TW201406798A - A self-imageable layer forming polymer and compositions thereof - Google Patents
A self-imageable layer forming polymer and compositions thereof Download PDFInfo
- Publication number
- TW201406798A TW201406798A TW102103896A TW102103896A TW201406798A TW 201406798 A TW201406798 A TW 201406798A TW 102103896 A TW102103896 A TW 102103896A TW 102103896 A TW102103896 A TW 102103896A TW 201406798 A TW201406798 A TW 201406798A
- Authority
- TW
- Taiwan
- Prior art keywords
- polymer
- copolymer
- group
- maleic anhydride
- repeating unit
- Prior art date
Links
Landscapes
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
本專利申請案根據35 U.S.C.§119有權具有且主張2011年7月4日申請之美國臨時專利申請案第61/507685號及2011年10月19日申請之美國臨時專利申請案第61/548832號之優先權,兩者均以全文引用的方式併入本文中。 U.S. Provisional Patent Application No. 61/507,685, filed on Jan. 4, 2011, and U.S. Provisional Patent Application No. 61/548,832, filed on Jan. The priority of the number, both of which are incorporated herein by reference in their entirety.
本發明大體上係關於包含適用於形成可自我成像的層之降冰片烯型重複單元與非降冰片烯型重複單元的共聚物及其組成物,且更特定言之,本發明係關於包含來自於降冰片烯型單體之重複單元及來自於順丁烯二酸酐型單體之重複單元的該等共聚物及其組成物,其係用於使由其製得之層在該等層成像曝露於光化輻射時具有可自我成像性。 The present invention generally relates to copolymers and compositions thereof comprising norbornene-type repeat units and non-norbornene-type repeat units suitable for forming self-imageable layers, and more particularly, the invention relates to inclusions from a repeating unit of a norbornene-type monomer and a copolymer derived from a repeating unit of a maleic anhydride type monomer and a composition thereof for imaging a layer produced therefrom in the layer It is self-imageable when exposed to actinic radiation.
在過去的若干年中,微電子(諸如半導體)及光電工業已需要使裝置幾何形狀越來越小。儘管在一些裝置製造領域中,亞微型裝置幾何形狀多年來已司空見慣,但在其他領域中,諸如液晶顯示器(LCD)、有機發光二極體(OLED)及多種射頻(Rf)及微波裝置(例如RFIC/MMIC、開關、耦合器、移相器、SAW過濾器及SAW雙工器),該等裝置幾何形狀 僅在最近才接近亞10微米水準。 In the past few years, microelectronics (such as semiconductors) and the optoelectronics industry have needed to make device geometries smaller and smaller. Although in some device manufacturing fields, submicron device geometries have been commonplace for many years, in other fields, such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and a variety of radio frequency (Rf) and microwave devices (eg, RFIC/MMIC, switches, couplers, phase shifters, SAW filters and SAW duplexers), these device geometries It has only recently approached the sub-10 micron level.
該等較小幾何形狀需要具有低介電常數之介電材料以降低或消除相鄰信號線之間或信號線與裝置特徵(例如像素電極)之間由電容耦合引起之任何串擾。儘管許多低介電(低K)材料可用於微電子裝置中,但對於光電裝置,該等材料必須在可見光譜中亦為基本上透明、無需與該光電裝置中之其他元件不相容的高溫處理(超過300℃)且在進行大規模光電裝置製造時成本較低且可行。 These smaller geometries require a dielectric material having a low dielectric constant to reduce or eliminate any crosstalk caused by capacitive coupling between adjacent signal lines or between signal lines and device features (e.g., pixel electrodes). While many low dielectric (low K) materials can be used in microelectronic devices, for optoelectronic devices, such materials must also be substantially transparent in the visible spectrum, without the need for high temperatures incompatible with other components in the photovoltaic device. Treatment (over 300 ° C) and low cost and feasibility when manufacturing large scale photovoltaic devices.
因此,需要能夠形成可自我成像的層從而無需沈積單獨成像層之材料。該材料亦應易於施用於基板,在超過250℃之溫度下具有低介電常數(3.9或3.9以下)及熱穩定性。 Therefore, there is a need for materials that are capable of forming self-imageable layers without the need to deposit separate imaging layers. The material should also be easy to apply to the substrate, having a low dielectric constant (3.9 or less) and thermal stability at temperatures in excess of 250 °C.
下文參考以下隨附圖式及/或影像描述本發明之具體實例。當提供圖式時,其為僅出於說明性目的而提供的裝置之簡化部分的圖式。 Specific examples of the invention are described below with reference to the drawings and/or images. When a schema is provided, it is a drawing of a simplified portion of the device provided for illustrative purposes only.
圖1為描繪本發明之製造(DRM)ROMA共聚物具體實例之方法的流程圖;圖2a、2b、2c及2d為紅外光譜之一部分,其展示經受過本發明之溶解速率改良處理具體實例之共聚物的之前及之後的羰基伸展頻 率;圖3為經受過本發明之溶解速率改良處理具體實例之ROMA共聚物之溶解速率變化與反應時間之間的圖形表示;圖4a及4b為由本發明之(DRM)ROMA共聚物薄膜具體實例形成之薄膜在成像曝光後獲得之10μm及5μm線及空間之顯微照片。 1 is a flow chart depicting a method of making a specific example of a (DRM) ROMA copolymer of the present invention; FIGS. 2a, 2b, 2c, and 2d are a portion of an infrared spectrum showing a specific example of a dissolution rate improving treatment that has been subjected to the present invention. Carbonyl stretching frequency before and after the copolymer Figure 3 is a graphical representation of the dissolution rate change of the ROMA copolymer subjected to the dissolution rate modification treatment of the present invention and the reaction time; Figures 4a and 4b are specific examples of the (DRM) ROMA copolymer film of the present invention. Micrographs of lines and spaces of 10 μm and 5 μm obtained after imagewise exposure of the formed film.
本發明之具體實例係關於如下文所定義之包含至少一個來自於降冰片烯型單體之重複單元及至少一個來自於順丁烯二酸酐型單體之重複單元之共聚物及包含該等共聚物之組成物。該等共聚物組成物能夠形成適用作製造微電子及光電裝置之層的可自我成像的薄膜。亦即,在對光化輻射成像曝光後,該等層(或薄膜)可經顯影以形成圖案化層(或薄膜),其中該圖案反映用於使層(或薄膜)曝光之影像。由此可提供作為或將成為該等微電子及/或光電裝置之一部分的結構。 Specific examples of the invention relate to copolymers comprising at least one repeating unit derived from a norbornene-type monomer and at least one repeating unit derived from a maleic anhydride type monomer, as defined below, and comprising such copolymers The composition of the object. The copolymer compositions are capable of forming self-imageable films suitable for use in the fabrication of layers of microelectronics and optoelectronic devices. That is, after imaging exposure to actinic radiation, the layers (or films) can be developed to form a patterned layer (or film) that reflects the image used to expose the layer (or film). It is thus possible to provide a structure that is or will be part of such microelectronic and/or optoelectronic devices.
如本文中所用,除非明確地且肯定地限於一個指示物,否則冠詞「一」及「該」包括複數個指示物。 As used herein, the articles "a", "the"
因為本文及隨附申請專利範圍中所用之所有關於成分量、反應條件等之數目、值及/或表述在獲得該等值時會碰到多種量測不確定性,因此除非另有說明,否則全部應理解為在所有情況下均由術語「約」修飾。 Because all numbers, values, and/or expressions relating to the amounts of ingredients, reaction conditions, and the like, as used herein and in the scope of the accompanying claims, are subject to various measurement uncertainties, unless otherwise stated. All should be understood to be modified by the term "about" in all cases.
當本文中揭示數值範圍時,該範圍為連續的,包括該範圍內之最小值及最大值以及該最小值與該最大值之間的每一個值。又,當範圍係關於整數時,則包括該範圍之最小值與最大值之間的每一個整數。此外,當提供多個範圍以描述特徵或特性時,該等範圍可組合。亦即,除非另有 說明,否則本文中揭示之所有範圍均應理解為包含其中所歸入的任何及所有子範圍。舉例而言,所述範圍「1至10」應視為包括最小值1與最大值10之間的任何及所有子範圍。範圍1至10之例示性子範圍包括(但不限於)1至6.1、3.5至7.8及5.5至10。 When a range of values is disclosed herein, the range is continuous, including the minimum and maximum values within the range, and each value between the minimum and the maximum. Also, when the range is an integer, then each integer between the minimum and maximum of the range is included. In addition, when a plurality of ranges are provided to describe features or characteristics, the ranges can be combined. That is, unless otherwise All ranges disclosed herein are to be understood as being inclusive of any and all sub-ranges. For example, the range "1 to 10" should be considered to include any and all subranges between a minimum value of 1 and a maximum value of 10. Exemplary subranges of ranges 1 to 10 include, but are not limited to, 1 to 6.1, 3.5 to 7.8, and 5.5 to 10.
如本文中所用,術語「共聚物組成物」或「聚合物組成物」在本文中可互換使用且意欲包括至少一種合成聚合物或共聚物以及來自於在合成該等共聚物時所伴隨的引發劑、溶劑或其他元素之殘餘物,其中該等殘餘物應理解為未以共價形式併入組成物中。該等視為聚合物組成物之一部分的殘餘物及其他元素典型地與聚合物混合或共同攪拌使得其在容器之間或在溶劑或分散介質之間轉移時傾向於與聚合物保持在一起。共聚物組成物亦可包括在共聚物合成後所添加的用於提供或改良該組成物之特定性質的材料。 As used herein, the terms "copolymer composition" or "polymer composition" are used interchangeably herein and are intended to include at least one synthetic polymer or copolymer and from the initiation associated with the synthesis of such copolymers. Residues of agents, solvents or other elements, wherein such residues are understood to be not incorporated into the composition in a covalent form. The residue and other elements considered to be part of the polymer composition are typically mixed or co-stirred with the polymer such that it tends to remain with the polymer as it is transferred between the containers or between the solvent or dispersion medium. The copolymer composition may also include materials added after the copolymer is synthesized to provide or improve the specific properties of the composition.
如本文中所用,「烴基(hydrocarbyl)」係指含有碳及氫原子之基團的自由基,其非限制性實例為烷基、環烷基、芳基、芳烷基、烷芳基及烯基。術語「鹵烴基(halohydrocarbyl)」係指其中至少一個氫已由鹵素置換的烴基。術語全鹵烴基係指其中所有氫均由鹵素置換之烴基。 As used herein, "hydrocarbyl" refers to a radical containing a group of carbon and hydrogen atoms, non-limiting examples of which are alkyl, cycloalkyl, aryl, aralkyl, alkaryl and alkene. base. The term "halohydrocarbyl" refers to a hydrocarbon group in which at least one hydrogen has been replaced by a halogen. The term perhalohydrocarbyl refers to a hydrocarbyl group in which all hydrogens are replaced by halogen.
如本文中所用,「烷基(alkyl)」係指甲基或乙基及碳鏈長度為例如適當的C3至C25基團之直鏈或分支鏈非環狀或環狀飽和烴基團。合適烷基之非限制性實例包括(但不限於)-(CH2)3CH3、-(CH2)4CH3、-(CH2)5CH3、-(CH2)9CH3、-(CH2)23CH3、環戊基及環己基。 As used herein, "alkyl (alkyl)" means methyl or ethyl and carbon chain length of C 3 to, for example, an appropriate C 25 linear or branched group of non-cyclic or cyclic saturated hydrocarbon group. Non-limiting examples of suitable alkyl groups include, but are not limited to, -(CH 2 ) 3 CH 3 , -(CH 2 ) 4 CH 3 , -(CH 2 ) 5 CH 3 , -(CH 2 ) 9 CH 3 , -(CH 2 ) 23 CH 3 , cyclopentyl and cyclohexyl.
如本文中所用,「芳基(aryl)」係指芳族基,其包括(但不限於)諸如苯基、聯苯基、苯甲基、二甲苯基、萘基、蒽基及其類似基團 之基團。 As used herein, "aryl" refers to an aromatic group including, but not limited to, phenyl, biphenyl, benzyl, xylyl, naphthyl, anthryl and the like. group The group.
術語「烷芳基(alkaryl)」或「芳烷基(aralkyl)」在本文中可互換使用且係指經至少一個芳基(例如苯基)取代且烷基碳鏈長度為適當的C1至C25之直鏈或分支鏈非環狀烷基。此外應理解,上述非環狀烷基可為鹵烷基或全鹵烷基。 The term "alkyl aryl group (alkaryl)" or "arylalkyl (aralkyl)" herein used interchangeably and refers to an aryl group with at least one (e.g., phenyl) and substituted alkyl carbon chain length of C 1 to an appropriate a straight chain or branched non-cyclic alkyl group of C 25. Furthermore, it is to be understood that the above acyclic alkyl group may be a haloalkyl group or a perhaloalkyl group.
