TW201434899A - Substrate wettability-promoting composition, polishing composition containing same, and method for producing substrates using same - Google Patents

Substrate wettability-promoting composition, polishing composition containing same, and method for producing substrates using same Download PDF

Info

Publication number
TW201434899A
TW201434899A TW102145882A TW102145882A TW201434899A TW 201434899 A TW201434899 A TW 201434899A TW 102145882 A TW102145882 A TW 102145882A TW 102145882 A TW102145882 A TW 102145882A TW 201434899 A TW201434899 A TW 201434899A
Authority
TW
Taiwan
Prior art keywords
acid
substrate
cellulose derivative
composition
mass
Prior art date
Application number
TW102145882A
Other languages
Chinese (zh)
Inventor
Kayoko Nagahara
Kazuyuki Hirano
Katsunobu Hori
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW201434899A publication Critical patent/TW201434899A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided is a high-quality substrate wettability-promoting composition that is free of or almost free of impurities. The present invention contains a hydrophilic component composed mainly of a cellulose derivative, and a solvent component. Impurities derived from producing the cellulose derivative are equal to or less than 0.1 mass%.

Description

促進基板濕潤性組成物、以及含此之研磨用組成物及使用此之基板的製造方法 Promoting substrate wettability composition, polishing composition containing the same, and manufacturing method using the same

本發明係關於促進基板濕潤性組成物、以及含此之研磨用組成物及使用此之基板的製造方法。 The present invention relates to a substrate-wetting composition, a polishing composition containing the same, and a method for producing a substrate using the same.

高分子化合物由於具有低分子化合物所沒有的力學特性或熱的特性等各種特性,故已利用於廣泛領域中。 Since the polymer compound has various properties such as mechanical properties and thermal properties which are not possessed by the low molecular compound, it has been used in a wide range of fields.

例如,使纖維素衍生物等之具有特定構造之高分子化合物溶解於水中時,表面張力降低,故顯示優異之濕潤性。含有具有該濕潤性之高分子化合物的水溶液已利用於例如研磨或焊接等用途中。 For example, when a polymer compound having a specific structure such as a cellulose derivative is dissolved in water, the surface tension is lowered, so that excellent wettability is exhibited. An aqueous solution containing a polymer compound having such wettability has been used in applications such as polishing or welding.

例如,日本特開2011-97050號公報中記載有特徵係包含具有特定構造之二胺化合物(研磨助劑)、具有聚烷二醇構造之化合物、與水溶性高分子化合物之研磨組成物。依據日本特開2011-97050號公報,記載藉由與前述研磨助劑一起併用水溶性高分子(以及具有聚烷二醇構造之化合物),而提高濕潤性(親水化)。而且,日本特開2011-97050號公報中記載於矽晶圓之研磨處理中使用具有 高濕潤性之前述研磨組成物。又,作為前述水溶性高分子列舉為水溶性多醣類,具體為羥基甲基纖維素、羥基乙基纖維素(HEC)等。 For example, Japanese Laid-Open Patent Publication No. 2011-97050 discloses a polishing composition comprising a diamine compound (grinding aid) having a specific structure, a compound having a polyalkylene glycol structure, and a water-soluble polymer compound. According to Japanese Laid-Open Patent Publication No. 2011-97050, it is described that wettability (hydrophilization) is improved by using a water-soluble polymer (and a compound having a polyalkylene glycol structure) in combination with the above-mentioned polishing aid. Further, Japanese Laid-Open Patent Publication No. 2011-97050 discloses that it is used in the polishing process of a silicon wafer. The aforementioned abrasive composition of high wettability. Further, the water-soluble polymer is exemplified by water-soluble polysaccharides, specifically hydroxymethylcellulose, hydroxyethylcellulose (HEC), and the like.

如上述,含有高分子化合物之水溶液顯示優異之濕潤性。然而,日本特開2011-97050號公報中,已判知作為高分子化合物所列舉之羥基甲基纖維素、羥基乙基纖維素(HEC)等之纖維素衍生物的水溶液會有雜質較多、無法獲得高品質水溶液之情況。此外,已判知特別是將含較多雜質之纖維素衍生物之水溶液使用於基板的研磨時,會有使經研磨之基板的性能下降之情況。 As described above, the aqueous solution containing the polymer compound exhibits excellent wettability. However, in Japanese Laid-Open Patent Publication No. 2011-97050, it is known that an aqueous solution of a cellulose derivative such as hydroxymethylcellulose or hydroxyethylcellulose (HEC) as a polymer compound has a large amount of impurities. Unable to obtain a high quality aqueous solution. Further, it has been found that, in particular, when an aqueous solution of a cellulose derivative containing a large amount of impurities is used for polishing a substrate, the performance of the substrate to be polished may be deteriorated.

因此,本發明之目的係提供一種無或幾乎無雜質之高品質促進基板濕潤性組成物。且,本發明之較佳形態中,目的係提供一種基板之研磨中使用之防止或降低經研磨基板之缺陷之手段。 Accordingly, it is an object of the present invention to provide a high quality substrate-wetting composition which is free or substantially free of impurities. Further, in a preferred embodiment of the present invention, it is an object of the present invention to provide a means for preventing or reducing defects of a substrate to be polished for use in polishing a substrate.

本發明人等進行積極研究。結果,發現藉由使源自製造步驟之纖維素衍生物中所含之雜質的含量成為一定值以下,可解決上述課題,因而完成本發明。 The present inventors conducted active research. As a result, it has been found that the above problems can be solved by setting the content of the impurities contained in the cellulose derivative derived from the production step to a certain value or less, and thus the present invention has been completed.

亦即,本發明係關於一種促進基板濕潤性組成物,其包含以纖維素衍生物作為主成分之親水性成分、與溶劑成分。此時,特徵為源自前述纖維素衍生物之製造的雜質為0.1質量%以下。 That is, the present invention relates to a substrate-wetting composition comprising a hydrophilic component having a cellulose derivative as a main component and a solvent component. In this case, the impurity derived from the production of the cellulose derivative is 0.1% by mass or less.

且,本發明係關於一種研磨用組成物,其包含以纖維 素衍生物作為主成分之親水性成分、二氧化矽粒子、鹼性化合物、與溶劑成分,且雜質為0.1質量%以下。 Moreover, the present invention relates to a polishing composition comprising fibers The pigment derivative is a hydrophilic component as a main component, a ceria particle, a basic compound, and a solvent component, and the impurity is 0.1% by mass or less.

以下,針對用以實施本發明之形態加以詳細說明。 Hereinafter, the form for carrying out the invention will be described in detail.

〈促進基板濕潤性組成物〉 <Promoting substrate wettability composition>

依據本發明之一形態,係提供一種包含以纖維素衍生物作為主成分之親水性成分、與溶劑成分之促進基板濕潤性組成物(以下亦簡稱為「組成物」)。此時,特徵係源自前述纖維素衍生物之製造的雜質為0.1質量%以下。依據需要亦可進而含有習知添加劑。 According to one aspect of the present invention, there is provided a substrate-inducing composition (hereinafter also simply referred to as "composition") comprising a hydrophilic component containing a cellulose derivative as a main component and a solvent component. In this case, the impurity derived from the production of the cellulose derivative is 0.1% by mass or less. It may further contain a conventional additive as needed.

依據本發明,可提供一種無或幾乎無雜質之高品質促進基板濕潤性組成物。 According to the present invention, it is possible to provide a high-quality substrate-wetting composition which is free from or almost free from impurities.

依據本發明之特佳形態,可提供一種防止或降低經研磨之基板的缺陷之促進基板濕潤性之組成物。 According to a particularly preferred embodiment of the present invention, a composition for preventing wettability of a substrate which prevents or reduces defects of the substrate to be polished can be provided.

又,本說明書中,所謂「基板」係指藉本形態之組成物而促進濕潤性者。該基板係依據前述組成物之用途而不同。例如,組成物使用於研磨時,作為前述基板列舉為形成有氧化矽膜、氮化矽膜等之無機絕緣膜的基板、形成有多晶矽膜之基板、及矽單晶基板(矽晶圓)等。該等中,前述基板較好為矽晶圓。 In addition, in this specification, "substrate" means the one which promotes wettability by the composition of this form. The substrate differs depending on the use of the above composition. For example, when the composition is used for polishing, the substrate is exemplified by a substrate on which an inorganic insulating film such as a hafnium oxide film or a tantalum nitride film is formed, a substrate on which a polycrystalline germanium film is formed, and a germanium single crystal substrate (tantalum wafer). . In these, the substrate is preferably a germanium wafer.

〔親水性成分〕 [hydrophilic component]

親水性成分係以纖維素衍生物為主成分。該親水性成分中亦可含其他習知之親水性化合物。此時,前述親水性成分包含源自纖維素衍生物之製造的雜質。又,本說明書中,所謂「主成分」意指相對於親水性成分之總質量較好為50質量%以上,更好為60質量%以上,又更好為70質量%。又,上限為100質量%,但亦可為99質量%以下。 The hydrophilic component is mainly composed of a cellulose derivative. The hydrophilic component may also contain other conventional hydrophilic compounds. At this time, the aforementioned hydrophilic component contains impurities derived from the production of the cellulose derivative. In the present specification, the term "main component" means that the total mass of the hydrophilic component is preferably 50% by mass or more, more preferably 60% by mass or more, and still more preferably 70% by mass. Further, the upper limit is 100% by mass, but may be 99% by mass or less.

親水性成分之含量相對於促進基板濕潤性組成物之總量較好為0.02質量%以上,更好為0.05質量%以上,又更好為0.1質量%以上。又,親水性成分之含量相對於促進基板濕潤性組成物之總量,較好為10質量%以下,更好為5質量%以下,又更好為3質量%以下。親水性成分之含量處於上述範圍時,由於促進基板濕潤性組成物展現優異之濕潤性故較佳。 The content of the hydrophilic component is preferably 0.02% by mass or more, more preferably 0.05% by mass or more, and still more preferably 0.1% by mass or more based on the total amount of the substrate wettability-promoting composition. In addition, the content of the hydrophilic component is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 3% by mass or less based on the total amount of the substrate wettability-promoting composition. When the content of the hydrophilic component is in the above range, it is preferred because the substrate wettability promoting composition exhibits excellent wettability.

(纖維素衍生物) (cellulose derivative)

所謂纖維素衍生物意指以取代基取代不溶於水之纖維素的羥基之至少一個而成為水溶性之纖維素之衍生物。 The cellulose derivative means a derivative of cellulose which becomes water-soluble by replacing at least one of the hydroxyl groups of the water-insoluble cellulose with a substituent.

所謂纖維素係藉由糖苷(glycoside)鍵結使多數之β-葡萄糖分子聚合成直鏈狀者,纖維素之構成單位於C2位、C3位及C6位具有羥基。前述羥基由於於分子間形成強固之氫鍵,故一般纖維素不溶於水或有機溶劑中。然而,藉由以取代基取代纖維素之羥基之至少一部分,切斷上述氫鍵之至少一部分,而使纖維素衍生物顯示水溶性。 The cellulose is a polymer obtained by polymerizing a plurality of β-glucose molecules into a linear chain by glycoside bonding, and the constituent units of cellulose have hydroxyl groups at the C2, C3 and C6 positions. Since the aforementioned hydroxyl group forms a strong hydrogen bond between molecules, cellulose is generally insoluble in water or an organic solvent. However, by replacing at least a part of the hydrogen bond with at least a part of the hydroxyl group of the cellulose with a substituent, the cellulose derivative exhibits water solubility.

作為前述取代基並無特別限制,但可列舉為甲基、乙 基、羥基甲基、羥基乙基、羥基丙基、羧基甲基、羧基乙基等。纖維素具有複數個取代基時,各取代基可為相同者,亦可為不同者。 The substituent is not particularly limited, but may be exemplified by methyl or ethyl. Base, hydroxymethyl, hydroxyethyl, hydroxypropyl, carboxymethyl, carboxyethyl, and the like. When the cellulose has a plurality of substituents, the substituents may be the same or different.

作為具體之纖維素衍生物之例,列舉為羥基甲基纖維素、羥基乙基纖維素(HEC)、羥基丙基纖維素、羥基乙基甲基纖維素、羥基丙基甲基纖維素、甲基纖維素、乙基纖維素、乙基羥基乙基纖維素、羧基甲基纖維素等。該等中,就賦予濕潤性之作用的觀點而言,纖維素衍生物較好為羥基乙基纖維素(HEC)。該等纖維素衍生物可單獨使用,亦可組合2種以上使用。 Examples of specific cellulose derivatives are hydroxymethylcellulose, hydroxyethylcellulose (HEC), hydroxypropylcellulose, hydroxyethylmethylcellulose, hydroxypropylmethylcellulose, and A. Cellulose, ethyl cellulose, ethyl hydroxyethyl cellulose, carboxymethyl cellulose, and the like. Among these, the cellulose derivative is preferably hydroxyethyl cellulose (HEC) from the viewpoint of imparting a wettability effect. These cellulose derivatives may be used singly or in combination of two or more.

纖維素衍生物之重量平均分子量(聚環氧乙烷換算)較好為1,000以上,更好為10,000以上,又更好為100,000以上。纖維素衍生物之重量平均分子量為1,000以上時,在例如研磨用途中,由於提高了經研磨面之親水性故較佳。 The weight average molecular weight (in terms of polyethylene oxide) of the cellulose derivative is preferably 1,000 or more, more preferably 10,000 or more, still more preferably 100,000 or more. When the weight average molecular weight of the cellulose derivative is 1,000 or more, it is preferably used for polishing, for example, because the hydrophilicity of the polished surface is improved.

且,纖維素衍生物之重量平均分子量(聚環氧乙烷換算)較好為2,000,000以下,更好為1,500,000以下,又更好為1,000,000以下,特佳為500,000以下,又最好為300,000以下。纖維素衍生物之重量平均分子量為2,000,000以下時,在例如研磨用途中,添加二氧化矽粒子等時獲得高的分散安定性故較佳。 Further, the weight average molecular weight (in terms of polyethylene oxide) of the cellulose derivative is preferably 2,000,000 or less, more preferably 1,500,000 or less, still more preferably 1,000,000 or less, particularly preferably 500,000 or less, and still more preferably 300,000 or less. When the weight average molecular weight of the cellulose derivative is 2,000,000 or less, it is preferable to obtain high dispersion stability when adding cerium oxide particles or the like, for example, in polishing applications.

上述纖維素衍生物可為自行製造,亦可使用市售品,但就成本之觀點而言以使用市售品較佳。該市售品列舉為AL-15、AL-15F、AH-25、SV-25F、CF-G、CF-V(住友精 化股份有限公司製)、SP200、SP400、EP850、SE400、SE600、EE820(Daicel精密化學股份有限公司製)、K100、PremiumLV、E4M、Premium(陶氏化學公司製)等。市售品之纖維素衍生物通常為工業上所製造者,一般係經過準備纖維素之步驟、將纖維素轉化成纖維素衍生物之步驟而製造。 The above cellulose derivative may be produced by itself or a commercially available product, but it is preferable to use a commercially available product from the viewpoint of cost. The commercial products are listed as AL-15, AL-15F, AH-25, SV-25F, CF-G, CF-V (Sumitomo Chemical Co., Ltd.), SP200, SP400, EP850, SE400, SE600, EE820 (made by Daicel Precision Chemical Co., Ltd.), K100, PremiumLV, E4M, Premium (made by Dow Chemical Co., Ltd.). Commercially available cellulose derivatives are generally manufactured in the industry and are generally produced by the steps of preparing cellulose and converting cellulose to cellulose derivatives.

至於前述準備纖維素之步驟包含自木材、麥梗、甘蔗、廢紙、木棉等之自然原料獲得纖維素。更詳言之,係自木材、麥梗、甘蔗、廢紙等,利用物理及/或化學之作用調製紙漿,且由此獲得纖維素之方法;自木棉獲得纖維素之方法等。 As described above, the step of preparing cellulose comprises obtaining cellulose from natural raw materials such as wood, wheat stem, sugar cane, waste paper, kapok and the like. More specifically, it is a method of modulating pulp by physical and/or chemical action from wood, wheat stem, sugar cane, waste paper, etc., and thereby obtaining cellulose; a method of obtaining cellulose from kapok.

