TW201442943A - Method and micro device to rapidly manufacture nano metal wire - Google Patents

Method and micro device to rapidly manufacture nano metal wire Download PDF

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TW201442943A
TW201442943A TW102116470A TW102116470A TW201442943A TW 201442943 A TW201442943 A TW 201442943A TW 102116470 A TW102116470 A TW 102116470A TW 102116470 A TW102116470 A TW 102116470A TW 201442943 A TW201442943 A TW 201442943A
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TWI516438B (en
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Ming-Wen Wang
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Oriental Inst Technology
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Abstract

This invention is a method and a micro device to rapidly manufacture nano metal wire. The method is primarily to introduce a reaction solution exclusive for nano metal wire into an electro-thermo microfluidic reaction device, and following the rapid heating reaction, nano metal wire can be produced. The device comprises multiple staggered and overlapped micro channel units and micro heating units. This invention has the benefits of increasing chemical synthesis reaction rate, reducing energy consumption, and achieving rapid and mass production.

Description

快速製造奈米金屬線的方法及其微型裝置 Method for rapidly manufacturing nano metal wire and micro device thereof

本發明「快速製造奈米金屬線的方法及其微型裝置」,涉及一種快速製造取得奈米金屬線,特別是奈米銀線的方法與相關反應裝置。 The invention relates to a method for rapidly manufacturing a nanowire and a micro device thereof, and relates to a method and a related reaction device for rapidly manufacturing a nanowire, in particular a nanowire.

一維奈米金屬材料,例如奈米金、錫、銀、鉑奈米線等,由於其具有良好的導電特性而經常應用於導線材料。由於微觀狀態下,表面效應、量子效應等都會更加明顯,因此一維奈米金屬材料相當適用於各種應用上述效果之奈米電子元件中,或是能被更進一步適用於超導厚膜電路、電極、低溫導電塗料及電磁波吸收材料等處。奈米金屬材料中,由於銀為最佳的導電金屬材料,故奈米銀線的應用最被看好。 One-dimensional nano metal materials, such as nano gold, tin, silver, platinum nanowires, etc., are often used for wire materials because of their good electrical conductivity. Since the surface effect, quantum effect, etc. are more obvious in the microscopic state, the one-dimensional nano metal material is quite suitable for various nanoelectronic components using the above effects, or can be further applied to the superconducting thick film circuit, Electrodes, low temperature conductive coatings and electromagnetic wave absorbing materials. Among the nano metal materials, since silver is the best conductive metal material, the application of nano silver wire is most favored.

