TW201410745A - Curable silicone composition, method for producing semiconductor device, and semiconductor device - Google Patents

Curable silicone composition, method for producing semiconductor device, and semiconductor device Download PDF

Info

Publication number
TW201410745A
TW201410745A TW102132492A TW102132492A TW201410745A TW 201410745 A TW201410745 A TW 201410745A TW 102132492 A TW102132492 A TW 102132492A TW 102132492 A TW102132492 A TW 102132492A TW 201410745 A TW201410745 A TW 201410745A
Authority
TW
Taiwan
Prior art keywords
composition
semiconductor device
group
component
sio
Prior art date
Application number
TW102132492A
Other languages
Chinese (zh)
Inventor
Hiroaki Yoshida
Yusuke Miyamoto
Makoto Yoshitake
Shin Yoshida
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Publication of TW201410745A publication Critical patent/TW201410745A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/20—Making multilayered or multicoloured articles
    • B29C43/203—Making multilayered articles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J143/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Adhesives based on derivatives of such polymers
    • C09J143/04—Homopolymers or copolymers of monomers containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • B29C2043/181—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated
    • B29C2043/182—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated completely
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0037—Other properties
    • B29K2995/007—Hardness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2009/00—Layered products
    • B29L2009/005—Layered products coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)

Abstract

The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane composed of: (A-1) a linear organopolysiloxane having at least two silicon-bonded alkenyl groups in a molecule, and (A-2) a resin-like organopolysiloxane including 1.5 to 5.0% by weight alkenyl groups; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule; (C) a linear dialkyl polysiloxane having a viscosity at 25 DEG C of 2 to 10 mm<SP>2</SP>/s and having alkenyl groups capping both molecular chain terminals; and (D) a hydrosilylation reaction catalyst. The curable silicone composition forms a cured product having low surface tackiness and a low coefficient of friction.

Description

可硬化性聚矽氧組合物、半導體裝置之製造方法及半導體裝置 Curable polyoxynitride composition, method of manufacturing semiconductor device, and semiconductor device

本發明係關於一種可硬化性聚矽氧組合物，一種利用該組合物製造半導體裝置之方法，及依此方法所獲得之半導體裝置。 The present invention relates to a curable polydecene oxide composition, a method of fabricating a semiconductor device using the composition, and a semiconductor device obtained by the method.

本發明主張2012年9月10日申請之日本專利申請案號2012-198803之優先權，其內容係以引用的方式併入本文中。 The present invention claims priority to Japanese Patent Application No. 2012-198803, filed on Sep. 2010, the content of which is hereby incorporated by reference.

由作為主要組分之二甲基聚矽氧烷所組成之可硬化性聚矽氧組合物係用於各種類型之應用，此乃因其形成具有極佳類橡膠性質(即硬度、伸長率、或類似)及具有諸如耐候性、耐熱性、或類似之特性之硬化產品。可硬化性聚矽氧組合物尤其係作為密封劑用於半導體裝置，此乃因其形成具有低折射率之透明硬化產品。然而，問題在於此硬化產品表面之黏性極高，故灰塵極易附著至經可硬化性聚矽氧組合物密封之半導體裝置，及切屑極易附著至藉由依刀片切割步驟切割以此硬化產品所密封之半導體裝置呈個別半導體裝置形式獲得之半導體裝置。除此之外，亦存在由於所切得半導體裝置彼此黏著所致之處理及可加工性變差的問題。 A hardenable polyoxyxene composition composed of dimethylpolysiloxane as a main component is used for various types of applications because of its excellent rubber-like properties (ie, hardness, elongation, Or similar) and a hardened product having properties such as weather resistance, heat resistance, or the like. The hardenable polyoxyl composition is especially used as a sealant for a semiconductor device because it forms a transparent hardened product having a low refractive index. However, the problem is that the viscosity of the surface of the hardened product is extremely high, so that the dust is easily attached to the semiconductor device sealed by the hardenable polyoxyl composition, and the chips are easily attached to the hardened product by cutting according to the blade cutting step. The sealed semiconductor device is a semiconductor device obtained in the form of an individual semiconductor device. In addition to this, there is also a problem that processing and workability due to the adhesion of the cut semiconductor devices to each other are deteriorated.

日本未審查專利申請公開案號2009-052038及2010-174234提出一種用於形成具有高折射率而無表面黏性之高度透明硬化產品之可硬化性聚矽氧組合物，其中該組合物包含：(A)有機聚矽氧烷，由以下所 組成：(A-1)具有矽鍵結烯基之二烷基聚矽氧烷，及(A-2)具有矽鍵結烯基之類樹脂有機聚矽氧烷；(B)具有矽鍵結氫原子及具有作為除了氫原子之外之矽鍵結基團之包含1至10個碳原子之烯基之有機聚矽氧烷；及(C)矽氫化反應觸媒。 Japanese Unexamined Patent Application Publication No. 2009-052038 and No. 2010-174234 propose a hardenable polyoxyxene composition for forming a highly transparent hardened product having a high refractive index without surface tack, wherein the composition comprises: (A) organopolyoxane, by the following Composition: (A-1) a dialkyl polyoxyalkylene having a fluorenyl bonded alkenyl group, and (A-2) a resin organopolyoxyalkylene having a fluorenyl bonded alkenyl group; (B) having a fluorene bond a hydrogen atom and an organopolyoxyalkylene having an alkenyl group having 1 to 10 carbon atoms as a bonding group other than a hydrogen atom; and (C) a hydrogenation reaction catalyst.

然而，當使用分別在專利案文件中述及之可硬化性聚矽氧組合物密封半導體裝置時，發現問題在於灰塵極易附著至所獲得的半導體裝置，及該等半導體裝置彼此附著以致後續處理及可加工性不良。 However, when the semiconductor device is sealed using the hardenable polyoxyl composition described in the patent documents, the problem is found that dust is highly attached to the obtained semiconductor device, and the semiconductor devices are attached to each other for subsequent processing. And poor processability.

本發明之一目標係提供一種形成具有低表面黏性及小摩擦係數之硬化產品之可硬化性聚矽氧組合物。本發明之另一目標係提供一種用於製造半導體裝置之方法，其可抗灰塵黏著同時可抗半導體裝置黏著在一起，及提供此種半導體裝置。 It is an object of the present invention to provide a hardenable polyoxyxene composition which forms a hardened product having a low surface tack and a low coefficient of friction. Another object of the present invention is to provide a method for fabricating a semiconductor device that is resistant to dust adhesion while being resistant to adhesion of semiconductor devices, and to provide such a semiconductor device.

本發明之可硬化性聚矽氧組合物包含：(A)100質量份之有機聚矽氧烷，由以下所組成：(A-1)30至70質量%之直鏈有機聚矽氧烷，其在25℃時具有10至100,000mPa．s之黏度，其每分子中具有至少兩個矽鍵結烯基，及除了烯基之外之各矽鍵結基團獨立地選自包含1至10個碳原子之烷基，及(A-2)70至30質量%之類樹脂有機聚矽氧烷，其具有1.5至5.0質量%之烯基，及包含SiO4/2單元、R1 2R2SiO1/2單元、及R1 3SiO1/2單元，其中各R1獨立地為選自包含1至10個碳原子之烷基之基團，及R2為烯基；(B)每分子中具有至少兩個矽鍵結氫原子之有機聚矽氧烷，及除了氫原子之外之各矽鍵結基團獨立地選自包含1至10個碳原子之烷基，其量使得含於組分(B)中之矽鍵結氫原子含量相對1莫耳含於組分(A)中之總烯基在0.5至5莫耳範圍內；(C)0.5至12質量份之直鏈二烷基聚矽氧烷，其在25℃時具有2至 10mm2/s之黏度及其分子鏈兩端具有烯基封端；及(D)催化量之矽氫化反應觸媒。 The curable polyxanthoxy composition of the present invention comprises: (A) 100 parts by mass of an organopolyoxane composed of (A-1) 30 to 70% by mass of a linear organopolyoxane, It has 10 to 100,000 mPa at 25 °C. a viscosity of s having at least two fluorene-bonded alkenyl groups per molecule, and each oxime-bonding group other than an alkenyl group is independently selected from an alkyl group having 1 to 10 carbon atoms, and (A- 2) a resin organic polysiloxane having 70 to 30% by mass, having 1.5 to 5.0% by mass of an alkenyl group, and comprising a SiO 4/2 unit, an R 1 2 R 2 SiO 1/2 unit, and R 1 3 a SiO 1/2 unit, wherein each R 1 is independently a group selected from an alkyl group having 1 to 10 carbon atoms, and R 2 is an alkenyl group; (B) has at least two fluorene-bonded hydrogen atoms per molecule. The organopolysiloxane of the atom, and the ruthenium linkage group other than the hydrogen atom are independently selected from an alkyl group having 1 to 10 carbon atoms in an amount such that the ruthenium bond contained in the component (B) a hydrogen atom content of from 1 to 5 moles per mole of total alkenyl group contained in component (A); (C) from 0.5 to 12 parts by mass of linear dialkyl polysiloxane, It has a viscosity of 2 to 10 mm 2 /s at 25 ° C and an alkenyl end cap at both ends of the molecular chain; and (D) a catalytic amount of a hydrogenation reaction catalyst.

