TW201436075A - Package of environmentally sensitive electronic device and fabricating method thereof - Google Patents

Abstract

An environmentally sensitive electronic device may include a first substrate, a second substrate, an environmentally sensitive electronic element, a sealing portion and a filler. The environmentally sensitive electronic element is disposed on the first substrate and sandwiched by the first substrate and the second substrate. The sealing element is sandwiched by the first substrate and the second substrate and surrounding the environmentally sensitive electronic element. The sealing element may comprise a transition metal-metalloid bonding therein.

Description

Environmentally sensitive electronic device and packaging method thereof

The present disclosure relates to a package and a method of fabricating the same, and to an environmentally sensitive electronic device and a method of packaging the same.

In recent years, soft components have been widely used. The soft substrate is also a major component of the soft component. The flexible substrate is flexible, easy to carry, and safe. It is widely used not only in consumer products, but also widely used in other products. Therefore, how to prevent the soft substrate from blocking moisture and oxygen penetration, and not causing the aging of the components in the substrate. This leads to a shortened life of the fabricated components, which is important for commercial application needs.

The present disclosure proposes an environmentally sensitive electronic device and a method of fabricating the same to effectively isolate environmentally sensitive electronic components from moisture and oxygen, thereby avoiding aging of environmentally sensitive electronic components and extending component life.

In one or more exemplary embodiments of the present disclosure, an environmentally sensitive electronic device and a method of fabricating the same can be provided. The sub-device can include a first substrate, environmentally sensitive electronic components, a second substrate, and a package. At least a portion of the circumference of the first substrate is defined as a first package region, and the first package region has a first encapsulation material therein. The environmentally sensitive electronic component is located on the first substrate and is surrounded by the first package area. A periphery of at least a portion of the second substrate is defined as a second package region, and a location of the second package region corresponds to a location of the first package region, and a second package material is present in the second package region. The package is located between the first package region and the second package region, and the package includes at least a portion of the first package material and at least a portion of the second package material.

The method of fabricating an environmentally sensitive electronic device of the present disclosure can include disposing an environmentally sensitive electronic component on a first surface of the first substrate. A first type of metal film layer is disposed on the first surface of the first substrate. A second type of metal film layer is disposed on the second surface of the second substrate. The second substrate is overlaid on the first substrate such that the first surface is opposite the second surface. The first type of metal film layer and the second type metal film layer are surface-activated in a vacuum environment. Applying pressure to the first substrate and the second substrate to contact the first package region of the first surface and the second package region of the second surface, and to activate the activated first metal film layer and the activated second type A package having a metal and metalloid bond is formed between the metal film layers.

As described above, the package is disposed between the first substrate and the second substrate and surrounds the environmentally sensitive electronic component. Therefore, the package of the environmentally sensitive electronic device of the embodiment of the disclosure has a good ability to block moisture and oxygen, and can effectively extend the life of the environmentally sensitive electronic component therein.

In order to make the disclosure more apparent, the following embodiments are specifically described, and The details of the drawings are as follows.

10a, 10b, 10c, 20a and 20b‧‧‧ Environmentally sensitive electronic devices

106‧‧‧flat layer

110,210‧‧‧First substrate

115,215‧‧‧ wires

117‧‧‧ Circuitry

120,220‧‧‧second substrate

130,230‧‧‧Environmentally sensitive electronic components

132,232‧‧‧Display media

134,234‧‧‧Active components

140,240‧‧‧Filling body

142‧‧‧Stained materials

150,250‧‧‧ metal film

150a‧‧‧First type metal film

150b‧‧‧Second type metal film

150c‧‧‧First packaging material

150d‧‧‧Second packaging material

152,252‧‧‧Package

160, 160a, 160b, 160c, 260‧‧‧ first sidewall barrier structure

190‧‧‧Ion beam source

191‧‧‧ metal source

264,264A,264B,264C‧‧‧second sidewall barrier structure

266,266A, 266B, 266C‧‧‧ second sidewall barrier structure

P‧‧‧ pressure

FIG. 1A is a schematic cross-sectional view of an environmentally sensitive electronic device according to a first embodiment of the present disclosure.

1B is a top plan view of the environmentally sensitive electronic device of the first embodiment of the present disclosure.

2A is a schematic cross-sectional view of an environmentally sensitive electronic device according to a second embodiment of the present disclosure.

FIG. 2B is a partial cross-sectional view showing each embodiment of the first sidewall barrier structure of the environmentally sensitive electronic device according to the second embodiment of the present disclosure.

2C is a cross-sectional view of the environmentally sensitive electronic device of the third embodiment of the present disclosure.

FIG. 2D is a partial cross-sectional view showing each embodiment of the first sidewall barrier structure of the environmentally sensitive electronic device according to the third embodiment of the present disclosure.

2E through 2N are partial cross-sectional views of various embodiments of the environmentally sensitive electronic device of the present disclosure.

3A is a top plan view of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure.

3B to 3C are two cross-sectional views of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure.

3D to 3E are diagrams of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure Schematic diagram of the deflection state.

3F to 3K are schematic views of two kinds of flexing states of the environmentally sensitive electronic device according to the fourth embodiment of the present disclosure.

4A to 4N are schematic views of an embodiment of a method of manufacturing an environmentally sensitive electronic device.

FIG. 5 is a schematic flow chart of the method for manufacturing an environmentally sensitive electronic device.

The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.