就一般材料成長機制而論,面心立方格子結構材料(FCC)的自然生長結構多為立方堆積的均勻晶體生長結構,所以想要合成具有非對稱性型態的結構外型材料,應不若立方堆積晶體結構的合成來的容易,但就工程實用面而論,具有非對稱性型態的結構外型的一維奈米線材在工程上具有相當的應用價值,尤其具有高度軸長比的一維金屬材料對於導電或是導熱具有必然性的助益,因為其 較球狀銀具有更高的接觸機率,而且具高軸長比的銀絲可以使後續的純化步驟更方便,換言之,反應析出物可以輕易地從製程中被分離,不需要任何複雜的製程方式即可純化,最近國內外已有許多一維結構相關的金屬材料製程的研究被提出,目前已被提出的面心立方材料一維結構合成製程包括硬式模版法與溶液相製程法,其中最受歡迎用來合成具結構性奈米銀的方法是溶液相製程法當中的多元醇法,因為多元醇的還原能力主要受到反應溫度的影響,所以可以藉由溫度的調整來控制金屬的成核與成長過程而合成出具各種型態結構的奈米粒子,最重要的,為了控制最終產物的型態結構,製程液相當中通常會加入所謂的”包覆劑”(capping agent)來控制晶體成長方向,由於包覆劑在金屬晶體的不同結晶面上會產生不同的反應強度,所以會產生非對稱性的包覆作用使得金屬在生成過程中產生非對稱性的成長,其中PVP(polyvinyl pyrrolidone)是一維銀線製程中最常被使用的包覆劑材料,不但PVP其單體pyrrolidone官能機上具有氮原子和氧原子可以幫助整個PVP高分子長鏈在銀表面進行吸附,而且PVP具有傾向吸附在成長中銀線的面系列,可以鈍化粒子在面上的持續成長,在諸多晶面當中僅有面系列是PVP吸附較弱的晶面,也因此在面上的晶體長成速度會遠高於其他晶面形成單一維度的晶體生長,一維銀線便能因此非對稱性成長機制而形成,所以PVP的吸附行為是影響銀具非對稱性成長的關鍵,典型的多元醇相合成法係在PVP的存在下將銀前軀物溶於液相多元醇(例如乙二醇)裡,藉由控制一些反應參數如PVP和銀前軀物的莫耳比例、溫度、反應時間和反應劑的添加 順序等,生成粒子的形狀和型態即可達到理想的控制。 As far as the general material growth mechanism is concerned, the natural growth structure of the face-centered cubic lattice structure material (FCC) is mostly a cubic crystal growth uniform structure, so it is desirable to synthesize a structural appearance material having an asymmetrical shape. The synthesis of cubic stacked crystal structure is easy, but in terms of engineering practicality, the one-dimensional nanowire with structural shape of asymmetrical type has considerable application value in engineering, especially with high axial length ratio. One-dimensional metal materials are indispensable for conduction or heat conduction because of their It has a higher contact probability than spherical silver, and the high axial length ratio of the silver wire can make the subsequent purification step more convenient. In other words, the reaction precipitate can be easily separated from the process without any complicated process. It can be purified. Recently, many researches on the fabrication of metal materials related to one-dimensional structures have been proposed at home and abroad. The one-dimensional structure synthesis process of face-centered cubic materials has been proposed, including hard stencil method and solution phase process. The method used to synthesize structured nano-silver is the polyol method in the solution phase process. Because the reducing ability of the polyol is mainly affected by the reaction temperature, the nucleation of the metal can be controlled by temperature adjustment. During the growth process, nano particles with various types of structures are synthesized. Most importantly, in order to control the type structure of the final product, a so-called "capping agent" is usually added to the process liquid phase to control the crystal growth direction. Since the coating agent produces different reaction strengths on different crystal faces of the metal crystal, an asymmetric coating is generated. The growth of the metal is caused by asymmetry in the formation process, wherein PVP (polyvinyl pyrrolidone) is the most commonly used coating material in the one-dimensional silver wire process, and not only the PVP has a nitrogen atom on its monomeric pyrrolidone functional machine. Oxygen atoms can help the entire PVP polymer long chain to adsorb on the silver surface, and PVP has a series of faces that tend to adsorb on the growing silver wire, which can passivate the continuous growth of the particles on the surface. Among the many crystal faces, only the face series is PVP. The weaker crystal plane is adsorbed, so the crystal growth rate on the surface is much higher than that of other crystal planes, and the one-dimensional silver line can be formed by the asymmetric growth mechanism, so the adsorption of PVP Behavior is the key to affect the asymmetric growth of silver. The typical polyol phase synthesis method dissolves the silver precursor in the liquid polyol (such as ethylene glycol) in the presence of PVP, by controlling some reaction parameters. Such as the molar ratio of PVP and silver precursors, temperature, reaction time and addition of reactants Order, etc., to generate the shape and shape of the particles to achieve the desired control.

臺灣在一維奈米銀線的研究上亦有相當成熟的成果,但多是屬於材化領域之研究學者,熱流與能源領域學者則不多見,其中最具代表者應為清華大學化學系周更生教授與國立中山大學理學院院長董騰元教授以及工研院材化所,周更生教授早在2006年就已就奈米線材以溶液相製程的穩定成長與應用製程技術發表一系列的研究成果;另外國立中山大學理學院院長董騰元教授其則是在硬式模版法製作一維金屬線材具有相當傑出的研究成果,尤其是在利用TiO2所具有的光反應特性以觸媒反應方式製作奈米線材的相關研究,以及氧化鋁多孔性膜板化學鍍著成長法製作奈米線材上有著相當傑出之成果,其已能夠製出線徑均一、細長比高的銀、金與鎳線材;另外,工研院材化所在近年來也投入相當多的人力與物力成本進行奈米線材的開發,成果也相當良好,亦在近年的光電展上做出成果展示,奈何材化所在開發線材的方向與主力係集中於顯示器材料的相關應用,對於基本物性與量產機制上著墨不多,能源領域的實用上則未特意關切,製程上依舊依循傳統化學合成製程,如何應用其他工具與跨領域技術進行快速生產則完全未予涉略,距離奈米線材的真正商業化應用與生產,就實用層面來說,尚有一段距離。 There are also quite mature achievements in the research of Taiwan's one-dimensional nano-silver line, but most of them are scholars in the field of materialization, and scholars in the field of heat flow and energy are rare. The most representative one should be the Department of Chemistry of Tsinghua University. Prof. Zhou Gengsheng and Professor Dong Tengyuan, Dean of the School of Science, National Sun Yat-Sen University, and the Institute of Materials Engineering of the Institute of Industrial Science and Technology, Professor Zhou Gengsheng published a series of research results on the stable growth and application process technology of nano-wires in solution phase process as early as 2006. In addition, Professor Dong Tengyuan, Dean of the School of Science at National Sun Yat-Sen University, has made outstanding research results in the fabrication of one-dimensional metal wire by hard stencil method, especially in the use of photoreaction characteristics of TiO 2 to produce nanowires by catalytic reaction. Related research, as well as the alumina porous membrane electroless plating growth method has made outstanding achievements in the production of nanowires, which have been able to produce silver, gold and nickel wires with uniform wire diameter and high slender ratio; In recent years, the research institute has invested a considerable amount of manpower and material costs to develop nanowires, and the results are quite good. The results of the photonics exhibition show that the direction and main force of the development of wire rods are concentrated on the related applications of display materials. There is not much ink on the basic physical properties and mass production mechanism, and the practical use of the energy field is not specifically concerned. The process still follows the traditional chemical synthesis process. How to apply other tools and cross-domain technology for rapid production is not involved at all. From the practical commercial application and production of nanowires, there is still a distance on the practical level.