如本文中所用,術語「烯基(alkenyl)」係指乙烯或具有至少一個雙鍵且烯基碳鏈長度為適當的C3至C25之直鏈或分支鏈非環狀或環狀烴基。非限制性實例尤其包括乙烯基、丙烯基、丁烯基及其類似基團。 As used herein, the term "alkenyl group (alkenyl of)" means ethylene or having at least one double bond and alkenyl carbon chain length of a suitable linear C 3 to C 25, or of a non-cyclic branched or cyclic hydrocarbon group. Non-limiting examples include, inter alia, vinyl, propenyl, butenyl, and the like.
如本文中所用,術語「雜烴基(heterohydrocarbyl)」係指其中碳鏈中之至少一個碳由N、O、S、Si或P置換之任何先前描述之烴基、鹵烴基及全鹵烴基。非限制性實例包括雜環芳族基(諸如吡咯基、呋喃基及其類似基團)以及非芳族基(諸如醚、硫醚及矽烷基醚)。術語「醇(alkylol)」係指包括至少一個羥基之烷基。 As used herein, the term "heterohydrocarbyl" refers to any of the previously described hydrocarbyl, halohydrocarbyl and perhalohydrocarbyl groups wherein at least one of the carbon chains is replaced by N, O, S, Si or P. Non-limiting examples include heterocyclic aromatic groups such as pyrrolyl, furyl and the like, as well as non-aromatic groups such as ethers, thioethers and decyl ethers. The term "alkylol" refers to an alkyl group comprising at least one hydroxyl group.
此外應理解,任何上述烴基、鹵烴基、全鹵烴基及雜烴基部分均可視需要進一步經取代。合適取代基之非限制性實例尤其包括羥基、苯甲基、羧酸及羧酸酯基、醯胺及醯亞胺。 It is further understood that any of the above hydrocarbyl, halohydrocarbyl, perhalohydrocarbyl and heterohydrocarbyl moieties may be further substituted as desired. Non-limiting examples of suitable substituents include, in particular, hydroxyl, benzyl, carboxylic acid and carboxylate groups, decylamines and quinone imines.
本發明之具體實例包含具有至少一個如下文所定義之來自於降冰片烯型單體之重複單元及至少一個如下文所定義之來自於順丁烯二酸酐型單體之重複單元的共聚物。 Specific examples of the invention include copolymers having at least one repeating unit derived from a norbornene-type monomer as defined below and at least one repeating unit derived from a maleic anhydride type monomer as defined below.
術語「降冰片烯型(norbornene-type)」、「聚環烯(polycycloolefin)」及「聚(環狀)烯烴(poly(cyclic)olefin)」在本文中可互換使用且係指包含至少一個降冰片烯部分(諸如下文展示之部分)的單體(或
所得重複單元):
該部分為最簡單的降冰片烯型或聚(環狀)烯烴單體雙環庚-2-烯,通常稱為降冰片烯。如上文所描述,術語「降冰片烯型」單體或重複單元在本文中用於包含降冰片烯本身以及任何經取代之降冰片烯,以及其任何經取代及未經取代之更高級環狀衍生物。下文展示之式I及Ia分別表示由本發明之具體實例包含之降冰片烯型單體及降冰片烯型重複單元:
其中m為在0至5範圍內之整數且R1、R2、R3及R4在每次出現時獨立地表示氫或烴基。 Wherein m is an integer in the range of 0 to 5 and R 1 , R 2 , R 3 and R 4 independently represent hydrogen or a hydrocarbyl group at each occurrence.
如本文中所用,應理解,術語「順丁烯二酸酐型(maleic anhydride-type)」係指包含至少一個順丁烯二酸酐型部分之單體(諸如以下式II所展示)及由其獲得之重複單元(諸如以下式IIa、IIb及IIc所展示):
其中R5及R6為相同或不同烴基。 Wherein R 5 and R 6 are the same or different hydrocarbyl groups.
亦應理解,術語「順丁烯二酸酐型單體」包括式III之單體
其中R7與R8相同或不同且係選自氫、甲基及乙基。此外應理解,與式III、IIb與IIc之重複單元可來自於式II之單體相同,類似重複單元可來自於式III之順丁烯二酸酐型單體且包含於本發明之具體實例中。 Wherein R 7 and R 8 are the same or different and are selected from the group consisting of hydrogen, methyl and ethyl. In addition, it is to be understood that the repeating units of the formulae III, IIb and IIc may be the same as the monomers of the formula II, and the similar repeating units may be derived from the maleic anhydride type monomer of the formula III and are included in the specific examples of the invention. .
適用於本發明之具體實例之單體大體上描述於本文中且由本文中提供之單體及取代基結構進一步描述。關於本發明之聚合物組成物具體實例,應注意,該等組成物可包含單一共聚物,該單一共聚物包含至少一個降冰片烯型重複單元及至少一個順丁烯二酸酐型重複單元。在其他具體實例中,該等聚合物組成物可包含:包含兩個或兩個以上不同類型之降冰片烯型重複單元及至少一個順丁烯二酸酐型重複單元的單一共聚物,或包含至少一個降冰片烯型重複單元及兩個或兩個以上不同類型之順丁烯二酸酐型重複單元的單一共聚物。 Monomers suitable for use in the specific examples of the invention are generally described herein and are further described by the monomers and substituent structures provided herein. With regard to specific examples of the polymer composition of the present invention, it should be noted that the compositions may comprise a single copolymer comprising at least one norbornene-type repeating unit and at least one maleic anhydride-type repeating unit. In other embodiments, the polymer composition may comprise: a single copolymer comprising two or more different types of norbornene-type repeating units and at least one maleic anhydride-type repeating unit, or at least A single copolymer of a norbornene-type repeating unit and two or more different types of maleic anhydride-type repeating units.
在又其他具體實例中,聚合物組成物可包含聚合物之摻合物,該聚合物之摻合物包含至少兩種聚合物(諸如上述聚合物)或該共聚物及降冰片烯型均聚物中之一或多者。 In still other embodiments, the polymer composition may comprise a blend of polymers comprising a blend of at least two polymers (such as the polymers described above) or homopolymers of the copolymer and norbornene. One or more of them.
當R1、R2、R3、R4、R5及R6中之任一者為烴基時,該基團可替代性描述為任何C1至C30烷基、芳基、芳烷基、烷芳基、環烷基或雜烷基。代表性烷基包括(但不限於)甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、新戊基、己基、庚基、辛基、壬基及癸基。代表性環烷基包括(但不限於)金剛烷基(adamantyl)、環戊基、環己 基及環辛基。代表性芳基包括(但不限於)苯基、萘基及蒽基。代表性芳烷基包括(但不限於)苯甲基及苯乙基。此外,應注意,以上所提及之烴基可經取代,亦即至少一個氫原子可由例如C1-C10烷基、鹵烷基、全鹵烷基、芳基及/或環烷基置換。代表性經取代之環烷基尤其包括4-第三丁基環己基及2-甲基-2-金剛烷基。非限制性代表性經取代之芳基為4-第三丁基苯基。 When any of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is a hydrocarbyl group, the group may alternatively be described as any C 1 to C 30 alkyl, aryl, aralkyl group. , alkaryl, cycloalkyl or heteroalkyl. Representative alkyl groups include, but are not limited to, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, tert-butyl, pentyl, neopentyl, hexyl, g. Base, octyl, sulfhydryl and sulfhydryl. Representative cycloalkyl groups include, but are not limited to, adamantyl, cyclopentyl, cyclohexyl, and cyclooctyl. Representative aryl groups include, but are not limited to, phenyl, naphthyl, and anthracenyl. Representative aralkyl groups include, but are not limited to, benzyl and phenethyl. Further, it should be noted that the above-mentioned hydrocarbon group may be substituted, that is, at least one hydrogen atom may be replaced by, for example, a C 1 -C 10 alkyl group, a haloalkyl group, a perhaloalkyl group, an aryl group and/or a cycloalkyl group. Representative substituted cycloalkyl groups include, inter alia, 4-tert-butylcyclohexyl and 2-methyl-2-adamantyl. A non-limiting representative substituted aryl group is 4-tert-butylphenyl.
此外,R1至R6中之任一或多者亦可為鹵烴基,其中該基團包括任何以上所提及之烴基,其中該烴基中至少一個(但並非所有)氫原子由鹵素(氟、氯、溴或碘)置換。此外,R1至R6中之任一或多者可為全鹵烴基,其中該基團包括任何以上所提及之烴基,其中該烴基中所有氫原子均由鹵素置換。代表性全氟化取代基包括(但不限於)全氟苯基、全氟甲基、全氟乙基、全氟丙基、全氟丁基及全氟己基。 Further, any one or more of R 1 to R 6 may also be a halohydrocarbyl group, wherein the group includes any of the above-mentioned hydrocarbyl groups, wherein at least one, but not all, of the hydrogen atoms in the hydrocarbyl group is halogen (fluorine) , chlorine, bromine or iodine). Further, any one or more of R 1 to R 6 may be a perhalohydrocarbyl group, wherein the group includes any of the above-mentioned hydrocarbyl groups, wherein all hydrogen atoms in the hydrocarbyl group are replaced by halogen. Representative perfluorinated substituents include, but are not limited to, perfluorophenyl, perfluoromethyl, perfluoroethyl, perfluoropropyl, perfluorobutyl, and perfluorohexyl.
在一些具體實例中,全鹵烴基可包括全鹵化苯基及全鹵化烷基。在其他具體實例中,全氟化基團可包括全氟苯基、全氟甲基、全氟乙基、全氟丙基、全氟丁基及全氟己基。除鹵素取代基外,該等具體實例之環烷基、芳基及芳烷基亦可經任何C1-C5烷基、C1-C12鹵烷基、芳基及/或環烷基取代。 In some embodiments, the perhalohydrocarbyl group can include a perhalogenated phenyl group and a perhalogenated alkyl group. In other embodiments, the perfluorinated group can include perfluorophenyl, perfluoromethyl, perfluoroethyl, perfluoropropyl, perfluorobutyl, and perfluorohexyl. The cycloalkyl, aryl and aralkyl groups of these specific examples may also be substituted by any C 1 -C 5 alkyl group, C 1 -C 12 haloalkyl group, aryl group and/or cycloalkyl group in addition to a halogen substituent. Replace.
如上文所提及,本發明之具體實例係關於包含降冰片烯型重複單元及順丁烯二酸酐型重複單元之共聚物及由其製得之組成物。該等共聚物組成物能夠形成適用作製造微電子及光電裝置之可自我成像的層的薄膜。亦即,當對光化輻射成像曝光時,該等層(或薄膜)可經顯影以形成圖案化薄膜,其中該圖案反映用於使薄膜曝光之影像。 As mentioned above, a specific example of the present invention relates to a copolymer comprising a norbornene-type repeating unit and a maleic anhydride-type repeating unit, and a composition obtained therefrom. The copolymer compositions are capable of forming films suitable for use in the fabrication of self-imageable layers of microelectronics and optoelectronic devices. That is, when imaging exposure to actinic radiation, the layers (or films) can be developed to form a patterned film, wherein the pattern reflects the image used to expose the film.
由此可提供作為或將成為該等微電子及/或光電裝置之一部 分的結構。舉例而言,該等薄膜可適用作液晶顯示器或微電子裝置中之低K介電層。應注意,該等實例僅為該可自我成像的薄膜之許多用途中的少數用途,且該等實例不用於限制該等薄膜或用於形成該等薄膜之聚合物及聚合物組成物之範疇。 Thus available or will be part of such microelectronic and/or optoelectronic devices The structure of the points. For example, the films can be used as low-k dielectric layers in liquid crystal displays or microelectronic devices. It should be noted that these examples are only a few of the many uses of the self-imageable film, and such examples are not intended to limit the scope of such films or polymers and polymer compositions used to form such films.
