TW201430909A - Method of forming film on different surfaces - Google Patents

Abstract

A method of forming a film is provided. The method includes at least the following steps. A first substrate and a second substrate are provided in a batch processing system, wherein a first surface of the first substrate is adjacent to a second surface of the second substrate, the first surface of the first substrate has a first surface condition, the second surface of the second substrate has a second surface condition, and the first surface condition is different from the second surface condition. A pretreatment gas is provided to the surfaces of the substrates for transforming the first surface condition and the second surface condition to a third surface condition. A reaction gas is provided to form the film on the surfaces, having the third surface condition, of the substrates.

Description

Method for manufacturing film layers on different surfaces

The present invention relates to a method of making a film layer, and more particularly to a method of making a film layer on different surfaces.

In semiconductor structures, a tantalum nitride layer is commonly used as an etching stop layer or as a hard mask. The tantalum nitride layer made by atomic layer deposition (ALD) has good etch barrier properties and also has good wafer uniformity. Also, an ultra-thin film layer can be formed, and thus it is widely used in a semiconductor structure.

However, in a batch process, when a tantalum nitride layer is formed on a plurality of wafers by atomic layer deposition, a film thickness of a tantalum nitride layer formed on a plurality of wafers often occurs. The difference is too large, that is, the thickness of the tantalum nitride film between the wafers is not uniform. Therefore, relevant industry players are committed to research and development and solve this problem.

The present invention relates to a method of making a film layer on different surfaces. Before forming the film layer, the pretreatment gas is provided on the surface of the plurality of substrates so that the surfaces of the plurality of substrates have substantially the same surface state, so that the growth rate of the film layer on the surface of each substrate can be very close or Substantially the same, the effect of uniformity of film thickness generated on different substrates can be achieved.

According to an aspect of the invention, a method of manufacturing a film layer of a batch process is proposed. The manufacturing method includes: providing a first substrate and a second substrate in a batch processing system, wherein the first substrate is adjacent to a second surface of the second substrate by a first surface, the first substrate The surface has a first surface state, and the second surface of the second substrate has a second surface state, the first surface state and the second surface state being different; providing a pretreatment gas to the substrates Surfaces for converting the first surface state and the second surface state to a third surface state; and providing a reactive gas to form a film on the surfaces of the substrates having the third surface state.

According to another aspect of the present invention, a method of fabricating a nitride layer is proposed. The manufacturing method includes: providing a first substrate and a second substrate, wherein the first substrate has a first surface adjacent to a second surface of the second substrate, and the first surface of the first substrate has a first surface state The second surface of the second substrate has a second surface state, the first surface state and the second surface state being different; exposing the first surface and the second surface of the first substrate under a first operating pressure The second surface of the substrate is in a nitrogen-containing pretreatment gas; and a nitride layer is formed on the first surface of the first substrate by atomic layer deposition at a second operating pressure and And a second operating surface of the second substrate, wherein the second operating pressure is less than the first operating pressure.

In order to provide a better understanding of the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings

In the embodiment of the present invention, before the film layer is formed on different surfaces of the plurality of substrates, the pretreatment gas is provided on the surface of the plurality of substrates, so that the surfaces of the plurality of substrates have substantially the same surface state, thereby further forming the film. The growth rates of the layers on the surface of each substrate can be very close or substantially the same, and the effect of uniformity of film thickness generated on different substrates can be achieved. Embodiments of the present invention will be described in detail below with reference to the drawings. The same reference numerals are used to designate the same or similar parts. It is to be noted that the drawings have been simplified to clearly illustrate the contents of the embodiments, and the dimensional ratios in the drawings are not drawn to the scale of the actual products, and thus are not intended to limit the scope of the present invention.

1A to 1B are flow charts showing a method of manufacturing a film layer according to an embodiment of the present invention. Referring to FIG. 1A, a first substrate 110 and a second substrate 120 are provided. The first substrate 110 is adjacent to the second surface 120b of the second substrate 120, and the first surface 110a of the first substrate 110 has In a first surface state, the second surface 120b of the second substrate 120 has a second surface state, and the first surface state and the second surface state are different.

In an embodiment, as shown in FIG. 1A, the second surface 110b of the first substrate 110 relative to the first surface 110a may also have a first surface state, and the first surface of the second substrate 120 relative to the second surface 120b 120a can also have a second surface state.