從以上一維奈米線國內外的研究成果觀之,現有一維奈米線材製造多是利用傳統化學材料製程進行合成,其製程步驟繁鎖、合成反應速度緩慢,在學術與基礎研究上尚屬可行,後續必須要再設計出體積龐大、製程耗能的特殊反應器來進行製程,才有可能達成快速大量製造的 效果,是以,切實導入微系統元件的特殊機置進行一維奈米線材的製造將大有可為,將可有效提升化學合成反應速率、降低製程耗能、以及達成快速大量生產之目的。 From the research results of the above-mentioned one-dimensional nanowires at home and abroad, the existing one-dimensional nanowire manufacturing is mostly synthesized by the traditional chemical material process, the process steps are complicated, the synthesis reaction speed is slow, and the academic and basic research is still It is feasible, and it is necessary to design a special reactor with a large volume and process energy consumption to carry out the process, so that it is possible to achieve rapid mass production. The effect is that the manufacture of one-dimensional nanowires with a special machine for the introduction of micro-system components will be very promising, which will effectively increase the chemical synthesis reaction rate, reduce the process energy consumption, and achieve rapid mass production.

發明人有鑑於此,遂特以研創成本案,期能藉本案之提出,以滿足產業對於快速製造奈米金屬線的實際需求。 In view of this, the inventor has been able to use the case to meet the actual demand for rapid manufacturing of nanowires.

為改善習知技術對於產製奈米金屬線的缺點,本發明主要目的為:提供一種新方法與新裝置,其主要是將備製奈米金屬線用之反應溶液導入一電熱式微流體反應裝置,經快速加熱反應後,即能獲致生成奈米金屬線之目的。 In order to improve the shortcomings of the prior art for producing nanowires, the main object of the present invention is to provide a new method and a novel device, which mainly introduces a reaction solution for preparing a nanowire into an electrothermal microfluidic reactor. After the rapid heating reaction, the purpose of generating a nanowire is obtained.

所述該反應溶液,包括有A、B液,A液組成為適量的PVP(分子量40,000)溶於無水乙二醇(純度99.5%)中並添加硝酸銀溶於其中;B液則為鈉鹽水溶液提供以離子交換反應所需驅動能。先將A液加熱高於室溫(40℃),接著與B液混合並升溫並持續維持在210℃進行奈米銀線之生長反應兩個小時,接著冷卻至室溫再利用去離子水清洗、分離以純化奈米銀線。 The reaction solution comprises A, B liquid, and the liquid A composition is an appropriate amount of PVP (molecular weight 40,000) dissolved in anhydrous ethylene glycol (purity 99.5%) and added with silver nitrate; B liquid is sodium salt aqueous solution Provides the driving energy required for the ion exchange reaction. First, the liquid A is heated above room temperature (40 ° C), and then mixed with the B liquid and heated to maintain the growth reaction of the nano silver wire at 210 ° C for two hours, then cooled to room temperature and then washed with deionized water. Separated to purify the nano silver wire.

