TW201430916A - Ion implanter and ion implant method thereof - Google Patents

Abstract

An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Description

Ion implanter and ion implantation method thereof

The present invention relates to an ion implanter and an ion implantation method, and more particularly to implanting a wafer by moving wafers and holes together, and the holes are used to adjust an ion beam before implanting the wafer. When a ribbon ion beam is used, the shape/size of the hole can be selectively similar to a conventional spot beam, the angle of incidence between the wafer and the ion beam can be selectively fixed, and the hole can be selectively visible. Less than the cross section of the ion beam.

Ion implantation is a common and important processing step in semiconductor manufacturing. The wafer is implanted by an ion beam. The ion beam can be a point ion beam or a ribbon ion beam, and the implanted wafer has a special implant distribution, whether it is a uniform implant dose distribution or a non-uniform implant dose distribution (eg one has Different implant doses or wafers of different implanted areas of different shapes or sizes).

The first A diagram shows a simplified schematic of a conventional ion implanter 100. The conventional ion implanter 100 includes an ion source 110 and an analytical magnet 120. The ion source 110 is used to generate ions, and the analysis magnet 120 is used to screen out ions from the ion beam that do not have the desired charge-to-mass ratio before implanting the wafer 10. Although not specifically shown, there may be some electrodes and some magnets located between the analysis magnet 120 and the wafer 10 to accelerate or decelerate the ion beam before implanting the wafer, change the shape of the ion beam, and or adjust the ion beam. Other properties.

The first B diagram shows a top plan view of the wafer 10 in the first A diagram. There are several commonly used ion implantation methods that allow the ion beam 20 to be properly implanted on the wafer 10. If the wafer 10 is stationary, the ion beam 20 can move in a plane defined by the X and Y axes. If the ion beam 20 is stationary, the wafer 10 can move in a plane defined by the X and Y axes. In addition, the ion beam 20 and the wafer 10 can also move in different directions on the plane defined by the X-axis and the Y-axis.

The concept of a fixed ion beam means that the ion beam system does not scan the space near the adjacent wafer in a fixed ion beam path direction, in other words, at least a portion of the ion beam path at the adjacent wafer is fixed. In this case, the wafer moves through the ion beam and even along the ion beam to ensure proper implantation. The scan path and scan speed are adjustable parameters depending on the implant dose distribution required on the wafer. At the same time, depending on the implant dose distribution required on the wafer, the point ion beam and the ribbon ion beam can be used flexibly. In addition, depending on whether a point ion beam or a ribbon ion beam is used, the scanning path and scanning speed can be elastically adjusted.

However, as the size of the wafer increases, the wafer must also move a correspondingly longer distance to ensure that the entire wafer is properly implanted by the ion beam, so the weight of the wafer also needs to increase correspondingly. For example, when the length of the particle beam is fixed at H and the thickness of the wafer is fixed, in order to ensure uniform implantation of the entire wafer, the minimum moving distance of the wafer of diameter R along the length of the ion beam is the difference between R and H. The value, in other words, RH, but the minimum moving distance of the wafer of diameter 2R along the length of the ion beam is the difference between 2R and H, in other words, 2R-H. Obviously, the former must move a wafer a distance (R-H) from its support mechanism of weight W, but the latter must move a wafer a long distance (2R-H) from a support mechanism with a larger weight of ~4W. Undoubtedly, the energy required to move the wafer needs to be increased, and even the hardware cost and operational complexity of the mechanism for moving the wafer are correspondingly increased. These shortcomings can become more severe for next-generation wafers with a diameter of about 450 mm (or 18 inches).

Of course, one solution is to increase the length of the ion beam, especially the uniform size of the ion beam. Thereby, the required moving distance of the wafer can be reduced, even if the length of the ion beam is larger than the diameter of the wafer. However, increasing the length of the ion beam generally means a higher ion implanter hardware cost and operational complexity, and may reduce ion beam uniformity. These shortcomings can become more severe for next-generation wafers with a diameter of about 450 mm (or 18 inches). In addition, in some specific cases, such as wafers having different implanted areas, each implanted area has individual implant doses or even different shapes or sizes or implant depths, a point ion beam or a shorter ribbon ion beam It may be convenient and useful.

Another solution is to move the wafer only in the direction of the ion beam width but to move the ion beam along the length of the ion beam, and another solution is to fix the wafer but move the ion beam along the length and width of the ion beam. Since the wafer is no longer moving along the length of the ion beam, the aforementioned disadvantages can be avoided. However, when the ion beam is oscillated on the wafer, the angle of incidence between the implanted ion beam and the surface of the wafer changes with different portions of the wafer. In this case, it is difficult to precisely control the properties of the wafer implant, and the distribution of implanted ions in the wafer may be uneven in different portions of the wafer. Therefore, during the scanning of the ion beam on the wafer, even if the ion beam moves on the wafer at a uniform speed and the ion beam current of the ion beam is continuously stable, the result of the implantation on the wafer is difficult to precisely control and is uneven. In general, one or more additional steps and or additional devices are required to precisely control the implantation on the wafer. For example, when the ion beam is implanted vertically, a mask having a hole moves synchronously with the ion beam, wherein the shape and size of the hole is almost equal to the projected area of the ion beam on the wafer. Thus, when the ion beam is not implanted vertically, the mask can adjust the edge portion of the ion beam, and only the central portion of the ion beam is implanted into the wafer. In addition, in order to keep the central portion of the ion beam fixed at different angles of incidence, a mask with adjustable holes may be selected. However, the use of a mask inevitably increases the hardware cost and operational complexity, especially the use of a mask with adjustable holes.

Due to the above shortcomings, it is necessary to propose a novel ion implanter and a novel ion implantation method to implant a wafer.

The present invention provides a novel solution for implanting wafers. According to one feature of the present invention, the two-dimensional movement of a conventional wafer can be replaced by a combination of one-dimensional movement of the wafer and one-dimensional movement of a hole mechanism having a hole for adjusting before implanting the wafer. Ion beam.

Reasonably, when the hole moves along the long direction of the uniform large ribbon ion beam (in other words, the ion beam length direction) and the wafer moves in a direction intersecting the other long direction (for example, the ion beam width direction), especially When the shape/size of the hole is close to a conventional spotted ion beam, the combination of wafer movement and hole movement is like a conventional two-dimensional wafer scan using a spotted ion beam, even if the ion beam is a ribbon ion beam. Wafer movement and hole movement can be performed alternately, simultaneously, or in any elastic order. In this case, even if a ribbon ion beam is provided, the actual implantation on the wafer can still approximate the implantation of a point ion beam, since the hole only allows a portion of the ribbon ion beam to be usually a band. A uniform portion of the ion beam passes through to implant into the wafer.