As shown in FIGS. 1A and 1B, FIG. 1A is a schematic cross-sectional view of the environmentally sensitive electronic device of the first embodiment of the present disclosure. 1B is a top plan view of the environmentally sensitive electronic device of the first embodiment of the present disclosure. In the first embodiment, the environmentally sensitive electronic device 10a includes a first substrate 110, a plurality of wires 115, a second substrate 120, environmentally sensitive electronic components 130, a filler body 140, and a package 152. The filler body 140 may be a rubber material. For convenience of description, the following is an example of the rubber material, but is not intended to limit the scope of the disclosure. The filler body 140 covers the environmentally sensitive electronic component 130 and is interposed between the first substrate 110 and the second base Between the plates 120.

At least a portion of the periphery of the first substrate 110 is defined as a first package region having a first encapsulation material to form the package 152 in the first package region. The first substrate 110 may be a flexible substrate or a rigid substrate, and the disclosure is not limited. The material of the flexible substrate may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), polymethyl Polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), polyamidamine (PI) or metal foil. The material of the rigid substrate may be glass, a printed circuit board (PCB), a metal substrate or any other equivalent material.

In an embodiment, the second substrate 120 is located on the first substrate, and at least a portion of the periphery of the second substrate 120 is defined as a second package region. The location of the second package region corresponds to the first package region, and the second package region has a second package material to form the package 152. The second substrate 120 may be a flexible substrate or a rigid substrate, and the disclosure is not limited. The material of the flexible substrate may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), polymethyl Polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), polyamidamine (PI) or metal foil. The material of the rigid substrate may be glass, a printed circuit board (PCB), a metal substrate or any other equivalent material. In an embodiment of the present disclosure, the first substrate 110 and the second substrate 120 are both flexible substrates. In addition, the first substrate 110 and the second substrate 120 may have a functional substrate, wherein the functional substrate is, for example, a gas barrier functional substrate, a color filter substrate, a blocking ultraviolet light functional substrate, a scratch resistant wear resistant substrate, and light enhancement. The function substrate and the touch function substrate are taken out, for example, but not limited to a surface capacitive touch, a digital matrix touch substrate (such as a projected capacitive touch substrate) or an analog matrix touch substrate, or the above The functional substrate integrated by each function is, for example, a gas barrier and a touch integrated substrate, and various other combinations are not described in detail.

The environmentally sensitive electronic component 130 is located on the first substrate 110 between the first substrate 110 and the second substrate 120 and surrounded by the first package region and the second package region. In one embodiment, the environmentally sensitive electronic component 130 can include a display medium 132 and an active component 134 (or passive component). In the first embodiment of the present disclosure, the environmentally sensitive electronic component 130 may be a display component of an active environmentally sensitive electronic component or a display component of a passive environmentally sensitive electronic component. The active environmentally sensitive electronic component display component can be, for example, an Active Matrix Organic Light Emitting Diode (AM-OLED) or an Active Matrix Electrophoretic Display (AM-EPD). ), commonly known as electronic paper, or Active Matrix Liquid Crystal Display (AM-LCD), or active matrix blue phase liquid crystal display (Active Matrix Blue Phase Liquid Crystal Display, AM-BPLCD) or any other equivalent display. Passive environmentally sensitive electronic component display component, which may be, for example, a passive OLED array (PM-OLED) or a Super Twisted Nematic Liquid Crystal Display (STN-LCD) or Any other equivalent display, other environmentally sensitive electronic components such as an Organic Solar Cell, an Organic Photo Sensor, etc., will not be described in detail.

A plurality of wires 115 may be located on the first substrate 110 and connect the environmentally sensitive electronic components 130. Wire 115 is used as a medium for signal transmission to enable environmentally sensitive electronic component 130 to interact with external circuitry. The material of the wire 115 may be, but not limited to, a metal or a metal alloy.

The filler body 140 may be located between the first substrate 110 and the second substrate 120, and the filler body 140 surrounds the environmentally sensitive electronic component 130. In the first embodiment, the filling body 140 can be, for example but not limited to, an acrylic resin or an epoxy resin. The filling body 140 can be a film type rubber or a liquid type glue before being cured. material. In certain embodiments (described below), the package of environmentally sensitive electronic components of the present disclosure may not have a filler body 140.

The package 152 may be located between the first substrate 110 and the second substrate 120, and the package 152 includes a portion of the first encapsulation material and a portion of the second encapsulation material. In the first embodiment, as shown in FIG. 1B, the package 152 surrounds the environmentally sensitive electronic component 130 and the filler body 140. The so-called surround, The arrangement is disposed on at least one side of the environmentally sensitive electronic component 130, on either or both sides of the environmentally sensitive electronic component 130, or around the ambient sensitive electronic component 130. The package 152 surrounds the environment-sensitive electronic component 130 and is surrounded by a closed type, and the rest is a non-closed surround. The first encapsulating material and the second encapsulating material in the package 152 may be, for example but not limited to, a metal-containing and transition metal element.

More specifically, a metal-like film layer is disposed on the first package region of the first substrate 110, and a metal-like film layer is also disposed on the second package material of the second substrate 120. Two of the metal-like film layers, for example, a bismuth (Si)-containing film layer, may be, but not limited to, SiNx, SiOx, SiOxNy, SiNxOy, where x and y are arbitrary real numbers. The method for setting the metal-like film layer may be, for example, a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method, or a sputtering method, and the present disclosure does not This is limited. The first encapsulating material and the second encapsulating material are respectively doped on the surface of the two metal-like film layers to surface-activate the two metal-like film layers. For the doping process, refer to a conventional literature such as Room temperature SiO2 wafer bonding by Adhesion layer method; R Kondou, T Suga, Technology Conference (ECTC), 2011 mentions the first etching using an ion beam followed by ion beam sputtering coating doping.

