TW201343552A - Process for preparing high-purity SiO2 - Google Patents

Process for preparing high-purity SiO2 Download PDF

Info

Publication number
TW201343552A
TW201343552A TW102104219A TW102104219A TW201343552A TW 201343552 A TW201343552 A TW 201343552A TW 102104219 A TW102104219 A TW 102104219A TW 102104219 A TW102104219 A TW 102104219A TW 201343552 A TW201343552 A TW 201343552A
Authority
TW
Taiwan
Prior art keywords
cerium oxide
washing
zone
precipitation
sio
Prior art date
Application number
TW102104219A
Other languages
Chinese (zh)
Inventor
Juergen Erwin Lang
Hartwig Rauleder
Bodo Frings
Christian Panz
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of TW201343552A publication Critical patent/TW201343552A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/187Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates
    • C01B33/193Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates of aqueous solutions of silicates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141Preparation of hydrosols or aqueous dispersions
    • C01B33/142Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/51Particles with a specific particle size distribution
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/51Particles with a specific particle size distribution
    • C01P2004/53Particles with a specific particle size distribution bimodal size distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

The present invention relates to a process for preparing high-purity SiO2, comprising the steps of a. preparing an initial charge from an acidifier having a pH of less than 2; b. providing a silicate solution; c. adding the silicate solution from step b. to the initial charge from step a. such that the pH of the resulting precipitate suspension always remains at a value less than 2; and d. removing and washing the resulting silicon dioxide; wherein the silicon dioxide obtained by the precipitation is removed continuously or semicontinuously from the precipitation region and washed in a wash region separate from the precipitation region. The present invention further describes a plant for performing the present process.

Description

高純度SiO 2 之製法High purity SiO 2 method

本發明係有關高純度SiO2之製法。本發明進一步有關一種用以執行本發明方法的工廠。 The present invention relates to a process for producing high purity SiO 2 . The invention further relates to a plant for carrying out the method of the invention.

電子組件(尤其是光電伏打電池)的製造中之重要成本因素是所需高純度矽之費用。是故,已極盡努力在不昂貴的情況下製得具所需純度的矽。其中一種相對平價之方法係詳述於WO 2010/037694中。此方法中,SiO2在光電弧爐中藉碳還原成金屬矽。所使用之起始物質一般為與碳源組合之SiO2模塑物。 An important cost factor in the manufacture of electronic components, particularly photovoltaic cells, is the cost of the high purity helium required. Therefore, every effort has been made to produce crucibles of the required purity without being expensive. One of the relatively inexpensive methods is detailed in WO 2010/037694. In this method, SiO 2 is reduced to metal ruthenium by carbon in a photo-arc furnace. The starting materials used are typically SiO 2 moulds combined with a carbon source.

就此目的而言,SiO2可藉洗滌製程加以純化。經純化之SiO2一般係經研磨,隨後與碳源摻合,例如醣,且緊壓入模型中。存在於模塑物中之醣隨後可焦解產生碳,以得到可在光電弧爐中被還原成矽的模塑物。 For this purpose, SiO 2 can be purified by a washing process. The purified SiO 2 is typically ground and subsequently blended with a carbon source, such as sugar, and pressed into the mold. The sugar present in the molding can then be charred to produce carbon to give a molding that can be reduced to ruthenium in a photo-arc furnace.

自先前技術得知之高純度矽製法已展現良好之性質走勢。然而,仍然的需要改善此等方法。對於前文詳述問題之一態樣,製備高純度二氧化矽係一項特別的挑戰。 The high purity tanning process known from prior art has shown a good trend in nature. However, there is still a need to improve these methods. For one of the problems detailed above, the preparation of high purity cerium oxide is a particular challenge.

就先前技術而言,本發明所針對之問題是提供一種可以簡單且平價方式執行之製備高純度二氧化矽(SiO2)的方法。更特別的是該方法是要於用以純化二氧化矽之工廠中長期執行,而沒有任何中斷系統的需要。 To the prior art, the problem for which the present invention is to provide a simple and cheap way to perform the production of high purity silicon dioxide (SiO 2) method. More specifically, the process is performed in a long-term process in a plant for purifying cerium oxide without any need to interrupt the system.

特別之問題是提供一種可極高速地執行的方法。此外,該方法要可在最少製程步驟數目下執行,且此等步驟需簡易且可再現。 A particular problem is to provide a method that can be performed at very high speeds. Moreover, the method can be performed with a minimum number of process steps, and such steps need to be simple and reproducible.

此外,該方法之執行不會危害環境或人類健康,故可實質的停用有害健康之物質或可能有害環境之化合物。 In addition, the implementation of the method does not endanger the environment or human health, so that substances that are harmful to health or compounds that may be harmful to the environment can be physically deactivated.

此外,所使用之進料應可極平價的製得或獲得。 In addition, the feed used should be made or obtained at very low cost.

此外,將提供一種具有特別高強度之二氧化矽模塑物。 Further, a cerium oxide molding having a particularly high strength will be provided.

其他未詳細提及的問題可由發明說明、實施例及申請專利範圍之整體內容清楚明白。 Other problems that are not mentioned in detail are clear from the general description of the invention, the examples and the scope of the patent application.

藉由申請專利範圍第1項所述之方法可解決此等問題 及未明確陳述但可以顯而易見之方式自本發明所討論之關連推導或由彼顯而易見的其他問題。對此方法之適當修飾係由附屬項且回頭參考申請專利範圍第1項來加以保護。 This problem can be solved by applying the method described in item 1 of the patent scope. And other matters that are not explicitly stated but can be readily apparent from the context of the present invention. Appropriate modifications to this method are protected by an affiliate and are referred back to the first item of the patent application.

本發明因而係有關一種高純度SiO2之製法,其包含以下步驟:a. 自pH小於2之酸化劑製備初始進料;b 提供矽酸鹽溶液; c. 將來自步驟b之矽酸鹽溶液添加至來自步驟a之初始進料,使得形成之沉澱物懸浮液的pH始終保持在小於2的值;及d. 取出且洗滌所形成之二氧化矽;其特徵在於:連續或半連續地自沉澱區取出藉沉澱所製得的二氧化矽,且於與沉澱區分離之洗滌區中加以洗滌。 The invention thus relates to a process for the preparation of a high purity SiO 2 comprising the steps of: a. preparing an initial charge from an acidulant having a pH of less than 2; b providing a citrate solution; c. administering a citrate solution from step b Adding to the initial feed from step a such that the pH of the formed precipitate suspension is maintained at a value less than 2; and d. removing and washing the formed cerium oxide; characterized by: continuous or semi-continuous self The cerium oxide obtained by the precipitation is taken out in the precipitation zone and washed in a washing zone separated from the precipitation zone.

本發明方法可簡易且平價的執行。同時,尤其可將因純化所造成之雜質減至最少。 The method of the invention can be performed simply and at a low cost. At the same time, impurities caused by purification can be minimized.

此外,該方法可在長期純化二氧化矽之工廠中實施,而沒有任何中斷系統的需要。 In addition, the process can be carried out in a long-term purification of cerium oxide plants without any need to interrupt the system.

而且,該方法可於極高速度執行。此外,該方法可在極少製程步驟下執行,且此等步驟簡易且可再現。 Moreover, the method can be performed at very high speeds. Moreover, the method can be performed with very few process steps, and the steps are simple and reproducible.

此外,該方法之執行不會危害環境或人類健康,故可實質的停用有害健康之物質或可能有害環境之化合物。 In addition, the implementation of the method does not endanger the environment or human health, so that substances that are harmful to health or compounds that may be harmful to the environment can be physically deactivated.

此外,所使用之進料通常可平價的製得或獲得。 In addition, the feeds used are typically made or obtained at affordable prices.

在特別之本發明具體實施例中,提供可產生特別穩定之模塑物之二氧化矽。 In particular embodiments of the invention, cerium oxide is provided which produces a particularly stable molding.

本發明方法係用以製備高純度二氧化矽(SiO2)。特別地,可使用藉本發明方法製得之二氧化矽來作為用以製備金屬矽的原料。此外,藉本發明方法製得之二氧化矽可用以生產SiO2模塑物,該模塑物有利於金屬矽之製備及進一步加工有關且為熟習此技術者所熟知的組份之製造。 The process of the invention is used to prepare high purity cerium oxide (SiO 2 ). In particular, cerium oxide prepared by the method of the present invention can be used as a raw material for preparing metal ruthenium. In addition, the cerium oxide produced by the process of the present invention can be used to produce SiO 2 moldings which facilitate the manufacture of metal bismuth and further processing and are well known to those skilled in the art.

術語"二氧化矽"在本發明內文中亦意指可包含游離及/ 或結合水的水性組成物。此外,此等組成物中亦可存在少量自該製備或純化源生之物質。在本發明上下文中,特別應參考高純度二氧化矽必需符合的要求,以便可以使用於要用之用途。 The term "cerium oxide" is also used in the context of the present invention to mean that it can include free and / Or an aqueous composition that binds water. In addition, a small amount of material derived from the source of the preparation or purification may be present in such compositions. In the context of the present invention, particular reference should be made to the requirements that must be met for high purity cerium oxide so that it can be used for the intended use.

根據本發明之待純化之二氧化矽可例如藉由沉澱反應自含矽酸鹽溶液(例如水玻璃)製得。 The cerium oxide to be purified according to the present invention can be obtained, for example, by a precipitation reaction from a cerium-containing solution (for example, water glass).

溶於水相之二氧化矽(特別是完全溶解的二氧化矽)的較佳沉澱方式較理想的是以酸化劑進行。溶於水相中之二氧化矽與酸化劑反應後(溶於水相中之二氧化矽較佳係添加於酸化劑中)得到沉澱物懸浮液。 A preferred mode of precipitation of the cerium oxide (especially fully dissolved cerium oxide) dissolved in the aqueous phase is preferably carried out with an acidifying agent. After the cerium oxide dissolved in the aqueous phase is reacted with the acidifying agent (the cerium oxide dissolved in the aqueous phase is preferably added to the acidifying agent) to obtain a precipitate suspension.

一項重要的製程特色係於二氧化矽製備之各個不同製程步驟期間控制二氧化矽及含有二氧化矽的反應介質之pH。 An important process characteristic is the control of the pH of the cerium oxide and the cerium oxide containing reaction medium during various process steps in the preparation of cerium oxide.

此較佳態樣中,初始進料及添加(較佳係逐滴添加)有溶於水相之二氧化矽(尤其是水玻璃)的沉澱物懸浮液必需始終為酸性。"酸性"被理解為pH低於6.5,尤其是低於5.0,較佳係低於3.5,更佳係低於2.5,且根據本發明係低於2.0至低於0.5。在此方面,控制pH以使得pH不會有太大變化而無法得到可再現之沉澱物懸浮液為目標。 若固定或實質固定pH是目標,則該pH應僅展現正/負1.0之變化範圍,尤其是正/負0.5,較佳係正/負0.2。 In this preferred embodiment, the initial charge and addition (preferably dropwise addition) of the precipitate suspension of the cerium oxide (especially water glass) dissolved in the aqueous phase must always be acidic. "Acid" is understood to mean a pH below 6.5, especially below 5.0, preferably below 3.5, more preferably below 2.5, and below 2.0 to below 0.5 according to the invention. In this regard, the pH is controlled such that the pH does not change too much to achieve a reproducible precipitate suspension. If the fixed or substantially fixed pH is the target, then the pH should only exhibit a range of positive/negative 1.0, especially positive/negative 0.5, preferably positive/negative 0.2.

在本發明特佳具體實施例中,初始進料及沉澱物懸浮液之pH始終保持低於2,較佳係低於1,更佳係低於0.5。另外亦較佳的情況是酸相對於鹼金屬矽酸鹽溶液的 存在量始終是明顯過量,以使得沉澱物懸浮液在任何時候的pH皆低於2。 In a particularly preferred embodiment of the invention, the pH of the initial feed and the suspension of the precipitate is maintained below 2, preferably below 1, and more preferably below 0.5. Also preferred is the acid relative to the alkali metal citrate solution. The amount present is always a significant excess so that the pH of the precipitate suspension is below 2 at any time.

在不受限於特定理論下,可假設極低pH可確保二氧化矽表面上有效地不含帶負電之游離SiO基團,麻煩之金屬離子可能結合於二氧化矽表面。 Without being bound by a particular theory, it can be assumed that an extremely low pH ensures that the surface of the ceria is effectively free of negatively charged free SiO groups, and that troublesome metal ions may bind to the ceria surface.

在極低pH下,該表面出乎意料的實際上帶正電,使得金屬陽離子被二氧化矽表面所排斥。若此等金屬離子隨後被洗出,只要pH極低,就可因此防止其累積於本發明二氧化矽表面上。若二氧化矽表面呈正電荷,則可額外地防止二氧化矽粒子附聚而形成雜質會累積的孔穴或間隙。 At very low pH, the surface is unexpectedly positively charged, causing the metal cation to be repelled by the cerium oxide surface. If such metal ions are subsequently washed out, as long as the pH is extremely low, it can thereby be prevented from accumulating on the surface of the ceria of the present invention. If the surface of the cerium oxide is positively charged, it is possible to additionally prevent agglomeration of the cerium oxide particles to form pores or gaps in which impurities may accumulate.

此情況下,此種電荷分離之性質使得二氧化矽(若移動的話)根據Maxwell氏電動力學規則產生電流信號,因此可以簡易方式由外部(不接觸的方式)偵測及/或測定二氧化矽品質。 In this case, the nature of such charge separation allows the ruthenium dioxide (if it is moved) to generate a current signal according to Maxwell's electrodynamic rules, so that the cerium oxide can be detected and/or measured externally (without contact) in a simple manner. quality.

