, except that the microwave was irradiated with water vapor (flow rate: 40 liter/hour) and hot air (120 ° C). A decane film.

(比較例1) (Comparative Example 1)

除了後處理係用傳統方式之通常乾燥,亦即,將形成有前軀物膜之基材在電爐中以120℃加熱1小時以外,以與實施例1相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。 The source was formed on the surface of the substrate in the same manner as in Example 1 except that the post-treatment was usually dried in a conventional manner, that is, the substrate on which the precursor film was formed was heated at 120 ° C for 1 hour in an electric furnace. A fluorine-containing decane film derived from a precursor film.

(比較例2) (Comparative Example 2)

除了後處理係用傳統方式之通常乾燥,亦即,將形成有前軀物膜之基材在電爐中以120℃加熱1小時以外,以與實施例3相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。 The source was formed on the surface of the substrate in the same manner as in Example 3 except that the post-treatment was usually dried in a conventional manner, that is, the substrate on which the precursor film was formed was heated at 120 ° C for 1 hour in an electric furnace. A fluorine-containing decane film derived from a precursor film.

(比較例3) (Comparative Example 3)

除了後處理係用傳統方式之通常乾燥,亦即,將形成前軀物膜之基材在電爐中以120℃加熱1小時以外,以與實施例5相同方式,而在基材表面形成源自前軀物膜之含氟矽烷系膜。 The formation of the substrate surface was carried out in the same manner as in Example 5 except that the post-treatment was usually dried in a conventional manner, that is, the substrate on which the precursor film was formed was heated at 120 ° C for 1 hour in an electric furnace. A fluorine-containing decane film of the precursor film.

實施例及比較例之後處理條件係統整於下述表1。 The processing conditions after the examples and comparative examples were summarized in Table 1 below.

(評估) (assessment)

對以上實施例及比較例之在基材表面形成之含氟矽烷系膜,測定水之靜接觸角。水之靜接觸角係使用接觸角測定裝置(協和界面科學公司製),並以水1μL實施。 The static contact angle of water was measured for the fluorine-containing decane-based film formed on the surface of the substrate in the above Examples and Comparative Examples. The static contact angle of water was carried out using a contact angle measuring device (manufactured by Kyowa Interface Science Co., Ltd.) and using 1 μL of water.

首先,作為初期評估,係在含氟矽烷系膜形成後,於膜表面還未有任何接觸之狀態下測定水之靜接觸角(磨擦次數零次)。 First, as an initial evaluation, after the formation of the fluorine-containing decane-based film, the static contact angle of water (the number of times of rubbing) was measured without any contact on the surface of the film.

之後,實施鋼絲絨磨擦耐久性評估以評估磨擦耐久性。具體而言,係將形成有含氟矽烷系膜之基材水平配置,使鋼絲絨(支數(count)# 0000,尺寸10mm×10mm×5mm)接觸含氟矽烷系膜露出之上表面,並於其上施加1000gf之荷重,之後,在施加荷重之狀態下將鋼絲絨以140mm/秒的速度來回移動。在來回次數每2000次時測定水之靜接觸角(度)。在接觸角的測定值未滿100度時停止評估。結果示於表2。又,使用相同之含氟矽烷化合物之實施例1、2及比較例1的結果係表示於第1圖,實施例3、4及比較例2之結果係表示於第2圖,實施例5、6及比較例3之結果係表示於第3圖。 Thereafter, a steel wool friction durability evaluation was performed to evaluate the friction durability. Specifically, the substrate on which the fluorine-containing decane-based film is formed is horizontally disposed, and the steel wool (count # 0000, size 10 mm × 10 mm × 5 mm) is brought into contact with the fluorine-containing decane-based film to expose the upper surface, and A load of 1000 gf was applied thereto, and then the steel wool was moved back and forth at a speed of 140 mm/sec under application of a load. The static contact angle (degrees) of water was measured every 2000 times. The evaluation is stopped when the measured value of the contact angle is less than 100 degrees. The results are shown in Table 2. Further, the results of Examples 1 and 2 and Comparative Example 1 using the same fluorine-containing decane compound are shown in Fig. 1, and the results of Examples 3 and 4 and Comparative Example 2 are shown in Fig. 2, and Example 5, The results of 6 and Comparative Example 3 are shown in Fig. 3.