因此,本發明之具體實例包含共聚物,該等共聚物包含來自於上述單體之重複單元且其可使用熟習此項技術者已知的方法經自由基聚合反應獲得從而形成包含至少一種類型之降冰片烯型重複單元及順丁烯二酸酐重複單元之共聚物中間物。可用於自由基聚合反應中之引發劑之非限制性實例包括例如偶氮化合物及有機過氧化物。偶氮化合物之非限制性實例包括偶氮雙異丁腈(AIBN)、(E)-二甲基2,2'-(二氮烯-1,2-二基)雙(2-丙酸甲酯)(AMMP)、(E)-2,2'-(二氮烯-1,2-二基)雙(2,4-二甲基戊腈)(ADMPN)及1,1'-偶氮雙(環己甲腈)(ABCN)。有機過氧化物之非限制性實例包括過氧化氫、二-第三丁基過氧化物、苯醯過氧化物及甲基乙基酮過氧化物。 Thus, specific examples of the invention comprise copolymers comprising repeating units derived from the above monomers and which are obtainable by free radical polymerization using methods known to those skilled in the art to form at least one type A copolymer intermediate of a norbornene-type repeating unit and a maleic anhydride repeating unit. Non-limiting examples of initiators that can be used in the free radical polymerization include, for example, azo compounds and organic peroxides. Non-limiting examples of azo compounds include azobisisobutyronitrile (AIBN), ( E )-dimethyl 2,2'-(diazene-1,2-diyl) bis(2-propionic acid) Ester) (AMMP), ( E )-2,2'-(diazepine-1,2-diyl)bis(2,4-dimethylvaleronitrile) (ADMPN) and 1,1'-azo Bis(cyclohexanecarbonitrile) (ABCN). Non-limiting examples of organic peroxides include hydrogen peroxide, di-tert-butyl peroxide, phenylhydrazine peroxide, and methyl ethyl ketone peroxide.
本發明之一些聚合物具體實例係藉由使上述共聚物中間物與足以引起順丁烯二酸酐重複單元開環之試劑接觸且由此形成式IIa及/或IIb之重複單元而由該等中間物形成。該聚合物具體實例由式IVa表示,其中大體上發現降冰片烯型重複單元與順丁烯二酸酐型重複單元具有交替性。 Specific examples of some of the polymers of the present invention are made by contacting the copolymer intermediate with an agent sufficient to cause ring opening of the maleic anhydride repeating unit and thereby forming a repeating unit of Formula IIa and/or IIb. Object formation. A specific example of the polymer is represented by the formula IVa, wherein the norbornene-type repeating unit is generally found to have an alternating relationship with the maleic anhydride-type repeating unit.
本發明之其他共聚物具體實例包含至少一個式Ia之降冰片烯型重複單元、至少一個式IIa及/或IIb之開環順丁烯二酸酐型重複單元及式IIc之重複單元,如由式IVb所示。亦發現由式IVb表示之共聚物具體實例中之降冰片烯型重複單元及順丁烯二酸酐型重複單元具有交替性。 Specific examples of other copolymers of the invention comprise at least one norbornene-type repeating unit of formula Ia, at least one ring-opening maleic anhydride-type repeating unit of formula IIa and/or IIb, and a repeating unit of formula IIc, Shown in IVb. It has also been found that the norbornene-type repeating unit and the maleic anhydride-type repeating unit in the specific examples of the copolymer represented by the formula IVb have an alternation.
其中對於式IVa及IVb,R1、R2、R3、R4、R5及R6係如先前所定義且儘管未特定展示,但應理解,式IVa及IVb包括來自於由式III表示之單體的順丁烯二酸酐型重複單元。 Wherein for Formulas IVa and IVb, R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are as previously defined and although not specifically shown, it is understood that Formulas IVa and IVb are derived from Formula III. A monomeric maleic anhydride type repeating unit.
除聚合物具體實例外,本發明之聚合物組成物具體實例通常亦包含至少一種鑄造溶劑、至少一種感光化合物(photo active compound,PAC)及至少一種環氧樹脂,其中該環氧樹脂包含至少兩個環氧基。 In addition to the polymer specific examples, the polymer composition of the present invention typically also includes at least one casting solvent, at least one photoactive compound (PAC), and at least one epoxy resin, wherein the epoxy resin comprises at least two Epoxy groups.
例示性鑄造溶劑包括(但不限於)丙二醇單甲基醚(PGME)、丙二醇單甲基醚乙酸酯(PGMEA)、乳酸乙酯、甲基異丁基甲醇(MIBC)、γ丁內酯(GBL)、N-甲基吡咯啶酮(NMP)及甲基正戊基酮(MAK) 及其混合物。 Exemplary casting solvents include, but are not limited to, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate, methyl isobutyl methanol (MIBC), gamma butyrolactone ( GBL), N-methylpyrrolidone (NMP) and methyl n-amyl ketone (MAK) And mixtures thereof.
例示性PAC包括(但不限於)PAC-5570(St.Jean Photochemicals公司,Quebec,Canada)、SCL6(Secant Chemicals公司,Winchendon,MA,USA)、Tris-P 3M6C-2-201(本文中亦稱為TrisP)、TS-200、TS-250、TS-300及4NT-300(均來自Toyo Gosei有限公司,Chiba,Japan),其結構描繪如下:
對於TS-200,67% D為DNQ,對於TS-250,83% D為DNQ,對於TS-300,100% D為DNQ;且其中『D』或『Q』係指DNQ,其為以下重氮萘醌型(diazonaphthoquinone-type)結構中之一種或為氫原子。 For TS-200, 67% D is DNQ, for TS-250, 83% D is DNQ, and for TS-300, 100% D is DNQ; and where "D" or "Q" refers to DNQ, which is the following One of the diazonaphthoquinone-type structures is either a hydrogen atom.
例示性PAC亦包括(但不限於)美國專利第7,524,594號中自第13欄第39行開始至第20欄中之集合式9z中所揭示之PAC。該等PAC提供於下文中。 Exemplary PACs also include, but are not limited to, the PACs disclosed in U.S. Patent No. 7,524,594, from col. 13, line 39, to col. 9z in column 20. These PACs are provided below.
例示性如上文所提及之環氧樹脂及其他交聯添加劑包括(但不限於)雙酚A環氧樹脂(LX-1-Daiso Chemical公司,Osaka,Japan)、2,2'-((((1-(4-(2-(4-(環氧乙烷-2-基甲氧基)苯基)丙-2-基)苯基)乙烷-1,1-二基)雙(4,1-伸苯基))雙(氧基))雙(亞甲基))雙(環氧乙烷)(Techmore VG3101L-Mitsui Chemical公司)、三羥甲基丙烷三縮水甘油醚(TMPTGE-CVC Specialty
Chemicals公司)及1,1,3,3,5,5-六甲基-1,5-雙(3-(環氧乙烷-2-基甲氧基)丙基)三矽氧烷(DMS-E09-Gelest公司),如下文所示:
又其他例示性環氧樹脂或交聯添加劑尤其包括Araldite MT0163及Araldite CY179(由Ciba Geigy製造);及EHPE-3150、Epolite GT300及(由Daicel Chemical製造)。 Still other exemplary epoxy resins or crosslinking additives include, inter alia, Araldite MT0163 and Araldite CY179 (manufactured by Ciba Geigy); and EHPE-3150, Epolite GT300 and (manufactured by Daicel Chemical).
本發明之一些具體實例包含以下結構,諸如光電結構,其包 括至少一個由本發明之共聚物組成物具體實例之薄膜形成的可自我成像的層。如上文所提及,該組成物具體實例之共聚物包含至少一個來自於降冰片烯型單體之重複單元及至少一個來自於順丁烯二酸酐型單體之重複單元。聚合物組成物具體實例進一步包含至少一種鑄造溶劑、至少一種感光化合物(PAC)及至少一種環氧樹脂。 Some specific examples of the invention include the following structures, such as photovoltaic structures, which are packaged A self-imageable layer formed from at least one film of a specific example of the copolymer composition of the present invention. As mentioned above, the copolymer of the specific embodiment of the composition contains at least one repeating unit derived from a norbornene-type monomer and at least one repeating unit derived from a maleic anhydride-type monomer. The polymer composition specific example further comprises at least one casting solvent, at least one photosensitive compound (PAC), and at least one epoxy resin.
關於本發明之組成物具體實例,該等具體實例提供「正型(positive tone)」可自我成像的薄膜。通常,對於正型組成物,由該組成物形成之層的曝光部分與未曝露於該輻射之部分相比變得更易於溶於顯影劑溶液中。在各種情況下,在顯影過程期間使用鹼水溶液洗去更易於溶解的部分。上述曝光部分在鹼水溶液中增加之溶解度係由添加至組成物中之至少一種PAC引起,該至少一種PAC產生羧酸從而使得曝光部分與其中PAC保持不變化之任何未曝光部分相比在鹼水溶液中之溶解度提高。 With respect to specific embodiments of the compositions of the present invention, such specific examples provide a "positive tone" self-imageable film. Generally, for a positive composition, the exposed portion of the layer formed from the composition becomes more soluble in the developer solution than the portion not exposed to the radiation. In each case, the more soluble portion is washed away with an aqueous alkali solution during the development process. The solubility of the above exposed portion in the aqueous alkali solution is caused by at least one PAC added to the composition, the at least one PAC producing a carboxylic acid such that the exposed portion is in an aqueous alkali solution compared to any unexposed portion in which the PAC remains unchanged. The solubility in the solution is improved.
本發明之上述結構具體實例可由以下步驟容易地形成:首先在合適基板上澆鑄聚合物組成物以形成聚合物組成物之層,接著加熱基板至適當溫度保持適當時間,其中該時間及溫度足以移除該組成物中之基本上所有鑄造溶劑。在該第一次加熱後,用適當波長之光化輻射對層進行成像曝光。如熟習此項技術者已知,上述成像曝光引起層之曝光部分中所含PAC發生化學反應,該化學反應使該曝光部分於鹼水溶液(通常為氫氧化四甲基銨(TMAH)溶液)中之溶解速率提高。以此方式,移除該等曝光部分且保留未曝光部分。接著進行第二次加熱以引起部分聚合物與環氧樹脂添加劑交聯,因此使該等未曝光部分之聚合物基本上「固化」從而形成本發明之上述結構具體實例。 The above structural specific examples of the present invention can be easily formed by first casting a polymer composition on a suitable substrate to form a layer of a polymer composition, and then heating the substrate to an appropriate temperature for a suitable time, wherein the time and temperature are sufficient to shift Essentially all of the casting solvent in the composition. After this first heating, the layer is imagewise exposed with actinic radiation of the appropriate wavelength. As is known to those skilled in the art, the above-described imagewise exposure causes a chemical reaction of the PAC contained in the exposed portion of the layer, which chemically reacts the exposed portion in an aqueous alkali solution (usually a tetramethylammonium hydroxide (TMAH) solution). The dissolution rate is increased. In this way, the exposed portions are removed and the unexposed portions are retained. A second heating is then carried out to cause partial crosslinking of the polymer with the epoxy resin additive, thereby substantially "cure" the polymer of the unexposed portions to form the above-described structural specific examples of the present invention.
以下實施例(本質上為非限制性)說明製造本發明之共聚物具體實例之方法。該等實施例說明首先形成先前提及之共聚物中間物,本文中稱為環狀烯烴順丁烯二酸酐(COMA)共聚物。此外,該等實施例描述形成該等COMA共聚物中間物之開環類似物,本文中稱為ROMA共聚物,且該等實施例進一步揭示形成溶解速率改良(DRM)之ROMA共聚物。 The following examples, which are essentially non-limiting, illustrate the methods of making the specific examples of the copolymers of the present invention. These examples illustrate the formation of the previously mentioned copolymer intermediates, referred to herein as cyclic olefin maleic anhydride (COMA) copolymers. Moreover, these examples describe ring-opening analogs that form intermediates of such COMA copolymers, referred to herein as ROMA copolymers, and such embodiments further disclose ROMA copolymers that form dissolution rate improvement (DRM).
現參見圖1,提供適用於形成該(DRM)ROMA共聚物之通用處理流程。特定言之,步驟100為降冰片烯型單體與順丁烯二酸酐於合適聚合溶劑中聚合以形成上述COMA共聚物。在步驟110中,首先用強鹼之混合物處理該COMA共聚物之溶液以使酐環開環成為醇(例如甲醇或丁醇),從而形成具有單酯及鹽部分之ROMA共聚物。接著在步驟120中用酸(諸如甲酸或鹽酸水溶液)處理該ROMA共聚物以使羧酸鹽部分轉化為其酸形式。在步驟130中,用合適的水性及有機溶劑之混合物洗滌步驟120之ROMA共聚物以移除任何剩餘無機物,留下共聚物及有機相中之任何水性不可溶殘餘單體。接著在步驟140中用另一種水性及有機溶劑之混合物萃取該等殘餘單體,留下基本上純的ROMA共聚物之溶液。在步驟150中,在過量醇存在下加熱步驟140之ROMA共聚物以充分利用下文所展示之平衡,從而降低ROMA共聚物之羧酸部分之濃度以降低共聚物溶解度且因此降低其於鹼水溶液中之溶解速率(DR),因此形成上述(DRM)ROMA共聚物。在步驟160中,純化(DRM)ROMA共聚物且通常藉由溶劑交換法轉移至合適鑄造溶劑中。在步驟170中,添加諸如合適PAC及合適交聯化合物之添加劑以形成可用的(DRM)ROMA共聚物組成物。 Referring now to Figure 1, a general process flow suitable for forming the (DRM) ROMA copolymer is provided. Specifically, step 100 is a polymerization of a norbornene-type monomer and maleic anhydride in a suitable polymerization solvent to form the above COMA copolymer. In step 110, the solution of the COMA copolymer is first treated with a mixture of strong bases to ring the anhydride ring to an alcohol (e.g., methanol or butanol) to form a ROMA copolymer having a monoester and a salt moiety. The ROMA copolymer is then treated with an acid such as formic acid or aqueous hydrochloric acid in step 120 to partially convert the carboxylate to its acid form. In step 130, the ROMA copolymer of step 120 is washed with a suitable mixture of aqueous and organic solvents to remove any remaining inorganics, leaving the copolymer and any aqueous insoluble residual monomers in the organic phase. The residual monomers are then extracted in step 140 with another aqueous and organic solvent mixture leaving a substantially pure solution of the ROMA copolymer. In step 150, the ROMA copolymer of step 140 is heated in the presence of an excess of alcohol to take advantage of the equilibrium shown below to reduce the concentration of the carboxylic acid moiety of the ROMA copolymer to reduce the solubility of the copolymer and thereby reduce it in an aqueous alkali solution. The dissolution rate (DR), thus forming the above (DRM) ROMA copolymer. In step 160, the (DRM) ROMA copolymer is purified and typically transferred to a suitable casting solvent by solvent exchange. In step 170, an additive such as a suitable PAC and a suitable crosslinking compound is added to form a useful (DRM) ROMA copolymer composition.