Next, as shown in FIG. 1A, a pretreatment gas 150 is provided on the surfaces 110a and 120b of the substrates 110 and 120 to switch the first surface state and the second surface state to a third surface state.

In an embodiment, the first surface state, the second surface state, and the third surface state are respectively an oxygen rich state, a nitrogen rich state, a carbon rich state, and a rich silicon (silicon rich) One of the states. In one embodiment, the first surface state, the second surface state, and the third surface state may be completely different from each other; in another embodiment, the third surface state may also be the same as the first surface state or the second surface state.

In the embodiment, the oxygen-rich state refers to, for example, that the material of the surface of the substrate includes an oxygen-containing material, such as a metal oxide; the nitrogen-rich state refers to, for example, that the material of the surface of the substrate includes a nitrogen-containing material, such as a metal nitride (for example, a metal nitride) The carbon-rich state refers to, for example, that the material of the surface of the substrate includes a carbonaceous material, such as a metal carbide; the state of the rich state refers to, for example, that the material of the surface of the substrate includes a cerium-containing material, such as a silicide. ).

In one embodiment, as shown in FIG. 1A, the first substrate 110 includes, for example, a germanium layer 111, a pattern layer 113, and an oxide layer 115. The pattern layer 113 is formed on the germanium layer 111, and the oxide layer 115 covers the germanium layer. 111 and the pattern layer 113, the pattern layer 113 is, for example, a circuit pattern, and the oxide layer 115 is, for example, ruthenium oxide. The second substrate 120 includes, for example, a germanium layer 121 and a nitride layer 123. The nitride layer 123 is formed on the germanium layer 121 and covers the germanium layer 121. The nitride layer 123 is, for example, tantalum nitride. In this embodiment, the oxide layer 115 of the first substrate 110 has a first surface state, and the nitride layer 123 of the second substrate 120 has a second surface state. That is, in the present embodiment, the first surface state is an oxygen-rich state and the second surface state is a nitrogen-rich state.

In one embodiment, the pretreatment gas 150 is a nitrogen-containing pretreatment gas, such as ammonia (NH ₃ ). In this way, in the embodiment, the third surface state formed after the pretreatment of the ammonia gas is a nitrogen-rich state, and the surface of the pretreated substrate is, for example, a nitride layer. In the embodiment, the surface of the substrate is exposed to the nitrogen-containing pretreatment gas for about 10 minutes.

In the embodiment, as shown in FIG. 1A, a third substrate 130 may be further provided, for example, the first surface 130a is adjacent to the first surface 110a of the first substrate 110. In another embodiment, the third substrate 130 may also be adjacent to the second surface 120b (not shown) of the second substrate 120. The first surface 130a of the third substrate 130 has a fourth surface state, the fourth surface state being at least different from the first surface state or the second surface state.

In the embodiment, the fourth surface state is one of an oxygen-rich state, a nitrogen-rich state, a carbon-rich state, and a rich state. In one embodiment, as shown in FIG. 1A, the third substrate 130 is, for example, a tantalum layer. In this embodiment, the ruthenium layer of the third substrate 130 has a fourth surface state. That is to say, in the present embodiment, the fourth surface state is a rich state.

In one embodiment, for example, at a first operating pressure, the first surface 110a of the first substrate 110 and the second surface 120b of the second substrate 120 are exposed to the pretreatment gas 150 (eg, nitrogen-containing pretreatment) In the gas), the first surface state and the second surface state are switched to the third surface state. In an embodiment, the first operating pressure is, for example, greater than 0.2 torr. In an embodiment, the first surface 130a of the third substrate 130 may be exposed to the pretreatment gas 150 (for example, a nitrogen-containing pretreatment gas) to convert the fourth surface state to the third surface under the first operating pressure. status. In the embodiment, the surfaces of the first substrate 110, the second substrate 120, and the third substrate 130 are, for example, It can be exposed to the pretreatment gas 150 at the same time.

Next, as shown in FIG. 1B, a reactive gas 160 is provided to form a film layer 180 on the surface of the substrates 110 and 120 having a third surface state, such as the first surface 110a of the pretreated first substrate 110. And a second surface 120b of the second substrate 120. In the embodiment, the reaction gas 160 is also provided to form the film layer 180 on the surface of the third substrate 130 having the third surface state, for example, the first surface 130a of the third substrate 130 which has been pretreated. In an embodiment, the reactive gas 160 may be simultaneously supplied to the surfaces of the first substrate 110, the second substrate 120, and the third substrate 130 having the third surface state.

