TW201349591A - Light emitting diode having photo-catalyst and suppressing short wavelength light function - Google Patents

Light emitting diode having photo-catalyst and suppressing short wavelength light function Download PDF

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TW201349591A
TW201349591A TW101119432A TW101119432A TW201349591A TW 201349591 A TW201349591 A TW 201349591A TW 101119432 A TW101119432 A TW 101119432A TW 101119432 A TW101119432 A TW 101119432A TW 201349591 A TW201349591 A TW 201349591A
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light
emitting diode
short
optical interference
interference film
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TW101119432A
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TWI467813B (en
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Jing-Heng Chen
Jun-Zhe Wu
Jin-Yi Chen
Zi-Lun Hong
Shi-Xin Ma
Kun-Huang Chen
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Jing-Heng Chen
Jun-Zhe Wu
Jin-Yi Chen
Zi-Lun Hong
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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Abstract

The invention provides a light emitting diode having photo-catalyst and capable of suppressing short wavelength light comprising a luminous body. Fluorescent powder material and a transparent encapsulating layer are disposed at the light source illuminated region of the luminous body. The light generated by light source is excited by the fluorescent powder material into white light and penetrating from the transparent encapsulating layer. An optical interference film capable of suppressing short wavelength light source is disposed on the external circumference of the transparent encapsulating layer in the illuminated region of the light source. The optical interference film is composed of bismuth oxide and resin, thereby forming the invention.

Description

具光觸媒與抑制短波長光功能之發光二極體Light-emitting diode and light-emitting diode for suppressing short-wavelength light function

  本發明係有關一種發光二極體,尤指一種具光觸媒與抑制短波長光功能之發光二極體。The invention relates to a light-emitting diode, in particular to a light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light.

  按白光發光二極體,係於藍光晶粒塗上黃光螢光粉或紫外光晶粒塗上三原色(RGB)螢光粉而激發出白光,此類白光發光二極體基本上具有省電、環保及體積小等優點,被廣泛運用於電子通訊、汽車、光電顯示等產業,故逐漸地取代了傳統照明設備,可望成為未來照明市場的產品趨勢。According to the white light emitting diode, the blue light crystal is coated with yellow fluorescent powder or the ultraviolet light crystal is coated with three primary color (RGB) fluorescent powder to excite white light, and the white light emitting diode is basically energy-saving and environmentally friendly. And small size and other advantages, is widely used in electronic communications, automotive, optoelectronic display and other industries, so gradually replaced the traditional lighting equipment, is expected to become the product trend of the future lighting market.

  目前已有的研究報導與商業發光二極體光源產品,絕大部分都只著重於發光效率、演色性、色溫等議題的提升與改善,鮮少關注於發光二極體光源之健康與安全問題。根據「法國食品、環境與職業健康安全局」在2010年10月的一份最新報告「Lighting systems using lightemit-ting diodes:health issu-es to be considered」中指出,由於發光二極體光源存在「藍光(Blue ligh-t)與「眩光(glare)」之問題,將對人體健康構成危害,並且提出具體明確的相關建議。光化學的危害與藍光(短波長)相關,其危害程度決定於藍光的累積曝照量,經由人體實驗觀察、細胞培養以及動物臨床實驗的研究證據顯示,短波長光波(藍紫光)是危險有害的,對於視網膜具有相當的毒害,遭受此風險的族群包括嬰幼、原本已罹患光敏性(light sen-sitive)疾病之患者與經常曝照於發光二極體光源下的人。當光源之發光率(luminance)大於10,000cd/m時將造成視覺不適,由於發光二極體光源的發光表面是集中於發光晶片約300x300μm的極小範圍之內,造成每一發光二極體光源的發光率皆高於造成視覺不適閥值的1000倍以上,因此發光二極體光源存在嚴重的眩光問題必須解決。At present, most of the research reports and commercial light-emitting diode light source products focus on the improvement and improvement of luminous efficiency, color rendering, color temperature, etc., and pay little attention to the health and safety of light-emitting diode light sources. . According to a recent report in the October 2010 issue of "Lighting systems using lightemit-ting diodes: health issu-es to be considered" by the French Food, Environmental and Occupational Health and Safety Agency, due to the presence of a light-emitting diode source The problems of blue ligh-t and glare will pose a hazard to human health and provide specific and relevant recommendations. The hazards of photochemistry are related to blue light (short wavelength), and the degree of damage is determined by the cumulative exposure of blue light. According to research evidence from human experimental observation, cell culture and animal clinical experiments, short-wavelength light waves (blue-violet light) are dangerous and harmful. The group is quite toxic to the retina, and the population at risk includes infants, patients who are already suffering from light sen-sitive diseases, and those who are often exposed to the light source of the light-emitting diode. When the luminance of the light source is greater than 10,000 cd/m 2 , visual discomfort will be caused, since the illuminating surface of the illuminating diode light source is concentrated within a very small range of about 300×300 μm 2 of the illuminating wafer, resulting in each illuminating dipole The illuminance of the body light source is higher than 1000 times of the visual discomfort threshold, so the problem of severe glare of the light-emitting diode source must be solved.