用於製造本發明半導體裝置之方法包括藉由上述可硬化性聚矽氧組合物密封半導體元件之步驟。 The method for fabricating the semiconductor device of the present invention comprises the step of sealing the semiconductor device by the above-described curable polyoxyn composition.

另外，本發明之半導體裝置係依上述方法獲得。 Further, the semiconductor device of the present invention is obtained by the above method.

本發明之可硬化性聚矽氧組合物的特徵是形成具有低表面黏性及低摩擦係數之硬化產品。除此之外，用於製造本發明半導體裝置之方法的特徵在於：該方法能夠具良好效率地製造可抗灰塵黏著及可抗彼此黏著之半導體裝置。另外，本發明之半導體裝置的特徵在於該等半導體裝置可抗灰塵黏著及可抗彼此黏著。 The curable polyxanthene composition of the present invention is characterized by forming a hardened product having a low surface viscosity and a low coefficient of friction. In addition to this, the method for manufacturing the semiconductor device of the present invention is characterized in that the method can efficiently manufacture a semiconductor device which is resistant to dust adhesion and which is resistant to adhesion to each other. Further, the semiconductor device of the present invention is characterized in that the semiconductor devices are resistant to dust adhesion and are resistant to adhesion to each other.

1‧‧‧支撐本體 1‧‧‧Support ontology

2‧‧‧LED晶片 2‧‧‧LED chip

3‧‧‧結合導線 3‧‧‧Combined wires

4‧‧‧模具 4‧‧‧Mold

5‧‧‧離型膜 5‧‧‧ release film

6‧‧‧可硬化性聚矽氧組合物 6‧‧‧hardenable polyoxyl composition

7‧‧‧硬化產品 7‧‧‧ hardened products

圖1為在藉由可硬化性聚矽氧組合物密封之前之半導體裝置的局部截面圖。 1 is a partial cross-sectional view of a semiconductor device prior to being sealed by a hardenable polyoxyn composition.

圖2為顯示使用可硬化性聚矽氧組合物來填充模具之前之狀態的局部截面圖。 2 is a partial cross-sectional view showing a state before a mold is filled using a hardenable polyoxymethylene composition.

圖3為顯示使用可硬化性聚矽氧組合物來填充模具之後之狀態的局部截面圖。 Fig. 3 is a partial cross-sectional view showing a state after a mold is filled using a hardenable polyoxynitride composition.

圖4為顯示可硬化性聚矽氧組合物之壓縮模製的局部截面圖。 4 is a partial cross-sectional view showing compression molding of a hardenable polyoxyn composition.

圖5為與硬化產品整合之半導體裝置的局部截面圖。 Figure 5 is a partial cross-sectional view of a semiconductor device integrated with a hardened product.

圖6為與硬化產品整合之其他半導體裝置的局部截面圖。 Figure 6 is a partial cross-sectional view of another semiconductor device integrated with a hardened product.

圖7為與硬化產品整合之再其他半導體裝置的局部截面圖。 Figure 7 is a partial cross-sectional view of yet another semiconductor device integrated with a hardened product.

首先，將詳細說明本發明之可硬化性聚矽氧組合物。 First, the curable polyoxyxene composition of the present invention will be described in detail.

就組分(A)而言之有機聚矽氧烷為本發明組合物之主要組分，及係由以下所組成：(A-1)30至70質量%之直鏈有機聚矽氧烷，其在25℃ 時具有10至100,000mPa．s之黏度，其每分子中具有至少兩個矽鍵結烯基，及除了烯基之外之各矽鍵結基團獨立地選自包含1至10個碳原子之烷基；及(A-2)70至30質量%之類樹脂有機聚矽氧烷，其具有1.5至5.0質量%烯基及其包含SiO4/2單元、R1 2R2SiO1/2單元、及R1 3SiO1/2單元，於該結構式中，各R1獨立地為選自包含1至10個碳原子之烷基之基團，及R2為烯基。 The organopolyoxyalkylene as far as the component (A) is a main component of the composition of the present invention, and is composed of (A-1) 30 to 70% by mass of a linear organopolyoxane, It has 10 to 100,000 mPa at 25 °C. a viscosity of s having at least two fluorene-bonded alkenyl groups per molecule, and each oxime-bonding group other than an alkenyl group is independently selected from an alkyl group having 1 to 10 carbon atoms; and (A- 2) a resin organic polysiloxane having 70 to 30% by mass, which has 1.5 to 5.0% by mass of an alkenyl group and a SiO 4/2 unit, an R 1 2 R 2 SiO 1/2 unit, and an R 1 3 SiO group. 1/2 units, in the formula, each R 1 is independently selected from the group comprising alkyl of 1 to 10 carbon atoms, and R 2 is an alkenyl group.

組分(A-1)為賦予本發明組合物之硬化產品塑性之組分。組分(A-1)中之烯基為例如乙烯基、烯丙基、異丙烯基、丁烯基、己烯基、及環己烯基。組分(A-1)中之烯基較佳為包含2至10個碳原子之烯基，及尤佳為乙烯基。對直鏈聚有機矽氧烷中該烯基之鍵結位置無特定限制。該烯基可與分子鏈末端處矽原子或分子鏈中矽原子中任一者鍵結，或該等烯基可與分子鏈末端處矽原子及分子鏈中矽原子二者鍵結。組分(A-1)中之烷基為例如甲基、乙基、丙基、環戊基、環己基、或包含1至10個碳原子之類似烷基。組分(A-1)中之烷基較佳為甲基。雖然組分(A-1)之分子結構較佳係實質上直鏈，但分子鏈之一部分可係少許分支化。 Component (A-1) is a component which imparts plasticity to the hardened product of the composition of the present invention. The alkenyl group in the component (A-1) is, for example, a vinyl group, an allyl group, an isopropenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. The alkenyl group in the component (A-1) is preferably an alkenyl group having 2 to 10 carbon atoms, and particularly preferably a vinyl group. There is no particular limitation on the bonding position of the alkenyl group in the linear polyorganosiloxane. The alkenyl group may be bonded to any one of a deuterium atom at the end of the molecular chain or a deuterium atom in the molecular chain, or the alkenyl group may be bonded to both a deuterium atom at the end of the molecular chain and a deuterium atom in the molecular chain. The alkyl group in the component (A-1) is, for example, a methyl group, an ethyl group, a propyl group, a cyclopentyl group, a cyclohexyl group, or a similar alkyl group having 1 to 10 carbon atoms. The alkyl group in the component (A-1) is preferably a methyl group. Although the molecular structure of the component (A-1) is preferably substantially linear, one part of the molecular chain may be branched a little.

組分(A-1)於25℃時之黏度在10至100,000mPa．s範圍內，較佳在20至10,000mPa．s範圍內，及尤佳在40至3,000mPa．s範圍內。當在25℃時組分(A-1)之黏度大於或等於上述範圍下限時，獲得具有所需可撓性之硬化產品。另一方面，當在25℃時組分(A-1)之黏度小於上述範圍上限時，獲得具有良好處理及可加工性之組合物。 The viscosity of component (A-1) at 25 ° C is 10 to 100,000 mPa. Within the range of s, preferably between 20 and 10,000 mPa. Within the range of s, and especially better at 40 to 3,000 mPa. Within the scope of s. When the viscosity of the component (A-1) at 25 ° C is greater than or equal to the lower limit of the above range, a hardened product having a desired flexibility is obtained. On the other hand, when the viscosity of the component (A-1) at 25 ° C is less than the upper limit of the above range, a composition having good handling and workability is obtained.

此類型之組分(A-1)為例如分子鏈兩端具有二甲基乙烯基矽氧基封端之聚二甲基矽氧烷、分子鏈兩端具有二甲基乙烯基矽氧基封端之二甲基矽氧烷-甲基乙烯基矽氧烷共聚物、分子鏈兩端具有三甲基矽氧基封端之甲基乙烯基聚矽氧烷、分子鏈兩端具有三甲基矽氧基封端之二甲基矽氧烷-甲基乙烯基矽氧烷共聚物、及兩種或更多種該等化 合物之混合物。 Component (A-1) of this type is, for example, a polydimethylsiloxane having a dimethylvinyloxyl-terminated end at both ends of the molecular chain, and a dimethylvinyloxy group at both ends of the molecular chain. a dimethyl methoxy alkane-methylvinyl fluorene copolymer having a trimethyl methoxy-terminated methyl vinyl polyoxy siloxane at both ends of the molecular chain and a trimethyl group at both ends of the molecular chain a methoxy-terminated dimethyl methoxy oxane-methylvinyl fluorene copolymer, and two or more of these a mixture of compounds.