In the embodiment, the film layer 180 is formed on the surfaces of the substrates 110, 120, and/or 130, for example, by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

In one embodiment, the reactive gas 160 is provided, for example, at a second operating pressure, and the second operating pressure is less than the first operating pressure. In an embodiment, the first operating pressure is, for example, greater than 0.2 Torr, and the second operating pressure is, for example, about 0.2 Torr. In other words, the pretreatment of the substrate surface is carried out at a relatively high pressure.

In one embodiment, the nitride layer 180 is formed by atomic layer deposition on the surface of the substrate 110, 120, and/or 130 having a third surface state, for example, under a second operating pressure.

In one embodiment, the reaction gas 160 includes, for example, a first reaction gas and a second reaction gas. The first reaction gas and the second reaction gas system are different. In one embodiment, the first reaction gas and the second reaction gas can be simultaneously Provided to the substrate. In another embodiment, the first reactive gas and the second reactive gas may also be provided to the substrate at different points in time.

In one embodiment, the operating temperature at which the film layer 180 is formed by atomic layer deposition is about 630 ° C, and the method of forming the film layer 180 by atomic layer deposition includes, for example, the following steps.

First, the surface of the pretreated substrate 110, 120 is exposed to the first reaction gas, for example, the first surface 110a of the first substrate 110 and the second surface 120b of the second substrate 120. In an embodiment, the first reactive gas comprises, for example, a nitrogen source precursor, such as ammonia (NH ₃ ). In the embodiment, the surface of the pretreated third substrate 130 is also exposed in the first reaction gas, for example, the first surface 130a of the third substrate 130. In an embodiment, the pretreated substrates 110, 120, and/or 130 surfaces are, for example, simultaneously exposed to the first reactive gas.

Next, the surfaces of the substrates 110, 120, and/or 130 are purged to discharge the first reactive gas, such as the first surface 110a of the first substrate 110, the second surface 120b of the second substrate 120, and the third substrate. The first surface 130a of 130. In an embodiment, the substrate is purged with an inert gas, such as nitrogen.

Then, the surface of the substrate 110, 120, and/or 130 is exposed to the second reaction gas, for example, the first surface 110a of the first substrate 110 and the second substrate 120 of the first substrate 110 that have been exposed to the first reaction gas. The surface 120b and the first surface 130a of the third substrate 130. The second reaction gas is different from the first reaction gas system, and the second reaction gas includes, for example, a silicon source precursor such as dichlorosilane (DCS).

Next, the surfaces of the substrates 110, 120, and/or 130 are again purged to drain the second reactive gas. In an embodiment, the substrate is purged with an inert gas, such as nitrogen.

Next, the above steps of exposure and purging are repeated until the film layer 180 is formed. In the embodiment, the film layer 180 is a nitride layer, such as a tantalum nitride film (SiN).

In another embodiment, the method of forming the film layer 180 by atomic layer deposition includes, for example, the following steps.

First, referring to the above embodiment, the surface of the pretreated substrates 110, 120, and/or 130 is exposed to the first reaction gas, and the surfaces of the substrates 110, 120, and/or 130 are purged to remove the first The reaction gas is exposed to the surface of the pretreated substrates 110, 120, and/or 130 in the second reaction gas, and the surfaces of the substrates 110, 120, and/or 130 are again purged to drain the second reaction gas.

Next, the surface of the pretreated substrates 110 and 120 is exposed to a third reaction gas, and the third reaction gas is different from the first reaction gas and the second reaction gas system. The third reactive gas includes, for example, a carbon source precursor such as ethylene (C ₂ H ₄ ). In the embodiment, the surface of the pretreated third substrate 130 is also exposed to the third reaction gas, for example, the first surface 130a of the third substrate 130.

Then, the surface of the substrate 110, 120, and/or 130 is purged to drain the third reactive gas, for example, the first surface 110a of the first substrate 110, the second surface 120b of the second substrate 120, and the third substrate 130. First surface 130a. In an embodiment, the substrate is purged with an inert gas, such as nitrogen.

