TW201445660A - Device and method for stripping a wafer from a carrier - Google Patents

Device and method for stripping a wafer from a carrier Download PDF

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TW201445660A
TW201445660A TW103128009A TW103128009A TW201445660A TW 201445660 A TW201445660 A TW 201445660A TW 103128009 A TW103128009 A TW 103128009A TW 103128009 A TW103128009 A TW 103128009A TW 201445660 A TW201445660 A TW 201445660A
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Taiwan
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carrier
wafer
wafer assembly
interconnect layer
stripping
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TW103128009A
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Chinese (zh)
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TWI540665B (en
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Erich Thallner
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Ev Group Gmbh
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Abstract

Device for stripping a wafer from a carrier that is connected to the wafer by an interconnect layer with: a receiving means for accommodating the carrier-wafer combination consisting of the carrier and the wafer, a connection release means for breaking the connection provided by the interconnect layer between the carrier and the wafer, and stripping means for stripping the wafer from the carrier, or for stripping the carrier from the wafer, the connection release means being made to work in a temperature range from 0 to 350 DEG C, especially from 10 to 200 DEG C, preferably from 20 to 80 DEG C, and more preferably at ambient temperature. Furthermore, the invention relates to a method for stripping a wafer from a carrier that is connected to the wafer by an interconnect layer with the following steps: accommodating the carrier-wafer combination consisting of the carrier and the wafer on a receiving means, breaking the connection provided by the interconnect layer between the carrier and the wafer by a connection release means, and stripping the wafer from the carrier, or for stripping the carrier from the wafer by stripping means, the connection release means working in a temperature range of up to 350 DEG C, especially from 10 to 200 DEG C, preferably from 20 to 80 DEG C, and more preferably at ambient temperature.

Description

用於將一晶圓自一載體剝除之裝置及方法 Apparatus and method for stripping a wafer from a carrier

本發明係關於一種根據技術方案1之用於將一晶圓自一載體剝除之裝置及一種根據技術方案14之用於將一晶圓自一載體剝除之方法。 The present invention relates to an apparatus for stripping a wafer from a carrier according to claim 1 and a method for stripping a wafer from a carrier according to claim 14.

晶圓之背面減薄在半導體工業中通常係有必要的,且可以機械及/或化學方式發生。出於背面減薄之目的,通常將晶圓暫時固定在一載體上,存在各種固定方法。舉例而言,可使用膜、玻璃基板或矽晶圓作為載體材料。 Thinning of the back side of the wafer is often necessary in the semiconductor industry and can occur mechanically and/or chemically. For the purpose of backside thinning, the wafer is usually temporarily fixed to a carrier, and various fixing methods exist. For example, a film, a glass substrate, or a germanium wafer can be used as the carrier material.

端視所使用之載體材料及載體與晶圓之間所使用之互連層,已知用於溶解或破壞該互連層之不同方法,例如(舉例而言),使用UV光、雷射光束、溫度作用或溶劑。 Depending on the carrier material used and the interconnect layer used between the carrier and the wafer, different methods are known for dissolving or destroying the interconnect layer, such as, for example, using UV light, a laser beam , temperature action or solvent.

剝除日益成為最重要的處理步驟中之一者,此乃因具有幾微米基板厚度之薄基板在剝除/剝離期間易破碎或易受到剝除過程所必需的力的損壞。 Stripping is one of the most important processing steps due to the fact that thin substrates having a substrate thickness of a few microns are susceptible to breakage during the stripping/stripping process or are susceptible to the forces necessary for the stripping process.

此外,薄基板幾乎不具有或根本不具有任何形狀穩定性且通常在沒有支撐材料之情形下捲曲。因此,在背面減薄晶圓之處置期間,對晶圓之固定及支撐實質上不可或缺。 In addition, thin substrates have little or no shape stability at all and are typically crimped without the support material. Therefore, the fixation and support of the wafer is substantially indispensable during the disposal of the backside thinned wafer.

DE 10 2006 032 488 B4闡述一種用於藉助雷射光加熱黏結物質之方法,該黏結物質之連接作用因相關聯之相當大的溫度升高(400℃至 500℃)而失效。因此,加熱整個晶圓堆疊(參見:[0021])之問題得到解決。然而,由於晶圓材料之良好導熱性,因此至少邊緣區域經受一相當大的溫度升高,且毗鄰該邊緣區域之區域亦經受一相當大的溫度升高。此處之問題亦係所得之溫度梯度。 DE 10 2006 032 488 B4 describes a method for heating a bonding substance by means of laser light, the bonding of which is associated with a considerable temperature increase (400 ° C to 500 ° C) and failed. Therefore, the problem of heating the entire wafer stack (see: [0021]) is solved. However, due to the good thermal conductivity of the wafer material, at least the edge region is subjected to a substantial temperature rise and the region adjacent to the edge region is also subjected to a substantial temperature increase. The problem here is also the resulting temperature gradient.

因此,本發明之目標係設計一種裝置及一種方法來盡可能無破壞性地將一晶圓自一載體拆除。 Accordingly, it is an object of the present invention to design an apparatus and a method for removing a wafer from a carrier as non-destructively as possible.

此目標係藉助技術方案1及14之特徵達成。在隨附申請專利範圍中給出本發明之有利進一步開發。本發明之框架亦涵蓋說明書、申請專利範圍及/或圖示中給出之特徵中之至少兩者之所有組合。在規定值範圍中,在指定限度內之值亦將作為邊界值且欲在任一組合中闡述該等值。 This goal was achieved by means of the features of technical solutions 1 and 14. Advantageous further developments of the invention are given in the scope of the accompanying claims. The framework of the present invention also covers all combinations of at least two of the specification, the scope of the patent application, and/or the features set forth in the drawings. In the range of specified values, values within specified limits will also be used as boundary values and are intended to be stated in any combination.

