TW201407680A - Blade for etching glass substrate - Google Patents
Blade for etching glass substrate Download PDFInfo
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- TW201407680A TW201407680A TW102118507A TW102118507A TW201407680A TW 201407680 A TW201407680 A TW 201407680A TW 102118507 A TW102118507 A TW 102118507A TW 102118507 A TW102118507 A TW 102118507A TW 201407680 A TW201407680 A TW 201407680A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
本發明是有關使用於顯示面板、太陽能電池等的玻璃基板蝕刻裝置,尤其是有關一種以垂直流式方式進行減薄時使用的蝕刻裝置用刀片結構。 The present invention relates to a glass substrate etching apparatus used for a display panel, a solar cell, or the like, and more particularly to a blade structure for an etching apparatus used for thinning in a vertical flow type.
作為顯示面板等的主要部件中,舉例來說,有以較薄的厚度進行蝕刻(減薄)的玻璃基板。此類薄玻璃基板是將1公釐(mm)以上厚度的玻璃基板通過蝕刻溶液薄薄地進行蝕刻而製成。使用破損率低且較厚的玻璃基板進行幾道工藝之後,將一面蝕刻來進行薄化處理,也可在進行工藝前,將玻璃基板進行雙面蝕刻薄化處理之後再進行工藝。玻璃基板的減薄工藝是通過使用蝕刻溶液的化學性蝕刻進行,減薄方式可使用液浸方式、噴淋方式、垂直流式中的任意一種方式。垂直流式破損率低,具有穩定性,且生產率高。 Among the main components of the display panel and the like, for example, there is a glass substrate which is etched (thinned) with a thin thickness. Such a thin glass substrate is produced by thinly etching a glass substrate having a thickness of 1 mm or more by an etching solution. After performing a few processes using a glass substrate having a low breakage rate and a relatively large thickness, the thinning treatment may be performed by etching one side, or the glass substrate may be subjected to double-side etching and thinning before the process, and then the process may be performed. The thinning process of the glass substrate is performed by chemical etching using an etching solution, and the thinning method may be any one of a liquid immersion method, a shower method, and a vertical flow method. The vertical flow breakage rate is low, stable, and high in productivity.
如圖1(a)和(b)所示,垂直流式是將玻璃基板100放入框架300並用夾具400固定,使蝕刻溶液沿著玻璃基板100的一面或雙面流淌一定時間,並以所需的厚度進行減薄的工藝。此時,使用刀片200,以使蝕刻溶液均勻地流到玻璃基板100的整個表面,由此,通過所述刀片200,蝕刻溶液能夠流向玻璃基板100的整個表面。 As shown in FIGS. 1(a) and (b), in the vertical flow type, the glass substrate 100 is placed in the frame 300 and fixed by the jig 400, so that the etching solution flows along one side or both sides of the glass substrate 100 for a certain period of time. The required thickness is used for the thinning process. At this time, the blade 200 is used to uniformly flow the etching solution to the entire surface of the glass substrate 100, whereby the etching solution can flow to the entire surface of the glass substrate 100 through the blade 200.
但是,如圖2所示,由於蝕刻溶液特有的表面張力及玻璃基板100的黏度,即使使用刀片200,蝕刻溶液也會向內側流進,而發生凝聚 現象,從而導致蝕刻溶液不能均勻分佈於玻璃基板100的整個表面,此為玻璃基板100上產生斑點或厚度整體上不均勻的原因。 However, as shown in FIG. 2, due to the surface tension peculiar to the etching solution and the viscosity of the glass substrate 100, even if the blade 200 is used, the etching solution flows inward and condenses. The phenomenon causes the etching solution to be unevenly distributed over the entire surface of the glass substrate 100, which is a cause of occurrence of spots or thickness unevenness on the glass substrate 100 as a whole.
而且,需要根據蝕刻溶液的流動部分對齊玻璃基板100,比較繁瑣,但與初期對齊不同地,蝕刻溶液的流動仍然由於黏度等原因發生變化,從而導致發生同樣的問題。 Further, it is necessary to align the glass substrate 100 according to the flow portion of the etching solution, which is cumbersome, but unlike the initial alignment, the flow of the etching solution is still changed due to viscosity or the like, resulting in the same problem.
因此,本發明的目的為提供一種可均勻地蝕刻玻璃基板的整個表面的改良結構的新型刀片。 Accordingly, it is an object of the present invention to provide a novel blade having an improved structure that can uniformly etch the entire surface of a glass substrate.
本發明的技術方案在於:根據所述目的,本發明將刀片的端部形成彎曲形狀,使得蝕刻溶液沿著刀片的整個長度以均勻的流量流下。 The technical solution of the present invention resides in that, according to the object, the present invention forms the end portion of the blade into a curved shape such that the etching solution flows down at a uniform flow rate along the entire length of the blade.