Then, repeat the above steps of exposure and purging until a film layer is formed 180. In the embodiment, the film layer 180 is a carbon nitride, such as a tantalum carbonitride film (SiCN).

In one embodiment, the surfaces of the pretreated substrates 110, 120, and/or 130 may be simultaneously exposed to the second reactive gas and the third reactive gas, the third reactive gas and the first reactive gas and the second reactive gas. The system is different.

2 is a schematic view of a batch processing system according to an embodiment of the present invention. Referring to FIG. 2, the film layer manufacturing method of the embodiment of the present invention can be applied to a batch process. As shown in FIG. 2, a plurality of substrates may be disposed in the batch processing system 100. The substrates may be different types of substrates, and are disposed in different areas of the batch processing system 100 according to the needs of the process, for example, the area P. , area M and area D. In the embodiment, as shown in FIG. 2, the first substrate 110, the second substrate 120, and the third substrate 130 may be provided in the batch processing system 100. The first substrate 110 is disposed in the region P, for example, the second substrate 120. For example, it is provided in the area D, and the third substrate 130 is provided, for example, in the area M. In one embodiment, the batch processing system 100 is provided with, for example, a plurality of first substrates 110, a plurality of second substrates 120, and a plurality of third substrates 130. The first substrate 110 is, for example, a product having a circuit pattern. A production wafer, the second substrate 120 is, for example, a dummy wafer, and the third substrate 130 is, for example, a monitor wafer.

3A-3B are flow charts showing a manufacturing method for forming a film layer on different surfaces by atomic layer deposition. As shown in FIG. 3A, the surfaces of the first substrate 110 and the second substrate 120 are not pretreated and have different surface states. In an embodiment, the oxide layer 115 on the surface of the first substrate 110 is dioxins. The nitride layer 123 on the surface of the second substrate 120 is tantalum nitride, and the first reaction gas 160a is ammonia gas. The first reaction gas 160a is introduced into and flows into the gaps G1 and G2 between the surfaces of the first substrate 110 and the second substrate 120. When ammonia gas (first reaction gas 160a) flows into gap G1, both sides of gap G1 are tantalum nitride and germanium dioxide, and ammonia gas tends to form a nitride monolayer on the surface of tantalum dioxide (oxidation layer 115). ). When ammonia gas (first reaction gas 160a) flows into the gap G2, both sides of the gap G2 are cerium oxide, and the ammonia gas is substantially evenly dispersed to the surfaces of the cerium oxide (oxidation layer 115) on both sides to form nitrides. In a single layer, the amount of ammonia gas reactive on the surface of the ceria on both sides of the gap G2 is substantially less than the surface of the ceria on one side of the gap G1, causing tantalum nitride formed on the surface of the ceria in the gap G1. It is thicker, and the tantalum nitride formed on the surface of the ceria on both sides of the gap G2 is thinner, and the film thickness generated on the different substrates is different, and the film thickness between the substrates is uneven.

In addition, taking the growth of tantalum nitride film on different surfaces as an example, the adsorption rate of tantalum nitride on the tantalum nitride film precursor is greater than the adsorption rate of the tantalum nitride film precursor, and the tantalum tantalum nitride film precursor The adsorption rate is greater than the adsorption rate of cerium oxide to the cerium nitride film precursor. As shown in FIG. 3B, the surfaces of the first substrate 110 and the second substrate 120 are not pretreated and have different surface states. In the embodiment, the nitride layer 123 on the surface of the second substrate 120 is tantalum nitride, the surface of the third substrate 130 is tantalum, the first reaction gas 160a is ammonia gas, and the second reaction gas 160b is dichlorosilane. Therefore, the ammonia gas (the first reaction gas 160a) flowing into the gap G3 and the dichlorosilane (the second reaction gas 160b) tend to flow toward the surface of the crucible, so that the tantalum nitride generated on the surface 130a of the third substrate 130 is thicker. The film thickness generated on different substrates does not occur In the same manner, the film thickness between the substrates is uneven.

In contrast, in the embodiment of the present invention, before the film layer 180 is formed, the pretreatment gas 150 is provided on the surface of the substrate, so that the surfaces of the plurality of substrates after the pretreatment have substantially the same surface state. The adsorption rate of the surface of the substrate to the precursors can be very close or substantially the same, so that the growth rate of the film layer 180 on the surface of each substrate can be substantially the same, and the uniformity of the film thickness generated on different substrates can be improved. The effect.