至於將前述纖維素轉化成纖維素衍生物之步驟包含使上述準備之纖維素經化學反應。藉此,可製造纖維素衍生物。前述轉化方法可使用適當之習知方法。例如,可藉以下方法將纖維素轉化成纖維素衍生物。亦即,可使纖維素懸浮於水中,添加鹼,作成鹼纖維素(鹼處理),接著,將試藥添加於纖維素中,獲得纖維素衍生物。 The step of converting the aforementioned cellulose into a cellulose derivative comprises subjecting the above-prepared cellulose to a chemical reaction. Thereby, a cellulose derivative can be produced. The aforementioned transformation method can use a suitable conventional method. For example, cellulose can be converted to a cellulose derivative by the following method. That is, the cellulose can be suspended in water, a base is added, and alkali cellulose (alkali treatment) is added, and then the reagent is added to the cellulose to obtain a cellulose derivative.

此時,作為前述鹼係可使用氫氧化鈉或氫氧化鉀等習知之鹼。 In this case, a conventional base such as sodium hydroxide or potassium hydroxide can be used as the base.

且,前述試藥係使用能獲得期望之纖維素衍生物之試藥。例如,製造羥基乙基纖維素(HEC)時,使用氧化乙烯等作為試藥。另外,製造乙酸纖維素時,係使用乙酸酐等作為試藥。此外,亦可使用促進反應之觸媒等作為前述試藥。 Further, the above reagents used a reagent which can obtain a desired cellulose derivative. For example, when producing hydroxyethyl cellulose (HEC), ethylene oxide or the like is used as a reagent. Further, in the case of producing cellulose acetate, acetic anhydride or the like is used as a reagent. Further, a catalyst for promoting the reaction or the like may be used as the above reagent.

藉由適當變更鹼或試藥之種類‧量、反應溫度、反應時間等,可控制纖維素衍生物之取代度或重量平均分子量等。 The degree of substitution or the weight average molecular weight of the cellulose derivative can be controlled by appropriately changing the type of the base or the reagent, the reaction temperature, the reaction time, and the like.

又,使利用化學反應獲得之纖維素衍生物適當地進行利用磷酸或硝酸等酸之中和、純化、乾燥、造粒等。 Further, the cellulose derivative obtained by the chemical reaction is appropriately subjected to neutralization, purification, drying, granulation, or the like using an acid such as phosphoric acid or nitric acid.

藉由以上述方法製造纖維素衍生物,可製造大量的纖維素衍生物,故就成本之觀點而言係為有利。因此,上述纖維素衍生物較好為使源自自然原料之材料經鹼處理獲得之纖維素衍生物,更好為使綿或紙漿經鹼處理獲得之纖維素衍生物。 By producing a cellulose derivative by the above method, a large amount of cellulose derivative can be produced, which is advantageous from the viewpoint of cost. Therefore, the above cellulose derivative is preferably a cellulose derivative obtained by subjecting a material derived from a natural raw material to alkali treatment, and more preferably a cellulose derivative obtained by subjecting cotton or pulp to alkali treatment.

(習知之親水性化合物) (known hydrophilic compounds)

上述習知之親水性化合物只要是纖維素衍生物以外者即無特別限制,但可列舉為聚(N-醯基伸烷基亞胺)等之亞胺衍生物;聚乙烯醇;改質(陽離子改質、陰離子改質、或非離子改質)聚乙烯醇;聚乙烯吡咯啶酮;聚乙烯己內醯胺;聚氧伸乙基等之聚氧伸烷基等;以及包含該等構成單位之共聚物。又,上述親水性化合物為共聚物時之共聚物形態可為嵌段共聚物、無規共聚物、接枝共聚物、交互共聚物之任一種。該等習知之親水性化合物可單獨使用,亦可混合2種以上使用。 The above-mentioned hydrophilic compound is not particularly limited as long as it is a cellulose derivative, and examples thereof include an imine derivative such as poly(N-fluorenylalkyleneimine); polyvinyl alcohol; and modification (cation modification) Phenolic, anionically modified, or nonionic modified) polyvinyl alcohol; polyvinylpyrrolidone; polyethylene caprolactam; polyoxyalkylene groups such as polyoxyethylene; and the like Copolymer. Further, the copolymer form when the hydrophilic compound is a copolymer may be any of a block copolymer, a random copolymer, a graft copolymer, and an interactive copolymer. These conventional hydrophilic compounds may be used singly or in combination of two or more.

習知之親水性化合物之重量平均分子量(聚環氧乙烷換算)較好為1,000以上,更好為10,000以上,又更好為100,000以上,最好為200,000以上。習知之親水性化合 物之重量平均分子量為1,000以上時,在例如研磨用途中,可提高經研磨之面的親水性故較佳。 The weight average molecular weight (in terms of polyethylene oxide) of the conventional hydrophilic compound is preferably 1,000 or more, more preferably 10,000 or more, still more preferably 100,000 or more, and most preferably 200,000 or more. Hydrophilic combination When the weight average molecular weight of the material is 1,000 or more, for example, in polishing, the hydrophilicity of the surface to be polished can be improved, which is preferable.

且,習知之親水性化合物之重量平均分子量(聚環氧乙烷換算)較好為2,000,000以下,更好為1,500,000以下,又更好為1,000,000以下,最好為500,000以下。習知之親水性化合物之重量平均分子量為2,000,000以下時,在例如研磨用途中,於添加二氧化矽粒子等時獲得了高的分散安定性故較佳。 Further, the weight average molecular weight (in terms of polyethylene oxide) of the conventional hydrophilic compound is preferably 2,000,000 or less, more preferably 1,500,000 or less, still more preferably 1,000,000 or less, and most preferably 500,000 or less. When the weight average molecular weight of the conventional hydrophilic compound is 2,000,000 or less, it is preferable to obtain high dispersion stability when adding cerium oxide particles or the like, for example, in polishing applications.

含習知之親水性化合物時之含量相對於親水性成分之總質量,較好未達50質量%,更好為40質量%以下,又更好為1~30質量%。 The content of the conventional hydrophilic compound is preferably less than 50% by mass, more preferably 40% by mass or less, still more preferably 1 to 30% by mass based on the total mass of the hydrophilic component.

〔溶劑成分〕 [solvent component]

溶劑成分並無特別限制,但就環境面、操作之簡便性等之觀點而言,以水較佳。此時,前述水較好為儘可能不含雜質者。該水較好為以離子交換樹脂去除雜質離子之水、藉過濾器去除雜質之水、藉蒸餾去除異物之水等。該等水列舉為離子交換水、純水、超純水、蒸餾水等。 The solvent component is not particularly limited, but water is preferred from the viewpoints of environmental surface, ease of handling, and the like. At this time, the water is preferably one which is as free from impurities as possible. The water is preferably water which removes impurity ions by an ion exchange resin, water which removes impurities by a filter, water which removes foreign matter by distillation, or the like. These waters are listed as ion-exchanged water, pure water, ultrapure water, distilled water, and the like.

溶劑成分之含量相對於促進基板濕潤性組成物之總量,較好為90質量%以上,更好為95質量%以上,又更好為97質量%以上。此外,溶劑成分之含量相對於促進基板濕潤性組成物之總量,較好為99.98質量%以下,更好為99.95質量%以下,又更好為99.9質量%以下。 The content of the solvent component is preferably 90% by mass or more, more preferably 95% by mass or more, and still more preferably 97% by mass or more based on the total amount of the substrate wettability promoting composition. Further, the content of the solvent component is preferably 99.98 mass% or less, more preferably 99.95% by mass or less, still more preferably 99.9% by mass or less, based on the total amount of the substrate wettability promoting composition.

〔雜質〕 [impurities]

所謂雜質為在纖維素衍生物之製造步驟中含有者。該雜質尤其係在工業上製造纖維素衍生物時所含有。 The impurities are contained in the production step of the cellulose derivative. This impurity is especially contained in the industrial production of cellulose derivatives.

前述雜質並無特別限制,但可列舉為難溶性之無機鹽、凝聚物、其他雜質等。 The impurities are not particularly limited, and examples thereof include inorganic salts, agglomerates, and other impurities which are poorly soluble.

前述難溶性之無機鹽列舉為例如磷酸鋅、磷酸氫鈣、磷酸氫鎂、磷酸鎂、磷酸銨鎂等之磷酸鹽;矽酸鈣、矽酸鎂等之矽酸鹽等。該難溶性之無機鹽通常係起因於在製造纖維素衍生物時之鹼處理步驟或以酸中和之步驟等中添加之試藥、溶劑成分(水等)所含有之離子等者。 The poorly soluble inorganic salt is exemplified by a phosphate such as zinc phosphate, calcium hydrogen phosphate, magnesium hydrogen phosphate, magnesium phosphate or magnesium ammonium phosphate; a citrate such as calcium citrate or magnesium citrate. The poorly soluble inorganic salt is usually caused by a base treatment step in the production of a cellulose derivative, a reagent added in a step of acid neutralization, an ion contained in a solvent component (water or the like), and the like.

前述凝聚物列舉為例如二氧化矽(SiO2)之凝聚物;其他氧化物之凝聚物等。該凝聚物通常為起因於成為纖維素原料之紙漿或綿、製造纖維素衍生物時使用之消泡劑中所含有之二氧化矽、溶劑(水等)中所含有之矽、第2族元素等者,且通常為具有1~200μm左右之平均粒徑者。 The agglomerates are exemplified by, for example, agglomerates of cerium oxide (SiO 2 ); aggregates of other oxides, and the like. The agglomerate is usually a ruthenium or a group 2 element contained in a ruthenium dioxide, a solvent (water, etc.) contained in an antifoaming agent used for producing a cellulose derivative, a pulp or cotton which is used as a cellulose raw material. Or the like, and usually has an average particle diameter of about 1 to 200 μm.

至於前述其他雜質列舉為未反應之纖維素。該未反應之纖維素係起因於將纖維素轉化成纖維素衍生物時未反應之未轉化物者。 As for the other impurities mentioned above, they are listed as unreacted cellulose. The unreacted cellulose is caused by unreacted unconverted material when converting cellulose into a cellulose derivative.

本發明中,特徵係源自纖維素衍生物之製造的雜質為0.1質量%以下。該雜質之含量較好為0.05質量%以下,更好為0.01質量%以下,最好為0.005質量%以下。若雜質之含量為0.1質量%以下,則成為雜質明顯減少之促進基板濕潤性組成物。又,前述雜質之含量為相對於促進基板濕潤性組成物之總量的含量。雜質含量之下限為0質量 %,但亦可為1ppb以上。 In the present invention, the impurity derived from the production of the cellulose derivative is 0.1% by mass or less. The content of the impurities is preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and most preferably 0.005% by mass or less. When the content of the impurities is 0.1% by mass or less, the substrate wettability promoting composition is remarkably reduced. Further, the content of the impurities is a content relative to the total amount of the substrate wettability promoting composition. The lower limit of the impurity content is 0 mass %, but can also be 1 ppb or more.

此外,本發明之一實施形態中,前述雜質包含鎂及鈣之至少一者,前述鎂及鈣之至少一者之含量相對於前述促進基板濕潤性組成物之總量,較好為15ppb以下,更好為10ppb以下,又更好為5ppb以下,前述鎂及鈣係起因於上述之難溶性無機鹽者。因此,鎂及/或鈣之含量有時會見到與前述難溶性之無機鹽之含量有一定相關關係。上述鎂及鈣之至少一者之含量下限為0ppb,但亦可為0.001ppb以上。又,本說明書中,上述所謂「鎂之含量」及「鈣之含量」意指組成物中之鎂元素及鈣元素之含量,且為採用使用將親水性成分之濃度調整為1質量%之組成物,藉由感應耦合高頻電漿分光分析法(ICP-AES)測定之值。 Furthermore, in one embodiment of the present invention, the impurities include at least one of magnesium and calcium, and the content of at least one of the magnesium and the calcium is preferably 15 ppb or less based on the total amount of the substrate-wettable composition. More preferably, it is 10 ppb or less, more preferably 5 ppb or less, and the above-mentioned magnesium and calcium are caused by the above-mentioned poorly soluble inorganic salt. Therefore, the content of magnesium and/or calcium may sometimes be correlated with the content of the above-mentioned poorly soluble inorganic salt. The lower limit of the content of at least one of the above magnesium and calcium is 0 ppb, but may be 0.001 ppb or more. In addition, in the present specification, the content of the "magnesium content" and the "calcium content" means the content of the magnesium element and the calcium element in the composition, and is a composition in which the concentration of the hydrophilic component is adjusted to 1% by mass. The value measured by inductively coupled high frequency plasma spectrometry (ICP-AES).

〈促進基板濕潤性組成物之製造方法〉 <Method for Producing Substrate Wettability Composition>

依據本發明之一實施形態,係提供一種製造含有以纖維素衍生物作為主成分之親水性成分、與溶劑成分之促進基板濕潤性組成物之方法。 According to an embodiment of the present invention, there is provided a method for producing a substrate-wetting composition comprising a hydrophilic component containing a cellulose derivative as a main component and a solvent component.

促進基板濕潤性組成物並無特別限制,可利用習知方法製造。列舉為例如,將親水性成分添加於溶劑成分中並攪拌之方法等。 The substrate wettability promoting composition is not particularly limited and can be produced by a known method. For example, a method in which a hydrophilic component is added to a solvent component and stirred is exemplified.

此時,本形態之促進基板濕潤性組成物中含有之纖維素衍生物中有時含源自製造步驟之雜質。因此,前述製造方法中,較好包含去除或減低該雜質之步驟。藉此,本形 態之促進基板濕潤性組成物中,源自纖維素衍生物之製造的雜質為0.1質量%以下。 In this case, the cellulose derivative contained in the substrate wettability-promoting composition of the present embodiment may contain impurities derived from the production steps. Therefore, in the above production method, the step of removing or reducing the impurities is preferably included. By this, the shape In the substrate-wettable composition, the impurities derived from the production of the cellulose derivative are 0.1% by mass or less.

至於去除或減低前述雜質之步驟只要是可去除或減低源自纖維素衍生物之製造的雜質者即無特別限制,但較好為(A)溶解過濾纖維素衍生物之步驟,(B)將纖維素衍生物分級之步驟,或(C)使纖維素衍生物溶解,且去除前述源自纖維素衍生物之製造的雜質中所含陽離子之步驟。 The step of removing or reducing the aforementioned impurities is not particularly limited as long as it can remove or reduce impurities derived from the production of the cellulose derivative, but is preferably (A) a step of dissolving the filter cellulose derivative, and (B) The step of classifying the cellulose derivative, or (C) the step of dissolving the cellulose derivative and removing the cations contained in the impurities derived from the manufacture of the cellulose derivative.

亦即,較佳之實施形態中,促進基板濕潤性組成物之製造方法較好包含選自由(A)溶解過濾纖維素衍生物之步驟、(B)將纖維素衍生物分級之步驟、及(C)使纖維素衍生物溶解,且去除前述源自纖維素衍生物之製造的雜質中所含陽離子之步驟所組成群中之至少一種步驟。 That is, in a preferred embodiment, the method for producing a substrate wettability composition preferably comprises a step selected from the group consisting of (A) a step of dissolving a filter cellulose derivative, (B) a step of classifying a cellulose derivative, and (C) And at least one of the group consisting of the steps of dissolving the cellulose derivative and removing the cations contained in the impurities derived from the manufacture of the cellulose derivative.

以下依序說明(A)溶解過濾纖維素衍生物之步驟、(B)將纖維素衍生物分級之步驟、(C)去除源自纖維素衍生物之製造的雜質中所含陽離子之步驟。 The steps of dissolving the filtered cellulose derivative, (B) the step of classifying the cellulose derivative, and (C) the step of removing the cation contained in the impurity derived from the production of the cellulose derivative are explained in the following.

〔步驟(A):溶解過濾纖維素衍生物之步驟〕 [Step (A): Step of dissolving and filtering the cellulose derivative]

本步驟係使纖維素衍生物溶解於溶劑中調製纖維素衍生物溶液後,進行過濾之步驟。藉由本步驟,可去除源自纖維素衍生物之製造的雜質,較好可去除凝聚物之至少一部分。 This step is a step in which a cellulose derivative is dissolved in a solvent to prepare a cellulose derivative solution, followed by filtration. By this step, impurities derived from the production of the cellulose derivative can be removed, and at least a part of the aggregate can be preferably removed.

作為前述溶劑只要是可使纖維素衍生物溶解者即無特別限制,但能使用上述之溶劑成分。再者,基於提高纖維 素衍生物之分散安定性,較好於上述溶劑中添加鹼性化合物。 The solvent is not particularly limited as long as it can dissolve the cellulose derivative, but the above solvent component can be used. Furthermore, based on improving fiber It is preferred to add a basic compound to the above solvent in terms of dispersion stability of the derivative.