  如第5圖所示,即為一種習知的白光發光二極體,在於一基座90中設有一紫外光晶粒91以及三原色(RGB)螢光粉層92,以及一透明封裝層93,紫外光晶粒91發出的光源由該螢光粉層92激發為白光,而由該透明封裝層93透出。As shown in FIG. 5, it is a conventional white light emitting diode in which a susceptor 90 is provided with an ultraviolet ray 91 and a three primary color (RGB) phosphor layer 92, and a transparent encapsulation layer 93. The light source emitted from the ultraviolet crystal grain 91 is excited by the phosphor powder layer 92 into white light, and is transparent from the transparent encapsulating layer 93.

  然而,上述之白光發光二極體常見的問題,即發出白光時,在透出之光源中仍有藍光或紫外光的漏光,例如第6圖所示,紫外光晶粒搭配三原色螢光粉在發出白光時會在波長350至400nm之間產生相對強度達到2.5的短波長紫外光,另如第7圖所示,藍光晶粒搭配黃光螢光粉在發出白光時會在波長400至500nm之間產生強度達到1的短波長藍光,由於藍光及紫外光等短波長光容易對眼睛及皮膚造成傷害而使人感到眼睛疲勞、酸痛甚至頭痛等不適問題,且在發光時會產生眩光問題,發光品質亦有待加強。However, the common problem of the above-mentioned white light emitting diodes is that when white light is emitted, there is still light leakage of blue light or ultraviolet light in the light source that is transmitted. For example, as shown in FIG. 6, the ultraviolet light crystal grains are matched with the three primary color fluorescent powders. When white light is emitted, short-wavelength ultraviolet light with a relative intensity of 2.5 is generated between 350 and 400 nm. As shown in Fig. 7, the blue crystal grain and the yellow fluorescent powder will emit at a wavelength of 400 to 500 nm when emitting white light. A short-wavelength blue light with a intensity of 1 is generated. Since short-wavelength light such as blue light and ultraviolet light is easily damaged to the eyes and skin, it may cause eye strain, soreness, and even headaches, and glare problems may occur when light is emitted. Quality needs to be strengthened.

  因此,如何解決上述習用發光二極體之問題者,即為本創作之主要重點所在。Therefore, how to solve the problem of the above-mentioned conventional light-emitting diodes is the main focus of the creation.

  本發明之主要目的,在於解決上述的問題而提供一種具光觸媒與抑制短波長光功能之發光二極體,藉由結合氧化鉍(Bi23)材之光學干涉膜,達到有效抑制短波長光而降低短波長傷害風險、消除眩光而提升發光效率,以及空氣淨化等功效。The main object of the present invention is to solve the above problems and provide a light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light, and an optical interference film of bismuth oxide (Bi 2 O 3 ) material is combined to effectively suppress short wavelengths. Light reduces the risk of short-wave damage, eliminates glare and improves luminous efficiency, as well as air purification.

