TW201400780A - Cooling plate - Google Patents

Cooling plate Download PDF

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Publication number
TW201400780A
TW201400780A TW101122442A TW101122442A TW201400780A TW 201400780 A TW201400780 A TW 201400780A TW 101122442 A TW101122442 A TW 101122442A TW 101122442 A TW101122442 A TW 101122442A TW 201400780 A TW201400780 A TW 201400780A
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Taiwan
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heat insulating
cooling
heat
top surface
insulating member
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TW101122442A
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Chinese (zh)
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Yu-Cheng Hsu
Yu-Min Yang
wen-huai Yu
Yu-Ling Chen
Bruce Hsu
Wen-Ching Hsu
Chung-Wen Lan
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Sino American Silicon Prod Inc
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Priority to TW101122442A priority Critical patent/TW201400780A/en
Publication of TW201400780A publication Critical patent/TW201400780A/en

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Abstract

Provided is a cooling plate for a crystalline ingot growth furnace. The cooling plate includes a main body, a plurality of heat dissipating elements, and at least one heat insulating element. The main body includes a first cuboid and a second cuboid protruding from the top surface of the first cuboid. The heat dissipating elements are disposed on the top surface of the first cuboid, and located at the corners of the top surface of the first cuboid. The at least one heat insulating element is disposed on the surface of the main body, wherein the at least one heat insulating element covers 5% to 30% of the surface area of the main body.

Description

冷卻盤 Cooling plate

本發明是有關於一種長晶設備,且特別是有關於適用於長晶爐的冷卻盤。 This invention relates to a crystal growth apparatus, and more particularly to a cooling disc suitable for use in a crystal growth furnace.

太陽能具有低污染、高再生、取得容易等特性,因應地球暖化與石油危機等議題,其應用與日俱增。太陽能的具體應用目前以矽晶太陽能電池為主流。矽晶太陽能電池的製程一般包括前段晶片製程、電池製程以及後段封裝製程,其中,前段晶片製程可區分為單晶矽晶片製程以及多晶矽晶片製程。 Solar energy has the characteristics of low pollution, high regeneration, easy access, etc., and its application is increasing in response to issues such as global warming and the oil crisis. The specific application of solar energy is currently dominated by twinned solar cells. The process of the twin-crystal solar cell generally includes a front-end wafer process, a battery process, and a back-end package process, wherein the front-end wafer process can be divided into a single-crystal germanium wafer process and a polysilicon wafer process.

單晶矽晶片的製造是將純化後的矽砂在拉晶機中熔融,再抽拉成為晶棒。至於多晶矽晶片的製造則是將純化後的矽砂熔融在置放於定向性長晶爐的坩堝中,再經定向凝固(directional solidification)鑄成晶塊。 The single crystal germanium wafer is produced by melting the purified barium sand in a crystal puller and then drawing it into an ingot. As for the polycrystalline germanium wafer, the purified germanium sand is melted in a crucible placed in a directional crystal growth furnace, and then cast into a crystal block by directional solidification.

圖1是一種習知的長晶爐的剖面示意圖。參照圖1,長晶爐10包括隔熱籠11、底板12、加熱器14、支撐柱16、冷卻盤18以及導管19。隔熱籠11與底板12可沿著垂直方向相對移動。具體地說,隔熱籠11與底板12可互不接觸,如同圖1所示;或者隔熱籠11與底板12可相互抵靠而界定出一密閉空間。加熱器14設於隔熱籠11中。支撐柱16將冷卻盤18固持於隔熱籠11中。導管19用以將氣體通入隔熱籠11中。以下,將參照圖1簡要說明一種習知 的長晶方法。 1 is a schematic cross-sectional view of a conventional crystal growth furnace. Referring to FIG. 1, the crystal growth furnace 10 includes a heat insulating cage 11, a bottom plate 12, a heater 14, a support column 16, a cooling plate 18, and a conduit 19. The heat insulating cage 11 and the bottom plate 12 are relatively movable in the vertical direction. Specifically, the heat insulating cage 11 and the bottom plate 12 may not be in contact with each other, as shown in FIG. 1; or the heat insulating cage 11 and the bottom plate 12 may abut each other to define a closed space. The heater 14 is provided in the heat insulating cage 11. The support column 16 holds the cooling disk 18 in the heat insulating cage 11. The conduit 19 is used to pass gas into the insulating cage 11. Hereinafter, a conventional description will be briefly described with reference to FIG. 1. The long crystal method.