此外,該等實施例說明形成本發明之共聚物組成物具體實例且論述對本發明之該等共聚物、共聚物組成物及薄膜具體實例進行之用於特性該等具體實例之各種評估。 Moreover, the examples illustrate specific examples of forming copolymer compositions of the present invention and discuss various evaluations of such specific examples of properties for the copolymers, copolymer compositions, and film embodiments of the present invention.
關於特性測試,使用聚苯乙烯標準藉由凝膠滲透層析(GPC)測定分子量(Mw及Mn)。其中使用氣相層析。 For the property test, the molecular weights (Mw and Mn) were determined by gel permeation chromatography (GPC) using polystyrene standards. Among them, gas chromatography is used.
實施例A1至A5說明形成來自於降冰片烯型單體及順丁烯二酸酐單體之共聚物的例示性方法。 Examples A1 through A5 illustrate exemplary methods of forming copolymers from norbornene-type monomers and maleic anhydride monomers.
實施例A1:合成MA/NB聚合物Example A1: Synthesis of MA/NB polymer
順丁烯二酸酐(MA,7.4g,75.0mmol)、2-降冰片烯(NB,7.1g,75.0mmol)及AIBN(1.2g,7.5mmol)溶解於THF(20.4g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至70℃。混合物在70℃下攪拌5.0小時,此後將溶液冷卻至室溫。接著反應混合物用20g THF稀釋且添加至己烷(1L)中得到白色粉末,過濾且在真空烘箱中於80℃下乾燥16小時。分離得到約13.0g(90%)MA/NB聚合物(GPC Mw=4,100,Mn=1,800)。 Maleic anhydride (MA, 7.4 g, 75.0 mmol), 2-norbornene (NB, 7.1 g, 75.0 mmol) and AIBN (1.2 g, 7.5 mmol) were dissolved in THF (20.4 g) and charged appropriately Size in the reaction vessel. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 70 °C. The mixture was stirred at 70 ° C for 5.0 hours, after which time the solution was cooled to room temperature. The reaction mixture was then diluted with EtOAc (20 mL) and EtOAc (EtOAc)EtOAc. About 13.0 g (90%) of MA/NB polymer (GPC Mw = 4,100, Mn = 1,800) was isolated.
實施例A2:合成MA/BuNB聚合物Example A2: Synthesis of MA/BuNB Polymer
順丁烯二酸酐(MA,9.8g,100mmol)、5-丁基-2-降冰片烯 (BuNB,15.0g,100mmol)及AIBN(1.64g,10.0mmol)溶解於THF(37.2g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至70℃。混合物在70℃下攪拌16小時,此後將溶液冷卻至室溫。接著將反應混合物添加至己烷(2L)中得到白色粉末,過濾且在真空烘箱中於80℃下乾燥1小時。分離得到約19.3g(78%)MA/BuNB聚合物(GPC Mw=3,200,Mn=1,900)。 Maleic anhydride (MA, 9.8 g, 100 mmol), 5-butyl-2-norbornene (BuNB, 15.0 g, 100 mmol) and AIBN (1.64 g, 10.0 mmol) were dissolved in THF (37.2 g) and placed in a reaction vessel of appropriate size. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 70 °C. The mixture was stirred at 70 ° C for 16 hours, after which time the solution was cooled to room temperature. The reaction mixture was then added to hexane (2 L) to afford a white powder, which was filtered and dried in a vacuum oven at <RTIgt; About 19.3 g (78%) of MA/BuNB polymer (GPC Mw = 3,200, Mn = 1,900) was isolated.
實施例A3:合成MA/NB/BuNB聚合物Example A3: Synthesis of MA/NB/BuNB Polymer
順丁烯二酸酐(MA,7.4g,75.0mmol)、2-降冰片烯(NB,3.5g,37.5mmol)、5-丁基-2-降冰片烯(BuNB,5.6g,37.5mmol)及AIBN(1.2g,7.5mmol)溶解於THF(23.6g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至70℃。混合物在70℃下攪拌20.5小時,此後將溶液冷卻至室溫。反應混合物用20g THF稀釋且添加至己烷(1L)中得到白色粉末,過濾且在真空烘箱中於80℃下乾燥16小時。分離得到約14.5g(88%)MA/NB/BuNB聚合物(GPC Mw=3,500,Mn=1,700)。 Maleic anhydride (MA, 7.4 g, 75.0 mmol), 2-norbornene (NB, 3.5 g, 37.5 mmol), 5-butyl-2-norbornene (BuNB, 5.6 g, 37.5 mmol) and AIBN (1.2 g, 7.5 mmol) was dissolved in THF (23.6 g) and placed in a suitably sized reaction vessel. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 70 °C. The mixture was stirred at 70 ° C for 20.5 hours, after which time the solution was cooled to room temperature. The reaction mixture was diluted with 20 g of THF and added to hexane (1L) to afford white powder, which was filtered and dried in a vacuum oven at 80 ° C for 16 hours. About 14.5 g (88%) of MA/NB/BuNB polymer (GPC Mw = 3,500, Mn = 1,700) was isolated.
實施例A4:合成MA/HxNB/NBCExample A4: Synthetic MA/HxNB/NBC 44 FF 99 聚合物polymer
順丁烯二酸酐(MA,7.4g,75.0mmol)、5-己基-2-降冰片烯(HxNB,10.7g,60.0mmol)、5-全氟丁基-2-降冰片烯(NBC4F9,4.7g,15.0mmol)及AIBN(1.23g,7.5mmol)溶解於THF(30.4g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至70℃。混合物在70℃下攪拌20.5小時,此後將溶液冷卻至室溫。將反應混合物添加至己烷(1L)中得到白色粉末,過濾且在真空烘箱中於80℃下乾燥16小時。分離得到約14.3g(66%)MA/HxNB/NBC4F9聚合物(GPC Mw=3,200,Mn=2,000)。 Maleic anhydride (MA, 7.4 g, 75.0 mmol), 5-hexyl-2-norbornene (HxNB, 10.7 g, 60.0 mmol), 5-perfluorobutyl-2-norbornene (NBC 4 F) 9 , 4.7 g, 15.0 mmol) and AIBN (1.23 g, 7.5 mmol) were dissolved in THF (30.4 g) and placed in a reaction vessel of appropriate size. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 70 °C. The mixture was stirred at 70 ° C for 20.5 hours, after which time the solution was cooled to room temperature. The reaction mixture was added to hexane (1 L) to give a white powder, which was filtered and dried in a vacuum oven at <RTIgt; About 14.3 g (66%) of MA/HxNB/NBC 4 F 9 polymer (GPC Mw = 3,200, Mn = 2,000) was isolated.
實施例A5:合成MA/PENB聚合物Example A5: Synthesis of MA/PENB polymer
順丁烯二酸酐(MA,7.4g,75.0mmol)、苯基乙基降冰片烯(PENB,14.9g,75.0mmol)及AIBN(1.2g,7.5mmol)溶解於THF(32.1g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至70℃。混合物在70℃下攪拌17.5小時,此後將溶液冷卻至室溫。反應混合物用30g THF稀釋且添加至己烷(1L)中得到白色粉末,過濾且在真空烘箱中於80℃下乾燥16小時。分離得到約16.7g(75%)MA/PENB聚合物(GPC Mw=3,400,Mn=1,500)。 Maleic anhydride (MA, 7.4 g, 75.0 mmol), phenylethylnorbornene (PENB, 14.9 g, 75.0 mmol) and AIBN (1.2 g, 7.5 mmol) were dissolved in THF (32.1 g) and loaded. Into a suitably sized reaction vessel. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 70 °C. The mixture was stirred at 70 ° C for 17.5 hours, after which time the solution was cooled to room temperature. The reaction mixture was diluted with 30 g of THF and added to hexane (1L) to afford white powder, which was filtered and dried in a vacuum oven at 80 ° C for 16 hours. About 16.7 g (75%) of MA/PENB polymer (GPC Mw = 3,400, Mn = 1,500) was isolated.
實施例B1至B5分別說明用BuOH使實施例A1至A5之COMA共聚物中之順丁烯二酸酐重複單元開環之方法。實施例B6及B7說明形成MA及PENB之COMA共聚物以及用BuOH使COMA共聚物中之順丁烯二酸酐重複單元開環之方法。實施例B8至B12說明用不同醇使實施例A1之COMA共聚物開環之方法。實施例B13及B14說明形成MA及PENB之COMA共聚物以及用MeOH使COMA共聚物中之順丁烯二酸酐重複單元開環之方法。實施例B15說明首先形成COMA共聚物,使該共聚物開環以形成ROMA共聚物且接著進行該ROMA共聚物之溶解速率改良之方法。實施例15與圖1中描繪之過程一致。 Examples B1 to B5 respectively illustrate the method of ring-opening the maleic anhydride repeating unit in the COMA copolymers of Examples A1 to A5 with BuOH. Examples B6 and B7 illustrate the formation of a COMA copolymer of MA and PENB and a method of unblocking the maleic anhydride repeating unit in the COMA copolymer with BuOH. Examples B8 through B12 illustrate the method of ring opening the COMA copolymer of Example A1 with a different alcohol. Examples B13 and B14 illustrate the formation of a COMA copolymer of MA and PENB and a method of ring opening a maleic anhydride repeating unit in a COMA copolymer with MeOH. Example B15 illustrates a method in which a COMA copolymer is first formed, the copolymer is opened to form a ROMA copolymer, and then the dissolution rate of the ROMA copolymer is improved. Embodiment 15 is consistent with the process depicted in FIG.
實施例B1:MA/NB與BuOH之ROMA共聚物Example B1: ROMA copolymer of MA/NB and BuOH
將NaOH(2.3g,57.3mmol)、BuOH(19.3g,260mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌1小時且接著添加含實施例1中所得聚合物(10.0g)之20g THF。在70℃下反應3 小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約10.1g(73%)MA/NB與BuOH之ROMA聚合物(GPC Mw=4,400,Mn=2,400)。 NaOH (2.3 g, 57.3 mmol), BuOH (19.3 g, 260 mmol) and THF (20.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 1 hour and then 20 g of THF containing the polymer obtained in Example 1 (10.0 g) was added. Reaction at 70 ° C 3 After the hour, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. About 10.1 g (73%) of ROMA polymer of MA/NB and BuOH (GPC Mw = 4,400, Mn = 2,400) was isolated.
實施例B2:MA/BuNB與BuOH之ROMA共聚物Example B2: ROMA copolymer of MA/BuNB and BuOH
將NaOH(0.9g,22.3mmol)、BuOH(7.5g,100.6mmol)及THF(15.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌1小時且接著添加含實施例2中所得聚合物(5.0g)之7.5g THF。在70℃下反應3小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約4.7g(72%)MA/BuNB與BuOH之開環聚合物(GPC Mw=3,800,Mn=2,300)。 NaOH (0.9 g, 22.3 mmol), BuOH (7.5 g, 100.6 mmol) and THF (15.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 1 hour and then 7.5 g of THF containing the polymer obtained in Example 2 (5.0 g) was added. After reacting at 70 ° C for 3 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 4.7 g (72%) of a ring-opening polymer of MA/BuNB and BuOH (GPC Mw = 3,800, Mn = 2,300) was isolated.