組分(A-2)為賦予基板黏著性及賦予本發明組合物之硬化產品強度之組分，及為由SiO4/2單元、R1 2R2SiO1/2單元、及R1 3SiO1/2單元所組成之類樹脂有機聚矽氧烷。於該結構式中，各R1獨立地為選自包含1至10個碳原子之烷基之基團，實例為甲基、乙基、丙基、環戊基、環己基、或類似。於該結構式中，各R2獨立地為諸如乙烯基、烯丙基、異丙烯基、丁烯基、己烯基、環己烯基、或類似之烯基。R2進一步佳為選自包含2至10個碳原子之烯基之基團，及尤佳為乙烯基。組分(A-2)包含1.5至5.0質量%烯基，及較佳包含2.0至4.0質量%烯基。當在組分(A-2)中之烯基含量大於或等於上述範圍下限時，所獲得之硬化產品可具有所需的高硬度。另一方面，當在該烯基含量小於或等於上述範圍上限時，所獲得硬化產品具有所需可撓性。詞句「質量%烯基」係指烯基在轉化成乙烯基(CH2=CH-)後所計算得之佔總組分的質量%。 Component (A-2) is a component which imparts adhesion to the substrate and imparts strength to the hardened product of the composition of the present invention, and is composed of SiO 4/2 unit, R 1 2 R 2 SiO 1/2 unit, and R 1 3 A resin organic polyoxane composed of a SiO 1/2 unit. In the formula, each R 1 is independently a group selected from an alkyl group having 1 to 10 carbon atoms, and examples are a methyl group, an ethyl group, a propyl group, a cyclopentyl group, a cyclohexyl group, or the like. In the formula, each R 2 is independently an alkenyl group such as a vinyl group, an allyl group, an isopropenyl group, a butenyl group, a hexenyl group, a cyclohexenyl group, or the like. R 2 is further preferably a group selected from an alkenyl group having 2 to 10 carbon atoms, and particularly preferably a vinyl group. Component (A-2) contains 1.5 to 5.0% by mass of an alkenyl group, and preferably contains 2.0 to 4.0% by mass of an alkenyl group. When the alkenyl content in the component (A-2) is greater than or equal to the lower limit of the above range, the obtained hardened product may have a desired high hardness. On the other hand, when the alkenyl content is less than or equal to the upper limit of the above range, the obtained hardened product has desired flexibility. The phrase "mass% alkenyl" refers to the mass % of the total component calculated by the alkenyl group after conversion to the vinyl group (CH 2 =CH-).

此外，雖然對組分(A-2)中相對1莫耳SiO4/2單元之R1 2R2SiO1/2單元及R1 3SiO1/2單元之總莫耳數無特定限制，但此數值較佳在0.5至1.4範圍內，進一步佳在0.6至1.3範圍內，及尤佳在0.7至1.2範圍內。當在相對1莫耳SiO4/2單元之R1 2R2SiO1/2單元及R1 3SiO1/2單元之總莫耳數大於或等於上述範圍下限時，獲得具有較佳處理及加工能力之組合物。另一方面，當在相對1莫耳SiO4/2單元之R1 2R2SiO1/2單元及R1 3SiO1/2單元之總莫耳數小於或等於上述範圍上限時，獲得具有較佳可撓性之硬化產品。 Further, although there is no particular limitation on the total number of moles of the R 1 2 R 2 SiO 1/2 unit and the R 1 3 SiO 1/2 unit in the component (A-2) relative to 1 mol of the SiO 4/2 unit, However, the value is preferably in the range of 0.5 to 1.4, further preferably in the range of 0.6 to 1.3, and particularly preferably in the range of 0.7 to 1.2. When the total number of moles of the R 1 2 R 2 SiO 1/2 unit and the R 1 3 SiO 1/2 unit in the relative 1 mol SiO 4/2 unit is greater than or equal to the lower limit of the above range, a better treatment and A composition of processing capabilities. On the other hand, when the total number of moles of the R 1 2 R 2 SiO 1/2 unit and the R 1 3 SiO 1/2 unit in the relative 1 mol SiO 4/2 unit is less than or equal to the upper limit of the above range, A preferred flexible hardened product.

雖然對組分(A-2)之分子量無特定限制，但經轉化成標準聚苯乙烯及藉由凝膠滲透層析測得之質量平均分子量較佳在3,000至7,000範圍內，及更佳在4,000至6,000範圍內。此外，組分(A-2)可為兩種或更多種類型有機聚矽氧烷之混合物。當在組分(A-2)為兩種或更多種類 型有機聚矽氧烷之混合物時，經轉化成標準聚苯乙烯藉由凝膠滲透層析所測得之質量平均分子量之平均值較佳在上述範圍內。 Although the molecular weight of the component (A-2) is not particularly limited, the mass average molecular weight measured by conversion to standard polystyrene and by gel permeation chromatography is preferably in the range of 3,000 to 7,000, and more preferably Within the range of 4,000 to 6,000. Further, the component (A-2) may be a mixture of two or more types of organopolyoxane. When there are two or more species in component (A-2) The average of the mass average molecular weights measured by gel permeation chromatography after conversion into a standard polystyrene is preferably within the above range.

組分(A)係由30至70質量%之組分(A-1)與70至30質量%之組分(A-2)所組成，及較佳係由35至65質量%組分之(A-1)與35至65質量%之組分(A-2)所組成。當在組分(A-1)含量大於或等於上述範圍下限時，獲得具有良好處理及加工能力之組合物。另一方面，當在組合物小於或等於上述範圍上限時，獲得具有良好可撓性之硬化產品。 Component (A) is composed of 30 to 70% by mass of component (A-1) and 70 to 30% by mass of component (A-2), and preferably 35 to 65% by mass of component. (A-1) is composed of 35 to 65 mass% of the component (A-2). When the content of the component (A-1) is greater than or equal to the lower limit of the above range, a composition having good handling and processing ability is obtained. On the other hand, when the composition is less than or equal to the upper limit of the above range, a hardened product having good flexibility is obtained.

就組分(B)而言之有機聚矽氧烷為用於本發明組合物之交聯劑。雖然對組分(B)之分子結構沒有限制，但組分(B)之分子結構為例如直鏈、部分分支化之直鏈、分支鏈狀、環狀、及樹突結構。組分(B)之分子結構較佳為直鏈、部分分支化之直鏈、或樹突結構。對組分(B)中矽鍵結氫原子之鍵結位置無特定限制。例如，組分(B)中之該等矽鍵結氫原子可與分子鏈中矽原子鍵結，或可與分子鏈末端矽原子鍵結，或可與此兩種位置處之矽原子鍵結。組分(B)中之除了氫原子之外之各矽鍵結基團獨立地為選自烷基(諸如甲基、乙基、丙基、環戊基、環己基、或類似)之基團，及較佳為甲基。 The organopolyoxane for the component (B) is a crosslinking agent for use in the composition of the present invention. Although the molecular structure of the component (B) is not limited, the molecular structure of the component (B) is, for example, a linear, partially branched linear, branched chain, cyclic, and dendritic structure. The molecular structure of component (B) is preferably a linear, partially branched linear, or dendritic structure. There is no particular limitation on the bonding position of the hydrazine-bonded hydrogen atom in the component (B). For example, the 矽-bonded hydrogen atoms in the component (B) may be bonded to a ruthenium atom in the molecular chain, or may be bonded to a ruthenium atom at the end of the molecular chain, or may be bonded to a ruthenium atom at the two positions. . Each of the oxime-bonding groups other than the hydrogen atom in the component (B) is independently a group selected from an alkyl group such as a methyl group, an ethyl group, a propyl group, a cyclopentyl group, a cyclohexyl group or the like. And preferably a methyl group.

雖然對組分(B)之黏度沒有限制，但組分(B)在25℃時之黏度較佳在1至10,000mm2/s範圍內，及尤佳在1至1,000mm2/s範圍內。 Although the viscosity of the component (B) is not limited, the viscosity of the component (B) at 25 ° C is preferably in the range of 1 to 10,000 mm 2 /s, and particularly preferably in the range of 1 to 1,000 mm 2 /s. .

組分(B)較佳具有至少0.7質量%之矽鍵結氫原子。組分(B)尤佳為具有至少0.7質量%之矽鍵結氫原子及由SiO4/2單元及HR3 2SiO1/2單元(於該結構式中，各R3獨立地為選自包含1至10個碳原子之烷基(諸如甲基、乙基、丙基、環戊基、環己基、或類似)之基團，及較佳為甲基)所組成之有機聚矽氧烷，或組分(B)尤佳為具有至少0.7質量%之矽鍵結氫原子之直鏈有機聚矽氧烷，其中除了氫原子之外之各矽鍵結基團獨立地為選自包含1至10個碳原子之烷基之基團。 Component (B) preferably has at least 0.7% by mass of ruthenium-bonded hydrogen atoms. The component (B) is particularly preferably a ruthenium-bonded hydrogen atom having at least 0.7% by mass and a SiO 4/2 unit and an HR 3 2 SiO 1/2 unit (in the formula, each R 3 is independently selected from the group consisting of An organopolyoxyalkylene group comprising a group of an alkyl group of 1 to 10 carbon atoms such as a methyl group, an ethyl group, a propyl group, a cyclopentyl group, a cyclohexyl group or the like, and preferably a methyl group. Or the component (B) is particularly preferably a linear organopolyoxane having at least 0.7% by mass of a hydrazine-bonded hydrogen atom, wherein each of the fluorene-bonding groups other than the hydrogen atom is independently selected from the group consisting of a group of alkyl groups up to 10 carbon atoms.