本案之所以運用電熱式微流體反應裝置之原因,在於微小尺度下之流體運動因具有相對高流速、高介面體積比(interface surface-to-volume ratio)、高表面張力影嚮及短擴散距離等特性,故應用微流體特性結合化學反應或物理作用於各種化學合成反應製程與研發設計,將可以 達到高效率、高速度、低耗能等優點與目的;快速混合、加溫、冷卻與反應作用是微流體反應裝置設計中相當重要的機制之一,越高程度的混合、升降溫,將可大幅提升反應速率,快速降低微流體裝置在運作時所需要的作用時間及耗能,也因此微流體反應裝置研發的主力多集中於提高混合與熱傳效率上。 The reason why the electrothermal microfluidic reaction device is used in this case is that the fluid movement at a small scale has characteristics such as relatively high flow velocity, high interface surface-to-volume ratio, high surface tension, and short diffusion distance. Therefore, the application of microfluidic properties combined with chemical reactions or physical effects on various chemical synthesis reaction processes and R&D designs will enable Achieve high efficiency, high speed, low energy consumption and other advantages and objectives; rapid mixing, heating, cooling and reaction are one of the most important mechanisms in the design of microfluidic reactors, the higher the degree of mixing, temperature rise and fall, will be The reaction rate is greatly increased, and the time and energy required for the operation of the microfluidic device are rapidly reduced. Therefore, the main research and development of the microfluidic reaction device is focused on improving the mixing and heat transfer efficiency.

另外在快速製造奈米金屬線的微型裝置當中進行穩定加溫使奈米銀線產生成長之製程是相當重要的,需要進行長時間快速加溫的微型加溫裝置並不多見,這是因為一般微型加熱裝置可以提供極為迅速溫定的升溫效果,而目前應用最多的生物醫學晶片在設計上並不可能將生醫組織進行長時間的加溫,所以加熱過程所需要的微流道長度都極短,然而奈米線在傳統化學反應燒瓶中進行生長反應過程其所需要的固定高溫(210℃)反應時間必需要長達20分鐘之久,雖然微流道與微加熱器可大幅加速奈米銀線製程溶液的升溫反應速度,但以200μm/sec流速換算流道整體長度也必需要設計至24cm之譜,因此雖然快速加溫的微型加溫裝置已常見於生物反應晶片與感測晶片的設計當中,本案在快速製造奈米金屬線的微型裝置的設計上仍舊將採所謂的多晶片堆疊組合方式來達成超長微流道定溫加熱設計。 In addition, in the micro-device that rapidly manufactures nano-wires, it is very important to carry out the process of stable heating to make the nano-silver line grow. It is not common to use a micro-heating device that needs to be heated for a long time. This is because Generally, the micro-heating device can provide extremely rapid temperature-increasing heating effect, and the most widely used biomedical wafers are not designed to heat the medical tissue for a long time, so the micro-channel length required for the heating process is Very short, however, the fixed high temperature (210 ° C) reaction time required for the nanowire to grow in a conventional chemical reaction flask must take up to 20 minutes, although the microchannel and microheater can greatly accelerate the Nai The temperature rise reaction speed of the rice silver wire process solution, but the total length of the flow channel at a flow rate of 200 μ m/sec must also be designed to a spectrum of 24 cm, so although the rapidly warming micro-heating device has been commonly used in bioreactive wafers and senses. In the design of the test wafer, the design of the micro-device for rapidly manufacturing the nano-wires will still adopt the so-called multi-wafer stacking combination. Long micro-channel design of constant temperature heating.

所述該快速製造奈米金屬線的微型裝置,包括有複數交錯疊合之微流道單元與微加熱單元。 The micro device for rapidly manufacturing a nanowire includes a micro flow channel unit and a micro heating unit having a plurality of interleaved stacks.

所述該微流道單元,其中一側面凹陷形成有蛇型之微流道,於該微流道之兩相對端點,分別設置有兩端口,其中一端口能貫穿至該微流道單元之另一側面。 The micro flow channel unit is formed with a serpentine microchannel formed on one side of the microchannel, and two ports are respectively disposed at opposite ends of the microchannel, wherein a port can penetrate the microchannel unit The other side.

