TW201411802A - Semiconductor package structure and interposer therefor - Google Patents

Semiconductor package structure and interposer therefor Download PDF

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Publication number
TW201411802A
TW201411802A TW101133001A TW101133001A TW201411802A TW 201411802 A TW201411802 A TW 201411802A TW 101133001 A TW101133001 A TW 101133001A TW 101133001 A TW101133001 A TW 101133001A TW 201411802 A TW201411802 A TW 201411802A
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TW
Taiwan
Prior art keywords
semiconductor package
package structure
adapter plate
bottom plate
substrate
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TW101133001A
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Chinese (zh)
Inventor
Shing-Ren Sheu
Shih-Chieh Huang
Ting-Chao Chou
Shang-Chi Wu
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United Microelectronics Corp
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Priority to TW101133001A priority Critical patent/TW201411802A/en
Publication of TW201411802A publication Critical patent/TW201411802A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

An interposer for a semiconductor package structure includes a base substrate, a plurality of passive devices formed on the base substrate, and an identification (ID) code. The base substrate includes a first surface and an opposite second surface. The ID code is formed on the first surface or the second surface.

Description

半導體封裝結構以及用於半導體封裝結構之轉接板 Semiconductor package structure and adapter plate for semiconductor package structure

本發明是關於一種半導體封裝結構以及用於半導體封裝結構之轉接板(interposer),尤指一種具有堆疊晶片之半導體封裝結構以及用於半導體封裝結構之轉接板。 The present invention relates to a semiconductor package structure and an interposer for a semiconductor package structure, and more particularly to a semiconductor package structure having a stacked wafer and an interposer for a semiconductor package structure.

隨著半導體裝置積集度與複雜度的攀升,半導體產業現常利用直通矽穿孔(through silicon via,以下簡稱為TSV)結構與轉接板(through silicon interpose(TSI))(亦或稱為「中介層」)將堆疊的晶粒電性連接,以縮短晶粒之間的距離、縮小元件尺寸,並增加整體的操作速度與運作頻寬。 As semiconductor devices accumulate and increase complexity, the semiconductor industry often uses through silicon vias (TSV) and through silicon interpose (TSI) (also known as "through"). The interposer "" electrically connects the stacked dies to shorten the distance between the dies, reduce the size of the components, and increase the overall operating speed and operating bandwidth.

雖然利用TSV結構與轉接板可提供高密度的水平或垂直晶片堆疊,但是轉接板內的電連續性(electric continuity)或電性表現卻非常難以檢測。因此,往往在完成半導體封裝結構的製作後方能藉由測試得知轉接板是否具有缺陷。然而,此時往往已無法追蹤具有缺陷的轉接板的批次為何,也因此無法得知相關缺陷是在哪一生產步驟或哪種生產環境下產生。 While the use of TSV structures and interposer boards provides high density horizontal or vertical wafer stacking, electrical continuity or electrical performance within the interposer board is very difficult to detect. Therefore, it is often possible to determine whether the adapter board has defects by testing after the fabrication of the semiconductor package structure is completed. However, at this time, it is often impossible to trace the batch of the defective adapter plate, and therefore it is impossible to know which production step or production environment the related defect is generated.

因此,本發明之一目的係在於提供一種半導體封裝結構以及用於半導體封裝結構之轉接板,可解決缺陷轉接板無法追蹤等問題。 Therefore, an object of the present invention is to provide a semiconductor package structure and an interposer for a semiconductor package structure, which can solve the problem that the defect interposer cannot be tracked.

根據本發明所提供之申請專利範圍,係提供一種用於半導體封裝結構之轉接板,該轉接板包含有一底板(base substrate)、複數個設置於該底板上之被動元件(passive device)、以及一形成於該底板上之識別碼(identification,ID code)。 According to the patent application scope of the present invention, an adapter board for a semiconductor package structure is provided, the adapter board includes a base substrate, a plurality of passive devices disposed on the bottom plate, And an identification (ID code) formed on the bottom plate.

根據本發明所提供之申請專利範圍,更提供一種半導體封裝結構,該半導體封裝結構包含有至少一功能晶粒(function die)、一承載基板(carrier substrate)、以及至少一轉接板。該轉接板係設置於該功能晶粒與該承載基板之間,並電性連接該功能晶粒與該承載基板,且該轉接板包含一識別碼。 According to the patent application scope provided by the present invention, there is further provided a semiconductor package structure comprising at least one function die, a carrier substrate, and at least one interposer. The adapter board is disposed between the functional die and the carrier substrate, and electrically connects the functional die and the carrier substrate, and the adapter plate includes an identification code.