纖維素衍生物溶液之pH較好超過7,更好為8以上,又更好為10以上。 The pH of the cellulose derivative solution is preferably more than 7, more preferably 8 or more, still more preferably 10 or more.

前述纖維素衍生物溶液中之纖維素衍生物含量較好為0.01質量%以上,更好為0.1質量%以上。纖維素衍生物之含量為0.01質量%以上時,可過濾一定量以上之纖維素衍生物溶液,就生產性之觀點而言較佳。 The content of the cellulose derivative in the cellulose derivative solution is preferably 0.01% by mass or more, more preferably 0.1% by mass or more. When the content of the cellulose derivative is 0.01% by mass or more, a predetermined amount or more of the cellulose derivative solution can be filtered, which is preferable from the viewpoint of productivity.

且,前述纖維素衍生物溶液中之纖維素衍生物之含量較好為10質量%以下,更好為5質量%以下。纖維素衍生物之含量為10質量%以下時,纖維素衍生物溶液之黏度不會過高,可獲得高的過濾速度故較佳。 Further, the content of the cellulose derivative in the cellulose derivative solution is preferably 10% by mass or less, more preferably 5% by mass or less. When the content of the cellulose derivative is 10% by mass or less, the viscosity of the cellulose derivative solution is not excessively high, and a high filtration speed can be obtained, which is preferable.

纖維素衍生物溶液之過濾中使用之材料並無特別限制,但列舉為聚丙烯、聚苯乙烯、聚醚碸、尼龍、纖維素、聚對苯二甲酸乙二酯(PTFE)、聚碳酸酯、玻璃等。 The material used in the filtration of the cellulose derivative solution is not particularly limited, but is exemplified by polypropylene, polystyrene, polyether oxime, nylon, cellulose, polyethylene terephthalate (PTFE), and polycarbonate. , glass, etc.

至於過濾器構造並無特別限制,列舉為深層(depth)構造、打摺式(pleats)構造、薄膜構造等。 The filter structure is not particularly limited, and is exemplified by a depth structure, a pleat structure, a film structure, and the like.

過濾器之孔開度並無特別限制,但較好為0.05μm以上,更好為0.1μm以上,又更好為0.2μm以上。過濾器之孔開度為0.05μm以上時,可獲得高的過濾速度故較佳。 The opening degree of the filter is not particularly limited, but is preferably 0.05 μm or more, more preferably 0.1 μm or more, and still more preferably 0.2 μm or more. When the pore opening degree of the filter is 0.05 μm or more, a high filtration speed can be obtained, which is preferable.

且,作為過濾器之孔開度較好為100μm以下,更好為70μm以下,又更好為50μm以下。過濾器之孔開度為100μm以下時,過濾之精度提高故較佳。 Further, the pore opening degree of the filter is preferably 100 μm or less, more preferably 70 μm or less, and still more preferably 50 μm or less. When the pore opening degree of the filter is 100 μm or less, the precision of filtration is improved, which is preferable.

至於過濾方法可為於常壓進行之自然過濾、抽氣過濾、加壓過濾、離心過濾之任一種。 The filtration method may be any of natural filtration, suction filtration, pressure filtration, and centrifugal filtration at atmospheric pressure.

本步驟可進行2次以上。此時,較好適當變更過濾器之孔開度等條件。列舉為例如,第1次之溶解過濾係使用較大孔開度之過濾器去除粗大粒子,第2次之溶解過濾係使用較窄孔開度之過濾器去除微小粒子之方法等。藉由進行2次以上之溶解過濾,可更有效地去除雜質。 This step can be performed more than 2 times. At this time, it is preferable to appropriately change conditions such as the opening degree of the filter. For example, the first dissolution filtration system uses a filter having a larger pore opening degree to remove coarse particles, and the second dissolution filtration system uses a filter having a narrow pore opening degree to remove fine particles. By performing two or more dissolution filtrations, impurities can be removed more effectively.

〔步驟(B):將纖維素衍生物分級之步驟〕 [Step (B): Step of classifying cellulose derivative]

本步驟係將纖維素衍生物分級之步驟。藉由本步驟,可去除源自纖維素衍生物之製造的雜質,較好為難溶性無機鹽、凝聚物、未反應之纖維素,更好為難溶性之無機鹽、凝聚物之至少一部分。又,本說明書中,所謂「分級」係指自含雜質之纖維素衍生物分離具有一定以上粒徑之雜質。該分級通常使用分級裝置進行。 This step is a step of classifying the cellulose derivative. By this step, impurities derived from the production of the cellulose derivative can be removed, and it is preferably a poorly soluble inorganic salt, an agglomerate, an unreacted cellulose, and more preferably at least a part of a poorly soluble inorganic salt or agglomerate. In the present specification, the term "classifying" means separating impurities having a certain particle diameter or more from a cellulose derivative containing impurities. This classification is usually carried out using a classification device.

至於分級裝置列舉為例如振動過篩機、低架篩網(Low-Head screen)、電磁篩網等過篩分離裝置;微分離機、旋風分離機(cyclone)等乾式分級裝置;傾析器(decanter)型離心分離機、液體鼓風裝置、刮板分級機(drag classifier)等之濕式分級裝置。該等分級裝置亦可適當組合。 The classification device is exemplified by a sieve separation device such as a vibration sifter, a low-mesh screen, an electromagnetic sieve, a dry separation device such as a micro-separator or a cyclone, and a decanter ( A wet classifier such as a decanter type centrifugal separator, a liquid blast device, a drag classifier, or the like. These classifying devices can also be combined as appropriate.

本步驟亦可進行2次以上。此時,較好適當變更過篩機之種類或分級方法等之條件。列舉為例如,第1次分級係使用鼓風機進行分級,第2次分級係使用振動過篩機等 進行分級之方法等。各分級之間亦可進行纖維素衍生物之解碎。藉由進行2次以上之分級,可更有效地去除雜質。 This step can also be performed more than 2 times. In this case, it is preferable to appropriately change the conditions of the type of the sieve machine, the classification method, and the like. For example, the first classification is performed by using a blower, and the second classification is by using a vibration sieve machine. Method of grading, etc. The decomposing of the cellulose derivative can also be carried out between the fractions. By performing classification of more than 2 times, impurities can be removed more effectively.

〔步驟(C):去除源自纖維素衍生物之製造的雜質中所含之陽離子之步驟〕 [Step (C): Step of removing cations contained in impurities derived from the production of cellulose derivatives]

本步驟係將纖維素衍生物溶解於溶劑中調製纖維素衍生物溶液後,去除陽離子之步驟。藉由本步驟,可去除源自纖維素衍生物之製造的雜質,較好為難溶性之無機鹽之至少一部分。 This step is a step of removing the cation after dissolving the cellulose derivative in a solvent to prepare a cellulose derivative solution. By this step, impurities derived from the production of the cellulose derivative can be removed, preferably at least a part of the poorly soluble inorganic salt.

前述溶劑之種類、及纖維素衍生物溶液中之纖維素衍生物之含量由於與溶解過濾纖維素衍生物之步驟相同,故此處省略說明。 The type of the solvent and the content of the cellulose derivative in the cellulose derivative solution are the same as those in the step of dissolving the filtered cellulose derivative, and thus the description thereof will be omitted.

去除陽離子之方法並無特別限制,可利用離子交換法。至於離子交換法列舉為使纖維素衍生物溶液通過填充離子交換樹脂之管柱且分離纖維素衍生物與源自纖維素衍生物製造的雜質之方法。 The method of removing the cation is not particularly limited, and an ion exchange method can be utilized. The ion exchange method is exemplified by a method of passing a cellulose derivative solution through a column packed with an ion exchange resin and separating the cellulose derivative from impurities derived from the cellulose derivative.

至於使用之離子交換樹脂並無特別限制,列舉為強酸性陽離子交換樹脂、弱酸性陽離子交換樹脂等。 The ion exchange resin to be used is not particularly limited, and examples thereof include a strongly acidic cation exchange resin and a weakly acidic cation exchange resin.

前述強酸性陽離子交換樹脂具有之交換基列舉為磺酸基等。 The exchange group which the aforementioned strongly acidic cation exchange resin has is exemplified by a sulfonic acid group or the like.

前述弱酸性陽離子交換樹脂具有之交換基列舉為羧基、酚性羥基等。 The exchange group of the weakly acidic cation exchange resin is exemplified by a carboxyl group, a phenolic hydroxyl group or the like.

離子交換樹脂可使用市售品,該市售品列舉為Diaion(商標)系列(三菱化學股份有限公司製)、Amberlite (商標)、Anberjet(商標)(Organo股份有限公司製)等。 Commercially available products can be used as the ion exchange resin, and the commercial products are listed as Diaion (trademark) series (manufactured by Mitsubishi Chemical Corporation), Amberlite. (trademark), Anberjet (trademark) (made by Organo Co., Ltd.), and the like.

本步驟亦可進行2次以上。此時,較好適當變更纖維素衍生物溶液之pH或離子交換樹脂之種類等之條件。列舉為例如,第1次之離子交換中使用低pH(弱鹼性)之纖維素衍生物,於第2次之離子交換之前進行纖維素衍生物溶液之pH調整,調製高pH(強鹼性)之纖維素衍生物溶液後,進行第2次離子交換之方法等。藉由進行2次以上之離子交換,可更有效地去除雜質。 This step can also be performed more than 2 times. In this case, conditions such as the pH of the cellulose derivative solution or the type of the ion exchange resin are preferably appropriately changed. For example, a low pH (weakly basic) cellulose derivative is used in the first ion exchange, and the pH of the cellulose derivative solution is adjusted before the second ion exchange to prepare a high pH (strong alkaline). After the cellulose derivative solution, the second ion exchange method or the like is performed. By performing ion exchange twice or more, impurities can be removed more effectively.

且,較好與陽離子之去除同時去除陰離子。更好在陽離子去除後去除陰離子。藉由與陽離子去除步驟後之稍存在之殘留陽離子鍵結而去除陰離子,可減低難溶性無機物生成之可能性。 Moreover, it is preferred to remove the anion simultaneously with the removal of the cation. It is better to remove the anions after the cations are removed. The anion can be removed by residual cation bonding which is slightly present after the cation removal step, thereby reducing the possibility of formation of poorly soluble inorganic substances.

去除陰離子所用之離子交換樹脂並無特別限制,列舉為強鹼性陰離子交換樹脂I型、強鹼性陰離子交換樹脂II型、弱鹼性陰離子交換樹脂等。 The ion exchange resin used for removing the anion is not particularly limited, and examples thereof include a strongly basic anion exchange resin type I, a strongly basic anion exchange resin type II, and a weakly basic anion exchange resin.

作為前述強鹼性陰離子交換樹脂I型所具有之交換基列舉為三甲基銨基等。 The exchange group which is the type I of the strongly basic anion exchange resin is exemplified by a trimethylammonium group or the like.

作為前述強鹼性陰離子交換樹脂II型所具有之交換基列舉為二甲基乙醇銨基等。 The exchange group which the above-mentioned strongly basic anion exchange resin type II has is exemplified by a dimethylethanolammonium group or the like.

前述弱鹼性陰離子交換樹脂所具有之交換基列舉為三級胺基等。 The exchange group which the aforementioned weakly basic anion exchange resin has is exemplified by a tertiary amine group or the like.

上述之步驟(A)~(C)可單獨進行,亦可組合2步驟以上進行。此時,組合2步驟以上進行時,可依任何順 序進行。亦即,可以步驟(A)-步驟(B)之順序進行、以步驟(A)-步驟(C)之順序進行、以步驟(A)-步驟(B)-步驟(C)之順序進行、以步驟(A)-步驟(C)-步驟(B)之順序進行、以步驟(B)-步驟(A)-步驟(C)之順序進行。該等中,較好為以步驟(B)-步驟(A)-步驟(C)之順序進行。 The above steps (A) to (C) may be carried out separately or in combination of two or more steps. At this time, when combining two or more steps, you can follow any The order is carried out. That is, it can be carried out in the order of steps (A) - (B), in the order of steps (A) - (C), and in the order of steps (A) - (B) - (C), It is carried out in the order of step (A) - step (C) - step (B), and in the order of step (B) - step (A) - step (C). Among these, it is preferred to carry out the steps (B) to (A) to (C).

且,上述中之各步驟亦可個進行2度以上。因此,可以步驟(A)-步驟(B)-步驟(A)-步驟(C)、步驟(B)-步驟(B)-步驟(A)-步驟(C)、步驟(B)-步驟(B)-步驟(A)-步驟(C)-步驟(C)等多種順序、組合進行。 Further, each of the above steps may be performed at 2 degrees or more. Therefore, step (A) - step (B) - step (A) - step (C), step (B) - step (B) - step (A) - step (C), step (B) - step ( B) - Step (A) - Step (C) - Step (C) and the like are carried out in various orders and combinations.

又,組合上述步驟(A)~(C)之2步驟以上時,各步驟間當然亦可進行習知處理,例如解碎處理、pH調整處理或其他純化處理等。 Further, when two or more steps (A) to (C) are combined, it is a matter of course that conventional treatment such as pulverization treatment, pH adjustment treatment or other purification treatment may be performed between the respective steps.

藉由經過如上述之去除或減低前述雜質之步驟,可獲得源自纖維素衍生物之製造的雜質為0.1質量%以下之組成物。 By the step of removing or reducing the aforementioned impurities as described above, a composition derived from the production of the cellulose derivative can be obtained in an amount of 0.1% by mass or less.

〈研磨用組成物〉 <Polishing composition>

上述之促進基板濕潤性組成物係用於各種用途。例如,使用於研磨、研磨後之清洗、及焊接等用途中。該等中,較好使用於研磨及研磨後之清洗用途中。以下,特別針對研磨用途中使用上述組成物加以詳細說明。 The above-mentioned substrate-wetting composition is used for various purposes. For example, it is used in applications such as polishing, cleaning after polishing, and welding. Among these, it is preferably used in cleaning applications after polishing and polishing. Hereinafter, the above composition will be specifically described for the purpose of polishing.

依據本發明之一實施形態,提供一種含本發明之促 進基板濕潤性組成物之研磨用組成物。依據本實施形態之研磨用組成物,經研磨基板(研磨對象物)具有優異之性能。 According to an embodiment of the present invention, there is provided a method comprising the present invention A polishing composition for entering the substrate wettable composition. According to the polishing composition of the present embodiment, the substrate to be polished (object to be polished) has excellent performance.

過去,含纖維素衍生物,尤其是工業用纖維素衍生物之研磨用組成物根據所用之纖維素衍生物之批次等而有研磨對象物之性能不同之情況。其結果,會有因更換纖維素衍生物之批次而獲得具有不同性能之研磨對象物,結果,尤其對於要求奈米等級之精密性之半導體領域造成重大之影響。 In the past, the polishing composition containing a cellulose derivative, particularly an industrial cellulose derivative, may have different properties depending on the batch of the cellulose derivative to be used. As a result, an object to be polished having different properties can be obtained by replacing a batch of the cellulose derivative, and as a result, it is particularly affected by the field of semiconductors requiring precision of the nanometer level.

詳細檢討上述性能變化之結果,發現於成為低性能之研磨對象物表面發生微小缺陷(Light Point Defects:LPD)。而且,更詳細檢討之結果,判知該LPD之個數隨著纖維素衍生物之批次而不同。 The results of the above-described performance changes were examined in detail, and it was found that Light Point Defects (LPD) occurred on the surface of the object to be polished with low performance. Moreover, as a result of a more detailed review, it was determined that the number of the LPD differs depending on the batch of the cellulose derivative.

本發明人等發現LPD之發生與纖維素衍生物中含有之雜質有相關關係,且發現藉由去除或減低該雜質,可防止或抑制LPD之發生。 The present inventors have found that the occurrence of LPD is related to the impurities contained in the cellulose derivative, and it has been found that the occurrence of LPD can be prevented or suppressed by removing or reducing the impurities.

本形態之研磨用組成物包含上述促進基板濕潤性組成物、二氧化矽粒子、與鹼性化合物。 The polishing composition of the present aspect comprises the above-mentioned substrate-wetting composition, cerium oxide particles, and a basic compound.