實施例B3:MA/NB/BuNB與BuOH之ROMA共聚物Example B3: ROMA copolymer of MA/NB/BuNB and BuOH
將NaOH(2.00g,50.0mmol)、BuOH(16.82g,227mmol)及THF(15.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌1小時且接著添加含實施例3中所得聚合物(10.0g)之15.0g THF。在70℃下反應3小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中 濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約10.2g(76%)MA/NB/BuNB與BuOH之開環聚合物(GPC Mw=3,800,Mn=2,200)。 NaOH (2.00 g, 50.0 mmol), BuOH (16.82 g, 227 mmol) and THF (15.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 1 hour and then 15.0 g of THF containing the polymer obtained in Example 3 (10.0 g) was added. After reacting at 70 ° C for 3 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. Separating the organic phase and then in a vacuum It was concentrated, redissolved in THF to form about 20 wt% of a copolymer solution and then the copolymer was precipitated by adding a THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. About 10.2 g (76%) of a ring-opening polymer of MA/NB/BuNB and BuOH (GPC Mw = 3,800, Mn = 2,200) was isolated.
實施例B4:MA/HxNB/NBCExample B4: MA/HxNB/NBC 44 FF 99 與BuOH之ROMA共聚物ROMA copolymer with BuOH
將NaOH(1.45g,36.3mmol)、BuOH(12.22g,165mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌1小時且接著添加含實施例4中所得聚合物(10.00g)之15.0g THF。在70℃下反應3小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約7.2g(58%)MA/HxNB/NBC4F9與BuOH之開環聚合物(GPC Mw=3,700,Mn=2,400)。 NaOH (1.45 g, 36.3 mmol), BuOH (12.22 g, 165 mmol) and THF (20.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 1 hour and then 15.0 g of THF containing the polymer obtained in Example 4 (10.00 g) was added. After reacting at 70 ° C for 3 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 7.2 g (58%) of a ring-opening polymer of MA/HxNB/NBC 4 F 9 and BuOH (GPC Mw = 3,700, Mn = 2,400) was isolated.
實施例B5:MA/PENB與BuOH之ROMA共聚物Example B5: ROMA copolymer of MA/PENB and BuOH
將NaOH(0.7g,18.5mmol)、BuOH(3.7g,50.7mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌1小時且接著添加含實施例5中所得聚合物(5.0g)之20.0g THF。在70℃下反應3小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中 於80℃下乾燥16小時。分離得到約4.7g(75%)MA/PENB與BuOH之開環聚合物(GPC Mw=3,500,Mn=2,200)。 NaOH (0.7 g, 18.5 mmol), BuOH (3.7 g, 50.7 mmol) and THF (20.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 1 hour and then 20.0 g of THF containing the polymer obtained in Example 5 (5.0 g) was added. After reacting at 70 ° C for 3 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). Separating the copolymer by filtration and in a vacuum oven Dry at 80 ° C for 16 hours. Approximately 4.7 g (75%) of a ring-opening polymer of MA/PENB and BuOH (GPC Mw = 3,500, Mn = 2,200) was isolated.
實施例B6:MA/PENB與BuOH之ROMA共聚物Example B6: ROMA copolymer of MA/PENB and BuOH
順丁烯二酸酐(MA,19.6g,200.0mmol)、苯基乙基降冰片烯(PENB,39.6g,200.0mmol)及AIBN(3.3g,20.0mmol)溶解於THF(36.2g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至60℃。混合物在60℃下攪拌23小時,此後溶液用181.3g THF稀釋至20wt%。將所得溶液添加至NaOH(8.8g,220mmol)、BuOH(74.0g,1mol)及THF(80.0g)之懸浮液中,在70℃下混合1小時。混合物在70℃下攪拌2小時且接著冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約44.4g(75%)MA/PENB與BuOH之ROMA共聚物(GPC Mw=7,700,Mn=4,000)。 Maleic anhydride (MA, 19.6 g, 200.0 mmol), phenylethylnorbornene (PENB, 39.6 g, 200.0 mmol) and AIBN (3.3 g, 20.0 mmol) were dissolved in THF (36.2 g) and loaded Into a suitably sized reaction vessel. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 60 °C. The mixture was stirred at 60 ° C for 23 hours, after which time the solution was diluted to 20 wt% with 181.3 g of THF. The obtained solution was added to a suspension of NaOH (8.8 g, 220 mmol), BuOH (74.0 g, 1 mol) and THF (80.0 g), and the mixture was mixed at 70 ° C for 1 hour. The mixture was stirred at 70 ° C for 2 hours and then cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 44.4 g (75%) of a ROMA copolymer of MA/PENB and BuOH (GPC Mw = 7,700, Mn = 4,000) was isolated.
實施例B7:MA/PENB與BuOH之ROMA共聚物Example B7: ROMA copolymer of MA/PENB and BuOH
順丁烯二酸酐(MA,19.6g,200.0mmol)、苯基乙基降冰片烯(PENB,39.6g,200.0mmol)及AIBN(3.3g,20.0mmol)溶解於EtOAc(36.2g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至60℃。在60℃下攪拌混合物20小時。在真空中濃縮反應混合物且再溶解於THF中(20wt%)。將所得溶液添加至NaOH(8.80g,220mmol)、BuOH(74.12g,1mol)及THF(74.12g)之懸浮液中,在70℃下 混合1小時。混合物在70℃下攪拌2小時且接著冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約37.5g(51%)MA/PENB與BuOH之ROMA共聚物(GPC Mw=9,900,Mn=5,400)。 Maleic anhydride (MA, 19.6 g, 200.0 mmol), phenylethylnorbornene (PENB, 39.6 g, 200.0 mmol) and AIBN (3.3 g, 20.0 mmol) were dissolved in EtOAc (36.2 g) Into a suitably sized reaction vessel. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 60 °C. The mixture was stirred at 60 ° C for 20 hours. The reaction mixture was concentrated in vacuo and redissolved in THF (20 wt%). The resulting solution was added to a suspension of NaOH (8.80 g, 220 mmol), BuOH (74.12 g, 1 mol) and THF (74.12 g) at 70 ° C Mix for 1 hour. The mixture was stirred at 70 ° C for 2 hours and then cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 37.5 g (51%) of a ROMA copolymer of MA/PENB and BuOH (GPC Mw = 9,900, Mn = 5,400) was isolated.
實施例B8:MA/NB與第三丁醇之ROMA共聚物Example B8: ROMA copolymer of MA/NB and third butanol
將NaOH(1.1g,28.5mmol)、t-BuOH(5.8g,77.8mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌3小時且接著添加含藉由與實施例1中相同之方法獲得之聚合物(5.0g)之20.0gTHF。在70℃下反應16小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約4.5g(65%)MA/NB與t-BuOH之開環聚合物(GPC Mw=3,000,Mn=1,500)。 NaOH (1.1 g, 28.5 mmol), t-BuOH (5.8 g, 77.8 mmol) and THF (20.0 g) were placed in a reaction vessel of the appropriate size. The mixture was stirred at 70 ° C for 3 hours and then 20.0 g of THF containing the polymer (5.0 g) obtained by the same method as in Example 1 was added. After reacting at 70 ° C for 16 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. About 4.5 g (65%) of a ring-opening polymer of MA/NB and t-BuOH (GPC Mw = 3,000, Mn = 1,500) was isolated.
實施例B9:MA/NB與2-甲基-2-金剛烷醇之ROMA共聚物Example B9: ROMA copolymer of MA/NB and 2-methyl-2-adamantanol
將NaOH(1.1g,28.5mmol)、2-甲基-2-金剛烷醇(8.7g,52.0mmol)及THF(40.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌3小時且接著添加含實施例1中所得聚合物(5.0g)之20.0g THF。在70℃下反應16小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真 空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約5.31g(57%)MA/NB與2-甲基-2-金剛烷醇之開環聚合物(GPC Mw=3,000,Mn=1,500)。 NaOH (1.1 g, 28.5 mmol), 2-methyl-2-adamantanol (8.7 g, 52.0 mmol) and THF (40.0 g) were placed in a reaction vessel of appropriate size. The mixture was stirred at 70 ° C for 3 hours and then 20.0 g of THF containing the polymer obtained in Example 1 (5.0 g) was added. After reacting at 70 ° C for 16 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. Separating the organic phase and then in the true It was concentrated in the air, redissolved in THF to form about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. A ring-opening polymer (GPC Mw = 3,000, Mn = 1,500) of about 5.31 g (57%) of MA/NB and 2-methyl-2-adamantanol was isolated.
實施例B10:MA/NB與2,2,3,3,4,4,4-七氟-1-丁醇之ROMA共聚物Example B10: ROMA copolymer of MA/NB and 2,2,3,3,4,4,4-heptafluoro-1-butanol
將NaOH(1.1g,28.5mmol)、2,2,3,3,4,4,4-七氟-1-丁醇(7.8g,39.0mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌3小時且接著添加含實施例1中所得聚合物(5.0g)之20.0g THF。在70℃下反應16小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約5.1g(50%)MA/NB與BuOH之開環聚合物(GPC Mw=3,600,Mn=1,900)。 NaOH (1.1 g, 28.5 mmol), 2,2,3,3,4,4,4-heptafluoro-1-butanol (7.8 g, 39.0 mmol) and THF (20.0 g) were charged to the appropriate size. In the container. The mixture was stirred at 70 ° C for 3 hours and then 20.0 g of THF containing the polymer obtained in Example 1 (5.0 g) was added. After reacting at 70 ° C for 16 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. About 5.1 g (50%) of a ring-opening polymer of MA/NB and BuOH (GPC Mw = 3,600, Mn = 1,900) was isolated.
實施例B11:MA/NB與4-第三丁基環己醇之ROMA共聚物Example B11: ROMA copolymer of MA/NB and 4-tert-butylcyclohexanol
將NaOH(1.1g,28.5mmol)、4-第三丁基環己醇(12.2g,78.1mmol)及THF(20.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌3小時且接著添加含實施例1中所得聚合物(5.0g)之20.0g THF。在70℃下反應16小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物 且在真空烘箱中於80℃下乾燥16小時。分離得到約5.2g(58%)MA/NB與4-第三丁基環己醇之開環聚合物(GPC Mw=3,300,Mn=1,600)。 NaOH (1.1 g, 28.5 mmol), 4-t-butylcyclohexanol (12.2 g, 78.1 mmol) and THF (20.0 g) were placed in a reaction vessel of appropriate size. The mixture was stirred at 70 ° C for 3 hours and then 20.0 g of THF containing the polymer obtained in Example 1 (5.0 g) was added. After reacting at 70 ° C for 16 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). Separation of the copolymer by filtration It was dried in a vacuum oven at 80 ° C for 16 hours. Approximately 5.2 g (58%) of a ring-opening polymer of MA/NB and 4-tert-butylcyclohexanol (GPC Mw = 3,300, Mn = 1,600) was isolated.
實施例B12:MA/NB與4-第三丁基苯酚之ROMA共聚物Example B12: ROMA copolymer of MA/NB and 4-tert-butylphenol
將NaOH(1.1g,28.5mmol)、4-第三丁基苯酚(7.8g,52.0mmol)及THF(15.0g)裝入適當尺寸之反應容器中。混合物在70℃下攪拌3小時且接著添加含實施例1中所得聚合物(5.0g)之7.5g THF。在70℃下反應16小時後,混合物冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wr%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約5.4g(61%)MA/NB與4-第三丁基苯酚之開環聚合物(GPC Mw=3,400,Mn=1,800)。 NaOH (1.1 g, 28.5 mmol), 4-tert-butylphenol (7.8 g, 52.0 mmol) and THF (15.0 g) were placed in a reaction vessel of appropriate size. The mixture was stirred at 70 ° C for 3 hours and then 7.5 g of THF containing the polymer obtained in Example 1 (5.0 g) was added. After reacting at 70 ° C for 16 hours, the mixture was cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford a <RTI ID=0.0>> The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 5.4 g (61%) of a ring-opening polymer of MA/NB and 4-tert-butylphenol (GPC Mw = 3,400, Mn = 1,800) was isolated.