特佳者是用以製備經純化二氧化矽(尤其是高純度二氧化矽)的製備方法,其包含以下步驟:a. 自pH小於2之酸化劑製備初始進料,較佳係小於1.5,更佳係小於1,最佳係小於0.5;b. 提供矽酸鹽溶液,特別有利的是將黏度設定於用以製備藉沉澱純化之氧化矽的特定黏度範圍內,較佳者尤其是黏度0.001至1000Pas,可根據製程藉由其他製程參數進一步加寬此黏度範圍-如下文所詳述;c. 將來自步驟b之矽酸鹽溶液添加至來自步驟a之 初始進料,使得形成之沉澱物懸浮液的pH始終保持低於2之值,較佳係低於1.5,更佳係低於1,且最佳係低於0.5;及d. 取出並洗滌所得之二氧化矽,洗滌介質具有低於2之pH,較佳係低於1.5,更佳係低於1,且最佳係低於0.5。 Particularly preferred is a process for preparing purified cerium oxide (especially high purity cerium oxide) comprising the steps of: a. preparing an initial charge from an acidulant having a pH of less than 2, preferably less than 1.5, More preferably less than 1, preferably less than 0.5; b. providing a citrate solution, it is particularly advantageous to set the viscosity within a specific viscosity range for preparing cerium oxide purified by precipitation, preferably especially 0.001 Up to 1000 Pas, the viscosity range can be further broadened by other process parameters according to the process - as detailed below; c. Adding the citrate solution from step b to step a The initial feed is such that the pH of the formed precipitate suspension is maintained below a value of 2, preferably less than 1.5, more preferably less than 1, and the optimum is less than 0.5; and d. The cerium oxide, the washing medium has a pH below 2, preferably less than 1.5, more preferably less than 1, and the optimum is less than 0.5.

在此方法之第一特佳變型中,較佳者係用以製備經純化氧化矽(尤其是高純度二氧化矽)的沉澱方法係以低黏度至中黏度的矽酸鹽溶液執行,使得步驟b可修改如下:b. 提供黏度為0.001至0.3Pas之矽酸鹽溶液在此方法之第二特佳變型中,較佳者可為用以製備經純化氧化矽(尤其是高純度二氧化矽)的沉澱方法係以高黏度至極高黏度的矽酸鹽溶液執行,使得步驟b可修改如下:b. 提供黏度為0.2至10000Pas之矽酸鹽溶液前文詳述之不同變化類型中,步驟a中,在沉澱容器中自酸化劑或酸化劑及水製備初始進料。水以蒸餾水或去礦質水較佳。品質可藉簡易之電導係數測量法根據已知標準(例如DIN)來偵測或決定。 In a first particularly preferred variant of the method, the preferred method for preparing purified cerium oxide (especially high purity cerium oxide) is carried out in a low viscosity to medium viscosity citrate solution such that the steps are b can be modified as follows: b. providing a citrate solution having a viscosity of 0.001 to 0.3 Pas. In a second particularly preferred variant of the method, preferably used to prepare purified cerium oxide (especially high purity cerium oxide) The precipitation method is carried out with a high viscosity to very high viscosity citrate solution, so that step b can be modified as follows: b. providing a citrate solution having a viscosity of 0.2 to 10000 Pas, among the different types of changes detailed above, in step a The initial charge is prepared from the acidifying agent or acidulant and water in a precipitation vessel. It is preferred that the water be distilled water or demineralized water. Quality can be detected or determined by a simple conductivity measurement method based on known standards such as DIN.

在本發明方法的所有變化型式中,不只是前文詳述之特佳具體實施例,所使用之酸化劑可為有機或無機酸,以礦物酸為佳,更佳者為濃縮或稀釋形式之鹽酸、磷酸、硝酸、硫酸、氯磺酸、硫醯氯、過氯酸、甲酸及/或乙酸或 前述酸之混合物。特佳者是前述無機酸。極特佳者係使用鹽酸,較佳係2至14N,更佳係2至12N,再更佳係2至10N,特佳係2至7N,且極特佳係3至6N;磷酸,較佳係2至59N,更佳係2至50N,再更佳係3至40N,特佳係3至30N,且極特佳係4至20N;硝酸,較佳係1至24N,更佳係1至20N,再更佳係1至15N,特佳係2至10N;硫酸,較佳係1至37N,更佳係1至30N,再更佳係2至20N,特佳係2至10N。極特佳者係使用濃硫酸。 In all variants of the process according to the invention, not only the preferred embodiments described in detail above, but also the acidifying agent used may be an organic or inorganic acid, preferably a mineral acid, more preferably a concentrated or diluted form of hydrochloric acid. , phosphoric acid, nitric acid, sulfuric acid, chlorosulfonic acid, thioindigo chloride, perchloric acid, formic acid and/or acetic acid or a mixture of the foregoing acids. Particularly preferred are the aforementioned inorganic acids. Very preferred is hydrochloric acid, preferably 2 to 14N, more preferably 2 to 12N, still more preferably 2 to 10N, particularly preferably 2 to 7N, and very excellent 3 to 6N; phosphoric acid, preferably 2 to 59N, more preferably 2 to 50N, still more preferably 3 to 40N, particularly preferably 3 to 30N, and extremely excellent 4 to 20N; nitric acid, preferably 1 to 24N, more preferably 1 to 20N, more preferably 1 to 15N, particularly preferably 2 to 10N; sulfuric acid, preferably 1 to 37N, more preferably 1 to 30N, still more preferably 2 to 20N, and particularly preferably 2 to 10N. Very good people use concentrated sulfuric acid.

酸化劑可使用一般稱為"工業級(technical grade)"的純度。熟習此技術者明瞭所使用之稀釋或未稀釋的酸化劑或酸化劑混合物應挾帶最低量之不會保持溶於進入製程之沉澱物懸浮液的水相中之雜質。在任一情況下,酸化劑應不具有任何會在酸性沉澱過程中與氧化矽一起沉澱的雜質,除非其可藉由添加之錯合劑或藉由控制pH而保持在沉澱物懸浮液中,或可以稍後之洗滌介質洗出。 The acidulant can be used in a purity generally referred to as "technical grade". It will be apparent to those skilled in the art that the diluted or undiluted acidifier or mixture of acidifiers employed should carry a minimum amount of impurities that do not remain soluble in the aqueous phase of the precipitate suspension entering the process. In either case, the acidulant should not have any impurities that would precipitate with the cerium oxide during the acidic precipitation unless it can be retained in the precipitate suspension by the addition of the wrong agent or by controlling the pH, or The washing medium is washed out later.

已用於沉澱之酸化劑可與亦使用於例如步驟d洗滌濾渣者相同。 The acidulant which has been used for precipitation can be the same as that which is also used, for example, in step d to wash the filter.

在此方法之較佳變化型式中,在步驟a中,不僅酸化劑,過氧化物亦添加至初始進料中,過氧化物在酸性條件下導致鈦(IV)離子呈黃色/橘色。更佳係過氧化氫或過氧二硫酸鉀。反應溶液之黃色/橘色使得在洗滌步驟d期間可極明確的察覺純化程度。 In a preferred variant of this process, in step a, not only the acidulant, but also the peroxide is added to the initial charge, which causes the titanium (IV) ions to be yellow/orange under acidic conditions. More preferably hydrogen peroxide or potassium peroxodisulfate. The yellow/orange color of the reaction solution allows a very clear degree of purification to be detected during the washing step d.

此因已發現鈦明確的構成在pH高於2時易附著於二 氧化矽的極持久雜質。已發現當黃色在d階段中消失時,所純化之氧化矽(尤其是二氧化矽)通常已達到理想純度,自此時起可以蒸餾水或去礦質水洗滌二氧化矽,直至達到中性pH的二氧化矽。為達到此種過氧化物指示劑功能,亦可在步驟b而不是步驟a,將過氧化物添加至水玻璃,或在步驟c中以第三物流方式添加。基本上,亦可僅在步驟c後且在步驟d前或在步驟d期間添加過氧化物。 This reason has been found that the clear composition of titanium tends to adhere to the second when the pH is higher than 2. Extremely long lasting impurities of cerium oxide. It has been found that when yellow disappears in stage d, the purified cerium oxide (especially cerium oxide) usually has reached the desired purity, from which it can be washed with distilled water or demineralized water until neutral pH is reached. Ceria. To achieve such a peroxide indicator function, peroxide can also be added to the water glass in step b instead of step a, or in a third stream in step c. Basically, it is also possible to add peroxide only after step c and before step d or during step d.

較佳者特別是在步驟a或b中添加過氧化物,因為此情況下可在指示劑功能外附帶的滿足其他的功能。在不受縛於特別理論下,可假設某些雜質-尤其是含碳者-藉由與過氧化物反應而氧化並自反應溶液移除。其他雜質藉氧化轉化成具有較佳溶解度且因而可洗出之形式。本發明沉澱方法因此具有優勢,不需要進行煅燒步驟,但此步驟當然可為選項。 Preference is given in particular to the addition of peroxides in step a or b, since in this case other functions can be provided in addition to the function of the indicator. Without being bound by a particular theory, it is assumed that certain impurities - especially those containing carbon - are oxidized by reaction with peroxide and removed from the reaction solution. Other impurities are converted by oxidation into a form having a better solubility and thus being washable. The precipitation process of the invention therefore has the advantage that no calcination step is required, but this step can of course be an option.

本發明方法之所有變化型式中,溶於水相之二氧化矽可較佳的為矽酸鹽水溶液,更佳係鹼金屬及/或鹼土金屬矽酸鹽溶液,最佳係水玻璃。該等溶液可於市面上購得,藉著將固體矽酸鹽液化製得,自二氧化矽及碳酸鈉製得,或例如直接自二氧化矽及氫氧化鈉及水於高溫下經由水熱法製得。水熱法因為可導致更清潔的沉澱二氧化矽而可能優於鈉鹼法。水熱法中之一缺點是可得到之模數的範圍受限;例如,SiO2對Na2O的模數最高達2,較佳模數為3至4;此外,水熱法之後的水玻璃通常需於沉澱之前濃縮。通常,熟習此技術者明瞭水玻璃本身之製造。 In all variations of the process of the present invention, the cerium oxide dissolved in the aqueous phase may preferably be an aqueous solution of citrate, more preferably an alkali metal and/or alkaline earth metal citrate solution, preferably water glass. These solutions are commercially available, obtained by liquefying solid citrate, prepared from cerium oxide and sodium carbonate, or, for example, directly from cerium oxide and sodium hydroxide and water at elevated temperatures via water heat. Made by law. The hydrothermal process may be superior to the sodium-base process because it can result in cleaner precipitation of ceria. One of the disadvantages of hydrothermal methods is that the range of available modules is limited; for example, SiO 2 has a modulus of up to 2 for Na 2 O, preferably 3 to 4; in addition, water after hydrothermal The glass usually needs to be concentrated before precipitation. In general, those skilled in the art will be aware of the manufacture of water glass itself.

於一備擇型式中,鹼金屬水玻璃(尤其是鈉水玻璃或鉀水玻璃)任意地經過濾,且隨之(若需要)濃縮。用以移除固體不溶成份之水玻璃或溶解的矽酸鹽水溶液之過濾可藉由本身係熟習此技術者已知之方法且使用熟習此技術者已知之裝置來進行。 In an alternative version, an alkali metal water glass (especially sodium water glass or potassium water glass) is optionally filtered and, if desired, concentrated. Filtration of the water glass or dissolved aqueous citrate solution for removing solid insoluble components can be carried out by a method known per se to those skilled in the art and using a device known to those skilled in the art.

所使用之矽酸鹽溶液較佳係具有1.5至4.5之模數(即金屬氧化物對二氧化矽的重量比),較佳係1.7至4.2,更佳係2至4.0。 The citrate solution used preferably has a modulus of from 1.5 to 4.5 (i.e., a weight ratio of metal oxide to cerium oxide), preferably from 1.7 to 4.2, more preferably from 2 to 4.0.

製造可使用於本發明之SiO2組成物的沉澱方法不需使用鉗合劑或離子交換劑管柱。亦可免除用以煅燒經純化之氧化矽的煅燒步驟。因此,本發明沉澱方法遠較先前技術方法簡易且較不昂貴。本發明沉澱方法之另一優點是可使用習用裝置執行。 The precipitation method which can be used for the SiO 2 composition of the present invention does not require the use of a chelating agent or an ion exchanger column. The calcination step for calcining the purified cerium oxide can also be dispensed with. Therefore, the precipitation method of the present invention is much simpler and less expensive than prior art methods. Another advantage of the precipitation process of the present invention is that it can be performed using conventional devices.

在沉澱前使用純化矽酸鹽溶液的離子交換劑及/或酸化劑並非必要,但對於矽酸鹽水溶液的品質而言可能是適合的。因此,鹼性矽酸鹽溶液亦可根據WO 2007/106860預先處理,以預先使硼及/或磷含量減至最少。為達此目的,鹼金屬矽酸鹽溶液(溶有氧化矽之水相)可以過渡金屬、鈣或鎂、鉬鹽或經鉬酸鹽修飾之離子交換劑處理,以使磷含量減至最少。沉澱之前,根據WO 2007/106860方法,鹼金屬矽酸鹽溶液可供應至本發明之在酸性條件(尤其是pH低於2)下的沉澱操作。然而,較理想的是在本發明方法中使用在沉澱前尚未以離子交換劑處理之酸化劑及矽酸鹽溶液。 It is not necessary to use an ion exchanger and/or an acidulant for purifying the citrate solution prior to precipitation, but may be suitable for the quality of the aqueous citrate solution. Thus, the alkaline citrate solution can also be pretreated according to WO 2007/106860 to minimize boron and/or phosphorus content in advance. To this end, an alkali metal ruthenate solution (an aqueous phase in which cerium oxide is dissolved) may be treated with a transition metal, calcium or magnesium, a molybdenum salt or a molybdate-modified ion exchanger to minimize the phosphorus content. Prior to precipitation, an alkali metal citrate solution can be supplied to the precipitation operation of the present invention under acidic conditions (especially pH below 2) according to the method of WO 2007/106860. However, it is desirable to use an acidifying agent and a phthalate solution which have not been treated with an ion exchanger prior to precipitation in the process of the present invention.

在特定具體實施例中,根據EP 0 504 467 B1方法,矽酸鹽溶液可在實際酸性的本發明沉澱之前以矽溶膠形式預處理。為達此目的,明確的將EP 0 504 467 B1整體揭示內容併入本發明文件中。藉EP 0 504 467 B1揭示方法製得之矽溶膠較佳係在根據EP 0 504 467 B1方法處理後再次完全溶解,之後提供至本發明酸性沉澱以得到本發明之純化的氧化矽。 In a particular embodiment, according to the method of EP 0 504 467 B1, the citrate solution can be pretreated in the form of a cerium sol prior to the actual acidic precipitation of the invention. For this purpose, the entire disclosure of EP 0 504 467 B1 is expressly incorporated into the present document. The oxime sol prepared by the process disclosed in EP 0 504 467 B1 is preferably completely dissolved again after treatment according to the method of EP 0 504 467 B1, and then supplied to the acidic precipitate of the invention to obtain the purified cerium oxide of the invention.