更詳細而言,本形態之研磨用組成物包含以纖維素衍生物作為主成分之親水性成分、二氧化矽粒子、鹼性化合物、與溶劑成分。此外,亦可視需要含其他添加劑。此時,前述研磨用組成物中含有雜質(以下亦稱為「研磨用組成物之雜質」)為0.1質量%以下,較好為0.05質量%以下,更好為0.01質量%以下,最好為0.005質量%以 下。又,研磨用組成物之雜質含量之下限為0質量%,但亦可為1ppb以上。又,研磨用組成物之雜質含量係相對於研磨用組成物總量之含量。 More specifically, the polishing composition of the present embodiment contains a hydrophilic component containing a cellulose derivative as a main component, cerium oxide particles, a basic compound, and a solvent component. In addition, other additives may also be included as needed. In this case, the polishing composition contains impurities (hereinafter also referred to as "impurities for polishing composition") of 0.1% by mass or less, preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and most preferably 0.005 mass% under. Further, the lower limit of the impurity content of the polishing composition is 0% by mass, but may be 1 ppb or more. Further, the impurity content of the polishing composition is based on the total amount of the polishing composition.

此外,本發明之一實施形態中,研磨用組成物之雜質含有鎂及鈣之至少一者,前述鎂及鈣之至少一者之含量相對於前述研磨用組成物之總量,較好為10ppb以下,更好為5ppb以下。且,上述鎂及鈣之至少一者之含量下限為0ppb,但亦可為0.001ppb以上。又,研磨用組成物中之鎂含量及鈣含量之測定方法與促進基板濕潤性組成物之情況相同。 Furthermore, in one embodiment of the present invention, the impurity of the polishing composition contains at least one of magnesium and calcium, and the content of at least one of the magnesium and calcium is preferably 10 ppb based on the total amount of the polishing composition. Hereinafter, it is preferably 5 ppb or less. Further, the lower limit of the content of at least one of the above magnesium and calcium is 0 ppb, but may be 0.001 ppb or more. Further, the method for measuring the magnesium content and the calcium content in the polishing composition is the same as in the case of promoting the substrate wettability composition.

研磨用組成物之pH較好為8以上,更好為8.5以上,又更好為9以上。研磨用組成物之pH為8以上時,可提高化學研磨研磨面之功能,且提高二氧化矽粒子等之分散性故較佳。 The pH of the polishing composition is preferably 8 or more, more preferably 8.5 or more, still more preferably 9 or more. When the pH of the polishing composition is 8 or more, the function of the chemical polishing surface can be improved, and the dispersibility of the cerium oxide particles or the like can be improved.

又,研磨用組成物之pH較好為12.5以下,更好為12以下,又更好為11.5以下。研磨用組成物之pH為12.5以下時,可提高研磨面之平滑性故較佳。研磨用組成物之pH可利用後述之鹼性化合物、pH調整劑之調配量等而調整。 Further, the pH of the polishing composition is preferably 12.5 or less, more preferably 12 or less, still more preferably 11.5 or less. When the pH of the polishing composition is 12.5 or less, the smoothness of the polished surface can be improved, which is preferable. The pH of the polishing composition can be adjusted by using a basic compound, a pH adjusting agent, and the like described later.

以下,針對研磨用組成物中所含之各成分加以詳細說明。 Hereinafter, each component contained in the polishing composition will be described in detail.

〔親水性成分〕 [hydrophilic component]

做為親水性成分,由於係使用上述纖維素衍生物或習 知親水性化合物等,故此處省略說明。 As a hydrophilic component, due to the use of the above cellulose derivatives or Since a hydrophilic compound or the like is known, the description thereof is omitted here.

前述基板濕潤性組成物中含有之源自纖維素衍生物之製造的雜質由於為0.1質量%以下,故研磨用組成物之雜質亦成為0.1質量%以下。結果,藉由使用本實施形態之研磨用組成物,可防止或抑制研磨對象物之LPD之發生,且可防止研磨面之異物殘留。 Since the impurities derived from the production of the cellulose derivative contained in the substrate wettable composition are 0.1% by mass or less, the impurities of the polishing composition are also 0.1% by mass or less. As a result, by using the polishing composition of the present embodiment, occurrence of LPD of the object to be polished can be prevented or suppressed, and foreign matter on the polishing surface can be prevented from remaining.

研磨用組成物中之親水性成分之含量相對於研磨用組成物之總量,較好為0.002質量%以上,更好為0.004質量%以上,又更好為0.006質量%以上,最好為0.01質量%以上。研磨用組成物中之親水性成分之含量為0.002質量%以上時,可進一步提高研磨面之濕潤性故較佳。 The content of the hydrophilic component in the polishing composition is preferably 0.002% by mass or more, more preferably 0.004% by mass or more, still more preferably 0.006% by mass or more, and most preferably 0.01% based on the total amount of the polishing composition. More than % by mass. When the content of the hydrophilic component in the polishing composition is 0.002% by mass or more, the wettability of the polished surface can be further improved, which is preferable.

此外,研磨用組成物中之親水性成分之含量相對於研磨用組成物之總量,較好為0.5質量%以下,更好為0.2質量%以下,又更好為0.1質量%以下。研磨用組成物中之親水性成分之含量為0.5質量%以下時,可提高研磨用組成物之分散安定性故較佳。 In addition, the content of the hydrophilic component in the polishing composition is preferably 0.5% by mass or less, more preferably 0.2% by mass or less, and still more preferably 0.1% by mass or less based on the total amount of the polishing composition. When the content of the hydrophilic component in the polishing composition is 0.5% by mass or less, the dispersion stability of the polishing composition can be improved, which is preferable.

〔二氧化矽粒子〕 [cerium oxide particles]

二氧化矽粒子具有機械研磨成為研磨對象的面之功能。 The cerium oxide particles have a function of mechanically grinding the surface to be polished.

至於前述二氧化矽粒子並無特別限制,列舉為膠體二氧化矽、發煙二氧化矽、溶凝膠法二氧化矽等。該等中,二氧化矽粒子在使用矽基板作為基板時就防止或抑制研磨表面發生之刮痕之觀點而言,較好為膠體二氧化矽、發煙 二氧化矽,更好為膠體二氧化矽。又,前述二氧化矽粒子較好不含源自纖維素衍生物之製造的雜質之一的二氧化矽之凝聚物。即使含有亦為0.1質量%以下。該二氧化矽之凝聚物亦如由上述雜質之平均粒徑之記載所明瞭,對比於後述之二氧化矽粒子之平均一次粒徑或平均二次粒徑,具有極大之粒徑。 The cerium oxide particles are not particularly limited, and examples thereof include colloidal cerium oxide, fumed cerium oxide, and sol-gel cerium oxide. In the above, the cerium oxide particles are preferably colloidal cerium oxide or fumes from the viewpoint of preventing or suppressing scratches on the polishing surface when the ruthenium substrate is used as the substrate. Cerium dioxide is better as colloidal cerium oxide. Further, the cerium oxide particles preferably contain no aggregates of cerium oxide derived from one of the impurities produced by the cellulose derivative. Even if it is contained, it is 0.1 mass % or less. The agglomerates of the cerium oxide are also described by the average particle diameter of the above-mentioned impurities, and have an extremely large particle diameter in comparison with the average primary particle diameter or the average secondary particle diameter of the cerium oxide particles described later.

二氧化矽粒子亦可經表面修飾。藉由表面修飾二氧化矽粒子,而具有Zeta電位為比較大的負值,故提高研磨用組成物之分散性,且提高研磨用組成物之保存安定性。 The cerium oxide particles can also be surface modified. Since the zeta potential is relatively large by the surface modification of the cerium oxide particles, the dispersibility of the polishing composition is improved, and the storage stability of the polishing composition is improved.

至於經表面修飾之二氧化矽粒子較好為以有機酸進行表面修飾之二氧化矽粒子(較好為膠體二氧化矽)。此時,前述有機酸並無特別限制,列舉為磺酸、羧酸、磷酸等。 The surface-modified cerium oxide particles are preferably cerium oxide particles (preferably colloidal cerium oxide) which is surface-modified with an organic acid. In this case, the organic acid is not particularly limited, and examples thereof include a sulfonic acid, a carboxylic acid, and a phosphoric acid.

表面修飾二氧化矽之方法並無特別限制,係適宜應用習知方法。例如,以磺酸對膠體二氧化矽進行表面修飾時,可藉由“Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”(Chem.Commun.246-247(2003))中記載之方法進行。具體而言,使3-巰基丙基三甲氧基矽烷等之具有硫醇基之矽烷偶合劑偶合於膠體二氧化矽後,以過氧化氫使硫醇基氧化,可獲得經磺酸表面修飾之膠體二氧化矽。且,對膠體二氧化矽以羧酸進行表面修飾之情況可利用“Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”(Chemistry Latters,3,228-229(2000))所記載之方法進行。具體而言,使含光反應性之2-硝基苄酯之矽烷偶合劑偶合於膠體二氧化矽後,藉由進行照光,可獲得經羧酸表面修飾之膠體二氧化矽。 The method of surface-modifying the cerium oxide is not particularly limited, and a conventional method is suitably applied. For example, when the colloidal ceria is surface-modified with a sulfonic acid, it can be carried out by the method described in "Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups" (Chem. Commun. 246-247 (2003)). Specifically, after coupling a decane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxydecane to a colloidal cerium oxide, the thiol group is oxidized with hydrogen peroxide to obtain a surface modification by a sulfonic acid. Colloidal cerium oxide. Moreover, "Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica" may be utilized for the surface modification of colloidal cerium oxide with a carboxylic acid. Gel" (Chemistry Latters, 3, 228-229 (2000)). Specifically, after coupling a photoreactive 2-nitrobenzyl ester decane coupling agent to colloidal cerium oxide, By illuminating, a colloidal cerium oxide modified by a carboxylic acid surface can be obtained.

該等二氧化矽粒子可單獨使用,亦可組合2種以上使用。 These cerium oxide particles may be used singly or in combination of two or more.

二氧化矽粒子之平均一次粒徑較好為5nm以上,更好為10nm以上,又更好為20nm以上。二氧化矽粒子之平均一次粒徑為5nm以上時,可提高矽基板之研磨速度故較佳。 The average primary particle diameter of the cerium oxide particles is preferably 5 nm or more, more preferably 10 nm or more, and still more preferably 20 nm or more. When the average primary particle diameter of the cerium oxide particles is 5 nm or more, the polishing rate of the ruthenium substrate can be improved, which is preferable.

此外,二氧化矽粒子之平均一次粒徑較好為100nm以下,更好為70nm以下,又更好為50nm以下。二氧化矽粒子之平均一次粒徑為100nm以下時,可提高研磨用組成物之分散安定性故較佳。又,本說明書中,「二氧化矽粒子之平均一次粒徑」之值係採用使用Flow SorbII 2300(Micrometrics公司製),以BET法測定之比表面積之值者。 Further, the average primary particle diameter of the cerium oxide particles is preferably 100 nm or less, more preferably 70 nm or less, still more preferably 50 nm or less. When the average primary particle diameter of the cerium oxide particles is 100 nm or less, the dispersion stability of the polishing composition can be improved, which is preferable. In the present specification, the value of the "average primary particle diameter of the cerium oxide particles" is the value of the specific surface area measured by the BET method using Flow Sorb II 2300 (manufactured by Micrometrics Co., Ltd.).

二氧化矽粒子之平均二次粒徑較好為10nm以上,更好為20nm以上,又更好為30nm以上。二氧化矽粒子之平均二次粒徑為10nm以上時,研磨時可獲得高的研磨速度故較佳。 The average secondary particle diameter of the cerium oxide particles is preferably 10 nm or more, more preferably 20 nm or more, and still more preferably 30 nm or more. When the average secondary particle diameter of the cerium oxide particles is 10 nm or more, a high polishing rate can be obtained at the time of polishing, which is preferable.

此外,二氧化矽粒子之平均二次粒徑較好為200nm以下,更好為150nm以下,又更好為100nm以下。二氧化矽粒子之平均二次粒徑為200nm以下時,可提高研磨 用組成物之分散安定性故較佳。又,本說明書中,「二氧化矽粒子之平均二次粒徑」之值係採用使用FPAR-1000(大塚電子股份有限公司製),藉由動態光散射法測定之值者。 Further, the average secondary particle diameter of the cerium oxide particles is preferably 200 nm or less, more preferably 150 nm or less, still more preferably 100 nm or less. When the average secondary particle diameter of the cerium oxide particles is 200 nm or less, the polishing can be improved. It is preferred to use the dispersion stability of the composition. In the present specification, the value of the "average secondary particle diameter of the cerium oxide particles" is measured by a dynamic light scattering method using FPAR-1000 (manufactured by Otsuka Electronics Co., Ltd.).

二氧化矽粒子之長寬比(長徑/短徑比)之平均值較好為1.0以上,更好為1.05以上,又更好為1.1以上。二氧化矽粒子之長寬比之平均值為1.0以上時,研磨時可獲得高的研磨速度故較佳。 The average value of the aspect ratio (long diameter/short diameter ratio) of the cerium oxide particles is preferably 1.0 or more, more preferably 1.05 or more, still more preferably 1.1 or more. When the average value of the aspect ratio of the cerium oxide particles is 1.0 or more, a high polishing rate can be obtained at the time of polishing, which is preferable.

此外,二氧化矽粒子之長寬比(長徑/短徑比)之平均值較好為3.0以下,更好為2.0以下,又更好為1.5以下。二氧化矽粒子之長寬比之平均值為3.0以下時,可防止或減低研磨面產生之刮痕故較佳。又,本說明書中,「長寬比(長徑/短徑比)之平均值」係採用藉以下方法算出之值者。亦即,使用掃描型電子顯微鏡(SEM)觀察200個粒子,描繪出外接於各個粒子圖像之最小長方形。接著,測定所得長方形之長邊之長(長徑之值)相對於短邊之長(短徑之值),並算出其平均值而求出。 Further, the average value of the aspect ratio (long diameter/short diameter ratio) of the cerium oxide particles is preferably 3.0 or less, more preferably 2.0 or less, still more preferably 1.5 or less. When the average value of the aspect ratio of the cerium oxide particles is 3.0 or less, it is preferable to prevent or reduce the scratches generated on the polished surface. In addition, in the present specification, the "average aspect ratio (longitudinal diameter/short diameter ratio)" is calculated by the following method. That is, 200 particles were observed using a scanning electron microscope (SEM), and the smallest rectangle circumscribing the respective particle images was drawn. Next, the length (length of the long diameter) of the long side of the obtained rectangle was measured with respect to the length of the short side (the value of the short diameter), and the average value was calculated and obtained.

二氧化矽粒子之真比重並無特別限制,較好為1.5以上,更好為1.6以上,又更好為1.7以上。二氧化矽粒子之真比重為1.5以上時,研磨時可獲得高的研磨速度故較佳。 The true specific gravity of the cerium oxide particles is not particularly limited, and is preferably 1.5 or more, more preferably 1.6 or more, and still more preferably 1.7 or more. When the true specific gravity of the cerium oxide particles is 1.5 or more, a high polishing rate can be obtained at the time of polishing, which is preferable.

此外,二氧化矽粒子之真比重較好為2.2以下,更好為2.1以下。又,本說明書中,「真比重」之值係採用由使粒子乾燥時之質量,與將已知容量乙醇注滿於其中時之 質量算出之值者。 Further, the true specific gravity of the cerium oxide particles is preferably 2.2 or less, more preferably 2.1 or less. In addition, in the present specification, the value of "true specific gravity" is determined by the mass of the particles when they are dried, and when the known capacity of ethanol is filled therein. The value of the quality calculation.

研磨用組成物中之二氧化矽粒子之含量相對於研磨用組成物之總量較好為0.1質量%以上,更好為0.2質量%以上,又更好為0.3質量%以上。研磨用組成物中之二氧化矽粒子之含量為0.1質量%以上時,可提高對成為研磨對象之面的研磨速度等之表面加工性能故較佳。 The content of the cerium oxide particles in the polishing composition is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and still more preferably 0.3% by mass or more based on the total amount of the polishing composition. When the content of the cerium oxide particles in the polishing composition is 0.1% by mass or more, the surface processing property such as the polishing rate of the surface to be polished can be improved.

且,研磨用組成物中之二氧化矽粒子之含量相對於研磨用組成物總量較好為10質量%以下,更好為5質量%以下,又更好為3質量%以下。研磨用組成物中之二氧化矽粒子之含量為10質量%以下時,可提高研磨用組成物之分散安定性,且減低經研磨面之二氧化矽粒子之殘留物故較佳。 In addition, the content of the cerium oxide particles in the polishing composition is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 3% by mass or less based on the total amount of the polishing composition. When the content of the cerium oxide particles in the polishing composition is 10% by mass or less, the dispersion stability of the polishing composition can be improved, and the residue of the cerium oxide particles on the polished surface can be reduced.