  為達前述之目的,本發明係包含一發光體,於此發光體光源發散範圍設有螢光粉材及透明封裝層,該發光體發出的光源由該螢光粉材激發為白光而由該透明封裝層透出,其特徵在於:該透明封裝層外周在發光體的發光範圍設有抑制短波長光源之光學干涉膜,此述光學干涉膜由氧化鉍材及樹脂組成。In order to achieve the above object, the present invention comprises an illuminant, wherein a luminescent body and a transparent encapsulating layer are disposed in a diverging range of the illuminant light source, and the light source emitted by the illuminating body is excited by the luminescent material into white light. The transparent encapsulating layer is transparent, and an optical interference film for suppressing a short-wavelength light source is disposed on the outer periphery of the transparent encapsulating layer. The optical interference film is composed of an oxidized bismuth material and a resin.

  本發明之上述及其他目的與優點,不難從下述所選用實施例之詳細說明與附圖中,獲得深入了解。The above and other objects and advantages of the present invention will be readily understood from

  當然,本發明在某些另件上,或另件之安排上容許有所不同,但所選用之實施例,則於本說明書中,予以詳細說明,並於附圖中展示其構造。Of course, the invention may be varied on certain components, or in the arrangement of the components, but the selected embodiments are described in detail in the specification and their construction is shown in the drawings.

  請參閱第1圖,圖中所示者為本發明所選用之實施例結構,此僅供說明之用,在專利申請上並不受此種結構之限制。Referring to Figure 1, the structure of the embodiment selected for use in the present invention is for illustrative purposes only and is not limited by such structure in the patent application.

  本創作提供一種具光觸媒與抑制短波長光功能之發光二極體,於本實施例中如第1圖所示,其係:The present invention provides a light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light. In this embodiment, as shown in FIG. 1, the system is:

  一發光體1,於本實施例中設於一基座2中,且於基座2外之引腳20電性連接,此發光體1發出的光源於圖中朝上發散,在光源發散的範圍設有螢光粉材以樹脂硬化為一螢光粉層3,並於此螢光粉層3上設一透明封裝層4,該發光體1發出的光源由該螢光粉材激發為白光而由該透明封裝層4折射透出。於本實施例中,該發光體1為紫外光晶粒,可發出紫外光,該螢光粉材對應為三原色螢光粉;此外,該發光體1亦可為藍光晶粒,可發出藍光,該螢光粉材則對應為黃光螢光粉。An illuminant 1 is disposed in a pedestal 2 in the embodiment, and is electrically connected to the pin 20 outside the susceptor 2, and the light source emitted by the illuminator 1 diverges upward in the figure, and is diverged in the light source. The phosphor powder is hardened into a phosphor layer 3, and a transparent encapsulating layer 4 is disposed on the phosphor layer 3. The light source emitted by the illuminator 1 is excited by the luminescent material into white light. The transparent encapsulation layer 4 is refracted. In the embodiment, the illuminant 1 is an ultraviolet ray, which can emit ultraviolet light, and the luminescent material corresponds to three primary color phosphors; in addition, the illuminator 1 can also be a blue crystal grain, which can emit blue light. The fluorescent powder corresponds to yellow fluorescent powder.

  該透明封裝層4外周在發光體的發光範圍設有一光學干涉膜5,此光學干涉膜5具有抑制短波長光源的功能,此述光學干涉膜5由氧化鉍材(Bi23)及樹脂組成。於本實施例中,該光學干涉膜5係以膠狀之樹脂中添加氧化鉍材,並附著於該透明封裝層4外周而硬化成型。The outer periphery of the transparent encapsulation layer 4 is provided with an optical interference film 5 having a function of suppressing a short-wavelength light source, which is made of oxidized bismuth material (Bi 2 O 3 ) and resin, in the light-emitting range of the illuminant. composition. In the present embodiment, the optical interference film 5 is formed by adding an oxidized bismuth material to a gel-like resin and adhering to the outer periphery of the transparent encapsulating layer 4 to be hardened.