首先,將矽原料30置入坩堝20中。接著,以加熱器14升高隔熱籠11的內部溫度,使矽原料30開始熔融。由於加熱器14比較靠近隔熱籠11的頂部,且在隔熱籠11與底板12互不接觸時,熱可從隔熱籠11的底部逸散,因此,隔熱籠11的內部空間中形成由上而下遞減的溫度梯度,使得矽原料30自其頂部開始熔融,而其底部仍然維持固態。這些維持固態的部份即為晶種,是長晶時晶粒成長的起始點。 First, the crucible material 30 is placed in the crucible 20. Next, the internal temperature of the heat insulating cage 11 is raised by the heater 14, so that the tantalum raw material 30 starts to melt. Since the heater 14 is relatively close to the top of the heat insulating cage 11, and the heat insulating cage 11 and the bottom plate 12 are not in contact with each other, heat can escape from the bottom of the heat insulating cage 11, and thus, the inner space of the heat insulating cage 11 is formed. The temperature gradient, which is decremented from top to bottom, causes the crucible material 30 to melt from its top while its bottom remains solid. These solid-state parts are seed crystals, which are the starting point for grain growth during long crystal growth.

然而,在加熱矽原料30的過程中,可能由於熱在隔熱籠11內分佈不均而使部份晶種熔化。舉例來說,由於熱是經由坩堝20的側壁傳導至矽原料30,因此矽原料30愈靠近坩堝20側壁的部份吸收愈多的熱,而靠近坩堝20角落的矽原料30由於相鄰兩個側壁而吸熱更多。換言之,在冷卻盤18角落上方的晶種比起在冷卻盤18中心上方的晶種具有更高的溫度,因此可能率先熔化。一旦晶種熔化,晶粒就無法在其上方成長,使最後產出之晶錠的缺陷密度提高。若要避免晶種熔化,一種習知的解決方案是加大隔熱籠11與底板12的間距,但是如此一來熱的流失變多,能源損耗也會變大。 However, in the process of heating the crucible material 30, some of the seed crystals may be melted due to uneven distribution of heat in the heat insulating cage 11. For example, since heat is conducted to the crucible material 30 via the sidewall of the crucible 20, the more the crucible material 30 absorbs the heat closer to the sidewall of the crucible 20, the crucible material 30 near the corner of the crucible 20 is adjacent to the crucible. The side walls absorb more heat. In other words, the seed crystal above the corner of the cooling disk 18 has a higher temperature than the seed crystal above the center of the cooling disk 18, and thus may be first melted. Once the seed crystals melt, the grains cannot grow above them, increasing the defect density of the resulting ingot. In order to avoid seed crystal melting, a conventional solution is to increase the distance between the heat insulating cage 11 and the bottom plate 12, but as a result, the heat loss is increased and the energy loss is also increased.

鑑於前述問題,為了降低晶錠的缺陷密度,長晶爐本身及其各構件的設計與配置方式仍有待改良。 In view of the foregoing problems, in order to reduce the defect density of the ingot, the design and arrangement of the crystal growth furnace itself and its various components still need to be improved.

本發明提供一種冷卻盤,能降低長晶時晶錠的缺陷密度。 The present invention provides a cooling disk capable of reducing the defect density of an ingot during growth.

本發明提出一種冷卻盤,適用於長晶爐。所述冷卻盤包括主體、多個散熱構件以及至少一絕熱構件。所述主體包括第一矩體(cuboid)以及自第一矩體的頂面突出的第二矩體。散熱構件配置於第一矩體的頂面上,且位於第一矩體的角落。絕熱構件配置於主體的表面上,其中所述絕熱構件覆蓋主體的總表面積的5%~30%。 The invention proposes a cooling disc suitable for use in a crystal growth furnace. The cooling disk includes a body, a plurality of heat dissipating members, and at least one heat insulating member. The body includes a first cuboid and a second moment protruding from a top surface of the first moment. The heat dissipating member is disposed on a top surface of the first rectangular body and located at a corner of the first rectangular body. The heat insulating member is disposed on a surface of the body, wherein the heat insulating member covers 5% to 30% of the total surface area of the body.