〔鹼性化合物〕 [basic compound]

鹼性化合物具有化學研磨成為研磨對象之面的功能。且,具有提高研磨速度之功能。再者,具有提高研磨用組成物之分散安定性之功能。 The basic compound has a function of chemically polishing the surface to be polished. Moreover, it has the function of increasing the polishing speed. Further, it has a function of improving the dispersion stability of the polishing composition.

前述鹼性化合物並無特別限制,可列舉為氨、胺、四級銨之氫氧化物或鹽、鹼金屬之氫氧化物或鹽等。此時,前述鹽列舉為碳酸鹽、碳酸氫鹽、硫酸鹽、乙酸鹽等。 The basic compound is not particularly limited, and examples thereof include ammonia, an amine, a quaternary ammonium hydroxide or a salt, an alkali metal hydroxide or a salt. In this case, the salt is exemplified by a carbonate, a hydrogencarbonate, a sulfate, an acetate or the like.

胺之具體例列舉為甲胺、二甲胺、三甲胺、乙胺、二乙胺、三乙胺、乙二胺、單乙醇胺、N-(β-胺基乙基)乙醇胺、六亞甲基二胺、二伸乙基三胺、三伸乙基四胺、無水哌啶、哌啶六水合物、1-(2-胺基乙基)哌啶、N-甲基 哌啶、胍等。 Specific examples of the amine are exemplified by methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N-(β-aminoethyl)ethanolamine, hexamethylene Diamine, di-ethyltriamine, tri-ethyltetramine, anhydrous piperidine, piperidine hexahydrate, 1-(2-aminoethyl)piperidine, N-methyl Piperidine, hydrazine, etc.

四級銨之氫氧化物或鹽列舉為氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丁基銨、碳酸氫銨、碳酸銨等。 The quaternary ammonium hydroxide or salt is exemplified by tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium hydrogencarbonate, ammonium carbonate and the like.

鹼金屬之氫氧化物或鹽列舉為氫氧化鉀、碳酸鉀、碳酸氫鉀、硫酸鉀、乙酸鉀、氯化鉀、氫氧化鈉、碳酸鈉、碳酸氫鈉、硫酸鈉、乙酸鈉、氯化鈉等。 The hydroxide or salt of an alkali metal is exemplified by potassium hydroxide, potassium carbonate, potassium hydrogencarbonate, potassium sulfate, potassium acetate, potassium chloride, sodium hydroxide, sodium carbonate, sodium hydrogencarbonate, sodium sulfate, sodium acetate, and chlorination. Sodium and so on.

上述鹼性化合物中,以氨、四級銨之氫氧化物或鹽、鹼金屬之氫氧化物或鹽較佳,更好為氨、氫氧化四甲基銨、氫氧化四乙基銨、碳酸氫銨、碳酸銨、氫氧化鉀、碳酸鉀、碳酸氫鉀、氫氧化鈉、碳酸鈉、碳酸氫鈉,又更好為氨、氫氧化四甲基銨、氫氧化四乙基銨氫氧化鉀、氫氧化鈉,最好為氨、氫氧化四甲基銨,又最好為氨。 Among the above basic compounds, ammonia, a quaternary ammonium hydroxide or a salt, an alkali metal hydroxide or a salt is preferred, and more preferably ammonia, tetramethylammonium hydroxide, tetraethylammonium hydroxide or carbonic acid. Ammonium hydroxide, ammonium carbonate, potassium hydroxide, potassium carbonate, potassium hydrogencarbonate, sodium hydroxide, sodium carbonate, sodium hydrogencarbonate, and more preferably ammonia, tetramethylammonium hydroxide, tetraethylammonium hydroxide potassium hydroxide Sodium hydroxide, preferably ammonia, tetramethylammonium hydroxide, and preferably ammonia.

上述鹼性化合物可單獨使用,亦可組合2種以上使用。 These basic compounds may be used singly or in combination of two or more.

研磨用組成物中之鹼性化合物之含量相對於研磨用組成物之總量,較好為0.001質量%以上,更好為0.002質量%以上,又更好為0.003質量%以上,最好為0.004質量%以上。研磨用組成物中之鹼性化合物之含量在0.001質量%以上時,可提高成為研磨對象之面的化學研磨作用,且,亦可提高研磨用組成物之分散安定性故較佳。 The content of the basic compound in the polishing composition is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, still more preferably 0.003% by mass or more, and most preferably 0.004, based on the total amount of the polishing composition. More than % by mass. When the content of the basic compound in the polishing composition is 0.001% by mass or more, the chemical polishing action of the surface to be polished can be improved, and the dispersion stability of the polishing composition can be improved, which is preferable.

且,研磨用組成物中之鹼性化合物之含量相對於研磨用組成物之總量,較好為1.0質量%以下,更好為0.5質量%以下,又更好為0.2質量%以下,最好為0.1質量%以下。研磨用組成物中之鹼性化合物之含量為1.0質量%以 下時,可提高經研磨之面的平滑性故較佳。 Further, the content of the basic compound in the polishing composition is preferably 1.0% by mass or less, more preferably 0.5% by mass or less, still more preferably 0.2% by mass or less, based on the total amount of the polishing composition. It is 0.1% by mass or less. The content of the basic compound in the polishing composition is 1.0% by mass. In the case of the lower side, the smoothness of the surface to be polished can be improved, which is preferable.

〔溶劑成分〕 [solvent component]

溶劑成分由於能使用上述者故此處省略說明。 Since the solvent component can use the above, the description is omitted here.

〔研磨用組成物之雜質〕 [Impurity of the composition for polishing]

研磨用組成物之雜質列舉為源自纖維素衍生物之製造的雜質及/或肇因於由二氧化矽粒子、鹼性化合物、及溶劑成分所組成群組選出之至少一種的雜質。亦即,所謂研磨用組成物之雜質係與上述促進基板濕潤性組成物中之雜質(源自纖維素衍生物之製造的雜質)不同之概念。 The impurities of the polishing composition are exemplified by impurities derived from the production of the cellulose derivative and/or impurities derived from at least one selected from the group consisting of cerium oxide particles, basic compounds, and solvent components. In other words, the impurities of the polishing composition are different from the impurities (the impurities derived from the production of the cellulose derivative) in the substrate wettability promoting composition.

前述源自纖維素衍生物之製造的雜質列舉為上述者。 The impurities derived from the production of the cellulose derivative are exemplified above.

前述肇因於由二氧化矽粒子、鹼性化合物、及溶劑成分所組成群組選出之至少1種的雜質列舉為例如研磨用組成物之製造過程中因二氧化矽粒子之凝聚所成之二氧化矽之凝聚物等。 The at least one impurity selected from the group consisting of cerium oxide particles, a basic compound, and a solvent component is exemplified by, for example, agglomeration of cerium oxide particles in the production process of the polishing composition. Agglomerates of cerium oxide, and the like.

〔其他添加劑〕 [Other additives]

研磨用組成物中所含有之添加劑並無特別限制,列舉為研磨粒、pH調整劑、界面活性劑、有機酸或其鹽‧無機酸或其鹽、螯合劑、防腐劑、防黴劑等。 The additive contained in the polishing composition is not particularly limited, and examples thereof include abrasive grains, a pH adjuster, a surfactant, an organic acid or a salt thereof, an inorganic acid or a salt thereof, a chelating agent, a preservative, and an antifungal agent.

(研磨粒) (abrasive grain)

研磨粒為二氧化矽粒子,同時具有機械研磨成為研磨 對象之面的功能。 The abrasive grains are cerium oxide particles and mechanically ground to become abrasive The function of the face of the object.

前述研磨粒列舉為二氧化矽粒子以外之無機粒子、有機粒子、有機無機複合粒子。 The abrasive grains are exemplified by inorganic particles other than cerium oxide particles, organic particles, and organic-inorganic composite particles.

前述二氧化矽粒子以外之無機粒子列舉為氧化鋁(Al2O3)粒子、氧化鈰(CeO2)粒子、氧化鈦(TiO2)粒子、氮化矽粒子、碳化矽粒子、氮化硼粒子等。 The inorganic particles other than the cerium oxide particles are exemplified by alumina (Al 2 O 3 ) particles, cerium oxide (CeO 2 ) particles, titanium oxide (TiO 2 ) particles, tantalum nitride particles, cerium carbide particles, and boron nitride particles. Wait.

前述有機粒子列舉為聚甲基丙烯酸甲酯(PMMA)粒子等。 The organic particles are exemplified by polymethyl methacrylate (PMMA) particles and the like.

研磨粒之含量並無特別限制,可依據研磨用組成物之用途等適當設定。 The content of the abrasive grains is not particularly limited and may be appropriately set depending on the use of the polishing composition or the like.

(pH調整劑) (pH adjuster)

pH調整劑具有調整研磨用組成物之pH的功能。藉由調整pH,可控制研磨速度或二氧化矽粒子之分散性等。 The pH adjuster has a function of adjusting the pH of the polishing composition. By adjusting the pH, the polishing rate or the dispersibility of the cerium oxide particles can be controlled.

至於pH調整劑並無特別限制,列舉為習知之酸、鹼、或該等之鹽。 The pH adjusting agent is not particularly limited and is exemplified by a conventional acid, a base, or a salt thereof.

至於前述酸列舉為鹽酸、硫酸、硝酸、氫氟酸、硼酸、碳酸、次磷酸、亞磷酸及磷酸等無機酸;甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、正己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、正庚酸、2-甲基己酸、正辛酸、2-乙基己酸、苯甲酸、乙醇酸、水楊酸、甘油酸(glyceric acid)、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸(pimelic acid)、馬來酸、苯二甲酸、蘋果酸、酒石酸、檸檬酸、乳酸、二乙醇酸、2-呋喃 羧酸(2-furancarboxylic acid)、2,5-呋喃二羧酸、3-呋喃羧酸、2-四氫呋喃羧酸、甲氧基乙酸、甲氧基苯基乙酸、苯氧基乙酸等有機酸。該等中,pH調整劑以硫酸、硝酸、磷酸、乙醇酸、琥珀酸、馬來酸、檸檬酸、酒石酸、蘋果酸、戊二酸、衣康酸較佳。 The acid is exemplified by inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid; formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-Hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid , glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid , tartaric acid, citric acid, lactic acid, glycolic acid, 2-furan An organic acid such as 2-furancarboxylic acid, 2,5-furandicarboxylic acid, 3-furancarboxylic acid, 2-tetrahydrofurancarboxylic acid, methoxyacetic acid, methoxyphenylacetic acid or phenoxyacetic acid. Among these, the pH adjuster is preferably sulfuric acid, nitric acid, phosphoric acid, glycolic acid, succinic acid, maleic acid, citric acid, tartaric acid, malic acid, glutaric acid or itaconic acid.

前述鹼除上述鹼性化合物以外,列舉為脂肪族胺、芳香族胺等胺;有機鹼;鹼土類金屬之氫氧化物等。該等中,前述鹼就取得容易性之觀點而言,較好為氫氧化鉀、氨。 The base is exemplified by an amine such as an aliphatic amine or an aromatic amine, an organic base, or a hydroxide of an alkaline earth metal, in addition to the above basic compound. Among these, the base is preferably potassium hydroxide or ammonia from the viewpoint of easiness of availability.

且,亦可使用上述酸之銨鹽或鹼金屬鹽等之鹽取代前述酸或鹼、或與之組合作為pH調整劑。尤其,使用弱酸與強鹼、強酸與弱鹼、弱酸與弱鹼之組合時,可獲得pH之緩衝作用。 Further, a salt such as an ammonium salt or an alkali metal salt described above may be used in place of or in combination with the above acid or base as a pH adjuster. In particular, when a weak acid and a strong base, a strong acid and a weak base, a combination of a weak acid and a weak base are used, a buffering effect of pH can be obtained.

pH調整劑之添加量並無特別限制,可以使研磨用組成物成為期望pH之方式適當設定。 The amount of the pH adjuster to be added is not particularly limited, and can be appropriately set so that the polishing composition has a desired pH.

(界面活性劑) (surfactant)

界面活性劑具有抑制研磨面粗糙之功能。藉由抑制研磨面之粗糙,能降低研磨面之濁度。又,本形態之研磨用組成物由於包含進行化學研磨之鹼性化合物,故藉由添加界面活性劑,可更有效地抑制研磨面之粗糙。 The surfactant has a function of suppressing the roughness of the polished surface. By suppressing the roughness of the polished surface, the turbidity of the polished surface can be reduced. Further, since the polishing composition of the present embodiment contains a basic compound which is chemically polished, it is possible to more effectively suppress the roughness of the polished surface by adding a surfactant.

界面活性劑並無特別限制,列舉為重量平均分子量未達1000之非離子性或離子性界面活性劑。 The surfactant is not particularly limited and is exemplified by a nonionic or ionic surfactant having a weight average molecular weight of less than 1,000.

前述非離子性之界面活性劑列舉為氧基伸烷基聚合 物、聚氧伸烷基加成物等。 The aforementioned nonionic surfactants are exemplified by oxyalkylene polymerization. , polyoxyalkylene alkyl adducts, and the like.

前述氧基伸烷基聚合物列舉為聚乙二醇、聚丙二醇等。 The above-mentioned oxyalkylene polymer is exemplified by polyethylene glycol, polypropylene glycol or the like.

前述聚氧伸烷基加成物列舉為聚氧伸乙基丙基醚、聚氧伸乙基丁基醚、聚氧伸乙基戊基醚、聚氧伸乙基己基醚、聚氧伸乙基辛基醚、聚氧伸乙基-2-乙基己基醚、聚氧伸乙基壬基醚、聚氧伸乙基癸基醚、聚氧伸乙基異癸基醚、聚氧伸乙基十三烷基醚、聚氧伸乙基月桂基醚、聚氧伸乙基鯨蠟基醚、聚氧伸乙基硬脂基醚、聚氧伸乙基異硬脂基醚、聚氧伸乙基油基醚等聚氧伸乙基烷基醚;聚氧伸乙基苯基醚、聚氧伸乙基辛基苯基醚、聚氧伸乙基壬基苯基醚、聚氧伸乙基十二烷基醚、聚氧伸乙基苯乙烯化苯基醚等聚氧伸乙基烷基苯基醚;聚氧伸乙基月桂基胺、聚氧伸乙基硬脂基胺、聚氧伸乙基油基胺等聚氧伸乙基烷基胺;聚氧伸乙基硬脂醯胺、聚氧伸乙基油基醯胺等聚氧伸乙基烷基醯胺;聚氧伸乙基單月桂酸酯、聚氧伸乙基單硬脂酸酯、聚氧伸乙基二硬脂酸酯、聚氧伸乙基單油酸酯、聚氧伸乙基二油酸酯等聚氧伸乙基脂肪酸酯;聚氧伸乙基甘油醚脂肪酸酯;單月桂酸聚氧伸乙基山梨糖醇酐、單棕櫚酸聚氧伸乙基山梨糖醇酐、單硬脂酸聚氧伸乙基山梨糖醇酐、單油酸聚氧伸乙基山梨糖醇酐、三油酸聚氧伸乙基山梨糖醇酐、四油酸聚氧伸乙基山梨糖醇酐等聚氧伸乙基山梨糖醇酐脂肪酸酯等;聚氧伸乙基蓖麻油、聚氧伸乙基硬化蓖麻油等蓖麻油;聚氧伸乙基聚氧伸丙基共聚物等共 聚物等。 The polyoxyalkylene alkyl adducts are exemplified by polyoxyethylene ethyl propyl ether, polyoxyethylene ethyl butyl ether, polyoxyethylene ethyl pentyl ether, polyoxyethylene ethyl hexyl ether, polyoxyethylene P-octyl ether, polyoxyethylene ethyl-2-ethylhexyl ether, polyoxyethyl ether, polyoxyethyl ether, polyoxyethylene ethyl isodecyl ether, polyoxyethylene Tridecyl ether, polyoxyethylene ethyl lauryl ether, polyoxyethylene ethyl cetyl ether, polyoxyethylene ethyl stearyl ether, polyoxyethylene ethyl isostearyl ether, polyoxyl extension Polyoxyethylene ethyl ether such as ethyl oleyl ether; polyoxyethylene ethyl phenyl ether, polyoxyethyl octyl phenyl ether, polyoxyethyl phenyl ether, polyoxyethylene Polyoxyethylene ethyl phenyl ether such as dodecyl ether, polyoxyethylidene styrene phenyl ether; polyoxyethylene ethyl laurylamine, polyoxyethylene ethyl stearylamine, poly Polyoxyethylene ethylamine, such as oxygen-extension ethyl oleylamine; polyoxyethylene ethyl decylamine such as polyoxyethylene ethyl stearylamine, polyoxyethylene ethyl decylamine; polyoxyalkylene Ethyl monolaurate, polyoxyethylidene monostearate, polyoxyethylene ethyl stearate Polyoxyethylene ethyl oleate, polyoxyethylidene dioleate, polyoxyethylidene ether fatty acid ester; polyoxyethylene ethyl glyceryl ether fatty acid ester; monolauric acid polyoxyethylene ethyl sorbitol Sugar alcohol anhydride, monopalmitic acid polyoxyethylene ethyl sorbitan, monostearic acid polyoxyethylene sorbitan, monooleic acid polyoxyethylene sorbitan, trioleic acid polyoxygen Polyoxyethylene sorbitan fatty acid esters such as ethyl sorbitan, tetraoleic acid polyoxyethylene sorbitan, etc.; polyoxylated ethyl castor oil, polyoxyethylene ethyl hardened castor oil Such as castor oil; polyoxy-extension ethyl polyoxypropyl propyl copolymer Polymer, etc.