The following examples are further described. However, the following examples are for illustrative purposes only and are not to be construed as limiting the implementation of the disclosure.

4 is a schematic view showing a film layer applied to a semiconductor structure according to an embodiment of the present invention. As shown in FIG. 4, the semiconductor structure 400 includes a gate structure 410 and an offset spacer 420, wherein the offset spacer 420 is formed by applying the method for fabricating the film layer 180 of the embodiment of the present invention. 180) on the sidewall of the gate structure 410.

The method of fabricating the semiconductor structure 400 having the offset spacers 420 (film layer 180) includes, for example, the following steps. Forming a gate structure 410; annealing to activate doped regions in the semiconductor structure 400; forming a film layer 180 on the gate structure 410 by a fabrication method of an embodiment of the present invention; and etching the film layer 180 to form The offset spacer 420 is shown in FIG.

The application of the method for fabricating the film layer 180 of the embodiment of the present invention is not limited to the fabrication of the offset spacers 420 as shown in FIG. 4, and may be used to form a hard mask.

Fig. 5 is a view showing a film thickness (sidewall width) distribution of a comparative example of the present invention, and Fig. 6 is a view showing a film thickness (wall thickness) distribution according to an embodiment of the present invention. In the following comparative examples and embodiments, a plurality of first substrates 110, a plurality of second substrates 120, and a plurality of third substrates 130 are disposed in the batch processing system in a manner as shown in FIG. 2, the first substrate 110. The second substrate 120 and the third substrate 130 are respectively a product wafer, a film, and a monitoring wafer. The film layer 180 is formed on the surface of the substrate (wafer) by atomic layer deposition, and after etching, an offset spacer as shown in FIG. 4 is formed, and then the wall thickness of the offset spacer is measured. In the comparative example and the embodiment, the oxide layer 115 on the surface of the first substrate 110 is ceria, the nitride layer 123 on the surface of the second substrate 120 is tantalum nitride, and the surface of the third substrate 130 is tantalum, the first reaction The gas 160a is ammonia gas, the second reaction gas 160b is methylene chloride, and the film layer 180 is a tantalum nitride layer. The difference between the comparative example and the embodiment is that the substrate (wafer) in the embodiment is pretreated with ammonia gas (pretreatment gas 150) at a pressure greater than 0.2 Torr, and the atomic layer deposition method is started at about 0.2 Torr. The pressure was increased by tantalum nitride, and the substrate (wafer) in the comparative example was not subjected to pretreatment.

In the embodiment, the wall thickness is measured by, for example, taking 21 position points on the offset spacer 420 (film layer 180) on the single substrate (wafer), and 21 points are detected in the 21 position points. Wall thickness value. The average wall thickness value is obtained by averaging these 21 values. In addition, the in-wafer variation of the substrate (wafer) refers to the difference between the maximum value and the minimum value among the 21 wall thickness measurement values.

As shown in Figure 5, the wall thickness measurements of four batches B1~B4 are shown, including 25 wafers in each batch, where wafer m represents the monitoring crystal. The sheet (the third substrate 130) and the remaining wafers are the first substrate 110 and the second substrate 120. As shown in Fig. 5, in the comparative example, among the four batches B1 to B4, the wall thickness distribution of the offset growth gap of the batch growth is between about 5.37 and 5.67 nanometers (nm), and the maximum difference between them is about It is 0.30 nm. In contrast, as shown in FIG. 6, in the embodiment, the wafers W01 to W25 represent 25 wafers provided in one batch, and the batch is grown on the offset spacers 420 on the wafers W01 to W25. The wall thickness distribution (film layer 180) is between about 5.299 and 5.429 nm, with a maximum difference of about 0.13 nm. Accordingly, in the embodiment, after the plurality of wafers having different surface states are subjected to pretreatment, the difference in wall thickness between the offset spacers generated on the different wafers is reduced. In other words, according to the manufacturing method of the embodiment of the present invention, the film thickness uniformity of the film layer 180 formed on different wafers is improved.