即,本發明提供一種玻璃基板蝕刻用刀片,使用於以垂直流式蝕刻玻璃基板的減薄工藝的刀片,其特徵在於:所述刀片的端部形成彎曲形狀,使得蝕刻溶液沿著刀片的整個長度以均勻的流量流下。 That is, the present invention provides a blade for etching a glass substrate, which is used for a blade of a thinning process for vertically etching a glass substrate, characterized in that the end portion of the blade is formed into a curved shape such that the etching solution is along the entire blade The length flows down with a uniform flow rate.
並且,本發明提供一種玻璃基板蝕刻用刀片,其特徵在於:所述刀片端部的彎曲由波紋凹凸、鋸齒凹凸、四角凹凸、菱形凹凸、圓形凹凸形狀中的任意一種形成。 Further, the present invention provides a blade for etching a glass substrate, characterized in that the curvature of the end portion of the blade is formed by any one of a corrugated unevenness, a zigzag unevenness, a quadrangular unevenness, a rhombic unevenness, and a circular uneven shape.
並且,本發明提供一種玻璃基板蝕刻用刀片,其特徵在於:所述凹凸的節距為5至15公釐(mm)。 Further, the present invention provides a blade for etching a glass substrate, characterized in that the pitch of the unevenness is 5 to 15 mm.
並且,本發明提供一種玻璃基板蝕刻用刀片,其特徵在於:所述刀片的厚度為3至7公釐(mm)。 Further, the present invention provides a blade for etching a glass substrate, characterized in that the blade has a thickness of 3 to 7 mm.
並且,本發明提供一種玻璃基板蝕刻用刀片,其特徵在於:所述刀片具有供蝕刻溶液流入的縫隙,並在內部具有空心的空間,並且在彎曲的端部具有孔或裂縫,由此,蝕刻溶液通過刀片的外周面和孔或裂縫 流入。 Further, the present invention provides a blade for etching a glass substrate, characterized in that the blade has a slit into which an etching solution flows, and has a hollow space inside, and has a hole or a crack at a bent end portion, thereby etching The solution passes through the outer surface of the blade and the hole or crack Inflow.
100‧‧‧玻璃基板 100‧‧‧ glass substrate
200‧‧‧刀片 200‧‧‧blade
300‧‧‧框架 300‧‧‧Frame
400‧‧‧夾具 400‧‧‧ fixture
500‧‧‧刀片 500‧‧‧blade
600‧‧‧刀片噴嘴 600‧‧‧blade nozzle
700‧‧‧蝕刻溶液 700‧‧‧etching solution
圖1(a)和(b)分別為顯示一般的垂直流式的玻璃基板的減薄裝置結構的正面圖和側面圖。 1(a) and 1(b) are a front view and a side view, respectively, showing the structure of a thinning device of a general vertical flow type glass substrate.
圖2為顯示根據現有刀片結構發生的蝕刻溶液向內側偏向的現象的正面圖。 Fig. 2 is a front elevational view showing a phenomenon in which an etching solution which is generated according to a conventional blade structure is deflected inward.
圖3(a)~(e)為顯示根據本發明的在端部形成彎曲的刀片之多個實施例的立體圖。 3(a) to (e) are perspective views showing various embodiments of a blade forming a curved portion at an end according to the present invention.
圖4為顯示使用根據本發明的刀片,使蝕刻溶液均勻流過玻璃基板的整個表面進行蝕刻的正面圖。 4 is a front elevational view showing etching using an insert according to the present invention to uniformly flow an etching solution through the entire surface of a glass substrate.
圖5(a)和(b)為顯示在一般的垂直流式玻璃基板減薄裝置中的刀片噴嘴結構並分別說明減薄前後之蝕刻工藝的截面圖。 5(a) and (b) are cross-sectional views showing the blade nozzle structure in a general vertical flow type glass substrate thinning apparatus and illustrating etching processes before and after thinning, respectively.