所述該微流道單元之製作,採用金屬模具直接翻製PDMS微流體結構元件,金屬模具製造方法將捨棄傳統矽基製程改用50μm銅金屬面電木板作為基材。其中一種方式是將厚達100μm之SU8乾膜負光阻直接貼合於銅金屬面電木板上,再利用紫外光配合膠片光罩進行曝光而以NaCO3溶液進行顯影便可作出高40μm之結構性光阻,而後再配合磁控式電漿濺鍍機將結合性極佳之鈦金屬材濺鍍其上形成導體化耐蝕層,直接將抗蝕化完成之基板放入磺酸鎳電鑄槽中進行電鑄便可得到鎳質之微金屬模具,經拔模修整後取得成品。另一種方式是以一般傳統化學腐蝕加工法為基礎,但為了增加成品之尺寸精度所採用之抗蝕劑則以濕式光阻為材料,以紫外光配合膠片光罩進行曝光轉移圖案以顯影劑顯影清洗後將50μm銅金屬面電木基板置於硫酸+硝酸溶液中熱煮或以氯化鐵溶液直接蝕刻即可達成單層50μm厚之微結構流體元件之製作;而為提高加工速度、加工品質以及環保考量,可不採用容易發生過切狀況的化學蝕切方式,而直接用雷射微細加工機直接雕刻金屬面板形成單層微結構,如此也可製成所需元件,其再經後加工化學腐蝕研磨處理毛邊即可製成形狀複雜及複合材料之元件,所有的製程完全在一般大氣環境下操作即可,而製作之元件尺寸約介於十至數百微米左右,相當容易操作。 The micro-flow channel unit is fabricated by directly cutting a PDMS microfluidic structural component by using a metal mold, and the metal mold manufacturing method is to abandon the conventional enamel-based process to use a 50 μm copper metal-surface electric wood board as a substrate. One way is to directly attach SU8 dry film negative photoresist up to 100 μm thick to copper metal surface bakelite, and then use UV light with film mask to expose and develop with NaCO3 solution to make 40 μm high. The structural photoresist of m is then combined with a magnetically controlled plasma sputtering machine to sputter a highly bonded titanium metal material to form a conductive corrosion-resistant layer, and directly insert the resisted substrate into the nickel sulfonate. Electroforming in the electroforming tank can obtain a nickel-based micro-metal mold, which is finished by drafting to obtain a finished product. The other method is based on the general traditional chemical etching process, but the resist used to increase the dimensional accuracy of the finished product is made of wet photoresist, and the exposure film is exposed by ultraviolet light with a film mask. After development cleaning, a 50 μm copper metal surface bakelite substrate is placed in a sulfuric acid + nitric acid solution or directly etched with a ferric chloride solution to achieve a single layer of 50 μm thick microstructured fluid components; Processing speed, processing quality and environmental considerations can be used to directly form a single-layer microstructure by directly engraving a metal panel with a laser micromachining machine without using an chemical etching method that is prone to overcutting conditions, so that it can also be made into a required component. After processing and chemical etching, the burrs can be processed to form components with complex shapes and composite materials. All the processes can be operated under normal atmospheric conditions, and the fabricated components are about ten to several hundred micrometers, which is equivalent. Easy to operate.

所述該微加熱單元,其中一側面之上、下兩端緣處分別佈設有電極,該兩電極間並列有一個或一個以上的加熱絲;另該微加熱單元上設置有一個或兩個穿口。 The micro heating unit has electrodes disposed on the upper and lower ends of one side, and one or more heating wires are juxtaposed between the two electrodes; and the micro heating unit is provided with one or two mouth.

所述該微加熱單元之製作,係將熱傳性質極佳的矽晶圓基板以低濃度NaOH水溶液進行表面清潔,再以旋 轉塗佈方式預塗上一層OmniCoat接著層,再以熱壓合製程貼上一層100μm-SU8負光阻薄膜,然後以紫外光曝光定義電極位置形狀及加熱絲,顯影後再去除處理光阻定義底部Omni Coat部份,並濺鍍金屬鉻接著層,再進行拋磨程序,最後再一次以直流濺鍍法鍍著Ti/W加熱電極,剝離SU8而最後完成電極之安設。 The micro heating unit is prepared by surface cleaning a ruthenium wafer substrate having excellent heat transfer properties with a low concentration NaOH aqueous solution, and then pre-coating an OmniCoat adhesive layer by spin coating, and then performing a thermal compression bonding process. A 100 μm -SU8 negative photoresist film is attached, and then the shape of the electrode and the heating wire are defined by ultraviolet light exposure. After development, the bottom portion of the Omni Coat portion of the photoresist is removed, and the metal chromium layer is sputtered. The polishing process is finally applied to the Ti/W heating electrode by DC sputtering, and the SU8 is peeled off and the electrode is finally mounted.

進一步,將已製作完成之微流道單元與具備電極結構之微加熱單元置於O2/RF Plasma中處理,活化一分鐘後直接對合壓緊(約4-5kg重物壓置),放在陶瓷加熱板上以60℃靜置三十分鐘後冷卻即完成緊密的封裝鍵合,整個製程耗時短、費用便宜而且所有程序完全不需在無塵室中即可完成。最後,將多個封裝鍵合完成之微流道單元與微加熱單元疊組,於最外兩側分別加置有一板體,將該兩板體藉組合元件鎖固結合,即完成本案之微型裝置。 Further, the microfluidic unit and the microheating unit having the electrode structure are placed in O 2 /RF Plasma for treatment, and after one minute of activation, the direct compression is pressed (about 4-5 kg of weight is pressed), and placed. The ceramic hot plate is allowed to stand at 60 ° C for 30 minutes and then cooled to complete the tight package bonding. The entire process is short, inexpensive and all procedures are completely unnecessary in the clean room. Finally, a plurality of packaged micro flow channel units and a micro heating unit are stacked, and a plate body is respectively disposed on the outermost sides, and the two plates are locked and combined by the combination components, thereby completing the miniature of the case. Device.