實施例B13:MA/PENB與MeOH之ROMA共聚物Example B13: ROMA copolymer of MA/PENB and MeOH
順丁烯二酸酐(MA,14.7g,150mmol)、苯基乙基降冰片烯(PENB,29.7g,150mmol)及AIBN(2.5g,15.0mmol)溶解於THF(27.1g)中且裝入反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至60℃。混合物在60℃下攪拌24小時,此後溶液用148.04g THF稀釋至20wt%。將所得溶液添加至NaOH(6.6g,165mmol)、MeOH(24.0g,750mmol)及THF(24.0g)之懸浮液中,在70℃下混合1小時。混合物在70℃下攪拌3小時且接著冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己 烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約28.7g(58%)MA/PENB與MeOH之開環聚合物(GPC Mw=6,400,Mn=3,500)。 Maleic anhydride (MA, 14.7 g, 150 mmol), phenylethylnorbornene (PENB, 29.7 g, 150 mmol) and AIBN (2.5 g, 15.0 mmol) were dissolved in THF (27.1 g) and charged. In the container. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 60 °C. The mixture was stirred at 60 ° C for 24 hours, after which time the solution was diluted with 148.04 g of THF to 20 wt%. The resulting solution was added to a suspension of NaOH (6.6 g, 165 mmol), MeOH (24.0 g, 750 mmol) and THF (24.0 g), and the mixture was stirred at 70 ° C for 1 hour. The mixture was stirred at 70 ° C for 3 hours and then cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase is separated and then concentrated in vacuo, redissolved in THF to form about 20 wt% copolymer solution and then added to the THF solution The copolymer was precipitated in an alkane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 28.7 g (58%) of a ring-opening polymer of MA/PENB and MeOH (GPC Mw = 6,400, Mn = 3,500) was isolated.
實施例B14:MA/PENB與MeOH之ROMA共聚物Example B14: ROMA copolymer of MA/PENB and MeOH
順丁烯二酸酐(MA,14.7g,150mmol)、苯基乙基降冰片烯(PENB,29.7g,150mmol)及AIBN(2.5g,15.0mmol)溶解於EtOAc(27.1g)中且裝入反應容器中。溶液用氮充氣10分鐘以移除氧且接著加熱至60℃。在60℃下攪拌混合物24小時。在真空中濃縮反應混合物且再溶解於THF中(20wt%)。將所得溶液添加至NaOH(6.6g,165mmol)、MeOH(24.0g,750mmol)及THF(24.0g)之懸浮液中,在70℃下混合1小時。混合物在70℃下攪拌3小時且接著冷卻至室溫。反應混合物用濃鹽酸水溶液處理以進行質子化,且接著洗滌3次以移除殘餘鹽及酸。分離有機相且接著在真空中濃縮,再溶解於THF中以形成約20wt%共聚物溶液且接著藉由將THF溶液添加至己烷(20倍過量)中使共聚物沈澱。藉由過濾分離共聚物且在真空烘箱中於80℃下乾燥16小時。分離得到約30.4g(61%)MA/PENB與MeOH之開環聚合物(GPC Mw=9,700,Mn=5,300)。 Maleic anhydride (MA, 14.7 g, 150 mmol), phenylethylnorbornene (PENB, 29.7 g, 150 mmol) and AIBN (2.5 g, 15.0 mmol) were dissolved in EtOAc (27.1 g) and charged. In the container. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 60 °C. The mixture was stirred at 60 ° C for 24 hours. The reaction mixture was concentrated in vacuo and redissolved in THF (20 wt%). The resulting solution was added to a suspension of NaOH (6.6 g, 165 mmol), MeOH (24.0 g, 750 mmol) and THF (24.0 g), and the mixture was stirred at 70 ° C for 1 hour. The mixture was stirred at 70 ° C for 3 hours and then cooled to room temperature. The reaction mixture was treated with concentrated aqueous hydrochloric acid to carry out protonation, and then washed 3 times to remove residual salts and acids. The organic phase was separated and then concentrated in vacuo, redissolved in THF to afford about 20 wt% of the copolymer solution and then the copolymer was precipitated by adding THF solution to hexane (20-fold excess). The copolymer was isolated by filtration and dried in a vacuum oven at 80 ° C for 16 hours. Approximately 30.4 g (61%) of a ring-opening polymer of MA/PENB and MeOH (GPC Mw = 9,700, Mn = 5,300) was isolated.
實施例B15:MA/NB與BuOH之(DRM)ROMA共聚物Example B15: (DRM) ROMA copolymer of MA/NB and BuOH
順丁烯二酸酐(MA,98.1g,1.0mol)、2-降冰片烯(NB,94.2g,1.0mol)及AIBN(3.3g,20.0mmol)溶解於THF(31.2g)及甲苯(93.6g)中且裝入適當尺寸之反應容器中。溶液用氮充氣10分鐘以移除氧且接著在攪拌下加熱至60℃。3小時後,添加THF(64.1g)且在第8小時添加AIBN(3.3g,20.0mmol)及THF(39.4g)且混合物在60℃下再攪拌 16小時。接著反應混合物用THF稀釋至20wt%且將所得溶液添加至NaOH(44.1g,1.1mol)、BuOH(370.9g,5.0mol)之懸浮液中且在65℃下混合3小時。接著將混合物冷卻至40℃,用濃鹽酸水溶液(126.2g,1.2mol)處理以進行質子化,且接著相繼用甲苯(384g)及水(961g)(1X)以及THF(192g)及水(961g)(3X)洗滌以移除無機殘餘物。接著分離有機相且相繼用MeOH/水/己烷混合物(1X)及MeOH/甲苯/己烷混合物(2X)洗滌以萃取任何殘餘單體。在萃取後,向反應混合物中添加BuOH(74.18g,1.0mol)及PGMEA(611g)且蒸發直至殘餘MeOH小於1%。接著將反應混合物加熱至130℃以進行溶解速率改良。獲取樣品以監測共聚物之溶解速率。冷卻反應混合物且在獲得所需溶解速率時將溶劑交換為PGMEA。獲得651.4g聚合物之20wt%溶液(GPC Mw=13,600,Mn=6,800)。 Maleic anhydride (MA, 98.1 g, 1.0 mol), 2-norbornene (NB, 94.2 g, 1.0 mol) and AIBN (3.3 g, 20.0 mmol) were dissolved in THF (31.2 g) and toluene (93.6 g). And loaded into a reaction vessel of appropriate size. The solution was aerated with nitrogen for 10 minutes to remove oxygen and then heated to 60 ° C with stirring. After 3 hours, THF (64.1 g) was added and AIBN (3.3 g, 20.0 mmol) and THF (39.4 g) were added at 8 hours and the mixture was stirred at 60 ° C 16 hours. The reaction mixture was then diluted with THF to 20 wt% and the resulting solution was added to a suspension of NaOH (44.1 g, 1.1 mol), BuOH (370.9 g, 5.0 mol) and mixed at 65 ° C for 3 hours. The mixture was then cooled to 40 ° C, treated with concentrated aqueous hydrochloric acid (126.2 g, 1.2 mol) for protonation, followed by successive use of toluene (384 g) and water (961 g) (1X) and THF (192 g) and water (961 g) (3X) Wash to remove inorganic residues. The organic phase was then separated and washed sequentially with a mixture of MeOH / water / hexane (1X) and MeOH / toluene / hexane (2X) to extract any residual monomer. After extraction, BuOH (74.18 g, 1.0 mol) and PGMEA (611 g) were added to the reaction mixture and evaporated until residual MeOH was less than 1%. The reaction mixture was then heated to 130 ° C for dissolution rate improvement. Samples were taken to monitor the dissolution rate of the copolymer. The reaction mixture was cooled and the solvent was exchanged for PGMEA when the desired dissolution rate was obtained. A 20 wt% solution of 651.4 g of polymer (GPC Mw = 13,600, Mn = 6,800) was obtained.
儘管上述程序包括溶解速率改良步驟,但應瞭解,該過程可在無醇及添加醇之環境下完成。為達成此目的,ROMA NB/MA-BuOH於PGMEA中之20wt%聚合物溶液在125℃下加熱3小時,用Nicolet Avatar320 FT-IR光譜儀獲得初始樣品及加熱3小時後之樣品的紅外光譜且部分紅外光譜分別提供於圖2a及2b中。此外,另一份不同ROMA NB/MA-BuOH於PGMEA中之20wt%聚合物溶液於125℃下在BuOH存在下加熱3小時。用Nicolet Avatar320 FT-IR光譜儀獲得初始樣品及加熱3小時後之樣品的紅外光譜且部分紅外光譜分別提供於圖2c及2d中。 Although the above procedure includes a dissolution rate improving step, it should be understood that the process can be carried out in the absence of alcohol and addition of alcohol. To achieve this, the 20 wt% polymer solution of ROMA NB/MA-BuOH in PGMEA was heated at 125 ° C for 3 hours, and the infrared spectrum of the initial sample and the sample after heating for 3 hours was obtained with a Nicolet Avatar 320 FT-IR spectrometer and partially Infrared spectra are provided in Figures 2a and 2b, respectively. In addition, another 20 wt% polymer solution of different ROMA NB/MA-BuOH in PGMEA was heated at 125 ° C for 3 hours in the presence of BuOH. The infrared spectrum of the initial sample and the sample after heating for 3 hours was obtained with a Nicolet Avatar 320 FT-IR spectrometer and partial infrared spectra were provided in Figures 2c and 2d, respectively.
首先參考圖2a及2b,可發現初始樣品之光譜(圖2a)與加熱3小時後之樣品之光譜(圖2b)之間表示MA環結構之羰基伸展頻率的兩個峰『A』顯著增加。此外,發現兩個譜圖之間表示丁基酯羰基之羰基伸 展頻率的峰『B』及肩(Shoulder)『C』之強度降低。因此,咸信該等譜圖表明在無任何添加之醇情況下加熱具有BuOH開環順丁烯二酸酐型重複單元之共聚物可引起該等重複單元之一些部分閉環且該閉環作用降低可用於提供聚合物於鹼水溶液中之溶解度的羧酸量。 Referring first to Figures 2a and 2b, it can be seen that there is a significant increase in the two peaks "A" between the spectrum of the initial sample (Figure 2a) and the spectrum of the sample after heating for 3 hours (Figure 2b) indicating the frequency of carbonyl stretching of the MA ring structure. In addition, it was found that the carbonyl extension of the butyl ester carbonyl group between the two spectra was found. The intensity of the peak "B" and the shoulder "C" of the exhibition frequency is reduced. Therefore, the spectra indicate that heating a copolymer having a repeating unit of BuOH ring-opening maleic anhydride type without any added alcohol can cause some partial ring closure of the repeating units and the reduction in ring closure can be used for The amount of carboxylic acid providing the solubility of the polymer in an aqueous base solution.
現參考圖2c及2d,可發現初始樣品之光譜(圖2c)與加熱3小時後之樣品之光譜(圖2d)之間表示MA環結構之羰基伸展頻率的兩個峰『A』僅輕微增加。此外,發現兩個譜圖之間表示丁基酯羰基之羰基伸展頻率的峰『B』基本上保持恆定而肩『C』之強度降低。因此,咸信該等譜圖表明在存在添加之醇情況下加熱具有BuOH開環順丁烯二酸酐型重複單元之共聚物可引起該等重複單元之一些部分閉環且該等重複單元之其他部分變為二酯。因為閉環及二酯形成均降低可用於提供聚合物於鹼水溶液中之溶解度的羧酸量,因此該初始共聚物之溶解速率降低。 Referring now to Figures 2c and 2d, it can be seen that the two peaks "A" representing the carbonyl stretching frequency of the MA ring structure are only slightly increased between the spectrum of the initial sample (Fig. 2c) and the spectrum of the sample after heating for 3 hours (Fig. 2d). . Further, it was found that the peak "B" indicating the frequency of stretching of the carbonyl group of the butyl ester carbonyl group between the two spectra was substantially kept constant and the strength of the shoulder "C" was lowered. Therefore, the spectrum indicates that heating a copolymer having a repeating unit of a BuOH ring-opening maleic anhydride type in the presence of an added alcohol may cause some partial ring closure of the repeating units and other portions of the repeating units Become a diester. Since both the ring closure and the diester formation reduce the amount of carboxylic acid available to provide the solubility of the polymer in the aqueous base solution, the dissolution rate of the initial copolymer is reduced.
現參考圖3,其圖示表示溶解速率改良步驟在添加或不添加醇部分(例如苯甲醇)情況下引起初始ROMA共聚物之溶解速率降低。因此,咸信圖3中展示之結果進一步表明該步驟必須降低羧酸部分之可用性,上文中已由閉環或二酯化或其兩者表示。 Referring now to Figure 3, there is shown a dissolution rate modification step which causes a decrease in the dissolution rate of the initial ROMA copolymer with or without the addition of an alcohol moiety such as benzyl alcohol. Thus, the results presented in Figure 3 further indicate that this step must reduce the availability of the carboxylic acid moiety, which has been indicated by ring closure or diesterification or both.
來自實施例B1至B12及B15中之每一者之聚合物溶解於PGMEA中以形成25wt%聚合物溶液。將各溶液旋塗於3吋矽晶圓上且在110℃下軟烘烤100秒得到厚度為約3μm之聚合物薄膜。藉由將晶圓浸沒於0.4% TMAH顯影劑溶液中來進行顯影。藉由量測聚合物薄膜變為視覺上透明所需之時間來測定各薄膜之溶解速率(展示於下文中)。 The polymer from each of Examples B1 to B12 and B15 was dissolved in PGMEA to form a 25 wt% polymer solution. Each solution was spin-coated on a 3 Å wafer and soft baked at 110 ° C for 100 seconds to obtain a polymer film having a thickness of about 3 μm. Development was carried out by immersing the wafer in a 0.4% TMAH developer solution. The dissolution rate of each film was determined by measuring the time required for the polymer film to become visually transparent (shown below).