Note that this feature is independent of whether the ion beam path is fixed or oscillating during the passage of the ion beam through the wafer. The only condition is that the ion beam can be adjusted by the hole during this time.

In addition, the ion beam can be fixed as the wafer moves, so the disadvantages caused by different ion beam incident angles on different portions of the wafer can be improved. At the same time, the area of the hole can also be significantly smaller than the cross-sectional area of the ion beam, so that the size of the hole can be changed by the change of the size and shape of the hole during the implantation to make the implant on the wafer elastically adjustable.

An embodiment of the invention is an ion implantation method. First, a wafer, a ribbon ion beam, and a hole mechanism having a hole are provided. Next, a ribbon mechanism is used to adjust the ribbon ion beam to implant a portion of the ribbon ion beam through the aperture. A two-dimensional wafer scan is then achieved using wafer movement and hole movement. In general, the shape and size of the hole can be approximated by the shape and size of the spotted ion beam. Generally, the wafer moves in the short direction of a ribbon ion beam and the holes move along the long direction of the ribbon ion beam, and the wafer movement and the hole movement can be alternated but can also be performed simultaneously. In general, for each movement of the hole, the distance of travel along the long direction of the ribbon ion beam is not greater than the dimension of the longitudinal direction of the ribbon ion beam each time the hole moves.

Another embodiment of the invention is still an ion implantation method. First, a wafer, an ion beam, and a hole mechanism having a hole for adjusting the ion beam before implanting the wafer are provided. Next, the wafer is moved in a first direction and the hole mechanism is moved in a second direction that intersects the first direction such that the projected area of the ion beam scans the wafer in a two-dimensional scan. Wherein at least one of: (1) controlling the direction of movement of the wafer such that the angle of incidence between the wafer and the ion beam during the movement of the wafer through the ion beam is fixed; and (2) moving the ion through the wafer The area of the hole maintained during the beam is significantly smaller than the cross-sectional area of the ion beam.

Another embodiment of the invention is an ion implanter. The ion implanter includes an ion beam assembly, a wafer drive mechanism, a hole mechanism, and a hole drive mechanism. The ion beam assembly is used to generate an ion beam, the wafer drive mechanism is used to move a wafer in a first direction, and the hole mechanism has a hole for adjusting the ion beam prior to implanting the wafer. The hole drive mechanism is for moving the hole mechanism in a second direction that intersects the first direction. Wherein the direction of movement of the wafer is perpendicular to the ion beam such that the angle of incidence between the wafer and the ion beam is fixed, in other words, the angle of incidence is the same across different portions of the wafer as the wafer moves through the ion beam. Therefore, when the wafer and the hole mechanism move in the first direction and the second direction, respectively, the projection area of the ion beam scans the wafer in a two-dimensional scanning manner.

Yet another embodiment of the invention is an ion implanter. The ion implanter includes an ion beam assembly, a wafer drive mechanism, a hole mechanism, and a hole drive mechanism. The functions of these elements of the ion implanter are the same as in the previous embodiment except for two points: (1) The area of the hole is adjustable between the movement of the hole mechanism through the ion beam or during the movement of any hole mechanism through the ion beam. And (2) the ion beam may be non-fixed during movement of the wafer through the ion beam.

Some embodiments of the invention are described in detail below. However, the present invention may be widely practiced in other embodiments than the following description, and the scope of the present invention is not limited by the examples, which are subject to the scope of the following patents. Further, in order to provide a clearer description and a better understanding of the present invention, the various parts of the drawings are not drawn according to their relative dimensions; the irrelevant details are not fully drawn to simplify the drawings.

Figure 2A shows a schematic cross-sectional view of an ion implanter 200 in accordance with an embodiment of the present invention. The ion implanter 200 includes an ion source 210, an analysis magnet 220, a wafer drive mechanism 230 (eg, an actuator), a hole mechanism 240 (eg, a panel), and a hole drive mechanism 250 (eg, a driver, an advancer). ). The ion source 210 can generate an ion beam. Analytical magnet 220 can filter ions from ion beam 20 without the desired charge-to-mass ratio. Although not specifically shown, there are typically electrodes and magnets located between the analysis magnet 120 and the wafer 10 to accelerate or decelerate the ion beam prior to implantation of the wafer, to change the shape of the ion beam, and to adjust the ion beam. Other properties. Since the function is to create an ion beam for implanting a wafer, the combination of ion source 210 and analytical magnet 220, even this combination comprising these electrodes and or magnets, can be considered an ion beam assembly. The aperture mechanism 240 has an aperture 241 for adjusting the ion beam such that only a portion of the ion beam can be implanted onto the wafer 10. In addition, the wafer driving mechanism 230 and the hole driving mechanism 250 are respectively used to move the wafer 10 and the hole mechanism 240 in different directions. Please note that this embodiment does not limit the detailed structure of the wafer driving mechanism 230 and the hole driving mechanism 250, and this embodiment only limits its function. Thus, the second A diagram only shows the presence of the above structure without providing specific details, such as the location or size of the above structure.

The second B diagram and the second C diagram respectively show a schematic cross-sectional view and a top view of the hole mechanism 240 in the second A diagram. The X axis, the Y axis, and the Z axis are perpendicular to each other. The wafer drive mechanism 230 is used to drive the wafer 10 along the X axis. The hole drive mechanism 250 is used to drive the hole mechanism 240 such that the hole 241 moves along the Y axis. The path of the ion beam 20 is fixed along the Z-axis direction, and the ion beam path at least partially adjacent to the wafer 10 and the hole 241 is fixed in the Z-axis direction. Therefore, by the movement of the wafer 10 and the holes 241 (for example, the movement of the hole mechanism 240), the two-dimensional scanning of the projected area of the ion beam 20 on the wafer 10 on the wafer 10 can be achieved. Please note that this embodiment does not limit the details of the ion beam 20 and the holes 241, and this embodiment only limits its relative relationship. Therefore, the second B diagram and the second C diagram only show the existence of the above structure without limiting the specific details, for example, the shape or size of the above structure.

Reasonably, the implantation results achieved by conventional 2D wafer scanning on a wafer can be achieved identically by simultaneously utilizing the movement of the wafer and the holes. First, a ribbon ion beam is adjusted by the hole mechanism so that only a special portion of the ribbon ion beam can pass through the hole. In other words, the zonal ion beam can be generated by adjusting the ribbon ion beam by the hole. In other words, even if the ion beam assembly always produces a ribbon ion beam, a hole device can be used to form a spot ion beam implant wafer. The wafer is then moved through the ion beam (in the direction of the ion beam width) such that the first portion of the wafer is implanted by a spotted ion beam (eg, a ribbon ion beam passes through a particular portion of the hole). Thereafter, the holes are moved along the ion beam (in the length of the ion beam) such that another particular portion of the ribbon ion beam can be used as another spotted ion beam for implantation. Of course, if the ribbon ion beam has a relatively large uniform portion, the two-point ion beam can function as the same spot ion beam at different locations relative to the wafer. The wafer is then moved again through the ion beam (in the direction of the ion beam width) such that a second portion of the wafer is implanted by another spotted ion beam. Reasonably, by repeating the step of moving the wafer through the ion beam and moving the hole through the ion beam, the implantation of the wafer (at least one desired implanted area on the wafer) can be considered as a The ion beam performs a two-dimensional wafer scan to implant the wafer (at least one area of the wafer to be implanted).