矽酸鹽溶液較佳係於酸性沉澱之前具有約至少10重量%或更高之二氧化矽含量。 The citrate solution preferably has a cerium oxide content of about at least 10% by weight or greater prior to acidic precipitation.

較佳係用於酸性沉澱之矽酸鹽溶液,尤其是鈉水玻璃,具有0.001至1000Pas之黏度,較佳係0.002至500Pas,尤其是0.01至300Pas,特佳係0.04至100Pas(於室溫,20℃)。矽酸鹽溶液之黏度可較佳地於10l/s剪切速率下測量,溫度較佳係20℃。 Preferably, the citrate solution for acidic precipitation, especially sodium water glass, has a viscosity of 0.001 to 1000 Pas, preferably 0.002 to 500 Pas, especially 0.01 to 300 Pas, and particularly preferably 0.04 to 100 Pas (at room temperature, 20 ° C). The viscosity of the citrate solution can be preferably measured at a shear rate of 10 l/s, and the temperature is preferably 20 °C.

沉澱方法第一較佳變化型式之步驟b及/或c中,提供黏度為0.001至0.3Pas,較佳係0.001至0.2Pas,更佳係0.002至0.19Pas,尤其是0.01至0.18Pas且特佳是0.04至0.16Pas且極特佳係0.05至0.15Pas之矽酸鹽溶液。矽酸鹽溶液之黏度可較佳地於10l/s剪切速率下測量,溫度較佳係20℃。亦可使用數種矽酸鹽溶液之混合物。 The step b and/or c of the first preferred variation of the precipitation method provides a viscosity of from 0.001 to 0.3 Pas, preferably from 0.001 to 0.2 Pas, more preferably from 0.002 to 0.19 Pas, especially from 0.01 to 0.18 Pas. It is a citrate solution of 0.04 to 0.16 Pas and extremely excellent 0.05 to 0.15 Pas. The viscosity of the citrate solution can be preferably measured at a shear rate of 10 l/s, and the temperature is preferably 20 °C. Mixtures of several citrate solutions can also be used.

沉澱方法第一較佳變化型式之步驟b及/或c中,提供黏度為0.2至1000Pas,較佳係0.3至700Pas,更佳係0.4至600Pas,尤其是0.4至100Pas且特佳是0.4至10 Pas且極特佳係0.5至5Pas之矽酸鹽溶液。矽酸鹽溶液之黏度可較佳地於10l/s剪切速率下測量,溫度較佳係20°C。 In step b and/or c of the first preferred variant of the precipitation method, a viscosity of from 0.2 to 1000 Pas, preferably from 0.3 to 700 Pas, more preferably from 0.4 to 600 Pas, especially from 0.4 to 100 Pas and particularly preferably from 0.4 to 10 is provided. Pas is extremely excellent in a 0.5 to 5 Pas citrate solution. The viscosity of the citrate solution can be preferably measured at a shear rate of 10 l/s, and the temperature is preferably 20 °C.

沉澱方法之兩較佳變化型式的主要態樣之步驟c中,將來自步驟b之矽酸鹽溶液添加至初始進料,二氧化矽因而沉澱。此處應確定始終存在過量之酸化劑。矽酸鹽溶液因此係以一種使得反應溶液之pH始終小於2,較佳係小於1.5,更佳係小於1,再更佳係小於0.5且特佳是0.01至0.5之方式添加。若需要,則可另外添加酸化劑。反應溶液溫度在添加矽酸鹽溶液期間藉由加熱或冷卻沉澱容器而保持在20至95℃,較佳係30至90℃,更佳係40至80℃。 In step c of the main aspect of the two preferred variants of the precipitation process, the citrate solution from step b is added to the initial charge, and the cerium oxide is thus precipitated. It should be determined here that there is always an excess of acidifier. The citrate solution is thus added in such a manner that the pH of the reaction solution is always less than 2, preferably less than 1.5, more preferably less than 1, more preferably less than 0.5 and particularly preferably from 0.01 to 0.5. An acidifying agent may be additionally added if necessary. The temperature of the reaction solution is maintained at 20 to 95 ° C, preferably 30 to 90 ° C, more preferably 40 to 80 ° C, by heating or cooling the precipitation vessel during the addition of the niobate solution.

當矽酸鹽溶液以液滴形式進入初始進料及/或沉澱物懸浮液時,得到具有特佳過濾性之沉澱物。較佳具體實施例中,因而要謹慎的使矽酸鹽溶液於液滴形式下進入初始進料及/或沉澱物懸浮液。此可藉由例如將矽酸鹽溶液以逐滴添加方式導入初始進料而達成。此可包括提供計量設備於初始進料/沉澱物懸浮液之外側且/或浸入初始進料/沉澱物懸浮液中。 When the citrate solution enters the initial feed and/or the precipitate suspension as droplets, a precipitate with excellent filterability is obtained. In a preferred embodiment, it is therefore prudent to have the citrate solution enter the initial charge and/or precipitate suspension in the form of droplets. This can be achieved, for example, by introducing the citrate solution into the initial charge in a dropwise addition. This may include providing a metering device on the outside of the initial feed/precipitate suspension and/or immersing in the initial feed/precipitate suspension.

在第一特佳變化型式中,即是使用低黏度水玻璃的方法中,已發現特別有利的是將初始進料/沉澱物懸浮液設定於移動中,例如藉由攪拌或泵動循環,使得在由沉澱容器半徑的一半±5cm及在反應表面下方10cm之反應溶液的表面所界定的區域中測量之流速係0.001至10m/s,較 佳係0.005至8m/s,更佳係0.01至5m/s,極特別0.01至4m/s,特佳係0.01至2m/s且極特佳係0.01至1m/s。 In a first particularly preferred variant, i.e. a method using low viscosity water glass, it has been found to be particularly advantageous to set the initial feed/precipitate suspension to movement, for example by stirring or pumping cycles. The flow rate measured in the region defined by the half of the radius of the precipitation vessel ± 5 cm and the surface of the reaction solution 10 cm below the reaction surface is 0.001 to 10 m/s, Preferably, it is from 0.005 to 8 m/s, more preferably from 0.01 to 5 m/s, very particularly from 0.01 to 4 m/s, particularly preferably from 0.01 to 2 m/s and very particularly preferably from 0.01 to 1 m/s.

在不受縛於特定理論下,可假設因為低流速,所有進入之矽酸鹽溶液在進入初始進料/沉澱物懸浮液之後的瞬間僅相當低程度的被擾亂。此種現象造成進入之矽酸鹽溶液液滴或矽酸鹽溶液流的外殼層在雜質可被封包於粒子內部之前快速膠凝。初始進料/沉澱物懸浮液之流速的最佳選擇因而使得所得產物之純度得以改善。 Without being bound by a particular theory, it can be assumed that all of the incoming citrate solution is only disturbed to a relatively low degree at the instant after entering the initial feed/precipitate suspension due to the low flow rate. This phenomenon causes the outer layer of the citrate solution droplet or the citrate solution stream to gel rapidly before the impurities can be encapsulated inside the particle. The optimum choice of flow rate for the initial feed/precipitate suspension thus results in improved purity of the resulting product.

藉由最佳流速與導入極實質上液滴形式之矽酸鹽溶液的組合,可再次增強此效果,故沉澱方法之一較佳的具體實施例係其中於一流速下將液滴形式矽酸鹽溶液導入初始進料/沉澱物懸浮液,而該流速係在由沉澱容器半徑的一半±5cm及在反應表面下方10cm之反應溶液的表面所界定的區域"d"中測量之流速,該流速為0.001至10m/s,較佳係0.005至8m/s,更佳係0.01至5m/s,極特別0.01至4m/s,特佳係0.01至2m/s且極特佳係0.01至1m/s。依此方式,亦可得到具有極佳過濾性的二氧化矽粒子。相反地,在初始進料/沉澱物懸浮液中存有高流速之方法中,額外地形成極細粒子。 This effect can be re-enhanced by the combination of the optimum flow rate and the ceric acid solution in the form of a substantially droplet of the introduction electrode, so a preferred embodiment of one of the precipitation methods is one in which the droplet form is tannic acid at a flow rate. The salt solution is introduced into the initial feed/precipitate suspension at a flow rate measured in the region "d" defined by the surface of the reaction vessel by half ± 5 cm of the radius of the precipitation vessel and 10 cm below the reaction surface. It is 0.001 to 10 m/s, preferably 0.005 to 8 m/s, more preferably 0.01 to 5 m/s, very particularly 0.01 to 4 m/s, particularly preferably 0.01 to 2 m/s, and extremely excellent 0.01 to 1 m/ s. In this way, cerium oxide particles having excellent filterability can also be obtained. Conversely, in the method of high flow rate in the initial feed/precipitate suspension, very fine particles are additionally formed.

在沉澱方法之另一較佳具體實施例中,即,當使用高黏度水玻璃時,逐滴添加矽酸鹽溶液之結果亦為具有良好過濾性的特純沉澱物。在不受縛於特別理論下,可假設矽酸鹽溶液之高黏度連同pH在步驟c後造成具有良好過濾 性之沉澱物,且僅有極低濃度(若有)之雜質摻入二氧化矽粒子內部腔洞內,因為高黏度使逐滴添加之矽酸鹽溶液實質保持液滴形式,表示在液滴表面開始膠凝/結晶之前液滴不會細密分布。所使用之矽酸鹽溶液可較佳的為前文詳細定義之鹼金屬及/或鹼土金屬矽酸鹽溶液,較佳係使用鹼金屬矽酸鹽溶液,特佳係使用矽酸鈉(水玻璃)及/或矽酸鉀溶液。亦可使用二或更多種矽酸鹽溶液之混合物。鹼金屬矽酸鹽溶液具有鹼金屬離子可藉洗除而輕易移除的優點。黏度可例如藉由將市售矽酸鹽溶液濃縮或藉由將矽酸鹽溶於水中而加以調整。 In another preferred embodiment of the precipitation process, i.e., when high viscosity water glass is used, the result of the dropwise addition of the citrate solution is also a particularly pure precipitate having good filterability. Without being bound by special theory, it can be assumed that the high viscosity of the citrate solution, together with the pH, results in good filtration after step c. Sediment, and only very low concentrations (if any) of impurities are incorporated into the internal cavity of the cerium oxide particles, because the high viscosity makes the dropwise addition of the citrate solution substantially in the form of droplets, expressed in droplets The droplets are not finely distributed before the surface begins to gel/crystallize. The citrate solution used may preferably be an alkali metal and/or alkaline earth metal citrate solution as defined in the foregoing, preferably an alkali metal citrate solution, and particularly preferably sodium citrate (water glass). And / or potassium citrate solution. Mixtures of two or more citrate solutions can also be used. The alkali metal ruthenate solution has the advantage that the alkali metal ions can be easily removed by washing. Viscosity can be adjusted, for example, by concentrating a commercially available citrate solution or by dissolving citrate in water.

如前文所說明,適當的選擇矽酸鹽溶液黏度及/或攪拌速度,因為得到具有特定形狀之粒子,使得粒子的過濾性得到改善。因此,較佳係經純化之氧化矽粒子,尤其是二氧化矽粒子,較佳具有0.1至10mm之外徑,更佳係0.3至9mm且最佳係2至8mm。本發明第一個特定具體實施例中,此等二氧化矽粒子具環狀,即,中間有洞,因此形狀等同於小型花托,本文亦稱為"甜甜圈"。環狀粒子可呈現實質圓形或較橢圓形狀。 As described above, the viscosity and/or the stirring speed of the citrate solution are appropriately selected because the particles having a specific shape are obtained, so that the filterability of the particles is improved. Accordingly, it is preferred that the purified cerium oxide particles, especially the cerium oxide particles, preferably have an outer diameter of from 0.1 to 10 mm, more preferably from 0.3 to 9 mm, and most preferably from 2 to 8 mm. In a first particular embodiment of the invention, the cerium oxide particles are annular, i.e., have a hole in the middle, and thus have a shape equivalent to a small receptacle, also referred to herein as a "doughnut." The annular particles can assume a substantially circular or more elliptical shape.

本發明沉澱方法之第二明確具體實施例中,此等二氧化矽粒子具有等同於"香菇頭"或"水母"之形狀。換言之,不是前述"甜甜圈"狀粒子的孔洞,在環狀基本結構之中間中有一層二氧化矽(薄的較佳,即較環狀部分薄),一側彎曲,且跨經該"環"內部開口。若將此等粒子曲面朝下的放在地上且由上方垂直往下看,則該粒子會對應於具有彎 曲基部、較實心(即較厚)上緣及彎曲區中稍薄基部的盤子。 In a second specific embodiment of the precipitation method of the present invention, the cerium oxide particles have a shape equivalent to "champignon head" or "jellyfish". In other words, not the pores of the aforementioned "doughnut"-like particles, in the middle of the annular basic structure, there is a layer of cerium oxide (thin thin, that is, thinner than the annular portion), one side is curved, and traverses the "" Ring "internal opening. If the particle surfaces are placed face down on the ground and viewed vertically from above, the particles will correspond to having a bend A curved base, a solider (ie thicker) upper edge and a slightly thinner base in the curved zone.

在不受縛於特別理論下,可假設初始進料/反應溶液中之酸性條件連同矽酸鹽溶液之逐滴添加不僅造成初始進料/沉澱物懸浮液之黏度及流速,亦使矽酸鹽溶液液滴與酸接觸之表面立即開始膠凝/沉澱,同時因為液滴在反應溶液/初始進料中移動之結果,造成液滴變形。根據反應條件,在液滴移動較慢的情況下,明顯的形成"香菇頭"形粒子;相對的,若液滴移動較快,則形成"甜甜圈"形粒子。 Without being bound by a particular theory, it can be assumed that the acidic conditions in the initial feed/reaction solution, along with the dropwise addition of the citrate solution, not only cause the viscosity and flow rate of the initial feed/precipitate suspension, but also the citrate. The surface of the solution droplets in contact with the acid immediately begins to gel/precipitate, and as a result of the droplets moving in the reaction solution/initial feed, the droplets are deformed. According to the reaction conditions, in the case where the droplet movement is slow, the "spice mushroom"-shaped particles are clearly formed; in contrast, if the droplet moves faster, a "doughnut"-shaped particle is formed.