從表2及第1圖至第3圖可知,與藉由150℃乾燥空氣之通常乾燥而進行後處理之情形相比,確認到藉由使用微波進行後處理可大幅提昇含氟矽烷系膜之磨擦耐久性。 As can be seen from Table 2 and Figs. 1 to 3, it was confirmed that the post-treatment by using microwaves can greatly enhance the fluorine-containing decane-based film as compared with the case of post-treatment by drying in a dry air at 150 °C. Friction durability.

此認為是相對於通常乾燥以乾燥空氣為媒質而加熱基材,微波係直接加熱基材本身,故可有效率地進行反應。 It is considered that the substrate is heated by drying with dry air as a medium, and the microwave itself directly heats the substrate itself, so that the reaction can be efficiently carried out.

又,與不使用水蒸氣之實施例1、3及5相比,組合微波與水蒸氣之實施例2、4及6係更為提昇含氟矽烷系膜之磨擦耐久性。 Further, in Examples 2, 4 and 6 in which microwaves and water vapor were combined, the friction durability of the fluorine-containing decane-based film was further improved as compared with Examples 1, 3 and 5 in which no water vapor was used.

此認為是藉由使用水蒸氣而使水作用於前軀物膜之可水解的基,並迅速地進行水解,而形成堅固之含氟矽烷系膜。 This is considered to be that the water is allowed to act on the hydrolyzable group of the precursor film by using water vapor, and the hydrolysis is rapidly carried out to form a solid fluorine-containing decane-based film.

(產業上之可利用性) (industrial availability)

本發明係適合利用於將矽烷系膜形成在各式各樣基材的表面,尤其是在要求穿透性之光學構件的表面。 The present invention is suitable for use in forming a decane-based film on the surface of a wide variety of substrates, particularly on the surface of optical members requiring penetration.

本案圖示皆為表示本案實施例及比較例的磨擦耐久性數據之圖表,不足以代表本案技術特徵,故本案無指定代表圖。 The illustrations in this case are graphs showing the friction durability data of the examples and comparative examples of the present case, which are not sufficient to represent the technical features of the present case, so there is no representative representative figure in this case.

Claims (22)