所述該各板體,穿置有穿口,該穿口能與微流道之對應端口連通。 Each of the plates is provided with a through hole, and the through hole can communicate with a corresponding port of the micro flow channel.

1‧‧‧電熱式微流體反應裝置 1‧‧‧Electrothermal microfluidic reactor

2‧‧‧微流道單元 2‧‧‧Microchannel unit

21‧‧‧微流道 21‧‧‧microchannel

22‧‧‧端口 22‧‧‧Port

23‧‧‧端口 23‧‧‧Port

3‧‧‧微加熱單元 3‧‧‧Micro heating unit

31‧‧‧加熱絲 31‧‧‧heat wire

32‧‧‧電極 32‧‧‧ electrodes

33‧‧‧穿口 33‧‧‧ wearing a mouth

第一圖:係為本案微型裝置之立體組合外觀圖。 The first picture is a three-dimensional combined appearance of the micro device of this case.

第二圖:係為本案微型裝置之立體分解圖。 The second picture is an exploded view of the micro device of this case.

第三圖:係為本案微型裝置之局部立體分解放大示意圖。 The third figure is a partial stereoscopic exploded enlarged view of the micro device of the present invention.

第四圖:係為本案微型裝置之動作示意圖。 The fourth picture is a schematic diagram of the action of the micro device of this case.

以下謹舉例說明,本案快速製造奈米金屬線的 方法及其微型裝置詳細內容。 Here is an example to illustrate the rapid manufacture of nanowires in this case. Method and its micro device details.

本發明快速製造奈米金屬線的方法,主要是將備製奈米金屬線用之反應溶液,導入一電熱式微流體反應裝置,經快速加熱反應後,即能獲致生成奈米金屬線。 The method for rapidly manufacturing a nanowire of the invention mainly comprises introducing a reaction solution for preparing a nanowire into an electrothermal microfluidic reaction device, and after rapid heating reaction, a nanowire can be obtained.

所述該反應溶液,包括有A、B液,A液組成為適量的PVP(分子量40,000)溶於無水乙二醇(純度99.5%)中並添加硝酸銀溶於其中;B液則為鈉鹽水溶液提供以離子交換反應所需驅動能。 The reaction solution comprises A, B liquid, and the liquid A composition is an appropriate amount of PVP (molecular weight 40,000) dissolved in anhydrous ethylene glycol (purity 99.5%) and added with silver nitrate; B liquid is sodium salt aqueous solution Provides the driving energy required for the ion exchange reaction.

如第一圖、第二圖與第三圖,該電熱式微流體反應裝置1,包括有複數交錯疊合之微流道單元2與微加熱單元3。 As shown in the first, second and third figures, the electrothermal microfluidic reaction device 1 comprises a plurality of micro-channel units 2 and a micro-heating unit 3 which are alternately stacked.

所述該微流道單元2,其中一側面凹陷形成有蛇型之微流道21,於該微流道21之兩相對端點,分別設置有兩端口22、23,其中一端口23能貫穿至該微流道單元2之另一側面。 The micro flow channel unit 2 is formed with a serpentine microchannel 21 formed on one side thereof, and two ports 22 and 23 are respectively disposed at opposite ends of the micro channel 21, wherein a port 23 can penetrate through To the other side of the microchannel unit 2.

所述該微加熱單元3,其中一側面之上、下兩端緣處分別佈設有電極32,該兩電極32間並列有一個或一個以上的加熱絲31;另該微加熱單元3上設置有一個或一個以上的穿口33。 The micro heating unit 3 is provided with an electrode 32 disposed on the upper and lower ends of one side, and one or more heating wires 31 are juxtaposed between the two electrodes 32; and the micro heating unit 3 is disposed on the micro heating unit 3 One or more openings 33.