The first encapsulating material and the second encapsulating material are in contact with each other, and a metal-like and transition metal bonding is formed under a certain pressure, and an interface between the first metal film layer and the first encapsulating material and the second metal film layer and Second package The interface of the material will form a transition metal-based metal bond, for example, a Si-Fe bond. The package body 152 includes at least a portion of the first encapsulating material and at least a portion of the bonding layer of the second encapsulating material (not shown).

The foregoing transition metals may be, for example but not limited to, ruthenium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, lanthanum, zirconium, hafnium, molybdenum, niobium, tantalum, niobium, palladium, silver, cadmium. , bismuth, antimony, tungsten, heavy, bismuth, antimony, platinum, gold, mercury, with iron (Fe), chromium (Cr) as an example. The foregoing first type of metal material may be, for example but not limited to, boron, boride, antimony, telluride, antimony, telluride, arsenic, arsenide, antimony, telluride, antimony, telluride, antimony or telluride, wherein Take 矽 as an example.

Briefly, since the package 152 is located between the first substrate 110 and the second substrate 120, the environmentally sensitive electronic component 130 and the filler body 140 are surrounded. The package 152 can well shield the environmentally sensitive electronic component 130 from moisture and oxygen, thereby effectively extending the life of the environmentally sensitive electronic component 130.

In the second embodiment, as shown in FIG. 2A, it is a schematic cross-sectional view of the environmentally sensitive electronic device of the second embodiment. The environmentally sensitive electronic device 10b may include a first substrate 110, a plurality of wires 115, a second substrate 120, environmentally sensitive electronic components 130, a filler body 140, a metalloid film layer 150, a package body 152, and a first sidewall barrier structure 160. The first sidewall barrier structure 160 can be, for example, a strip-shaped sidewall-wall barrier (SWB). The first sidewall barrier structure 160 may be located on the second substrate 120. The metal-like film layer 150 may be between the first substrate 110 and the first sidewall barrier structure 160. And package 152 It may be located between the metal-like film layer 150 and the first substrate 110. More specifically, the package 152 is formed by a portion of the metal-like film layer 150 located at the top end of the first sidewall barrier structure 160.

The aforementioned first sidewall barrier structure 160 is located in the second package region of the second substrate 120. The material of the first sidewall barrier structure 160 may be, but not limited to, polyacrylamide (PI), acrylic (Acrylic) resin, epoxy (Epoxy) resin, polyethylene terephthalate (polyethylene terephthalate, PET), polyethylene naphthalate (PEN), polyether sulfone (PES), polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), metal Or a glass, a surface of the first sidewall barrier structure 160 may be provided with a metal-like film layer 150, and a surface of the metal-like film layer 150 is doped with a second encapsulating material, such as a metal-containing film layer 150, for example, a germanium (Si)-containing thin film layer. It may be, but not limited to, bismuth (Si), tantalum nitride (SiNx), yttrium oxide (SiOx), lanthanum oxynitride (SiNxOy) or any other similar material, formed in a single layer or a combination of layers, and may utilize chemical gas. It is produced by a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method or a sputtering method. A metal-like film layer is disposed on the first package region of the first substrate 110, and the first package material is deposited and doped thereon, so that the first package region and the second package region can be opposite to each other, and the flow described later is disclosed. The package 152 will be formed in a region where the first encapsulating material is in contact with the second encapsulating material. Therefore, the package 152 (see the enlarged view of FIG. 4N) is located between the first sidewall barrier structure 160 and the first substrate 110.

As shown in FIG. 2B, it is a partial cross-sectional view of the environmentally sensitive electronic device of the second embodiment of FIG. 2A including the first sidewall barrier structure 160. The first sidewall barrier structure 160 may be, for example, a bell shape in this embodiment. The metal-like film layer 150 can be formed to form a gas barrier film disposed on the first sidewall barrier structure 160. The contact portion between the metal-like film layer 150 and the first substrate 110 forms a package 152.

In the third embodiment, as shown in FIG. 2C, it is a schematic cross-sectional view of the environmentally sensitive electronic device of the third embodiment of the present disclosure. In the environmentally sensitive electronic device 10c, the first sidewall barrier structure 160 may be located in a first package region on the first substrate 110. The metal-like film layer 150 is disposed on the surface of the first sidewall barrier structure 160, and the surface of the metal-like film layer 150 is deposited and doped with the first encapsulation material. The second package region on the second substrate 120 is provided with a metal-like film layer deposited and doped with a second encapsulation material. Therefore, as in the example of FIG. 2A, the package body 152 is formed in a portion where the metal-like film layer 150 is in contact with the second package region of the second substrate 120.

As shown in FIG. 2D, it is a partial cross-sectional view of each embodiment of the first sidewall barrier structure of the environmentally sensitive electronic device of the third embodiment 2C. The first sidewall barrier structure 160 may be, for example, a bell shape in this embodiment. The metal-like film layer 150 can be formed to form a gas barrier film disposed on the first sidewall barrier structure 160. The contact portion between the metal-like film layer 150 and the second substrate 120 forms the package 152.