一種包含基材及被覆在該基材表面之矽烷系膜的物品的製造方法,其包括:(a)在基材表面形成含有矽烷化合物之前軀物膜,該矽烷化合物具有鍵結於Si且可水解的基;(b)於形成有該前軀物膜之基材照射微波,並在該基材表面形成源自該前軀物膜之矽烷系膜。 A method for producing an article comprising a substrate and a decane-based film coated on the surface of the substrate, comprising: (a) forming a body film before the formation of a decane compound on the surface of the substrate, the decane compound having a bond to Si and a substrate to be hydrolyzed; (b) a substrate on which the precursor film is formed is irradiated with microwaves, and a decane film derived from the precursor film is formed on the surface of the substrate. 如申請專利範圍第1項所述之製造方法,其中,前述(b)中係包括在照射微波的同時對前軀物膜供給水分。 The manufacturing method according to claim 1, wherein the (b) includes supplying moisture to the front film while irradiating the microwave. 如申請專利範圍第1項所述之製造方法,其中,水分係以水蒸氣之方式供給。 The manufacturing method according to claim 1, wherein the water is supplied as water vapor. 如申請專利範圍第1項至第3項中任一項所述之製造方法,其中,微波之頻率係選自300MHz至300GHz之頻帶。 The manufacturing method according to any one of claims 1 to 3, wherein the frequency of the microwave is selected from the group consisting of 300 MHz to 300 GHz. 如申請專利範圍第1項至第4項中任一項所述之製造方法,其中,微波輸出為100W至20kW。 The manufacturing method according to any one of claims 1 to 4, wherein the microwave output is 100 W to 20 kW. 如申請專利範圍第1項至第5項中任一項所述之製造方法,其中,矽烷化合物為含氟矽烷化合物。 The production method according to any one of claims 1 to 5, wherein the decane compound is a fluorine-containing decane compound. 如申請專利範圍第1項至第6項中任一項所述之製造方法,其中,矽烷化合物進一步具有全氟聚醚基。 The production method according to any one of claims 1 to 6, wherein the decane compound further has a perfluoropolyether group. 如申請專利範圍第6項或第7項所述之製造方法,其中,含氟矽烷化合物含有至少一種以下述通式(1a)及(1b)之任一者所示之化合物, 該等式中,Rf1表示可經1個或1個以上之氟原子取代之碳數1至16之烷基,a、b、c及s分別獨立地表示0以上、200以下之整數,a、b、c及s的和至少為1,附以a、b、c或s並以括弧括起之各重複單元的存在順序在式中為任意順序,d及f為0或1,e及g為0以上、2以下之整數,m及l為1以上、10以下之整數,X表示氫原子或鹵原子,Y表示氫原子或低級烷基,Z表示氟原子或低級氟烷基,T表示羥基或可水解的基,R1表示氫原子或碳數1至22之烷基,n為1以上3以下之整數。 The production method according to claim 6 or 7, wherein the fluorine-containing decane compound contains at least one compound represented by any one of the following formulas (1a) and (1b). In the formula, Rf 1 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, and a, b, c and s each independently represent an integer of 0 or more and 200 or less, a. The sum of b, c and s is at least 1, and the order of existence of each repeating unit enclosed by a, b, c or s and enclosed in parentheses is in any order in the formula, d and f are 0 or 1, e and g is an integer of 0 or more and 2 or less, m and l are integers of 1 or more and 10 or less, X represents a hydrogen atom or a halogen atom, Y represents a hydrogen atom or a lower alkyl group, and Z represents a fluorine atom or a lower fluoroalkyl group, T A hydroxyl group or a hydrolyzable group, R 1 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, and n is an integer of 1 or more and 3 or less. 如申請專利範圍第8項所述之製造方法,其中,Rf1為碳數1至16之全氟烷基。 The production method according to claim 8, wherein Rf 1 is a perfluoroalkyl group having 1 to 16 carbon atoms. 如申請專利範圍第6項或第7項所述之製造方法,其中,含氟矽烷化合物含有至少一種以下述通式(2a)及(2b)之任一者所示之化合物, Rf 2 -PFPE-X-(SiT n R 2 3-n ) α ‧‧‧(2a) (R 2 3-n T n Si) α -X-PFPE-X-(SiT n R 2 3-n ) α ‧‧‧(2b)該等式中,Rf2表示可經1個或1個以上之氟原子取代之碳數1至16之烷基,PFPE表示-(OC4F8)s-(OC3F6)b-(OC2F4)c-(OCF2)d-,a、b、c及s分別獨立地表示0以上、200以下之整數,a、b、c及s的和至少為1,附以a、b、c或s並以括弧括起之各重複單元的存在順序在式中為任意順序,X分別獨立地表示2至7價之有機基,T表示羥基或可水解的基,R2表示氫原子或碳數1至22之烷基,n為1以上、3以下之整數,α分別獨立並為1至6之整數。 