將聚合物B1至B15之溶液塗覆於如上文所描述之玻璃晶圓上得到厚度為3μm之層。在空氣中在250℃/30min下熱處理之前及之後量測400nm下之透明度。在處理之前,各薄膜之透明度為至少98%,而在熱處理後,實施例B2、B3及B4之聚合物、所有具有烷基NB重複單元之聚合物之透明度顯著降低。B2及B4分別降低至37%及40%且B3降低至78%。對於其他實施例,僅實施例B13及B14展示透明度%降低至多10%。 A solution of polymers B1 to B15 was applied to a glass wafer as described above to obtain a layer having a thickness of 3 μm. The transparency at 400 nm was measured before and after heat treatment at 250 ° C / 30 min in air. The transparency of each film was at least 98% prior to treatment, and the transparency of the polymers of Examples B2, B3 and B4, all of the polymers having alkyl NB repeating units was significantly reduced after heat treatment. B2 and B4 were reduced to 37% and 40%, respectively, and B3 was reduced to 78%. For the other examples, only Examples B13 and B14 exhibited a % reduction in transparency of up to 10%.
藉由經調節之DSC量測聚合物之Tg。量測條件為N2流下10℃/分鐘。各實施例B1至B6、B11及B12之共聚物之Tg均為150℃+/-10℃,而實施例B8至B10之Tg分別為183℃、186℃及177℃。 The Tg of the polymer was measured by adjusted DSC. The measurement conditions were 10 ° C / min under N 2 flow. The copolymers of Examples B1 to B6, B11 and B12 each had a Tg of 150 ° C +/- 10 ° C, while the Tg of Examples B8 to B 10 were 183 ° C, 186 ° C and 177 ° C, respectively.
a:介電常數a: dielectric constant
根據JIS-k6911(日本工業標準)之技術在1KHz、10KHz、100KHz及1MHz下量測由B1至B15之各共聚物之共聚物組成物製備之薄膜的介電常數。製備各組成物之方法提供於實施例C1a至C15a中。使用Dainippon Screen MFG有限公司之Lambda ace VM-1020量測各薄膜之膜厚度(計算介電常數所需)。 The dielectric constant of the film prepared from the copolymer composition of each of the copolymers B1 to B15 was measured at 1 kHz, 10 kHz, 100 kHz, and 1 MHz according to the technique of JIS-k6911 (Japanese Industrial Standard). A method of preparing each composition is provided in Examples C1a to C15a. The film thickness of each film (required for calculating the dielectric constant) was measured using a Lambda ace VM-1020 from Dainippon Screen MFG Co., Ltd.
實施例C1a:來自實施例B1之聚合物與TrisP 3M6C-2-201(25%於聚合物上,來自Toyo Gosei)及TMPTGE(20%於聚合物上)一起溶解於PGMEA/EL(4/3,16wt%)中。將調配物以300rpm旋塗於鋁板(200μm厚度,100mm×100mm)上持續23秒,在110℃下軟烘烤100秒得到約3微米之聚合物薄膜,接著使用具有寬頻帶Hg蒸氣光源(g、h及i頻帶)之光罩對準器在500mJ/cm2下進行曝光。在曝光後,晶圓在氮氣氛圍下於220℃下曝光後烘烤60分鐘獲得固化薄膜。 Example C1a: The polymer from Example B1 was dissolved in PGMEA/EL (4/3) together with TrisP 3M6C-2-201 (25% on polymer from Toyo Gosei) and TMPTGE (20% on polymer). , 16wt%). The formulation was spin-coated on an aluminum plate (200 μm thickness, 100 mm×100 mm) at 300 rpm for 23 seconds, and soft baked at 110 ° C for 100 seconds to obtain a polymer film of about 3 μm, followed by using a broadband Hg vapor source (g The mask aligners of the h, i and i bands were exposed at 500 mJ/cm 2 . After the exposure, the wafer was exposed to light at 220 ° C for 60 minutes under a nitrogen atmosphere to obtain a cured film.
實施例C2a:重複C1a之過程,除了使來自實施例B2之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在400rpm下持續20秒。 Example C2a: The procedure for repeating C1a except that the polymer from Example B2 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 400 rpm for 20 seconds.
實施例C3a:重複C1a之過程,除了使來自實施例B3之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20wt%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在900rpm下20秒。 Example C3a: The process of repeating C1a except that the polymer from Example B3 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20 wt% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 900 rpm for 20 seconds.
實施例C4a:重複C1a之過程,除了使來自實施例B4之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20wt%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在700rpm下持續20秒。 Example C4a: The process of repeating C1a except that the polymer from Example B4 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20 wt% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 700 rpm for 20 seconds.
實施例C5a:重複C1a之過程,除了使來自實施例B5之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及VG3101L(20wt%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3 秒,接著在800rpm下持續20秒。 Example C5a: The process of repeating C1a except that the polymer from Example B5 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and VG3101L (20 wt% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 800 rpm for 20 seconds.
實施例C6a:重複C1a之過程,除了使來自實施例B6之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及VG3101L(20wt%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒及在1300rpm下持續20秒。 Example C6a: The procedure for repeating C1a except that the polymer from Example B6 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and VG3101L (20 wt% on polymer) The spin coating conditions were at 300 rpm for 3 seconds and at 1300 rpm for 20 seconds.
實施例C7a:重複C1a之過程,除了使來自實施例B7之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及VG3101L(20wt%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在1370rpm下持續20秒。 Example C7a: The process of repeating C1a except that the polymer from Example B7 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and VG3101L (20 wt% on polymer) The spin coating conditions were continued at 300 rpm for 3 seconds, followed by 1370 rpm for 20 seconds.
實施例C8a:重複C1a之過程,除了使來自實施例B8之聚合物與Tris-P PAC(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在2000rpm下持續20秒。 Example C8a: The process of repeating C1a except that the polymer from Example B8 was dissolved in PGMEA (25 wt%) together with Tris-P PAC (25% on polymer) and TMPTGE (20% on polymer) And the spin coating conditions were continued at 300 rpm for 3 seconds, followed by 2000 rpm for 20 seconds.
實施例C9a:重複C1a之過程,除了使來自實施例B9之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA/MAK=3/1(20wt%)中且旋塗條件為在300rpm下持續3秒,接著在1500rpm下持續20秒。 Example C9a: The procedure for repeating C1a except that the polymer from Example B9 was dissolved in PGMEA/MAK with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20% on polymer). The 3/1 (20 wt%) and spin coating conditions were at 300 rpm for 3 seconds, followed by 1500 rpm for 20 seconds.
實施例C10a:重複C1a之過程,除了使來自實施例B10之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在1000rpm下持續20秒。 Example C10a: The process of repeating C1a except that the polymer from Example B10 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 1000 rpm for 20 seconds.
實施例C11a:重複C1a之過程,除了使來自實施例B10 之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在1500rpm下持續20秒。 Example C11a: The process of repeating C1a except that the polymer from Example B10 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20% on polymer) The spin coating conditions were at 300 rpm for 3 seconds and then at 1500 rpm for 20 seconds.
實施例C12a:重複C1a之過程,除了使來自實施例B10之聚合物與TrisP 3M6C-2-201(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在930rpm下持續20秒。 Example C12a: The process of repeating C1a except that the polymer from Example B10 was dissolved in PGMEA (25 wt%) together with TrisP 3M6C-2-201 (25% on polymer) and TMPTGE (20% on polymer) The spin coating conditions were at 300 rpm for 3 seconds followed by 930 rpm for 20 seconds.
實施例C13a:重複C1a之過程,除了使來自實施例B13之聚合物與Tris-P PAC(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在1520rpm下持續20秒。 Example C13a: The process of repeating C1a except that the polymer from Example B13 was dissolved in PGMEA (25 wt%) together with Tris-P PAC (25% on polymer) and TMPTGE (20% on polymer) And the spin coating conditions were at 300 rpm for 3 seconds, followed by 1520 rpm for 20 seconds.
實施例C14a:重複C1a之過程,除了使來自實施例B14之聚合物與Tris-P PAC(25%於聚合物上)及TMPTGE(20%於聚合物上)一起溶解於PGMEA(25wt%)中且旋塗條件為在300rpm下持續3秒,接著在1980rpm下持續20秒。 Example C14a: The process of repeating C1a except that the polymer from Example B14 was dissolved in PGMEA (25 wt%) together with Tris-P PAC (25% on polymer) and TMPTGE (20% on polymer) And the spin coating conditions were at 300 rpm for 3 seconds, followed by 1980 rpm for 20 seconds.
實施例C15a:重複C1a之過程,除了為來自實施例B15之聚合物溶液以及Tris-P PAC(25%於聚合物上)及VG3101L(20%於聚合物上)且旋塗條件為在300rpm下持續3秒,接著在830rpm下持續20秒。 Example C15a: The procedure for repeating C1a except for the polymer solution from Example B15 and Tris-P PAC (25% on polymer) and VG3101L (20% on polymer) and the spin coating conditions were at 300 rpm It lasted for 3 seconds and then continued at 830 rpm for 20 seconds.
除實施例C9a及C12a之薄膜外,所有薄膜之介電常數在所有頻率下均較低,在1MHz下在2.9至3.1之低值範圍內且在1KHz下在3.1至3.4之低值範圍內。儘管C9a及C12a之結果較高,但其亦呈現在3.3(1MHz)至3.7(1KHz)範圍內的想要的低介電常數值。 Except for the films of Examples C9a and C12a, the dielectric constants of all films were low at all frequencies, ranging from a low value range of 2.9 to 3.1 at 1 MHz and a low value range of 3.1 to 3.4 at 1 kHz. Although the results for C9a and C12a are higher, they also exhibit desirable low dielectric constant values in the range of 3.3 (1 MHz) to 3.7 (1 KHz).
b:固化薄膜之透明度b: transparency of cured film
使用所製備之實施例C1a、C3a、C4a、C6a及C13a至C15a中之每一者之共聚物組成物在玻璃板上製備厚度為約3μm之薄膜。在110℃下軟烘烤100秒後,使用具有寬頻帶Hg蒸氣光源(g、h及i頻帶)之光罩對準器在500mJ/cm2下對各薄膜進行曝光。在曝光後,晶圓在氮氣氛圍下於220℃下曝光後烘烤60分鐘獲得固化薄膜。塗有薄膜之玻璃板在烘箱中於250℃下在空氣中加熱30分鐘,且使用紫外線-可見光分光鏡(Hitachi U-2000)量測400nm波長下薄膜之透明度。將所得經熱處理之薄膜標記為實施例C1b、C3b、C4b、C6b及C13b至C15b,且各薄膜之透明度%提供於下文中。 A film having a thickness of about 3 μm was prepared on a glass plate using the copolymer compositions of each of the prepared Examples C1a, C3a, C4a, C6a and C13a to C15a. After soft baking at 110 ° C for 100 seconds, each film was exposed at 500 mJ/cm 2 using a mask aligner having a broadband Hg vapor source (g, h and i bands). After the exposure, the wafer was exposed to light at 220 ° C for 60 minutes under a nitrogen atmosphere to obtain a cured film. The film-coated glass plate was heated in an oven at 250 ° C for 30 minutes in the air, and the transparency of the film at a wavelength of 400 nm was measured using an ultraviolet-visible spectroscope (Hitachi U-2000). The resulting heat-treated film was labeled as Examples C1b, C3b, C4b, C6b and C13b to C15b, and the % transparency of each film is provided below.
c:5%重量損失溫度c: 5% weight loss temperature
使用所製備之實施例C1a至C4a、C6a、C7a及C12a至C15a中之每一者之共聚物組成物在塗有4吋熱氧化物之矽晶圓上製備厚度為約3μm之薄膜且進行曝光。在各薄膜固化後,自晶圓移除一部分薄膜且藉由TGDTA量測5%重量損失溫度。量測條件為N2流下10℃/分鐘。所得重量損失量測值標記為實施例C1c至C4c、C6c、C7c及C12c至C15c且提供於下文中。如所見,各薄膜之5%重量損失溫度均超過300℃且可認為熱穩定溫度高達且包括300℃。 A copolymer composition of each of the prepared Examples C1a to C4a, C6a, C7a, and C12a to C15a was used to prepare a film having a thickness of about 3 μm on a silicon oxide coated with a thermal oxide of 4 Å and exposed. . After each film was cured, a portion of the film was removed from the wafer and the 5% weight loss temperature was measured by TGDTA. The measurement conditions were 10 ° C / min under N 2 flow. The resulting weight loss measurements are labeled as Examples C1c through C4c, C6c, C7c, and C12c through C15c and are provided below. As can be seen, the 5% weight loss temperature of each film exceeded 300 ° C and the heat stable temperature was considered to be up to and including 300 ° C.
d:微影評估d: lithography evaluation
使用所製備之實施例C1a至C15a中之每一者之共聚物組成物在玻璃板上製備厚度為約3μm之薄膜。在110℃下軟烘烤100秒後,使用具有寬頻帶Hg蒸氣光源(g、h及i頻帶)之光罩對準器經玻璃遮罩上之鉻在500mJ/cm2下對各薄膜進行曝光。在曝光後,使用0.4% TMAHaq對各晶圓進行浸漬式顯影保持10秒,用去離子水洗滌,接著在2000rpm下旋轉乾燥20秒。量測各晶圓之剩餘聚合物之最終厚度以及10μm線及空間之解析度。該等評估之結果以及各晶圓之初始膜厚度(標記為實施例C1d至C15d)提供於下文中。 A film having a thickness of about 3 μm was prepared on a glass plate using the copolymer composition of each of the prepared Examples C1a to C15a. After soft baking at 110 ° C for 100 seconds, the films were exposed at 500 mJ/cm 2 through a glass mask chrome using a mask aligner with a broadband Hg vapor source (g, h and i bands). . After exposure, each wafer was subjected to immersion development using 0.4% TMAHaq for 10 seconds, washed with deionized water, followed by spin drying at 2000 rpm for 20 seconds. The final thickness of the remaining polymer of each wafer and the resolution of the line and space of 10 μm were measured. The results of these evaluations, as well as the initial film thickness of each wafer (labeled as Examples C1d to C15d) are provided below.