Furthermore, as shown in FIG. 6, in the embodiment, the variation of the inner wall thickness of the substrate (wafer) of the offset spacer 420 (film layer 180) on the wafers W01 to W25 is less than 0.102 nm. In other words, according to the manufacturing method of the embodiment of the present invention, the film thickness of the film layer 180 formed in a single wafer is relatively uniform.

The following table series shows the mean square deviation (sigma) value of the wall thickness (film thickness) of the offset spacer 420 (film layer 180) and the uniformity of the substrate (wafer) in the above comparative examples and examples. ) value. The numerical calculation of the uniformity in the substrate (wafer) is as follows: (mean square deviation (sigma) / average wall thickness) * 100%. That is to say, the smaller the value of the uniformity in the substrate (wafer), the smaller the wall thickness variation in the single wafer, and the higher the uniformity in the substrate (wafer). In addition, in the table, Group A is calculated based on all the original measured wall thickness values of 25 wafers (each with a total of 21 wall thickness measurements), and Group B is based on the average of 25 wafers. The wall thickness value is calculated.

As can be seen from the above table, compared with the comparative example, the mean square deviation value decreased from 0.05 nm to 0.024 to 0.03 nm, which decreased by about 0.02 to 0.026 nm, indicating the deviation generated on different wafers. The uniformity of the wall thickness of the moving spacer (film layer) is increased. Moreover, the percentage of uniformity in the substrate (wafer) decreased from 0.95 to 0.86% to 0.63 to 0.46%, and the variation in wall thickness in a single wafer was reduced, indicating that the uniformity of wall thickness in a single wafer was also greatly improved. .

In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧Batch Process System

110‧‧‧First substrate

110a, 120a, 130a‧‧‧ first surface

110b, 120b‧‧‧ second surface

111, 121‧‧ ‧ layer

113‧‧‧pattern layer

115‧‧‧Oxide layer

120‧‧‧second substrate

123‧‧‧ nitride layer

130‧‧‧ Third substrate

150‧‧‧Pretreatment gas

160‧‧‧Reactive gas

160a‧‧‧First reaction gas

160b‧‧‧second reaction gas

180‧‧‧ film layer

400‧‧‧Semiconductor structure

410‧‧‧ gate structure

420‧‧‧ offset gap

Batch of B1~B4‧‧

D, M, P‧‧‧ areas

G1, G2, G3‧‧‧ gap

m, W01~W25‧‧‧ wafer

1A to 1B are flow charts showing a method of manufacturing a film layer according to an embodiment of the present invention.

2 is a schematic view of a batch processing system according to an embodiment of the present invention. Figure.

3A-3B are flow charts showing a manufacturing method for forming a film layer on different surfaces by atomic layer deposition.

4 is a schematic view showing a film layer applied to a semiconductor structure according to an embodiment of the present invention.

Fig. 5 is a view showing the film thickness distribution of a comparative example of the present invention.

Figure 6 is a diagram showing the film thickness distribution of an embodiment of the present invention.

110‧‧‧First substrate

110a, 120a, 130a‧‧‧ first surface

110b, 120b‧‧‧ second surface

111, 121‧‧ ‧ layer

113‧‧‧pattern layer

115‧‧‧Oxide layer

120‧‧‧second substrate

123‧‧‧ nitride layer

130‧‧‧ Third substrate

150‧‧‧Pretreatment gas

Claims (20)

