TW201339334A - Deposition apparatus and deposition method - Google Patents

Abstract

In vapor deposition in proximity vapor deposition, an object is to achieve desirable vapor deposition by locating a target substrate in proximity to a crucible when initiating vapor deposition, while eliminating the necessity to locating the target substrate in proximity to the crucible before initiating vapor deposition. A deposition apparatus 1 includes a vacuum chamber 4, and a crucible 5 that houses an evaporation source 3 therein and is provided within the vacuum chamber 4 so as to vapor deposit an evaporated material from the evaporation source 3 onto a target substrate 2. The deposition apparatus 1 includes an interval changing device 7 that changes the interval between a target substrate 2 introduced into the vacuum chamber 4 and the crucible 5.

Description

Vapor deposition device and evaporation method Field of invention

The present invention relates to a vapor deposition device and a vapor deposition method for vapor-depositing a vaporized material vaporized by a vapor deposition source to a substrate to be processed.

Background of the invention

In a conventional vapor deposition device, for example, a substrate to be processed is placed in a vacuum chamber, and a vapor deposition source is disposed at a predetermined interval from the substrate to be processed, and a vaporized material vaporized by the vapor deposition source is discharged to The substrate to be processed is thereby formed into a film having a predetermined film thickness (for example, refer to Patent Document 1).

More specifically, the vapor deposition apparatus is a so-called batch method. The vapor deposition apparatus has a crucible containing a vapor deposition source and a heating element for heating the crucible in a vacuum chamber. The vapor deposition device heats the crucible by the heat of the heating element, thereby discharging the vaporized material from the evaporation. The vapor deposition device performs film formation by vapor-depositing the vaporized material to the substrate to be processed.

Further, in the conventional vapor deposition apparatus, in addition to the above-described batch type, the vapor deposition apparatus is continuously vapor-deposited by a so-called roll-to-roll.

On the other hand, in the vapor deposition performed by the vapor deposition device, it is necessary to confirm the state of vapor deposition (so-called film formation rate). Therefore, it is known to provide a sensor in a vacuum chamber for measuring the thickness of a film formed on a substrate to be processed. The sensor For example, QCM (Quartz Crystal Microbalance: quartz crystal microbalance) is used. The QCM can detect a film formation rate based on a frequency change corresponding to a deposition amount of a vaporized material attached to the crystal vibrating body, and the crystal vibration element is disposed at a predetermined position in the vacuum chamber.

However, in the above-described conventional vapor deposition device, the vapor deposition source is separated from the substrate to be processed. However, from the viewpoint of downsizing the device or effectively utilizing the vapor deposition source, it is desirable that the separation interval be as small as possible.

In this regard, research and development in recent years has progressed in the so-called near-vapor deposition technology. This near-vapor deposition system uses, for example, a housing portion that houses a vapor deposition source and a crucible that has a guide passage for guiding a vaporized material from a vapor deposition source to a substrate to be processed. In this near-vapor deposition, a guide passage is formed in the crucible, thereby minimizing the distance between the vapor deposition source and the substrate to be processed.

Advanced technical literature Patent literature

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-163365

Summary of invention

For example, in the case of continuous vapor deposition in the case of continuous vapor deposition of the drum, the following problems are caused. That is, immediately after the start of vapor deposition (after the substrate to be treated is stopped and immediately after the transfer), the film formation rate is extremely lowered. When the film formation rate is extremely low, it is desirable that the film of the thickness becomes impossible to form on the substrate to be treated, and the vaporized material becomes useless.

The reason why the film formation rate is extremely low is presumed as follows. That is, At the stage before the start of vapor deposition (the state in which the substrate to be treated is stopped), when the crucible is close to the substrate to be treated, part of the substrate to be treated is heated by the crucible and the vaporized material discharged from the crucible It becomes a state of overheating. When the substrate to be processed is transported from this state, part of the substrate to be treated which is overheated is moved, and the portion of the substrate to be treated which is not heated becomes close to the crucible. Considering the cooling trap (trap) generated at this time, the film formation rate is low.