Undoubtedly, when the length of a desired implanted area on the wafer is equal to or less than the ion beam length of the ribbon ion beam, or at least not greater than the length of the uniform portion of the ribbon ion beam, the 2D wafer may only This is achieved by the simultaneous movement of the wafer and the hole. In other words, the wafer does not move along the ribbon beam (along the length of the ion beam). The advantages are significant because the hardware used to move the wafer along the length of the ion beam and its operation are used to replace the hard body moving the hole mechanism along the length of the ion beam with its operation. Since the function of the hole mechanism is only to provide a hole, it can be only a plate having a hole (for example, a hole), and at most some movable plates to form a variable hole. Thus, the hardware or operation required to move the hole mechanism can be low cost, low energy, in comparison to the hardware or operation required to move a heavy wafer support assembly, such as a tilt and torsion mechanism plus a cooling or heating mechanism. Consumption, low operational complexity, low maintenance requirements, etc. Obviously, the wafer diameter of the next generation is about 450 mm (or 18 inches), which is more significant because the increase in wafer weight is faster than the increase in wafer diameter.

These advantages of the present invention can be more profoundly highlighted as compared to the prior art described above.

For one of the prior art, the wafer is moved in a plane perpendicular to the ion beam, in other words, the plane is defined by both the ion beam length direction and the ion beam width direction. In contrast, in an embodiment of the invention, the wafer is moved along the ion beam width direction (X-axis) and the holes 241 (or as the hole mechanism 240) are moved along the ion beam length direction (Y-axis). Since the size of the hole 241 is smaller than the cross section of the ion beam 20, the size of the hole mechanism 240 may be only slightly larger than the cross section of the ion beam 20. Since the hole mechanism 240 is only used to provide the holes 241 and block a portion of the ion beam 20, and the other portions of the ion beam 20 pass through the holes 241, the structure of the hole mechanism 240 can be very simple and light weight. Thus, the hole drive mechanism 250 for moving the hole mechanism 240 (or as the hole 241) along the length of the ion beam (Y-axis) can be significantly more advanced than the prior art using a mechanism for moving the wafer 10 along the length of the ion beam. Simple, even cheaper and lower energy consumption.

For another prior art, the ion beam is moved (e.g., oscillated) in a plane perpendicular to the direction of the ion beam (Z-axis), in other words, the plane is defined by both the ion beam length direction and the ion beam width direction. Obviously, since the ion beam moves across the wafer, the angle of incidence between the ion beam 20 and the wafer 10 varies between different portions of the implanted wafer, thereby distributing the distribution of implanted ions within the wafer. Not uniform. In addition, the cost and operating system of the hardware required to move (oscillate) the ion beam in two dimensions is inevitable. In contrast, in the embodiment of the present invention, the ion beam 20 is fixed in the ion beam direction (Z-axis), but the wafer 10 and the hole mechanism 240 (or the hole 241) are respectively moved in different directions. Therefore, the incident angle can be constant on the implanted wafer, and the hardware and operation required for moving the ion beam in two dimensions can be avoided.

For another prior art, the wafer and the ion beam system are respectively moved in different directions in a plane perpendicular to the ion beam direction (Z axis) while having a fixed hole (the shape and size of the hole is almost equal to the ion beam) The mask of the cross section) moves in synchronism with the ion beam. Since the wafer and the ion beam system move separately, the disadvantages of the previous two prior art can be reduced or even avoided, and since the mask can adjust the edge portion of the ion beam and allow only the central portion of the ion beam to be implanted into the wafer, incidence The variation in the angle between the different parts of the implanted wafer can also be reduced. Despite this, moving masks require additional cost and how to coordinate the movement of the mask and ion beam poses technical challenges. Furthermore, even with the use of a mask, ion beam divergence due to ion beam movement, such as oscillations before and after the ion beam, still exists and the spatial distribution of the implanted ions will still vary between different parts of the implanted wafer. In contrast, in an embodiment of the invention, the ion beam path is fixed (at least the ion beam path adjacent to the wafer 10 is fixed) and the movement of the wafer 10 is controlled to ensure incidence between the ion beam 20 and the wafer 10. The angle is fixed. It is therefore natural to avoid the divergence of the ion beam 20 such that the spatial distribution of the implanted ions between different portions of the implanted wafer is the same. Moreover, in an embodiment of the invention, the movement of the aperture mechanism 240 is independent of the movement of the ion beam 20 (actually the ion beam is stationary). Meanwhile, in the embodiment of the present invention, the size of the hole 241 is not limited to being only equal to the cross-sectional size of the ion beam 20, and the size or shape of the hole 241 may be elastically adjusted to pass a special portion of the ion beam 20, but not As described in the prior art, the ion beam 20 is always passed all the way or the central portion of the ion beam 20 is completely passed.

Furthermore, other embodiments of the invention are possible. For example, the size or shape of the hole can approximate a conventional point ion beam, so the hole can be used to adjust a ribbon ion beam to achieve a conventional two-dimensional wafer scan. However, when a hole can be used to adjust the ion beam, the present invention does not actually limit the change in the size or shape of the hole. For some variations, the area of the hole is significantly smaller than the cross-sectional area of the ribbon ion beam, at least during the movement of the hole across the ribbon beam. For some variations, the area of the hole is approximately equal to the cross-sectional area of the ribbon ion beam, or at least the area of the hole during the movement of the hole across the ribbon ion beam is approximately equal to the cross-sectional area of the ribbon ion beam. For some variations, the area of the holes is adjustable, even during the movement of the holes across the ribbon beam to produce a uniform or non-uniform distribution of the distribution on the wafer.

Meanwhile, although a ribbon ion beam is used in the foregoing embodiment, the characteristics of the ion beam adjusted by the holes are not limited thereto. For some variations, the ion beam can be a conventional spotted ion beam, and the area of the holes is smaller than the cross-sectional area of the spotted ion beam. For some variations, the ion beam can be a slightly adjusted ion beam with a non-uniform ion beam current distribution, while the holes are only used to pass a uniform portion of the ion beam to enter the implanted wafer.