本發明係基於以下想法:設計一種能夠在小於350℃之一溫度下藉助其達成剝除之裝置。已發現,高於350℃之溫度範圍可對晶圓有害。此外,由於較高溫度需要更多能量,因此根據本發明之裝置需要較少能量來將晶圓自載體拆除。 The invention is based on the idea of designing a device by which stripping can be achieved at a temperature of less than 350 °C. Temperature ranges above 350 ° C have been found to be detrimental to wafers. Moreover, since higher temperatures require more energy, the device according to the present invention requires less energy to remove the wafer from the carrier.

因此,根據本發明之用於將一晶圓自由一互連層連接至該晶圓之一載體剝除之裝置可由以下特徵表徵:- 一接收構件,其用於容納由該載體及該晶圓構成之一載體晶圓組合,- 一連接釋放構件,其用於解開尤其係打破由該載體與該晶圓之間的該互連層提供之連接,及- 剝除構件,其用於將該晶圓自該載體剝除,或用於將該載體自該晶圓剝除,使該連接釋放構件在自0℃至350℃、尤其係自10℃至200℃、較佳係自20℃至80℃、且更佳係在環境溫度下之一溫度範圍中工作。 Therefore, the apparatus for attaching a free layer of a wafer to a carrier of the wafer according to the present invention can be characterized by: - a receiving member for accommodating the carrier and the wafer Forming a carrier wafer assembly, a connection release member for unwinding, in particular, breaking the connection provided by the interconnection layer between the carrier and the wafer, and a stripping member for Stripping the wafer from the carrier or for stripping the carrier from the wafer such that the connection releasing member is from 0 ° C to 350 ° C, especially from 10 ° C to 200 ° C, preferably from 20 ° C It works up to 80 ° C, and more preferably in a temperature range of ambient temperature.

此外,根據本發明,一種用於將一晶圓自由一互連層連接至該晶圓之一載體剝除之方法可具有以下步驟:- 將由該載體及該晶圓構成之一載體晶圓組合容納在一接收構件上,- 藉由一連接釋放構件解開尤其係打破由該載體與該晶圓之間的該互連層提供之連接,及- 藉由剝除構件將該晶圓自該載體剝除或將該載體自該晶圓剝除。 Moreover, in accordance with the present invention, a method for attaching a free layer of a wafer to a carrier strip of the wafer can have the following steps: - combining a carrier wafer composed of the carrier and the wafer Accommodating on a receiving member, - uncoupling by a connection releasing member, in particular breaking the connection provided by the interconnect layer between the carrier and the wafer, and - removing the wafer from the wafer by stripping the member The carrier is stripped or the carrier is stripped from the wafer.

該連接釋放構件在高達350℃、尤其係自10℃至200℃、較佳係自20℃至80℃、且更佳係在環境溫度下之一溫度範圍中工作。 The connection release member operates at a temperature range of up to 350 ° C, especially from 10 ° C to 200 ° C, preferably from 20 ° C to 80 ° C, and more preferably at ambient temperature.

將一晶圓界定為一產品基板(舉例而言,一半導體晶圓),傳統上將其減薄至在0.5μm與250μm之間的一厚度,但趨勢傾向於越來越薄之產品基板。 A wafer is defined as a product substrate (for example, a semiconductor wafer) that has conventionally been thinned to a thickness between 0.5 μm and 250 μm, but tends to be thinner and thinner product substrates.

舉例而言,該載體係具有在50μm與5,000μm之間的一厚度之一載體基板。 For example, the carrier has one of a thickness of between 50 μm and 5,000 μm.

該互連層可係一黏合劑(舉例而言,一可溶性黏合劑,特定而言係一熱塑性塑膠),舉例而言,可選擇性地將該黏合劑施加於該載體晶圓組合之一邊緣區域中,尤其係施加於自0.1mm至20mm之一邊緣區中。另一選擇係,可將該黏合劑施加於整個表面上方,且黏合力可藉由一黏合減小層(舉例而言,一含氟聚合物,較佳係特氟綸)在中心處減小。 The interconnect layer can be an adhesive (for example, a soluble adhesive, in particular a thermoplastic), for example, the adhesive can be selectively applied to one edge of the carrier wafer assembly. In the region, in particular, it is applied in an edge region from 0.1 mm to 20 mm. Alternatively, the adhesive can be applied over the entire surface and the adhesion can be reduced at the center by a bond reducing layer (for example, a fluoropolymer, preferably Teflon). .

該接收構件尤其適合係一卡盤,特定而言係用於尤其藉助負壓(舉例而言,抽吸路徑、孔或抽吸杯)容納該載體晶圓組合之一旋轉器卡盤。另一選擇係,舉例而言藉由橫向夾具之一機械容納係可能的。 The receiving member is particularly suitable for a chuck, in particular for accommodating one of the carrier wafer combinations, in particular by means of a vacuum (for example a suction path, a hole or a suction cup). Another option, for example by mechanical containment of one of the transverse clamps, is possible.

該剝除構件可係一上基板接收器,舉例而言,較佳係藉由施加負壓(例如,抽吸路徑、孔或抽吸杯)之一釋放卡盤。 The stripping member can be an upper substrate receiver, for example, preferably by releasing a chuck by applying a negative pressure (e.g., a suction path, a hole or a suction cup).

在本發明之一個有利實施例中,規定該連接釋放構件係製造成實質上在不加熱之情形下工作。以此方式,可省略任何加熱構件。 In an advantageous embodiment of the invention, the connection release member is specified to be manufactured to operate substantially without heating. In this way, any heating member can be omitted.

在本發明之另一有利實施例中,規定該連接釋放構件包括用於拆除該互連層之流體構件,特定而言係選擇性地溶解該互連層之一溶劑。互連層之化學溶解尤其對晶圓具有保護性,但藉助對應材料選擇,溶解亦可極快發生,尤其係當僅晶圓之邊緣區域具備一互連層時,使得溶劑可自側處極快發揮作用。以此方式,可省略載體基板及/或產品基板中之穿孔。 In a further advantageous embodiment of the invention, it is provided that the connection release member comprises a fluid member for removing the interconnect layer, in particular to selectively dissolve one of the interconnect layers. The chemical dissolution of the interconnect layer is particularly protective to the wafer, but with the choice of the corresponding material, the dissolution can occur very quickly, especially when only the edge region of the wafer has an interconnect layer, so that the solvent can be self-side. It works quickly. In this way, the perforations in the carrier substrate and/or the product substrate can be omitted.