此類型之組分(B)為例如分子鏈兩端經二甲基氫矽氧基封端之二 甲基矽氧烷-甲基氫矽氧烷共聚物、分子鏈兩端經三甲基矽氧基封端之甲基氫聚矽氧烷、分子鏈兩端經三甲基矽氧基封端之二甲基矽氧烷-甲基氫矽氧烷共聚物、由SiO4/2單元及H(CH3)2SiO1/2單元所組成之有機聚矽氧烷、由SiO4/2單元、H(CH3)2SiO1/2單元、及(CH3)3SiO1/2單元所組成之有機聚矽氧烷、及兩種或更多種該等化合物之混合物。 Component (B) of this type is, for example, a dimethyl methoxy oxane-methylhydroquinoxane copolymer terminated at both ends of the molecular chain via dimethylhydroquinoneoxy, and the ends of the molecular chain are trimethyl hydrazine. Oxy-terminated methylhydrogen polyoxyalkylene, a dimethyl methoxy oxane-methylhydroquinone copolymer terminated by a trimethyl methoxy group at both ends of the molecular chain, and a SiO 4/2 unit An organopolyoxane composed of H(CH 3 ) 2 SiO 1/2 units, consisting of SiO 4/2 units, H(CH 3 ) 2 SiO 1/2 units, and (CH 3 ) 3 SiO 1/2 units An organic polyoxoxane composed of a mixture of two or more of these compounds.

本發明組合物中之組分(B)含量(以組分(A)中每1莫耳總烯基計)係在使得組分(B)中之矽鍵結氫原子在0.5至5莫耳範圍內、及較佳在0.7至2.5莫耳範圍內之範圍內。當在組分(B)含量大於或等於上述範圍下限時，獲得具有較佳可硬化性之組合物。另一方面，當在組分(B)含量小於或等於上述範圍上限時，獲得具有較佳耐熱性之硬化產品。 The component (B) content in the composition of the present invention (per 1 mole of total alkenyl group in the component (A)) is such that the hydrazine-bonded hydrogen atom in the component (B) is 0.5 to 5 moles. Within the range, and preferably within the range of 0.7 to 2.5 moles. When the content of the component (B) is greater than or equal to the lower limit of the above range, a composition having better hardenability is obtained. On the other hand, when the content of the component (B) is less than or equal to the upper limit of the above range, a hardened product having preferable heat resistance is obtained.

組分(C)係用於降低表面黏性及降低自本發明組合物獲得之硬化產品之摩擦係數，及為在分子鏈兩端處具有烯基之直鏈二烷基聚矽氧烷。組分(C)具有由重複二有機矽氧烷單元(D單元)(通常約2至20個單元，較佳約4至18個單元，及更佳約6至11個單元)所組成之直鏈結構。組分(C)在25℃時之黏度在2至10mm2/s範圍內，及較佳在3至8mm2/s範圍內。上述烯基較佳為包含2至10個碳原子之烯基，及尤佳為乙烯基。 Component (C) is used to lower the surface tackiness and reduce the coefficient of friction of the hardened product obtained from the composition of the present invention, and is a linear dialkyl polyoxyalkylene having an alkenyl group at both ends of the molecular chain. Component (C) has a straight consisting of repeating diorganooxane units (D units) (typically from about 2 to 20 units, preferably from about 4 to 18 units, and more preferably from about 6 to 11 units) Chain structure. The viscosity of component (C) at 25 ° C is in the range of 2 to 10 mm 2 /s, and preferably in the range of 3 to 8 mm 2 /s. The above alkenyl group is preferably an alkenyl group having 2 to 10 carbon atoms, and particularly preferably a vinyl group.

於本發明組合物中，組分(C)相對100質量份組分(A)之含量在0.5至12質量份範圍內，及較佳在0.5至10質量份範圍內。當在組分(C)含量大於或等於上述範圍下限時，獲得具有低表面黏性之硬化產品。另一方面，假若組分(C)含量小於或等於上述範圍上限，則可抗組分(C)自硬化產品中溢出。 In the composition of the present invention, the component (C) is contained in an amount of from 0.5 to 12 parts by mass, and preferably from 0.5 to 10 parts by mass, per 100 parts by mass of the component (A). When the content of the component (C) is greater than or equal to the lower limit of the above range, a hardened product having a low surface viscosity is obtained. On the other hand, if the component (C) content is less than or equal to the upper limit of the above range, the component (C) can be prevented from overflowing from the hardened product.

就組分(D)而言之矽氫化反應觸媒為用於加速本發明組合物之硬化之觸媒，及實例包括鉑基觸媒、銠基觸媒、及鈀基觸媒。其中鉑基觸媒為較佳。該鉑基觸媒為鉑基化合物，例如，鉑微細粉末、鉑黑、鉑支撐二氧化矽微細粉末、鉑支撐活性碳、氯鉑酸、氯鉑酸醇溶液、 鉑之烯烴錯合物、鉑之烯基矽氧烷錯合物、或類似。 The hydrogenation reaction catalyst for the component (D) is a catalyst for accelerating the hardening of the composition of the present invention, and examples include a platinum-based catalyst, a rhodium-based catalyst, and a palladium-based catalyst. Among them, a platinum-based catalyst is preferred. The platinum-based catalyst is a platinum-based compound, for example, a platinum fine powder, platinum black, a platinum-supported ceria fine powder, a platinum-supported activated carbon, a chloroplatinic acid, a chloroplatinic acid alcohol solution, A platinum olefin complex, a platinum alkenyl alkane complex, or the like.

本發明組合物中之組分(D)含量為催化量。對組分(D)含量無特定限制，只要該含量可硬化本發明組合物即可。明確言之，本發明組合物中之組分(D)含量較佳在基於此觸媒中之金屬原子之0.01至1,000ppm(以質量計)範圍內。當在組分(D)含量大於或等於前述範圍下限時，獲得具有足夠可硬化性之組合物。另一方面，當在該含量小於或等於上述範圍上限時，基本不必顧慮所獲得硬化產品之著色。 The component (D) content in the composition of the present invention is a catalytic amount. The content of the component (D) is not particularly limited as long as the content can harden the composition of the present invention. Specifically, the component (D) content in the composition of the present invention is preferably in the range of 0.01 to 1,000 ppm by mass based on the metal atom in the catalyst. When the content of the component (D) is greater than or equal to the lower limit of the aforementioned range, a composition having sufficient hardenability is obtained. On the other hand, when the content is less than or equal to the upper limit of the above range, there is substantially no concern about the coloration of the hardened product obtained.

除了組分(A)至(D)外，還可適宜地添加其他所需組分至本發明組合物。反應阻滯劑可作為此種所需組分添加以調整本發明組合物之硬化速度。該反應阻滯劑之實例為炔醇，諸如2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇、1-乙炔基環己-1-醇、2-苯基-3-丁炔-2-醇、或類似；烯炔化合物，諸如3-甲基-3-戊烯-1-炔、3,5-二甲基-3-己烯-1-炔、或類似；1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、1,3,5,7-四甲基-1,3,5,7-四己烯基環四矽氧烷、苯并三唑、或類似。對本發明組合物中該反應阻滯劑之含量沒有限制，及該反應阻滯劑可適當地根據模製方法及硬化條件來選擇。一般而言，本發明組合物中該反應阻滯劑之含量較佳在10至5,000ppm(以質量計)範圍內。 In addition to the components (A) to (D), other desired components may be suitably added to the composition of the present invention. A reaction retarder can be added as such a desired component to adjust the rate of hardening of the composition of the present invention. Examples of such reaction blockers are acetylenic alcohols such as 2-methyl-3-butyn-2-ol, 3,5-dimethyl-1-hexyn-3-ol, 1-ethynylcyclohexane- 1-alcohol, 2-phenyl-3-butyn-2-ol, or the like; an enyne compound such as 3-methyl-3-penten-1-yne, 3,5-dimethyl-3- Hexene-1-yne, or the like; 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane, 1,3,5,7-tetramethyl -1,3,5,7-tetrahexenylcyclotetraoxane, benzotriazole, or the like. The content of the reaction retarder in the composition of the present invention is not limited, and the reaction retarder can be appropriately selected depending on the molding method and the hardening conditions. In general, the amount of the reaction retarder in the composition of the present invention is preferably in the range of 10 to 5,000 ppm by mass.

只要不影響本發明之目標，則可在本發明組合物中摻合其他組分，例如，黏著促進劑、阻燃劑、無機填料、抗靜電劑、或類似。 Other components such as an adhesion promoter, a flame retardant, an inorganic filler, an antistatic agent, or the like may be blended in the composition of the present invention as long as it does not affect the object of the present invention.

雖然對本發明組合物在25℃時之黏度無特定限制，但從處理及可加工性(亦即，造膜性、澆注特性、脫氣之容易度、或類似)觀點言之，黏度較佳在100至10,000mPa．s範圍內，及尤佳在1,000至7,000mPa．s範圍內。 Although the viscosity of the composition of the present invention at 25 ° C is not particularly limited, from the viewpoints of handling and workability (that is, film forming property, casting property, ease of degassing, or the like), the viscosity is preferably 100 to 10,000 mPa. Within the range of s, and especially preferably between 1,000 and 7,000 mPa. Within the scope of s.