In addition, the "fixed ion beam" feature is proposed to fix the angle of incidence between the ion beam and the wafer, particularly the ion beam that is adjusted or adjusted by the hole device. Therefore, a selective change in this characteristic is to control the movement of the wafer, such as the tilt of the wafer, such that the angle of incidence is fixed during movement of the wafer through the ribbon beam. In this selective change, no matter whether the ion beam is fixed or the ion beam path is fixed, the relative geometric relationship between the ion beam and the wafer, especially the relative geometry seen on the wafer implant surface, is not limited. The relationship is limited to maintain an incident angle of a fixed value during movement of the wafer across the ribbon beam.

It must be noted that the three constraints of "banded ion beam", "fixed ion beam", and "holes smaller than the cross section of the ion beam" are independent of each other. The ribbon ion beam can be provided by adjusting the operation of the ion beam assembly. The fixed ion beam can be provided by the operation of the fixed ion beam assembly and or by adjusting the operation of the hole moving mechanism, and the holes smaller than the ion beam cross section can be adjusted. The hole mechanism and or by using different hole mechanisms. Thus, for different embodiments of the present invention, it may be selected to have only one of the above-described restrictions, while using any of the above two restrictions, or using all three of the constraints simultaneously.

Although the second to second C-pictures show the case where the moving direction of the wafer 10 is perpendicular to the moving direction of the hole 241, the present invention is not limited thereto. In fact, only wafer 10 and wafer 10 need to be moved in different directions.

Additionally, wafer 10 can be selectively moved at a first speed and aperture mechanism 240 can be moved at a second speed. Wherein, the first speed is independent of the second speed, and the first speed and the second speed are both adjustable. Thus, the adjusted ion beam projection area can be scanned through different portions of the wafer 10 at different speeds such that different portions of the wafer 10 are scanned at different speeds. The optional steps described above are valuable when it is desired to perform non-uniform implantation of the wafer 10, or when different scan rates are important factors for implantation on the wafer 10.

Additionally, one or more scan paths and scan speeds of the projected area of the ion beam 20 on the wafer 10 can be selectively adjustable. In other words, one or more movements of the wafer 10 and movement of the holes 241 are adjustable regardless of the direction of movement and or the distance of movement. Therefore, depending on the implant dose distribution required on the wafer 10, the scan path and scan speed can be adjusted accordingly.

Finally, the timing control of the different portions of the wafer 10 can be achieved separately. It is well known that different scan rates of the ion beam 20 through the projected regions of different portions of the wafer 10 may have different effects on the semiconductor structure formed on the wafer 10. Therefore, as described above, when the size of the projected area of the adjusted ion beam 20 is smaller than the size of the ion beam 20, the effect of the implantation speed of different portions on the wafer 10 can be easily adjusted.

Typically, the scan speed, scan path, and/or other scan parameters are calculated based on the assumption that the entire hole 241 is filled with the ion beam 20, and that the entire adjusted ion beam 20 (in other words, the partial ion beam 20 passing through the hole 241) is implanted. To wafer 10. The above assumption is almost correct when the hole 241 is located above the wafer 10. However, when the holes 241 are located near both ends of the cross section of the ion beam 20, the holes 241 may not be completely filled by the ion beam. And when the hole 241 is near the edge of the wafer 10, the adjusted ion beam passing through the hole 241 may not be completely projected onto the wafer 10. In this case, the scan speed, scan path, and/or other scan parameters are corrected based on the actual ion beam passing through the aperture 241 and reaching the wafer 10 to provide a parameter commonly referred to as an "edge correction factor."

Furthermore, it is well known that holes can be used to adjust the ion beam that is implanted onto the wafer, wherein the holes have a fixed shape and are in a fixed position. Therefore, the details of the hole 241 are not described in detail herein, and only a brief introduction is made to the main features. For example, the shape of the aperture 241 can be adjusted to ensure that the ion beam current distribution of the adjusted ion beam 20 gradually decreases to zero at the edge of the aperture 241, or that the ion beam current distribution of the adjusted ion beam 20 has a Gaussian distribution. As a typical example, the shape of the hole 241 may include one or more of the following (combined or complex shapes): a circle, an oval, an ellipse, and a diamond. At the same time, the material of the hole mechanism 240, particularly the portion adjacent the hole 241, may be graphite to reduce possible contamination caused by the ion beam 20 colliding with the hole mechanism 240. Moreover, to further reduce possible contamination, a shield may be selectively provided to prevent the hole drive mechanism 250 from being implanted by the ion beam 20 (i.e., the shield is interposed between the ion beam 20 and the hole drive mechanism 250). According to an embodiment not shown in the drawings, the shield may be made of graphite and located at the upper end of the hole mechanism 240 and adjacent to the hole mechanism 240, thereby covering most of the hole mechanism 240 to expose only the hole 241.

The third A diagram, the third B diagram, and the third C diagram respectively show schematic flow diagrams of ion implantation methods according to different embodiments of the present invention. These three embodiments are based on the above discussion, and their related description has been simplified or even omitted. As shown in FIG. 3A, the ion implantation method includes a step 310 of providing a wafer, a ribbon ion beam and a hole mechanism having a hole, and adjusting the ribbon ion beam by the hole mechanism to partially band The step of passing the ion beam through the hole to implant the wafer 320 and a step 330 of utilizing the movement of the wafer and the movement of the hole to achieve a two dimensional wafer scan. As shown in FIG. B, another ion implantation method includes a step 340 of providing a wafer, an ion beam, and a hole mechanism having a hole for adjusting the ion beam before implanting the wafer, and a step along The first direction moves the wafer and moves the aperture mechanism in a second direction that intersects the first direction such that the projected area of the adjusted ion beam scans the wafer in two dimensions. Wherein, the incident angle between the wafer and the ion beam is fixed while the wafer moves across the ion beam. As shown in FIG. 3C, another ion implantation method includes a step 360 of providing a wafer, an ion beam, and a hole mechanism having a hole for adjusting the ion beam before implanting the wafer, and a step along The first direction moves the wafer and moves the aperture mechanism in a second direction that intersects the first direction such that the projected area of the adjusted ion beam scans the wafer in two dimensions. Wherein, during the movement of the wafer across the ion beam, the area of the hole is maintained to be significantly smaller than the cross-sectional area of the ion beam. The area of the holes is also adjustable during wafer or hole movement to produce a particular implant concentration profile.

The implementation details and advantages of the first ion implantation method are discussed below with reference to Figures 4A through 4J.

First, as shown in FIG. 4A, the hole 241 overlaps the first portion of the ion beam 20, and the wafer 10 is located on one side of the ion beam 20. The ion beam 20 is a ribbon ion beam and the size of the aperture 241 is similar to a conventional spot ion beam. For example, when the wafer diameter is 300 mm, the length of the hole 241 is about 150 to 200 mm. At the same time, the width of the hole 241 is equal to or slightly smaller than the width of the ion beam 20. The width of the hole can also be made larger than the width of the ion beam to produce a similar effect as when the hole width is equal to the ion beam width, since the ion beam does not change when the hole width is greater than the ion beam width.