在本發明之一實施例中,上述絕熱構件例如配置於第一矩體的頂面上,且位於散熱構件之間。 In an embodiment of the invention, the heat insulating member is disposed, for example, on a top surface of the first rectangular body and located between the heat dissipating members.

在本發明之一實施例中,上述絕熱構件例如與散熱構件連接。 In an embodiment of the invention, the heat insulating member is connected to, for example, a heat dissipating member.

在本發明之一實施例中,上述散熱構件的材料例如為石墨。 In an embodiment of the invention, the material of the heat dissipating member is, for example, graphite.

在本發明之一實施例中,上述主體的材料例如為石墨。 In an embodiment of the invention, the material of the body is, for example, graphite.

在本發明之一實施例中,上述絕熱構件的材料例如為氧化鋁。 In an embodiment of the invention, the material of the heat insulating member is, for example, alumina.

在本發明之一實施例中,上述絕熱構件的材料例如為碳纖維。 In an embodiment of the invention, the material of the heat insulating member is, for example, carbon fiber.

在本發明之一實施例中,上述散熱構件例如為L型。 In an embodiment of the invention, the heat dissipating member is, for example, L-shaped.

在本發明之一實施例中,上述絕熱構件例如為長條型。 In an embodiment of the invention, the heat insulating member is, for example, a strip shape.

在本發明之一實施例中,上述第二矩體例如位於第一 矩體頂面的中央。 In an embodiment of the invention, the second moment body is located, for example, at the first The center of the top surface of the rectangular body.

基於上述,本發明的冷卻盤包括散熱構件與絕熱構件。散熱構件可以幫助冷卻盤散熱,而絕熱構件可以阻絕輻射熱。因此,本發明的冷卻盤具有良好的冷卻效果。 Based on the above, the cooling disk of the present invention includes a heat radiating member and a heat insulating member. The heat dissipating member can help the cooling plate to dissipate heat, and the heat insulating member can block the radiant heat. Therefore, the cooling disk of the present invention has a good cooling effect.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

圖2A是根據本發明一實施例所繪示的冷卻盤的示意圖。圖2B是圖2A的冷卻盤的爆炸圖。 2A is a schematic view of a cooling disk according to an embodiment of the invention. Figure 2B is an exploded view of the cooling disk of Figure 2A.

請同時參照圖2A與圖2B,根據本實施例,冷卻盤100包括主體110、散熱構件120與絕熱構件130。主體110包括第一矩體112以及自第一矩體112的頂面112a突出的第二矩體114,其中第二矩體114例如配置於頂面112a的中央。在本實施例中,主體的材料例如為石墨。 Referring to FIG. 2A and FIG. 2B simultaneously, according to the embodiment, the cooling disk 100 includes a main body 110, a heat dissipating member 120, and a heat insulating member 130. The body 110 includes a first moment body 112 and a second moment body 114 protruding from the top surface 112a of the first moment body 112, wherein the second moment body 114 is disposed, for example, at the center of the top surface 112a. In this embodiment, the material of the body is, for example, graphite.

散熱構件120配置於頂面112a上,且位於頂面112a的角落。在本實施例中,散熱構件120呈L型,且總數為四個,分別配置於頂面112a的角落,且分別與頂面112a和第二矩體114的側面114a接觸,但本發明並不特別限制散熱構件120的形狀。例如,在其他實施例中,散熱構件120也可為矩體或正方體(cube)。此外,散熱構件120可包括任何導熱性良好的材料,譬如石墨。 The heat dissipation member 120 is disposed on the top surface 112a and located at a corner of the top surface 112a. In this embodiment, the heat dissipating members 120 are L-shaped and have a total of four, respectively disposed at the corners of the top surface 112a, and are in contact with the top surface 112a and the side surface 114a of the second rectangular body 114, respectively, but the present invention does not The shape of the heat dissipation member 120 is particularly limited. For example, in other embodiments, the heat dissipating member 120 can also be a rectangular body or a cube. Further, the heat dissipation member 120 may include any material having good thermal conductivity such as graphite.