以下,請參照圖式對本發明的較佳實施例進行詳細說明。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
如圖3(a)~(e)所示,垂直流式的玻璃基板蝕刻用刀片500,其端部製作成彎曲形狀,即由波紋形狀、鋸齒形狀、四角凹凸、菱形凹凸、圓形凹凸等形狀形成刀片500的端部。如圖3(a)~(e)所示之立體圖中的刀片500截面,刀片200越向端部厚度越薄,並且,蝕刻溶液沿著刀片500的外周面流下,如圖4所示。並且,可將刀片500的內部做成空心的空間,在上端設置供蝕刻溶液流入的縫隙,在彎曲的端部形成孔(hole)或裂縫,此時,蝕刻溶液不僅可通過刀片500的外周面流下,而且還可通過孔或裂縫流入。縫隙的厚度、孔、裂縫等的大小至幅度可為數毫米,孔可形成於每個彎曲部,可形成多個,並且裂縫可形成為一體形縫隙形態或多個裂縫。 As shown in FIGS. 3(a) to 3(e), the vertical flow type glass substrate etching blade 500 has a curved shape at its end, that is, a corrugated shape, a zigzag shape, a square unevenness, a rhombic unevenness, a circular unevenness, or the like. The shape forms the end of the blade 500. As shown in the cross-section of the blade 500 in the perspective view shown in Figs. 3(a) to (e), the thickness of the blade 200 toward the end portion is thinner, and the etching solution flows down along the outer peripheral surface of the blade 500 as shown in Fig. 4. Further, the inside of the blade 500 can be made into a hollow space, a slit for the inflow of the etching solution is provided at the upper end, and a hole or a crack is formed at the bent end portion, and at this time, the etching solution can pass not only the outer peripheral surface of the blade 500. It flows down and can also flow in through holes or cracks. The thickness of the slit, the size of the hole, the crack, and the like may be several millimeters, the hole may be formed in each of the bent portions, and a plurality of holes may be formed, and the slit may be formed into a one-piece slit shape or a plurality of cracks.
如上所述的刀片500的彎曲的端部與現有的一字型端部不同,起到稍微分散蝕刻溶液的流動的作用,從而,能夠達到不必考慮蝕刻溶液的黏度或表面張力,達到使蝕刻溶液不向玻璃基板100內部偏斜,而向兩端部擴張的效果。 The curved end portion of the blade 500 as described above functions differently from the existing inline end portion, and functions to slightly disperse the flow of the etching solution, thereby enabling the etching solution to be achieved regardless of the viscosity or surface tension of the etching solution. The effect of not being deflected toward the inside of the glass substrate 100 but expanding toward both ends.
因此,可防止現有的刀片200由於蝕刻溶液流到玻璃基板100的端部的量較少,使得玻璃基板100的端部產生斑點的現象。並且,現有的刀片200,因蝕刻溶液在玻璃基板100的上部的流動速度快,會多少影響蝕刻作用,但是,本發明通過端部的彎曲形狀,使得蝕刻溶液的流動速度稍微趨緩,因此,玻璃基板100上部的蝕刻也與其他部分相同,從而,整體上能夠均勻地進行蝕刻。 Therefore, it is possible to prevent the existing blade 200 from flowing to the end portion of the glass substrate 100 due to the etching solution to be small, so that the end portion of the glass substrate 100 is spotted. Further, in the conventional blade 200, since the flow rate of the etching solution on the upper portion of the glass substrate 100 is fast, the etching effect is somewhat affected. However, the present invention makes the flow rate of the etching solution slightly slow by the curved shape of the end portion. The etching of the upper portion of the glass substrate 100 is also the same as the other portions, so that the etching can be performed uniformly as a whole.
所述彎曲的端部的形狀,其凹凸部的節距5至15mm左右,較佳地,形成為10mm左右,由此,可使從刀片500流下的蝕刻溶液的流動寬幅整體上均勻地擴張,並且,與現有的一字型刀片200相比,蝕刻溶液的寬幅再擴大了7mm。 The shape of the curved end portion has a pitch of the uneven portion of about 5 to 15 mm, preferably about 10 mm, whereby the flow width of the etching solution flowing down from the blade 500 can be uniformly expanded as a whole. Moreover, the width of the etching solution is further expanded by 7 mm compared to the existing inline blade 200.
並且,本發明之刀片500是將現有的以2至3mm構成的刀片200的厚度稍微增加,至3至5mm左右,由此,可增加到達玻璃基板100的上部的蝕刻溶液的流量。 Further, the blade 500 of the present invention slightly increases the thickness of the conventional blade 200 having a thickness of 2 to 3 mm to about 3 to 5 mm, whereby the flow rate of the etching solution reaching the upper portion of the glass substrate 100 can be increased.