As shown in Figures 2E to 2N, it is the environmental sensitivity of the present disclosure. A partial cross-sectional view of various embodiments of an electronic device. The shape of the first sidewall barrier structure may be, for example but not limited to, a rectangle, as shown in Figures 2E to 2G, or a trapezoid as shown in Figures 2H to 2J. In addition, the environmentally sensitive electronic device can include one or more first sidewall barrier structures 160, 160a, 160b, 160c, the sidewall barrier structures 160, 160a, 160b, 160c, and the sidewall barrier structures 160, 160a, 160b, 160c can be, for example However, it is not limited to being in a concentric manner (as viewed from the top view of FIG. 1B) on the first substrate and between the first package area and the second package area, such as FIG. 2G, FIG. 2J, and 2K. Figure to Figure 2N. In this case, if there is a gap between the two first side wall barrier structures 160a, 160b, as shown in FIG. 2G and FIGS. 2J to 2L, the gap can be filled with the glue 142. The material of the rubber material 142 may be, for example but not limited to, a getter material or a resin, and the getter material may be, for example but not limited to, calcium (Ca), calcium oxide (CaO), calcium aluminide (CaAl2), aluminized germanium ( BaAl4), calcium aluminide (CaAl2), nickel (Ni) and resin mixture; or barium aluminide (BaAl4) nickel (Ni) and resin mixture, calcium-strontium-aluminum (Ca-Ba-Al) and resin mixture, resin The material may be, for example but not limited to, an epoxy resin, a ruthenium compound resin, or a ruthenium oxide resin. Another embodiment can be designed to have no gap between the two first sidewall barrier structures 160a, 160b after precision alignment, as shown in Figures 2M and 2N, as well as in the two classes before pressing. The surface of the metal film layer is separately deposited and doped with the first encapsulating material and the second encapsulating material, and the ion beam is first used for etching, then the ion beam and sputter coating are deposited and doped, and finally the pressure bonding is performed, and the same can be performed. The contact portion between the two metal-like film layers 150 forms the package 152.

In the embodiment of FIG. 2A to FIG. 2N, the metal-like film layer 150 is located on the first sidewall barrier structure 160. However, the metal-like film layer 150 may also be located on the first substrate 110 or the second substrate 120 or On the first substrate 110 and the second substrate 120.

In the foregoing various embodiments, when the package 152 encloses the environmentally sensitive electronic component 130 in a closed manner, since no moisture or oxygen passes through the package 152, the first substrate 110 and the second substrate 120 are The filler body 140 may not be needed between.

In a fourth embodiment of the environmentally sensitive electronic device according to the fourth embodiment of the present disclosure, as shown in FIGS. 3A to 3E, FIG. 3A is a plan view of the environmentally sensitive electronic device according to the fourth embodiment of the present disclosure, and FIG. 3B. 3 and FIG. 3C are two different cross-sectional views of the environmentally sensitive electronic device of FIG. 3A according to the fourth embodiment of the present disclosure. The environmentally sensitive electronic device 20a may include a first substrate 210, a plurality of wires 215, a second substrate 220, environmentally sensitive electronic components 230, a filler body 240, a metal-like film layer 250, a package 252, and a first sidewall barrier structure 260. And a second sidewall barrier structure 264. The first sidewall barrier structure 260 and the second sidewall barrier structure 264 may be located in the second package region on the second substrate 220. Each of the first sidewall barrier structures 260 can be a barrier wall, and each of the second sidewall barrier structures 264 can be a barrier pillar. As shown in FIG. 3A, the environmentally sensitive electronic component 230 and the filler body 240 are surrounded by the first sidewall barrier structure 260 and the plurality of second sidewall barrier structures 264. The metal-like film layer 250 may be located on a surface of the first sidewall barrier structure 260 and a surface of the second sidewall barrier structure 264. In class The surface of the metal film layer 250 is deposited and doped with a second encapsulating material, and a metal-like film layer having a surface deposited and doped with the first encapsulating material is disposed in the first encapsulation region on the first substrate 210. Therefore, the package portion 252 is formed at the contact portion between the metal-like film layer 250 and the first substrate 210. In this embodiment, each of the second sidewall barrier structures 264 may be, for example, a sidewall barrier structure that exhibits an island shape, a bell shape, or a column shape. A plurality of gaps between the second sidewall barrier structure 264 and the first sidewall barrier structure 260 may fill the filler body 240. Since the material of the filling body 240 is an elastic material, for example, but not limited to, an acrylic resin or an epoxy resin, the rubber material 240 may be a film type rubber material or a liquid type rubber material before being cured. . The environmentally sensitive electronic device 20a can be flexed. As shown in FIGS. 3D and 3E, the contact portion between the metalloid film layer 250 and the first substrate 210 forms a region of the package 252 that is not bent, in bending. The region includes a second sidewall barrier structure 264 (ie, second sidewall barrier structures 264a-264c) and a filler body 240 region, and the second sidewall barrier structure 264 can be located on the second substrate 220, since the material of the filler body 240 is The elastic material thus absorbs the squeezing of the second sidewall barrier structure 264 when bent.