此外，可藉由加熱本發明組合物至100至250℃之溫度以形成硬化產品。雖然對該硬化產品之硬度沒有限制，但在依照JIS K 6253測量之情況中，如JIS K 6253中所規定的A型硬度計硬度較佳係大於或 等於60且小於或等於95，及更佳係大於或等於65且小於或等於95。 Further, the hardened product can be formed by heating the composition of the present invention to a temperature of from 100 to 250 °C. Although there is no limitation on the hardness of the hardened product, in the case of measurement according to JIS K 6253, the hardness of the type A durometer as specified in JIS K 6253 is preferably greater than or It is equal to 60 and less than or equal to 95, and more preferably greater than or equal to 65 and less than or equal to 95.

接著將詳細說明用於製造半導體裝置之方法及本發明之半導體裝置。 Next, a method for manufacturing a semiconductor device and a semiconductor device of the present invention will be described in detail.

用於製造本發明半導體裝置之方法的特徵在於包括藉由上述可硬化性聚矽氧組合物密封半導體元件之步驟。特定言之，半導體裝置之密封較佳係藉由上述可硬化性聚矽氧組合物利用壓縮模製來進行。用於密封半導體裝置之此類型方法為例如以下步驟：(i)將發光元件或光接收元件安裝於支撐本體上；(ii)將經成形為與模具中之空腔相同形狀之離型膜附著至該模具，該離型膜具有相對上述元件定位之空腔；(iii)將可硬化性聚矽氧組合物澆注至上述離型膜上；及(iv)此後，在將該支撐本體對抗上述模具壓縮之狀態中模製上述組合物，以獲得經硬化產品密封之半導體裝置。 The method for fabricating the semiconductor device of the present invention is characterized by comprising the step of sealing the semiconductor element by the above-mentioned curable polyoxynitride composition. In particular, the sealing of the semiconductor device is preferably carried out by compression molding using the above-mentioned curable polyoxyn composition. This type of method for sealing a semiconductor device is, for example, the following steps: (i) mounting a light-emitting element or a light-receiving element on a support body; (ii) attaching a release film shaped to have the same shape as a cavity in the mold To the mold, the release film has a cavity positioned relative to the component; (iii) casting a hardenable polyoxyl composition onto the release film; and (iv) thereafter, the support body is confronted The above composition is molded in a state in which the mold is compressed to obtain a semiconductor device sealed by a hardened product.

根據本發明之該方法，安裝在該支撐本體上之該等發光元件或光接收元件係使用可硬化性聚矽氧組合物密封，及使用能夠賦予該硬化產品所需形狀的模製機器。然而，就此類型模製機器而言，可使用任何常用模製機器。此模製機器較佳具有吸氣機制以便將離型膜附著至該模製機器之模具的空腔。此吸氣機制係用於在可硬化性聚矽氧組合物之硬化及模製期間致使上述離型膜附接至該模具之該空腔。於該組合物之硬化及模製之後，該吸氣機制藉由饋入空氣操作以促進該離型膜自該模具脫模及使得所模製產品可輕易自該模具移除。 According to the method of the present invention, the light-emitting elements or light-receiving elements mounted on the support body are sealed using a hardenable polyoxymethylene composition, and a molding machine capable of imparting a desired shape to the hardened product is used. However, for this type of molding machine, any conventional molding machine can be used. The molding machine preferably has a suction mechanism to attach the release film to the cavity of the mold of the molding machine. This gettering mechanism is used to cause the release film to be attached to the cavity of the mold during hardening and molding of the hardenable polyoxyn composition. After hardening and molding of the composition, the gettering mechanism is operated by feed air to promote release of the release film from the mold and to allow the molded product to be easily removed from the mold.

將使用圖式來說明本發明方法。圖1為顯示在藉由使用聚矽氧組合物之硬化產品進行密封之前之半導體裝置之局部截面圖(圖1右端往右部分已省略，與下文所述圖類似)。於圖1中，LED晶片2係藉由衝模結合黏著劑或類似被安裝於支撐本體上。在此支撐本體1之表面上形成之外部引線或電路(兩者咸未加以說明)係藉由結合導線3電連接 至上述LED晶片2。 The drawings will be used to illustrate the method of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a partial cross-sectional view showing a semiconductor device before sealing by using a hardened product of a polyoxymethylene composition (the right end portion of Figure 1 has been omitted, similar to the one described below). In Fig. 1, the LED chip 2 is mounted on the support body by a die bonding adhesive or the like. External leads or circuits formed on the surface of the support body 1 (both undescribed) are electrically connected by bonding wires 3. To the above LED chip 2.

圖2為顯示在使用可硬化性聚矽氧組合物進行填充之前之狀態的局部截面圖。帶有該等LED晶片2之該支撐本體1配置成相對模具4之空腔之位置。此後，於該支撐本體1與該模具4之間饋入離型膜5，及該離型膜係藉由配置在該模具4中之吸氣機制(未加以說明)附著至該模具之該等空腔。圖3為將可硬化性聚矽氧組合物6饋入經該離型膜5覆蓋之該模具4不久後狀態的局部截面圖。 Fig. 2 is a partial cross-sectional view showing a state before filling with a hardenable polyoxymethylene composition. The support body 1 with the LED chips 2 is arranged to be positioned relative to the cavity of the mold 4. Thereafter, a release film 5 is fed between the support body 1 and the mold 4, and the release film is attached to the mold by an air suction mechanism (not illustrated) disposed in the mold 4. Cavity. 3 is a partial cross-sectional view showing a state in which the hardenable polyoxyxide composition 6 is fed into the mold 4 covered by the release film 5 shortly.

圖4為顯示在可硬化性聚矽氧組合物之模製及硬化期間之狀態的局部截面圖。藉由相對模具4壓製支撐本體1，離型膜5夾層在該支撐本體1與該模具4之間，經聚矽氧組合物密封之區域的周邊部分可靠地密封，及可防止上述組合物之洩露。 Fig. 4 is a partial cross-sectional view showing a state during molding and hardening of the hardenable polyoxyn composition. By pressing the support body 1 against the mold 4, the release film 5 is sandwiched between the support body 1 and the mold 4, the peripheral portion of the region sealed by the polyoxymethylene composition is reliably sealed, and the composition can be prevented. Give way.

此類型離型膜5可藉由吸氣或類似輕易地附著至模具，及該離型膜具有針對於可硬化性聚矽氧組合物之硬化溫度之耐熱性。此類型離型膜為例如氟樹脂薄膜，諸如聚四氟三伸乙基樹脂(PTFE)薄膜、乙烯-四氟乙烯共聚物樹脂(ETFE)薄膜、四氟三伸乙基-全氟丙烯共聚物樹脂(FEP)薄膜、聚偏二氟乙烯樹脂(PVDF)薄膜、或類似；聚酯樹脂薄膜，諸如聚對苯二甲酸乙二酯樹脂(PET)薄膜或類似；及非含氟聚烯烴樹脂薄膜，諸如聚丙烯樹脂(PP)薄膜、環烯烴共聚物樹脂(COC)薄膜、或類似。雖然對此類型離型膜之厚度無特定限制，但該離型膜之厚度較佳為約0.01mm至0.2mm。 This type of release film 5 can be easily attached to the mold by suction or the like, and the release film has heat resistance against the hardening temperature of the hardenable polyoxynitride composition. This type of release film is, for example, a fluororesin film such as a polytetrafluoroethylene resin (PTFE) film, an ethylene-tetrafluoroethylene copolymer resin (ETFE) film, or a tetrafluorotriethyl-perfluoropropene copolymer. Resin (FEP) film, polyvinylidene fluoride resin (PVDF) film, or the like; polyester resin film such as polyethylene terephthalate resin (PET) film or the like; and non-fluorinated polyolefin resin film For example, a polypropylene resin (PP) film, a cycloolefin copolymer resin (COC) film, or the like. Although the thickness of the release film of this type is not particularly limited, the thickness of the release film is preferably from about 0.01 mm to 0.2 mm.

可利用能夠使該組合物硬化之任何硬化條件作為該可硬化性聚矽氧組合物之硬化條件。在無特定限制下，該等硬化條件為例如較佳50至200℃、及尤佳100至150℃之溫度，持續較佳約0.5至60分鐘、及尤佳約1至30分鐘之時段。在需要時，可在150至200℃之溫度下進行二次硬化(後硬化)約0.5至4小時。 Any hardening condition capable of hardening the composition can be utilized as the hardening condition of the curable polyxanthene composition. The hardening conditions are, for example, preferably from 50 to 200 ° C, and particularly preferably from 100 to 150 ° C, and preferably from about 0.5 to 60 minutes, and particularly preferably from about 1 to 30 minutes, without any particular limitation. When necessary, secondary hardening (post hardening) may be carried out at a temperature of from 150 to 200 ° C for about 0.5 to 4 hours.

圖6為顯示與由聚矽氧製成之凸透鏡整合之本發明光學裝置的局 部截面圖。於圖6中，多個LED晶片安裝在單一支撐本體板上。然而，個別半導體裝置可藉由利用刀片切割、雷射切割、或類似切割該支撐本體製得。 Figure 6 is a view showing the optical device of the present invention integrated with a convex lens made of polyfluorene oxide Sectional view. In Figure 6, a plurality of LED chips are mounted on a single support body plate. However, individual semiconductor devices can be obtained by using blade cutting, laser cutting, or the like to cut the support system.