由此,通過在刀片500的端部形成的彎曲形狀,可增加蝕刻溶液寬幅,從而,無需特別考慮刀片500和玻璃基板100之間的對齊精密度,從而操作更加便利。即,現有的刀片200,需要特別注意對齊工藝,以防止蝕刻溶液流量的寬幅不及玻璃基板100的寬幅的情況。此現象可參照圖5(a)和(b)所示,顯示在一般的垂直流式玻璃基板減薄裝置中的刀片噴嘴600結構,其利用蝕刻溶液700對於玻璃基板100進行減薄工藝,玻璃基板100減薄前寬幅大約1.0或1.2釐米,減薄後大約為0.4~0.9釐米。但本發明通過彎 曲的端部擴大了流量寬幅,使得蝕刻溶液充分地覆蓋玻璃基板100的整個表面,從而,可節省在對齊工藝中花費的時間和精力。 Thereby, the width of the etching solution can be increased by the curved shape formed at the end of the blade 500, so that the alignment precision between the blade 500 and the glass substrate 100 need not be particularly considered, and the operation is more convenient. That is, the conventional blade 200 requires special attention to the alignment process to prevent the flow rate of the etching solution from being wider than the width of the glass substrate 100. This phenomenon can be seen as shown in FIGS. 5(a) and (b), showing the structure of the blade nozzle 600 in a general vertical flow type glass substrate thinning apparatus, which uses the etching solution 700 to thin the glass substrate 100, glass The substrate 100 has a width of about 1.0 or 1.2 cm before being thinned, and about 0.4 to 0.9 cm after thinning. But the invention passes the bend The end of the curved portion expands the flow width so that the etching solution sufficiently covers the entire surface of the glass substrate 100, thereby saving time and effort spent in the alignment process.
並且,通過擴大蝕刻溶液的幅度及覆蓋玻璃基板100的整個表面的均勻的流量,提高玻璃基板100的減薄的均勻度,並通過增加刀片200的厚度,增加了蝕刻溶液的流量,從而,可縮短減薄工藝作業時間,整體上可提高生產效率。 Moreover, by increasing the amplitude of the etching solution and covering a uniform flow rate of the entire surface of the glass substrate 100, the uniformity of thinning of the glass substrate 100 is improved, and by increasing the thickness of the blade 200, the flow rate of the etching solution is increased, thereby Shorten the operation time of the thinning process and improve the overall production efficiency.
本發明的權利並非限定於如上所述的實施例,而是被所記載的權利要求範圍所定義,本發明領域的技術人員在權利要求範圍中記載的權利範圍內進行各種變形和改動。 The present invention is not limited to the embodiments described above, but is defined by the scope of the appended claims, and various modifications and changes can be made within the scope of the appended claims.
本發明的有益效果在於:根據本發明,通過在刀片的端部形成的彎曲,能夠防止蝕刻溶液向內側發生凝聚現象,而沿著刀片的整個長度均勻地分散,並均勻地流向處於下端的玻璃基板的整個表面,從而,可均勻地蝕刻玻璃基板的整個表面,並且,通過在刀片的端部形成的彎曲,增加了蝕刻溶液的寬幅,從而,無需特別考慮刀片和玻璃基板的對齊精密度,使操作更加便利,並且,由於增加了刀片的厚度,通過增加蝕刻溶液的流量,從而,可縮短減薄工藝作業時間,整體上提高了生產效率。 The present invention has an advantageous effect that, according to the present invention, by the bending formed at the end portion of the blade, it is possible to prevent the etching solution from agglomerating toward the inside, and uniformly disperse along the entire length of the blade, and uniformly flow to the glass at the lower end. The entire surface of the substrate, whereby the entire surface of the glass substrate can be uniformly etched, and the width of the etching solution is increased by the bending formed at the end of the blade, thereby eliminating the need to specifically consider the alignment precision of the blade and the glass substrate. This makes the operation more convenient, and by increasing the thickness of the blade, by increasing the flow rate of the etching solution, the thinning process time can be shortened, and the overall production efficiency is improved.
100‧‧‧玻璃基板 100‧‧‧ glass substrate
500‧‧‧刀片 500‧‧‧blade
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---|---|---|---|---|
KR100908884B1 (en) * | 2007-11-01 | 2009-07-23 | 주식회사 해진아이엠피 | Glass Etching Device with Double Pipe Nozzle |
KR100887344B1 (en) | 2007-11-21 | 2009-03-06 | 에이스하이텍 주식회사 | Etching device of glass substrate for display) |
KR100889949B1 (en) | 2008-04-10 | 2009-03-20 | 주식회사 엠엠테크 | Method for slimming glass and slimming system of the same |
KR101009643B1 (en) * | 2008-07-16 | 2011-01-19 | 삼성모바일디스플레이주식회사 | Substrate etching apparatus |
CN101723598B (en) * | 2008-10-22 | 2012-05-30 | 株式会社海赈Imp | Glass etching equipment with double-layer tube nozzle |
-
2012
- 2012-08-09 KR KR1020120087501A patent/KR101338849B1/en not_active IP Right Cessation
-
2013
- 2013-05-21 CN CN201310190989.2A patent/CN103570249A/en active Pending
- 2013-05-24 TW TW102118507A patent/TW201407680A/en unknown
Also Published As
Publication number | Publication date |
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CN103570249A (en) | 2014-02-12 |
KR101338849B1 (en) | 2013-12-06 |
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