Next, as shown in FIG. 4B, the wafer 10 is moved to the left side of the ion beam 20 in the ion beam width direction (in other words, the short direction). During the movement of the wafer 10 across the ion beam 20, the first portion 181 of a wafer 10 is implanted by a portion of the ion beam 20 that passes through the aperture 241.

Next, as shown in FIG. 4C, the wafer 10 is fixed but the holes 241 are moved by a distance along the ion beam length direction (in other words, the long direction) of the ion beam 20. In order to ensure proper implantation and minimize the risk of partial wafers being implanted and having a significantly lower implant dose, the travel distance is typically no greater than the dimension of the holes 241 along the length of the ion beam 20. In practice, the moving distance is typically small to increase the uniformity of implantation of all of the implanted portions of wafer 10.

Thereafter, as shown in the fourth D diagram, the wafer 10 is moved from the left side of the ion beam 20 to the right side of the ion beam 20 in the ion beam width direction (in other words, the short direction). During the movement of the wafer 10 across the ion beam 20, the second portion 182 of a wafer 10 is implanted by a portion of the ion beam 20 that passes through the aperture 241. Due to the movement of the hole 241 as shown in the fourth C diagram, the first portion 181 is different from the second portion 182, and the difference therein is proportional to the moving distance. The shorter the moving distance, the higher the uniformity of the implant on the first portion 181 and the second portion 182.

Stately, at least a portion of the wafer 10 can be implanted by repeating the above steps, i.e., repeating the step of alternately moving the wafer 10 across the ion beam 20 and moving the aperture 241 across the ion beam 20. The fourth E diagram shows a simplified example in which only the eight portions 181-188 of the wafer 10 are sequentially implanted, and the moving distance maintains one tenth of the length of the hole 241. It will be apparent that the combination of these portions 181-188 corresponds to the desired implant area on wafer 10. Of course, the fourth E diagram is only an example. The present invention may have less or more portions being implanted during different periods in which the wafer 10 moves across the ion beam 20, and the combination of these portions may be part of the wafer 10. Or the entire wafer 10 to create a uniform or non-uniform implant area on the wafer 10.

The conventional two-dimensional wafer scanning will be briefly discussed below with reference to the fourth F to fourth J drawings.

First, as shown in the fourth F diagram, when the ion beam is a conventional spotted ion beam directly supplied to an ion beam assembly, the wafer 10 is located on one side of the ion beam 20 (on the right side of the figure). In other words, the ion beam 20 is not adjusted by a ribbon beam to a point ion beam.

Next, as shown in the fourth G diagram, the wafer 10 is moved to the left side of the ion beam 20 in the ion beam width direction (in other words, the short direction). During the movement of the wafer 10 across the ion beam 20, the first portion 191 of a wafer 10 is implanted by a portion of the ion beam 20 that passes through the aperture 241.

Next, as shown in the fourth H diagram, the ion beam 20 is fixed but the wafer 10 is moved a distance along the ion beam length direction (in other words, the long direction) of the ion beam 20. In order to ensure proper planting and minimize the risk of partial wafers being implanted and have significantly lower implant doses, the moving distance tends to remain no greater than the length of the spot beam (ion beam 20) along the ion beam 20. The size of the direction. In practice, the moving distance is typically small to increase the uniformity of implantation of all of the implanted portions of wafer 10.

Thereafter, as shown in FIG. 4I, the wafer 10 is moved from the left side of the ion beam 20 to the right side of the ion beam 20 in the ion beam width direction (in other words, the short direction). During the movement of wafer 10 across ion beam 20, a second portion 192 of a wafer 10 is implanted by a portion of ion beam 20 that passes through aperture 241. Due to the movement of the hole 241 as shown in the fourth H diagram, the first portion 191 is different from the second portion 192, and the difference therein is proportional to the moving distance. The shorter the moving distance, the higher the uniformity of the implant on the first portion 191 and the second portion 192.

Stately, at least a portion of the wafer 10 can be implanted by repeating the above steps, i.e., repeating the step of alternately moving the wafer 10 across the ion beam 20 and moving the aperture 241 across the ion beam 20. The fourth J diagram shows a simplified example in which only the eight portions 191-198 of the wafer 10 are sequentially implanted, and the moving distance maintains one tenth of the longer dimension of the ion beam 20. It will be apparent that the combination of these portions 191-198 corresponds to the desired implant area on wafer 10. Of course, the fourth J diagram is merely an example, and the invention may have fewer or more portions being implanted during different periods in which the wafer 10 moves across the ion beam 20.

Based on the above discussion, the implant results on wafer 10 may be similar or even identical, either by current ion implantation methods or conventional two-dimensional wafer scanning. Nonetheless, current ion implantation methods have a significant advantage in that wafer 10 does not have to move along ion beam 20. Thus the hardware or operation required to move the wafer 10, or even a very heavy wafer moving mechanism that is proportional to the size of the wafer, is moved by the hardware or operation required for the relatively light aperture mechanism 240. Alternatively, the hole mechanism 240 can be a flat plate having an opening (hole 241). The most porous drive mechanism 250 is also moved, but since the bore mechanism 240 is a very light hardware, the hole drive mechanism 250 is reasonably light and simple. It is reasonable to say that current ion implantation methods can use simpler and lighter hardware, further reducing energy consumption, simplifying operation, and reducing possible mechanical particle contamination and other problems.

Note that the fourth to fourth E diagrams do not show the case where the length of the desired implanted region is greater than the length of the ion beam 20 or at least greater than the length of the uniform portion of the ion beam 20. In this case, even if the hole 241 moves along the entire ion beam 20 (or moves uniformly along the entire ion beam 20), the required implanted area is not completely implanted. Therefore, in order to completely cover the entire wafer, it may be necessary to move the wafer 10 along the length of the ion beam, and the required wafer 10 is moved at least by the difference between the length of the desired implanted region and the length of the ion beam 20 (or The difference between the length of the implanted region and the length of the uniform portion of the ion beam 20).

Note that the fourth to fourth J diagrams do not show the case where the length of the desired implanted region is equal to the diameter of the wafer 10. Nevertheless, it is quite clear that the above steps are repeated continuously until the entire wafer 10 is implanted. Therefore, in order to completely cover the entire wafer, it may be necessary to move the wafer 10 along the long direction of the ion beam 20 (a point ion beam), and the required wafer 10 moving distance is at least the length of the desired implantation region and the length of the ion beam 20 The difference between (or the difference between the length of the desired implanted area and the length of the uniform portion of the ion beam 20).