Further, when the crucible is close to the substrate to be treated before the vapor deposition starts, the crucible continuously releases the vaporized material, so that the space between the crucible and the substrate to be treated becomes a state higher than the surrounding high pressure. When the substrate to be treated is transported from the high pressure state, a rapid pressure change is caused, which is a cause of a decrease in the film formation rate.

The present invention has been made in view of the above circumstances, and it is an object of the invention to provide a vapor deposition apparatus and a vapor deposition method, which are capable of performing vapor deposition in a near vapor deposition, in which the crucible is not close to the substrate to be processed before vapor deposition, and at the start of vapor deposition The crucible is brought close to the substrate to be treated, thereby performing desired vapor deposition.

The present invention provides a vapor deposition apparatus having a vacuum chamber and a vapor deposition source for vapor deposition of a vaporized material from the vapor deposition source to a substrate to be processed, and is disposed in the vacuum chamber. In the crucible, the vapor deposition device has an interval changing device that changes the interval between the substrate to be processed introduced into the vacuum chamber and the crucible.

Further, in the vapor deposition device of the present invention, the interval changing device may be configured to have a moving mechanism, and the moving mechanism may move the crucible relative to the substrate to be processed.

Further, the vapor deposition device of the present invention may employ the above-described interval changing device The mobile mechanism has a configuration in which the moving mechanism moves the substrate to be processed relative to the crucible.

Further, in the vapor deposition device of the present invention, it is preferable that the crucible system has a storage portion for accommodating the vapor deposition source, and a first guide passage for guiding the vaporized material discharged from the vapor deposition source to the substrate to be processed; The wall portion is configured to divide the first guiding passage; and the second guiding passage is partially penetrated from the first guiding passage and penetrates the wall portion to communicate with the outside, and the vapor deposition device further has A sensor for measuring a thickness of a film formed by adhering the vaporized material from the vapor deposition source to the substrate to be processed is provided corresponding to an exit of the second guiding passage.

Further, the present invention is a vapor deposition method for vapor-depositing a vaporized material from a vapor deposition source to a substrate to be treated by using any of the above vapor deposition devices, characterized by having the following steps: before vapor deposition starts, The interval changing device separates and separates the separation interval between the substrate to be processed and the crucible to a predetermined first separation interval; and when the vapor deposition starts, the interval between the substrate to be processed and the crucible is changed by the interval changing device to The second separation interval is smaller than the first separation interval; while maintaining the second separation interval, the vaporized material from the vapor deposition source is vapor-deposited to the substrate to be treated while conveying the substrate to be processed.

1‧‧‧Vapor deposition unit

2‧‧‧Processed substrate

3‧‧‧vaporation source

4‧‧‧vacuum room

5‧‧‧坩锅

6‧‧‧ sensor

6a‧‧‧Detection surface

7‧‧‧Interval change device

11‧‧‧ Housing Department

12‧‧‧1st guiding path

13‧‧‧Export

14‧‧‧2nd guiding path

16‧‧‧ bottom wall

17‧‧‧ Sidewall

21‧‧‧1st wall

22‧‧‧2nd wall

23‧‧‧3rd wall

32‧‧‧ Entrance

33‧‧‧Export

35‧‧‧Support members

35a‧‧‧1st support member

35b‧‧‧2nd support member

36‧‧‧Mobile agencies

37‧‧‧Support table

38‧‧‧1st link

39‧‧‧2nd link

41‧‧‧ screw components

42‧‧‧Drive motor

43‧‧‧Tieparts

46‧‧‧ Body Department

47‧‧‧ drive shaft

49‧‧‧1st support

50‧‧‧2nd support

51‧‧‧ Roller

51a‧‧‧1st roller

51b‧‧‧2nd roller

53‧‧‧Guide

D1‧‧‧1st separation interval

D2‧‧‧2nd separation interval

Fig. 1 is a partial cross-sectional view showing an evaporation apparatus according to an embodiment of the present invention.

Fig. 2 is a perspective view showing an example of a gap changing device in the vapor deposition device.

3] FIG. 3 is a view showing another embodiment of the vapor deposition device of the present invention; A perspective view of the interval changing device.