上述界面活性劑中,為降低起泡性,使研磨用組成物之調製時或使用時之作業變得較容易,且就使pH之調整容易之觀點而言,較好使用非離子界面活性劑。 Among the above surfactants, in order to reduce the foaming property, it is easy to prepare the polishing composition at the time of preparation or use, and it is preferable to use a nonionic surfactant from the viewpoint of easy pH adjustment. .

上述界面活性劑可單獨使用,亦可組合2種以上使用。 These surfactants may be used singly or in combination of two or more.

(有機酸或其鹽‧無機酸或其鹽) (Organic acid or its salt ‧ mineral acid or its salt)

有機酸或其鹽‧無機酸或其鹽具有提高研磨面之親水性的功能。 The organic acid or a salt thereof, the inorganic acid or a salt thereof has a function of improving the hydrophilicity of the polished surface.

有機酸並無特別限制,列舉為甲酸、乙酸、丙酸等脂肪酸;苯甲酸、苯二甲酸等芳香族羧酸;檸檬酸、草酸、酒石酸、蘋果酸、馬來酸、富馬酸、琥珀酸等多元羧酸;有機磺酸;有機磷酸等。 The organic acid is not particularly limited, and is exemplified by fatty acids such as formic acid, acetic acid, and propionic acid; aromatic carboxylic acids such as benzoic acid and phthalic acid; citric acid, oxalic acid, tartaric acid, malic acid, maleic acid, fumaric acid, and succinic acid. Such as polycarboxylic acid; organic sulfonic acid; organic phosphoric acid and the like.

有機酸鹽並無特別限制,列舉為上述有機酸之鈉鹽、鉀鹽等鹼金屬鹽;銨鹽等。 The organic acid salt is not particularly limited, and examples thereof include alkali metal salts such as sodium salts and potassium salts of the above organic acids; ammonium salts and the like.

無機酸並無特別限制,列舉為硫酸、硝酸、鹽酸、碳酸等。 The inorganic acid is not particularly limited, and examples thereof include sulfuric acid, nitric acid, hydrochloric acid, and carbonic acid.

無機酸鹽並無特別限制,列舉為上述無機酸之鈉鹽、鉀鹽等鹼金屬鹽;銨鹽等。 The inorganic acid salt is not particularly limited, and examples thereof include an alkali metal salt such as a sodium salt or a potassium salt of the above inorganic acid; an ammonium salt;

該等中,就抑制研磨製品之金屬污染之觀點而言,較好使用有機酸或無機酸之銨鹽。 Among these, an ammonium salt of an organic acid or an inorganic acid is preferably used from the viewpoint of suppressing metal contamination of the abrasive article.

上述有機酸或其鹽‧無機酸或其鹽可單獨使用,亦可組合2種以上使用。 The organic acid or a salt thereof, the inorganic acid or a salt thereof may be used singly or in combination of two or more.

(螯合劑) (chelating agent)

螯合劑係藉由與金屬雜質形成錯合物而捕捉金屬雜質,而具有防止或抑制研磨製品之金屬污染的功能。 The chelating agent has a function of preventing or suppressing metal contamination of the abrasive article by forming a complex compound with metal impurities to capture metal impurities.

螯合劑並無特別限制,但列舉為胺基羧酸系螯合劑、有機膦酸系螯合劑等。 The chelating agent is not particularly limited, and examples thereof include an aminocarboxylic acid-based chelating agent and an organic phosphonic acid-based chelating agent.

前述胺基羧酸系螯合劑列舉為乙二胺四乙酸、乙二胺四乙酸鈉、氮基三乙酸、氮基三乙酸鈉、氮基三乙酸銨、羥基乙基乙二胺三乙酸、羥基乙基乙二胺三乙酸鈉、二伸乙三胺五乙酸、二伸乙三胺五乙酸鈉、三伸乙四胺六乙酸、三伸乙四胺六乙酸鈉等。 The above-mentioned aminocarboxylic acid-based chelating agent is exemplified by ethylenediaminetetraacetic acid, sodium ethylenediaminetetraacetate, nitrogen triacetic acid, sodium nitrotriacetate, ammonium nitroacetate, hydroxyethylethylenediaminetriacetic acid, and hydroxy group. Ethyl ethylenediamine triacetate, diamethylenetriamine pentaacetic acid, sodium diethylenediaminepentaacetate, triamethylenetetraamine hexaacetic acid, sodium triamethylenetetraacetate, and the like.

前述有機膦酸系螯合劑列舉為2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺肆(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、三伸乙四胺六(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1-二膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羥基-1,2-二膦酸、甲烷羥基膦酸、2-膦基丁烷-1,2-二羧酸、1-膦基丁烷-2,3,4-三羧酸、α-甲基膦基琥珀酸等。 The aforementioned organic phosphonic acid chelating agents are exemplified by 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotris(methylenephosphonic acid), ethylenediamine oxime (Asian). Methylphosphonic acid), diethylenetriamine penta (methylene phosphonic acid), triamethylenetetramine hexa (methylene phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1, 1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dihydroxy- 1,2-diphosphonic acid, methane hydroxyphosphonic acid, 2-phosphinobutane-1,2-dicarboxylic acid, 1-phosphinobutane-2,3,4-tricarboxylic acid, α-methylphosphine Succinic acid and the like.

上述螯合劑中,以有機膦酸系螯合劑較佳,更好為乙二胺肆(亞甲基膦酸)。 Among the above chelating agents, an organic phosphonic acid-based chelating agent is preferred, and ethylenediamine hydrazine (methylene phosphonic acid) is more preferred.

上述螯合劑可單獨使用,亦可組合2種以上使用。 These chelating agents may be used singly or in combination of two or more.

(防腐劑‧防黴劑) (preservatives, anti-mold agents)

防腐劑‧防黴劑並無特別限制,列舉為2-甲基-4-異噻唑啉-3-酮或5-氯-2-甲基-4-異噻唑啉-3-酮等異噻唑啉系化合物;對羥基苯甲酸酯類;苯氧基乙醇等。 The preservative ‧ antifungal agent is not particularly limited, and is exemplified by isomethylthiazoline such as 2-methyl-4-isothiazolin-3-one or 5-chloro-2-methyl-4-isothiazolin-3-one. Compounds; p-hydroxybenzoic acid esters; phenoxyethanol and the like.

上述防腐劑‧防黴劑可單獨使用,亦可組合2種以上使用。 The above-mentioned preservatives and antifungal agents may be used singly or in combination of two or more.

〈研磨用組成物之製造方法〉 <Method for Producing Composition for Grinding>

研磨用組成物之製造方法並無特別限制,可應用習知之方法。作為具體例,可藉由依序將親水性成分、二氧化矽粒子、鹼性化合物、及任意之添加劑添加於溶劑成分中而製造。且,亦可將二氧化矽粒子及鹼性化合物添加於溶劑成分中,藉由於所合混合液中添加含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物),而製造研磨用組成物。該等中,較好以後者之方法製造研磨用組成物。亦即,較佳之實施形態中,研磨用組成物之製造方法包含將二氧化矽粒子、及鹼性化合物添加於溶劑成分中調製混合液之步驟,及將含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)添加於前述混合液中之步驟。此時,任意之添加劑可添加於前述混合液中,亦可添加於基板濕潤性組成物中。以下,針對藉上述之較佳實施形態之製造方法加以說明。 The method for producing the polishing composition is not particularly limited, and a conventional method can be applied. As a specific example, a hydrophilic component, a cerium oxide particle, a basic compound, and an arbitrary additive can be produced by sequentially adding to a solvent component. Further, the cerium oxide particles and the basic compound may be added to the solvent component, and a solution containing a hydrophilic component and a solvent component (promoting the substrate wettability component) may be added to the mixed liquid to prepare a polishing composition. Things. Among these, a polishing composition is preferably produced by the latter method. That is, in a preferred embodiment, the method for producing a polishing composition includes a step of adding a cerium oxide particle and a basic compound to a solvent component to prepare a mixed solution, and a solution containing a hydrophilic component and a solvent component ( A step of adding a substrate wettability composition to the mixed liquid. In this case, any of the additives may be added to the mixed liquid or may be added to the substrate wettable composition. Hereinafter, a manufacturing method according to the above preferred embodiment will be described.

〔將二氧化矽粒子、及鹼性化合物添加於溶劑成分中調製混合液之步驟〕 [Step of adding cerium oxide particles and a basic compound to a solvent component to prepare a mixed solution]

本步驟係調製混合液。 This step is to prepare a mixed solution.

混合液含有二氧化矽粒子、鹼性化合物、及溶劑成分。亦可視需要含任意之添加劑。 The mixed solution contains cerium oxide particles, a basic compound, and a solvent component. It may also contain any additives as needed.

混合液中之二氧化矽成分之含量相對於混合液總量,較好為1質量%以上,更好為3質量%以上,又更好為5質量%以上。二氧化矽粒子之含量為1質量%以上時,所製造之研磨用組成物中之二氧化矽粒子含量之調整變得較容易故較佳。 The content of the cerium oxide component in the mixed liquid is preferably 1% by mass or more, more preferably 3% by mass or more, and still more preferably 5% by mass or more based on the total amount of the mixed liquid. When the content of the cerium oxide particles is 1% by mass or more, it is preferable to adjust the content of the cerium oxide particles in the polishing composition to be produced.

且,混合液中之二氧化矽粒子之含量相對於混合液總量較好為50質量%以下,更好為40質量%以下,又更好為30質量%以下。二氧化矽粒子之含量為50質量%以下時,可防止二氧化矽粒子之凝聚故較佳。 Further, the content of the cerium oxide particles in the mixed liquid is preferably 50% by mass or less, more preferably 40% by mass or less, and still more preferably 30% by mass or less based on the total amount of the mixed liquid. When the content of the cerium oxide particles is 50% by mass or less, aggregation of the cerium oxide particles can be prevented, which is preferable.

混合液中之鹼性化合物之含量相對於混合液總量,較好為0.01質量%以上,更好為0.05質量%以上,又更好為0.1質量%以上。鹼性化合物之含量為0.01質量%以上時,可抑制二氧化矽粒子之凝聚故較佳。 The content of the basic compound in the mixed liquid is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and still more preferably 0.1% by mass or more based on the total amount of the mixed liquid. When the content of the basic compound is 0.01% by mass or more, aggregation of the cerium oxide particles can be suppressed, which is preferable.

且,混合液中之鹼性化合物之含量相對於混合液總量,較好為10質量%以下,更好為5質量%以下,又更好為3質量%以下。鹼性化合物之含量為10質量%以下時,所製造之研磨用組成物中之鹼性化合物之含量之調整變得較容易故較佳。 Further, the content of the basic compound in the mixed liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 3% by mass or less based on the total amount of the mixed liquid. When the content of the basic compound is 10% by mass or less, it is preferred to adjust the content of the basic compound in the polishing composition to be produced.

前述混合液之pH較好超過7(鹼性),更好為8以上,又更好為9以上。pH超過7(鹼性)時,將促進基板濕潤性組成物添加於含二氧化矽粒子等之混合液中時可抑 制二氧化矽粒子之凝聚。藉此,能使揮發提高最終獲得之研磨用組成物之分散安定性之作用變高之傾向故較佳。 The pH of the above mixed liquid is preferably more than 7 (basic), more preferably 8 or more, still more preferably 9 or more. When the pH exceeds 7 (basic), it is possible to suppress the substrate wettability composition from being added to a mixed liquid containing cerium oxide particles or the like. Coagulation of cerium oxide particles. Thereby, it is preferable to increase the effect of volatilization to improve the dispersion stability of the finally obtained polishing composition.

此外,前述混合液之pH較好為12以下,更好為10.5以下。pH為12以下時,可抑制二氧化矽粒子之溶解故較佳。 Further, the pH of the mixed liquid is preferably 12 or less, more preferably 10.5 or less. When the pH is 12 or less, it is preferred to suppress the dissolution of the cerium oxide particles.

任意之添加劑含量能依據成為期望之性能等適當設定。 The content of any additive can be appropriately set depending on the desired performance or the like.

〔將含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)添加於混合液中之步驟〕 [Step of adding a solution containing a hydrophilic component and a solvent component (promoting the substrate wettability composition) to the mixed solution]

本步驟係將含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)添加於上述步驟中調製之混合液中。此時,前述含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)可視需要含任意之添加劑。 In this step, a solution containing a hydrophilic component and a solvent component (a substrate-wetting composition is added) is added to the mixed solution prepared in the above step. In this case, the solution containing the hydrophilic component and the solvent component (the substrate wettability promoting composition) may optionally contain any additives.

前述混合液超過7時,混合液中之二氧化矽粒子具有高的分散安定性,故可防止或抑制添加含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)時所產生之二氧化矽之凝聚。 When the mixed liquid exceeds 7, the cerium oxide particles in the mixed liquid have high dispersion stability, so that it is possible to prevent or suppress the addition of a solution containing a hydrophilic component and a solvent component (promoting the substrate wettability composition). Coagulation of cerium oxide.

將前述含親水性成分及溶劑成分之溶液(促進基板濕潤性組成物)投入混合液中時之速度相對於混合液1L較好為0.1mL/分鐘以上,更好為1mL/分鐘以上,又更好為5mL/分鐘以上。投入速度為0.1mL/分鐘以上時,可提高研磨用組成物之生產效率故較佳。 The speed at which the solution containing the hydrophilic component and the solvent component (the substrate wettability-promoting composition) is put into the mixed solution is preferably 0.1 mL/min or more, more preferably 1 mL/min or more, and more preferably 1 L of the mixed solution. Good is 5mL / min or more. When the input speed is 0.1 mL/min or more, the production efficiency of the polishing composition can be improved, which is preferable.

另外,將前述含親水性成分及溶劑成分之溶液(促進 基板濕潤性組成物)投入混合液時之速度相對於混合液1L較好為500mL/分鐘以下,更好為100mL/分鐘以下,又更好為50mL/分鐘以下。投入速度為500mL/分鐘以下時,可抑制二氧化矽之凝聚故較佳。 In addition, the aforementioned solution containing a hydrophilic component and a solvent component (promoting The substrate wettability composition) is preferably used in an amount of 500 mL/min or less, more preferably 100 mL/min or less, and more preferably 50 mL/min or less, based on 1 L of the mixed liquid. When the input speed is 500 mL/min or less, it is preferable to suppress the aggregation of cerium oxide.

研磨用組成物亦可藉由以水稀釋研磨用組成物之原液而調製。該情況之稀釋倍率較好為2倍以上,更好為5倍以上,又更好為10倍以上。上述稀釋倍率為2倍以上時,研磨用組成物之原液之輸送成本變得較便宜,同時可節省保管場所故較佳。 The polishing composition can also be prepared by diluting a stock solution of the polishing composition with water. The dilution ratio in this case is preferably 2 times or more, more preferably 5 times or more, and still more preferably 10 times or more. When the dilution ratio is twice or more, the transportation cost of the stock solution for the polishing composition becomes relatively low, and the storage place can be saved, which is preferable.