經將一微流道單元2與一微加熱單元3置於O2/RF Plasma中處理,活化一分鐘後直接對合壓緊(約4-5kg重物壓置),放在陶瓷加熱板上以60℃靜置三十分鐘後冷卻 即完成緊密的封裝鍵合。最後,將多個封裝鍵合完成之微流道單元2與微加熱單元3疊組,於最外兩側分別加置有一板體11,將該兩板體11藉組合元件12、13鎖固結合,即完成本案之電熱式微流體反應裝置1。該各板體11,穿置有穿口111,該穿口111能與微流道21之其中一對應端口22或端口23連通。 A micro flow channel unit 2 and a micro heating unit 3 are placed in O 2 /RF Plasma for treatment, and after one minute of activation, they are directly pressed and pressed (about 4-5 kg weight pressed) and placed on a ceramic heating plate. After 30 minutes of standing at 60 ° C, cooling is completed to complete the tight package bonding. Finally, a plurality of package-bonded micro-channel unit 2 and micro-heating unit 3 are stacked, and a plate body 11 is respectively disposed on the outermost sides, and the two plates 11 are locked by the combination elements 12 and 13. In combination, the electrothermal microfluidic reaction device 1 of the present invention is completed. Each of the plates 11 is provided with a through opening 111, and the through opening 111 can communicate with one of the corresponding ports 22 or 23 of the micro flow path 21.

實施時,將反應溶液之A液加熱高於室溫(40℃),接著與B液混合並升溫,將該反應溶液自該電熱式微流體反應裝置1之穿口111輸入,經流入微流道21並行進,持續維持微加熱單元3約在210℃,進行生長反應兩個小時,再由另一端之穿口111輸出,接著冷卻至室溫再利用去離子水清洗、分離以純化奈米銀線。因為奈米銀線進行生長反應過程其所需要的固定高溫(210℃)反應時間必需要長達20分鐘之久,以本案裝置實施,能大幅加速奈米銀線製程溶液的升溫反應速度。 In the implementation, the liquid A of the reaction solution is heated above room temperature (40 ° C), and then mixed with the liquid B and heated, and the reaction solution is input from the opening 111 of the electrothermal microfluidic reaction device 1 through the inflow microchannel. 21 and proceed, continue to maintain the micro-heating unit 3 at about 210 ° C, carry out growth reaction for two hours, and then output from the other end of the mouth 111, then cooled to room temperature and then washed with deionized water, separation to purify the nano silver line. Because the nano-silver wire requires a fixed high temperature (210 ° C) reaction time for the growth reaction process, it takes up to 20 minutes. With the device of the present invention, the temperature rising reaction rate of the nano silver wire process solution can be greatly accelerated.

綜上所述,本案快速製造奈米金屬線的方法及其微型裝置,提供一種相當理想快速的奈米銀線備製技術,具有提升化學合成反應速率、降低製程耗能與達成快速大量生產等優點。本案之技術內容完全符合發明專利之取得要件。本案在產業上確實得以利用,於申請前未曾見於刊物或公開使用,且非為公眾所知悉之技術。再者,本案有效解決先前技術中長期存在的問題並達成相關使用者與消費者長期的需求,得佐證本新型並非能輕易完成。本案富具專利法規定之「產業利用性」、「新穎性」與「進步性」等要件,爰依法提請專利,懇請 鈞局詳查,並儘早為准予專利之審定,以保護申請人之智慧財產權,俾勵創新 。 In summary, the method for rapidly manufacturing nanowires and the micro device thereof provide an ideal and fast nano silver wire preparation technology, which has the advantages of increasing the chemical synthesis reaction rate, reducing the process energy consumption, and achieving rapid mass production. advantage. The technical content of this case is in full compliance with the requirements for the invention patent. The case was indeed exploited in the industry and was not seen in the publication or publicly used before the application, and is not a technology known to the public. Furthermore, this case effectively solves the long-standing problems in the prior art and achieves the long-term needs of relevant users and consumers. It is proved that the new model cannot be easily completed. The case is rich in "industry useability", "novelty" and "progressiveness" as stipulated in the Patent Law. The patents are submitted in accordance with the law, and the bureau is required to investigate in detail and approve the patent as soon as possible to protect the wisdom of the applicant. Property rights, encourage innovation .

本發明雖藉由前述實施例來描述,但仍可變化其形態與細節,於不脫離本發明之精神而達成,並由熟悉此項技藝之人士可了解。前述本案之較佳實施例,僅係藉本案原理可以具體實施的方式之一,但並不以此為限制,應依後附之申請專利範圍所界定為準。 The present invention has been described by way of example only, and it is to be understood by those skilled in the art. The preferred embodiment of the present invention is only one of the ways in which the present invention can be implemented in a specific manner, but is not limited thereto, and should be defined in the scope of the appended patent application.