根據本發明所提供之半導體封裝結構以及用於半導體封裝結構之轉接板,該轉接板上係設置有一識別碼,因此在後續進行測試後,若發現轉接板具有缺陷,則可經由轉接板上的識別碼輕易追蹤出是哪一批次產生問題,並可立即進行處理,故可增加半導體封裝結構的良率,並降低生產成本。 According to the semiconductor package structure provided by the present invention and the adapter board for the semiconductor package structure, the adapter board is provided with an identification code, so that after the subsequent test, if the adapter board is found to have defects, it can be transferred The identification code on the board easily traces which batch has a problem and can be processed immediately, thus increasing the yield of the semiconductor package structure and reducing the production cost.

請參閱第1圖,第1圖為本發明所提供之一用於半導體封裝結構之轉接板之一較佳實施例之剖面示意圖。如第1圖所示,本較佳實施例所提供的轉接板100包含一底板102,底板102可以是矽基板或一玻璃基板,或任何合適之基板。底板102具有一第一表面102a與一相對之第二表面102b。轉接板100更包含複數個被動元件110,例如積體電路所需的電容、電阻、電感、變壓器等,而無主動元件存在。如第1圖所示,轉接板100更包含複數個重佈層(Redistribution layer,以下簡稱為RDL)120,分別形成於底板102之第一表面102a與第二表面102b上。此外,轉接板100更包含複數個形成於底板102之第一表面102a上的微凸塊(micro bump)130,以及複數個形成於底板102之第二表面102b上之凸塊(bump)132。更重要的是,本較佳實施例所提供之轉接板100更包含複數個TSV結構140,用以電性連接微凸塊130至凸塊132。 Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing a preferred embodiment of an interposer for a semiconductor package structure according to the present invention. As shown in FIG. 1, the adapter plate 100 provided in the preferred embodiment includes a bottom plate 102, which may be a germanium substrate or a glass substrate, or any suitable substrate. The bottom plate 102 has a first surface 102a and an opposite second surface 102b. The interposer board 100 further includes a plurality of passive components 110, such as capacitors, resistors, inductors, transformers, etc. required for the integrated circuit, without active components. As shown in FIG. 1 , the adapter plate 100 further includes a plurality of redistribution layers (hereinafter referred to as RDLs) 120 respectively formed on the first surface 102 a and the second surface 102 b of the bottom plate 102 . In addition, the adapter plate 100 further includes a plurality of micro bumps 130 formed on the first surface 102a of the substrate 102, and a plurality of bumps 132 formed on the second surface 102b of the substrate 102. . More importantly, the adapter plate 100 provided in the preferred embodiment further includes a plurality of TSV structures 140 for electrically connecting the micro bumps 130 to the bumps 132.