Reasonably speaking, since the ion beam 20 of the fourth to fourth E diagrams is a ribbon ion beam having a larger length, and the ion beam 20 of the fourth to fourth J diagrams has a smaller length The conventional spotted ion beam, when the length of the desired implanted region is equal to the diameter of the wafer 10 (or the length of the desired implanted region is greater than the length of the uniform portion of the ion beam 20), the present invention can still reduce the required ion along the ion The wafer 10 in the long direction of the bundle 20 moves a distance. Therefore, the present invention can enjoy lower energy consumption when moving the wafer along the length of the ion beam compared to conventional two-dimensional wafer scanning using a conventional spotted ion beam, and even the short moving distance required, the present invention can A simpler hardware is used to move the wafer along the length of the ion beam.

In addition, another advantage of current ion implantation methods is the high operational flexibility of the ion implanter. Note that the holes are used to adjust a ribbon ion beam so that the implant on the wafer can be similar to that implanted by a conventional spot ion beam. Therefore, an ion implanter having a single ion beam assembly to provide a ribbon ion beam can directly implant the wafer by the ribbon ion beam, but can also be indirectly after the ribbon ion beam is adjusted by the hole. The wafer is implanted such that the adjusted ribbon ion beam resembles a point ion beam. Thus, with current ion implantation methods, the ion implanter can be a dual mode implanter by simply using a movable aperture mechanism to dynamically adjust the ion beam as described above.

Two practical examples of blocks 350/370 are shown in Figures 5A through 5G and 6A through 6G, respectively. In the present embodiment, the ion beam 20 is a ribbon ion beam having a length greater than the diameter of the wafer 10. However, another embodiment not shown may use a point ion beam or a ribbon ion beam having a length less than the diameter of the wafer. Of course, if the wafer diameter is greater than the length of the ion beam, an additional step must be included to move the wafer 10 and or the ion beam 20 along the long axis of the ion beam to ensure that the entire wafer 10 can be properly implanted. Thus, the additional movement of wafer 10 or ion beam 20 is only used to change the relative geometric relationship between wafer 10 and ion beam 20, rather than to change the underlying mechanism of this embodiment.

Referring to FIGS. 5A and 5B, the hole 241 is located at the first position of the Y-axis, and the wafer 10 is located at the side of one of the holes 241 along the X-axis. Wherein, as an example, if the wafer 10 is a 300 mm wafer, the length of the ribbon ion beam is about 350 mm, the unevenness of the ribbon ion beam is about 5%, and usually not less than 1%, and the hole 241 Has an elliptical or diamond shape. To ensure that the current distribution of the ion beam 20 has a Gaussian distribution, the longitudinal dimension L of the hole 241 is about 150 mm, and the lateral dimension W of the hole 241 is about 60 mm.

Considering the holes 241, the fifth C and fifth D figures show the relative movement of the holes 241 along the Y axis by the ion beam 20, whereby only the adjusted portion of the ion beam 20 can be implanted into the wafer through the holes 241. 10. As an example, the scanning speed may be a function of at least one or more of a predetermined implant concentration profile, a number of scans, and an edge correction factor. Next, referring to FIGS. 5E and 5F, the holes 241 further pass through the ion beam 20 until reaching the other side of the wafer 10, thereby achieving the first one-dimensionality of the ion beam 20 on the wafer 10. Scanning (eg, moving from left to right in the illustration, whether moving wafer 10 or ion beam 20). The ion beam current can then be selectively measured to calculate scan parameters, such as scan rate, which can be used for the next one-dimensional scan of ion beam 20 on wafer 10.

Next, the hole 241 can be moved to a second position of the Y-axis (or, conversely, at the current position), and the wafer 10 is positioned for the next step (eg, in the illustration, moving in the X direction). As shown in the fifth G diagram, by repeating the ion implantation step described above, a second one-dimensional scan of the ion beam 20 on the wafer 10 can be achieved (e.g., moving from right to left in the illustration). Of course, other one-dimensional scans can also be achieved. Thus, a two-dimensional scan of the wafer 10 by the ion beam 20 can be achieved by performing a series of individual one-dimensional scans of the wafer 10 or the holes 214. Although not shown in the drawings, the embodiments of the fifth C to fifth F diagrams may further include moving the wafer 10 along the X axis (eg, during the interruption of the movement of the holes 241, during the interruption of the movement of the holes 241, The wafer 10) is moved along the X axis before the movement of the hole 241 or after the movement of the hole 241. The one-dimensional scan described above can be repeated until the wafer 10 is fully scanned by the projected area of the modulated ion beam (e.g., the entire wafer 10 has been scanned two-dimensionally).

Another specific embodiment will now be described. Please refer to Figure 6A. The wafer 10 is located at a first position on the X-axis, and the holes 241 are located on one side of the wafer 10 along the Y-axis. Now, considering the wafer 10, the sixth B, sixth C, and sixth D images show the relative movement of the wafer 10 through the ion beam 20 along the Y axis, whereby only the adjusted portion of the ion beam 20 can pass. The holes 241 are implanted onto the wafer 10.

Referring to Figures 6E and 6F, wafer 10 passes through ion beam 20 until it reaches the other side. Thus, the first one-dimensional scan of ion beam 20 on wafer 10 is achieved (no ion beam 20 is moved). The ion beam current can then be selectively measured and scan parameters, such as scan rates, calculated to prepare the next one-dimensional scan of the ion beam 20 through the holes 241 in the wafer 10. The wafer can then be moved to one of the second positions of the X-axis and the aperture 241 can be moved to the position of the next step. Therefore, as shown in the sixth G diagram, a second one-dimensional scan of the ion beam 20 (or the projected area of the ion beam 20 formed on the wafer 10) on the wafer 10 is achieved by repeating the ion implantation step described above. As with the above examples, other one-dimensional scans can of course be achieved. Thus, by performing a plurality of one-dimensional scans, a two-dimensional scan of the ion beam 20 on the wafer 10 can be achieved. Although not shown in the drawings, alternatives but not interchangeable or equivalent embodiments of Figures 6B through 6F may include moving the holes 241 along the X axis (eg, while the wafer 10 is moving, the crystal The wafer 10 is moved along the X-axis during the interruption of the movement of the circle 10, before the movement of the wafer 10, or after the movement of the wafer 10. The one-dimensional scan described above can be repeated until the wafer 10 is scanned by the projected area of the modulated ion beam (eg, the entire wafer has been scanned two-dimensionally).

Furthermore, to more elastically adjust the adjusted ion beam shape, the holes 241 can be selectively moved slightly in the vicinity of the ion beam 20. For example, the hole 241 is held at one of the fixed points of the Y-axis, but the hole 241 is slightly moved along the X-axis. Therefore, as shown in FIGS. 7A and 7B, the projected area of the ion beam 20 can be deformed or completely blocked. Different portions of the wafer 10 can then be implanted by different tuned ion beams or not implanted at all. Obviously, the selective steps described above may be more suitable for a particular situation, for example, for non-uniform two-dimensional implantation of wafer 10.