  如第2圖所示,在無光學干涉膜5之抑制時,在波長350至400nm之間產生強度達到1的短波長光,在波長425至475nm之間產生強度達到0.5的短波長光,在波長500至550nm之間產生強度達到0.8的短波長光,在波長600至700nm之間產生強度達到0.6的短波長光;在光學干涉膜5之抑制下,在波長350至400nm之間的短波長光被抑制而強度下降至0.4以下,在波長425至475nm之間的短波長光被抑制而強度下降至0.2以下,在波長500至550nm之間的短波長光被抑制而強度下降至0.3以下,在波長600至700nm之間的短波長光被抑制而強度下降至0.2以下。As shown in Fig. 2, in the absence of suppression by the optical interference film 5, short-wavelength light having a intensity of 1 is generated between wavelengths of 350 to 400 nm, and short-wavelength light having a intensity of 0.5 is generated between wavelengths of 425 to 475 nm. Producing short-wavelength light with a intensity of 0.8 between wavelengths of 500 to 550 nm, short-wavelength light of intensity of 0.6 between wavelengths of 600 to 700 nm; and suppression of wavelength of 350 to 350 by the optical interference film 5 The short-wavelength light between 400 nm is suppressed and the intensity is lowered to 0.4 or less, the short-wavelength light between the wavelengths of 425 to 475 nm is suppressed and the intensity is lowered to 0.2 or less, and the short wavelength between the wavelengths of 500 to 550 nm Light is suppressed and the intensity is lowered to 0.3 or less, and short-wavelength light having a wavelength of 600 to 700 nm is suppressed and the intensity is lowered to 0.2 or less.

  按光學干涉膜的作用在於,當入射光由光學干涉膜射入時,若光學干涉膜的厚度與特定的入射光波長對應時,入射光將由此光學干涉膜反射折回,欲達成此功效者,必須藉由入射光波長進一步計算於發光二極體中光學干涉膜的厚度,而光學干涉膜的厚度d計算公式為:            The effect of the optical interference film is that when the incident light is incident by the optical interference film, if the thickness of the optical interference film corresponds to a specific incident light wavelength, the incident light will be reflected back by the optical interference film, and to achieve this effect, The thickness of the optical interference film in the light-emitting diode must be further calculated by the wavelength of the incident light, and the thickness d of the optical interference film is calculated as:

  上式中,d為光學干涉膜厚度,m為0~N的整數,λ為介質中波長,λ為入射光波長,n為折射率。In the above formula, d is the thickness of the optical interference film, m is an integer from 0 to N, λ is the wavelength in the medium, λ o is the wavelength of the incident light, and n is the refractive index.

  於本實施例中,當m=0時,λ=385nm;取n=1.5,光學干涉膜厚度d為:                    In the present embodiment, when m=0, λ o =385 nm; taking n=1.5, the optical interference film thickness d is:

  因此,本實施例之光學干涉膜5厚度為64.17奈米(nm),若波長在385nm的光因漏光而射入該光學干涉膜5時,光將由光學干涉膜5反射回螢光粉層3,反射光將由螢光粉層3激發為白光而由光學干涉膜5透出。Therefore, the thickness of the optical interference film 5 of the present embodiment is 64.17 nanometers (nm), and if light having a wavelength of 385 nm is incident on the optical interference film 5 due to light leakage, the light will be reflected back to the fluorescent powder by the optical interference film 5. In the layer 3, the reflected light is excited by the phosphor layer 3 into white light and is transmitted through the optical interference film 5.

  由上述之說明不難發現本創作之發光二極體相較於習知的發光二極體具有以下優點:From the above description, it is not difficult to find that the light-emitting diode of the present invention has the following advantages over the conventional light-emitting diode:

  1、由於氧化鉍材為細小顆粒狀而分佈有散射器(Diffuser)功能,故當光線穿透氧化鉍材時將被發散使照度均勻而達到防眩光的效果。1. Since the oxidized coffin is distributed in the form of fine particles and has a diffuser function, when the light penetrates the oxidized coffin, it will be dispersed to make the illuminance uniform and achieve the anti-glare effect.

  2、前述紫外光或藍光有漏光現象時,除了會被前述光學干涉膜5抑制之外,部分紫外光或藍光會經由光學干涉膜5反射,再被所述螢光粉材激發成出白光,故能提升發光的效率,進而達到節能的功效。2. When the ultraviolet light or the blue light has a light leakage phenomenon, in addition to being suppressed by the optical interference film 5, part of the ultraviolet light or blue light is reflected by the optical interference film 5, and then excited by the fluorescent powder material to form white light. Therefore, it can improve the efficiency of light emission, thereby achieving the effect of energy saving.