實例 Instance

將利用實例及對照例更詳細地說明本發明之可硬化性聚矽氧組合物、用於製造半導體裝置之方法、及半導體裝置。請注意實例中之黏度為在25℃時的值。就本說明書中之術語「黏度」而言，基於JIS Z 8803，利用毛細管黏度計測量運動黏度(mm2/s單位)。另一方面，黏度(mPa．s單位)為利用旋轉黏度計測得之值。此外，依如下測定硬化產品之性質。 The curable polysulfonium composition of the present invention, a method for producing a semiconductor device, and a semiconductor device will be described in more detail by way of examples and comparative examples. Please note that the viscosity in the example is the value at 25 °C. For the term "viscosity" in this specification, the kinematic viscosity (mm 2 /s unit) is measured using a capillary viscometer based on JIS Z 8803. On the other hand, the viscosity (mPa.s unit) is a value measured by a rotational viscometer. Further, the properties of the hardened product were determined as follows.

[硬化產品之硬度] [hardness of hardened product]

於150℃下加熱可硬化性聚矽氧組合物1小時以製備硬化產品。利用JIS K 6253中所指明之A型硬度計測量該硬化產品之硬度。 The hardenable polyoxyl composition was heated at 150 ° C for 1 hour to prepare a hardened product. The hardness of the hardened product was measured using a type A durometer specified in JIS K 6253.

[硬化產品之動態摩擦係數] [Dynamic coefficient of friction of hardened products]

藉由於150℃下加熱可硬化性聚矽氧組合物1小時製得1mm厚片狀硬化產品。使該片狀硬化產品固定於TRIBOGEAR型14DR表面測量儀器(由Shinto Scientific Co.,Ltd.製造)中。在利用球形壓頭施加200g負載時，使該球形壓頭沿水平方向以2,000mm/分鐘速度滑動，及測得動態摩擦係數(μk)。 A 1 mm thick sheet-like hardened product was obtained by heating the curable polysiloxane composition at 150 ° C for 1 hour. The sheet-like hardened product was fixed in a TRIBOGEAR type 14DR surface measuring instrument (manufactured by Shinto Scientific Co., Ltd.). When a load of 200 g was applied by a spherical indenter, the spherical indenter was slid at a speed of 2,000 mm/min in the horizontal direction, and a dynamic friction coefficient (μk) was measured.

[硬化產品之所附著灰塵量] [Amount of dust attached to the hardened product]

於150℃下加熱可硬化性聚矽氧組合物1小時以製得塊狀5mm方形硬化產品。使Dyneon(註冊商標)TF微細粉末TF9205(8μm平均粒徑，由Sumitomo 3M Ltd.製造)附著至該塊狀硬化產品。鼓吹空氣用於自粉末附著樣本吹拂除去過量粉末，及測定所附著粉末的殘留量以確定所附著粉末的量。 The hardenable polyoxyxide composition was heated at 150 ° C for 1 hour to obtain a bulk 5 mm square hardened product. Dyneon (registered trademark) TF fine powder TF9205 (8 μm average particle diameter, manufactured by Sumitomo 3M Ltd.) was attached to the lump hardened product. Air is blown for blowing excess powder from the powder-attached sample, and the residual amount of the adhered powder is determined to determine the amount of the adhered powder.

此外，以下述方法製造半導體裝置。 Further, a semiconductor device was fabricated in the following manner.

[用於製造半導體裝置之方法(1)] [Method for manufacturing a semiconductor device (1)]

可硬化性聚矽氧組合物係依壓縮模製法用於密封半導體元件。換言之，準備壓縮模製設備，及將所附接的上模及下模加熱至130℃。使用其外部雕刻為圓頂形狀之衝模作為下模。使其上安裝LED晶片之基板固定於該上模中以致該LED晶片面朝下。使乙烯-四氟乙烯共聚物樹脂(ETFE)離型膜(AFLEX 50LM)固定於該下模上，及利用吸氣將該離型膜附著至該下模。在將該可硬化性聚矽氧組合物澆注於該離型膜上之後，將該上模及該下模放置在一起，及藉由在130℃下施加3MPa負載加壓模製該聚矽氧組合物3分鐘。此後，自該模具移除經聚矽氧樹脂密封之基板，及於150℃下加熱總成1小時以使該可硬化性聚矽氧組合物硬化。將Dyneon(註冊商標)TF微細粉末TF9205(8μm平均粒徑，由Sumitomo 3M Ltd.製造)噴撒在所獲得的硬化產品上。此後，鼓吹空氣用於吹拂除去過量的附著至上述硬化產品之粉末，及目測觀察殘留粉末之黏著狀態。觀察到所附著粉末表示為「×」，及未觀察到所附著粉末表示為「○」。 The hardenable polyoxygen composition is used for sealing a semiconductor element by a compression molding method. In other words, the compression molding apparatus was prepared, and the attached upper and lower molds were heated to 130 °C. A die which is externally engraved into a dome shape is used as the lower die. The substrate on which the LED chip is mounted is fixed in the upper mold such that the LED chip faces downward. An ethylene-tetrafluoroethylene copolymer resin (ETFE) release film (AFLEX 50LM) was fixed to the lower mold, and the release film was attached to the lower mold by suction. After casting the hardenable polyoxyl composition onto the release film, the upper mold and the lower mold are placed together, and the polyfluorene is molded by applying a pressure of 3 MPa at 130 ° C. The composition was for 3 minutes. Thereafter, the polycarbonate-sealed substrate was removed from the mold, and the assembly was heated at 150 ° C for 1 hour to harden the hardenable polyoxyn composition. Dyneon (registered trademark) TF fine powder TF9205 (8 μm average particle diameter, manufactured by Sumitomo 3M Ltd.) was sprayed on the obtained hardened product. Thereafter, air was blown for blowing to remove excess powder adhering to the hardened product, and the adhesion state of the residual powder was visually observed. It was observed that the adhered powder was expressed as "x", and it was not observed that the adhered powder was expressed as "○".

[用於製造半導體裝置之方法(2)] [Method for manufacturing a semiconductor device (2)]

可硬化性聚矽氧組合物係利用壓縮模製法用於密封半導體元件。換言之，準備壓縮模製設備，及將所附接的上模及下模加熱至130℃。就該下模而言，利用呈10行及10列形式排列的100個圓頂狀模製品之模具。帶有呈10列及10行形式配置之LED以致各圓頂將可密封LED晶片之基板係相對該上模固定，以致該等LED晶片面朝下。使乙烯-四氟乙烯共聚物樹脂(ETFE)離型膜(AFLEX 50LM)固定在該下模上方，及吸氣係用於將該離型膜吸引及附著至該下模。在將該可硬化性聚矽氧組合物澆注於該離型膜之後，該上模及下模擬合在一起，及其中該基板處於夾層狀態，於130℃下利用3MPa負載壓縮模製該聚矽氧組合物3分鐘。此後，自該模具移除經聚矽氧樹脂密封之基板，及 在烘箱中於150℃下加熱處理該基板1小時。獲得經實例1及對照例1之可硬化性聚矽氧組合物密封之半導體裝置，其具有平坦部件及其上之圓頂形狀。將Dyneon(註冊商標)TF微細粉末TF9205(8μm平均粒徑，由Sumitomo 3M Ltd.製造)噴撒在所獲得之硬化產品上。此後，藉由鼓風吹拂除去過量的附著至聚矽氧硬化產品之粉末，及藉由光學顯微鏡觀察殘留粉末之黏著狀態。觀察到所附著粉末表示為「×」，而假若未觀察到所附著粉末，則此種情況表示為「○」。 The hardenable polyoxymethylene composition is used for sealing a semiconductor element by a compression molding method. In other words, the compression molding apparatus was prepared, and the attached upper and lower molds were heated to 130 °C. For the lower mold, a mold of 100 dome-shaped molded articles arranged in 10 rows and 10 columns was used. The LEDs are arranged in the form of 10 columns and 10 rows such that the domes secure the substrate of the sealable LED wafer relative to the upper die such that the LED chips face down. An ethylene-tetrafluoroethylene copolymer resin (ETFE) release film (AFLEX 50LM) was fixed over the lower mold, and an air suction system was used to attract and adhere the release film to the lower mold. After casting the curable polyoxynoxy composition onto the release film, the upper mold and the lower mold are combined, and the substrate is in a sandwich state, and the polyfluorene is compression molded at 130 ° C with a load of 3 MPa. Oxygen composition for 3 minutes. Thereafter, the polycarbonate-sealed substrate is removed from the mold, and The substrate was heat treated in an oven at 150 ° C for 1 hour. A semiconductor device sealed with the hardenable polyoxyxide composition of Example 1 and Comparative Example 1 having a flat member and a dome shape thereon was obtained. Dyneon (registered trademark) TF fine powder TF9205 (8 μm average particle diameter, manufactured by Sumitomo 3M Ltd.) was sprayed on the obtained hardened product. Thereafter, excess powder adhering to the polyoxygenated hardened product was removed by blast blowing, and the adhesion state of the residual powder was observed by an optical microscope. It was observed that the adhered powder was expressed as "x", and if no attached powder was observed, this case was expressed as "○".