The embodiments described above are merely illustrative of the technical spirit and characteristics of the present invention, and the objects of the present invention can be understood and implemented by those skilled in the art, and the scope of the invention cannot be limited thereto. Various equivalent changes or modifications may be made without departing from the spirit and scope of the invention, and are intended to be included within the scope of the invention.

10. . . Wafer

20. . . Ion beam

100. . . Traditional ion implanter

110. . . source of ion

120. . . Analytical magnet

181~188. . . Part of the wafer

191~198. . . Part of the wafer

200. . . Ion implanter

210. . . source of ion

220. . . Analytical magnet

230. . . Wafer drive mechanism

240. . . Hole mechanism

241. . . Hole

250. . . Hole drive mechanism

310. . . Providing a wafer, a ribbon ion beam and a hole mechanism having a hole

320. . . Adjusting the ribbon ion beam by a hole mechanism so that a portion of the ribbon ion beam passes through the hole to implant the wafer

330. . . Use wafer movement and hole movement to achieve a two-dimensional wafer scan

340. . . Providing a wafer, an ion beam, and a hole mechanism having a hole for adjusting the ion beam before implanting the wafer

350. . . Moving the wafer in a first direction and moving the hole mechanism in a second direction intersecting the first direction such that the projected area of the adjusted ion beam scans the wafer in two dimensions, wherein the wafer moves across the ion beam The angle of incidence between the wafer and the ion beam is fixed

360. . . Providing a wafer, an ion beam, and a hole mechanism having a hole for adjusting the ion beam before implanting the wafer

370. . . Moving the wafer in a first direction and moving the hole mechanism in a second direction intersecting the first direction such that the projected area of the adjusted ion beam scans the wafer in two dimensions, wherein the wafer moves across the ion beam , the area of the hole is maintained to be significantly smaller than the cross-sectional area of the ion beam

Figure 1A shows a simplified schematic of a conventional ion implanter. The first B diagram shows a top view of the wafer in the first A diagram. Figure 2A is a cross-sectional view showing an ion implanter having a hole mechanism in accordance with an embodiment of the present invention. The second B diagram and the second C diagram respectively show a schematic cross-sectional view and a top view of the hole mechanism in the second A diagram. 3A to 3C are schematic flow charts showing the ion implantation method according to the third embodiment of the present invention, respectively. 4A to 4E are schematic views showing an ion implantation step of an example of the ion implantation method in the third A diagram. The fourth through fourth to fourth J views show the steps of a conventional two-dimensional wafer scan. The fifth to fifth G diagrams show a schematic diagram of the ion implantation step of one example of the ion implantation method in the third B diagram. 6A to 6G are schematic views showing an ion implantation step of an example of the ion implantation method in the third C diagram. 7A through 7B are diagrams showing the steps of selectively adjusting the adjusted ion beam in accordance with an embodiment of the present invention.

10. . . Wafer

20. . . Ion beam

230. . . Wafer driver

240. . . Hole mechanism

241. . . Hole

250. . . Hole drive mechanism

Claims (27)