自沉澱物懸浮液之其餘組份取出沉澱後得到之二氧化矽。根據本發明,此係連續或半連續的進行。 The cerium oxide obtained after precipitation was taken out from the remaining components of the precipitate suspension. According to the invention, this is carried out continuously or semi-continuously.

"半連續的"意指在規則時間間隔下,將沉澱製得之二氧化矽輸送至洗滌區,於此處進行洗滌。此情況下,可繼續進行沉澱反應。 "Semi-continuous" means that the precipitated cerium oxide is transported to a washing zone at regular intervals where it is washed. In this case, the precipitation reaction can be continued.

例如,沉澱可進行至沉澱二氧化矽已於沉澱容器中達到最小高度,之後將一部分沉澱之二氧化矽輸送至洗滌區。 For example, the precipitation can be carried out until the precipitated cerium oxide has reached a minimum height in the precipitation vessel, after which a portion of the precipitated cerium oxide is transported to the washing zone.

連續法中,二氧化矽持續地輸送至洗滌區,此情況下,二氧化矽沉澱亦可進行直到沉澱容器中二氧化矽沉澱至最小高度。同時,二氧化矽可較佳地以固定速率添加。 In the continuous process, cerium oxide is continuously transported to the scrubbing zone, in which case cerium oxide precipitation can also be carried out until the cerium oxide precipitates in the precipitation vessel to a minimum height. At the same time, cerium oxide can be preferably added at a fixed rate.

此處可藉機械裝置進行輸送,例如藉由刮刀,此情況下,沉澱之二氧化矽係經由可任意關閉之孔口輸入洗滌區。亦可任意地,使用常離心機以進行移出。 Here, the transport can be carried out by means of a mechanical device, for example by means of a doctor blade, in which case the precipitated cerium oxide is fed into the washing zone via an arbitrarily closed orifice. Optionally, a conventional centrifuge can be used for removal.

在沉澱容器中,此情況下可形成上清液,可藉溢流而任意的移除。 In the precipitation vessel, in this case a supernatant can be formed which can be arbitrarily removed by overflow.

將沉澱物輸送至洗滌區後,將其洗滌,應以適當之洗滌介質確保洗滌開始時之洗滌介質的pH小於2,較佳係小於1.5,更佳係小於1,再更佳係0.5且特佳是0.01至0.5。 After the precipitate is transported to the washing zone, it is washed, and the appropriate washing medium should be used to ensure that the pH of the washing medium at the start of washing is less than 2, preferably less than 1.5, more preferably less than 1, and even more preferably 0.5. Good is 0.01 to 0.5.

洗滌介質可較佳的包含有機及/或無機水溶性酸,例如前述酸或反丁烯二酸、草酸、甲酸、乙酸或熟習此技術者已知之其他有機酸,若其無法以高純度水完全移除,則其本身亦不會造成經純化之氧化矽的污染。因此,通常,較佳係所有的有機水溶性酸,尤其是由元素C、H及O構成,同時作為酸化劑及洗滌介質兩者,因此其本身不會造成後續還原步驟的污染。較佳係步驟a及c所使用之酸化劑或其混合物係於稀釋或未稀釋形式下使用。 The washing medium may preferably comprise an organic and/or inorganic water-soluble acid, such as the aforementioned acid or fumaric acid, oxalic acid, formic acid, acetic acid or other organic acids known to those skilled in the art, if it is not completely purified in high purity water. Removal will not cause contamination of the purified cerium oxide by itself. Thus, in general, it is preferred that all of the organic water-soluble acids, especially consisting of the elements C, H and O, act both as an acidifying agent and a washing medium, and thus do not themselves cause contamination of the subsequent reduction step. Preferably, the acidifying agent or mixtures thereof used in steps a and c are used in diluted or undiluted form.

若需要,洗滌介質可亦包含水與有機溶劑之混合物。 適當之溶劑係高純度之醇,諸如甲醇或乙醇。任何可能之酯化皆不干擾後續之還原成矽。 The washing medium may also comprise a mixture of water and an organic solvent, if desired. Suitable solvents are high purity alcohols such as methanol or ethanol. Any possible esterification does not interfere with subsequent reduction to hydrazine.

水相較佳係不含任何有機溶劑,諸如醇類及/或任何有機聚合物物質。 The aqueous phase is preferably free of any organic solvents such as alcohols and/or any organic polymeric materials.

本發明方法中,一般並非絕對要在該沉澱物懸浮液中或在純化期間添加鉗合劑。話雖如此,然本發明亦函蓋一種將金屬錯合劑諸如EDTA添加至沉澱物懸浮液或添加至洗滌介質以使酸可溶性金屬錯合物安定化之方法。因此,可任意添加鉗合試劑於洗滌介質,或使沉澱的二氧化矽在 包含鉗合試劑之具有對應之pH小於2,較佳小於1.5,更佳小於1,再更佳0.5且特佳是0.01至0.5之洗滌介質中攪拌。然而,使用酸性洗滌介質之洗滌較佳係在移除二氧化矽沉澱物後且未執行任何進一步的步驟前下立即進行。 In the process of the invention, it is generally not absolutely necessary to add a chelating agent in the suspension of the precipitate or during the purification. Having said that, the present invention also contemplates a method of adding a metal complexing agent such as EDTA to a precipitate suspension or to a washing medium to stabilize the acid soluble metal complex. Therefore, the clamping reagent can be arbitrarily added to the washing medium, or the precipitated cerium oxide can be Stirring is carried out in a wash medium comprising a suitable reagent having a pH of less than 2, preferably less than 1.5, more preferably less than 1, more preferably 0.5 and particularly preferably from 0.01 to 0.5. However, the washing using an acidic washing medium is preferably carried out immediately after removal of the ceria precipitate and without performing any further steps.

亦可添加過氧化物以進行顏色標記,作為不需要之金屬雜質的"指示劑"。例如,氫過氧化物可添加至沉澱物懸浮液或洗滌介質中,以藉由顏色確認鈦雜質之存在。標記通常亦可使用其他在後續還原過程中不會造成麻煩的有機錯合劑。此等通常是所有基於元素C、H及O之錯合劑;元素N可適當的亦存在於錯合劑中,例如用以形成氮化矽,在後來的製程中再次有利地分解。 Peroxides can also be added for color labeling as an "indicator" for unwanted metal impurities. For example, a hydroperoxide can be added to the precipitate suspension or wash medium to confirm the presence of titanium impurities by color. Markers can also generally use other organic binders that do not cause trouble during subsequent reductions. These are generally all complexing agents based on the elements C, H and O; the element N may suitably also be present in the tweaking agent, for example to form tantalum nitride, which is advantageously decomposed again in subsequent processes.

洗滌係持續到二氧化矽具有所需純度。此可例如藉由洗滌懸浮液含有過氧化物且目測不再展現任何黃色而得到確認。若本發明沉澱方法在不添加過氧化物(與Ti(IV)離子形成黃色/橙色化合物)下執行,則可在每個洗滌步驟取出小量洗滌懸浮液試樣且與適當之過氧化物摻合。此操作持續至所取得之試樣在添加過氧化物後於目測下不再展現黃色/橙色。此情況下,應確定洗滌介質之pH到此時應小於2,較佳係小於1.5,更佳係小於1,再更佳係0.5且特佳是0.01至0.5,經純化之氧化矽,尤其是二氧化矽,因而亦然。 The scrubbing system continues until the cerium oxide has the desired purity. This can be confirmed, for example, by the washing suspension containing peroxide and visually no longer exhibiting any yellow color. If the precipitation method of the present invention is carried out without the addition of peroxide (forming a yellow/orange compound with Ti(IV) ions), a small sample of the wash suspension can be taken at each wash step and mixed with a suitable peroxide. Hehe. This operation was continued until the obtained sample no longer exhibited yellow/orange color under visual conditions after the addition of the peroxide. In this case, it should be determined that the pH of the washing medium should be less than 2, preferably less than 1.5, more preferably less than 1, more preferably 0.5 and particularly preferably 0.01 to 0.5, and purified cerium oxide, especially Ceria is also the same.

依此方式洗滌及純化之二氧化矽較佳係進一步以蒸餾水或去礦質水洗滌,直至所得二氧化矽之pH介於0至7.5範圍內,且/或洗滌懸浮液之電導係數係小於或等於 100μS/cm,較佳係小於或等於10μS/cm,更佳係小於或等於5μS/cm。此時之pH可更佳係在0.5至4.0範圍內,較佳係0.6至3.5,尤其是自0.7至3.0,更佳係1.0至2.5。此處亦可使用含有有機酸之洗滌介質。此可確定黏附於二氧化矽之任何麻煩之酸殘留物皆已充分移除。 The cerium oxide washed and purified in this manner is preferably further washed with distilled water or demineralized water until the pH of the obtained cerium oxide is in the range of 0 to 7.5, and/or the conductance coefficient of the washing suspension is less than or equal to 100 μS/cm, preferably less than or equal to 10 μS/cm, more preferably less than or equal to 5 μS/cm. The pH at this time may more preferably be in the range of 0.5 to 4.0, preferably 0.6 to 3.5, especially from 0.7 to 3.0, more preferably 1.0 to 2.5. Washing media containing organic acids can also be used herein. This confirms that any troublesome acid residue adhering to the cerium oxide has been sufficiently removed.

此洗滌操作可較佳的在第二或更進一步之洗滌區中進行。是故,執行該製程時,可提供至少兩個洗滌區,待洗滌之二氧化矽係連續或半連續地通過進入該等洗滌區,第一洗滌區中所使用之洗滌介質具有較第二洗滌區中使用的洗滌介質低的pH。在本發明上下文中,待洗滌之二氧化矽可藉前文詳述方法輸送至第二或更進一步之洗滌區。 This washing operation can preferably be carried out in a second or further washing zone. Therefore, when the process is performed, at least two washing zones may be provided, and the cerium oxide to be washed is continuously or semi-continuously passed into the washing zones, and the washing medium used in the first washing zone has a second washing. The washing medium used in the zone has a low pH. In the context of the present invention, the cerium oxide to be washed can be delivered to the second or further washing zone by the method detailed above.

較佳配置中,導入用以洗滌二氧化矽之洗滌介質,通經該二氧化矽,流速較佳係0.001至100m/s,較佳係0.001至30m/s,特佳係0.005至20m/s,尤其較佳係0.01至15m/s,極特別,較佳係0.1至10m/s,明確的說,較佳係0.5至7m/s且極特佳係2至5m/s。依此方式,二氧化矽粒子亦能具有極佳過濾性。相反地,在高流速下,該初始進料中另外形成極細粒子,此等粒子造成雙峰曲線,在後來的步驟中模塑時,特別有利於模塑物之穩定性。 In a preferred embodiment, the washing medium for washing the cerium oxide is introduced, and the flow rate is preferably 0.001 to 100 m/s, preferably 0.001 to 30 m/s, and particularly preferably 0.005 to 20 m/s. It is particularly preferably 0.01 to 15 m/s, very particular, preferably 0.1 to 10 m/s, and specifically, preferably 0.5 to 7 m/s and very particularly preferably 2 to 5 m/s. In this way, the cerium oxide particles can also have excellent filterability. Conversely, at high flow rates, very fine particles are additionally formed in the initial charge, and such particles cause a bimodal curve which is particularly advantageous for molding in the subsequent step.

而且,用以洗滌二氧化矽之洗滌介質之體積流速相對於待洗滌之二氧化矽之體積的比例可較佳的在1至1000範圍中,更佳係在2至100且特佳是在3至10範圍中。 Moreover, the ratio of the volume flow rate of the washing medium for washing the cerium oxide to the volume of the cerium oxide to be washed may preferably be in the range of 1 to 1000, more preferably 2 to 100 and particularly preferably 3 To the range of 10.

此外,洗滌較佳可使用高剪切進行,此情況下,沉澱 所得之二氧化矽粒子的平均粒徑減低至少10%,較佳係30%,更佳係至少50%。在本發明上下文中,平均粒徑可例如根據ISO 13320-1(1999),Particle size analysis-Laser diffraction methods-Part 1:General principles)測定,較佳係以體積平均表示。 In addition, washing is preferably carried out using high shear, in which case precipitation The average particle size of the obtained cerium oxide particles is reduced by at least 10%, preferably by 30%, more preferably by at least 50%. In the context of the present invention, the average particle size can be determined, for example, according to ISO 13320-1 (1999), Particle size analysis - Laser diffraction methods - Part 1: General principles, preferably expressed by volume average.

執行該製程時,洗滌區可具有較佳最多3m之高度,更佳係最多2m。此配置尤其有利於執行其中沉澱之二氧化矽於高速率下進行洗滌的情況,較佳係達成粒徑的縮小。 When the process is performed, the washing zone may have a height of preferably up to 3 m, more preferably up to 2 m. This configuration is particularly advantageous in the case where the precipitated cerium oxide is washed at a high rate, and it is preferred to achieve a reduction in particle size.

前文詳述之洗滌方法較佳參數可適用於(若為串級執行此步驟)例如2、3或更多階段,單一階段,較佳係稍後洗滌階段,更佳係最後洗滌階段,至少2或更多洗滌階法或所有洗滌階段。 The preferred parameters of the washing method detailed above may be applied (if this step is performed in cascade), for example, 2, 3 or more stages, a single stage, preferably a later washing stage, and more preferably a final washing stage, at least 2 Or more washing steps or all washing stages.

較佳具體實施例中,該洗滌可藉由將洗滌介質自下方朝向於狹窄篩籃中的沉澱物流動而進行。 In a preferred embodiment, the washing can be carried out by flowing the washing medium from below towards the sediment in the narrow screen basket.