接下來請參閱第2圖至第4圖,第2圖至第4圖為本發明所提供之用於半導體封裝結構之轉接板之不同實施例之部分上視圖。如第2圖所示,本較佳實施例所提供之轉接板100更包含一識別碼(identification,ID code)150,形成於底板102上。此外需注意的是,識別碼150可依製程或產品所需而形成於底板102的第一表面102a或第二表面102b。如 第2圖與第3圖所示,本較佳實施例所提供之識別碼150包含一金屬圖案,其可藉由於第一表面102a或第二表面102b上形成一金屬陣列圖案,隨後藉由雷射燒灼等方法修削(trim)掉金屬陣列圖案內的某些金屬層(例如第2圖與第3圖中的斜線圖案),而於第一表面102a或第二表面102b上形成具有特殊圖形的金屬圖案,用以作為本較佳實施例的識別碼150。值得注意的是,金屬圖案,或者說識別碼150,係可與前述之被動元件110同時製作,亦可與RDL 120內的金屬佈線同時製作,或與微凸塊130或凸塊132下方的凸塊下金屬(under bump metallization,UBM)層(圖未示),甚或與TSV結構140同時製作。換句話說,識別碼150可依產品與製程需求與上述元件之一同時製作於底板102表面102a/102b或表面102a/102b之上。如第2圖所示,在本較佳實施例中識別碼150係具有圖形為「80A」的金屬圖案;如第3圖所示,在本較佳實施例中識別碼150係具有圖形為「AF16」的金屬圖案。如第2圖與第3圖所示,設置於轉接板100上的識別碼150具有一特殊圖形,故可藉由光學顯微鏡或電性測試讀取。 Referring next to FIGS. 2 through 4, FIGS. 2 through 4 are partial top views of different embodiments of the adapter plate for a semiconductor package structure provided by the present invention. As shown in FIG. 2, the adapter board 100 of the preferred embodiment further includes an identification (ID code) 150 formed on the bottom plate 102. In addition, it should be noted that the identification code 150 may be formed on the first surface 102a or the second surface 102b of the bottom plate 102 as required by the process or product. Such as As shown in FIG. 2 and FIG. 3, the identification code 150 provided in the preferred embodiment includes a metal pattern by forming a metal array pattern on the first surface 102a or the second surface 102b, and then by using a A method of firing or the like trims off certain metal layers in the metal array pattern (for example, the diagonal lines in FIGS. 2 and 3), and forms a special pattern on the first surface 102a or the second surface 102b. The metal pattern is used as the identification code 150 of the preferred embodiment. It should be noted that the metal pattern, or identification code 150, may be fabricated simultaneously with the passive component 110 described above, or may be fabricated simultaneously with the metal wiring within the RDL 120, or with the bumps below the microbumps 130 or bumps 132. An under bump metallization (UBM) layer (not shown), or even fabricated simultaneously with the TSV structure 140. In other words, the identification code 150 can be fabricated on the surface 102a/102b or surface 102a/102b of the backplane 102 simultaneously with one of the above components, depending on the product and process requirements. As shown in Fig. 2, in the preferred embodiment, the identification code 150 has a metal pattern having a pattern of "80A"; as shown in Fig. 3, in the preferred embodiment, the identification code 150 has a pattern of " Metal pattern of AF16". As shown in Figures 2 and 3, the identification code 150 disposed on the interposer 100 has a special pattern so that it can be read by optical microscopy or electrical testing.

另外請參閱第4圖。在另外一較佳實施例中,識別碼150包含複數個熔絲(fuse)152,可依製程或產品所需而形成於底板102的第一表面102a或第二表面102b上。隨後利用雷射或電致遷移(electro-migration,EM)效應提供斷路條件,而於 轉接板100上形成如第4圖所示之識別碼150。換句話說,本較佳實施例所提供之熔絲152可為熱熔絲(thermal fuse)或電熔絲(e-fuse)。如第4圖所示,在本較佳實施例中識別碼150係例分為X組與Y組,且X組與Y組分別包含7個熔絲152。在X組中,最後三個熔絲152係被燒斷;而在Y組中,第三、第四與第六個熔絲152係被燒斷。因此,本較佳實施例中識別碼150係為某些熔絲被燒斷的特殊圖形,故可可藉由光學顯微鏡讀取。另外,由於未燒斷的熔絲152仍然提供電連續等條件,故本較佳實施例中轉接板100上的識別碼150更較佳藉由電性測試讀取。 See also Figure 4. In another preferred embodiment, the identification code 150 includes a plurality of fuses 152 that may be formed on the first surface 102a or the second surface 102b of the base plate 102 as required by the process or product. Subsequent use of laser or electro-migration (EM) effects to provide open circuit conditions, and An identification code 150 as shown in Fig. 4 is formed on the adapter board 100. In other words, the fuse 152 provided in the preferred embodiment may be a thermal fuse or an e-fuse. As shown in FIG. 4, in the preferred embodiment, the identification code 150 is divided into an X group and a Y group, and the X group and the Y group respectively include 7 fuses 152. In the X group, the last three fuses 152 are blown; and in the Y group, the third, fourth, and sixth fuses 152 are blown. Therefore, in the preferred embodiment, the identification code 150 is a special pattern in which some of the fuses are blown, so that it can be read by an optical microscope. In addition, since the unblowed fuse 152 still provides electrical continuity and the like, the identification code 150 on the adapter plate 100 in the preferred embodiment is more preferably read by electrical testing.