此外,上述稀釋倍率較好為100倍以下,更好為50倍以下,又更好為40倍以下。上述稀釋倍率為100倍以下時,易於保有研磨用組成物原液之安定性故較佳。 Further, the above dilution ratio is preferably 100 times or less, more preferably 50 times or less, still more preferably 40 times or less. When the dilution ratio is 100 times or less, it is easy to maintain the stability of the polishing composition stock solution.

本形態之研磨用組成物之特徵如上述,係雜質(研磨用組成物之雜質)為0.1質量%以下。因此,製造上述研磨用組成物時,有必要適當設定原料、製造條件等,使研磨用組成物之雜質成為0.1質量%以下。 The polishing composition of the present embodiment is characterized in that the impurities (impurities of the polishing composition) are 0.1% by mass or less as described above. Therefore, when the above-mentioned polishing composition is produced, it is necessary to appropriately set the raw materials, the production conditions, and the like, and the impurities of the polishing composition are made 0.1% by mass or less.

使研磨用組成物之雜質成為0.1質量%以下之手段並無特別限制,列舉為使用藉由包含上述之(A)步驟~(C)步驟之至少1步驟而去除或減低源自纖維素衍生物之製造的雜質後之纖維素衍生物或研磨用組成物作為原料之方法;藉由控制投入二氧化矽粒子之順序或投入速度、所投入之液體的pH、投入後之pH等,而防止二氧化矽粒子凝聚之方法等。又,以經過(C)步驟所製造之纖維素衍生物等作為原料製造研磨用組成物時,會有較好地減低 研磨用組成物中所含之鎂及鈣之至少一者的含量之傾向。 The means for setting the impurity of the polishing composition to 0.1% by mass or less is not particularly limited, and it is exemplified to remove or reduce the cellulose derivative derived by using at least one step including the above steps (A) to (C). A method for using a cellulose derivative or a polishing composition after the production of impurities as a raw material; and preventing the second step by controlling the order of the input of the cerium oxide particles, the input speed, the pH of the liquid to be charged, the pH after the input, and the like A method of agglomerating cerium oxide particles, and the like. Moreover, when the polishing composition is produced by using the cellulose derivative produced in the step (C) as a raw material, the polishing composition is preferably reduced. The tendency of the content of at least one of magnesium and calcium contained in the polishing composition.

〈基板之製造方法〉 <Method of Manufacturing Substrate>

上述之研磨用組成物能用於基板研磨之用途。作為該基板列舉為形成有氧化矽膜、氮化矽膜等無機絕緣膜之基板、形成有多晶矽膜之基板及矽晶圓等。該等中,本形態之研磨用組成物由於含有二氧化矽粒子,故較好應用形成有多晶矽之基板、矽晶圓作為基板,更好應用矽晶圓。藉此,可製造具有高性能之矽晶圓。 The above polishing composition can be used for substrate polishing. The substrate is exemplified by a substrate on which an inorganic insulating film such as a ruthenium oxide film or a tantalum nitride film is formed, a substrate on which a polysilicon film is formed, a germanium wafer, or the like. In these cases, since the polishing composition of the present embodiment contains cerium oxide particles, it is preferable to use a substrate on which polycrystalline germanium is formed or a germanium wafer as a substrate, and it is preferable to use a germanium wafer. Thereby, a high performance germanium wafer can be manufactured.

亦即,依據本發明之一形態,係提供一種矽晶圓之製造方法。前述矽晶圓之製造方法包含藉研磨用組成物研磨矽晶圓。 That is, according to one aspect of the present invention, a method of manufacturing a tantalum wafer is provided. The method for manufacturing a tantalum wafer includes polishing a tantalum wafer with a polishing composition.

矽晶圓大多情況係藉由Cz法(Czochralski法)或Fz法(浮區法(Floating Zone法))形成矽單晶錠塊,且將其加工予以製造。此時,上述研磨用組成物能使用於使自矽單晶錠塊切成圓盤狀之矽基板表面平面化之粗研磨步驟(一次研磨‧二次研磨)、進一步去除粗研磨步驟後之矽基板表面存在之微細凹凸予以鏡面化之最終研磨步驟中。為獲得具有優異性能之研磨對象物,前述研磨用組成物較好使用於最終研磨步驟。 In most cases, a germanium single crystal ingot is formed by a Cz method (Czochralski method) or a Fz method (Floating Zone method), and is processed and manufactured. In this case, the polishing composition can be subjected to a rough polishing step (primary polishing, secondary polishing) for planarizing the surface of the substrate from which the single crystal ingot is cut into a disk shape, and further removing the rough polishing step. The final polishing step is performed by mirroring the fine concavities and convexities on the surface of the substrate. In order to obtain an object to be polished having excellent properties, the above-mentioned polishing composition is preferably used in the final polishing step.

所用之研磨裝置並無特別限制,可使用安裝有保持具有研磨對象物之基板等之固定器、與可變更轉數之馬達等,且具有可貼附研磨墊(研磨布)之研磨壓盤之一般研磨裝置。 The polishing apparatus to be used is not particularly limited, and a holder for holding a substrate having an object to be polished or the like, a motor capable of changing the number of revolutions, and the like, and a polishing platen to which a polishing pad (polishing cloth) can be attached can be used. General grinding equipment.

關於前述研磨墊亦無特別限制,可使用一般之不織布、聚胺基甲酸酯、多孔質氟樹脂等。此時,前述研磨墊較好施以可使研磨液積存之溝槽加工。 The polishing pad is not particularly limited, and a general nonwoven fabric, a polyurethane, a porous fluororesin or the like can be used. At this time, the polishing pad is preferably processed by a groove which allows the polishing liquid to accumulate.

關於研磨條件亦無特別限制,可適當設定。例如,研磨壓盤之轉數較好為10~500rpm。此外,施加於具有研磨對象物之基板的壓力(研磨壓力)較好為0.5~10psi。 The polishing conditions are not particularly limited and can be appropriately set. For example, the number of revolutions of the grinding platen is preferably from 10 to 500 rpm. Further, the pressure (grinding pressure) applied to the substrate having the object to be polished is preferably from 0.5 to 10 psi.

關於將研磨用組成物供給於研磨墊之方法亦無特別限制,可採用例如以泵等連續供給之方法。此時,關於供給量亦無限制,但較好總是以本發明之研磨用組成物覆蓋研磨墊之表面。 The method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying the pump or the like can be employed. In this case, the amount of supply is not limited, but it is preferred to cover the surface of the polishing pad with the polishing composition of the present invention.

使用研磨用組成物研磨基板時,亦可回收一次研磨中使用之研磨用組成物,再度使用於基板之研磨。至於再使用研磨用組成物之方法列舉為例如將自研磨裝置排出之研磨用組成物回收於桶槽內,循環至再度研磨裝置內而使用之方法。再使用研磨用組成物之方法,基於可藉由減低作為廢液排出之研磨用組成物之量而減低環境負荷方面,及可藉由減少使用之研磨用組成物之量而抑制基板研磨之製造成本方面而言係為有用。 When the substrate is polished using the polishing composition, the polishing composition used in the polishing can be recovered once and used again for polishing the substrate. The method of reusing the polishing composition is exemplified by a method in which the polishing composition discharged from the polishing apparatus is collected in a tank and circulated to the re-grinding apparatus. Further, by using the polishing composition, the environmental load can be reduced by reducing the amount of the polishing composition discharged as the waste liquid, and the substrate polishing can be suppressed by reducing the amount of the polishing composition to be used. It is useful in terms of cost.

又,再使用研磨用組成物時,較好添加因研磨而消耗‧損失之親水性成分等之各成分之一部分或全部作為組成物調整劑。又,親水性成分之調製方法可適當參照上述研磨用組成物之製造方法之記載。 Further, when the polishing composition is further used, it is preferred to add a part or all of each of the components such as the hydrophilic component which is consumed by polishing to the loss, as a composition adjusting agent. Further, the method for preparing the hydrophilic component can be appropriately referred to the description of the method for producing the polishing composition.

研磨用組成物亦可應用於獲得矽晶圓以外之研磨製品之研磨用組成物中。矽晶圓以外之研磨製品之具體例列舉 為不鏽鋼等之金屬、塑膠基板、玻璃基板、石英基板等。又,研磨用組成物中含有之成分亦可依據研磨製品適當變更。 The polishing composition can also be applied to a polishing composition for obtaining an abrasive article other than a tantalum wafer. Specific examples of abrasive products other than silicon wafers It is a metal such as stainless steel, a plastic substrate, a glass substrate, a quartz substrate, or the like. Further, the components contained in the polishing composition may be appropriately changed depending on the polishing product.

〔實施例〕 [Examples]

以下藉由實施例說明本發明,但本發明並不限定於此。 Hereinafter, the present invention will be described by way of examples, but the invention is not limited thereto.

(比較例1) (Comparative Example 1)

首先,準備市售品之羥基乙基纖維素(HEC)粉末(重量平均分子量250,000(聚環氧乙烷換算),製品名:SE-400,Daicel精密化學股份有限公司製)。 First, a commercially available hydroxyethyl cellulose (HEC) powder (weight average molecular weight: 250,000 (in terms of polyethylene oxide), product name: SE-400, manufactured by Daicel Precision Chemical Co., Ltd.) was prepared.

以使HEC之濃度成為1質量%之方式將水添加於其中,且藉攪拌製造促進基板濕潤性組成物。 Water was added thereto so that the concentration of HEC became 1% by mass, and the substrate wettability promoting composition was produced by stirring.

(實施例1) (Example 1)

使用已進行上述步驟(C)所得之HEC製造促進基板濕潤性組成物。 The substrate wettability promoting composition was produced using the HEC obtained in the above step (C).

更詳細而言,首先使用市售品之HEC粉末(重量平均分子量250,000(聚環氧乙烷換算),製品名:SE-400,Daicel精密化學股份有限公司製),以使HEC之濃度成為1質量%之方式將水添加於其中,且藉攪拌製造纖維素衍生物溶液。 More specifically, a HEC powder (weight average molecular weight: 250,000 (polyethylene oxide), product name: SE-400, manufactured by Daicel Precision Chemical Co., Ltd.) of a commercial product is used first, so that the concentration of HEC becomes 1 Water is added thereto in a mass % manner, and a cellulose derivative solution is produced by stirring.

接著,使所得纖維素衍生物溶液通過填充有強酸性陽 離子交換樹脂(交換基:磺酸基,製品名:UBK-116,三菱化學股份有限公司製)之管柱,而去除源自纖維素衍生物之製造的雜質中所含之陽離子。 Next, the obtained cellulose derivative solution is filled with a strong acid cation. A column of an ion exchange resin (exchange group: sulfonic acid group, product name: UBK-116, manufactured by Mitsubishi Chemical Corporation) was used to remove cations contained in impurities derived from the production of the cellulose derivative.

以使HEC之濃度成為1質量%之方式調整所得纖維素衍生物溶液,製造促進基板濕潤性之組成物。 The obtained cellulose derivative solution was adjusted so that the concentration of HEC became 1% by mass, and a composition for promoting wettability of the substrate was produced.

(實施例2) (Example 2)

使用依序進行上述步驟(B)及(C)所得之HEC製造促進基板濕潤性組成物。 The HEC production-promoting substrate wettability composition obtained in the above steps (B) and (C) was sequentially used.

首先進行步驟(B)。 First, proceed to step (B).

具體而言,使用振動過篩機(製品名:電磁式過篩振動機,AS控制器,Retsch股份有限公司製)進行市售品之HEC粉末(重量平均分子量250,000(聚環氧乙烷換算),製品名:SE-400,Daicel精密化學股份有限公司製)之分級。此時,回收通過依據JIS之不銹鋼製試驗篩( 200mm×H45mm,開孔度100μm)者。 Specifically, a commercially available HEC powder (product weight average molecular weight 250,000 (polyethylene oxide equivalent)) was used using a vibrating screen machine (product name: electromagnetic sieve vibrating machine, AS controller, manufactured by Retsch Co., Ltd.). , product name: SE-400, classified by Daicel Precision Chemical Co., Ltd.). At this time, the recovery is passed through a stainless steel test sieve according to JIS ( 200mm × H45mm, opening degree 100μm).

接著進行步驟(C)。 Then proceed to step (C).

具體而言,除將市售品之HEC粉末變更為以步驟(B)分級之HEC粉末以外,餘以與實施例1同樣之方法進行步驟(C)。 Specifically, the step (C) was carried out in the same manner as in Example 1 except that the HEC powder of the commercial product was changed to the HEC powder classified in the step (B).

以使HEC之濃度成為1質量%之方式調整步驟(C)所得之纖維素衍生物溶液,製造促進基板濕潤性組成物。 The cellulose derivative solution obtained in the step (C) was adjusted so that the concentration of the HEC became 1% by mass to produce a substrate-wetting composition.

(實施例3) (Example 3)

使用依序進行上述步驟(A)及(C)所得之HEC製造促進基板濕潤性組成物。 The HEC production-promoting substrate wettability composition obtained in the above steps (A) and (C) was sequentially used.

首先,進行步驟(A)。 First, proceed to step (A).

具體而言,係使用市售品之HEC粉末(重量平均分子量250,000(聚環氧乙烷換算),製品名:SE-400,Daicel精密化學股份有限公司製),以使HEC之濃度成為1質量%之方式將水添加於其中,且藉攪拌製造纖維素衍生物溶液。 Specifically, a commercially available HEC powder (weight average molecular weight: 250,000 (polyethylene oxide), product name: SE-400, manufactured by Daicel Precision Chemical Co., Ltd.) was used to make the concentration of HEC 1 mass. In the manner of %, water was added thereto, and a cellulose derivative solution was produced by stirring.

接著,以聚丙烯製過濾器(開孔度:1μm,製品名:Profile II,日本Pall股份有限公司製)過濾所得之纖維素衍生物溶液。 Next, the obtained cellulose derivative solution was filtered with a polypropylene filter (opening degree: 1 μm, product name: Profile II, manufactured by Nippon Pall Co., Ltd.).

接著進行步驟(C)。 Then proceed to step (C).

具體而言,除了將使市售品之HEC粉末溶解於水中而成之纖維素衍生物溶液變更為以步驟(A)所得之濾液以外,餘以與實施例1同樣方法,進行步驟(C)。 Specifically, in the same manner as in Example 1, except that the cellulose derivative solution obtained by dissolving the commercially available HEC powder in water was changed to the filtrate obtained in the step (A), the step (C) was carried out in the same manner as in Example 1. .

以使HEC之濃度成為1質量%之方式調整步驟(C)所得之纖維素衍生物溶液(源自濾液),製造促進基板濕潤性組成物。 The cellulose derivative solution (derived from the filtrate) obtained in the step (C) was adjusted so that the concentration of the HEC became 1% by mass to produce a substrate-wetting composition.

(實施例4) (Example 4)

使用依序進行上述步驟(B)、(A)及(C)所得之HEC,製造促進基板濕潤性組成物。 The substrate-wettable composition was produced by sequentially performing the HEC obtained in the above steps (B), (A), and (C).

首先,進行步驟(B)。 First, proceed to step (B).

具體而言,以與實施例2同樣之方法獲得經分級之 HEC粉末。 Specifically, the classified method was obtained in the same manner as in Example 2. HEC powder.

接著,進行步驟(A)。 Next, the step (A) is carried out.

具體而言,除了將市售品之HEC粉末變更為以步驟(B)分級之HEC粉末以外,餘以與實施例3同樣之方法進行步驟(A)。 Specifically, the step (A) was carried out in the same manner as in Example 3 except that the HEC powder of the commercial product was changed to the HEC powder classified in the step (B).

最後,進行步驟(C)。 Finally, proceed to step (C).

具體而言,除了將使市售品之HEC粉末溶解於水中而成之纖維素衍生物溶液變更為本實施例之以步驟(A)所得之濾液以外,餘以與實施例1同樣之方法,進行步驟(C)。 Specifically, in the same manner as in Example 1, except that the cellulose derivative solution obtained by dissolving the commercially available HEC powder in water was changed to the filtrate obtained in the step (A) of the present Example, Carry out step (C).

以使HEC之濃度成為1質量%之方式調整步驟(C)所得之纖維素衍生物溶液(源自濾液),製造促進基板濕潤性組成物。 The cellulose derivative solution (derived from the filtrate) obtained in the step (C) was adjusted so that the concentration of the HEC became 1% by mass to produce a substrate-wetting composition.

(比較例2) (Comparative Example 2)

使用進行上述步驟(B)所得之HEC製造促進基板濕潤性組成物。 The substrate wettability promoting composition was produced using the HEC obtained in the above step (B).