移除可藉習用措施進行,此等措施係熟習此技術者所充分熟知,諸如過濾、傾析、離心及/或沉降,其限制條件為此等措施不會使經酸沉澱經純化之二氧化矽的純度再度變低。 Removal can be carried out by customary measures, which are well known to those skilled in the art, such as filtration, decantation, centrifugation, and/or sedimentation, with limitations such that such measures do not allow acid precipitation to be purified by oxidation. The purity of hydrazine is again low.

執行本發明方法之工廠在下文中參考示意圖加以說明,但不限制本發明。 The factory for carrying out the method of the present invention is hereinafter described with reference to the schematic drawings, but does not limit the invention.

10‧‧‧第二洗滌區 10‧‧‧Second wash area

11‧‧‧入口 11‧‧‧ Entrance

12‧‧‧出口 12‧‧‧Export

13‧‧‧出口 13‧‧‧Export

14‧‧‧第三洗滌區 14‧‧‧ third wash area

15‧‧‧入口 15‧‧‧ entrance

16‧‧‧出口 16‧‧‧Export

17‧‧‧出口 17‧‧‧Export

1‧‧‧沉澱區 1‧‧‧Precipitation area

2‧‧‧入口 2‧‧‧ entrance

3‧‧‧進料管 3‧‧‧ Feeding tube

4‧‧‧出口 4‧‧‧Export

5‧‧‧出口 5‧‧‧Export

6‧‧‧第一洗滌區 6‧‧‧First wash area

7‧‧‧入口 7‧‧‧ entrance

8‧‧‧出口 8‧‧‧Export

9‧‧‧出口 9‧‧‧Export

圖1顯示用以執行本發明方法之工廠。 Figure 1 shows a factory for carrying out the process of the invention.

圖1顯示具有沉澱區1之工廠,沉澱物係經入口2導入該區內。所示配置中,沉澱物係自底部導入該沉澱區1內,沉澱物具有小於2之pH。經由另一進料管3,自頂部導入矽酸鹽溶液,可建立前文所詳述之流速,例如,經由將沉澱物添加至沉澱區1。同時,如前文所詳述般,形成固體二氧化矽粒子。經出口4自沉澱區取出過量沉澱物。所沉澱之二氧化矽粒子經由出口5自沉澱區1連續或半連續的輸送至第一洗滌區6。因此,沉澱區1可包含刮板或類似之內部構件,但此等構件必需不會造成沉澱之二氧化矽的污染。是故,此等內部構件尤其是刮板係由自二氧化矽製備矽的過程中取出的材料製得,因此可被容受。此等內部構件未顯示於示意圖1中。 Figure 1 shows a plant with a zone of precipitation 1 into which the precipitate is introduced via inlet 2. In the configuration shown, the precipitate is introduced into the precipitation zone 1 from the bottom, and the precipitate has a pH of less than 2. The flow rate as detailed above can be established by introducing a citrate solution from the top via another feed tube 3, for example, by adding a precipitate to the precipitation zone 1. At the same time, solid cerium oxide particles are formed as detailed above. Excess precipitate was taken from the precipitation zone via outlet 4. The precipitated cerium oxide particles are continuously or semi-continuously transported from the precipitation zone 1 to the first washing zone 6 via the outlet 5. Thus, the precipitation zone 1 may contain squeegees or similar internal components, but such components must not cause contamination of the precipitated cerium oxide. Therefore, these internal members, especially the squeegee, are made of a material taken out from the process of preparing bismuth from cerium oxide, and thus can be accepted. These internal components are not shown in the schematic 1.

輸送至第一洗滌區6之二氧化矽粒子係以洗滌介質洗滌,洗滌介質之流速及體積較佳係根據前文詳述之參數加以選擇。在本發明上下文中,該洗滌介質較佳係具有小於2,較佳係小於1之pH。此外,可添加過氧化物作為顏色標記,以測量二氧化矽純度。在本發明上下文中,可調整二氧化矽之滯留時間,使得二氧化矽在輸送至第二或第三洗滌區之前不包含可由過氧化物測量出的鈦含量。在圖1所示之具體實施例中,洗滌介質經入口7自底部導入第一洗滌區6內,經出口8自第一洗滌區6之上方區域取出。 The cerium oxide particles delivered to the first washing zone 6 are washed with a washing medium, and the flow rate and volume of the washing medium are preferably selected according to the parameters detailed above. In the context of the present invention, the washing medium preferably has a pH of less than 2, preferably less than 1. In addition, peroxide can be added as a color marker to measure the purity of cerium oxide. In the context of the present invention, the residence time of the cerium oxide can be adjusted such that the cerium oxide does not contain the titanium content which can be measured by the peroxide before being transported to the second or third washing zone. In the particular embodiment illustrated in Figure 1, the wash medium is introduced into the first wash zone 6 from the bottom via inlet 7 and exits from the upper region of the first wash zone 6 via outlet 8.

在第一洗滌區6中純化之二氧化矽粒子經出口9輸送 至第二洗滌區10內,圖1所示工廠之第一洗滌區6同樣可包含用以達此目的之內部構件,未出示於圖中。在圖1所示之具體實施例中,洗滌介質經入口11自底部導入第二洗滌區10內,經出口12自第二洗滌區10之上方區域取出。第二洗滌區10中洗滌介質之pH可較佳的高於第一洗滌區6中所使用之洗滌介質的pH。同時,洗滌介質之流速及體積可較佳的根據前文詳述之參數加以選擇。 The cerium oxide particles purified in the first washing zone 6 are conveyed through the outlet 9. Within the second wash zone 10, the first wash zone 6 of the plant of Figure 1 may also contain internal components for this purpose, not shown. In the particular embodiment illustrated in Figure 1, the wash medium is introduced into the second wash zone 10 from the bottom via inlet 11 and exits from the upper region of the second wash zone 10 via outlet 12. The pH of the washing medium in the second washing zone 10 may preferably be higher than the pH of the washing medium used in the first washing zone 6. At the same time, the flow rate and volume of the washing medium can preferably be selected according to the parameters detailed above.

在第二洗滌區10中純化之二氧化矽粒子經出口13輸送至第三洗滌區14內,圖1所示工廠之第二洗滌區10同樣可包含用以達此目的之內部構件,未出示於圖中。在圖1所示之具體實施例中,洗滌介質經入口15自底部導入第三洗滌區14內,經出口16自第三洗滌區14之上方區域取出。第三洗滌區14中洗滌介質之pH可較佳的高於第二洗滌區10中所使用之洗滌介質的pH。同時,洗滌介質之流速及體積可較佳的根據前文詳述之參數加以選擇。 The cerium oxide particles purified in the second washing zone 10 are conveyed through the outlet 13 to the third washing zone 14, and the second washing zone 10 of the factory shown in Fig. 1 may also contain internal components for this purpose, not shown. In the picture. In the particular embodiment illustrated in Figure 1, the wash medium is introduced into the third wash zone 14 from the bottom via inlet 15 and exits from the upper region of the third wash zone 14 via outlet 16. The pH of the scrubbing medium in the third scrubbing zone 14 may preferably be higher than the pH of the scrubbing media used in the second scrubbing zone 10. At the same time, the flow rate and volume of the washing medium can preferably be selected according to the parameters detailed above.

所純化之二氧化矽可經由出口17自工廠取出。為輸送該等粒子,第三洗滌區14同樣可包含內部構件。 The purified cerium oxide can be taken out of the factory via the outlet 17. To transport the particles, the third wash zone 14 can likewise comprise internal components.

前文詳述之洗滌介質及沉澱物可藉習用方法加以純化並重複使用。特定配置中,第三洗滌區14之出口16可連接至第二洗滌區10之入口11。此外,第二洗滌區10之出口12可連接至第一洗滌區6之入口7。此配置使得洗滌介質可於特別有經濟價值的方式下使用。 The washing media and precipitates detailed above can be purified and reused by conventional methods. In a particular configuration, the outlet 16 of the third wash zone 14 can be coupled to the inlet 11 of the second wash zone 10. Furthermore, the outlet 12 of the second washing zone 10 can be connected to the inlet 7 of the first washing zone 6. This configuration allows the washing medium to be used in a particularly economical manner.

所得經純化之二氧化矽,尤其是高純度二氧化矽,可經乾燥,且進一步加工以將自組型SiO2組成物調整成具 有下文詳述之較佳比例的水。 The resulting purified cerium oxide, especially high purity cerium oxide, can be dried and further processed to adjust the self-assembled SiO 2 composition to water having a preferred ratio as detailed below.

令人驚異的是,本發明方法可產生二氧化矽組成物,可在無任何較大複雜度下取出高比例之水。例如,可留置水性SiO2以達到水之部分移除。水含量可令人驚異的呈現如下文描述之充分自組型SiO2材料的值。 Surprisingly, the process of the present invention produces a cerium oxide composition which can be removed in a high proportion of water without any significant complexity. For example, aqueous SiO 2 can be left in place to achieve partial removal of water. The water content can surprisingly present the value of a sufficiently self-assembled SiO 2 material as described below.

進一步乾燥可藉熟習此技術者已知之所有製程及裝置進行,例如帶式乾燥機、階式乾燥機、鼓式乾燥機等。 Further drying can be carried out by all processes and equipment known to those skilled in the art, such as belt dryers, step dryers, drum dryers and the like.

用以執行本發明方法之工廠具新穎性,因而亦形成本發明標的的一部分。 The plants used to carry out the process of the invention are novel and thus form part of the subject matter of the invention.

較佳工廠具有至少一個沉澱區,連接至矽酸鹽溶液之儲集容器,使得存在於儲集容器中之矽酸鹽溶液可自上方導入沉澱區,及至少一個洗滌區,沉澱區包含內部構件,較佳係至少一個刮板,可將固體輸送至沉澱區內,此固體可以受控方式自該區通過進入洗滌區內。 Preferably, the plant has at least one precipitation zone connected to the storage vessel of the citrate solution such that the citrate solution present in the storage vessel can be introduced into the precipitation zone from above, and at least one washing zone containing internal components Preferably, at least one squeegee is used to deliver solids to the precipitation zone, and the solids can pass from the zone into the wash zone in a controlled manner.

此外,該工廠可包含至少兩個排列成串級形式之洗滌區,此等區彼此連接使得固體可自第一洗滌區輸送至第二洗滌區。 In addition, the plant may comprise at least two wash zones arranged in a cascade form that are connected to each other such that solids can be transported from the first wash zone to the second wash zone.

令人驚異的是,經由本發明方法,可以特別簡易且有經濟效率之方式製得二氧化矽,且此二氧化矽可以特別簡易方式轉化成任何形狀之SiO2模塑物。可藉本發明方法製得之二氧化矽亦形成本發明標的之一部分。 Surprisingly, by means of the process according to the invention, cerium oxide can be produced in a particularly simple and economical manner, and this cerium oxide can be converted into SiO 2 mouldings of any shape in a particularly simple manner. The cerium oxide which can be obtained by the process of the invention also forms part of the subject matter of the invention.

在本發明上下文中,較佳二氧化矽值得注意的是具有寬幅粒徑分布。此外,該二氧化矽可具有雙峰或多峰型粒徑分布。粒徑分布可較佳的根據ISO 13320-1(1999), Particle size analysis-Laser diffraction methods-Part 1:General principles)測定。 In the context of the present invention, it is preferred that the cerium oxide has a broad particle size distribution. Further, the cerium oxide may have a bimodal or multimodal particle size distribution. The particle size distribution can preferably be according to ISO 13320-1 (1999), Particle size analysis-Laser diffraction methods-Part 1: General principles).

本發明二氧化矽可令人驚異的成形為特別牢固、安定之成形體。 The cerium oxide of the present invention can be surprisingly shaped into a particularly strong, stable shaped body.

在本發明上下文中,二氧化矽可俱備黏合劑且依習用方式壓縮成模塑物。令人驚異的是,該二氧化矽亦可為自組型系統,由此自組型二氧化矽構成之自由流動水性SiO2組成物可倒入模具內。該水性自組型SiO2組成物較佳係具有在0.1至4.0範圍內之pH,較佳係0.2至3.5,尤其是0.5至3.0,更佳係1.0至2.5。 In the context of the present invention, cerium oxide is available as a binder and is conventionally compressed into a molding. Surprisingly, the cerium oxide can also be a self-assembled system whereby the free-flowing aqueous SiO 2 composition of self-assembled cerium oxide can be poured into the mold. The aqueous self-assembled SiO 2 composition preferably has a pH in the range of from 0.1 to 4.0, preferably from 0.2 to 3.5, especially from 0.5 to 3.0, more preferably from 1.0 to 2.5.

此情況下,自由流動的水性SiO2組成物可導入具有所需尺寸之模具中且依任何所需方式分布。例如,該導入可手動或以機器使用分布器單元進行。經充填之模具可施以振動,以達到該水性SiO2組成物在模具中快速且均勻的分布。 In this case, the free flowing aqueous SiO 2 composition can be introduced into a mold of the desired size and distributed in any desired manner. For example, the import can be done manually or by machine using a distributor unit. The filled mold can be subjected to vibration to achieve a rapid and uniform distribution of the aqueous SiO 2 composition in the mold.

術語"SiO2組成物"意指包含SiO2而有不同比例之自由及/或結合水之組成物,唯二氧化矽縮合程度本身對此組成物並不重要。是故,術語"SiO2組成物"亦包括具有SiOH基團之化合物,一般亦可稱為聚矽酸(polysilicic acids)。 The term "SiO 2 composition" means a composition comprising SiO 2 in different proportions of free and/or bound water, the degree of condensation of the cerium oxide itself is not critical to this composition. Thus, the term "SiO 2 composition" also includes compounds having SiOH groups, which are also commonly referred to as polysilicic acids.