  3、由於光學干涉膜的膜厚固定,而光則以不同角度穿透光學干涉膜,故部份的短波長光仍會由經過光學干涉膜而向外漏出,藉由氧化鉍材本身的電子能階為3.9ev以下,而具有吸收紫外光與短波長可見光的特性,因而部份經過光學干涉膜5向外漏出的短波長光將被此述之氧化鉍材所吸收,以攔截可能向外漏出的短波長光。3. Since the film thickness of the optical interference film is fixed, and the light penetrates the optical interference film at different angles, part of the short-wavelength light will still leak out through the optical interference film by oxidizing the electron energy of the coffin itself. The order is below 3.9 ev, and has the characteristics of absorbing ultraviolet light and short-wavelength visible light, so that some of the short-wavelength light leaking out through the optical interference film 5 will be absorbed by the oxidized sputum, so as to intercept the leakage. Short wavelength light.

  4、所述氧化鉍材亦為一種光觸媒,故吸收紫外光或藍光之後,能具有空氣淨化的效果,兼具有環保的功效。4. The oxidized bismuth material is also a photocatalyst, so after absorbing ultraviolet light or blue light, it can have the effect of air purification and has an environmental protection effect.

  5、氧化鉍材本身略為鵝(蛋)黃色,光源透過氧化鉍材而發出時,色溫經測試接近於5611K,故本創作之發光二極體,其發出的光源具有高演色性,其光源接近自然光,明亮的感覺使人集中精神,且能呈現物體的原色,令物體清晰可見,適用辦公室、教室、會議室、圖書館等場所的光源提供。5. The oxidized coffin itself is slightly yellow in goose (egg). When the light source is emitted through the oxidized coffin, the color temperature is tested to be close to 5611K. Therefore, the light-emitting diode of the present invention has a high color rendering and its light source is close. Natural light, bright feeling makes people concentrate, and can present the original color of the object, making the object clear and visible, suitable for light sources in offices, classrooms, conference rooms, libraries and other places.

  當然,本發明仍存在許多例子,其間僅細節上之變化。請參閱第3圖,其係本發明之第二實施例,其與第一實施例之主要差異,在於本實施例之光學干涉膜6,係於該透明封裝層4外周設一樹脂層60,並於此樹脂層60上設一氧化鉍層61,此氧化鉍層61以該樹脂層60附著在透明封裝層4外周,藉此達到與第一實施例相同的功效。Of course, there are many examples of the invention, with only minor variations in the details. Referring to FIG. 3, which is a second embodiment of the present invention, the main difference from the first embodiment is that the optical interference film 6 of the present embodiment is provided with a resin layer 60 on the outer periphery of the transparent encapsulation layer 4. A ruthenium oxide layer 61 is provided on the resin layer 60. The ruthenium oxide layer 61 is adhered to the outer periphery of the transparent encapsulation layer 4 by the resin layer 60, thereby achieving the same effect as the first embodiment.

  請參閱第4圖,其係本發明之第三實施例,其與第一實施例之主要差異,在於該透明封裝層4於靠近該發光體1的一側設有光學干涉膜7,該光學干涉膜7與螢光粉層3之間存在一空氣層70,且該透明封裝層4在相反於光學干涉膜7的一側設有氧化鉍層8。於本實施例中,該發光體1發出的光源由該螢光粉層3激發為白光,而穿經該空氣層70折射再射入該光學干涉膜7中,且光線再經透明封裝層4穿出氧化鉍層8外。Referring to FIG. 4 , which is a third embodiment of the present invention, the main difference from the first embodiment is that the transparent encapsulation layer 4 is provided with an optical interference film 7 on the side close to the illuminator 1 . An air layer 70 is present between the interference film 7 and the phosphor layer 3, and the transparent encapsulation layer 4 is provided with a hafnium oxide layer 8 on the side opposite to the optical interference film 7. In this embodiment, the light source emitted by the illuminator 1 is excited by the phosphor layer 3 into white light, and is refracted through the air layer 70 and injected into the optical interference film 7, and the light passes through the transparent encapsulation layer 4. Out of the yttrium oxide layer 8 outside.