As shown in Figures 3F to 3H. FIG. 3F is a schematic top view of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure. FIG. 3G is a cross-sectional view showing the 3F of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure. The 3H is a schematic diagram of a flexed state of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure. The environmentally sensitive electronic device 20b may further include a plurality of second sidewall barrier structures 266 as compared to FIG. 3A. Each second sidewall barrier The shape of the structure 266 can be an island shape, a bell shape, a column shape, or other shape that can be pressed against the filler body 240 to withstand extrusion. In this embodiment, the environmentally sensitive electronic device 20b can be flexed as shown in FIG. 3H.

3I to 3K, FIG. 3I is a schematic top view of the apparatus of the fourth embodiment of the present disclosure. FIG. 3J is a cross-sectional view showing the environmentally sensitive electronic device of the fourth embodiment in FIG. 3I. The 3K figure is a schematic diagram of a flexed state of the environmentally sensitive electronic device of the fourth embodiment of the present disclosure. 3I, compared to FIG. 3A, the environmentally sensitive electronic device 20c may include two first sidewall barrier structures 260 located at a first edge (as shown at the left end) and a second edge of the environmentally sensitive electronic device (eg, The figure shows the right end), and a plurality of second sidewall barrier structures 264 are located at the third and fourth edges of the environmentally sensitive electronic device, namely the upper and lower ends. In this embodiment, the environmentally sensitive electronic device 20b can be flexed as shown in FIG. 3K.

In the embodiments of FIGS. 3A-3J, the metal-like film layer 250 may be located on the first sidewall barrier structure 260 and the second sidewall barrier structure 264, however, the metal-like film layer 250 may also be located in the first A substrate 210 or a second substrate 220 or the first substrate 210 and the second substrate 220.

As shown in FIGS. 4A to 4N, it is a schematic diagram of an embodiment of the method for manufacturing an environmentally sensitive electronic device. The environmentally sensitive electronic device 10b of Fig. 2A will describe the manufacturing method in more detail from Fig. 4A to Fig. 4N.

As shown in Figures 4A to 4C, this disclosure is environmentally sensitive. A cross-sectional view of an embodiment of an electronic device manufacturing method. As shown in FIG. 4A, in the method for manufacturing an environmentally sensitive electronic device, the first sidewall barrier structure 160 may be disposed on the second package region on the second substrate 120. The second substrate 120 may be a flexible substrate or a rigid substrate.

As shown in FIG. 4B, the first type of metal film layer 150a may be subsequently disposed on the second substrate 120. The first type of metal film layer 150a surrounds the first sidewall barrier structure 160. The method for configuring the first type of metal film layer 150a may be, for example, but not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering (Sputter). Deposition method. The material of the first type metal film layer 150a may be, for example but not limited to, bismuth (Si), tantalum nitride (SiNx), yttrium oxide (SiOx), lanthanum oxynitride (SiNxOy) or any other similar material, in a single layer. Or formed in a multi-layer combination. The thickness of the first type of metal film layer 150a may be, for example, but not limited to, 0.01 micrometers to 100 micrometers, and may have a function of blocking moisture and oxygen. In another embodiment, more than one metal-like film layer may be disposed on the second substrate 120. Each of the one or more metal-like film layers may be a different material. As shown in FIG. 4C , the filling body 140 is disposed on the second substrate 120 , and the filling body 140 is surrounded by the first sidewall blocking structure 160 . However, in some embodiments, the flow of Figure 4C is not necessary because the filler 140 is not required.

As shown in FIG. 4D to FIG. 4F, FIG. 4D is a schematic top view of the first substrate of the environmentally sensitive electronic device according to an embodiment of the present disclosure. Will be multiple The wire 115 is disposed on the first substrate 110. A plurality of circuits 117 and an active component 134 (or a passive component) are disposed on the first substrate 110. As shown in FIGS. 4E and 4F, due to the arrangement of the plurality of wires 115 and the plurality of circuits 117, there is an uneven region on the surface of the first substrate 110.

As shown in FIG. 4G to FIG. 4I, FIG. 4G is a schematic top view of the first substrate of the environmentally sensitive electronic device manufacturing method. Due to the configuration of the plurality of wires 115 and the plurality of circuits 117, there is an uneven region which can be planarized to form a flat layer 106, as shown in FIGS. 4H and 4I, a flat layer The material of 106 is, for example, but not limited to, a polymer series material such as a photosensitive-photosensitive polyimide, a photo-sensitive Acrylic series photoresist, and a photosensitive bismuth-containing light. The flattening process can be, but is not limited to, using yellow light, lithography, etching, and the flat surface 106 has a surface roughness of less than about 50 nanometers, and an embodiment of less than 10 nanometers. The wire 115 or circuit 117 region may be filled in after the planarization process, and the flattened planar layer 106 may provide a planarized second metal film layer 150b to provide a planar surface for subsequent processing.

As shown in FIG. 4J, it is a schematic cross-sectional view of the first substrate of the environmentally sensitive electronic device of the embodiment. The environmentally sensitive electronic component 130 can include a display medium 132 and an active component 134 that can be formed on an active component 134 to form an environmentally sensitive electronic component 130. A second type of metal film layer 150b may be disposed on the first substrate 110. Although, in FIG. 4J, the second type of metal film layer 150b is disposed over the environmentally sensitive electronic component 130 and the planarization layer 106, the second type of metal film layer 150b does not need to completely (closely) surround the environmentally sensitive electrons. Element 130 may also be partially (non-closed) surrounding environmentally sensitive electronic component 130. The thickness of the second type metal film layer 150b may be, for example, but not limited to, 0.01 micrometers to 100 micrometers. In another embodiment, more than one metal-like film layer may be disposed on the first substrate 110. The one or more metal-like film layers of each may be composed of different materials and formed in a single layer or a combination of layers.