較有利於使用之水性SiO2組成物係自組型組成物。 術語"自組型"表示適用於本發明方法之水性SiO2組成物可逆向的自固化狀態轉化成自由流動狀態。同時,較佳係不會發生有任何明顯程度之持續性相分離,因而巨觀評估中 之水基本上為均勻的分佈在SiO2相中。然而,本文中應強調的是在微觀層面上當然存有兩個相。自由流動狀態意指在本發明內文中,水性SiO2組成物具有較佳最高30Pas之黏度,更佳係最高20Pas且特佳是最高7Pas,此係在製造組成物之後即刻(約在取樣後2分鐘)使用旋轉流變儀(在介於1及200〔l/s〕之間的剪切速率下操作)於約23℃測得。在10〔l/s〕剪切速率下,以約3分鐘時間進行導入。接著使用得自Thermo Haake之Rheostress黏度計以葉片轉子22(直徑22mm,5葉片)在1至2.2 106Pas的測量範圍內測定,黏度則為約5Pas。在1〔l/s〕剪切速率且其他設定值相同下測量,測得黏度為25Pas。 The aqueous SiO 2 composition which is more advantageous for use is a self-assembled composition. The term "self-set type" that applies to the method of the present invention an aqueous composition SiO 2 reversible self-cured state is converted into a free-flowing state. At the same time, it is preferred that there is no significant degree of sustained phase separation, and thus the water in the macroscopic evaluation is substantially uniformly distributed in the SiO 2 phase. However, it should be emphasized in this paper that there are of course two phases at the micro level. The free-flowing state means that in the context of the present invention, the aqueous SiO 2 composition has a viscosity of preferably up to 30 Pas, more preferably up to 20 Pas and particularly preferably up to 7 Pas, which is immediately after the preparation of the composition (about 2 after sampling) Minutes) were measured using a rotary rheometer (operating at a shear rate between 1 and 200 [l/s]) at about 23 °C. The introduction was carried out at a shear rate of 10 [l/s] for about 3 minutes. The blade rotor 22 (diameter 22 mm, 5 blades) was then measured using a Rheostress viscometer from Thermo Haake at a measurement range of 1 to 2.2 10 6 Pas with a viscosity of about 5 Pas. The measurement was carried out at a shear rate of 1 [l/s] and the other set values were the same, and the measured viscosity was 25 Pas.

水性SiO2組成物在較佳係至少30Pas,更佳係至少100Pas的起始黏度下處於固化態。此值係使用在旋轉流變儀之葉片轉子在約23℃及10〔l/s〕剪切速率下開始後1秒的流變儀測得的黏度值。 The aqueous SiO 2 composition is in a cured state at a starting viscosity of preferably at least 30 Pas, more preferably at least 100 Pas. This value is the viscosity value measured using a rheometer 1 second after the start of the blade rotor of the rotary rheometer at about 23 ° C and a shear rate of 10 [l/s].

較佳係固化水性SiO2組成物可藉成形剪切力作用下液化。為達此目的,可使用熟習此技術者熟知之習用方法及裝置,例如具有適當之工具幾何用以導入剪切力的混合器、攪拌單元或磨機。較佳裝置包括強力混合器(Eirich)、連續混合器或環形床混合器,例如得自Lödige;具有混合單元之攪拌容器,較佳係具有斜葉或齒盤;但亦可為磨機,尤其是膠體磨機或其他使用不同寬度之環形間隙及不同速度之轉子-定子系統。另外適用的有 以超音波為主之裝置及工具,尤其是超音波發生器,較佳係具有曲狀激發器之超音波來源,容許以特別簡易或界定方式將剪切力導入SiO2-水組成物內,造成其液化。特別有利的是此處工具不會產生特別之磨蝕。此超音波配置較佳係以非線性範圍操作。在本發明此態樣中水性SiO2組成物之液化所使用的裝置通常視液化所需之剪切力而決定。令人驚異之優點尤其可藉由剪切速率(以該工具之圓周速度記錄)在0.01至50m/s範圍內之裝置達成,尤其是0.1至20m/s範圍內,更佳係於1至10m/s範圍內。 若為超音波液化,則此速率可相當可能的達到音速之範圍。進行剪切所經歷的時間係視連續方法之剪切速率而定,可較佳的為0.01至90分鐘範圍內,更佳係0.1至30分鐘範圍內。 Preferably, the cured aqueous SiO 2 composition can be liquefied by forming shear forces. For this purpose, conventional methods and devices well known to those skilled in the art can be used, such as mixers, agitating units or mills having suitable tool geometries for introducing shear forces. Preferred means include an intensive mixer (Eirich), a continuous mixer or a toroidal bed mixer, such as from Lödige; a mixing vessel with a mixing unit, preferably with a slanted or toothed disc; but also a mill, especially It is a colloid mill or other rotor-stator system that uses annular gaps of different widths and different speeds. Also suitable for use are ultrasonic-based devices and tools, especially ultrasonic generators, preferably with a supersonic source of curved actuators, allowing shear forces to be introduced into SiO 2 -water in a particularly simple or defined manner. Inside the composition, causing it to liquefy. It is particularly advantageous that the tool here does not produce a particular abrasion. This ultrasonic configuration is preferably operated in a non-linear range. The apparatus used in the liquefaction of the aqueous SiO 2 composition in this aspect of the invention is generally determined by the shearing force required for liquefaction. The surprising advantages are achieved in particular by means of a shear rate (recorded at the peripheral speed of the tool) in the range from 0.01 to 50 m/s, in particular in the range from 0.1 to 20 m/s, more preferably from 1 to 10 m. /s range. In the case of ultrasonic liquefaction, this rate is quite likely to reach the range of the speed of sound. The time elapsed for shearing depends on the shear rate of the continuous process, and is preferably in the range of 0.01 to 90 minutes, more preferably in the range of 0.1 to 30 minutes.

為將水性SiO2組成物固化,可較佳的留置至少0.1分鐘,較佳至少2分鐘,尤其是20分鐘,更佳係至少1小時。本文中之用語"留置"較佳係指該組成物不暴露於任何剪切力下。此外,固化可例如藉由能量輸入,較佳係加熱或添加添加劑而進行或加速。此情況之添加劑可為熟習此技術者所熟知之所有交聯劑,例如矽烷,尤其是官能性矽烷,此情況下,在不限制本發明的情況下,例如,TEOS(Si(OC2H5)4;四乙氧基矽烷),其可有利地以平價且超高純度取得。添加劑亦可為帶來pH升高之物質,例如升高至較佳係在2.5至6.5範圍內之值,更佳係2.5至4,例如鹼性化合物,其可有利的使用氨水溶液,此較佳係於 模具鑄造後添加。 For curing the aqueous SiO 2 composition, it is preferably retained for at least 0.1 minutes, preferably at least 2 minutes, especially 20 minutes, more preferably at least 1 hour. As used herein, the term "indwelling" preferably means that the composition is not exposed to any shear forces. Furthermore, the curing can be carried out or accelerated, for example, by energy input, preferably by heating or adding an additive. The additives in this case may be all crosslinkers well known to those skilled in the art, such as decane, especially functional decane, in which case, without limiting the invention, for example, TEOS (Si(OC 2 H 5) 4 ; tetraethoxydecane), which can advantageously be obtained in a pure and ultra-high purity. The additive may also be a substance which brings about an increase in pH, for example, a value which is preferably in the range of 2.5 to 6.5, more preferably 2.5 to 4, such as a basic compound, which can advantageously use an aqueous ammonia solution, which is advantageous. The best is added after the mold is cast.

較佳之固化的水性SiO2組成物可具有在2至98重量%範圍內之水含量,尤其是20至85重量%,較佳係30至75重量%,更佳係40至65重量%。自由流動之SiO2組成物的水含量可在相同範圍內。 Preferably, the cured aqueous SiO 2 composition may have a water content in the range of from 2 to 98% by weight, especially from 20 to 85% by weight, preferably from 30 to 75% by weight, more preferably from 40 to 65% by weight. The water content of the free flowing SiO 2 composition can be in the same range.

在特定配置中,具有相對低水含量之SiO2組成物可與具有較高水含量之SiO2組成物混合,以達到前文詳述之水含量。用於此目的之SiO2組成物並非必然是自組型組成物,但其可個別地具有此性質。 In certain configurations, having a relatively low water content of SiO 2 composition can be mixed with the composition having a higher water content of SiO 2, in order to achieve the foregoing detailed description of the water content. The SiO 2 composition used for this purpose is not necessarily an self-assembled composition, but it may have this property individually.

此外,固化的水性SiO2組成物值得注意的是較佳pH小於5.0,較佳係小於4.0,尤其是小於3.5,較佳係小於3.0,更佳係小於2.5。 Further, it is noted that the cured aqueous SiO 2 composition preferably has a pH of less than 5.0, preferably less than 4.0, especially less than 3.5, preferably less than 3.0, more preferably less than 2.5.

可藉由pH大於0,較佳係大於0.5,更佳係大於1.0之固化的水性SiO2組成物提供令人驚異的優點。固化的水性SiO2組成物之pH可藉由使用所得之自由流動SiO2組成物使之液化而測定。此處可使用習用測量法,例如適於測量H+離子濃度者。 A cured aqueous SiO 2 composition which has a pH greater than zero, preferably greater than 0.5, more preferably greater than 1.0, provides surprising advantages. The pH of the cured aqueous SiO 2 composition can be determined by liquefying it using the resulting free flowing SiO 2 composition. Conventional measurements can be used here, such as those suitable for measuring H + ion concentrations.

可藉本發明方法製得且特別是自組型SiO2組成物形式之經純化之二氧化矽在較佳態樣中,可具極高純度。 Can be prepared by the method of the present invention and in particular from the group of SiO 2 type of purified forms of silicon dioxide in the preferred composition aspect, with extremely high purity can.

較佳的純二氧化矽之特色是藉IPC-MS且以熟習此技術者已知之試樣製備測得下列的含量:a. 鋁含量小於或等於1000ppm,較佳係介於100ppm及0.0001ppm之間,更佳係介於10ppm及0.0001ppm之間; b. 硼含量小於10ppm至0.0001ppm;c. 鈣含量小於8ppm,較佳係介於2ppm及0.0001ppm之間;d. 鐵含量小於或等於50ppm,較佳係介於10ppm及0.0001ppm之間;e. 鎳含量小於或等於10ppm,較佳係介於5ppm及0.0001ppm之間;f. 磷含量小於10ppm至0.0001ppm;g. 鈦含量小於或等於10ppm,較佳係小於或等於1ppm至0.0001ppm;h. 鋅含量小於或等於8ppm,較佳係小於或等於1ppm至0.0001ppm;i. 錫含量小於或等於20ppm,較佳係小於或等於3ppm至0.0001ppm.較佳的高純度二氧化矽之特色為前述雜質(a-i)之總和小於1000ppm,較佳係小於100ppm,更佳係小於10ppm,再更佳係小於5ppm,特佳係介於0.5及3ppm之間且極特佳係介於1及3ppm之間,且偵測極限區中之純度可為各元素之目標,尤其是金屬元素。ppm之數值係以重量計。 The preferred pure cerium oxide is characterized by IPC-MS and the following contents are determined by sample preparation known to those skilled in the art: a. The aluminum content is less than or equal to 1000 ppm, preferably between 100 ppm and 0.0001 ppm. , better system is between 10ppm and 0.0001ppm; b. boron content is less than 10ppm to 0.0001ppm; c. calcium content is less than 8ppm, preferably between 2ppm and 0.0001ppm; d. iron content is less than or equal to 50ppm, preferably between 10ppm and 0.0001ppm; e. The nickel content is less than or equal to 10 ppm, preferably between 5 ppm and 0.0001 ppm; f. the phosphorus content is less than 10 ppm to 0.0001 ppm; g. the titanium content is less than or equal to 10 ppm, preferably less than or equal to 1 ppm to 0.0001 ppm. ; h. The zinc content is less than or equal to 8 ppm, preferably less than or equal to 1 ppm to 0.0001 ppm; i. The tin content is less than or equal to 20 ppm, preferably less than or equal to 3 ppm to 0.0001 ppm. Preferred high purity cerium oxide It is characterized in that the sum of the aforementioned impurities (ai) is less than 1000 ppm, preferably less than 100 ppm, more preferably less than 10 ppm, still more preferably less than 5 ppm, particularly preferably between 0.5 and 3 ppm and extremely excellent between 1 and Between 3 ppm, and the purity in the detection limit zone can be the target of each element, especially the metal element. The value of ppm is by weight.

雜質之決定係藉ICP-MS/OES(感應耦合光譜-質譜/光學電子光譜)及AAS(原子吸收光譜)執行。 The determination of impurities was performed by ICP-MS/OES (inductively coupled spectroscopy-mass spectrometry/optical electron spectroscopy) and AAS (atomic absorption spectroscopy).

為製得可與碳化合物接觸以自彼處得到金屬矽之SiO2模塑物,可例如鑄造尺寸適用於光電弧爐中的片粒形狀。 此等片粒較佳係不具有任何轉彎及邊緣,以使侵蝕減至最少。適當之片粒可(尤其是)具有圓角之圓柱形,更佳係直徑為25至80mm,再更佳係35至60mm,長度對直徑(L/D)比較佳係0.01至100,尤其是0.1至2,更佳係0.5至1.2。此外,較佳的片粒可為具有圓形邊緣之截頭圓錐,或半球之形式。SiO2模塑物之尺寸較佳係在0.001至100 000cm3之範圍中,尤其是0.01至10 000cm3,更佳係0.1至1000cm3,特佳係1至100cm3,尤其是對500kW爐而言。尺寸直接視製程制度而定。模具可根據製程及技術態樣加以調整,例如在碎石或礫石形式下,當經管線供料時,較佳者係沉砂型煤。在直接添加時,礫石可能較有利。 To produce a SiO 2 molding which can be contacted with a carbon compound to obtain a metal ruthenium from one another, for example, a pellet shape suitable for use in a photo-arc furnace can be cast. These granules preferably do not have any turns and edges to minimize erosion. Suitable pellets may (especially) have a rounded cylindrical shape, preferably have a diameter of 25 to 80 mm, more preferably 35 to 60 mm, and a length to diameter (L/D) of preferably 0.01 to 100, especially 0.1 to 2, more preferably 0.5 to 1.2. Further, preferred pellets may be in the form of a truncated cone having a rounded edge, or a hemisphere. The size of the SiO 2 molding is preferably in the range of 0.001 to 100 000 cm 3 , especially 0.01 to 10 000 cm 3 , more preferably 0.1 to 1000 cm 3 , particularly preferably 1 to 100 cm 3 , especially for a 500 kW furnace. Words. The size is directly dependent on the process system. The mold can be adjusted according to the process and technical aspects, for example, in the form of gravel or gravel, when it is fed through the pipeline, it is preferably a grit-type coal. Gravel may be advantageous when added directly.