請參閱第5圖,第5圖為本發明所提供之一種半導體封裝結構之一較佳實施例之示意圖。如第5圖所示,本較佳實施例所提供之半導體封裝結構200包含至少一功能晶粒(function die)210。舉例來說,功能晶粒210可以是中央處理單元晶粒(central processing unit,CPU chip)或動態隨機存取記憶體晶粒(dynamic random access memory,DRAM chip)等。在本較佳實施例中,功能晶粒210本身亦可具有提供電性連接的TSV結構(圖未示)。半導體封裝結構200更包含一轉接板100,其包含底板102、被動元件110、RDL 120、微凸塊130、凸塊132、TSV結構140、以及識別碼150等。由於該等元件已分別揭露於前述實施例中,故於此係不再贅述,且不再繪示於第5圖中。如第5圖所示,功能晶粒210 可水平地設置於轉接板100上,由於微凸塊130係形成於功能晶粒210與底板100之間,故微凸塊130係提供功能晶粒210與轉接板100之間的電性連接。本較佳實施例所提供之半導體封裝結構200更包含一承載基板220,承載基板220可以是層壓基板(laminate substrate)或陶瓷基板(ceramic substrate),但不限於此。此外承載基板200更包含複數個銲球(solder ball)222,用以提供半導體封裝結構200與其他外部電路結構的電性連接。如第5圖所示,由於凸塊132係形成於底板100與承載基板220之間,故凸塊132係提供轉接板100與承載基板220之間的電性連接。簡單地說,設置於功能晶粒210與承載基板220之間的轉接板100係電性連接功能晶粒210與承載基板220。透過微凸塊130、凸塊132和TSV結構140,不同的功能晶粒120係整合於轉接板100上,再電性連接至承載基板220。這樣的半導體封裝結構200除了享有高密度與高整合度的優點之外,更具有製程風險較低,以及轉接板100應力(stress)管理效果佳等優點。 Please refer to FIG. 5. FIG. 5 is a schematic diagram of a preferred embodiment of a semiconductor package structure according to the present invention. As shown in FIG. 5, the semiconductor package structure 200 provided by the preferred embodiment includes at least one function die 210. For example, the functional die 210 may be a central processing unit (CPU chip) or a dynamic random access memory (DRAM). In the preferred embodiment, the functional die 210 itself may also have a TSV structure (not shown) that provides an electrical connection. The semiconductor package structure 200 further includes an interposer 100 including a bottom plate 102, a passive component 110, an RDL 120, a microbump 130, a bump 132, a TSV structure 140, an identification code 150, and the like. Since these components have been separately disclosed in the foregoing embodiments, they are not described herein again, and are not illustrated in FIG. 5. As shown in Figure 5, the functional die 210 The microbumps 130 are electrically connected between the functional die 210 and the interposer 100. The microbumps 130 are formed between the functional die 210 and the backplane 100. connection. The semiconductor package structure 200 provided by the preferred embodiment further includes a carrier substrate 220. The carrier substrate 220 may be a laminate substrate or a ceramic substrate, but is not limited thereto. In addition, the carrier substrate 200 further includes a plurality of solder balls 222 for providing electrical connection between the semiconductor package structure 200 and other external circuit structures. As shown in FIG. 5 , since the bump 132 is formed between the bottom plate 100 and the carrier substrate 220 , the bump 132 provides an electrical connection between the adapter plate 100 and the carrier substrate 220 . Briefly, the interposer 100 disposed between the functional die 210 and the carrier substrate 220 electrically connects the functional die 210 and the carrier substrate 220. Through the microbumps 130, the bumps 132 and the TSV structure 140, the different functional dies 120 are integrated on the interposer 100 and electrically connected to the carrier substrate 220. In addition to the advantages of high density and high integration, such a semiconductor package structure 200 has the advantages of low process risk and good stress management effect of the interposer board 100.

縱上所述,由於轉接板是在整個半導體封裝結構後完成製作後,方得以藉由電性檢測得知轉接板的電連續性或電性表現。因此,本發明係於轉接板上更設置有可供光學顯微鏡或電性測驗讀取的識別碼。當轉接板經由電性檢測被判定具有缺陷時,即可根據轉接板上的識別碼輕易地得知是哪一批次的轉接板具有缺陷,並可立即進行處理,故可增加半導體 封裝結構的良率,並降低生產成本。 In the longitudinal direction, since the adapter plate is fabricated after the entire semiconductor package structure, the electrical continuity or electrical performance of the adapter plate can be known by electrical detection. Therefore, the present invention is further provided with an identification code for reading by an optical microscope or an electrical test on the transfer board. When the adapter board is determined to have a defect via electrical detection, it can be easily known according to the identification code on the adapter board which batch of the adapter board has defects and can be processed immediately, so that the semiconductor can be added. The yield of the package structure and the production cost are reduced.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