在本發明之一個替代實施例中,規定該連接釋放構件包括用於拆除該互連層之機械分離構件,特定而言係用於穿透該互連層之一刀片。以此方式,可尤其迅速地將晶圓自載體分離。機械分離構件與流體構件之一組合亦係可能的。 In an alternative embodiment of the invention, the connection release member is provided to include a mechanical separation member for removing the interconnect layer, in particular for penetrating one of the interconnect layers. In this way, the wafer can be separated from the carrier particularly quickly. Combinations of mechanical separation members and one of the fluid members are also possible.

在本發明之另一替代實施例中,規定該連接釋放構件包括用於拆除該互連層之一UV光源。本實施例亦可與機械分離構件之實施例及/或具有流體構件之實施例組合在一起。 In another alternative embodiment of the invention, the connection release member is defined to include a UV light source for removing the interconnect layer. This embodiment can also be combined with embodiments of mechanical separation members and/or embodiments having fluid components.

在某種程度上,連接釋放構件係製造成特別地唯一自載體晶圓組合之一個側邊緣發揮作用,可省略自頂部及/或底部(尤其係位於側邊緣內晶圓之內側邊緣)對晶圓之作用。 To some extent, the connection release member is made to function particularly uniquely from one side edge of the carrier wafer combination, and may be omitted from the top and/or bottom (especially the inner edge of the wafer in the side edge). The role of the circle.

存在用於旋轉載體晶圓組合之一旋轉構件,此使得可省略連接釋放構件在載體晶圓組合之整個週邊上方之一配置,且部分作用於載體晶圓組合之週邊上足以。 There is one rotating member for rotating the carrier wafer assembly, which makes it possible to omit one of the configuration of the connection release member over the entire perimeter of the carrier wafer assembly and to act partially on the periphery of the carrier wafer assembly.

有利地,該連接釋放構件具有至少一個釋放裝置,其圍繞側邊緣,特定而言觸及接收構件及/或剝除構件,較佳形成一密封。由於該釋放裝置圍繞該載體晶圓組合之側邊緣,因此可尤其有效地作用於該互連層。此外,該釋放裝置用於保護晶圓,尤其用於保護側邊緣。此外,該圍繞措施可防止流體構件自釋放裝置顯露或防止UV光強度 損失。當使用機械分離構件時,防止可能的雜質自釋放裝置溢出且防止其污染晶圓。在一個有利組態中,該釋放裝置之剖面可製成U形。 Advantageously, the connection release member has at least one release means that preferably forms a seal around the side edges, in particular the receiving member and/or the stripping member. Since the release means surrounds the side edges of the carrier wafer assembly, it is particularly effective to act on the interconnect layer. In addition, the release device is used to protect the wafer, especially for protecting the side edges. In addition, the surrounding measure prevents the fluid component from revealing or preventing UV light intensity from the release device loss. When a mechanical separation member is used, possible impurities are prevented from overflowing from the release device and prevented from contaminating the wafer. In an advantageous configuration, the profile of the release device can be U-shaped.

在某種程度上,連接釋放構件(特定而言,釋放裝置)具有較佳地密封至附近之一工作室,仍可較佳地實施前述優勢(尤其係在使用流體構件時)。 To some extent, the attachment release member (specifically, the release device) has a preferred sealing to a nearby working chamber, and the aforementioned advantages are still better achieved (especially when fluid components are used).

在本發明之另一有利組態中,規定該工作室係製造成容納載體晶圓組合之側邊緣之一週邊扇段。 In another advantageous configuration of the invention, the working chamber is defined to accommodate a peripheral sector of one of the side edges of the carrier wafer assembly.

有利地,該工作室沿晶圓中心方向延伸僅稍微超過載體晶圓組合之側邊緣,特別地直至載體側上之接收方向[sic]且直至晶圓側上之剝除構件。 Advantageously, the working chamber extends only slightly beyond the side edge of the carrier wafer assembly, in particular up to the receiving direction [sic] on the carrier side and up to the stripping member on the wafer side.

有利地,該剝除構件經製成能夠旋轉,特定而言藉助旋轉接收構件驅動。 Advantageously, the stripping member is made rotatable, in particular by means of a rotary receiving member.

在某種程度上,該連接釋放構件具有用於清潔晶圓之清潔劑,在剝除晶圓之同時,至少可在曝露於互連層之區域中清潔後者。 To some extent, the connection release member has a cleaning agent for cleaning the wafer, and the latter can be cleaned at least while exposed to the interconnect layer while stripping the wafer.

根據本發明之方法在以下方面得到改良:將載體晶圓組合之一個側邊緣區域中之互連層製成黏性的,且在特別地由一含氟聚合物形成之較佳唯獨與該晶圓單獨接觸之一個內部區域中之互連層係製造成至少在該晶圓之方向中具有較小黏性至不具有黏性。 The method according to the invention is improved in that the interconnect layer in one of the side edge regions of the carrier wafer combination is made viscous and preferably formed from a fluoropolymer in particular The interconnect layer in an inner region of the wafer in which it is individually contacted is fabricated to have less viscous to non-viscosity in at least the direction of the wafer.