Detailed description of the preferred embodiment Used to implement the type of invention

Hereinafter, the form for carrying out the present invention will be described with reference to Figs. 1 and 2 . The vapor deposition device 1 of the present embodiment is used to manufacture an organic EL element or other element by so-called proximity vapor deposition. This vapor deposition device 1 is a person who can perform continuous vapor deposition of a drum. In the vapor deposition device 1, the substrate 2 to be processed in a film form and in a strip shape is conveyed in a predetermined direction, and the vaporized material from the vapor deposition source 3 is vapor-deposited to the substrate 2 to be processed. Thereby, a film of a predetermined thickness is formed.

More specifically, the vapor deposition apparatus 1 includes a vacuum chamber 4, a vacuum pump (not shown) connected to the vacuum chamber 4, a delivery roller (not shown) for feeding the substrate 2 to be processed to the vacuum chamber 4, and steaming. The plating source 3, the crucible 5 housed in the vacuum chamber 4, the sensor 6 disposed adjacent to the crucible 5 and measuring the thickness of the film formed on the substrate 2 to be processed, and the heater for heating the crucible 5 ( (not shown), an interval changing device 7 that changes the distance between the substrate 2 to be treated and the crucible 5, and a winding roller (not shown) in which the substrate 2 to be processed which has been vapor-deposited in the vacuum chamber 4 is wound.

As shown in FIG. 1, the crucible 5 has a housing portion 11 for accommodating the vapor deposition source 3, and a first guiding passage 12 for guiding the vaporized material discharged from the vapor deposition source 3 to the substrate 2 to be processed. 1 one end portion of the guide passage 12, and the discharge port 13 that is discharged to the substrate to be processed 2 by the vaporized material of the first guide passage 12 is partially communicated from the first guide passage 12 to the crucible 5th outside the 5th Guide path 14.

The accommodating portion 11 is to house the vapor deposition source 3, and has a bottom wall portion 16 and a side wall portion 17 that is perpendicular to the bottom wall portion 16. The accommodating portion 11 is surrounded by the wall portions 16, 17 to form a accommodating space for the vaporized material. The accommodating portion 11 is configured to be heated by a heater from the outside thereof to transmit the heat to the vapor deposition source 3.

The first guide passage 12 is formed by a wall portion that is provided to cover the accommodating portion 11. The wall portion has a first wall portion 12 formed integrally with and continuously connected to one of the side wall portions 17 of the accommodating portion 11, a second wall portion 22 that extends substantially perpendicularly to the first wall portion, and The third wall portion 22 is substantially perpendicular to the third wall portion 23 that is substantially parallel to the first wall portion 21 . The first wall portion 21 and the third wall portion 23 are connected by the fourth wall portion 24 (see FIG. 2) and the fifth wall portion 25 (see FIG. 3) having the same configuration. The first guide passage 12 is formed as a space defined by the first wall portion 21 to the fifth wall portion 25 and covered.

In the above-described configuration, the first guide passage 12 guides the vaporized material discharged from the vapor deposition source 3 to the upper side through the first wall portion 21, and is guided to the lateral direction through the second wall portion 22. Further, the first guide passage 12 guides the vaporized material to the lower side through the third wall portion 23, and discharges the vaporized material to the substrate to be treated 2 through the discharge port 13. The vaporized material discharged from the discharge port 13 is attached to the substrate 2 to be treated, and a film formed thereby is formed on the surface thereof.

The second guide passage 14 is provided in the middle of the second wall portion 22 . More specifically, the second guide passage 14 is constituted by a hole (orifice) that penetrates the second wall portion 22 and communicates with the outside. In the second guide passage 14, the opening of the hole on the back side of the second wall portion 22 serves as the inlet 32 of the vaporized material. On the second wall The opening of the hole on the outer side of the portion 22 serves as an outlet 33 for the vaporized material. The diameter or width of the aperture is constant from the inlet 32 to the outlet 33. Further, the diameter or width of the hole is smaller than the size of the first guiding passage 12.