A method for manufacturing a film layer of a batch process, comprising: providing a first substrate and a second substrate in a batch process system, wherein the first substrate is adjacent to the first surface a second surface of the second substrate, the first surface of the first substrate has a first surface state, the second surface of the second substrate has a second surface state, the first surface state and the second surface The surface state is different; providing a pretreatment gas on the surfaces of the substrates to convert the first surface state and the second surface state to a third surface state; and providing a reactive gas Forming a film on the surfaces of the substrates having the third surface state. The manufacturing method according to claim 1, wherein the first surface state, the second surface state, and the third surface state are respectively an oxygen rich state, a nitrogen rich state, One of the carbon rich state and the silicon rich state. The manufacturing method of claim 1, wherein the third surface state is the same as the first surface state or the second surface state. The manufacturing method of claim 1, wherein the pretreatment gas is supplied at a first operating pressure, the reaction gas is supplied at a second operating pressure, and the second operating pressure is less than the first operation. pressure. The manufacturing method of claim 4, wherein the method The first operating pressure is greater than 0.2 torr. The manufacturing method of claim 1, wherein the pretreatment gas system is ammonia (NH ₃ ). The manufacturing method of claim 1, wherein the film layer is formed on the substrates by chemical vapor deposition (CVD) or atomic layer deposition (ALD). Some on the surface. The manufacturing method of claim 7, wherein the reaction gas comprises a first reaction gas and a second reaction gas, and the step of forming the film layer by atomic layer deposition comprises: exposing the first substrate The first surface and the second surface of the second substrate are in the first reaction gas, the first reaction gas includes a nitrogen source precursor; and the first substrate is purged a surface and the second surface of the second substrate to drain the first reactive gas; exposing the first surface of the first substrate and the second surface of the second substrate to the second reactive gas, The second reaction gas is different from the first reaction gas system; the first surface of the first substrate and the second surface of the second substrate are purged to drain the second reaction gas; and the exposure and blowing are repeated The step of washing is until the film layer is formed, wherein the film layer is a nitride layer. The manufacturing method of claim 1, further comprising: providing a third substrate in the batch processing system, wherein the third substrate is adjacent to the first substrate by a first surface a surface or the The second surface of the second substrate, the first surface of the third substrate has a fourth surface state, the fourth surface state being different from at least one of the first surface state and the second surface state; Providing the pretreatment gas on the first surface of the third substrate to convert the fourth surface state to the third surface state; and providing the reactive gas to form the film layer on the third substrate The first surface is on the first surface. The manufacturing method according to claim 9, wherein the fourth surface state is one of an oxygen-rich state, a nitrogen-rich state, a carbon-rich state, and a rich state. A method for manufacturing a nitride layer, comprising: providing a first substrate and a second substrate, wherein the first substrate is adjacent to a second surface of the second substrate by a first surface, the first substrate The first surface has a first surface state, and the second surface of the second substrate has a second surface state, the first surface state and the second surface state being different; under a first operating pressure, Exposing the first surface of the first substrate and the second surface of the second substrate in a nitrogen-containing pretreatment gas; and atomizing at a second operating pressure The layer deposition method forms the nitride layer on the first surface of the first substrate and the second surface of the second substrate, wherein the second operating pressure is less than the first operating pressure. The manufacturing method of claim 11, wherein the first operating pressure is greater than 0.2 Torr. The manufacturing method of claim 11, wherein The second operating pressure is about 0.2 Torr. The manufacturing method according to claim 11, wherein the nitrogen-containing pretreatment gas system is ammonia gas. The manufacturing method of claim 11, wherein the first surface of the first substrate and the second surface of the second substrate are exposed to the nitrogen-containing pretreatment gas for about 10 minutes. The manufacturing method of claim 11, wherein the step of forming the nitride layer by atomic layer deposition comprises: exposing the first surface of the first substrate and the second surface of the second substrate to In the first reaction gas, the first reaction gas includes a nitrogen source precursor; the first surface of the first substrate and the second surface of the second substrate are purged to drain the first reaction gas; The first surface of the first substrate and the second surface of the second substrate are in a second reaction gas, the second reaction gas is different from the first reaction gas system; and the first substrate is purged a surface and the second surface of the second substrate to drain the second reactive gas; and repeating the steps of exposing and purging until the nitride layer is formed. The manufacturing method of claim 16, wherein the second reactive gas comprises a silicon source precursor. The manufacturing method of claim 16, wherein the step of forming the nitride layer by atomic layer deposition further comprises: exposing the first surface of the first substrate and the second substrate The second surface is in a third reaction gas, the third reaction gas is different from the first reaction gas and the second reaction gas system; and the first surface of the first substrate and the second substrate are purged The second surface is to drain the third reactive gas. The manufacturing method of claim 18, wherein the third reactive gas comprises a carbon source precursor. The manufacturing method of claim 11, further comprising: providing a third substrate, wherein the first substrate is adjacent to the first surface of the first substrate or the second substrate The second surface, the first surface of the third substrate has a fourth surface state, the fourth surface state being different from at least one of the first surface state and the second surface state; Exposing the first surface of the third substrate to the nitrogen-containing pretreatment gas under operating pressure; and forming the nitride layer on the third substrate by atomic layer deposition at the second operating pressure On the surface.