1‧‧‧載體 1‧‧‧ Carrier

2‧‧‧黏合減小層 2‧‧‧bonding reduction layer

3‧‧‧互連層 3‧‧‧Interconnect layer

4‧‧‧晶圓 4‧‧‧ Wafer

5‧‧‧驅動馬達 5‧‧‧Drive motor

5w‧‧‧驅動軸 5w‧‧‧ drive shaft

6‧‧‧接收構件 6‧‧‧ Receiving components

7‧‧‧處理室 7‧‧‧Processing room

8‧‧‧汲極 8‧‧‧汲polar

9‧‧‧晶圓接收器 9‧‧‧ Wafer Receiver

10‧‧‧壓力線 10‧‧‧ Pressure line

11‧‧‧晶圓接收器接收器 11‧‧‧ Wafer Receiver Receiver

12‧‧‧感測器 12‧‧‧ Sensors

13‧‧‧感測器 13‧‧‧ sensor

14‧‧‧抽吸杯 14‧‧‧ suction cup

15‧‧‧晶圓接收支撐件 15‧‧‧ Wafer receiving support

16‧‧‧釋放裝置 16‧‧‧ release device

17‧‧‧流體線 17‧‧‧ Fluid line

18‧‧‧致動器 18‧‧‧Actuator

19‧‧‧溶劑線 19‧‧‧Solvent line

20‧‧‧溶劑致動器 20‧‧‧Solvent Actuator

21‧‧‧載體晶圓組合 21‧‧‧ Carrier wafer combination

22‧‧‧內部區域 22‧‧‧Internal area

23‧‧‧側邊緣 23‧‧‧ Side edge

24‧‧‧底部 24‧‧‧ bottom

25‧‧‧支腿 25‧‧‧ legs

26‧‧‧支腿 26‧‧‧ legs

27‧‧‧側壁 27‧‧‧ side wall

28‧‧‧工作室 28‧‧‧Studio

29‧‧‧致動器臂 29‧‧‧Actuator arm

30‧‧‧晶圓接收器致動器臂 30‧‧‧ Wafer Receiver Actuator Arm

31‧‧‧溶劑致動器臂 31‧‧‧Solvent actuator arm

32‧‧‧箭頭 32‧‧‧ arrow

33‧‧‧旋轉箭頭 33‧‧‧Rotating arrows

34‧‧‧溶劑 34‧‧‧Solvent

35‧‧‧正面 35‧‧‧ positive

36‧‧‧正面 36‧‧‧ positive

37‧‧‧溶劑 37‧‧‧Solvent

38‧‧‧箔片 38‧‧‧Foil

39‧‧‧膜框 39‧‧‧ film frame

40‧‧‧溶劑線 40‧‧‧Solvent line

41‧‧‧輸出 41‧‧‧ Output

42‧‧‧膜框接收器 42‧‧‧Film frame receiver

43‧‧‧抽吸杯 43‧‧‧ suction cup

A‧‧‧接收平面 A‧‧‧ receiving plane

自以下對較佳實施例之說明且使用圖式將顯而易見本發明之其他優勢、特徵及細節。 Other advantages, features, and details of the invention will be apparent from the description of the preferred embodiments illustrated herein.

圖1顯示在根據本發明之一第一處理步驟中根據本發明之裝置之一示意圖;圖2顯示在根據本發明之一第二處理步驟中根據本發明之裝置之一示意圖;圖3a、圖3b、圖3c顯示在根據本發明之一第二處理步驟中根據本 發明之釋放裝置之一詳細示意圖;圖4顯示在根據本發明之一第三處理步驟中根據本發明之釋放裝置之一詳細示意圖;圖5顯示在根據本發明用於清潔一載體之一清潔步驟中根據本發明之裝置之一示意圖,且圖6顯示在一個替代實施例中根據本發明之裝置之一示意圖。 Figure 1 shows a schematic view of a device according to the invention in a first processing step according to the invention; Figure 2 shows a schematic view of a device according to the invention in a second processing step according to the invention; Figure 3a, Figure 3b, FIG. 3c shows according to the second processing step according to the present invention A detailed schematic view of one of the release devices of the invention; FIG. 4 shows a detailed schematic view of one of the release devices according to the invention in a third processing step according to the invention; FIG. 5 shows a cleaning step for cleaning a carrier according to the invention. A schematic diagram of one of the devices according to the invention, and Figure 6 shows a schematic representation of one of the devices according to the invention in an alternative embodiment.

在該等圖示中,相同組件及具有相同功能之組件係由相同參考編號識別。 In the illustrations, the same components and components having the same function are identified by the same reference numerals.

圖1在中心位置粗略地顯示一載體晶圓組合21,其由至少一個晶圓4及一載體1構成,且其固持在一接收構件6上,特定而言在一水平接收平面A中由該接收構件形成之一卡盤上。載體晶圓組合21轉動180°亦可置於接收構件6上,亦即,其中載體1向下且晶圓4向上。載體晶圓組合21係以未顯示之一機械臂方式供應。 1 shows, in a central position, a carrier wafer assembly 21 which is composed of at least one wafer 4 and a carrier 1 and which is held on a receiving member 6, in particular in a horizontal receiving plane A. The receiving member is formed on one of the chucks. The carrier wafer assembly 21 can also be placed 180° on the receiving member 6, i.e., where the carrier 1 is downward and the wafer 4 is upward. The carrier wafer assembly 21 is supplied in a manner that does not show one of the robot arms.

根據一個尤其有利之實施例,相對於水平方向顯示接收構件6或裝置以使得接收平面A不再顯示為水平的,而是相對於水平方向具有5°與90°之間、尤其係25°至90°、較佳係45°至90°、且更佳係恰好90°之一傾斜角。 According to a particularly advantageous embodiment, the receiving member 6 or the device is displayed with respect to the horizontal direction such that the receiving plane A is no longer displayed horizontally, but between 5° and 90° with respect to the horizontal direction, in particular 25° to 90°, preferably 45° to 90°, and more preferably one of the inclination angles of 90°.