[用於製造半導體裝置之方法(3)] [Method for manufacturing a semiconductor device (3)]

藉由利用由Disco Corp.製造之DAD 651切割裝置及由Disco Corp.製造之刀片(B1A862SS)依3mm/秒之饋入速度切割經利用上述用於製造半導體裝置之方法(2)密封之LED裝置樹脂之平坦部件，藉此製得個別半導體裝置。此後，利用旋轉洗滌設備洗滌該等裝置及乾燥。藉由光學顯微鏡測量該硬化聚矽氧樹脂之密封所得LED裝置之表面。觀察到切屑附著表示為「×」，而假若未觀察到切屑，則此種情況表示為「○」。 The LED device sealed by the above method (2) for manufacturing a semiconductor device was cut by using a DAD 651 cutting device manufactured by Disco Corp. and a blade (B1A862SS) manufactured by Disco Corp. at a feed rate of 3 mm/sec. A flat member of the resin, whereby individual semiconductor devices are fabricated. Thereafter, the devices are washed and dried using a rotary washing apparatus. The surface of the LED device obtained by sealing the hardened polyoxyl resin was measured by an optical microscope. It was observed that the chip adhesion was expressed as "x", and if no chip was observed, this case was indicated as "○".

[實例1及2及對照例1至8] [Examples 1 and 2 and Comparative Examples 1 to 8]

藉以標示於表1中之混合量均勻地混合以下組分製備可硬化性聚矽氧組合物。製得該等可硬化性聚矽氧組合物之硬化產品及以上述方式進行評估。此外，該等可硬化性聚矽氧組合物係依上述方法(1)至(3)用於製造半導體裝置。該等結果顯示於表1中。 The hardenable polyoxymethylene composition was prepared by uniformly mixing the following components in the amounts indicated in Table 1. The hardened products of the hardenable polyoxyl composition were prepared and evaluated in the manner described above. Further, the curable polyoxynoxy compositions are used in the manufacture of a semiconductor device according to the above methods (1) to (3). These results are shown in Table 1.

組分(A-1-1)：分子兩端具有二甲基乙烯基矽氧基封端及具有360mPa．s黏度之二甲基聚矽氧烷(乙烯基含量=0.44質量%) Component (A-1-1): has a dimethylvinyloxy group at both ends of the molecule and has 360 mPa. s viscosity of dimethyl polyoxane (vinyl content = 0.44% by mass)

組分(A-1-2)：分子兩端具有二甲基乙烯基矽氧基封端及具有11,000mPa．s黏度之二甲基聚矽氧烷(乙烯基含量=0.14質量%) Component (A-1-2): dimethyl vinyl oxy-oxy end capped at both ends of the molecule and having 11,000 mPa. s viscosity of dimethyl polyoxane (vinyl content = 0.14% by mass)

組分(A-1-3)：分子兩端具有二甲基乙烯基矽氧基封端及具有65mPa．s黏度之二甲基聚矽氧烷(乙烯基含量=1.5質量%) Component (A-1-3): has a dimethylvinyloxy group at both ends of the molecule and has a 65 mPa. s viscosity of dimethyl polyoxane (vinyl content = 1.5% by mass)

組分(A-2-1)：具有約5,500之質量平均分子量及由以下平均單元 式表示之有機聚矽氧烷樹脂(乙烯基含量=3.4質量%)。 Component (A-2-1): having a mass average molecular weight of about 5,500 and consisting of the following average units An organic polydecane resin represented by the formula (vinyl content = 3.4% by mass).

[(CH3)2CH2=CHSiO1/2]0.13[(CH3)3SiO1/2]0.45(SiO4/2)0.42 [(CH 3 ) 2 CH 2 =CHSiO 1/2 ] 0.13 [(CH 3 ) 3 SiO 1/2 ] 0.45 (SiO 4/2 ) 0.42

組分(A-2-2)：具有約20,000之質量平均分子量及由以下平均單元式表示之有機聚矽氧烷(乙烯基含量=4.2質量%)。 Component (A-2-2): an organic polysiloxane having a mass average molecular weight of about 20,000 and an average unit formula (vinyl content = 4.2% by mass).

[(CH3)2CH2=CHSiO1/2]0.15[(CH3)3SiO1/2]0.38(SiO4/2)0.47 [(CH 3 ) 2 CH 2 =CHSiO 1/2 ] 0.15 [(CH 3 ) 3 SiO 1/2 ] 0.38 (SiO 4/2 ) 0.47

組分(B-1)：具有18mm2/s之動態黏度及由以下平均單元式表示之有機聚矽氧烷(矽鍵結氫原子含量=約0.97質量%)。 Component (B-1): has a dynamic viscosity of 18 mm 2 /s and an organic polyoxyalkylene represented by the following average unit formula (矽-bonded hydrogen atom content = about 0.97 mass%).

[H(CH3)2SiO1/2]8(SiO4/2)4 [H(CH 3 ) 2 SiO 1/2 ] 8 (SiO 4/2 ) 4

組分(B-2)：分子兩端具有三甲基矽氧基封端及具有5mm2/s之運動黏度之甲基氫矽氧烷共聚物(矽鍵結氫原子含量：約1.4質量%) Component (B-2): a methylhydroquinone copolymer having a trimethylphosphonium end group at both ends of the molecule and a kinematic viscosity of 5 mm 2 /s (矽 bond hydrogen atom content: about 1.4% by mass) )

組分(B-3)：分子兩端具有三甲基矽氧基封端及具有21mm2/s之運動黏度之聚甲基氫矽氧烷(矽鍵結氫原子含量=約1.57質量%)。 Component (B-3): polymethylhydroquinone having a trimethylphosphonium end group at both ends of the molecule and having a kinematic viscosity of 21 mm 2 /s (矽 bond hydrogen atom content = about 1.57 mass%) .

組分(B-4)：具有1mm2/s之運動黏度及由以下平均組成式表示之甲基氫環矽氧烷(矽鍵結氫原子含量=約1.66質量%)。 Component (B-4): has a kinematic viscosity of 1 mm 2 /s and a methylhydrocyclodecane represented by the following average composition formula (矽-bonded hydrogen atom content = about 1.66 mass%).

[H(CH3)SiO]4.9 [H(CH 3 )SiO] 4.9

組分(C-1)：分子兩端經二甲基乙烯基矽氧基封端及具有5mm2/s之運動黏度之二甲基矽氧烷聚合物(乙烯基含量=約7.7質量%)。 Component (C-1): a dimethyloxane polymer terminated at both ends of the molecule via dimethylvinyloxyl group and having a kinematic viscosity of 5 mm 2 /s (vinyl content = about 7.7% by mass) .

組分(C-2)：具有3.1mm2/s之運動黏度及由以下平均組成式表示之甲基乙烯基環矽氧烷。 Component (C-2): has a kinematic viscosity of 3.1 mm 2 /s and a methylvinylcyclodecane represented by the following average composition formula.

[(CH3)CH2=CHSiO]4 [(CH 3 )CH 2 =CHSiO] 4

組分(C-3)：具有2mm2/s之運動黏度之1,3-二乙烯基四甲基二矽氧烷。 Component (C-3): 1,3-divinyltetramethyldioxane having a kinematic viscosity of 2 mm 2 /s.

組分(C-4)：具有0.65mm2/s之運動黏度之六甲基二矽氧烷。 Component (C-4): hexamethyldioxane having a kinematic viscosity of 0.65 mm 2 /s.

組分(D-1)：鉑之1,3-二乙烯基四甲基二矽氧烷錯合物之1,3-二乙烯基四甲基二矽氧烷溶液(鉑金屬含量=約4,000ppm)。 Component (D-1): Platinum 1,3-divinyltetramethyldioxane complex 1,3-divinyltetramethyldioxane solution (platinum metal content = about 4,000 Ppm).

組分(E-1)；1-乙炔基環己-1-醇 Component (E-1); 1-ethynylcyclohexan-1-ol

工業適用範圍Industrial scope

本發明之可硬化性聚矽氧組合物可形成具有低表面黏性及具有低摩擦係數之硬化產品。因此，該可硬化性聚矽氧組合物適用作為用 於半導體元件(諸如發光二極體(LED)、半導體雷射、光電二極體、光電晶體、固態成像元件、用於光耦合劑之發光元件及光接收元件、或類似)之密封劑。 The hardenable polyoxyxene composition of the present invention can form a hardened product having low surface tack and having a low coefficient of friction. Therefore, the curable polydecaneoxy composition is suitable for use as A sealing agent for a semiconductor element such as a light emitting diode (LED), a semiconductor laser, a photodiode, a photoelectric crystal, a solid state imaging element, a light emitting element for a photocoupler, and a light receiving element, or the like.