  因此,透過該光學干涉膜7抑制紫外光或藍光等短波長光源而可消除短波長,且部分紫外光或藍光亦可由光學干涉膜7反射,再被所述螢光粉材激發成出白光,以提高發光效率,又以該氧化鉍層8為光觸媒而可達到淨化空氣的功效,經氧化鉍層8發出的光源亦具有適當之色溫以及高演色性的優點,藉此達到與第一實施例相同的功效。Therefore, the short-wavelength can be eliminated by suppressing the short-wavelength light source such as ultraviolet light or blue light through the optical interference film 7, and part of the ultraviolet light or blue light can also be reflected by the optical interference film 7, and then excited by the fluorescent powder material to form white light. In order to improve the luminous efficiency, the cerium oxide layer 8 is used as a photocatalyst to achieve the effect of purifying air, and the light source emitted from the yttrium oxide layer 8 also has the advantages of appropriate color temperature and high color rendering property, thereby achieving the same with the first embodiment. The same effect.

  以上所述實施例之揭示係用以說明本發明,並非用以限制本發明,故舉凡數值之變更或等效元件之置換仍應隸屬本發明之範疇。The above description of the embodiments is intended to be illustrative of the invention and is not intended to limit the scope of the invention.

  由以上詳細說明,可使熟知本項技藝者明瞭本發明的確可達成前述目的,實已符合專利法之規定,爰提出專利申請。From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the foregoing objects and is in accordance with the provisions of the Patent Law.

(習用部分)(customized part)

90...基座90. . . Pedestal

91...紫外光晶粒91. . . Ultraviolet crystal grain

92...螢光粉層92. . . Fluorescent powder layer

93...透明封裝層93. . . Transparent encapsulation layer

(本發明部分)(part of the invention)

1...發光體1. . . illuminator

2...基座2. . . Pedestal

20...引腳20. . . Pin

3...螢光粉層3. . . Fluorescent powder layer

4...透明封裝層4. . . Transparent encapsulation layer

5...光學干涉膜5. . . Optical interference film

6...光學干涉膜6. . . Optical interference film

60...樹脂層60. . . Resin layer

61...氧化鉍層61. . . Cerium oxide layer

7...光學干涉膜7. . . Optical interference film

70...空氣層70. . . Air layer

8...氧化鉍層8. . . Cerium oxide layer

第1圖係第一實施例之發光二極體平面結構示意圖。Fig. 1 is a schematic view showing the planar structure of a light-emitting diode of the first embodiment.

第2圖係第一實施例之發光二極體短波長光被抑制前及被抑制後之波形圖。Fig. 2 is a waveform diagram before and after suppression of short-wavelength light of the light-emitting diode of the first embodiment.

第3圖係第二實施例之發光二極體平面結構示意圖。Fig. 3 is a schematic view showing the planar structure of the light-emitting diode of the second embodiment.

第4圖係第三實施例之發光二極體平面結構示意圖。Fig. 4 is a schematic view showing the planar structure of the light-emitting diode of the third embodiment.

第5圖係習用發光二極體平面結構示意圖。Figure 5 is a schematic view of the planar structure of a conventional light-emitting diode.

第6圖係習知紫外光晶粒發光時短波長光未被抑制之波形圖。Fig. 6 is a waveform diagram showing that short-wavelength light is not suppressed when ultraviolet light crystal grains are emitted.

第7圖係習知藍光晶粒發光時短波長光未被抑制之波形圖。Fig. 7 is a waveform diagram in which short-wavelength light is not suppressed when the blue crystal grain is illuminated.

1...發光體1. . . illuminator

2...基座2. . . Pedestal

20...引腳20. . . Pin

3...螢光粉層3. . . Fluorescent powder layer

4...透明封裝層4. . . Transparent encapsulation layer

5...光學干涉膜5. . . Optical interference film

Claims (8)