In the present embodiment, a crystal vibrating body (QCM) is used for the sensor 6. The sensor 6 is disposed in the vacuum chamber 4 at a position close to the crucible 5. More specifically, the sensor 6 is disposed above the second guide path 14 formed in the second wall portion 22 of the crucible 5 . Further, the sensor 6 is disposed such that the detection surface 6a faces the outlet 33 of the second guide passage 14. In this manner, the sensor is disposed adjacent to the second guiding path 14, whereby the vaporized material discharged from the second guiding path 14 to the outside of the crucible 5 is attached to the sensor 6, and can be detected for being processed. The film formation rate of the substrate 2.

The interval changing device 7 moves the crucible 5 relative to the substrate 2 to be processed, thereby changing the interval between the crucible 5 and the substrate 2 to be treated. As shown in FIG. 2, the interval changing device 7 includes a support member 35 that supports the crucible 5, a moving mechanism 36 that is coupled to the support member 35, moves the crucible 5 through the support member 35, and a support table 37 that supports the moving mechanism. .

The support member 35 has a first support member 35a coupled to the crucible 5, and a second support member 35b provided between the first support member 35a and the moving mechanism 36.

A long-length bar having a predetermined length is used as the first support member 35a. The first support member 35a has one end connected to the crucible 5 and the other end connected to the second support member 35b. The first support member 35a has a screw portion (not shown) at both end portions.

Use a plate member having a predetermined area and thickness as the second branch Support member 35b. The second support member 35b has a connection hole (hereinafter referred to as a "first connection hole") 38 for connecting the movement mechanism 36 to the second support member 35b, and a connection hole for connecting the first support member 35a (hereinafter It is called "second connecting hole" 39. A sensor 6 is fixed to one side (inside) of the second support member 35b.

The first connection hole 38 and the second connection hole 39 are formed to penetrate the thickness direction of the first support member 35a. The first connection hole 38 and the second connection hole are formed as screw holes.

The second connection hole 39 is formed at a predetermined position of the second support member 35b at a predetermined interval from the first connection hole 38. The second connection hole 39 is screwed to a screw portion formed at an end portion of the first support member 35a.

The moving mechanism 36 has a screw member 41 coupled to the second support member 35b and a drive motor 42 that rotationally drives the screw member 41.

The screw member 41 is screwed into the second connection hole 39 of the second support member 35b. Further, the screw member 41 has a stopper portion 43 at one end portion. The other end of the screw member 41 is coupled to the drive motor 42.

The drive motor 42 has a body portion 46 and a drive shaft 47 that protrudes from the body portion 46. The body portion 46 is supported by the support table 37. The drive shaft 47 is coupled to the end of the screw member 41 through the coupling member 48.

The support base 37 has a first support portion 49 that is fixed in the vacuum chamber 4 and a second support portion 50 that supports the drive motor 42. The first support portion 49 is formed in a long shape. The first support portion 49 is disposed in the vertical direction, and the lower end portion thereof is fixed in the vacuum chamber 4.

The second support portion 50 is formed in a plate shape and is provided on the first support portion 49. Ends. The second support portion 50 is provided to protrude in the horizontal direction from the upper end portion of the first support portion 49. The second support portion 50 forms an insertion hole (not shown) through which the drive shaft 47 of the drive motor 42 is inserted. The second support portion 50 supports the drive motor 42 by inserting the drive shaft 47 of the drive motor 42 into the insertion hole and placing the drive motor 42 thereon.

Hereinafter, a vapor deposition method in which the substrate 2 to be processed is vapor-deposited to a vaporized material using the vapor deposition device 1 will be described.

At the stage before the start of vapor deposition, the crucible 5 is placed at the standby position shown by the solid line in FIG. Hereinafter, the interval between the crucible 5 and the substrate 2 to be treated at this standby position is referred to as a "first separation interval" (indicated by reference numeral D1 in Fig. 1). This first separation interval is maintained before vapor deposition starts. In this state, the conveyance of the substrate to be processed is stopped.

At the start of vapor deposition, the crucible 5 is moved downward by driving the drive motor 42 of the moving mechanism 36 in the interval changing device 7. Thereby, the crucible 5 is disposed at a position close to the substrate 2 to be treated (the position indicated by a chain of two dots in FIG. 1). The interval between the crucible 5 and the substrate 2 to be treated at this standby position is referred to as a "second separation interval" (indicated by reference numeral D2 in Fig. 1). This second separation interval D2 is of course smaller than the first separation interval D1.