Claims (7)

一種可硬化性聚矽氧組合物，其包含：(A)100質量份有機聚矽氧烷，其由以下所組成：(A-1)30至70質量%之直鏈有機聚矽氧烷，其在25℃時具有10至100,000mPa．s之黏度，其每分子中具有至少兩個矽鍵結烯基，及除了烯基之外之各矽鍵結基團獨立地選自包含1至10個碳原子之烷基，及(A-2)70至30質量%之類樹脂有機聚矽氧烷，其具有1.5至5.0質量%之烯基，及包含SiO4/2單元、R1 2R2SiO1/2單元、及R1 3SiO1/2單元，其中各R1獨立地為選自包含1至10個碳原子之烷基之基團，及R2為烯基；(B)有機聚矽氧烷，其每分子中具有至少兩個矽鍵結氫原子，及除了氫原子之外之各矽鍵結基團獨立地選自包含1至10個碳原子之烷基，其量使得含於組分(B)中之矽鍵結氫原子含量相對1莫耳含於組分(A)中之總烯基係在0.5至5莫耳範圍內；(C)0.5至12質量份之直鏈二烷基聚矽氧烷，其在25℃時具有2至10mm2/s之黏度及其分子鏈兩端具有烯基封端；及(D)催化量之矽氫化反應觸媒。 A curable polydecaneoxy composition comprising: (A) 100 parts by mass of an organopolyoxane consisting of (A-1) 30 to 70% by mass of a linear organopolyoxane, It has 10 to 100,000 mPa at 25 °C. a viscosity of s having at least two fluorene-bonded alkenyl groups per molecule, and each oxime-bonding group other than an alkenyl group is independently selected from an alkyl group having 1 to 10 carbon atoms, and (A- 2) a resin organic polysiloxane having 70 to 30% by mass, having 1.5 to 5.0% by mass of an alkenyl group, and comprising a SiO 4/2 unit, an R 1 2 R 2 SiO 1/2 unit, and R 1 3 a SiO 1/2 unit, wherein each R 1 is independently a group selected from an alkyl group having 1 to 10 carbon atoms, and R 2 is an alkenyl group; (B) an organopolyoxane having per molecule At least two hydrazine-bonded hydrogen atoms, and each oxime-bonding group other than a hydrogen atom are independently selected from an alkyl group having 1 to 10 carbon atoms in an amount such that it is contained in the component (B) The bond hydrogen atom content is in the range of 0.5 to 5 moles relative to 1 mole of the total alkenyl group contained in the component (A); (C) 0.5 to 12 parts by mass of the linear dialkyl polysiloxane, It has a viscosity of 2 to 10 mm 2 /s at 25 ° C and an alkenyl end cap at both ends of the molecular chain; and (D) a catalytic amount of a hydrogenation reaction catalyst. 如請求項1之可硬化性聚矽氧組合物，其中組分(A-2)為類樹脂有機聚矽氧烷，其每1莫耳SiO4/2單元具有總計0.5至1.4莫耳R1 2R2SiO1/2單元及R1 3SiO1/2單元。 The request entry of a poly silicon oxide curable composition, wherein the component (A-2) is a silicon-based resin organopolysiloxane siloxane which SiO 4/2 units having a total of from 0.5 to 1.4 mole 1 mole each R 1 2 R 2 SiO 1/2 unit and R 1 3 SiO 1/2 unit. 如請求項1或2之可硬化性聚矽氧組合物，其中藉由使該組合物硬化所獲得之硬化產品具有依照JIS K 6253測得之大於或等於60且小於或等於95之A型硬度計硬度。 The hardenable polyoxyl composition of claim 1 or 2, wherein the hardened product obtained by hardening the composition has a type A hardness of 60 or more and less than or equal to 95 as measured according to JIS K 6253 Hardness. 一種用於製造半導體裝置之方法，該方法包括藉由使用如請求 項1至3中任一項所述之可硬化性聚矽氧組合物密封半導體元件之步驟。 A method for fabricating a semiconductor device, the method comprising The step of sealing the semiconductor element with the curable polyxanylene composition according to any one of items 1 to 3. 如請求項4之用於製造半導體裝置之方法，該方法進一步包括以該可硬化性聚矽氧組合物藉由壓縮模製密封半導體元件之步驟。 A method for manufacturing a semiconductor device according to claim 4, the method further comprising the step of sealing the semiconductor element by compression molding with the hardenable polyoxynitride composition. 如請求項4或5之用於製造半導體裝置之方法，該方法進一步包括在以該可硬化性聚矽氧組合物密封該半導體裝置之後藉由刀片切割該半導體裝置以製造個別半導體裝置之步驟。 The method of claim 4 or 5 for fabricating a semiconductor device, the method further comprising the step of fabricating the individual semiconductor device by cutting the semiconductor device with a blade after sealing the semiconductor device with the hardenable polyoxynitride composition. 一種依如請求項4至6中任一項所述之方法所獲得之半導體裝置。 A semiconductor device obtained by the method of any one of claims 4 to 6.
TW102132492A 2012-09-10 2013-09-09 Curable silicone composition, method for producing semiconductor device, and semiconductor device TW201410745A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012198803A JP2014051636A (en) 2012-09-10 2012-09-10 Curable silicone composition, manufacturing method of semiconductor device and semiconductor device

Publications (1)

Publication Number Publication Date
TW201410745A true TW201410745A (en) 2014-03-16

Family

ID=49274842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102132492A TW201410745A (en) 2012-09-10 2013-09-09 Curable silicone composition, method for producing semiconductor device, and semiconductor device

Country Status (8)

Country Link
US (1) US20150235872A1 (en)
EP (1) EP2892946A2 (en)
JP (1) JP2014051636A (en)
KR (1) KR101907378B1 (en)
CN (1) CN104603181A (en)
MY (1) MY180275A (en)
TW (1) TW201410745A (en)
WO (1) WO2014038728A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017147061A1 (en) * 2016-02-23 2017-08-31 Dow Corning Corporation Selective adhesion silicone rubber
US11453149B2 (en) * 2017-08-24 2022-09-27 Dow Silicones Corporation Injection moldable silicone composition
JP6862334B2 (en) 2017-12-05 2021-04-21 信越化学工業株式会社 Curable Silicone Release Agent Composition
WO2020026844A1 (en) * 2018-08-01 2020-02-06 信越化学工業株式会社 Silicone adhesive agent composition, and adhesive tape or adhesive film using same
JP2021001257A (en) * 2019-06-20 2021-01-07 信越化学工業株式会社 Room temperature curable silicone rubber composition
JP7365798B2 (en) * 2019-07-03 2023-10-20 ダウ・東レ株式会社 Silicone gel composition, cured product thereof, electronic component encapsulant, electronic component, and method for protecting semiconductor chips

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4519869B2 (en) * 2007-03-05 2010-08-04 株式会社東芝 Semiconductor device
TWI458780B (en) 2007-07-31 2014-11-01 Dow Corning Toray Co Ltd Curable silicone composition for providing highly transparent cured product
JP5136963B2 (en) * 2008-03-24 2013-02-06 信越化学工業株式会社 Curable silicone rubber composition and semiconductor device
JP5475295B2 (en) 2009-02-02 2014-04-16 東レ・ダウコーニング株式会社 Curable silicone composition giving highly transparent silicone cured product

Also Published As

Publication number Publication date
JP2014051636A (en) 2014-03-20
KR20150054811A (en) 2015-05-20
CN104603181A (en) 2015-05-06
WO2014038728A3 (en) 2014-05-01
KR101907378B1 (en) 2018-10-12
MY180275A (en) 2020-11-26
WO2014038728A2 (en) 2014-03-13
EP2892946A2 (en) 2015-07-15
US20150235872A1 (en) 2015-08-20

Similar Documents

Publication Publication Date Title
US8946353B2 (en) Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
US8772812B2 (en) Curable organopolysiloxane composition and optical semiconductor device
US9012586B2 (en) Curable organopolysiloxane composition and optical semiconductor device
TWI629314B (en) Hot-melt type curable silicone composition for compression molding or laminating
KR101487203B1 (en) Silicone resin composition for encapsulating luminescent element and process for producing optical-semiconductor electronic part with the same through potting
EP2196503B1 (en) Thermosetting silicone resin composition, silicone resin, silicone resin sheet and use thereof
KR101322987B1 (en) Method of Reducing Surface Tackiness of Silicone Rubber Cured Product, Liquid Silicone Rubber Composition for Sealing Semiconductor, Silicone Rubber-Sealed Semiconductor Device, and Method Of Producing Semiconductor Device
TW201410745A (en) Curable silicone composition, method for producing semiconductor device, and semiconductor device
US9048406B2 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
US9403982B2 (en) Curable silicone composition and cured product thereof
WO2009154260A1 (en) Curable organopolysiloxane composition and semiconductor device
US20160240753A1 (en) Film-Like Thermosetting Silicone Sealing Material
WO2014002918A1 (en) Reactive silicone composition, reactive thermoplastic article, cured product, and optical semiconductor device
KR20140130135A (en) Curable silicone composition, cured product thereof, and optical semiconductor device
KR20170016889A (en) Imprinting process of hot-melt type curable silicone composition for optical devices
TWI654255B (en) Heat-curable polysilicon composition, chip soldering material, and optical semiconductor device
US9263648B2 (en) Method of manufacturing an integrated piece comprising a convex cured product and a substrate
TW201318231A (en) Encapsulating sheet and optical semiconductor element device
CN110382625B (en) Curable organopolysiloxane composition and semiconductor device
TWI540761B (en) Silicone resin sheet, cured sheet, and light emitting diode device and producing method thereof