一種具光觸媒與抑制短波長光功能之發光二極體,其係包含一發光體,於此發光體光源發散範圍設有螢光粉材及透明封裝層,該發光體發出的光源由該螢光粉材激發為白光而由該透明封裝層透出,其特徵在於:該透明封裝層外周在發光體的發光範圍設有抑制短波長光源之光學干涉膜,此述光學干涉膜由氧化鉍材及樹脂組成。A light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light, comprising an illuminant, wherein a luminescent body and a transparent encapsulation layer are disposed in a diverging range of the illuminant light source, and the illuminating body emits a light source The powder is excited to be white light and is transparent to the transparent encapsulating layer. The outer periphery of the transparent encapsulating layer is provided with an optical interference film for suppressing a short-wavelength light source in the light-emitting range of the illuminating body. The optical interference film is made of oxidized bismuth material and Resin composition. 依申請專利範圍第1項所述之具光觸媒與抑制短波長光功能之發光二極體,其中,該光學干涉膜係以膠狀之樹脂中添加可吸收紫外光或藍光之氧化鉍材,並附著於該透明封裝層外周而硬化成型。a light-emitting diode having a photocatalyst and a short-wavelength light-reducing function according to the first aspect of the patent application, wherein the optical interference film is formed by adding an oxidized bismuth material capable of absorbing ultraviolet light or blue light to a gel-like resin, and Attached to the outer periphery of the transparent encapsulation layer to be hardened. 依申請專利範圍第1項所述之具光觸媒與抑制短波長光功能之發光二極體,其中,該光學干涉膜係於該透明封裝層外周設一樹脂層,並於此樹脂層上設一氧化鉍層,此氧化鉍層以該樹脂層附著在透明封裝層外周。The light-emitting diode having the photocatalyst and the function of suppressing the short-wavelength light according to the first aspect of the patent application, wherein the optical interference film is provided with a resin layer on the outer periphery of the transparent encapsulation layer, and a resin layer is disposed on the resin layer. The ruthenium oxide layer is adhered to the outer periphery of the transparent encapsulation layer by the resin layer. 依申請專利範圍第1項所述之具光觸媒與抑制短波長光功能之發光二極體,其中該發光體為紫外光晶粒,該螢光粉材對應為三原色螢光粉。A light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light according to the first aspect of the patent application, wherein the illuminant is an ultraviolet ray, and the luminescent powder corresponds to a three-primary luminescent powder. 依申請專利範圍第1項所述之具光觸媒與抑制短波長光功能之發光二極體,其中該發光體為藍光晶粒,該螢光粉材對應為黃光螢光粉。A light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light according to the first aspect of the patent application, wherein the illuminant is a blue light crystal, and the fluorescent powder corresponds to a yellow luminescent powder. 一種具光觸媒與抑制短波長光功能之發光二極體,其係包含一發光體,於此發光體光源發散範圍設有螢光粉材及透明封裝層,該發光體發出的光源由該螢光粉材激發為白光而由該透明封裝層透出,其特徵在於:該透明封裝層於靠近該發光體的一側設有抑制短波長光源之光學干涉膜,該光學干涉膜與螢光粉材之間存在一空氣層,且該透明封裝層在相反於光學干涉膜的一側設有氧化鉍層。A light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light, comprising an illuminant, wherein a luminescent body and a transparent encapsulation layer are disposed in a diverging range of the illuminant light source, and the illuminating body emits a light source The powder is excited to be white light and is transparent to the transparent encapsulation layer. The transparent encapsulation layer is provided on an side close to the illuminant with an optical interference film for suppressing a short-wavelength light source, the optical interference film and the fluorescent powder material. There is an air layer between them, and the transparent encapsulation layer is provided with a ruthenium oxide layer on the side opposite to the optical interference film. 依申請專利範圍第6項所述之具光觸媒與抑制短波長光功能之發光二極體,其中該發光體為紫外光晶粒,該螢光粉材對應為三原色螢光粉。According to the sixth aspect of the patent application, the photodiode and the short-wavelength light-reducing light-emitting diode are used, wherein the illuminant is an ultraviolet ray, and the luminescent powder corresponds to a three-primary luminescent powder. 依申請專利範圍第6項所述之具光觸媒與抑制短波長光功能之發光二極體,其中該發光體為藍光晶粒,該螢光粉材對應為黃光螢光粉。A light-emitting diode having a photocatalyst and a function of suppressing short-wavelength light according to the sixth aspect of the patent application, wherein the illuminant is a blue ray, and the luminescent material corresponds to a yellow luminescent powder.
TW101119432A 2012-05-30 2012-05-30 Light emitting diode having photo-catalyst and suppressing short wavelength light function TW201349591A (en)

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