100‧‧‧轉接板 100‧‧‧Adapter plate

102‧‧‧底板 102‧‧‧floor

102a‧‧‧第一表面 102a‧‧‧ first surface

102b‧‧‧第二表面 102b‧‧‧second surface

110‧‧‧被動元件 110‧‧‧ Passive components

120‧‧‧重佈層 120‧‧‧Re-layer

130‧‧‧微凸塊 130‧‧‧Microbumps

132‧‧‧凸塊 132‧‧‧Bumps

140‧‧‧直通矽穿孔結構 140‧‧‧through through-hole perforated structure

150‧‧‧識別碼 150‧‧‧ID

152‧‧‧熔絲 152‧‧‧Fuse

200‧‧‧半導體封裝結構 200‧‧‧Semiconductor package structure

210‧‧‧功能晶粒 210‧‧‧ functional grain

220‧‧‧承載基板 220‧‧‧bearing substrate

222‧‧‧銲球 222‧‧‧ solder balls

第1圖為本發明所提供之一用於半導體封裝結構之轉接板之一較實施例之剖面示意圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing one embodiment of an interposer for a semiconductor package structure according to the present invention.

第2圖至第4圖為本發明所提供之用於半導體封裝結構之轉接板之不同實施例之部分上視圖。 2 to 4 are partial top views of different embodiments of an adapter plate for a semiconductor package structure provided by the present invention.

第5圖為本發明所提供之一種半導體封裝結構之一較佳實施例之示意圖。 FIG. 5 is a schematic view showing a preferred embodiment of a semiconductor package structure according to the present invention.

100‧‧‧轉接板 100‧‧‧Adapter plate

102‧‧‧底板 102‧‧‧floor

102a‧‧‧第一表面 102a‧‧‧ first surface

102b‧‧‧第二表面 102b‧‧‧second surface

110‧‧‧被動元件 110‧‧‧ Passive components

120‧‧‧重佈層 120‧‧‧Re-layer

130‧‧‧微凸塊 130‧‧‧Microbumps

132‧‧‧凸塊 132‧‧‧Bumps

140‧‧‧直通矽穿孔結構 140‧‧‧through through-hole perforated structure

150‧‧‧識別碼 150‧‧‧ID

Claims (20)