此外,此處之載體晶圓組合21由一互連層3及整合至互連層3中之一黏合減小層2構成,且該層2係沿載體1之方向配置於載體晶圓組合21之一內部區域22中。在內部區域22外側,互連層3在載體晶圓組合21之一個側邊緣23上之黏合減小層2上面凸出。因此,側邊緣23係一環形區段,且其以自0.1mm至20mm之一寬度自載體晶圓組合21或載體1之外側輪廓延伸至載體晶圓組合21之中心。晶圓4通常具有300mm之一直徑。 In addition, the carrier wafer assembly 21 herein is composed of an interconnect layer 3 and one of the adhesion reduction layers 2 integrated into the interconnect layer 3, and the layer 2 is disposed in the carrier wafer assembly 21 along the direction of the carrier 1. One of the inner areas 22 is. Outside the inner region 22, the interconnect layer 3 projects over the adhesion reducing layer 2 on one of the side edges 23 of the carrier wafer assembly 21. Thus, the side edges 23 are an annular section and extend from the outer side profile of the carrier wafer assembly 21 or carrier 1 to the center of the carrier wafer assembly 21 in a width from 0.1 mm to 20 mm. Wafer 4 typically has a diameter of 300 mm.

晶圓4在被供應至根據本發明之裝置之前通常經受進一步處理步 驟,舉例而言,背面減薄至0.5μm至250μm之一厚度。 Wafer 4 is typically subjected to further processing steps before being supplied to the device according to the invention For example, the back side is thinned to a thickness of one of 0.5 μm to 250 μm.

載體晶圓組合21至少在側邊緣23周圍抬升至接收構件6以上。因此,接收構件6具有比載體晶圓組合21或晶圓4及/或載體1小之一直徑。 The carrier wafer assembly 21 is raised above the receiving member 6 at least around the side edges 23. Therefore, the receiving member 6 has a diameter smaller than that of the carrier wafer assembly 21 or the wafer 4 and/or the carrier 1.

以習用方式藉由負壓將載體晶圓組合21固定在接收構件6上,接收構件6能夠藉助一驅動馬達5及將接收構件6連接至驅動馬達5之一驅動軸5w旋轉。 The carrier wafer assembly 21 is fixed to the receiving member 6 by a vacuum in a conventional manner, and the receiving member 6 can be rotated by a driving motor 5 and a driving member 5 connected to the driving shaft 5w of the driving motor 5.

驅動馬達5及驅動軸5w可製成為具有真空供應之一中空軸以能夠有利地將該真空供應連接至旋轉接收構件6。 The drive motor 5 and the drive shaft 5w may be made to have a hollow shaft with a vacuum supply to be able to advantageously connect the vacuum supply to the rotary receiving member 6.

載體晶圓組合21裝納於一處理室7中,驅動馬達5位於處理室7外側且使驅動軸5w穿透位於處理室之底部24中之一開口。 The carrier wafer assembly 21 is housed in a processing chamber 7, the drive motor 5 being located outside of the processing chamber 7 and having the drive shaft 5w penetrating through one of the openings in the bottom 24 of the processing chamber.

此外,在底部24中存在一汲極8。 Furthermore, a drain 8 is present in the bottom 24 .

存在一釋放裝置16,其自載體晶圓組合21橫向地延伸超過載體晶圓組合21週邊扇段。釋放裝置16剖面製成U形,且該釋放裝置之支腿25、26及釋放裝置16之一個側壁27環繞一工作室28,該工作室朝向載體晶圓組合21開口。該釋放裝置在載體晶圓組合21之一圓環段上方延伸且支腿25、26在圖2中所示之一釋放位置中抬升至側邊緣23以上且此對應於根據本發明之方法之第二處理步驟。在某種程度上,接收平面A係傾斜的,釋放裝置可製成類似一浸漬槽;此大大地簡化了對裝置之處置。 There is a release device 16 that extends laterally from the carrier wafer assembly 21 beyond the peripheral segments of the carrier wafer assembly 21. The release device 16 is profiled in a U-shape and the legs 25, 26 of the release device and a side wall 27 of the release device 16 surround a working chamber 28 that opens toward the carrier wafer assembly 21. The release means extends over a ring segment of the carrier wafer assembly 21 and the legs 25, 26 are raised above the side edge 23 in one of the release positions shown in Figure 2 and this corresponds to the method according to the invention Two processing steps. To some extent, the receiving plane A is tilted and the release means can be made to resemble a dip tank; this greatly simplifies handling of the apparatus.

釋放裝置16可藉助一致動器18經由凸出至處理室7中之一L形致動器臂29自釋放位置移動至根據圖1之一初始位置中。 The release device 16 can be moved from the release position via one of the L-shaped actuator arms 29 projecting into the processing chamber 7 by means of the actuator 18 into an initial position according to FIG.

在載體晶圓組合21上方存在若干剝除構件,該等剝除構件用於將載體1自晶圓4剝除,該等剝除構件具有一晶圓接收器9,此處係一卡盤。 Above the carrier wafer assembly 21 there are a plurality of stripping members for stripping the carrier 1 from the wafer 4, the stripping members having a wafer receiver 9, here a chuck.

晶圓接收器9支撐於一晶圓接收器致動器臂30上,能夠在晶圓接 收器致動器臂30之一晶圓接收器支撐件15中旋轉,晶圓接收器支撐件15製成為一軸向及徑向軸承。晶圓接收器支撐件15及晶圓接收器9經配置使其旋轉軸與驅動軸5w或接收構件6之旋轉軸齊平。 The wafer receiver 9 is supported on a wafer receiver actuator arm 30 and can be connected to the wafer. The wafer receiver support 15 is rotated in one of the wafer receiver arms 15, and the wafer receiver support 15 is formed as an axial and radial bearing. The wafer receiver support 15 and the wafer receiver 9 are configured such that their axes of rotation are flush with the axis of rotation of the drive shaft 5w or the receiving member 6.

此外,剝除構件具有整合至晶圓接收器9中且此處製成波紋管樣之彈性抽吸杯14。抽吸杯14連接至一壓力線10,該壓力線又連接至一真空構件。因此,可將抽吸杯14之區域中之載體1抽吸至晶圓接收器9上。 Furthermore, the stripping member has an elastic suction cup 14 that is integrated into the wafer receiver 9 and is here formed into a bellows. The suction cup 14 is connected to a pressure line 10 which in turn is connected to a vacuum member. Therefore, the carrier 1 in the region of the suction cup 14 can be sucked onto the wafer receiver 9.