更詳細而言,除了未進行步驟(C)以外,餘以與實施例2同樣之方法製造促進基板濕潤性組成物。 More specifically, a substrate-inducing wettable composition was produced in the same manner as in Example 2 except that the step (C) was not carried out.

(比較例3) (Comparative Example 3)

使用進行上述步驟(A)所得之HEC製造促進基板濕潤性組成物。 The substrate wettability promoting composition was produced using the HEC obtained by the above step (A).

更詳細而言,除了未進行步驟(C)以外,餘以與實 施例3同樣之方法製造促進基板濕潤性組成物。 In more detail, except that step (C) is not carried out, In the same manner as in Example 3, a substrate-inducing wettable composition was produced.

(比較例4) (Comparative Example 4)

使用依序進行上述步驟(B)及(A)所得之HEC,製造促進基板濕潤性組成物。 The substrate-wettable composition was produced by sequentially performing the HEC obtained in the above steps (B) and (A).

更詳細而言,除了未進行步驟(C)以外,餘以與實施例4同樣之方法製造促進基板濕潤性組成物。 More specifically, a substrate-improving substrate wettability composition was produced in the same manner as in Example 4 except that the step (C) was not carried out.

〔性能評價〕 [Performance Evaluation]

使用上述實施例1~4及比較例1~4中製造之促進基板濕潤性組成物,進行各種性能評價。 The substrate wettability-promoting materials produced in the above Examples 1 to 4 and Comparative Examples 1 to 4 were used to evaluate various properties.

(強熱殘分之測定) (Measurement of strong heat residue)

求出促進基板濕潤性組成物之強熱殘分。 The strong thermal residue of the substrate wettability promoting composition was determined.

具體而言,首先測定磁製缽之空重量。 Specifically, the empty weight of the magnetic crucible is first measured.

接著,將促進基板濕潤性組成物放置在105℃之恆溫乾燥器內24小時,獲得該組成物之乾燥物(以下稱為「測定試料」)。 Next, the substrate wettability-promoting composition was placed in a constant temperature drier at 105 ° C for 24 hours to obtain a dried product of the composition (hereinafter referred to as "measurement sample").

隨後,將約1g之測定試料投入磁製缽中且測定磁製缽之重量,由與磁製缽之空重量之差求出測定試料之重量(S(g))。 Subsequently, about 1 g of the measurement sample was placed in a magnetic crucible, and the weight of the magnetic crucible was measured, and the weight (S (g)) of the measurement sample was determined from the difference from the empty weight of the magnetic crucible.

接著,將硫酸3mL添加於磁製研缽內,以玻璃細棒攪拌。接著,使用電熱器加熱磁製缽,在測定試料不再產生白煙之時點結束加熱。隨後,以電爐使磁性缽在600℃ 加熱180分鐘。 Next, 3 mL of sulfuric acid was placed in a magnetic mortar and stirred with a glass rod. Next, the magnetic crucible was heated using an electric heater, and the heating was terminated when the measurement sample no longer produced white smoke. Subsequently, the magnetic crucible was placed at 600 ° C in an electric furnace. Heat for 180 minutes.

經空氣冷卻後,測定磁製缽之重量,由與磁製缽之空重量之差測定灰分之重量(W(g)),且藉下述式(1)算出強熱殘分(重量%)。 After air cooling, the weight of the magnetic crucible was measured, and the weight of the ash (W (g)) was determined from the difference between the empty weight of the magnetic crucible, and the strong heat residue (% by weight) was calculated by the following formula (1). .

〔數1〕強熱殘分(重量%)=100×W/S (1) [Number 1] Strong heat residue (% by weight) = 100 × W / S (1)

上述式(1)中,S為測定試料重量(g),W為灰分重量(g)。 In the above formula (1), S is a measured sample weight (g), and W is an ash weight (g).

又,前述灰分包含源自難溶性之無機鹽、凝聚物、未反應之纖維素等雜質之灰分。 Further, the ash contains ash derived from impurities such as poorly soluble inorganic salts, aggregates, and unreacted cellulose.

(鎂含量及鈣含量之測定) (Measurement of magnesium content and calcium content)

求出促進基板濕潤性組成物(親水性成分:1質量%)中之鎂含量及鈣含量。 The magnesium content and the calcium content in the substrate wettability composition (hydrophilic component: 1% by mass) were determined.

具體而言,所製造之促進基板濕潤性組成物使用ICPS-8100(島津製作所股份有限公司製)作為測定裝置,以感應耦合高頻電漿分光分析法(ICP-AES)求出促進基板濕潤性組成物中之鎂含量及鈣含量。此時,求出n=3之平均值,小數點以下四捨五入。 Specifically, the substrate-wettable composition was produced using ICPS-8100 (manufactured by Shimadzu Corporation) as a measuring device, and inductively coupled high-frequency plasma spectrometry (ICP-AES) was used to determine the wettability of the substrate. Magnesium content and calcium content in the composition. At this time, the average value of n=3 is obtained, and the decimal point is rounded off.

(LPC之測定) (Measurement of LPC)

測定促進基板濕潤性組成物中之LPC(大顆粒數 (Large Particle Count))。此處係測定促進基板濕潤性組成物中存在之0.7μm以上之粗大粒子之數。 Determination of LPC (large particle number) in the substrate wettability composition (Large Particle Count)). Here, the number of coarse particles of 0.7 μm or more which are present in the substrate wettability composition is measured.

具體而言,使用Accusizer(註冊商標)FX(美國Particle Sizing Systems公司製)作為測定裝置,測定LPC。此時,求出n=3之平均值,且小數點以下四捨五入。 Specifically, LPC was measured using Accusizer (registered trademark) FX (manufactured by Particle Sizing Systems, USA) as a measuring device. At this time, the average value of n=3 is obtained, and the decimal point is rounded off.

實施例1~4及比較例1~4之性能評價結果示於下表1。 The performance evaluation results of Examples 1 to 4 and Comparative Examples 1 to 4 are shown in Table 1 below.

由表1之比較例1之結果,針對此次使用之HEC粉末,所得之促進基板濕潤性組成物中之強熱殘分之量、鈣量、及鎂量較多。且,促進基板濕潤性組成物中之0.7μm以上之LPC之個數亦較多。 From the results of Comparative Example 1 of Table 1, the amount of the strong heat residue, the amount of calcium, and the amount of magnesium in the substrate wettability composition were increased for the HEC powder used this time. Further, the number of LPCs of 0.7 μm or more in the substrate wettability composition is also increased.

因此,比較例1之促進基板濕潤性組成物有無法獲得 優異濕潤性之可能性。且,比較例1之促進基板濕潤性組成物使用於例如矽晶圓等基板之研磨時,因促進基板濕潤性組成物中含有雜質,故可理解會有經研磨之基板上發生LPD等缺陷之可能性。 Therefore, the substrate-wettable composition of Comparative Example 1 was not obtained. The possibility of excellent wettability. Further, when the substrate-wettable composition of Comparative Example 1 is used for polishing a substrate such as a tantalum wafer, since the substrate wettability-promoting composition contains impurities, it is understood that defects such as LPD may occur on the polished substrate. possibility.

又,對比比較例1、實施例1~4時,可理解藉由進行去除或減低纖維素衍生物中雜質之步驟,而減低了強熱殘分之量、鈣量及鎂量,故上述雜質大多係源自纖維素衍生物之製造者。 Further, when comparing Comparative Example 1 and Examples 1 to 4, it is understood that the amount of the strong heat residue, the amount of calcium, and the amount of magnesium are reduced by the step of removing or reducing impurities in the cellulose derivative, so the above impurities Most are derived from the manufacturer of cellulose derivatives.

由表1之實施例1~4與比較例2~4之對比,可理解藉由步驟(C)亦即去除源自纖維素衍生物之製造的雜質中所含陽離子之步驟,去除了大部分雜質。因此,針對此次使用之HEC粉末,能理解為難溶性之無機鹽係構成雜質之大部分。 From the comparison of Examples 1 to 4 of Table 1 with Comparative Examples 2 to 4, it can be understood that most of the steps of removing the cations contained in the impurities derived from the production of the cellulose derivative by the step (C) are removed. Impurities. Therefore, it is understood that the HEC powder used this time is a large part of impurities which are poorly soluble inorganic salts.

此外,由表1之實施例1及2與實施例3及4之結果之對比,可理解藉由包含步驟(A),亦即溶解過濾纖維素衍生物之步驟,能有意地減低LPC之個數。因此,使用利用經過步驟(A)之纖維素衍生物的促進基板濕潤性組成物,在例如研磨基板時,有可防止因粗大粒子產生之LPD之可能性。且,由表1之實施例2及4之結果之對比,可理解藉由包含步驟(A),強熱殘分、鈣含量、鎂含量及LPC均被減低。 In addition, from the comparison of the results of Examples 1 and 2 of Table 1 with the results of Examples 3 and 4, it can be understood that by including the step (A), that is, the step of dissolving and filtering the cellulose derivative, the LPC can be intentionally reduced. number. Therefore, the use of the substrate-wettable composition which utilizes the cellulose derivative of the step (A) is used, and for example, when the substrate is polished, there is a possibility that LPD due to coarse particles can be prevented. Further, from the comparison of the results of Examples 2 and 4 of Table 1, it is understood that by including the step (A), the strong heat residue, the calcium content, the magnesium content, and the LPC are all reduced.

再者,由表1之實施例3及4之結果之對比,可理解藉由包含步驟(B),亦即將纖維素衍生物分級之步驟,強熱殘分、鈣含量、鎂含量及LPC全部均被減低。 Furthermore, from the comparison of the results of Examples 3 and 4 of Table 1, it can be understood that by including the step (B), the step of classifying the cellulose derivative, the strong heat residue, the calcium content, the magnesium content and the LPC all. Both are reduced.

又,本申請案係基於2012年12月17日申請之日本專利申請案第2012-274893號及2012年12月26日申請之日本專利申請案第2012-283170號,其揭示內容藉由參照全文被引用。 Further, the present application is based on Japanese Patent Application No. 2012-274893, filed on Dec. 17, 2012, and Japanese Patent Application No. 2012-283170, filed on Dec. Quoted.

Claims (6)

一種促進基板濕潤性組成物,其包含以纖維素衍生物作為主成分之親水性成分、與溶劑成分,且源自前述纖維素衍生物之製造的雜質為0.1質量%以下。 A substrate-wetting composition comprising a hydrophilic component containing a cellulose derivative as a main component and a solvent component, and impurities derived from the production of the cellulose derivative are 0.1% by mass or less. 如請求項1之促進基板濕潤性組成物,其中前述雜質包含鎂及鈣之至少一者,前述鎂及鈣之至少一者之含量相對於前述促進基板濕潤性組成物之總量為15ppb以下。 The substrate-wettable composition according to claim 1, wherein the impurity contains at least one of magnesium and calcium, and the content of at least one of the magnesium and the calcium is 15 ppb or less based on the total amount of the substrate-wettable composition. 一種研磨用組成物,其包含如請求項1或2之促進基板濕潤性組成物、二氧化矽粒子、與鹼性化合物。 A polishing composition comprising the substrate-improving substrate wettable composition according to claim 1 or 2, cerium oxide particles, and a basic compound. 一種研磨用組成物,其包含以纖維素衍生物作為主成分之親水性成分、二氧化矽粒子、鹼性化合物、與溶劑成分,且雜質為0.1質量%以下。 A polishing composition comprising a hydrophilic component containing a cellulose derivative as a main component, cerium oxide particles, a basic compound, and a solvent component, and the impurities are 0.1% by mass or less. 如請求項4之研磨用組成物,其中前述雜質包含鎂及鈣之至少一者,前述鎂及鈣之至少一者之含量相對於前述研磨用組成物之總量為10ppb以下。 The polishing composition according to claim 4, wherein the impurities include at least one of magnesium and calcium, and the content of at least one of the magnesium and the calcium is 10 ppb or less based on the total amount of the polishing composition. 一種基板之製造方法,其包含以如請求項3~5中任一項之研磨用組成物研磨基板。 A method of producing a substrate, comprising: polishing a substrate with the polishing composition according to any one of claims 3 to 5.
TW102145882A 2012-12-17 2013-12-12 Substrate wettability-promoting composition, polishing composition containing same, and method for producing substrates using same TW201434899A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012274893 2012-12-17
JP2012283170A JP6038640B2 (en) 2012-12-17 2012-12-26 Substrate wettability promoting composition, polishing composition containing the same, and method for producing a substrate using the same

Publications (1)

Publication Number Publication Date
TW201434899A true TW201434899A (en) 2014-09-16

Family

ID=50978222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102145882A TW201434899A (en) 2012-12-17 2013-12-12 Substrate wettability-promoting composition, polishing composition containing same, and method for producing substrates using same

Country Status (3)

Country Link
JP (1) JP6038640B2 (en)
TW (1) TW201434899A (en)
WO (1) WO2014097887A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727052B (en) * 2016-06-06 2021-05-11 日商富士軟片股份有限公司 Polishing agent, method for chemical mechanical polishing
TWI755060B (en) * 2019-11-15 2022-02-11 日商Jsr股份有限公司 Chemical mechanical polishing composition and chemical mechanical polishing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6444680B2 (en) * 2014-09-30 2018-12-26 Hoya株式会社 Manufacturing method of substrate, manufacturing method of substrate with multilayer reflective film, manufacturing method of mask blank, and manufacturing method of transfer mask
JP6873685B2 (en) * 2016-12-26 2021-05-19 ニッタ・デュポン株式会社 Polishing composition
JPWO2020009055A1 (en) * 2018-07-04 2021-08-05 住友精化株式会社 Polishing composition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4052607B2 (en) * 1998-04-20 2008-02-27 株式会社東芝 Polishing agent and method for polishing semiconductor substrate
JP4912592B2 (en) * 2002-11-08 2012-04-11 株式会社フジミインコーポレーテッド Polishing composition and method of using the same
JP4808394B2 (en) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド Polishing composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727052B (en) * 2016-06-06 2021-05-11 日商富士軟片股份有限公司 Polishing agent, method for chemical mechanical polishing
TWI755060B (en) * 2019-11-15 2022-02-11 日商Jsr股份有限公司 Chemical mechanical polishing composition and chemical mechanical polishing method

Also Published As

Publication number Publication date
JP6038640B2 (en) 2016-12-07
WO2014097887A1 (en) 2014-06-26
JP2014139258A (en) 2014-07-31

Similar Documents

Publication Publication Date Title
TW373015B (en) Brightener compsn.
TWI512065B (en) Slurry, polishing fluid set, polishing fluid and polishing method of substrate
TWI624537B (en) Grinding composition and method for producing the same
TW201434899A (en) Substrate wettability-promoting composition, polishing composition containing same, and method for producing substrates using same
JP7326166B2 (en) cerium particles
JP6105916B2 (en) Cellulose derivative composition, polishing composition using the cellulose derivative composition, method for producing the polishing composition, and method for producing a substrate using the polishing composition
JPH11116942A (en) Abrasive composition
JPH10309660A (en) Finishing abrasive
JPWO2013125445A1 (en) Abrasive, abrasive set, and substrate polishing method
JP6279593B2 (en) Polishing composition, method for producing polishing composition, and method for producing silicon wafer
TWI582184B (en) Polishing composition, method for producing polishing composition, undiluted solution, method for producing silicon substrate, and silicon substrate
TWI650408B (en) Polishing composition, method for producing polishing composition, method for producing silicon substrate, and silicon substrate
WO2013175854A1 (en) Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
TWI576418B (en) Slurry, polishing fluid set, polishing fluid, method for polishing substrate and substrate
CN115244659A (en) Polishing composition and polishing method
TW201402734A (en) Method for producing polishing composition
TW201922617A (en) Dispersion of silica particles and method for producing said dispersion
TW201412962A (en) Polishing composition, method for producing the polishing composition, and method for producing semiconductor substrate using the polishing composition
JP2014038906A (en) Polishing composition, polishing composition manufacturing method and semiconductor substrate manufacturing method using polishing composition
TW201422797A (en) Method for producing polishing composition and polishing composition
JP7129576B1 (en) Colloidal silica and method for producing the same
WO2023119549A1 (en) Colloidal silica and production method therefor
JP6295052B2 (en) Polishing composition, method for producing polishing composition, and method for producing silicon wafer
JP2000109804A (en) Polishing agent for cmp and polishing of substrate
TW202330820A (en) Method for producing polishing composition comprising modified polyvinyl alcohol composition, and polishing composition comprising modified polyvinyl alcohol composition