An ion implantation method comprising: providing a wafer, a ribbon ion beam, and a hole mechanism having a hole; adjusting the ribbon ion beam by using the hole mechanism to pass the ribbon ion beam cloth through the hole Planting the wafer; and utilizing the movement of the wafer and the movement of the hole to achieve a two-dimensional wafer scan. The ion implantation method of claim 1, further comprising controlling the shape and size of the hole to approximate the shape and size of the spot ion beam. The ion implantation method according to claim 1, further comprising at least one of the following: alternately moving the wafer in a short direction of the ribbon ion beam and moving along a long direction of the ribbon ion beam a hole; and simultaneously moving the wafer in a short direction of the ribbon ion beam and moving the hole along a long direction of the ribbon ion beam. The ion implantation method according to claim 3, further comprising: for each movement of the hole, maintaining a distance of the hole along the length of the strip beam is not greater than a length of the hole along the strip beam; size of. The ion implantation method of claim 1, further comprising: moving the wafer through the ribbon ion beam to move the wafer from a first side of the ribbon ion beam to the strip a second side of the ion beam; operating the hole mechanism to move the hole along the ribbon ion beam; moving the wafer through the ribbon ion beam such that the wafer is from the second side of the ribbon ion beam Moving to the first side of the ribbon ion beam; operating the hole mechanism to move the hole along the ribbon ion beam; and sequentially repeating the two-dimensional wafer scanning; wherein, in the hole The movement speed of the hole and the wafer during the movement of the wafer is adjustable. The ion implantation method of claim 5, further comprising, for each movement of the hole, maintaining a distance of movement of the hole along the ribbon ion beam by no more than a size of the hole along the ribbon ion beam. The ion implantation method according to claim 1, further comprising at least one of the following: the shape of the hole is similar to a conventional point ion beam; the shape of the hole is smooth or close to a Gaussian shape; The shape is selected from one of the following groups: a circle, an oval, an ellipse, and a diamond; the size of the hole along the length of the ribbon beam is about one-quarter to two-thirds the diameter of the wafer; The dimension of the hole along the width direction of the ribbon ion beam is greater than, equal to or less than the width of the ribbon ion beam; the size of the hole is adjustable; and the shape of the hole is adjustable. An ion implanter comprising: an ion beam assembly for generating an ion beam; a wafer drive mechanism for moving a wafer in a first direction, wherein the crystal is moved during movement of the wafer through the ion beam The direction of movement of the circle is perpendicular to the ion beam such that the angle of incidence between the wafer and the ion beam is fixed; a hole mechanism having a hole to adjust the ion beam prior to implanting the wafer; and a hole drive mechanism Moving the hole mechanism in a second direction intersecting the first direction; thereby, when the wafer and the hole mechanism are respectively moved along the first direction and the second direction, one of the adjusted ion beams is projected The area scans the wafer in a two-dimensional scan. The ion implanter of claim 8 wherein the ion beam assembly outputs the ion beam along a fixed ion beam path and the ion beam is not scanned when the ion beam is adjacent to the wafer. The ion implanter of claim 8, further comprising at least one of the following: the wafer driving mechanism moves the wafer only in the first direction; the hole driving mechanism moves the second direction a hole driving mechanism; the wafer driving mechanism moves the wafer slightly in the second direction, wherein a distance of movement of the wafer in the second direction is approximately equal to a portion of the dimension of the hole along the second direction; and the hole driving The mechanism moves the aperture mechanism slightly in the first direction, wherein the aperture drive mechanism moves a distance approximately equal to a portion of the dimension of the aperture along the first direction. The ion implanter of claim 8, further comprising at least one of the following: the size of the hole along the length of the ion beam is smaller than the length of the ion beam; the size of the hole along the width of the ion beam is smaller than the Ion beam width; the area of the hole is smaller than the cross-sectional area of the ion beam; the shape of the hole ensures that the ion beam current distribution of the adjusted ion beam gradually decreases to zero at the edge of the hole; the shape of the hole ensures the shape One of the adjusted ion beam current beam current distributions has a Gaussian distribution; the shape of the holes is adjustable; and the shape of the holes is selected from one of the following groups: a circle, an oval, an ellipse, and a diamond. The ion implanter of claim 8 further comprising a mask between the ion beam assembly and the hole drive mechanism such that the hole drive mechanism is not implanted by the ion beam. An ion implanter comprising: an ion beam assembly for generating an ion beam; a wafer drive mechanism for moving a wafer in a first direction; a hole mechanism having a hole for implanting the wafer Adjusting the ion beam, wherein an area of the hole is significantly smaller than a cross-sectional area of the ion beam during movement of the hole mechanism; and a hole driving mechanism for moving in a second direction intersecting the first direction a hole mechanism; wherein when the wafer and the hole mechanism move in the first direction and the second direction, respectively, the one projection area of the adjusted ion beam scans the wafer in a two-dimensional scanning manner. The ion implanter of claim 13 further comprising at least one of the following: a dimension of the hole along the length of the ribbon beam is significantly smaller than a length of the ribbon beam; and the hole is along the strip The size of the ion beam width direction is significantly smaller than the width of the ribbon ion beam. The ion implanter of claim 13, further comprising at least one of the following: the wafer driving mechanism moves the wafer only in the first direction; the hole driving mechanism moves only in the second direction a hole mechanism; the wafer driving mechanism also moves the wafer slightly in the second direction, wherein the moving distance of the wafer in the second direction is approximately equal to the size of the hole along the second direction; and the hole driving mechanism The hole mechanism is also moved slightly in the first direction, wherein the hole drive mechanism moves a distance approximately equal to the size of the hole in the first direction. The ion implanter of claim 13 further comprising at least one of the following: the shape of the hole ensures that a beam current distribution of the adjusted ion beam gradually decreases to zero at an edge of the hole; The shape of the hole ensures that a beam current distribution of one of the adjusted ion beams has a smooth or near Gaussian distribution; the shape of the hole is adjustable; and the shape of the hole is selected from one of the following groups: round, oval , oval and diamond. The ion implanter of claim 13 further comprising a mask between the ion beam assembly and the hole drive mechanism such that the hole drive mechanism is not implanted by the ion beam. An ion implantation method comprising: providing a wafer, a ribbon ion beam, and a hole mechanism having a hole for adjusting the ribbon ion beam before implanting the wafer; and along a first Moving the wafer in a direction and moving the hole mechanism in a second direction intersecting the first direction such that the adjusted ion beam scans the wafer in two dimensions on a projection area on the wafer; And performing at least one of: fixing an incident angle between the wafer and the ion beam during movement of the wafer through the ion beam; and maintaining an area of the hole during movement of the hole through the ion beam Less than the cross-sectional area of the ion beam. The ion implantation method of claim 18, further comprising outputting the ion beam along a fixed ion beam path and not scanning the ion beam when the ion beam is adjacent to the wafer. The ion implantation method of claim 18, further comprising slightly moving the hole mechanism in a direction intersecting the second direction to adjust a shape of the projection area of the ion beam even if the shape of the hole Not adjusted. The ion implantation method of claim 18, wherein the wafer is scanned two-dimensionally by the projection region of the ion beam by the following steps: (a) adjusting the hole mechanism such that the hole is located in the ion beam a first portion below and located above a first specific point of the wafer; (b) adjusting the hole mechanism such that the hole moves along the second direction, and at least one of the first portions of the wafer Having being implanted by the ion beam; (c) moving the wafer such that the hole is above a second specific point of the wafer; (d) adjusting the hole mechanism such that the hole moves in the second direction, and At least a second portion of the wafer is implanted by the ion beam; and (e) repeating steps (c) and (d) sequentially until the wafer is scanned by the projection region of the ion beam. . The ion implantation method of claim 18, wherein the wafer is two-dimensionally scanned by the projection region of the ion beam by the following steps: (a) adjusting the hole mechanism such that the hole is located in the ion beam Moving under the first portion; (b) moving the wafer along the first direction such that at least a first portion of the wafer is modulated by the first adjusted ion beam of the hole; Adjusting the hole mechanism such that the hole moves in a second direction, and the hole is located below a second portion of the ion beam; (d) moving the wafer along the first direction such that at least the crystal a second portion of one of the circles is adjusted by the second adjusted ion beam of the hole; and (e) repeating steps (c) and (d) in sequence until the wafer is projected by the ion beam The area completes the 2D scan. The ion implantation method of claim 18, further comprising at least one of: moving the wafer only in the first direction; moving the hole mechanism only in the second direction; slightly along the second direction Moving the wafer, wherein the moving distance of the wafer in the second direction is approximately equal to a portion of the dimension of the hole along the second direction; and moving the hole mechanism slightly in the first direction, wherein the hole driving mechanism The moving distance is approximately equal to the size of the hole along the first direction. The ion implantation method of claim 18, further comprising at least one of the following: adjusting the hole mechanism such that a size of the hole along the length of the ion beam is significantly smaller than a length of the ion beam; adjusting the hole mechanism such that The size of the hole along the width of the ion beam is significantly smaller than the width of the ion beam; adjusting the hole mechanism such that the area of the hole is significantly smaller than the cross-sectional area of the ion beam; adjusting the hole mechanism such that the shape of the hole ensures the adjusted ion beam One of the ion beam currents is gradually reduced to zero at the edge of the hole; the hole mechanism is adjusted such that the shape of the hole ensures a smooth or a Gaussian distribution of the ion beam current distribution of the adjusted ion beam; adjusting the hole mechanism The shape of the hole is made adjustable; and the hole mechanism is adjusted such that the shape of the hole is selected from one of the following groups: a circle, an oval, an ellipse, and a diamond. The ion implantation method of claim 18, further comprising at least one of: adjusting a first speed of the wafer and a second speed of the hole mechanism such that the projection area of the ion beam is An adjustable speed scans through different portions of the wafer; and adjusts at least one scan parameter when the hole is not filled by the ion beam or the adjusted ion beam is not fully projected onto the wafer. The ion implantation method of claim 25, further comprising adjusting a first velocity of the wafer and a second velocity of the hole mechanism as a function of the adjusted ion beam density distribution, such that the ion beam The projected area is scanned at an adjustable speed through a different portion of the wafer to produce a particular implant concentration profile on the wafer. The adjusted ion beam density distribution as described in claim 1 may be uniform or non-uniform.