對於用以製造模塑物之鑄造模具並未有任何特別之要求,唯其使用應不會使任何雜質進入SiO2模塑物內。例如,適當之鑄造模具可自耐高溫純聚合物(聚矽氧,PTFE、POM、PEEK)陶瓷(SiC,Si3N4)、任何形式的石墨、具適當之高純度覆層的金屬及/或石英玻璃製得。特佳具體實施例中,使模具分段,使得脫模特別容易。 There is no particular requirement for the casting mold used to make the molding, but it should be used so that no impurities enter the SiO 2 molding. For example, an appropriate temperature of the casting mold may be from a pure metal polymer (poly-silicon oxide, PTFE, POM, PEEK) ceramic (SiC, Si 3 N 4) , any form of graphite having high purity suitable coating and / Or made of quartz glass. In a particularly preferred embodiment, the mold is segmented to make demolding particularly easy.

較佳具體實施例中,大型模具此時可轉而由各式各樣的材料製得,例如由耐高溫純聚合物(聚矽氧,PTFE,POM,PEEK)構成的織物狀編織物或篩網、陶瓷(SiC,Si3N4)、碳纖維、所有形式的石墨、具適當之高純度塗層之金屬纖維及/或石英玻璃及/或與玻璃纖維及/或碳纖維的組合。另外特佳具體實施例中,模具分段,使得特別容 易藉拆解而脫模。彈性耐熱性材料(例如依類似尼龍襪之方式)在此特別可接受連續製程。 In a preferred embodiment, the large mold can be made from a variety of materials at this time, such as a fabric-like braid or sieve composed of a high temperature resistant pure polymer (polyoxymethylene, PTFE, POM, PEEK). Mesh, ceramic (SiC, Si 3 N 4 ), carbon fiber, all forms of graphite, metal fibers with appropriate high purity coatings and/or quartz glass and/or combinations with glass fibers and/or carbon fibers. In a particularly preferred embodiment, the mold segments are particularly easy to demold by disassembly. Elastomeric heat resistant materials (for example in the manner of nylon socks) are particularly acceptable for continuous processes.

水蒸汽及/或液水通過編織物之高滲透性相當程度的改善模塑物之乾燥特徵。模具之織物特徵出乎意料地亦造成一些性質,例如,若為管狀模具,則在乾燥操作期間可能有鑄造模塑物之無應力收縮,使得特別容易在無裂紋下脫模。 The high permeability of the water vapor and/or liquid water through the braid substantially improves the drying characteristics of the moulding. The fabric characteristics of the mold unexpectedly also impart some properties. For example, in the case of a tubular mold, there may be a stress-free shrinkage of the cast molding during the drying operation, making it particularly easy to demold without cracks.

在模塑之後,藉鹼性添加劑及/或藉乾燥將固化的水性SiO2組成物安定化。為達此目的,已充填之鑄造模具在無添加劑添加或添加添加劑之後,可輸送至乾燥器內,使用例如電、熱風、蒸汽、IR射線、微波或此等加熱方法之組合來加熱。此時可使用習用裝置,例如帶式乾燥器、分階乾燥器、轉鼓乾燥器,連續的或分批的進行乾燥。 After molding, the cured aqueous SiO 2 composition is stabilized by an alkaline additive and/or by drying. To this end, the filled casting mold can be transferred to the dryer without additives or additives, and heated using a combination of, for example, electricity, hot air, steam, IR rays, microwaves or the like. In this case, conventional devices such as belt dryers, step dryers, drum dryers, and continuous or batch drying can be used.

較有利情況是SiO2模塑物可乾燥至使得可自鑄造模具非破壞性的脫模之水含量。是故,於鑄造模具中乾燥時,可執行至水含量降至低於60重量%,尤其是低於50重量%,更佳係低於40重量%。 Advantageously, the SiO 2 molding can be dried to a water content that allows for non-destructive demolding of the mold from the casting mold. Therefore, when dried in a casting mold, it can be carried out until the water content falls below 60% by weight, especially below 50% by weight, more preferably below 40% by weight.

乾燥至低於所述值之水含量的操作較佳係在SiO2模塑物脫模之後,該情況下可使用前文詳述之乾燥器。 The operation of drying to a water content lower than the stated value is preferably after the SiO 2 molding is demolded, in which case the dryer as described above may be used.

令人驚異之優點特別是乾燥後,SiO2模塑物具有在0.0001至50重量%範圍內之水含量,較佳係0.0005至50重量%,尤其是0.001至10重量%,更佳係0.005至5重量%,藉由一般熟習此技術者已知的熱重法(IR濕度測量 儀)。 An amazing advantage, in particular after drying, the SiO 2 moulding has a water content in the range from 0.0001 to 50% by weight, preferably from 0.0005 to 50% by weight, in particular from 0.001 to 10% by weight, more preferably from 0.005 to 5% by weight, by thermogravimetric method (IR moisture meter) known to those skilled in the art.

在標準條件(即標準壓力)下,該固化的水性SiO2組成物可較佳的在50℃至350℃範圍中的溫度下乾燥,較佳係80至300℃,尤其是90至250℃,更佳係100至200℃。 The cured aqueous SiO 2 composition may preferably be dried at a temperature in the range of from 50 ° C to 350 ° C under standard conditions (ie, standard pressure), preferably from 80 to 300 ° C, especially from 90 to 250 ° C. More preferably, it is 100 to 200 °C.

進行乾燥之壓力可在寬幅範圍內,故該乾燥可於減壓下或高壓下執行。因經濟因素,較佳可為在環境壓力或標準壓力(950至1050mbar)乾燥。 The pressure for drying can be in a wide range, so the drying can be carried out under reduced pressure or under high pressure. Due to economic factors, it is preferred to dry at ambient pressure or standard pressure (950 to 1050 mbar).

為增加經乾燥的SiO2模塑物之硬度,可熱固結或燒結。此可例如於習用工業用爐(例如豎爐或微波燒結爐)中分批執行,或連續的在例如推式爐或豎爐中進行。 To increase the hardness of the dried SiO 2 molding, it can be thermally consolidated or sintered. This can be carried out, for example, in batches in a conventional industrial furnace (for example, a shaft furnace or a microwave sintering furnace), or continuously in, for example, a push furnace or a shaft furnace.

燒結的熱固結係於400至1700℃範圍內之溫度下進行,尤其是500至1500℃,較佳係600至1200℃,更佳係700至1100℃。 The sintered thermal consolidation is carried out at a temperature in the range of from 400 to 1700 ° C, especially from 500 to 1500 ° C, preferably from 600 to 1200 ° C, more preferably from 700 to 1100 ° C.

熱固結或燒結之歷經時間係視溫度、SiO2模塑物之所需密度及(若適當)所需硬度而定。熱固結或燒結可較佳地執行5小時,較佳係2小時,更佳係1小時。 The duration of thermal consolidation or sintering depends on the temperature, the desired density of the SiO 2 molding, and, if appropriate, the desired hardness. Thermal consolidation or sintering can preferably be carried out for 5 hours, preferably 2 hours, more preferably 1 hour.

具有前述一般尺寸的經乾燥及/或經燒結的SiO2模塑物可具有例如至少10N/cm2之壓縮強度(以斷裂力表示),較佳係高於20N/cm2,且尤其是經燒結SiO2模塑物可展現至少50或甚至至少150N/cm2的壓縮強度,在每個情況下使用針對壓縮強度試驗的配置之壓力試驗法而測量。 The dried and/or sintered SiO 2 molding having the above general dimensions may have a compressive strength (in terms of breaking force) of, for example, at least 10 N/cm 2 , preferably more than 20 N/cm 2 , and especially The sintered SiO 2 molding may exhibit a compressive strength of at least 50 or even at least 150 N/cm 2 , measured in each case using a pressure test of the configuration for the compressive strength test.

SiO2模塑物之密度可配合終端用途。通常,SiO2模塑 物可具有在0.6至2.5g/cm3之範圍內的密度。若為高溫燒結,甚至可達到2.65g/cm3之密度(石英玻璃密度)。 在用以製備金屬矽的SiO2模塑物之情況,於一可能具體實施例中,為了確保稍後導入之碳源(例如二氧化矽)的良好且均勻接觸,目的係較佳為本體內部表面積高的非晶型結構。本發明之此態樣中,較佳SiO2模塑物係具有在0.7至2.65g/cm3範圍內的密度,尤其是0.8至2.0g/cm3,較佳係0.9至1.9g/cm3,更佳係1.0至1.8g/cm3。如所說明,密度係基於該模塑物的密度,因此測試亦包含模塑物之孔隙容積。 The density of the SiO 2 molding can be used in conjunction with the end use. Generally, the SiO 2 molding may have a density in the range of 0.6 to 2.5 g/cm 3 . If it is sintered at a high temperature, a density of 2.65 g/cm 3 (quartz glass density) can be achieved. In the case of a SiO 2 molding used to prepare metal ruthenium, in a possible embodiment, in order to ensure good and uniform contact of a carbon source (e.g., cerium oxide) introduced later, the purpose is preferably in vivo. An amorphous structure with a high surface area. In this aspect of the invention, it is preferred that the SiO 2 molding has a density in the range of 0.7 to 2.65 g/cm 3 , especially 0.8 to 2.0 g/cm 3 , preferably 0.9 to 1.9 g/cm 3 . More preferably, it is 1.0 to 1.8 g/cm 3 . As indicated, the density is based on the density of the molding, so the test also includes the pore volume of the molding.

此外,用以製備金屬矽的較佳SiO2模塑物在壓縮前之比表面積可在20至1000m2/g範圍內。在熱壓縮後,比表面積較佳在50至800m2/g範圍中,更佳係於100至500m2/g範圍中,且特佳是在120至350m2/g範圍中,以上係藉BET方法測量。SiO2模塑物之氮比表面積(以下稱為BET表面積)係根據ISO 9277以多點表面積決定。 所使用之測量儀器為Micromeritics之TriStar 3000表面積測量儀。BET表面積一般係於液態氮飽和蒸汽壓的分壓範圍0.05-0.20內決定。試樣係藉由例如在Micromeritics的VacPrep 061脫氣器中於低壓下在160℃加熱試樣歷經一小時而製備。 Further, a preferred SiO 2 molding for preparing a metal ruthenium may have a specific surface area before compression of from 20 to 1000 m 2 /g. After the thermal compression, preferably the specific surface area of 50 to 800m 2 / g range, more preferably in line 100 to 500m 2 / g range, and particularly preferred is 120 to 350m 2 / g range, the above system by BET Method measurement. The nitrogen specific surface area (hereinafter referred to as BET surface area) of the SiO 2 molding is determined by the multi-point surface area according to ISO 9277. The measuring instrument used was Micromeritics' TriStar 3000 surface area measuring instrument. The BET surface area is generally determined within the partial pressure range of the liquid nitrogen saturated vapor pressure of 0.05-0.20. The sample was prepared by heating the sample at 160 ° C for one hour at a low pressure, for example, in a Vacerp 061 degasser from Micromeritics.

另一具體實施例中,SiO2模塑物可較佳的具有較高密度,較佳係至少2.2g/cm3之密度,更佳係至少2.4g/cm3。此具體實施例可用於例如製造坩堝,其中金屬矽 係藉定向固化而加以純化。 In another embodiment, SiO 2 moldings having a higher density may be preferred, preferably based at least 2.2g / cm 3 of density, more preferably based at least 2.4g / cm 3. This embodiment can be used, for example, to produce crucibles in which the metal rhodium is purified by directed solidification.

乾燥的模塑物(例如片粒)之密度及比表面積可經由(尤其是)SiO2鑄造材料之剪切輸入量、pH、溫度及/或水含量來加以控制。在對等水含量下,可例如隨著剪切輸入量之增加而增加片粒密度。此外,密度可經由SiO2組成物之pH及固體含量加以調整,固體含量的降低係與密度之降低有關。對模塑物之密度或孔隙度之更明顯的影響可在後續燒結步驟中達成。關於此點,最高燒結溫度特別具重要性,於此溫度下之保持時間亦然。隨著燒結溫度及/或保持時間之升高,模塑物可能達到較高的密度。 The density and specific surface area of the dried moldings (e.g., pellets) can be controlled via, inter alia, the shear input, pH, temperature and/or water content of the SiO 2 casting material. At a peer water content, the pellet density can be increased, for example, as the shear input increases. Further, the density can be adjusted by the pH and solid content of the SiO 2 composition, and the decrease in the solid content is related to the decrease in density. A more pronounced effect on the density or porosity of the molding can be achieved in a subsequent sintering step. In this regard, the highest sintering temperature is of particular importance, as is the hold time at this temperature. As the sintering temperature and/or holding time increases, the molding may reach a higher density.

根據最終用途,該SiO2模塑物可進一步加工。較佳具體實施例中,燒結後之SiO2模塑物可與碳化合物接觸。為達此目的,所使用之純碳來源可為一或多種純碳來源,任意的為混合物,天然來源之有機化合物、醣、石墨(活性碳)、焦炭、木炭、煙灰、碳黑、熱黑、熱解醣,尤其是熱解糖。碳源,尤其是片粒型,可例如藉熱鹽酸溶液處理而純化。此外,可在本發明方法中添加活化劑。活化劑可符合反應起始劑、反應加速劑或碳源之目的。活化劑為純碳化矽、滲有矽之碳化矽及具有碳及/或氧化矽基質之純碳化矽,例如包含碳纖維之碳化矽。 The SiO 2 moulding can be further processed depending on the end use. In a preferred embodiment, the sintered SiO 2 molding can be contacted with a carbon compound. For this purpose, the pure carbon source used may be one or more pure carbon sources, any mixture, natural organic compounds, sugar, graphite (activated carbon), coke, charcoal, soot, carbon black, hot black. , hot solubilized sugar, especially fumed sugar. The carbon source, especially the tablet type, can be purified, for example, by treatment with a hot hydrochloric acid solution. Additionally, an activator can be added to the process of the invention. The activator can be used for the purpose of a reaction initiator, a reaction accelerator or a carbon source. The activator is pure tantalum carbide, tantalum carbide tantalum and pure tantalum carbide having a carbon and/or tantalum oxide matrix, such as tantalum carbide containing carbon fibers.