絕熱構件130配置於主體110的表面上,且覆蓋主體110約5%~30%的總表面積。所謂「主體的總表面積」, 是指主體110的所有表面的面積和。換言之,在本實施例中是指下述各者的面積和(參照圖2B):第二矩體114的頂面、第二矩體114的四個側面114a、頂面112a未被第二矩體114覆蓋的部份、第一矩體112的四個側面以及第一矩體112的底面。 The heat insulating member 130 is disposed on the surface of the body 110 and covers a total surface area of the body 110 of about 5% to 30%. The so-called "total surface area of the subject", It refers to the area sum of all surfaces of the body 110. In other words, in the present embodiment, the area of each of the following is referred to (refer to FIG. 2B): the top surface of the second rectangular body 114, the four side surfaces 114a of the second rectangular body 114, and the top surface 112a are not subjected to the second moment. The portion covered by the body 114, the four sides of the first rectangular body 112, and the bottom surface of the first rectangular body 112.

在本實施例中,絕熱構件130的總數為四個,配置於頂面112a上,分別位於散熱構件120之間,且分別與散熱構件120連接,但本發明不以此種配置方式為限。在其他實施例中,可配置一或多個絕熱構件130,且絕熱構件130也可不與散熱構件120接觸。 In this embodiment, the total number of the heat insulating members 130 is four, which are disposed on the top surface 112a, respectively located between the heat dissipating members 120, and are respectively connected to the heat dissipating members 120. However, the present invention is not limited to such an arrangement. In other embodiments, one or more insulating members 130 may be disposed, and the heat insulating members 130 may not be in contact with the heat dissipating members 120.

絕熱構件130的形狀沒有特別限制,在圖2A與圖2B中將其繪示為長條狀,但其亦可為片狀、塊狀或其他形狀。在圖2A與圖2B中,絕熱構件130為矩體,因此可以藉由改變絕熱構件130的長度L(參照圖2A)來調整主體110的表面被絕熱構件130覆蓋的比例。當然,也可以藉由其他方式調整主體110的表面被絕熱構件130覆蓋的比例,只要所述比例落於5%~30%即可。 The shape of the heat insulating member 130 is not particularly limited, and is depicted as an elongated shape in FIGS. 2A and 2B, but it may be in the form of a sheet, a block, or the like. In FIGS. 2A and 2B, the heat insulating member 130 is a rectangular body, and therefore the ratio of the surface of the main body 110 covered by the heat insulating member 130 can be adjusted by changing the length L of the heat insulating member 130 (refer to FIG. 2A). Of course, the ratio of the surface of the main body 110 covered by the heat insulating member 130 may be adjusted by other means as long as the ratio falls within 5% to 30%.

絕熱構件130可包括任何可以隔絕輻射熱的材料,例如氧化鋁或碳纖維。具體地說,絕熱構件130可為氧化鋁毯或碳纖絕熱條。 The heat insulating member 130 may include any material that can block radiant heat, such as alumina or carbon fiber. Specifically, the heat insulating member 130 may be an alumina blanket or a carbon fiber insulation strip.

以下將說明冷卻盤100用於長晶爐時的有益效果。 The advantageous effects of the cooling disk 100 in the case of a crystal growth furnace will be described below.

如前所述,長晶製程期間,隔熱籠內部形成由上而下遞減的溫度梯度。要將晶種維持為固態,意謂著晶種區域的溫度必須夠低。也就是說,冷卻盤100必須有效地將熱 轉移離開晶種區域。然而,來自加熱器(譬如圖1中的加熱器14)的輻射熱會使冷卻盤100的溫度升高,劣化其冷卻晶種區域的效果。本發明的冷卻盤100之角落設置有散熱構件120,能夠加強冷卻盤100的散熱效果。此外,本發明的冷卻盤100上還設置有絕熱構件130,能阻絕來自加熱器的輻射熱,使冷卻盤100相對於晶種區域維持於低溫。藉此,冷卻盤100能對晶種提供更好的冷卻效果,減少晶種在坩堝角落因過度加熱而熔化的情形 As mentioned above, during the growth process, the interior of the insulation cage forms a temperature gradient that decreases from top to bottom. Maintaining the seed crystal in a solid state means that the temperature of the seed zone must be low enough. That is, the cooling plate 100 must effectively heat Transfer away from the seed area. However, the radiant heat from the heater (譬, heater 14 in Fig. 1) causes the temperature of the cooling disk 100 to rise, deteriorating its effect of cooling the seed region. The heat sink member 120 is provided at a corner of the cooling disk 100 of the present invention, and the heat dissipation effect of the cooling disk 100 can be enhanced. Further, the cooling plate 100 of the present invention is further provided with a heat insulating member 130 capable of blocking radiant heat from the heater so that the cooling plate 100 is maintained at a low temperature with respect to the seed crystal region. Thereby, the cooling disc 100 can provide a better cooling effect to the seed crystal, and reduce the melting of the seed crystal in the corner of the crucible due to excessive heating.