Next, the substrate 2 to be processed is sent out from the delivery roller, and wound by a winding roller to be conveyed to a predetermined conveyance direction. Thereafter, the second separation interval D2 is maintained during the period from the end of vapor deposition. Thereby, the vaporized material is discharged from the discharge port of the first guide passage 12 of the crucible 5, and is sequentially vapor-deposited on the substrate 2 to be processed which is transported.

When the vapor deposition is completed, the delivery roller and the winding roller are stopped, and When the substrate 2 to be processed which has been transported is stopped, the crucible 5 is moved upward by the interval changing device 7, and the first separation interval D1 is again secured. By the above steps, the vapor deposition of the vaporized material for the substrate 2 to be processed is ended.

In the vapor deposition device 1 and the vapor deposition method of the present embodiment described above, the interval changing device 7 can move the crucible 5 relative to the substrate 2 to be processed by the moving mechanism 36, whereby the crucible 5 can be changed. Since it is spaced apart from the substrate 2 to be treated, it is possible to ensure that the interval between the crucible 5 and the substrate 2 to be treated (the first separation interval D1) is sufficiently large before the vapor deposition starts, and the crucible is made at the time of vapor deposition. 5 The distance from the substrate 2 to be treated (the second separation interval D2) is small and close, whereby vapor deposition can be performed at a desired film formation rate.

Fig. 3 is a view showing another embodiment of the vapor deposition device 1 of the present invention, in particular, the interval change 7. The interval changing device 7 illustrated in Fig. 2 described above changes the interval between the crucibles 5 by moving the crucible 5 relative to the substrate to be processed 2, and the interval changing device 7 of this example makes the substrate 2 to be treated relative to the crucible The pot 5 is moved to change the interval.

The interval changing device 7 shown in Fig. 3 has a roller 51 that supports the substrate 2 to be processed, and a moving mechanism 36 that moves the substrate 2 to be processed relative to the crucible 5 by moving one of the rollers 51.

The roller 51 has a plurality of (two in the illustrated example) first rollers 51a and a plurality of (two in the illustrated example) second rollers 51b fixed to a predetermined position in the vacuum chamber 4. The first roller 51a contacts the surface of the substrate 2 to be processed. Further, the second roller 51b contacts the inside of the substrate 2 to be treated.

The moving mechanism 36 is an elevating mechanism that raises and lowers the first roller 51a. The moving mechanism 36 has a guide for moving the shaft portion of the first roller 51a in the vertical direction. Guide groove 53.

When the vapor deposition is performed by the interval changing device 7 of the present embodiment, the first roller 51a is moved downward by the interval changing device 7 before the vapor deposition starts. Thereby, the portion of the substrate 2 to be treated that has come into contact with the first roller 51a is pressed by the first roller 51a. That is, a part of the substrate 2 to be treated is placed at a standby position that is largely away from the crucible 5. The interval between the crucible 5 in this state and the portion of the substrate 2 to be treated is the "first separation interval" (D1) in the present embodiment.

At the start of vapor deposition, the moving mechanism 36 of the interval changing device 7 is driven and the first roller 51a is moved upward along the guide groove 53. At this time, the substrate 2 to be treated to which the predetermined tension is applied moves upward while being in contact with the first roller 51a as the first roller 51a moves upward. Thereby, the substrate 2 to be processed is placed at an approximate position where vapor deposition can be performed with respect to the crucible 5. The interval between the substrate 2 to be treated and the crucible 5 at this time is the "first separation interval" (D1) in the present embodiment.

When the substrate 2 to be treated is located close to the crucible 5, the first roller 51a is positioned above the substrate 2 to be treated and at a position distant from the substrate 2 to be treated.

Then, while maintaining the second separation interval D2, the vaporized material discharged from the crucible 5 is vapor-deposited on the substrate 2 to be treated while the substrate 2 to be processed is conveyed in a predetermined conveyance direction.