In the above method, the process of the second substrate 120 is performed before the process of the first substrate 110. However, in another embodiment, the process of the first substrate 110 may also be performed in the process of the second substrate 120. Or at the same time.

As shown in FIG. 4K, the second substrate 120 may be disposed on the first substrate 110. The thickness of the filler body 140 can be suitably designed to form a gap between the first type of metal film layer 150a and the second type of metal film layer 150b to facilitate further processing.

As shown in FIG. 4L, at least one ion beam source 190 and a metalloid source 191 are used for depositing and doping metalloid and transition metal ions onto the first metal film layer 150a and the second metal film layer 150b. The method is, for example, first performing surface treatment of the ion beam source on the first type of metal film layer 150a and the second type metal film layer 150b, followed by simultaneously depositing and doping the metalloid source 191 and the ion beam source 190, in the first type of metal film. Layer 150a and second type metal film layer 150b, each The first encapsulating material 150c and the second encapsulating material 150d are separately formed to surface-activate the first metal film layer 150a and the second metal film layer 150b, respectively. The first encapsulating material 150c and the second encapsulating material 150d may include a metal-like element and a transition metal element. For example, the metal-like element may be a cerium (Si) element, and the transition metal element is exemplified by iron (Fe). , chromium (Cr) element.

As shown in FIG. 4M, the first substrate 110 and the second substrate 120 may be disposed in a vacuum environment, and apply a proper pressure P for a suitable period of time for the first type of metal film layer 150a, the second type. A metal film layer 150b, a package having a metal-like and over-plated metal bond, such as a Si-Fe bonded package, is formed between the first encapsulation material 150c and the second encapsulation material 150d. The air pressure of the aforementioned vacuum environment may be, for example, but not limited to, at most 10 ^-4 Pa (Newtons per square meter), and a suitable pressure P may be, for example, but not limited to, at least 840 Newtons per square inch. The appropriate time can be, for example but not limited to, 100 seconds to 200 seconds. In an embodiment of the present disclosure, the application pressure P is at least 5,000 Newtons per 6 square inches and the pressure duration is from 120 seconds to 180 seconds. The relationship between the air pressure, the pressure P and the duration of these parameters can be derived from different embodiments in the present disclosure. It can be seen from the above description that the first encapsulating material 150c and the second encapsulating material 150d may deposit and dope the metalloid and transition metal elements into the first metal film layer 150a and the second metal layer by deposition and doping. The first encapsulation material 150c and the second encapsulation material 150d are located in the first and second types of metal film layers 150a, 150b, and are close to the first and second types after pressing. The first encapsulating material 150c and the second encapsulating material 150d on the surface of the metal film layers 150a, 150b form a bonding layer, so that the package 152 includes at least a portion of the first encapsulating material 150c and at least a portion of the second encapsulating material 150d. The bonding layer 152 after the bonding of the first encapsulating material 150c and the second encapsulating material 150d may be 1 to 1000 nanometers (nm) or 10 to 200 nanometers (nm).

As shown in FIG. 4N, the package 152 is converted from a metalloid layer 150 to a material comprising a transition metal and metalloid bonding structure. Thus, the environmentally sensitive electronic device can include a transition metal and a metalloid-bonded package 152.

Briefly, referring to FIG. 5, FIG. 5 is a schematic flow chart of the method for manufacturing an environmentally sensitive electronic device. The method may include: as shown in step S501, the first type of metal film layer may be disposed on the first substrate; as shown in step S502, the second type of metal film layer may be disposed on the second substrate; As shown in step S503, the first type of metal film layer and the second type of metal film layer are surface-treated with an ion beam source; as shown in step S504, the first package material is ionized with a metal-like source and a metal-like source. Depositing and doping with the second encapsulation material onto the first metal film layer and the second metal film layer; as shown in step S505, disposing the first substrate and the second substrate to make the first encapsulation material and the second The packaging material forms a component to be packaged; As shown in step S506, the component to be packaged can be placed in a vacuum environment, and the appropriate pressure and time are applied to bond the transition metal and the metalloid to the first metal film layer and the second metal film. Between the layers.

Briefly, the package of the environmentally sensitive electronic device of the embodiment may be disposed between the first substrate and the second substrate, surrounding the environmentally sensitive electronic component, and may be bonded to a metal-like element by a transition metal. . Therefore, the environmentally sensitive electronic device can be sealed well without gaps, and as a result, the life of environmentally sensitive electronic components and environmentally sensitive electronic devices can be improved.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

10a‧‧‧Environmentally sensitive electronic devices

110‧‧‧First substrate

115‧‧‧ wire

120‧‧‧second substrate

130‧‧‧Environmentally sensitive electronic components

132‧‧‧Environmentally sensitive media

134‧‧‧Active components

140‧‧‧Filling body

152‧‧‧Package

Claims (51)