就加載量而言,SiO2模塑物可具有所提及之碳化合物,較佳係碳黑(技術級碳黑;工業級碳黑),尤其是熱黑、燈黑或藉碳黑專家已知之Kværner製程處理之碳黑;及/或醣,更佳係一或多種單-或雙醣。此等碳化合物可經 由此等碳化合物之溶液及/或分散液而導入。較佳係多孔性SiO2模塑物(較佳具有前述數值範圍之密度及/或比表面積)可經包含至少一種醣及/或碳黑的水性組成物浸滲。為改善組成物進入多孔體內的吸收性,可預先暴露於減壓下或暴露真空下,以移除存在於孔隙中之氣體。之後,所得SiO2模塑物(俱備有至少一種碳化合物)可調至高於500℃之溫度,以使碳化合物熱解。 In terms of loading, the SiO 2 molding may have the mentioned carbon compound, preferably carbon black (technical grade carbon black; industrial grade carbon black), especially for hot black, lamp black or carbon black experts. It is known that the carbon black treated by the Kværner process; and/or sugar is preferably one or more mono- or disaccharides. These carbon compounds can be introduced via solutions and/or dispersions of such carbon compounds. Preferably, the porous SiO 2 molding (preferably having a density and/or specific surface area of the aforementioned numerical range) may be impregnated with an aqueous composition comprising at least one sugar and/or carbon black. To improve the absorption of the composition into the porous body, it may be pre-exposed to a reduced pressure or exposed to a vacuum to remove the gas present in the pores. Thereafter, the resulting SiO 2 moldings (all with at least one carbon compound) can be adjusted to a temperature higher than 500 ° C to pyrolyze the carbon compound.

本發明另一態樣中,SiO2模塑物可用於製造坩堝,其中金屬矽可藉定向固化而純化。此等坩堝一般具有多層結構,最外層確保機械安定性。此層可例如自石墨形成。另一層提供金屬矽與支撐層之間的化學分隔。此另一層較佳係由二氧化矽形成,其可更佳的俱備有Si3N4層。 In another aspect of the invention, the SiO 2 molding can be used to make tantalum, wherein the metal tantalum can be purified by directional solidification. These crucibles generally have a multi-layer structure, and the outermost layer ensures mechanical stability. This layer can be formed, for example, from graphite. The other layer provides a chemical separation between the metal crucible and the support layer. This further layer is preferably formed from silicon dioxide-based, which may have better ready Si 3 N 4 layer.

前文詳述之可藉本發明方法製得的模塑物具新穎性且同樣可形成本發明的一部分標的。 The moldings which can be made by the method of the invention as detailed above are novel and can also form part of the subject matter of the invention.

前文詳述的SiO2模塑物較佳係使用於製備金屬矽的方法中,可使用於例如製造太陽能電池。 The SiO 2 moldings detailed above are preferably used in the method of preparing metal ruthenium, and can be used, for example, in the manufacture of solar cells.

冶金及太陽能矽之定義係常識。例如,太陽能矽具有大於或等於99.999重量%的矽含量。 The definition of metallurgy and solar energy is common sense. For example, solar enthalpy has a cerium content of greater than or equal to 99.999 weight percent.

用以製備金屬矽之方法的進一步步驟及特徵特別於WO 2010/037694中有詳細說明。此方法中,SiO2在光電弧爐中藉碳還原產生金屬矽。所使用之起始物質一般為SiO2模塑物與碳源之組合。是故,2009年9月28日於歐洲專利局申請之公開案WO 2010/037694(申請案編號PCT/EP2009/062387)為揭示的目的其內容以引用方式納 入本申請案。 Further steps and features of the method for preparing metal ruthenium are described in detail in WO 2010/037694. In this method, SiO 2 is reduced by carbon in a photo-arc furnace to produce a metal ruthenium. The starting materials used are generally a combination of a SiO 2 moulding and a carbon source. </ RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;

10‧‧‧第二洗滌區 10‧‧‧Second wash area

11‧‧‧入口 11‧‧‧ Entrance

12‧‧‧出口 12‧‧‧Export

13‧‧‧出口 13‧‧‧Export

14‧‧‧第三洗滌區 14‧‧‧ third wash area

15‧‧‧入口 15‧‧‧ entrance

16‧‧‧出口 16‧‧‧Export

17‧‧‧出口 17‧‧‧Export

1‧‧‧沉澱區 1‧‧‧Precipitation area

2‧‧‧入口 2‧‧‧ entrance

3‧‧‧進料管 3‧‧‧ Feeding tube

4‧‧‧出口 4‧‧‧Export

5‧‧‧出口 5‧‧‧Export

6‧‧‧第一洗滌區 6‧‧‧First wash area

7‧‧‧入口 7‧‧‧ entrance

8‧‧‧出口 8‧‧‧Export

9‧‧‧出口 9‧‧‧Export

Claims (15)

一種高純度SiO2之製法,其包含以下步驟:a. 自pH小於2之酸化劑製備初始進料;b. 提供矽酸鹽溶液;c. 將來自步驟b之矽酸鹽溶液添加至來自步驟a之初始進料,使得形成之沉澱物懸浮液的pH始終保持在小於2的值;及d. 取出且洗滌所形成之二氧化矽;該方法的特徵為:連續或半連續地自沉澱區取出藉沉澱所製得的二氧化矽,且於與沉澱區分離之洗滌區中加以洗滌。 A process for the preparation of high purity SiO 2 comprising the steps of: a. preparing an initial charge from an acidulant having a pH of less than 2; b. providing a citrate solution; c. adding a citrate solution from step b to the step The initial feed of a is such that the pH of the formed precipitate suspension is maintained at a value less than 2; and d. the formed cerium oxide is removed and washed; the method is characterized by continuous or semi-continuous self-precipitation zone The cerium oxide obtained by the precipitation is taken out and washed in a washing zone separated from the precipitation zone. 如申請專利範圍第1項之方法,其中該洗滌係於高剪切下進行,如此藉沉澱法製得之二氧化矽粒子的平均粒度被減低至少30%。 The method of claim 1, wherein the washing is carried out under high shear, and the average particle size of the cerium oxide particles prepared by the precipitation method is reduced by at least 30%. 如申請專利範圍第1或2項之方法,其中該洗滌區係採用串級形式,如此以提供至少兩個洗滌區,待洗滌之二氧化矽係連續或半連續地通過進入該等洗滌區。 The method of claim 1 or 2, wherein the washing zone is in a cascade form such that at least two washing zones are provided, and the cerium oxide to be washed is passed continuously or semi-continuously into the washing zones. 如申請專利範圍第1或2項之方法,其中一部分洗滌介質至少短時間的具有低於2之pH。 A method of claim 1 or 2 wherein a portion of the wash medium has a pH of less than 2 for at least a short period of time. 如申請專利範圍第1或2項之方法,其中提供至少兩個洗滌區,待洗滌之二氧化矽係連續或半連續地通過進入該等洗滌區,第一洗滌區中所使用之洗滌介質具有較第二洗滌區中使用的洗滌介質低的pH。 The method of claim 1 or 2, wherein at least two washing zones are provided, the cerium oxide to be washed is continuously or semi-continuously passed into the washing zones, and the washing medium used in the first washing zone has A lower pH than the wash medium used in the second wash zone. 如申請專利範圍第5項之方法,其中第二洗滌區 所使用之洗滌介質具有在0.5至4範圍中之pH。 For example, the method of claim 5, wherein the second washing zone The washing medium used has a pH in the range of 0.5 to 4. 如申請專利範圍第1或2項之方法,其中該洗滌區具有最大為2m之高度。 The method of claim 1 or 2, wherein the washing zone has a height of at most 2 m. 如申請專利範圍第1或2項之方法,其中用以洗滌二氧化矽之洗滌介質係以0.001至100m/s之流速通經該二氧化矽。 The method of claim 1 or 2, wherein the washing medium for washing the ceria is passed through the ceria at a flow rate of 0.001 to 100 m/s. 如申請專利範圍第1或2項之方法,其中用以洗滌二氧化矽之洗滌介質的體積流速相對於待洗滌二氧化矽之體積的比值係於1至1000範圍內。 The method of claim 1 or 2, wherein the ratio of the volumetric flow rate of the washing medium used to wash the cerium oxide to the volume of the cerium oxide to be washed is in the range of 1 to 1000. 如申請專利範圍第1或2項之方法,其中經洗滌之水性二氧化矽應保留靜置,以達成水之部分移除。 The method of claim 1 or 2, wherein the washed aqueous cerium oxide is left to stand still to achieve partial removal of water. 一種用以執行如申請專利範圍第1至10項中任一項之方法的工廠,其中該工廠具有至少一個連接至矽酸鹽溶液之儲集容器的沉澱區,使得存在於儲集容器中之矽酸鹽溶液可以自上方引入沉澱區,及至少一個洗滌區,此沉澱區包含內部構件,較佳係至少一個可將固體輸送至沉澱區內的刮刀,此固體可於受控方式下自該區通過進入洗滌區。 A plant for carrying out the method of any one of claims 1 to 10, wherein the plant has at least one precipitation zone connected to a storage vessel of a citrate solution such that it is present in the storage vessel The citrate solution can be introduced into the precipitation zone from above, and at least one washing zone comprising internal components, preferably at least one scraper capable of transporting solids into the precipitation zone, the solids being self-contained in a controlled manner The zone passes through the wash zone. 如申請專利範圍第11項之工廠,其中該工廠包含至少兩個排列成串級形式之洗滌區,此等區彼此連接使得固體可自第一洗滌區輸送至第二洗滌區。 A plant according to claim 11, wherein the plant comprises at least two washing zones arranged in a cascade form, the zones being connected to each other such that solids can be transported from the first washing zone to the second washing zone. 一種可藉由如申請專利範圍第1至10項中任一項之方法製得的二氧化矽。 A cerium oxide obtainable by the method of any one of claims 1 to 10. 如申請專利範圍第13項之二氧化矽,其中該二 氧化矽係具有寬幅粒度分布。 For example, the cerium oxide of claim 13 of the patent scope, wherein the two The lanthanum oxide system has a broad particle size distribution. 如申請專利範圍第13或14項之二氧化矽,其中該二氧化矽係具有雙峰或多峰之粒度分布。 The cerium oxide according to claim 13 or 14, wherein the cerium oxide has a bimodal or multimodal particle size distribution.
TW102104219A 2012-02-21 2013-02-04 Process for preparing high-purity SiO2 TW201343552A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201210202587 DE102012202587A1 (en) 2012-02-21 2012-02-21 Process for producing high-purity SiO 2

Publications (1)

Publication Number Publication Date
TW201343552A true TW201343552A (en) 2013-11-01

Family

ID=47710140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102104219A TW201343552A (en) 2012-02-21 2013-02-04 Process for preparing high-purity SiO2

Country Status (3)

Country Link
DE (2) DE102012202587A1 (en)
TW (1) TW201343552A (en)
WO (1) WO2013124166A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111892059B (en) * 2020-08-19 2023-04-25 昆明理工大学 Preparation method of high-purity quartz sand
CN114735712A (en) * 2022-04-25 2022-07-12 吉林省临江天元催化剂有限公司 Method for purifying diatomite

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282008B (en) * 1964-12-16 1968-11-07 Degussa Process for cleaning precipitated silicas and / or silicates
DE2855251A1 (en) * 1978-12-21 1980-07-03 Mittex Ag METHOD AND DEVICE FOR PRODUCING SILICONE GEL
US5100581A (en) 1990-02-22 1992-03-31 Nissan Chemical Industries Ltd. Method of preparing high-purity aqueous silica sol
CN101426722B (en) 2006-03-15 2013-06-05 反应科学公司 Method for making silicon for solar cells and other applications
TW201029925A (en) * 2008-09-30 2010-08-16 Evonik Degussa Gmbh Method for the production of high purity SiO2 from silicate solutions
WO2010037694A2 (en) 2008-09-30 2010-04-08 Evonik Degussa Gmbh Production of solar-grade silicon from silicon dioxide
EP2481245A1 (en) 2009-09-24 2012-08-01 Nokia Siemens Networks OY Method for dynamically controlling an uplink transmission power of a user equipment
US8609068B2 (en) * 2010-02-24 2013-12-17 J.M. Huber Corporation Continuous silica production process and silica product prepared from same

Also Published As

Publication number Publication date
DE112013001058A5 (en) 2014-12-11
WO2013124166A1 (en) 2013-08-29
DE102012202587A1 (en) 2013-08-22

Similar Documents

Publication Publication Date Title
KR101911566B1 (en) High-purity silicon dioxide granules for quartz glass applications and method for producing said granules
KR102203601B1 (en) Halloysite powder and method for producing haloysite powder
WO2017004776A1 (en) Porous alumina ceramic ware and preparation method thereof
KR20110081168A (en) Production of solar-grade silicon from silicon dioxide
KR102406566B1 (en) Precipitated alumina and method of preparation
KR101668906B1 (en) Synthetic amorphous silica powder and method for producing same
CN101979443A (en) Method for producing modified white carbon black
CN101786633B (en) Production technology of white microbead-shaped white carbon black
JP2012513365A (en) Production method of nearly spherical barium sulfate by sulfuric acid method and its use on copper foil substrate
TW201307627A (en) Method of obtaining high-purity silicon
JPH02275713A (en) Production of spherical silica grain
JP2013542900A (en) Porous inorganic oxide particles, and production and use thereof
TW201343552A (en) Process for preparing high-purity SiO2
JP5115039B2 (en) Low soda fine aluminum hydroxide and method for producing the same
JP5640775B2 (en) Method for producing granular gallium oxide
CN100586862C (en) Method for manufacturing high purity nano-cerium dioxide
JP5640749B2 (en) Gallium oxide and method for producing the same
JP3279128B2 (en) Silicon nitride powder
Albano et al. Processing of concentrated aqueous fluorapatite suspensions by slip casting
KR20140009378A (en) Process for producing sio2 mouldings
CA2159222A1 (en) Doped zinc oxide powder, preparation thereof and ceramic produced therefrom
JP2010155770A (en) Method for producing particulate aluminum hydroxide
TW201016605A (en) Silicon-based green bodies
JP5747648B2 (en) Method for producing high purity silica powder
JPH0383805A (en) Production of spherical hydroxyapatite