In the vapor deposition device 1 and the vapor deposition method of the present embodiment described above, the interval changing device 7 moves the substrate 2 to be processed relative to the crucible 5 by the moving mechanism 36, whereby the crucible 5 can be changed. The interval between the substrates 2 to be treated, so that the gap between the crucible 5 and the substrate to be treated 2 can be ensured before the vapor deposition starts. (The first separation interval D1) is sufficiently large, and at the time of vapor deposition, the interval between the crucible 5 and the substrate 2 to be treated (the second separation interval D2) is made small, and the vapor deposition rate can be performed at a desired film formation rate. plating.

Further, the vapor deposition device and the vapor deposition method of the present invention are not limited to the configuration of the above embodiment. Further, the vapor deposition device and the vapor deposition method of the present invention are not limited to the above-described effects. The vapor deposition device and the vapor deposition method of the present invention can be variously modified without departing from the gist of the present invention.

For example, in the above-described embodiment, the crucible 5 or the substrate 2 to be processed is moved by the interval changing device 7, whereby the interval between the crucible 5 and the substrate to be processed 2 is changed as an example, but is not limited thereto. this. For example, the interval changing device 7 illustrated in FIG. 2 may be used in combination with the interval changing device 7 illustrated in FIG. 3 to change the interval between the crucible 5 and the substrate 2 to be processed.

In the above embodiment, the crucible 5 and the substrate 2 to be processed are moved in the vertical direction to change the interval therebetween, but the present invention is not limited thereto. For example, the crucible 5 and the substrate 2 to be treated may be moved in the lateral direction (horizontal direction), thereby changing the interval between the two.

1‧‧‧Vapor deposition unit

2‧‧‧Processed substrate

3‧‧‧vaporation source

4‧‧‧vacuum room

5‧‧‧坩锅

6‧‧‧ sensor

6a‧‧‧Detection surface

11‧‧‧ Housing Department

12‧‧‧1st guiding path

13‧‧‧Export

14‧‧‧2nd guiding path

16‧‧‧ bottom wall

17‧‧‧ Sidewall

21‧‧‧1st wall

22‧‧‧2nd wall

23‧‧‧3rd wall

32‧‧‧ Entrance

33‧‧‧Export

D1‧‧‧1st separation interval

D2‧‧‧2nd separation interval

Claims (5)

A vapor deposition apparatus comprising: a vacuum chamber; and a crucible for accommodating a vapor deposition source for vapor-depositing a vaporized material from the vapor deposition source to a substrate to be treated and installed in a vacuum chamber, wherein the steaming is The plating apparatus has an interval changing device that changes the interval between the substrate to be processed introduced into the vacuum chamber and the crucible. The vapor deposition device according to claim 1, wherein the interval changing device has a moving mechanism for moving the crucible relative to the substrate to be processed. The vapor deposition device of claim 1, wherein the interval changing device has a moving mechanism for moving the substrate to be processed relative to the crucible. The vapor deposition device according to any one of claims 1 to 3, wherein the crucible has a housing portion for housing the vapor deposition source, and a first guiding passage for discharging gas from the vapor deposition source. The material is guided to the substrate to be processed; the wall portion is for dividing the first guiding passage; and the second guiding passage is partially penetrated from the first guiding passage and penetrates the wall portion to communicate with the outside And the vapor deposition device further has a second guiding path corresponding to the second guiding path A sensor for measuring the thickness of the film formed by the vaporization material from the vapor deposition source attached to the substrate to be treated is provided. An evaporation method for vapor-depositing a vaporized material from a vapor deposition source to a substrate to be treated, using the vapor deposition apparatus according to any one of claims 1 to 3, characterized by the following steps: evaporation Before the start, the separation interval between the substrate to be processed and the crucible is separated by a predetermined interval changing device to a predetermined first separation interval and maintained; when the vapor deposition starts, the substrate to be treated is treated by the interval changing device. The interval between the pans is changed to a second separation interval smaller than the first separation interval, and the vaporization material from the vapor deposition source is vapor-deposited to the substrate to be treated while maintaining the second separation interval while conveying the substrate to be processed.