一種用於半導體封裝結構之轉接板,包含有:一底板(base substrate);複數個被動元件(passive device),設置於該底板上;以及一識別碼(identification,ID code),形成於該底板上。 An adapter board for a semiconductor package structure, comprising: a base substrate; a plurality of passive devices disposed on the bottom plate; and an identification code (ID code) formed on the base plate On the bottom plate. 如申請專利範圍第1項所述之轉接板,其中該識別碼包含一金屬圖案,形成於該底板之一表面上。 The adapter plate of claim 1, wherein the identification code comprises a metal pattern formed on a surface of the bottom plate. 如申請專利範圍第2項所述之轉接板,其中該金屬圖案係藉由光學顯微鏡或電性測試讀取。 The adapter plate of claim 2, wherein the metal pattern is read by optical microscopy or electrical test. 如申請專利範圍第1項所述之轉接板,其中該識別碼包含複數個熔絲(fuse),形成於該底板之一表面上。 The adapter plate of claim 1, wherein the identification code comprises a plurality of fuses formed on a surface of the bottom plate. 如申請專利範圍第4項所述之轉接板,其中該等熔絲係藉由光學顯微鏡或電性測試讀取。 The adapter plate of claim 4, wherein the fuses are read by optical microscopy or electrical testing. 如申請專利範圍第1項所述之轉接板,更包含複數層重佈層(Redistribution layer,RDL),分別形成於該底板之一第一表面與一第二表面上。 The adapter plate of claim 1, further comprising a plurality of redistribution layers (RDL) formed on one of the first surface and the second surface of the bottom plate. 如申請專利範圍第6項所述之轉接板,更包含複數個形 成於該底板之該第一表面上之微凸塊(micro bump),以及複數個形成於該底板之該第二表面上之凸塊(bump)。 The adapter plate described in claim 6 of the patent application further includes a plurality of shapes a micro bump formed on the first surface of the bottom plate, and a plurality of bumps formed on the second surface of the bottom plate. 如申請專利範圍第7項所述之轉接板,更包含複數個直通矽穿孔(through silicon via,TSV)結構,電性連接該等微凸塊至該等凸塊。 The adapter plate of claim 7, further comprising a plurality of through silicon via (TSV) structures electrically connecting the microbumps to the bumps. 如申請專利範圍第1項所述之轉接板,其中該底板包含一矽基板或一玻璃基板。 The adapter plate of claim 1, wherein the bottom plate comprises a substrate or a glass substrate. 一種半導體封裝結構,包含有:至少一功能晶粒(function die);一承載基板(carrier substrate);以及至少一轉接板,設置於該功能晶粒與該承載基板之間,該轉接板電性連接該功能晶粒與該承載基板,且該轉接板包含一識別碼。 A semiconductor package structure comprising: at least one function die; a carrier substrate; and at least one interposer disposed between the functional die and the carrier substrate, the interposer The functional die and the carrier substrate are electrically connected, and the adapter board includes an identification code. 如申請專利範圍第10項所述之半導體封裝結構,其中該轉接板更包含一底板。 The semiconductor package structure of claim 10, wherein the adapter plate further comprises a bottom plate. 如申請專利範圍第11項所述之半導體封裝結構,其中該底板包含一矽基板或一玻璃基板。 The semiconductor package structure of claim 11, wherein the substrate comprises a germanium substrate or a glass substrate. 如申請專利範圍第11項所述之半導體封裝結構,其中該轉接板更包含複數層重佈層,分別形成於該底板之相對兩表面上。 The semiconductor package structure of claim 11, wherein the adapter plate further comprises a plurality of layer redistribution layers respectively formed on opposite surfaces of the bottom plate. 如申請專利範圍第13項所述之半導體封裝結構,其中該轉接板更包含複數個形成於該底板與該功能晶粒之間的微凸塊,以及複數個形成於該底板與該承載基板之間的凸塊。 The semiconductor package structure of claim 13, wherein the adapter plate further comprises a plurality of microbumps formed between the bottom plate and the functional die, and a plurality of the substrate and the carrier substrate are formed on the substrate Bumps between. 如申請專利範圍第14項所述之半導體封裝結構,其中該轉接板更包含複數個直通矽穿孔結構,電性連接該等微凸塊至該等凸塊。 The semiconductor package structure of claim 14, wherein the adapter plate further comprises a plurality of through-hole perforated structures electrically connecting the micro-bumps to the bumps. 如申請專利範圍第10項所述之半導體封裝結構,其中該識別碼包含一金屬圖案,形成於該轉接板之一表面上。 The semiconductor package structure of claim 10, wherein the identification code comprises a metal pattern formed on a surface of the interposer. 如申請專利範圍第16項所述之半導體封裝結構,其中該金屬圖案係藉由光學顯微鏡或電性測試讀取。 The semiconductor package structure of claim 16, wherein the metal pattern is read by optical microscopy or electrical test. 如申請專利範圍第10項所述之半導體封裝結構,其中該識別碼包含複數個熔絲,形成於該轉接板之一表面上。 The semiconductor package structure of claim 10, wherein the identification code comprises a plurality of fuses formed on a surface of the adapter plate. 如申請專利範圍第18項所述之半導體封裝結構,其中 該等熔絲係藉由光學顯微鏡或電性測試讀取。 The semiconductor package structure as claimed in claim 18, wherein These fuses are read by optical microscopy or electrical testing. 如申請專利範圍第10項所述之半導體封裝結構,其中該轉接板更包含複數個被動元件。 The semiconductor package structure of claim 10, wherein the adapter plate further comprises a plurality of passive components.
TW101133001A 2012-09-10 2012-09-10 Semiconductor package structure and interposer therefor TW201411802A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678770B (en) * 2015-04-23 2019-12-01 美商帕洛阿爾托研究中心公司 Transient electronic device with ion-exchanged glass treated interposer
CN111244053A (en) * 2018-11-28 2020-06-05 美光科技公司 Interposer for connecting microelectronic devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678770B (en) * 2015-04-23 2019-12-01 美商帕洛阿爾托研究中心公司 Transient electronic device with ion-exchanged glass treated interposer
CN111244053A (en) * 2018-11-28 2020-06-05 美光科技公司 Interposer for connecting microelectronic devices
US11824010B2 (en) 2018-11-28 2023-11-21 Micron Technology, Inc. Interposers for microelectronic devices
CN111244053B (en) * 2018-11-28 2024-09-06 美光科技公司 Interposer for connecting microelectronic devices

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