An environmentally sensitive electronic device includes: a first substrate, at least a portion of the periphery of the first substrate is defined as a first package region, wherein the first package region surrounds the environmentally sensitive electronic component, and the first package region Having a first encapsulating material; an environmentally sensitive electronic component on the first substrate, the first encapsulation area surrounding the environmentally sensitive electronic component; and a second substrate, at least a portion of the periphery of the second substrate is defined as a a second encapsulation area, wherein the second encapsulation area surrounds the environmentally sensitive electronic component, and the location of the second encapsulation area corresponds to the location of the first encapsulation area, and the second encapsulation area has a second encapsulation material therein; And a package between the first package region and the second package region, and the package includes at least a portion of the first package material and at least a portion of the bond layer of the second package material. The environmentally sensitive electronic device of claim 1, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of ruthenium, iron, chromium, oxygen, nitrogen, carbon and hydrogen. At least one element. The environmentally sensitive electronic device of claim 1, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of metalloids and transition metal elements. The environmentally sensitive electronic device of claim 1, wherein the package has a thickness of between about 1 nanometer and 1000 nanometers. The environmentally sensitive electronic device of claim 1, wherein the first substrate further has a first type of metal film layer, the first encapsulating material is located on the first type of metal film layer, and the second substrate further has A second type of metal film layer is disposed on the second type of metal film layer. The environmentally sensitive electronic device of claim 5, further comprising a filler between the first substrate and the second substrate, and the filler is surrounded by the package. The environmentally sensitive electronic device of claim 5, wherein the first type of metal film layer and the second type of metal film layer comprise at least one layer of a film of a first type of metal material. The environmentally sensitive electronic device of claim 7, wherein the first type of metal material is selected from the group consisting of boron, boride, lanthanum, cerium, lanthanum, cerium, arsenic, arsenide, selenium, selenide, lanthanum At least one of the group consisting of ruthenium, osmium, and ruthenium. The environmentally sensitive electronic device of claim 7, wherein the first encapsulation material is deposited and doped on a portion of the first type of metal film layer, and the second encapsulation material is deposited and doped in a portion of the second On the metal-like film layer. The environmentally sensitive electronic device of claim 5, wherein the thickness of the first type of metal film layer and the thickness of the second type of metal film layer are each from 0.01 micrometers to 100 micrometers. An environmentally sensitive electronic device comprising: a first substrate, at least a portion of a circumference of the first substrate is defined as a a first package area, wherein the first package area surrounds the environmentally sensitive electronic component, and the first package area has a first package material; an environmentally sensitive electronic component is located on the first substrate, the first package Surrounding the environmentally sensitive electronic component; a second substrate, at least a portion of the periphery of the second substrate is defined as a second package region, wherein the second package region surrounds the environmentally sensitive electronic component, and the second package region a position corresponding to the first package area, and a second package material in the second package area; a first sidewall barrier structure on the second substrate and located in the first package area and the second Between the package regions and surrounding the environmentally sensitive electronic component; and a package disposed between the first sidewall barrier structure and the first substrate and including at least a portion of the first package material and at least a portion The bonding layer of the second encapsulating material. The environmentally sensitive electronic device of claim 11, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of ruthenium, iron, chromium, oxygen, nitrogen, carbon and hydrogen. At least one element. The environmentally sensitive electronic device of claim 11, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of a metalloid and a transition metal element. The environmentally sensitive electronic device of claim 11, wherein the package has a thickness of between about 1 nanometer and 1000 nanometers. The environmentally sensitive electronic device of claim 11, wherein the first substrate further has a first type of metal film layer on the first type of metal film layer, the first sidewall barrier structure The surface further has a second type of metal film layer on the second type of metal film layer. The environmentally sensitive electronic device of claim 15 further comprising a filler between the first substrate and the second substrate, and the filler body is surrounded by the first sidewall barrier structure. The environmentally sensitive electronic device of claim 15, wherein the first type of metal film layer and the second type of metal film layer are a single layer or a plurality of layers of a first type of metal material film. The environmentally sensitive electronic device of claim 17, wherein the first type of metal material is selected from the group consisting of boron, boride, lanthanum, telluride, lanthanum, cerium, arsenic, arsenide, selenium, selenide, bismuth At least one of the group consisting of ruthenium, osmium, and ruthenium. The environmentally sensitive electronic device of claim 17, wherein the first encapsulation material is deposited and doped on a portion of the first type of metal film layer, and the second encapsulation material is deposited and doped in a portion of the second On the metal-like film layer. The environmentally sensitive electronic device of claim 15, wherein the thickness of the first type of metal film layer and the thickness of the second type of metal film layer are each from 0.01 micrometers to 100 micrometers. The environmentally sensitive electronic device of claim 11, wherein a top end of the first sidewall barrier structure is a plane, and the package is located on the plane and the Between the first substrates. The environmentally sensitive electronic device of claim 11, comprising two first sidewall barrier structures, the first sidewall barrier structures being located on the first substrate and located in the first package region and the second package region The environmentally sensitive electronic components are surrounded and concentrically surrounded. An environmentally sensitive electronic device includes: a first substrate, at least a portion of the periphery of the first substrate is defined as a first package region, wherein the first package region surrounds the environmentally sensitive electronic component, and the first package region Having a first encapsulating material; an environmentally sensitive electronic component on the first substrate, the first encapsulation area surrounding the environmentally sensitive electronic component; and a second substrate, at least a portion of the periphery of the second substrate is defined as a a second encapsulation area, wherein the second encapsulation area surrounds the environmentally sensitive electronic component, and the position of the second encapsulation area corresponds to a position of the first encapsulation area, and the second encapsulation area has a second encapsulation material a