現參考圖4a及4b,展示實施例C15d之所形成之影像之一部分之顯微照片。在圖4a中,發現10μm線及空間清楚解析,而在圖4b 中,發現5μm線及空間亦良好解析。 Referring now to Figures 4a and 4b, a photomicrograph of a portion of the image formed in Example C15d is shown. In Figure 4a, it is found that the 10 μm line and space are clearly resolved, while in Figure 4b In the middle, it was found that the 5 μm line and space were also well resolved.
實施例C5e:藉由將實施例C5d中圖案化之晶圓切割成若干片,在烘箱中於N2下加熱該等片至220℃保持60分鐘且接著觀測經加熱之片之SEM橫截面來量測耐熱性。在220℃熱固化後,觀測圖案流動。 Example C5e: By cutting the patterned wafer in Example C5d into several pieces, heating the sheets in an oven under N 2 to 220 ° C for 60 minutes and then observing the SEM cross section of the heated sheet The heat resistance was measured. After heat curing at 220 ° C, the pattern flow was observed.
實施例C6e:藉由將實施例C6d中圖案化之晶圓切割成若干片,在N2烘箱中將該等片加熱至220℃保持60分鐘,接著觀測各經加熱之片之SEM橫截面來量測耐熱性。在熱固化後不存在圖案流動,因此表明固化聚合物薄膜至少在220℃下呈現耐熱性及穩定性。 Example C6e: By cutting the patterned wafer in Example C6d into several sheets, the sheets were heated to 220 ° C for 60 minutes in an N 2 oven, and then the SEM cross sections of the heated sheets were observed. The heat resistance was measured. There was no pattern flow after thermal curing, thus indicating that the cured polymer film exhibited heat resistance and stability at least at 220 °C.
實施例C7e:藉由將實施例C7d中圖案化之晶圓切割成若干片,在N2烘箱中將該等片加熱至220℃保持60分鐘,接著觀測各經加熱之片之SEM橫截面來量測耐熱性。在熱固化後不存在圖案流動,因此表明固化聚合物薄膜至少在220℃下呈現耐熱性及穩定性。 Example C7e: By cutting the patterned wafer in Example C7d into several sheets, the sheets were heated to 220 ° C for 60 minutes in an N 2 oven, and then the SEM cross sections of the heated sheets were observed. The heat resistance was measured. There was no pattern flow after thermal curing, thus indicating that the cured polymer film exhibited heat resistance and stability at least at 220 °C.
實施例C13e:藉由將塗有薄膜之晶圓切割成若干片,在N2烘箱中將該等片加熱至220℃保持60分鐘,接著觀測各經加熱之片之SEM橫截面來量測耐熱性。在熱固化後不存在圖案流動,因此表明固化聚合物薄膜至少在220℃下呈現耐熱性及穩定性。 Example C13e: Heat resistance was measured by cutting a film-coated wafer into a plurality of sheets, heating the sheets to 220 ° C for 60 minutes in an N 2 oven, and then observing the SEM cross sections of the heated sheets. Sex. There was no pattern flow after thermal curing, thus indicating that the cured polymer film exhibited heat resistance and stability at least at 220 °C.
實施例C14e:藉由將塗有薄膜之晶圓切割成若干片,在N2烘箱中將該等片加熱至220℃保持60分鐘,接著觀測各經加熱之片之SEM橫截面來量測耐熱性。在熱固化後不存在圖案流動,因此表明固化聚合物薄膜至少在220℃下呈現耐熱性及穩定性。 Example C14e: Heat resistance was measured by cutting a film-coated wafer into a plurality of sheets, heating the sheets to 220 ° C for 60 minutes in an N 2 oven, and then observing the SEM cross sections of the heated sheets. Sex. There was no pattern flow after thermal curing, thus indicating that the cured polymer film exhibited heat resistance and stability at least at 220 °C.
g:NMP耐受性g: NMP tolerance
實施例C6g:在300rpm下持續3秒接著在1300rpm下持續20秒將實施例C6a中之調配物旋塗於3吋熱氧化物矽晶圓上,在110℃下軟烘烤100秒得到約2.3微米之聚合物薄膜,接著使用具有寬頻帶Hg蒸氣光源(g、h及i頻帶)之光罩對準器在500mJ/cm2下進行曝光。在曝光後,晶圓在氮氣氛圍下於220℃下曝光後烘烤60分鐘獲得固化薄膜。晶圓在40℃下於NMP中浸泡10分鐘且接著量測膜厚度。膜厚度保持為2.3μm且未觀測到剝落。 Example C6g: The formulation of Example C6a was spin-coated on a 3 Å thermal oxide ruthenium wafer at 300 rpm for 3 seconds followed by 1300 rpm for 20 seconds, and soft baked at 110 ° C for 100 seconds to obtain about 2.3. The micron polymer film was then exposed at 500 mJ/cm 2 using a mask aligner with a broadband Hg vapor source (g, h and i bands). After the exposure, the wafer was exposed to light at 220 ° C for 60 minutes under a nitrogen atmosphere to obtain a cured film. The wafer was immersed in NMP for 10 minutes at 40 ° C and then the film thickness was measured. The film thickness was maintained at 2.3 μm and no peeling was observed.
實施例C15g:在300rpm下持續3秒接著在1300rpm下持續20秒將實施例C15a中之調配物旋塗於3吋熱氧化物矽晶圓上,在110℃下軟烘烤100秒得到約2.46微米之聚合物薄膜,接著使用具有寬頻帶Hg蒸氣光源(g、h及i頻帶)之光罩對準器在500mJ/cm2下進行曝光。在曝光後,晶圓在氮氣氛圍下於220℃下曝光後烘烤60分鐘獲得固化薄膜。晶圓在23℃下於NMP中浸泡60分鐘且接著量測膜厚度。膜厚度保持為2.56μm(4%增加)且未觀測到破裂及剝落。 Example C15g: The formulation of Example C15a was spin-coated on a 3 Å thermal oxide ruthenium wafer at 300 rpm for 3 seconds and then at 1300 rpm for 20 seconds, and soft baked at 110 ° C for 100 seconds to obtain about 2.46. The micron polymer film was then exposed at 500 mJ/cm 2 using a mask aligner with a broadband Hg vapor source (g, h and i bands). After the exposure, the wafer was exposed to light at 220 ° C for 60 minutes under a nitrogen atmosphere to obtain a cured film. The wafer was immersed in NMP for 60 minutes at 23 ° C and then the film thickness was measured. The film thickness was maintained at 2.56 μm (4% increase) and no cracking or peeling was observed.
應理解,上文中提供之資料證明本發明之共聚物具體實例以及包含該等共聚物之組成物具體實例適用於形成可自我成像的熱穩定的高度透明的低K介電層。更特定言之,該等共聚物及由其製得之層易於使用熟知微電子及/或光電處理而施用於基板,其介電常數等於或小於3.9且在超過300℃之溫度下呈現熱穩定性。 It will be understood that the information provided above demonstrates that the specific examples of the copolymers of the present invention and the compositions comprising the copolymers are suitable for forming a self-imageable, thermally stable, highly transparent, low-k dielectric layer. More specifically, the copolymers and layers made therefrom are readily applied to substrates using well known microelectronic and/or optoelectronic treatments having a dielectric constant of 3.9 or less and exhibiting thermal stability at temperatures in excess of 300 °C. Sex.
此外應理解,儘管已提供製造本發明之共聚物具體實例之方法之實施例,但該等方法不具有非限制性。亦即可使用其他反應時間、溫度、溶劑及其類似物調節及控制共聚物、共聚物組成物及由其製得之薄膜、 層或結構之特徵。舉例而言,當聚合實施例揭示使用AIBN作為聚合引發劑時,其他該等引發劑(諸如上文中列舉之例示性引發劑)亦可使用且可提供具有與任何特定實施例中所揭示不同的分子量的共聚物。應理解,該改良屬於本發明之具體實例之範疇內。類似地,可使用其他澆鑄及聚合溶劑且當使用該等其他溶劑製造本文中所描述之共聚物、組成物及薄膜或層具體實例時,該等其他溶劑亦在本發明之範疇內。 In addition, it should be understood that although embodiments of the methods of making the specific examples of the copolymers of the present invention have been provided, such methods are not intended to be limiting. It is also possible to adjust and control the copolymer, the copolymer composition and the film obtained therefrom by using other reaction time, temperature, solvent and the like. The characteristics of a layer or structure. For example, when the polymerization examples reveal the use of AIBN as a polymerization initiator, other such initiators, such as the exemplary initiators listed above, may also be used and may be provided to have a different disclosure than disclosed in any particular embodiment. A copolymer of molecular weight. It should be understood that the modifications are within the scope of the specific examples of the invention. Similarly, other casting and polymerization solvents can be used and when such other solvents are used to make the copolymers, compositions, and films or layer embodiments described herein, such other solvents are also within the scope of the invention.
A‧‧‧峰 A‧‧‧峰
B‧‧‧峰 B‧‧‧Feng
C‧‧‧肩 C‧‧‧ shoulder
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2012/046981 WO2013010190A2 (en) | 2011-07-14 | 2012-07-16 | A self-imageable layer forming polymer and compositions thereof |
US13/550,586 US8715900B2 (en) | 2011-07-14 | 2012-07-16 | Self-imageable layer forming polymer and compositions thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201406798A true TW201406798A (en) | 2014-02-16 |
TWI522377B TWI522377B (en) | 2016-02-21 |
Family
ID=50552535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102103896A TWI522377B (en) | 2012-07-16 | 2013-02-01 | A self-imageable layer forming polymer and compositions thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI522377B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114450318A (en) * | 2019-09-26 | 2022-05-06 | 住友电木株式会社 | Polymer, photosensitive resin composition, resin film, and electronic device |
-
2013
- 2013-02-01 TW TW102103896A patent/TWI522377B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114450318A (en) * | 2019-09-26 | 2022-05-06 | 住友电木株式会社 | Polymer, photosensitive resin composition, resin film, and electronic device |
Also Published As
Publication number | Publication date |
---|---|
TWI522377B (en) | 2016-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8715900B2 (en) | Self-imageable layer forming polymer and compositions thereof | |
JP5860193B2 (en) | Maleimide-containing cycloolefin polymer and use thereof | |
TWI401273B (en) | Directly photodefinable polymer compositions and methods thereof | |
US9944730B2 (en) | Polymers derived from norbornadiene and maleic anhydride and use thereof | |
EP2448991B1 (en) | A self-imageable film forming polymer, compositions thereof and devices and structures made therefrom | |
JP6564065B2 (en) | Polymers of maleimide and cycloolefin monomers as permanent dielectrics | |
TW201522397A (en) | Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof | |
US10303057B2 (en) | Fluorine free photopatternable phenol functional group containing polymer compositions | |
US20160147145A1 (en) | Photoimageable compositions containing oxetane functionality | |
US20200363722A1 (en) | Positive tone photosensitive compositions containing amic acid as latent base catalyst | |
KR20180088652A (en) | Photoacid generator and base-containing permanent dielectric composition | |
TWI522377B (en) | A self-imageable layer forming polymer and compositions thereof |