此外,如圖1中所示,根據本發明之裝置具有一溶劑線19,其經由一溶劑致動器臂31連接至一溶劑致動器20以用於在將載體自晶圓4剝除之後清潔晶圓4。 Furthermore, as shown in FIG. 1, the apparatus according to the present invention has a solvent line 19 connected to a solvent actuator 20 via a solvent actuator arm 31 for stripping the carrier from the wafer 4. Clean the wafer 4.

藉助意欲用於距離量測且整合至晶圓接收器9中之一感測器,可量測將載體1自晶圓4之剝除(尤其藉由一感測器線12)。 Stripping of the carrier 1 from the wafer 4 (especially by a sensor line 12) can be measured by means of a sensor intended for distance measurement and integrated into the wafer receiver 9.

在接收根據圖1之載體晶圓組合21之後,晶圓接收器9由晶圓接收器致動器11降低至載體1上,直至抽吸杯14擱置在載體1上為止。 After receiving the carrier wafer assembly 21 according to Fig. 1, the wafer receiver 9 is lowered by the wafer receiver actuator 11 onto the carrier 1 until the suction cup 14 rests on the carrier 1.

接著,經由壓力線10將一真空施加至抽吸杯14;此係由一箭頭32顯示。 Next, a vacuum is applied to the suction cup 14 via the pressure line 10; this is indicated by an arrow 32.

因此,晶圓接收器9機械地連接至載體晶圓組合21及接收構件6,以使得可藉由驅動馬達5影響接收構件6、晶圓接收器9及位於其等之間的載體晶圓組合21之旋轉。旋轉係由旋轉箭頭33顯示。另一選擇係,旋轉可間歇地發生,特定而言以在90°與360°之間的一有限角度交替樞轉運動,且藉由該樞轉運動,載體晶圓組合21之週邊將幾乎完全可由釋放裝置16偵測。 Therefore, the wafer receiver 9 is mechanically coupled to the carrier wafer assembly 21 and the receiving member 6 so that the receiving member 6, the wafer receiver 9 and the carrier wafer combination between them can be affected by the driving motor 5. 21 rotation. The rotation system is indicated by a rotary arrow 33. Alternatively, the rotation may occur intermittently, in particular alternately pivoting at a limited angle between 90° and 360°, and with this pivotal movement, the perimeter of the carrier wafer assembly 21 will be nearly complete. It can be detected by the release device 16.

在連續旋轉期間,可有利地提供一旋轉軸以用於向晶圓接收器9供應壓力線10及感測器線12。 During continuous rotation, a rotating shaft can advantageously be provided for supplying the pressure line 10 and the sensor line 12 to the wafer receiver 9.

接著,藉由釋放裝置致動器20將釋放裝置16移動至圖2中所示且亦在位於圖2之右上方處之一放大精確圖中所示之釋放位置中。 Next, the release device 16 is moved by the release device actuator 20 to the release position shown in FIG. 2 and also shown in one of the enlarged top views at the upper right of FIG.

接著,經由流體線17將溶劑34遞送至釋放裝置16之工作室28中,其中溶劑34在側邊緣23之區域中與互連層3進行接觸且導致互連層3自側面溶解。 The solvent 34 is then delivered via fluid line 17 to the working chamber 28 of the release device 16, wherein the solvent 34 contacts the interconnect layer 3 in the region of the side edges 23 and causes the interconnect layer 3 to dissolve from the sides.

藉由釋放裝置16(尤其係支腿25及26)與其正面35及36之接觸,可將工作室28抵靠接收構件6密封,或可將晶圓接收器9密封至附近。 By contacting the release device 16 (especially the legs 25 and 26) with its front faces 35 and 36, the working chamber 28 can be sealed against the receiving member 6, or the wafer receiver 9 can be sealed to the vicinity.

相反,密封並非極其必要,但卻導致節省溶劑34。 Conversely, sealing is not extremely necessary, but results in solvent savings34.

圖3a、3b及最終在圖3c中顯示在側邊緣23之區域中互連層3之溶解過程。 Figures 3a, 3b and finally in Figure 3c show the dissolution process of the interconnect layer 3 in the region of the side edges 23.

當圖3c中所示之互連層3之邊緣區域幾乎完全溶解直至到達黏合減小層2時,晶圓4係由製成波紋管樣的抽吸杯14抬離載體1,此乃因黏合減小層2與因抽吸杯14而作用產生之拉力相比未施加足夠的黏合力。量測載體1至晶圓接收器9之距離之感測器13實現將載體1自晶圓4剝除(參見圖4),以使得可停止溶劑34至工作室28中之供應且可藉由釋放裝置致動器20將釋放裝置16移動至圖5中所示之初始位置中。 When the edge region of the interconnect layer 3 shown in FIG. 3c is almost completely dissolved until reaching the adhesion reducing layer 2, the wafer 4 is lifted off the carrier 1 by the bellows-like suction cup 14, which is due to adhesion. The reduced layer 2 does not exert sufficient adhesive force as compared to the tensile force generated by the action of the suction cup 14. Detecting the distance of the carrier 1 to the wafer receiver 9 by the sensor 13 enables the carrier 1 to be stripped from the wafer 4 (see Figure 4) so that the supply of solvent 34 to the chamber 28 can be stopped and can be The release device actuator 20 moves the release device 16 into the initial position shown in FIG.

接著,藉由晶圓接收器致動器11舉起載體1以便能夠藉助溶劑線19清潔晶圓4。在清潔晶圓4之後,藉由旋轉晶圓4移除藉由溶劑線19所施加之溶劑37。 Next, the carrier 1 is lifted by the wafer receiver actuator 11 so that the wafer 4 can be cleaned by means of the solvent line 19. After cleaning the wafer 4, the solvent 37 applied by the solvent line 19 is removed by rotating the wafer 4.

接著,可藉由一機械臂將晶圓4供應至額外裝置及處理步驟,且根據本發明之裝置可負載一新的載體晶圓組合21。 Next, the wafer 4 can be supplied to additional devices and processing steps by a robotic arm, and the device according to the present invention can be loaded with a new carrier wafer assembly 21.