1‧‧‧微型裝置 1‧‧‧Microdevice

2‧‧‧微流道單元 2‧‧‧Microchannel unit

3‧‧‧微加熱單元 3‧‧‧Micro heating unit

Claims (6)

一種快速製造奈米金屬線的方法,係將備製奈米金屬線用之反應溶液,導入一具有蛇型微流道且能加熱之電熱式微流體反應裝置,經加熱反應後,即能生成奈米金屬線。 A method for rapidly manufacturing a nanowire is to introduce a reaction solution for preparing a nanowire into a electrothermal microfluidic reaction device having a serpentine microchannel and capable of heating, and after being heated, a naphthalene can be produced. Rice metal wire. 如申請專利範圍第1項所述之快速製造奈米金屬線的方法,其中該反應溶液,包括有A、B液,A液組成為適量的PVP溶於無水乙二醇中並添加硝酸銀溶於其中;B液則為鈉鹽水溶液。 The method for rapidly manufacturing a nanowire according to claim 1, wherein the reaction solution comprises A and B liquids, and the liquid A is composed of an appropriate amount of PVP dissolved in anhydrous ethylene glycol and dissolved in silver nitrate. Among them; liquid B is an aqueous solution of sodium salt. 如申請專利範圍第2項所述之快速製造奈米金屬線的方法,其中該PVP之分子量為40,000。 A method of rapidly producing a nanowire according to claim 2, wherein the PVP has a molecular weight of 40,000. 如申請專利範圍第2或3項所述之快速製造奈米金屬線的方法,其中該無水乙二醇之純度為99.5%。 A method of rapidly producing a nanowire according to claim 2 or 3, wherein the anhydrous ethylene glycol has a purity of 99.5%. 如申請專利範圍第1項所述之快速製造奈米金屬線的方法,其中該電熱式微流體反應裝置,包括有複數交錯疊合之微流道單元與微加熱單元;該微流道單元,其中一側面凹陷形成有蛇型之微流道,於該微流道之兩相對端點,分別設置有兩端口,其中一端口能貫穿至該微流道單元之另一側面;該微加熱單元,其中一側面之上、下兩端緣處分別佈設有電極,該兩電極間並列有一個或一個以上的加熱絲;另該微加熱單元上設置有一個或一個以上的穿口;將多組微流道單元與微加熱單元疊組,於最外兩側分別加置有一板體,並將該兩板體藉組合元件鎖固結合。 The method of rapidly manufacturing a nanowire according to claim 1, wherein the electrothermal microfluidic reaction device comprises a plurality of interlaced microchannel units and a micro heating unit; wherein the microchannel unit a serrated microchannel is formed on one side of the recess, and two ports are respectively disposed at opposite ends of the microchannel, wherein one port can penetrate to the other side of the microchannel unit; the micro heating unit, An electrode is disposed on one of the upper side and the lower end edge, and one or more heating wires are juxtaposed between the two electrodes; and the micro heating unit is provided with one or more through holes; The flow channel unit and the micro heating unit are stacked, and a plate body is respectively disposed on the outermost sides, and the two plates are locked and combined by the combination component. 一種電熱式微流體反應裝置,包括:複數交錯疊合之微流道單元與微加熱單元;其中該微流 道單元,其中一側面形成有蛇型之微流道,於該微流道之兩相對端點,分別設置有兩端口,其中一端口能貫穿至該微流道單元之另一側面;該微加熱單元,其中一側面佈設有兩呈分離關係之電極,該兩電極間並列有一個或一個以上的加熱絲;又該微加熱單元上設置有一個或一個以上的穿口;兩板體,分設於各微流道單元與微加熱單元外部,藉組合元件鎖固結合;該各板體包括有一穿口,該穿口能與微流道之其中一對應端口連通。 An electrothermal microfluidic reaction device comprising: a plurality of interlaced microfluidic cells and a microheating unit; wherein the microfluidics a channel unit, wherein one side is formed with a serpentine microchannel, and two opposite ports are respectively disposed at two opposite ends of the microchannel, wherein one port can penetrate to the other side of the microchannel unit; a heating unit, wherein one side is provided with two electrodes in a separated relationship, and one or more heating wires are juxtaposed between the two electrodes; and the micro heating unit is provided with one or more through holes; The micro-channel unit and the micro-heating unit are disposed outside the micro-heating unit, and are combined and locked by the combination component; the plates include a through hole, and the opening can communicate with one of the corresponding ports of the micro flow channel.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112691624A (en) * 2020-12-04 2021-04-23 中北大学 Laminated integrated reactor and use method thereof
CN112691624B (en) * 2020-12-04 2022-08-19 中北大学 Laminated integrated reactor and use method thereof

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