為了確認本發明的冷卻盤的效果,以下將利用習知的冷卻盤與本發明的冷卻盤來成長晶錠。在比較例中,以一種習知的長晶爐(GT Solar公司販售的GT-DSS450TM)成長晶錠。此外,在實驗例中,以本發明的冷卻盤取代GT-DSS450TM中的冷卻盤。在實驗例與比較例中,採用相同的長晶製程參數來成長晶錠。然後,比較兩種晶錠角落處的缺陷密度(etch pit density,EPD),其結果示於圖3。 In order to confirm the effect of the cooling disk of the present invention, the ingot will be grown by using a conventional cooling disk and the cooling disk of the present invention. In the comparative example, in a known conventional crystal growth furnace (GT Solar selling company's GT-DSS450 TM) growing ingot. Further, in the experimental examples, the present invention is to replace the cooling coil GT-DSS450 TM cooling coils. In the experimental examples and comparative examples, the same crystal growth process parameters were used to grow the ingot. Then, the etch pit density (EPD) at the corners of the two ingots was compared, and the results are shown in FIG.

從圖3中可以得知,與GT-DSS450TM相較,使用裝設本發明之冷卻盤的長晶爐,能成長出缺陷密度顯然較低的晶錠;此外,藉由安裝在長晶爐頂部及底部的測溫裝置,可測得坩堝底部的溫度下降約30℃,由此可以證實本發明的冷卻盤的效果。 Can be seen from FIG. 3, GT-DSS450 TM contrast, using the present invention provided with a cooling plate of the crystal growth furnace to grow a low defect density is clearly ingot; In addition, by mounting the crystal growth furnace The top and bottom temperature measuring devices can measure the temperature drop at the bottom of the crucible by about 30 ° C, thereby confirming the effect of the cooling disc of the present invention.

綜上所述,本發明的冷卻盤包括散熱構件與絕熱構件。散熱構件可以幫助冷卻盤散熱,而絕熱構件可以阻絕來自加熱器的輻射熱。因此,本發明的冷卻盤具有良好的冷卻效果,若使用於長晶爐中,能有效地降低晶錠缺陷密 度。此外,若採用本發明的冷卻盤,在長晶製程期間可不需要為了避免晶種熔化而加大隔熱籠與底板的間距,因此,加熱器所產生的熱不會因為間距加大而加速流失。藉此,能減少能量耗損,降低成本。 In summary, the cooling disk of the present invention includes a heat dissipating member and a heat insulating member. The heat dissipating member can help the cooling plate to dissipate heat, and the heat insulating member can block the radiant heat from the heater. Therefore, the cooling disc of the present invention has a good cooling effect, and if used in a crystal growth furnace, the ingot defect can be effectively reduced. degree. In addition, if the cooling plate of the present invention is used, it is not necessary to increase the distance between the heat insulating cage and the bottom plate in order to avoid melting of the seed crystal during the crystal growth process, and therefore, the heat generated by the heater is not accelerated due to the increased pitch. . Thereby, energy consumption can be reduced and costs can be reduced.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧長晶爐 10‧‧‧Crystal furnace

11‧‧‧隔熱籠 11‧‧‧Insulation cage

12‧‧‧底板 12‧‧‧floor

14‧‧‧加熱器 14‧‧‧heater

16‧‧‧支撐柱 16‧‧‧Support column

18、100‧‧‧冷卻盤 18,100‧‧‧Cooling plate

19‧‧‧導管 19‧‧‧ catheter

20‧‧‧坩堝 20‧‧‧坩埚

30‧‧‧原料 30‧‧‧Materials

110‧‧‧主體 110‧‧‧ Subject

112‧‧‧第一矩體 112‧‧‧First moment

112a‧‧‧頂面 112a‧‧‧ top surface

114‧‧‧第二矩體 114‧‧‧Second moment

114a‧‧‧側面 114a‧‧‧ side

120‧‧‧散熱構件 120‧‧‧heating components

130‧‧‧絕熱構件 130‧‧‧Insulation components

L‧‧‧長度 L‧‧‧ length

圖1為一種習知的長晶爐的剖面示意圖。 1 is a schematic cross-sectional view of a conventional crystal growth furnace.