圖6顯示根據本發明之裝置之一個替代實施例,該裝置適於處理上文原則上所述已施加至一箔片38之一載體晶圓組合21。 Figure 6 shows an alternative embodiment of a device according to the invention adapted to handle a carrier wafer assembly 21 that has been applied to a foil 38 as described above in principle.

此乃因箔片38係由一膜框39固持,該膜框使得以上述方式橫向接近載體晶圓組合21變得困難。 This is because the foil 38 is held by a film frame 39 which makes it difficult to laterally access the carrier wafer assembly 21 in the manner described above.

因此,在根據圖6之實施例中,釋放裝置16由一尤其無支撐之溶劑線40構成,該溶劑線具有一個位於載體晶圓組合21之側邊緣23之區域中之輸出41。在剝除處理步驟中,可將側邊緣23上之互連層3曝露 於該溶劑。 Thus, in the embodiment according to Fig. 6, the release device 16 is formed by a particularly unsupported solvent line 40 having an output 41 in the region of the side edge 23 of the carrier wafer assembly 21. In the stripping process step, the interconnect layer 3 on the side edge 23 can be exposed In the solvent.

為拆除已固定在箔片38及膜框39上之晶圓4,用於將晶圓自載體剝除之剝除構件除晶圓接收器9之外具有一膜框接收器42。 In order to remove the wafer 4 that has been attached to the foil 38 and the film frame 39, the stripping member for stripping the wafer from the carrier has a film frame receiver 42 in addition to the wafer receiver 9.

膜框接收器42位於晶圓接收器9與晶圓接收器致動器臂30之間且連接至遍佈於壓力線10上之真空。膜框接收器42具有可抽吸膜框39且位於膜框接收器42週邊上之抽吸杯43。 The film frame receiver 42 is located between the wafer receiver 9 and the wafer receiver actuator arm 30 and is connected to a vacuum that is spread over the pressure line 10. The film frame receiver 42 has a suction cup 43 that can be sucked through the film frame 39 and located on the periphery of the film frame receiver 42.

抽吸杯43之功能實質上對應於抽吸杯14之功能。 The function of the suction cup 43 substantially corresponds to the function of the suction cup 14.

在根據本發明之另一實施例中,載體晶圓組合21由一第二載體構成,該第二載體類似地經由一第二互連層連接至載體1相對側上之晶圓4。以此方式,舉例而言,可藉由在兩個互連層中提供不同連接構件及相應地提供不同溶劑將晶圓4置於另一載體上或在不必個別處置晶圓4之情形下轉動晶圓4。晶圓4一直係由一載體(由載體1或由第二載體)支撐。 In another embodiment in accordance with the invention, the carrier wafer assembly 21 is comprised of a second carrier that is similarly coupled to the wafer 4 on the opposite side of the carrier 1 via a second interconnect layer. In this way, for example, the wafer 4 can be placed on another carrier by providing different connection members in the two interconnect layers and correspondingly providing different solvents, or rotating without having to handle the wafer 4 individually. Wafer 4. Wafer 4 is always supported by a carrier (either by carrier 1 or by a second carrier).

1‧‧‧載體 1‧‧‧ Carrier

2‧‧‧黏合減小層 2‧‧‧bonding reduction layer

3‧‧‧互連層 3‧‧‧Interconnect layer

4‧‧‧晶圓 4‧‧‧ Wafer

5‧‧‧驅動馬達 5‧‧‧Drive motor

5w‧‧‧驅動軸 5w‧‧‧ drive shaft

6‧‧‧接收構件 6‧‧‧ Receiving components

7‧‧‧處理室 7‧‧‧Processing room

8‧‧‧汲極 8‧‧‧汲polar

9‧‧‧晶圓接收器 9‧‧‧ Wafer Receiver

10‧‧‧壓力線 10‧‧‧ Pressure line

11‧‧‧晶圓接收器致動器 11‧‧‧ Wafer Receiver Actuator

12‧‧‧感測器 12‧‧‧ Sensors

13‧‧‧感測器 13‧‧‧ sensor

14‧‧‧抽吸杯 14‧‧‧ suction cup

15‧‧‧晶圓接收器支撐件 15‧‧‧ Wafer Receiver Support

16‧‧‧釋放裝置 16‧‧‧ release device

17‧‧‧流體線 17‧‧‧ Fluid line

18‧‧‧致動器 18‧‧‧Actuator

19‧‧‧溶劑線 19‧‧‧Solvent line

20‧‧‧溶劑致動器 20‧‧‧Solvent Actuator

21‧‧‧載體晶圓組合 21‧‧‧ Carrier wafer combination

22‧‧‧內部區域 22‧‧‧Internal area

23‧‧‧側邊緣 23‧‧‧ Side edge

24‧‧‧底部 24‧‧‧ bottom

25‧‧‧支腿 25‧‧‧ legs

26‧‧‧支腿 26‧‧‧ legs

27‧‧‧側壁 27‧‧‧ side wall

28‧‧‧工作室 28‧‧‧Studio

29‧‧‧致動器臂 29‧‧‧Actuator arm

30‧‧‧晶圓接收器致動器臂 30‧‧‧ Wafer Receiver Actuator Arm

31‧‧‧溶劑致動器臂 31‧‧‧Solvent actuator arm

A‧‧‧接收平面 A‧‧‧ receiving plane

Claims (20)