The production method according to claim 6 or 7, wherein the fluorine-containing decane compound contains at least one compound represented by any one of the following formulas (2a) and (2b), Rf 2 -PFPE -X-(SiT n R 2 3-n ) α ‧‧‧(2a) (R 2 3-n T n Si) α -X-PFPE-X-(SiT n R 2 3-n ) α ‧‧‧ (2b) In the equation, Rf 2 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, and PFPE represents -(OC 4 F 8 ) s -(OC 3 F 6 ) b -(OC 2 F 4 ) c -(OCF 2 ) d -, a, b, c and s each independently represent an integer of 0 or more and 200 or less, and the sum of a, b, c and s is at least 1, attached The order of existence of each repeating unit in a, b, c or s and enclosed in parentheses is in any order in the formula, X independently represents a 2- to 7-valent organic group, and T represents a hydroxyl group or a hydrolyzable group, R 2 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, and n is an integer of 1 or more and 3 or less, and α is independently an integer of 1 to 6. 如申請專利範圍第10項所述之製造方法,其中,Rf2為碳數1至16之全氟烷基。 The production method according to claim 10, wherein Rf 2 is a perfluoroalkyl group having 1 to 16 carbon atoms. 如申請專利範圍第10項或第11項所述之製造方法,其中,X為2價之有機基且α為1。 The manufacturing method according to claim 10, wherein X is a divalent organic group and α is 1. 如申請專利範圍第6項或第7項所述之製造方法,其中,含氟矽烷化合物含有至少一種以下述通式(3)所示之化合物,Rf3[-L3 p-X-R31-Si(OR32)3]q‧‧‧(3)式中,Rf3表示全氟聚醚基;但鍵結於末端碳原子之氟原子之全部或一部分可為氫原子,p表示0或1,q表示1或2, R31表示伸烷基,R32表示烷基,L3表示-CO-,X表示由-O-、-NR33-、-S-、-SO2-、-SO2NR33-及-NR33CO-所成群組所選擇之基,R33表示氫原子或碳數3以下之烷基。 The production method according to claim 6 or 7, wherein the fluorine-containing decane compound contains at least one compound represented by the following formula (3), Rf 3 [-L 3 p -XR 31 -Si (OR 32 ) 3 ] q ‧‧‧(3), wherein Rf 3 represents a perfluoropolyether group; but all or a part of the fluorine atom bonded to the terminal carbon atom may be a hydrogen atom, and p represents 0 or 1, q represents 1 or 2, R 31 represents an alkylene group, R 32 represents an alkyl group, L 3 represents -CO-, and X represents -O-, -NR 33 -, -S-, -SO 2 -, -SO 2 NR 33 - and -NR 33 CO- are selected as a group selected, and R 33 represents a hydrogen atom or an alkyl group having 3 or less carbon atoms. 如申請專利範圍第6項或第7項所述之製造方法,其中,含氟矽烷化合物含有至少一種以下述通式(4)所示之化合物,(Rf4-L4)rSiTnR4 4-n-r‧‧‧(4)式中,Rf4表示碳數1至20之直鏈、分枝、環狀之含氟烷基、或是碳數6至14之含氟芳香族基,L4表示碳數10以下之2價連結基,T表示羥基或可水解的基,R4表示氫原子或碳數1至22之烷基,n及r為1以上3以下之整數,n及r的和為4以下。 The production method according to claim 6 or 7, wherein the fluorine-containing decane compound contains at least one compound represented by the following formula (4), (Rf 4 - L 4 ) r SiT n R 4 In the formula 4-nr ‧‧‧(4), Rf 4 represents a linear, branched or cyclic fluoroalkyl group having 1 to 20 carbon atoms or a fluorine-containing aromatic group having 6 to 14 carbon atoms, L 4 represents a divalent linking group having 10 or less carbon atoms, T represents a hydroxyl group or a hydrolyzable group, R 4 represents a hydrogen atom or an alkyl group having 1 to 22 carbon atoms, and n and r are integers of 1 or more and 3 or less, n and r. The sum is 4 or less. 