圖2A為根據第一實施例所繪示的冷卻盤的示意圖。 2A is a schematic view of a cooling disk according to a first embodiment.

圖2B為圖2A的冷卻盤的爆炸圖。 Figure 2B is an exploded view of the cooling disk of Figure 2A.

圖3呈現了使用習知的長晶爐與使用裝設本發明之冷卻盤的長晶爐所成長的晶錠的缺陷密度比較結果。 Figure 3 presents a comparison of defect densities of ingots grown using a conventional crystal growth furnace and a crystal growth furnace equipped with a cooling disk of the present invention.

100‧‧‧冷卻盤 100‧‧‧Cooling plate

110‧‧‧主體 110‧‧‧ Subject

112‧‧‧第一矩體 112‧‧‧First moment

114‧‧‧第二矩體 114‧‧‧Second moment

120‧‧‧散熱構件 120‧‧‧heating components

130‧‧‧絕熱構件 130‧‧‧Insulation components

L‧‧‧長度 L‧‧‧ length

Claims (10)

一種冷卻盤,適用於長晶爐,所述冷卻盤包括:一主體,包括:一第一矩體,具有一頂面;以及一第二矩體,自所述頂面突出;多個散熱構件,配置於所述頂面上,且位於所述頂面的角落;以及至少一絕熱構件,配置於所述主體的表面上,其中所述絕熱構件覆蓋所述主體的總表面積的5%~30%。 A cooling plate suitable for a crystal growth furnace, the cooling plate comprising: a body comprising: a first rectangular body having a top surface; and a second rectangular body protruding from the top surface; the plurality of heat dissipating members And disposed on the top surface and located at a corner of the top surface; and at least one heat insulating member disposed on a surface of the main body, wherein the heat insulating member covers 5% to 30 of a total surface area of the main body %. 如申請專利範圍第1項所述之冷卻盤,其中所述絕熱構件配置於所述頂面上,且位於所述散熱構件之間。 The cooling disk of claim 1, wherein the heat insulating member is disposed on the top surface and located between the heat dissipating members. 如申請專利範圍第2項所述之冷卻盤,其中所述絕熱構件與所述散熱構件連接。 The cooling disk of claim 2, wherein the heat insulating member is coupled to the heat dissipating member. 如申請專利範圍第1項所述之冷卻盤,其中所述散熱構件的材料包括石墨。 The cooling disk of claim 1, wherein the material of the heat dissipating member comprises graphite. 如申請專利範圍第1項所述之冷卻盤,其中所述主體的材料包括石墨。 The cooling disk of claim 1, wherein the material of the body comprises graphite. 如申請專利範圍第1項所述之冷卻盤,其中所述絕熱構件的材料包括氧化鋁。 The cooling disk of claim 1, wherein the material of the heat insulating member comprises alumina. 如申請專利範圍第1項所述之冷卻盤,其中所述絕熱構件的材料包括碳纖維。 The cooling disk of claim 1, wherein the material of the heat insulating member comprises carbon fiber. 如申請專利範圍第1項所述之冷卻盤,其中所述散熱構件為L型。 The cooling disk of claim 1, wherein the heat dissipating member is L-shaped. 如申請專利範圍第1項所述之冷卻盤,其中所述絕 熱構件為長條型。 The cooling plate of claim 1, wherein the The hot member is a long strip type. 如申請專利範圍第1項所述之冷卻盤,其中所述第二矩體位於所述頂面的中央。 The cooling disk of claim 1, wherein the second rectangular body is located at a center of the top surface.
TW101122442A 2012-06-22 2012-06-22 Cooling plate TW201400780A (en)

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