一種用於釋放一互連層之裝置,該互連層提供一介於一載體及一晶圓之間之連接,其形成一載體晶圓組合,該裝置包括:一旋轉構件,其用於使該載體晶圓組合在一釋放位置轉動;及一連接釋放構件,其用於提供一接收該載體晶圓組合之浸漬槽,該連接釋放構件包括:一工作室,其中該載體晶圓組合之週邊之至少一扇段能被容納於該工作室中;及用於將一溶劑傳遞至該工作室之構件,該溶劑用於在該載體晶圓組合之週邊處溶解該互連層。 A device for releasing an interconnect layer, the interconnect layer providing a connection between a carrier and a wafer, forming a carrier wafer assembly, the device comprising: a rotating member for The carrier wafer assembly is rotated in a release position; and a connection release member is provided for providing a dip tank for receiving the carrier wafer assembly, the connection release member comprising: a working chamber, wherein the carrier wafer assembly is surrounded by At least one segment can be received in the working chamber; and a member for transferring a solvent to the working chamber for dissolving the interconnect layer at the periphery of the carrier wafer assembly. 如請求項1之裝置,其中該溶劑在該載體晶圓組合之週邊處作用。 The device of claim 1, wherein the solvent acts at a periphery of the carrier wafer assembly. 如請求項1之裝置,其中該連接釋放構件具有一U形之剖面,該U形之剖面界定該工作室。 The device of claim 1 wherein the attachment release member has a U-shaped cross-section defining the working chamber. 如請求項1之裝置,其中該工作室係由一對支腿及一側壁所界定,該工作室朝向該載體晶圓組合開口。 The device of claim 1, wherein the working chamber is defined by a pair of legs and a side wall, the working chamber being combined toward the carrier wafer opening. 如請求項1之裝置,其中該裝置進一步包含:一接收構件,其用於在一接收平面上接收該載體晶圓組合,該接收平面相對於水平方向具有一5°至90°之間之傾斜角。 The device of claim 1, wherein the device further comprises: a receiving member for receiving the carrier wafer assembly on a receiving plane, the receiving plane having a slope of between 5° and 90° with respect to a horizontal direction angle. 如請求項5之裝置,其中該傾斜角係25°至90°之間。 The device of claim 5, wherein the angle of inclination is between 25° and 90°. 如請求項6之裝置,其中該傾斜角係45°至90°之間。 The device of claim 6, wherein the angle of inclination is between 45 and 90 degrees. 如請求項7之裝置,其中該傾斜角係90°。 The device of claim 7, wherein the angle of inclination is 90°. 如請求項1之裝置,其中該連接釋放構件在0℃至350℃之溫度範 圍中運作。 The device of claim 1, wherein the connection releasing member is at a temperature range of 0 ° C to 350 ° C Working in the encirclement. 如請求項1之裝置,其中該連接釋放構件實質上在不加熱之情形下運作。 The device of claim 1, wherein the connection releasing member operates substantially without heating. 如請求項1之裝置,其中該連接釋放構件進一步包括:機械分離構件,其包括一用於穿透該互連層且用於拆除該互連層之刀片。 The device of claim 1, wherein the connection release member further comprises: a mechanical separation member comprising a blade for penetrating the interconnection layer and for removing the interconnection layer. 如請求項1之裝置,其中該連接釋放構件進一步包括:一用於拆除該互連層之UV光源。 The device of claim 1, wherein the connection releasing member further comprises: a UV light source for removing the interconnect layer. 如請求項1之裝置,其中該工作室在該載體晶圓組合之週邊之附近被密封。 The device of claim 1 wherein the working chamber is sealed adjacent the perimeter of the carrier wafer assembly. 如請求項13之裝置,其中該工作室接收該載體晶圓組合之週邊之一扇段。 The device of claim 13, wherein the studio receives a sector of the perimeter of the carrier wafer assembly. 如請求項1之裝置,其中該裝置進一步包括:剝除構件,其用於將該晶圓自該載體剝除或用於將該載體自該晶圓剝除。 The device of claim 1, wherein the device further comprises: a stripping member for stripping the wafer from the carrier or for stripping the carrier from the wafer. 如請求項15之裝置,其中該剝除構件係可旋轉的。 The device of claim 15 wherein the stripping member is rotatable. 如請求項1之裝置,其中該互連層係一熱塑性黏合劑。 The device of claim 1 wherein the interconnect layer is a thermoplastic adhesive. 如請求項1之裝置,其中該連接釋放構件包括一溶劑線,用於供應用以清潔該晶圓之清潔劑。 The device of claim 1, wherein the connection releasing member comprises a solvent line for supplying a cleaning agent for cleaning the wafer. 如請求項1之裝置,其中該旋轉構件包括一旋轉桿。 The device of claim 1, wherein the rotating member comprises a rotating rod. 一種用於釋放一互連層之方法,該互連層提供一介於一載體及一晶圓之間之連接,其形成一載體晶圓組合,該方法包括以下步驟:在一釋放位置轉動該載體晶圓組合;及在一連接釋放構件之一浸漬槽中接收該載體晶圓組合,該連接釋放構件包括: 在一工作室中容納該載體晶圓組合之週邊之至少一扇段;及將一溶劑傳遞至該工作室,該溶劑用於在該載體晶圓組合之週邊處溶解該互連層。 A method for releasing an interconnect layer, the interconnect layer providing a connection between a carrier and a wafer to form a carrier wafer assembly, the method comprising the steps of: rotating the carrier in a release position a wafer assembly; and receiving the carrier wafer assembly in a dipping tank in one of the connection release members, the connection release member comprising: Storing at least one segment of the perimeter of the carrier wafer assembly in a working chamber; and transferring a solvent to the working chamber for dissolving the interconnect layer at the periphery of the carrier wafer assembly.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111745629A (en) * 2019-03-28 2020-10-09 平田机工株式会社 Drive device and conveying device
TWI716243B (en) * 2019-12-27 2021-01-11 天虹科技股份有限公司 Adhesive removal method after wafer thinning process
TWI781582B (en) * 2020-12-02 2022-10-21 美商美光科技公司 Methods of cleaning and handling microelectronic devices and related tooling and assemblies

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111745629A (en) * 2019-03-28 2020-10-09 平田机工株式会社 Drive device and conveying device
TWI716243B (en) * 2019-12-27 2021-01-11 天虹科技股份有限公司 Adhesive removal method after wafer thinning process
TWI781582B (en) * 2020-12-02 2022-10-21 美商美光科技公司 Methods of cleaning and handling microelectronic devices and related tooling and assemblies

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