如申請專利範圍第6項或第7項所述之製造方法,其中,含氟矽烷化合物含有至少一種以下述通式(5a)及(5b)中任一者所示之化合物,Rf 5 -PFPE-X-(SiQ k Y 3-k ) α ‧‧‧(5a) (Y 3-k Q k Si) α -X-PFPE-X-(SiQ k Y 3-k ) α ‧‧‧(5b)式中,Rf5表示可羥1個或1個以上之氟原子取代之碳數1至16之烷基,PFPE分別獨立地表示-(OC4F8)a-(OC3F6)b-(OC2F4)c-(OCF2)d-,在此,a、b、c及d係分別獨立並為0以上、200以下之整數, a、b、c及d的和至少為1,附以a、b、c或d並以括弧括起之各重複單元的存在順序在式中為任意順序,X分別獨立地表示2至7價之有機基,所出現之各個Y係分別獨立地表示氫原子、羥基、可水解的基、或烴基,所出現之各個Q係分別獨立地表示-Z-SiR13 pR14 3-p,所出現之各個Z係分別獨立地表示2價之有機基;所出現之各個R13係分別獨立地表示羥基或可水解的基,所出現之各個R14係分別獨立地表示碳數1至22之烷基、或Q’,Q’與Q同義,在各個Q及Q’中,p係分別獨立地為0至3之整數,p的總和為1以上,Q中,透過Z基直鏈狀地連結之Si最多為5個,k為1至3之整數,α分別獨立地為1至6之整數。 The production method according to claim 6 or 7, wherein the fluorine-containing decane compound contains at least one compound represented by any one of the following formulas (5a) and (5b), Rf 5 -PFPE -X-(SiQ k Y 3-k ) α ‧‧‧(5a) (Y 3-k Q k Si) α -X-PFPE-X-(SiQ k Y 3-k ) α ‧‧‧(5b) Wherein Rf 5 represents an alkyl group having 1 to 16 carbon atoms which may be substituted by one or more fluorine atoms, and PFPE independently represents -(OC 4 F 8 ) a -(OC 3 F 6 ) b - (OC 2 F 4 ) c -(OCF 2 ) d - Here, a, b, c, and d are each independently an integer of 0 or more and 200 or less, and the sum of a, b, c, and d is at least 1. The order of existence of each repeating unit enclosed by a, b, c or d and enclosed in parentheses is in any order in the formula, and X independently represents an organic group of 2 to 7 valence, and each Y line appearing is independent The ground represents a hydrogen atom, a hydroxyl group, a hydrolyzable group, or a hydrocarbon group, and each of the Q systems present independently represents -Z-SiR 13 p R 14 3-p , and each of the Z systems appearing independently represents a divalent an organic group; each occurrence of R 13 Department independently represents a hydroxyl group or a hydrolyzable group, are out Each of R 14 each independently represent a carbon-based alkyl group of 1 to 22, or the Q ', Q' is synonymous with Q, and Q in each of the Q ', p lines each independently an integer of 0 to 3, the P The sum is 1 or more. In Q, the number of Si which is linearly bonded through the Z-group is at most 5, k is an integer of 1 to 3, and α is independently an integer of 1 to 6, respectively. 如申請專利範圍第15項所述之製造方法,其中,Rf5為碳數1至16之全氟烷基。 The production method according to claim 15, wherein Rf 5 is a perfluoroalkyl group having 1 to 16 carbon atoms. 如申請專利範圍第15項或第16項所述之製造方法,其中,X為2價之有機基且α為1。 The production method according to Item 15 or Item 16, wherein X is a divalent organic group and α is 1. 一種物品,係藉由申請專利範圍第1項至第17項中任一項所述之製造方法所得的物品。 An article obtained by the method of manufacturing according to any one of claims 1 to 17. 如申請專利範圍第18項所述之物品,其中,矽烷系膜係抗污性塗層。 The article of claim 18, wherein the decane-based film is an antifouling coating. 如申請專利範圍第18項或第19項所述之物品,其中,構成基材表面之材料具有羥基。 The article of claim 18, wherein the material constituting the surface of the substrate has a hydroxyl group. 如申請專利範圍第18項至第20項中任一項所述之物品,其中,構成基材表面之材料係由玻璃、樹脂、金屬、陶瓷所成群組所選擇者。 The article according to any one of claims 18 to 20, wherein the material constituting the surface of the substrate is selected from the group consisting of glass, resin, metal, and ceramic. 如申請專利範圍第18項至第21項中任一項所述之物品,其中,物品為光學構件。 The article of any one of claims 18 to 21, wherein the article is an optical member.
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