plurality of second sidewall barrier structures are disposed on the second substrate and located between the first package region and the second package region, wherein the first sidewall barrier structure is surrounded by the second sidewall barrier structures The environmentally sensitive electronic component; and a package, the package is located between the first sidewall barrier structure and the first substrate, and includes at least a portion of the first package material and at least a portion The bonding layer of the second packaging material. The environmentally sensitive electronic device of claim 23, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of ruthenium, iron, chromium, oxygen, nitrogen, carbon, and hydrogen. At least one element. The environmentally sensitive electronic device of claim 23, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of metalloids and transition metal elements. The environmentally sensitive electronic device of claim 23, wherein the package has a thickness of between about 1 nanometer and 1000 nanometers. The environmentally sensitive electronic device of claim 23, wherein the first substrate further has a first type of metal film layer on the first type of metal film layer, the first sidewall barrier structure And the surface of the second sidewall barrier structure further has a second metal film layer on the second metal film layer. The environmentally sensitive electronic device of claim 27, further comprising a filler body between the first substrate and the second substrate, and the filler body is blocked by the first sidewall barrier structure and the second sidewall spacers Surrounded by barrier structures. The environmentally sensitive electronic device of claim 27, wherein the first type of metal film layer and the second type of metal film layer are a single layer or a plurality of layers of a first type of metal material film. The environmentally sensitive electronic device of claim 29, wherein the first type of metal material is selected from the group consisting of boron, boride, lanthanum, telluride, cerium, lanthanum, arsenic, arsenide, selenium, selenide, lanthanum , telluride, antimony, and telluride Form at least one of the groups. The environmentally sensitive electronic device of claim 29, wherein the first encapsulation material is deposited and doped on a portion of the first type of metal film layer, and the second encapsulation material is deposited and doped to a portion of the second On the metal-like film layer. The environmentally sensitive electronic device of claim 27, wherein the thickness of the first type of metal film layer and the thickness of the second type of metal film layer are each from 0.01 micrometers to 100 micrometers. The environmentally sensitive electronic device of claim 23, wherein a top end of the first sidewall barrier structure is a plane, and the package is located between the plane and the first substrate. The environmentally sensitive electronic device of claim 23, wherein the second sidewall barrier structures are located on a first side of the second package region and a corresponding second side, and the first substrate and the second substrate It is a flexible substrate. A method for fabricating an environmentally sensitive electronic device includes: arranging an environmentally sensitive electronic component on a first surface of a first substrate, the first substrate having a first package region; and configuring a first surface of the first substrate a second type of metal film layer; a second type of metal film layer disposed on a second surface of the second substrate, the second substrate has a second package region; and the second substrate is over the first substrate Having the first surface opposite the metal film layer of the second surface; at the surface of the first metal film layer and the second metal film layer Depositing and doping the first encapsulating material over the first type of metal film layer and the second encapsulating material over the second type of metal film layer; and applying pressure to the first substrate and the second substrate, a first encapsulation region of the first surface and a second encapsulation region of the second surface are in contact with each other, and the first encapsulation material on the first type of metal film layer and the first encapsulation material on the second metal film layer A package having a metal-like and transition metal bond is formed between them. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of ruthenium, iron, chromium, oxygen, nitrogen, carbon, and hydrogen. At least one element in the group. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein the first encapsulating material and the second encapsulating material are each selected from the group consisting of a metalloid and a transition metal element. The method for fabricating an environmentally sensitive electronic device according to claim 35, wherein the first type of metal film layer and the second type of metal film layer are disposed by a chemical vapor deposition (CVD) method, Atomic Layer Deposition (ALD) or Sputter deposition. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein depositing and doping the first type of metal film layer with the first encapsulation material and the second type of metal with the second encapsulation material Film layer sinking After the product is doped and doped, the thickness of the package formed after the pressure bonding is about 1 nm to 1000 nm. The method for fabricating an environmentally sensitive electronic device according to claim 35, further comprising adjusting an ambient air pressure. The method of fabricating an environmentally sensitive electronic device of claim 40, wherein the ambient air pressure is adjusted such that the ambient air pressure is less than 10 ^-4 Newtons per square meter. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein a pressure is applied to the first substrate and the second substrate to receive an area of the first package area in contact with the second package area. Contact pressure is greater than 5000 Newtons / 6 square feet. The method of fabricating an environmentally sensitive electronic device of claim 35, wherein applying pressure to the first substrate and the second substrate lasts for 60-300 seconds. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein when a pressure is applied to the first substrate and the second substrate, a first package region of the first substrate and a second substrate are The second package region applies pressure to form the package between the first package region and the second package region. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein the deposition method is a sputtering method. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein the doping method is an ion beam source doping method. The method for fabricating an environmentally sensitive electronic device as claimed in claim 35, further comprising The at least one circuit and the wire are disposed on the first surface. The method for fabricating an environmentally sensitive electronic device according to claim 47, further comprising providing a planarization layer on the first surface, the planarization layer covering the at least one circuit and the wire. The method of fabricating an environmentally sensitive electronic device according to claim 48, wherein the flat layer is fabricated by using yellow light, lithography, or etching. The method of fabricating an environmentally sensitive electronic device of claim 48, wherein the planar layer has an average surface roughness of less than 50 nanometers. The method of fabricating an environmentally sensitive electronic device according to claim 35, wherein the first type of metal film layer is surface-activated with ions of the first encapsulating material and the second type of material is ionized for the second type After the metal film layer is deposited and doped, a gap between the first package region and the second package region is less than 100 micrometers.